Semiconductor devices, light-emitting devices, display devices, photoelectric converters, electronic devices, lighting devices, mobile devices, and wearable devices
The semiconductor device design with a chamfered light-transmitting substrate and reinforcing member addresses the issue of reduced bonding strength in miniaturized chips, enhancing reliability and enabling miniaturization.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- CANON KK
- Filing Date
- 2022-04-26
- Publication Date
- 2026-06-19
Smart Images
Figure 0007876330000001 
Figure 0007876330000002 
Figure 0007876330000003
Abstract
Description
Technical Field
[0001] The present invention relates to a semiconductor device, a light-emitting device, a display device, a photoelectric conversion device, an electronic device, a lighting device, a moving body, and a wearable device.
Background Art
[0002] Patent Document 1 discloses a semiconductor device including a semiconductor chip on which an optical element is formed, and a transparent member fixed on the semiconductor chip with a transparent adhesive so as to cover the optical element.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] In order to miniaturize a semiconductor chip, it is required to narrow a peripheral region provided on an outer edge side of an element region in which an optical element region is arranged. When the peripheral region is narrowed, the bonding area between a terminal provided in the peripheral region and a wiring board on which an electrode connected to the terminal is arranged is reduced, so that the bonding strength between the semiconductor chip and the wiring board is lowered, and the reliability of the semiconductor device may be lowered.
[0005] An object of the present invention is to provide a technique advantageous for improving the reliability of a semiconductor device.
Means for Solving the Problems
[0006] In view of the above problems, a semiconductor device according to an embodiment of the present invention includes: an element substrate having a first surface provided with an element region on which optical elements are arranged and a peripheral region on which external connection terminals are arranged; a light-transmitting substrate having a second surface bonded to the first surface via a bonding member so as to cover the element region; a wiring substrate having a third surface on which electrodes connected to the external connection terminals are provided; and a reinforcing member for reinforcing the bonding strength between the element substrate and the wiring substrate, wherein the external connection terminals are arranged along the first edge of the first surface, the side of the light-transmitting substrate perpendicular to the second surface includes a fourth surface arranged along the first edge, a fifth surface is provided between the second surface and the fourth surface, which is chamfered so as to be an obtuse angle with respect to the second surface, the bonding member abuts against the fifth surface, and the reinforcing member abuts against the sixth surface of the wiring substrate opposite to the third surface, the peripheral region, and the fourth surface. Furthermore, the second surface is in contact only with the connecting member. It is characterized by the following: [Effects of the Invention]
[0007] According to the present invention, it is possible to provide a technology that is advantageous for improving the reliability of semiconductor devices. [Brief explanation of the drawing]
[0008] [Figure 1] A top view and a cross-sectional view showing an example of the configuration of a semiconductor device according to this embodiment. [Figure 2] A cross-sectional view showing a modified example of the semiconductor device in Figure 1. [Figure 3] A cross-sectional view showing a modified example of the semiconductor device in Figure 1. [Figure 4] A cross-sectional view showing a modified example of the semiconductor device in Figure 1. [Figure 5] Top view and cross-sectional view showing an example of the configuration of a semiconductor device according to this embodiment. [Figure 6] A figure showing an example of a display device using the semiconductor device of this embodiment. [Figure 7] A diagram showing an example of a photoelectric conversion device using the semiconductor device of this embodiment. [Figure 8] A diagram showing an example of an electronic device using the semiconductor device of this embodiment. [Figure 9] A figure showing an example of a display device using the semiconductor device of this embodiment. [Figure 10] A diagram showing an example of a lighting device using the semiconductor device of this embodiment. [Figure 11] A diagram showing an example of a mobile device using the semiconductor device of this embodiment. [Figure 12] A figure showing an example of a wearable device using the semiconductor device of this embodiment. [Modes for carrying out the invention]
[0009] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention as defined in the claims. While the embodiments describe multiple features, not all of these features are essential to the invention, and the features may be combined in any way. Furthermore, in the attached drawings, identical or similar configurations are given the same reference numerals, and redundant descriptions are omitted.
[0010] A semiconductor device according to an embodiment of the present disclosure will be described with reference to Figures 1(a), 1(b) to 5(a) to 5(c). Figure 1(a) is a top view showing an example configuration of the semiconductor device 900 in this embodiment, and Figure 1(b) is a cross-sectional view between A and A' shown in Figure 1(a).
[0011] The semiconductor device 900 in this embodiment includes an element substrate 100, a light-transmitting substrate 200, a wiring substrate 300, and a reinforcing member 600. The element substrate 100 has a surface 111 on which an element region 102 on which optical elements are arranged and a peripheral region 103 on which external connection terminals 101 are arranged. Surface 111 may also be called the main surface of the element substrate 100. The element substrate 100 may be made of a semiconductor substrate such as silicon, or a glass substrate or resin substrate on which a semiconductor layer is arranged. An element region 102 on which optical elements are arranged is formed on such a substrate. In the configuration shown in Figures 1(a) and 1(b), the external connection terminals 101 are arranged along the edge 104 of surface 111. However, it is not limited to this, and external connection terminals 101 may also be arranged on other edges. In that case, the components described below, such as the light-transmitting substrate 200, the wiring substrate 300, and the reinforcing member 600, can also be arranged similarly on sides other than the side 104 of the surface 111 of the element substrate 100.
[0012] The light-transmitting substrate 200 is positioned opposite the element substrate 100. The surface 212 of the light-transmitting substrate 200 is bonded to the surface 111 of the element substrate 100 via a bonding member 500, so as to cover the element region 102. Surface 212 may also be called the main surface of the light-transmitting substrate 200. A translucent substrate such as glass or resin may be used for the light-transmitting substrate 200. The side surface of the light-transmitting substrate 200 perpendicular to surface 212 includes a surface 214 positioned along the edge 104 of the element substrate 100. Furthermore, a chamfered surface 215 is positioned between surface 212 and surface 214 of the light-transmitting substrate 200 such that the angle with respect to surface 212 is an obtuse angle θ1. As shown in Figure 1(b), the outer edge of surface 212 of the light-transmitting substrate 200 may be chamfered around its entire circumference.
[0013] By chamfering the outer edge of the surface 212 of the light-transmissive substrate 200, when transporting the light-transmissive substrate 200 in the manufacturing process of the semiconductor device 900 or the like, chipping at the ridge line of the surface 212 of the light-transmissive substrate 200 can be prevented due to contact with a transfer collet or a transfer stage. Further, by chamfering, when bonding the light-transmissive substrate 200 to the element substrate 100, generation of scratches in the element region 102 of the element substrate 100 can be suppressed. As a result, a decrease in the yield in the manufacturing process of the semiconductor device 900 can be suppressed. In FIG. 1(b), the surface 215 of the light-transmissive substrate 200 is drawn in a straight line shape, but it may be a convex shape or a concave shape.
