Light-emitting element

Abstract

The present invention discloses a light-emitting element, which includes a semiconductor structure, including a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer includes a first edge; a first insulating structure, located on the second semiconductor layer and contacting the first edge, and including an opening on the second semiconductor layer; a reflective structure, located on the first insulating structure and electrically connected to the second semiconductor layer through the opening, and including an outer edge; and a second insulating structure, located on the first insulating structure and the reflective structure, and including a first insulating opening exposing the first semiconductor layer, and a second insulating opening exposing the reflective structure, wherein the reflective structure covers a portion of the first insulating structure and is located between the first insulating structure and the second insulating structure.

Description

[0001] This application is a divisional application of the Chinese invention patent application (application number: 201810076678.6, application date: January 26, 2018, invention name: light-emitting element). Technical Field

[0002] The present invention relates to a structure of a light-emitting element, and in particular to a light-emitting element comprising a semiconductor structure and a reflective layer located on the semiconductor structure. Background Art

[0003] Light-emitting diodes (LEDs) are solid-state semiconductor light-emitting devices. Their advantages include low power consumption, low heat generation, long operating life, shock resistance, compact size, fast response speed, and excellent optoelectronic properties, such as stable emission wavelength. Therefore, LEDs are widely used in household appliances, device indicator lights, and optoelectronic products. Summary of the Invention

[0004] The present invention provides a light-emitting element, which includes a semiconductor structure, including a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer includes a first edge; a first insulating structure, located on the second semiconductor layer and contacting the first edge, and including an opening on the second semiconductor layer; a reflective structure, located on the first insulating structure and electrically connected to the second semiconductor layer through the opening, and including an outer edge; and a second insulating structure, located on the first insulating structure and the reflective structure, and including a first insulating opening exposing the first semiconductor layer, and a second insulating opening exposing the reflective structure, wherein the reflective structure covers a portion of the first insulating structure and is located between the first insulating structure and the second insulating structure.

[0005] The present invention provides a light-emitting element, comprising a semiconductor structure including a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; and a first electrode pad located on the reflective structure and including an outer wall adjacent to the outer edge of the reflective structure, wherein, from a side view of the light-emitting element, the outer edge of the reflective structure extends beyond the outer wall of the first electrode pad, and the outer edge of the reflective structure does not extend beyond the first edge of the second semiconductor layer.

[0006] The present invention provides a light-emitting element, which includes a semiconductor structure, including a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer includes a first edge; a reflective structure, located on the second semiconductor layer and including an outer edge; a second insulating structure, located on the reflective structure and including a first insulating opening exposing the first semiconductor layer, and a second insulating opening exposing the reflective structure; and a first contact portion, which surrounds the semiconductor structure and contacts the first semiconductor layer through the first insulating opening to form an electrical connection, wherein, when viewed from a top view of the self-light-emitting element, the perimeter of the first contact portion is greater than the perimeter of the active layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 FIG1 is a top view of a light-emitting element 1c disclosed in one embodiment of the present invention;

[0008] Figure 2 To follow Figure 1 A schematic cross-sectional view of the light-emitting element 1c as shown along line DD';

[0009] Figures 3A to 3C Partial cross-sectional schematic diagrams of a transparent conductive layer and a reflective layer of a light-emitting element disclosed in various embodiments of the present invention;

[0010] Figure 3D is a partial cross-sectional schematic diagram of a light-emitting element disclosed in an embodiment of the present invention;

[0011] Figure 4A Characteristic chart of samples A to B;

[0012] Figure 4B Characteristic chart of samples C to F;

[0013] Figure 5 is a top view of a light emitting element 2c disclosed in one embodiment of the present invention;

[0014] Figures 6A to 6I FIG1 is a flowchart of manufacturing the light-emitting elements 1c and 2c disclosed in an embodiment of the present invention;

[0015] Figure 7 To follow Figure 5 A schematic cross-sectional view of a light-emitting element 2c as shown along line EE';

[0016] Figure 8 is a schematic diagram of a light emitting device 3 according to an embodiment of the present invention;

[0017] Figure 9 FIG. 4 is a schematic diagram of a light emitting device 4 according to an embodiment of the present invention.

[0018] Explanation of symbols

[0019] 1c, 2c Second inner side of light emitting element 402c

[0020] 3, 4 Light-emitting devices 403c, 403c' First reflective portion

[0021] 11c Substrate 404c, 404c' Second reflective portion

[0022] 11s exposed surface 405c, 405c' third reflector

[0023] 1000c Light-emitting structure 41c Barrier layer

[0024] 10c semiconductor stack 50c second insulation structure

[0025] 100c Hole 501c First insulating opening

[0026] 101c first semiconductor layer 502c second insulating opening

[0027] 102c Second semiconductor layer 503 periphery

[0028] 102s surface 5031c protrusion

[0029] 103c Active layer 5032c Depression

[0030] 1011c First surface 51c Adhesive layer

[0031] 1012c Second surface 60c Contact layer

[0032] 1001c Second outer wall 600c ejector pin area

[0033] 1002c Inner wall 601c First contact portion

[0034] 1003c First outer side wall 602c Second contact portion

[0035] 20c First insulation structure 70c Third insulation structure

[0036] 201c surrounds the insulating portion 701c first opening

[0037] 2011c protrusion 702c second opening

[0038] 2012c Recessed portion 80c First electrode pad

[0039] 202c annular covering area 90c second electrode pad

[0040] 203c Opening E1 First Boundary

[0041] f20c top E2 second boundary

[0042] s20c side D, D' distance

[0043] t20c bottom G clearance

[0044] 30c Transparent conductive layer 51 Packaging substrate

[0045] 31c, 31c' first conductive portion 511 first gasket

[0046] 32c, 32c' Second conductive portion 512 Second gasket

[0047] 33c, 33c' Third conductive portion 53 Insulating portion

[0048] 301c First outer side 54 reflection structure

[0049] 302c first inner side 602 lampshade

[0050] f30c first transparent conductive part 604 reflector

[0051] f30c1 first peripheral 606 bearing portion

[0052] s30c Second transparent conductive portion 608 Light emitting unit

[0053] s30c1 second peripheral 610 light emitting module

[0054] t30c third transparent conductive part 612 lamp holder

[0055] t30c1 third peripheral 614 heat sink

[0056] 40c Reflective layer 616 connection portion

[0057] 401c Second outer side 618 Electrical connection element DETAILED DESCRIPTION

