Optical device and information processing device

Abstract

The light emitting device includes: a first light emitting element chip; a second light emitting element chip having a larger light output than the first light emitting element chip, configured to be driven independently of the first light emitting element chip, and arranged side by side with the first light emitting element chip; and a light diffusion member including: a first region provided on an emission path of the first light emitting element chip; and a second region provided on an emission path of the second light emitting element chip, the second region having a larger diffusion angle than the first region.

Description

Technical Field

[0001] This invention relates to optical devices and information processing devices. Background Technology

[0002] Patent Document 1 discloses a camera device comprising: a light source; a diffuser having a plurality of lenses arranged adjacent to each other on a predetermined plane to diffuse light emitted from the light source; and an imaging element that receives reflected light from a subject after the light has been diffused by the diffuser. Here, the plurality of lenses are configured such that the period of the interference fringes in the diffused light is three pixels or less.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-54769 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] A structure for measuring the three-dimensional shape of an object is known by diffusing light emitted from a light-emitting element chip through a light-diffusing member to irradiate the object under test. From the viewpoint of energy saving, a structure comprising: a proximity detection light-emitting element chip that detects whether the object under test is within a predetermined distance; and a three-dimensional measurement light-emitting element chip that diffuses light with a higher light output than that of the proximity detection light-emitting element chip onto the object under test via the light-diffusing member.

[0008] Here, when a common light diffusion component is used to cover the light-emitting element chip for proximity detection and the light-emitting element chip for three-dimensional measurement, the light for proximity detection and the light for three-dimensional measurement are diffused in the same way through the light diffusion component, thereby reducing the light density on the irradiated surface of the object being measured, and sometimes making proximity detection difficult.

[0009] An exemplary embodiment of the present invention relates to providing a light-emitting device comprising: a first light-emitting element chip; and a second light-emitting element chip having a larger light output than the first light-emitting element chip and configured to be driven independently of the first light-emitting element chip. A light diffusion member is provided on the emission paths of the first light-emitting element chip and the second light-emitting element chip. In the above structure, compared with the case where light emitted from the first light-emitting element chip diffuses through the light diffusion member at the same diffusion angle as light emitted from the second light-emitting element chip, the reduction in light density of light emitted from the first light-emitting element chip on the irradiation surface can be suppressed.

[0010] Methods for solving problems

[0011] [1] According to one aspect of the present invention, a light-emitting device is provided, comprising: a first light-emitting element chip; a second light-emitting element chip having a larger light output than the first light-emitting element chip, configured to be driven independently of the first light-emitting element chip, and arranged side by side with the first light-emitting element chip; and a light-diffusing member comprising: a first region disposed on the emission path of the first light-emitting element chip; and a second region disposed on the emission path of the second light-emitting element chip, wherein the diffusion angle of the second region is larger than the diffusion angle of the first region.

[0012] [2] In the light-emitting device as described in [1], the first region may also be configured to prevent the divergence angle of light emitted from the first light-emitting element chip from increasing.

[0013] [3] In the light-emitting device as described in [2], the surface of the light-diffusing component corresponding to the first region may also be a plane.

[0014] [4] In the light-emitting device as described in [2], an optical element that narrows the divergence angle of light emitted from the first light-emitting element chip may also be provided in the first region.

[0015] [5] In the light-emitting device as described in [2], the first region may be a through hole disposed in the light-diffusing component.

[0016] [6] In any of the light-emitting devices described in any one of [1] to [5], the first region may be surrounded by the second region.

[0017] [7] In the light-emitting device as described in [2], the first light-emitting element chip may include at least one first light-emitting element, the second light-emitting element chip may include at least one second light-emitting element, and the divergence angle of the light emitted from the first light-emitting element toward the first region may be narrower than the divergence angle of the light emitted from the second light-emitting element toward the second region.

[0018] [8] In the light-emitting device described in [7], the first light-emitting element may also be a laser element that emits single-mode light.

[0019] [9] In the light-emitting device described in [8], the first light-emitting element may be a vertical cavity surface-emitting laser element with a long resonant cavity structure, and the resonant cavity length is 5λ or more and 20λ or less when the oscillation wavelength is λ.

[0020]

[10] In the light-emitting device described in [7], the second light-emitting element may also be a laser element that emits multimode light.

[0021]

[11] In the light-emitting device as described in [1], the distance from the emission surface of the first light-emitting element chip to the light-diffusing component may be closer than the distance from the emission surface of the second light-emitting element chip to the light-diffusing component.

[0022]

[12] In the light-emitting device as described in [7], the first region may be located at a position that does not overlap with the full width at half maximum (FWHM) region of the second light-emitting element constituting the second light-emitting element chip.

[0023]

[13] In the light-emitting device as described in [7], the at least one second light-emitting element may include a plurality of second light-emitting elements, wherein the arrangement interval between the first light-emitting element and the second light-emitting element is wider than the arrangement interval between the plurality of second light-emitting elements.

[0024]

[14] In the light-emitting device as described in

[13] , the first light-emitting element and the second light-emitting element may both be vertical cavity surface-emitting laser elements, and the light-emitting device may be driven in such a way that the light output emitted from a vertical cavity surface-emitting laser element that is the first light-emitting element is lower than the light output emitted from a vertical cavity surface-emitting laser element that is the second light-emitting element.

[0025]

[15] In the light-emitting device described in

[13] , the first light-emitting element and the second light-emitting element may both be vertical cavity surface-emitting laser elements, and the vertical cavity surface-emitting laser element serving as the first light-emitting element may be driven by light output with a lower power conversion efficiency than the vertical cavity surface-emitting laser element serving as the second light-emitting element.

[0026]

[16] In the light-emitting device as described in

[14] or

[15] , the light-emitting device may also be driven in such a way that the light output of a vertical cavity surface-emitting laser element serving as the first light-emitting element is in the range of 1mW to 4mW.

[0027]

[17] In any of the light-emitting devices described in any of

[14] to

[16] , the light-emitting device may also be driven in such a way that the light output of a vertical cavity surface-emitting laser element serving as the second light-emitting element is in the range of 4mW to 8mW.

[0028]

[18] In any of the light-emitting devices described in any of

[14] to

[17] , the number of vertical cavity surface-emitting laser elements serving as the first light-emitting element may be one or more and 50 or less.

[0029]

[19] In any of the light-emitting devices described in any of

[14] to

[18] , the number of vertical cavity surface-emitting laser elements serving as the second light-emitting element may be more than 100 and less than 1,000.

[0030]

[20] In the light-emitting device as described in [1], it may also include: a sidewall that surrounds the first light-emitting element chip and the second light-emitting element chip, the first light-emitting element chip and the second light-emitting element chip being covered by the light-diffusing component supported by the sidewall.

[0031]

[21] In the light-emitting device as described in [1], it may also include: a first light-receiving part that receives reflected light emitted from the second light-emitting element chip and reflected by the second region of the light-diffusing member, the second light-emitting element chip having: a first side surface; a second side surface opposite to the first side surface; a third side surface connecting the first side surface and the second side surface; and a fourth side surface that is disposed opposite to the third side surface and connected to the first side surface and the second side surface, the first light-receiving part being disposed on the first side surface and the first light-emitting element chip being disposed on the second side surface.

[0032]

[22] In the light-emitting device as described in

[21] , it may also include: a plurality of wirings connected to the second light-emitting element chip and supplying power to the second light-emitting element chip, the plurality of wirings being disposed on the third side and the fourth side.

[0033]

[23] According to another aspect of the present invention, an optical device is provided, comprising: a light-emitting device as described in any one of [1] to

[22] ; and a second light-receiving unit that receives first reflected light emitted from the first light-emitting element chip of the light-emitting device and reflected by a measured object, and second reflected light emitted from the second light-emitting element chip of the light-emitting device and reflected by the measured object, wherein the second light-receiving unit outputs a signal corresponding to the time from when the light is emitted from the first light-emitting element chip to when the light is received by the second light-receiving unit, and a signal corresponding to the time from when the light is emitted from the second light-emitting element chip to when the light is received by the second light-receiving unit.

[0034]

[24] According to another aspect of the present invention, an optical device is provided, comprising: a light-emitting device as described in any one of [1] to

[22] ; a second light-receiving unit that receives a first reflected light emitted from the first light-emitting element chip of the light-emitting device and reflected by a measured object, and a second reflected light emitted from the second light-emitting element chip of the light-emitting device and reflected by the measured object; and a control unit that controls the second light-emitting element chip to emit light when the first reflected light indicates that the measured object is within a predetermined distance.

[0035]

[25] According to another aspect of the present invention, an information processing apparatus is provided, comprising: an optical device as described in

[23] or

[24] ; and a shape determination unit that determines the three-dimensional shape of the object to be measured based on the second reflected light emitted from a plurality of second light-emitting element chips of the optical device, reflected by the object to be measured, and received by the second light-receiving unit of the optical device.

[0036]

[26] In the information processing apparatus described in

[25] , it may also include an authentication processing unit that performs authentication processing related to the use of the information processing apparatus based on the determination result of the shape determination unit.

[0037] Invention Effects

[0038] According to the light-emitting device described in [1], compared with the case where the light emitted from the first light-emitting element chip diffuses through the light diffusion component at the same diffusion angle as the light emitted from the second light-emitting element chip, the reduction in light density of the light emitted from the first light-emitting element chip on the irradiation surface can be suppressed.

[0039] According to the light-emitting device described in [2], compared with the case where the divergence angle of the light emitted from the first light-emitting element chip increases, it is possible to suppress the decrease in the light density of the light emitted from the first light-emitting element chip on the irradiation surface.

[0040] According to the light-emitting device described in [3], compared with the case of having a shape that diffuses light, it is possible to suppress the decrease in light density on the irradiated surface of the light emitted from the first light-emitting element chip.

[0041] According to the light-emitting device described in [4], compared with the case where the divergence angle is not narrowed, it is possible to suppress the decrease in light density on the irradiation surface of the light emitted from the first light-emitting element chip.

[0042] According to the light-emitting device described in [5], compared with the case where the first region has a shape that diffuses light, it is possible to suppress the decrease in light density on the irradiated surface of the light emitted from the first light-emitting element chip.

[0043] According to the light-emitting device described in [6], compared with the case where the first region is not surrounded by the second region, it is possible to suppress the light emitted from the second light-emitting element chip from spreading out of the first region instead of spreading in the second region.

[0044] According to the light-emitting device described in [7], compared with the case where the divergence angle of the light toward the first region is wide, it is possible to suppress the decrease in light density on the irradiated surface of the light emitted from the first light-emitting element chip.

[0045] According to the light-emitting device described in [8], compared with the case of a laser element that emits multimode light, it is easier to suppress the decrease in light density on the irradiated surface.

[0046] According to the light-emitting device described in [9], the divergence angle is narrowed compared to the case of a typical single-mode vertical cavity surface-emitting laser element with a resonant cavity length consistent with λ.

[0047] According to the light-emitting device described in

[10] , it is easier to obtain higher light output compared to the case where it is composed of laser elements that emit single-mode light.

