Electronic devices and methods of making the same
By introducing a low-dielectric-constant polymethyl methacrylate dielectric layer between single-crystal metal nanoparticle electrodes, the problem that high-dielectric-constant oxides cannot prevent the migration of metal atoms and ions is solved, thus achieving stability and current control of electronic devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- DALIAN UNIV OF TECH
- Filing Date
- 2021-01-13
- Publication Date
- 2026-05-12
AI Technical Summary
In the prior art, high dielectric constant oxide materials cannot effectively prevent the migration of metal atoms and ions between polycrystalline metal electrodes, resulting in changes in current intensity and affecting the stability and performance of electronic devices.
Single-crystal metal nanoparticles are used as electrodes, and a low-dielectric-constant polymethyl methacrylate polymer dielectric layer is introduced between them to form an end-to-end nanorod system, which avoids changes in electrode morphology and reduces tunneling current and atomic migration current.
It improves the working stability of small-pitch metal electrodes, reduces the tunneling current and atomic migration current between electrodes, and maintains the stability and current control of electronic devices under high voltage.
Smart Images
Figure CN112951902B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to an electronic device and a method for fabricating the same. Background Technology
[0002] To reduce thermally induced / field-induced tunneling current and improve electrical performance between small-pitch polycrystalline metal electrodes, oxides with high dielectric constants (ε>10), such as hafnium oxide and yttrium oxide, are typically introduced between the polycrystalline metal electrodes. The introduction of these high-dielectric-constant oxides can completely block current between small-pitch (e.g., around 5 nanometers) polycrystalline metal electrodes. For example, in high-performance transistors with a source-drain electrode spacing of 10 nanometers, hafnium oxide is used as the dielectric layer.
[0003] However, while oxides of high dielectric constant materials can significantly reduce tunneling current, they cannot prevent the electromigration of metal atoms and ions. Therefore, in electronic devices based on high dielectric constant oxides, changes in current intensity due to the migration of metal atoms and ions can be widely observed.
[0004] Compared to polycrystalline metal electrodes, single-crystal metal electrodes possess a higher degree of crystallinity, atomically flat interfaces, and specific crystal orientations. Therefore, single-crystal metal electrodes exhibit different electrode stability and interfacial electronic, atomic, and ion transport characteristics compared to polycrystalline metal materials. Consequently, even when the same dielectric material used in polycrystalline metal electrodes is introduced between single-crystal metal electrodes, the changes in inter-electrode transport properties can be entirely different. Exploring dielectric materials specifically designed for small-sized single-crystal metal electrodes plays a crucial foundational role in advancing the application of single-crystal metal electrode materials. Summary of the Invention
[0005] To address one of the aforementioned technical problems, this disclosure provides an electronic device and a method for its fabrication.
[0006] According to one aspect of this disclosure, an electronic device includes:
[0007] The first electrode is composed of single-crystal metal nanoparticles;
[0008] The second electrode is composed of single-crystal metal nanoparticles. The first and second electrodes are arranged in one direction, with one end of the first electrode facing one end of the second electrode, and the two ends forming a small gap.
[0009] A dielectric layer formed of a low dielectric constant material, and the dielectric layer is disposed at least in the spacing.
[0010] An electronic device according to at least one embodiment of the present disclosure further includes a substrate on which the first electrode and the second electrode are disposed.
[0011] According to at least one embodiment of the electronic device disclosed herein, the electronic device further includes a first power supply terminal and a second power supply terminal, the first power supply terminal being disposed at the other end of the first electrode and the second power supply terminal being disposed at the other end of the second electrode, and voltages being applied to the first electrode and the second electrode respectively through the first power supply terminal and the second power supply terminal.
[0012] According to at least one embodiment of the electronic device of the present disclosure, the dielectric layer is configured to prevent changes in the morphology of the first and second electrodes when a high voltage is applied to the first and second electrodes.
[0013] According to at least one embodiment of the electronic device of the present disclosure, the low dielectric constant material is a polymethyl methacrylate polymer.
[0014] According to at least one embodiment of the electronic device of the present disclosure, the spacing is 3 to 5 nanometers.
