Solid-state imaging device and electronic apparatus

Abstract

This invention improves readout speed. A solid-state imaging device (100) according to one embodiment includes a plurality of photoelectric conversion elements (PD3) arranged in a matrix, wherein each of the photoelectric conversion elements includes: a first electrode and a second electrode (112, 117), the main planes of the first electrode and the second electrode facing each other; a photoelectric conversion film (113) disposed between the first electrode and the second electrode; a semiconductor layer (114) disposed between the photoelectric conversion film and the second electrode, and a first surface contacting the photoelectric conversion film and at least a portion of a second surface on a side opposite to the first surface contacting the second electrode; an insulating film (316) disposed within the semiconductor layer; and a third electrode (115) disposed within the insulating film.

Description

Technical Field

[0001] This disclosure relates to a solid-state camera device, an electronic device, and a method for manufacturing the solid-state camera device. Background Technology

[0002] In recent years, stacked image sensors have been proposed, in which multiple photoelectric conversion elements are stacked in the thickness direction of a semiconductor substrate. For example, Patent Document 1 proposes a stacked solid-state imaging device in which photoelectric conversion regions for photoelectric conversion of light with green, blue, and red wavelengths are stacked in the vertical direction of the same pixel, and the green photoelectric conversion region is composed of an organic photoelectric conversion film as a method for eliminating false colors. Furthermore, Patent Document 2 proposes a structure in which charge generated by photoelectric conversion and stored on the upper side of a storage electrode is vertically transferred to a collection electrode disposed below the storage electrode.

[0003] Reference List

[0004] Patent documents

[0005] Patent Document 1: JP 2017-157816A

[0006] Patent Document 2: JP 2016-63156A Summary of the Invention

[0007] Technical issues

[0008] However, existing stacked solid-state imaging devices have the following structure: stored charges in the semiconductor layer on the storage electrode temporarily move horizontally along the upper surface of the storage electrode and then flow into the readout electrode located below the storage electrode. Therefore, time is required to transfer the stored charges from the storage electrode to the readout electrode. Consequently, it is difficult to improve the readout speed of pixel signals from each pixel.

[0009] Therefore, this disclosure proposes a solid-state camera device, an electronic device, and a method for manufacturing the solid-state camera device that can improve readout speed.

[0010] Solutions to technical problems

[0011] To address the aforementioned problems, a solid-state imaging device according to one aspect of this disclosure includes a plurality of photoelectric conversion elements arranged in a matrix, wherein each photoelectric conversion element includes: a first electrode and a second electrode arranged such that their principal planes face each other; a photoelectric conversion film disposed between the first electrode and the second electrode; a semiconductor layer disposed between the photoelectric conversion film and the second electrode, and configured such that a first surface contacts the photoelectric conversion film and at least a portion of a second surface on a side opposite to the first surface contacts the second electrode; an insulating film disposed within the semiconductor layer; and a third electrode disposed within the insulating film. Attached Figure Description

[0012] Figure 1 This is a block diagram illustrating a schematic example of the construction of an electronic device equipped with a solid-state camera device according to the first embodiment.

[0013] Figure 2 This is a block diagram illustrating a schematic construction example of a solid-state camera device according to the first embodiment.

[0014] Figure 3 This is a diagram illustrating an example of the stacked structure of a solid-state camera device according to the first embodiment.

[0015] Figure 4 This is a circuit diagram illustrating a schematic construction example of pixel B according to the first embodiment.

[0016] Figure 5 This is a circuit diagram illustrating a schematic construction example of the R pixel according to the first embodiment.

[0017] Figure 6 This is a circuit diagram illustrating a schematic construction example of a G-pixel according to the first embodiment.

[0018] Figure 7 It is shown Figure 2 A block diagram illustrating a more detailed construction example of the pixel array section.

[0019] Figure 8 yes Figure 7 A magnified view of the central region R.

[0020] Figure 9 This is a cross-sectional view showing an example of the cross-sectional structure of a unit pixel in a solid-state camera device according to the first embodiment.

[0021] Figure 10 This is a diagram illustrating the band gap formed between the common electrode and the readout electrode during charge storage according to the first embodiment.

[0022] Figure 11 This is a diagram illustrating the band gap formed between the common electrode and the readout electrode during charge readout according to the first embodiment.

[0023] Figure 12 This is a plan view illustrating an example of a planar layout of a unit pixel according to the first embodiment.

[0024] Figure 13 This is a plan view illustrating an example of the planar layout of the storage electrodes according to the first embodiment (first example).

[0025] Figure 14 This is a plan view illustrating an example of the planar layout of the storage electrodes according to the first embodiment (second example).

[0026] Figure 15 This is a plan view illustrating an example of the planar layout of the storage electrodes according to the first embodiment (third example).

[0027] Figure 16 This is a plan view illustrating an example of the planar layout of the storage electrodes according to the first embodiment (fourth example).

[0028] Figure 17 This is a plan view illustrating an example of the planar layout of the storage electrodes according to the first embodiment (fifth example).

[0029] Figure 18 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the second embodiment.

[0030] Figure 19 This is a cross-sectional view illustrating a schematic structural example of an organic photoelectric conversion element and its surrounding portion according to a variation of the second embodiment.

[0031] Figure 20 This is a cross-sectional view illustrating a schematic construction example of an organic photoelectric conversion element and its surrounding portion according to another variation of the second embodiment.

[0032] Figure 21 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the third embodiment.

[0033] Figure 22 This is a plan view showing an example of a planar layout of the shielding electrodes according to the third embodiment.

[0034] Figure 23 This is a plan view of the shielding electrode and storage electrode according to the second embodiment, viewed from the direction of light incidence.

[0035] Figure 24 This is a cross-sectional view illustrating a schematic structural example of an organic photoelectric conversion element and its surrounding portion according to a variation of the third embodiment.

[0036] Figure 25 This is a cross-sectional view illustrating a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the fourth embodiment.

[0037] Figure 26 This is a plan view showing an example of the planar layout of the readout electrodes according to the fourth embodiment.

[0038] Figure 27 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the fifth embodiment.

[0039] Figure 28 This is a cross-sectional view illustrating a schematic structural example of an organic photoelectric conversion element and its surrounding portion according to a first variation of the fifth embodiment.

[0040] Figure 29 This is a cross-sectional view illustrating a schematic structural example of an organic photoelectric conversion element and its surrounding portion according to a second variation of the fifth embodiment.

[0041] Figure 30 This is a cross-sectional view illustrating a schematic structural example of an organic photoelectric conversion element and its surrounding portion according to a third variation of the fifth embodiment.

[0042] Figure 31 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the sixth embodiment.

[0043] Figure 32 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to a modified embodiment of the sixth embodiment.

[0044] Figure 33 This is a cross-sectional view illustrating a schematic construction example of an organic photoelectric conversion element and its surrounding portion according to another variation of the sixth embodiment.

[0045] Figure 34 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the seventh embodiment.

[0046] Figure 35 This is a plan view showing an example of the planar layout of the storage electrodes according to the seventh embodiment.

[0047] Figure 36 This is a plan view showing another example of the planar layout of the storage electrodes according to the seventh embodiment.

[0048] Figure 37 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the eighth embodiment.

[0049] Figure 38 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the ninth embodiment.

[0050] Figure 39 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the tenth embodiment.

[0051] Figure 40 This is a cross-sectional view showing a schematic example of the construction of the organic photoelectric conversion element and its surrounding portion according to the eleventh embodiment.

[0052] Figure 41 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the twelfth embodiment.

[0053] Figure 42 This is a cross-sectional view (first part) showing the manufacturing method of the solid-state camera device according to the thirteenth embodiment.

[0054] Figure 43 This is a cross-sectional view (second part) showing the manufacturing method of the solid-state camera device according to the thirteenth embodiment.

[0055] Figure 44 This is a cross-sectional view (third part) showing the manufacturing method of the solid-state camera device according to the thirteenth embodiment.

[0056] Figure 45 This is a cross-sectional view (part four) showing the manufacturing method of the solid-state camera device according to the thirteenth embodiment.

[0057] Figure 46 This is a cross-sectional view (part five) showing the manufacturing method of the solid-state camera device according to the thirteenth embodiment.

[0058] Figure 47 This is a cross-sectional view (part six) showing the manufacturing method of the solid-state camera device according to the thirteenth embodiment.

[0059] Figure 48 This is a cross-sectional view (part seven) showing the manufacturing method of the solid-state camera device according to the thirteenth embodiment.

[0060] Figure 49 This is a cross-sectional view (first part) showing the manufacturing method of the solid-state camera device according to the fourteenth embodiment.

[0061] Figure 50 This is a cross-sectional view (second part) showing the manufacturing method of the solid-state camera device according to the fourteenth embodiment.

[0062] Figure 51 This is a cross-sectional view (part three) showing the manufacturing method of the solid-state camera device according to the fourteenth embodiment.

[0063] Figure 52 This is a cross-sectional view (part four) showing the manufacturing method of the solid-state camera device according to the fourteenth embodiment.

[0064] Figure 53 This is a cross-sectional view (part five) showing the manufacturing method of the solid-state camera device according to the fourteenth embodiment.

[0065] Figure 54 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the fifteenth embodiment.

[0066] Figure 55 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the sixteenth embodiment.

[0067] Figure 56 This is a cross-sectional view showing another schematic example of the construction of the organic photoelectric conversion element and its surrounding portion according to the sixteenth embodiment.

[0068] Figure 57 This is a cross-sectional view illustrating a schematic construction example of an organic photoelectric conversion element and its surrounding portion according to a modified example of the sixteenth embodiment.

[0069] Figure 58 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the seventeenth embodiment.

[0070] Figure 59 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the eighteenth embodiment.

[0071] Figure 60 This is a cross-sectional view illustrating a schematic construction example of an organic photoelectric conversion element and its surrounding portion according to a modified embodiment of the eighteenth embodiment.

[0072] Figure 61 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the nineteenth embodiment.

[0073] Figure 62 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the twentieth embodiment.

[0074] Figure 63 This is a plan view showing an example of the planar layout of the readout electrodes according to the twentieth embodiment.

[0075] Figure 64 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to a modified example 1 of the twentieth embodiment.

[0076] Figure 65 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to a modified example 2 of the twentieth embodiment.

[0077] Figure 66 This is a diagram illustrating an example of a schematic construction of an endoscopic surgical system 5000 to which the technology according to this disclosure can be applied.

[0078] Figure 67 It is shown Figure 66 A block diagram illustrating an example of the functional configuration of the camera 5005 and CCU 5039 shown.

[0079] Figure 68 This is a block diagram illustrating an example of a schematic construction of a vehicle control system.

[0080] Figure 69 This is a diagram showing an example of the installation location of the vehicle exterior information detection unit and the camera unit. Detailed Implementation

[0081] In the following description, embodiments of the present disclosure will be presented in detail with reference to the accompanying drawings. Furthermore, in the following embodiments, the same parts will be denoted by the same reference numerals, and repeated descriptions thereof will be omitted.

[0082] Furthermore, this disclosure will be described in the following order.

[0083] 1. First Embodiment

[0084] 1.1 Examples of Electronic Device Construction

[0085] 1.2 Example of Solid State Camera Construction

[0086] 1.3 Example of a stacked structure for a solid-state camera device

[0087] Example of constructing a 1.4 pixel

[0088] 1.4.1 About B-pixels and R-pixels

[0089] 1.4.2 About G-pixels

[0090] Example of a 1.5-unit pixel connection

[0091] Example of a cross-sectional structure per unit pixel (1.6)

[0092] 1.7 Operation of storage electrodes

[0093] Example of a planar layout with 1.8 units of pixels.

[0094] 1.9 Shape of storage electrodes

[0095] 1.10 Photoelectric conversion film

[0096] 1.11 Operation and Effects

[0097] 2. Second Embodiment

[0098] 3. Third embodiment

[0099] 4. Fourth Embodiment

[0100] 5. Fifth Embodiment

[0101] 5.1 First Variation

[0102] 5.2 Second Variation Example

[0103] 5.3 Third variation example

[0104] 6. Sixth Embodiment

[0105] 7. Seventh Embodiment

[0106] 8. Eighth Embodiment

[0107] 9. Ninth Embodiment

[0108] 10. Tenth Embodiment

[0109] 11. Eleventh Embodiment

[0110] 12. Twelfth Embodiment

[0111] 13. Thirteenth Embodiment

[0112] 13.1 Details of the manufacturing process for each component

[0113] 14. Fourteenth Embodiment

[0114] 15. Fifteenth Embodiment

[0115] 16. Sixteenth Embodiment

[0116] 16.1 Variation Example

[0117] 17. Seventeenth Embodiment

[0118] 18. Eighteenth Embodiment

[0119] 19. Nineteenth Embodiment

[0120] 20. Twentieth Embodiment

[0121] 20.1 Variation Example 1

[0122] 20.2 Variation Example 2

[0123] 21. Application Example 1

[0124] 22. Application Example 2

[0125] 1. First Embodiment

[0126] First, the first embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, a stacked solid-state imaging device with the following structure will be described as an example: a photoelectric conversion region for photoelectric conversion of light with wavelengths of green (G), blue (B), and red (R) is stacked in the vertical direction of the same pixel. Furthermore, in this embodiment, the case where the photoelectric conversion region for photoelectric conversion of light having a green wavelength among green, blue, and red will be composed of an organic film will be described as an example.

[0127] 1.1 Examples of Electronic Device Construction

[0128] Figure 1 This is a block diagram illustrating a schematic example of the construction of an electronic device equipped with a solid-state camera device according to the first embodiment. Figure 1 As shown, the electronic device 3000 includes, for example, a camera lens 3020, a solid-state camera device 100, a storage unit 3030, and a processor 3040.

[0129] The imaging lens 3020 is an example of an optical system that receives incident light and forms an image thereon on the light-receiving surface of the solid-state imaging device 100. The light-receiving surface may be a surface on which photoelectric conversion elements of the solid-state imaging device 100 are arranged. The solid-state imaging device 100 performs photoelectric conversion on the incident light to generate image data. Furthermore, the solid-state imaging device 100 performs predetermined signal processing on the generated image data, such as noise removal or white balance adjustment.

[0130] The storage unit 3030 is composed of, for example, flash memory, dynamic random access memory (DRAM), static random access memory (SRAM), etc., and records image data input from the solid-state camera device 100.

[0131] The processor 3040 may be composed of a central processing unit (CPU) or similar components, and may include an application processor that executes the operating system and various application software, a graphics processing unit (GPU), a baseband processor, etc. The processor 3040 performs various necessary processing on image data input from the solid-state camera device 100 and image data read from the storage unit 3030, performs display for the user, and transmits data to the outside via a predetermined network.

[0132] 1.2 Example of Solid State Camera Construction

[0133] Figure 2 This is a block diagram illustrating a schematic example of the construction of a complementary metal-oxide-semiconductor (CMOS) type solid-state imaging device (hereinafter referred to as an image sensor) according to the first embodiment. Here, the CMOS type image sensor is an image sensor formed by applying or partially using CMOS technology.

[0134] like Figure 2 As shown, the image sensor 100 includes, for example, a pixel array unit 3101, a vertical drive circuit 3102, a column processing circuit 3103, a horizontal drive circuit 3104, a system control unit 3105, a signal processing unit 3108, and a data storage unit 3109. In the following description, the vertical drive circuit 3102, the column processing circuit 3103, the horizontal drive circuit 3104, the system control unit 3105, the signal processing unit 3108, and the data storage unit 3109 are also referred to as peripheral circuits.

[0135] The pixel array section 3101 has the following structure, wherein each unit pixel 3110 has a photoelectric conversion element that generates and stores charge based on the amount of received light. The unit pixels 3110 are arranged in the row direction and column direction, that is, in a two-dimensional grid in the form of a matrix (hereinafter referred to as a matrix). Here, the row direction is the pixel arrangement direction of the pixel row (the horizontal direction in the figure), and the column direction is the pixel arrangement direction of the pixel column (the vertical direction in the figure).

[0136] The image sensor 100 according to this embodiment is a stacked image sensor with the following structure: photoelectric conversion regions for photoelectric conversion of light having green (G), blue (B), and red (R) wavelengths are stacked in the vertical direction of the same pixel. Therefore, a unit pixel 3110 includes a pixel 3110G that receives light having a green (G) wavelength to generate a pixel signal, a pixel 3110B that receives light having a blue (B) wavelength to generate a pixel signal, and a pixel 3110R that receives light having a red (R) wavelength to generate a pixel signal. Details of the specific circuit construction and pixel structure of the unit pixel 3110 will be described in the embodiments described later.

[0137] In the pixel array section 3101, relative to the matrix-shaped pixel array, pixel driving lines LD are routed along the row direction for each pixel row, and vertical signal lines VSL are routed along the column direction for each pixel column. The pixel driving lines LD transmit driving signals to drive the pixel array when reading signals from it. Figure 2 In this diagram, the pixel driving line LD is shown as a single wiring, but is not limited to a single wiring. One end of the pixel driving line LD is connected to the output terminal corresponding to each row of the vertical driving circuit 3102.

[0138] The vertical drive circuit 3102, composed of a shift register, an address decoder, etc., simultaneously drives all pixels of the pixel array 3101 row by row. That is, the vertical drive circuit 3102, together with the system control unit 3105 that controls the vertical drive circuit 3102, constitutes a drive unit that controls the operation of the pixels in the pixel array 3101. Although the specific structure of the vertical drive circuit 3102 is not shown in the figure, the vertical drive circuit generally includes two scanning systems: a readout scanning system and a scan system.

[0139] The readout scanning system selectively scans the pixels of the unit pixels 3110 of the pixel array 3101 sequentially, row by row, to read a signal from each pixel of the unit pixels 3110. The signal read from each pixel of the unit pixels 3110 is an analog signal. The sweep scanning system performs a sweep scan on the readout rows that were read out by the readout scanning system one exposure time prior to the readout scan.

[0140] The scanning process, performed by the scanning system, removes unwanted charges from the photoelectric conversion elements of the pixels in the readout row (unit pixels 3110), thereby resetting the photoelectric conversion elements. Then, the unwanted charges are removed (reset) by the scanning system, thus performing what is known as electronic shutter operation. Here, electronic shutter operation is the process of discarding the charges from the photoelectric conversion elements and starting a new exposure (starting charge storage).

[0141] The signal read out by the readout operation of the readout scanning system corresponds to the amount of light received after the previous readout operation or electronic shutter operation. Furthermore, in each pixel of unit pixel 3110, the time period from the readout moment of the immediately preceding readout operation or the sweep moment of the electronic shutter operation to the readout moment of the current readout operation is the charge storage period (also known as the exposure period).

[0142] The signal output from each pixel of the unit pixel 3110 of the pixel row selectively scanned by the vertical drive circuit 3102 is input to the column processing circuit 3103 through each vertical signal line VSL for each pixel column. The column processing circuit 3103 performs predetermined signal processing on the signal output from the pixel of the selected row through the vertical signal line VSL for each pixel column of the pixel array section 3101, and temporarily holds the processed pixel signal.

[0143] Specifically, the column processing circuit 3103 performs at least noise removal processing, such as correlated double sampling (CDS) processing or dual data sampling (DDS) processing as signal processing. For example, CDS processing removes pixel-specific fixed-pattern noise such as reset noise or threshold variations of amplifying transistors in a pixel. The column processing circuit 3103 also has, for example, an analog-to-digital (AD) conversion function for converting analog pixel signals read from photoelectric conversion elements into digital signals and outputting the digital signals.

[0144] The horizontal drive circuit 3104 consists of a shift register, an address decoder, etc., and sequentially selects the readout circuit (hereinafter also referred to as pixel circuit) corresponding to the pixel column of the column processing circuit 3103. Through the selective scanning performed by the horizontal drive circuit 3104, the pixel signal that has undergone signal processing for each pixel circuit in the column processing circuit 3103 is sequentially output.

