Display device and electronic device

Abstract

A display device includes: a plurality of first electrodes provided for each pixel; an insulating layer provided between the first electrodes and covering the outer peripheral edge portion of the first electrodes and containing a silicon compound; a first interface layer provided at the interface between the first electrode and the insulating layer and containing a first silicon oxide; an organic layer provided on the first electrode and the insulating layer to be common to all pixels and including a light emitting layer; and a second electrode provided on the organic layer. The insulating layer contains a second silicon oxide on a surface portion on the organic layer side.

Description

Technical Field

[0001] The present disclosure relates to a display device and an electronic device. Background Art

[0002] In recent years, as a display device having a plurality of organic light emitting diodes (OLEDs), a display device having an organic layer common to all pixels has been proposed. However, in a display device having such a configuration, leakage of a driving current may occur between adjacent light emitting elements.

[0003] Therefore, a technology for suppressing the leakage of driving current between adjacent light-emitting elements has been proposed. Patent document 1 proposes a technology in which an insulating film is provided in an inter-element region between a plurality of light-emitting elements, and a groove is provided at a position between adjacent light-emitting elements in the insulating film. In addition, Patent document 2 proposes a technology for forming at least a portion of the film thickness region of the insulating layer with a positively charged inorganic nitride.

[0004] Reference List

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2012-216338

[0007] Patent Document 2: International Publication No. 2018 / 147050 Summary of the invention

[0008] Technical problems solved by the invention

[0009] As described above, in recent years, in a display device having an organic layer common to all pixels, a technology for suppressing a drive current leakage generated between adjacent light emitting elements is desired.

[0010] An object of the present disclosure is to provide a display device and an electronic device capable of suppressing a driving current leakage generated between adjacent light emitting elements.

[0011] Solutions to the problem

[0012] In order to solve the above problems, the first disclosed content is a display device, which includes: a plurality of first electrodes, each first electrode is set for each pixel; an insulating layer, including a silicon compound, is set between the first electrodes and covers the outer peripheral edge portion of the first electrode; a first interface layer, including a first silicon oxide and is set at the interface between the first electrode and the insulating layer; an organic layer, including a light-emitting layer, and is set on the first electrode and the insulating layer, common to all pixels; and a second electrode, set on the organic layer, wherein the insulating layer contains a second silicon oxide in the surface portion of the organic layer side.

[0013] The second disclosed content is a display device, which includes: a plurality of first electrodes, each first electrode is arranged for each pixel; an insulating layer, comprising a silicon compound and arranged between the first electrodes; a first interface layer, comprising a first silicon oxide and arranged between the side surface of the first electrode and the side surface of the insulating layer; an organic layer, including a light-emitting layer, and arranged on the first electrode and the insulating layer, common to all pixels; and a second electrode, arranged on the organic layer, wherein the thickness of the organic layer on the first electrode is substantially constant.

[0014] The third disclosed content is a display device, which includes: a plurality of first electrodes, each first electrode is arranged for each pixel; an insulating layer, arranged between the first electrodes; a first interface layer, arranged between the side surface of the first electrode and the side surface of the insulating layer; an organic layer, including a light-emitting layer, and arranged on the first electrode and the insulating layer, common to all pixels; and a second electrode, arranged on the organic layer, wherein the thickness of the organic layer on the first electrode is substantially constant.

[0015] A fourth disclosure is an electronic device including the display device according to any one of the first to third disclosures. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] [ Figure 1 ] is a schematic diagram showing an example of the overall configuration of a display device according to the first embodiment of the present disclosure.

[0017] [ Figure 2 ] is a cross-sectional view showing an example of the configuration of a display device according to the first embodiment of the present disclosure.

[0018] [ Figure 3 ] is shown Figure 2 An enlarged cross-sectional view of a portion of a display device is shown in FIG.

[0019] [ Figure 4 ] is shown Figure 2 An enlarged cross-sectional view of an example of the configuration of the organic layer is shown in FIG.

[0020] [ Figure 5 ] is a cross-sectional view showing an example of the configuration of a display device according to Modification 1 of the first embodiment of the present disclosure.

[0021] [ Figure 6 ] is a cross-sectional view showing an example of the configuration of a display device according to Modification 2 of the first embodiment of the present disclosure.

[0022] [ Figure 7 ] is a cross-sectional view showing an example of the configuration of a display device according to Modification 3 of the first embodiment of the present disclosure.

[0023] [ Figure 8] is a cross-sectional view showing an example of the configuration of a display device according to Modification 4 of the first embodiment of the present disclosure.

[0024] [ Fig. 9 ] is a cross-sectional view showing an example of the configuration of a display device according to Modification 5 of the first embodiment of the present disclosure.

[0025] [ Fig.10 ] is a cross-sectional view showing an example of the configuration of a display device according to a second embodiment of the present disclosure.

[0026] [ Fig.11 ] is shown Fig.10 An enlarged cross-sectional view of a portion of a display device is shown in FIG.

[0027] [ Fig.12 ] is an enlarged cross-sectional view showing a portion of a display device according to a comparative example.

[0028] [ Fig.13 ] is an enlarged cross-sectional view showing a portion of a display device according to a comparative example.

[0029] [ Fig.14 ] is an enlarged cross-sectional view showing a portion of a display device according to a modified example.

[0030] [ Fig.15 ] Fig.15 A. Fig.15 B. Fig.15 C. Fig.15 D. Fig.15 E and Fig.15 F is a cross-sectional view showing an example of a manufacturing process of the display device.

[0031] [ Fig.16 ] Fig.16 A. Fig.16 B. Fig.16 C and Fig.16 D is a cross-sectional view showing an example of a manufacturing process of a display device.

[0032] [ Fig.17 ] is a cross-sectional view of an example of a configuration of a display device according to a modified example of the second embodiment of the present disclosure.

[0033] [ Fig.18 ] is an enlarged cross-sectional view showing a portion of a display device according to a third embodiment of the present disclosure.

[0034] [ Fig.19 ] is an enlarged cross-sectional view showing a portion of a display device according to a modified example.

[0035] [ Fig. 20 ] Fig. 20 A. Fig. 20 B and Fig. 20 C is a cross-sectional view showing an example of a manufacturing process of a display device.

[0036] [ Fig.21 ] Fig.21 A. Fig.21 B and Fig.21 C is a cross-sectional view showing an example of a manufacturing process of a display device.

[0037] [ Fig. 22 ] is a cross-sectional view showing an example of a configuration of a display device according to a modified example of the third embodiment of the present disclosure.

[0038] [ Fig.23 ] is a cross-sectional view showing an example of the configuration of a display device according to a fourth embodiment of the present disclosure.

[0039] [ Fig.24 ] Fig.24 A is shown Fig.23 An enlarged cross-sectional view of a portion of a display device is shown in FIG. Fig.24 B is an enlarged cross-sectional view showing a portion of a display device according to a modification example.

[0040] [ Fig.25 ] Fig.25 A is a schematic cross-sectional view for describing a first example of a resonator structure. Fig.25 B is a schematic cross-sectional view for describing a second example of the resonator structure.

[0041] [ Fig.26 ] Fig.26 A is a schematic cross-sectional view for describing a third example of the resonator structure. Fig.26 B is a schematic cross-sectional view for describing a fourth example of the resonator structure.

[0042] [ Fig. 27 ] Fig. 27 A is a schematic cross-sectional view for describing a fifth example of the resonator structure. Fig. 27 B is a schematic cross-sectional view for describing a sixth example of the resonator structure.

[0043] [ Fig.28 ] is a schematic cross-sectional view for describing a seventh example of a resonator structure.

[0044] [ Fig.29 ] is a plan view showing an example of a schematic configuration of a module.

[0045] [ Fig.30 ] Fig.30 A is a front view showing an example of the appearance of a digital still camera. Fig.30B is a rear view showing an example of the appearance of the digital still camera.

[0046] [ Fig.31 ] is a perspective view of an example of the appearance of a head-mounted display.

[0047] [ Fig.32 ] is a perspective view showing an example of the appearance of a television device.

[0048] [ Fig.33 ] is a perspective view showing an example of the appearance of a lighting device.

[0049] [ Fig.34 ] Fig.34 A is a diagram showing an absorption spectrum of a bulk layer measured by a Fourier transform infrared spectrometer. Fig.34 B is a diagram showing the absorption spectrum of the bulk layer measured by a Fourier transform infrared spectrophotometer.

[0050] [ Fig.35 ] is the peak intensity I derived from the NH bond N-H The peak intensity I derived from Si-H bond Si-H The peak intensity ratio (I N-H / I Si-H ) and the amount of leakage between pixels.

[0051] [ Fig.36 ] is a diagram showing the relationship between the average thickness of the first interface layer and the amount of leakage between pixels.

[0052] [ Fig.37 ] is a diagram showing the evaluation results of the luminous efficiency of the display devices of Examples 5-1 to 5-4 and Comparative Example 5-1.

[0053] [ Fig.38 ] Fig.38 A is a diagram showing a model of the electromagnetic field simulation of Example 6-1. Fig.38 B is a diagram showing a model of the electromagnetic field simulation of Example 6-2.

[0054] [ Fig.39 ] Fig.39 A is a diagram showing a model of the electromagnetic field simulation of Comparative Example 6-1. Fig.39 B is a diagram showing a model of the electromagnetic field simulation of Comparative Example 6-2.

[0055] [ Fig.40 ] is a diagram showing the analysis results of the electromagnetic field simulation of Example 6-1.

[0056] [ Fig.41 ]yes Fig.40 An enlarged view of region R1 in FIG.

[0057] [ Fig.42 ] is a diagram showing the analysis results of the electromagnetic field simulation of Example 6-2.

[0058] [ Fig.43 ]yes Fig.42 Magnified view of region R2 in FIG.

[0059] [ Fig.44 ] is a diagram showing the analysis results of the electromagnetic field simulation of Comparative Example 6-1.

[0060] [ Fig.45 ] is a diagram showing the analysis results of the electromagnetic field simulation of Comparative Example 6-2.

[0061] [ Fig.46 ]yes Fig.45 An enlarged view of region R3 in FIG. DETAILED DESCRIPTION

[0062] The embodiments of the present disclosure will be described in the following order. Note that in all the drawings of the following embodiments, the same reference numerals are given to the same or corresponding parts.

[0063] 1 First Implementation

[0064] 1-1 Display device configuration

[0065] 1-2 Method for manufacturing display device

[0066] 1-3 Effect

[0067] 1-4 Variations

[0068] 2 Second Embodiment

[0069] 2-1 Display device configuration

[0070] 2-2 Method for manufacturing display device

[0071] 2-3 Effect

[0072] 2-4 Variations

[0073] 3. Third Implementation

[0074] 3-1 Display device configuration

[0075] 3-2 Method for manufacturing display device

[0076] 3-3 Effect

[0077] 4. Fourth Embodiment

[0078] 4-1 Display device configuration

[0079] 4-2 Effect

[0080] 5 Examples of Resonator Structures Applicable to Embodiments

[0081] 6 Applications

[0082] [1-1 Configuration of display device]

[0083] Figure 1 An example of the overall configuration of an organic electroluminescent (EL) display device 10 (hereinafter referred to as "display device 10") according to a first embodiment of the present disclosure is shown. The display device 10 is applicable to various electronic devices, and includes a display area 110A on a substrate 11 and a peripheral area 110B on the peripheral edge of the display area 110A. A plurality of sub-pixels 100R, 100G, and 100B are arranged in a matrix form in the display area 110A. The sub-pixel 100R displays red, the sub-pixel 100G displays green, and the sub-pixel 100B displays blue. Note that in the following description, without particularly distinguishing the sub-pixels 100R, 100G, and 100B, they are referred to as (multiple) sub-pixels 100.

[0084] Each column of sub-pixels 100R, 100G, and 100B displaying the same color is repeatedly arranged in the row direction. Therefore, a combination of three sub-pixels 100R, 100G, and 100B arranged in the row direction constitutes one pixel. A signal line drive circuit 120 and a scan line drive circuit 130 as drivers for displaying an image are provided in the peripheral area 110B.

[0085] The signal line drive circuit 120 supplies a signal voltage of a video signal corresponding to brightness information supplied from a signal supply source (not shown) to the selected pixel via the signal line 120A. The scan line drive circuit 130 includes a shift register that sequentially shifts (transfers) a start pulse in synchronization with an input clock pulse, etc. When writing a video signal to a pixel, the scan line drive circuit 130 scans the video signal line by line and sequentially supplies the scan signal to the scan line 130A.

[0086] Figure 2 is a cross-sectional view showing an example of the configuration of the display device 10 according to the first embodiment of the present disclosure. Figure 3 It is shown Figure 21 is an enlarged cross-sectional view of a portion of a display device 10 shown in FIG. The display device 10 is a top emission type display device, and includes a substrate (first substrate) 11, a plurality of light emitting elements 12 and an insulating layer 13 provided on one main surface of the substrate 11, a protective layer 15 provided on the plurality of light emitting elements 12, a color filter 16 provided on the protective layer 15, a filling resin layer 17 provided on the color filter 16, and an opposing substrate (second substrate) 18 provided on the filling resin layer 17. Note that the opposing substrate 18 side is the top side, and the substrate 11 side is the bottom side.

[0087] A plurality of light emitting elements 12 are arranged in a matrix on one main surface of the substrate 11. The light emitting elements 12 are white organic EL light emitting elements, and as a colorization method in the display device 10, a method using white organic EL light emitting elements and a color filter 16 is used. Note that the colorization method is not limited to this, and an RGB colorization method or the like may be used. In addition, a monochrome filter may be used.

[0088] For example, the light emitting element 12 has a first electrode 12A as an anode, an organic layer 12B, and a second electrode 12C as a cathode, and the first electrode 12A, the organic layer 12B, and the second electrode 12C are sequentially loaded from the substrate 11 side, for example.