[0015] According to at least one embodiment of the electronic device of the present disclosure, the first electrode and the second electrode are single-crystal gold nanorods.
[0016] According to at least one embodiment of the electronic device of the present disclosure, the first electrode is a positive electrode and the second electrode is a negative electrode.
[0017] According to at least one embodiment of the electronic device of the present disclosure, the dielectric layer is configured such that the current between the first electrode and the second electrode is less than the tunneling current and the atomic migration current.
[0018] According to another aspect of this disclosure, a method for fabricating an electronic device as described above is characterized by comprising:
[0019] A first electrode and a second electrode are deposited on the surface of a substrate;
[0020] A low-dielectric-constant material is deposited at least in the gap formed between one end of the first electrode and one end of the second electrode to form the dielectric layer; and
[0021] A first power supply terminal and a second power supply terminal are respectively machined at the other end of the first electrode and the other end of the second electrode. Attached Figure Description
[0022] The accompanying drawings illustrate exemplary embodiments of the present disclosure and, together with the description thereof, serve to explain the principles of the present disclosure. These drawings are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this specification.
[0023] Figure 1 A schematic diagram of an electronic device according to one embodiment of the present disclosure is shown.
[0024] Figure 2 A graph showing the relationship between applied voltage and current in the case of a dielectric layer without using a low dielectric constant material according to one embodiment of the present disclosure is illustrated.
[0025] Figure 3 A graph showing the relationship between applied voltage and current in the case of a dielectric layer using a low dielectric constant material according to one embodiment of the present disclosure is shown.
[0026] Figure 4 The diagram shows the morphological changes of gold nanorods after applying a high voltage, in the case of (a) a dielectric layer with a low dielectric constant material and in the case of (b) a dielectric layer without a low dielectric constant material.
[0027] Figure 5 A method for fabricating an electronic device according to an embodiment of the present disclosure is shown.
[0028] Figure 6 A method for testing an electronic device according to an embodiment of the present disclosure is shown. Detailed Implementation
[0029] The present disclosure will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of the disclosure. Furthermore, it should be noted that, for ease of description, only the parts relevant to the present disclosure are shown in the accompanying drawings.
[0030] It should be noted that, where there is no conflict, the embodiments and features described in this disclosure can be combined with each other. The technical solutions of this disclosure will now be described in detail with reference to the accompanying drawings and embodiments.
[0031] Unless otherwise stated, the exemplary implementations / embodiments shown are to be understood as providing exemplary features of various details that provide ways in which the technical concepts of this disclosure can be implemented in practice. Therefore, unless otherwise stated, the features of various implementations / embodiments may be additionally combined, separated, interchanged and / or rearranged without departing from the technical concepts of this disclosure.
[0032] The use of crosshairs and / or shading in the accompanying drawings is generally used to clarify the boundaries between adjacent components. Thus, unless otherwise stated, the presence or absence of crosshairs or shading does not convey or indicate any preference or requirement for the specific material, material properties, dimensions, proportions, commonalities between the illustrated components, or any other characteristics, properties, etc., of the components. Furthermore, in the accompanying drawings, the dimensions and relative dimensions of components may be exaggerated for clarity and / or descriptive purposes. When exemplary embodiments can be implemented differently, a specific process sequence may be performed in a different order than that described. For example, two consecutively described processes may be performed substantially simultaneously or in the reverse order of their description. Furthermore, the same reference numerals denote the same components.
[0033] When a component is referred to as being "on" or "above" another component, "connected to," or "joined to" another component, the component may be directly on, directly connected to, or directly joined to the other component, or there may be intermediate components. However, when a component is referred to as being "directly on" another component, "directly connected to," or "directly joined to" another component, there are no intermediate components. Therefore, the term "connection" can refer to a physical connection, an electrical connection, etc., and may or may not have intermediate components.
