Input sensing device

Abstract

The present application relates to an input sensing device. The input sensing device includes a power line, a drive line, a first signal line including sub lines, a second signal line connected to the sub lines, and a sensor pixel connected to the power line, the drive line, and the first signal line, wherein at least one of the sensor pixels includes an optical sensor that transfers photoelectrically converted charges from the power line to a first node in response to a drive signal supplied through a first drive line of the drive line, a first transistor connected between the first node and a first sub line of the sub lines, wherein the first transistor includes a gate electrode connected to the first drive line, and a second transistor connected between the first node and a second sub line of the sub lines, wherein the second transistor includes a gate electrode connected to the first drive line.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2020-0046967, filed on April 17, 2020, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] Exemplary embodiments of the present invention relate to an input sensing device and a display device including the input sensing device. Background Technology

[0004] Biometric authentication is a form of security that measures and matches a user's biometric characteristics to verify that someone attempting to access a specific device is authorized to do so. For example, biometric authentication methods utilizing a user's fingerprint are widely used in display devices such as smartphones or tablet PCs. To provide fingerprint sensing functionality, a fingerprint sensor can be embedded in the display device or attached to and / or beneath the display device. This integration of a fingerprint sensor into a display device is called fingerprint on display (FoD).

[0005] A FoD (FoD) can include, for example, a photosensor. A FoD with a photosensor can use light-emitting elements disposed within pixels as a light source and includes an optical sensor array. The light-emitting elements can be used to illuminate a user's finger. The optical sensor array can be implemented, for example, a CMOS image sensor (CIS) and can capture an image of the illuminated finger.

[0006] The detection capability of an input sensing device can be degraded by noise from outside the input sensing device (e.g., a fingerprint sensor). In other words, the sensitivity of a fingerprint sensor may be reduced due to noise. Summary of the Invention

[0007] According to an exemplary embodiment of the present invention, an input sensing device is provided, comprising: a power line; a drive line; a first signal line including a sub-line; a second signal line connected to the sub-line; and a sensor pixel connected to the power line, the drive line, and the first signal line, wherein at least one of the sensor pixels comprises: an optical sensor, which, in response to a drive signal provided by the first drive line in the drive line, transfers photoelectrically converted charge from the power line to a first node; a first transistor connected between the first node and the first sub-line in the sub-line, wherein the first transistor includes a gate electrode connected to the first drive line; and a second transistor connected between the first node and the second sub-line in the sub-line, wherein the second transistor includes a gate electrode connected to the first drive line.

[0008] The optical sensor may include: a photodiode connected between the power line and the first node; and a transmission transistor connected between the photodiode and the first node, wherein the transmission transistor includes a gate electrode connected to the first drive line.

[0009] The sub-line can extend in the first direction and can be arranged along the first direction, the second signal line can be arranged parallel to the first signal line, and the drive line can extend in the second direction that intersects the first direction and is arranged along the first direction.

[0010] The second signal line can be connected to each of the first and second sub-lines.

[0011] The width of the second signal line can be greater than the width of the first signal line.

[0012] The input sensing device may further include: a first driver connected to a drive line, wherein the first driver sequentially provides drive signals to the drive line; and a second driver connected to a second signal line.

[0013] The sensor pixel furthest from the second driver may include an optical sensor and a single transistor directly connected to the first signal line.

[0014] The sensor pixel closest to the second driver may include an optical sensor and a single transistor directly connected to the first signal line.

[0015] According to an exemplary embodiment of the present invention, an input sensing device is provided, comprising: a power line; a drive line; a first signal line including a first sub-line, a second sub-line, and a third sub-line; a second signal line connected to the first signal line; and a sensor pixel group connected to the power line, the drive line, and the first signal line, wherein at least one sensor pixel group comprises: a first optical sensor for transferring photoelectrically converted charge from the power line to the second sub-line in response to a drive signal provided through the first drive line in the drive line; a second optical sensor for transferring photoelectrically converted charge from the power line to the second sub-line in response to a drive signal provided through the second drive line in the drive line; and a first transistor connected between the first sub-line and the second sub-line, wherein the first transistor includes a gate electrode connected to the first drive line.

[0016] At least one sensor pixel group further includes: a second transistor connected between the third sub-line and the second sub-line, wherein the second transistor includes a gate electrode connected to the second drive line.

[0017] The first sub-line, the second sub-line, and the third sub-line can extend in a first direction and can be arranged along the first direction. The second signal line can be arranged parallel to the first signal line, and the drive line can extend in a second direction that intersects the first direction and be arranged along the first direction.

[0018] Each of the first optical sensor and the second optical sensor may include: a photodiode connected between the power line and the second sub-line; and a transmission transistor connected between the photodiode and the second sub-line, wherein the transmission transistor includes a gate electrode connected to a corresponding drive line in the drive line.

[0019] The second signal line can be directly connected to each of the first and third sub-lines, and can also be disconnected from the second sub-line.

[0020] The optical sensor may also include a third optical sensor. Each of the first, second, and third optical sensors may include: a photodiode connected between the power line and the second sub-line; and a transmission transistor connected between the photodiode and the second sub-line, wherein the transmission transistor includes a gate electrode connected to a corresponding drive line in the drive line.

[0021] The second driving line can be the same as the first driving line, and the second driving line can be different from the driving line connected to the gate electrode of the transmission transistor in each of the first optical sensor, the second optical sensor, and the third optical sensor.

[0022] When a first drive signal with a gate on-voltage level is applied to the first drive line, a second drive signal with a gate on-voltage level can be sequentially provided to the first optical sensor, the second optical sensor, and the third optical sensor.

[0023] According to an exemplary embodiment of the present invention, a display device is provided, comprising: a display panel including pixels for displaying images; and an input sensing panel disposed below the display panel for sensing light, wherein the input sensing panel includes: power lines; drive lines; a first signal line including sub-lines; a second signal line connected to the sub-lines; and sensor pixels connected to the power lines, drive lines, and the first signal line, wherein the first sensor pixel of the sensor pixels includes: a photodiode including a first electrode connected to the power lines; a transmission transistor including a first electrode connected to a second electrode of the photodiode and a gate electrode connected to a first drive line of the drive lines; and a first transistor including a first electrode connected to a first sub-line of the sub-lines, a second electrode connected to a second electrode of the transmission transistor, and a gate electrode connected to the first drive line, and wherein the second sensor pixel of the sensor pixels includes: a photodiode including a first electrode connected to the power lines; a transmission transistor including a first electrode connected to a second electrode of the photodiode and a gate electrode connected to a second drive line of the drive lines; and a second transistor including a first electrode connected to a second electrode of the transmission transistor, a second electrode connected to a third sub-line of the sub-lines, and a gate electrode connected to the second drive line.

[0024] The sub-line can extend in a first direction and can be arranged along the first direction, the second signal line can be arranged parallel to the first signal line, and the drive line can extend in a second direction that intersects the first direction and can be arranged along the first direction.

[0025] The second electrode of the first transistor can be connected to the first electrode of the second transistor via the second sub-line in the sub-line, and the second sub-line can be disposed between the first sub-line and the third sub-line.

[0026] The second signal line can be directly connected to each of the first and third sub-lines, and can also be disconnected from the second sub-line.

[0027] According to an exemplary embodiment of the present invention, an input sensing device is provided, comprising: a power line; a first drive line; a first signal line, including a first sub-line and a second sub-line; a second signal line connected to the first sub-line and the second sub-line; an optical sensor connected between the power line and a first node; a first transistor connected between the first node and the first sub-line; and

[0028] The second transistor is connected between the first node and the second sub-line.

[0029] The first node can be directly connected to the first transistor and the second transistor.

[0030] The gate electrode of the first transistor can be connected to the first drive line, and the gate electrode of the second transistor can be connected to the first drive line.

[0031] The first sub-line can be electrically connected to the second sub-line via the first transistor and the second transistor.

[0032] The width of the second signal line can be greater than the width of the first signal line. Attached Figure Description

[0033] Figure 1A This is a block diagram illustrating a display device according to an exemplary embodiment of the present invention.

[0034] Figure 1B It is shown Figure 1A A block diagram of another exemplary embodiment of the display device.

[0035] Figure 2A yes Figure 1A A cross-sectional view of the display device.

[0036] Figure 2B yes Figure 1A A cross-sectional view of the display device.

[0037] Figure 3 It is shown Figure 1A A block diagram of an exemplary implementation of an input sensing device included in a display device.

[0038] Figure 4 It is shown Figure 3 A circuit diagram of an exemplary implementation of an input sensing device.

[0039] Figure 5 It is shown Figure 4 A figure showing an exemplary implementation of sensor pixels included in an input sensing device.

