Semiconductor package device and method of manufacturing the same

Abstract

The present disclosure relates to a semiconductor packaging device and a manufacturing method thereof. The semiconductor packaging device comprises a first circuit layer, a first surface of the first circuit layer is provided with at least two conductive pads, a surface of each conductive pad has a recess structure, a bottom of the recess structure has a horizontal part, and the corresponding horizontal parts of the conductive pads are located on the same horizontal plane. In the semiconductor packaging device and the manufacturing method thereof, the conductive pads on the first circuit layer have recess structures, the horizontal parts of the bottoms of the recess structures are located on the same horizontal plane, and the horizontal parts of the recess structures can be electrically connected with conductive protrusions on a surface of a second circuit layer, thereby eliminating the influence of the inconsistent thicknesses of the conductive pads on the first circuit layer, avoiding various connection problems caused by the inconsistent thicknesses, and being beneficial to improving product yield.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor packaging, and in particular to a semiconductor packaging device and a manufacturing method thereof. BACKGROUND

[0002] In high-level packaging products (such as 2.5D packaging and 3D packaging), in order to realize fine lines, the substrate is usually bonded with a redistribution structure. However, since the thickness of the conductive pads on the substrate is usually inconsistent (the degree of inconsistency in thickness can exceed 20%), how to realize the electrical connection between the substrate and the redistribution structure becomes a problem to be solved.

[0003] Figure 1 is a schematic diagram of a semiconductor packaging device in the prior art. As shown in Figure 1 , the thickness of the plurality of conductive pads 13 on the surface of the substrate 11 is inconsistent. When the conductive pads 13 on the surface of the substrate 11 are electrically connected to the copper pillars 14 on the surface of the redistribution structure 12 through solder 15, the above-mentioned inconsistency in thickness will cause various connection problems, such as false welding, extrusion and overflow of the solder 15, damage or deformation of the copper pillars 14, slippage at the top of the copper pillars 14, or reduction of the bonding area, etc. For details, please refer to Figure 1 .

[0004] Therefore, it is necessary to propose a new technical scheme for connecting the substrate and the redistribution structure. SUMMARY

[0005] The present disclosure provides a semiconductor packaging device and a manufacturing method thereof.

[0006] In a first aspect, the present disclosure provides a semiconductor packaging device, comprising:

[0007] a first circuit layer, a first surface of the first circuit layer being provided with at least two conductive pads, each of the conductive pads having a concave structure on the surface thereof, the bottom of the concave structure having a horizontal portion, and the horizontal portions of the conductive pads corresponding to each other being located on the same horizontal plane.

[0008] In some optional embodiments, the concave structure is formed by pressing a first surface of the conductive pad with a press head, the press head having a horizontal bottom end for forming the horizontal portion.

[0009] In some optional embodiments, a sharp portion is arranged below the horizontal bottom end, and the bottom of the concave structure has a sunken portion, the sharp portion being used to form the sunken portion.

[0010] In some optional embodiments, the ratio of the thickness of the conductive pad to the depth of the corresponding concave structure is greater than 1.25 and less than 1.6.

[0011] In some alternative embodiments, a ratio of a height of the pressure head to a diameter of the horizontal bottom end of the pressure head is greater than 0.25 and less than 1.

[0012] In some alternative embodiments, a ratio of a thickness of a portion of the conductive pad affected by compressive stress of the pressure head to a remaining metal thickness of the conductive pad is greater than 0.02 and less than 0.32.

[0013] In some alternative embodiments, the at least two conductive pads correspond to the recessed structures having at least two different depths.

[0014] In some alternative embodiments, the semiconductor package device further comprises a second circuit layer;

[0015] A surface of the second circuit layer is provided with conductive protrusions, ends of the conductive protrusions being electrically connected to the horizontal portions of the recessed structures.

[0016] In some alternative embodiments, the ends of the conductive protrusions are electrically connected to the horizontal portions of the recessed structures through solder; or

[0017] The horizontal portions are provided with seed layers, the seed layers are provided with solder layers, and the ends of the conductive protrusions are electrically connected to the solder layers through solder.