[0014] When the optical element disposed in the element region 102 of the element substrate 100 includes a photoelectric conversion element, the bonding member 500 for bonding the element substrate 100 and the light-transmissive substrate 200 can be a resin member such as an epoxy resin or an acrylic resin that transmits light to which the photoelectric conversion element is sensitive. Further, when the optical element disposed in the element region 102 of the element substrate 100 includes a light-emitting element, the bonding member 500 can be a resin member such as an epoxy resin or an acrylic resin that transmits light emitted by the light-emitting element. The bonding member 500 is arranged so as not to protrude beyond the external connection terminal 101 of the element substrate 100 and abuts on the surface 215 where the surface 212 of the light-transmissive substrate 200 is chamfered. By providing the surface 215 where the outer edge of the surface 212 of the light-transmissive substrate 200 is chamfered, it is possible to suppress the bonding member 500 from protruding from the outer edge of the light-transmissive substrate 200. Thereby, the region assuming that the bonding member 500 protrudes in the peripheral region 103 can be reduced, and as a result, the semiconductor device 900 can be miniaturized.
[0015] In the configuration shown in FIG. 1(b), the bonding member 500 is drawn as abutting on the entire surface at the portion where the surface of the element substrate 100 and the surface 212 of the light-transmissive substrate 200 overlap, but it is not limited thereto. For example, if the element substrate 100 and the light-transmissive substrate 200 are bonded with the required strength, such as only at the four corners of the portion where the surface 111 of the element substrate 100 and the surface 212 of the light-transmissive substrate 200 overlap, the arrangement of the bonding member 500 can be set as appropriate.
[0016] The wiring board 300 has a surface 313 provided with an electrode 301 connected to the external connection terminal 101 of the element board 100. The external connection terminal 101 of the element board 100 and the electrode 301 of the wiring board 300 are connected via a joining member 800. The wiring board 300 can be, for example, a printed wiring board, and may be a board on which a wiring pattern is printed on a rigid board such as a glass epoxy board or a composite board. Also, for example, the wiring board 300 may be a flexible wiring board in which a wiring pattern is formed on a flexible film such as polyimide. Further, for example, the wiring board 300 may be a rigid-flexible wiring board which is a composite of a flexible film and a rigid board. The wiring board 300 may supply power to the element board 100 from the outside of the element board 100. Also, the wiring board 300 may input a signal from the outside of the element board 100 to the element board 100, and may output a signal from the element board 100 to the outside of the element board 100.
[0017] The joining member 800 that electrically connects the external connection terminal 101 of the element board 100 and the electrode 301 of the wiring board 300 can be a bump, an anisotropic conductive film, an anisotropic conductive paste, or the like. When a bump is used as the joining member 800, electrical joining between the external connection terminal 101 and the electrode 301 is performed by ultrasonic waves or heating and pressurization. Also, when an anisotropic conductive film or an anisotropic conductive paste is used as the joining member 800, the external connection terminal 101 and the electrode 301 are electrically joined by heating and pressurization.
[0018] The reinforcing member 600 is provided to reinforce the bonding strength between the element substrate 100 and the wiring substrate 300. The reinforcing member 600 may be made of an ultraviolet-curing adhesive or a thermosetting adhesive. The reinforcing member 600 is provided to contact the surface 316 of the wiring substrate 300 opposite to the surface 313 on which the electrodes 301 are located, the peripheral region 103 of the element substrate 100, and the surface 214 of the light-transmitting substrate 200 in order to improve the bonding strength between the element substrate 100 and the wiring substrate 300. By having the reinforcing member 600 contact not only the element substrate 100 and the wiring substrate 300 but also the light-transmitting substrate 200, the bonding strength between the element substrate 100, the light-transmitting substrate 200, and the wiring substrate 300 is increased, making it possible to improve the reliability of the semiconductor device 900.
[0019] Furthermore, in the configuration shown in Figure 1(b), the coupling member 500 abuts against a portion of the surface 215 of the light-transmitting substrate 200, and the reinforcing member 600 further abuts against the portion of the surface 215 of the light-transmitting substrate 200 that is not covered by the coupling member 500. This increases the bonding strength between the element substrate 100, the light-transmitting substrate 200, and the wiring substrate 300. In this case, as shown in Figure 1(b), the reinforcing member 600 may also abut against the coupling member 500. Alternatively, as shown in Figure 1(b), the reinforcing member 600 may also abut against the joining member 800. By continuously covering the wiring substrate 300, the joining member 800, the element substrate 100, the coupling member 500, and the light-transmitting substrate 200 with the reinforcing member 600, the bonding strength between the element substrate 100, the light-transmitting substrate 200, and the wiring substrate 300 can be increased. However, this is not the only option; the reinforcing member 600 does not need to be in contact with the connecting member 500, nor does it need to be in contact with the joining member 800. Also, in the configurations shown in Figures 1(a) and 1(b), the reinforcing member 600 is located only on the edge 104 of the element substrate 100 to which the wiring board 300 is connected, but it is not a problem if it is located on other edges as long as it does not extend beyond the outer circumference of the element substrate 100.
[0020] As explained above, the reinforcing member 600, which reinforces the bonding strength between the element substrate 100 and the wiring substrate 300, abuts against the side surface 214 of the light-transmitting substrate 200. Furthermore, as described above, the reinforcing member 600 also abuts against the portion of the surface 215 of the light-transmitting substrate 200 that is not covered by the bonding member 500. As a result, even if the peripheral region 103 of the element substrate 100 is narrowed and the bonding area between the element substrate 100 and the wiring substrate 300 is reduced, the bonding strength between the element substrate 100, the light-transmitting substrate 200, and the wiring substrate 300 can be increased. In other words, it is possible to achieve both miniaturization and high reliability of the semiconductor device 900.
[0021] Next, a modified example of the cross-sectional view of the semiconductor device 900 shown in Figure 1(b) will be explained using Figure 2. For configurations that may be similar to those described above using Figures 1(a) and 1(b) of the semiconductor device 900, explanations will be omitted as appropriate.
[0022] In the configuration shown in Figure 2, the light-transmitting substrate 200 has a surface 217 on the side opposite to the surface 212 facing the element substrate 100, and a chamfered surface 218 is positioned between surface 214 and surface 217 such that the angle with respect to surface 217 is an obtuse angle θ2. The outer edge of surface 217 of the light-transmitting substrate 200 may be chamfered all around. In this case, the reinforcing member 600 is further in contact with surface 218 of the light-transmitting substrate 200. Also, in the configuration shown in Figure 2, the coupling member 500 covers the entire surface 215 of the light-transmitting substrate 200. In the configuration shown in Figure 1(b) above, the coupling member 500 may also cover the entire surface 215 of the light-transmitting substrate 200.