[0040] Figure 6 This describes an exemplary embodiment of the present invention. Figure 5 The waveform diagram of the operation of the sensor pixels.

[0041] Figure 7 It is a description of Figure 5 A graph showing the noise variation caused by sensor pixels.

[0042] Figure 8 It is shown Figure 3 A circuit diagram of another exemplary embodiment of the input sensing device.

[0043] Figure 9A and Figure 9B It is shown Figure 3 A circuit diagram of an exemplary embodiment of a sensor array included in an input sensing device.

[0044] Figure 10 It is shown Figure 1A A block diagram of another exemplary embodiment of an input sensing device included in a display device.

[0045] Figure 11 It is shown Figure 10 A circuit diagram of an exemplary embodiment of a sensor array included in an input sensing device.

[0046] Figure 12 This describes an exemplary embodiment of the present invention. Figure 11 The waveform diagram of the operation of the sensor array. Detailed Implementation

[0047] In the following, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it should be understood that the described embodiments can be modified in many different ways and therefore should not be limited to the embodiments described herein.

[0048] Throughout the specification, the same reference numerals may refer to the same parts.

[0049] Furthermore, for clarity, the dimensions and thicknesses of the elements in the accompanying drawings may be exaggerated.

[0050] Figure 1A This is a block diagram illustrating a display device according to an exemplary embodiment of the present invention. Figure 1B It is shown Figure 1A A block diagram of another exemplary embodiment of the display device. Figure 1A and Figure 1B The image shows a display device schematically.

[0051] refer to Figure 1A and Figure 1B The display device 1000 may include a display panel 100 and a driver 200. For better understanding and ease of description, in Figure 1A and Figure 1B The display panel 100 and driver 200 are shown separately, but the invention is not limited thereto. For example, all or part of the driver 200 may be integrally implemented on the display panel 100.

[0052] All or at least a portion of the display panel 100 may be flexible.

[0053] Display panel 100 includes a display area AA and a non-display area NA. The non-display area NA may surround all or part of the display area AA. Pixels PXL (or multiple pixels) may be disposed in the display area AA, and the display area AA may be referred to as the effective area. Pixels PXL may include at least one light-emitting element. Display device 1000 may drive pixels PXL in response to image data input from an external source, and may display an image in the display area AA.

[0054] In an exemplary embodiment of the present invention, the display area AA may include an input sensing area FSA. At least some of the pixels PXL disposed in the display area AA may be included in the input sensing area FSA.

[0055] In an exemplary embodiment of the present invention, such as Figure 1A As shown, at least a portion of the display area AA can be set as the input sensing area FSA.

[0056] Figure 1A An exemplary implementation is shown where only one input sensing area FSA is set in the display area AA, but the invention is not limited thereto. For example, multiple input sensing areas FSAs can be set in the display area AA in a regular or irregular arrangement. Furthermore, the input sensing areas FSA can be located anywhere in the display area AA.

[0057] For example, Figure 1A An exemplary embodiment in which the input sensing region FSA is disposed in at least a portion of the display region AA is shown, but the invention is not limited thereto. For example, only at least a portion of the input sensing region FSA may overlap with at least a portion of the display region AA.

[0058] In another exemplary embodiment of the present invention, such as Figure 1B As shown, the entire display area AA can be set as the input sensing area FSA. In this case, when an input sensing operation is performed, the input sensing operation can be performed only on a portion of the display area AA touched by the user. In the following text, the user's input may refer to patterns formed by the ridges of the user's skin or biometric information, and may include, for example, the user's fingerprint or palm print.

[0059] The non-display area NA can be set around the display area AA and can be referred to as an inactive area. For example, the non-display area NA can include line areas, pad areas, and various dummy areas.

[0060] In an exemplary embodiment of the present invention, the display device 1000 may further include a sensor pixel SPXL (or multiple sensor pixels) in the input sensing area FSA. The sensor pixel SPXL may consist of a sensor for sensing light. In an exemplary embodiment of the present invention, when light emitted from a light source (or pixel PXL) disposed in the display device 1000 is reflected by the user's body (e.g., fingers, palm, etc.), the sensor pixel SPXL can sense the reflected light and output a corresponding electrical signal (e.g., a voltage signal). The electrical signal may be transmitted to the driver 200 (e.g., input detector 220) and may be used for input sensing. Hereinafter, the present invention will be described with reference to an exemplary embodiment in which the sensor pixel SPXL is used for input sensing (e.g., fingerprint sensing). However, it should be understood that the sensor pixel SPXL may be used to perform various other functions, such as those of a touch sensor, scanner, etc.

[0061] When sensor pixel SPXL is positioned within (or on) the input sensing area FSA, sensor pixel SPXL can overlap with or surround pixel PXL. For example, some or all of sensor pixel SPXL can overlap with pixel PXL, or sensor pixel SPXL can be positioned between adjacent pixels PXL. Sensor pixel SPXL and pixel PXL can have the same or different dimensions. The relative dimensions and arrangement between sensor pixel SPXL and pixel PXL are not particularly limited.

[0062] When sensor pixel SPXL is configured to be adjacent to or at least partially overlap with pixel PXL, sensor pixel SPXL can use a light-emitting element disposed in pixel PXL as a light source. In this case, sensor pixel SPXL and the light-emitting element disposed in pixel PXL together can be a photosensitive type input sensing sensor. When using pixel PXL as a light source without a separate external light source to configure an input sensing sensor embedded display device (e.g., a fingerprint sensor embedded display device), the thickness of the photosensitive type input sensing sensor and the display device including it can be reduced, and its manufacturing cost can be reduced.

[0063] In an exemplary embodiment of the present invention, the sensor pixels SPXL may be disposed on different surfaces (e.g., the rear surface) of the display panel 100 on both sides of the surface on which the image is displayed (e.g., the front surface). However, the present invention is not limited thereto.

[0064] Driver 200 can drive display panel 100. For example, driver 200 can output a data signal DS corresponding to image data to display panel 100. In addition, driver 200 can output a drive signal for sensor pixel SPXL and can receive electrical signals (e.g., sensing signal SS) from sensor pixel SPXL. Driver 200 can use electrical signals to detect user input (e.g., fingerprint, palm print, etc.).

[0065] In an exemplary embodiment of the present invention, the driver 200 may include a panel driver 210 and an input detector 220. For better understanding and ease of description, in Figure 1A and Figure 1B Panel driver 210 and input detector 220 are shown separately, but the invention is not limited thereto. For example, at least a portion of input detector 220 may be integrated with panel driver 210, or may operate together with panel driver 210.

[0066] The panel driver 210 can provide a data signal DS corresponding to the image data to the pixels PXL while sequentially scanning the pixels PXL of the display area AA. In this case, the display panel 100 can display an image corresponding to the image data.

[0067] In an exemplary embodiment of the present invention, the panel driver 210 may provide a driving signal for fingerprint sensing to the pixel PXL. Here, the driving signal may be provided to the pixel PXL, causing the pixel PXL to emit light and operate as a light source for the sensor pixel SPXL. In this embodiment, the driving signal for fingerprint sensing may be provided to the pixel PXL located in a specific area of ​​the display panel 100 (e.g., the pixel PXL located in the input sensing area FSA).

[0068] In an exemplary embodiment of the present invention, image data corresponding to the input sensing area FSA can be provided or controlled by the input detector 220. For example, when performing an input sensing operation, the input detector 220 can provide image data corresponding to the image to be displayed in the input sensing area FSA. Alternatively, when performing an input sensing operation, the input detector 220 can provide a control signal IPD to the panel driver 210.

[0069] In addition, the input detector 220 can provide a drive signal for fingerprint sensing to the sensor pixel SPXL.

[0070] Input detector 220 can transmit a driving signal (e.g., driving voltage) to sensor pixel SPXL and can detect user input based on electrical signals received from sensor pixel SPXL. For example, input detector 220 can detect a user's fingerprint or palm print based on sensing signals SS provided from sensor pixel SPXL (or a sensor array including sensor pixel SPXL).

[0071] The input detector 220 and the sensor pixel SPXL (or sensor array) can constitute an input sensing device.

[0072] Figure 2A yes Figure 1A A cross-sectional view of the display device. Figure 2A It shows Figure 1A and Figure 1B The cross-section of the input sensing area FSA of the display device 1000.

