Light-emitting unit, display panel and display device

Abstract

The embodiment of the present application provides a light-emitting unit, a display panel and a display device. In the light-emitting unit provided in the embodiment of the present application, by setting the area of ​​the overlapping area of ​​the orthographic projection of the second semiconductor layer on the reflective layer and the orthographic projection of the light-emitting layer on the reflective layer to be smaller than the area of ​​the reflective layer, the light emitted by the light-emitting layer is reflected by the part of the top wall close to the side wall in the second semiconductor layer, and then the light is incident on the reflective layer, and after being reflected by the reflective layer, the light is emitted from the light-emitting surface of the light-emitting unit instead of from the side wall of the light-emitting unit, thereby reducing the probability of light emitting from the side wall of the light-emitting unit, reducing the side wall light emission ratio of the light-emitting unit, reducing the intensity of the light emitted from the side wall of the light-emitting unit, and further reducing the difference in the side wall light emission ratio of the light-emitting units of different light-emitting colors in the same display panel, thereby reducing the color deviation of the display screen of the display panel in the side view, and ensuring the user experience.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular, to a light-emitting unit, a display panel and a display device. Background Art

[0002] With the development of display technology, more and more products are using micro light emitting diode (μLED, including Mini LED and Micro LED) display panels.

[0003] At present, the light-emitting structure of the micro light-emitting diode display panel includes red light-emitting units, green light-emitting units and blue light-emitting units. The light-emitting units of different light-emitting colors have different light-emitting characteristics, especially the side wall light output of the light-emitting units of different light-emitting colors is quite different, resulting in serious color cast in the side-view display picture of the micro light-emitting diode display panel when viewed from the side, thereby affecting the user experience. Summary of the invention

[0004] In view of the shortcomings of the existing methods, the present application proposes a light-emitting unit, a display panel and a display device to solve the technical problem in the prior art that in a micro-light-emitting diode display panel, the side wall light output of the light-emitting units with different light-emitting colors is quite different, resulting in serious color cast in the side-view display screen.

[0005] In a first aspect, an embodiment of the present application provides a light-emitting unit, including:

[0006] Reflective layer;

[0007] A first semiconductor layer, located on one side of the reflective layer;

[0008] A light emitting layer is located on a side of the first semiconductor layer away from the reflective layer;

[0009] The second semiconductor layer is located on a side of the light-emitting layer away from the reflective layer, and the area of ​​the overlapping region between the orthographic projection of the second semiconductor layer on the reflective layer and the orthographic projection of the light-emitting layer on the reflective layer is smaller than the area of ​​the reflective layer.

[0010] In a second aspect, an embodiment of the present application provides a display panel, comprising: the light-emitting unit provided in the first aspect above.

[0011] In a third aspect, an embodiment of the present application provides a display device, comprising: the display panel provided in the second aspect above.

[0012] The beneficial technical effects brought about by the technical solution provided by the embodiment of the present application include:

[0013] In the light-emitting unit provided in the embodiment of the present application, by setting the area of ​​the overlapping region of the orthographic projection of the second semiconductor layer on the reflective layer and the orthographic projection of the light-emitting layer on the reflective layer to be smaller than the area of ​​the reflective layer, the light emitted by the light-emitting layer is reflected by the part of the top wall close to the side wall in the second semiconductor layer, and then the light is incident on the reflective layer. After reflection by the reflective layer, the light is emitted from the light-emitting surface of the light-emitting unit instead of from the side wall of the light-emitting unit, thereby reducing the probability of light being emitted from the side wall of the light-emitting unit, reducing the side wall light emission ratio of the light-emitting unit, reducing the intensity of the light emitted from the side wall of the light-emitting unit, and further reducing the difference in the side wall light emission ratio of light-emitting units of different light-emitting colors in the same display panel, thereby reducing the color deviation of the display screen of the display panel in the case of side viewing, thereby ensuring the user experience.

[0014] Additional aspects and advantages of the present application will be partially given in the following description, which will become apparent from the following description, or will be understood through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0016] Figure 1 A schematic diagram of the structure of a light-emitting unit provided in an embodiment of the present application;

[0017] Figure 2 Provided in the embodiments of this application Figure 1 A schematic diagram of part of the light path during the operation of the light-emitting unit shown;

[0018] Figure 3 Provided in the embodiments of this application Figure 1 A schematic diagram of the top view of the light-emitting unit shown;

[0019] Figure 4 A schematic diagram of the structure of another light-emitting unit provided in an embodiment of the present application;

[0020] Figure 5 Provided in the embodiments of this application Figure 4 A schematic diagram of the top view of the light-emitting unit shown;

[0021] Figure 6 A schematic diagram of the structure of a flip-chip structure light-emitting unit provided in an embodiment of the present application;

[0022] Figure 7 A schematic diagram of the structure of a positive structure light-emitting unit provided in an embodiment of the present application;

[0023] Figure 8A schematic diagram of the structure of a light-emitting unit in a display panel provided in an embodiment of the present application.