[0058] In order to make the description of the present invention more detailed and complete, please refer to the description of the following embodiments and the relevant drawings. However, the embodiments shown below are used to illustrate the light-emitting elements of the present invention and do not limit the present invention to the following embodiments. In addition, the dimensions, materials, shapes, relative configurations, etc. of the components described in the embodiments of this specification are not limited to these unless otherwise specified, and are merely illustrative. The sizes or positional relationships of the components shown in the drawings may be exaggerated for clarity. In the following description, components of the same or similar nature are displayed with the same names and symbols in order to appropriately omit detailed descriptions.

[0059] Figure 1 FIG. 1 is a top view of a light-emitting element 1 c disclosed in an embodiment of the present invention. Figure 2 To follow Figure 1 Schematic cross-sectional view of the light-emitting element 1c as shown by line DD'. Figure 6A 、 Figure 6B 、 Figure 6C 、 Figure 6D 、 Figure 6E and Figure 6G to Figure 6I This is a manufacturing flow chart of a light-emitting element 1c disclosed in an embodiment of the present invention. The light-emitting element 1c in the embodiment of the present invention is a flip-chip light-emitting diode. The light-emitting element 1c includes a substrate 11c and one or more semiconductor structures 1000c located on the substrate 11c. Each of the one or more semiconductor structures 1000c includes a semiconductor stack 10c, including a first semiconductor layer 101c, a second semiconductor layer 102c, and an active layer 103c located between the first semiconductor layer 101c and the second semiconductor layer 102c. The active layer 103c and the second semiconductor layer 102c are stacked sequentially on the first semiconductor layer 101c along a stacking direction, and the semiconductor structure 1000c includes an exposed portion exposing a portion of the first semiconductor layer 101c. Figure 2 、 Figure 6A As shown, a portion of the second semiconductor layer 102c and the active layer 103c are removed to expose an exposed portion. The exposed portion includes a first surface 1011c and one or more second surfaces 1012c of the first semiconductor layer 101c. In one embodiment, the first surface 1011c is located at an outer periphery of one or more semiconductor structures 1000c, and the first surface 1011c surrounds the second semiconductor layer 102c and the active layer 103c remaining on the substrate 11c. Figure 6Ais a top view of the semiconductor structure 1000c. In this embodiment, the light-emitting element 1c includes only one semiconductor structure 1000c, and the first surface 1011c of the first semiconductor layer 101c surrounds the second semiconductor layer 102 and the active layer 103c. In addition, in this embodiment, the first surface 1011c is substantially located in the peripheral region of the semiconductor structure 1000c. In another embodiment, the substrate 11c of the light-emitting element 1c further includes an exposed surface 11s to surround the outer periphery of the semiconductor structure 1000c. The light-emitting element 1c further includes one or more openings, such as holes 100c through the second semiconductor layer 102c and the active layer 103, to expose one or more second surfaces 1012c of the first semiconductor layer 101c. In one embodiment, multiple semiconductor structures 1000c are separated from each other by one or more openings, such as trenches, and the multiple semiconductor structures 1000c are connected to each other through the first semiconductor layer 101c. In one embodiment (not shown), the plurality of semiconductor structures 1000c are not connected to each other through the first semiconductor layer 101c and are physically separated from each other by one or more openings. In one embodiment, the light-emitting device 1c further includes a first insulating structure 20c, a transparent conductive layer 30c, a reflective structure including a reflective layer 40c and a barrier layer 41c, a second insulating structure 50c, a contact layer 60c, a third insulating structure 70c, a first electrode pad 80c, and a second electrode pad 90c located on the one or more semiconductor structures 1000c.

[0060] In one embodiment of the present invention, the substrate 11c includes a patterned surface. The patterned surface includes a plurality of protrusions. The shape of the protrusions includes a taper or a cone, and the protrusions can improve the light extraction efficiency of the light-emitting element. In one embodiment of the present invention, the substrate 11c is a growth substrate, for example, including a gallium arsenide (GaAs) wafer for growing aluminum gallium indium phosphide (AlGaInP), or a sapphire (Al2O3) wafer, a gallium nitride (GaN) wafer, or a silicon carbide (SiC) wafer for growing gallium nitride (GaN) or indium gallium nitride (InGaN). The semiconductor stack 10 can be a group III nitride compound semiconductor and is formed on the substrate 11c by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE), physical vapor deposition (PVD) or ion plating methods, such as sputtering or evaporation. In addition, before forming the semiconductor stack 10c, a buffer structure (not shown) can be formed on the substrate 11c to improve the lattice mismatch between the substrate 11c and the semiconductor stack 10c. The buffer structure can be composed of materials from the gallium nitride (GaN) series, such as gallium nitride and aluminum gallium nitride, or materials from the aluminum nitride (AlN) series, such as aluminum nitride. The buffer structure can be a single layer or a multilayer. The buffer structure can be formed by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or physical vapor deposition (PVD). Physical vapor deposition (PVD) includes sputtering, such as reactive sputtering, or evaporation, such as electron beam evaporation or thermal evaporation. In one embodiment, the buffer structure includes an aluminum nitride (AlN) buffer layer and is formed by sputtering. The aluminum nitride (AlN) buffer layer is formed on a growth substrate having a patterned surface. The sputtering method can form a dense buffer layer with high uniformity, so the aluminum nitride (AlN) buffer layer can be conformally deposited on the patterned surface of the substrate 11 c.