[0018] In some alternative embodiments, a bottom filler or a molding material is provided between the second circuit layer and the first circuit layer.

[0019] In some alternative embodiments, the bottom filler or the molding material is injected through a via on the second circuit layer.

[0020] In some alternative embodiments, the conductive protrusions comprise at least one of a conductive pillar, a solder bump, and a conductive bump.

[0021] In some alternative embodiments, a second surface of the first circuit layer is provided with electrical connectors, the electrical connectors comprising at least one of a conductive contact, a conductive ball, and a conductive block.

[0022] In some alternative embodiments, a longitudinal cross-section of the conductive pad is square, circular, or irregularly shaped.

[0023] In some alternative embodiments, different conductive pads are connected through wires or surface mount devices, or different conductive pads are not connected.

[0024] In some alternative embodiments, a bottom of the sunken portion is higher than the first surface of the first circuit layer.

[0025] In a second aspect, the present disclosure provides a method for manufacturing a semiconductor package device, comprising:

[0026] pressing at least two pressing heads of an imprinting tool into at least two conductive pads on a surface of a first circuit layer to form a recess structure on a surface of each of the conductive pads, wherein a bottom of the recess structure has a horizontal part, and the horizontal part corresponding to each of the conductive pads is located on a same horizontal plane;

[0027] electrically connecting an end of a conductive protrusion on a surface of a second circuit layer with the horizontal part of the recess structure to obtain the semiconductor package device.

[0028] In some optional embodiments, the electrically connecting the end of the conductive protrusion on the surface of the second circuit layer with the horizontal part of the recess structure comprises:

[0029] forming a seed layer on the horizontal part, and forming a solder layer on the seed layer;

[0030] electrically connecting the end of the conductive protrusion with the solder layer through solder.

[0031] In some optional embodiments, the method further comprises:

[0032] filling a bottom filler or a molding material between the second circuit layer and the first circuit layer.

[0033] In the semiconductor package device and the method for manufacturing the semiconductor package device provided by the present disclosure, the conductive pads on the first circuit layer have recess structures, and the horizontal parts of the bottoms of the recess structures are located on the same horizontal plane. The conductive protrusion on the surface of the second circuit layer can be electrically connected with the horizontal part of the recess structure, which eliminates the influence of the inconsistent thickness of the conductive pads on the first circuit layer, avoids various connection problems caused by the inconsistent thickness, and is beneficial to improving product yield. BRIEF DESCRIPTION OF DRAWINGS

[0034] Other features, objects, and advantages of the present disclosure will become more apparent from the following detailed description of non-limiting embodiments, read in conjunction with the accompanying drawings:

[0035] Figure 1 is a schematic diagram of a semiconductor package device in the prior art;

[0036] Figures 2-8 is a first schematic diagram to a seventh schematic diagram of a semiconductor package device according to an embodiment of the present disclosure;

[0037] Figures 9-12 is a schematic diagram of a method for manufacturing a semiconductor package device according to an embodiment of the present disclosure.

[0038] SYMBOL DESCRIPTION:

[0039] 11, substrate; 12, redistribution structure; 13, conductive pad; 14, copper pillar; 15, solder; 100, first wiring layer; 110, conductive pad; 111, seed layer; 112, solder layer; 120, recess structure; 130, horizontal portion; 140, sinking portion; 190, electrical connection; 191, conductive contact; 192, conductive ball; 193, conductive block; 200, imprinting jig; 210, press head; 220, horizontal bottom end; 230, pointed portion; 300, second wiring layer; 310, conductive protrusion; 311, conductive pillar; 312, solder bump; 313, conductive bump; 320, via hole; 400, solder; 500, underfill material; 910, carrier; 920, nozzle. DETAILED DESCRIPTION

[0040] The specific embodiments of the present application will be described below with reference to the drawings and examples, and those skilled in the art can easily understand the technical problems solved by the present application and the technical effects generated by the content recorded in the specification. It should be understood that the specific embodiments described herein are only used to explain the related application, and not to limit the application. In addition, only the parts related to the application are shown in the drawings for ease of description.