[0073] refer to Figures 1A to 2A The display device 1000 may include a display panel 100 and a sensor array PS (or input sensing panel) disposed on one surface of the display panel 100 in an input sensing region FSA. Furthermore, the display device 1000 may include a substrate SUB and a circuit element layer BPL, a light-emitting element layer LDL, a first protective layer PTL1, a first adhesive layer ADL1, and a window WIN sequentially disposed on one surface (e.g., the upper surface) of the substrate SUB. Additionally, the display device 1000 may include a second adhesive layer ADL2 and a second protective layer PTL2 sequentially disposed on another surface (e.g., the lower surface) of the substrate SUB. In other words, the circuit element layer BPL, the light-emitting element layer LDL, the first protective layer PTL1, the first adhesive layer ADL1, and the window WIN may be disposed on the first surface of the substrate SUB, and the second adhesive layer ADL2 and the second protective layer PTL2 may be disposed on the second surface of the substrate SUB. The first and second surfaces of the substrate SUB may face each other.

[0074] The substrate SUB can be the base substrate of the display panel 100, and can be a substantially transparent light-transmitting substrate. The substrate SUB can be a rigid substrate including glass or tempered glass, or a flexible substrate including plastic materials. However, the material of the substrate SUB is not limited to these, and the substrate SUB can be made of various materials.

[0075] The circuit element layer BPL can be disposed on one surface of the substrate SUB and can include at least one conductive layer. For example, the circuit element layer BPL can include multiple circuit elements constituting the pixel circuitry of the pixel PXL, as well as lines for providing various powers and signals to drive the pixel PXL. In this case, the circuit element layer BPL can include multiple conductive layers constituting various circuit elements (such as at least one transistor, capacitor, etc.) and lines connected to the various circuit elements. Furthermore, the circuit element layer BPL can include at least one insulating layer disposed between the multiple conductive layers.

[0076] A light-emitting element layer (LDL) can be disposed on one surface of a circuit element layer (BPL). The LDL can include light-emitting elements (LDs) (or multiple light-emitting elements) connected to the circuit element layer (BPL) via contact holes or the like. Multiple light-emitting elements (LDs) can be spaced apart from each other on the surface of the circuit element layer (BPL). In an exemplary embodiment of the invention, at least one light-emitting element (LD) can be disposed in a pixel (PXL) (or pixel region (PXA)). For example, the light-emitting element (LD) can be composed of organic or inorganic light-emitting elements such as micro light-emitting diodes (LEDs) or quantum dot light-emitting diodes (LEDs). Furthermore, the light-emitting element (LD) can be a light-emitting element composed of a combination of organic and inorganic materials.

[0077] The pixel PXL may include circuit elements disposed in the circuit element layer BPL and at least one light-emitting element LD disposed in the light-emitting element layer LDL on the circuit element layer BPL.

[0078] The first protective layer PTL1 can be disposed on the light-emitting element layer LDL to cover the display area AA. The first protective layer PTL1 may include sealing members, such as thin-film encapsulation (TFE) or encapsulation substrate, and may also include a protective film in addition to the sealing members.

[0079] The first adhesive layer ADL1 may be disposed between the first protective layer PTL1 and the window WIN to bond the first protective layer PTL1 and the window WIN. The first adhesive layer ADL1 may include a transparent adhesive, such as optically clear adhesive (OCA) or optically clear resin (OCR), and may also include various adhesive materials.

[0080] The window WIN can be a protective member disposed on top of a module of a display device 1000 including a display panel 100, and can be a substantially transparent light-transmitting substrate. The window WIN can have a multilayer structure composed of a glass substrate, a plastic film, and / or a plastic substrate. The window WIN can include rigid or flexible materials, and the constituent materials of the window WIN are not particularly limited thereto.

[0081] The display device 1000 may also include a polarizer, an anti-reflective layer, and / or a touch sensor layer. For example, the display device 1000 may also include a polarizer and / or a touch sensor layer disposed between the first protective layer PTL1 and the window WIN.

[0082] The second protective layer PTL2 can be disposed on the other surface of the substrate SUB. The second protective layer PTL2 can be bonded to the substrate SUB via the second adhesive layer ADL2.

[0083] The second adhesive layer ADL2 can firmly bond (or attach) the substrate SUB and the second protective layer PTL2. The second adhesive layer ADL2 may include a transparent adhesive, such as an optically transparent adhesive (OCA). The second adhesive layer ADL2 may include a pressure-sensitive adhesive (PSA), wherein the adhesive material functions when pressure is applied to the adhesive surface of the pressure-sensitive adhesive.

[0084] The second protective layer PTL2 can block the inflow of oxygen and / or moisture from the outside and can be configured as a single layer or multiple layers. The second protective layer PTL2 can be formed by a film profile to further ensure the flexibility of the display panel 100. The second protective layer PTL2 can be bonded to the sensor array PS by another adhesive layer including a transparent adhesive such as OCA.

[0085] A selective light-blocking film may also be disposed below the second protective layer PTL2. The selective light-blocking film can block light of a specific frequency band (e.g., infrared light) incident on the display device 1000, thereby preventing light from incident on the sensor pixels SPXL of the sensor array PS. The selective light-blocking film may be disposed below the second protective layer PTL2, but the invention is not limited thereto.

[0086] The sensor array PS can be attached to another surface (e.g., the back side) of the display panel 100 using an adhesive or the like, to overlap with at least one area of ​​the display panel 100. For example, the sensor array PS can overlap with the display panel 100 in the input sensing area FSA. The sensor array PS may include sensor pixels SPXL (or multiple sensor pixels) distributed at a predetermined resolution and / or interval. For example, multiple sensor pixels SPXL can be spaced apart from each other in the sensor array PS.

[0087] In an exemplary embodiment of the present invention, an optical system can be disposed on a sensor array PS, which converges light directed towards the sensor array PS and provides an optical path. The width of the light transmission portion of the guide light in the optical system can be determined taking into account sensing accuracy and light conversion efficiency. The focusing efficiency of light incident on the sensor array PS through the optical system can be improved. The optical system can be formed from optical fibers, silicon, etc.

[0088] The sensor pixels SPXL can have a certain number, size, and arrangement, so that a fingerprint image can be obtained based on the electrical signals output by the sensor pixels SPXL. The sensor pixels SPXL and another sensor pixel SPXL can be densely arranged so that light reflected from the sensed object (e.g., fingerprint) can be incident on adjacent sensor pixels SPXL.

[0089] The sensor pixel SPXL can sense external light and output an electrical signal, such as a voltage signal, corresponding to the external light. Because valleys and ridges are formed in the user's body (e.g., a finger), the reflected light incident on the sensor pixel SPXL can possess optical characteristics (e.g., frequency, wavelength, size, etc.). Therefore, the sensor pixel SPXL can output a sensing signal SS corresponding to the optical characteristics of the reflected light.

[0090] The sensing signal SS output from the sensor pixel SPXL can be converted into image data by the input detector 220 and can be used for user identification (e.g., fingerprint authentication).

[0091] Figure 2B yes Figure 1A A cross-sectional view of the display device.

[0092] refer to Figure 1A , Figure 2A and Figure 2B The display device 1000 may further include a light-blocking layer PHL containing a pinhole PIH. The light-blocking layer PHL may be disposed within the display panel 100, or between the display panel 100 and the sensor pixel SPXL, and may block some of the light incident on the sensor pixel SPXL. For example, some of the light incident on the light-blocking layer PHL may be blocked, while other light incident on the light-blocking layer PHL may pass through the pinhole PIH to reach the sensor pixel SPXL below the light-blocking layer PHL. For example, as... Figure 2B As shown, some of the light incident on the light-blocking layer PHL can pass through the pinhole PIH and reach multiple sensor pixels SPXL. Other light incident on the light-blocking layer PHL can be reflected back to the window WIN.

[0093] A pinhole PIH can refer to an optical aperture and can be a type of light-transmitting aperture. For example, a pinhole PIH can be a light-transmitting aperture with the smallest size (or area) formed by layers overlapping each other along a path in a display device 1000, through which reflected light passes diagonally or vertically through the display panel 100 and enters the sensor pixel SPXL.

[0094] The pinhole PIH can have a predetermined width, for example, a width in the range of 5 μm to 20 μm. Therefore, as the distance from the light-blocking layer PHL increases (e.g., as it moves up and down from the light-blocking layer PHL), the width of the optical opening region in each layer of the display device 1000 can gradually increase.

[0095] The width (or diameter) of the pinhole PIH can be set to approximately 10 times or more the wavelength of the reflected light, for example, approximately 4 μm or 5 μm or larger, to prevent light diffraction. Furthermore, the width of the pinhole PIH can be set to a size sufficient to prevent image blurring and to more clearly sense the shape of the fingerprint. For example, the width of the pinhole PIH can be set to approximately 15 μm or less. However, the invention is not limited thereto, and the width of the pinhole PIH can vary depending on the wavelength band of the reflected light, the thickness of each layer of the module, etc.

