A packaging structure for improving the vertical breakdown resistance of GaN HEMT

Abstract

The present invention provides a packaging structure for improving the vertical breakdown resistance of a GaN HEMT, comprising: a GaN HEMT, wherein the source, drain, and gate electrodes of the GaN HEMT are all located on a first surface, and a substrate is disposed on a second surface opposite the first surface; a double-sided metal-ceramic substrate, wherein the upper surface metal layer of the double-sided metal-ceramic substrate is connected to the substrate of the GaN HEMT via solder; and further comprising: a first resistor and a second resistor, wherein one end of the first resistor is connected to the drain of the GaN HEMT and the other end is connected to the upper surface metal layer of the double-sided metal-ceramic substrate, and one end of the second resistor is connected to the upper surface metal layer of the double-sided metal-ceramic substrate and the other end is connected to the source of the GaN HEMT. The present invention primarily utilizes resistors to adjust the substrate voltage, achieving optimized voltage distribution between the drain and substrate voltage difference and the source and substrate voltage difference of the GaN HEMT, thereby improving the vertical breakdown resistance of the GaN HEMT.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic component manufacturing, and in particular to a packaging structure for improving the vertical breakdown resistance of a GaN HEMT. Background Art

[0002] Wide bandgap semiconductor materials represented by gallium nitride (GaN) have a large bandgap (~3.4eV) and a high critical breakdown field strength (~3.3×10 6 V / cm), high electron saturation velocity (~2.7×10 7 Advantages such as a high thermal conductivity (~2 W / cm·K) and a high thermal conductivity (~2 W / cm·K) make GaN a significant advantage in the design and manufacture of power electronic devices. It is expected to become an ideal material to replace traditional silicon-based devices in the 600V to 1200V medium voltage range. Due to its excellent performance in switching speed, conversion efficiency, and switching loss, GaN power electronic devices are increasingly being commercialized.

[0003] Gallium nitride high electron mobility transistors (GaN HEMTs) are currently typically horizontal structures due to their material properties. The vertical voltage withstand capability limits the device's design voltage, which is closely related to the device's applicable scenarios. This makes vertical voltage withstand a fundamental and critical parameter. When the GaN HEMT substrate is directly grounded, the vertical voltage drop across the chip equals the design voltage. However, when the GaN HEMT substrate is suspended, the substrate voltage fluctuates with the drain voltage, but the voltage differences between the GaN HEMT drain and substrate, and between the source and substrate, do not achieve optimal voltage distribution.

[0004] In order to improve the vertical voltage resistance of GaN HEMT, expand its application range, and ensure high stability in practical applications, it is urgent to develop a GaN HEMT structure that can balance the substrate voltage. Summary of the Invention

[0005] To address the aforementioned technical issue of existing GaN HEMTs failing to achieve optimal voltage distribution between the drain and substrate voltages, and between the source and substrate voltages, a packaging structure is provided to enhance the vertical breakdown resistance of GaN HEMTs. This invention primarily utilizes resistors to actively adjust the substrate voltage, achieving optimal distribution of the drain and source voltage differences, thereby enhancing the vertical breakdown resistance of the GaN HEMT.

[0006] The technical means adopted in the present invention are as follows:

[0007] A packaging structure for improving the vertical breakdown resistance of a GaN HEMT, comprising:

[0008] A GaN HEMT, wherein the source, drain, and gate electrodes of the GaN HEMT are all located on a first surface, and a substrate is provided on a second surface opposite to the first surface;

[0009] A double-sided metal-ceramic substrate, wherein the upper surface metal layer of the double-sided metal-ceramic substrate is connected to the substrate of the GaN HEMT via solder;

[0010] Also includes:

[0011] a first resistor and a second resistor, wherein one end of the first resistor is connected to the drain of the GaN HEMT and the other end is connected to the upper surface metal layer of the double-sided metal-clad ceramic substrate; and one end of the second resistor is connected to the upper surface metal layer of the double-sided metal-clad ceramic substrate and the other end is connected to the source of the GaN HEMT.

[0012] Furthermore, the first resistor and the second resistor satisfy the following relationship:

[0013] 0.01% × R D ≤R1≤100%×R D

[0014]

[0015] Among them, R1 is the first resistor, R2 is the second resistor, R D is the resistance between the GaN HEMT drain and its substrate, R S is the resistance between the GaN HEMT substrate and its source.