[0061] In one embodiment of the present invention, the semiconductor stack 10c includes optical properties, such as light emission angle or wavelength distribution, and electrical properties, such as forward voltage or forward current. In one embodiment of the present invention, the first semiconductor layer 101c and the second semiconductor layer 102c may be cladding layers or confinement layers, and the two have different conductivity types, electrical properties, polarities, or doped elements to provide electrons or holes. For example, the first semiconductor layer 101c is an n-type electrical semiconductor layer, and the second semiconductor layer 102c is a p-type electrical semiconductor layer. The active layer 103c is formed between the first semiconductor layer 101c and the second semiconductor layer 102c. Electrons and holes recombine in the active layer 103c under the drive of a current and convert electrical energy into light energy to emit a light. The wavelength of the light emitted by the light-emitting element 1c is adjusted by changing the physical and chemical composition of one or more layers of the semiconductor stack 10c. The material of the semiconductor stack 10c includes III-V semiconductor materials, such as Al x In y Ga (1-x-y) N or Al x In y Ga (1-x-y) P, where 0 ≤ x, y ≤ 1; (x + y) ≤ 1. Depending on the material of the active layer 103c, when the material of the semiconductor stack 10c is AlInGaP series, the active layer 103c can emit red light with a wavelength between 610nm and 650nm, or yellow light with a wavelength between 530nm and 570nm. When the material of the semiconductor stack 10c is InGaN series, the active layer 103c can emit blue light or deep blue light with a wavelength between 400nm and 490nm, or green light with a wavelength between 490nm and 550nm. When the material of the semiconductor stack 10c is AlGaN series, the active layer 103c can emit ultraviolet light with a wavelength between 250nm and 400nm. The active layer 103c can be a single heterostructure (SH), double heterostructure (DH), double-side double heterostructure (DDH), or multi-quantum well (MQW). The material of the active layer 103c can be a neutral, p-type, or n-type semiconductor.

[0062] Please refer to Figure 2In one embodiment, the semiconductor structure 1000c includes a first outer wall 1003c and a second outer wall 1001c, wherein one end of the first surface 1011c of the first semiconductor layer 101c is connected to the first outer wall 1003c, and the other end of the first surface 1011c is connected to the second outer wall 1001c. The second outer wall 1001c includes the sidewalls of the first semiconductor layer 101c, the active layer 103c, and the second semiconductor layer 102c. In this embodiment, the second outer wall 1001c is composed of the sidewalls of the first semiconductor layer 101c, the active layer 103c, and the second semiconductor layer 102c. The first outer wall 1003c is located between the first surface 1011c and the substrate 11c. In one embodiment, the first outer wall 1003c and the second outer wall 1001c are inclined relative to the first surface 1011c of the first semiconductor layer 101c. In one embodiment, the first outer wall 1003c is inclined relative to the exposed surface 11s of the substrate 11c. The first outer wall 1003c and the exposed surface 11s form an acute angle. In one embodiment, the first outer wall 1003c and the exposed surface 11s form an obtuse angle.

[0063] The semiconductor stack 10c further includes an inner sidewall 1002c. Similar to the second outer sidewall 1001c, the inner sidewall 1002c in the through-hole 100c is formed by the sidewalls of the first semiconductor layer 101c, the active layer 103c, and the second semiconductor layer 102c. In an embodiment of the present invention, the through-hole 100c is defined by the inner sidewall 1002c and the second surface 1012c of the first semiconductor layer 101c. One end of the inner sidewall 1002c is connected to the second surface 1012c of the first semiconductor layer 101c, and the other end of the inner sidewall 1002c is connected to a surface 102s of the second semiconductor layer 102c. The surface 102s of the second semiconductor layer 102c is substantially perpendicular to the stacking direction. The inner sidewall 1002c and the second outer sidewall 1001c are inclined relative to the surface 102s of the second semiconductor layer 102c. The inner sidewall 1002c is also inclined relative to the second surface 1012c of the first semiconductor layer 101c. The angle between the inner sidewall 1002c and the second surface 1012c is either acute or obtuse, and the angle between the second outer sidewall 1001c and the first surface 1011c is either acute or obtuse. The angle between the second outer sidewall 1001c and the surface 102 is between 100 and 140 degrees, similar to the angle between the inner sidewall 1002c and the surface 102s. Furthermore, the semiconductor structure 1000c further includes a first edge E1 and a second edge E2, wherein the first edge E1 is the boundary between the second outer sidewall 1001c and the surface 102s of the second semiconductor layer 102c, and the second edge E2 is the boundary between the inner sidewall 1002c and the surface 102s of the second semiconductor layer 102c. When viewed from above, the second semiconductor layer 102 includes the first edge E1. Specifically, when viewed from above, the first edge E1 is the outline of the surface 102s of the second semiconductor layer 102, and the second edge E2 is the outline of the through-hole 100c. In one embodiment, either the first edge E1 or the second edge E2 is closed. In one embodiment, the second edge E2 is surrounded by the first edge E1.

