Display panel and display device using the same

By preparing the external charge of the semiconductor layer grounded in the substrate of the flexible display device, the reliability problem of the flexible display device in high temperature and high humidity environments is solved, and the effect of improving the reliability of the device is achieved.

CN113130755BActive Publication Date: 2025-02-21LG DISPLAY CO LTD
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Patent Information

Application Number
CN202011463336.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-12-31
Filing Date
2020-12-11
Publication Date
2025-02-21
Estimated Expiration
2040-12-11

AI Technical Summary

Technical Problem

The flexible display device is susceptible to high temperature and high humidity environments, resulting in a decrease in the reliability of the substrate.

Method used

By preparing a semiconductor layer in the substrate, charges from the outside are grounded, thereby protecting the panel array on the substrate and improving the reliability of the device.

Benefits of technology

Effectively reduce the electrical impact on the flexible display device substrate, improve the reliability of the components, and remove conductive ions without using a separate mask, thereby improving the productivity of the display device.

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Abstract

A display panel and a display device using the display panel are disclosed. The display panel includes a semiconductor layer located in a substrate, and charges entering from the outside are grounded through the semiconductor layer, thereby protecting a panel array arranged on the substrate and improving the reliability of the display device.
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Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2019-0180189, filed on Dec. 31, 2019, which is hereby incorporated by reference as if fully set forth herein. Technical Field

[0002] The present invention relates to a display device, and more particularly to a display panel and a display device using the display panel, which improves the reliability of the device by applying a protective structure to a substrate. Background Art

[0003] Recently, as society has entered the information age, the field of displays for visually displaying electrical information signals has developed rapidly, and in order to meet this development, various flat panel display devices with excellent performance such as slimness, light weight and low power consumption have been developed, and these flat panel display devices have rapidly replaced traditional cathode ray tubes (CRTs).

[0004] As examples of such display devices, there are liquid crystal display (LCD) devices, plasma display panel (PDP) devices, field emission display (FED) devices, organic light emitting diode (OLED) display devices, quantum dot display devices, etc. Among them, self-luminous display devices such as organic light emitting diode (OLED) display devices or quantum dot display devices are considered to be competitive applications, which do not require a separate light source and achieve compact and clear color display.

[0005] Furthermore, demands for freely deformable flexible display devices are now increasing, and research on the flexible display devices is being conducted.

[0006] However, the flexible display device must have a sufficiently thin substrate to achieve flexibility of the device, and thus the flexible display device is susceptible to high temperature and high humidity environments. Summary of the invention

[0007] Accordingly, the present invention is directed to a display panel and a display device using the same that substantially overcome one or more problems due to limitations and disadvantages of the related art.

[0008] An object of the present invention is to provide a display panel and a display device using the same, which improves the reliability of the device by applying a protection structure to a substrate.

[0009] That is, the display panel and the display device using the same according to the present invention ground charges from the outside by preparing a semiconductor layer within a substrate to protect a panel array on a substrate.

[0010] Other advantages, purposes and features of the present invention will be described in part in the following description, and in part will become apparent to those skilled in the art after studying the following or may be learned from the practice of the present invention. The purposes and other advantages of the present invention may be realized and obtained through the structures particularly pointed out in the written description and claims and the drawings.

[0011] To achieve these objectives and other advantages, and in accordance with the purposes of the present invention, as specifically embodied and broadly described herein, a display panel includes: a substrate including a plurality of polymer layers; an inorganic interlayer insulating film disposed between the polymer layers; a semiconductor layer configured to contact the inorganic interlayer insulating film; and a panel array disposed on the substrate.

[0012] In another aspect of the present invention, a display device includes a substrate, a panel array and a camera, wherein the substrate includes a first polymer layer, a second polymer layer, and a semiconductor layer and an inorganic interlayer insulating film arranged between the first polymer layer and the second polymer layer, the panel array is arranged on the second polymer layer, and the camera is arranged below the substrate.