[0024] Description of reference numerals:

[0025] 10-reflection layer;

[0026] 20-first semiconductor layer; 21-first P-type sub-semiconductor layer; 22-second P-type sub-semiconductor layer; 201-first N-type sub-layer; 202-second N-type sub-layer;

[0027] 30- luminous layer;

[0028] 40-second semiconductor layer; 41-first part of the second semiconductor layer 40; 42-second part of the second semiconductor layer 40; 401-first P-type semiconductor layer; 402-second P-type semiconductor layer; 403-first P-type sublayer; 404-second P-type sublayer; 405-third P-type sublayer; 411-electrode structure;

[0029] 50 - Electrode layer. DETAILED DESCRIPTION

[0030] The present application is described in detail below, and examples of embodiments of the present application are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar components or components with the same or similar functions. In addition, if the detailed description of the known technology is unnecessary for the features of the present application shown, it will be omitted. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be interpreted as limiting the present application.

[0031] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those generally understood by those skilled in the art to which this application belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with those in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as here.

[0032] It will be understood by those skilled in the art that, unless expressly stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present application refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. It should be understood that when we refer to an element as being "connected" to another element, it may be directly connected to the other element, or there may be intermediate elements. The term "and / or" used herein includes all or any unit and all combinations of one or more associated listed items.

[0033] The inventors of the present application have conducted research and discovered that in a micro-LED display panel, light-emitting units of different light-emitting colors have different light-emitting characteristics, and in particular, the side wall light output of light-emitting units of different light-emitting colors is quite different. For example, for light-emitting units of the same size, the side wall light output ratio of the red light-emitting unit is much smaller than that of the blue light-emitting unit and the green light-emitting unit, which results in serious color cast on the side display screen when viewed from the side, thereby affecting the user experience.

[0034] The light-emitting unit, display panel and display device provided in the present application are intended to solve the above technical problems in the prior art.

[0035] The technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems are described in detail below with specific embodiments.

[0036] The present application provides a light emitting unit. The structure diagram of the light emitting unit is as follows: Figure 1 As shown, it includes: a reflective layer 10, a first semiconductor layer 20, a light emitting layer 30 and a second semiconductor layer 40.

[0037] The first semiconductor layer 20 is located on one side of the reflective layer 10; the light-emitting layer 30 is located on the side of the first semiconductor layer 20 away from the reflective layer 10; the second semiconductor layer 40 is located on the side of the light-emitting layer 30 away from the reflective layer 10, and the area of ​​the overlapping region of the orthographic projection of the second semiconductor layer 40 on the reflective layer 10 and the orthographic projection of the light-emitting layer 30 on the reflective layer 10 is smaller than the area of ​​the reflective layer 10.

[0038] In the light-emitting unit provided in the embodiment of the present application, by setting the area of ​​the overlapping region of the orthographic projection of the second semiconductor layer 40 on the reflective layer 10 and the orthographic projection of the light-emitting layer 30 on the reflective layer 10 to be smaller than the area of ​​the reflective layer 10, the light emitted by the light-emitting layer 30 is reflected by the part of the top wall close to the side wall in the second semiconductor layer 40, and then the light is incident on the reflective layer 10. After being reflected by the reflective layer 10, the light is emitted from the light-emitting surface of the light-emitting unit instead of from the side wall of the light-emitting unit, thereby reducing the probability of light being emitted from the side wall of the light-emitting unit, reducing the side wall light emission ratio of the light-emitting unit, and reducing the intensity of the light emitted from the side wall of the light-emitting unit, thereby reducing the difference in the side wall light emission ratio of the light-emitting units of different light-emitting colors in the same display panel, thereby reducing the color deviation of the display screen of the display panel in the side view, and ensuring the user experience.

