Crystal growth equipment
By using a crucible design with sidewalls and top deposition sections in the crystal growth equipment, combined with nozzles and heating elements, the problem of temperature and atmosphere control during the growth of large-size single crystals was solved, achieving high-quality crystal growth.
CN113166969BActive Publication Date: 2026-05-26EBNER-INDUSTRIEOFENBAU GMBH
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- EBNER-INDUSTRIEOFENBAU GMBH
- Filing Date
- 2019-11-19
- Publication Date
- 2026-05-26
AI Technical Summary
Technical Problem
When growing large-sized, high-quality single crystals such as SiC and Al2O3, it is difficult to provide stable temperature, pressure, and atmosphere, resulting in uneven crystal growth and numerous defects.
Method used
A crystal growth apparatus including a crucible with sidewalls and a top deposition section for attaching seed crystals is designed. Combined with nozzles and heating elements, lateral crystal growth is achieved by controlling the temperature gradient and atmosphere, thereby reducing atomic stacking defects.
Benefits of technology
It has enabled the growth of larger and higher quality single crystals, reduced defects in the crystal growth process, and improved the uniformity and controllability of crystal growth.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN113166969B_ABST
Abstract
The present invention relates to an apparatus (100) for growing crystals. The apparatus includes a chamber (101) and a crucible (102) disposed in a heatable receiving space (103) within the chamber (101), wherein the crucible (102) includes an internal volume (104) configured for growing crystals therein. The crucible (102) includes a bottom (105) from which a corresponding sidewall (106) extends to a top section (107) of the crucible (102). The crucible (102) includes at least one deposition section (D1 to D7) configured for attaching a seed crystal (108), wherein the deposition section (D1 to D7) is formed on at least one of the sidewall (106) and the top section (107) of the crucible (102).
Need to check novelty before this filing date? Find Prior Art