[0023] By chamfering the outer edge of surface 217 of the light-transmitting substrate 200, chipping of the edges of surface 212 of the light-transmitting substrate 200 can be prevented when the light-transmitting substrate 200 is transported during the manufacturing process of the semiconductor device 900, due to contact with the transfer collet or transfer stage. This suppresses a decrease in yield in the manufacturing process of the semiconductor device 900, such as the generation of particles caused by chipping of the light-transmitting substrate 200.
[0024] Furthermore, the reinforcing member 600 abuts against the surface 218 of the light-transmitting substrate 200. As a result, even if the peripheral region 103 of the element substrate 100 is narrowed and the bonding area between the element substrate 100 and the wiring substrate 300 is reduced, the bonding strength between the element substrate 100, the light-transmitting substrate 200, and the wiring substrate 300 can be increased. In other words, it is possible to achieve both miniaturization and high reliability of the semiconductor device 900.
[0025] In the configuration shown in Figure 2, the reinforcing member 600 is in contact with the connecting member 500 and the joining member 800, respectively. By continuously covering the wiring board 300, the joining member 800, the element board 100, the connecting member 500, and the light-transmitting board 200 with the reinforcing member 600, the bonding strength between the element board 100, the light-transmitting board 200, and the wiring board 300 can be increased. However, this is not the only option, and the reinforcing member 600 does not need to be in contact with the connecting member 500 or the joining member 800.
[0026] Figure 3 shows a modified example of the semiconductor device 900 shown in Figure 2. In the configuration shown in Figure 3, similar to the configuration shown in Figure 1(b), the bonding member 500 abuts against a portion of the surface 215 of the light-transmitting substrate 200, and the reinforcing member 600 further abuts against the portion of the surface 215 of the light-transmitting substrate 200 that is not covered by the bonding member 500. As a result, similar to the configuration shown in Figure 1(b), even if the amount of bonding member 500 filling is small and the bonding member 500 abuts against only a portion of the surface 215 of the light-transmitting substrate 200, the bonding strength to the light-transmitting substrate 200 can be improved. In the configuration shown in Figure 3, the bonding strength between the element substrate 100, the light-transmitting substrate 200, and the wiring substrate 300 can be increased, and the semiconductor device 900 can be miniaturized.
[0027] In the configuration shown in Figure 3, the reinforcing member 600 is in contact with the coupling member 500 and the joining member 800, respectively. By continuously covering the wiring board 300, the joining member 800, the element board 100, the coupling member 500, and the light-transmitting board 200 with the reinforcing member 600, the bonding strength between the element board 100, the light-transmitting board 200, and the wiring board 300 can be increased. However, the configuration is not limited to this, and the reinforcing member 600 does not need to be in contact with the coupling member 500 or the joining member 800.
[0028] Figure 4 shows a modified example of the semiconductor device 900 shown in Figure 3. In the configuration shown in Figure 4, in the orthogonal projection onto the surface 111 of the element substrate 100, the outer edge 227 of surface 217 of the light-transmitting substrate 200 is positioned outside the outer edge 222 of surface 212. This configuration makes it easier to detect, for example, foreign matter embedded in surface 215 of the light-transmitting substrate 200 during the inspection process when bonding the element substrate 100 and the light-transmitting substrate 200. Furthermore, for example, the filling state of the bonding member 500 on surfaces 212 and 215 of the light-transmitting substrate 200 can be more easily inspected from the side of surface 217 of the light-transmitting substrate 200. As a result, the reliability of the semiconductor device 900 can be improved.
[0029] Furthermore, in each configuration shown in Figures 1(a), 1(b) to 4 above, in the orthogonal projection onto the surface 111 of the element substrate 100, surfaces 215 and 218 of the light-transmitting substrate 200 are arranged so as not to overlap with the element region 102. This is to prevent any change in characteristics at the outer edge of the element region 102 due to the chamfering of the outer edge of the light-transmitting substrate 200.
[0030] The semiconductor device 900 further includes a light-transmitting member 700 and a frame member 400 disposed between the light-transmitting member 700 and the surface 217 of the light-transmitting substrate 200, and arranged to surround the outer edge of the surface 217, and can be modularized. Figures 5(a) to 5(c) show an example configuration when the light-transmitting member 700 and the frame member 400 are attached to the semiconductor device 900. The frame member 400 has a contact portion 403 that abuts against the surface 217 of the light-transmitting substrate 200. Figure 5(a) is a top view focusing on the contact portion 403 of the frame member 400, Figure 5(b) is a cross-sectional view of the semiconductor device 900 with the light-transmitting member 700 and the frame member 400 attached, and Figure 5(c) is a cross-sectional view of the section B-B' in Figure 5(a). Here, the semiconductor device 900, including the element substrate 100, light-transmitting substrate 200, wiring substrate 300, coupling member 500, and reinforcing member 600 described above using Figures 1(a), 1(b) to 4, may be referred to as the structure 910, as shown in Figures 5(b) and 5(c).
[0031] The frame member 400 can be molded from materials such as modified PPE (polyphenylene ether), liquid crystal polymer (LCP), or polyamide. The frame member 400 has an inner wall that surrounds the structure 910 to protect the structure 910 from the outside. The frame member 400 is provided with an opening 404 that matches the element region 102.
[0032] The light-transmitting member 700 can be a light-transmitting material such as glass, epoxy resin, or acrylic resin that transmits light to which the photoelectric conversion element is sensitive, if the optical element arranged in the element region 102 includes a photoelectric conversion element. Furthermore, if the optical element arranged in the element region 102 includes a light-emitting element, the light-transmitting member 700 can be a light-transmitting material such as glass, epoxy resin, or acrylic resin that transmits light emitted by the light-emitting element. The light-transmitting member 700 works in cooperation with the frame member 400 to suppress the intrusion of particles and other non-consensual elements from outside the semiconductor device 900. The light-transmitting member 700 is fixed to the frame member 400.
[0033] Next, the structure of the contact portion 403 of the frame member 400 will be explained using Figures 5(a) to 5(c). As shown in Figures 5(a) and 5(b), the frame member 400 is provided with a convex-shaped contact portion 403 around its entire circumference on the outside of the opening 404 provided in the frame member 400. The contact portion 403 is in contact with the surface 217 of the light-transmitting substrate 200. The contact portion 403 also comprises an outer edge 401 and an inner edge 402 positioned between the outer edge 401 and the opening 404 in the orthogonal projection onto the surface 111 of the element substrate 100. In the orthogonal projection onto the surface 111 of the element substrate 100, the outer edge 401 of the contact portion 403 is positioned so as to overlap with the outer edge 227 of the surface 217 of the light-transmitting substrate 200, or so as to be positioned inside the outer edge 227 of the surface 217. By making the contact portion 403 convex, the contact area of the frame member 400 with the light-transmitting substrate 200 can be reduced, and the molding die for the frame member 400 can be manufactured with high precision. As a result, it becomes possible to assemble the frame member 400 to the structure 910 with high precision.