[0096] Only the reflected light passing through the pinhole PIH can reach the sensor pixels SPXL of the sensor array PS. Due to the very narrow pinhole PIH, the phase of the light reflected from the fingerprint and the phase of the image formed on the sensor array PS can differ by 180 degrees.

[0097] The sensor pixel SPXL can output a sensing signal SS corresponding to the reflected light passing through the pinhole PIH, such as a voltage signal.

[0098] However, this is just an example, and the configuration, setup, and driving method of the sensor array PS used to detect reflected light from fingerprints are not limited to this. Figure 2A or Figure 2B The sensor array PS shown in the figure.

[0099] Figure 3 It is shown Figure 1A A block diagram of an exemplary embodiment of an input sensing device included in a display device. The input sensing device ISD may include a sensor array PS and an input detector 220.

[0100] Reference Figure 1A and Figure 3 The sensor array PS (or input sensing panel) may include sensor pixels SPXL. In an exemplary embodiment of the invention, the sensor pixels SPXL may be arranged in a two-dimensional array, but are not limited thereto. The sensor pixels SPXL may include photoelectric elements that photoelectrically convert incident light into electrical charge according to the amount of light.

[0101] The input detector 220 may include a horizontal driver 221 (e.g., a first driver or scan drive circuit), a vertical driver 222 (e.g., a second driver or lead-out circuit), and a controller 223.

[0102] Horizontal driver 221 can be connected to sensor pixel SPXL via drive lines H1 to Hn (where n is an integer of two or greater). Horizontal driver 221 can consist of a shift register or an address decoder and can sequentially apply drive signals (or multiple drive signals) to drive lines H1 to Hn. Here, the drive signals can be signals used to selectively drive sensor pixel SPXL. For example, horizontal driver 221 can apply drive signals on a per-row basis. For example, drive signals can be provided to the sensor pixel row connected to the first drive line H1.

[0103] The sensor pixel SPXL, selected and driven by the horizontal driver 221, can use its photoelectric elements to sense light and can output an electrical signal (e.g., a sensing signal SS) corresponding to the sensed light, such as a voltage signal. The electrical signal can be an analog signal. In other words, the sensing signal SS can be an analog signal.

[0104] The vertical driver 222 can be connected to output lines V1 to Vm (where m is a two- or larger integer), and can also be connected to the sensor pixel SPXL via output lines V1 to Vm. The vertical driver 222 can process the signal output from the sensor pixel SPXL.

[0105] For example, the vertical driver 222 can perform a correlated double sampling (CDS) process to remove noise from the electrical signal provided from the sensor pixel SPXL. Furthermore, the vertical driver 222 can convert analog-type electrical signals into digital-type signals. In an exemplary embodiment of the invention, an analog-to-digital converter can be provided for each sensor pixel column, and the analog-to-digital converters can process the electrical signals (or analog signals) provided from the sensor pixel columns in parallel.

[0106] The controller 223 can control the horizontal driver 221 and the vertical driver 222.

[0107] For example, controller 223 may provide horizontal driver 221 with a first drive voltage (e.g., gate cutoff voltage), a second drive voltage (e.g., gate on voltage), a common voltage, a clock signal, and a control signal (e.g., a start pulse). In this case, horizontal driver 221 may generate drive signals based on the signals provided from controller 223 to selectively drive sensor pixel SPXL.

[0108] For example, controller 223 can provide clock signals and control signals to vertical driver 222. In this case, vertical driver 222 can periodically sample sensing signals SS provided from sensor pixels SPXL based on clock signals and control signals, and can convert the sampled signals into digital signals.

[0109] In an exemplary embodiment of the present invention, the controller 223 can generate image data corresponding to the sensing signal SS received from the vertical driver 222, and can process the generated image data. Furthermore, the controller 223 can detect input (e.g., fingerprint, palm print, etc.) from the processed image data, and can authenticate the detected input or transmit the processed image data externally.

[0110] However, this is merely an example, and the generation and input detection of image data may not be performed by the controller 223. For instance, image data generation and input detection may be performed by an external host processor, etc.

[0111] Horizontal driver 221, vertical driver 222 and controller 223 in Figure 3 The components are shown as being formed independently, but the invention is not limited thereto. For example, the vertical driver 222 and the controller 223 can be implemented as a single integrated circuit, and the horizontal driver 221 can be formed on the sensor array PS using the same process as the sensor pixel SPXL.

[0112] Figure 4 It is shown Figure 3 A circuit diagram of an exemplary implementation of an input sensing device (ISD). Figure 4 The diagram briefly illustrates an input sensing device ISD, comprising sensor pixels SPXL included in the (i-1)th sensor pixel row to the (i+1)th sensor pixel row (where i is a positive integer less than n) and the (j-1)th sensor pixel column to the (j+1)th sensor pixel column (where j is a positive integer less than m), and a vertical driver 222 (or integrated circuit) connected thereto. Figure 5 It is shown Figure 4 A figure showing an exemplary implementation of the sensor pixel SPXL included in the input sensing device ISD. Figure 5 The sensor pixels SPXL included in the i-th sensor pixel row and j-th sensor pixel column are shown.

[0113] Reference Figures 3 to 5 The input sensing device ISD (or sensor array PS) may include drive lines Hi-1, Hi and Hi+1, output lines Vj-1, Vj and Vj+1 (or second signal lines), signal lines RXj-1, RXj and RXj+1 (or first signal lines), power line PL1, and sensor pixels SPXL connected to them.

[0114] The drive lines Hi-1, Hi, and Hi+1 can extend on the second direction DR2 and can be arranged on the first direction DR1, which intersects the second direction DR2.

[0115] The output lines Vj-1, Vj, and Vj+1 can be extended in the first direction DR1 and can be arranged in the second direction DR2.

[0116] Signal lines RXj-1, RXj, and RXj+1 can extend along the first direction DR1 and can be arranged along the second direction DR2. Signal lines RXj-1, RXj, and RXj+1 can extend parallel to output lines Vj-1, Vj, and Vj+1, and signal lines RXj-1, RXj, and RXj+1, as well as output lines Vj-1, Vj, and Vj+1, can be alternately arranged along the second direction DR2.

[0117] In an exemplary embodiment of the present invention, each of the signal lines RXj-1, RXj, and RXj+1 may include multiple sub-lines. For example... Figure 5 As shown, the j-th signal line RXj may include a first sub-line RX_S1 and a second sub-line RX_S2. The first sub-line RX_S1 and the second sub-line RX_S2 may extend along a first direction DR1 and may be arranged along the first direction DR1. The first sub-line RX_S1 may be separate from the second sub-line RX_S2. For example, a pair of transistors may be disposed between the first sub-line RX_S1 and the second sub-line RX_S2.

[0118] The power lines PL1 can be arranged in a matrix, and a common voltage VCOM (e.g., ground voltage) can be applied to the power lines PL1.

[0119] The sensor pixel SPXL can be connected to drive lines Hi-1, Hi and Hi+1, output lines Vj-1, Vj and Vj+1 (or second signal lines), signal lines RXj-1, RXj and RXj+1 (or first signal lines) and power line PL1.

[0120] Since sensor pixels SPXL are essentially equivalent to each other, the sensor pixels SPXL included in the i-th sensor pixel row and j-th sensor pixel column, which are representatives of sensor pixels SPXL, will be described.

[0121] Reference Figure 5 The sensor pixel SPXL may include an optical sensor PSC, a first transistor T1, and a second transistor T2.

[0122] The optical sensor PSC can be connected to the power line PL1, the i-th drive line Hi, and the first node N1, and can convert the photoelectric charge (or sensing signal SS, see [link]) in response to the drive signal provided through the i-th drive line Hi. Figure 1A Transmitted to the first node N1.

[0123] In an exemplary embodiment of the present invention, the optical sensor PSC may include a photodiode PD and a transmission transistor T_TX.

[0124] A photodiode PD can be electrically connected between the power line PL1 and the first node N1, and can generate charge (or current) based on incident light. In other words, the photodiode PD can perform photoelectric conversion. For example, the anode of the photodiode PD can be connected to the power line PL1, and the cathode of the photodiode PD can be electrically connected to the first node N1. In other words, the first terminal of the photodiode PD can be connected to the power line PL1, and the second terminal of the photodiode PD can be electrically connected to the first node N1.

[0125] The transmission transistor T_TX may include a first electrode (or a first transistor electrode) connected to the cathode of the photodiode PD, a second electrode (or a second transistor electrode) electrically connected to the first node N1, and a gate electrode connected to the i-th driving line Hi.

