Plasma processing device

Abstract

The invention discloses a plasma processing device, comprising a processing module and a front-end module, wherein the processing module comprises a reaction chamber, a reaction chamber window arranged at an upper port of the reaction chamber, and a reaction chamber cover body covered on the reaction chamber window, wherein an internal space is formed between the reaction chamber cover body and the reaction chamber window, a base is arranged below the reaction chamber, and a plasma processing area is above the base; the front-end module comprises a clean chamber, a clean chamber window arranged at an upper port of the clean chamber, and a clean chamber cover body covered on the clean chamber window, wherein an accommodating space is formed between the clean chamber cover body and the clean chamber window, a carrying platform is arranged below the clean chamber, and a fan filter unit is arranged above the carrying platform; and further comprises a gas regulator, wherein one end of the gas regulator is connected to the internal space of the processing module through a gas pipeline to transport cold air therein, and the other end of the gas regulator is connected to the accommodating space of the front-end module through a gas pipeline to transport hot air therein.

Description

Technical Field

[0001] The present invention relates to the technical field of plasma etching, and in particular to a plasma processing device for controlling the temperature of an upper chamber of a processing module and heating and drying the gas in a front-end module at the same time. Background Art

[0002] In the field of plasma etching technology, a plasma processing device is usually provided, including a processing module and a front-end module. The processing module is used to generate plasma and etch a substrate. Before and after etching the substrate, the substrate is placed in the front-end module by a robot. The front-end module provides cleaned gas through a chemical filter, etc., thereby maintaining a clean chamber with clean gas of high cleanliness, so that the surface of the substrate during transportation will not be contaminated by the attachment of particles, etc.

[0003] The processing module includes a reaction chamber, a reaction chamber window arranged at the upper port of the reaction chamber, and a reaction chamber cover body covered on the reaction chamber window, an internal space is formed between the reaction chamber cover body and the reaction chamber window, and a base is arranged below the reaction chamber; the front-end module includes a clean chamber, a clean chamber window arranged at the upper port of the clean chamber, and a clean chamber cover body covered on the clean chamber window, an accommodating space is formed between the clean chamber cover body and the clean chamber window, a carrying platform is arranged below the clean chamber, and a fan filter unit is arranged above the carrying platform to filter the gas in the clean chamber.

[0004] During the plasma etching process, a heater is provided on the reaction chamber window to prevent the polymer from being deposited on the reaction chamber window. The heater heats the reaction chamber window to prevent the polymer from being deposited on the reaction chamber window, thereby avoiding contamination of the chamber environment and affecting the etching effect of the substrate. However, during the plasma etching process, the energy generated by the plasma bombardment will also increase the temperature of the reaction chamber window, causing the temperature of the reaction chamber window to be in a state of continuous increase, and it is difficult to maintain the high temperature required for etching and maintain a stable temperature. In addition, in the front-end module, the fan filter unit circulates the filtered gas and blows it onto the substrate, but the gas contains a certain amount of moisture, which has an adverse effect on the substrate.

[0005] Therefore, it is necessary to develop a new plasma processing device that can control the temperature of the upper chamber of the processing module and heat and dry the gas in the front-end module at the same time. Summary of the invention

[0006] In view of this, the present invention provides a plasma processing device, which reduces the chamber temperature of the processing module and keeps it relatively stable by setting a gas regulator, and heats and dries the gas in the front-end module to prevent the generation of water vapor.

[0007] To achieve the above object, the present invention provides a plasma processing device, comprising a processing module and a front-end module, wherein the processing module comprises a reaction chamber, a reaction chamber window disposed at an upper port of the reaction chamber, and a reaction chamber cover disposed on the reaction chamber window, wherein an internal space is formed between the reaction chamber cover and the reaction chamber window, a base is disposed below the reaction chamber for carrying a substrate to be processed, and a plasma processing area is located above the base;

[0008] The front-end module includes a clean chamber, a clean chamber window disposed at an upper port of the clean chamber, and a clean chamber cover disposed on the clean chamber window, a containing space is formed between the clean chamber cover and the clean chamber window, a carrying platform is disposed below the clean chamber for carrying a substrate, and a fan filter unit is disposed above the carrying platform for filtering gas in the clean chamber;

[0009] The plasma processing device further includes a gas regulator, one end of which is connected to the internal space of the processing module through a gas pipeline to transport cold air therein, and the other end of the gas regulator is connected to the accommodating space of the front-end module through a gas pipeline to transport hot air therein.