[0016] Furthermore, the resistance between the GaN HEMT drain and its substrate, and the resistance between the GaN HEMT substrate and its source are obtained according to the following steps:

[0017] Get the GaN HEMT drain operating voltage V D and the source operating voltage is V S ;

[0018] When the GaN HEMT is in the off state, the substrate is suspended, the source is grounded, and the drain voltage is continuously increased from 0V. The substrate voltage and the leakage current between the drain and the source are monitored.

[0019] When the voltage difference between the drain and substrate reaches 0.5*(V D -V S ), record the leakage current I1 between the drain and source. At this time, calculate the resistance between the GaN HEMT drain and its substrate according to the following formula:

[0020]

[0021] When the voltage difference between the substrate and the source reaches 0.5*(V D -V S ), record the leakage current I2 between the drain and source. At this time, calculate the resistance between the GaN HEMT substrate and its source according to the following formula:

[0022]

[0023] Furthermore, the upper surface metal layer and the lower surface metal layer of the double-sided metal-clad ceramic substrate are not electrically connected via the insulating layer of the ceramic substrate.

[0024] Furthermore, the insulating layer is aluminum oxide, or aluminum nitride, or silicon nitride, or zirconium oxide toughened aluminum oxide.

[0025] Furthermore, the thickness of the insulating layer is 10 μm-10 mm.

[0026] Furthermore, the upper surface metal layer and the lower surface metal layer of the double-sided metal-clad ceramic substrate are both laminated structures, and are composed of copper, nickel, palladium, and gold, or copper, nickel, and gold, in order from the insulating layer to the outside.

[0027] Furthermore, when the stacked structure is a combination of copper, nickel, palladium and gold, the copper thickness is 1-10000 μm, the nickel thickness is 0.1-100 μm, the palladium thickness is 0.01-100 μm, and the gold thickness is 0.01-100 μm; when the stacked structure is a combination of copper, nickel and gold, the copper thickness is 1-10000 μm, the nickel thickness is 0.1-100 μm, and the gold thickness is 0.01-100 μm.

[0028] Furthermore, the solder used is solder paste, solder wire, solder sheet, ordinary silver paste or sintered silver paste.

[0029] Furthermore, the thickness of the solder is 1-1000 μm.

[0030] Compared with the prior art, the present invention has the following advantages:

[0031] 1. The present invention optimizes the distribution of the voltage difference between the source and substrate, and the voltage difference between the drain and substrate of the GaN HEMT by regulating the substrate voltage, thereby improving the vertical breakdown resistance of the GaN HEMT and its stability during actual application, thereby expanding its application scenarios.

[0032] 2. The present invention realizes the regulation of GaN HEMT substrate voltage by means of series and parallel resistors, which has a wide range of applications and strong operability.

[0033] Based on the above reasons, the present invention can be widely promoted in the field of electronic component manufacturing. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0035] Figure 1 This is a schematic diagram of the packaging structure of the present invention.

[0036] Figure 2 This is a cross-sectional view of the packaging structure of the present invention.

[0037] Figure 3a This is a top view of the packaging structure in Example 1.

[0038] Figure 3b This is a cross-sectional view of the packaging structure in Example 1.

[0039] Figure 4a This is a top view of the packaging structure in Example 2.

[0040] Figure 4b This is a cross-sectional view of the packaging structure in Example 2.

[0041] Figure 5a This is a top view of the packaging structure in Example 3.

[0042] Figure 5b This is a cross-sectional view of the packaging structure in Example 3. DETAILED DESCRIPTION

[0043] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments of the present invention can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0044] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0045] like Figure 1-2As shown, the present invention discloses a packaging structure for improving the vertical breakdown resistance of GaN HEMT, including GaN HEMT, a double-sided metal-ceramic substrate, a first resistor R1 and a second resistor R2.