[0041] It should be noted that the structures, proportions, sizes, etc. shown in the drawings of the specification are only used to cooperate with the content recorded in the specification for the understanding and reading of those skilled in the art, and are not used to limit the implementation conditions of the present application, so they do not have technical significance. Any modification of the structure, change of the proportion relationship or adjustment of the size, without affecting the effects and purposes that can be generated by the present application, should still fall within the scope of the technical content disclosed by the present application. At the same time, the terms such as "upper", "first", "second" and "one" used in the specification are only for the convenience of clear description, and not to limit the scope of the application, and the change or adjustment of the relative relationship without substantial change of the technical content is also considered as the implementation of the application.

[0042] It should also be noted that the embodiments of the present disclosure correspond to the longitudinal cross-section, which can be the front view direction cross-section, the transverse cross-section can be the right view direction cross-section, and the horizontal cross-section can be the upper view direction cross-section.

[0043] In addition, the embodiments in the present disclosure and the features in the embodiments can be combined with each other without conflict. The present disclosure will be described in detail below with reference to the drawings and in combination with the embodiments.

[0044] Figures 2-8 are the first to seventh schematic diagrams of a semiconductor package device according to embodiments of the present application.

[0045] AsFigure 2 As shown, the semiconductor packaging device in this embodiment includes a first circuit layer 100. The first circuit layer 100 may be a substrate. The first surface of the first circuit layer 100 (i.e., Figure 2 The upper surface of the middle is provided with at least two ( Figure 2 There are 5 conductive pads 110, but there can also be 2, 3, or 10, etc. Each conductive pad 110 has a recessed structure 120 on its surface. The bottom of the recessed structure 120 has a horizontal portion 130. The horizontal portions 130 of each conductive pad 110 are located on the same horizontal plane.

[0046] In this embodiment, as Figure 2 As shown, the recessed structure 120 can be formed by pressing a pressure head 210 into the first surface of the conductive pad 110. The pressure head 210 has a horizontal bottom end 220. The horizontal bottom end 220 is used to form a horizontal portion 130. A plurality of pressure heads 210 are located on the impression fixture 200, and each pressure head 210 can press into the conductive pad 110 below, thereby forming a recessed structure 120 on the conductive pad 110. Because the horizontal bottom ends 220 of the plurality of pressure heads 210 are located on the same horizontal plane, the horizontal portions 130 of the plurality of recessed structures 120 formed are also located on the same horizontal plane.

[0047] In the semiconductor packaging apparatus of this embodiment, the conductive pads 110 on the first circuit layer 100 have recessed structures 120. The horizontal portions 130 at the bottom of each recessed structure 120 are located on the same horizontal plane. They can be electrically connected to the conductive protrusions on the surface of the second circuit layer 300 through the horizontal portions 130 of the recessed structures 120. This eliminates the influence caused by the inconsistent thickness of the conductive pads 110 on the first circuit layer 100, avoids various connection problems caused by inconsistent thickness, and helps to improve product yield. The second circuit layer 300 can be a redistribution layer or a chip.

[0048] In this embodiment, as Figure 2 As shown, the width of the pressure head 210 gradually decreases from top to bottom, and its longitudinal cross-section is approximately trapezoidal. Correspondingly, the width of the recessed structure 120 also gradually decreases from top to bottom, and its longitudinal cross-section is also approximately trapezoidal. In other embodiments, the widths of the pressure head 210 and the recessed structure 120 may remain constant in the vertical direction.

[0049] In one example, such as Figure 2As shown, a pointed portion 230 is provided below the horizontal bottom end 220, and the bottom of the recessed structure 120 has a recessed portion 140, with the pointed portion 230 forming the recessed portion 140. During the pressing process, the pointed portion 230 can form a cut on the surface of the conductive pad 110, allowing the pressure head 210 to smoothly enter the interior of the conductive pad 110, thereby forming the recessed structure 120. In this example, the pointed portion 230 and the pressure head 210 are made of the same material (e.g., silicon carbide), and are integrally formed. In other examples, the pointed portion 230 and the pressure head 210 may be made of different materials.