[0048] According to the light-emitting device described in

[11] , the area of ​​the first region can be easily reduced compared to the case where the distance from the emission surface of the first light-emitting element chip to the light diffusion component is far.

[0049] According to the light-emitting device described in

[12] , compared with the case where it is disposed in an overlapping area, it is possible to reduce the light emitted from the second light-emitting element chip and transmitted through the first area.

[0050] According to the light-emitting device described in

[13] , compared with the case where the arrangement interval between the second light-emitting elements is the same as the interval between the first light-emitting element and the second light-emitting element, it is possible to suppress the case where the light emitted from the second light-emitting element chip does not diffuse in the second region but is emitted from the first region to the outside.

[0051] According to the light-emitting device described in

[14] , compared with the case where the light output of the vertical cavity surface-emitting laser element as the first light-emitting element is consistent with the light output of the vertical cavity surface-emitting laser element as the second light-emitting element, it is possible to suppress the decrease in light density on the irradiation surface of the light emitted from the vertical cavity surface-emitting laser element as the first light-emitting element.

[0052] According to the light-emitting device described in

[15] , compared with the case where the power conversion efficiency of the vertical cavity surface-emitting laser element serving as the first light-emitting element is the same as that of the vertical cavity surface-emitting laser element serving as the second light-emitting element, it is possible to suppress the decrease in the light density on the irradiation surface of the light emitted from the vertical cavity surface-emitting laser element serving as the first light-emitting element.

[0053] According to the light-emitting device described in

[16] , it is able to emit light with a narrower divergence angle compared to the case where it is driven in a region exceeding 4mW.

[0054] According to the light-emitting device described in

[17] , the power conversion efficiency of the vertical cavity surface-emitting laser element, which serves as the second light-emitting element, can be improved compared to the case where it is driven in a region of less than 4mW.

[0055] According to the light-emitting device described in

[18] , it is possible to provide a light-emitting device having a light-emitting element chip suitable for proximity detection.

[0056] According to the light-emitting device described in

[19] , it is possible to provide a light-emitting device having a light-emitting element chip suitable for three-dimensional measurement in the TOF mode.

[0057] According to the light-emitting device described in

[20] , even in a structure in which the first light-emitting element chip and the second light-emitting element chip are covered by sidewalls and light-diffusing components, the decrease in light density of light emitted from the first light-emitting element chip on the irradiation surface can be suppressed compared to the case where light emitted from the first light-emitting element chip diffuses at the same diffusion angle as light emitted from the second light-emitting element chip.

[0058] According to the light-emitting device described in

[21] , compared with the case where the first light-emitting element chip, the first light-emitting element chip, and the first light-receiving part are arranged in the order of the second light-emitting element chip, the first light-emitting element chip, and the first light-receiving part, it is easier to arrange the first light-receiving part and the second light-emitting element chip close to each other.

[0059] According to the light-emitting device described in

[22] , it is easier to supply a larger amount of power compared to the case where power is supplied from one side.

[0060] According to the optical device described in

[23] , both proximity detection and three-dimensional measurement can be performed.

[0061] According to the optical device described in

[24] , light will not be emitted from the second light-emitting element chip if the object being measured is not within a predetermined distance.

[0062] According to the information processing device described in

[25] , three-dimensional shape can be determined.

[0063] According to the information processing device described in

[26] , authentication processing based on three-dimensional shape can be performed. Attached Figure Description

[0064] Figure 1 This is a diagram illustrating an example of an information processing apparatus that applies this exemplary embodiment.

[0065] Figure 2 This is a block diagram illustrating the structure of the information processing apparatus according to this exemplary embodiment.

[0066] Figure 3 Here are examples of top and cross-sectional views of an optical device applying this exemplary embodiment, (a) being a top view and (b) being a cross-sectional view along line IIIB-IIIB of (a).

[0067] Figure 4 This is a diagram illustrating the structure of a proximity detection chip and a 3D shape measurement chip.

[0068] Figure 5 This is a diagram illustrating the cross-sectional structure of a VCSEL in a proximity detection chip.

[0069] Figure 6 This is a diagram illustrating the cross-sectional structure of a VCSEL in a chip used for 3D shape measurement.

[0070] Figure 7 This is a graph illustrating the relationship between the optical output and power conversion efficiency of a typical VCSEL.

[0071] Figure 8 The following is a diagram illustrating an example of the structure of a diffuser plate: (a) is a top view, and (b) is a cross-sectional view along line VIIIB-VIIIB of (a).

[0072] Figure 9 The figures show modified examples of the diffuser plate, (a) showing the first modified example of the diffuser plate, and (b) showing the second modified example of the diffuser plate.

[0073] Figure 10 This is a diagram illustrating a 3D sensor.

[0074] Figure 11 This is a flowchart for performing authentication processes related to the use of information processing devices.

[0075] Figure 12 This diagram illustrates the low-side drive.

[0076] Figure 13 The diagram illustrates the configuration of the proximity detection chip, the 3D shape measurement chip, and the light receiving element for monitoring light intensity in the light-emitting device. (a) shows the configuration described as an exemplary embodiment, (b) shows a first variation of the configuration, (c) shows a second variation of the configuration, and (d) shows a third variation of the configuration. Detailed Implementation

[0077] Hereinafter, an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0078] In most cases, the information processing device identifies whether a user accessing the device is authorized. Only if the user is authenticated as authorized will they be allowed to use the device. To date, methods such as passwords, fingerprints, and iris scans have been used to authenticate users. Recently, efforts have been made to develop authentication methods with higher security. One such method involves authentication based on three-dimensional images, such as the shape of the user's face.

[0079] Here, as an example, we will describe the case where the information processing device is a portable information processing terminal, and explain its use in authenticating users by recognizing the shape of a face captured as a three-dimensional image. Alternatively, the information processing device can be applied to other information processing devices besides portable information processing terminals, such as personal computers (PCs).

[0080] Furthermore, the structures, functions, and methods described in the following exemplary embodiments can be applied not only to the recognition of facial shapes but also to the recognition of three-dimensional shapes of objects. Objects other than faces can also be used as the measured objects for shape recognition. Moreover, the distance to the measured object is not limited.

[0081] (Information Processing Device 1)

[0082] Figure 1 This diagram illustrates an example of an information processing apparatus 1 applying this exemplary embodiment. As described above, as an example, the information processing apparatus 1 is a portable information processing terminal.

[0083] The information processing device 1 includes a user interface unit (hereinafter referred to as UI unit) 2 and an optical device 3 for acquiring three-dimensional images. The UI unit 2 is, for example, an integrated display device for displaying information to the user and an input device for inputting instructions for information processing through user operation. The display device is, for example, a liquid crystal display or an organic EL display, and the input device is, for example, a touch panel.

[0084] The optical device 3 includes a light-emitting device 4 and a three-dimensional sensor (hereinafter referred to as the 3D sensor) 6. The light-emitting device 4 illuminates the object to be measured (in this example, a face) to obtain a three-dimensional image. The 3D sensor 6 acquires the light emitted by the light-emitting device 4 and reflected back by the face. Here, a three-dimensional image of the face is acquired based on the so-called Time of Flight (TOF) method. Hereinafter, even when the object to be measured is a face, it will be referred to as the object to be measured.

[0085] Furthermore, the information processing device 1 is configured as a computer including a CPU (Central Processing Unit), ROM (Read-Only Memory), RAM (Random Access Memory), etc. The ROM includes non-volatile, rewritable memory, such as flash memory. Moreover, the programs and constants stored in the ROM are expanded in the RAM and executed by the CPU, thereby enabling the information processing device 1 to operate and perform various information processing tasks.

[0086] Figure 2 This is a block diagram illustrating the structure of the information processing device 1.

[0087] The information processing device 1 includes the aforementioned optical device 3, optical device control unit 8, and system control unit 9. As described above, the optical device 3 includes a light-emitting device 4 and a 3D sensor 6. The optical device control unit 8 controls the optical device 3. The optical device control unit 8 includes a shape-determining unit 81. The system control unit 9 controls the information processing device 1 as a system. The system control unit 9 includes an authentication processing unit 91. A UI unit 2, a speaker 92, a two-dimensional (2D) camera 93, etc., are connected to the system control unit 9. Furthermore, the 3D sensor 6 is an example of a second light-receiving unit, and the optical device control unit 8 is an example of a control unit.

[0088] The following will explain in sequence.

[0089] As described above, the optical device 3 includes a light-emitting device 4 and a 3D sensor 6. The light-emitting device 4 includes a proximity detection chip 10, a 3D shape measurement chip 20, a diffuser plate 30, and a light-receiving element for monitoring light intensity (in...). Figure 2 Sometimes referred to as PD)40, first driving unit 50A, and second driving unit 50B. In addition, proximity detection chip 10 is an example of a first light-emitting element chip, 3D shape measurement chip 20 is an example of a second light-emitting element chip, diffuser plate 30 is an example of a light diffusion component, and light-receiving element 40 for light quantity monitoring is an example of a first light-receiving unit.

[0090] The first driving unit 50A in the light-emitting device 4 drives the proximity detection chip 10, and the second driving unit 50B drives the 3D shape measuring chip 20. For example, the proximity detection chip 10 and the 3D shape measuring chip 20 are driven to emit pulsed light (hereinafter referred to as emitted light pulse) at a frequency of tens to hundreds of MHz.

[0091] As described below, the optical device 3 is configured such that the 3D sensor 6 receives light irradiated from the proximity detection chip 10 and the 3D shape measurement chip 20 toward the object to be measured and reflected by the object to be measured.

[0092] The 3D sensor 6 has multiple light-receiving areas 61 (see below) Figure 10 The 3D sensor 6 outputs a signal corresponding to the time from when light is emitted from the proximity detection chip 10 until the light is reflected by the object being measured and received by the 3D sensor 6, and a signal corresponding to the time from when light is emitted from the 3D shape measurement chip 20 until the light is reflected by the object being measured and received by the 3D sensor 6. Additionally, the 3D sensor 6 may also include a lens for focusing light.

[0093] The light emitted from the proximity detection chip 10 and reflected by the object being measured is an example of the first reflected light, and the light emitted from the 3D shape measurement chip 20 and reflected by the object being measured is an example of the second reflected light.

[0094] The shape determination unit 81 of the optical device control unit 8 acquires the digital value obtained in each light-receiving area 61 from the 3D sensor 6, and calculates the distance from each light-receiving area 61 to the object being measured, so as to determine the 3D shape of the object being measured.

[0095] When the shape determination unit 81 determines that the 3D shape of the object being measured is a 3D shape pre-stored in a ROM or similar memory, the authentication processing unit 91 of the system control unit 9 performs authentication processing related to the use of the information processing device 1. Furthermore, as an example, authentication processing related to the use of the information processing device 1 refers to processing to determine whether the use of this device, i.e., the information processing device 1, is permitted. For example, if the 3D shape of the object being measured, i.e., the face, matches the face shape stored in a storage component such as a ROM, the use of the information processing device 1, including various applications provided by the information processing device 1, is permitted.