[0064] Figure 6B FIG. 2 is a top view of the first insulating structure 20c. In one embodiment of the present invention, the first insulating structure 20c is formed on the semiconductor structure 1000c of the light emitting element 1c by sputtering or deposition. Figure 2 and Figure 6BAs shown, viewed from above, the first insulating structure 20c includes a surrounding insulating portion 201c and a plurality of annular covering areas 202c. In the present embodiment, the surrounding insulating portion 201c is located on an area of ​​the semiconductor structure 1000c close to the first edge E1, and the plurality of annular covering areas 202c are located on an area of ​​the semiconductor structure 1000c close to the second edge E2. In one embodiment, the surrounding insulating portion 201c and the multiple annular covering areas 202c both cover a portion of the surface 102s of the second semiconductor layer 102c, the second outer sidewall 1001c and the inner sidewall 1002c of the semiconductor structure 1000c. In addition, the surrounding insulating portion 201c covers a portion of the first surface 1011c, and the annular covering area 202c covers a portion of the second surface 1012c. As shown in FIG. Figure 2 As shown, the first insulating structure 20c includes a top portion f20c on the surface 102s of the second semiconductor layer 102c, a side portion s20c located on the second outer sidewall 1001c and the inner sidewall 1002c, and a bottom portion t20c located on the first surface 1011c and the second surface 1012c of the first semiconductor layer 101c. The bottom portion t20c exposes a portion of the second surface 1012c and the first surface 1011c. Specifically, the first insulating structure 20c is formed on the first surface 1011c, the second surface 1012c, the second outer sidewall 1001c, the inner sidewall 1002c, and the surface 102s. The first insulating structure 20c further includes an opening 203c on the surface 102s of the second semiconductor layer 102c. The opening 203c is defined by the side surface of the top portion f20c. The first insulating structure 20c further includes another opening 204c on the second surface 1012c, and the opening 204c is defined by the side surface of the bottom t20c. The material of the first insulating structure 20c includes a non-conductive material. The non-conductive material includes an organic material, an inorganic material or a dielectric material. The organic material includes Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide or fluorocarbon polymer. The inorganic material includes silicone or glass. The dielectric material includes aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x). In one embodiment, the first insulating structure 20c includes one or more layers. The first insulating structure 20c can protect the sidewalls of the semiconductor structure 1000c and prevent the active layer 103c from being damaged by subsequent manufacturing processes. When the first insulating structure 20c includes multiple layers, the first insulating structure 20c can be a Bragg reflector (DBR) structure to protect the sidewalls of the semiconductor structure 1000c and selectively reflect the light of a specific wavelength emitted by the active layer 103c to the outside of the light-emitting element 1c to increase the brightness. Specifically, the first insulating structure 20c can be formed by alternately stacking two sub-layers, such as SiO x Sublayer and TiO x Sublayers. More specifically, the Bragg reflector structure can include multiple pairs of sublayers, each with a different refractive index from its adjacent sublayers. By adjusting the refractive index difference between the high-refractive-index sublayer and the low-refractive-index sublayer in each pair of layers, the Bragg reflector structure can have a high reflectivity at a specific wavelength or within a specific wavelength range. The two sublayers in each pair of layers have different thicknesses. Furthermore, within a Bragg reflector structure, sublayers made of the same material can have the same or different thicknesses.

[0065] Figure 6C FIG. 3 is a top view of the transparent conductive layer 30c. Figure 1 、 Figure 2 and Figure 6C As shown, in this embodiment, the transparent conductive layer 30c of the light-emitting element 1c is formed on the surface 102s of the second semiconductor layer 102c. In one embodiment, the transparent conductive layer 30c can cover a portion of the top f20c of the first insulating structure 20c. Specifically, the transparent conductive layer 30c includes a first outer edge 301c and a first inner edge 302c located on the surface 102s of the second semiconductor layer 102c. The transparent conductive layer 30c does not extend beyond the first edge E1 and the second edge E2. In other words, Figure 1 As shown in a top view of the light-emitting element 1c, the first outer edge 301c is closer to the center of the semiconductor structure 1000c than the first edge E1, and the first inner edge 302c is closer to the center of the semiconductor structure 1000c than the second edge E2. From the top view of the light-emitting element 1c, the first outer edge 301c is surrounded by the first edge E1, and the first inner edge 302c surrounds the second edge E2. In one embodiment, the transparent conductive layer 30c may cover the side portion s20c of the first insulating structure 20c.

[0066] The quality of the first insulating structure 20c may be affected by manufacturing process capabilities and stress, and cracks may occur in the first insulating structure 20c. In one embodiment, the transparent conductive layer 30c is located on the surface 102s and does not extend to cover the second outer sidewall 1001c and the inner sidewall 1002c. This reduces the risk of leakage caused by cracks in the first insulating structure 20c, which could lead to a short circuit between the transparent conductive layer 30c and the semiconductor stack 10c. Therefore, the light-emitting element 1c can have stable reliability. Because the transparent conductive layer 30c is formed on substantially the entire surface 102s of the second semiconductor layer 102c and is in contact with the second semiconductor layer 102c, current can be evenly distributed throughout the second semiconductor layer 102c through the transparent conductive layer 30c.

[0067] The transparent conductive layer 30c comprises a material that is transparent to light emitted from the active layer 103c, such as a metal oxide. The metal oxide may include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium doped zinc oxide (GZO), tungsten doped indium oxide (IWO), or zinc oxide (ZnO). The transparent conductive layer 30c may have low contact resistance with the second semiconductor layer 102c, for example, forming an ohmic contact therebetween. The transparent conductive layer 30c may be a single layer or multiple layers. For example, when the transparent conductive layer 30c includes multiple sub-layers, the transparent conductive layer 30c may be a Bragg reflector (DBR) structure. In this embodiment, the material of the Bragg reflector structure of the transparent conductive layer 30c is conductive. In one embodiment, the shape of the transparent conductive layer 30c, viewed from above, roughly corresponds to the shape of the second semiconductor layer 102c. Figure 6A and Figure 6C As shown, Figure 6C The shape of the transparent conductive layer 30c corresponds approximately to Figure 6A The shape of the second semiconductor layer 102c.