[0046] The source (S in the figure), drain (D in the figure), and gate (G in the figure) electrodes of the GaN HEMT are all located on the first surface, and a substrate is provided on the second surface opposite the first surface. The upper surface metal layer of the double-sided metal-ceramic substrate (point B in the figure) is connected to the substrate of the GaN HEMT via solder. One end of a first resistor R1 is connected to the drain of the GaN HEMT and the other end is connected to the upper surface metal layer of the double-sided metal-ceramic substrate. One end of a second resistor R2 is connected to the upper surface metal layer of the double-sided metal-ceramic substrate and the other end is connected to the source of the GaN HEMT. The present invention primarily utilizes resistors to adjust the substrate voltage, achieving optimized voltage distribution between the GaN HEMT drain and substrate voltage difference and the source and substrate voltage difference, thereby improving the vertical breakdown resistance of the GaN HEMT.

[0047] In an embodiment of the present invention, the upper and lower metal layers of a double-sided metal-clad ceramic substrate are isolated from each other by an insulating layer on the ceramic substrate. Preferably, the insulating layer is aluminum oxide, aluminum nitride, silicon nitride, or zirconium oxide-toughened aluminum oxide. The thickness of the insulating layer ranges from 10 μm to 10 mm.

[0048] Further preferably, the upper surface metal layer and the lower surface metal layer of the double-sided metal-clad ceramic substrate are both laminated structures, and are, from the insulating layer outward, a combination of copper, nickel, palladium, and gold, or a combination of copper, nickel, and gold. Still further preferably, when the laminated structure is a combination of copper, nickel, palladium, and gold, the copper thickness is 1-10,000 μm, the nickel thickness is 0.1-100 μm, the palladium thickness is 0.01-100 μm, and the gold thickness is 0.01-100 μm. When the laminated structure is a combination of copper, nickel, and gold, the copper thickness is 1-10,000 μm, the nickel thickness is 0.1-100 μm, and the gold thickness is 0.01-100 μm.

[0049] In the embodiment of the present invention, the solder used is solder paste, solder wire, solder sheet, ordinary silver paste or sintered silver paste, and the thickness of the solder is 1-1000 μm.

[0050] In the embodiment of the present invention, the first resistor R1 and the second resistor R2 satisfy the following relationship:

[0051] 0.01% × R D ≤R1≤100%×R D

[0052]

[0053] Among them, R D is the resistance between the GaN HEMT drain and its substrate, R S is the resistance between the GaN HEMT substrate and its source.

[0054] Furthermore, the resistance between the GaN HEMT drain and its substrate, and the resistance between the GaN HEMT substrate and its source are obtained according to the following steps:

[0055] Step 1: Obtain the GaN HEMT drain operating voltage V D and the source operating voltage is V S ;

[0056] Step 2: When the GaN HEMT is in the off state, the substrate is suspended, the source is grounded, and the drain voltage is continuously increased from 0V. The substrate voltage and the leakage current between the drain and the source are monitored.

[0057] Step 3: When the voltage difference between the drain and substrate reaches 0.5*(V D -V S ), record the leakage current I1 between the drain and source. At this time, calculate the resistance between the GaN HEMT drain and its substrate according to the following formula:

[0058]

[0059] Step 4: When the voltage difference between the substrate and the source reaches 0.5*(V D -V S ), record the leakage current I2 between the drain and source. At this time, calculate the resistance between the GaN HEMT substrate and its source according to the following formula:

[0060]

[0061] The scheme and effects of the present invention are further described below through specific embodiments.

[0062] Example 1

[0063] like Figure 3a-3b As shown, this embodiment provides a packaging structure capable of improving the vertical breakdown resistance of a GaN HEMT, including: a frame, a double-sided metal-ceramic substrate, and a GaN HEMT.

[0064] The frame is made of copper, 0.2mm thick, and is used to support and fix other structures. It has a silver-plated area.

[0065] Double-sided metal-clad ceramic substrate, where the front and back metal materials of the ceramic substrate are the same, and the metal layers and their thicknesses from the ceramic side to the outside are Cu / Ni / Pd / Au 100 / 3 / 0.05 / 10μm, respectively. The metal on the bottom surface of the ceramic substrate is a single base island, which is connected to the silver-plated area of the frame through silver glue, and the front surface is a triple base island, as shown in the following figure. Figure 3a In the method, the first resistor R1, the second resistor R2 and the GaN HEMT are fixed by ordinary silver glue, and the two ends of the two resistors are electrically connected to the metal layer of the ceramic substrate through the silver glue; the metal layers on the upper and lower surfaces of the ceramic substrate are not conductive, the ceramic layer of the ceramic substrate is AlN, with a thickness of 250μm, and the silver glue is 20μm thick.