[0034] Furthermore, as shown in Figure 5(c), the outer edge 401 of the contact portion 403 is positioned so as to overlap with the outer edge 227 of the surface 217 of the light-transmitting substrate 200, or so as to be positioned inward from the outer edge 227 of the surface 217, allowing the reinforcing member 600 to contact the surface 218 of the light-transmitting substrate 200. This increases the bonding strength between the element substrate 100, the light-transmitting substrate 200, and the wiring substrate 300, as described above. Increasing the length from the outer edge 401 of the contact portion 403 of the frame member 400 to the outer edge 227 of the surface 217 of the light-transmitting substrate 200 is advantageous in terms of the dimensional accuracy of the components of the light-transmitting substrate 200 and the frame member 400, and the assembly accuracy of the semiconductor device 900. However, increasing the length from the outer edge 401 of the contact portion 403 of the frame member 400 to the outer edge 227 of the surface 217 of the light-transmitting substrate 200 increases the size of the semiconductor device 900. Therefore, although it also depends on the size of the element region 102 of the element substrate 100, the length from the outer edge 401 of the contact portion 403 of the frame member 400 to the outer edge 227 of the surface 217 of the light-transmitting substrate 200 may be in the range of 0.0 to 1.0 mm.
[0035] As shown in Figure 1(b), even if the outer edge of the surface 217 of the light-transmitting substrate 200 is not chamfered, the frame member 400 and the light-transmitting member 700 can still be placed on the surface 217 of the light-transmitting substrate 200. In that case as well, the outer edge 401 of the contact portion 403 of the frame member 400 can be positioned so as to overlap the outer edge 227 of the surface 217 of the light-transmitting substrate 200, or so as to be positioned inward from the outer edge 227 of the surface 217.
[0036] As explained above, the outer edge 401 of the contact portion 403 of the frame member 400 is positioned at the same location as the outer edge 227 of the surface 217 of the light-transmitting substrate 200, or inward from the outer edge 227. As a result, the reinforcing member 600 is not positioned between the light-transmitting substrate 200 and the contact portion 403. This improves the positional accuracy when assembling the frame member 400 to the structure 910. Consequently, when the frame member 400 and the light-transmitting member 700 are assembled to the structure 910, the reinforcing member 600 prevents the frame member 400 and the light-transmitting member 700 from tilting from a predetermined angle, thereby reducing the yield of the semiconductor device 900.
[0037] The terms used herein are used solely for the purpose of describing the present invention and may include their equivalents; the present invention is not limited to the strict meaning of such terms.
[0038] The embodiments described above are merely examples of how the present invention can be implemented, and the technical scope of the present invention should not be interpreted as being limited by them. In other words, the present invention can be implemented in various ways without departing from its technical concept or its main features.
[0039] Here, a light-emitting element such as an organic electroluminescent (EL) element is arranged as an optical element in the element region 102, and application examples of the semiconductor device 900 of this embodiment, which functions as a light-emitting device, applied to display devices, photoelectric converters, electronic devices, lighting devices, mobile devices, and wearable devices will be explained using Figures 6 to 12(a) and 12(b). First, the details and modified versions of each configuration of the semiconductor device 900 that functions as a light-emitting device will be shown, and then the application examples will be explained. Each of the optical elements arranged in the element region 102 may also be called a pixel.
[0040] Structure of an organic light-emitting device An organic light-emitting element is provided on a substrate by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode. A protective layer, a color filter, a microlens, etc., may be provided on the cathode. If a color filter is provided, a planarization layer may be provided between it and the protective layer. The planarization layer can be made of acrylic resin or the like. The same applies when a planarization layer is provided between the color filter and the microlens.
[0041] substrate Examples of substrates include quartz, glass, silicon wafers, resins, and metals. The substrate may also be equipped with switching elements such as transistors and wiring, and an insulating layer may be provided on top of them. The insulating layer can be made of any material that allows for the formation of contact holes between it and the first electrode, while ensuring insulation from wiring that is not connected. For example, resins such as polyimide, silicon oxide, and silicon nitride can be used.
[0042] electrode A pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with the higher potential is the anode, and the other is the cathode. Alternatively, the electrode that supplies holes to the light-emitting layer can be the anode, and the electrode that supplies electrons can be the cathode.
[0043] For the anode, materials with the largest possible work function are preferable. For example, elemental metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, or mixtures containing these, or alloys combining them, as well as metal oxides such as tin oxide, zinc oxide, indium oxide, tin-indium oxide (ITO), and zinc-indium oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.
[0044] These electrode materials may be used individually or in combination of two or more types. Furthermore, the anode may consist of a single layer or multiple layers.
[0045] When used as a reflective electrode, materials such as chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys or laminates thereof can be used. It is also possible to use the above materials as a reflective film without serving as an electrode. Furthermore, when used as a transparent electrode, oxide transparent conductive layers such as indium tin oxide (ITO) or indium zinc oxide can be used, but are not limited to these. Photolithography can be used to form the electrodes.
[0046] On the other hand, materials with a small work function are preferred for the cathode. Examples include alkali metals such as lithium, alkaline earth metals such as calcium, and elemental metals or mixtures containing aluminum, titanium, manganese, silver, lead, and chromium. Alternatively, alloys combining these elemental metals can also be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials may be used individually or in combination of two or more. The cathode may also be a single-layer or multi-layer structure. Among these, silver is preferred, and a silver alloy is even more preferred to reduce silver aggregation. The alloy ratio is not important as long as silver aggregation is reduced. For example, the ratio of silver to other metals may be 1:1, 3:1, etc.
[0047] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but using DC and AC sputtering methods is more preferable because it provides good film coverage and makes it easier to reduce resistance.
[0048] organic compound layer The organic compound layer may be formed as a single layer or as multiple layers. If there are multiple layers, they may be called a hole injection layer, a hole transport layer, an electron blocking layer, an emissive layer, a hole blocking layer, an electron transport layer, or an electron injection layer, depending on their function. The organic compound layer is mainly composed of organic compounds, but may also contain inorganic atoms and inorganic compounds. For example, it may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be placed between the first electrode and the second electrode, or it may be placed in contact with the first electrode and the second electrode.