[0068] In one embodiment of the present invention, the reflective structure of the light-emitting element 1c is formed on the transparent conductive layer 30c. The reflective structure includes a reflective layer 40c, a barrier layer 41c, or a combination thereof. In one embodiment, the shape of the reflective layer 40c, viewed from above, substantially corresponds to the shape of the second semiconductor layer 102c. Figure 6D FIG is a top view of the reflective layer 40c. Figure 1 、 Figure 2 and Figure 6D As shown, the reflective layer 40c includes a second outer edge 401c and a second inner edge 402c. In one embodiment, the reflective layer 40c does not extend beyond the first outer edge 301c and / or the first inner edge 302c of the transparent conductive layer 30c, nor does it extend beyond the first edge E1 and / or the second edge E2 of the semiconductor structure 1000c. The first outer edge 301c of the transparent conductive layer 30c is located between the second outer edge 401c and the first edge E1 of the reflective layer 40c, and / or the first inner edge 302c is located between the second inner edge 402c and the second edge E2. In other words, the first outer edge 301c is closer to the first edge E1 than the second outer edge 401c, and the first inner edge 302c is closer to the second edge E2 than the second inner edge 402c. In one embodiment, the reflective layer 40c covers a portion of the top f20c of the first insulating structure 20c, such as the top f20c located on the surface 102s, and does not cover the side s20c or bottom t20c. Furthermore, a portion of the transparent conductive layer 30c near the first edge E1 and / or the second edge E2 is located between the reflective layer 40c and the top f20c. Specifically, the second outer edge 401c and / or the second inner edge 402c do not extend beyond the first outer edge 301c and / or the first inner edge 302c, respectively. In one embodiment, the transparent conductive layer 30c can prevent the reflective layer 40c from detaching from the first insulating structure 20c. More specifically, the reflective layer 40c is connected to the first insulating structure 20c via the transparent conductive layer 30c, and the transparent conductive layer 30c located between the reflective layer 40c and the first insulating structure 20c can enhance adhesion between the reflective layer 40c and the first insulating structure 20c.

[0069] In one embodiment, the second outer edge 401c is aligned with the first outer edge 301c of the transparent conductive layer 30c, and / or the second inner edge 402c is aligned with the first inner edge 302c of the transparent conductive layer 30c. In one embodiment, the second outer edge 401c is not aligned with the first edge E1, and / or the second inner edge 402c is not aligned with the second edge E2.

[0070] In one embodiment, the reflective layer 40c and the transparent conductive layer 30c do not extend to cover the sidewalls of the semiconductor structure 1000c, such as the second outer sidewall 1001c and the inner sidewall 1002c. This reduces the risk of leakage current from cracks in the reflective layer 40c, the transparent conductive layer 30c, and the first insulating structure 20c into the semiconductor structure 1000c, thereby causing an electrical short circuit to the light-emitting element 1c. Specifically, since the second outer sidewall 1001c and the inner sidewall 1002c are formed by the side surfaces of the first semiconductor layer 101c, the active layer 103c, and the second semiconductor layer 102c, if the reflective layer 40c extends to the second outer sidewall 1001c and the inner sidewall 1002c, leakage current may occur if the first insulating structure 20c has defects or cracks. Specifically, some materials of the reflective layer 40c (e.g., silver, aluminum) may diffuse into the first semiconductor layer 101c and the second semiconductor layer 102c through defects or cracks in the first insulating structure 20c. Due to the diffusion of the material of the reflective layer 40c, the first semiconductor layer 101c and the second semiconductor layer 102c are electrically connected, thereby generating a short circuit. Therefore, the reliability of the light-emitting element 1c may be reduced because the reflective layer 40c exceeds the first edge E1 and / or the second edge E2 and covers the side s20c. However, the present application is not limited to this embodiment. Other manufacturing process methods or materials or structures of the first insulating structure 20c, such as multi-layer insulating layers, can be used to improve the quality and mechanical strength of the first insulating structure 20c and prevent the problem of current short circuit.

[0071] In one embodiment, as viewed from above the light-emitting element 1c, the second semiconductor layer 102c comprises a first area, and the reflective layer 40c comprises a second area. In this embodiment, as viewed from above the light-emitting element 1c, the first area is defined by the first edge E1 and the second edge E2 of the second semiconductor layer 102c, and the second area is defined by the second outer edge 401c and the second inner edge 402c of the reflective layer 40c. The first edge E1 of the second semiconductor layer 102c surrounds the second outer edge 401c of the reflective layer 40c, and the second inner edge 402c surrounds the second edge E2 of the second semiconductor layer 102c. To increase the brightness of the light-emitting element 1c and enable more light emitted from the active layer 103c to be reflected by the reflective layer 40c, the second area of ​​the reflective layer 40c should be designed to be as large as possible. However, the trade-off between brightness and reliability of the light-emitting element 1c must also be considered. In one embodiment, the second area of ​​the reflective layer 40c is no less than 80% of the first area of ​​the second semiconductor layer 102c. In one embodiment, the second area is 82% to 96% of the first area. In one embodiment, the second area is 85% to 95% of the first area.

[0072] In other embodiments, a distance D is defined between the second outer edge 401c of the reflective layer 40c and the first edge E1 of the semiconductor structure 1000c, and a distance D' is defined between the second inner edge 402c and the second edge E2. In one embodiment, the distances D and D' are greater than zero. In one embodiment, the distances D and D' are no greater than 10 μm. In one embodiment, the distances D and D' are no greater than 8 μm. In one embodiment, the distances D and D' are greater than 0 μm and less than 10 μm. In one embodiment, the distances D and D' are between 2 μm and 8 μm. Furthermore, in another embodiment, the distances D and D' may be the same or different.

[0073] In one embodiment, the barrier layer 41c is formed on and covers the reflective layer 40c. An outer edge (not shown) of the barrier layer 41c surrounds the second outer edge 401c of the reflective layer 40c, and / or an inner edge (not shown) of the barrier layer 41c surrounds the second inner edge 402c of the reflective layer 40c. In one embodiment, the reflective layer 40c is formed on and covers the barrier layer 41c. The outer edge of the barrier layer 41c may be surrounded by the second outer edge 401c of the reflective layer 40c, and / or the inner edge of the barrier layer 41c may be surrounded by the second inner edge 402c of the reflective layer 40c. In one embodiment, the outer edge and inner edge of the barrier layer 41c respectively cover or align with the second outer edge 401c and the second inner edge 402c of the reflective layer 40c.