[0126] In other words, the transfer transistor T_TX can be electrically connected between the cathode of the photodiode PD and the first node N1. In this case, the transfer transistor T_TX can be turned on in response to a drive signal provided through the i-th drive line Hi (e.g., a drive signal at the gate on-voltage level of the conducting transistor), and can transfer the photoelectric converted charge from the photodiode PD to the first node N1.

[0127] exist Figure 5 In the diagram, the optical sensor PSC is shown as including a photodiode PD and a transmission transistor T_TX, but the optical sensor PSC is not limited to this. For example, the optical sensor PSC may also include a transistor for initializing the photodiode PD, a capacitor for temporarily storing the charge of the photodiode PD, and a transistor for transmitting a predetermined signal (e.g., current) (instead of the charge of the photodiode PD) to the first node N1 in response to the charge of the photodiode PD.

[0128] The first transistor T1 may include a first electrode connected to the first sub-line RX_S1, a second electrode connected to the first node N1, and a gate electrode connected to the i-th drive line Hi. In other words, the first transistor T1 may be connected between the first sub-line RX_S1 and the first node N1. In this case, the first transistor T1 may be turned on in response to a drive signal (e.g., a drive signal with a gate on-voltage level) provided through the i-th drive line Hi, and may electrically connect the first node N1 and the first sub-line RX_S1.

[0129] The second transistor T2 may include a first electrode connected to the first node N1, a second electrode connected to the second sub-line RX_S2, and a gate electrode connected to the i-th drive line Hi. In other words, the second transistor T2 may be connected between the second sub-line RX_S2 and the first node N1. In this case, the second transistor T2 may be turned on in response to a drive signal (e.g., a drive signal with a gate on-voltage level) provided through the i-th drive line Hi, and may be electrically connected to the first node N1 and the second sub-line RX_S2. When the first transistor T1 and the second transistor T2 are turned on, the first sub-line RX_S1 and the second sub-line RX_S2 may be electrically connected to each other.

[0130] The j-th output line Vj can be connected to each of the first sub-line RX_S1 and the second sub-line RX_S2. In this case, the first electrode of the first transistor T1 can be electrically connected to the j-th output line Vj through the first sub-line RX_S1, and the second electrode of the second transistor T2 can be electrically connected to the j-th output line Vj through the second sub-line RX_S2. Here, the first transistor T1 and the second transistor T2 can form a current path between the first node N1 and the j-th output line Vj in response to the drive signal provided through the i-th drive line Hi.

[0131] When the drive signal is not applied to the i-th drive line Hi (or when a drive signal at a gate cutoff voltage level that turns off the transistor is applied to the i-th drive line Hi), the first transistor T1 and the second transistor T2 can remain in the off state, and the optical sensor PSC can be electrically isolated from the j-th signal line RXj (e.g., the first sub-line RX_S1 and the second sub-line RX_S2). Furthermore, since the drive signal is not applied to the i-th drive line Hi, the first sub-line RX_S1 and the second sub-line RX_S2 can be electrically isolated from each other, reducing the likelihood and magnitude of noise flowing through the j-th signal line RXj. For example, since the first sub-line RX_S1 and the second sub-line RX_S2 are electrically isolated, the wiring length for the j-th signal line RXj is reduced, thereby reducing the amount of noise.

[0132] In addition, the first transistor T1 and the second transistor T2 can block the leakage current flowing through the transmission transistor T_TX, and can also block the noise caused by the leakage current of the unselected sensor pixel SPXL.

[0133] In other words, the first transistor T1 and the second transistor T2 can form a noise prevention circuit for each sensor pixel SPXL.

[0134] In an exemplary embodiment of the invention, the load (or resistance value) of the j-th output line Vj can be smaller than the load of the j-th signal line RXj. For example, the first linewidth W1 of the j-th output line Vj can be larger than the second linewidth W2 of the j-th signal line RXj (e.g., the second sub-line RX_S2). Noise can be blocked by the j-th signal line RXj with a relatively large load, and charge (e.g., a sensing signal with reduced noise) can be directly supplied to the vertical driver 222 by the j-th output line Vj with a relatively small load. In an alternative embodiment, the first linewidth W1 and the second linewidth W2 can be the same as each other, or the second linewidth W2 can be larger than the first linewidth W1.

[0135] exist Figure 5 In the diagram, the transmission transistor T_TX, the first transistor T1, and the second transistor T2 are shown as P-type transistors, but at least some of the transmission transistor T_TX, the first transistor T1, and the second transistor T2 can be N-type transistors, allowing the circuit structure of the sensor pixel SPXL to be modified differently.

[0136] Return to reference Figure 4 The vertical driver 222 may include an integrating circuit.

[0137] The integrating circuit can be connected to the output lines Vj-1, Vj, and Vj+1 via the input terminals OTj-1, OTj, and OTj+1, respectively, and can generate output signals VOUTj-1, VOUTj, and VOUTj+1, respectively. Since the integrating circuits are essentially equivalent to each other, the integrating circuit connected to the j-th output line Vj, as a representative integrating circuit, will be described.

[0138] The integrating circuit (or vertical driver 222) may include an amplifier AMP, a capacitor CF, and a switch SW. The first input terminal of the amplifier AMP (e.g., a positive (+) input terminal) can be connected to the j-th output line Vj via the j-th input terminal OTj, and a reference voltage VREF can be applied to the second input terminal of the amplifier AMP (e.g., a negative (-) input terminal).

[0139] Capacitor CF can be connected between the first input terminal and the output terminal of amplifier AMP, and switch SW can be connected in parallel to capacitor CF.

[0140] When the switch SW is open, the capacitor CF can integrate the charge (e.g., the sensing signal) supplied to the first input terminal of the amplifier AMP, and the amplifier AMP can output the sensing signal integrated through the output terminal, in other words, the j-th output signal VOUTj.

[0141] When switch SW is turned on, capacitor CF can be initialized.

[0142] For reference Figure 4 and Figure 5 As described, the sensor pixel SPXL includes a first transistor T1 and a second transistor T2 connected between sub-lines RX_S1 and RX_S2 of the j-th signal line RXj. Both noise flowing through the j-th signal line RXj and noise (or leakage current) flowing from the optical sensor PSC can be reduced or blocked by using the first transistor T1 and the second transistor T2. Therefore, the sensing sensitivity of the input sensing device ISD can be improved.

[0143] According to exemplary embodiments of the present invention, such as Figure 4 and Figure 5 As shown, the input sensing device ISD includes a power line PL1, a drive line Hi, a first signal line RXj including sub-lines RX_S1 and RX_S2, a second signal line Vj connected to the sub-lines RX_S1 and RX_S2, and a sensor pixel SPXL connected to the power line PL1, the drive line Hi, and the second signal line Vj. At least one sensor pixel SPXL includes an optical sensor PSC, a first transistor T1, and a second transistor T2. The optical sensor PSC transmits photoelectrically converted charge from the power line PL1 to a first node N1 in response to a drive signal provided by the i-th drive line Hi among the drive lines Hi-1, Hi, and Hi+1. The first transistor T1 is connected between the first node N1 and the first sub-line RX_S1, and includes a gate electrode connected to the i-th drive line Hi. The second transistor T2 is connected between the first node N1 and the second sub-line RX_S2, and includes a gate electrode connected to the i-th drive line Hi.

[0144] Figure 6 This describes an exemplary embodiment of the present invention. Figure 5 The waveform diagram of the operation of the sensor pixels.

[0145] Reference Figures 4 to 6 The i-th drive signal Scani can be provided to the i-th drive line Hi, and the output signal Vout can correspond to the j-th output line Vj. In other words, the output signal Vout can be the j-th output signal VOUTj output through the integrating circuit connected to the j-th output line Vj.

[0146] At the first time point t1, the i-th drive signal SCANi can change from a logic high level (or gate cutoff voltage level) to a logic low level (or gate on voltage level). At the second time point t2, the i-th drive signal SCANi can change from a logic low level to a logic high level.

[0147] In this case, the transmission transistor T_TX, the first transistor T1, and the second transistor T2 of the sensor pixel SPXL can be turned on, and the charge (or current) generated by the photodiode PD can be transmitted to the j-th output line Vj through the transmission transistor T_TX, the first node N1, the first transistor T1, the second transistor T2, and the j-th signal line RXj (or the first sub-line RX_S1 and the second sub-line RX_S2).

[0148] refer to Figure 4 The described integrator circuit can integrate the charge supplied through the j-th output line Vj, and therefore, the voltage level of the output signal Vout can be gradually increased and saturated at a certain voltage level.

