Neural Network Systems and Neural Network Computation Methods
CN113139641BActive Publication Date: 2026-06-30HUAWEI TECH CO LTD +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUAWEI TECH CO LTD
- Filing Date
- 2020-01-20
- Publication Date
- 2026-06-30
AI Technical Summary
Technical Problem
In artificial neural network chips, DACs and ADCs occupy a large proportion of the area and power consumption, affecting chip performance improvement.
Method used
Using resistive random access memory (RRAM) as an analog device, multiplication and addition operations are achieved through memristor arrays and current-to-voltage converters, avoiding the use of DACs and ADCs. Neuron functions are realized by utilizing the resistance changes of RRAM, and differential operations are performed through differential circuits.
Benefits of technology
It saves chip area and power consumption, while improving the feature selectivity and recognition ability of the neural network system and enhancing computational efficiency.
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Smart Images
Figure CN113139641B_ABST
Abstract
This application provides a neural network system and a neural network calculation method, relating to the field of electronic technology, which can save chip area and power consumption. The neural network system includes a first memristor array, multiple current-to-voltage converters, and multiple resistive random access memories (RRAMs). The first memristor array includes multiple rows and columns of memristors for receiving first input data and performing multiplication and addition operations on the first input data according to configured first weights to obtain current. Each current-to-voltage converter is connected to the output terminal of at least one column of memristors in the first memristor array, for receiving the current of the corresponding column of memristors and converting the received current into voltage. Each RRAM is connected to at least one current-to-voltage converter, for receiving the voltage of the corresponding current-to-voltage converter, and obtaining one of the calculation results from the first calculation results based on the received voltage and the initial resistance state of the corresponding RRAM. The initial resistance state of each RRAM is a high resistance state.
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