[0145] The system control unit 3105 is composed of a timing generator that generates various timing signals, and drives and controls the vertical drive circuit 3102, column processing circuit 3103, horizontal drive circuit 3104, etc. based on the various timing signals generated by the timing generator.

[0146] The signal processing unit 3108 has at least computational processing capabilities and performs various signal processing operations, such as computational processing, on the pixel signals output from the column processing circuit 3103. The data storage unit 3109 temporarily stores the data required for the signal processing performed by the signal processing unit 3108 during signal processing.

[0147] Meanwhile, the image data output from the signal processing unit 3108 can be pre-processed in a processor 3040 in an electronic device 3000 equipped with an image sensor 100, or can be transmitted to the outside via a pre-defined network.

[0148] 1.3 Example of a stacked structure for a solid-state camera device

[0149] Figure 3 This is a diagram illustrating an example of the stacked structure of an image sensor according to the first embodiment. (See diagram for example.) Figure 3As shown, the image sensor 100 has a stacked structure in which a light receiving chip 3121 and a circuit chip 3122 are vertically stacked. The light receiving chip 3121 may be, for example, a semiconductor chip including a pixel array section 3101 (in which a plurality of unit pixels 3110 are arranged in a matrix), and the circuit chip 312 ... Figure 2 The semiconductor chip shown includes peripheral circuits, etc.

[0150] For example, the bonding between the light receiver chip 3121 and the circuit chip 3122 can be a so-called direct bonding, where their respective bonding surfaces are planarized and bonded to each other by intermolecular forces. However, this disclosure is not limited to this; for example, so-called Cu-Cu bonding, bump bonding, etc., for bonding copper (Cu) electrode pads formed on the mutually bonding surfaces can also be used.

[0151] Furthermore, the optical receiver chip 3121 and the circuit chip 3122 are electrically connected to each other via a connection such as a through-silicon via (TSV) penetrating the semiconductor substrate. In TSV-based connections, for example, a so-called dual TSV method can be used to connect two TSVs (i.e., a TSV disposed in the optical receiver chip 3121 and a TSV disposed from the optical receiver chip 3121 to the circuit chip 3122 on the outer surface of the chip), and a so-called shared TSV method can be used to connect the two chips via a TSV penetrating the optical receiver chip 3121 and the circuit chip 3122.

[0152] However, when using Cu-Cu bonding or bump bonding to connect the light receiver chip 3121 and the circuit chip 3122 together, the light receiver chip 3121 and the circuit chip 3122 are electrically connected to each other through Cu-Cu bonding or bump bonding.

[0153] Example of constructing a 1.4 pixel

[0154] Figures 4 to 6 This is a circuit diagram illustrating a schematic construction example of pixels according to the first embodiment. Meanwhile, Figure 4 A circuit diagram is shown for a pixel 3110B that performs photoelectric conversion of light, for example, having a blue (B) wavelength. Figure 5 A circuit diagram is shown for a pixel 3110R used to perform photoelectric conversion of light, for example, having a red (R) wavelength. Figure 6 A circuit diagram is shown for a pixel 3110G used to perform photoelectric conversion of light, for example, with a green (G) wavelength.

[0155] First, such as Figure 4As shown, pixel 3110B includes a photodiode PD1, a transmission transistor TRG1, a reset transistor RST1, an amplification transistor AMP1, a selection transistor SEL1, and a floating diffusion layer FD1.

[0156] Similarly, such as Figure 5 As shown, pixel 3110R includes photodiode PD2, transmission transistor TRG2, reset transistor RST2, amplification transistor AMP2, selection transistor SEL2, and floating diffusion layer FD2.

[0157] On the other hand, such as Figure 6 As shown, the pixel 3110G, in which the photoelectric conversion element is composed of an organic film, includes an organic photoelectric conversion element PD3, a reset transistor RST3, an amplification transistor AMP3, a selection transistor SEL3, and a floating diffusion layer FD3.

[0158] For simplicity, the following description will focus on pixels 3110B and 3110G. Meanwhile, the construction and operation of pixel 3110R can be the same as those of pixel 3110B.

[0159] 1.4.1 About B-pixels and R-pixels

[0160] First, such as Figure 4 As shown, in pixel 3110B, the select transistor drive line included in the pixel drive line LD is connected to the gate of the select transistor SEL1, the reset transistor drive line included in the pixel drive line LD is connected to the gate of the reset transistor RST1, and the transfer transistor drive line included in the pixel drive line LD is connected to the gate of the transfer transistor TRG1. Additionally, the vertical signal line VSL1, one end of which is connected to the column processing circuit 3103, is connected to the drain of the amplifying transistor AMP1 via the select transistor SEL1.

[0161] In the following description, the reset transistor RST1, the amplification transistor AMP1, and the selection transistor SEL1 are collectively referred to as the pixel circuit. The pixel circuit may include the floating diffusion region FD1 and / or the transfer transistor TRG1.

[0162] Photodiode PD1 performs photoelectric conversion on incident light. Transmission transistor TRG1 transfers the charge generated in photodiode PD1. The charge transferred by transmission transistor TRG1 is stored in the floating diffusion layer FD1. Amplification transistor AMP1 causes a pixel signal with a voltage value corresponding to the charge stored in the floating diffusion layer FD1 to appear in the vertical signal line VSL1. Reset transistor RST1 releases the charge stored in the floating diffusion layer FD1. Selection transistor SEL1 selects the pixel 3110B to be read.

[0163] The anode of photodiode PD1 is grounded, and its cathode is connected to the source of transmission transistor TRG1. The drain of transmission transistor TRG1 is connected to the source of reset transistor RST1 and the gate of amplification transistor AMP1, with the node serving as their connection point forming the floating diffusion region FD1. Simultaneously, the drain of reset transistor RST1 is connected to a vertical reset input line (not shown in the figure).

[0164] The source of amplifier transistor AMP1 is connected to a vertical current supply line (not shown in the diagram). The drain of amplifier transistor AMP1 is connected to the source of select transistor SEL1, and the drain of select transistor SEL1 is connected to the vertical signal line VSL1.

[0165] The floating diffusion region FD1 converts the stored charge into a voltage with a voltage value corresponding to the amount of charge. Meanwhile, the floating diffusion region FD1 can be, for example, a grounded capacitor. However, this disclosure is not limited to this; the floating diffusion region FD1 can be a capacitance increased by intentionally connecting capacitors or the like to the node connecting the drain of the transmission transistor TRG1, the source of the reset transistor RST1, and the gate of the amplification transistor AMP1.

[0166] 1.4.2 About G-pixels

[0167] On the other hand, such as Figure 6 As shown, pixel 3110G has the following structure: in a structure similar to that of pixel 3110B described above, an organic photoelectric conversion element PD3 is used instead of photodiode PD1 and transmission transistor TRG1.

[0168] The common electrode 112 of the organic photoelectric conversion element PD3 is connected to a predetermined potential VOU, such as ground. On the other hand, the storage electrode 115 is connected via the pixel driving line LD to a voltage application circuit, such as that included in the vertical driving circuit 3102.

[0169] Its structure can also be the same as that of pixel 3110B mentioned above.

[0170] Example of a 1.5-unit pixel connection

[0171] Figure 7 It is shown Figure 2 A block diagram illustrating a more detailed construction example of the pixel array section. Figure 8 yes Figure 7 A magnified view of the central region R.

[0172] like Figure 7 As shown, Figure 2The column processing circuit 3103 shown can be divided into two column processing circuits 3103A and 3103B. In this case, one column processing circuit 3103A can be disposed above, for example, the pixel array section 3101 in the column direction (vertical direction in the figure), and the other column processing circuit 3103B can be disposed below, the pixel array section in the column direction. This reduces the mounting area of ​​the column processing circuits 3103A and 3103B.

[0173] Meanwhile, the pixels connected to the column processing circuits 3103A and 3103B can be divided for each of the pixels 3110R, 3110G and 3110B, for each column or row in the pixel array section 3101, or for each region of the pixel array section 3101 (e.g., the upper and lower halves in the winding direction).

[0174] In addition, such as Figure 8 As shown, a unit pixel 3110 includes three pixels 3110B, 3110R, and 3110G with the circuit structure described above. For example, pixel driving lines LD, routed along the row direction (left-right direction in the figure), are connected to pixels 3110B, 3110R, and 3110G. Additionally, vertical signal lines VSL1 to VSL3 are routed in a direction perpendicular to the column direction (up-down direction in the figure), i.e., the extension direction of the pixel driving lines LD. Column processing circuitry 3103 is provided in the direction in which the vertical signal lines VSL1 to VSL3 extend (see...). Figure 2 or Figure 7 ).

[0175] Example of a cross-sectional structure per unit pixel (1.6)

[0176] Figure 9 This is a cross-sectional view illustrating an example of the cross-sectional structure of a unit pixel in an image sensor according to the first embodiment. Meanwhile, Figure 4 An example of a cross-sectional structure along the thickness direction of a semiconductor substrate in which unit pixels 3110 are manufactured (i.e., semiconductor substrate 101 constituting light receiving chip 3121) is shown.

[0177] like Figure 9 As shown, the unit pixel 3110 includes a semiconductor substrate 101, an insulating layer 111 disposed on the back side (upper surface in the figure) of the semiconductor substrate 101 opposite to the element forming surface (referred to as the front surface), and a wiring layer 121 disposed on the front surface of the semiconductor substrate 101. Meanwhile, the back side of the semiconductor substrate 101 is equivalent to the light incident surface.

[0178] In a unit pixel 3110, pixel 3110G includes an organic photoelectric conversion element PD3, wherein a common electrode (first electrode) 112, a photoelectric conversion film 113, a semiconductor layer 114, and a readout electrode (second electrode) 117 are stacked. The organic photoelectric conversion element PD3 is disposed, for example, in an insulating layer 111. Furthermore, at least a portion of the photoelectric conversion film 113 and at least a portion of the semiconductor layer 114 are disposed between the common electrode 112 and the readout electrode 117, and the common electrode 112 and the readout electrode 117 are configured such that their main planes (surfaces parallel to the back or front surface of the semiconductor substrate 101) face each other. Additionally, at least a portion of the semiconductor layer 114 is in contact with the readout electrode 117.

[0179] The organic photoelectric conversion element PD3 also includes a storage electrode (third electrode) 115 disposed parallel to the back side of the semiconductor substrate 101 in a semiconductor layer 114 between the photoelectric conversion film 113 and the readout electrode 117. The storage electrode 115 is covered by an insulating film 116 to electrically isolate it from the semiconductor layer 114.

[0180] On the other hand, photodiode PD1 of pixel 3110B and photodiode PD2 of pixel 3110R are disposed in semiconductor substrate 101. Specifically, semiconductor substrate 101 includes N-type semiconductor region 103 and N-type semiconductor region 105 arranged sequentially from the back side of semiconductor substrate 101. For example, N-type semiconductor regions 103 and 105 are disposed below organic photoelectric conversion element PD3 in the substrate thickness direction of semiconductor substrate 101.

[0181] For example, the N-type semiconductor region 105 is surrounded by the P-type semiconductor region 104 disposed in the semiconductor substrate 101. For example, the N-type semiconductor region 103 is sandwiched between the P-type semiconductor region 102 disposed on the back side of the semiconductor substrate 101 and the upper part of the P-type semiconductor region 104 surrounding the N-type semiconductor region 105.

[0182] The upper portions of N-type semiconductor region 103, P-type semiconductor region 102, and P-type semiconductor region 104 constitute, for example, a photodiode PD1 of pixel 3110B. On the other hand, N-type semiconductor region 105 and P-type semiconductor region 104 constitute a photodiode PD2 of pixel 3110R.

[0183] The organic photoelectric conversion element PD3 disposed in the insulating layer 111 is connected to the floating diffusion region FD3 disposed on the front surface of the semiconductor substrate 101 via, for example, wiring 118 disposed in the insulating layer 111, through electrode 119 penetrating the semiconductor substrate 101, and wiring 122 disposed in the wiring layer 121 disposed on the front surface side of the semiconductor substrate 101 (see...). Figure 6Meanwhile, the reset transistor RST3, the amplification transistor AMP3, and the selection transistor SEL3 constituting the readout circuit of pixel 3110G can be formed on the front surface side of semiconductor substrate 101.

[0184] On the other hand, the photodiode PD1 disposed in the semiconductor substrate 101 is connected to the floating diffusion region FD1, etc., via the transfer transistor TRG1, which is a vertical transistor disposed in the semiconductor substrate 101 (see...). Figure 4 Furthermore, the photodiode PD2 is connected to the floating diffusion region FD2, etc., via a transfer transistor TRG2 disposed on the front surface of the semiconductor substrate 101 (see...). Figure 5 Meanwhile, the reset transistor RST1, amplification transistor AMP1, and selection transistor SEL1 constituting the readout circuit of pixel 3110B can be formed on the front surface side of semiconductor substrate 101. Similarly, the reset transistor RST2, amplification transistor AMP2, and selection transistor SEL2 constituting the readout circuit of pixel 3110R can be formed on the front surface side of semiconductor substrate 101.

[0185] The front surface of the semiconductor substrate 101 may be covered, for example, with an insulating film 106, a portion of which serves as the gate insulating film for each transistor. Furthermore, the back surface of the semiconductor substrate 101 and the inner surface of the trenches formed in the semiconductor substrate for the through electrodes 119 may be covered with an anti-reflective film 110.

[0186] The semiconductor layer 114 can cover the upper surface of the insulating layer 111, and the photoelectric conversion film 113 and the common electrode 112 can be solid thin films covering the semiconductor layer 114 or the photoelectric conversion film 113.

[0187] A protective film 131 and a planarization film 132 can be disposed on the common electrode 112. In addition, an on-chip lens 133 for each unit pixel 3110 can be disposed on the planarization film 132 and in the region corresponding to the organic photoelectric conversion element PD3, photodiode PD1 and PD2 in the substrate thickness direction.

[0188] In this way, in the first embodiment, the organic photoelectric conversion element PD3 has the following structure, wherein the photoelectric conversion film 113 and the storage electrode 115 covered by the semiconductor layer 114 and the insulating film 116 are disposed between the common electrode 112 and the readout electrode 117.

[0189] In such a structure, such as Figure 9As shown, not only the upper side of the storage electrode 115, but also its sidewall side and lower side are used as storage regions for the charge generated in the photoelectric conversion film 113. Therefore, of the stored charge 120 stored in the organic photoelectric conversion element PD3, the proportion of stored charge 120 stored in the upper part of the storage electrode 115, which is farther from the readout electrode 117, is reduced. As a result, in the transport path of the stored charge 120 from the storage region to the readout electrode 117, the vertical component, forming the shortest distance from the storage region on the sidewall side or lower side of the storage electrode 115 to the readout electrode 117, becomes dominant. Simultaneously, the vertical direction corresponds to the substrate thickness direction of the semiconductor substrate 101.

[0190] 1.7 Operation of storage electrodes

[0191] Figure 10 This is a diagram showing the band gap formed between the common electrode and the readout electrode during charge storage according to the first embodiment. Figure 11 This is a diagram showing the band gap formed between the common electrode and the readout electrode during charge readout according to the first embodiment.

[0192] In the first embodiment, during charge storage and charge readout, an electric field is applied vertically from the common electrode 112 to the readout electrode 117. Therefore, as... Figure 10 As shown, when storing charge, a voltage is applied to the storage electrode 115, causing a depression to form at the boundary between the conduction band and the suppression band in the semiconductor layer 114. Therefore, the charge generated in the photoelectric conversion film 113 can be stored in the semiconductor layer 114 surrounding the storage electrode 115. Additionally, as... Figure 11 As shown, a voltage is applied to the storage electrode 115 during charge readout, causing the depression formed at the boundary between the conduction band and the suppression band during charge readout to be reversed and rise in a convex shape. Therefore, the stored charge 120 trapped around the storage electrode 115 can be released and flow to the readout electrode 117.

[0193] In this way, the voltage applied to the storage electrode 115 is changed from the voltage during charge storage (see...). Figure 10 ) is changed to the voltage during charge readout (see Figure 11 This allows the stored charge 120 stored in the storage region surrounding the storage electrode 115 to be smoothly transferred to the readout electrode 117.

[0194] For example, when electrons generated by photoelectric conversion are used as signals, the voltage applied to the common electrode 112, the voltage applied to the readout electrode 117 (i.e., the reset voltage of the floating diffusion region FD3), and the voltage applied to the storage electrode 115 can be set to -2V, 3V, and 1V respectively during storage (see [reference]). Figure 10 ).

[0195] Additionally, the voltage applied to the common electrode 112, the voltage applied to the read electrode 117 (the reset voltage of the floating diffusion region FD3), and the voltage applied to the storage electrode 115 can be set to -2V, 3V, and -1V respectively during transmission (see [link to documentation]). Figure 11 Meanwhile, in order to prevent electron backflow, the voltage applied to the common electrode 112 can be dynamically changed to -3V, etc.

[0196] By controlling the potential of the photoelectric conversion film 113 and the semiconductor layer 114 through this voltage control, electrons generated by photoelectric conversion can move from the photoelectric conversion film 113 to the semiconductor layer 114 around the storage electrode 115, be stored, and then be read out to the readout electrode 117.

[0197] Electrons transferred to the readout electrode 117 change the potential of the floating diffusion region FD3, which is converted into a voltage by the amplifying transistor AMP3 and read out by the readout circuit as a pixel signal (see...). Figure 6 ).

[0198] As described above, in the first embodiment, not only the semiconductor layer 114 above the storage electrode 115, but also the semiconductor layer 114 on the sidewall side and below the storage electrode 115 can be used as a storage region, thus increasing the amount of charge that can be stored.

[0199] Example of a planar layout with 1.8 units of pixels.

[0200] Figure 12 This is a plan view illustrating an example of a planar layout per unit pixel according to the first embodiment. Meanwhile, in Figure 12 In the figure, the upper left region R1 represents a layout example of the front surface side of the semiconductor substrate 101, the upper right region R2 represents a layout example of the read electrode 117 in the region corresponding to region R1, and the lower right region R3 represents a layout example of the storage electrode 115.

[0201] like Figure 12 As shown, the unit pixel 3110 includes the following layout, wherein the readout circuits of pixel 3110B, pixel 3110R, and pixel 3110G are arranged to surround the photodiode PD2 from three sides in the region R1 allocated to each unit pixel 3110 on the front surface side of the semiconductor substrate 101. The transistors constituting the respective readout circuits are arranged linearly, for example.

[0202] Additionally, the readout electrode 117 is disposed in region R2, which corresponds to region R1 on the front surface of the semiconductor substrate 101 in the substrate thickness direction, and the storage electrode 115 is disposed in region R3, which corresponds to region R2 in the substrate thickness direction. The storage electrode 115 is connected to the voltage application circuit 3102A in the vertical drive circuit 3102 via, for example, a pixel drive line LD.

[0203] 1.9 Shape of storage electrodes

[0204] Figures 13 to 17 This is a plan view showing an example of a planar layout of the storage electrodes according to the first embodiment.

[0205] like Figure 13 As shown, the storage electrode 115 according to the first embodiment can be a lattice structure including a plurality of openings A1 arranged in a matrix. Furthermore, as... Figure 14 As shown, the number and size of the openings A1 can be varied according to the characteristics required by the organic photoelectric conversion element PD3 (e.g., transmission, saturation electron quantity, pixel size, etc.).

[0206] Furthermore, such as Figure 15 and Figure 16 As shown, the shape of opening A1 is not limited to a rectangle (see...). Figure 13 and Figure 14 For example, it can also be a circle.

[0207] In addition, such as Figure 17 As shown, the opening is not limited to the same type of opening A1 with the same size, shape, etc., and an opening A2 with different size, shape, etc. can be provided in the storage electrode 115.

[0208] 1.10 Photoelectric conversion film

[0209] In the first embodiment, when an organic semiconductor is used as the material for the photoelectric conversion film 113, the layer structure of the photoelectric conversion film 113 can have the following structure. However, in the case of a stacked structure, the stacking order can be appropriately changed.