[0089] The substrate 11 is a support member that supports a plurality of light emitting elements 12 arranged on one main surface. In addition, although not shown, the substrate 11 may be provided with a drive circuit including a sampling transistor and a drive transistor for controlling the drive of the plurality of light emitting elements 12, and a power supply circuit for supplying power to the plurality of light emitting elements 12.

[0090] The substrate 11 may be configured using, for example, glass or resin having low water permeability and oxygen permeability, or may be configured using a semiconductor such as a transistor that can be easily formed. Specifically, the substrate 11 may be a glass substrate (such as high strain point glass, soda glass, borosilicate glass, forsterite, lead glass, or quartz glass), a semiconductor substrate (such as amorphous silicon or polycrystalline silicon), or a resin substrate (such as polymethyl methacrylate, polyvinyl alcohol, polyvinyl phenol, polyether sulfone, polyimide, polycarbonate, polyethylene terephthalate, or polyethylene naphthalate).

[0091] The contact plug 11A is provided in the substrate 11. The contact plug 11A electrically connects the first electrode 12A to a drive circuit, a power circuit, etc. Specifically, the contact plug 11A electrically connects the first electrode 12A to a drive circuit, a power circuit, etc. (not shown) provided inside the substrate 11, and applies power for causing the light emitting element 12 to emit light to the first electrode 12A. The contact plug 11A can be formed using a single substance or alloy of a metal (such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), tungsten (W), titanium (Ti), tantalum (Ta), aluminum (Al), iron (Fe), or silver (Ag), etc.), or a plurality of stacked metal films of the foregoing metals.

[0092] (First Electrode)

[0093] The first electrode 12A is electrically separated for each sub-pixel 100R, 100G and 100B. The first electrode 12A is also used as a reflective layer, and it is advantageous to use a metal layer with as high a reflectivity as possible and a large work function to configure the first electrode 12A so as to improve the luminous efficiency. As a configuration material of the metal layer, for example, a metal element (such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag)) can be used. At least one of the single substance or alloy. Specific examples of alloys include AlNi alloys and AlCu alloys. The first electrode 12A can be configured using a stacked film of multiple metal layers containing a single substance or alloy of at least one of the above-mentioned metal elements.

[0094] (Second Electrode)

[0095] The second electrode 12C is set to be an electrode common to all sub-pixels 100R, 100G and 100B in the display area 110A. The second electrode 12C is a transparent electrode that is transparent to the light generated in the organic layer 12B. Here, it is assumed that the transparent electrode includes a semi-transmissive reflective film. The second electrode 12C is configured using, for example, a metal or a metal oxide. As a metal, for example, at least one of a simple substance and an alloy of metal elements such as aluminum (Al), magnesium (Mg), calcium (Ca) and sodium (Na) can be used. As an alloy, for example, an alloy (MgAg alloy) of magnesium (Mg) and silver (Ag) or an alloy (AlLi alloy) of aluminum (Al) and lithium (Li) is suitable. As a metal oxide, for example, a mixture (ITO) of indium oxide and tin oxide, a mixture (IZO) of indium oxide and zinc oxide, or zinc oxide (ZnO) can be used.

[0096] (Insulation layer)

[0097] The insulating layer 13 is used to electrically separate the first electrode 12A for each of the sub-pixels 100R, 100G, and 100B. The insulating layer 13 is disposed between the first electrodes 12A and covers the peripheral edge portion of the first electrode 12A. More specifically, the insulating layer 13 has an opening in a portion corresponding to each first electrode 12A, and covers the peripheral edge portion of the upper surface (surface facing the second electrode 12C) of the first electrode 12A to the side surface (end face) of the first electrode 12A. The first interface layer 14 is disposed at the interface between the first electrode 12A and the insulating layer 13.

[0098] The insulating layer 13 includes a bulk layer 13A serving as a main body of the insulating layer and a second interface layer 13B provided at an interface between the bulk layer 13A and the organic layer 12B.

[0099] (Block layer)

[0100] Bulk layer 13A is advantageously positively charged. Since bulk layer 13A is positively charged, leakage of hole current generated between adjacent light emitting elements 12 can be suppressed.

[0101] The bulk layer 13A contains a silicon compound as a main component. Here, the main component refers to a material component contained in the bulk layer 13A in the largest proportion. For example, the silicon compound includes at least one type selected from the group consisting of silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ) and silicon carbide (SiC x ). Among these materials, at least one of silicon nitride or silicon oxynitride is favorably used. This is because the bulk layer 13A tends to have a positive fixed charge by containing at least one type of silicon nitride or silicon oxynitride.

[0102] The bulk layer 13A may also contain hydrogen (H). For example, in the case where the bulk layer 13A is formed by reacting a Si-containing gas (e.g., SiH4) with a N-containing gas (e.g., NH2 or NH3) by chemical vapor deposition (CVD) or the like, the bulk layer 13A generally contains hydrogen included in the material gas.

[0103] In the case where the bulk layer 13A contains silicon nitride as the main component of the silicon compound, hydrogen may be bonded to silicon and nitrogen. In this case, the peak intensity I resulting from the NH bond obtained by analyzing the bulk layer 13A by Fourier transform infrared spectrometer (FT-IR) is N-H With S i -H bond peak intensity I Si-H The peak intensity ratio (I N-H / I Si-H) is advantageously less than 4, more advantageously 3 or less than 3. When the peak intensity ratio (I N-H / I Si-H ) is less than 4, the dipole formed at the interface with the first interface layer 14 can be increased. Therefore, the fixed charge of the insulating layer 13 can be increased, and the insulating layer 13 can be effectively positively charged. Therefore, the hole current leakage generated between adjacent light-emitting elements 12 can be further suppressed.

[0104] The above peak intensity ratio (I N-H / I Si-H ) is obtained as follows. First, the counter substrate 18 is peeled off from the display device 10, and then each layer stacked on the bulk layer 13A is peeled off to expose the surface of the bulk layer 13A. Next, the bulk layer 13A is analyzed by FT-IR to obtain an FT-IR spectrum. Then, the peak intensity ratio (I) above is obtained using the obtained FT-IR spectrum. N-H / I Si-H ).

[0105] (Second interface layer)

[0106] The second interface layer 13B is used to suppress the hole current leakage and the electron current leakage generated between the adjacent light-emitting elements 12. The second interface layer 13B has a lattice strain, and thus exhibits the above-mentioned function of suppressing the hole current leakage and the electron current leakage. Here, the "lattice strain" is assumed to be the lattice strain of the tiny grains contained in the second interface layer 13B. In this specification, the term "hole current leakage" refers to a phenomenon in which holes injected from the first electrode 12A as an anode flow into the adjacent first electrode 12A through the interface between the insulating layer 13 and the organic layer 12B. In addition, the term "electron current leakage" refers to a phenomenon in which electrons injected from the second electrode 12C as a cathode flow into the adjacent first electrode 12A through the organic layer 12B, or electrons formed in a charge generation layer (e.g., a hole injection layer) included in the organic layer 12B flow through the organic layer 12B.

[0107] The second interface layer 13B has a composition different from that of the bulk layer 13A. Specifically, the second interface layer 13B includes silicon oxide. The second interface layer 13B may also include nitrogen (N). In this case, the nitrogen may form a bond with the silicon in the second interface layer 13B and may exist as silicon nitride or silicon oxynitride. Since the second interface layer 13B includes nitrogen, the second interface layer 13B may generate lattice strain, and the above-mentioned function of suppressing hole current leakage and electron current leakage may be further improved.

[0108] From the viewpoint of improving the function of suppressing hole current leakage and electron current leakage, the second interface layer 13B advantageously covers the edge (end face) of the bulk layer 13A and the main surface of the bulk layer 13A. Moreover, from the viewpoint of improving the function of suppressing hole current leakage and electron current leakage, the second interface layer 13B advantageously has a substantially uniform thickness throughout the layer. The upper limit value of the average thickness of the second interface layer 13B is advantageously 10 nm or less. When the average thickness of the second interface layer 13B is 10 nm or less, the relaxation of the lattice strain of the second interface layer 13B can be suppressed. By suppressing the relaxation of the lattice strain in this way, the degradation of the function of suppressing hole current leakage and electron current leakage can be suppressed. The lower limit value of the average thickness of the second interface layer 13B is advantageously 2 nm or more. When the average thickness of the second interface layer 13B is 2 nm or more, the above-mentioned function of suppressing hole current leakage and electron current leakage can be effectively exhibited. Note that the average thickness of the second interface layer 13B is obtained similarly to the average thickness of the first interface layer 14 to be described below.

[0109] In the case where the bulk layer 13A includes silicon nitride, the ratio of silicon oxide in the second interface layer 13B to the total amount of silicon oxide and silicon nitride is advantageously 80% or more. When the above ratio is 80% or more, due to the composition difference between the bulk layer 13A and the second interface layer 13B, lattice strain can be effectively generated in the second interface layer 13B. Therefore, the function of suppressing hole current leakage and electron current leakage can be further improved.

[0110] The ratio of silicon oxide to the total amount of silicon oxide and silicon nitride is determined as follows. First, a cross section of the display device 10 is cut by a FIB method or the like to prepare a thin slice. Next, the cross section of the thin slice is analyzed by electron energy loss spectroscopy (EELS) to determine the silicon oxide and silicon nitride content in the second interface layer 13B. Then, using this content, the ratio of silicon oxide to the total amount of silicon oxide and silicon nitride is calculated.

[0111] (First interface layer)

[0112] The first interface layer 14 is used to suppress the exchange of elements of the films constituting the first electrode 12A and the insulating layer 13, for example, the exchange of oxygen, and to suppress the degradation of the characteristics of the insulating layer 13. Specifically, for example, the first interface layer 14 is used to suppress the reduction of the fixed charge of the bulk layer 13A and maintain the positive charge state of the insulating layer 13 (specifically, the bulk layer 13A).

[0113] The first interface layer 14 has a composition different from that of the bulk layer 13A. Specifically, the first interface layer 14 contains silicon oxide. From the viewpoint of suppressing hole current leakage between adjacent light-emitting elements 12, the average thickness of the first interface layer 14 is advantageously 1 to 15 nm, excluding 15 nm, more advantageously from 1 to 13 nm, inclusive, even more advantageously from 1 to 9 nm, inclusive, particularly advantageously from 1 to 7 nm, inclusive, or most advantageously from 1 to 5 nm, inclusive.

[0114] The average thickness of the first interface layer 14 is obtained as follows. First, a cross section of the display device 10 is cut by a low-temperature focused ion beam (FIB) process or the like to produce a thin slice. Next, the prepared thin slice is observed with a transmission electron microscope (TEM), and a cross-sectional TEM image is obtained. At this time, the acceleration voltage is set to 80 kV. Next, in the obtained cross-sectional TEM image, a portion ( Figure 3 The thickness of the portion of region R in the first interface layer 14 is measured, which covers the first electrode 12A. At this time, each measurement position should be randomly selected from the portion covering the first electrode 12A. Then, the film thickness of the first interface layer 14 measured at 10 points or more is simply averaged (arithmetic mean) to obtain the average thickness of the first interface layer 14.

[0115] (Organic layer)

[0116] The organic layer 12B is provided as an organic layer common to all the sub-pixels 100R, 100G, and 100B in the display region 110A. Figure 4 It is shown Figure 2 . The organic layer 12B has a configuration in which a hole injection layer 12B1, a hole transport layer 12B2, a light emitting layer 12B3, and an electron transport layer 12B4 are stacked in this order from the first electrode 12A side. Note that the configuration of the organic layer 12B is not limited to this configuration, and layers other than the light emitting layer 12B3 are provided as needed.

[0117] The hole injection layer 12B1 is a buffer layer for improving the hole injection efficiency to the light-emitting layer 12B3 and for suppressing leakage. The hole transport layer 12B2 is used to improve the hole transport efficiency to the light-emitting layer 12B3. The light-emitting layer 12B3 is applied with an electric field to recombine electrons and holes to generate light. The electron transport layer 12B4 is used to improve the electron transport efficiency to the light-emitting layer 12B3. An electron injection layer (not shown) may be provided between the electron transport layer 12B4 and the second electrode 12C. The electron injection layer is used to improve the electron injection efficiency.

[0118] (Protective layer)

[0119] The protective layer 15 serves to shield the light emitting element 12 from the outside air and to suppress water from the outside environment from penetrating into the light emitting element 12. Furthermore, in the case where the second electrode 12C is configured using a metal layer, the protective layer 15 also has a function of suppressing oxidation of the metal layer.

[0120] The protective layer 15 is made of, for example, an inorganic material having low hygroscopicity (such as silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiN x O y ), titanium oxide (TiO x ), or aluminum oxide (Al x O y )) is configured. In addition, the protective layer 15 may have a single-layer structure, but may have a multi-layer structure in the case of increasing the thickness. This is to release the internal stress in the protective layer 15. In addition, the protective layer 15 may be configured using a polymer resin. In this case, as the polymer resin, at least one resin material of a thermosetting resin or an ultraviolet curing resin may be used.

[0121] (Color filter)

[0122] The color filter 16 is a so-called on-chip filter (OCCF). The color filter 16 includes, for example, a red filter 16R, a green filter 16G, and a blue filter 16B. The red filter 16R, the green filter 16G, and the blue filter 16B are respectively arranged to face the light-emitting element 12 of the sub-pixel 100R, the light-emitting element 12 of the sub-pixel 100G, and the light-emitting element 12 of the sub-pixel 100B. As a result, the white light emitted from the light-emitting element 12 in the sub-pixel 100R, the sub-pixel 100G, and the sub-pixel 100B is respectively transmitted through the above-mentioned red filter 16R, the green filter 16G, and the blue filter 16B, so that red light, green light, and blue light are emitted from the display surface, respectively. In addition, a light-shielding layer 16BM is arranged between the color filters of the colors, that is, in the area between the sub-pixels 100.