[0050] In one example, such as Figure 4 As shown, the ratio of the thickness Tp of the conductive pad 110 to the depth D of the corresponding recessed structure 120 is greater than 1.25 and less than 1.6. The ratio of the height Ts of the pressure head 210 to the diameter Dt of the horizontal bottom end 220 of the pressure head 210 is greater than 0.25 and less than 1. The ratio of the thickness r of the portion of the conductive pad 110 affected by the compressive stress of the pressure head 210 to the remaining metal thickness Te of the conductive pad 110 is greater than 0.02 and less than 0.32. The portion of the conductive pad 110 affected by the compressive stress of the pressure head 210 refers to the portion of the conductive pad 110 where the crystal lattice changes under compressive stress. By ensuring the above numerical relationships, the semiconductor packaging device can meet the strength design requirements, thereby extending the service life of the semiconductor packaging device.

[0051] In one example, such as Figure 3 As shown, the semiconductor packaging device also includes a second circuit layer 300. The second circuit layer 300 can be a redistribution layer or a chip. Conductive protrusions 310 are provided on the surface of the second circuit layer 300, and the ends of the conductive protrusions 310 are electrically connected to the horizontal portion 130 of the recessed structure 120.

[0052] In one example, such as Figure 2 As shown, the recessed structures 120 corresponding to at least two conductive pads 110 have at least two different depths. The thickness of the rightmost conductive pad 110 is less than the thickness of the central conductive pad 110, and correspondingly, the depth of the recessed structure 120 corresponding to the rightmost conductive pad 110 is less than the depth of the recessed structure 120 corresponding to the central conductive pad 110. This facilitates the formation of multiple horizontal portions 130 on the same horizontal plane on multiple conductive pads 110 of different thicknesses, enabling smooth electrical connection between the first circuit layer 100 and the second circuit layer 300.

[0053] In one example, such as Figure 7 As shown on the right, the end of the conductive protrusion 310 is electrically connected to the horizontal portion 130 of the recessed structure 120 via solder 400. In another example, as... Figure 7As shown in the left part, the horizontal part 130 is provided with a seed layer 111, and the seed layer 111 is provided with a solder layer 112. The end of the conductive protrusion 310 is electrically connected to the solder layer 112 through the solder 400. The material of the seed layer 111 is, for example, nickel or titanium, and the material of the solder layer 112 is, for example, copper. The seed layer 111 can prevent metal diffusion, and is beneficial to prolong the service life of the semiconductor packaging device.

[0054] In one example, as shown in the left part of FIG. 1, the second circuit layer 300 is provided with a plurality of conductive protrusions 310. The conductive protrusions 310 can be conductive pillars 311, solder bumps 312 or conductive bumps 313. Figure 3 In one example, as shown in the left part of FIG. 1, the second circuit layer 300 is provided with a plurality of conductive protrusions 310. The conductive protrusions 310 can be conductive pillars 311, solder bumps 312 or conductive bumps 313.

[0055] In one example, as shown in the left part of FIG. 1, the second circuit layer 300 is provided with a plurality of conductive protrusions 310. The conductive protrusions 310 can be conductive pillars 311, solder bumps 312 or conductive bumps 313. Figure 6 In one example, as shown in the left part of FIG. 1, the second circuit layer 300 is provided with a plurality of conductive protrusions 310. The conductive protrusions 310 can be conductive pillars 311, solder bumps 312 or conductive bumps 313.