[0049] protective layer A protective layer may be provided on the cathode. For example, by bonding glass with a desiccant to the cathode, the intrusion of water and other substances into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water and other substances into the organic compound layer. For example, after forming the cathode, it may be transported to another chamber without breaking the vacuum and a silicon nitride film with a thickness of 2 μm may be formed by the CVD method to serve as a protective layer. A protective layer may also be provided using atomic deposition (ALD) after the film formation by the CVD method. The material of the film formed by the ALD method is not limited, but may be silicon nitride, silicon oxide, aluminum oxide, etc. Silicon nitride may be further formed on the film formed by the ALD method by the CVD method. The film formed by the ALD method may have a thinner film thickness than the film formed by the CVD method. Specifically, it may be 50% or less, or even 10% or less.
[0050] Color filter A color filter may be provided on top of the protective layer. For example, a color filter that takes into account the size of the organic light-emitting element may be provided on a separate substrate and bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer as described above using photolithography technology. The color filter may be made of polymer.
[0051] planarization layer A planarizing layer may be provided between the color filter and the protective layer. The planarizing layer is provided to reduce the unevenness of the layer below. It may also be called a material resin layer without limiting its purpose. The planarizing layer may be composed of an organic compound, which may be low molecular weight or high molecular weight, but high molecular weight is preferred.
[0052] The planarization layer may be provided above or below the color filter, and its constituent materials may be the same or different. Specifically, examples include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, urea resin, etc.
[0053] Microlens An organic light-emitting device may have optical elements such as microlenses on its light-emitting side. Microlenses may be made of acrylic resin, epoxy resin, or the like. Microlenses may be used to increase the amount of light extracted from the organic light-emitting device or to control the direction of the extracted light. Microlenses may have a hemispherical shape. If they have a hemispherical shape, among the tangents tangent to the hemisphere, there is a tangent parallel to the insulating layer, and the point of contact between that tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be similarly determined in any cross-sectional view. That is, among the tangents tangent to the semicircle of the microlens in the cross-sectional view, there is a tangent parallel to the insulating layer, and the point of contact between that tangent and the semicircle is the vertex of the microlens.
[0054] Furthermore, the midpoint of a microlens can also be defined. In the cross-section of a microlens, a line segment can be imagined from the point where one arc ends to the point where another arc ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross-section used to determine the vertices and midpoints may be a cross-section perpendicular to the insulating layer.
[0055] Opposing board A counter substrate may be provided on the planarized layer. The counter substrate is called a counter substrate because it is provided in a position corresponding to the aforementioned substrate. The constituent material of the counter substrate may be the same as that of the aforementioned substrate. The counter substrate may be the second substrate if the aforementioned substrate is referred to as the first substrate.
[0056] organic layer The organic compound layer (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting element according to one embodiment of the present invention is formed by the method shown below.
[0057] The organic compound layer constituting the organic light-emitting element according to one embodiment of the present invention can be formed using a dry process such as vacuum deposition, ionization deposition, sputtering, or plasma deposition. Alternatively, instead of a dry process, a wet process can be used in which the layer is formed by dissolving the compound in a suitable solvent and applying a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).
[0058] When layers are formed using methods such as vacuum deposition or solution coating, crystallization is less likely to occur, resulting in excellent stability over time. Furthermore, when forming films using coating methods, it is possible to combine the film with an appropriate binder resin.
[0059] Examples of the binder resins mentioned above include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin.
[0060] Furthermore, these binder resins may be used individually as homopolymers or copolymers, or as a mixture of two or more types. Additionally, known additives such as plasticizers, antioxidants, and UV absorbers may be used in combination as needed.
[0061] Pixel circuit The light-emitting device may have a pixel circuit connected to a light-emitting element. The pixel circuit may be an active-matrix type that independently controls the light emission of a first light-emitting element and a second light-emitting element. The active-matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the light emission brightness of the light-emitting element, a transistor that controls the light emission timing, a capacitor that holds the gate voltage of the transistor that controls the light emission brightness, and a transistor for connecting to GND without going through the light-emitting element.
[0062] The light-emitting device has a display area and a peripheral area arranged around the display area. The display area has a pixel circuit, and the peripheral area has a display control circuit. The mobility of the transistors constituting the pixel circuit may be smaller than the mobility of the transistors constituting the display control circuit.
[0063] The slope of the current-voltage characteristics of the transistors constituting the pixel circuit can be smaller than the slope of the current-voltage characteristics of the transistors constituting the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristic.
[0064] The transistors that make up the pixel circuit are transistors connected to light-emitting elements, such as the first light-emitting element.
[0065] pixels The organic light-emitting device has multiple pixels. Each pixel has subpixels that emit light of a different color from the others. The subpixels may each have, for example, RGB light-emitting colors.
[0066] A pixel emits light in a region also called the pixel aperture. This region is the same as the first region. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.
[0067] The distance between subpixels may be 10 μm or less, specifically 8 μm, 7.4 μm, or 6.4 μm.
[0068] Pixels can take on known arrangements in a plan view. For example, they may be in a stripe arrangement, delta arrangement, pentile arrangement, or Bayer arrangement. The shape of subpixels in a plan view may be any known shape. For example, rectangles, rhombuses, hexagons, etc. Of course, even if it is not a precise shape, if it is close to a rectangle, it is included in the category of rectangles. The shape of subpixels and the pixel arrangement can be used in combination.
[0069] Applications of the organic light-emitting element according to one embodiment of the present invention An organic light-emitting element according to one embodiment of the present invention can be used as a component of a display device or lighting device. Other applications include exposure light sources for electrophotographic image forming apparatuses, backlights for liquid crystal display devices, and light-emitting devices with a color filter in a white light source.
[0070] The display device may also be an image information processing device that has an image input unit for receiving image information from an area CCD, linear CCD, memory card, etc., an information processing unit for processing the input information, and displays the input image on the display unit.
[0071] Furthermore, the display unit of the imaging device or inkjet printer may have a touch panel function. The driving method for this touch panel function may be infrared, capacitive, resistive, or electromagnetic induction, and is not particularly limited. The display device may also be used as the display unit of a multifunction printer.
[0072] The following will provide a detailed explanation using Figures 6 to 12(a) and 12(b).
[0073] Figure 6 is a schematic diagram showing an example of a display device using a semiconductor device 900 that functions as a light-emitting device in this embodiment. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. Active elements such as transistors are arranged on the circuit board 1007. The battery 1008 does not need to be provided if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be provided in this position. The semiconductor device 900 can be applied to the display panel 1005. The element region 102 of the semiconductor device 900 that functions as the display panel 1005 is connected to and operates with active elements such as transistors arranged on the circuit board 1007.