[0123] (Filling resin layer)

[0124] The filling resin layer 17 is filled in the space between the protective layer 15 and the color filter 16. The filling resin layer 17 has a function as an adhesive layer for bonding the color filter 16 to the counter substrate 18. The filling resin layer 17 is configured using at least one resin material of a thermosetting resin or an ultraviolet curing resin.

[0125] (Opposing substrate)

[0126] The counter substrate 18 is disposed so that one main surface of the counter substrate 18 and one main surface of the substrate 11 provided with a plurality of light emitting elements 12 face each other. The counter substrate 18 seals the light emitting elements 12, the color filter 16, etc. together with the filling resin layer 17. The counter substrate 18 is configured using a material transparent to the various color lights emitted from the color filter 16, such as glass.

[0127] [1-2 Method for manufacturing display device]

[0128] Hereinafter, a method of manufacturing the display device 10 having the above-described configuration is described.

[0129] First, a drive circuit and the like are formed on one main surface of the substrate 11 using, for example, a thin film forming technique, a photolithography technique, and an etching technique. Next, a metal layer is formed on the drive circuit and the like by, for example, a sputtering method, and then the metal layer is patterned using, for example, a photolithography technique and an etching technique, thereby forming a plurality of first electrodes 12A that are separated from each other for each light emitting element 12 (that is, for each sub-pixel 100).

[0130] Next, a first interface layer 14 is formed on one main surface of the substrate 11, on which a plurality of first electrodes 12A have been formed by, for example, a CVD method, and then a bulk layer 13A is formed by, for example, a CVD method. The first interface layer 14 and the bulk layer 13A are then patterned using photolithography and etching techniques. Then, the surface of the bulk layer 13A is plasma-treated to form a second interface layer 13B, or the second interface layer 13B is formed on the bulk layer 13A by an atomic layer deposition (ALD) method. As a result, an insulating layer 13 is obtained. As a plasma treatment, for example, oxygen plasma treatment or nitrogen plasma treatment can be used. Note that these plasma treatments can be used alone or in combination.

[0131] In the case where the second interface layer 13B is formed on the bulk layer 13A by the ALD method, the second interface layer 13B is also formed on the first electrode 12A, but since the adhesion efficiency of the precursor is different between the surface of the first electrode 12A including the metal material and the surface of the bulk layer 13A including the silicon compound such as silicon nitride, the second interface layer 13B is hardly formed on the first electrode 12A. Therefore, the second interface layer 13B formed on the first electrode 12A does not substantially affect the driving of the light emitting element 12. However, for the purpose of a higher quality structure, the second interface layer 13B formed on the first electrode 12A may be removed by using a photolithography technique and an etching technique.

[0132] Next, for example, a hole injection layer 12B1, a hole transport layer 12B2, a light emitting layer 12B3, and an electron transport layer 12B4 are sequentially stacked on the first electrode 12A and the insulating layer 13 by a vapor deposition method to form an organic layer 12B. Next, a second electrode 12C is formed on the organic layer 12B by, for example, a sputtering method. As a result, a plurality of light emitting elements 12 are formed on one main surface of the substrate 11.

[0133] Next, a protective layer 15 is formed on the second electrode 12C by, for example, a vapor deposition method or a CVD method, and then a color filter 16 is formed on the protective layer 15. Note that in order to flatten the steps of the protective layer 15 and the steps caused by the difference in the film thickness of the color filter 16 itself, a flat layer may be formed on the upper side, the lower side, or both the upper side and the lower side of the color filter 16. Next, for example, the color filter 16 is covered with a filling resin layer 17 by a one-drop filling (ODF) method, and then the counter substrate 18 is placed on the filling resin layer 17. Next, for example, by applying heat to the filling resin layer 17 or irradiating the filling resin layer 17 with ultraviolet rays to cure the filling resin layer 17, the substrate 11 and the counter substrate 18 are bonded together via the filling resin layer 17. As a result, the display device 10 is sealed. Note that in the case where the filling resin layer 17 contains both a thermosetting resin and an ultraviolet curing resin, the filling resin layer 17 is irradiated with ultraviolet rays to be temporarily cured, and then heat is applied to the filling resin layer 17 to complete the curing.

[0134] [1-3 Effect]

[0135] As described above, the display device 10 according to the first embodiment includes: a plurality of first electrodes 12A, each of which is provided for each sub-pixel 100; an insulating layer 13, including a silicon compound, provided between the first electrodes 12A, and covering the outer peripheral edge portion of the first electrode 12A; a first interface layer 14, including silicon oxide and provided at the interface between the first electrode 12A and the insulating layer 13; an organic layer 12B, including a light-emitting layer 12B3, and provided on the first electrode 12A and the insulating layer 13, common to all pixels; and a second electrode 12C, provided on the organic layer 12B. In addition, the insulating layer 13 includes a bulk layer 13A, including a silicon compound as a main component; and a second interface layer 13B, including silicon oxide and provided at the interface between the bulk layer 13A and the organic layer 12B. Therefore, the hole current and the electron current transmitted through the interface between the organic layer 12B and the insulating layer 13 can be suppressed. Therefore, the reduction of the current luminous efficiency and the abnormality of the luminous color of the display device 10 can be suppressed.

[0136] [1-4 Modification Example]

[0137] (Variant 1)

[0138] Figure 5 An example of the configuration of a display device 101 according to a modification 1 of the first embodiment of the present disclosure is shown. The display device 101 is different from the display device 10 according to the first embodiment in that it includes an insulating layer 131 instead of the insulating layer 13. The insulating layer 131 includes a bulk layer 13A, a second interface layer 13B, and an intermediate layer 13C provided between the bulk layer 13A and the second interface layer 13B.

[0139] The intermediate layer 13C is a layer for promoting the formation of fixed charges in the bulk layer 13A. The intermediate layer 13C advantageously contains silicon fluoride (SiFx) to have a charge bias. Note that, for example, whether the intermediate layer 13C contains silicon fluoride can be confirmed by analyzing the interface between the bulk layer 13A and the second interface layer 13B using X-ray photoelectron spectroscopy (XPS).

[0140] (Variant 2)

[0141] Figure 6 An example of the configuration of a display device 102 according to variant example 2 of the first embodiment of the present disclosure is shown. The display device 102 is different from the display device 10 according to the first embodiment in that it includes an insulating layer 132 instead of the insulating layer 13. The insulating layer 132 includes a bulk layer 13A and a second interface layer 13D having a two-layer structure provided on the bulk layer 13A.

[0142] The second interface layer 13D includes a first layer 13D1 and a second layer 13D2 disposed on the first layer 13D1. The first layer 13D1 includes, for example, silicon oxide. For example, the second layer 13D2 includes at least one type of silicon oxynitride or silicon nitride. Note that the stacking order of the first layer 13D1 and the second layer 13D2 may be reversed.

[0143] As described above, since the display device 102 includes the second interface layer 13D having a two-layer structure, in the first embodiment, the lattice strain of the second interface layer 13D can be made greater than the lattice strain of the second interface layer 13B having a single-layer structure. Therefore, the function of suppressing hole current leakage and electron current leakage can be further improved.

[0144] In the above example, the case where the second interface layer 13D has a two-layer structure has been described, but the second interface layer 13D may have a stacked structure of two or more layers. In this case, at least one of the two or more layers may contain silicon oxide. In addition, at least one of the two or more layers may contain at least one type of silicon oxynitride or silicon nitride. Even in the case of a stacked structure of two or more layers, the function of suppressing hole current leakage and electron current leakage can be further improved.

[0145] (Variant 3)

[0146] Figure 7 An example of a configuration of a display device 103 according to Modification 3 of the first embodiment of the present disclosure is shown. The display device 103 is different from the display device 10 according to the first embodiment in that an insulating layer 133 is included instead of the insulating layer 13 .

[0147] The insulating layer 133 includes a bulk layer 13A and a second interface layer 13E disposed on the bulk layer 13A. A side wall portion 13E1 of the second interface layer 13E, which covers the edge (end face) of the bulk layer 13A, has a different composition from a main surface portion 13E2 of the second interface layer 13E, which covers the main surface of the bulk layer 13A. In this specification, the term "different composition" means that the configuration composition is different, or the configuration composition is the same but the proportion of the configuration composition is different.

[0148] The side wall portion 13E1 and the main surface portion 13E2 contain, for example, silicon oxide or silicon oxynitride having different compositions. The side wall portion 13E1 advantageously has a positive fixed charge and advantageously carries a positive charge. It is possible to suppress holes from flowing from the first electrode 12A through the edge of the insulating layer 133 into the upper surface of the insulating layer 133. Therefore, it is possible to further suppress hole current leakage.

[0149] The configuration material of the side wall portion 13E1 for providing positive fixed charges includes, for example, at least one type selected from the group consisting of germanium oxide (GeO2), yttrium oxide (Y2O3), lutetium oxide (Lu2O3), lanthanum oxide (La2O3) and strontium oxide (SrO).

[0150] For example, the second interface layer 13E having the above configuration is formed as follows. After forming the first interface layer 14, an insulating layer containing a silicon compound as a main component is formed by a plasma CVD method. At this time, the flow rate ratio of the gas is adjusted to form a silicon oxide film on the surface portion of the insulating layer. Subsequently, after patterning the insulating layer using a photolithography technique and an etching technique, a silicon oxide film is formed only on the sidewall portion by, for example, oblique deposition.

[0151] (Variant 4)

[0152] Figure 8 An example of the configuration of a display device 104 according to Modification 4 of the first embodiment of the present disclosure is shown. The display device 104 is different from the display device 10 according to the first embodiment in including a single-layer insulating layer 134 instead of the insulating layer 13 including the bulk layer 13A and the second interface layer 13B.

[0153] The insulating layer 134 contains a silicon compound as a main component in the bulk and contains silicon oxide in the surface portion on the organic layer 12B side. Here, the "main component" refers to a material component contained in the insulating layer 134 in the largest proportion. The silicon compound is similar to the silicon compound contained in the bulk layer 13A in the first embodiment.

[0154] For example, the composition of the insulating layer 134 changes continuously from the bulk toward the outermost surface on the organic layer 12B side. Specifically, the oxygen concentration of the insulating layer 134 (more specifically, the concentration of silicon oxide in the insulating layer 134) gradually increases from the bulk toward the outermost surface on the organic layer 12B side. The composition of the insulating layer 134 can change continuously from the bulk toward the surface on the edge side. In this case, the function of suppressing hole current leakage and electron current leakage can be further improved.

[0155] Silicon oxide is favorably contained within a range of 10 nm or less from the outermost surface on the organic layer 12B side to the depth of the insulating layer 134. This is because lattice strain can be increased in the surface portion on the organic layer 12B side by changing the concentration of silicon oxide within a narrow range.

[0156] The insulating layer 134 may further contain nitrogen in the surface portion on the organic layer 12B side. In this case, the nitrogen may form a bond with silicon in the surface portion on the organic layer 12B side, and may exist as silicon nitride or silicon nitride oxide. Since the surface portion on the organic layer 12B side further contains nitrogen, the surface portion on the organic layer 12B side may generate lattice strain, and the function of suppressing hole current leakage and electron current leakage may be further improved.

[0157] In the case where the insulating layer 134 contains silicon nitride as a main component in the bulk, the ratio of silicon oxide to the total amount of silicon oxide and silicon nitride in the surface portion on the organic layer 12B side is advantageously 80% or more. When the above ratio is 80% or more, due to the difference in composition between the bulk of the insulating layer 13 and the surface portion on the organic layer 12B side, lattice strain can be effectively generated in the surface portion on the organic layer 12B side. Therefore, the function of suppressing hole current leakage and electron current leakage can be further improved. The above ratio in the surface portion on the organic layer 12B side is obtained similarly to the ratio of silicon oxide to the total amount of silicon oxide and silicon nitride in the second interface layer 13B of the first embodiment.

[0158] Note that it is more advantageous to adopt a configuration having a second interface layer 13B provided on the surface of the bulk layer 13A as in the first embodiment than to adopt a configuration in which the composition of the insulating layer 134 is continuously changed as described above. This is because providing the second interface layer 13B promotes lattice strain on the surface of the insulating layer 13 on the organic layer 12B side, and the leakage suppression effect can be further improved.

[0159] (Variant 5)

[0160] Fig. 9 An example of a configuration of a display device 105 according to Modification 5 of the first embodiment of the present disclosure is shown. The display device 105 is different from the display device 10 according to the first embodiment in including a first electrode 12D having a stacked structure instead of the first electrode 12A having a single layer structure.

[0161] The first electrode 12D includes a metal layer 12D1 and an oxide conductive layer 12D2 having transparency and disposed on the metal layer 12D1. The metal layer 12D1 is similar to the metal layer used as the first electrode 12A in the first embodiment. The oxide conductive layer 12D2 advantageously includes at least one type of metal oxide selected from the group consisting of: a mixture of indium oxide and tin oxide (ITO), a mixture of indium oxide and zinc oxide (IZO), and a mixture of indium oxide, gallium oxide and zinc oxide (IGZO). This is because these metal oxides have a high work function and can therefore improve hole injection performance.

[0162] The first interface layer 14 is particularly effective in the display device 105 including the first electrode 12D having the above configuration. When the oxide conductive layer 12D2 and the insulating layer 13 (specifically, the bulk layer 13A) are adjacent to each other, the exchange of elements (e.g., oxygen) constituting these layers is particularly likely to occur. For this reason, in the case where the first interface layer 14 is provided, the effect of suppressing the exchange of elements constituting the film between the oxide conductive layer 12D2 and the insulating layer 13 is significantly exhibited.