[0039] In the embodiment of the present application, since the light emitting layer 30 is located on the side of the first semiconductor layer 20 away from the reflective layer 10, the light emitted by the light emitting layer 30 will eventually be emitted through the second semiconductor layer 40. Then, by setting the area of ​​the overlapping area of ​​the orthographic projection of the second semiconductor layer 40 on the reflective layer 10 and the orthographic projection of the light emitting layer 30 on the reflective layer 10 to be smaller than the area of ​​the reflective layer 10, as shown in FIG. Figure 2 As shown, the light emitted by the light-emitting layer 30 is reflected by the top wall of the second semiconductor layer 40 close to the side wall, and then is incident on the reflective layer 10, that is, the light emitted from the side wall of the second semiconductor layer 40 is incident on the reflective layer 10, and after being reflected by the reflective layer 10, the light is emitted from the light-emitting surface of the light-emitting unit instead of from the side wall of the light-emitting unit, thereby reducing the probability of light being emitted from the side wall of the light-emitting unit and reducing the side wall light emission ratio of the light-emitting unit.

[0040] For existing display panels, the side wall light emission ratio of the blue light emitting unit and the green light emitting unit in the display panel is often greater than the side wall light emission ratio of the red light emitting unit. Therefore, by setting the blue light emitting unit and the green light emitting unit to adopt the above-mentioned structure, the side wall light emission ratio of the blue light emitting unit and the green light emitting unit can be reduced, that is, the difference in the side wall light emission ratio of the light emitting units of different light emitting colors in the same display panel can be reduced. Therefore, in the case of side viewing, the color deviation of the display screen of the display panel can be reduced, and the user experience can be guaranteed.

[0041] In one embodiment of the present application, in a direction parallel to the reflective layer 10 , at least one boundary line of the orthographic projection of the second semiconductor layer 40 on the reflective layer 10 and an adjacent boundary line of the orthographic projection of the light emitting layer 30 on the reflective layer 10 have a first set distance.

[0042] In the embodiment of the present application, the orthographic projection of the first semiconductor layer 20 on the reflective layer 10 overlaps with the reflective layer 10, and the orthographic projection of the light-emitting layer 30 on the reflective layer 10 overlaps with the reflective layer 10, that is, the areas of the stacked reflective layer 10, the first semiconductor layer 20 and the light-emitting layer 30 are the same.

[0043] like Figure 3 As shown, Figure 1 As shown in the top view schematic diagram of the light-emitting unit, in the embodiment of the present application, in the direction parallel to the reflective layer 10, at least one boundary line of the orthographic projection of the second semiconductor layer 40 on the reflective layer 10 and an adjacent boundary line of the orthographic projection of the light-emitting layer 30 on the reflective layer 10 have a first set distance d1.

[0044] With such a configuration, the area of ​​the overlapping region of the orthographic projection of the second semiconductor layer 40 on the reflective layer 10 and the orthographic projection of the light-emitting layer 30 on the reflective layer 10 can be smaller than the area of ​​the reflective layer 10, so that after the light emitted by the light-emitting layer 30 is emitted through the side wall of the second semiconductor layer 40 close to the boundary line, the light will be incident on the reflective layer 10, and will not be directly emitted from the side wall of the second semiconductor layer 40, thereby reducing the amount of light directly emitted from one side wall of the second semiconductor layer 40, and reducing the side wall light emission ratio of the light-emitting unit. In addition, the difference in the side wall light emission ratio of light-emitting units of different light-emitting colors in the same display panel can be reduced, so that in the case of side view, the color deviation of the display screen of the display panel can be reduced, and the user experience can be guaranteed.

[0045] In one embodiment of the present application, the orthographic projection of the second semiconductor layer 40 includes a first boundary line, a second boundary line, and a third boundary line connected in sequence, and the orthographic projection of the light-emitting layer 30 includes a fourth boundary line adjacent to the first boundary line, a fifth boundary line adjacent to the second boundary line, and a sixth boundary line adjacent to the third boundary line; in a direction parallel to the reflective layer 10, there is a first set distance d1 between the first boundary line and the fourth boundary line, a second set distance d2 between the second boundary line and the fifth boundary line, and a third set distance d3 between the third boundary line and the sixth boundary line.

[0046] In the embodiment of the present application, as shown in FIG. 3 , at least part of the orthographic projections of three adjacent sides of the second semiconductor layer 40 fall within the orthographic projection of the light-emitting layer 30 , and three adjacent sides of the second semiconductor layer 40 are the first boundary line, the second boundary line and the third boundary line of the orthographic projection of the second semiconductor layer 40 .

[0047] In the embodiment of the present application, by setting the three boundary lines of the orthographic projection of the second semiconductor layer 40 to have a set distance from the adjacent boundary lines of the orthographic projection of the light-emitting layer 30, the area of ​​the overlapping region between the orthographic projection of the second semiconductor layer 40 on the reflective layer 10 and the orthographic projection of the light-emitting layer 30 on the reflective layer 10 can be further made smaller than the area of ​​the reflective layer 10, so that after the light emitted by the light-emitting layer 30 is emitted through the side wall of the second semiconductor layer 40 close to the above three boundary lines, the light will be incident on the reflective layer 10, and after being reflected by the reflective layer 10, the light will be emitted from the light-emitting surface of the light-emitting unit instead of from the side wall of the light-emitting unit, thereby reducing the probability of light being emitted from the side wall of the light-emitting unit, further reducing the side wall light emission ratio of the light-emitting unit, and reducing the intensity of the light emitted from the side wall of the light-emitting unit.