[0013] It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The accompanying drawings are included herein to provide a further understanding of the present invention and are incorporated in and constitute a part of this application. The accompanying drawings illustrate embodiments of the present invention and together with the description are used to explain the principles of the present invention. In the drawings:

[0015] Figure 1 is a cross-sectional view showing a substrate according to a first embodiment of the present invention;

[0016] Figure 2 is a cross-sectional view showing a display panel according to a first embodiment of the present invention;

[0017] Figure 3 is a cross-sectional view showing a substrate according to a second embodiment of the present invention;

[0018] Figure 4 is a cross-sectional view showing a substrate according to a third embodiment of the present invention;

[0019] Figure 5 is a cross-sectional view showing a substrate according to a fourth embodiment of the present invention;

[0020] Figure 6 is a cross-sectional view showing a substrate according to a fifth embodiment of the present invention;

[0021] Figure 7is a cross-sectional view showing a substrate according to a sixth embodiment of the present invention;

[0022] Figure 8 is a plan view showing a display device according to the present invention;

[0023] Fig. 9 yes Figure 8 Cross-sectional view of part A. DETAILED DESCRIPTION

[0024] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are shown in the accompanying drawings. In the following description of the embodiments and the accompanying drawings, identical or similar elements are represented by the same reference numerals throughout the specification. In the following description of the embodiments of the present invention, when the detailed description of the known functions and configurations contained herein may make the subject matter of the present invention unclear, the detailed description thereof will be omitted. In addition, the names of the elements used in the following description of the embodiments of the present invention are selected in consideration of the convenience of writing the specification, and therefore may be different from the names of the actual product parts.

[0025] The shapes, sizes, ratios, angles and quantities of the elements used to describe the embodiments of the present invention given in the drawings are merely exemplary, and therefore, the present disclosure is not limited to the details shown. In the following description of the embodiments, the terms "include", "comprise" and "have" should be interpreted as indicating the presence of one or more characteristics, quantities, steps, operations, elements or parts or combinations thereof described in the specification, and do not exclude the presence of other characteristics, quantities, steps, operations, elements, parts or combinations thereof, or the possibility of adding them, unless the term "only" is used. It should be understood that, unless otherwise stated, the singular expression of an element includes the plural expression.

[0026] When explaining the elements included in the various embodiments of the present invention, unless otherwise specified, the elements should be interpreted as including a range of error.

[0027] In the following description of embodiments, it will be understood that when expressing a positional relationship, for example, when an element is "on," "above," "below," or "beside" another element, unless the terms "immediately" or "directly" are used, the two elements may be in direct contact with each other, or one or more other elements may be interposed between the two elements.

[0028] In the following description of the embodiments, it will be understood that when expressing temporal relationships, for example, when using terms expressing the order of events, such as "after", "subsequently", "next" and "before", unless the terms "immediately" or "directly" are used, these terms cover both continuous relationships between events and discontinuous relationships between events.

[0029] In the following description of the embodiments, it should be understood that when the terms "first", "second", etc. are used to describe various elements, these terms are only used to distinguish the same or similar elements. Therefore, without departing from the technical scope of the present invention, the first element described below can be referred to as the second element.

[0030] The various features of the various embodiments of the present invention may be partially or completely coupled or combined with each other and interlocked or driven in various technical ways, and the various embodiments may be implemented independently of each other or together through the connection therebetween.

[0031] Figure 1 is a cross-sectional view showing a substrate according to a first embodiment of the present invention.

[0032] like Figure 1 As shown, the substrate 100 according to the first embodiment of the present invention includes a first polymer layer 110 , a second polymer layer 120 , and an inorganic interlayer insulating film 115 and a semiconductor layer 117 disposed between the first polymer layer 110 and the second polymer layer 120 .