[0066] The source and gate of the GaN HEMT are connected to the frame carrier and the left pin of the frame, respectively, via 25μm gold wire. The drain of the GaN HEMT is connected via gold wire to the right pin of the frame and a small island on the upper right side of the metal layer on the ceramic substrate's top surface. This island is electrically connected to one end of the first resistor R1 via silver glue. The other end of the first resistor R1 and one end of the second resistor R2 are both connected to the large island on the top surface of the ceramic substrate via silver glue, and then to the GaN HEMT substrate via silver glue to achieve equal potential. The other end of the second resistor R2 is electrically connected to the source of the GaN HEMT via silver glue, the small island on the lower right side of the ceramic substrate's top surface, gold wire, the frame carrier, and finally gold wire.

[0067] The GaN HEMT drain operating voltage V D The source voltage Vs is 700V, and the source operating voltage is 0V. The GaN HEMT is in the off state, with the substrate floating, the source grounded, and the drain voltage continuously increasing from 0V. The substrate voltage increases with the drain voltage. By monitoring the substrate voltage and the leakage current between the drain and source (which is equal to the leakage current between the drain and substrate and the leakage current between the source and substrate), the resistance between the GaN HEMT drain and its substrate can be calculated based on the drain-substrate voltage difference and the drain-substrate leakage current. Similarly, the resistance between the GaN HEMT substrate and source can be calculated based on the substrate-source voltage difference and the substrate-source leakage current.

[0068] When the drain voltage is 450V and the substrate voltage is 100V, the voltage difference between the drain and substrate is 350V (0.5*(V D -V S )), at this time the drain and source leakage current is I1=1*10 -9 A, then the resistance between the drain and the substrate R D =350000MΩ When the drain voltage is 1000V and the substrate voltage is 350V, the voltage difference between the substrate and the source is 350V (0.5*(V D -V S)), at this time the drain and source leakage current is I2=1*10 -8 A, then the resistance between the drain and the substrate R S =35000MΩ

[0069] The preferred value of R1 is 35MΩ (0.01% × R D ≤R1≤100%×R D ), R2 is 35MΩ

[0070]

[0071] Without the packaging structure of this embodiment and with the GaN HEMT substrate grounded, the drain voltage of the GaN HEMT during operation is 700 V, the substrate voltage is 0 V, and the vertical voltage difference is 700 V. Without the packaging structure of this embodiment and with the GaN HEMT substrate suspended in the air, the drain voltage of the GaN HEMT during operation is 700 V, the substrate voltage is approximately 200 V, and the vertical voltage difference is approximately 500 V. With the packaging structure of the embodiment of the present invention, the drain voltage of the GaN HEMT is 700 V, the substrate voltage is approximately 350 V, and the vertical voltage difference is 350 V, which significantly reduces the vertical voltage difference compared to the case without the packaging structure of this embodiment.

[0072] Example 2

[0073] like Figure 4a-4b As shown in FIG. 1 , the packaging structure for improving the vertical breakdown resistance of the GaN HEMT in this embodiment includes: a frame made of copper with a thickness of 0.4 mm, used to support and fix other structures, and provided with a silver-plated area on the frame; a double-sided metal-clad ceramic substrate, wherein the front and back metal materials of the ceramic substrate are the same, and the metal layers and their thicknesses from the ceramic side outward are Cu / Ni / Au200 / 3 / 20 μm, respectively. The metal on the back of the ceramic substrate is a single base island connected to the silver-plated area of the frame by silver glue, and the front side is a triple base island, which is arranged in a specific manner (such as Figure 4a Sintered silver glue is used to secure the first resistor R1, the second resistor R2, the GaN HEMT, and the MOS FET. The metal layers on the upper and lower surfaces of the ceramic substrate are non-conductive. The ceramic layer of the ceramic substrate is aluminum oxide and has a thickness of 380 μm. The MOS FET gate is connected to the left pin of the frame via a gold wire, and the source is connected to the GaN HEMT gate and the frame carrier via gold wires. The GaN HEMT source is connected to the MOSFET drain via a gold wire, the metal layer on the upper surface of the ceramic substrate, and silver glue. It is also connected to one end of the resistor R2 via the metal layer on the upper surface of the ceramic substrate and silver glue. The other end of resistor R2 and one end of R1 are connected to the GaN HEMT substrate at the same potential via silver glue, the metal layer on the upper surface of the ceramic substrate, and silver glue. The GaN HEMT drain is connected to the right pin of the frame and one end of resistor R1 via gold wire.