[0048] This can reduce the difference in side wall light output ratios of light-emitting units of different light-emitting colors in the same display panel, thereby reducing the degree of color deviation of the display screen of the display panel when viewed from the side, thereby ensuring the user experience.

[0049] In one embodiment of the present application, the value ranges of the first set distance d1, the second set distance d2 and the third set distance d3 are all: greater than 0 and less than or equal to half of the first size; the first size is the size of the light-emitting layer 30 in the first direction.

[0050] In the embodiment of the present application, the value ranges of the first set distance d1, the second set distance d2 and the third set distance d3 are all greater than 0 and less than or equal to half of the first size, wherein the first size is the size of the light-emitting layer 30 in the first direction, such as Figure 2 As shown, the first dimension is the width of the light emitting layer 30 .

[0051] Optionally, the value ranges of the first setting distance d1, the second setting distance d2 and the third setting distance d3 are all greater than 0 and less than or equal to 10 microns. Optionally, the value ranges of the first setting distance d1, the second setting distance d2 and the third setting distance d3 are all greater than or equal to 3 microns and less than or equal to 10 microns.

[0052] Optionally, the values ​​of the first set distance d1, the second set distance d2 and the third set distance d3 can be equal or unequal. Technicians in this technical field can set the values ​​of the first set distance d1, the second set distance d2 and the third set distance d3 according to actual needs.

[0053] In one embodiment of the present application, the values ​​of the first set distance d1, the second set distance d2, and the third set distance d3 are all 3 microns. By testing the light-emitting unit provided in the embodiment of the present application and the light-emitting unit in the prior art, the size of the light-emitting unit provided in the embodiment of the present application is the same as the size of the light-emitting unit in the prior art. After testing, it is found that the side wall light emission ratio of the light-emitting unit provided in the embodiment of the present application is 2.7%, and the side wall light emission ratio of the light-emitting unit in the prior art is 12.2%. Compared with the light-emitting unit in the prior art, the side wall light emission ratio of the light-emitting unit provided in the embodiment of the present application is greatly reduced.

[0054] For existing display panels, the side wall light emission ratio of the blue light emitting unit and the green light emitting unit in the display panel is often greater than the side wall light emission ratio of the red light emitting unit. For example, when the light emitting units are of the same size, the side wall light emission ratio of the red light emitting unit is 2.5%. Therefore, by setting the blue light emitting unit and the green light emitting unit to adopt the above structure, the side wall light emission ratio of the blue light emitting unit and the green light emitting unit can be reduced, so that the side wall light emission ratio of the blue light emitting unit and the green light emitting unit is reduced to 2.7%, thereby reducing the difference in the side wall light emission ratio of the light emitting units of different light emitting colors in the same display panel, so that when viewed from the side, the color deviation of the display screen of the display panel can be reduced, and the user experience can be guaranteed.

[0055] In one embodiment of the present application, the second semiconductor layer 40 includes a first portion 41 , which is provided with an electrode structure 411 for connecting to a driving backplane, and the first portion 41 protrudes from one end of the light emitting layer 30 in a first direction parallel to the reflective layer 10 .

[0056] In the present application embodiment, Figure 3 As shown, the second semiconductor layer 40 includes a first part 41, and the first part 41 is provided with an electrode structure 411 for connecting to the driving backplane. In a first direction parallel to the reflective layer 10, the first part 41 protrudes from one end of the light-emitting layer 30, thereby facilitating the connection of the subsequent light-emitting unit with the driving backplane.

[0057] In the embodiment of the present application, the reflective layer 10 of the light-emitting unit is also provided with an electrode structure 411, and the electrode structure 411 is connected to one of the positive electrode and the negative electrode of the driving backplane. Correspondingly, the electrode structure 411 of the reflective layer 10 is connected to the other of the positive electrode and the negative electrode of the driving backplane, thereby realizing the electrical connection between the light-emitting unit and the driving backplane.

[0058] Optionally, in the embodiment of the present application, the reflective layer 10 can be made of a conductive material with high reflectivity, so that the reflective layer 10 has both the functions of reflecting light and conducting electricity. The reflective layer 10 can be directly connected to the other of the positive electrode and the negative electrode of the driving backplane, thereby avoiding the need to set the electrode structure 411 on the reflective layer 10, thereby simplifying the structure of the light-emitting unit, facilitating the thinning of the light-emitting unit, improving the production efficiency of the light-emitting unit, and reducing the production cost of the light-emitting unit.