[0034] For descriptive purposes, this disclosure may use spatial relative terms such as “below,” “under,” “below,” “down,” “above,” “above,” “higher,” and “side (e.g., in a “sidewall”)” to describe the relationship between one component and another component as shown in the accompanying drawings. In addition to the orientations depicted in the drawings, the spatial relative terms are also intended to encompass different orientations of the device during use, operation, and / or manufacture. For example, if the device in the drawings is flipped, a component described as “below” or “under” another component or feature would subsequently be positioned “above” said other component or feature. Thus, the exemplary term “below” can encompass both “above” and “below” orientations. Furthermore, the device may be otherwise positioned (e.g., rotated 90 degrees or in other orientations), thus interpreting the spatial relative descriptive terms used herein accordingly.
[0035] The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms “a” and “the” are intended to include the plural forms as well. Furthermore, when the terms “comprising” and / or “including” and variations thereof are used in this specification, it indicates the presence of the stated features, integrals, steps, operations, parts, components, and / or groups thereof, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, parts, components, and / or groups thereof. It should also be noted that, as used herein, the terms “substantially,” “about,” and other similar terms are used as approximate terms rather than as terms of degree, thus explaining the inherent biases in measurements, calculated values, and / or provided values that would be recognized by one of ordinary skill in the art.
[0036] According to one embodiment of this disclosure, an electronic device is provided. Figure 1 A schematic diagram of an electronic device 10 according to one embodiment of the present disclosure is shown.
[0037] like Figure 1 As shown, the electronic device 10 may include a first electrode 100, a second electrode 200, and a dielectric layer 300.
[0038] The first electrode 100 can be formed from single-crystal metal nanoparticles. The second electrode 200 can be formed from single-crystal metal nanoparticles. The first and second electrodes formed from single-crystal metal nanoparticles in this disclosure have a high degree of crystallization, atomically flat interfaces, and specific crystal orientations. The first and second electrodes can be gold nanorods.
[0039] The first and second electrodes used in this application can be elongated electrodes with a certain width or diameter and a certain length. The cross-section of the electrode is not limited to a circle; it can also be square, elliptical, etc.
[0040] The first electrode 100 and the second electrode 200 are arranged in one direction, for example, they can be arranged as follows: Figure 1 Extending in the X direction as shown. One end of the first electrode 100 is positioned facing one end of the second electrode 200, for example, as... Figure 1 As shown, the right end of the first electrode 100 is positioned opposite the left end of the second electrode 200, meaning that the end face of the right end can face the end face of the left end.
[0041] A small gap is formed between one end of the first electrode 100 and one end of the second electrode 200. This gap can be 2–10 nanometers or 3–5 nanometers.
[0042] The dielectric layer 200 can be formed of a low dielectric constant material, such as a low dielectric constant polymer material, or optionally a low dielectric constant polymethyl methacrylate (PMMA) polymer material.
[0043] Taking polymethyl methacrylate (PMMA) polymer material with a low dielectric constant as an example, when forming the dielectric layer 200, the dielectric layer 200 can be deposited in specific areas on the surfaces of the first electrode 100 and the second electrode 200. Specifically, the PMMA polymer material can be spin-coated onto the surfaces of the first electrode 100 and the second electrode 200. The spin-coating thickness of this material can be hundreds of nanometers, and the dielectric constant of the PMMA polymer material can be approximately 2.2 to 2.5.
[0044] The deposited dielectric layer must at least fill the gap formed between one end of the first electrode 100 and one end of the second electrode 200. Additionally, the deposited dielectric layer may also cover the vicinity of one end of the first electrode 100 and one end of the second electrode 200, such as... Figure 1 As shown, the dielectric layer 300 covers a portion of the ends of the first electrode 100 and the second electrode 200.
[0045] According to further embodiments of this disclosure, the electronic device of this application may further include a substrate 400. The substrate 400 may be a silicon substrate. A first electrode 100 and a second electrode 200 are disposed on the substrate. For example, the first electrode 100 and the second electrode 200 may be single-crystal gold nanorods, which are deposited on the surface of the substrate, such that the gold nanorods deposited on the substrate surface are positioned to form an end-to-end aligned nanorod system.
[0046] Those skilled in the art will understand that although a silicon substrate has been used as an example above, other types of substrates, such as glass substrates, flexible substrates, etc., can also be used.