[0074] When the device is working, the GaN HEMT drain voltage VD is 850V and the source voltage Vs is 50V; the GaN HEMT is in the off state, the substrate is floating, the source is grounded, and the drain voltage continues to increase from 0V. When the drain voltage is 550V and the substrate voltage is 150V, the voltage difference between the drain and the substrate is 400V (0.5*(V D -V S )), at this time the drain and source leakage current is I1=5*10 -9 A, then the resistance between the drain and the substrate R D =80000MΩ When the drain voltage is 1100V and the substrate voltage is 400V, the voltage difference between the substrate and the source is 400V (0.5*(V D -V S )), at this time the drain and source leakage current is I2=5*10 -8 A, then the resistance between the drain and the substrate R S =8000MΩ

[0075] At this time, the preferred value of R1 is 100MΩ (0.01% × R D ≤R1≤100%×R D ), R2 takes the value of 100

[0076] Using the packaging structure of the present invention, during device operation, the GaN HEMT drain voltage is 850V, the source voltage is 50V, the substrate voltage is approximately 450V, and the voltage differences between the drain and substrate, and between the source and substrate, are both approximately 400V, thus achieving an optimized distribution of the voltage difference in the vertical direction.

[0077] Example 3

[0078] like Figure 5a-5bAs shown, this embodiment also provides another packaging structure for improving the vertical breakdown resistance of GaN HEMT, including: a frame, the frame material is copper, the thickness is 0.2mm, used to support and fix other structures, and the frame is provided with a silver-plated area; a double-sided metal-clad ceramic substrate, the front and back metal materials of the ceramic substrate are the same, and the metal layers and their thicknesses from the ceramic side to the outside are Cu / Ni / Pd / Au 100 / 3 / 0.05 / 5μm, respectively. The metal on the back of the ceramic substrate is a single base island connected to the silver-plated area of the frame through ordinary silver glue, and the front is a single base island connected to the GaN HEMT substrate through ordinary silver glue, and the metal layers on the upper and lower surfaces of the ceramic substrate are not conductive. The ceramic layer of the ceramic substrate is AlN with a thickness of 1000μm, and the silver glue has a thickness of 20μm; GaN In the HEMT structure, two thin strips of two-electron gas are fabricated using wafer processing, serving as resistors R1 and R2. One end of R1 is connected to the drain via a metal wire (fabricated using wafer processing), while the other end of R1 is connected to one end of R2 via an electrode. The other end of R2 is connected to the drain via metal. The electrodes between R1 and R2 are connected to the GaN HEMT substrate using gold wire, a metal layer on the ceramic substrate, and silver glue to achieve equipotential with the GaN HEMT substrate. The source, gate, and drain of the GaN HEMT are connected to the frame carrier, left pin, and right pin of the frame, respectively, via gold wire.

[0079] The GaNHEMT drain operating voltage of this device is V D is 700V, the source operating voltage is V S When the GaN HEMT is not equipped with a resistor, the GaN HEMT is in the off state, the substrate is suspended, the source is grounded, and the drain voltage is continuously increased from 0V. When the drain voltage is 450V and the substrate voltage is 100V, the voltage difference between the drain and the substrate is 350V (0.5*(V D -V S )), at this time the drain and source leakage current is I1=1*10 -9 A, then the resistance between the drain and the substrate R D =350000MΩ When the drain voltage is 1000V and the substrate voltage is 350V, the voltage difference between the substrate and the source is 350V (0.5*(V D -V S )), at this time the drain and source leakage current is I2=1*10 -8 A, then the resistance between the drain and the substrate R S =35000MΩ

[0080] The preferred value of R1 is 35MΩ (0.01% × R D ≤R1≤100%×R D ), R2 is 35MΩ According to the resistance values of R1 and R2, they are manufactured on the GaN HEMT structure layer using wafer process.