[0096] As an example, the shape determination unit 81 and the authentication processing unit 91 described above are configured with a program. Alternatively, the shape determination unit 81 and the authentication processing unit 91 can also be configured with integrated circuits such as ASICs (Application Specific Integrated Circuits) and FPGAs (Field-Programmable Gate Arrays). The shape determination unit 81 and the authentication processing unit 91 can also be configured with software such as a program and integrated circuits.

[0097] exist Figure 2 The optical device 3, optical device control unit 8, and system control unit 9 are shown separately, but the system control unit 9 may also include the optical device control unit 8. Furthermore, the optical device control unit 8 may be included within the optical device 3. Alternatively, the optical device 3, optical device control unit 8, and system control unit 9 may also be integrally formed.

[0098] (Overall structure of optical device 3)

[0099] Next, the optical device 3 will be described in detail.

[0100] Figure 3 This is an example of a top view and a cross-sectional view of the optical device 3 applying this exemplary embodiment. Figure 3 In the diagram, (a) is a top view, and (b) is a sectional view along line IIIB-IIIB of (a). Here, in Figure 3 In (a), the horizontal direction of the paper is defined as the x-direction, and the upward direction of the paper is defined as the y-direction. The direction that is counterclockwise or orthogonal to both the x- and y-directions is defined as the z-direction.

[0101] like Figure 3 As shown in (a), in the optical device 3, a light-emitting device 4 and a 3D sensor 6 are arranged in the x-direction on a circuit board 7. The circuit board 7 uses a plate-shaped component made of an insulating material as a substrate and has a conductor pattern made of a conductive material. The insulating material is, for example, made of ceramic, epoxy resin, etc. The conductor pattern made of conductive material is provided on the circuit board 7. Alternatively, the conductive material may be, for example, a metal such as copper (Cu), silver (Ag), or a conductive paste containing these metals. The circuit board 7 can be a single-layer substrate with conductor patterns on its surface, or a multilayer substrate with multiple conductor patterns. Furthermore, the light-emitting device 4 and the 3D sensor 6 can be disposed on different circuit boards.

[0102] In the light-emitting device 4, as an example, the light-receiving element 40 for light quantity monitoring, the chip 20 for 3D shape measurement, the chip 10 for proximity detection, the first driving unit 50A, and the second driving unit 50B are arranged sequentially in the +x direction on the circuit board 7.

[0103] The proximity detection chip 10 and the 3D shape measurement chip 20, when viewed from above, are respectively quadrilateral in planar shape, and both face in the same direction. Figure 3 The light is emitted in the z-direction of (b). Furthermore, the planar shapes of both the proximity detection chip 10 and the 3D shape measurement chip 20 may not be quadrilaterals. The proximity detection chip 10 and the 3D shape measurement chip 20 can be directly mounted on the circuit board 7, or they can be mounted on the circuit board 7 via a heat dissipation substrate such as aluminum oxide or aluminum nitride. The following will describe the case where the proximity detection chip 10 and the 3D shape measurement chip 20 are directly mounted on the circuit board 7. Hereinafter, top view refers to... Figure 3 (a) is viewed from the z-direction.

[0104] A first driving section 50A for driving proximity detection chip 10 and a second driving section 50B for driving 3D shape measuring chip 20 are arranged laterally along the y-direction on circuit board 7. The rated output of the first driving section 50A is set to be smaller than the rated output of the second driving section 50B. Therefore, the overall size of the first driving section 50A is smaller than that of the second driving section 50B. The second driving section 50B needs to drive the 3D shape measuring chip 20 with a large current. Therefore, the second driving section 50B is preferentially arranged before the first driving section 50A, so that the distance from the second driving section 50B to the 3D shape measuring chip 20 is shortened. That is, the second driving section 50B is configured such that the wiring connecting to the 3D shape measuring chip 20 has a wider pattern width. On the other hand, the first driving section 50A is arranged at a position laterally offset from the second driving section 50B, that is, on the y-direction side of the second driving section 50B.

[0105] The proximity detection chip 10 is disposed on the circuit board 7 between the 3D shape measuring chip 20 and the second driving unit 50B. The light-receiving element 40 for light intensity monitoring is disposed on the circuit board 7 at a position close to the 3D shape measuring chip 20, that is, on the side opposite to the position of the second driving unit 50B relative to the 3D shape measuring chip 20. In this way, by arranging the proximity detection chip 10, the 3D shape measuring chip 20, and the light-receiving element 40 close together, it is easy to cover these components with a common diffuser plate 30. Conversely, when the proximity detection chip 10 and the 3D shape measuring chip 20 are arranged at a distance, a larger diffuser plate 30 is required when covering them with a common diffuser plate 30.

[0106] like Figure 3 As shown in (a), as an example, the planar shape of the diffuser plate 30 is rectangular. However, the planar shape of the diffuser plate 30 may not be rectangular. For example... Figure 3As shown in (b), the diffuser plate 30 is disposed at a predetermined distance from the proximity detection chip 10 and the 3D shape measurement chip 20. Furthermore, the diffuser plate 30 is supported by a sidewall 33 on the light emission direction side of the proximity detection chip 10 and the 3D shape measurement chip 20. The diffuser plate 30 is configured to cover the light-receiving element 40 for light intensity monitoring, the proximity detection chip 10, and the 3D shape measurement chip 20. Additionally, the sidewall 33 is configured to surround the light-receiving element 40 for light intensity monitoring, the proximity detection chip 10, and the 3D shape measurement chip 20. When the sidewall 33 is composed of components that absorb the light emitted from the proximity detection chip 10 and the 3D shape measurement chip 20, the light emitted from the proximity detection chip 10 and the 3D shape measurement chip 20 can be suppressed from radiating outwards through the sidewall 33. Furthermore, by sealing the proximity detection chip 10 and the 3D shape measurement chip 20 by the diffuser plate 30 and the sidewall 33, dust and moisture prevention can be achieved. In this exemplary embodiment, by arranging the proximity detection chip 10, the 3D shape measurement chip 20, and the light-receiving element 40 close together, it is easy to use a smaller sidewall 33 to surround them. Conversely, when the proximity detection chip 10 and the 3D shape measurement chip 20 are arranged apart, a larger sidewall 33 is required when using a common sidewall 33 to surround them. In the case of a structure that prepares two smaller sidewalls 33 and surrounds the proximity detection chip 10 and the 3D shape measurement chip 20 respectively, the number of components doubles. Since no sidewall 33 is provided between the proximity detection chip 10 and the 3D shape measurement chip 20, the light-emitting device 4 can be miniaturized compared to a structure in which the sidewall 33 is placed in the middle.

[0107] The light-receiving element 40 for light quantity monitoring is, for example, a photodiode (PD) made of silicon or the like that outputs an electrical signal corresponding to the amount of light received.

[0108] The light-receiving element 40 for light quantity monitoring receives light emitted from the 3D shape measurement chip 20 and reflected by the back surface of the diffuser plate 30, i.e., the -z direction side. The light-receiving element 40 for light quantity monitoring can also receive light emitted from the proximity detection chip 10 and reflected by the back surface of the diffuser plate 30.

[0109] The 3D shape measurement chip 20 is controlled by the optical device control unit 8 via the second drive unit 50B based on the amount of light received by the light receiving element 40 for light quantity monitoring, so as to maintain a predetermined light output.

[0110] In cases where the light received by the light-receiving element 40 for light intensity monitoring decreases drastically, the light emitted from the 3D shape measuring chip 20 may directly illuminate the outside due to the detachment or damage of the diffuser plate 30. In such situations, the light output of the 3D shape measuring chip 20 is suppressed by the second drive unit 50B via the optical device control unit 8. For example, the illumination from the 3D shape measuring chip 20 is stopped.

[0111] In the light-emitting device 4, the proximity detection chip 10 is driven by the first driving unit 50A, thereby emitting light for detecting the proximity of the object being measured. The 3D shape measuring chip 20 is driven by the second driving unit 50B, thereby emitting light for measuring the 3D shape of the object being measured. The light intensity monitoring light-receiving element 40 receives the light reflected by the diffuser plate 30 from the light emitted by the 3D shape measuring chip 20 and monitors the light output of the 3D shape measuring chip 20. Then, based on the light output of the 3D shape measuring chip 20 monitored by the light intensity monitoring light-receiving element 40, the light output of the 3D shape measuring chip 20 is controlled via the second driving unit 50B. Alternatively, the light intensity monitoring light-receiving element 40 can also monitor the light output of the proximity detection chip 10 in the same way as the 3D shape measuring chip 20.

[0112] (Structure of proximity detection chip 10 and 3D shape determination chip 20)

[0113] Figure 4 This diagram illustrates the structure of the proximity detection chip 10 and the 3D shape measurement chip 20. The proximity detection chip 10 is configured to include a vertical-cavity surface-emitting laser (VCSEL) element-A. On the other hand, the 3D shape measurement chip 20 is configured to include a vertical-cavity surface-emitting laser element-B. Hereinafter, the vertical-cavity surface-emitting laser element-A will be referred to as VCSEL-A, and the vertical-cavity surface-emitting laser element-B will be referred to as VCSEL-B. Alternatively, when VCSEL-A and VCSEL-B are not distinguished, they will be referred to simply as VCSEL. VCSEL-A is an example of a first light-emitting element, and VCSEL-B is an example of a second light-emitting element.

[0114] A VCSEL is a light-emitting element that emits laser light in a direction perpendicular to the substrate by having an active region, which is disposed between a lower multilayer film reflector and an upper multilayer film reflector stacked on a substrate. Therefore, VCSELs can be easily arrayed in a two-dimensional arrangement. Here, the proximity detection chip 10 includes one or more VCSEL-A, and the 3D shape measurement chip 20 includes multiple VCSEL-B.

[0115] The proximity detection chip 10 emits light from its VCSEL-A to detect whether the object being measured is approaching the information processing device 1. The 3D shape measurement chip 20 emits light from its VCSEL-B to measure the 3D shape of the object being measured. In the case of facial recognition, the measurement distance is approximately 10 cm to 1 m. The area used to measure the 3D shape of the object being measured (hereinafter referred to as the measurement range or illumination range, and this range is referred to as the illumination surface) is approximately 1 m square.

[0116] In this case, the proximity detection chip 10 contains 1 to 50 VCSEL-A units. The 3D shape measurement chip 20 contains 100 to 1000 VCSEL-B units. That is, the number of VCSEL-B units in the 3D shape measurement chip 20 is greater than the number of VCSEL-A units in the proximity detection chip 10. As described later, the multiple VCSEL-A units of the proximity detection chip 10 are connected in parallel and driven in parallel. Similarly, the multiple VCSEL-B units of the 3D shape measurement chip 20 are connected in parallel and driven in parallel. Furthermore, the number of VCSELs described above is just an example, and can be set according to the measurement distance and measurement range. As an example, Figure 4 The proximity detection chip 10 shown is configured to include 4 VCSEL-A.