[0149] When reflected light corresponding to a valley is incident on sensor pixel SPXL, the output signal Vout can vary along a first curve WF1 and can have a first voltage level Vvalley. Alternatively, when reflected light corresponding to a ridge is incident on sensor pixel SPXL, the output signal Vout can vary along a second curve WF2 and can have a second voltage level Vridge. The second voltage level Vridge can be lower than the first voltage level Vvalley.

[0150] On the other hand, when noise flows into the input sensing device ISD (or sensor array PS), the output signal Vout corresponding to the ridge may vary along a third curve WF3, different from the second curve WF2, and may have a third voltage level Vnoise. In this case, the signal-to-noise ratio may decrease (e.g., the value of "(Vvalley-Vridge) / Vnoise" may decrease), and the ridge may not be sensed correctly. For example, due to noise, the difference between the first voltage level Vvalley and the second voltage level Vridge may decrease, thereby preventing the ridge from being sensed correctly.

[0151] Therefore, the sensor pixel SPXL can reduce noise by using the first transistor T1 and the second transistor T2 connected between the first sub-line RX_S1 and the second sub-line RX_S2 of the signal lines RXj-1, RXj and RXj+1, and thus improve the sensing sensitivity (or signal-to-noise ratio) of the input sensing device ISD.

[0152] Figure 7 It is a description of Figure 5 A graph showing the noise variation caused by sensor pixels.

[0153] Reference Figure 4 , Figure 5 and Figure 7When the sensor pixel SPXL does not include the first transistor T1 and the second transistor T2, the load load of the j-th signal line RXj can be represented as 100%. For example, the noise level flowing through the j-th signal line RXj with a load load of 100% can be approximately 8.5mV.

[0154] The sensor pixel SPXL can be electrically blocked on the j-th signal line RXj in the first direction DR1 by at least one of the first transistor T1 and the second transistor T2, and therefore, the level of noise NOISE flowing through the j-th signal line RXj can be reduced. For example, the sensor pixel SPXL can be electrically blocked by the first transistor T1 or the second transistor T2, or by both the first transistor T1 and the second transistor T2.

[0155] For reference Figure 4 and Figure 5 As described, when each sensor pixel SPXL includes a first transistor T1 and a second transistor T2, as well as the j-th output line Vj, the load LOAD of the j-th signal line RXj can be reduced to about 50% or less, and in this case, the level of noise NOISE flowing through the j-th signal line RXj can be reduced. For example, the level of noise NOISE can be reduced to about 5mV or lower.

[0156] Figure 8 It is shown Figure 3 A circuit diagram of another exemplary embodiment of the input sensing device.

[0157] Reference Figure 3 , Figure 4 , Figure 5 and Figure 8 , Figure 8 The input sensing device ISD_1 (or sensor array PS_1) and Figure 4 The difference between an input sensing device ISD (or sensor array PS) and an input sensing device SPXL is that at least one sensor pixel SPXL includes only one of the first transistor T1 and the second transistor T2.

[0158] like Figure 8 As shown, the first sensor pixel SPXL1, which is connected to the j-th output line Vj and is furthest from the vertical driver 222, may include a reference. Figure 5 The second transistor T2 is described, and the first transistor T1 may not be included.

[0159] Furthermore, the nth sensor pixel SPXLn, connected to the j-th output line Vj and closest to the vertical driver 222, may include a reference. Figure 5 The first transistor T1 is described, and the second transistor T2 may not be included.

[0160] Any sensor pixel connected to the j-th output line Vj and positioned between the first sensor pixel SPXL1 and the n-th sensor pixel SPXLn can include, as referenced Figure 4 and Figure 5 The first transistor T1 and the second transistor T2 are described. Furthermore, as referenced... Figure 4 and Figure 5 As described, any sensor pixel connected to the j-th output line Vj and positioned between the first sensor pixel SPXL1 and the n-th sensor pixel SPXLn can include only one of the first transistor T1 and the second transistor T2.

[0161] For reference Figure 8 As described, the input sensing device ISD_1 may include at least one sensor pixel (e.g., a first sensor pixel SPXL1 and / or an nth sensor pixel SPXLn), the at least one sensor pixel having a reference Figure 4 and Figure 5 The sensor pixels SPXL are described as having different pixel structures.

[0162] Figure 9A and Figure 9B It is shown Figure 3 A circuit diagram of an exemplary embodiment of a sensor array included in an input sensing device. Figure 9A and Figure 9B The image shows sensor pixels SPXLi-1, SPXLi, and SPXLi+1 included in the (i-1)th sensor pixel row to the (i+1)th sensor pixel row and the jth sensor pixel column.

[0163] Reference Figure 3 , Figure 4 , Figure 9A and Figure 9B , Figure 9A and Figure 9B The sensor array PS_2 shown is Figure 4 The difference in the sensor array PS shown is that the sensor pixels SPXLi-1, SPXLi, and SPXLi+1 include either a first transistor T1 or a second transistor T2. For example, in Figure 9A In the sensor, each of the sensor pixels SPXLi-1, SPXLi, and SPXLi+1 includes only one transistor for controlling the connection between the sub-lines RX_S1, RX_S2, RX_S3, and RX_S4 of the j-th signal line RXj.

[0164] The sensor array PS_2 may include the k-th sensor pixel group G_SPXLk (where k is a positive integer less than n), and the k-th sensor pixel group G_SPXLk may include sensor pixels SPXLi-1 and SPXLi, as well as a pair of first transistors T1 and second transistors T2 included therein.

[0165] like Figure 9A As shown, the k-th sensor pixel group G_SPXLk can include the (i-1)-th sensor pixel SPXLi-1 and the i-th sensor pixel SPXLi. In other words, the k-th sensor pixel group G_SPXLk can include two sensor pixels.

[0166] The (i-1)th sensor pixel SPXLi-1 (or an odd-numbered sensor pixel) may include the (i-1)th optical sensor PSCi-1 and the first transistor T1, but may not include the second transistor T2.

[0167] The (i-1)th optical sensor PSCi-1 can be connected to power line PL1, the (i-1)th drive line Hi-1, and the second sub-line RX_S2. Since the (i-1)th optical sensor PSCi-1 is essentially equivalent to the reference... Figure 5 The optical sensor PSC is described (except that it is connected to the second sub-line RX_S2 instead of the first node N1), so redundant descriptions will not be repeated. The first sub-line RX_S1, the second sub-line RX_S2, the third sub-line RX_S3, and the fourth sub-line RX_S4 can be included in the j-th signal line RXj.

[0168] The first transistor T1 of the (i-1)th sensor pixel SPXLi-1 may include a first electrode connected to the first sub-line RX_S1, a second electrode connected to the second sub-line RX_S2 (or the second electrode of the transmission transistor T_TX in the (i-1)th optical sensor PSCi-1), and a gate electrode connected to the (i-1)th drive line Hi-1.

[0169] The i-th sensor pixel SPXLi (or an even-numbered sensor pixel) may include the i-th optical sensor PSCi and the second transistor T2, but may not include the first transistor T1.

[0170] The i-th optical sensor PSCi can be connected to the power line PL1, the i-th drive line Hi, and the second sub-line RX_S2. The i-th optical sensor PSCi can be substantially equivalent to the (i-1)-th optical sensor PSCi-1. The i-th optical sensor PSCi (or the i-th sensor pixel SPXLi) and the (i-1)-th optical sensor PSCi-1 (or the (i-1)-th sensor pixel SPXLi-1) can be directly connected to each other via the second sub-line RX_S2. In this case, a separate transistor for connecting or disconnecting the i-th optical sensor PSCi and the (i-1)-th optical sensor PSCi-1 is not required.

[0171] The second transistor T2 of the i-th sensor pixel SPXLi may include a first electrode connected to the second sub-line RX_S2 (or the second electrode of the transmission transistor T_TX in the i-th optical sensor PSCi), a second electrode connected to the third sub-line RX_S3, and a gate electrode connected to the i-th drive line Hi.

[0172] The j-th output line Vj can be connected to the first sub-line RX_S1 and the third sub-line RX_S3, but it does not have to be directly connected to the second sub-line RX_S2 and the fourth sub-line RX_S4.

[0173] In other words, a first transistor T1 and a second transistor T2 can be provided for each sensor pixel group (e.g., each sensor pixel group including two sensor pixels) to perform the noise prevention function of the j-th signal line RXj, instead of referencing... Figure 5 The description provides a first transistor T1 and a second transistor T2 for each sensor pixel SPXL.

[0174] In this case, the number of transistors in the sensor array PS_2 (or input sensing device) can be reduced.