[0074] Figures 3A to 3C The following are partial cross-sectional views of the transparent conductive layer 30c and the reflective layer 40c near the first edge E1 or the second edge E2 of the light emitting element according to one embodiment of the present invention. The reflective layer 40c is formed on the transparent conductive layer 30c. In one embodiment, as shown in FIG. Figure 3A As shown, the reflective layer 40c and the transparent conductive layer 30c are formed on the first insulating structure 20c and do not extend onto the sidewall of the semiconductor structure 1000c or into the hole 100c. Figure 3B to Figure 3C As shown, the reflective layer 40c and the transparent conductive layer 30c formed on the first insulating structure 20c extend onto the sidewall of the semiconductor structure 1000c or into the hole 100c.

[0075] In one embodiment, if Figure 3A As shown, the reflective layer 40c is a discontinuous structure and includes a first reflective portion 403c and a second reflective portion 404c separated from each other. A gap G is located between the first reflective portion 403c and the second reflective portion 404c. In one embodiment, Figure 3AAs shown, the transparent conductive layer 30c is a discontinuous structure and includes a first conductive portion 31c and a second conductive portion 32c that are separated from each other. The second conductive portion 32c and the second reflective portion 404c are completely located above the first insulating structure 20c and the second semiconductor layer 102c. In one embodiment, the first conductive portion 31c and the second conductive portion 32c are located below the first reflective portion 403c and the second reflective portion 404c, respectively. Because the first reflective portion 403c is not connected to the second reflective portion 404c, the first conductive portion 31c is not connected to the second conductive portion 32c, and the second conductive portion 32c and the second reflective portion 404c are completely located above the first insulating structure 20c, current cannot flow between the first reflective portion 403c and the second reflective portion 404c. In other words, the second reflective portion 404c is electrically disconnected from the first reflective portion 403c.

[0076] In such Figure 3B An embodiment shown and Figure 3A The differences between the shown embodiments are: Figure 3B In the illustrated embodiment, the transparent conductive layer 30c includes a first conductive portion 31c and a third conductive portion 33c, which are separated from each other. The reflective layer 40c includes a first reflective portion 403c and a third reflective portion 405c, which are separated from each other. A gap G is defined between the first reflective portion 403c and the third reflective portion 405c. Furthermore, the third reflective portion 405c is electrically insulated from the first reflective portion 403c. Specifically, the third conductive portion 33c is formed on the first insulating structure 20c and the second semiconductor layer 102c and extends to the second outer sidewall 1001c to cover the side s20c and bottom t20c of the first insulating structure 20c. In one embodiment, the third conductive portion 33c is formed on the first insulating structure 20c and the second semiconductor layer 102c and extends to the inner sidewall 1002c to cover the side s20c of the first insulating structure 20c. The first reflective portion 403 c and the third reflective portion 405 c are formed above the first conductive portion 31 c and the third conductive portion 33 c , respectively.

[0077] In one embodiment, if Figure 3C As shown, the reflective layer 40c includes a first reflective portion 403c', a second reflective portion 404c', and a third reflective portion 405c' separated from each other. In addition, the transparent conductive layer 30c includes a first conductive portion 31c', a second conductive portion 32c', and a third conductive portion 33c' separated from each other. Therefore, the third reflective portion 405c', the second reflective portion 404c', and the first reflective portion 403c' are electrically insulated from each other. Figures 3A to 3CIn the individual light-emitting elements shown in the different embodiments, any reflective layer 40c is a discontinuous structure and is not electrically connected to each other, so that when the reflective layer 40c extends to the sidewall of the semiconductor structure 1000c to increase the second area of ​​the reflective layer 40c, leakage problems can be avoided. In this way, in the design of each light-emitting element, both the reflective area and reliability related to brightness are considered. In one embodiment, Figures 3A to 3C In the light emitting element shown, the second area of ​​the reflective layer 40c is not less than 80% of the first area of ​​the second semiconductor layer 102c, and the distance D between the first edge E1 and the second outer edge 401c is between 0 μm and 10 μm. In one embodiment, Figure 3A In the light emitting element shown, the first outer side 301c and the second outer side 401c are closer to the center of the semiconductor structure 1000c than the first edge E1. Figure 3B to Figure 3C In FIG. 1 , the first edge E1 is closer to the center of the semiconductor structure 1000c than the first outer edge 301c and the second outer edge 401c. Figure 3B to Figure 3C As shown, since the reflective layer 40c covers the sidewalls of the semiconductor structure 1000c, Figure 3B to Figure 3C The second area of ​​the reflective layer 40c of the light emitting element shown is larger than that of Figure 3A The second area of ​​the reflective layer 40c of the light emitting element is shown. Figure 3C The second area of ​​the reflective layer 40c shown may be larger than Figure 3A or Figure 3B The second area shown makes Figure 3C The brightness of the light emitting element shown is higher than Figure 3A and Figure 3B The light-emitting element shown.

[0078] In one embodiment of the present invention, the reflective layer 40c includes a plurality of sub-layers, such as a Bragg reflector (DBR) structure. In this embodiment, the material of the DBR structure can be electrically insulating or electrically conductive.

[0079] In one embodiment of the present invention, the reflective layer 40c comprises a single-layer or multi-layer structure and is made of a metal material having high reflectivity with respect to the active layer 103c, such as silver (Ag), gold (Au), aluminum (Al), titanium (Ti), chromium (Cr), copper (Cu), nickel (Ni), platinum (Pt), or alloys thereof. The "high reflectivity" referred to above means a reflectivity of 80% or greater with respect to the wavelength of light emitted by the active layer 103c.