[0047] According to a further embodiment of the present disclosure, the electronic device 10 further includes a first power supply terminal 500 and a second power supply terminal 600. The first power supply terminal 500 is disposed at the other end of the first electrode 100, and the second power supply terminal 600 is disposed at the other end of the second electrode 200. Voltages are applied to the first electrode 100 and the second electrode 200 through the first power supply terminal 500 and the second power supply terminal 600, respectively.
[0048] The dielectric layer 300 is configured to prevent changes in the morphology of the first electrode 100 and the second electrode 200 when a high voltage is applied. Furthermore, the dielectric layer 200 is configured such that the current between the first electrode 100 and the second electrode 200 is less than the tunneling current and the atomic migration current.
[0049] In existing electronic devices, the electrode morphology undergoes destructive deformation such as fusion when high voltage is applied. However, the technical solution disclosed herein can avoid this destructive deformation, thereby improving the working stability of small-pitch metal electrodes and reducing the tunneling current and / or migration current between electrodes.
[0050] In this disclosure, single-crystal metal nanorods arranged end-to-end are used as the first and second electrodes, with the first electrode serving as the positive electrode and the second electrode as the negative electrode. The spacing between the positive and negative electrodes is approximately 3–5 nanometers. A 100-nanometer-long PMMA polymer layer is spin-coated onto the surface of the single-crystal gold nanorods as a dielectric layer, wherein the dielectric constant of this dielectric layer is approximately 2.2–2.5. Experiments show that dielectric layers made of low-dielectric-constant materials such as PMMA (polymethyl methacrylate) polymer dielectric layers can significantly stabilize the single-crystal gold nanorod electrodes.
[0051] By applying different voltages to the first and second power supply terminals, the current intensity of the nanorod electrode under different voltages is obtained accordingly.
[0052] For ease of comparison, Figure 2 The diagram illustrates the relationship between applied voltage and current when a dielectric layer without a low dielectric constant material is not used. From... Figure 2 As can be seen, the current-voltage curves exhibit clear resistive switching characteristics. For example, under a high voltage of 0.7V, the current intensity of the electrode can reach 10. -5 On the order of amperes.
[0053] Figure 3 This illustrates the relationship between applied voltage and current when a dielectric layer made of a low-dielectric-constant material is used. For example... Figure 3 As shown, after introducing a dielectric layer with a low dielectric constant material, the current intensity of the electrode will be significantly reduced (e.g., reduced below the instrument sensitivity). It can also be seen that electronic devices with a dielectric layer with a low dielectric constant material can remain stable under different voltages.
[0054] like Figure 3 As shown, since the current value of the electrode is much lower than the tunneling current and the atomic migration current, both thermally induced / field-induced tunneling and the migration of metal atoms and ions are effectively suppressed. This fully demonstrates the regulation of the transport properties of gold nanorods by the dielectric layer of the low dielectric constant material.
[0055] Figure 4 The diagram shows the morphological changes of gold nanorods after applying a high voltage, in the case of (a) a dielectric layer with a low dielectric constant material and in the case of (b) a dielectric layer without a low dielectric constant material.
[0056] exist Figure 4 In a, the morphology of the gold nanorods remains unchanged, while in Figure 4 In b, the morphology of the gold nanorods changed. According to... Figure 4 This demonstrates the protective effect of the polymer layer on materials with low dielectric constants. When no PMMA layer is introduced between the nanorods, a clear change in the morphology of the gold rods can be observed before and after applying a high voltage.
[0057] According to another embodiment of this disclosure, a method for fabricating an electronic device is also provided.
[0058] Figure 5 A method for fabricating an electronic device according to an embodiment of the present disclosure is shown.
[0059] The method for fabricating this electronic device may include the following steps.
[0060] Step 1002: Deposit the first electrode and the second electrode on the surface of the substrate.
[0061] The first and second electrodes can be composed of single-crystal metal nanoparticles. The first and second electrodes formed from single-crystal metal nanoparticles in this disclosure possess a high degree of crystallinity, atomically flat interfaces, and specific crystal orientations. The first and second electrodes can be gold nanorods.