[0210] (1) Monolayer structure of p-type organic semiconductors

[0211] (2) Monolayer structure of n-type organic semiconductors

[0212] (3-1) Stacked structure of p-type organic semiconductor layer / n-type organic semiconductor layer

[0213] (3-2) p-type organic semiconductor layer / hybrid layer of p-type and n-type organic semiconductors (bulk heterostructure) / stacked structure of n-type organic semiconductor layer

[0214] (3-3) Stacked structure of p-type organic semiconductor layer / mixed layer of p-type organic semiconductor and n-type organic semiconductor (bulk heterostructure)

[0215] (3-4) Stacked structure of n-type organic semiconductor layer / hybrid layer of p-type organic semiconductor and n-type organic semiconductor (bulk heterostructure)

[0216] (4) p-type organic semiconductors and mixed layers of p-type organic semiconductors (bulk heterostructure)

[0217] Examples of p-type organic semiconductors include naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, perylene derivatives, tetraphenylene derivatives, pentaphenyl derivatives, quinacridone derivatives, thiophene derivatives, thiophene-thiophene derivatives, benzothiophene derivatives, benzothiophene-benzothiophene derivatives, triallylamine derivatives, carbazole derivatives, perylene derivatives, and styrene derivatives. Derivatives, fluoranthene derivatives, phthalocyanine derivatives, phthalocyanine derivatives, porphyrin derivatives, metal complexes with heterocyclic compounds as ligands, polythiophene derivatives, polybenzothiadiazole derivatives, polyfluorene derivatives, etc.

[0218] Examples of n-type organic semiconductors include fullerenes and fullerene derivatives (e.g., fullerenes such as C60, C70, C74, etc. (high fullerenes, encapsulated fullerenes, etc.) or fullerene derivatives (e.g., fullerene fluorides, PCBM fullerene compounds, fullerene polymers, etc.)), organic semiconductors having a larger (deeper) HOMO to LUMO than p-type organic semiconductors, and transparent inorganic metal oxides.

[0219] Specifically, examples of n-type organic semiconductors include heterocyclic compounds containing nitrogen, oxygen, and sulfur atoms, such as organic molecules whose molecular backbones include pyridine derivatives, pyrazine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, isoquinoline derivatives, acridine derivatives, phenazine derivatives, phenanthroline derivatives, tetrazolium derivatives, pyrazole derivatives, imidazole derivatives, thiazole derivatives, oxazole derivatives, imidazole derivatives, benzimidazole derivatives, benzotriazole derivatives, benzoxazole derivatives, benzoxazole derivatives, carbazole derivatives, benzofuran derivatives, dibenzofuran derivatives, porphyrin derivatives, polystyrene derivatives, polybenzothiadiazole derivatives, polyfluorene derivatives, etc., organometallic complexes, and phthalocyanine derivatives.

[0220] Examples of groups contained in fullerene derivatives include halogen atoms; straight-chain, branched, or cyclic alkyl or phenyl groups; groups having straight-chain or fused aromatic compounds; groups having halides; partially fluoroalkyl groups; perfluoroalkyl groups; silylalkyl groups; siloxyalkyl groups; arylsilyl groups; arylthioalkyl groups; alkylthioalkyl groups; arylsulfonyl groups; alkylsulfonyl groups; arylthioyl groups; alkylthioether groups; amino groups; alkylamino groups; arylamino groups; hydroxyl groups; alkoxy groups; amide groups; acyloxy groups; carbonyl groups; carboxyl groups; carboxamide groups; carbamoyl groups; acyl groups; sulfonyl groups; cyano groups; nitro groups; groups having sulfonates; phosphono groups; and derivatives thereof.

[0221] The thickness of the photoelectric conversion film 113 formed from the above-mentioned organic material is not limited to the following values, but can be set to, for example, 1 × 10⁻⁶. -8 m (meters) to 5×10 -7 m, preferably 2.5 × 10 -8 m to 3×10 -7 m, more preferably, 2.5 × 10 -8 m to 2×10 - 7 m, and more preferably, 1×10 -7 m to 1.8×10 -7 Furthermore, organic semiconductors are generally classified into p-type and n-type. p-type means that holes are easily transported, and n-type means that electrons are easily transported. This is not limited to the explanation that inorganic semiconductors include holes or electrons as a large number of thermally excited charge carriers.

[0222] Examples of materials constituting the photoelectric conversion film 113 that performs photoelectric conversion on light with green wavelengths include rhodamine pigments, cyanine pigments, quinacridone derivatives, and phthalocyanine pigments (phthalocyanine derivatives).

[0223] Furthermore, examples of materials constituting the photoelectric conversion film 113 for photoelectric conversion of blue light include coumarin acid pigment, aluminum tris-8-hydroxyquinoline (Alq3), and cyanine pigment.

[0224] Furthermore, examples of materials constituting the photoelectric conversion film 113 that performs photoelectric conversion of red light include phthalocyanine pigments and subphthalocyanine pigments (subphthalocyanine derivatives).

[0225] Alternatively, a panchromatic photosensitive organic photoelectric conversion film that is sensitive to almost all visible light from the ultraviolet region to the red region can be used as the photoelectric conversion film 113.

[0226] On the other hand, examples of inorganic materials constituting the photoelectric conversion film 113 include crystalline silicon, amorphous silicon, microcrystalline silicon, crystalline selenium, amorphous selenium, and compound semiconductors such as CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2, and AgInSe2 as chalcopyrite-based compounds, or GaAs, InP, AlGaAs, InGaP, AlGaInP, and InGaAsP as III-V compounds, CdSe, CdS, In2Se3, In2S, Bi2Se3, Bi2S3, ZnSe, ZnS, PbSe, and PbS. Furthermore, quantum dots formed from these materials can also be used in the photoelectric conversion film 113.

[0227] Alternatively, the photoelectric conversion film 113 can also be constructed as a stacked structure having a semiconductor layer 114 as the lower layer and a photoelectric conversion film 113 as the upper layer. In this way, the semiconductor layer 114 is disposed below the photoelectric conversion film 113, thereby preventing recombination during charge storage and improving the transfer efficiency of charge stored in the photoelectric conversion film 113 to the readout electrode 117. In addition, the generation of dark current can be suppressed. At the same time, in this case, the material constituting the photoelectric conversion film 113 can be appropriately selected from the various materials constituting the photoelectric conversion film 113 described above.

[0228] Here, as the material constituting the semiconductor layer 114, it is preferable to use a material with a large band gap (e.g., a band gap equal to or greater than 3.0 eV (electron volts)) and higher mobility than the material constituting the photoelectric conversion film 113. Specifically, examples of materials constituting the semiconductor layer 114 include oxide semiconductor materials such as IGZO, and organic semiconductor materials such as transition metal dichalcogenides, silicon carbide, diamond, graphene, carbon nanotubes, fused polycyclic hydrocarbon compounds, and fused heterocyclic compounds.

[0229] Alternatively, if the stored charge 120 is electrons, a material with a higher ionization potential than the material constituting the photoelectric conversion film 113 can be used as the material constituting the semiconductor layer 114. On the other hand, if the stored charge 120 is holes, a material with a lower electron affinity than the material constituting the photoelectric conversion film 113 can be used as the material constituting the semiconductor layer 114.

[0230] Meanwhile, the impurity concentration in the material constituting the semiconductor layer 114 is preferably 1×10⁻⁶. 18 cm -3 Or even smaller. In addition, as long as the photoelectric conversion performance and mobility performance can be satisfied, the photoelectric conversion film 113 and the semiconductor layer 114 can also be formed from the same material.

[0231] Here, the materials for the common electrode 112, the readout electrode 117, the semiconductor layer 114, and the storage electrode 115 are preferably transparent materials. Specifically, materials containing Al-Nd (an alloy of aluminum and neodymium) or ASC (an alloy of aluminum, samarium, and copper) can be used.

[0232] In addition, the band gap energy of the transparent conductive material is preferably 2.5 eV or higher, and more preferably 3.1 eV or higher.

[0233] On the other hand, when the common electrode 112, the readout electrode 117, and the storage electrode 115 are constructed as transparent electrodes, examples of transparent conductive materials constituting the electrodes include conductive metal oxides.

[0234] Specifically, examples of transparent conductive materials include indium oxide, indium tin oxide (including indium tin oxide (ITO), Sn-doped In2O3, crystalline ITO, and amorphous ITO), indium zinc oxide (IZO) with indium as a dopant added to zinc oxide, indium gallium oxide (IGO) with indium as a dopant added to gallium oxide, indium gallium zinc oxide (IGZO(In-GaZnO4)) with indium and gallium added to zinc oxide as dopant, indium tin oxide (ITZO) with indium and tin as dopant added to zinc oxide, and IF O (F-doped In₂O₃), tin oxide (SnO₂), ATO (Sb-doped SnO₂), FTO (F-doped SnO₂), zinc oxide (including ZnO doped with other elements), aluminum zinc oxide (AZO) with aluminum as a dopant added to zinc oxide, gallium zinc oxide (GZO) with gallium as a dopant added to zinc oxide, titanium oxide (TiO₂), niobium titanium oxide (TNO) with niobium as a dopant added to titanium oxide, antimony oxide, spinel-type oxides, and oxides with a YbFe₂O₄ structure.

[0235] Alternatively, examples of transparent electrodes include transparent electrodes with gallium oxide, titanium oxide, niobium oxide, nickel oxide, etc., as a substrate.

[0236] Furthermore, examples of the thickness of the transparent electrode include 2×10⁻⁶. -8 m to 2×10 -7 m, and preferably 3×10 -8 m to 1×10 -7 m.

[0237] 1.11 Operation and Effects

[0238] As described above, according to this embodiment, the storage electrode 115 covered with an insulating film 116 is disposed in the semiconductor layer 114 on the read electrode 117. That is, in this embodiment, the semiconductor layer 114 is also disposed between the storage electrode 115 and the read electrode 117.

[0239] Therefore, not only the semiconductor layer 114 above the storage electrode 115, but also the semiconductor layer 114 on the sidewall side and below the storage electrode 115 can be used as a storage region. Consequently, the proportion of the stored charge 120 stored in the semiconductor layer 114 that is above the storage electrode 115 and needs to be transported in the horizontal direction (along the back and front surfaces) is reduced. As a result, the proportion of the vertical component of the transport path, which occupies a large portion of the stored charge 120, can be increased.

[0240] As a result, the transmission time of the stored charge 120 from the storage electrode 115 to the readout electrode 117 is reduced, thus increasing the speed at which the pixel signal can be read from the unit pixel 3110.

[0241] In addition, since the common electrode 112 and the readout electrode 117 have a potential difference in the substrate thickness direction, the stored charge 120 can be smoothly transferred to the readout electrode 117 by changing the voltage applied to the storage electrode 115 from the voltage during charge storage to the voltage during charge readout.

[0242] Furthermore, the amount of charge that can be stored can be increased by using not only the upper side of the storage electrode 115 but also the sidewall side and the semiconductor layer 114 below the storage electrode 115 as the storage region. That is, since the storage capacitance Q = CV and C = εS / d, when the film thickness d and the dielectric constant ε of the insulating film 116 around the storage electrode 115 are the same and the same voltage V is applied, the storage capacitance can be increased by increasing the area of ​​the storage electrode 115.

[0243] 2. Second Embodiment

[0244] Next, the second embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same structures and operations as in the above embodiments will be used, and repeated descriptions thereof will be omitted.

[0245] Figure 18 This is a cross-sectional view illustrating a schematic structural example of the organic photoelectric conversion element and its surrounding portion according to the second embodiment. Specifically, Figure 18 The diagram shows an area including an on-chip lens 133, a planarization film 132, a protective film 131, a common electrode 112, a photoelectric conversion film 113, a semiconductor layer 114, a storage electrode 115, an insulating film 116, a readout electrode 117, and various wirings mounted on the light-irradiating side of the semiconductor substrate 101.

[0246] like Figure 18As shown, in the organic photoelectric conversion element PD3 according to this embodiment, in the same structure as the organic photoelectric conversion element PD3 according to the first embodiment, the insulating film 116 around the storage electrode 115 is replaced by the insulating film 216.

[0247] The insulating film 216 has a structure in which, for example, the film thickness on the side of the read electrode 117 of the storage electrode 115 is smaller than the film thickness on the sidewall side of the storage electrode 115 and the side of the photoelectric conversion film 113.

[0248] With such a structure, for example, even if the same voltage setting as exemplified in the first embodiment is applied, the potential of the semiconductor layer 114 in the region on the read electrode 117 side of the storage electrode 115 can be further reduced (e.g., Figure 10 (The recessed portion in the middle). Therefore, a larger amount of stored charge 120 can be stored during storage.

[0249] Furthermore, the stored charge 120 of the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115 can easily migrate to the readout electrode 117 side of the storage electrode 115 during storage. Therefore, for example, compared to the first embodiment, the concentration of the stored charge 120 of the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115 can be further reduced. Consequently, the proportion of stored charge 120 of the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115, which is relatively long from the readout electrode 117, is reduced, thereby further improving the transmission characteristics.

[0250] Meanwhile, the thickness of the insulating film 216 can be appropriately set according to the optimization of transmission characteristics and the setting value of the voltage applied to the electrodes (112, 115 and 117).

[0251] For example, such as Figure 19 As shown, except for the thickness of the insulating film 216 on the side of the read electrode 117 of the storage electrode 115, the thickness of the insulating film 216 on the sidewall side of the storage electrode 115 can be set to be less than the thickness of the insulating film 216 on the side of the photoelectric conversion film 113.

[0252] As a result, the proportion of stored charge 120 in the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115, which is relatively long from the readout electrode 117, is further reduced, thereby further improving the transmission characteristics.

[0253] In addition, such as Figure 20As shown, the thickness of the insulating film 216 on the sidewall of the storage electrode 115 can gradually decrease from the upper side to the lower side of the sidewall. For example, this structure can be formed by replacing the storage electrode 115 with a storage electrode 215 having a trapezoidal cross-sectional shape. However, this disclosure is not limited thereto, and the external shape of the cross-sectional shape of the insulating film 216 can be deformed in various ways, such as an inverted trapezoidal shape.

[0254] In this way, by gradually reducing the thickness of the insulating film 216 on the sidewall side of the storage electrode 115 from the upper side to the lower side, the movement of charge on the photoelectric conversion film 113 side of the storage electrode 115 to the readout electrode 117 side of the storage electrode 115 can be further promoted.

[0255] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0256] 3. Third embodiment

[0257] Next, the third embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same structures and operations as in the above embodiments will be used, and repeated descriptions thereof will be omitted.

[0258] Figure 21 This is a cross-sectional view illustrating a schematic structural example of the organic photoelectric conversion element and its surrounding portion according to the third embodiment. Figure 21 As shown, the organic photoelectric conversion element PD3 according to the third embodiment is constructed as follows: for example, in conjunction with the first embodiment using Figure 9 In the same structure as the organic photoelectric conversion element PD3 described above, the insulating film 116 is replaced by the insulating film 316, and further includes a shielding electrode (fourth electrode) 315.

[0259] For example, the insulating film 316 is configured such that its bottom surface contacts the readout electrode 117. For example, the storage electrode 115 is disposed near the center between the top and bottom surfaces of the insulating film 316. The shielding electrode 315 is disposed near the top surface of the insulating film 316, thereby being closer to the photoelectric conversion film 113 side in the insulating film 316 than the storage electrode 115.

[0260] The shielding electrode 315 is an electrode used to individually control, for example, the potential of the semiconductor layer 114 on the sidewall side of the storage electrode 115 and the potential of the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115.

[0261] Figure 22 This is a plan view showing an example of a planar layout of the shielding electrodes according to the third embodiment. Figure 23 This is a plan view of the shielding electrode and storage electrode according to the third embodiment, viewed from the direction of light incidence.

[0262] like Figure 22 As shown, the shielding electrode 315 can be a lattice structure including multiple openings A3 arranged in a matrix. Additionally, as... Figure 23 As shown, the number, size, shape, and position of the openings A3 of the shielding electrode 315 can be configured such that when the shielding electrode 315 and the storage electrode 115 overlap, the openings A3 superimpose on the openings A1 of the storage electrode 115. Therefore, as used in the first embodiment... Figures 13 to 17 As can be said, when the number, size, shape and position of the openings A1 and / or A2 of the storage electrode 115 are changed, the opening A3 of the shielding electrode 315 can also be changed accordingly.

[0263] In such a structure, when the electrons generated by photoelectric conversion are used as signals, during storage, the voltages of the common electrode 112, the readout electrode 117 (reset voltage of the floating diffusion region FD), the storage electrode 115, and the shielding electrode 315 can be set to, for example, -2V, 3V, 1V, and 0V, respectively.

[0264] Additionally, during transmission, the voltage of the common electrode 112, the voltage of the read electrode 117 (the reset voltage of the floating diffusion region FD), and the voltage of the storage electrode 115 can be set to -2V, 3V, and -1V, respectively.

[0265] At this time, the shielded electrode can also be dynamically set to -1.5V, etc., to assist the transfer of stored charge 120 stored in the semiconductor layer 114 on the sidewall of the storage electrode 115 to the readout electrode 117.

[0266] Based on this structure and voltage control, for example, compared to the first embodiment, the concentration of stored charge 120 in the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115 can be reduced. As a result, the proportion of stored charge 120 in the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115, which is relatively long from the readout electrode 117, is reduced, thereby further improving the transmission characteristics.

[0267] Meanwhile, in this embodiment, the concentration of stored charge 120 in the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115 is reduced, so the semiconductor layer 114 between the storage electrode 115 and the readout electrode 117 can be omitted. In this case, by setting the voltage between the storage electrode 115 and the shielding electrode 315 and increasing the height of the storage electrode 115, the amount of stored charge 120 stored in the semiconductor layer 114 on the sidewall side of the storage electrode 115 can also be increased.

[0268] Furthermore, in this embodiment, the voltage applied to each electrode (112, 115, 117, and 315) can be varied according to the amount of light irradiation. For example, as... Figure 24 As shown, in cases where storing a very large amount of charge is required, the voltages of the common electrode 112, the readout electrode 117 (reset voltage of the floating diffusion region FD), the storage electrode 115, and the shielding electrode 315 are set to, for example, -2V, 3V, 0V, and -0.5V, respectively, during storage. This increases the potential of the semiconductor layer 114 on the sidewall side of the storage electrode 115, thereby preventing the stored charge 120 from leaking across the potential barrier to the readout electrode 117 side. In this way, according to this embodiment, operations for storing a large amount of stored charge 120 can also be performed.

[0269] Meanwhile, in order to increase the potential of the semiconductor layer 114 on the sidewall side of the storage electrode 115 to prevent the stored charge 120 from leaking to the read electrode 117, the insulating film 316 on the sidewall side of the storage electrode 115 can be thinner than the film on other surfaces. This improves the modulation performance of the potential of the semiconductor layer 114 on the sidewall side of the storage electrode 115, thereby further enhancing the effect of preventing the stored charge 120 from leaking to the read electrode 117.

[0270] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0271] 4. Fourth Embodiment

[0272] Next, the fourth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be used, and repeated descriptions thereof will be omitted.

[0273] Figure 25 This is a cross-sectional view illustrating a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the fourth embodiment. Figure 26 This is a plan view showing an example of the planar layout of the readout electrodes according to the fourth embodiment.

[0274] like Figure 25 As shown, the organic photoelectric conversion element PD3 according to the fourth embodiment has the following structure: for example, in the third embodiment using Figure 21 In the same structure as the organic photoelectric conversion element PD3 described above, the readout electrode 117 is replaced by the readout electrode 417.

[0275] like Figure 26 As shown, the readout electrode 417 has a planar shape that reduces area while retaining the region required for charge collection. Figure 26In the example shown, the readout electrode 417 has a planar shape that leaves a region in the substrate thickness direction corresponding to the opening A3 of the shielding electrode 315 and the openings A1 (and A2) of the storage electrode 115, and removes other regions except the region required for region connection.