[0056] In one example, as shown in the left part of FIG. 1, the second circuit layer 300 is provided with a plurality of conductive protrusions 310. The conductive protrusions 310 can be conductive pillars 311, solder bumps 312 or conductive bumps 313. Figure 3 As shown in the left part of FIG. 1, the second surface of the first circuit layer 100 is provided with an electrical connector 190. As shown in the middle part of FIG. 1, the electrical connector 190 can be a conductive contact 191, a conductive ball 192 or a conductive block 193. Figure 5 As shown in the left part of FIG. 1, the second surface of the first circuit layer 100 is provided with an electrical connector 190. As shown in the middle part of FIG. 1, the electrical connector 190 can be a conductive contact 191, a conductive ball 192 or a conductive block 193.

[0057] In one example, the longitudinal section of the conductive pad 110 can be square, circular or irregular.

[0058] In one example, different conductive pads 110 can be connected through wires or surface mount technology (SMT) devices. In addition, different conductive pads 110 can also be connected to each other.

[0059] In one example, as shown in the left part of FIG. 1, the bottom of the sunken part 140 is higher than the first surface of the first circuit layer 100. In another example, as shown in the middle part of FIG. 1, the bottom of the sunken part 140 is flush with the first surface of the first circuit layer 100. In yet another example, as shown in the right part of FIG. 1, the bottom of the sunken part 140 is lower than the first surface of the first circuit layer 100. Figure 8 In one example, as shown in the left part of FIG. 1, the bottom of the sunken part 140 is higher than the first surface of the first circuit layer 100. In another example, as shown in the middle part of FIG. 1, the bottom of the sunken part 140 is flush with the first surface of the first circuit layer 100. In yet another example, as shown in the right part of FIG. 1, the bottom of the sunken part 140 is lower than the first surface of the first circuit layer 100. Figure 8 In one example, as shown in the left part of FIG. 1, the bottom of the sunken part 140 is higher than the first surface of the first circuit layer 100. In another example, as shown in the middle part of FIG. 1, the bottom of the sunken part 140 is flush with the first surface of the first circuit layer 100. In yet another example, as shown in the right part of FIG. 1, the bottom of the sunken part 140 is lower than the first surface of the first circuit layer 100. Figure 8 In one example, as shown in the left part of FIG. 1, the bottom of the sunken part 140 is higher than the first surface of the first circuit layer 100. In another example, as shown in the middle part of FIG. 1, the bottom of the sunken part 140 is flush with the first surface of the first circuit layer 100. In yet another example, as shown in the right part of FIG. 1, the bottom of the sunken part 140 is lower than the first surface of the first circuit layer 100.

[0060] In one example, the dielectric material in the first circuit layer 100 or the second circuit layer 300 can be organic, such as polyamide (PA), polyimide (PI), epoxy, poly-p-phenylene benzobisoxazole (PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film), etc., or inorganic, such as silicon (Si), glass, ceramic, silicon oxide, silicon nitride, tantalum oxide, etc.

[0061] The embodiment also provides a method for manufacturing a semiconductor packaging device. As shown in Figures 9-12 the method comprises the following steps:

[0062] First, press at least two pressing heads 210 of the imprinting tool 200 into at least two conductive pads 110 on the surface of the first circuit layer 100 to form a recess structure 120 on the surface of each conductive pad 110, wherein the bottom of the recess structure 120 has a horizontal part 130, and the horizontal part 130 corresponding to each conductive pad 110 is located on the same horizontal plane. This step can refer to Figure 9 .

[0063] Second, electrically connect the end of the conductive protrusion 310 on the surface of the second circuit layer 300 with the horizontal part 130 of the recess structure 120 to obtain the semiconductor packaging device.

[0064] In one example, the step of electrically connecting the end of the conductive protrusion 310 on the surface of the second circuit layer 300 with the horizontal part 130 of the recess structure 120 can further comprise: first, as shown in Figure 10 , forming a seed layer 111 on the horizontal part 130 of the conductive pad 110, and forming a solder layer 112 on the seed layer 111. Second, as shown in Figure 11 , moving the second circuit layer 300 by the carrier 910, and electrically connecting the end of the conductive protrusion 310 with the solder layer 112 through the solder 400.

[0065] In one example, the method can further comprise: as shown in Figure 12 , filling the bottom filler 500 or the molding material between the second circuit layer 300 and the first circuit layer 100 through the via hole 320 by the nozzle 920.