[0033] Here, the semiconductor layer 117 serves to ground the hydrogen ions and oxygen ions generated from the first polymer layer 110 and the second polymer layer 120 and then release the grounded hydrogen ions and oxygen ions to the outside.

[0034] In the display device, a substrate including a polymer layer may have a small thickness, but moisture introduced from the outside may be ionized in a high temperature and high humidity environment, thereby affecting a panel array formed on an upper surface of the substrate.

[0035] In the display panel according to the present invention, the substrate 100 includes the plurality of polymer layers 110 and 120 and the semiconductor layer 170 disposed between the plurality of polymer layers, so that conductive ions generated within the substrate 100 can be grounded and then released to the outside.

[0036] The semiconductor layer 117 may be an amorphous silicon layer or a polycrystalline silicon layer, and may include n-type or p-type ion impurities to enhance a grounding function as the case requires.

[0037] For example, in the case of a display panel that is susceptible to cationic impurities such as hydrogen ions, the substrate 100 is neutralized by doping the semiconductor layer 117 disposed in the substrate 100 with an n-type impurity having a high electron mobility, such as PH3, thereby preventing the cationic impurities such as hydrogen ions from affecting the panel array formed on the substrate 100.

[0038] Alternatively, in the case of a display panel that is susceptible to anion impurities such as oxygen ions, the anion impurities in the substrate 100 are grounded by doping the semiconductor layer 117 disposed in the substrate 100 with p-type impurities having a high hole mobility, thereby preventing the anion impurities from affecting the panel array formed on the substrate 100.

[0039] The semiconductor layer 117 may be formed of any material that can be called a semiconductor layer, that is, an oxide semiconductor layer or a metal induced semiconductor layer, in addition to an amorphous silicon layer or a polycrystalline silicon layer. Unlike other insulating layers, that is, the first polymer layer 110 and the second polymer layer 120 and the inorganic interlayer insulating film 115, the semiconductor layer 117 has a specified level of electrical conductivity or higher within the substrate 100, and thus serves as a path for oxygen ions, hydrogen ions, etc. to move and release.

[0040] When the semiconductor layer 117 is provided in the substrate 100, a mask can be omitted compared to the case where a grounding metal pattern is provided on a panel array to collect conductive impurities, and thus, the semiconductor layer 117 can improve yield in addition to removing conductive impurities or conductive ions by utilizing its unique function.

[0041] The first polymer layer 110 and the second polymer layer 120 included in the substrate 100 determine the total thickness of the substrate 100, which is several micrometers to several tens of micrometers, and when a display panel is implemented by forming a panel array on the substrate 100, the display panel may have flexibility. In order to further improve the thinness and flexibility, each of the first polymer layer 110 and the second polymer layer 120 may be formed to have a thickness of 10 μm or less.

[0042] Each of the first polymer layer 110 and the second polymer layer 120 is a transparent polymer layer or a colored polymer layer having a specified transmittance or greater, and may include at least one polymer compound selected from the group consisting of polyester and copolymers including polyester, polyimide and copolymers including polyimide, olefin-based copolymers, polyacrylic acid and copolymers including polyacrylic acid, polystyrene and copolymers including polystyrene, polysulfate and copolymers including polysulfate, polycarbonate and copolymers including polycarbonate, polyamic acid and copolymers including polyamic acid, polyamine and copolymers including polyamine, polyvinyl alcohol and polyallylamine.

[0043] In addition, the inorganic interlayer insulating film 115 is formed of a material having high moisture resistance, and may be, for example, SiO x 、SiO x N y or SiN xConsidering that the first polymer layer 110 and the second polymer layer 120 formed of only organic components have relatively low moisture resistance compared with inorganic materials, an inorganic interlayer insulating film 115 is provided between the first polymer layer 110 and the second polymer layer 120 to improve the moisture resistance of the substrate 100. The inorganic interlayer insulating film 115 may be used as a barrier layer to prevent moisture flowing into the first polymer layer 110 and the second polymer layer 120 from flowing toward the panel array.