[0276] With this shape, the capacitance of the readout electrode 417 is reduced. Since the readout electrode 417 is connected to the floating diffusion region FD, the conversion efficiency can be improved and the dynamic range of the unit pixel 3110 can be widened by reducing the capacitance of the readout electrode 417.

[0277] Meanwhile, the shape of the readout electrode 417 is not limited to, for example Figure 26 The grid shape shown can be transformed into various shapes, such as a flat shape with a circle cut out.

[0278] The shape of the readout electrode 417 can be appropriately changed according to the distance from the readout electrode 417 to the storage electrode 115, the diameter and spacing of the opening A1 of the storage electrode 115, the size of the unit pixel 3110, etc.

[0279] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0280] 5. Fifth Embodiment

[0281] Next, the fifth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be used, and repeated descriptions thereof will be omitted.

[0282] Figure 27 This is a cross-sectional view illustrating a schematic structural example of the organic photoelectric conversion element and its surrounding portion according to the fifth embodiment. Figure 27 As shown, the organic photoelectric conversion element PD3 according to the fifth embodiment has such a structure, for example, in conjunction with the one used in the fourth embodiment. Figure 25 In the same structure as the organic photoelectric conversion element PD3 described above, the semiconductor layer 114 is replaced with the semiconductor layer 514.

[0283] Semiconductor layer 514 has, for example, a tapered shape, such that its width decreases from photoconversion film 113 to readout electrode 417. Specifically, regarding the width of the boundary between the insulating film 316 on the sidewall side of storage electrode 115 and semiconductor layer 114, and the boundary between the insulating film 316 on the sidewall side of adjacent storage electrode 115 and semiconductor layer 114, the width of the lower end on the readout electrode 417 side is smaller than the width of the upper side on the photoconversion film 113 side.

[0284] This structure reduces the area required for the readout electrode while maintaining easy transfer of charge generated by photoelectric conversion to the area between the storage electrodes 115. Consequently, as mentioned in the fourth embodiment, the capacity of the readout electrode 417 is reduced, thus improving conversion efficiency and widening the dynamic range of the unit pixel 3110.

[0285] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0286] 5.1 First Variation

[0287] Constructions that reduce the area required for the readout electrode are not limited to the use of Figure 27 The structure described above. For example, as... Figure 28 As shown, a configuration can be adopted in which a collection electrode 515 surrounded by an insulating film 516 is disposed above the read electrode 517, thereby being closer to the read electrode 517 than the storage electrode 115 (e.g., directly above the read electrode 517).

[0288] In this configuration, during charge readout, by applying a predetermined voltage to the collection electrode 515 to modulate the potential in the semiconductor layer 114, the stored charge 120 stored near the stored charge 120 can be effectively guided to a specific region of the readout electrode 517, thus reducing the area required for the readout electrode 117.

[0289] 5.2 Second Variation Example

[0290] In addition, such as Figure 29 As shown, the semiconductor layer 514 in the range from the storage electrode 115 to the read electrode 117 can be replaced by a semiconductor layer 524 having a tapered shape that tapers toward the read electrode 517.

[0291] In this configuration, during charge readout, the stored charge 120 stored near the stored charge 120 flows along the boundary between the semiconductor layer 524 and the insulating layer 111, thereby reducing the area required for the readout electrode 517. Furthermore, the collection electrode 515 and the insulating film 516 near the collection electrode can be omitted, resulting in design convenience and simplified fabrication processes.

[0292] 5.3 Third variation example

[0293] In addition, for example, such as Figure 30 As shown, in addition to the configuration illustrated in the second variation, the modulation electrode 525 may also be disposed in the insulating layer 111 near the inclined surface of the semiconductor layer 524.

[0294] In this configuration, during charge readout, by applying a predetermined voltage to the modulation electrode 525 to modulate the potential in the semiconductor layer 524 from the outside, the stored charge 120 stored near the stored charge 120 can be effectively guided to a specific region of the readout electrode 517, thereby further reducing the area required for the readout electrode 517.

[0295] 6. Sixth Embodiment

[0296] Next, the sixth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same structures and operations as in the above embodiments will be used, and repeated descriptions thereof will be omitted.

[0297] Figure 31 This is a cross-sectional view illustrating a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the sixth embodiment. Figure 31 As shown, the organic photoelectric conversion element PD3 according to the sixth embodiment has such a structure, for example, in the third embodiment using Figure 21 In the same structure as the organic photoelectric conversion element PD3 described above, the storage electrode 115 is replaced by the storage electrode 615, and the readout electrode 117 is replaced by the readout electrodes 617A and 617B.

[0298] Meanwhile, the storage electrode 615 may be composed of two electrically separated storage electrodes, but is not limited thereto. The storage electrode may include two regions 615A and 615B, and the storage region is at least divided into two such distinct regions.

[0299] For example, in the structure including the shielding electrode 315 illustrated in the third embodiment, most of the stored charge 120 is stored in the semiconductor layer 114 on the sidewall side of the storage electrode 615. Therefore, in order to divide the storage region into at least two distinct regions, for example, as... Figure 32 or Figure 33 As shown, the opening A4 of the storage electrode 615 can be configured to have a shape that divides into two systems S1 and S2.

[0300] In this way, the storage electrode and readout electrode in a unit pixel 3110 are divided into two storage electrodes 615 (regions 615A and 615B) and two readout electrodes 617A and 617B, thereby enabling the acquisition of phase difference information of the camera plane.

[0301] That is, according to the structure of this embodiment, the stored charge 120 generated by photoelectric conversion of light along two different paths is stored in different storage regions of the semiconductor layer 114 through regions 615A and 615B of the storage electrode 615. Furthermore, the readout electrode is divided into two readout electrodes 617A and 617B, so the stored charge 120 stored in different storage regions of the semiconductor layer 114 can be transferred to the readout electrode 617A or 617B respectively.

[0302] Furthermore, the readout electrode is divided into two readout electrodes 617A and 617B, so the stored charge 120 stored in different storage regions of the semiconductor layer 114 can be transferred to the readout electrode 617A or 617B respectively.

[0303] Therefore, for example, the stored charge 120 generated by photoelectric conversion of light incident during a specific time period can be read from the readout electrode 617A, and the stored charge 120 generated by photoelectric conversion of light incident during a subsequent time period can be read from the readout electrode 617B, and the distance to the object can be obtained by obtaining the ratio of each stored charge.

[0304] In addition, a so-called light field camera capable of acquiring more detailed X-ray information can be constructed by dividing the storage electrode 115 and the readout electrode 117 into three or more electrodes.

[0305] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0306] 7. Seventh Embodiment

[0307] Next, the seventh embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be used, and repeated descriptions thereof will be omitted.

[0308] Figure 34 This is a cross-sectional view illustrating a schematic structural example of the organic photoelectric conversion element and its surrounding portion according to the seventh embodiment. Figure 34 As shown, the organic photoelectric conversion element PD3 according to the seventh embodiment has such a structure, for example, in conjunction with the one used in the sixth embodiment. Figure 31 In the same structure as the organic photoelectric conversion element PD3 described above, instead of the readout electrode 117, there is a storage electrode 115, which is divided into two storage electrodes 715A and 715B.

[0309] Figure 35 and Figure 36 This is a plan view illustrating an example of the planar layout of the storage electrodes according to the seventh embodiment. Figure 35 or Figure 36As shown, storage electrodes 715A and 715B have a structure, for example, in conjunction with those used in the sixth embodiment. Figure 32 or Figure 33 The storage electrode 615 described has the same opening as the opening A4 in the same planar layout, and the two storage electrodes 715A and 715B are electrically separated from each other.

[0310] With this structure, similar to the sixth embodiment, the stored charge 120 generated by photoelectric conversion of light along two different paths is stored in different storage regions of the semiconductor layer 114, and the stored charge 120 stored in the different storage regions of the semiconductor layer 114 can be transferred to the readout electrode 117 respectively. Therefore, phase difference information of the imaging plane can be obtained.

[0311] Furthermore, in this embodiment, components such as the readout electrode 117, the through electrode 119, and the floating diffusion region FD3 can be shared by the two systems of the readout storage charge 120, thus improving the layout efficiency of the unit pixel 3110.

[0312] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0313] 8. Eighth Embodiment

[0314] Next, the eighth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be used, and repeated descriptions thereof will be omitted.

[0315] Figure 37 This is a cross-sectional view illustrating a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the eighth embodiment. Figure 37 As shown, the organic photoelectric conversion element PD3 according to the eighth embodiment has such a structure, for example, when used in the sixth or seventh embodiment. Figure 31 , Figure 34 In the same configuration as the organic photoelectric conversion element PD3 described above, the readout electrode 117 and the storage electrode 115 are respectively divided into two storage electrodes 815A and 815B and two readout electrodes 817A and 817B. Furthermore, in this embodiment, the shielding electrode 315 is omitted.

[0316] In this embodiment, the storage electrodes 815A and 815B are not used to store charge, but are used as electrodes (potential control electrodes) to control the potential of the surrounding semiconductor layer 114.

[0317] Generally speaking, when a ranging device using an image sensor employs Time-of-Flight (ToF) operation as the ranging method, it is necessary to rapidly distribute the charge back and forth within a single pixel by transferring the charge generated through photoelectric conversion.

[0318] Therefore, as in the eighth embodiment, the readout electrode and the storage electrode are configured such that two storage electrodes 815A and 815B and two readout electrodes 817A and 817B are respectively divided, with the storage electrodes 815A and 815B serving as potential control electrodes to control the potential of the surrounding semiconductor layer 114. Thus, by alternately changing the voltage applied to the storage electrodes 815A and 815B, the charge generated by photoelectric conversion can be rapidly distributed to either of the two readout electrodes 817A and 818B.

[0319] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0320] 9. Ninth Embodiment

[0321] Next, the ninth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be used, and repeated descriptions thereof will be omitted.

[0322] The organic photoelectric conversion element PD3 according to this embodiment can, for example, be used in the eighth embodiment. Figure 37 The organic photoelectric conversion element PD3 described is the same. However, in this embodiment, the driving of the organic photoelectric conversion element PD3 and the function of the readout electrodes 817A and 817B are different from those in the eighth embodiment.

[0323] like Figure 38 As shown, in this embodiment, similar to the eighth embodiment, the readout electrode and the storage electrode are each divided into two storage electrodes 815A and 815B and two readout electrodes 817A and 817B.

[0324] In this configuration, in this embodiment, for example, during the exposure period, the charge generated by photoelectric conversion is attracted to the storage electrode 815A side and continuously read out from the readout electrode 817A, while during the shutter period, the charge generated by photoelectric conversion is attracted to the storage electrode 815B side and continuously read out from the readout electrode 817B.

[0325] At this time, the readout electrode 817A is connected to the floating diffusion region FD3. Therefore, the charge generated by photoelectric conversion during the exposure period is stored in the floating diffusion region FD and read out as a pixel signal by the column processing circuit 3103. On the other hand, during the shutter period, the readout electrode 817B is connected to the power supply voltage VDD. For this purpose, the charge generated by photoelectric conversion during the shutter period is released to the power supply voltage VDD side.

[0326] This operation allows for a so-called global shutter operation, which simultaneously initiates shutter operations for all unit pixels 3110.

[0327] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0328] 10. Tenth Embodiment

[0329] Next, the tenth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be used, and repeated descriptions thereof will be omitted.

[0330] Figure 39 This is a cross-sectional view illustrating a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the tenth embodiment. Figure 39 As shown, the organic photoelectric conversion element PD3 according to the tenth embodiment has such a structure, for example, in the use of the eighth embodiment. Figure 37 In the same configuration as the organic photoelectric conversion element PD3 described above, the readout electrodes 817A and 817B are replaced by a readout electrode 117, the insulating film 316 covering each of the storage electrodes 815A and 815B is replaced by an insulating film 116 that does not reach the readout electrode 117, and the semiconductor layer 114 is replaced by a semiconductor layer 914 that does not have trenches for each of the storage electrodes 815A and 815B.

[0331] In this configuration, in this embodiment, charge is stored near storage electrode 815B during the exposure period. At the start of shutter operation, simultaneously for all unit pixels 3110, the stored charge 120 is transferred from the vicinity of storage electrode 815B to the vicinity of storage electrode 815A and held thereafter. Subsequently, the stored charge 120 (not shown) is sequentially transferred from the vicinity of storage electrode 815A to readout electrode 117 and read out.

[0332] In this way, a global shutter operation can be performed by simultaneously performing shutter operations on all unit pixels 3110, storing the charge generated by the shutter operation in the storage electrode 815B, and then sequentially reading the charge from the unit pixels 3110.

[0333] That is, in this embodiment, the storage electrode 115B is used as a memory to hold the charge generated by the shutter operation.

[0334] Meanwhile, in this embodiment, by using transparent materials for all components of the organic photoelectric conversion element PD3, including storage electrodes 815A and 815B, it is not necessary to block light from the storage area. Therefore, a high-sensitivity global shutter structure that maximizes the utilization of the area within a unit pixel 3110 can be achieved.

[0335] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0336] 11. Eleventh Embodiment

[0337] Next, the eleventh embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be used, and repeated descriptions thereof will be omitted.

[0338] Figure 40 This is a cross-sectional view illustrating a schematic example of the construction of the organic photoelectric conversion element and its surrounding portion according to the eleventh embodiment. Figure 40 As shown, the organic photoelectric conversion element PD3 according to the eleventh embodiment has a structure, for example, similar to that used in the third embodiment. Figure 21 In the same structure as the organic photoelectric conversion element PD3 described above, a memory electrode (fifth electrode) 1116 is further disposed between the storage electrode 115 and the readout electrode 117 in the insulating film 316.

[0339] In this structure, in this embodiment, charge is stored in the storage electrode 115 near the photoelectric conversion film 113 during the exposure period, and the stored charge 120 is simultaneously transferred from the vicinity of the storage electrode 115 to the vicinity of the memory electrode 1116 for all unit pixels 3110 at the start of the shutter operation and is held thereafter. Subsequently, the stored charge 120 is sequentially transferred from the vicinity of the memory electrode 1116 to the readout electrode 117 and read out.

[0340] In this way, a global shutter operation can be performed by simultaneously performing shutter operations on all unit pixels 3110, storing the charge generated by the shutter operation in the memory electrode 1116, and then sequentially reading the charge from the unit pixels 3110.

[0341] Furthermore, in this embodiment, for example, compared to the ninth or tenth embodiment, the memory region is not disposed in the horizontal direction (perpendicular to the substrate thickness direction) relative to the memory electrode 115, but in the vertical direction (substrate thickness direction), thus suppressing the reduction in the size of the memory region due to the memory region. Therefore, a global shutter structure with maximized stored charge can be realized.

[0342] Meanwhile, in this embodiment, when the electrons generated by photoelectric conversion are used as signals, for example, during the storage period, the voltages of the common electrode 112, the readout electrode 117, the shielding electrode 315, the storage electrode 115, and the memory electrode 1116 can be set to -2V, 3V, 0V, 1V, and 0.5V, respectively.

[0343] Furthermore, during the transmission period, the voltage of the shielding electrode 315, the voltage of the storage electrode 115, and the voltage of the memory electrode 1116 can be set to -2V, -1V, and 1V, respectively.

[0344] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0345] 12. Twelfth Embodiment

[0346] Next, the twelfth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be referenced, and repeated descriptions thereof will be omitted.

[0347] Figure 41 This is a cross-sectional view illustrating a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the twelfth embodiment. Figure 41 As shown, the organic photoelectric conversion element PD3 according to the twelfth embodiment has such a structure, for example, in conjunction with the one used in the first embodiment. Figure 9 In the same configuration as the organic photoelectric conversion element PD3 described above, the storage electrode 115, surrounded by the insulating film 116, is configured in multiple stages along the substrate thickness direction. Simultaneously, to achieve this multi-stage structure, the semiconductor layer 114 is thickened along the substrate thickness direction.

[0348] Based on this structure, calculation operations such as charge addition and subtraction can be performed by independently controlling the individual storage electrodes 115 arranged in three dimensions until the charge generated by photoelectric conversion is read out from the readout electrode 117.

[0349] For example, charge addition is performed by holding the charge generated by the first shutter operation near a certain storage electrode 115, holding the charge generated by the second shutter operation near another storage electrode 115, and then collecting these charges near a storage electrode 115.

[0350] In this way, according to this embodiment, computational processing can be performed within the organic photoelectric conversion element PD3 before the pixel signal is read out from the unit pixel 3110, thus enabling advanced computations such as pixel addition and image recognition to be performed within the image sensor.

[0351] Furthermore, by further increasing the number of storage electrodes 115 provided in a unit pixel 3110, it is possible to complicate the computational processing that can be performed in each unit pixel 3110.

[0352] Meanwhile, the storage electrode 115 does not need to be set in multiple stages in the substrate thickness direction within each organic photoelectric conversion element PD3, and computational processing can also be performed in each unit pixel 3110 configured to have multiple storage electrodes 115 arranged in a plane perpendicular to the substrate thickness direction.

[0353] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0354] 13. Thirteenth Embodiment

[0355] Next, the thirteenth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same structures and operations as in the above embodiments will be used, and repeated descriptions thereof will be omitted.

[0356] In this embodiment, a method for manufacturing the image sensor 100 illustrated in the first embodiment will be described. Figures 42 to 48 This is a cross-sectional view showing the manufacturing process according to the thirteenth embodiment. The manufacturing method illustrated in this embodiment can be a method using wafer-level chip-scale packaging (CSP) technology, which includes bonding the light receiver chip 3121 and the circuit chip 3122 together in a wafer state before separating them into individual wafers.

[0357] In this manufacturing method, firstly, predetermined acceptors and donors are sequentially ion-implanted into predetermined regions of a P-type semiconductor substrate 101 to form P-type semiconductor regions 102 and 104 and N-type semiconductor regions 103 and 105 constituting photodiodes PD1 and PD2. Simultaneously, component isolation regions for performing component isolation of photodiodes PD1 and PD2 and various transistors between adjacent unit pixels 3110 can be provided in the boundary between them. Component isolation regions can be structures where insulating films and / or light-shielding films are formed in trenches formed in the semiconductor substrate 101, or channel blockers for preventing channel crossings between adjacent unit pixels 3110, etc.

[0358] Next, a transfer transistor TRG1, serving as a vertical transistor, is formed on the front surface (lower surface in the figure) of the semiconductor substrate 101. Subsequently, an insulating film 106, which serves as the gate insulating film of the transistor constituting the readout circuit of pixels 3110B, 3110R, and 3110G, and a gate electrode are formed. Then, after processing the gate electrode, a sidewall is formed on the sidewall side of the gate electrode, and ion implantation is performed using the gate electrode and the sidewall as a mask to form the source and drain of the transistor constituting the readout circuit.

[0359] Subsequently, a wiring layer 121, including wiring 122 connected to the gate electrode, source electrode, drain electrode, etc. of the transistor, is formed on the front surface of the semiconductor substrate 101. At the same time, the separately fabricated circuit chip 3122 and the light receiving chip 3121 including the semiconductor substrate 101 can be bonded together during this stage.

[0360] Next, a trench is formed from the back side of the semiconductor substrate 101, penetrating the semiconductor substrate 101, and an anti-reflective film 110, an insulating film (part of the insulating layer 111) filling the trench, a through electrode 119 penetrating the semiconductor substrate 101 in the trench and connected to the wiring in the wiring layer 121, and wiring 118 connected to the through electrode are formed.

[0361] Next, a transparent electrode material is deposited on the insulating film, and the formed transparent electrode material film is processed by photolithography and dry etching. Subsequently, an insulating film (part of the insulating layer 111) is deposited to bury the processed transparent electrode material film, and its upper surface is planarized by chemical mechanical polishing (CMP) or the like, thereby forming the readout electrode 117. This yields... Figure 42 The cross-sectional structure shown.