[0010] Optionally, the gas regulator includes a compressor and a condenser, the compressor is used to compress the gaseous refrigerant into a high-temperature and high-pressure gaseous refrigerant, and send it to the condenser for heat dissipation and condensation into a high-pressure liquid refrigerant, and the condenser is used to transport hot air into the accommodation space of the front-end module.

[0011] Optionally, the gas regulator further includes an evaporator, the liquid refrigerant enters the evaporator to gasify and absorb heat, and the evaporator is used to transport cold air into the internal space of the processing module.

[0012] Optionally, a heater is provided on the reaction chamber window to increase the temperature of the reaction chamber window, and the evaporator is used to deliver cold air to the internal space to maintain the reaction chamber window in a stable temperature environment together with the heater.

[0013] Optionally, an inner wall is provided in the clean chamber, and the inner wall divides the clean chamber into an inner chamber and an outer chamber. The fan filter unit circulates and inhales the outer chamber gas and transports it to the inner chamber after filtering. The inner chamber gas recirculates and flows into the outer chamber. The condenser is used to transport hot air into the accommodating space. The clean chamber window is heated and transports heat to the outer chamber to dry the gas in the outer chamber.

[0014] Optionally, the plasma processing device is an inductively coupled plasma processing device.

[0015] Furthermore, the present invention also discloses a plasma processing device, comprising a processing module and a front-end module, wherein the processing module comprises a reaction chamber, a reaction chamber window disposed at an upper port of the reaction chamber, and a reaction chamber cover disposed on the reaction chamber window, wherein an internal space is formed between the reaction chamber cover and the reaction chamber window, a base is disposed below the reaction chamber for carrying a substrate to be processed, and a plasma processing area is disposed above the base;

[0016] The front-end module includes a clean chamber, a clean chamber window disposed at an upper port of the clean chamber, and a clean chamber cover disposed on the clean chamber window, a containing space is formed between the clean chamber cover and the clean chamber window, a carrying platform is disposed below the clean chamber for carrying a substrate, and a fan filter unit is disposed above the carrying platform for filtering gas in the clean chamber;

[0017] The plasma processing device further includes a gas regulator, one end of which is connected to the internal space of the processing module through a gas pipeline and the other end of which is connected to the accommodating space of the front-end module through a gas pipeline. The gas regulator is used to release the hot gas generated in the internal space to the accommodating space.

[0018] Optionally, an inner wall is provided in the clean chamber, and the inner wall divides the clean chamber into an inner chamber and an outer chamber. The fan filter unit circulates and inhales the outer chamber gas and transports it to the inner chamber after filtering. The inner chamber gas recirculates and flows into the outer chamber. A heater is provided on the reaction chamber window to increase the temperature of the reaction chamber window.

[0019] Optionally, the gas regulator includes an extraction pump and an exhaust pump, the extraction pump is used to extract the hot air generated by the heater in the internal space of the processing module and discharge it to the accommodating space of the front-end module through the exhaust pump, and the clean chamber window is heated to transport heat to the external cavity to dry the gas in the external cavity.

[0020] Optionally, the gas regulator is a fan device, and the hot air generated by the heater in the internal space of the processing module flows into the fan device through the gas pipe, and is blown to the accommodation space of the front-end module through the fan device. The clean chamber window is heated and transfers heat to the external cavity to dry the gas in the external cavity.

[0021] Compared with the prior art, the technical solution provided by the present invention has at least the following advantages:

[0022] The gas regulator consists of a compressor, a condenser and an evaporator. The condenser can deliver hot gas to the front-end module to dry the gas and prevent the formation of water vapor. At the same time, the evaporator delivers cold air to the processing module to maintain the upper cavity of the reaction chamber in a high temperature and stable temperature environment.

[0023] The gas regulator, which is composed of a vacuum pump and an exhaust pump, can extract the hot air in the processing module through the vacuum pump and discharge it into the front-end module through the exhaust pump. This can reduce the cavity temperature on the reaction chamber and achieve a stable effect, while preventing the generation of water vapor in the front-end module.