[0044] The substrate 100 is not limited to the above two polymer layers 110 and 120, and may include a greater number of polymer layers as required. When the substrate 100 includes three or more polymer layers, the inorganic interlayer insulating film 115 and the semiconductor layer 117 that are in contact with each other may be disposed between the respective polymer layers, or between some polymer layers. When the inorganic interlayer insulating film 115 and the semiconductor layer 117 are disposed between the respective polymer layers, moisture or ionic impurities may be more effectively prevented from being introduced into the panel array.

[0045] In this case, the semiconductor layer 117 may contact the upper surface or the lower surface of the inorganic interlayer insulating film 115 .

[0046] Figure 2 is a cross-sectional view showing a display panel according to a first embodiment of the present invention.

[0047] Figure 2 Shown include Figure 1 An example of a display panel 500 of a substrate 100 is shown, and a buffer stack 200 and an array 4000 are formed on the substrate 100 .

[0048] The buffer stack 200 may include a first inorganic buffer layer 210, a second inorganic buffer layer 211, and an active buffer layer 212. As occasion demands, any one of the first inorganic buffer layer 210, the second inorganic buffer layer 211, and the active buffer layer 212 may be omitted.

[0049] Here, the reason why the first inorganic buffer layer 210 and the second inorganic buffer layer 211 are separately provided is that the inorganic films formed of different materials prevent moisture from penetrating from the outside and reduce the influence of impurities from the outdoor air. The first inorganic buffer layer 210 may be a silicon oxide film, and the second inorganic buffer layer 211 may be a silicon nitride film. As required, the first inorganic buffer layer 210 and the second inorganic buffer layer 211 may be reversed, and the buffer stack 200 may also include a multilayer structure including an inorganic insulating film. The first inorganic buffer layer 210 and the second inorganic buffer layer 211 may prevent impurities from being transferred from the lower substrate 100 to the panel array 4000 located thereon, and prevent moisture from penetrating from the outside.

[0050] The active buffer layer 212 serves to prevent impurities from a lower portion of the substrate 100 from entering the semiconductor layer 220 to be subsequently formed thereon, and to stabilize the semiconductor layer 220 .

[0051] like Figure 2 As shown, the panel array 4000 can be set on the active buffer layer 212, and include, for example, a semiconductor layer 220, a gate insulating film 225, a first wiring layer 230, a first interlayer insulating film 235, a second wiring layer 240, a second interlayer insulating film 243 and a third interlayer insulating film 245 formed in sequence.

[0052] The semiconductor layer 220 and the first and second wiring layers 230 and 240 may form a thin film transistor TFT, which may be connected to an organic light emitting diode OLED formed thereon, and the organic light emitting diode OLED may be protected by an encapsulation layer 900 formed thereon. The organic light emitting diode OLED may include a first electrode 810, at least one light emitting layer 820, and a second electrode 830, and the first electrode 810 may be connected to one electrode of the thin film transistor TFT.

[0053] The illustrated example of the panel array 4000 is shown from the perspective of a thin film transistor array, and the panel array 4000 of the display device may include a light emitting element located on the third interlayer insulating film 245. The light emitting element may include a first electrode and a second electrode facing each other and a light emitting layer disposed between the first electrode and the second electrode. The light emitting layer may include an organic material or an inorganic material.

[0054] In addition, at the location where the light emitting element is formed, an encapsulation layer (not shown) may be formed to fully cover and shield the light emitting element. The area of ​​the encapsulation layer may be the same as or larger than the area of ​​the panel array 4000.

[0055] The panel array 4000 may be disposed in an active area AA including a plurality of pixels on the first surface of the substrate 100 .

[0056] Apart from Figure 1 In addition to the above-described configurations shown, the semiconductor layer 117 of the substrate 100 according to the present invention may have various forms, and the substrate 100 may be implemented according to various embodiments to be described below and included in a display panel or a display device.