[0163] <2 Second Embodiment>

[0164] [2-1 Configuration of display device]

[0165] Fig.10 is a cross-sectional view showing an example of the configuration of a display device 20 according to the second embodiment of the present disclosure. Fig.11 It is shown Fig.10 2 is an enlarged cross-sectional view of a portion of a display device 20 shown in FIG. The display device 20 is different from the display device 10 according to the first embodiment in that an insulating layer 23 and a first interface layer 24 are included instead of the insulating layer 13 and the first interface layer 14 .

[0166] (Insulation layer)

[0167] The insulating layer 23 is used to electrically separate the first electrode 12A of each sub-pixel 100R, 100G and 100B. The insulating layer 23 is provided between the side surfaces of the first electrodes 12A adjacent in the in-plane direction of the substrate 11. The upper surface of the insulating layer 23 is flat. In this specification, the "upper surface" refers to the surface on the display surface side of the display device 20.

[0168] The insulating layer 23 includes a bulk layer 23A serving as a body of the insulating layer and a second interface layer 23B provided at an interface between the bulk layer 23A and the organic layer 12B. In the second embodiment, a case where the insulating layer 23 includes the second interface layer 23B will be described, but the insulating layer 23 does not necessarily include the second interface layer 23B.

[0169] The bulk layer 23A is similar to the bulk layer 13A in the first embodiment, except that the bulk layer 23A is disposed between the side surfaces of the first electrodes 12A adjacent in the in-plane direction of the substrate 11 without covering the peripheral edge portion of the first electrode 12A. The second interface layer 23B is similar to the second interface layer 13B in the first embodiment, except that the second interface layer 23B is disposed on the upper surface of the bulk layer 23A.

[0170] (First interface layer)

[0171] The first interface layer 24 is provided between the side surface of the insulating layer 23 and the side surface of the first electrode 12A. The upper surface of the first interface layer 24 is flat. In the first interface layer 24, the configuration other than the above is similar to that of the first interface layer 14 in the first embodiment.

[0172] (Organic layer)

[0173] The thickness of the organic layer 12B on the first electrode 12A is substantially constant. That is, the upper surface of the organic layer 12B on the first electrode 12A is substantially flat. Therefore, vertical leakage between the first electrode 12A and the second electrode 12C (specifically, a portion of the second electrode 12C corresponding to the upper portion of the first electrode 12A) can be suppressed (see Fig.11 In contrast, Fig.12 As shown, in the display device 20A in which the recessed portion 12BA is formed in a portion of the upper surface of the organic layer 12B, which portion corresponds to the outer peripheral edge portion of the first electrode 12A, and the thickness of the organic layer 12B on the first electrode 12A is not substantially constant (i.e., the upper surface of the organic layer 12B on the first electrode 12A is not substantially flat), the electric field is concentrated to the portion between the first electrode 12A and the second electrode 12C. Therefore, the vertical leakage (see FIG. 1 ) between the first electrode 12A and the second electrode 12C (specifically, a portion of the second electrode 12C, which portion corresponds to the upper portion of the first electrode 12A) is reduced. Fig.11 In this specification, the term "vertical leakage" refers to hole current leakage and electron current leakage between the first electrode 12A and the second electrode 12C in the thickness direction of the organic layer 12B.

[0174] In this specification, “the thickness of the organic layer 12B on the first electrode 12A is substantially flat” means that the variation in the thickness of the organic layer 12B on the first electrode 12A is within ±5% of the average thickness of the organic layer 12B on the first electrode 12A. In addition, “the upper surface of the organic layer 12B is substantially flat” means that the displacement of the upper surface of the organic layer 12B (displacement in the thickness direction of the organic layer 12B) is within ±5% of the average thickness of the organic layer 12B. Note that the thickness and average thickness of the organic layer 12B are obtained similarly to the thickness and average thickness of the first interface layer 14 in the first embodiment.

[0175] (Relationship between layer heights)

[0176] The height H1 of the organic layer 12B on the first electrode 12A and the height H2 of the organic layer 12B in the portion surrounding the first electrode 12A satisfy the relationship H1≤H2. Thus, it is possible to suppress the electric field from concentrating on the portion between the first electrode 12A and the second electrode 12C. Therefore, it is possible to suppress vertical leakage between the first electrode 12A and the second electrode 12C (specifically, a portion of the second electrode 12C corresponding to the portion surrounding the first electrode 12A) (see Fig.11 In contrast, Fig.13 As shown, in the display device 20B in which the height H1 of the organic layer 12B on the first electrode 12A and the height H2 of the organic layer 12B in the portion around the first electrode 12A do not satisfy the relationship H1≤H2, the electric field is concentrated to the portion between the first electrode 12A and the second electrode 12C. Therefore, the vertical leakage between the first electrode 12A and the second electrode 12C (specifically, a portion of the second electrode 12C corresponding to the portion around the first electrode 12A) becomes larger (see Fig.13 In the present specification, “a portion around the first electrode 12A” refers to a range of 50 nm or less from the side surface of the first electrode 12A.

[0177] The height H1 of the organic layer 12B on the first electrode 12A and the height H2 of the organic layer 12B on the first interface layer 24 21 and the height H of the organic layer in the portion around the first electrode 12A 22 The relationship H1≤H can be satisfied 21 ≤H 22 Even in this case, vertical leakage can be suppressed (see Fig.11 The arrow I2 in the figure).

[0178] Fig.11 An example is shown in which the height H1 of the organic layer 12B on the first electrode 12A and the height H2 of the organic layer 12B in the portion around the first electrode 12A satisfy the relationship H1 = H2. Fig.14 An example is shown in which the height H1 of the organic layer 12B on the first electrode 12A and the height H2 of the organic layer 12B in the portion around the first electrode 12A satisfy the relationship H1 < H2.

[0179] The height h1 of the first electrode 12A, the height h2 of the first interface layer 24, and the height h3 of the insulating layer 23 advantageously satisfy the relationship h1 ≤ h2 ≤ h3. When the above relationship is satisfied, in the case where the organic layer 12B is formed on the first electrode 12A, the first interface layer 24, and the insulating layer 23 by a CVD method or the like, an organic layer 12B can be obtained, in which the height H1 of the organic layer 12B on the first electrode 12A and the height H2 of the organic layer 12B in the portion around the first electrode 12A satisfy the relationship H1 ≤ H2. Therefore, as described above, vertical leakage can be suppressed.

[0180] Fig.11 An example is shown in which the height h1 of the first electrode 12A, the height h2 of the first interface layer 24, and the height h3 of the insulating layer 23 satisfy the relationship h1 = h2 = h3. Fig.12 An example is shown in which the height h1 of the first electrode 12A, the height h2 of the first interface layer 24, and the height h3 of the insulating layer 23 satisfy the relationship h1 < h2 = h3. Fig.14 An example is shown in which the height h1 of the first electrode 12A, the height h2 of the first interface layer 24, and the height h3 of the insulating layer 23 satisfy the relationship h1 = h2 < h3.

[0181] [Manufacturing method of the 2-2 display device]

[0182] Hereinafter, a manufacturing method of the display device 20 having the above configuration will be described.

[0183] First, as Fig.15 shown in A of, a substrate 11 including a driving circuit or the like is formed using, for example, thin film formation technology, lithography technology, and etching technology. Next, as Fig.15 shown in B of, for example, an electrode layer 12A1 such as a metal layer or a metal oxide layer is formed on the substrate 11 by sputtering, and then the electrode layer 12A1 is patterned by, for example, lithography technology and etching technology, thereby forming a plurality of separate first electrodes 12A for each light-emitting element 12 (i.e., for each sub-pixel 100), as Fig.15 shown in C of.

[0184] Next, for example, as Fig.15As shown in FIG. 2 , a first interface layer 24 is formed on one main surface of the substrate 11 on which a plurality of first electrodes 12A have been formed by a CVD method, and then the first interface layer 24 is removed by, for example, an etching method, while the first interface layer 24 remains on the side surface of the first electrode 12A, as shown in FIG. Fig.15 Then, for example, Fig.15 As shown in FIG. 1 , a bulk layer 23A is formed on one main surface of the substrate 11 by a CVD method to cover the first electrode 12A and the first interface layer 24. Fig.16 As shown in FIG. 1A, a photoresist layer 23A1 is formed on the bulk layer 23A by, for example, spin coating to make the surface flat. Next, the photoresist layer 23A1 is removed and part of the bulk layer 23A is removed, so that, for example, Fig.16 As shown in FIG. 1B , the first electrode 12A, the first interface layer 24 and the bulk layer 23A having substantially the same thickness are formed by an etch-back method.

[0185] Then, if Fig.16 As shown in FIG. 3C , the surface of the bulk layer 23A is plasma treated to form the second interface layer 23B, or the second interface layer 23B is formed on the upper surface of the bulk layer 23A by an atomic layer deposition (ALD) method. As a result, the insulating layer 23 is obtained.

[0186] Next, for example, a hole injection layer 12B1, a hole transport layer 12B2, a light emitting layer 12B3, and an electron transport layer 12B are sequentially stacked on the first electrode 12A and the insulating layer 23 by vapor deposition. 4， To form an organic layer 12B having a substantially flat upper surface, such as Fig.16 As shown in D.

[0187] The display device 20 can be obtained by performing other steps similar to the manufacturing method of the display device 10 in the first embodiment.

[0188] [2-3 Effect]

[0189] As described above, in the display device 20 according to the second embodiment, the thickness of the organic layer 12B on the first electrode 12A is substantially constant, and the height h1 of the organic layer 12B on the first electrode 12A and the height h2 of the organic layer 12B in the portion around the first electrode 12A satisfy the relationship h1≤h2. Thus, it is possible to suppress the electric field from concentrating on the portion between the first electrode 12A and the second electrode 12C. Therefore, it is possible to suppress the occurrence of vertical leakage due to electric field concentration (see Fig.11 Arrows I1 and I2 in the figure).

[0190] Furthermore, since the thickness of the organic layer 12B on the first electrode 12A is substantially constant, the occurrence of color shift due to a variation in the film thickness of the organic layer 12B (cavity shift) can be suppressed.

[0191] [2-4 Modification Example]

[0192] In the above-mentioned second embodiment, the case where the first interface layer 24 does not cover the peripheral edge portion of the upper surface of the first electrode 24A has been described. Fig.17 As shown, the first interface layer 24 may cover the outer peripheral edge portion of the upper surface of the first electrode 12A.

[0193] <3 Third Embodiment>

[0194] [3-1 Configuration of display device]

[0195] Fig.18 1 is an enlarged cross-sectional view showing a portion of a display device 30 according to a third embodiment of the present disclosure. The organic layer 12B has a plurality of convex portions 12CA on the upper surface. The plurality of convex portions 12CA are provided at portions corresponding to respective peripheral edge portions of the plurality of first electrodes 12A. The thickness of the organic layer 12B in the region within the convex portion 12CA is substantially constant.

[0196] The first interface layer 14 has a plurality of openings (first openings) 14H respectively provided above the plurality of first electrodes 12A. The insulating layer 13 has a plurality of openings (second openings) 13H respectively provided above the plurality of first electrodes 12A. The outer peripheral edge of the opening 14H is located inside the outer peripheral edge of the opening 13H. That is, the first interface layer 14 has a protrusion 14A protruding relative to the outer peripheral edge of the opening 13H of the insulating layer 13. For example, the thickness of the protrusion 14A is substantially uniform.

[0197] Since the outer peripheral edge of the opening 14H is located inside the outer peripheral edge of the opening 13H, in the case where the organic layer 12B is formed by the CVD method or the like, the portion inside the outer peripheral edge of the opening 13H is hidden behind the insulating layer 13 around the opening 13H, and the thickness of the organic layer 12B in the portion inside the convex portion 12CA can be suppressed from becoming thinner. That is, the formation of the concave portion 12CB (see FIG. 1 ) in the portion of the upper surface of the organic layer 12B (the portion inside the convex portion 12CA) can be suppressed. Fig.19 ). Therefore, vertical leakage due to electric field concentration can be suppressed (see Fig.18 The arrow I3).

[0198] In contrast, in the display device 30A in which the outer peripheral edge of the opening 14H is aligned with the outer peripheral edge of the opening 13H, in the case where the organic layer 12B is formed by a CVD method or the like, a portion inside the outer peripheral edge of the opening 12H is hidden behind the insulating layer 13 around the opening 13H, and the thickness of the organic layer 12B becomes thinner in the portion inside the convex portion 12CA. That is, the concave portion 12CB is formed in a portion of the upper surface of the organic layer 12B that is inside the convex portion 12CA. Therefore, vertical leakage due to electric field concentration (see Fig.19 The arrow I3) in the image becomes larger.

[0199] The aperture ratio of the insulating layer 13 is advantageously higher than the aperture ratio of the first interface layer 14. Therefore, the outer peripheral edge of the opening 14H can be located inside the outer peripheral edge of the opening 13H. The aperture ratio of the insulating layer 13 is the ratio of the total area of ​​the openings 13H of the insulating layer 13 to the area of ​​the formation region of the insulating layer 13. The aperture ratio of the first interface layer 14 is the ratio of the total area of ​​the openings 14H of the first interface layer 14 to the area of ​​the formation region of the first interface layer 14. In the third embodiment, the configuration other than the above is the same as that in the first embodiment.

[0200] [3-2 Method for manufacturing display device]

[0201] First, the process of forming the substrate 11 to the process of forming the first interface layer 14 are performed similarly to the second embodiment, and Fig. 20 As shown in FIG. 1A , a first interface layer 14 is formed on one main surface of a substrate 11 on which a plurality of first electrodes 12A have been formed.