[0081] The effect achieved is similar to that of Example 1. Without the structure of this embodiment and with the GaN HEMT substrate grounded, the drain voltage of the GaN HEMT during operation is 700V, the substrate voltage is 0V, and the vertical voltage difference is 700V. Without the structure of this embodiment and with the GaN HEMT substrate suspended, the drain voltage of the GaN HEMT during operation is 700V, the substrate voltage is approximately 200V, and the vertical voltage difference is approximately 500V. With the structure of this embodiment, the drain voltage of the GaN HEMT is 700V, the substrate voltage is approximately 350V, and the vertical voltage difference is 350V, significantly reducing the vertical voltage difference compared to without the structure of this embodiment. Compared to Example 1, this embodiment places the resistor inside the wafer, simplifying the packaging process.

[0082] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A packaging structure for improving the vertical breakdown resistance of a GaN HEMT, comprising: A GaN HEMT, wherein the source, drain, and gate electrodes of the GaN HEMT are all located on a first surface, and a substrate is provided on a second surface opposite to the first surface; A double-sided metal-ceramic substrate, wherein the upper surface metal layer of the double-sided metal-ceramic substrate is connected to the substrate of the GaN HEMT via solder; It is characterized by further comprising: a first resistor and a second resistor, wherein one end of the first resistor is connected to the drain of the GaN HEMT and the other end is connected to the upper surface metal layer of the double-sided metal-clad ceramic substrate; and one end of the second resistor is connected to the upper surface metal layer of the double-sided metal-clad ceramic substrate and the other end is connected to the source of the GaN HEMT.

2. The packaging structure according to claim 1, wherein: The first resistor and the second resistor satisfy the following relationship: Among them, R1 is the first resistor, R2 is the second resistor, R D is the resistance between the GaN HEMT drain and its substrate, R S is the resistance between the GaN HEMT substrate and its source.

3. The packaging structure according to claim 2, wherein: The resistance between the GaN HEMT drain and its substrate, and the resistance between the GaN HEMT substrate and its source are obtained according to the following steps: Get the GaN HEMT drain operating voltage V D and the source operating voltage is V S ; When the GaN HEMT is in the off state, the substrate is suspended, the source is grounded, and the drain voltage is continuously increased from 0V. The substrate voltage and the leakage current between the drain and the source are monitored. When the voltage difference between the drain and the substrate reaches 0.5*(V D -V S ), record the leakage current I1 between the drain and source. At this time, calculate the resistance between the GaN HEMT drain and its substrate according to the following formula: When the voltage difference between the substrate and the source reaches 0.5*(V D -V S ), record the leakage current I2 between the drain and source. At this time, calculate the resistance between the GaN HEMT substrate and its source according to the following formula:

4. The packaging structure according to claim 1, wherein: The upper surface metal layer and the lower surface metal layer of the double-sided metal-clad ceramic substrate are not electrically connected via the insulating layer of the ceramic substrate.

5. The packaging structure according to claim 4, wherein: The insulating layer is aluminum oxide, aluminum nitride, silicon nitride, or zirconium oxide toughened aluminum oxide.

6. The packaging structure according to claim 5, wherein: The thickness of the insulating layer is 10 μm-10 mm.

7. The packaging structure according to claim 4, wherein: The upper surface metal layer and the lower surface metal layer of the double-sided metal-clad ceramic substrate are both laminated structures, and are composed of copper, nickel, palladium, and gold, or copper, nickel, and gold, in order from the insulating layer to the outside.

8. The packaging structure according to claim 7, wherein: When the laminated structure is a combination of copper, nickel, palladium and gold, the copper thickness is 1-10000 μm, the nickel thickness is 0.1-100 μm, the palladium thickness is 0.01-100 μm, and the gold thickness is 0.01-100 μm; when the laminated structure is a combination of copper, nickel and gold, the copper thickness is 1-10000 μm, the nickel thickness is 0.1-100 μm, and the gold thickness is 0.01-100 μm.

9. The packaging structure according to claim 1, wherein: The solder used is solder paste, solder wire, solder sheet, ordinary silver glue or sintered silver glue.

10. The packaging structure according to claim 1, wherein: The thickness of the solder is 1-1000 μm.

Images