[0059] It should be noted that, in order to intuitively display the structure of the second semiconductor layer 40, Figure 2 In the figure, the second semiconductor layer 40 is divided into a first part 41 and a second part 42 by a dotted line. In the actual product, there is no dotted line. Similarly, the electrode structure 411 is indicated by a dotted line due to the obstruction of the first part 41 .

[0060] In one embodiment of the present application, the second semiconductor layer 40 includes a second portion 42 connected to the first portion 41, the orthographic projection of the light-emitting layer 30 on the reflective layer 10 covers the orthographic projection of the second portion 42 on the reflective layer 10, and the orthographic projection of the first semiconductor layer 20 on the reflective layer 10 overlaps with the orthographic projection of the light-emitting layer 30 on the reflective layer 10.

[0061] In the embodiment of the present application, the orthographic projection of the first semiconductor layer 20 on the reflective layer 10 overlaps with the orthographic projection of the light-emitting layer 30 on the reflective layer 10, that is, the areas of the stacked first semiconductor layer 20 and the light-emitting layer 30 are the same. Figure 3 As shown, the area of ​​the second part 42 of the second semiconductor layer 40 is smaller than the area of ​​the light-emitting layer 30. Specifically, the orthographic projection of the light-emitting layer 30 on the reflective layer 10 covers the orthographic projection of the second part 42 on the reflective layer 10, thereby ensuring that the light emitted by the light-emitting layer 30 will be incident on the reflective layer 10 after being reflected by the second part 42, that is, the outgoing light from the side wall in the second part 42 will be incident on the reflective layer 10, and after being reflected by the reflective layer 10, the light will be emitted from the light-emitting surface of the light-emitting unit instead of from the side wall of the light-emitting unit, thereby reducing the probability of light being emitted from the side wall of the light-emitting unit, reducing the side wall light emission ratio of the light-emitting unit, and reducing the intensity of the outgoing light from the side wall of the light-emitting unit.

[0062] In the present application embodiment, Figure 1 and Figure 3As shown, relative to the light-emitting layer 30, the three sides of the second portion 42 are all indented toward the center, that is, in the direction perpendicular to the emission layer 10, the three side portions of the light-emitting layer 30 are not directly opposite to the second portion 42, and during the operation of the light-emitting unit, no current will pass through the three side portions of the light-emitting layer 30. In the case where there are defects in the three side portions of the light-emitting layer 30, since no current passes through the three side portions, the internal quantum efficiency of the light-emitting unit will not be affected, thereby ensuring the performance of the light-emitting unit.

[0063] It should be noted that during the preparation of the light-emitting unit, the etching process may cause defects in the side portion of the light-emitting layer 30. The light-emitting unit provided in the embodiment of the present application can avoid defects in the side portion of the light-emitting layer 30 and affect the internal quantum efficiency of the light-emitting unit, thereby ensuring the performance of the light-emitting unit.

[0064] In one embodiment of the present application, the second semiconductor layer 40 includes a second portion 42 connected to the first portion 41, the orthographic projection of the second portion 42 on the reflective layer 10 covers the orthographic projection of the light-emitting layer 30 on the reflective layer 10, and the orthographic projection of the first semiconductor layer 20 on the reflective layer 10 covers the orthographic projection of the light-emitting layer 30 on the reflective layer 10.

[0065] like Figure 4 As shown, it is a schematic diagram of the structure of another light-emitting unit provided in an embodiment of the present application; Figure 5 As shown, Figure 4 In the embodiment of the present application, the orthographic projection of the first semiconductor layer 20 on the reflective layer 10 overlaps with the reflective layer 10, and the orthographic projection of the first semiconductor layer 20 on the reflective layer 10 covers the orthographic projection of the light-emitting layer 30 on the reflective layer 10, that is, the area of ​​the first semiconductor layer 20 is equal to the area of ​​the reflective layer 10, and the area of ​​the first semiconductor layer 20 and the area of ​​the reflective layer 10 are both larger than the area of ​​the light-emitting layer 30.