[0202] Then, for example, Fig. 20 As shown in FIG. 1B , a bulk layer 13A is formed on the first interface layer 14 by a CVD method. Next, a photoresist layer 13A1 is formed on the bulk layer 13A by, for example, a spin coating method. Fig. 20 As shown in C, an opening is then formed in the portion of the photoresist layer 13A1 corresponding to the portion above the first electrode 12A. Next, for example, Fig.21 As shown in A, openings 14H and openings 13H are formed in portions of the first interface layer 14 and the bulk layer 13A by an etching method, and these portions correspond to the first electrode 12A. At this time, the etching rate between the first interface layer (e.g., SiO layer) and the bulk layer 13A (e.g., SiN layer) is adjusted using a deposition gas such as CH2F2, and etching is performed. Thus, openings 13H and openings 14H are formed so that the outer peripheral edge of opening 14H is located inside the outer peripheral edge of opening 13H.

[0203] Then, if Fig.21As shown in FIG. 1B , the surface of the bulk layer 13A is plasma treated to form the second interface layer 13B, or the second interface layer 13B is formed on the upper surface of the bulk layer 13A by an atomic layer deposition (ALD) method. As a result, the insulating layer 13 is obtained.

[0204] Next, for example, a hole injection layer 12B1, a hole transport layer 12B2, a light emitting layer 12B3, and an electron transport layer 12B4 are sequentially stacked on the first electrode 12A and the insulating layer 13 by a vapor deposition method. Fig.21 As shown in FIG. 3C , an organic layer 12B having a plurality of convex portions 12CA on the upper surface and having a substantially constant thickness in a region inside the convex portion 12CA is formed.

[0205] The display device 30 can be obtained by performing other steps similar to the manufacturing method of the display device 10 in the first embodiment.

[0206] [3-3 Effect]

[0207] As described above, in the display device 20 according to the third embodiment, the thickness of the organic layer 12B in the region inside the convex portion 12CA is substantially constant. Thus, it is possible to suppress the electric field from concentrating on the portion between the first electrode 12A and the second electrode 12C. Therefore, it is possible to suppress vertical leakage between the first electrode 12A and the second electrode 12C (see Fig.18 The arrow I3).

[0208] On the contrary, if Fig.19 As shown, in the display device 30A, in which the organic layer 12B has the concave portion 12CB within the convex portion 12CA, and the thickness of the organic layer 12B in the region inside the convex portion 12CA is not substantially constant, the electric field is concentrated to the portion between the first electrode 12A and the second electrode 12C. Therefore, it is difficult to suppress the vertical leakage between the first electrode 12A and the second electrode 12C (see Fig.19 The arrow I3).

[0209] [3-4 Modification Example]

[0210] In the third embodiment described above, the case where the thickness of the protrusion 14A is substantially uniform is described. Fig. 22 As shown, the protrusion 14A may be formed in a tapered shape in which the thickness increases as it moves away from the opening 14H.

[0211] <4 Fourth Embodiment>

[0212] [4-1 Configuration of display device]

[0213] Fig.23: is a cross-sectional view showing an example of the configuration of a display device 40 according to a fourth embodiment of the present disclosure. Fig.24 A is shown Fig.23 4 is an enlarged cross-sectional view of a portion of the display device 40 shown in FIG. The insulating layer 43 has a plurality of inclined surfaces 43C that protrude relative to the upper surface of the first electrode 12A and respectively surround the plurality of first electrodes 12A. The insulating layer 43 has an opening 43H in a portion corresponding to the bottom of the inclined surface 43C. The bottom of the insulating layer 43 covers the outer peripheral edge portion of the upper surface of the first electrode 12A to the side surface (end surface) of the first electrode 12A.

[0214] The thickness of the organic layer 12B on the first electrode 12A is substantially constant. The opening 43H is provided on the first electrode 12A. The peripheral edge of the opening 14H is located inside the peripheral edge of the opening 43H. That is, the first interface layer 14 has a protrusion 14A protruding relative to the peripheral edge of the opening 43H of the insulating layer 43. The thickness of the protrusion 14A is, for example, substantially uniform. The protrusion 14A may have a tapered shape in which the thickness increases as it moves away from the opening 14H.

[0215] Since the outer peripheral edge of the opening 14H is located inside the outer peripheral edge of the opening 43H, in the case where the organic layer 12B is formed by a CVD method or the like, since it is hidden behind the inclined surface 43C, the thickness of the organic layer 12B can be suppressed from becoming thinner in the portion inside the lower portion of the inclined surface 43C. Therefore, the thickness of the organic layer 12B on the first electrode 12A can be made substantially constant. Therefore, the occurrence of vertical leakage due to electric field concentration can be suppressed.

[0216] The opening ratio of the insulating layer 43 is advantageously higher than the opening ratio of the first interface layer 14. Therefore, the outer peripheral edge of the opening 43H can be located inside the outer peripheral edge of the opening 13H. The opening ratio of the insulating layer 43 is the ratio of the total area of ​​the opening 43H of the insulating layer 43 to the area of ​​the formation region of the insulating layer 43.

[0217] The insulating layer 43 includes a bulk layer 43A serving as a body of the insulating layer and a second interface layer 43B provided at an interface between the bulk layer 43A and the organic layer 12B. In the fourth embodiment, a case where the insulating layer 43 includes the second interface layer 43B will be described, but the insulating layer 43 does not necessarily include the second interface layer 43B.

[0218] The composition of the insulating layer 43 may be continuously changed from the bulk toward the outermost surface on one side of the organic layer 12B. Specifically, the oxygen concentration of the insulating layer 43 (more specifically, the concentration of silicon oxide in the insulating layer 43) may gradually increase from the bulk toward the outermost surface on one side of the organic layer 12B. The composition of the insulating layer 43 may be continuously changed from the bulk toward the surface on the edge side. In the fourth embodiment, the configuration other than the above is the same as that in the third embodiment.

[0219] [4-2 Effect]

[0220] In the fourth embodiment, the thickness of the organic layer 12B on the first electrode 12A is substantially constant. Thus, it is possible to suppress the electric field from concentrating on the portion between the first electrode 12A and the second electrode 12C. Therefore, it is possible to suppress vertical leakage between the first electrode 12A and the second electrode 12C.

[0221] In addition, the insulating layer 43 has a plurality of inclined surfaces 43C respectively around the plurality of first electrodes 12A. As a result, light emitted from the light emitting element 12 can be reflected by the inclined surfaces 43C toward the upper side of the first electrode 12A. Therefore, the brightness of the display device 40 can be improved.

[0222] [4-3 Modification Example]

[0223] In the above-described fourth embodiment, the case where the bottom portion of the insulating layer 43 covers the outer peripheral edge portion of the upper surface of the first electrode 12A is described, but Fig.24 As shown in FIG. 1B , the bottom of the insulating layer 43 may be disposed between the side surfaces of the first electrode 12A, and the bottom of the insulating layer 43 may not cover the peripheral edge portion of the upper surface of the first electrode 12A.

[0224] <5 Example of Resonator Structure Applicable to Embodiment>

[0225] A pixel for a display device according to the present disclosure described above may include a resonator structure that resonates light generated in a light emitting element. Hereinafter, the resonator structure will be described with reference to the accompanying drawings.

[0226] (Resonator Structure: First Example)

[0227] Fig.25 A is a schematic cross-sectional view for describing a first example of a resonator structure. In the following description, the light emitting elements 12 provided corresponding to the sub-pixels 100R, 100G, and 100B, respectively, may be referred to as the light emitting elements 12. R , 12 G and 12 B In addition, part of the organic layer 12B may be referred to as the organic layer 40 R , 40 G and 40B , which portions correspond to sub-pixels 100R, 100G, and 100B, respectively.

[0228] In the first example, the first electrode 12A is formed with a film thickness common to the light emitting element 12. The same applies to the second electrode 12C.

[0229] The reflector 71 is arranged under the first electrode 12A of the light emitting element 12 across the optical adjustment layer 72. A resonator structure that resonates light generated by the organic layer 12B is formed between the reflector 71 and the second electrode 12C. In the following description, the optical adjustment layers 72 respectively provided corresponding to the sub-pixels 100R, 100G, and 100B may be referred to as the optical adjustment layers 72. R , 72 G and 72 B .

[0230] The reflector 71 is formed with a film thickness common to the light emitting element 12. The film thickness of the optical adjustment layer 72 is different depending on the color to be displayed by the pixel. R , 72 G and 72 B The film thickness is different, so it is possible to set the optical distance that optimally resonates with the wavelength of light according to the color to be displayed.

[0231] In the example shown, the light emitting element 12 R , 12 G and 12 B As described above, since the film thickness of the optical adjustment layer 72 is different depending on the color to be displayed by the pixel, the position of the upper surface of the second electrode 12C is adjusted according to the light emitting element 12. R , 12 G and 12 B The type of

[0232] The reflector 71 may be formed using, for example, a metal such as aluminum (Al), silver (Ag), or copper (Cu) or an alloy containing the above metal as a main component.

[0233] The optical adjustment layer 72 may be made of an inorganic insulating material such as silicon nitride (SiN x ), silicon oxide (SiO x ), or silicon oxynitride (SiO x N y )) or an organic resin material (such as acrylic resin or polyimide resin). The optical adjustment layer 72 may be a single layer or a stacked film of a plurality of the above materials. In addition, the number of layers may vary depending on the type of the light emitting element 12.

[0234] The first electrode 12A may be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0235] The second electrode 12C needs to function as a semi-transmissive reflective film. The second electrode 12C can be formed using magnesium (Mg) or silver (Ag), or a magnesium-silver (MgAg) alloy containing magnesium (Mg) and silver (Ag) as main components, or an alloy containing an alkali metal or an alkaline earth metal.

[0236] (Resonator Structure: Second Example)

[0237] Fig.25 B is a schematic cross-sectional view for describing a second example of the resonator structure.

[0238] Also in the second example, the first electrode 12A and the second electrode 12C are formed with a film thickness common to the light emitting element 12 .

[0239] Then, also in the second example, the reflector 71 is arranged under the first electrode 12A of the light emitting element 12 across the optical adjustment layer 72. A resonator structure that resonates the light generated by the organic layer 12B is formed between the reflector 71 and the second electrode 12C. Similar to the first embodiment, the reflector 71 is formed with a common film thickness in the light emitting element 12, and the film thickness of the optical adjustment layer 72 is different depending on the color to be displayed by the pixel.

[0240] exist Fig.25 In the first example shown in A, the light emitting element 12 R , 12 G and 12 B The upper surfaces of the reflectors 71 in the embodiment are arranged to be aligned, and the position of the upper surface of the second electrode 12C is in accordance with the light emitting element 12 R , 12 G and 12 B The type of

[0241] On the contrary, Fig.25 In the second example shown in FIG. 1B , the upper surface of the second electrode 12C is arranged so as to be R , 12 G and 12 B To align the upper surface of the second electrode 12C, the light emitting element 12 R , 12 G and 12 B The upper surface of the reflector 71 is arranged according to the light emitting element 12 R , 12 G and 12 B Therefore, the lower surface of the reflector 71 (in other words, Fig.25 A surface of the base 73 indicated by reference numeral 73 in FIG. 1 is formed in a stepped shape according to the type of the light emitting element 12 .

[0242] Materials configuring the reflector 71 , the optical adjustment layer 72 , the first electrode 12A, and the second electrode 12C are similar to those described in the first example, and thus description thereof is omitted.

[0243] (Resonator Structure: Third Example)

[0244] Fig.26 A is a schematic cross-sectional view for describing a third example of a resonator structure. In the following description, the reflectors 71 provided corresponding to the sub-pixels 100R, 100G, and 100B, respectively, may be referred to as reflectors 71. R , 71 G and 71 B .

[0245] Also in the third example, the first electrode 12A and the second electrode 12C are formed with a film thickness common to the light emitting element 12 .

[0246] Then, also in the third example, the reflector 71 is arranged below the first electrode 12A of the light emitting element 12 across the optical adjustment layer 72. A resonator structure that resonates the light generated by the organic layer 12B is formed between the reflector 71 and the second electrode 12C. Similar to the first and second examples, the film thickness of the optical adjustment layer 72 is different depending on the color to be displayed by the pixel. Then, similar to the second example, the position of the upper surface of the second electrode 12C is arranged to be above the light emitting element 12. R , 12 G and 12 B Align between.

[0247] exist Fig.25 In the second example shown in FIG. 1B , the lower surface of the reflector 71 has been formed into a stepped shape according to the type of the light emitting element 12 so as to align the upper surface of the second electrode 12C.

[0248] On the contrary, Fig.26 In the third embodiment shown in FIG. 1A , the film thickness of the reflector 71 is adjusted according to the light emitting element 12. R , 12 G and 12 B More specifically, the film thickness is set so that the reflector 71 R , 71 G and 71 B Align the bottom surface of the

[0249] Materials configuring the reflector 71 , the optical adjustment layer 72 , the first electrode 12A, and the second electrode 12C are similar to those described in the first example, and thus description thereof is omitted.

[0250] (Resonator Structure: Fourth Example)

[0251] Fig.26 B is a schematic cross-sectional view for describing a fourth example of a resonator structure. In the following description, the first electrodes 12A respectively provided corresponding to the sub-pixels 100R, 100G, and 100B may be referred to as the first electrodes 12A. R 、12A G and 12A B .

[0252] exist Fig.25 In the first example of A, the first electrode 12A and the second electrode 12C of the light emitting element 12 are formed with a common film thickness. Then, the reflector 71 is arranged below the first electrode 12A of the light emitting element 12 across the optical adjustment layer 72 .