[0117] The proximity detection chip 10 does not need to illuminate the entire surface of the measurement range; it only needs to detect whether the object being measured is close to the measurement range. Therefore, the proximity detection chip 10 only needs to illuminate a portion of the measurement range. Consequently, the number of VCSEL-A cells in the proximity detection chip 10 can be relatively small. To detect whether the object being measured is close to the information processing device 1, the proximity detection chip 10 illuminates the measurement range at predetermined intervals when there is a request to use the information processing device 1. Therefore, the proximity detection chip 10 is required to have low power consumption.

[0118] On the other hand, when the 3D shape measuring chip 20 detects that the object to be measured is approaching the measuring range, it illuminates the entire surface of the measuring range with light. The 3D shape is determined based on the reflected light received by the 3D sensor 6 from the measuring range. Therefore, a large amount of emitted light from the VCSEL-B of the 3D shape measuring chip 20 is required. To uniformly illuminate the entire surface of the measuring range, the 3D shape measuring chip 20 includes multiple VCSEL-Bs. Furthermore, since the 3D shape measuring chip 20 only emits light when measuring the 3D shape, higher power consumption is acceptable.

[0119] (VCSEL-A of proximity detection chip 10)

[0120] Next, the VCSEL-A of the proximity detection chip 10 will be explained.

[0121] The proximity detection chip 10 illuminates light to detect whether an object is approaching. Therefore, the VCSEL-A of the proximity detection chip 10 does not need to illuminate the entire surface of the measurement range, but requires a small divergence angle of the emitted light to minimize the decrease in optical density relative to distance. Compared to a case where the emitted light has a small divergence angle at the same light output, a larger divergence angle results in a decrease in the optical density illuminating the object. Consequently, the reflected light received by the 3D sensor 6 weakens, making the detection of reflected light more difficult.

[0122] In addition, optical density refers to illuminance.

[0123] Here, as an example, the VCSEL-A of the proximity detection chip 10 uses a single-mode VCSEL that oscillates in a single transverse mode. Compared to a multimode VCSEL that oscillates in multiple transverse modes, the single-mode VCSEL has a smaller divergence angle of emitted light. Therefore, even with the same light output, the optical density of the single-mode VCSEL on the illumination surface is greater than that of the multimode VCSEL. Furthermore, the divergence angle of emitted light refers to the full width at half maximum (FWHM) of the light emitted from the VCSEL (see reference). Figure 8 (θ1 and θ2 in (b)). In addition, here, a single transverse mode refers to the characteristic that the intensity distribution of the emitted light with the divergence angle as a parameter has a single peak, that is, the intensity peak is one. For example, multiple transverse modes can be included within the range of maintaining the single peak.

[0124] The VCSEL-A of the proximity detection chip 10 can also be constructed using a VCSEL with a long resonant cavity structure as a single-mode VCSEL.

[0125] VCSELs with long resonant cavities introduce spacer layers of several to tens of λ wavelengths between the active region and one side of a multilayer mirror within a typical λ-cavity VCSEL with a resonant cavity length equal to the oscillation wavelength λ. This increases the cavity length and consequently increases the loss of higher-order transverse modes. Therefore, VCSELs with long resonant cavities can perform single-mode oscillations with an oxide aperture larger than those of VCSELs with typical λ-cavity structures. In VCSELs with typical λ-cavity structures, stable operation in a single longitudinal mode is achieved due to the larger longitudinal mode spacing (sometimes referred to as the "free spectral range"). In contrast, in VCSELs with long resonant cavities, the increased cavity length leads to a narrower longitudinal mode spacing, and the presence of multiple longitudinal modes (standing waves) within the cavity, resulting in easier switching between longitudinal modes. Therefore, in VCSELs with long resonant cavities, it is necessary to suppress longitudinal mode switching.

[0126] Compared to single-mode VCSELs with a typical λ-cavity structure, VCSELs with a long resonant cavity structure are more likely to have a narrower divergence angle.

[0127] Figure 5 This is a diagram illustrating the cross-sectional structure of a VCSEL-A in the proximity detection chip 10. The VCSEL-A is a VCSEL with a long resonant cavity structure.

[0128] VCSEL-A is constructed by stacking the following components on an n-type GaAs substrate 100: an n-type lower distributed Bragg reflector (DBR) 102, which is alternately stacked with AlGaAs layers of different Al compositions; a resonant cavity extension region 104, which is formed on the lower DBR 102 and extends the resonant cavity length; an n-type carrier blocking layer 105, which is formed on the resonant cavity extension region 104; an active region 106, which is formed on the carrier blocking layer 105 and includes a quantum well layer sandwiched between the upper spacer layer and the lower spacer layer; and a p-type upper DBR 108, which is formed on the active region 106 and is alternately stacked with AlGaAs layers of different Al compositions.

[0129] The lower part of the n-type DBR102 is Al 0.9 Ga 0.1 A multilayer stack consisting of paired As and GaAs layers, with each layer having a thickness of λ / 4n. r (where λ is the oscillation wavelength, n) r (This refers to the refractive index of the medium), and these layers are stacked alternately for 40 cycles. The carrier concentration after doping silicon as an n-type impurity is, for example, 3 × 10⁻⁶. 18 cm -3 .

[0130] The resonant cavity extension region 104 is a single layer formed through a series of epitaxial growths. The resonant cavity extension region 104 is composed of AlGaAs, GaAs, or AlAs, such that its lattice constant is consistent with or matches that of the GaAs substrate. To emit laser light in the 940 nm band, the resonant cavity extension region 104 is composed of AlGaAs, which does not produce light absorption. The film thickness of the resonant cavity extension region 104 is set to approximately 2 μm to 5 μm, and the oscillation wavelength λ is between 5λ and 20λ. Therefore, the carrier migration distance is lengthened. Thus, the resonant cavity extension region 104 is ideally an n-type region with high carrier mobility and is therefore inserted between the lower n-type DBR 102 and the active region 106. Such a resonant cavity extension region 104 is sometimes referred to as a cavity extension region or a cavity space.

[0131] Preferably, a material, for example made of Al, is formed between the resonant cavity extension region 104 and the active region 106. 0.9 Ga 0.1 A carrier blocking layer 105 with a large band gap is fabricated as As. By inserting the carrier blocking layer 105, carrier leakage from the active region 106 can be prevented, thus improving luminous efficiency. As described later, a layer 120 is inserted in the resonant cavity extension region 104 to impart optical losses that slightly reduce the oscillation intensity of the laser; therefore, the carrier blocking layer 105 serves to compensate for such losses. For example, the film thickness of the carrier blocking layer 105 is λ / 4 nm. r (where λ is the oscillation wavelength, m is an integer, and n is a constant.) r (where is the refractive index of the medium).

[0132] The active region 106 is formed by stacking a lower spacer layer, a quantum well active layer, and an upper spacer layer. For example, the lower spacer layer is undoped Al. 0.6 Ga 0.4 The As layer consists of an undoped InGaAs quantum well layer and an undoped GaAs barrier layer, while the upper spacer layer is undoped Al. 0.6 Ga 0.4 As layer.

[0133] The upper part of the p-type DBR108 is a p-type Al. 0.9 Ga 0.1 A stack of As and GaAs layers, each layer having a thickness of λ / 4n. r These layers are stacked alternately for 29 cycles. The carrier concentration after doping with carbon as a p-type impurity is, for example, 3 × 10⁻⁶. 18 cm -3 Preferably, a contact layer made of p-type GaAs is formed on the uppermost layer of the upper DBR108, and a current-restricting layer 110 of p-type AlAs is formed on the lowermost layer of the upper DBR108 or inside thereof.

[0134] By etching the semiconductor layers stacked from the upper DBR108 to the lower DBR102, a cylindrical mesa M1 is formed on the substrate 100, and a current-restricting layer 110 is exposed on the side of the mesa M1. In the current-restricting layer 110, an oxide region 110A, selectively oxidized from the side of the mesa M1, and a conductive region 110B surrounded by the oxide region 110A are formed. The conductive region 110B is an oxide via. During the oxidation process, the AlAs layer oxidizes faster than the AlGaAs layer. The oxide region 110A is oxidized from the side of the mesa M1 towards the interior at a substantially constant rate. Therefore, the planar shape of the conductive region 110B, parallel to the substrate, reflects the shape of the mesa M1, i.e., a circular shape, with its center approximately aligned with the axial direction indicated by the dotted line of the mesa M1. In VCSEL-A with a long resonant cavity structure, the diameter of the conductive region 110B used to obtain a single transverse mode is larger than that of VCSEL with a typical λ resonant cavity structure. For example, the diameter of the conductive region 110B can be increased to about 7 μm or more and about 8 μm or less.

[0135] A ring-shaped p-side electrode 112 made of stacked metal such as Ti / Au is formed on the uppermost layer of the mesa M1. The p-side electrode 112 is in ohmic contact with the contact layer of the upper DBR 108. The inner side of the ring-shaped p-side electrode 112 becomes a light emission outlet 112A for emitting laser light to the outside. That is, the axial direction of the mesa M1 becomes the optical axis. Furthermore, a cathode electrode 114 is formed on the back side of the substrate 100 as an n-side electrode. In addition, the surface of the upper DBR 108, which includes the light emission outlet 112A, is the emission surface.

[0136] Furthermore, an insulating layer 116 is provided on the surface of the mesa M1, covering only the connection portion between the p-side electrode 112 and the anode electrode 118 (described later) and the light emission outlet 112A. Also, except for the light emission outlet 112A, the anode electrode 118 is provided in ohmic contact with the p-side electrode 112. Additionally, the anode electrode 118 is provided at locations other than the light emission outlets 112A of each of the plurality of VCSEL-A. That is, each p-side electrode 112 of the plurality of VCSEL-A included in the proximity detection chip 10 is connected in parallel via the anode electrode 118.

[0137] In VCSELs with long resonant cavity structures, since multiple longitudinal modes may exist within the reflection band defined by the resonant cavity length, it is necessary to suppress switching or abrupt transitions between longitudinal modes. Here, in order to set the oscillation band of the desired longitudinal mode to 940 nm and suppress switching to oscillation bands of other longitudinal modes, a layer 120 is provided within the resonant cavity extension region 104 to impart optical loss to the standing wave of the unwanted longitudinal mode. That is, the optical loss imparting layer 120 is introduced to the position of the node of the standing wave of the desired longitudinal mode. The optical loss imparting layer 120 is made of a semiconductor material with the same Al composition as the semiconductor layer constituting the resonant cavity extension region 104, for example, Al... 0.3 Ga 0.7 The optical loss imparting layer 120 preferably has a higher impurity doping concentration than the semiconductor layer constituting the resonant cavity extension region 104. For example, the impurity concentration of AlGaAs constituting the resonant cavity extension region 104 is 1 × 10⁻⁶. 17 cm -3 At that time, the optical loss imparting layer 120 has 1×10 18 cm -3 The impurity concentration is configured to be about an order of magnitude higher than that of other semiconductor layers. When the impurity concentration increases, the light absorption caused by charge carriers increases, resulting in losses. The thickness of layer 120 is selected to impart optical losses such that the loss of the desired longitudinal mode does not increase, preferably a thickness similar to that of the current-narrowing layer 110 located at the nodes of the standing wave (about 10 nm to 30 nm).