[0057] Hereinafter, substrates having various forms according to other embodiments will be described.

[0058] Figure 3 is a cross-sectional view showing a substrate according to a second embodiment of the present invention.

[0059] like Figure 3As shown, the substrate 300 according to the second embodiment of the present invention is configured such that the semiconductor layer 112 is disposed close to the first polymer layer 110 located at a lower portion of the substrate 300 .

[0060] Thus, the substrate 300 according to the second embodiment of the present invention includes the first polymer layer 110 , the semiconductor layer 112 , the inorganic interlayer insulating film 115 , and the second polymer layer 120 which are sequentially stacked.

[0061] The semiconductor layer 112 may have a function of grounding oxygen ions and hydrogen ions in the same manner as in the above-described first embodiment.

[0062] Figure 4 is a cross-sectional view showing a substrate according to a third embodiment of the present invention.

[0063] like Figure 4 As shown, the substrate 3000A according to the third embodiment of the present invention has Figure 3 The substrate 300 shown has the same layered structure, but is provided with a first hole 100 a in a designated area. Here, the first hole 100 a may be formed only through the first polymer layer 110 .

[0064] For example, when the camera is located below the substrate 3000A, the first hole 100a is formed by removing the first polymer layer 110, which is one of the layers of the substrate, so that the amount of light absorbed by the first polymer layer 110 can be offset, thereby improving the recognition ability of the camera.

[0065] For example, by irradiating laser from below, the first polymer layer 110 can be removed to form a specified hole shape. In this case, the laser modifies a portion of the semiconductor layer 313 remaining in the laser irradiation area, so that the semiconductor layer 313 has a different crystallinity from the semiconductor layer 112 around the first hole 100a.

[0066] In this case, the semiconductor layer 313 above the first hole 100a may include polysilicon, and the semiconductor layer 112 around the first hole 100a may include amorphous silicon. This is just an example, and by changing the energy intensity of laser irradiation, the semiconductor layer 313 above the first hole 100a and the semiconductor layer 112 around the first hole 100a may have different grain sizes or different crystallinity.

[0067] The modified semiconductor layer 313 above the first hole 100 a may serve to protect the inorganic interlayer insulating film 115 thereon.

[0068] In this case, the semiconductor layer 313 above the first hole 100 a has transparency, so the recognition capability of the camera is not deteriorated when the camera is located in the first hole 100 a.

[0069] In addition, in the process for forming each layer of the substrate 3000A, the semiconductor layer 313 above the first hole 100a and the semiconductor layer 112 around the first hole 100a are formed by the same process, but as a post-process for forming the first hole 100a, by irradiating laser, different crystallinity is given to the semiconductor layers 313 and 112. Therefore, the semiconductor layers 313 and 112 are formed in the same layer without a step (i.e., a height difference).

[0070] Figure 5 is a cross-sectional view showing a substrate according to a fourth embodiment of the present invention.

[0071] like Figure 5 As shown, in the substrate 3000B according to the fourth embodiment of the present invention, the first hole 100a can be formed by irradiating laser. Here, by increasing the intensity of the laser, the first polymer layer 110 and the semiconductor layer 112 are completely removed from the area corresponding to the first hole 100a, and therefore, the semiconductor layer 112 can only remain around the first hole 100a.

[0072] In this case, the inorganic interlayer insulating film 115 may be exposed through the first hole 100a. Therefore, since the first polymer layer 110 and the semiconductor layer 112 are not disposed above the camera (ie, in the first hole 100a), it may be expected that the recognition capability of the camera is improved.

[0073] Figure 6 is a cross-sectional view showing a substrate according to a fifth embodiment of the present invention.