[0080] In one embodiment of the present invention, the reflective structure further includes a Bragg reflector (DBR) structure beneath the reflective layer 40c. In one embodiment, the DBR structure is formed between the semiconductor structure 1000c and the reflective layer 40c. A connecting layer may be selectively inserted between the DBR structure and the reflective layer 40c to increase adhesion therebetween. For example, the DBR structure is connected to the reflective layer 40c via a first layer, wherein the first layer comprises silicon oxide (SiO2), and the reflective layer 40c comprises silver (Ag). In this case, the connecting layer comprises indium tin oxide (ITO), indium zinc oxide (IZO), or another material having a stronger adhesion to the reflective layer 40c than the first layer of the DBR structure.

[0081] In one embodiment of the present invention, the reflective structure further includes a barrier layer 41c covering the reflective layer 40c to prevent surface oxidation of the reflective layer 40c, which would otherwise reduce the reflectivity of the reflective layer 40c. The barrier layer 41c is made of a metal material, such as titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), zinc (Zn), chromium (Cr), or alloys thereof. The barrier layer 41c can have a single-layer structure or a multi-layer structure. When the barrier layer 41c has a multi-layer structure, it is formed by alternating a first barrier layer (not shown) and a second barrier layer (not shown), such as Cr / Pt, Cr / Ti, Cr / TiW, Cr / W, Cr / Zn, Ti / Pt, Ti / W, Ti / TiW, Ti / W, Ti / Zn, Pt / TiW, Pt / W, Pt / Zn, TiW / W, TiW / Zn, or W / Zn. In one embodiment, the material of the barrier layer 41 c includes a metal other than gold (Au) or copper (Cu).

[0082] In one embodiment of the present invention, the second insulating structure 50c of the light emitting device 1c is formed on the semiconductor structure 1000c by sputtering or evaporation. The second insulating structure 50c is formed on the semiconductor structure 1000c, the first insulating structure 20c, the transparent conductive layer 30c and the reflective layer 40c. Figure 6E FIG is a top view of the second insulating structure 50c. Figure 1 、 Figure 2 and Figure 6EAs shown, the second insulating structure 50c includes one or more first insulating openings 501c to expose the second surface 1012c of the first semiconductor layer 101c, and one or more second insulating openings 502c to expose the reflective layer 40c or the barrier layer 41c. In one embodiment, the first insulating openings 501c and the second insulating openings 502c have different widths and numbers. When viewed from above the light-emitting element 1c, the shapes of the first insulating openings 501c and the second insulating openings 502c include circular, elliptical, rectangular, polygonal, or irregular shapes. In one embodiment, the position of the first insulating opening 501c corresponds to the position of the hole 100c. In one embodiment, one of the second insulating openings 502c is located on one side of the light-emitting element 1c, opposite the first insulating opening 501c.

[0083] The material of the second insulating structure 50c includes a non-conductive material. The non-conductive material includes an organic material, an inorganic material or a dielectric material. The organic material includes Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide or fluorocarbon polymer. The inorganic material includes silicone or glass. The dielectric material includes aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x In one embodiment, the second insulating structure 50c comprises a single layer or multiple layers. In one embodiment, the second insulating structure 50c may be a Bragg reflector (DBR) structure. Specifically, the second insulating structure 50c may be made of a SiO x Sublayer and TiO x The second insulating structure 50c and the first insulating structure 20c may be the same or different.

[0084] Figure 6G FIG is a top view of the contact layer 60c. Figure 1 、 Figure 2 and Figure 6GAs shown, in one embodiment, a contact layer 60c is formed on the second insulating structure 50c and the reflective layer 40c or the barrier layer 41c. The contact layer 60c includes a first contact portion 601c, a second contact portion 602c, and a pin region 600c, which are electrically insulated from each other. Here, the first contact portion 601c is electrically connected to the first semiconductor layer 101c, the second contact portion 602c is electrically connected to the second semiconductor layer 102c, and the pin region 600c is electrically insulated from the first and second contact portions 601c and 602c. The first contact portion 601c is formed on the first surface 1011c of the first semiconductor layer 101c, surrounding the semiconductor structure 1000c and contacting the first semiconductor layer 101c, thereby forming an electrical connection. In one embodiment, the first contact portion 601c has a circumference greater than the circumference of the active layer 103c. In one embodiment, the first contact portion 601c is also formed on the second surface 1012c of the first semiconductor layer 101c, covers one or more holes 100c through a plurality of first insulating openings 501c of the second insulating structure 50c, and contacts the first semiconductor layer 101c to form an electrical connection. The pin region 600c is located on the second semiconductor layer 102c, and is electrically insulated from the first semiconductor layer 101c and the second semiconductor layer 102c by the second insulating structure 50c. In this embodiment, when viewed from above, the pin region 600c is approximately located at the center of the light-emitting element 1c. In addition, the second contact portion 602c is electrically connected to the surface 102s of the second semiconductor layer 102c through the reflective layer 40c and the transparent conductive layer 30c, so that an electrical connection is formed between the second contact portion 602c and the second semiconductor layer 102c. In this embodiment, when viewed from above of the light-emitting element 1c, the pin region 600c is located between the first contact portion 601c and the second contact portion 602c. Figure 6G As shown, the first contact portion 601c surrounds the ejector region 600c and the second contact portion 602c. In one embodiment, the ejector region 600c is electrically connected to the first contact portion 601c or the second contact portion 602c. When viewed from above, the ejector region 600c has a shape including a geometric shape, such as a rectangle or a circle. The contact layer 60c can be a single-layer structure or a multi-layer structure. The material of the contact layer 60c includes a metal, such as aluminum (Al), silver (Ag), chromium (Cr), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), or zinc (Zn).