[0175] Similar to the (i-1)th sensor pixel SPXLi-1, the (i+1)th sensor pixel SPXLi+1 may be included in a different sensor pixel group than the kth sensor pixel group G_SPXLk, and may include the (i+1)th optical sensor PSCi+1 and the first transistor T1 connected between the third sub-line RX_S3 and the fourth sub-line RX_S4.

[0176] For reference Figure 9AThe described sensor pixel group (or each in the sensor pixel group) comprising multiple sensor pixels may include a pair of first transistors T1 and second transistors T2. Therefore, the number of first transistors T1 and second transistors T2 disposed in the sensor array PS_2 can be reduced, and thus manufacturing costs can be reduced. Furthermore, the integration density of the sensor pixels can be increased.

[0177] exist Figure 9A The diagram shows that the (i-1)th sensor pixel SPXLi-1 (or the (i-1)th optical sensor PSCi-1) and the ith sensor pixel SPXLi (or the ith optical sensor PSCi) in the k-th sensor pixel group G_SPXLk are electrically connected via a second sub-line RX_S2. However, the configuration of the k-th sensor pixel group G_SPXLk is not limited to this. For example, as shown... Figure 9B As shown, the j-th signal line RXj may only include the first sub-line RX_S1 and the third sub-line RX_S3 (e.g., odd-numbered sub-lines), and may not include the second sub-line RX_S2 and the fourth sub-line RX_S4 (e.g., even-numbered sub-lines or sub-lines not directly connected to the j-th output line Vj). Therefore, the (i-1)-th sensor pixel SPXLi-1 and the i-th sensor pixel SPXLi in the k-th sensor pixel group G_SPXLk may not be directly connected to each other.

[0178] Figure 10 It is shown Figure 1A A block diagram of another exemplary embodiment of an input sensing device included in a display device. The input sensing device ISD_2 may include a sensor array PS_3 and an input detector 220.

[0179] Reference Figure 1A , Figure 3 and Figure 10 , Figure 10 Input sensing device ISD_2 and Figure 3 The difference between the input sensing device ISD and the other one is that it includes a sensor array PS_3, a horizontal driver 221_1, and group drive lines GH1 to GHp (here, p is a positive integer less than n). Since, in addition to the sensor array PS_3, the horizontal driver 221_1, and the group drive lines GH1 to GHp, Figure 10 The input sensing device ISD_2 is essentially equivalent to or similar to Figure 3 The input sensing device ISD will not be described redundantly.

[0180] The sensor array PS_3 may include sensor pixel group G_SPXL_1 (or multiple sensor pixel groups), and the sensor pixel group G_SPXL_1 may include multiple sensor pixels SPXL1_1 to SPXLq_1 (here, q is an integer of 2 or greater).

[0181] Please refer to later Figure 11 Describe the specific configuration of sensor pixels SPXL1_1 to SPXLq_1 in sensor pixel group G_SPXL_1.

[0182] The horizontal driver 221_1 can be connected to the sensor pixel group G_SPXL_1 via group drive lines GH1 to GHp (or a second drive line). The horizontal driver 221_1 may consist of a shift register, an address decoder, etc., and can sequentially apply group drive signals (or multiple group drive signals or a first drive signal) to the group drive lines GH1 to GHp. Here, the group drive signals can be signals used to selectively drive the sensor pixel group G_SPXL_1. The sensor pixels SPXL1_1 to SPXLq_1 included in the sensor pixel group G_SPXL_1 can receive the same group drive signals.

[0183] Furthermore, the horizontal driver 221_1 can be connected to sensor pixels SPXL1_1 to SPXLq_1 via drive lines H1 to Hn (or a first drive line). The horizontal driver 221_1 can sequentially apply drive signals (or multiple drive signals or a second drive signal) to drive lines H1 to Hn.

[0184] Each of the sensor pixels SPXL1_1 to SPXLq_1 selected by the group drive signal and drive signal provided by the horizontal driver 221_1 can sense light by using the photoelectric element therein, and can output an electrical signal corresponding to the sensed light.

[0185] Figure 11 It is shown Figure 10 A circuit diagram of an exemplary embodiment of a sensor array included in an input sensing device. Figure 11 The diagram shows sensor pixels SPXLi-1_1, SPXLi_1, and SPXLi+1_1 that are included in the k-th sensor pixel group G_SPXLk_1 (where k is a positive integer) and in the (i-1)-th to (i+1)-th sensor pixel rows and the j-th sensor pixel column.

[0186] Reference Figure 11The k-th sensor pixel group G_SPXLk_1 may include the (i-1)-th sensor pixel SPXLi-1_1, the ith sensor pixel SPXLi_1, and the (i+1)-th sensor pixel SPXLi+1_1. In other words, the k-th sensor pixel group G_SPXLk_1 may include three sensor pixels SPXLi-1_1, SPXLi_1, and SPXLi+1_1. However, this is just an example, and the number of sensor pixels included in the k-th sensor pixel group G_SPXLk_1 is not limited to this. For example, the number of sensor pixels included in the k-th sensor pixel group G_SPXLk_1 may be two, four, or more.

[0187] The (i-1)th sensor pixel SPXLi-1_1 may include the (i-1)th optical sensor PSCi-1 and the first transistor T1.

[0188] The (i-1)th optical sensor PSCi-1 can be connected to the power line PL1, the (i-1)th drive line Hi-1, and the second sub-line RX_S2_1, and can be driven in response to the drive signal provided through the (i-1)th drive line Hi-1. Since the (i-1)th optical sensor PSCi-1 is essentially equivalent to the reference... Figure 9A The (i-1)th optical sensor PSCi-1 is described, so redundant descriptions will not be repeated. The first sub-line RX_S1_1, the second sub-line RX_S2_1, and the third sub-line RX_S3_1 can be included in the j-th signal line RXj.

[0189] The first transistor T1 of the (i-1)th sensor pixel SPXLi-1_1 may include a first electrode connected to the first sub-line RX_S1_1, a second electrode connected to the second sub-line RX_S2_1 (or the second electrode of the transmission transistor T_TX in the (i-1)th optical sensor PSCi-1), and a gate electrode connected to the kth group of drive lines GHk.

[0190] The i-th sensor pixel SPXLi_1 may include the i-th optical sensor PSCi, but may not include the first transistor T1 and the second transistor T2.

[0191] The i-th optical sensor PSCi can be connected to the power line PL1, the i-th drive line Hi, and the second sub-line RX_S2_1, and can be driven in response to the drive signal provided through the i-th drive line Hi. The i-th optical sensor PSCi can be substantially equivalent to the (i-1)-th optical sensor PSCi-1. Since the i-th sensor pixel SPXLi_1 does not include the first transistor T1 and the second transistor T2, the transmission transistor T_TX in the i-th optical sensor PSCi can be directly connected to the second sub-line RX_S2_1 and directly connected to the transmission transistor T_TX of the (i-1)-th optical sensor PSCi-1 and the transmission transistor T_TX of the (i+1)-th optical sensor PSCi+1.

[0192] The (i+1)th sensor pixel SPXLi+1_1 may include the (i+1)th optical sensor PSCi+1 and the second transistor T2.

[0193] The (i+1)th optical sensor PSCi+1 can be connected to the power line PL1, the (i+1)th drive line Hi+1, and the second sub-line RX_S2_1, and can be driven in response to the drive signal provided through the (i+1)th drive line Hi+1. The (i+1)th optical sensor PSCi+1 can be substantially equivalent to or similar to the reference. Figure 9A The i-th optical sensor PSCi is described.

[0194] In this case, the (i-1)th optical sensor PSCi-1 (or the (i-1)th sensor pixel SPXLi-1_1), the i-th optical sensor PSCi (or the i-th sensor pixel SPXLi_1), and the (i+1)th optical sensor PSCi+1 (or the (i+1)th sensor pixel SPXLi+1_1) can be directly connected to each other via the second sub-line RX_S2_1, and it is not necessary to set separate transistors for connecting or disconnecting them between the (i-1)th optical sensor PSCi-1, the i-th optical sensor PSCi, and the (i+1)th optical sensor PSCi+1.

[0195] The second transistor T2 of the (i+1)th sensor pixel SPXLi+1_1 may include a first electrode connected to the second sub-line RX_S2_1 (or the second electrode of the transmission transistor T_TX in the (i+1)th optical sensor PSCi+1), a second electrode connected to the third sub-line RX_S3_1, and a gate electrode connected to the kth group of drive lines GHk.

[0196] The j-th output line Vj can be connected to the first sub-line RX_S1_1 and the third sub-line RX_S3_1, but it does not need to be directly connected to the second sub-line RX_S2_1.

[0197] In this case, a first transistor T1 and a second transistor T2 can be provided for each sensor pixel group (e.g., a sensor pixel group including three sensor pixels) to perform a noise prevention function for the j-th signal line RXj.