[0074] like Figure 6 As shown, in the substrate 3000C according to the fifth embodiment of the present invention, the semiconductor layer 313 is only retained in the first hole 100a. In this case, the semiconductor layer 313 is directly exposed to the outside, so when the camera is located in the first hole 100a, the function of collecting conductive ions can be enhanced and the recognition ability of the camera can be improved.

[0075] Figure 7 is a cross-sectional view showing a substrate according to a sixth embodiment of the present invention.

[0076] like Figure 7 As shown, in the substrate 3000D according to the sixth embodiment of the present invention, the interior of the first hole formed by removing the first polymer layer 110 is filled with a transparent organic resin 400, thereby preventing the formation of steps (i.e., height difference) with the first polymer layer 110, and the transparent organic resin 400 is moisture-proof and has a higher transmittance than the first polymer layer 110.

[0077] This is for preventing foreign matter such as dust from being introduced into the substrate 3000D through the first hole after the first hole corresponding to the camera is formed.

[0078] The above-described substrates 100 , 300 , 3000A, 3000B, 3000C, and 3000D according to the first to sixth embodiments may include a camera, and may be applied to a display device as described below.

[0079] Hereinafter, the display device will be described in more detail.

[0080] Figure 8 is a plan view showing a display device according to the present invention, Fig. 9 yes Figure 8 Cross-sectional view of part A.

[0081] like Figure 8 and 9 As shown, the display device 1000 may include a camera area CA in a designated area of ​​a substrate 3000A, and the camera 700 may be disposed in the camera area CA under the substrate 3000A.

[0082] like Fig. 9 As shown, the camera 700 includes a camera lens 710, a camera module 720 supporting the camera lens 710, and a camera circuit board 730 which is connected to the camera lens 710 and applies an electrical signal.

[0083] The camera area CA may be formed as a hole ( Figures 4 to 6 100a) shown in FIG. 100a), and the camera lens 710 can be inserted into the camera area CA. As the situation requires, the camera module 720 can be inserted into the camera area CA or located at the periphery of the camera area CA.

[0084] The camera circuit board 730 may be connected to the camera lens 710 at a right angle, extend to the periphery of the camera area CA, and be mounted on the back surface of the substrate 3000A.

[0085] The back plate 800 may be adhered to the lower surface of the first polymer layer 110 disposed as the lowermost layer of the substrate 3000A through the adhesive layer 850. In this case, the camera circuit board 730 may contact the back side of the back plate 800.

[0086] In addition, the buffer stack 200 and the panel array 4000 may be located on the upper surface of the substrate 3000A, and the polarizing plate 250 may be disposed on the upper surface of the panel array 4000 to prevent reflection of external light.

[0087] A portion of the polarization plate 250 corresponding to the camera area CA may be removed, thereby being able to improve the recognition capability of the camera 700 .

[0088] As the situation requires, a portion of the polarizing plate 250 spaced apart from the camera area CA may be removed, thereby preventing the loss of the amount of light incident on the camera lens 710 caused by using the polarizing plate 250 including a dichroic dye formed of a light-absorbing material, thereby improving the recognition capability of the camera 700.

[0089] The display device 1000 can obtain the above-mentioned effect of the substrate by applying the substrate provided with the first hole 100a corresponding to the camera area CA described in each of the third to sixth embodiments to the display device 1000 and installing the camera 700 corresponding to the first hole 100a.

[0090] The display panel described in the present invention has a structure including a substrate, a panel array and an encapsulation layer on the substrate, without any housing structure. In addition, the display device described in the present invention may have a broader meaning than a display panel in concept, and include a unit for protecting the display panel, a camera, and a unit for protecting the camera. Figure 2 shows a display panel, Figure 8 and Fig. 9 A display device is shown. Figure 1 In addition to the substrate 100 of the first embodiment shown in the figure, the substrates 300 and 3000A to 3000D according to the second to sixth embodiments may be used to implement Figure 2 The display panel shown in FIG. 1 and the substrates 3000A to 3000D according to the third to sixth embodiments can be used to implement Figure 8 and Fig. 9 The display device shown.