[0066] The method in the embodiment can achieve similar technical effects as the semiconductor packaging device in the foregoing embodiments, which will not be repeated here.

[0067] While the disclosure has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations are not intended to limit the disclosure. Those skilled in the art can readily devise various changes that fall within the true spirit and scope of the disclosure, as defined by the following claims. The drawings can not be to scale. There can be differences between the technology in the disclosure and the actual equipment due to, e.g., variations in manufacture, etc. Other embodiments of the disclosure can be utilized without departing from the true spirit and scope of the present disclosure. The specification and drawings should be regarded as illustrative rather than restrictive. Modifications can be made to adapt a particular situation, material, composition of matter, method, or process to the objective, spirit and scope of the disclosure. All such modifications are intended to be within the scope of the claims appended hereto. While the methods disclosed herein have been described with reference to particular operations performed in a particular order, it will be understood that these operations can be combined, sub-divided, or re-ordered to form equivalent methods without departing from the teachings of the present disclosure. Accordingly, unless specifically indicated herein, the order and grouping of operations are not a limitation of the present disclosure.

Claims

1. A semiconductor packaging device, comprising: A first circuit layer, wherein at least two conductive pads are provided on the first surface of the first circuit layer, each of the conductive pads has a recessed structure on its surface, and the bottom of the recessed structure has a horizontal portion, and the horizontal portions corresponding to each of the conductive pads are located on the same horizontal plane. The bottom of the recessed structure also has a sunken portion; The recessed structures corresponding to the at least two conductive pads have at least two different depths; The semiconductor packaging device further includes a second circuit layer; the surface of the second circuit layer is provided with conductive protrusions, and the ends of the conductive protrusions are electrically connected to the horizontal portion of the recessed structure. A seed layer is provided on the horizontal part, and a welding layer is provided on the seed layer. The end of the conductive protrusion is electrically connected to the welding layer through solder. A bottom filler or molding material is provided between the second circuit layer and the first circuit layer; The recessed structure is formed by pressing a pressure head into the first surface of the conductive pad. The ratio of the thickness of the portion of the conductive pad affected by the compressive stress of the pressure head to the remaining metal thickness of the conductive pad is greater than 0.02 and less than 0.

32.

2. The semiconductor packaging apparatus according to claim 1, wherein, The conductive protrusion includes at least one of a conductive post, a solder bump, and a conductive bump.

3. The semiconductor packaging apparatus according to claim 1, wherein, The second surface of the first circuit layer is provided with an electrical connector, which includes at least one of a conductive contact, a conductive ball, and a conductive block.

4. A method for manufacturing a semiconductor packaging device, comprising: At least two pressure heads of an imprinting fixture are pressed into at least two conductive pads on the surface of a first circuit layer to form a recessed structure on the surface of each conductive pad. The bottom of the recessed structure has a horizontal portion, and the horizontal portions corresponding to each conductive pad are located on the same horizontal plane. The recessed structures corresponding to the at least two conductive pads have at least two different depths. A pointed portion is provided below the horizontal bottom end of the pressure head. During the pressing process, the pointed portion forms a cut on the surface of the conductive pad so that the pressure head can smoothly enter the interior of the conductive pad to form the recessed structure, and a sunken portion is formed at the bottom of the recessed structure. Electrically connect the end of the conductive protrusion on the surface of the second circuit layer to the horizontal portion of the recessed structure to obtain a semiconductor packaging device. The step of electrically connecting the end of the conductive protrusion on the surface of the second circuit layer to the horizontal portion of the recessed structure includes: A seed layer is formed on the horizontal portion, and a welding layer is formed on the seed layer; The end of the conductive protrusion is electrically connected to the welding layer by solder; The method further includes: Fill the space between the second circuit layer and the first circuit layer with a bottom filler or molding material; The ratio of the thickness of the portion of the conductive pad affected by the compressive stress of the pressure head to the remaining metal thickness of the conductive pad is greater than 0.02 and less than 0.32.

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