[0074] The display device 1000 shown in Figure 6 may be used as the display unit of a photoelectric conversion device (imaging device) having an optical unit with multiple lenses and an image sensor that receives light passing through the optical unit and converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the image sensor. The display unit may be an external display unit exposed to the outside of the photoelectric conversion device, or a display unit located inside the viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.
[0075] Figure 7 is a schematic diagram showing an example of a photoelectric converter using a semiconductor device 900 that functions as a light-emitting device according to this embodiment. The photoelectric converter 1100 may have a viewfinder 1101, a rear display 1102, an operating unit 1103, and a housing 1104. The photoelectric converter 1100 may also be called an imaging device. The semiconductor device 900 of this embodiment can be applied to the display unit, which is the viewfinder 1101 or the rear display 1102. In this case, the element area 102 of the semiconductor device 900 may display not only the image to be captured, but also environmental information, imaging instructions, etc. Environmental information may include the intensity of ambient light, the direction of ambient light, the speed at which the subject is moving, and the possibility that the subject is obscured by an obstacle.
[0076] Since the optimal timing for imaging is often very short, it is desirable to display information as quickly as possible. Therefore, a semiconductor device 900 that functions as a light-emitting device, in which an organic light-emitting material such as an organic EL element is arranged in an optical element with an element region 102, may be used in the viewfinder 1101 or the rear display 1102. This is because organic light-emitting materials have a fast response speed. A semiconductor device 900 that functions as a light-emitting device using an organic light-emitting material is more suitable than a liquid crystal display device for these devices where display speed is required.
[0077] The photoelectric converter 1100 has an optical section (not shown). The optical section has multiple lenses, and the light that passes through the optical section is imaged onto a photoelectric converter element (not shown) housed in a light-receiving housing 1104. The focus can be adjusted by adjusting the relative positions of the multiple lenses. This operation can also be performed automatically.
[0078] The semiconductor device 900, which functions as a light-emitting device, may be applied to the display section of an electronic device. In this case, it may have both a display function and an operating function. Examples of portable terminals include mobile phones such as smartphones, tablets, and head-mounted displays.
[0079] Figure 8 is a schematic diagram showing an example of an electronic device using the semiconductor device 900 functioning as a light-emitting device according to this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type response unit. The operation unit 1202 may also be a biometric recognition unit that recognizes fingerprints to unlock or otherwise perform actions. A portable device having a communication unit can also be called a communication device. The semiconductor device 900 of this embodiment can be applied to the display unit 1201.
[0080] Figures 9(a) and 9(b) are schematic diagrams showing an example of a display device using the semiconductor device 900 functioning as a light-emitting device of this embodiment. Figure 8(a) is a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The semiconductor device 900 of this embodiment can be applied to the display unit 1302. The display device 1300 may also have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in Figure 9(a). For example, the lower edge of the frame 1301 may also serve as the base 1303. Also, the frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.
[0081] Figure 9(b) is a schematic diagram showing another example of a display device using the semiconductor device 900 functioning as a light-emitting device of this embodiment. The display device 1310 in Figure 9(b) is configured to be foldable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The semiconductor device 900 of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display device without seams. The first display unit 1311 and the second display unit 1312 can be separated by a bending point. The first display unit 1311 and the second display unit 1312 may each display different images, or they may display a single image together.
[0082] Figure 10 is a schematic diagram showing an example of a lighting device using a semiconductor device 900 that functions as a light-emitting device according to this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The semiconductor device 900 of this embodiment can be applied as the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse the light from the light source, such as for lighting up, and deliver light over a wide area. A cover may be provided on the outermost part if necessary. The lighting device 1400 may have both the optical film 1404 and the light diffusion unit 1405, or it may have only one of them.
[0083] The lighting device 1400 is, for example, a device for illuminating a room. The lighting device 1400 may emit white light, daylight white light, or any other color from blue to red. It may have a dimming circuit for adjusting the brightness of these colors. The lighting device 1400 may have a power supply circuit connected to the element area 102 of the semiconductor device 900, which functions as a light source 1402. The power supply circuit is a circuit that converts AC voltage to DC voltage. White light has a color temperature of 4200K, and daylight white light has a color temperature of 5000K. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat dissipation section. The heat dissipation section releases heat from inside the device to the outside, and examples include metals with high specific heat, liquid silicon, etc.
[0084] Figure 11 is a schematic diagram of an automobile having a taillight, which is an example of a vehicle light fixture using the semiconductor device 900 that functions as a light-emitting device in this embodiment. The automobile 1500 may have a taillight 1501, and the taillight 1501 may be illuminated when the brakes are applied or otherwise. The semiconductor device 900 in this embodiment may also be used as a headlight as a vehicle light fixture. The automobile is an example of a mobile body, and the mobile body may be a ship, drone, aircraft, railway vehicle, industrial robot, etc. The mobile body may have a body and a light fixture installed thereon. The light fixture may indicate the current position of the body.
[0085] The semiconductor device 900, which functions as a light-emitting device according to this embodiment, can be applied to the tail lamp 1501. The tail lamp 1501 may have a protective member that protects the element region 102 of the semiconductor device 900 that functions as the tail lamp 1501. The protective member can be made of any material as long as it has a reasonably high strength and is transparent, but it may be made of polycarbonate or the like. Alternatively, the protective member may be made of polycarbonate mixed with a flangic acid derivative, an acrylonitrile derivative, or the like.
[0086] The automobile 1500 may have a body 1503 and windows 1502 attached thereto. The windows may be for checking the front and rear of the automobile, or they may be transparent displays. The semiconductor device 900, which functions as a light-emitting device in this embodiment, may be used as the transparent display. In this case, the constituent materials such as electrodes of the semiconductor device 900 are made of transparent materials.
[0087] Referring to Figures 12(a) and 12(b), further application examples of the semiconductor device 900 functioning as a light-emitting device of this embodiment will be described. The semiconductor device 900 functioning as a light-emitting device can be applied to systems that can be worn as wearable devices such as smart glasses, head-mounted displays (HMDs), and smart contact lenses. The imaging display device used in such application examples has an imaging device capable of photoelectric conversion of visible light and a light-emitting device capable of emitting visible light.
[0088] Figure 12(a) illustrates a pair of glasses 1600 (smart glasses) according to one application example. An imaging device 1602, such as a CMOS sensor or SPAD, is provided on the front surface of the lens 1601 of the glasses 1600. A semiconductor device 900, which functions as a light-emitting device in this embodiment, is provided on the back surface of the lens 1601.
[0089] The eyeglasses 1600 further include a control device 1603. The control device 1603 functions as a power supply that provides power to the imaging device 1602 and the semiconductor device 900 according to each embodiment. The control device 1603 also controls the operation of the imaging device 1602 and the semiconductor device 900. The lens 1601 has an optical system formed therein for focusing light onto the imaging device 1602.