[0362] Next, a semiconductor material is deposited on the insulating film in which the readout electrode 117 is formed, and the semiconductor film is formed by photolithography and dry etching. Subsequently, an insulating film (part of the insulating layer 111) is deposited to bury the semiconductor film, and its upper surface is planarized by CMP or the like to form a semiconductor layer 114A, which serves as the lower part of the semiconductor layer 114.

[0363] Next, as Figure 43 As shown, a stacked structure consisting of a storage electrode 115 and a subsequent insulating film 116 is formed by depositing an insulating film 116A as the lower part of the insulating film 116, depositing a transparent conductive material film 15A as the storage electrode 115, processing the transparent electrode material film 115A by photolithography and dry etching, depositing an insulating film (part of the insulating layer 111), planarizing the upper surfaces of the transparent electrode material film 115A and the insulating film using CMP or the like, and depositing an insulating film 116B as the lower part of the insulating film 116.

[0364] Next, as Figure 44 As shown, the insulating film 116B, the transparent electrode material film 115A, and the insulating film 116A are processed by photolithography and dry etching to form an opening region so as to process the transparent electrode material film 115A into a storage electrode 115.

[0365] Next, as Figure 45 As shown, at the current point in time, an insulating film 116C is formed covering the front surface of the insulating layer 111. Subsequently, a portion of the insulating film 116C is removed by etching back or the like to expose the semiconductor layer 114A in the opening region and an insulating film is formed on the side of the storage electrode 115. Thus, as Figure 46 As shown, an insulating film 116 is formed covering the storage electrode 115.

[0366] Next, a semiconductor material is deposited on the surface on which the storage electrode 115 and the insulating film 116 are formed, and the front surface of the formed semiconductor layer is planarized by CMP or the like. Thus, as... Figure 47 As shown, a semiconductor layer 114 is formed near an insulating film 116 covering the storage electrode 115.

[0367] Next, as Figure 48 As shown, a photoelectric conversion film 113, a common electrode 112, a protective film 131, and a planarization film 132 are sequentially deposited on the semiconductor layer 114. Subsequently, a wiring structure for the common electrode 112, an on-chip lens 133 for each unit pixel 3110, and bonding pads are formed, thereby fabricating a [missing information - likely a specific type of material]. Figure 9 The image sensor 100 has the cross-sectional structure shown.

[0368] Meanwhile, in the above manufacturing method, physical vapor deposition (PVD), spin coating, etc., can also be used to form semiconductor layers 114A and 114. Furthermore, to improve device characteristics, films composed of a mixture of multiple types of materials, or laminated films composed of multiple types of material films, can also be used for the photoelectric conversion film 113. In this case, some of the materials to be mixed or laminated can be materials that do not themselves perform photoelectric conversion.

[0369] 13.1 Detailed information on the manufacturing process of each component

[0370] The manufacturing process of each component will be described in more detail below.

[0371] Dry or wet methods can be used as film formation methods for various electrodes.

[0372] Examples of dry methods include PVD and chemical vapor deposition (CVD). Examples of film deposition methods using PVD principles include vacuum vapor deposition using resistance heating or high-frequency heating, electron beam (EB) deposition, various sputtering methods (magnetron sputtering, RF-DC coupled bias sputtering, electron cyclotron resonance (ECR) sputtering, opposed target sputtering, high-frequency sputtering, etc.), ion plating, laser ablation, molecular beam epitaxy, and laser transfer. Furthermore, examples of CVD methods include plasma CVD, thermal CVD, metal-organic (MO) CVD, and optical CVD.

[0373] On the other hand, examples of wet processes include methods such as electroplating, electroless plating, spin coating, inkjet printing, spray coating, embossing, microcontact printing, flexographic printing, offset printing, gravure printing, and immersion printing. Examples of patterning methods include chemical etching such as shadow masking, laser transfer, or photolithography, and physical etching using ultraviolet light, lasers, etc.

[0374] As a planarization technique for the readout electrode 117 and the common electrode 112, laser leveling, reflow method, CMP method, etc. can be used.

[0375] Examples of materials constituting the insulating film 116 include not only silicon oxide-based materials, but also silicon nitride (SiN) and other materials. YInorganic insulating materials, such as metal oxide high-dielectric insulating materials like alumina (Al2O3), also include polymethyl methacrylate (PMMA), polyvinylphenol (PVP), polyvinyl alcohol (PVA), polyimide, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, silanol derivatives (silane coupling agents) such as N-2-(aminoethyl)-3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), and octadecyltrichlorosilane (OTS), phenolic varnish-type phenolic resins, fluoropolymers, and organic insulating materials (organic polymers) such as octadecyl mercaptan and dodecyl isocyanate, which are linear hydrocarbons with functional groups that can be connected to a control electrode at one end. Furthermore, combinations of these materials can also be used.

[0376] Meanwhile, examples of silicon oxide-based materials include silicon oxide (SiO2). X ), BPSG, PSG, BSG, AsSG, PbSG, silicon oxynitride (SiON), SOG (spin-coated glass) and low dielectric constant materials (e.g., polyarylene ethers, cyclic perfluorinated carbon polymers and benzocyclobutene, cyclic fluoropolymers, polytetrafluoroethylene, aryl ether fluorides, polyimide fluorides, amorphous carbon, organic SOG).

[0377] In addition, the materials used to form the insulating film of the insulating layer 111 and the wiring layer 121 can also be appropriately selected from these materials.

[0378] Examples of film-forming methods used for various organic layers, such as photoelectric conversion film 113, include dry film-forming methods and wet film-forming methods.

[0379] Examples of dry film deposition methods include vacuum deposition using resistance heating, high-frequency heating, or electron beam heating; flash deposition; plasma vapor deposition; EB vapor deposition; various sputtering methods (bipolar sputtering, DC sputtering, DC magnetron sputtering, high-frequency sputtering, magnetron sputtering, RF-DC coupled bias sputtering, ECR sputtering, target sputtering, high-frequency sputtering, and ion beam sputtering); direct current (DC) methods; RF methods; multi-cathode methods; activated reaction methods; electric field deposition methods; various ion plating methods such as high-frequency ion plating and reactive ion plating; laser ablation; molecular beam epitaxy; laser transfer; and molecular beam epitaxy (MBE).

[0380] In addition, examples of CVD methods include plasma CVD, thermal CVD, MOCVD, and optical CVD.

[0381] On the other hand, specific examples of wet coating methods include spin coating, dip coating, casting coating, micro-contact printing, drop casting, various printing methods such as screen printing, inkjet printing, offset printing, gravure printing, flexographic printing, embossing, spraying, various coating methods such as air scraping, blade coating, bar coating, doctor blade coating, extrusion coating, reverse roller coating, transfer roller coating, gravure coating, kiss coating, casting coating, spraying, slotted orifice coating, calendering coating, and so on.

[0382] In addition, examples of solvents used in coating methods include non-polar or low-polar organic solvents such as toluene, chloroform, hexane, and ethanol.

[0383] Examples of various organic layer patterning methods include shadow masking, laser transfer, chemical etching such as photolithography, and physical etching using ultraviolet light or lasers.

[0384] Laser planarization, reflow method, and other methods can be used as planarization techniques for various organic layers.

[0385] 14. Fourteenth Embodiment

[0386] Next, the fourteenth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be referenced, and repeated descriptions thereof will be omitted.

[0387] In this embodiment, a method for manufacturing the image sensor 100 illustrated in the third embodiment will be described. Figures 49 to 53 This is a cross-sectional view illustrating the manufacturing method according to the fourteenth embodiment. In this embodiment, the same manufacturing steps as in the thirteenth embodiment will be referenced, and their repeated descriptions will be omitted. Further, similar to the thirteenth embodiment, the manufacturing method illustrated in this embodiment can be a manufacturing method using wafer-level CSP technology, including bonding the light receiver chip 3121 and the circuit chip 3122 together in a wafer state before separating them into individual wafers.

[0388] In this manufacturing method, firstly, by using in the thirteenth embodiment... Figure 42 The same steps described herein form a readout electrode 117 on the front surface of an insulating film (part of insulating layer 111) formed on the back side of semiconductor substrate 101.

[0389] Next, on the insulating film in which the readout electrode 117 is formed, the following processes are sequentially performed: deposition of insulating film 316A (a portion of insulating layer 111 and a portion of insulating film 316), planarization of the front surface of insulating film 316A, deposition of transparent electrode material film, patterning from transparent electrode material film to transparent electrode material film 115A by photolithography and dry etching, deposition of insulating film (a portion of insulating layer 111), planarization of the front surface of insulating film and the front surface 115A of transparent electrode material film, deposition of insulating film 316B (a portion of insulating layer 111 and a portion of insulating film 316), planarization of the front surface of insulating film 316B, deposition of transparent electrode material film, patterning from transparent electrode material film to transparent electrode material film 315A by photolithography and dry etching, deposition of insulating film (a portion of insulating layer 111), and planarization of the front surface of insulating film and the front surface of transparent electrode material film 315A. This results in the following: Figure 49 The cross-sectional structure shown.

[0390] Next, as Figure 50 As shown, the transparent electrode material film 315A, the insulating film 316B, the transparent electrode material film 115A, and the insulating film 316A are processed by photolithography and dry etching to form an opening region, so as to process the transparent electrode material film 315A into a shielding electrode 315 and the transparent electrode material film 115A into a storage electrode 115.

[0391] Next, as Figure 51 As shown, an insulating film 316C is formed on the front surface of the insulating layer 111 at the current time point. Subsequently, a portion of the insulating film 316C is removed by etching back or the like to expose the readout electrode 117 in the opening region, and an insulating film is formed on the sides of the storage electrode 115 and the shielding electrode 315. Thus, as Figure 52 As shown, an insulating film 316 is formed covering the storage electrode 115 and the shielding electrode 315.

[0392] Next, a semiconductor material is deposited on the surface on which the storage electrode 115, the shielding electrode 315, and the insulating film 316 are formed, and the front surface of the formed semiconductor layer is planarized by CMP or the like. Thus, as... Figure 53 As shown, a semiconductor layer 114 is formed near an insulating film 316 covering the storage electrode 115 and the shielding electrode 315.

[0393] Subsequently, the execution is performed as used in the thirteenth embodiment. Figure 48 The steps described are the same as the steps that follow, thus creating a product including Figure 21 The image sensor 100 is illustrated in the cross-sectional structure.

[0394] 15. Fifteenth Embodiment

[0395] Next, the fifteenth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be referenced, and repeated descriptions thereof will be omitted.

[0396] Figure 54 This is a cross-sectional view illustrating a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the fifteenth embodiment. Figure 54 As shown, the organic photoelectric conversion element PD3 according to the fifteenth embodiment has such a structure, for example, in the third embodiment using Figure 21 In the same structure as the organic photoelectric conversion element PD3 described above, the semiconductor layer 114 is replaced with the semiconductor layer 1514.

[0397] For example, in the image sensor 100 illustrated in the third and fourteenth embodiments, the potential of the semiconductor layer 114 can be three-dimensionally controlled by controlling the voltage applied to each of the common electrode 112, the storage electrode 115, the shielding electrode 315, and the readout electrode 117. Additionally, in other embodiments, the potential of the semiconductor layer 114 can also be three-dimensionally controlled by controlling the voltage applied to each electrode.

[0398] Therefore, in this embodiment, the material and composition of the semiconductor layer 1514 are changed to have a continuous or multilayer structure, so that the charge generated by photoelectric conversion is smoothly transferred to the readout electrode 117. For example, as Figure 54 As shown, the semiconductor layer 1514 includes an uppermost semiconductor layer 1514a formed of a material or composition having the highest potential, an intermediate semiconductor layer 1514b formed of a material or composition having the second highest potential, and a lowermost semiconductor layer 1514c formed of a material or composition having the lowest potential.

[0399] Meanwhile, for example, by changing the film formation conditions and the mixing ratio of materials during the film formation process of semiconductor layer 1514, using different in-layer targets for PVD, and spin-coating different materials in layers, continuous or gradual changes in potential in semiconductor layer 1514 can be achieved.

[0400] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0401] 16. Sixteenth Embodiment

[0402] Next, the sixteenth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be referenced, and repeated descriptions thereof will be omitted.

[0403] Figure 55This is a cross-sectional view illustrating a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the sixteenth embodiment. Figure 55 As shown, the organic photoelectric conversion element PD3 according to the sixteenth embodiment has such a structure, for example, in the third embodiment using Figure 21 In the same structure as the organic photoelectric conversion element PD3 described above, the photoelectric conversion film 113 is replaced by the photoelectric conversion film 1613.

[0404] For example, the photoelectric conversion film 1613 has a structure in which a portion protrudes into the semiconductor layer 114 in the opening region of the storage electrode 115. In this way, at least a portion of the photoelectric conversion film 1613 protrudes toward the storage electrode 115, thus reducing the distance from the protrusion to the storage region surrounding the storage electrode 115. This reduces the distance the charge generated by photoelectric conversion travels to the storage region, thereby further increasing the speed at which pixel signals are read out from each unit pixel 3110.

[0405] In addition, such as Figure 55 As shown, by making the photoelectric conversion film 1613 protrude to the sidewall of the storage electrode 115, the movement distance of the charge generated by photoelectric conversion can be minimized, thereby further improving the speed of reading pixel signals from each unit pixel 3110.

[0406] However, the photoelectric conversion film 1613 does not necessarily have to protrude into the opening region of the storage electrode 115, for example, as Figure 56 As shown, only at least a portion of the photoelectric conversion film needs to protrude toward the storage electrode 115 side.

[0407] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0408] 16.1 Variation Example

[0409] In addition, such as Figure 57 As shown, in addition to the photoelectric conversion film 1613, a portion of the common electrode 1612 can also protrude into the storage electrode 115. This increases the probability of photoelectric conversion occurring in the protrusion of the photoelectric conversion film 1613, thereby further reducing the average movement distance of the charge generated by photoelectric conversion. Consequently, the speed at which pixel signals are read out from each unit pixel 3110 can be further improved.

[0410] 17. Seventeenth Embodiment

[0411] Next, the seventeenth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be referenced, and repeated descriptions thereof will be omitted.

[0412] Figure 58 This is a cross-sectional view illustrating a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the seventeenth embodiment. Figure 58 As shown, the organic photoelectric conversion element PD3 according to the seventeenth embodiment has such a structure, for example, in the third embodiment using Figure 21 In the same structure as the organic photoelectric conversion element PD3 described above, multiple storage electrodes (fifth electrodes) 115 are arranged in multiple stages in the substrate thickness direction.

[0413] With this structure, for example, when the transmission direction of the charge-coupled device (CCD) is set to the substrate thickness direction, the potential of the semiconductor layer 114 in the opening region of the storage electrode 115 can be effectively modulated along the charge transmission path, thereby allowing the stored charge 120 to be smoothly transmitted in the substrate thickness direction. Thus, for example, even when the transmission distance of the charge generated by photoelectric conversion increases, the readout speed can be improved through the smooth transmission of the stored charge 120.

[0414] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0415] 18. Eighteenth Embodiment

[0416] Next, the eighteenth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be referenced, and repeated descriptions thereof will be omitted.

[0417] Figure 59 This is a cross-sectional view illustrating a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the eighteenth embodiment. Figure 59 As shown, the image sensor 100 according to the eighteenth embodiment has a structure, for example, that is used in the second embodiment. Figure 18 In the same configuration as the image sensor 100 described above, the color filter 1833 is disposed in the planarization film 132 between the on-chip lens 133 and the organic photoelectric conversion element PD3.

[0418] In this way, the present disclosure is not limited to the second embodiment, in which the color filter 1833 is combined with the vertically stacked organic photoelectric conversion element PD3 and photodiodes PD1 and PD2 to further improve the spectral characteristics of the unit pixel 3110, thereby improving image quality.

[0419] At the same time, such as Figure 59 As shown, relative to the vertically stacked structure of the organic photoelectric conversion element PD3 and photodiodes PD1 and PD2, the color filter 1833 can be disposed on the light incident side (hereinafter referred to as the upstream side), and as... Figure 60 As shown, relative to the vertically stacked structure of the organic photoelectric conversion element PD3 and photodiodes PD1 and PD2, the color filter 1833 can, for example, be disposed in the insulating layer 111 on the downstream side.

[0420] Furthermore, the color filter in this specification can be, for example, a color filter that includes a transmission spectrum of light that transmits a specific wavelength band. In addition, various color filters can be used as color filter 1833, such as color filters using organic materials, color filters using plasmon resonance with patterned metal thin films, and color filters using Fabry-Perot interference with dielectric laminates.

[0421] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0422] 19. Nineteenth Embodiment

[0423] Next, the nineteenth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be referenced, and repeated descriptions thereof will be omitted.

[0424] Figure 61 This is a cross-sectional view illustrating a schematic construction example of the organic photoelectric conversion element and its surrounding portion according to the nineteenth embodiment. Figure 61 As shown, the image sensor 100 according to the nineteenth embodiment has a structure, for example, that is used in the second embodiment. Figure 18 In the same configuration as the image sensor 100 described above, the layered structures T1 and T2, from the insulating layer 111 including the organic photoelectric conversion element PD3 to the planarization film 132, are vertically stacked in two or more layers.

[0425] Simultaneously, two or more organic photoelectric conversion elements PD3 manufactured in this manner can be connected in parallel to, for example, the same readout circuit (see...). Figure 6 ).

[0426] In this way, the spectral characteristics of a single pixel 3110 can be improved by vertically stacking organic photoelectric conversion elements PD3 along the incident axis of light.

[0427] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0428] 20. Twentieth Embodiment

[0429] Next, the twentieth embodiment will be described in detail with reference to the accompanying drawings. In this embodiment, the same constructions and operations as in the above embodiments will be referenced, and repeated descriptions thereof will be omitted.

[0430] For example, in the third embodiment described above, where the readout electrode 117 side of the semiconductor layer 114 is divided into multiple protrusions by the insulating film 316, each protrusion can also be used as an organic photoelectric conversion element. Therefore, in the twentieth embodiment, an example of the case where each protrusion in the semiconductor layer 114 is constructed as an individual organic photoelectric conversion element will be described.

[0431] Figure 62 This is a cross-sectional view showing a schematic example of the construction of an organic photoelectric conversion element and its surrounding portion according to the twentieth embodiment. Figure 63 This is a plan view showing an example of the planar layout of the readout electrodes according to the twentieth embodiment.

[0432] like Figure 62 As shown, in the twentieth embodiment, the organic photoelectric conversion element PD203 is formed in each of the protrusions 114A in the semiconductor layer 114 that are separated by the insulating film 316. That is, in this embodiment, as... Figure 62 and Figure 63 As shown, for example, the organic photoelectric conversion element PD3 according to the third embodiment is divided into nine organic photoelectric conversion elements PD203 arranged in a 3×3 matrix. Meanwhile, the number of separate organic photoelectric conversion elements PD3 is not limited to the example of nine, and can be two or more.

[0433] Therefore, in this embodiment, for example, in the use of the third embodiment... Figure 21 In the same structure as described above, the storage electrode 115 and readout electrode 117 in the third embodiment are replaced with the storage electrode 2015 and readout electrode 2017 of each organic photoelectric conversion element PD203. Furthermore, in this embodiment, the on-chip lens 133 in the third embodiment is replaced with the on-chip lens 2033 of each organic photoelectric conversion element PD203.

[0434] like Figure 63 As shown, a readout electrode 2017 is individually provided for each organic photoelectric conversion element PD203. In this embodiment, Figure 6 The readout circuit shown is connected to, for example, the readout electrode 2017. In this case, the charge readout operation of the organic photoelectric conversion element PD203 is performed independently via the readout electrode 2017.

[0435] In this manner, in this embodiment, an individual organic photoelectric conversion element PD203 is formed for each of the protrusions 114A in the semiconductor layer 114. Thus, for example, pixels can be miniaturized to a level of process precision unattainable when using silicon as the material in the prior art. As a result, the number of unit pixels 3110 per unit area, i.e., pixel density (also known as resolution), can be significantly increased.