[0062] The first and second electrodes used in this application can be elongated electrodes with a certain width or diameter and a certain length. The cross-section of the electrode is not limited to a circle; it can also be square, elliptical, etc.
[0063] The first and second electrodes are arranged in one direction, for example, as shown in... Figure 1 Extending in the X direction as shown. One end of the first electrode and one end of the second electrode are positioned facing each other, for example, the right end of the first electrode and the left end of the second electrode are positioned facing each other, that is, the end face of the right end can face the end face of the left end. A small gap is formed between one end of the first electrode and one end of the second electrode. This gap can be 2 to 10 nanometers or 3 to 5 nanometers.
[0064] The substrate can be a silicon substrate. A first electrode and a second electrode are disposed on the substrate. For example, the first electrode and the second electrode can be single-crystal gold nanorods, which are deposited on the surface of the substrate, and the gold nanorods deposited on the substrate surface are positioned to form an end-to-end aligned nanorod system.
[0065] Step 1004: Deposit a low dielectric constant material in at least the gap formed between one end of the first electrode and one end of the second electrode to form a dielectric layer. The deposition can be achieved by electron beam lithography.
[0066] The dielectric layer can be formed of a low dielectric constant material, such as a low dielectric constant polymer material, or optionally a low dielectric constant polymethyl methacrylate (PMMA) polymer material.
[0067] Taking polymethyl methacrylate (PMMA) polymer material with a low dielectric constant as an example, when forming the dielectric layer, the dielectric layer can be deposited in specific areas on the surfaces of the first and second electrodes. Specifically, PMMA polymer material can be spin-coated onto the surfaces of the first and second electrodes. The spin-coating thickness of this material can be hundreds of nanometers, and the dielectric constant of the PMMA polymer material can be approximately 2.2 to 2.5.
[0068] The deposited dielectric layer must at least fill the gap between one end of the first electrode and one end of the second electrode. Additionally, the deposited dielectric layer may also cover the vicinity of one end of the first electrode and one end of the second electrode, such as... Figure 1 As shown, the dielectric layer covers a portion of the ends of the first and second electrodes.
[0069] Step 1006: Process the first power supply terminal and the second power supply terminal at the other end of the first electrode and the other end of the second electrode, respectively. This processing can be performed using electron beam lithography.
[0070] The substrate can be a silicon substrate. A first electrode and a second electrode are disposed on the substrate. For example, the first electrode and the second electrode can be single-crystal gold nanorods, which are deposited on the surface of the substrate, and the gold nanorods deposited on the substrate surface are positioned to form an end-to-end aligned nanorod system.
[0071] Although, Figure 5 Steps 1004 and 1006 are shown in sequence, but it should be noted that step 1006 can also be performed before step 1004.
[0072] According to another embodiment of this disclosure, a method for testing electronic devices is also provided.
[0073] Figure 6 A method for testing an electronic device according to an embodiment of the present disclosure is shown.
[0074] The testing method for this electronic device may include the following steps.
[0075] Step 2002: Deposit the first electrode and the second electrode on the surface of the substrate.
[0076] The first and second electrodes can be composed of single-crystal metal nanoparticles. The first and second electrodes formed from single-crystal metal nanoparticles in this disclosure possess a high degree of crystallinity, atomically flat interfaces, and specific crystal orientations. The first and second electrodes can be gold nanorods.
[0077] The first and second electrodes used in this application can be elongated electrodes with a certain width or diameter and a certain length. The cross-section of the electrode is not limited to a circle; it can also be square, elliptical, etc.
[0078] The first and second electrodes are arranged in one direction, for example, as shown in... Figure 1 Extending in the X direction as shown. One end of the first electrode and one end of the second electrode are positioned opposite each other, for example, the right end of the first electrode and the left end of the second electrode are positioned opposite each other, that is, the end face of the right end can face the end face of the left end.
[0079] A small gap is formed between one end of the first electrode and one end of the second electrode. This gap can be 2–10 nanometers or 3–5 nanometers.