[0090] Figure 12(b) illustrates a pair of glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, which is equipped with an imaging device equivalent to an imaging device 1602 and a semiconductor device 900 that functions as a light-emitting device. The lens 1611 has an optical system formed therein for projecting light emitted from the imaging device and the semiconductor device 900 within the control device 1612, and an image is projected onto the lens 1611. The control device 1612 functions as a power supply that provides power to the imaging device and the semiconductor device 900, and also controls the operation of the imaging device and the semiconductor device 900. The control device 1612 may have a gaze detection unit that detects the wearer's gaze. Gaze detection may use infrared light. The infrared light-emitting unit emits infrared light towards the eyeball of the user who is gazing at the displayed image. The imaging unit, which has a photodetector, detects the reflected light from the eyeball of the emitted infrared light, thereby obtaining an image of the eyeball. By having a reduction mechanism that reduces the amount of light transmitted from the infrared light-emitting part to the display part in a planar view, the degradation of image quality is reduced.
[0091] The user's gaze towards the displayed image is detected from an image of the eyeball obtained by imaging with infrared light. Any known method can be applied to gaze detection using an image of the eyeball. For example, a gaze detection method based on the Purkinje image obtained by the reflection of the irradiated light from the cornea can be used.
[0092] More specifically, gaze detection processing is performed based on the pupil-corneal reflection method. Using the pupil-corneal reflection method, a gaze vector representing the orientation (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image contained in the captured image of the eyeball, thereby detecting the user's gaze.
[0093] A semiconductor device 900 that functions as a light-emitting device according to one embodiment of the present invention has an imaging device having a light-receiving element, and may control the displayed image based on the user's gaze information from the imaging device.
[0094] Specifically, the semiconductor device 900 determines a first field of view area that the user is fixated on, and a second field of view area other than the first field of view area, based on gaze information. The first and second field of view areas may be determined by the control device of the semiconductor device 900, or they may be determined by an external control device and received. In the display area of the semiconductor device 900, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.
[0095] Furthermore, the display area has a first display area and a second display area different from the first display area, and based on gaze information, a higher priority area is determined from the first and second display areas. The first and second display areas may be determined by the control device of the semiconductor device 900, or they may be determined by an external control device and received. The resolution of the higher priority area may be controlled to be higher than the resolution of the areas other than the higher priority area. In other words, the resolution of areas with relatively lower priority may be set lower.
[0096] AI may be used to determine the first field of view area and high-priority areas. The AI may be a model configured to estimate the angle of line of sight and the distance to the target object at the end of the line of sight from the image of the eye, using the image of the eye and the direction the eye was actually looking in that image as training data. The AI program may be installed in the semiconductor device 900, the imaging device, or an external device. If installed in an external device, it is transmitted to the semiconductor device 900 via communication.
[0097] When display control is based on visual detection, this method is preferably applicable to smart glasses that further include an imaging device for capturing images of the surrounding environment. The smart glasses can display the captured external information in real time.
[0098] The disclosures herein include the following semiconductor devices, light-emitting devices, display devices, photoelectric converters, electronic devices, lighting devices, and mobile devices.
[0099] (Item 1) A semiconductor device comprising: an element substrate having a first surface provided with an element region on which optical elements are arranged and a peripheral region on which external connection terminals are arranged; a light-transmitting substrate having a second surface bonded to the first surface via a bonding member so as to cover the element region; a wiring substrate having a third surface on which electrodes connected to the external connection terminals are provided; and a reinforcing member for reinforcing the bonding strength between the element substrate and the wiring substrate, The external connection terminals are arranged along the first edge of the first surface, The side surface of the light-transmitting substrate perpendicular to the second surface includes a fourth surface arranged along the first edge, Between the second and fourth surfaces, a fifth surface is provided, which is chamfered so that its angle with respect to the second surface is obtuse. The connecting member abuts against the fifth surface, A semiconductor device characterized in that the reinforcing member abuts the sixth surface of the wiring board opposite to the third surface, the peripheral region, and the fourth surface.
[0100] (Item 2) The connecting member abuts against a part of the fifth surface, The semiconductor device according to item 1, characterized in that the reinforcing member further abuts against the portion of the fifth surface that is not covered by the connecting member.
[0101] (Item 3) The semiconductor device according to claim 1 or 2, characterized in that the reinforcing member is in contact with the connecting member.
[0102] (Item 4) The light-transmitting substrate has a seventh surface on the side opposite to the second surface, The present invention further includes a light-transmitting member and a frame member disposed between the light-transmitting member and the seventh surface, and disposed so as to surround the outer edge of the seventh surface. The frame member is provided with a contact portion that contacts the seventh surface, A semiconductor device according to any one of items 1 to 3, characterized in that, in the orthogonal projection onto the first surface, the outer edge of the contact portion is positioned so as to overlap with the outer edge of the seventh surface, or to be positioned inward from the outer edge of the seventh surface.
[0103] (Item 5) The light-transmitting substrate has a seventh surface on the side opposite to the second surface, Between the fourth and seventh surfaces, an eighth surface is provided, which is chamfered so that its angle with respect to the seventh surface is obtuse. The semiconductor device according to any one of claims 1 to 3, characterized in that the reinforcing member is further in contact with the eighth surface.
[0104] (Item 6) The semiconductor device according to item 5, characterized in that, in the orthogonal projection onto the first surface, the outer edge of the seventh surface is positioned outside the outer edge of the second surface.
[0105] (Item 7) The semiconductor device according to item 5 or 6, characterized in that the outer edges of the second surface and the seventh surface are chamfered around their entire circumference.
[0106] (Item 8) A semiconductor device according to any one of items 5 to 7, characterized in that, in the orthogonal projection onto the first surface, the fifth surface and the eighth surface do not overlap with the element region.
[0107] (Item 9) The present invention further includes a light-transmitting member and a frame member disposed between the light-transmitting member and the seventh surface, and disposed so as to surround the outer edge of the seventh surface. The frame member is provided with a contact portion that contacts the seventh surface, A semiconductor device according to any one of items 5 to 8, characterized in that, in the orthogonal projection onto the first surface, the outer edge of the contact portion is positioned so as to overlap with the outer edge of the seventh surface, or to be positioned inward from the outer edge of the seventh surface.
[0108] (Item 10) The external connection terminal and the electrode are connected via a bonding member. A semiconductor device according to any one of items 1 to 9, characterized in that the reinforcing member is in contact with the joining member.
[0109] (Item 11) Including a semiconductor device described in any one of items 1 through 10, A light-emitting device characterized in that the optical element includes a light-emitting element.
[0110] (Item 12) A display device characterized by having a light-emitting device as described in item 11 and an active element connected to the light-emitting device.