[0253] On the contrary, Fig.26 In the fourth embodiment shown in FIG. 1B , the optical adjustment layer 72 is omitted, and the film thickness of the first electrode 12A is determined according to the light emitting element 12. R , 12 G and 12 B The settings are different depending on the type.

[0254] The reflector 71 is formed with a film thickness common to the light emitting element 12. The film thickness of the first electrode 12A is different depending on the color to be displayed by the pixel. R 、12A G and 12A B With different film thicknesses, it is possible to set an optical distance that causes optimal resonance for the wavelength of light according to the color to be displayed.

[0255] Materials configuring the reflector 71 , the optical adjustment layer 72 , the first electrode 12A, and the second electrode 12C are similar to those described in the first example, and thus description thereof is omitted.

[0256] (Resonator Structure: Fifth Example)

[0257] Fig. 27 A is a schematic cross-sectional view for describing a fifth example of the resonator structure.

[0258] exist Fig.25 In the first example of A, the first electrode 12A and the second electrode 12C are formed with a film thickness common to the light emitting element 12. Then, the reflector 71 is arranged below the first electrode 12A of the light emitting element 12 across the optical adjustment layer 72.

[0259] On the contrary, Fig. 27 In the fifth embodiment shown in FIG. 1A , the optical adjustment layer 72 is omitted, and an oxide film 74 is formed on the surface of the reflector 71 . The film thickness of the oxide film 74 is set to be 100 mm / s according to the light emitting element 12 . R , 12 G and 12 B In the following description, the oxide film 74 provided for the sub-pixels 100R, 100G, and 100B may be referred to as the oxide film 74. R , 74 G and 74 B .

[0260] The film thickness of the oxide film 74 varies depending on the color to be displayed by the pixel. R , 74 G and 74 B With different film thicknesses, it is possible to set an optical distance that produces optimal resonance for the wavelength of light according to the color to be displayed.

[0261] The oxide film 74 is a film obtained by oxidizing the surface of the reflector 71 and is configured using, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 74 serves as an insulating film for adjusting the optical path length (optical distance) between the reflector 71 and the second electrode 12C.

[0262] For example, the light emitting element 12 R , 12 G and 12 B Oxide films 74 of different types and film thicknesses are formed as follows.

[0263] First, a container is filled with an electrolyte, and the substrate formed with the reflector 71 is immersed in the electrolyte. In addition, an electrode is arranged to face the reflector 71.

[0264] Then, the reference electrode applies a positive voltage to the reflector 71 to anodize the reflector 71. The film thickness of the oxide film by anodization is proportional to the voltage value relative to the electrode. Therefore, anodization is performed by applying a voltage corresponding to the type of the light emitting element 12 to each reflector 71. R , 71 G and 71 B As a result, oxide films 74 with different film thicknesses can be formed at the same time.

[0265] Materials configuring the reflector 71 , the optical adjustment layer 72 , the first electrode 12A, and the second electrode 12C are similar to those described in the first example, and thus description thereof is omitted.

[0266] (Resonator Structure: Sixth Example)

[0267] Fig. 27 B is a schematic cross-sectional view for describing a sixth example of the resonator structure.

[0268] In the sixth example, the light emitting element 12 is configured such that the first electrode 12A, the organic layer 12B, and the second electrode 12C are stacked. Note that in the sixth example, the first electrode 12A is formed to function as both an electrode and a reflector. The first electrode (and reflector) 12A uses a structure having a structure according to the light emitting element 12. R , 12 G or 12 B The type of material with the selected optical constant is formed. Since the phase shift of the first electrode (and reflector) 12A is different, the optical distance that produces the best resonance for the wavelength of light according to the color to be displayed can be set.

[0269] The first electrode (and reflector) 12A may be configured using a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu) or an alloy containing the above metal as a main component. For example, the light emitting element 12A may be formed using copper (Cu). R The first electrode (and reflector) 12A R configuration, and the light emitting element 12 may be formed using aluminum. G The first electrode (and reflector) 12A G and light emitting element 12 B The first electrode (and reflector) 12A B .

[0270] The material configuring the second electrode 12C is similar to the material described in the first example, and thus the description thereof is omitted.

[0271] (Resonator Structure: Seventh Example)

[0272] Fig.28 is a schematic cross-sectional view for describing a seventh example of the resonator structure.

[0273] The seventh example has a configuration in which basically the sixth example is applied to the light emitting element 12. R and 12 G , and the first example is applied to the light emitting element 12 B With this configuration, it is possible to set the optical distance that generates the optimum resonance for the wavelength of light in accordance with the color to be displayed.

[0274] For light emitting element 12 R and 12 G The first electrode (and reflector) 12A R and 12AG It can be configured using a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu) or an alloy containing the above metal as a main component.

[0275] The materials configuring the reflector 71B, the optical adjustment layer 72B, and the first electrode 12AB used for the light emitting element 12B are the same as those described in the first example, and thus the description thereof is omitted.

[0276] [5 Applications]

[0277] (Electronic Devices)

[0278] For example, the display device according to any one of the first embodiment and its modified examples is used as Fig.29 The module shown in the figure is incorporated into various electronic devices. Similarly, for example, the display device according to any one of the second to fourth embodiments and their modified examples can be used as Fig.29 The module shown in is incorporated into various electronic devices. In particular, the display device is suitable for display devices that require high resolution and are used by magnifying objects near the eyes, such as electronic viewfinders or head-mounted displays of video cameras and single-lens reflex cameras. The module has an area 210 on one short side of the substrate 11, the area 210 is not covered and exposed by the opposing substrate 18 and the filling resin layer 17, and the signal line drive circuit 120 and the scan line drive circuit 130 are wired and extended to the area 210 to form an external connection terminal (not shown). A flexible printed circuit board (FPC) 220 for signal input / output can be connected to the external connection terminal.

[0279] (Specific Example 1)

[0280] Fig.30 A and Fig.30 B shows an example of the appearance of a digital still camera 310. The digital still camera 310 is a single-lens reflex camera with an interchangeable lens, and has an interchangeable imaging lens unit (interchangeable lens) 312 at approximately the center of the front of a camera body (camera main body) 311, and has a grip portion 313 held by a photographer on the left side of the front.

[0281] The monitor 314 is disposed at a position offset to the left from the center of the rear surface of the camera body 311. An electronic viewfinder (eyepiece window) 315 is disposed above the monitor 314. The photographer can visually recognize the optical image of the subject guided by the imaging lens unit 312, and determine the composition by observing the electronic viewfinder 315. As the electronic viewfinder 315, a display device according to any one of the above-mentioned first embodiment and its modified examples can be used. In addition, as the electronic viewfinder 315, a display device according to any one of the above-mentioned second to fourth embodiments and their modified examples can also be used.

[0282] (Specific Example 2)

[0283] Fig.31 An example of the appearance of the head mounted display 320 is shown. The head mounted display 320 has, for example, ear hooks 322 for wearing on the user's head on both sides of a glasses-shaped display unit 321. As the display unit 321, the display device according to any one of the first embodiment and its modified examples described above can be used. In addition, as the display unit 321, the display device according to any one of the second to fourth embodiments and their modified examples can also be used.

[0284] (Specific Example 3)

[0285] Fig.32 An example of the appearance of the television device 330 is shown. For example, the television device 330 has a video display screen unit 331 including a front panel 332 and a filter glass 333, and the video display screen unit 331 is configured using the display device according to any one of the first embodiment and its modified examples described above. In addition, the video display screen unit 331 can be configured using the display device according to any one of the second to fourth embodiments and their modified examples described above.

[0286] (lighting device)

[0287] In the above-mentioned first embodiment to the fourth embodiment, the example in which the present disclosure is applied to the display device has been described. However, the present disclosure is not limited to these examples and can be applied to the lighting device.

[0288] Fig.33An example of the appearance of a vertical lighting device 400 is shown. The lighting device 400 has a lighting unit 413 attached to a pillar 412 provided on a base 411. As the lighting unit 413, a display device according to any one of the first embodiment and its modified examples or according to any one of the second to fourth embodiments or their modified examples is provided with a driving circuit for the lighting device instead of a driving circuit for the display device (such as the signal line driving circuit 120 and the scanning line driving circuit 130). In addition, the color filter 16 may not be provided, and the size of the opening of the insulating layer 13 may be appropriately selected according to the optical characteristics of the lighting device 400. In addition, by using a film as the substrate 11 and the opposing substrate 18 and having a flexible configuration, it is possible to adopt a structure such as Fig.33 Note that the number of light emitting elements 12 may be single. In addition, a monochrome filter may be provided instead of the color filter 16.

[0289] Here, the case where the lighting device is a vertical lighting device 400 has been described, but the form of the lighting device is not limited thereto, and for example, the lighting device may be installed on a ceiling, a wall, a floor, or the like.

[0290] [Example]

[0291] Hereinafter, the present disclosure will be described in detail with reference to Examples, but the present disclosure is not limited to these Examples.

[0292] The examples will be described in the following order. Note that in the following examples, the values ​​of the average thickness of the first interface layer and the second interface layer, the peak intensity ratio of the bulk layer (I N-H / I Si-H ) and the ratio of silicon oxide contained in the second interface layer to the total amount of silicon oxide and silicon nitride are obtained by the measurement method described in the first embodiment.

[0293] The peak intensity ratio of the bulk layer (I N-H / I Si-H ) and the relationship between the leakage current between pixels (1).

[0294] ii The peak intensity ratio of the bulk layer (I N-H / I Si-H ) and the relationship between the leakage current between pixels (2).

[0295] iii. Examination of the relationship between the average thickness of the first interface layer and the leakage current between pixels.

[0296] iv. Examination of the relationship between the ratio of silicon oxide contained in the second interface layer to the total amount of silicon oxide and silicon nitride and the inter-pixel leakage current.

[0297] Examination of the relationship between the uniformity of the thickness of the organic layer on the first electrode and the vertical leakage.

[0298] vi Examination of the current density distribution by electromagnetic field simulation.

[0299] <i Peak intensity ratio (I N-H / I Si-H ) of the bulk layer and the relationship with the inter-pixel leakage current (1)>

[0300] [Examples 1-1 and 1-2]

[0301] First, a driving circuit and the like are formed on one main surface of a silicon substrate using thin film formation technology, photolithography technology, and etching technology. Next, a metal layer is formed on the driving circuit and the like by sputtering, and then the metal layer is patterned by using photolithography technology and etching technology to form a plurality of first electrodes separated for each light-emitting element (i.e., for each sub-pixel).

[0302] Next, a first interface layer (SiO layer) with an average thickness of 5 nm is formed on one main surface of the silicon substrate on which a plurality of first electrodes are formed by plasma CVD, and then a bulk layer (SiN layer) with an average thickness of 40 nm is formed by CVD. At this time, SiH4, NH2, and NH3 are used as process gases. Note that the mixing ratio of the process gases is adjusted, and bulk layers with different composition ratios between Example 1-1 and Example 1-2 are formed. Next, the absorption spectrum of the bulk layer is measured by FT-IR. The results are shown in Fig.34 A of Fig.34 and B of.

[0303] Next, photolithography technology and etching technology are used to pattern the first interface layer and the bulk layer. Thereafter, the surface of the bulk layer is plasma-treated to form a second interface layer (SiON layer) with a thickness of 3 nm on the surface of the bulk layer to obtain an insulating layer. At this time, the conditions of the plasma treatment are adjusted so that the ratio of silicon oxide to the total amount of silicon oxide and silicon nitride contained in the second interface layer is 90%.

[0304] Next, a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer are sequentially stacked on the first electrode and the insulating layer by vapor deposition to form an organic layer. Next, a second electrode is formed on the organic layer by sputtering. As a result, a plurality of light-emitting elements are formed on one main surface of the silicon substrate.

[0305] Next, a protective layer is formed on the second electrode by CVD method, and then a color filter is formed on the protective layer. Next, the color filter is covered with a filling resin layer by ODF method, and then the counter substrate is placed on the filling resin layer. Next, the filling resin layer is cured by irradiating it with ultraviolet rays, and the substrate and the counter substrate are bonded together via the filling resin layer. As a result, the display device is sealed.

[0306] (Peak intensity ratio)

[0307] The peak intensity I derived from N-H is obtained using the absorption spectrum measured after forming the bulk layer N-H and the peak intensity I derived from Si-H Si-H of the peak intensity ratio (I N-H / I Si-H ). The results are shown in Table 1.

[0308] [Table 1]

[0309] <![CDATA[I N-H ]]> <![CDATA[I Si-H ]]> <![CDATA[I N-H / I Si-H ]]> Example 1-1 9.09 20.38 0.45 Example 1-2 22.4 4.52 4.96

[0310] As can be seen from Table 1, between Example 1-1 and Example 1-2 where the mixing ratio of the CVD process gas is adjusted and the bulk layer is formed, the peak intensity ratio (I N-H / I Si-H ) of the bulk layer is different.

[0311] (Inter-pixel leakage amount)

[0312] The inter-pixel leakage current of the display devices of Example 1-1 and 1-2 obtained as described above is measured. The inter-pixel leakage current is measured by measuring the current values flowing through the R and G sub-pixels with respect to the voltage applied to the B sub-pixel in the RGB sub-pixels. Note that the evaluation of the inter-pixel leakage amount described below will also be performed by similar measurements. As a result of the above measurement, it was found that the inter-pixel leakage current depends on the peak intensity ratio (I N-H / I Si-H ) of the bulk layer. Specifically, it was found that compared with Example 1-2 where the peak intensity ratio (I N-H / I Si-H ) is 4.96, in Example 1-1 where the peak intensity ratio (I N-H / I Si-H ) is 0.45, the leakage current flowing between the pixels is suppressed.