[0198] You can refer to this. Figure 12 Describe the operation of the k-th sensor pixel group G_SPXLk_1 and each of the (i-1)-th sensor pixel SPXLi-1_1, the ith sensor pixel SPXLi_1, and the (i+1)-th sensor pixel SPXLi+1_1 included therein.

[0199] Figure 12 This describes an exemplary embodiment of the present invention. Figure 11 The waveform diagram of the operation of the sensor array.

[0200] Reference Figure 11 and Figure 12 It can provide a group drive signal GSCAN (or a first drive signal) to the k-th group drive line GHk (or the first drive line), can provide an i-1 drive signal Scani-1 (or a second drive signal) to the (i-1)-th drive line Hi-1, can provide an i-th drive signal Scani to the i-th drive line Hi, and can provide an i+1 drive signal Scani+1 to the (i+1)-th drive line Hi+1.

[0201] During the first cycle P1, the second cycle P2, and the third cycle P3, the group drive signal GSCAN can be at a logic low level (or a gate on voltage level). During the cycles other than the first cycle P1 to the third cycle P3, the group drive signal GSCAN can be at a logic high level (or a gate off voltage level).

[0202] When a logic-high group drive signal GSCAN is provided to the k-th group drive line GHk (or when the group drive signal GSCAN is not provided to the k-th group drive line GHk), the first transistor T1 and the second transistor T2 in the k-th sensor pixel group G_SPXLk_1 can remain in the off state, and the first transistor T1 and the second transistor T2 can electrically decouple the (i-1)-th sensor pixel SPXLi-1_1, the i-th sensor pixel SPXLi_1, and the (i+1)-th sensor pixel SPXLi+1_1 (and the second sub-line RX_S2_1) from the first sub-line RX_S1_1 and the third sub-line RX_S3_1 (and the j-th output line Vj). Specifically, the first sub-line RX_S1_1, the second sub-line RX_S2_1, and the third sub-line RX_S3_1 can be electrically decoupled from each other, and thus the possibility and magnitude of noise flowing through the j-th signal line RXj can be reduced.

[0203] When the logic-low group drive signal GSCAN is provided to the k-th group drive line GHk, the first transistor T1 and the second transistor T2 in the k-th sensor pixel group G_SPXLk_1 can be turned on, and the (i-1)-th sensor pixel SPXLi-1_1, the ith sensor pixel SPXLi_1, and the (i+1)-th sensor pixel SPXLi+1_1 can be electrically connected to the j-th output line Vj through the second sub-line RX_S2_1. In this case, the other sensor pixel groups (and their corresponding sub-lines) besides the k-th sensor pixel group G_SPXLk_1 can remain electrically disconnected from the j-th output line Vj.

[0204] In the first cycle P1, the (i-1)th drive signal SCANi-1 can have a logic low level, and as referenced Figure 6 As described, the charge (or sensing signal) from the photoelectric conversion of the (i-1)th sensor pixel SPXLi-1_1 (or the (i-1)th optical sensor PSCi-1) can be transmitted to the j-th output line Vj through the second sub-line RX_S2_1, the first transistor T1 and the second transistor T2, as well as the first sub-line RX_S1_1 and the third sub-line RX_S3_1.

[0205] Similarly, in the second cycle P2, after the first cycle P1, the i-th drive signal SCANi can have a logic low level, and the charge from the photoelectric conversion of the i-th sensor pixel SPXLi_1 (or the i-th optical sensor PSCi) can be transmitted to the j-th output line Vj through the second sub-line RX_S2_1, the first transistor T1 and the second transistor T2, as well as the first sub-line RX_S1_1 and the third sub-line RX_S3_1.

[0206] In the third cycle P3 following the first cycle P1 and the second cycle P2, the i+1th drive signal SCANi+1 can have a logic low level, and the charge from the photoelectric conversion of the i+1th sensor pixel SPXLi+1_1 (or the i+1th optical sensor PSCi+1) can be transferred to the jth output line Vj.

[0207] For reference Figure 11 and Figure 12 The sensor pixel group described herein, comprising multiple sensor pixels, may include a pair of first transistors T1 and second transistors T2. Therefore, the number of first transistors T1 and second transistors T2 disposed in the sensor array PS_3 can be reduced, and thus manufacturing costs can be reduced, or the integration density of the sensor pixels can be increased.

[0208] Furthermore, when the k-th sensor pixel group G_SPXLk_1 includes two sensor pixels, the i-th sensor pixel SPXLi_1 can be omitted from the k-th sensor pixel group G_SPXLk_1. In other words, the k-th sensor pixel group G_SPXLk_1 can include only the two sensor pixels corresponding to the (i-1)-th sensor pixel SPXLi-1_1 and the (i+1)-th sensor pixel SPXLi+1_1.

[0209] Alternatively, when the k-th sensor pixel group G_SPXLk_1 includes four or more sensor pixels, multiple i-th sensor pixels SPXLi_1 can be set in the k-th sensor pixel group G_SPXLk_1. In other words, the k-th sensor pixel group G_SPXLk_1 can include two or more sensor pixels that are substantially equivalent to the i-th sensor pixel SPXLi_1 between the (i-1)-th sensor pixel SPXLi-1_1 and the (i+1)-th sensor pixel SPXLi+1_1.

[0210] An input sensing device and a display device including the input sensing device according to an exemplary embodiment of the present invention can reduce or prevent noise and leakage current flowing through the first signal line by including a first transistor and a second transistor connected between the sub-line (or the first signal line) to which the optical sensor is connected. Therefore, the sensing sensitivity of the input sensing device and the display device including the input sensing device can be improved.

[0211] Although the invention has been described with reference to exemplary embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as set forth in the appended claims.

Claims

1. An input sensing device, including: Power lines; drive line; The first signal line, including sub-lines; The second signal line is connected to the sub-line; as well as The sensor pixels are connected to the power line, the drive line, and the first signal line. Wherein, at least one of the sensor pixels includes: An optical sensor, in response to a drive signal provided via a first drive line in the drive line, transfers photoelectric converted charge from the electric field line to a first node; A first transistor is connected between the first node and a first sub-line in the sub-line, wherein the first transistor includes a gate electrode connected to the first drive line; and A second transistor is connected between the first node and the second sub-line in the sub-line, wherein the second transistor includes a gate electrode connected to the first drive line.

2. The input sensing device according to claim 1, wherein, The optical sensor includes: A photodiode, connected between the power line and the first node; and A transmission transistor is connected between the photodiode and the first node, wherein the transmission transistor includes a gate electrode connected to the first drive line.

3. The input sensing device according to claim 1, wherein, The sub-lines, which are connected to at least some of the sensor pixels and are arranged in the same column, extend in a first direction and are arranged along the first direction. Wherein, the second signal line is arranged parallel to the first signal line, and Each of the drive lines extends in a second direction intersecting the first direction, and the drive lines connected to at least some of the sensor pixels arranged in the same column are arranged along the first direction.

4. The input sensing device according to claim 3, wherein, The second signal line is connected to each of the first sub-line and the second sub-line.

5. The input sensing device according to claim 3, wherein, The width of the second signal line is greater than the width of the first signal line.

6. The input sensing device according to claim 1, further comprising: A first driver is connected to the drive line, wherein the first driver sequentially provides the drive signals to the drive line; and The second driver is connected to the second signal line.

7. The input sensing device according to claim 6, wherein, The sensor pixel furthest from the second driver includes an optical sensor and a single transistor directly connected to the first signal line.

8. The input sensing device according to claim 6, wherein, The sensor pixel closest to the second driver includes an optical sensor and a single transistor directly connected to the first signal line.

9. An input sensing device, including: Power lines; drive line; The first signal line includes a first sub-line, a second sub-line, and a third sub-line; The second signal line is connected to the first sub-line and the third sub-line of the first signal line; as well as The sensor pixel group is connected to the power line, the drive line, and the first signal line. Wherein, at least one sensor pixel group in the sensor pixel group includes: A first optical sensor is configured to transfer photoelectrically converted charge from the electric field line to the second sub-line in response to a drive signal provided by the first drive line in the drive line; A second optical sensor, in response to a drive signal provided via a second drive line in the drive line, transfers photoelectrically converted charge from the electric field line to the second sub-line; and A first transistor is connected between the first sub-line and the second sub-line, wherein the first transistor includes a gate electrode connected to the first drive line.

10. The input sensing device according to claim 9, wherein, The at least one sensor pixel group further includes: A second transistor is connected between the third sub-line and the second sub-line, wherein the second transistor includes a gate electrode connected to the second drive line.

Images