[0138] An optical loss-imposing layer 120 is inserted so that it is located at a node relative to the desired longitudinal mode of the standing wave. Since the nodes of the standing wave are relatively weak, the optical loss-imposing layer 120 has a smaller effect on the loss imparted by the desired longitudinal mode. On the other hand, for the standing wave of the unwanted longitudinal mode, the optical loss-imposing layer 120 is located at an antinode outside the node. Since the antinodes of the standing wave are stronger than the nodes, the optical loss-imposing layer 120 imparts a larger loss to the unwanted longitudinal mode. Thus, by reducing the loss for the desired longitudinal mode and increasing the loss for the unwanted longitudinal mode, it is possible to selectively prevent the unwanted longitudinal mode from resonating and suppress longitudinal mode jumps.

[0139] The optical loss imparting layer 120 does not necessarily need to be positioned at each node of the standing wave of the required longitudinal mode in the extended region 104 of the resonant cavity; it can also be a single layer. In this case, the intensity of the standing wave is greater closer to the active region 106, so the optical loss imparting layer 120 only needs to be formed at the node position close to the active region 106. Furthermore, if switching or jumping between longitudinal modes is allowed, the optical loss imparting layer 120 may not be provided.

[0140] (VCSEL-B for 3D shape measurement chip 20)

[0141] Next, the VCSEL-B of the 3D shape measurement chip 20 will be described.

[0142] Here, the 3D shape measurement chip 20 illuminates light to determine the 3D shape of the object being measured. Therefore, a predetermined measurement range is illuminated with a predetermined light density. Therefore, the VCSEL-B of the 3D shape measurement chip 20 is preferably composed of a multimode VCSEL, which is easier to achieve higher output than a single-mode VCSEL.

[0143] Figure 6 This is a cross-sectional view illustrating the structure of a VCSEL-B in the 3D shape measurement chip 20. This VCSEL-B is the VCSEL with the general λ-cavity structure described above. That is, VCSEL-B does not possess the cavity extension region 104 found in the VCSEL-A described above.

[0144] VCSEL-B is constructed by stacking the following components on an n-type GaAs substrate 200: an n-type lower DBR 202, which is alternately stacked with AlGaAs layers of different Al compositions; an active region 206 formed on the lower DBR 202, including a quantum well layer sandwiched between an upper spacer layer and a lower spacer layer; and a p-type upper DBR 208 formed on the active region 206, which is alternately stacked with AlGaAs layers of different Al compositions. Additionally, a p-type AlAs current-limiting layer 210 is formed on or within the bottom layer of the upper DBR 208.

[0145] Since the lower DBR202, active region 206, upper DBR208, and current narrowing layer 210 are the same as the lower DBR102, active region 106, upper DBR108, and current narrowing layer 110 of the VCSEL-A described above, the description is omitted.

[0146] By etching the semiconductor layers stacked from the upper DBR208 to the lower DBR202, a cylindrical mesa M2 is formed on the substrate 200, and a current-restricting layer 210 is exposed on the side of the mesa M2. Within the current-restricting layer 210, an oxide region 210A, selectively oxidized from the side of the mesa M2, and a conductive region 210B surrounded by the oxide region 210A are formed. The conductive region 210B is an oxide via. The planar shape of the conductive region 210B, parallel to the substrate, reflects the shape of the mesa M2, i.e., it is circular, and its center is approximately aligned with the central axis direction indicated by the dotted line of the mesa M2.

[0147] A ring-shaped p-side electrode 212, made of stacked metal such as Ti / Au, is formed on the uppermost layer of the mesa M2. The p-side electrode 212 makes ohmic contact with the contact layer of the upper DBR 208. A circular light emission exit 212A, with its center aligned with the axial direction of the mesa M2, is formed on the p-side electrode 212, and laser light is emitted outward from the light emission exit 212A. That is, the axial direction of the mesa M2 becomes the optical axis. Furthermore, a cathode electrode 214 is formed as an n-side electrode on the back side of the substrate 200. The surface of the upper DBR 208, including the light emission exit 212A, is the emission surface.

[0148] An insulating layer 216 is provided on the surface of the mesa M2, covering the portion where the p-side electrode 212 connects to the anode electrode 218 (described later) and the light emission exit 212A. The anode electrode 218 is provided in ohmic contact with the p-side electrode 212, except for the light emission exit 212A. The anode electrode 218 is provided at locations other than the light emission exits 212A of each of the plurality of VCSEL-Bs. That is, each p-side electrode 212 of the plurality of VCSEL-Bs constituting the 3D shape measurement chip 20 is connected in parallel via the anode electrode 218.

[0149] Figure 7 This is a graph illustrating the relationship between the optical output and power conversion efficiency of a typical VCSEL.

[0150] Generally, VCSELs achieve maximum power conversion efficiency when the light output is between 4mW and 8mW. However, within this range of maximum power conversion efficiency, the divergence angle increases compared to when used in a range with lower light output. Consequently, the increase in optical density on the irradiated surface is not proportional to the increase in light output.

[0151] Here, it is preferable to drive the VCSEL-A of the proximity detection chip 10 within the range of light output that reduces power conversion efficiency. That is, by intentionally emitting light at a light output below the range that maximizes power conversion efficiency, the VCSEL-A emits light with a narrower divergence angle. Furthermore, in cases where the light density on the irradiated surface is insufficient, a narrower divergence angle can be maintained while increasing the light density by increasing the number of VCSEL-A without increasing the light output of each VCSEL-A. As an example, the light output of one VCSEL-A is set to 1mW or more and 4mW or less. The number of VCSEL-A in the proximity detection chip 10 is, for example, 1 or more and 50 or less, as described above. Additionally, in Figure 4 In the structure shown, as described above, in order to avoid the range that maximizes power conversion efficiency (4mW to 8mW) and at the same time increase optical density, the proximity detection chip 10 is configured to include multiple VCSEL-A.

[0152] On the other hand, it is preferable to drive the VCSEL-B of the 3D shape measurement chip 20 to have a range of light output that maximizes power conversion efficiency. As an example, the light output of one VCSEL-B is set to 4mW or more and 8mW or less. The number of VCSEL-Bs in the 3D shape measurement chip 20 is, for example, 100 or more and 1000 or less, as described above.

[0153] (Structure of diffuser plate 30)

[0154] Next, the diffuser plate 30 will be described.

[0155] Figure 8 This is a diagram illustrating an example of the structure of the diffuser plate 30. Figure 8 In the diagram, (a) is a top view and (b) is a sectional view along line VIIIB-VIIIB of (a).

[0156] like Figure 3 As shown in (a) and (b), the diffuser plate 30 is disposed on the side where the light emitted by the proximity detection chip 10 and the 3D shape measurement chip 20 is emitted, thereby diffusing the light emitted by the proximity detection chip 10 and the 3D shape measurement chip 20 respectively. That is, the diffuser plate 30 has the function of further expanding the divergence angle of the light incident on the diffuser plate 30.

[0157] like Figure 8 As shown in (a), the diffuser plate 30 includes a first region 30A and a second region 30B. In other words, the diffuser plate 30 is configured as a component in which the first region 30A and the second region 30B are integrated. The first region 30A is disposed in the light emission path from the VCSEL-A of the proximity detection chip 10, and the second region 30B is disposed in the light emission path from the 3D shape measurement chip 20. That is, as Figure 3As shown in (a), when viewing the light-emitting device 4 from its surface (top view), the first region 30A of the diffuser plate 30 is positioned opposite to the location where the proximity detection chip 10 is disposed, and the second region 30B of the diffuser plate 30 is positioned opposite to the 3D shape measuring chip 20. When a common diffuser plate 30 is used to cover both the proximity detection chip 10 and the 3D shape measuring chip 20, proximity detection becomes difficult when light from the proximity detection chip 10 is also diffused by the diffuser plate 30. Therefore, to use a common diffuser plate 30, as described above, the diffuser plate 30 includes a first region 30A and a second region 30B. Furthermore, in this exemplary embodiment, the proximity detection chip 10 and the 3D shape measuring chip 20 are disposed close together. This is because if the distance between the proximity detection chip 10 and the 3D shape measuring chip 20 is too great, a large diffuser plate would be required if a common (integrated) diffuser plate 30 is used. In summary, in this exemplary embodiment, a small diffuser plate 30 is used where the first region 30A and the second region 30B are integrated.

[0158] Compared to the first region 30A, the diffusion angle of the second region 30B of the diffuser plate 30 is set to be larger. For example, as Figure 8 As shown in (b), the diffuser plate 30 has a resin layer 32 with irregularities formed on one surface of a flat glass substrate 31 with two parallel surfaces, for diffusing light. The first region 30A and the second region 30B are configured to have different irregularities, and the second region 30B has a larger diffusion angle. In addition, the diffusion angle refers to the divergence angle of light transmitted through the diffuser plate 30.

[0159] Here, the first region 30A is configured without any irregularities, so light does not diffuse. For example, the resin layer 32 of the diffuser plate 30 has irregularities in the second region 30B, but is flat in the first region 30A. Furthermore, for example, in the first region 30A of the diffuser plate 30, the surface of the glass substrate 31, which is parallel and flat, is exposed. Here, the first region 30A does not need to be completely flat; it can have an irregular shape, as long as it is within a range where the diffusion angle is smaller compared to the second region 30B. The first region 30A of the diffuser plate 30 can also be a through-hole through which light passes. If the first region 30A of the diffuser plate 30 is a through-hole, then, similar to the case where the first region 30A is flat, light does not diffuse.

[0160] like Figure 8As shown in (b), the VCSEL-A of the proximity detection chip 10 is positioned opposite to the first region 30A of the diffuser plate 30. On the other hand, the VCSEL-B of the 3D shape measurement chip 20 is positioned opposite to the second region 30B of the diffuser plate 30. The divergence angle of the emitted light from VCSEL-A is set to θ1, and the divergence angle of the emitted light from VCSEL-B is set to θ2. Furthermore, θ1 is smaller than θ2 (i.e., θ1 < θ2).

[0161] When light emitted from VCSEL-A passes through the first region 30A without any unevenness, the light does not diffuse and passes directly through with the divergence angle θ1 of the emitted light as the diffusion angle α.

[0162] On the other hand, when light emitted from VCSEL-B passes through the second region 30B which is provided with unevenness, the light diffuses and is emitted from the diffuser plate 30 at a diffusion angle β that is larger than the divergence angle θ2 of the emitted light.

[0163] In addition, the divergence angles θ1 and θ2 and the diffusion angles α and β are the full width at half maximum (FWHM).