[0313] <ii Examination of the relationship between the peak intensity ratio (I N-H / I Si-H ) of the bulk layer and the inter-pixel leakage current (2)>

[0314] [Examples 2-1 to 2-5]

[0315] In addition to setting the peak intensity ratio (I N-H / I Si-H ) of the bulk layer to 0.5 (Example 2-1), 1 (Example 2-2), 2 (Example 2-3), 3 (Example 2-4), and 4 (Example 2-5) by adjusting the film formation conditions of the bulk layer, a display device was obtained in a similar manner to Example 1-1.

[0316] (Inter-pixel leakage amount)

[0317] The inter-pixel leakage current of the display devices of Examples 2-1 and 2-5 obtained as described above was measured. The results are shown in Fig.35 .

[0318] From Fig.35 , the following points can be seen.

[0319] The inter-pixel leakage current depends on the peak intensity ratio (I N-H / I Si-H ), and the smaller the peak intensity ratio (I N-H / I Si-H ), the more the inter-pixel leakage current is suppressed.

[0320] From the viewpoint of suppressing the inter-pixel leakage current, the peak intensity ratio (I N-H / I Si-H ) is preferably less than 4, and more preferably 3 or less.

[0321] <Examination of the relationship between the average thickness of the first interface layer and the inter-pixel leakage current>

[0322] [Examples 3-1 to 3-6]

[0323] A display device was obtained in a similar manner to Example 1-1 (average thickness of the first interface layer: 5 nm), except that the average thickness of the first interface layer was 1 nm (Example 3-1), 3 nm (Example 3-2), 7 nm (Example 3-3), 9 nm (Example 3-4), 11 nm (Example 3-5), 13 nm (Example 3-6), and 15 nm (Example 3-7).

[0324] [Comparative Example 3-1]

[0325] A display device was obtained in a similar manner to Example 1-1, except that the first interface layer was not formed.

[0326] (Inter-pixel leakage amount)

[0327] The inter-pixel leakage current of the display devices of Example 1-1, Examples 3-1 to 3-6, and Comparative Example 3-1 obtained as described above was measured. The results are shown in Fig.36 .

[0328] From Fig.36 The following points can be seen.

[0329] The leakage current between pixels depends on the average thickness of the first interface layer. From the viewpoint of suppressing the leakage current between pixels, the average thickness of the first interface layer is preferably from 1 to 15 nm, excluding 15 nm, more preferably from 1 to 13 nm, including the end values, even more preferably from 1 to 9 nm, including the end values, particularly preferably from 1 to 7 nm, including the end values, or most preferably from 1 to 5 nm, including the end values.

[0330] It can be seen that when the average thickness of the first interface layer is less than 1 nm, the reason for the increase in the leakage current between pixels is due to the reaction between the first electrode and the bulk layer, the reduction of the fixed charge held by the bulk layer, and the bulk layer becoming unable to maintain the positive charge state. At the same time, it can be seen that when the average thickness of the first interface layer is 15 nm or more, the reason for the increase in the leakage current between pixels is that the hole current can easily flow from the first electrode to the upper surface of the insulating layer through the edge of the first interface layer.

[0331] <iv Examination of the relationship between the ratio of silicon oxide contained in the second interface layer to the total amount of silicon oxide and silicon nitride and the leakage current between pixels>

[0332] [Examples 4-1 to 4-3]

[0333] A display device of Example 1-1 was obtained by adjusting the film formation conditions (plasma treatment conditions) of the second interface layer, except that the ratio of silicon oxide to the total amount of silicon oxide and silicon nitride contained in the second interface layer was set to 60% (Example 4-1), 80% (Example 4-2), and 100% (Example 4-3).

[0334] (Leakage amount between pixels)

[0335] The leakage current between pixels of the display devices of Examples 4-1 and 4-3 obtained as described above was measured. As a result, it was found that the leakage current between pixels depends on the ratio of silicon oxide contained in the second interface layer to the total amount of silicon oxide and silicon nitride, and from the viewpoint of suppressing the leakage current between pixels, this ratio is preferably set to 80% or more.

[0336] <v Examination of the relationship between the uniformity of the thickness of the organic layer on the first electrode and the vertical leakage>

[0337] [Example 5-1]

[0338] In Example 5-1, a display device having the Fig.11 configuration shown was manufactured as follows.

[0339] First, as Fig.15As shown in A of FIG. 1 , a silicon substrate having a driving circuit and the like formed on one main surface is obtained by using thin film forming technology, photolithography technology, and etching technology. Next, an electrode layer (ACX / ITO layer) is formed on the driving circuit and the like by sputtering. Fig.15 As shown in B, however, the electrode layer is patterned using photolithography and etching techniques to form a plurality of first electrodes separated from each other for each light emitting element (ie, for each sub-pixel), as shown in FIG. Fig.15 As shown in C.

[0340] Then, if Fig.15 As shown in D, a first interface layer (SiO layer) is formed on one main surface of a silicon substrate having a plurality of first electrodes by a CVD method, and then, as shown in Fig.15 As shown in FIG. 1E, the first interface layer 24 is removed by etching back while retaining the first interface layer having the same height as the first electrode 12A on the side surface of the first electrode. Fig.15 As shown in F of FIG. 1 , a bulk layer (SiN layer) is formed by CVD. Fig.16 As shown in A, a photoresist layer is formed on the bulk layer by spin coating to make the surface flat.

[0341] Next, the photoresist layer is removed and part of the bulk layer is removed, so that the first electrode, the first interface layer and the bulk layer having the same height are formed by an etch-back method, as shown in FIG. Fig.16 Next, the surface of the bulk layer 13A is plasma treated to form a second interface layer (SiON layer) with an average thickness of 2.5 nm, as shown in FIG. Fig.16 As shown in C. Thus, an insulating layer is obtained. Next, a hole injection layer, a hole transport layer, a light-emitting layer and an electron transport layer are sequentially stacked on the first electrode, the first interface layer and the insulating layer by a vapor deposition method. Thus, an organic layer with a constant thickness is formed. A display device is obtained by performing the following process similar to Example 1-1.

[0342] Note that the average thickness of the first electrode, the first interface layer, and the insulating layer was set to 65 nm by adjusting the process conditions.

[0343] [Example 5-2]

[0344] In Example 5-2, a Fig.14 That is, a display device was manufactured similarly to Example 1 except that the average thickness of the insulating layer was set to 85 nm by adjusting the process conditions.

[0345] [Example 5-3]

[0346] In Example 5-3, a Fig.18 A display device of the configuration shown.

[0347] First, the process of forming a substrate to forming a first interface layer is performed similarly to Example 5-1, and Fig. 20 As shown in A, a first interface layer (SiO layer) is formed on one main surface of a substrate on which a plurality of first electrodes are formed.

[0348] Then, if Fig. 20 As shown in FIG. 1B, a bulk layer (SiN layer) is formed on the first interface layer by CVD. Next, a photoresist layer is formed on the bulk layer, and then, as shown in FIG. Fig. 20 As shown in C, an opening is formed in a portion of the photoresist layer, for example, by spin coating, and the portion corresponds to the portion above the first electrode. Fig.21 As shown in A, openings are formed in portions of the first interface layer and the bulk layer by etching, which portions correspond to above the first electrode layer. At this time, the etching rate between the first interface layer (SiO) and the bulk layer (SiN) is adjusted using a deposition gas such as CH2F2, and etching is performed. As a result, the openings are formed so that the outer peripheral edge of the opening of the insulating layer is located inside the outer peripheral edge of the opening of the first interface layer.

[0349] Next, the surface of the bulk layer 13A is plasma treated to form a second interface layer (SiON layer) with an average thickness of 2.5 nm. Fig.21 As shown in B. Thus, an insulating layer is obtained. Then, a hole injection layer, a hole transport layer, a light emitting layer and an electron transport layer are sequentially stacked on the first electrode and the insulating layer by a vapor deposition method. Thus, as Fig.21 As shown in Example 1-1, an organic layer having a plurality of convex portions on the upper surface and having a substantially constant thickness in a region inside the convex portions is formed. A display device is obtained by performing the following process similar to that of Example 1-1.

[0350] Note that by adjusting the process conditions, the average thickness of the first electrode was set to 65 nm, the average thickness of the first interface layer was set to 9 nm, and the average thickness of the insulating layer was set to 26 nm.

[0351] [Example 5-4]

[0352] In Example 5-4, a Fig.19 A display device of the configuration shown.

[0353] A display device is obtained similar to Example 5-1, except that the etching rate between the first interface layer (SiO) and the bulk layer (SiN) is adjusted so that the peripheral edge of the opening of the insulating layer and the peripheral edge of the opening of the first interface layer overlap during the formation of the openings in the first interface layer and the bulk layer.

[0354] [Comparative Example 5-1]

[0355] In Comparative Example 5-1, a display device having the Fig.13 configuration shown below was manufactured.

[0356] That is, except that the average thickness of the insulating layer was set to 45 nm by adjusting the process conditions, the display device was manufactured in a similar manner to Example 1.

[0357] (Luminous efficiency)

[0358] The luminous efficiencies of the display devices of Examples 5-1 to 5-4 and Comparative Example 5-1 obtained as described above were obtained. The results are shown in Fig.37 .

[0359] From Fig.37 the following points can be seen.

[0360] The luminous efficiencies of the display devices of Examples 5-1 to 5-3 are higher than those of the display devices of Example 5-4 and Comparative Example 5-1. In particular, the luminous efficiency in the low current density range is high.

[0361] <vi Inspection of current density distribution by electromagnetic field simulation>

[0362] [Example 6-1]

[0363] First, as a model for electromagnetic field simulation, a display device having the Fig.38 configuration shown in A below was set. Hereinafter, the setting conditions of the layers will be described.

[0364] Second electrode: MgAg alloy electrode,

[0365] Organic layer: thickness 100 nm, dielectric constant ε = 4.35×10 -6 [S / m], and relative dielectric constant ε r = 3,

[0366] Insulating layer: material SiN, dielectric constant ε = 0 [S / m], relative dielectric constant ε r = 7,

[0367] First electrode: Al electrode.

[0368] Next, using the above model, the current density distribution of the organic layer was calculated by electromagnetic field simulation (ANSYS Maxwell). The results are shown in Fig.40 and Fig.41 . The integrated value of the portion shown by the straight line L (length 10 nm) in Fig.41 is 1.29×10 -6 A / m.

[0369] Fig.40 and Fig.41 The symbols (1), (2), (3), etc. in the figure correspond to the magnitude of the current density (grayscale legend). In the figures showing the simulation results of the following Example 6-2 and Comparative Examples 6-1 and 6-2, the symbols (1), (2), (3), etc. also correspond to the magnitude of the current density (grayscale legend).

[0370] [Example 6-1]

[0371] First, as a model for electromagnetic field simulation, we set Fig.38 The display device of the configuration shown in B. Hereinafter, the setting conditions of the layers are described.

[0372] Second electrode: MgAg alloy electrode,

[0373] Organic layer: thickness 100nm, dielectric constant ε = 4.35×10 -6 [S / m], and relative dielectric constant ε r =3,

[0374] Insulation layer: material SiN, dielectric constant ε = 0 [S / m], relative dielectric constant ε r =7,

[0375] First electrode: Al electrode.

[0376] Next, the above model was used to calculate the current density distribution of the organic layer through electromagnetic field simulation (ANSYS Maxwell). Fig.42 and Fig.43 As shown in Fig.43 The integral value of the portion indicated by the straight line L (length 10 nm) is 1.48×10 -6 A / m.

[0377] [Comparative Example 6-1]

[0378] First, as a model for electromagnetic field simulation, we set Fig.39 A display device of the configuration shown in A. Hereinafter, setting conditions of the layers are described.

[0379] Second electrode: MgAg alloy electrode,

[0380] Organic layer: thickness 100nm, dielectric constant ε = 4.35×10 -6 [S / m], and relative dielectric constant ε r =3,

[0381] First electrode: Al electrode.

[0382] Next, the above model was used to calculate the current density distribution of the organic layer through electromagnetic field simulation (ANSYS Maxwell). Fig.44 As shown in Fig.44 The integral value of the portion indicated by the straight line L (length 10 nm) is 1.75×10 -6 A / m.

[0383] [Comparative Example 6-3]

[0384] First, as a model for electromagnetic field simulation, we set Fig.39 The display device of the configuration shown in B. Hereinafter, the setting conditions of the layers are described.

[0385] Second electrode: MgAg alloy electrode,

[0386] Organic layer: thickness 100nm, dielectric constant ε = 4.35×10 -6 [S / m], and relative dielectric constant ε r =3,

[0387] Insulation layer: material SiN, dielectric constant ε = 0 [S / m], relative dielectric constant ε r =7,

[0388] First electrode: Al electrode.

[0389] Next, the above model was used to calculate the current density distribution of the organic layer through electromagnetic field simulation (ANSYS Maxwell). Fig.45 and Fig.46 As shown in Fig.46 The integral value of the portion indicated by the straight line L (length 10 nm) is 2.50×10 -6 A / m.

[0390] It can be seen from the analysis results of the electromagnetic field simulation of Examples 6-1 and 6-2 and Comparative Example 6-1 that when the thickness of the organic layer on the first electrode is constant, that is, the height of the organic layer is constant, the current value on the peripheral edge portion of the first electrode can be suppressed.

[0391] The first to fourth embodiments of the present disclosure and their modifications have been described in detail. However, the present disclosure is not limited to the first to fourth embodiments and their modifications, and various modifications based on the technical concept of the present disclosure are possible.

[0392] For example, the configurations, methods, steps, shapes, materials, numerical values, etc. given in the first to fourth embodiments and their variations are merely examples, and configurations, methods, steps, shapes, numerical values, etc. different from the embodiments and variations may be used as needed.

[0393] Furthermore, configurations, methods, steps, shapes, materials, numerical values, and the like given in the first to fourth embodiments and their modified examples may be combined with one another without departing from the gist of the present disclosure.