[0436] Furthermore, this embodiment has illustrated the situation based on the third embodiment described above. However, this disclosure is not limited thereto, and this embodiment can be similarly applied to situations based on other embodiments.

[0437] Furthermore, the above structure exemplifies the case where an organic photoelectric conversion element PD203 is composed of a single protrusion 114A. However, this disclosure is not limited to this; an organic photoelectric conversion element PD203 may also be composed of two or more protrusions 114A. For example, one of nine individual organic photoelectric conversion elements PD203 may constitute a unit pixel 3110 for high dynamic range (HDR), while the other eight organic photoelectric conversion elements PD203 may constitute a unit pixel 3110 for low dynamic range (LDR). In this case, the storage electrode 2015 and the readout electrode 2017 for the two or more protrusions 114A constituting the same organic photoelectric conversion element PD203 may not be distinguished.

[0438] Furthermore, it is not necessary to set an on-chip lens 2033 for each organic photoelectric conversion element PD203; instead, an on-chip lens 2033 can be set for multiple organic photoelectric conversion elements PD203.

[0439] Other constructions, operations, and effects can be the same as those in the above embodiments, so detailed descriptions thereof will be omitted here.

[0440] 20.1 Variation Example 1

[0441] In the twentieth embodiment described above, an example has been given of providing a storage electrode 2015 separately for each organic photoelectric conversion element PD203. However, this disclosure is not limited thereto; for example, as... Figure 63 As shown, a common storage electrode 2015 can be set for multiple or all organic photoelectric conversion elements PD203.

[0442] 20.2 Variation Example 2

[0443] Additionally, for example, such as Figure 64 As shown, a structure can also be adopted in which a memory electrode 2016 is provided after the memory electrode 2015 (on the side of the read electrode 2014), and the stored charge 120 stored near the memory electrode 2015 is temporarily held around the memory electrode 2016.

[0444] 21. Application Example 1

[0445] The technology disclosed herein can be applied to various products. For example, the technology disclosed herein can be applied to endoscopic surgical systems.

[0446] Figure 66This is a diagram illustrating an example of a schematic construction of an endoscopic surgical system 5000 to which the technology according to this disclosure can be applied. Figure 66 The illustration shows a surgeon (physician) 5067 performing surgery on a patient 5071 on a bed 5069 using an endoscopic surgical system 5000. As shown, the endoscopic surgical system 5000 includes an endoscope 5001, other surgical instruments 5017, a support arm device 5027 supporting the endoscope 5001, and a trolley 5037 on which various devices for endoscopic surgery are mounted.

[0447] In endoscopic surgery, multiple tubular laparotomy devices, referred to as cannulas 5025a to 5025d, are inserted into the abdominal wall, rather than cutting and opening the abdominal wall. Then, the endoscope tube 5003 of endoscope 5001 and other surgical instruments 5017 are inserted through the cannulas 5025a to 5025d into the body cavity of patient 5071. In the example shown, a pneumoperitoneum tube 5019, an energy therapy tool 5021, and forceps 5023 are inserted into the body cavity of patient 5071 as other surgical instruments 5017. Furthermore, the energy therapy tool 5021 is a treatment tool used for cutting and dissecting tissues, sealing blood vessels, etc., using high-frequency current or ultrasonic vibration. However, the surgical instruments 5017 shown in the figure are merely examples; various surgical instruments commonly used in endoscopic surgery, such as forceps and retractors, can be used as surgical instruments 5017.

[0448] Images of the surgical site within the body cavity of the patient 5071, captured by endoscope 5001, are displayed on display device 5041. While observing the images of the surgical site displayed on display device 5041 in real time, surgeon 5067 performs procedures such as resection of the affected area using energy therapy tool 5021 or forceps 5023. Simultaneously, although not shown in the figure, during the procedure, the pneumoperitoneum tube 5019, energy therapy tool 5021, and forceps 5023 are supported by surgeon 5067, assistants, etc.

[0449] (Support arm equipment)

[0450] The support arm device 5027 includes an arm portion 5031 extending from the base portion 5029. In the illustrated example, the arm portion 5031 includes joints 5033a, 5033b, and 5033c, and connecting rods 5035a and 5035b, and is driven under the control of the arm control device 5045. The endoscope 5001 is supported by the arm portion 5031, and its position and orientation are controlled. This allows for the stable fixation of the endoscope 5001 in a stable position.

[0451] (Endoscope)

[0452] Endoscope 5001 includes a tube 5003 and a camera 5005 connected to the bottom end of the tube 5003. The tube 5003 is configured such that a region of predetermined length from its tip is inserted into the body cavity of the patient 5071. In the illustrated example, although an endoscope 5001 is shown as a so-called rigid endoscope configured to include a rigid tube 5003, endoscope 5001 can be configured as a so-called flexible endoscope including a flexible tube 5003.

[0453] The endoscope tube 5003 has an opening at its tip, into which the objective lens is fitted. A light source device 5043 is connected to the endoscope 5001, and light generated by the light source device 5043 is introduced to the tip of the endoscope tube via a light guide extending into the tube, and then irradiated towards the target to be observed in the body cavity of the patient 5071 via the objective lens. The endoscope 5001 can be a direct-viewing endoscope, a fluoroscopy endoscope, or a side-viewing endoscope.

[0454] An optical system and an imaging element are housed within the camera 5005, and reflected light (observation light) from the target being observed is collected onto the imaging element via the optical system. The observation light undergoes photoelectric conversion by the imaging element, generating an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is transmitted to the camera control unit (CCU) 5039 as RAW data. Simultaneously, by appropriately driving the optical system, the camera 5005 has the function of adjusting magnification and focal length.

[0455] At the same time, for example, to handle stereoscopic vision (3D display), the camera 5005 may be equipped with multiple imaging elements. In this case, multiple relay optical systems are arranged within the lens barrel 5003 to guide the observation light to each of the multiple imaging elements.

[0456] (Various devices installed on the cart)

[0457] The CCU 5039 comprises a central processing unit (CPU), a graphics processing unit (GPU), and controls the overall operation of the endoscope 5001 and the display device 5041. Specifically, the CCU 5039 performs various image processing operations, such as image enhancement (de-mosaicing), on the image signal received from the camera 5005 for image display. The CCU 5039 provides the image-processed image signal to the display device 5041. Furthermore, the CCU 5039 sends control signals to the camera 5005 and controls its operation. The control signals may include information related to imaging conditions such as magnification and focal length.

[0458] Display device 5041 displays images based on image signals processed by CCU 5039 under the control of CCU 5039. In cases where endoscope 5001 is an endoscope that processes high-resolution imaging such as 4K (3840 horizontal pixels × 2160 vertical pixels) or 8K (7680 horizontal pixels × 4320 vertical pixels) and / or processes 3D displays, display devices capable of performing high-resolution and / or 3D displays can be used as display devices 5041 for each endoscope. In cases where endoscope 5001 processes high-resolution imaging such as 4K or 8K, further immersion can be achieved by using a display device with a size of 55 inches or larger as display device 5041. Furthermore, multiple display devices 5041 with different resolutions and sizes can be configured according to their applications.

[0459] The light source device 5043 consists of a light source such as a light-emitting diode (LED) and provides illumination light for imaging the surgical site to the endoscope 5001.

[0460] The arm control device 5045 is composed of a processor such as a CPU and operates according to a predetermined program to control the drive of the arm 5031 of the support arm device 5027 according to a predetermined control method.

[0461] Input device 5047 is the input interface for the endoscopic surgical system 5000. Users can input various information and commands to the endoscopic surgical system 5000 via input device 5047. For example, users can input various information about the surgical procedure, such as patient information and information about the surgical steps, via input device 5047. Furthermore, users can input commands via input device 5047 for driving the arm 5031, changing the imaging conditions of the endoscope 5001 (type of illumination light, magnification, focal length, etc.), and driving the energy therapy tool 5021, etc.

[0462] There is no limitation on the type of input device 5047; it can be any known input device. Examples of input devices 5047 include a mouse, keyboard, touch panel, switch, foot switch 5057, joystick, etc. When a touch panel is used as the input device 5047, it can be placed on the display surface of the display device 5041.

[0463] Alternatively, input device 5047 is a device worn by the user, such as glasses-type wearable devices or head-mounted displays (HMDs), and performs various inputs on the input device based on user gestures or gaze detected by these devices. Furthermore, input device 5047 includes a camera capable of detecting user movement, and performs various inputs on the input device based on user gestures or gaze detected from video captured by the camera. Additionally, input device 5047 includes a microphone capable of collecting the user's voice, and performs various inputs on the input device through sound passing through the microphone. In this way, input device 5047 is configured to receive various information inputs in a non-contact manner, so users, especially those in clean areas (e.g., surgeon 5067), can operate devices in unclean areas non-contactly. Furthermore, user convenience is improved because the user does not need to remove their hands from their surgical instruments to operate the device.

[0464] Treatment tool control device 5049 controls the drive of energy treatment tool 5021 used to perform tissue ablation or cutting, vascular sealing, etc. Pneumoperitoneum device 5051 delivers gas into the patient's body cavity 5071 via pneumoperitoneum tube 5019 to inflate the cavity, thereby ensuring the field of vision of endoscope 5001 and ensuring the surgeon's working space. Recorder 5053 is a device capable of recording various information related to the surgical procedure. Printer 5055 is a device capable of printing various surgical-related information in various formats such as text, images, or graphics.

[0465] The specific features of the endoscopic surgical system 5000 will be described in more detail below.

[0466] (Support arm equipment)

[0467] The support arm device 5027 includes a base portion 5029 serving as a base and an arm portion 5031 extending from the base portion 5029. In the illustrated example, the arm portion 5031 includes a plurality of joints 5033a, 5033b, and 5033c and a plurality of links 5035a and 5035b connected to each other via joints 5033b; however, for simplicity, the construction of the arm portion 5031 is... Figure 66 The diagram is simply shown. In practice, the shape, number, and arrangement of the joints 5033a to 5033c, the connecting rods 5035a and 5035b, and the direction of the rotation axis of the joints 5033a to 5033c can be appropriately configured so that the arm 5031 has the desired degrees of freedom. For example, the arm 5031 can be constructed to preferably have six or more degrees of freedom. Thus, the endoscope 5001 can move freely within the movable range of the arm 5031, thereby enabling the endoscope tube 5003 of the endoscope 5001 to be inserted into the body cavity of the patient 5071 from the desired direction.

[0468] Actuators are provided in the joints 5033a to 5033c, and the joints 5033a to 5033c are configured to rotate about a predetermined rotation axis by the drive of the actuators. The drive of the actuators is controlled by the arm control device 5045, thereby controlling the rotation angle of each joint 5033a to 5033c and controlling the drive of the arm 5031. Thus, the position and orientation of the endoscope 5001 can be controlled. At this time, the arm control device 5045 can control the drive of the arm 5031 by various known control methods such as force control or position control.

[0469] For example, surgeon 5067 appropriately executes an operational input via input device 5047 (including foot switch 5057), thereby appropriately controlling the actuation of arm 5031 via arm control device 5045 in response to the operational input, and controlling the position and orientation of endoscope 5001. Through this control, endoscope 5001, as the tip of arm 5031, can be moved from any position to any position and fixedly supported at the moved position. Simultaneously, arm 5031 can be operated via a so-called master-slave method. In this case, the user can remotely operate arm 5031 via input device 5047 installed in a location separate from the operating room.

[0470] Furthermore, under force control, the arm control device 5045 can perform so-called power-assisted control, receiving external force from the user and driving the actuators of the joints 5033a to 5033c, causing the arm 5031 to move smoothly according to the external force. Thus, when the user moves the arm 5031 while in direct contact with it, the user can move the arm 5031 with relatively little force. Therefore, the endoscope 5001 can be moved more intuitively and with simpler operation, improving user convenience.

[0471] Here, generally, in endoscopic surgery, the endoscope 5001 is supported by a physician known as an endoscopist. On the other hand, by using the support arm device 5027, the position of the endoscope 5001 can be more reliably fixed without relying on human intervention, thus allowing for stable acquisition of images of the surgical site and smooth execution of the procedure.

[0472] Meanwhile, the arm control device 5045 does not necessarily need to be installed in the trolley 5037. Furthermore, the arm control device 5045 does not need to be a single device. For example, the arm control device 5045 can be installed in each joint 5033a to 5033c of the arm portion 5031 of the support arm device 5027, and the drive control of the arm portion 5031 can be achieved through the cooperation of multiple arm control devices 5045.

[0473] (Light source equipment)

[0474] The light source device 5043 provides illumination light for photographing the surgical site to the endoscope 5001. The light source device 5043 is, for example, a white light source composed of an LED, a laser light source, or a combination thereof. In the case of a white light source composed of a combination of RGB laser light sources, the output intensity and timing of each color (wavelength) can be controlled with high precision, thus allowing adjustment of the white balance of the image captured by the light source device 5043. Furthermore, in this case, the object to be observed is illuminated in a time-division manner with laser beams emitted from each RGB laser light source, and the driving of the imaging element of the camera 5005 is controlled synchronously with the illumination sequence, thereby also allowing the capture of images corresponding to RGB in a time-division manner. According to this method, a color image can be obtained without a color filter in the imaging element.

[0475] Furthermore, the drive of the light source device 5043 can be controlled to change the intensity of the light output at predetermined time intervals. The drive of the imaging element of the camera 5005 is controlled in time-division multiplexing to acquire images and synthesize them, thereby generating images with high dynamic range without blackouts or overexposure.

[0476] Furthermore, the light source device 5043 can be configured to provide light in a predetermined wavelength band corresponding to special light observation. For example, in special light observation, by utilizing the wavelength dependence of light absorption in body tissues, so-called narrowband imaging is performed with high contrast to capture images of predetermined tissues such as blood vessels on the surface of mucous membranes by emitting light with a narrow band compared to the illumination light used in normal observation (i.e., white light). Alternatively, in special light observation, fluorescence observation can be performed to acquire images by using fluorescence generated by irradiation with excitation light. In fluorescence observation, human tissue can be irradiated with excitation light to observe the fluorescence emitted by the human tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) can be locally injected into human tissue, and the human tissue can be irradiated with excitation light corresponding to the fluorescence wavelength of the reagent to obtain a fluorescence image. The light source device 5043 can be configured to provide narrowband light and / or excitation light corresponding to this special light observation.

[0477] (Camera and CCU)

[0478] Reference Figure 67 The functions of the camera 5005 and CCU 5039 of the endoscope 5001 are described in more detail. Figure 67 It is shown Figure 66 A block diagram illustrating an example of the functional configuration of the camera 5005 and CCU 5039 shown.

[0479] Reference Figure 67The camera 5005 includes a lens unit 5007, an image capture unit 5009, a drive unit 5011, a communication unit 5013, and a camera control unit 5015 as its functional units. Additionally, the CCU 5039 includes a communication unit 5059, an image processing unit 5061, and a control unit 5063 as its functional units. The camera 5005 and the CCU 5039 are interconnected via a transmission cable 5065 to enable bidirectional communication.

[0480] First, the functional structure of the camera 5005 is described. The lens unit 5007 is an optical system disposed in the portion connected to the lens barrel 5003. Observation light incident from the tip of the lens barrel 5003 is guided to the camera 5005 and then incident on the lens unit 5007. The lens unit 5007 is composed of a combination of multiple lenses, including a zoom lens and a focusing lens. The optical characteristics of the lens unit 5007 are adjusted to converge the observation light onto the light-receiving surface of the imaging element of the image capturing unit 5009. Furthermore, the zoom lens and the focusing lens are configured such that their positions on their optical axes are movable to adjust the magnification and focus of the captured image.

[0481] The camera unit 5009 comprises an image sensor and is located after the lens unit 5007. The observation light passing through the lens unit 5007 is focused onto the light-receiving surface of the image sensor, and an image signal corresponding to the observed image is generated through photoelectric conversion. The image signal generated by the camera unit 5009 is provided to the communication unit 5013.

[0482] As the imaging element constituting the imaging unit 5009, for example, a complementary metal-oxide-semiconductor (CMOS) type image sensor with a Bayer array capable of performing color imaging is used. Simultaneously, as the imaging element, for example, an imaging element capable of processing 4K or higher resolution imaging can be used. By acquiring images of the surgical site at high resolution, the surgeon 5067 can obtain a more detailed understanding of the condition of the surgical site and perform the surgery more smoothly.

[0483] Furthermore, the imaging elements constituting the imaging unit 5009 are configured to include a pair of imaging elements for acquiring right-eye and left-eye image signals corresponding to the 3D display. By performing 3D display, the surgeon 5067 can more accurately determine the depth of biological tissue at the surgical site. Simultaneously, when the imaging unit 5009 is configured as a multi-plate type, a system of multiple lens units 5007 corresponding to the imaging elements is also provided.

[0484] Furthermore, the camera unit 5009 does not necessarily need to be mounted on the camera 5005. For example, the camera unit 5009 can be mounted inside the lens barrel 5003, immediately after the objective lens.

[0485] The drive unit 5011, composed of actuators, moves the zoom lens and focusing lens of the lens unit 5007 along the optical axis a predetermined distance under the control of the camera control unit 5015. This allows for appropriate adjustment of the magnification and focus of the image captured by the imaging unit 5009.

[0486] The communication unit 5013 comprises communication equipment for transmitting various information to and receiving various information from the CCU 5039. The communication unit 5013 transmits the image signal obtained from the camera unit 5009 to the CCU 5039 as RAW data via a transmission cable 5065. In this case, to display the captured image of the surgical site with low latency, it is preferable to transmit the image signal via optical communication. This is because, during surgery, the surgeon 5067 performs surgical operations while observing the condition of the affected area through the captured images; therefore, it is necessary to display the motion image of the surgical site as real-time as possible for safer and more reliable surgical procedures. In the case of optical communication, the communication unit 5013 is equipped with a photoelectric conversion module that converts electrical signals into optical signals. The image signal is converted into an optical signal by the photoelectric conversion module, and then the image signal is transmitted to the CCU 5039 via the transmission cable 5065.

[0487] Furthermore, the communication unit 5013 receives control signals from the CCU 5039 for controlling the drive of the camera 5005. The control signals include information about shooting conditions, such as information indicating the frame rate of the captured image, information indicating the exposure value during the shooting period, and / or information indicating the magnification and focus of the captured image. The communication unit 5013 provides the received control signals to the camera control unit 5015. Simultaneously, the control signals received from the CCU 5039 can also be transmitted via optical communication. In this case, the communication unit 5013 is equipped with a photoelectric conversion module that converts optical signals into electrical signals, and the control signals are converted into electrical signals by the photoelectric conversion module and provided to the camera control unit 5015.

[0488] Simultaneously, based on the acquired image signal, the control unit 5063 of the CCU 5039 automatically sets the aforementioned imaging conditions, such as frame rate, exposure value, magnification, and focus. That is, the endoscope 5001 is equipped with so-called automatic exposure (AE) function, automatic focus (AF) function, and automatic white balance (AWB) function.

[0489] The camera control unit 5015 controls the driving of the camera 5005 based on control signals received from the CCU 5039 via the communication unit 5013. For example, the camera control unit 5015 controls the driving of the imaging element of the imaging unit 5009 based on information indicating the frame rate of a specified captured image and / or information indicating the exposure during a specified recording period. Additionally, for example, the camera control unit 5015 appropriately moves the zoom lens and focusing lens of the lens unit 5007 via the drive unit 5011 based on information indicating the magnification and focus of a specified captured image. The camera control unit 5015 may also have the function of storing information for identifying the lens barrel 5003 and the camera 5005.

[0490] Meanwhile, components such as the lens unit 5007 and the camera unit 5009 are housed in a sealed structure with high airtightness and water resistance, so the camera 5005 can be made to withstand high-pressure sterilization.