[0080] The substrate can be a silicon substrate. A first electrode and a second electrode are disposed on the substrate. For example, the first electrode and the second electrode can be single-crystal gold nanorods, which are deposited on the surface of the substrate, and the gold nanorods deposited on the substrate surface are positioned to form an end-to-end aligned nanorod system.
[0081] Step 2004: Deposit a low dielectric constant material in at least the gap formed between one end of the first electrode and one end of the second electrode to form a dielectric layer. The deposition can be achieved by electron beam lithography.
[0082] The dielectric layer can be formed of a low dielectric constant material, such as a low dielectric constant polymer material, or optionally a low dielectric constant polymethyl methacrylate (PMMA) polymer material.
[0083] Taking polymethyl methacrylate (PMMA) polymer material with a low dielectric constant as an example, when forming the dielectric layer, the dielectric layer can be deposited in specific areas on the surfaces of the first and second electrodes. Specifically, PMMA polymer material can be spin-coated onto the surfaces of the first and second electrodes. The spin-coating thickness of this material can be hundreds of nanometers, and the dielectric constant of the PMMA polymer material can be approximately 2.2 to 2.5.
[0084] The deposited dielectric layer must at least fill the gap between one end of the first electrode and one end of the second electrode. Additionally, the deposited dielectric layer may also cover the vicinity of one end of the first electrode and one end of the second electrode, such as... Figure 1As shown, the dielectric layer covers a portion of the ends of the first and second electrodes.
[0085] Step 2006: Process the first power supply terminal and the second power supply terminal at the other end of the first electrode and the other end of the second electrode, respectively.
[0086] The substrate can be a silicon substrate. A first electrode and a second electrode are disposed on the substrate. For example, the first electrode and the second electrode can be single-crystal gold nanorods, which are deposited on the surface of the substrate, and the gold nanorods deposited on the substrate surface are positioned to form an end-to-end aligned nanorod system.
[0087] Although, Figure 6 Steps 1004 and 1006 are shown in sequence, but it should be noted that step 1006 can also be performed before step 1004.
[0088] Step 2008: Apply different voltages to the first power supply terminal and the second power supply terminal, and measure the current intensity flowing through the nanorod electrode.
[0089] In the technical solution disclosed herein, a single-crystal metal nanoparticle electrode is protected by coating it with a polymer material with a low dielectric constant. Even when operating under high voltage conditions, the electrode morphology does not undergo destructive deformation such as fusion, thereby improving the working stability of the small-pitch metal electrode and reducing the tunneling and migration currents between the electrodes.
[0090] This disclosure presents a novel electrical control method for small-pitch electrodes. Unlike the blocking effect of traditional high-dielectric-constant oxide dielectric layers, a low-dielectric-constant polymer dielectric layer is used as the control method. Furthermore, the morphology protection effect of polymer dielectric layers, represented by PMMA, on single-crystal metal nanoparticles is also demonstrated. In addition, in the single-crystal metal nanoparticle electrode system, the effective inhibition of common electron, atomic, and ion transport processes by the polymer layer was discovered.
[0091] In summary, based on this disclosure, the following technical solutions are provided.
[0092] 1. An electronic device, comprising:
[0093] The first electrode is composed of single-crystal metal nanoparticles;
[0094] The second electrode is composed of single-crystal metal nanoparticles. The first and second electrodes are arranged in one direction, with one end of the first electrode facing one end of the second electrode, and the two ends forming a small gap.
[0095] A dielectric layer formed of a low dielectric constant material, and the dielectric layer is disposed at least in the spacing.
[0096] 2. The electronic device as described in Scheme 1, the electronic device further comprising a substrate, wherein the first electrode and the second electrode are disposed on the substrate.
[0097] 3. The electronic device as described in Scheme 2, the electronic device further includes a first power supply terminal and a second power supply terminal, the first power supply terminal is disposed at the other end of the first electrode, the second power supply terminal is disposed at the other end of the second electrode, and voltages are applied to the first electrode and the second electrode through the first power supply terminal and the second power supply terminal respectively.