[0091] The display panel according to the present invention grounds charges entering a polymer substrate through a semiconductor layer disposed between polymer layers, thereby minimizing electrical influence on a panel array disposed on the polymer substrate and improving reliability of elements.

[0092] Furthermore, a semiconductor layer can be formed without a separate mask to remove conductive ions, and thus the yield of display devices can be improved.

[0093] In addition, in a structure in which a portion of the thickness of the substrate is removed from a designated area, the semiconductor layer can protect the inorganic interlayer insulating film provided in the substrate, thereby being able to effectively prevent moisture penetration.

[0094] In addition, the display panel of the present invention has a structure in which a portion of the thickness of the substrate is removed from a designated area and a camera corresponding to the designated area is provided. When the semiconductor layer is removed from the designated area, the transmittance can be increased and the recognition capability of the camera can be improved.

[0095] Here, the position of the semiconductor layer and the shape of the hole formed in a designated area of ​​the substrate may be adjusted according to various forms of display devices.

[0096] To achieve this, a display panel according to an embodiment of the present invention may include a substrate including a plurality of polymer layers, an inorganic interlayer insulating film disposed between the polymer layers, a semiconductor layer configured to contact the inorganic interlayer insulating film, and a panel array disposed on the substrate.

[0097] The semiconductor layer may be formed of amorphous silicon or polycrystalline silicon.

[0098] The semiconductor layer may be doped with n-type or p-type conductive impurities.

[0099] A portion of the thickness of the substrate may be removed from one surface of the substrate where the panel array is not disposed in the first region of the substrate while the inorganic interlayer insulating film in the first region of the substrate remains.

[0100] The semiconductor layer may be located around the first region of the substrate.

[0101] The semiconductor layer located in the first region of the substrate and the semiconductor layer located around the first region of the substrate may have different crystallinity.

[0102] The semiconductor layer may be provided only in the first region of the substrate.

[0103] A camera may be disposed below the first region of the substrate.

[0104] The polymer layer may include a first polymer layer and a second polymer layer, the semiconductor layer and the inorganic interlayer insulating film may be sequentially disposed between the first polymer layer and the second polymer layer, and the semiconductor layer may be disposed closer to the camera.

[0105] A display device according to one embodiment of the present invention may include: a substrate, a panel array and a camera, wherein the substrate includes a first polymer layer, a second polymer layer, and a semiconductor layer and an inorganic interlayer insulating film arranged between the first polymer layer and the second polymer layer, the panel array is arranged on the second polymer layer, and the camera is arranged below the substrate.

[0106] A backing sheet may be adhered to the lower surface of the first polymer layer.

[0107] The camera may include a camera lens, a camera module, and a camera circuit board, and the camera circuit board may extend from a lower portion of the camera lens and the camera module to a lower surface of the back plate.

[0108] A camera lens may be inserted into the first polymer layer.

[0109] The semiconductor layer may be spaced apart from the camera lens, and may be disposed in a region of the substrate surrounding the camera lens.

[0110] The semiconductor layer located in a region of the substrate corresponding to the camera lens and the semiconductor layer located around the camera lens may have different crystallinity.

[0111] The semiconductor layer may be formed of amorphous silicon or polycrystalline silicon.

[0112] The semiconductor layer may be doped with n-type or p-type conductive impurities.

[0113] As apparent from the above description, the display panel according to the present invention and the display device using the same have the following effects.

[0114] First, the semiconductor layer disposed between the polymer layers grounds the charges entering the polymer substrate, thereby minimizing the electrical influence on the panel array disposed on the polymer substrate and improving the reliability of the device.

[0115] Second, a semiconductor layer can be formed without a separate mask to remove conductive ions, and thus the yield of display devices can be improved.