[0024] The gas regulator composed of a fan device can blow the hot air in the processing module into the front-end module, which can also reduce the cavity temperature on the reaction chamber and achieve a stable effect, while preventing the generation of water vapor in the front-end module. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0026] Figure 1 is a schematic diagram of a plasma treatment device;

[0027] Figure 2 is a schematic diagram of a gas regulator in the first embodiment;

[0028] Figure 3 Schematic diagram of a gas regulator in the second embodiment. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] Figure 1A schematic diagram of the structure of a plasma processing device is shown, and the plasma processing device includes a processing module and a front-end module. The processing module in the present invention is an inductively coupled plasma reaction device (Inductively Coupled Plasma). An inductively coupled plasma reaction device is a device that couples the energy of a radio frequency power source into a reaction chamber in the form of a magnetic field via an inductive coil, thereby generating plasma and being used for etching. The inductively coupled plasma reaction device includes a reaction chamber 100, and the reaction chamber 100 includes a roughly cylindrical reaction chamber side wall 101 made of a metal material, an insulating reaction chamber window 102 is arranged at an upper port of the reaction chamber side wall 101, an inductively coupled coil 103 is arranged above the reaction chamber window 102, and the inductively coupled coil 103 is connected to a radio frequency power source 104. A reaction chamber cover 105 is covered on the reaction chamber window 102 and an internal space 106 is formed between the reaction chamber window 102 and the reaction chamber window 102.

[0031] A gas injection port 108 is provided at one end of the reaction chamber side wall 101 close to the reaction chamber window 102. Of course, the gas injection port can also be provided in the central area of ​​the reaction chamber window 102. The gas injection port 108 is connected to a gas supply device. The reaction gas in the gas supply device enters the reaction chamber 100 through the gas injection port 108. The radio frequency power of the radio frequency power source 104 drives the inductive coupling coil 103 to generate a strong high-frequency alternating magnetic field, so that the low-pressure reaction gas is ionized to generate plasma. A base 110 is provided below the reaction chamber 100, and an electrostatic chuck 111 is placed on the base 110 to support and fix the substrate to be processed. Above the base 110 is a plasma processing area. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above active particles can undergo a variety of physical and chemical reactions with the surface of the substrate to be processed, so that the morphology of the substrate surface changes, that is, the etching process is completed. An exhaust pump 112 is also disposed below the reaction chamber 100 to discharge reaction by-products from the reaction chamber 100 .

[0032] The front-end module (Equipment front end module) is arranged at one side of the processing module, and the substrates before and after processing are transferred between the front-end module and the processing module by a manipulator. The front-end module provides cleaned gas through a chemical filter, etc., so as to maintain a clean chamber with clean gas of high cleanliness, so that the surface of the substrate in transportation will not be contaminated by the attachment of particles, etc. The front-end module includes a clean chamber 200, and the clean chamber 200 includes a clean chamber side wall 201 that is roughly cylindrical, and a clean chamber window 202 is arranged at the upper end of the clean chamber side wall 201, and a clean chamber cover 203 is provided on the clean chamber window 202, and a receiving space 204 is formed between the clean chamber cover 203. An inner wall 205 is arranged in the clean chamber 200, and the inner wall 205 divides the clean chamber into an inner chamber 206 and an outer chamber 207.

[0033] A carrier 210 is provided below the clean chamber 200 to carry the substrate to be transported to the processing module for etching. Specifically, the carrier 210 is provided in the inner chamber 206. A fan filter unit 211 (Fan Filter Unit) is provided above the carrier 210 adjacent to the clean chamber window 202 to filter the gas in the clean chamber 200. Specifically, the fan filter unit 211 is provided at the upper port of the inner chamber 206. The fan filter unit 211 circulates and inhales the gas from the outer chamber 207 and transmits it to the inner chamber 206 after filtering. The gas from the inner chamber 206 recirculates and flows into the outer chamber 207. Such a cycle can keep the inner chamber 206 in a clean chamber environment at all times without causing particle contamination to the substrate.

[0034] During the plasma etching process, a heater 107 is provided on the reaction chamber window 102 to prevent the polymer from being deposited on the reaction chamber window 102. The heater 107 heats the reaction chamber window 102 to prevent the polymer from being deposited on the reaction chamber window 102, thereby avoiding contamination of the chamber environment and affecting the etching effect of the substrate. However, during the plasma etching process, the energy generated by the plasma bombardment will also cause the temperature of the reaction chamber window 102 to rise, so that the temperature of the reaction chamber window 102 is in a state of continuous rise, and it is difficult to achieve the effect of maintaining the high temperature required for etching and stabilizing the temperature. In addition, in the front-end module, the fan filter unit 211 circulates the filtered gas and blows it onto the substrate, but the gas contains a certain amount of moisture, which has an adverse effect on the substrate.