[0066] like Figure 5 As shown, the area of ​​the second semiconductor layer 40 is larger than the area of ​​the light-emitting layer 30, and the orthographic projection of the second portion 42 on the reflective layer 10 covers the orthographic projection of the light-emitting layer 30 on the reflective layer 10. The three boundary lines of the orthographic projection of the second semiconductor layer 40 are all at a set distance from the adjacent boundary lines of the orthographic projection of the light-emitting layer 30, so as to ensure that the light emitted by the light-emitting layer 30 will be incident on the reflective layer 10 after being reflected by the second portion 42, that is, the light emitted from the side wall in the second portion 42 will be incident on the reflective layer 10, and after being reflected by the reflective layer 10, the light will be emitted from the light-emitting surface of the light-emitting unit instead of from the side wall of the light-emitting unit, so as to reduce the probability of light being emitted from the side wall of the light-emitting unit, reduce the light-emitting ratio of the side wall of the light-emitting unit, and reduce the intensity of the light emitted from the side wall of the light-emitting unit.

[0067] It should be noted that, in order to intuitively display the structure of the second semiconductor layer 40, Figure 5 In the figure, the second semiconductor layer 40 is divided into a first part 41 and a second part 42 by a dotted line. In the actual product, there is no dotted line. Similarly, the electrode structure 411 is indicated by a dotted line due to the obstruction of the first part 41 .

[0068] In one embodiment of the present application, the first semiconductor layer 20 is a P-type semiconductor layer, which is located on one side of the reflective layer 10, and the second semiconductor layer 40 is an N-type semiconductor layer, which is located on a side of the light-emitting layer 30 away from the P-type semiconductor layer. The area of ​​the overlapping region between the orthographic projection of the N-type semiconductor layer on the reflective layer 10 and the orthographic projection of the light-emitting layer 30 on the reflective layer 10 is smaller than the area of ​​the reflective layer 10.

[0069] like Figure 6 , which is a schematic diagram of a flip-chip structure light-emitting unit provided in an embodiment of the present application. In the embodiment of the present application, the P-type semiconductor layer is located on one side of the reflective layer 10, the light-emitting layer 30 is located on the side of the P-type semiconductor layer away from the reflective layer 10, and the N-type semiconductor layer is located on the side of the light-emitting layer 30 away from the P-type semiconductor layer. In a direction parallel to the reflective layer 10, the first portion 41 of the second semiconductor layer 40 protrudes from the light-emitting layer 30. Figure 6 In the figure, the second semiconductor layer 40 is divided into a first part 41 and a second part 42 by a dotted line. In the actual product, there is no dotted line.

[0070] In the embodiment of the present application, the first semiconductor layer 20 may include a multi-layer structure, and the material of each layer includes a P-type semiconductor material. Optionally, the first semiconductor layer 20 includes a first P-type sub-semiconductor layer 21 and a second P-type sub-semiconductor layer 22 .

[0071] Optionally, in an embodiment of the present application, the material used to make the first P-type sub-semiconductor layer 21 is P-type GaN (gallium nitride), the second P-type sub-semiconductor layer 22 is P-type AlGaN (aluminum gallium nitride), the light-emitting layer 30 is MQW (Multiple Quantum Well), and the material used to make the N-type semiconductor layer is N-type GaN (gallium nitride).

[0072] In one embodiment of the present application, the first semiconductor layer 20 is an N-type semiconductor layer, which is located on one side of the reflective layer 10, and the second semiconductor layer 40 is a P-type semiconductor layer, which is located on a side of the light-emitting layer 30 away from the N-type semiconductor layer. The area of ​​the overlapping region between the orthographic projection of the P-type semiconductor layer on the reflective layer 10 and the orthographic projection of the light-emitting layer 30 on the reflective layer 10 is smaller than the area of ​​the reflective layer 10.

[0073] like Figure 7, which is a schematic diagram of a structure of a positive structure light-emitting unit provided in an embodiment of the present application. In the embodiment of the present application, the N-type semiconductor layer is located on one side of the reflective layer 10, the light-emitting layer 30 is located on the side of the N-type semiconductor layer away from the reflective layer 10, and the P-type semiconductor layer is located on the side of the light-emitting layer 30 away from the N-type semiconductor layer, and the area of ​​the overlapping region of the orthographic projection of the P-type semiconductor layer on the reflective layer 10 and the orthographic projection of the light-emitting layer 30 on the reflective layer 10 is smaller than the area of ​​the reflective layer 10.

[0074] In the embodiment of the present application, the second semiconductor layer 40 may include a multi-layer structure, and the material of each layer includes a P-type semiconductor material. Optionally, the second semiconductor layer 40 includes a first P-type semiconductor layer 401 and a second P-type semiconductor layer 402 .

[0075] Based on the same inventive concept, an embodiment of the present application provides a display panel, including: the light-emitting unit provided by the above embodiments.

[0076] In the embodiments of the present application, for the structure, principle and technical effect of the light-emitting unit, please refer to the description of each embodiment above and will not be repeated here.