[0164] As explained above, the diffuser plate 30 is configured such that the diffusion angle of the first region 30A is smaller than that of the second region 30B. Therefore, the light emitted from the VCSEL-B of the 3D shape measurement chip 20 is further diffused in the second region 30B before being emitted outwards. Thus, compared to the case where the emitted light from the VCSEL-B is emitted outwards without diffusion in the second region 30B, a more uniform illumination pattern can be obtained over a wider illumination area. Furthermore, the second region 30B can also be configured to have the same diffusion angle throughout the entire second region 30B, or it can be configured to have a different diffusion angle depending on its position within the second region 30B. Additionally, the second region 30B can also be configured such that the optical axis of the VCSEL-B coincides with the central axis of the diffused light, or it can be configured such that the central axis of the diffused light is intentionally deviated from the optical axis of the VCSEL-B to expand the illumination area.

[0165] Alternatively, the first region 30A may also include an optical element that narrows the divergence angle θ1 of the emitted light from the VCSEL-A of the proximity detection chip 10. Such an optical element can be obtained, for example, by making the first region 30A into a convex lens shape. Here, narrowing the divergence angle includes not only focusing the incident light, but also making the incident light parallel, or narrowing the degree of diffusion even if it is diffused.

[0166] The size of the first region 30A can be determined by considering the number of VCSEL-A cells in the proximity detection chip 10, the divergence angle θ of the emitted light, and the intensity of the emitted light. As an example, in the case of facial authentication, when the proximity detection chip 10 is composed of, for example, 1 to 50 VCSEL-A cells, the lateral width and vertical width of the first region 30A can be within the range of 50 μm to 500 μm. Furthermore, in... Figure 8 In (a), the surface shape of the first region 30A when viewed from above is circular, but it can also be a square, rectangle, polygon, or a combination thereof. Furthermore, the lateral and longitudinal widths of the first region 30A, i.e., the size of the first region 30A, can be set based on the light output of the proximity detection chip 10. For example, the first region 30A can be set to be larger than the half-maximum width of the light emitted from the proximity detection chip 10 and smaller than the region with 0.1% intensity. Additionally, if it is desired to bring VCSEL-A and VCSEL-B closer together, the first region 30A can also be set to be smaller than the region with 1% intensity or smaller than the region with 5% intensity.

[0167] The size of the diffuser plate 30, which includes the first region 30A and the second region 30B, can be set, for example, to a horizontal width and a vertical width of 1 mm to 10 mm, and a thickness of 0.1 mm to 1 mm. Furthermore, the diffuser plate 30 only needs to cover the proximity detection chip 10, the 3D shape measurement chip 20, and the light-receiving element 40 for light quantity monitoring in a top-view state. Furthermore, an example of a rectangular shape for the diffuser plate 30 in a top-view state is shown, but it can also be other shapes such as polygons or circles. If the diffuser plate 30 has the size and shape described above, it can provide a light diffusion component particularly suitable for facial authentication in portable information processing terminals, measuring light at close ranges up to several meters.

[0168] (Positional relationship between diffuser plate 30, VCSEL-A of proximity detection chip 10, and VCSEL-B of 3D shape determination chip 20)

[0169] Reference Figure 8 (b) describes the positional relationship between the VCSEL-A of the proximity detection chip 10 and the VCSEL-B of the 3D shape measurement chip 20. Here, the arrangement interval between the adjacent VCSEL-A of the proximity detection chip 10 and the VCSEL-B of the 3D shape measurement chip 20 is set as p1, the interval between the VCSEL-A of the proximity detection chip 10 is set as p2, and the interval between the VCSEL-B of the 3D shape measurement chip 20 is set as p3.

[0170] At this time, from Figure 8As can be seen from (b) of [description], when VCSEL-B is too close to the proximity detection chip 10, that is, when the interval p1 becomes small, the light with a large light intensity emitted from VCSEL-B easily passes through the first region 30A of the diffusion plate 30 and is emitted to the outside without diffusion or with weak diffusion. Therefore, preferably, a sufficient distance is provided between adjacent VCSEL-A and VCSEL-B. For example, preferably, VCSEL-B of the 3D shape measurement chip 20 adjacent to the first region 30A of the diffusion plate 30 is configured such that the range of the divergence angle θ2 of the emitted light does not overlap with the first region 30A of the diffusion plate 30. Thus, compared with the case where the range of the divergence angle θ2 of the emitted light from VCSEL-B of the 3D shape measurement chip 20 overlaps with the first region 30A of the diffusion plate 30, the amount of light passing through the first region 30A of the diffusion plate 30 after being emitted from VCSEL-B of the 3D shape measurement chip 20 is reduced.

[0171] For example, preferably, the arrangement interval p1 between VCSEL-A of the proximity detection chip 10 and VCSEL-B of the 3D shape measurement chip 20 adjacent to each other is larger than the interval p3 between VCSEL-Bs of the 3D shape measurement chip 20.

[0172] In addition, the divergence angle θ1 of the emitted light from VCSEL-A of the proximity detection chip 10 is set to be smaller than the divergence angle θ2 of the emitted light from VCSEL-B of the 3D shape measurement chip 20. However, when the distance from the light exit 112A (refer to Figure 5 ) of VCSEL-A of the proximity detection chip 10 to the diffusion plate 30 is set as the distance g1, and the distance from the light exit 212A of VCSEL-B of the 3D shape measurement chip 20 to the diffusion plate 30 is set as the distance g2, if the distance g1 is made smaller than the distance g2 (i.e., g1 < g2), then as shown in Figure 8 (b) of [description], even when the first region 30A of the diffusion plate 30 is small, the emitted light from VCSEL-A of the proximity detection chip 10 easily passes through the first region 30A and irradiates the measured object. That is, it is only necessary to arrange the light exit 112A of VCSEL-A of the proximity detection chip 10 closer to the diffusion plate 30 than the light exit 212A of VCSEL-B of the 3D shape measurement chip 20.

[0173] This makes it easier to reduce the area of ​​the first region 30A of the diffuser plate 30. Furthermore, the smaller the area of ​​the first region 30A, the less light passes through it after being emitted from the VCSEL-B of the 3D shape measurement chip 20. Therefore, the VCSEL-B of the 3D shape measurement chip 20 can be positioned closer to the proximity detection chip 10. In other words, the area (dead zone) between the adjacent proximity detection chip 10's VCSEL-A and the 3D shape measurement chip 20's VCSEL-B, where VCSEL-B cannot be positioned, is reduced, and the dimensions of the diffuser plate 30 and the sidewall 33 become smaller.

[0174] The light output of VCSEL-B in the 3D shape measurement chip 20 is greater than that of VCSEL-A in the proximity detection chip 10, thus the temperature is more likely to rise. Therefore, if the spacing p3 between the VCSEL-B of the 3D shape measurement chip 20 is wider than the spacing p2 between the VCSEL-A of the proximity detection chip 10 (i.e., p3>p2), the temperature rise is suppressed. On the other hand, the light output of the VCSEL-A of the proximity detection chip 10 is smaller than that of the VCSEL-B of the 3D shape measurement chip 20, thus the temperature is less likely to rise. Therefore, if the distance p2 between the VCSEL-A of the proximity detection chip 10 is smaller than the distance p3 between the VCSEL-B of the 3D shape measurement chip 20, the occupied area of ​​the proximity detection chip 10 can be easily reduced.

[0175] Furthermore, such as Figure 8 As shown in (a), the first region 30A of the diffuser plate 30 is preferably surrounded by the second region 30B. Therefore, as described later... Figure 9 Compared to (a) and (b), it is possible to suppress light emitted from the VCSEL-B of the 3D shape measurement chip 20 from passing through the first region of the diffuser plate 30.

[0176] Next, a modified example of the diffuser plate 30 will be described.

[0177] Figure 9 This is a diagram showing a modified example of the diffuser plate 30. Figure 9 In the examples, (a) is a first modified example of the diffuser plate 30, and (b) is a second modified example of the diffuser plate 30.

[0178] exist Figure 9 In the first modified example of the diffuser plate 30 shown in (a), the planar shape of the first region 30A of the diffuser plate 30 is set to a slit shape extending along the +x direction. As a result, the margin of arrangement relative to the ±x direction is widened. Even in this case, the first region is surrounded by the second region, so it is possible to suppress light emitted from the VCSEL-B of the 3D shape measurement chip 20 from passing through the first region of the diffuser plate 30.

[0179] On the other hand, Figure 9 In the second modification of the diffuser plate 30 shown in (b), the first region 30A of the diffuser plate 30 is disposed at the right end (+x direction side) of the diffuser plate 30. In this second modification, the first region is not surrounded by the second region. Therefore, in the second modification of the diffuser plate 30, compared with the first modification of the diffuser plate 30, the amount of light emitted from the VCSEL-B of the 3D shape measuring chip 20 that passes through the first region 30A of the diffuser plate 30 increases. However, in cases where the light output of the VCSEL-B of the 3D shape measuring chip 20 is low, or where the distance between the VCSEL-B of the 3D shape measuring chip 20 and the first region 30A is large when viewed from above, the second modification of the diffuser plate 30 can also be adopted under the premise that light emitted from the VCSEL-B of the 3D shape measuring chip 20 is allowed to pass through the first region 30A. In such cases, it is possible to suppress light emitted from the VCSEL-B of the 3D shape measuring chip 20 from passing through the first region of the diffuser plate 30.

[0180] Here, "the first region being surrounded by the second region" means that, in a top-down view, the second region 30B exists in at least two directions.

[0181] (Structure of 3D sensor 6)

[0182] Figure 10 This is a diagram illustrating the 3D sensor 6.

[0183] The 3D sensor 6 is configured with multiple light-receiving regions 61 arranged in a matrix (grid). The 3D sensor 6 receives reflected light (i.e., received light pulses) from the object being measured relative to the emitted light pulses from the light-emitting device 4, and stores a charge in each light-receiving region 61 corresponding to the time elapsed until the light is received. As an example, the 3D sensor 6 is configured as a CMOS device, wherein each light-receiving region 61 has two gates and corresponding charge storage units. The 3D sensor 6 is configured such that by alternately applying pulses to the two gates, the generated photoelectrons are rapidly transferred to either of the two charge storage units, and a charge corresponding to the phase difference between the emitted and received light pulses is stored. Subsequently, via an AD converter, the digital value corresponding to the charge corresponding to the phase difference between the emitted and received light pulses of each light-receiving region 61 is output as a signal. That is, the 3D sensor 6 outputs a signal corresponding to the time from when light is emitted from the proximity detection chip 10 until the light is received by the 3D sensor 6, and a signal corresponding to the time from when light is emitted from the 3D shape measurement chip 20 until the light is received by the 3D sensor 6.

[0184] (Flowchart of authentication processing in information processing device 1)

[0185] Figure 11 This is a flowchart for performing authentication processes related to the use of the information processing device 1.

[0186] Here, it is assumed that the information processing device 1 has at least a disconnected state where the power is off, a standby state where power is supplied to only a part of the information processing device 1, and an operating state where power is supplied to a larger part (e.g., the entire information processing device 1) compared to the standby state.

[0187] First, determine whether there is a request to use information processing device 1 (step 110, in Figure 11 (This is referred to as S110, and the others are similar). A situation where a usage request exists refers to a situation where the power is turned on while the device is off, or where the user operates the information processing device 1 in standby mode. An example of a usage request also includes a situation where a call or email is received in standby mode, i.e., when the system control unit 9 receives a signal to switch to an operational state.