[0491] Next, the functional structure of CCU 5039 will be described. Communication unit 5059 comprises communication devices for transmitting various information to and receiving various information from camera 5005. Communication unit 5059 receives image signals transmitted from camera 5005 via transmission cable 5065. As described above, the image signals can preferably be transmitted via optical communication. In this case, communication unit 5059 is provided with a photoelectric conversion module that converts optical signals into electrical signals in response to optical communication. Communication unit 5059 provides the converted electrical image signals to image processing unit 5061.

[0492] In addition, the communication unit 5059 transmits control signals for controlling the drive of the camera 5005 to the camera 5005. The control signals can also be transmitted via optical communication.

[0493] The image processing unit 5061 performs various image processing operations on the image signal, which is RAW data transmitted from the camera 5005. Examples of image processing include various known signal processing techniques, such as development processing, high image quality processing (bandwidth enhancement processing, super-resolution processing, noise reduction (NR) processing, and / or camera shake correction processing), and / or magnification processing (electronic zoom processing). Furthermore, the image processing unit 5061 performs detection processing on the image signal to perform AE, AF, and AWB.

[0494] The image processing unit 5061 is composed of a processor such as a CPU or a GPU, and the aforementioned image processing and detection processing can be performed by the processor operating according to a predetermined program. Furthermore, if the image processing unit 5061 is composed of multiple GPUs, the image processing unit 5061 appropriately divides the information related to the image signal and performs image processing in parallel by the multiple GPUs.

[0495] Control unit 5063 performs various controls related to the imaging of the surgical site performed by endoscope 5001 and the display of the captured images. For example, control unit 5063 generates control signals for controlling the drive of camera 5005. In this case, if the user inputs imaging conditions, control unit 5063 generates control signals based on the user's input. Alternatively, if endoscope 5001 is equipped with AE, AF, and AWB functions, control unit 5063 appropriately calculates the optimal exposure value, focal length, and white balance based on the results of detection processing performed by image processing unit 5061 to generate control signals.

[0496] Furthermore, the control unit 5063 displays an image of the surgical site on the display device 5041 based on the image signal that has already been processed by the image processing unit 5061. At this time, the control unit 5063 uses various image recognition technologies to identify various objects in the surgical site image. For example, by detecting the shape, color, etc., of objects contained in the surgical site image, the control unit 5063 can identify surgical instruments such as forceps, specific biological sites, bleeding, and mist from the energy therapy tool 5021. When displaying the surgical site image on the display device 5041, the control unit 5063 uses its recognition results to display various surgical support information superimposed on the surgical site image. This surgical support information is superimposed and presented to the surgeon 5067, thus enabling safer and more reliable surgical procedures.

[0497] The transmission cable 5065 connecting the camera 5005 and the CCU 5039 is an electrical signal cable that supports electrical signal communication, an optical fiber that supports optical communication, or a composite cable thereof.

[0498] Here, in the illustrated example, although communication is wired using transmission cable 5065, communication between camera 5005 and CCU 5039 can be wireless. With wireless communication, transmission cable 5065 does not need to be installed in the operating room, thus resolving the issue of medical staff movement in the operating room being hindered by transmission cable 5065.

[0499] Examples of endoscopic surgical systems 5000 to which the technology according to this disclosure can be applied have been described above. While the endoscopic surgical system 5000 has been described here as an example, systems to which the technology according to this disclosure can be applied are not limited to such examples. For example, the technology according to this disclosure can be applied to flexible endoscopic systems and microsurgical systems used for examination.

[0500] The technology according to this disclosure can preferably be applied to the camera unit 5009 in the above-described components. By applying the technology according to this disclosure to the camera unit 5009, the image data readout speed can be improved, thereby enabling safer and more reliable surgical procedures.

[0501] 22. Application Example 2

[0502] Furthermore, the technology according to this disclosure (the technology) can be applied to a variety of products. For example, the technology according to this disclosure can be implemented as a device installed on any of the following types of mobile bodies: for example, automobiles, electric vehicles, hybrid vehicles, motorcycles, bicycles, personal mobile devices, airplanes, drones, ships, and robots, etc.

[0503] Figure 68 This is a block diagram illustrating an example of a schematic construction of a vehicle control system, which is an example of a mobile body control system to which the technology according to this disclosure can be applied.

[0504] The vehicle control system 12000 includes multiple electronic control units interconnected via a communication network 12001. Figure 68 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. Furthermore, as part of the functional structure of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown in the figure.

[0505] The drive system control unit 12010 controls the operation of equipment related to the vehicle's drive system according to various programs. For example, the drive system control unit 12010 is used as a control device for devices such as a drive force generator that generates the driving force of the vehicle, such as an internal combustion engine or drive motor; a drive force transmission mechanism for transmitting the driving force to the wheels; a steering mechanism for adjusting the steering angle of the vehicle; and a braking device that generates the braking force of the vehicle.

[0506] The body system control unit 12020 controls the operation of equipment installed on the vehicle body according to various programs. For example, the body system control unit 12020 acts as a control device for various devices such as keyless entry systems, smart key systems, power window devices, or various lights such as headlights, reversing lights, brake lights, turn signals, or fog lights. In this case, radio waves or signals from various switches transmitted from a portable device that replaces the key can be input to the body system control unit 12020. The body system control unit 12020 receives these radio wave or signal inputs and controls the vehicle door lock devices, power window devices, lights, etc.

[0507] The exterior information detection unit 12030 detects external information of the vehicle on which the vehicle control system 12000 is installed. For example, a camera unit 12031 is connected to the exterior information detection unit 12030. The exterior information detection unit 12030 causes the camera unit 12031 to capture images of the exterior of the vehicle and receives the captured images. The exterior information detection unit 12030 can perform object detection processing or distance detection processing for people, vehicles, obstacles, signs, or characters on the road surface based on the received images.

[0508] The camera unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The camera unit 12031 can also output an electrical signal as an image and output ranging information. Furthermore, the light received by the camera unit 12031 can be visible light or invisible light such as infrared light.

[0509] The in-vehicle information detection unit 12040 detects information related to the interior of the vehicle. For example, a driver state detection unit 12041, which detects the driver's state, is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures images of the driver, and the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or concentration level based on the detection information input from the driver state detection unit 12041, and can determine whether the driver is dozing off.

[0510] The microcomputer 12051 can calculate the control target values ​​for the drive force generator, steering mechanism, or braking device based on the external and internal information acquired by the external information detection unit 12030 or the internal information detection unit 12040, and can output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control to realize advanced driver assistance system (ADAS) functions, including collision avoidance or collision mitigation, distance-based following, cruise control, collision warning, lane departure warning, etc.

[0511] In addition, the microcomputer 12051 can perform cooperative control based on the vehicle surrounding information obtained by the external information detection unit 12030 or the internal information detection unit 12040, so as to realize autonomous driving by controlling the drive force generator, steering mechanism, braking device, etc. without relying on the driver's operation.

[0512] In addition, the microcomputer 12051 can output control commands to the body system control unit 12020 based on the external information obtained by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights and switch the high beam to low beam based on the position of the vehicle in front or the oncoming vehicle detected in the external information detection unit 12030 to perform anti-glare coordinated control.

[0513] The audio-visual output unit 12052 sends an output signal of at least one of sound and image to an output device capable of visually or audibly notifying passengers or the outside of the vehicle. Figure 68 In the example, audio speaker 12061, display unit 12062, and instrument panel 12063 are shown as output devices. Display unit 12062 may include, for example, at least one of a vehicle display and a head-up display.

[0514] Figure 69 This is a diagram showing an example of the mounting location of the camera unit 12031.

[0515] exist Figure 69 In this configuration, camera units 12101, 12102, 12103, 12104 and 12105 are configured as camera unit 12031.

[0516] Camera units 12101, 12102, 12103, 12104, and 12105 are installed in locations such as the front nose, rearview mirrors, rear bumper, rear door, and upper part of the windshield inside the vehicle 12100. Camera unit 12101, installed in the front nose, and camera unit 12105, installed in the upper part of the windshield inside the vehicle, primarily acquire images of the front of the vehicle 12100. Camera units 12102 and 12103, installed in the rearview mirrors, primarily acquire images of the sides of the vehicle 12100. Camera unit 12104, installed on the rear bumper or rear door, primarily acquires images of the rear of the vehicle 12100. Camera unit 12105, installed in the upper part of the windshield inside the vehicle, is mainly used to detect vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes ahead.

[0517] at the same time, Figure 69 An example of the camera range of camera units 12101 to 12104 is shown. Camera range 12111 represents the camera range of camera unit 12101 located at the front nose; camera ranges 12112 and 12113 represent the camera ranges of camera units 12102 and 12103 located at the side mirrors, respectively; and camera range 12114 represents the camera range of camera unit 12104 located at the rear bumper or rear door. For example, a bird's-eye view of the vehicle 12100 viewed from above can be obtained by overlaying image data captured by camera units 12101 to 12104.

[0518] At least one of the camera units 12101 to 12104 may have the function of acquiring distance information. For example, at least one of the camera units 12101 to 12104 may be a stereo camera composed of multiple camera elements or may be a camera element having pixels for phase difference detection.

[0519] For example, the microcomputer 12051 can obtain the distances to various three-dimensional objects within the camera ranges 12111 to 12114 and the changes in these distances over time (relative speed to the vehicle 12100) based on distance information obtained from camera units 12101 to 12104. This allows it to extract, in particular, the closest three-dimensional object traveling on the path of the vehicle 12100 and in substantially the same direction as the vehicle 12100 at a predetermined speed (e.g., equal to or greater than 0 km / h) as the vehicle ahead. Furthermore, the microcomputer 12051 can pre-set a distance to ensure the following vehicle, and execute automatic braking control (including follow-stop control), automatic acceleration control (including follow-start control), etc. In this way, cooperative control can be performed to achieve autonomous driving, where the vehicle can drive itself without relying on driver operation.

[0520] For example, the microcomputer 12051 can classify three-dimensional object data related to three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from camera units 12101 to 12104, and can use the extracted three-dimensional object data to automatically avoid obstacles. For example, the microcomputer 12051 distinguishes obstacles near vehicle 12100 into obstacles that the driver of vehicle 12100 can visually recognize and obstacles that are difficult to visually recognize. Then, the microcomputer 12051 can determine the collision risk, which represents the degree of collision risk with each obstacle. When the collision risk value is equal to or greater than a set value and there is a possibility of collision, it can output a warning to the driver through audio speaker 12061 or display unit 12062 and perform forced deceleration or avoidance steering through driving system control unit 12010 to perform driving support for collision avoidance.

[0521] At least one of the camera units 12101 to 12104 can be an infrared camera that detects infrared light. For example, the microcomputer 12051 can identify a pedestrian by determining whether a pedestrian exists in the images captured by the camera units 12101 to 12104. For example, this pedestrian identification is performed by extracting feature points from the images captured by the camera units 12101 to 12104, which are infrared cameras, and performing pattern matching processing on a series of feature points representing the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian exists in the images captured by the camera units 12101 to 12104 and identifies the pedestrian, the audio-visual output unit 12052 controls the display unit 12062 so that a square outline for emphasis is superimposed on the identified pedestrian and displayed. Furthermore, the audio-visual output unit 12052 can control the display unit 12062 so that an icon or the like representing a pedestrian is displayed at a desired location.

[0522] An example of a vehicle control system that can be applied according to the technology of this disclosure has been described above. The technology of this disclosure can be applied to the camera unit 12031, the external information detection unit 12030, the internal information detection unit 12040, the driver state detection unit 12041, etc., in the above-described components. By applying the technology of this disclosure to these components, the image data readout speed can be improved, thereby achieving effects such as better support for driver operation.

[0523] While embodiments of the present disclosure have been described above, the technical scope of the present disclosure is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present disclosure. Furthermore, components in different embodiments and modifications can be appropriately combined.

[0524] Furthermore, the effects described in the embodiments in this specification are merely examples and not limitations, and other effects may exist.

[0525] Meanwhile, this technology can be constructed in the following way. (1)

[0527] A solid-state camera device, the solid-state camera device comprising:

[0528] Multiple photoelectric conversion elements, arranged in a matrix,

[0529] Each of the photoelectric conversion elements includes:

[0530] A first electrode and a second electrode are arranged such that their principal planes face each other.

[0531] A photoelectric conversion film is disposed between the first electrode and the second electrode.

[0532] A semiconductor layer is disposed between the photoelectric conversion film and the second electrode, and is configured such that a first surface contacts the photoelectric conversion film and at least a portion of a second surface on the side opposite to the first surface contacts the second electrode.

[0533] An insulating film, the insulating film being disposed within the semiconductor layer, and

[0534] The third electrode is disposed within the insulating film. (2)

[0536] According to the solid-state camera device described in (1),

[0537] The third electrode is provided with a plurality of openings, and a portion of the semiconductor layer extends within each of the openings. (3)

[0539] According to the solid-state camera device described in (1) or (2),

[0540] Wherein, the thickness of the insulating film between the third electrode and the second electrode is less than the thickness of the insulating film between the third electrode and the first electrode. (4)

[0542] According to any one of (1) to (3), the solid-state camera device,

[0543] The film thickness in the direction parallel to the main plane of the insulating film located on the sidewall side of the third electrode is less than the film thickness of the insulating film between the third electrode and the first electrode. (5)

[0545] According to any one of (1) to (4), the solid-state camera device,

[0546] The film thickness decreases from the upper side to the lower side of the third electrode in a direction parallel to the main plane of the insulating film located on the sidewall side of the third electrode. (6)

[0548] According to any one of (1) to (5), the solid-state camera device,

[0549] Each of the photoelectric conversion elements further includes a fourth electrode, which is disposed within the insulating film and located between the third electrode and the first electrode. (7)

[0551] According to the solid-state camera device described in (6),

[0552] The film thickness in the direction parallel to the main plane of the insulating film located on the sidewall side of the third electrode is less than the film thickness of the insulating film located on the sidewall side of the fourth electrode. (8)

[0554] According to any one of (1) to (7), the solid-state camera device,

[0555] The second electrode is divided into multiple electrodes facing the first electrode in different regions. (9)

[0557] According to any one of (1) to (8), the solid-state camera device,

[0558] The width in the direction parallel to the main plane of the second electrode is smaller than the width in the direction parallel to the main plane of the third electrode. (10)

[0560] According to any one of (1) to (9), the solid-state camera device,

[0561] The width in the direction parallel to the main plane of the semiconductor layer decreases from the first electrode side to the second electrode side. (11)

[0563] According to any one of (1) to (10), the solid-state camera device,

[0564] The third electrode includes a plurality of fifth electrodes arranged in a direction perpendicular to the main plane. (12)

[0566] According to any one of (1) to (11), the solid-state camera device,

[0567] The third electrode is divided into multiple regions in a direction perpendicular to the main plane. (13)

[0569] According to any one of (1) to (12), the solid-state camera device,

[0570] In this embodiment, a portion of the surface of the photoelectric conversion film facing the second electrode protrudes toward the second electrode. (14)

[0572] According to the solid-state camera device in (13),

[0573] In this embodiment, a portion of the surface of the first electrode facing the second electrode protrudes towards the second electrode. (15)

[0575] According to any one of (1) to (14), the solid-state camera device,

[0576] The composition in the direction perpendicular to the main plane of the semiconductor layer varies depending on the distance from the second electrode. (16)

[0578] The solid-state camera device according to any one of (1) to (15) further includes:

[0579] An on-chip lens, the on-chip lens being disposed on the side opposite to the second electrode, separated from the first electrode; and

[0580] A color filter, which is arranged relative to the on-plate lens in a direction perpendicular to the main plane and transmits light of a predetermined wavelength. (17)

[0582] According to any one of (1) to (16), the solid-state camera device,

[0583] At least a portion of the semiconductor layer and the photoelectric conversion film contain the same material. (18)

[0585] The solid-state camera device according to any one of (1) to (17) further includes:

[0586] Multiple photoelectric conversion elements are arranged in a direction perpendicular to the main plane. (19)

[0588] According to any one of (1) to (18), the solid-state camera device,

[0589] The photoelectric conversion film is an organic film. (20)

[0591] An electronic device, the electronic device comprising:

[0592] Solid-state camera device;

[0593] An optical system that forms an image of incident light on the light-receiving surface of the solid-state camera; and

[0594] The processor controls the solid-state camera device.

[0595] The solid-state camera device includes multiple photoelectric conversion elements arranged in a matrix.

[0596] Each of the photoelectric conversion elements includes:

[0597] A first electrode and a second electrode are arranged such that their principal planes face each other.

[0598] A photoelectric conversion film is disposed between the first electrode and the second electrode.

[0599] A semiconductor layer is disposed between the photoelectric conversion film and the second electrode, and is configured such that a first surface contacts the photoelectric conversion film and at least a portion of a second surface on the side opposite to the first surface contacts the second electrode.

[0600] An insulating film, the insulating film being disposed within the semiconductor layer, and

[0601] The third electrode is disposed within the insulating film. (twenty one)

[0603] A method for manufacturing a solid-state camera device, the method comprising:

[0604] A first insulating film is formed on the first surface of a semiconductor substrate;

[0605] A readout electrode is formed in a first region on the first insulating film;

[0606] A second insulating film is formed on the first electrode;

[0607] A first transparent electrode material film is formed on the second insulating film;

[0608] A third insulating film is formed on the first transparent electrode material film;

[0609] A second transparent electrode material film is formed on the third insulating film;

[0610] A fourth insulating film is formed on the second transparent electrode material film;

[0611] An opening is formed in the second to fourth insulating films and the first and second transparent electrode material films to expose a portion of the readout electrode;

[0612] A semiconductor layer is formed on the fourth insulating film and in the opening;

[0613] A photoelectric conversion film is formed on the semiconductor layer; and

[0614] A common electrode is formed on the photoelectric conversion film. (twenty two)

[0616] A solid-state camera device, the solid-state camera device comprising:

[0617] Multiple photoelectric conversion elements, arranged in a matrix,

[0618] Each of the photoelectric conversion elements includes:

[0619] A first electrode and a second electrode are arranged such that their principal planes face each other.

[0620] A photoelectric conversion film is disposed between the first electrode and the second electrode.

[0621] A semiconductor layer is disposed between the photoelectric conversion film and the second electrode, and is configured such that a first surface contacts the photoelectric conversion film and a second surface on the side opposite to the first surface contacts the second electrode.