[0394] Furthermore, in the numerical ranges described step by step in the first to fourth embodiments and their modifications, the upper limit value or the lower limit value of the numerical range of one step may be replaced by the upper limit value and the lower limit value of the numerical range of another step.

[0395] In addition, the materials exemplified in the first to fourth embodiments and their modified examples may be used alone or in combination of two or more types unless otherwise specified.

[0396] The present disclosure may also adopt the following configurations.

[0397] (1) A display device comprising:

[0398] A plurality of first electrodes, each first electrode being provided for each pixel;

[0399] an insulating layer including a silicon compound, disposed between the first electrodes and covering the outer peripheral edge portions of the first electrodes;

[0400] a first interface layer comprising a first silicon oxide and disposed at an interface between the first electrode and the insulating layer;

[0401] an organic layer including a light emitting layer and disposed on the first electrode and the insulating layer, common to all pixels; and

[0402] The second electrode is disposed on the organic layer, wherein

[0403] The insulating layer contains a second silicon oxide in a surface portion on the organic layer side.

[0404] (2) The display device according to (1), wherein the insulating layer further contains silicon nitride in a surface portion on the organic layer side.

[0405] (3) The display device according to (2), wherein:

[0406] The silicon compound includes silicon nitride, and

[0407] The ratio of the second silicon oxide contained in the surface portion on the organic layer side to the total amount of the second silicon oxide and silicon nitride is 80% or more.

[0408] (4) The display device according to any one of (1) to (3), wherein a composition of the insulating layer changes continuously from the bulk toward a surface on the organic layer side.

[0409] (5) The display device according to any one of (1) to (3), wherein:

[0410] The insulating layer includes a bulk layer including a silicon compound; and a second interface layer including a second silicon oxide and disposed at an interface between the bulk layer and the organic layer.

[0411] (6) The display device according to (5), wherein an average thickness of the second interface layer is 10 nm or less.

[0412] (7) The display device according to (5) or (6), wherein:

[0413] The second interface layer includes two or more layers, and

[0414] At least one of the two or more layers includes a second silicon oxide.

[0415] (8) The display device according to (5) or (6), wherein:

[0416] The second interface layer includes a first layer including a second silicon oxide; and a second layer including at least one type of silicon nitride or silicon oxynitride and disposed on the first layer.

[0417] (9) The display device according to any one of (5) to (8), further comprising:

[0418] The intermediate layer includes silicon fluoride and is disposed between the second interface layer and the bulk layer.

[0419] (10) The display device according to any one of (5) to (9), wherein the second interface layer covers the main surface of the bulk layer and an edge of the bulk layer.

[0420] (11) The display device according to (10), wherein a portion of the second interface layer covering an edge of the bulk layer and a portion of the second interface layer covering a major surface of the bulk layer have different compositions.

[0421] (12) The display device according to (11), wherein a portion of the second interface layer covering an edge of the insulating layer is positively charged.

[0422] (13) The display device according to any one of (1) to (12), wherein an average thickness of the first interface layer is less than 15 nm.

[0423] (14) The display device according to any one of (1) to (13), wherein the insulating layer is positively charged.

[0424] (15) The display device according to any one of (1) to (14), wherein the silicon compound includes silicon nitride.

[0425] (16) The display device according to (15), wherein:

[0426] The insulating layer also contains hydrogen, and

[0427] Peak intensity I from NH bond N-H The peak intensity I derived from the Si-H bond Si-H The peak intensity ratio (I N-H / I Si-H ) is less than 4, and the peak intensity ratio is obtained by analyzing the insulating layer by X-ray photoelectron spectroscopy.

[0428] (17) The display device according to any one of (1) to (16), wherein the first electrode includes an oxide conductive layer.

[0429] (18) The display device according to any one of (1) to (17), wherein:

[0430] The organic layer includes a plurality of convex portions provided in a portion corresponding to each outer peripheral edge portion of the plurality of first electrodes, the portion being a surface on the second electrode side, and

[0431] The thickness of the organic layer in the inner region of the projection is substantially constant.

[0432] (19) The display device according to (18), wherein:

[0433] The first interface layer has a plurality of first openings respectively disposed above the plurality of first electrodes, the insulating layer has a plurality of second openings respectively disposed above the plurality of first electrodes, and

[0434] The aperture ratio of the insulating layer is higher than the aperture ratio of the first interface layer.

[0435] (20) The display device according to (18) or (19), wherein:

[0436] The first interface layer has a plurality of first openings respectively disposed above the plurality of first electrodes, the insulating layer has a plurality of second openings respectively disposed above the plurality of first electrodes, and

[0437] The outer peripheral edge of the first opening is located inside the outer peripheral edge of the second opening.

[0438] (21) The display device according to (20), wherein:

[0439] The first interface layer has a protrusion protruding relative to the outer peripheral edge of the second opening, and

[0440] The thickness of the protrusion increases as the distance from the first opening increases.

[0441] (22) The display device according to any one of (1) to (21), wherein the first electrode contains indium oxide and tin oxide.

[0442] (23) The display device according to any one of (1) to (22), wherein the pixel has a resonator structure that resonates with light generated by the light emitting element.

[0443] (24) An electronic device comprising:

[0444] A display device according to any one of (1) to (23).

[0445] (25) A display device comprising:

[0446] A plurality of first electrodes, each first electrode being provided for each pixel;

[0447] an insulating layer including a silicon compound and disposed between the first electrodes;

[0448] a first interface layer comprising a first silicon oxide and disposed between a side surface of the first electrode and a side surface of the insulating layer;

[0449] an organic layer including a light emitting layer and disposed on the first electrode and the insulating layer, common to all pixels; and

[0450] The second electrode is disposed on the organic layer, wherein

[0451] The thickness of the organic layer on the first electrode is substantially constant.

[0452] (26) The display device according to (25), wherein a height H1 of the organic layer on the first electrode and a height H2 of the organic layer in a portion around the first electrode satisfy a relationship of H1 ≤ H2.

[0453] (27) The display device according to (25) or (26), wherein a height h1 of the first electrode, a height h2 of the first interface layer, and a height h3 of the insulating layer satisfy a relationship of h1≤h2≤h3.

[0454] (28) The display device according to any one of (25) to (27), wherein the first interface layer covers an outer peripheral edge portion of the first electrode.

[0455] (29) The display device according to any one of (25) to (27), wherein the first interface layer and the insulating layer cover an outer peripheral edge portion of the first electrode.

[0456] (30) The display device according to any one of (25) to (29), wherein:

[0457] The first interface layer has a plurality of first openings respectively arranged corresponding to the plurality of first electrodes, the insulating layer has a plurality of second openings respectively arranged corresponding to the plurality of first electrodes, and

[0458] The aperture ratio of the insulating layer is higher than the aperture ratio of the first interface layer.

[0459] (31) The display device according to any one of (25) to (30), wherein the first electrode contains indium oxide and tin oxide.

[0460] (32) The display device according to any one of (25) to (31), wherein the insulating layer contains a second silicon oxide in a surface portion on the organic layer side.

[0461] (33) The display device according to any one of (25) to (32), wherein the insulating layer has a plurality of inclined surfaces respectively surrounding the plurality of first electrodes.

[0462] (34) The display device according to any one of (25) to (33), wherein the pixel has a resonator structure that resonates with light generated by the light-emitting element.

[0463] (35) A display device comprising:

[0464] A plurality of first electrodes, each first electrode being provided for each pixel;

[0465] An insulating layer, disposed between the first electrodes;

[0466] A first interface layer is provided between a side surface of the first electrode and a side surface of the insulating layer;

[0467] an organic layer including a light emitting layer and disposed on the first electrode and the insulating layer, common to all pixels; and

[0468] The second electrode is disposed on the organic layer, wherein

[0469] The thickness of the organic layer on the first electrode is substantially constant.

[0470] (36) An electronic device comprising: a display device according to any one of (25) to (35).

[0471] Reference Symbols List

[0472] 10, 101, 102, 103, 104, 105, 20A, 20B, and 30A display device

[0473] 11 substrate

[0474] 12 Light emitting elements

[0475] 12A and 12D first electrode

[0476] 12A1 electrode layer

[0477] 12B Organic layer

[0478] 12B1 hole injection layer

[0479] 12B2 hole transport layer

[0480] 12B3 light emitting layer

[0481] 12B4 electron transport layer

[0482] 12C Second electrode

[0483] 12CA convex part

[0484] 12D1 metal layer

[0485] 12D2 oxide conductive layer

[0486] 13, 131, 132, 133, 134, 23, 43 insulation layer

[0487] 13A, 23A and 43A bulk layers

[0488] 13A1 Photoresist layer

[0489] 13B, 13D, 13E, 23B and 43B second interface layer

[0490] 13C middle layer

[0491] 13D1 First Floor

[0492] 13D2 Second Floor

[0493] 13H, 14H and 43H openings

[0494] 14 and 24 first interface layer

[0495] 14A Protrusion

[0496] 15. Protective layer

[0497] 16 Color Filters

[0498] 17 Filling resin layer

[0499] 18 Opposite substrate

[0500] 23A1 photoresist layer

[0501] 43C inclined surface

[0502] 100R, 100G and 100B sub-pixels

[0503] 110A Display area

[0504] 110B Outlying Area

[0505] 120 signal line drive circuit

[0506] 130 Scan line driving circuit

[0507] 120A signal line

[0508] 130A Scan Line

[0509] 140 pixel drive circuit

[0510] 310 Digital still camera (electronic device)

[0511] 320 Head mounted display (electronic device)

[0512] 330 Television equipment (electronic equipment)

[0513] 400 lighting fixtures

Claims

1. A display device, comprising: A plurality of first electrodes, each first electrode being provided for each pixel; an insulating layer containing a silicon compound, disposed between the first electrodes and covering the outer peripheral edge portions of the first electrodes; a first interface layer comprising a first silicon oxide and disposed at an interface between the first electrode and the insulating layer; an organic layer, including a light-emitting layer, and disposed on the first electrode and the insulating layer, and common to all pixels; as well as The second electrode is disposed on the organic layer, wherein: the insulating layer contains a second silicon oxide in a surface portion on the organic layer side, Wherein, the insulating layer comprises: a bulk layer comprising the silicon compound; and a second interface layer comprising the second silicon oxide and disposed at an interface between the bulk layer and the organic layer, Wherein, the silicon compound comprises silicon nitride, wherein the second interface layer covers the main surface of the bulk layer and the end surface of the bulk layer, Wherein, the second interface layer further comprises silicon nitride, and The ratio of the second silicon oxide to the total amount of the second silicon oxide and the silicon nitride contained in the second interface layer is greater than 80%.

2. The display device according to claim 1, wherein: The composition of the insulating layer changes continuously from the bulk toward the surface on the organic layer side.

3. The display device according to claim 1, wherein: The average thickness of the second interface layer is less than 10 nm.

4. The display device according to claim 1, wherein: The second interface layer includes two or more layers, and At least one of the two or more layers includes the second silicon oxide.

5. The display device according to claim 1, wherein: The second interface layer comprises: A first layer comprising the second silicon oxide; and The second layer includes at least one type of silicon nitride and silicon oxynitride and is disposed on the first layer.

6. The display device according to claim 1, further comprising: An intermediate layer includes silicon fluoride and is disposed between the second interface layer and the bulk layer.

7. The display device according to claim 1, wherein: The second interface layer covers a major surface of the bulk layer and an edge of the bulk layer.

8. The display device according to claim 7, wherein: A portion of the second interface layer covering the edge of the bulk layer has a different composition than a portion of the second interface layer covering the major surface of the bulk layer.

9. The display device according to claim 8, wherein: A portion of the second interface layer covering an edge of the insulating layer is positively charged.

10. The display device according to claim 1, wherein: The average thickness of the first interface layer is less than 15 nm.

11. The display device according to claim 1, wherein: The insulating layer is positively charged.

12. The display device according to claim 1, wherein: The silicon compound includes silicon nitride.

13. The display device according to claim 12, wherein: The insulating layer further comprises hydrogen, and Peak intensity I from NH bond N-H The peak intensity I derived from the Si-H bond Si-H The peak intensity ratio I N-H / I Si-H is less than 4, and the peak intensity ratio is obtained by analyzing the insulating layer by X-ray photoelectron spectroscopy.

14. The display device according to claim 1, wherein: The first electrode includes an oxide conductive layer.

15. The display device according to claim 1, wherein: The organic layer includes a plurality of convex portions provided in portions corresponding to respective peripheral edge portions of the plurality of first electrodes, the portions corresponding to the respective peripheral edge portions being surfaces on the second electrode side, and The thickness of the organic layer in the region within the convex portion is constant.

16. The display device according to claim 15, wherein: The first interface layer has a plurality of first openings respectively disposed above the plurality of first electrodes, The insulating layer has a plurality of second openings respectively disposed above the plurality of first electrodes, and The aperture ratio of the insulating layer is higher than the aperture ratio of the first interface layer.

17. The display device according to claim 15, wherein: The first interface layer has a plurality of first openings respectively disposed above the plurality of first electrodes, The insulating layer has a plurality of second openings respectively disposed above the plurality of first electrodes, and The outer peripheral edge of the first opening is located inside the outer peripheral edge of the second opening.

18. The display device according to claim 17, wherein: The first interface layer has a protrusion protruding relative to the outer peripheral edge of the second opening, and The thickness of the protrusion increases as the distance from the first opening increases.

19. The display device according to claim 1, wherein: The first electrode includes indium oxide and tin oxide.

20. The display device according to claim 1, wherein: The pixel has a resonator structure that resonates light generated by a light emitting element.

21. An electronic device comprising: The display device according to claim 1.

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