[0035] In view of the above-mentioned defects, the inventor proposes the following improvement plan.

[0036] A gas regulator 300 is disposed in the plasma processing apparatus. One end of the gas regulator 300 is connected to the inner space 106 of the processing module through a gas pipeline, and the other end of the gas regulator 300 is connected to the accommodation space 204 of the front-end module through a gas pipeline.

[0037] Please refer to Figure 2 The first embodiment of the present invention is shown in the figure. In this embodiment, the gas regulator 300 includes a compressor 301, a condenser 302 and an evaporator 303. A refrigerant is arranged in the gas regulator 300. The compressor 301 compresses the gaseous refrigerant into a high-temperature and high-pressure gaseous refrigerant, and then sends it to the condenser 302 to dissipate heat and condense into a high-pressure liquid refrigerant, so that the condenser 302 delivers hot air to the accommodation space 204 of the front-end module. At the same time, the liquid refrigerant enters the evaporator 303 and gasifies and absorbs heat to become a gaseous low-temperature refrigerant, so that the evaporator 303 delivers cold air to the internal space 106 of the processing module. Finally, the gaseous low-temperature refrigerant circulates into the compressor 301 again, and the cycle is repeated. The condenser 302 can continuously deliver hot air to the accommodation space 204 of the front-end module, and the evaporator 303 delivers cold air to the internal space 106 of the processing module. Thus, the cold air in the internal space 106 can reduce the temperature of the reaction chamber window 102 which is continuously rising due to the heating of the heater 107, so that the cold air can work in coordination with the heater 107 to maintain the reaction chamber window 102 in a high temperature and stable temperature environment. In addition, the hot air is filled into the accommodation space 204 of the front-end device, and the clean chamber window 202 is heated and transports heat to the outer chamber 207 of the clean chamber 200 to dry the gas in the outer chamber 207. The fan filter unit 211 circulates and inhales the dried gas in the outer chamber 207 and then filters and transports it to the inner chamber 206, which can prevent the moisture in the gas from contaminating the substrate. The gas regulator 300 set in this way can not only maintain the reaction chamber window 102 in a stable temperature environment, but also reduce the humidity of the gas in the clean chamber 200.

[0038] Please refer to Figure 3 The second embodiment of the present invention is shown in FIG. 3 . In this embodiment, the gas regulator 300 includes an air pump 304 and an exhaust pump 305. The air pump 304 is used to extract the hot air generated by the heater 107 in the internal space 106 of the processing module and discharge it to the accommodation space 204 of the front-end module through the exhaust pump 305. The clean chamber window 202 is heated and transmits heat to the outer chamber 207 of the clean chamber 200 to dry the gas in the outer chamber 207. The fan filter unit 211 circulates and inhales the dried gas in the outer chamber 207 and then transmits it to the inner chamber 206 after filtering, which can prevent the moisture in the gas from contaminating the substrate. The gas regulator 300 configured in this way adjusts the temperature of the reaction chamber window 102 by extracting the hot air in the internal space 106, thereby maintaining the reaction chamber window 102 in a high temperature and stable temperature environment. In addition, the extracted temperature is released into the accommodation space 204 to achieve the effect of reducing the humidity of the gas in the clean chamber 200.

[0039] The present invention also provides a third embodiment, in which the gas regulator 300 is a fan device, and the hot air generated by the heating of the heater 107 in the internal space 106 of the processing module flows into the fan device through the gas pipeline, and is blown to the accommodation space of the front-end module through the fan device, and the clean chamber window 202 is heated and transmits heat to the outer chamber 207 to dry the gas in the outer chamber 207. With the gas regulator 300 configured in this way, when the hot air generated by the heating of the heater 107 in the internal space 106 of the processing module flows into the fan device through the gas pipeline, it will be blown to the accommodation space 204 by the fan device, so that the hot air in the internal space 106 can be prevented from accumulating for a long time to achieve a stable temperature environment of the reaction chamber window 102, and the gas humidity in the clean chamber 200 can also be reduced.

[0040] The above three implementation modes can be used one by one in a plasma processing device, or they can be used in combination to achieve better effects.