[0098] 4. The electronic device as described in Scheme 3, wherein the dielectric layer is configured to prevent changes in the morphology of the first electrode and the second electrode when a high voltage is applied to them.
[0099] 5. The electronic device as described in Scheme 1, wherein the low dielectric constant material is a polymethyl methacrylate polymer material.
[0100] 6. The electronic device as described in Scheme 1, wherein the spacing is 3 to 5 nanometers.
[0101] 7. The electronic device according to any one of Schemes 1 to 6, wherein the first electrode and the second electrode are single-crystal gold nanorods.
[0102] 8. The electronic device according to any one of claims 1 to 7, wherein the first electrode is a positive electrode and the second electrode is a negative electrode.
[0103] 9. The electronic device according to any one of claims 1 to 8, wherein the dielectric layer is configured such that the current between the first electrode and the second electrode is less than the tunneling current and the atomic migration current.
[0104] 10. A method for fabricating an electronic device as described in any one of claims 1 to 9, comprising:
[0105] A first electrode and a second electrode are deposited on the surface of a substrate;
[0106] A low-dielectric-constant material is deposited at least in the gap formed between one end of the first electrode and one end of the second electrode to form the dielectric layer; and
[0107] A first power supply terminal and a second power supply terminal are respectively machined at the other end of the first electrode and the other end of the second electrode.
[0108] In the description of this specification, the references to terms such as "one embodiment / mode," "some embodiments / modes," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment / mode or example is included in at least one embodiment / mode or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment / mode or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments / modes or examples. Furthermore, without contradiction, those skilled in the art can combine and integrate the different embodiments / modes or examples described in this specification, as well as the features of different embodiments / modes or examples.
[0109] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0110] Those skilled in the art should understand that the above embodiments are merely for illustrating the present disclosure and are not intended to limit the scope of the disclosure. Those skilled in the art can make other changes or modifications based on the above disclosure, and these changes or modifications still fall within the scope of the present disclosure.
Claims
1. An electronic device, characterized in that, include: The first electrode is composed of single-crystal metal nanoparticles; The second electrode is composed of single-crystal metal nanoparticles. The first electrode and the second electrode are arranged in one direction, and one end of the first electrode and one end of the second electrode face each other. The one end of the first electrode and the one end of the second electrode form a small gap of 3 nanometers to 5 nanometers. A dielectric layer, formed of a low dielectric constant polymer material having a dielectric constant of 2.2 to 2.5, and the dielectric layer being disposed at least in the spacing; the dielectric layer covering a portion of one end of the first electrode and a portion of one end of the second electrode; The dielectric layer is configured to prevent changes in the morphology of the first and second electrodes when a high voltage is applied to them. The dielectric layer is configured such that the current between the first electrode and the second electrode is less than the tunneling current and the atomic migration current.
2. The electronic device as described in claim 1, characterized in that, The electronic device also includes a substrate, on which the first electrode and the second electrode are disposed.
3. The electronic device as described in claim 2, characterized in that, The electronic device further includes a first power supply terminal and a second power supply terminal. The first power supply terminal is disposed at the other end of the first electrode, and the second power supply terminal is disposed at the other end of the second electrode. Voltages are applied to the first electrode and the second electrode through the first power supply terminal and the second power supply terminal, respectively.
4. The electronic device as described in claim 1, characterized in that, The low dielectric constant polymer material is polymethyl methacrylate polymer material.
5. The electronic device as described in any one of claims 1 to 4, characterized in that, The first electrode and the second electrode are single-crystal gold nanorods.
6. The electronic device as described in any one of claims 1 to 4, characterized in that, The first electrode is a positive electrode, and the second electrode is a negative electrode.
7. A method for preparing an electronic device as described in any one of claims 1 to 6, characterized in that, include: A first electrode and a second electrode are deposited on the surface of a substrate; A low-dielectric-constant polymeric material is deposited in at least the gap formed between one end of the first electrode and one end of the second electrode to form the dielectric layer; as well as A first power supply terminal and a second power supply terminal are respectively machined at the other end of the first electrode and the other end of the second electrode.