[0622] A first insulating film, the first insulating film being disposed within the semiconductor layer, and

[0623] The third electrode is disposed within the first insulating film. (twenty three)

[0625] According to the solid-state camera device described in (22),

[0626] The third electrode is provided with a plurality of openings, and a portion of the semiconductor layer extends within each of the openings. (twenty four)

[0628] According to the solid-state camera device described in (22) or (23),

[0629] Wherein, the thickness of the first insulating film between the third electrode and the second electrode is less than the thickness of the first insulating film between the third electrode and the first electrode. (25)

[0631] According to any one of (22) to (24), the solid-state camera device,

[0632] Wherein, the film thickness in the direction parallel to the main plane of the first insulating film located on the sidewall side of the third electrode is less than the film thickness of the first insulating film between the third electrode and the first electrode. (26)

[0634] According to any one of (22) to (25), the solid-state camera device,

[0635] The film thickness in the direction parallel to the main plane of the first insulating film located on the sidewall side of the third electrode decreases from the upper side to the lower side of the third electrode. (27)

[0637] According to any one of (22) to (26), the solid-state camera device,

[0638] The second electrode is divided into multiple electrodes facing the first electrode in different regions. (28)

[0640] According to any one of (22) to (27), the solid-state camera device

[0641] The width in the direction parallel to the main plane of the second electrode is smaller than the width in the direction parallel to the main plane of the third electrode. (29)

[0643] According to any one of (22) to (28), the solid-state camera device,

[0644] The width in the direction parallel to the main plane of the semiconductor layer decreases from the first electrode side to the second electrode side. (30)

[0646] The solid-state camera device according to any one of (22) to (29) further includes:

[0647] A second insulating film is disposed in the region between the third electrode and the second electrode that contacts the second electrode; and

[0648] The fourth electrode is disposed within the second insulating film. (31)

[0650] According to the solid-state camera device described in (29),

[0651] Wherein, at least a portion of the surface of the second electrode side of the semiconductor layer is an inclined region tilted relative to the main plane, and

[0652] The solid-state camera device further includes a fifth electrode, which is disposed near the inclined region outside the semiconductor layer. (32)

[0654] According to any one of (22) to (31), the solid-state camera device,

[0655] The third electrode includes a plurality of fifth electrodes arranged in a direction perpendicular to the main plane. (33)

[0657] According to any one of (22) to (32), the solid-state camera device,

[0658] The third electrode is divided into multiple regions in a direction perpendicular to the main plane. (34)

[0660] According to any one of (22) to (33), the solid-state camera device,

[0661] In this embodiment, a portion of the surface of the photoelectric conversion film facing the second electrode protrudes toward the second electrode. (35)

[0663] According to the solid-state camera device of (34),

[0664] In this embodiment, a portion of the surface of the first electrode facing the second electrode protrudes toward the second electrode. (36)

[0666] According to any one of (22) to (35), the solid-state camera device,

[0667] The composition in the direction perpendicular to the main plane of the semiconductor layer varies depending on the distance from the second electrode. (37)

[0669] The solid-state camera device according to any one of (22) to (36) further includes:

[0670] An on-chip lens, the on-chip lens being disposed on the side opposite to the second electrode, separated from the first electrode; and

[0671] A color filter, which is arranged relative to the on-plate lens in a direction perpendicular to the main plane and transmits light of a predetermined wavelength. (38)

[0673] According to any one of (22) to (37), the solid-state camera device

[0674] The photoelectric conversion film and at least a portion of the semiconductor layer contain the same material. (39)

[0676] The solid-state camera device according to any one of (22) to (38) further includes:

[0677] Multiple photoelectric conversion elements are arranged in a direction perpendicular to the main plane. (40)

[0679] According to any one of (22) to (39), the solid-state camera device

[0680] The photoelectric conversion film is an organic film. (41)

[0682] An electronic device, the electronic device comprising:

[0683] Solid-state camera device;

[0684] An optical system that forms an image of incident light on the light-receiving surface of the solid-state camera; and

[0685] The processor controls the solid-state camera device.

[0686] The solid-state camera device includes multiple photoelectric conversion elements arranged in a matrix.

[0687] Each of the photoelectric conversion elements includes:

[0688] A first electrode and a second electrode are arranged such that their principal planes face each other.

[0689] A photoelectric conversion film is disposed between the first electrode and the second electrode.

[0690] A semiconductor layer is disposed between the photoelectric conversion film and the second electrode, and is configured such that a first surface contacts the photoelectric conversion film and a second surface on the side opposite to the first surface contacts the second electrode.

[0691] A first insulating film, wherein the first insulating film is disposed within the semiconductor layer, and

[0692] The third electrode is disposed within the first insulating film. (42)

[0694] A method for manufacturing a solid-state camera device, the method comprising:

[0695] A first insulating film is formed on the first surface of a semiconductor substrate;

[0696] A readout electrode is formed in a first region on the first insulating film;

[0697] A first semiconductor layer is formed on the readout electrode;

[0698] A second insulating film is formed on the first semiconductor layer;

[0699] A transparent electrode material film is formed on the second insulating film;

[0700] A third insulating film is formed on the transparent electrode material film;

[0701] An opening is formed in the second insulating film, the third insulating film, and the transparent electrode material film to expose a portion of the readout electrode;

[0702] A fourth insulating film is formed, covering the upper part of the third insulating film and the interior of the opening;

[0703] A second semiconductor layer is formed on the fourth insulating film on the third insulating film and on the fourth insulating film in the opening;

[0704] A photoelectric conversion film is formed on the second semiconductor layer; and

[0705] A common electrode is formed on the photoelectric conversion film.

[0706] List of reference numerals

[0707] 100 Solid-state camera devices (image sensors)

[0708] 101 Semiconductor Substrate

[0709] 102, 104 P-type semiconductor regions

[0710] 103, 105 N-type semiconductor regions

[0711] 106 Insulating Film

[0712] 111 Insulation layer

[0713] 112, 1612 common electrode

[0714] 113, 1613 photoelectric conversion film

[0715] Semiconductor layers 114, 114A, 514, 524, 914, 1514, 1514a, 1514b, 1514c

[0716] 114A convex part

[0717] 115, 215, 615, 715A, 715B, 815A, 815B, 2015 storage electrodes

[0718] 115A, 315A transparent electrode material film

[0719] 116, 116A, 116B, 116C, 216, 316, 316A, 316B, 316C, 516 insulating films

[0720] 117, 417, 517, 617A, 617B, 817A, 817B, 2014 Readout Electrodes

[0721] 118, 122 wiring

[0722] 119 Through-electrode

[0723] 120 Stored Charge

[0724] 121 Wiring Layer

[0725] 131 Protective Film

[0726] 132 Planarization film

[0727] 133 On-plate lens

[0728] 315 Shielding Electrode

[0729] 515 Collection Electrode

[0730] 525 Modulation Electrode

[0731] Areas 615A and 615B

[0732] 1116, 2016 Memory Electrode

[0733] 1833 Color Filter

[0734] 3000 electronic devices

[0735] 3020 camera lens

[0736] 3030 storage unit

[0737] 3040 processor

[0738] 3101 pixel array section

[0739] 3102 Vertical Drive Circuit

[0740] 3102A Voltage Application Circuit

[0741] Processing circuits for 3103, 3103A, and 3103B

[0742] 3104 Horizontal Drive Circuit

[0743] 3105 System Control Unit

[0744] 3108 Signal Processing Unit

[0745] 3109 Data Storage Unit

[0746] 3110 pixels

[0747] 3110B, 3110G, 3110R pixels

[0748] 3121 Optical Receiver Chip

[0749] 3122 circuit chip

[0750] A1, A2, A3, A4 are open

[0751] AMP1, AMP2, AMP3 Amplifying Transistors

[0752] FD1, FD2, FD3 floating diffusion regions

[0753] LD pixel drive line

[0754] PD1, PD2 photodiodes

[0755] PD3, PD203 Organic Photoelectric Conversion Components

[0756] RST1, RST2, RST3 reset transistors

[0757] S1 and S2 systems

[0758] SEL1, SEL2, SEL3 select transistors

[0759] TRG1, TRG2 transfer transistors

[0760] VSL Vertical Signal Line

Claims

1. A solid-state camera device, the solid-state camera device comprising: Multiple photoelectric conversion elements, arranged in a matrix, Each of the photoelectric conversion elements includes: A first electrode and a second electrode are arranged such that their principal planes face each other. A photoelectric conversion film is disposed between the first electrode and the second electrode. A semiconductor layer is disposed between the photoelectric conversion film and the second electrode, and is configured such that a first surface contacts the photoelectric conversion film and at least a portion of a second surface on the side opposite the first surface contacts the second electrode. An insulating film, the insulating film being disposed within the semiconductor layer, and The third electrode is disposed within the insulating film. The thickness of the insulating film located on the sidewall of the third electrode decreases from the upper side to the lower side of the third electrode in a direction parallel to the main plane.

2. The solid-state camera device according to claim 1, wherein, The third electrode is provided with a plurality of openings, and a portion of the semiconductor layer extends within each of the openings.

3. The solid-state camera device according to claim 1, wherein The thickness of the insulating film between the third electrode and the second electrode is less than the thickness of the insulating film between the third electrode and the first electrode.

4. The solid-state camera device according to claim 1, in, The thickness of the insulating film located on the sidewall of the third electrode in the direction parallel to the main plane is less than the thickness of the insulating film between the third electrode and the first electrode.

5. The solid-state camera device according to claim 1, in, The second electrode is divided into multiple electrodes facing the first electrode in different regions.

6. The solid-state camera device according to claim 1, in, The composition of the semiconductor layer in the direction perpendicular to the main plane varies depending on the distance from the second electrode.

7. The solid-state camera device according to claim 1, further comprising: An on-chip lens, wherein the on-chip lens is disposed on the side opposite to the second electrode, separated from the first electrode; as well as A color filter, which is arranged relative to the on-plate lens in a direction perpendicular to the main plane and transmits light of a predetermined wavelength.

8. The solid-state camera device according to claim 1, in, At least a portion of the semiconductor layer and the photoelectric conversion film contain the same material.

9. The solid-state camera device according to claim 1, comprising: Multiple photoelectric conversion elements are arranged in a direction perpendicular to the main plane.

10. The solid-state camera device according to claim 1, in, The photoelectric conversion film is an organic film.

11. A solid-state camera device, the solid-state camera device comprising: Multiple photoelectric conversion elements, arranged in a matrix, Each of the photoelectric conversion elements includes: A first electrode and a second electrode are arranged such that their principal planes face each other. A photoelectric conversion film is disposed between the first electrode and the second electrode. A semiconductor layer is disposed between the photoelectric conversion film and the second electrode, and is configured such that a first surface contacts the photoelectric conversion film and at least a portion of a second surface on the side opposite the first surface contacts the second electrode. An insulating film, the insulating film being disposed within the semiconductor layer, and The third electrode is disposed within the insulating film. Each of the photoelectric conversion elements further includes a fourth electrode, which is disposed within the insulating film and located between the third electrode and the first electrode.

12. The solid-state camera device according to claim 11, in, The third electrode is provided with a plurality of openings, and a portion of the semiconductor layer extends within each of the openings.

13. The solid-state camera device according to claim 11, in, The thickness of the insulating film between the third electrode and the second electrode is less than the thickness of the insulating film between the third electrode and the first electrode.

14. The solid-state camera device according to claim 11, in, The thickness of the insulating film located on the sidewall of the third electrode in the direction parallel to the main plane is less than the thickness of the insulating film between the third electrode and the first electrode.

15. The solid-state camera device according to claim 11, in, The thickness of the insulating film located on the sidewall side of the third electrode in the direction parallel to the main plane is less than the thickness of the insulating film located on the sidewall side of the fourth electrode.

16. The solid-state camera device according to claim 11, in, The second electrode is divided into multiple electrodes facing the first electrode in different regions.

17. The solid-state camera device according to claim 11, in, The composition of the semiconductor layer in the direction perpendicular to the main plane varies depending on the distance from the second electrode.

18. The solid-state camera device according to claim 11, further comprising: An on-chip lens, wherein the on-chip lens is disposed on the side opposite to the second electrode, separated from the first electrode; as well as A color filter, which is arranged relative to the on-plate lens in a direction perpendicular to the main plane and transmits light of a predetermined wavelength.

19. The solid-state camera device according to claim 11, in, At least a portion of the semiconductor layer and the photoelectric conversion film contain the same material.

20. The solid-state camera device according to claim 11, comprising: Multiple photoelectric conversion elements are arranged in a direction perpendicular to the main plane.

21. The solid-state camera device according to claim 11, in, The photoelectric conversion film is an organic film.

22. A solid-state camera device, the solid-state camera device comprising: Multiple photoelectric conversion elements, arranged in a matrix, Each of the photoelectric conversion elements includes: A first electrode and a second electrode are arranged such that their principal planes face each other. A photoelectric conversion film is disposed between the first electrode and the second electrode. A semiconductor layer is disposed between the photoelectric conversion film and the second electrode, and is configured such that a first surface contacts the photoelectric conversion film and at least a portion of a second surface on the side opposite the first surface contacts the second electrode. An insulating film, the insulating film being disposed within the semiconductor layer, and The third electrode is disposed within the insulating film. The width of the second electrode in the direction parallel to the main plane is smaller than the width of the third electrode in the direction parallel to the main plane.

23. The solid-state camera device according to claim 22, in, The third electrode is provided with a plurality of openings, and a portion of the semiconductor layer extends within each of the openings.

24. The solid-state camera device according to claim 22, in, The thickness of the insulating film between the third electrode and the second electrode is less than the thickness of the insulating film between the third electrode and the first electrode.

25. The solid-state camera device according to claim 22, in, The thickness of the insulating film located on the sidewall of the third electrode in the direction parallel to the main plane is less than the thickness of the insulating film between the third electrode and the first electrode.

26. The solid-state camera device according to claim 22, in, The second electrode is divided into multiple electrodes facing the first electrode in different regions.

27. The solid-state camera device according to claim 22, in, The composition of the semiconductor layer in the direction perpendicular to the main plane varies depending on the distance from the second electrode.

28. The solid-state camera device according to claim 22, further comprising: An on-chip lens, wherein the on-chip lens is disposed on the side opposite to the second electrode, separated from the first electrode; as well as A color filter, which is arranged relative to the on-plate lens in a direction perpendicular to the main plane and transmits light of a predetermined wavelength.

29. The solid-state camera device according to claim 22, in, At least a portion of the semiconductor layer and the photoelectric conversion film contain the same material.

30. The solid-state camera device according to claim 22, comprising: Multiple photoelectric conversion elements are arranged in a direction perpendicular to the main plane.

31. The solid-state camera device according to claim 22, in, The photoelectric conversion film is an organic film.

32. A solid-state camera device, the solid-state camera device comprising: Multiple photoelectric conversion elements, arranged in a matrix, Each of the photoelectric conversion elements includes: A first electrode and a second electrode are arranged such that their principal planes face each other. A photoelectric conversion film is disposed between the first electrode and the second electrode. A semiconductor layer is disposed between the photoelectric conversion film and the second electrode, and is configured such that a first surface contacts the photoelectric conversion film and at least a portion of a second surface on the side opposite the first surface contacts the second electrode. An insulating film, the insulating film being disposed within the semiconductor layer, and The third electrode is disposed within the insulating film. The width of the semiconductor layer in the direction parallel to the main plane decreases from the first electrode side to the second electrode side.

33. The solid-state camera device according to claim 32, in, The third electrode is provided with a plurality of openings, and a portion of the semiconductor layer extends within each of the openings.

34. The solid-state camera device according to claim 32, in, The thickness of the insulating film between the third electrode and the second electrode is less than the thickness of the insulating film between the third electrode and the first electrode.

35. The solid-state camera device according to claim 32, in, The thickness of the insulating film located on the sidewall of the third electrode in the direction parallel to the main plane is less than the thickness of the insulating film between the third electrode and the first electrode.

36. The solid-state camera device according to claim 32, in, The second electrode is divided into multiple electrodes facing the first electrode in different regions.

37. The solid-state camera device according to claim 32, in, The composition of the semiconductor layer in the direction perpendicular to the main plane varies depending on the distance from the second electrode.

38. The solid-state camera device according to claim 32, further comprising: An on-chip lens, wherein the on-chip lens is disposed on the side opposite to the second electrode, separated from the first electrode; as well as A color filter, which is arranged relative to the on-plate lens in a direction perpendicular to the main plane and transmits light of a predetermined wavelength.

39. The solid-state camera device according to claim 32, in, At least a portion of the semiconductor layer and the photoelectric conversion film contain the same material.

40. The solid-state camera device according to claim 32, comprising: Multiple photoelectric conversion elements are arranged in a direction perpendicular to the main plane.

41. The solid-state camera device according to claim 32, in, The photoelectric conversion film is an organic film.

42. A solid-state camera device, the solid-state camera device comprising: Multiple photoelectric conversion elements, arranged in a matrix, Each of the photoelectric conversion elements includes: A first electrode and a second electrode are arranged such that their principal planes face each other. A photoelectric conversion film is disposed between the first electrode and the second electrode. A semiconductor layer is disposed between the photoelectric conversion film and the second electrode, and is configured such that a first surface contacts the photoelectric conversion film and at least a portion of a second surface on the side opposite the first surface contacts the second electrode. An insulating film, the insulating film being disposed within the semiconductor layer, and The third electrode is disposed within the insulating film. The third electrode includes a plurality of fifth electrodes arranged in a direction perpendicular to the main plane.

43. The solid-state camera device according to claim 42, in, The third electrode is provided with a plurality of openings, and a portion of the semiconductor layer extends within each of the openings.

44. The solid-state camera device according to claim 42, in, The thickness of the insulating film between the third electrode and the second electrode is less than the thickness of the insulating film between the third electrode and the first electrode.

45. The solid-state camera device according to claim 42, in, The thickness of the insulating film located on the sidewall of the third electrode in the direction parallel to the main plane is less than the thickness of the insulating film between the third electrode and the first electrode.

46. ​​The solid-state camera device according to claim 42, in, The second electrode is divided into multiple electrodes facing the first electrode in different regions.

47. The solid-state camera device according to claim 42, in, The composition of the semiconductor layer in the direction perpendicular to the main plane varies depending on the distance from the second electrode.

48. The solid-state camera device according to claim 42, further comprising: An on-chip lens, wherein the on-chip lens is disposed on the side opposite to the second electrode, separated from the first electrode; as well as A color filter, which is arranged relative to the on-plate lens in a direction perpendicular to the main plane and transmits light of a predetermined wavelength.

49. The solid-state camera device according to claim 42, in, At least a portion of the semiconductor layer and the photoelectric conversion film contain the same material.

50. The solid-state camera device according to claim 42, comprising: Multiple photoelectric conversion elements are arranged in a direction perpendicular to the main plane.

51. The solid-state camera device according to claim 42, in, The photoelectric conversion film is an organic film.

52. A solid-state camera device, the solid-state camera device comprising: Multiple photoelectric conversion elements, arranged in a matrix, Each of the photoelectric conversion elements includes: A first electrode and a second electrode are arranged such that their principal planes face each other. A photoelectric conversion film is disposed between the first electrode and the second electrode. A semiconductor layer is disposed between the photoelectric conversion film and the second electrode, and is configured such that a first surface contacts the photoelectric conversion film and at least a portion of a second surface on the side opposite the first surface contacts the second electrode. An insulating film, the insulating film being disposed within the semiconductor layer, and The third electrode is disposed within the insulating film. In this embodiment, a portion of the surface of the photoelectric conversion film facing the second electrode protrudes toward the second electrode.

53. The solid-state camera device according to claim 52, in, The third electrode is provided with a plurality of openings, and a portion of the semiconductor layer extends within each of the openings.

54. The solid-state camera device according to claim 52, in, The thickness of the insulating film between the third electrode and the second electrode is less than the thickness of the insulating film between the third electrode and the first electrode.

55. The solid-state camera device according to claim 52, in, The thickness of the insulating film located on the sidewall of the third electrode in the direction parallel to the main plane is less than the thickness of the insulating film between the third electrode and the first electrode.

56. The solid-state camera device according to claim 52, in, The second electrode is divided into multiple electrodes facing the first electrode in different regions.

57. The solid-state camera device according to claim 52, in, A portion of the surface of the first electrode facing the second electrode protrudes toward the second electrode.

58. The solid-state camera device according to claim 52, in, The composition of the semiconductor layer in the direction perpendicular to the main plane varies depending on the distance from the second electrode.

59. The solid-state camera device according to claim 52, further comprising: An on-chip lens, wherein the on-chip lens is disposed on the side opposite to the second electrode, separated from the first electrode; as well as A color filter, which is arranged relative to the on-plate lens in a direction perpendicular to the main plane and transmits light of a predetermined wavelength.

60. The solid-state camera device according to claim 52, in, At least a portion of the semiconductor layer and the photoelectric conversion film contain the same material.

61. The solid-state camera device according to claim 52, comprising: Multiple photoelectric conversion elements are arranged in a direction perpendicular to the main plane.

62. The solid-state camera device according to claim 52, in, The photoelectric conversion film is an organic film.

63. An electronic device, the electronic device comprising: Solid-state camera device; An optical system that forms an image of incident light on the light-receiving surface of the solid-state camera device; as well as The processor controls the solid-state camera device. The solid-state camera device is the solid-state camera device according to any one of claims 1 to 62.

Images