[0188] In step 110, if the determination is negative (no), that is, if the information processing device 1 remains in the off state or standby state, step 110 is repeated.

[0189] On the other hand, in step 110, if the determination is affirmative (yes), that is, when the information processing device 1 switches to the operating state, the proximity detection chip 10 illuminates the object to be measured with light, and the 3D sensor 6 receives the reflected light from the object to be measured (step 120). Alternatively, the proximity detection chip 10 can continue to illuminate the object while the information processing device 1 is in standby mode, regardless of whether there is a usage request in step 110.

[0190] Next, it is determined whether the object being measured is approaching the information processing device 1 (step 130). "Approaching" means that the object being measured is within a predetermined distance. In step 130, if the determination is negative (no), that is, if the object being measured is not approaching the information processing device 1, the process returns to step 120.

[0191] On the other hand, in step 130, if the determination is affirmative (yes), that is, if the object being measured is approaching the information processing device 1, the 3D shape measuring chip 20 illuminates the object, and the 3D sensor 6 receives the reflected light from the object (step 140). At this time, the illumination from the proximity detection chip 10 can be stopped or continued. If the illumination from the proximity detection chip 10 continues, the illumination pattern on the irradiated surface is more likely to become more uniform compared to the case where the illumination does not continue.

[0192] Subsequently, based on the amount of light received by the 3D sensor 6, the shape determination unit 81 of the optical device control unit 8 determines the 3D shape of the object being measured (step 150).

[0193] Next, it is determined whether the 3D shape determined by the authentication processing unit 91 is a predetermined shape (step 160). In step 160, if the determination is affirmative (yes), that is, if the determined 3D shape matches a pre-stored shape, the use of the information processing device 1 is permitted (step 170). On the other hand, if the determination is negative (no), that is, if the determined 3D shape does not match a shape pre-stored in ROM or the like, the use of this device, i.e., the information processing device 1, is not permitted, and the process returns to step 120. Alternatively, the determination may consider not only the 3D shape but also other information such as the two-dimensional image acquired by the 2D camera 93 to determine whether the use of this device, i.e., the information processing device 1, is permitted.

[0194] As explained above, the information processing device 1 in this exemplary embodiment includes a proximity detection chip 10 and a 3D shape measurement chip 20. Whether a measured object is approaching the information processing device 1 is determined by irradiation from the proximity detection chip 10. If the measured object is approaching, 3D measurement light is irradiated from the 3D shape measurement chip 20. That is, even if the measured object is not approaching, the 3D shape measurement chip 20's light emission is suppressed. At this time, by making the light output of the proximity detection chip 10 smaller than the light output of the 3D shape measurement chip 20, power consumption can be suppressed. In the case where the information processing device 1 is a portable information processing terminal, the reduction in battery charge can be suppressed.

[0195] (Connection relationship between proximity detection chip 10 and 3D shape measurement chip 20 and circuit board 7)

[0196] Next, according to Figure 4 The connection relationship between the proximity detection chip 10 and the 3D shape measurement chip 20 and the conductor pattern provided on the circuit board 7 will be explained.

[0197] On the circuit board 7, cathode pattern 71 and anode pattern 72 for proximity detection chip 10, and cathode pattern 73 and anode patterns 74A and 74B for 3D shape measurement chip 20 are provided as conductor patterns.

[0198] As described above, the proximity detection chip 10 has a cathode electrode 114 on its back side and an anode electrode 118 on its surface (see reference). Figure 5 The anode electrode 118 is connected to the p-side electrodes 112 of the four VCSEL-A and has a pad portion 118A for connecting the bonding line 76 described later.

[0199] Similarly, the 3D shape measuring chip 20 has a cathode electrode 214 on its back side and an anode electrode 218 on its surface (see reference). Figure 6 The anode electrode 218 is formed to connect to the VCSEL-B arranged in a matrix, and has pad portions 218A and 218B that extend in the ±y direction and connect to the bonding lines 75A and 75B described later.

[0200] The cathode pattern 71 used in the proximity detection chip 10 is formed with a wider area than the proximity detection chip 10 itself, to connect to the cathode electrode 114 disposed on the back side of the proximity detection chip 10. In the proximity detection chip 10, the cathode electrode 114 disposed on the back side is bonded to the cathode pattern 71 used in the proximity detection chip 10 on the circuit board 7 using a conductive adhesive. The pad portion 118A of the anode electrode 118 of the proximity detection chip 10 is connected to the anode pattern 72 on the circuit board 7 via a bonding line 76.

[0201] Similarly, the cathode pattern 73 for the 3D shape measuring chip 20 is formed with a wider area than the 3D shape measuring chip 20 to connect to the cathode electrode 214 disposed on the back side of the 3D shape measuring chip 20. The 3D shape measuring chip 20 is bonded to the cathode pattern 73 for the 3D shape measuring chip 20 by means of a conductive adhesive or the like.

[0202] The anode patterns 74A and 74B for the 3D shape measuring chip 20 are configured to be similar to the anode electrode 218 disposed on the surface of the 3D shape measuring chip 20 (see reference). Figure 6 The opposite sides (±y direction sides) of the anode patterns 74A and 74B are opposite each other. Furthermore, the anode patterns 74A and 74B are connected to the pad portions 218A and 218B of the anode electrode 218 of the 3D shape measuring chip 20 via bonding lines 75A and 75B, respectively. In addition, multiple bonding lines 75A and 75B are provided, but only one of them is marked with a reference numeral.

[0203] (Driver Method)

[0204] When it is desired to drive the proximity detection chip 10 and the 3D shape measuring chip 20 at a higher speed, it is sufficient to drive both the proximity detection chip 10 and the 3D shape measuring chip 20 together on the low side. Low-side driving refers to a structure in which the driving section, such as a MOS transistor, is located downstream of the current path relative to the driving object, such as a VCSEL. Conversely, a structure in which the driving section is located upstream is called high-side driving. In this exemplary embodiment, in order to set both the proximity detection chip 10 and the 3D shape measuring chip 20 to low-side driving, their cathodes are separated, allowing them to be driven independently.

[0205] Figure 12This diagram illustrates the low-side drive. Figure 12 This describes the relationship between the VCSEL-A of the proximity detection chip 10, the VCSEL-B of the 3D shape measurement chip 20, the first driving unit 50A, the second driving unit 50B, and the optical device control unit 8. The first driving unit 50A and the second driving unit 50B are grounded via MOS transistors. That is, by turning the MOS transistors on / off, the cathode side of the VCSEL is turned on / off, thereby being driven by the low side.

[0206] In addition, Figure 12 In this process, the anode sides of VCSEL-A in proximity detection chip 10 and VCSEL-B in 3D shape determination chip 20 are also separated.

[0207] (The configuration of the proximity detection chip 10, the 3D shape measurement chip 20, and the light receiving element 40 for light intensity monitoring in the light-emitting device 4)

[0208] Figure 13 This diagram illustrates the configuration of the proximity detection chip 10, the 3D shape measurement chip 20, and the light-receiving element 40 for light intensity monitoring in the light-emitting device 4. Figure 13 In this diagram, (a) shows the configuration described as an exemplary embodiment, (b) shows a first variation of the configuration, (c) shows a second variation of the configuration, and (d) shows a third variation of the configuration. Here, the proximity detection chip 10, the 3D shape measurement chip 20, the light-receiving element 40 for light intensity monitoring, and the bonding wire are shown; other details are omitted. Furthermore, the side of the 3D shape measurement chip 20, which has a quadrilateral planar shape, is designated as side 21A in the -x direction, side 21B in the +x direction, side 21C in the +y direction, and side 21D in the -y direction. Side 21A is opposite to side 21B, and side 21C is opposite to side 21D by connecting side 21A and side 21B. Side 21A is an example of a first side, side 21B is an example of a second side, side 21C is an example of a third side, and side 21D is an example of a fourth side.

[0209] In the role of Figure 13 The configuration described in this exemplary embodiment shown in (a) (refer to) Figure 3 In (a)), the light-receiving element 40 for light intensity monitoring is disposed on the side 21A of the 3D shape measurement chip 20 in the -x direction. The proximity detection chip 10 is disposed on the side 21B of the 3D shape measurement chip 20 in the +x direction. The anode electrode 218 of the 3D shape measurement chip 20 is connected (see reference). Figure 6 ) and the anode patterns 74A and 74B (refer to) provided on the circuit board 7 Figure 4The bonding lines 75A and 75B are configured to face the sides 21C and 21D of the 3D shape measuring chip 20 in the ±y direction. The bonding lines 75A and 75B are an example of wiring that supplies power to the second light-emitting element chip.

[0210] With this configuration of the exemplary embodiment, current is supplied symmetrically to each VCSEL-B of the 3D shape measurement chip 20 in the ±y direction. Therefore, as described later... Figure 13 Compared to the third comparative example of the configuration shown in (d), in the configuration of this exemplary embodiment, it is easier to supply current more uniformly to each VCSEL-B of the 3D shape measurement chip 20.

[0211] No bonding line is provided on the -x direction side 21A of the 3D shape measuring chip 20, on which the light-receiving element 40 for light intensity monitoring is disposed, thus making it easy to place the light-receiving element 40 for light intensity monitoring and the 3D shape measuring chip 20 close together. Therefore, in the configuration of this exemplary embodiment, compared with the configuration described later... Figure 13 Compared to the second comparative example with respect to configuration shown in (c), the light receiving element 40 for light quantity monitoring can more easily receive light reflected by the diffuser plate 30 from the emitted light from the 3D shape measuring chip 20.

[0212] exist Figure 13 In the first variation of the configuration shown in (b), the light-receiving element 40 for light intensity monitoring is positioned on the side 21B of the 3D shape measurement chip 20 in the +x direction and close to the outer side of the detection chip 10. That is, with Figure 13 Compared to the configuration shown in (a) of this exemplary embodiment, the distance between the 3D shape measuring chip 20 and the light receiving element 40 for light quantity monitoring is greater. Therefore, the amount of light reflected by the diffuser 30 from the emitted light from the 3D shape measuring chip 20 is reduced, making it difficult to receive the light reflected by the diffuser 30. Consequently, the detection accuracy may be reduced.

[0213] exist Figure 13 In the second variation of the configuration shown in (c), the light-receiving element 40 for light intensity monitoring is disposed on the side 21B of the 3D shape measuring chip 20 in the +x direction and between the 3D shape measuring chip 20 and the proximity detection chip 10. Therefore, it is easy to arrange the light-receiving element 40 for light intensity monitoring and the 3D shape measuring chip 20 close together. Therefore, compared with the aforementioned... Figure 13 The configuration is the same as in the exemplary embodiment shown in (a). In the second variation of the configuration, current is more readily supplied to each VCSEL-B of the 3D shape measuring chip 20, and the light receiving element 40 for light quantity monitoring readily receives the light reflected by the diffuser plate 30 from the emitted light of the 3D shape measuring chip 20.