[0041] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A plasma processing device, comprising a processing module and a front-end module, characterized in that: The processing module comprises a reaction chamber, a reaction chamber window provided at an upper port of the reaction chamber, and a reaction chamber cover provided on the reaction chamber window, an internal space is formed between the reaction chamber cover and the reaction chamber window, a base is provided below the reaction chamber for carrying a substrate to be processed, and a plasma processing area is provided above the base; The front-end module includes a clean chamber, a clean chamber window disposed at an upper port of the clean chamber, and a clean chamber cover disposed on the clean chamber window, a containing space is formed between the clean chamber cover and the clean chamber window, a carrying platform is disposed below the clean chamber for carrying a substrate, and a fan filter unit is disposed above the carrying platform for filtering gas in the clean chamber; The substrate can be transferred between the reaction chamber and the clean chamber by a robot; The plasma processing device further includes a gas regulator, one end of which is connected to the internal space of the processing module through a gas pipeline to transport cold air therein, and the other end of the gas regulator is connected to the accommodating space of the front-end module through a gas pipeline to transport hot air therein.

2. The plasma processing device according to claim 1, wherein: The gas regulator includes a compressor and a condenser. The compressor is used to compress the gaseous refrigerant into a high-temperature and high-pressure gaseous refrigerant, and send it to the condenser for heat dissipation to condense into a high-pressure liquid refrigerant. The condenser is used to transport hot air to the accommodation space of the front-end module.

3. The plasma processing device according to claim 2, wherein: The gas conditioner further includes an evaporator, the liquid refrigerant enters the evaporator to gasify and absorb heat, and the evaporator is used to transport cold air into the internal space of the processing module.

4. The plasma processing device according to claim 3, wherein: The reaction chamber window is provided with a heater for increasing the temperature of the reaction chamber window. The evaporator is used to deliver cold air to the internal space to maintain the reaction chamber window in a stable temperature environment together with the heater.

5. The plasma processing apparatus according to claim 2, wherein: An inner wall is arranged in the clean chamber, and the inner wall divides the clean chamber into an inner chamber and an outer chamber. The fan filter unit circulates and inhales the outer chamber gas and transmits it to the inner chamber after filtering. The inner chamber gas recirculates and flows into the outer chamber. The condenser is used to transmit hot air into the accommodating space. The clean chamber window is heated and transmits heat to the outer chamber to dry the gas in the outer chamber.

6. The plasma processing apparatus according to claim 1, wherein: The plasma processing device is an inductively coupled plasma processing device.

7. A plasma processing device, comprising a processing module and a front-end module, characterized in that: The processing module comprises a reaction chamber, a reaction chamber window provided at an upper port of the reaction chamber, and a reaction chamber cover provided on the reaction chamber window, an internal space is formed between the reaction chamber cover and the reaction chamber window, a base is provided below the reaction chamber for carrying a substrate to be processed, and a plasma processing area is provided above the base; The front-end module includes a clean chamber, a clean chamber window disposed at an upper port of the clean chamber, and a clean chamber cover disposed on the clean chamber window, a containing space is formed between the clean chamber cover and the clean chamber window, a carrying platform is disposed below the clean chamber for carrying a substrate, and a fan filter unit is disposed above the carrying platform for filtering gas in the clean chamber; The substrate can be transferred between the reaction chamber and the clean chamber by a robot; The plasma processing device further includes a gas regulator, one end of which is connected to the internal space of the processing module through a gas pipeline and the other end of which is connected to the accommodating space of the front-end module through a gas pipeline. The gas regulator is used to release the hot gas generated in the internal space to the accommodating space.

8. The plasma processing apparatus according to claim 7, wherein: An inner wall is arranged in the clean chamber, and the inner wall divides the clean chamber into an inner chamber and an outer chamber. The fan filter unit circulates and inhales the outer chamber gas and transmits it to the inner chamber after filtering. The inner chamber gas recirculates and flows into the outer chamber. A heater is arranged on the reaction chamber window to increase the temperature of the reaction chamber window.

9. The plasma processing apparatus according to claim 8, wherein: The gas regulator includes an extraction pump and an exhaust pump. The extraction pump is used to extract the hot air generated by the heater in the internal space of the processing module and discharge it to the accommodation space of the front-end module through the exhaust pump. The clean chamber window is heated and transmits heat to the outer chamber to dry the gas in the outer chamber.

10. The plasma processing apparatus according to claim 8, wherein: The gas regulator is a fan device. The hot air generated by the heater in the internal space of the processing module flows into the fan device through the gas pipeline and is blown to the accommodation space of the front-end module through the fan device. The clean chamber window is heated and transfers heat to the outer cavity to dry the gas in the outer cavity.

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