[0077] In one embodiment of the present application, the display panel includes a red light emitting unit, a green light emitting unit, and a blue light emitting unit, and the green light emitting unit and the blue light emitting unit are the light emitting units provided by the above embodiments. The area of ​​the overlapping region between the orthographic projection of the second semiconductor layer of the red light emitting unit and the orthographic projection of the light emitting layer is equal to the area of ​​the reflective layer of the red light emitting unit, and is equal to the area of ​​the overlapping region between the orthographic projection of the second semiconductor layer and the orthographic projection of the light emitting layer in the green light emitting unit and the blue light emitting unit.

[0078] In the present application embodiment, Figure 8 , which is a schematic diagram of the structure of a light-emitting unit in a display panel, specifically a schematic diagram of the structure of a red light-emitting unit, and the structures of the green light-emitting unit and the blue light-emitting unit refer to the light-emitting units provided in the above embodiments. The red light-emitting unit includes a reflective layer 10, a first semiconductor layer 20, a light-emitting layer 30, a second semiconductor layer 40 and an electrode layer 50 stacked in sequence. The area of ​​the overlapping region of the orthographic projection of the second semiconductor layer 40 and the orthographic projection of the light-emitting layer 30 is equal to the area of ​​the reflective layer 10 of the red light-emitting unit, and is equal to the area of ​​the overlapping region of the orthographic projection of the second semiconductor layer 40 and the orthographic projection of the light-emitting layer 30 in the green light-emitting unit and the blue light-emitting unit.

[0079] That is, in the same display panel, the area of ​​the overlapping region of the orthographic projection of the second semiconductor layer 40 of the red light-emitting unit and the orthographic projection of the light-emitting layer 30 is equal to the area of ​​the overlapping region of the orthographic projection of the second semiconductor layer 40 in the green light-emitting unit and the blue light-emitting unit and the orthographic projection of the light-emitting layer 30. Thus, it can be ensured that the size of the effective light-emitting area of ​​the light-emitting layer 30 in the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit is consistent, so that the side wall light-emitting ratio of the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit tends to be consistent, thereby reducing the difference in the side wall light-emitting ratio of the light-emitting units of different light-emitting colors in the same display panel, thereby reducing the degree of color deviation of the display screen of the display panel in the case of side view, and ensuring the user experience.

[0080] Optionally, in the embodiment of the present application, the first semiconductor layer 20 of the red light-emitting unit includes a first N-type sublayer 201 and a second N-type sublayer 202, the first N-type sublayer 201 is made of N-type AlGaInP (aluminum gallium indium phosphide), and the second N-type sublayer 202 is made of N-type AlInP (aluminum indium phosphide). The light-emitting layer 30 of the red light-emitting unit is MQW (Multiple Quantum Well). The second semiconductor layer 40 of the red light-emitting unit includes a first P-type sublayer 403, a second P-type sublayer 404 and a third P-type sublayer 405, the first P-type sublayer 403 is made of P-type AlInP (aluminum indium phosphide), the second P-type sublayer 404 is made of P-type AlGaInP (aluminum gallium indium phosphide), and the third P-type sublayer 405 is made of P-type GaN (gallium nitride). The electrode layer 50 of the red light-emitting unit is made of ITO (indium tin oxide).

[0081] Based on the same inventive concept, an embodiment of the present application provides a display device, including the display panel provided by the above embodiments.

[0082] In the embodiments of the present application, for the structure, principle and technical effect of the light-emitting unit in the display panel, please refer to the description of each embodiment above and will not be repeated here.

[0083] By applying the embodiments of the present application, at least the following beneficial effects can be achieved:

[0084] In the light-emitting unit provided in the embodiment of the present application, by setting the area of ​​the overlapping region of the orthographic projection of the second semiconductor layer 40 on the reflective layer 10 and the orthographic projection of the light-emitting layer 30 on the reflective layer 10 to be smaller than the area of ​​the reflective layer 10, the light emitted by the light-emitting layer 30 is reflected by the part of the top wall close to the side wall in the second semiconductor layer 40, and then the light is incident on the reflective layer 10. After being reflected by the reflective layer 10, the light is emitted from the light-emitting surface of the light-emitting unit instead of from the side wall of the light-emitting unit, thereby reducing the probability of light being emitted from the side wall of the light-emitting unit, reducing the side wall light emission ratio of the light-emitting unit, and reducing the intensity of the light emitted from the side wall of the light-emitting unit, thereby reducing the difference in the side wall light emission ratio of the light-emitting units of different light-emitting colors in the same display panel, thereby reducing the color deviation of the display screen of the display panel in the side view, and ensuring the user experience.