[0214] exist Figure 13 In the third variation of the configuration shown in (d), no setting is provided. Figure 13 The bonding line 75A shown in (a) is provided in this exemplary embodiment. Instead, in the third variation, an anode pattern is additionally provided on the circuit board 7 on the side 21A side of the 3D shape measuring chip 20 in the -x direction, and a bonding line 75C is provided for connecting the anode electrode 218 of the 3D shape measuring chip 20 to the anode pattern additionally provided on the circuit board 7. In addition, multiple bonding lines 75C are provided, but only one of them is marked with a reference numeral.

[0215] exist Figure 13 In the third variation of the configuration shown in (d), the proximity detection chip 10 is disposed on the side 21D of the 3D shape measuring chip 20 in the -y direction, and the light receiving element 40 for light intensity monitoring is disposed on the side 21B of the 3D shape measuring chip 20 in the +x direction. Thus, the 3D shape measuring chip 20 and the light receiving element 40 are disposed close together. However, since current is supplied to the VCSEL-B of the 3D shape measuring chip 20 from both the side 21C in the +y direction and the side 21A in the -x direction, it is difficult to ensure that the current flows uniformly to each VCSEL-B of the 3D shape measuring chip 20. Therefore, the third variation is preferably used for specifications where even if the current flow is difficult to be uniform, the impact is minimal.

[0216] In the structure described above, the light-emitting device 4 and the 3D sensor 6 are disposed on a common circuit board 7, but they can also be disposed on different circuit boards. Furthermore, the light-emitting device 4 can be configured such that at least the proximity detection chip 10, the 3D shape measuring chip 20, the diffuser plate 30, and the sidewall 33 are disposed on a different substrate than the circuit board 7, and they are combined as a single light-emitting component (module) that can be connected to the circuit board 7, which houses the first driving unit 50A, the second driving unit 50B, and the 3D sensor 6. As an example, the maximum shape of the light-emitting component can be defined by covering the diffuser plate 30, the sidewall 33, and the substrate covering the proximity detection chip 10 and the 3D shape measuring chip 20. With such a structure, the first driving unit 50A, the second driving unit 50B, and the 3D sensor 6 are not mounted on the light-emitting component, thus allowing it to be supplied and distributed as a small component. Furthermore, since the proximity detection chip 10 and the 3D shape measurement chip 20 are sealed by the diffuser plate 30, the sidewall 33, and the substrate, dust and moisture protection can be achieved compared to the case where they are not sealed. Additionally, the light-emitting component may or may not include the light-receiving element 40 for monitoring light intensity.

[0217] Furthermore, the proximity detection chip 10 in the above structure does not necessarily have to be used in combination with the 3D shape measurement chip 20. For example, the proximity detection chip 10 can also be provided separately as a light-emitting element chip for distance measurement, regardless of whether 3D shape is measured. That is, it can also be provided as a single unit of a vertical cavity surface-emitting laser element array having multiple long resonant cavity structures connected in parallel with each other. In such a structure, when the light-emitting element chip is driven in a range lower than the range in which the power conversion efficiency is maximized (e.g., 4mW to 8mW), compared to the case where only one surface-emitting laser element is driven in the range in which the power conversion efficiency is maximized, the increase in divergence angle can be suppressed and the light density can be improved. In such a case, especially in a structure where the field of view of the light-receiving part is narrow and the illumination is performed in a range wider than the field of view of the light-receiving part in the irradiated surface, a light-receiving part with a higher SN ratio can be obtained.

[0218] Furthermore, the proximity detection chip 10 configured as described above can be applied not only to light-emitting element chips for distance measurement, but also to other applications where it is desirable to increase light density while suppressing the increase in divergence angle.

[0219] In summary, various exemplary embodiments have been described with reference to the accompanying drawings, but the present invention is not limited to these examples. It should be understood that those skilled in the art will obviously be able to conceive of various modifications or alterations within the scope of the claims, which are also within the technical scope of the present invention. Furthermore, the constituent elements in the above embodiments can be arbitrarily combined without departing from the spirit of the invention.

[0220] Furthermore, the contents of Japanese patent applications filed on March 25, 2019 (Japanese Patent Application No. 2019-56926) and April 2, 2019 (Japanese Patent Application No. 2019-070390) are incorporated herein by reference.

Claims

1. An optical device comprising: A first light-emitting element chip that is irradiated with light within a portion of the measurement range; The second light-emitting element chip has a larger light output than the first light-emitting element chip, is configured to be driven independently of the first light-emitting element chip, and is arranged side by side with the first light-emitting element chip; A light diffusion component includes: a first region disposed on the emission path of the first light-emitting element chip; and a second region disposed on the emission path of the second light-emitting element chip, wherein the diffusion angle of the second region is larger than that of the first region; The second light-receiving section receives first reflected light emitted from the first light-emitting element chip and reflected by the object being measured, and second reflected light emitted from the second light-emitting element chip and reflected by the object being measured; and The control unit, when the first reflected light indicates that the object being measured is within a predetermined distance, controls the second light-emitting element chip to emit light. The first region of the light diffusion component is positioned opposite to the location where the first light-emitting element chip is disposed, and the second region of the light diffusion component is positioned opposite to the location where the second light-emitting element chip is disposed. The light diffusion component is configured such that the first region and the second region are integrated into one component. In order to reduce the area of ​​the first region of the light diffusion component, the distance from the emission surface of the first light-emitting element chip to the light diffusion component is set to be shorter than the distance from the emission surface of the second light-emitting element chip to the light diffusion component.

2. The optical device as claimed in claim 1, wherein, The first region is configured to prevent an increase in the divergence angle of light emitted from the first light-emitting element chip.

3. The optical device as claimed in claim 2, wherein, The surface of the light diffusion component corresponding to the first region is a plane.

4. The optical device as claimed in claim 2, wherein, An optical element is provided in the first region to narrow the divergence angle of the light emitted from the first light-emitting element chip.

5. The optical device as claimed in claim 2, wherein, The first region is a through hole disposed in the light diffusion component.

6. The optical device as claimed in any one of claims 1 to 5, wherein, The first region is surrounded by the second region.

7. The optical device as claimed in claim 1, wherein, The first light-emitting element chip includes at least one first light-emitting element, and the second light-emitting element chip includes at least one second light-emitting element. The divergence angle of the light emitted from the first light-emitting element and directed toward the first region is narrower than the divergence angle of the light emitted from the second light-emitting element and directed toward the second region.

8. The optical device as claimed in claim 7, wherein, The first light-emitting element is a laser element that emits single-mode light.

9. The optical device as claimed in claim 8, wherein, The first light-emitting element is a vertical cavity surface-emitting laser element with a long resonant cavity structure. When the oscillation wavelength is λ, the length of the resonant cavity is more than 5λ and less than 20λ.

10. The optical device as claimed in claim 7, wherein, The second light-emitting element is a laser element that emits multimode light.

11. The optical device as claimed in claim 7, wherein, The first region is located at a position that does not overlap with the full width at half maximum (FWHM) region of the second light-emitting element constituting the second light-emitting element chip.

12. The optical device as claimed in claim 7, wherein, The at least one second light-emitting element includes a plurality of second light-emitting elements. The arrangement interval between the first light-emitting element and the second light-emitting element is wider than the arrangement interval between the plurality of second light-emitting elements.

13. The optical device as claimed in claim 12, wherein, Both the first and second light-emitting elements are vertical-cavity surface-emitting laser (VCSEL) elements. The optical device is driven in such a manner that the light output emitted from a vertical cavity surface-emitting laser element serving as the first light-emitting element is smaller than the light output emitted from a vertical cavity surface-emitting laser element serving as the second light-emitting element.

14. The optical device as claimed in claim 12, wherein, Both the first and second light-emitting elements are vertical-cavity surface-emitting laser (VCSEL) elements. The vertical-cavity surface-emitting laser element (VCSEL) is driven by light output, which has a lower power conversion efficiency than the VCSEL element used as the second light-emitting element.

15. The optical device as claimed in claim 13, wherein, The optical device is driven in such a way that the light output of a vertical cavity surface-emitting laser element, which serves as the first light-emitting element, is in the range of 1mW to 4mW.

16. The optical device as claimed in claim 14, wherein, The optical device is driven in such a way that the light output of a vertical cavity surface-emitting laser element, which serves as the first light-emitting element, is in the range of 1mW to 4mW.

17. The optical device as claimed in any one of claims 13 to 16, wherein, The optical device is driven in such a way that the light output of a vertical cavity surface-emitting laser element, which serves as the second light-emitting element, is in the range of 4mW to 8mW.

18. The optical device as claimed in any one of claims 13 to 16, wherein, The number of vertical cavity surface-emitting laser elements that serve as the first light-emitting element is more than one and less than 50.

19. The optical device as claimed in claim 17, wherein, The number of vertical cavity surface-emitting laser elements that serve as the first light-emitting element is more than one and less than 50.

20. The optical device according to any one of claims 13 to 16, wherein, The number of vertical cavity surface-emitting laser elements serving as the second light-emitting element is between 100 and 1000.

21. The optical device as claimed in claim 17, wherein, The number of vertical cavity surface-emitting laser elements serving as the second light-emitting element is between 100 and 1000.

22. The optical device as claimed in claim 18, wherein, The number of vertical cavity surface-emitting laser elements serving as the second light-emitting element is between 100 and 1000.

23. The optical device as claimed in claim 19, wherein, The number of vertical cavity surface-emitting laser elements serving as the second light-emitting element is between 100 and 1000.

24. The optical device as claimed in claim 1, comprising: The sidewall surrounds the first light-emitting element chip and the second light-emitting element chip. The first light-emitting element chip and the second light-emitting element chip are covered by the light-diffusing component supported by the sidewall.

25. The optical device as claimed in claim 1, comprising: The first light-receiving part receives reflected light emitted from the second light-emitting element chip and reflected by the second region of the light-diffusing component. The second light-emitting element chip includes: a first side surface; a second side surface opposite to the first side surface; a third side surface connecting the first side surface and the second side surface; and a fourth side surface disposed opposite to the third side surface and connected to the first side surface and the second side surface. The first light-receiving part is disposed on the first side side, and the first light-emitting element chip is disposed on the second side side.

26. The optical device as claimed in claim 25, comprising: Multiple wirings connect to the second light-emitting element chip and supply power to it. The plurality of wirings are disposed on the third side and the fourth side.

27. The optical device as claimed in claim 1, wherein, The second light-receiving unit outputs a signal corresponding to the time from when light is emitted from the first light-emitting element chip to when the light is received by the second light-receiving unit, and a signal corresponding to the time from when light is emitted from the second light-emitting element chip to when the light is received by the second light-receiving unit.

28. An information processing apparatus comprising: The optical device as claimed in claim 1; and The shape determination unit determines the three-dimensional shape of the object being measured based on the second reflected light emitted from a plurality of second light-emitting element chips of the optical device, reflected by the object being measured, and received by the second light-receiving unit of the optical device.

29. The information processing apparatus as claimed in claim 28, further comprising: The authentication processing unit performs authentication processing related to the use of the information processing device based on the determination result of the shape determination unit.

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