[0116] Third, in a structure in which a portion of the thickness of the substrate is removed from a designated area, the semiconductor layer can protect the inorganic interlayer insulating film provided in the substrate, thereby being able to effectively prevent moisture penetration.

[0117] Fourthly, the display panel of the present invention has a structure in which a portion of the thickness of the substrate is removed from a designated area and a camera corresponding to the designated area is provided. When the semiconductor layer is removed from the designated area, the transmittance can be increased and the recognition capability of the camera can be improved.

[0118] Fifth, the position of the semiconductor layer and the shape of the hole formed in the substrate may be adjusted according to various forms of display devices.

[0119] For those skilled in the art, it is obvious that various modifications and changes can be made to the present invention without departing from the spirit or scope of the present invention. Therefore, the present invention is intended to cover modifications and changes of the present invention as long as they fall within the scope of the appended claims and their equivalents.

Claims

1. A display panel, comprising: a substrate comprising a plurality of polymer layers; an inorganic interlayer insulating film and a semiconductor layer located between the plurality of polymer layers; and a panel array located above the substrate, Before contacting the surface of the inorganic interlayer insulating film, a first region of the substrate is removed from a surface of the substrate configured not to contact the panel array.

2. The display panel according to claim 1, wherein: The semiconductor layer is formed of amorphous silicon or polycrystalline silicon.

3. The display panel according to claim 1, wherein: The semiconductor layer is doped with n-type or p-type conductive impurities.

4. The display panel according to claim 1, wherein: The semiconductor layer contacts an upper surface or a lower surface of the inorganic interlayer insulating film.

5. The display panel according to claim 1, wherein: The panel array includes a thin film transistor, a light emitting element connected to the thin film transistor, and an encapsulation layer configured to protect the light emitting element.

6. The display panel according to claim 1, wherein: The semiconductor layer is disposed only around the first region of the substrate.

7. The display panel according to claim 1, wherein: The semiconductor layer includes a first semiconductor layer located in the first region of the substrate and a second semiconductor layer located around the first region of the substrate, the first semiconductor layer and the second semiconductor layer having different crystallinity.

8. The display panel according to claim 1, wherein: The semiconductor layer is disposed only in the first region of the substrate. 9 . The display panel of claim 1 , further comprising a camera disposed below the first area of ​​the substrate.

10. The display panel according to claim 1, wherein: The interior of the first region of the substrate is filled with a transparent organic resin.

11. A display device, comprising: A substrate comprising a first polymer layer, a second polymer layer, and a semiconductor layer and an inorganic interlayer insulating film disposed between the first polymer layer and the second polymer layer; a panel array located above the second polymer layer; and a camera, located below the substrate, The first polymer layer is locally removed in an area corresponding to the camera. 12 . The display device of claim 11 , further comprising a backplane adhered to a lower surface of the first polymer layer.

13. The display device according to claim 12, wherein: The camera includes a camera lens, a camera module and a camera circuit board. The camera circuit board extends from the lower portion of the camera lens and the camera module to the lower surface of the back plate.

14. The display device according to claim 13, wherein: The camera lens is inserted into the first polymer layer.

15. The display device according to claim 13, wherein: The semiconductor layer is provided only in a region of the substrate surrounding the camera lens.

16. The display device according to claim 13, wherein: The semiconductor layer includes a first semiconductor layer located in a region of the substrate corresponding to the camera lens and a second semiconductor layer located around the camera lens, the first semiconductor layer and the second semiconductor layer having different crystallinity.

17. The display device according to claim 11, wherein: The semiconductor layer is provided only in a region of the substrate corresponding to the camera.

18. The display device according to claim 11, wherein: The semiconductor layer is disposed closer to the camera than the inorganic interlayer insulating film.

19. The display device according to claim 11, wherein: The semiconductor layer is formed of amorphous silicon or polycrystalline silicon.

20. The display device according to claim 11, wherein: The semiconductor layer is doped with n-type or p-type conductive impurities.

Citation Information

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