[0085] Those skilled in the art will appreciate that the various operations, methods, steps, measures, and schemes in the processes discussed in this application may be alternated, altered, combined, or deleted. Further, other steps, measures, and schemes in the various operations, methods, and processes discussed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted. Further, the steps, measures, and schemes in the prior art that are similar to those disclosed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted.

[0086] In the description of the present application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0087] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0088] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0089] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0090] The above is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A light emitting unit, characterized in that: include: Reflective layer; A first semiconductor layer, located on one side of the reflective layer; a light emitting layer, located on a side of the first semiconductor layer away from the reflective layer; a second semiconductor layer, located on a side of the light-emitting layer away from the reflective layer, wherein an area of ​​an overlapped region of an orthographic projection of the second semiconductor layer on the reflective layer and an orthographic projection of the light-emitting layer on the reflective layer is smaller than an area of ​​the reflective layer; In a direction parallel to the reflective layer, a first set distance exists between at least one boundary line of the orthographic projection of the reflective layer and an adjacent boundary line of the light emitting layer in the orthographic projection of the reflective layer; The second semiconductor layer includes a first portion, the first portion is provided with an electrode structure for connecting to a driving backplane, and the first portion protrudes from one end of the light-emitting layer in a first direction parallel to the reflective layer.

2. The light emitting unit according to claim 1, characterized in that: The orthographic projection of the second semiconductor layer includes a first boundary line, a second boundary line and a third boundary line connected in sequence, and the orthographic projection of the light emitting layer includes a fourth boundary line adjacent to the first boundary line, a fifth boundary line adjacent to the second boundary line and a sixth boundary line adjacent to the third boundary line; In a direction parallel to the reflective layer, the first boundary line has the first set distance from the fourth boundary line, the second boundary line has the second set distance from the fifth boundary line, and the third boundary line has the third set distance from the sixth boundary line.

3. The light emitting unit according to claim 2, characterized in that: The value ranges of the first set distance, the second set distance and the third set distance are all greater than 0 and less than or equal to half of the first size; the first size is the size of the light-emitting layer in the first direction.

4. The light emitting unit according to claim 1, characterized in that: The second semiconductor layer includes a second part connected to the first part, the orthographic projection of the light-emitting layer on the reflective layer covers the orthographic projection of the second part on the reflective layer, and the orthographic projection of the first semiconductor layer on the reflective layer overlaps with the orthographic projection of the light-emitting layer on the reflective layer.

5. The light emitting unit according to claim 1, characterized in that: The second semiconductor layer includes a second portion connected to the first portion, the orthographic projection of the second portion on the reflective layer covers the orthographic projection of the light-emitting layer on the reflective layer, and the orthographic projection of the first semiconductor layer on the reflective layer covers the orthographic projection of the light-emitting layer on the reflective layer.

6. The light emitting unit according to claim 1, characterized in that: The first semiconductor layer is a P-type semiconductor layer, and the P-type semiconductor layer is located on one side of the reflective layer. The second semiconductor layer is an N-type semiconductor layer, and the N-type semiconductor layer is located on a side of the light-emitting layer away from the P-type semiconductor layer. The area of ​​an overlapping region of an orthographic projection of the N-type semiconductor layer on the reflective layer and an orthographic projection of the light-emitting layer on the reflective layer is smaller than an area of ​​the reflective layer.

7. The light emitting unit according to claim 1, characterized in that: The first semiconductor layer is an N-type semiconductor layer, which is located on one side of the reflective layer; the second semiconductor layer is a P-type semiconductor layer, which is located on a side of the light-emitting layer away from the N-type semiconductor layer; and an overlapping area of ​​an orthographic projection of the P-type semiconductor layer on the reflective layer and an orthographic projection of the light-emitting layer on the reflective layer is smaller than an area of ​​the reflective layer.

8. A display panel, characterized in that: include: The light-emitting unit according to any one of claims 1 to 7.

9. The display panel according to claim 8, characterized in that: Comprising a red light emitting unit, a green light emitting unit and a blue light emitting unit, wherein the green light emitting unit and the blue light emitting unit are the light emitting units described in any one of claims 1 to 7; The area of ​​the overlapping area between the orthographic projection of the second semiconductor layer and the orthographic projection of the light-emitting layer of the red light-emitting unit is equal to the area of ​​the reflective layer of the red light-emitting unit, and is equal to the area of ​​the overlapping area between the orthographic projection of the second semiconductor layer and the orthographic projection of the light-emitting layer in the green light-emitting unit and the blue light-emitting unit.

10. A display device, characterized in that: include: The display panel according to any one of claims 8 to 9.

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