[0111] (Item 13) It comprises an optical unit having multiple lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image. The photoelectric conversion device is characterized in that the display unit is a display unit that displays an image captured by the image sensor, and has the light-emitting device described in item 11.
[0112] (Item 14) It comprises a housing on which a display unit is provided, and a communication unit provided in the housing for communicating with the outside, The display unit is an electronic device characterized by having the light-emitting device described in item 11.
[0113] (Item 15) A lighting device having a light source and at least one of a light diffusing section and an optical film, The aforementioned light source is characterized by having the light-emitting device described in item 11.
[0114] (Item 16) A mobile body having an aircraft body and a lighting fixture provided on the aircraft body, The aforementioned light fixture is a mobile body characterized by having the light-emitting device described in item 11.
[0115] (Item 17) A wearable device having a display device for displaying images, The display device is a wearable device characterized by having the light-emitting device described in item 11.
[0116] The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of Symbols]
[0117] 100: Element area, 101: External connection terminal, 102: Element area, 103: Peripheral area, 104: Edge, 111, 212, 313, 214, 215, 316, 217, 218: Surface, 200: Light-transmitting substrate, 300: Wiring board, 301: Electrode, 500: Connecting member, 600: Reinforcement member
Claims
1. A semiconductor device comprising: an element substrate having a first surface provided with an element region on which optical elements are arranged and a peripheral region on which external connection terminals are arranged; a light-transmitting substrate having a second surface bonded to the first surface via a bonding member so as to cover the element region; a wiring substrate having a third surface on which electrodes connected to the external connection terminals are provided; and a reinforcing member for reinforcing the bonding strength between the element substrate and the wiring substrate, The external connection terminals are arranged along the first edge of the first surface, The side surface of the light-transmitting substrate perpendicular to the second surface includes a fourth surface arranged along the first edge. Between the second surface and the fourth surface, a fifth surface is provided, which is chamfered so that its angle with respect to the second surface is obtuse. The connecting member abuts against the fifth surface, The reinforcing member abuts against the sixth surface of the wiring board opposite to the third surface, the peripheral region, and the fourth surface. The semiconductor device is characterized in that the second surface is in contact only with the coupling member.
2. The connecting member abuts against a part of the fifth surface, The semiconductor device according to claim 1, characterized in that the reinforcing member further abuts against the portion of the fifth surface that is not covered by the connecting member.
3. The semiconductor device according to claim 2, characterized in that the reinforcing member is in contact with the connecting member.
4. The light-transmitting substrate has a seventh surface on the side opposite to the second surface, The present invention further includes a light-transmitting member and a frame member disposed between the light-transmitting member and the seventh surface, and disposed so as to surround the outer edge of the seventh surface. The frame member is provided with a contact portion that contacts the seventh surface, The semiconductor device according to claim 1, characterized in that, in the orthogonal projection onto the first surface, the outer edge of the contact portion is positioned to overlap with the outer edge of the seventh surface, or to be positioned inward from the outer edge of the seventh surface.
5. The light-transmitting substrate has a seventh surface on the side opposite to the second surface, Between the fourth and seventh surfaces, an eighth surface is provided, which is chamfered so that its angle with respect to the seventh surface is obtuse. The semiconductor device according to claim 1, characterized in that the reinforcing member is further in contact with the eighth surface.
6. The semiconductor device according to claim 5, characterized in that, in the orthogonal projection onto the first surface, the outer edge of the seventh surface is positioned outside the outer edge of the second surface.
7. The semiconductor device according to claim 5, characterized in that the outer edges of the second surface and the seventh surface are chamfered around their entire circumference.
8. The semiconductor device according to claim 5, characterized in that, in the orthogonal projection onto the first surface, the fifth surface and the eighth surface do not overlap with the element region.
9. The semiconductor device according to claim 5, characterized in that the reinforcing member is in contact with the connecting member.
10. The present invention further includes a light-transmitting member and a frame member disposed between the light-transmitting member and the seventh surface, and disposed so as to surround the outer edge of the seventh surface. The frame member is provided with a contact portion that contacts the seventh surface, The semiconductor device according to claim 5, characterized in that, in the orthogonal projection onto the first surface, the outer edge of the contact portion is positioned to overlap with the outer edge of the seventh surface, or to be positioned inward from the outer edge of the seventh surface.
11. The light-transmitting substrate has a seventh surface on the side opposite to the second surface, Between the fourth and seventh surfaces, an eighth surface is provided, which is chamfered so that its angle with respect to the seventh surface is obtuse. The semiconductor device according to claim 2, characterized in that the reinforcing member is further in contact with the eighth surface.
12. The semiconductor device according to claim 11, characterized in that, in the orthogonal projection onto the first surface, the outer edge of the seventh surface is positioned further out than the outer edge of the second surface.
13. The semiconductor device according to claim 11, characterized in that the outer edges of the second surface and the seventh surface are chamfered around their entire circumference.
14. The semiconductor device according to claim 11, characterized in that, in the orthogonal projection onto the first surface, the fifth surface and the eighth surface do not overlap with the element region.
15. The semiconductor device according to claim 11, characterized in that the reinforcing member is in contact with the connecting member.
16. The present invention further includes a light-transmitting member and a frame member disposed between the light-transmitting member and the seventh surface, and disposed so as to surround the outer edge of the seventh surface. The frame member is provided with a contact portion that contacts the seventh surface, The semiconductor device according to claim 11, characterized in that, in the orthogonal projection onto the first surface, the outer edge of the contact portion is positioned to overlap with the outer edge of the seventh surface, or to be positioned inward from the outer edge of the seventh surface.
17. The external connection terminal and the electrode are connected via a bonding member. The semiconductor device according to claim 1, characterized in that the reinforcing member is in contact with the joining member.
18. A semiconductor device according to any one of claims 1 to 17, A light-emitting device characterized in that the optical element includes a light-emitting element.
19. A display device comprising a light-emitting device according to claim 18 and an active element connected to the light-emitting device.
20. It comprises an optical unit having multiple lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image. The photoelectric conversion device is characterized in that the display unit is a display unit that displays an image captured by the image sensor, and has the light-emitting device described in claim 18.
21. It comprises a housing on which a display unit is provided, and a communication unit provided in the housing for communicating with the outside, The display unit is an electronic device characterized by having the light-emitting device described in claim 18.
22. A lighting device having a light source and at least one of a light diffusing section and an optical film, The aforementioned light source is characterized by having the light-emitting device described in claim 18.
23. A mobile body having an aircraft body and a lighting fixture provided on the aircraft body, The aforementioned light fixture is a mobile body characterized by having the light-emitting device described in claim 18.
24. A wearable device having a display device for displaying images, The wearable device is characterized in that the display device has the light-emitting device described in claim 18.