[0085] After the contact layer 60 c is formed, a third insulating structure 70 c is located on and covers the contact layer 60 c. Figure 6H FIG is a top view of the third insulating structure 70c. Figure 1 、 Figure 2 and Figure 6HAs shown, the third insulating structure 70c includes a first opening 701c and a second opening 702c. The first opening 701c exposes the first contact portion 601c of the contact layer 60c, and the second opening 702c exposes the second contact portion 602c of the contact layer 60c. The third insulating structure 70c may include a single layer or multiple layers. When the third insulating structure 70c includes multiple layers, the third insulating structure 70c may form a Bragg reflector (DBR) structure. The material of the third insulating structure 70c includes a non-conductive material. The non-conductive material includes an organic material, an inorganic material, or a dielectric material. Organic materials include Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer. Inorganic materials include silicone or glass. Dielectric materials include aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x The materials of the first insulating structure 20c, the second insulating structure 50c, and the third insulating structure 70c can be the same or different and are selected from the above materials. The first insulating structure 20c, the second insulating structure 50c, and the third insulating structure 70c can be formed by printing, evaporation, or sputtering.

[0086] After the third insulating structure 70 c is formed, a first electrode pad 80 c and a second electrode pad 90 c are formed on the semiconductor stack 10 c. Figure 6I : is a top view of the first electrode pad 80c and the second electrode pad 90c. Figure 1 、 Figure 2 and Figure 6IAs shown, the positions and / or shapes of the first electrode pad 80c and the second electrode pad 90c substantially correspond to the positions and / or shapes of the first opening 701c and the second opening 702c of the third insulating structure 70c. The first electrode pad 80c is electrically connected to the first semiconductor layer 101c via the first opening 701c of the third insulating structure 70c and the first contact portion 601c of the contact layer 60c, and the second electrode pad 90c is electrically connected to the second semiconductor layer 102c via the second opening 702c of the third insulating structure 70c, the second contact portion 602c of the contact layer 60c, the reflective layer 40c, and the transparent conductive layer 30c. When viewed from above the light-emitting element 1c, the first electrode pad 80c and the second electrode pad 90c have the same shape, for example, a rectangular shape. However, the present invention is not limited to this. In another embodiment, the shape and size of the first electrode pad 80c can be different from those of the second electrode pad 90c, thereby distinguishing the first electrode pad 80c from the second electrode pad 90c or achieving good current distribution in the light-emitting element 1c. For example, the first electrode pad 80c can be rectangular, the second electrode pad 90c can be comb-shaped, and the area of ​​the first electrode pad 80c is larger than the area of ​​the second electrode pad 90c. In this embodiment, the first electrode pad 80c and the second electrode pad 90c comprise a single-layer or multi-layer structure. The material of the first electrode pad 80c and the second electrode pad 90c comprises a metal material, such as chromium (Cr), titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), or alloys of the above materials. When the first electrode pad 80c and the second electrode pad 90c comprise a multi-layer structure, the first electrode pad 80c and the second electrode pad 90c each comprise an upper electrode and a lower electrode (not shown). The upper electrode and the lower electrode have different functions, and the upper electrode is used for welding or wire bonding. The light-emitting element 1c can be flipped over and connected to a package substrate (not shown) by solder bonding or gold-tin eutectic bonding and through an upper electrode. The metal material of the upper electrode includes a metal material with high ductility, such as nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), copper (Cu), gold (Au), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru) or osmium (Os). The upper electrode can be a single layer, multiple layers or alloy of the above materials. In one embodiment of the present invention, the material of the upper electrode preferably includes nickel (Ni) and / or gold (Au). The function of the lower electrode is to form a stable interface with the contact layer 60c, the reflective layer 40c or the barrier layer 41c, for example, to improve the interface bonding strength between the lower electrode and the contact layer 60c, or to improve the interface bonding strength between the lower electrode and the reflective layer 40c or the barrier layer 41c.Another function of the lower electrode is to prevent solder (e.g., tin) or gold-tin alloy (AuSn) from diffusing into the reflective structure and destroying the reflectivity of the reflective structure. Therefore, the material of the lower electrode is different from that of the upper electrode. The material of the lower electrode preferably includes metal elements other than gold (Au) and copper (Cu), such as nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru) or osmium (Os). The lower electrode can be a single layer, a multilayer or an alloy of the above materials. In one embodiment of the present invention, the lower electrode preferably includes a multilayer film of titanium (Ti) and aluminum (Al) or a multilayer film of chromium (Cr) and aluminum (Al).

[0087] Figure 6A 、 Figure 6B '、 Figure 6C to Figure 6D 、 Figure 6E '、 Figure 6G to Figure 6I FIG1 is a flow chart of manufacturing a light emitting element according to another embodiment of the present invention. The main difference between the light emitting element of this embodiment and the light emitting element 1c lies in the structures of the first insulating structure 20c and the second insulating structure 50c. Figure 6B As shown, the first insulating structure 20c1 includes a surrounding insulating portion 201c and a plurality of annular covering areas 202c. Here, the surrounding insulating portion 201c includes a plurality of protrusions 2011c and a plurality of recesses 2012c. In one embodiment, the plurality of protrusions 2011c and the plurality of recesses 2012c of the surrounding insulating portion 201c are alternately arranged. Figure 3D FIG. 2 is a partial cross-sectional view of one of the protrusions 2011c of the light emitting element of this embodiment. Figure 3D and Figure 6B As shown, the surrounding insulating portion 201c is located on the first surface 1011c and surrounds the semiconductor structure 1000c. In one embodiment, a plurality of protrusions 2011c and a plurality of recesses 2012c surrounding the surrounding insulating portion 201c are alternately disposed on the first surface 1011c. Specifically, the plurality of protrusions 2011c extend from the surface 102s of the second semiconductor layer 102c and cover a portion of the first surface 1011c of the semiconductor structure 1000c, while the plurality of recesses 2012c expose other portions of the first surface 1011c. In other words, the first surface 1011c includes a first exposed area exposed by the surrounding insulating portion 201c, and the first exposed area is discontinuous.

[0088] Please refer to Figure 6E As shown in FIG. 1 , the second insulating structure 50c includes a periphery 503c. In this embodiment, the periphery 503c includes a plurality of protrusions 5031c and a plurality of recesses 5032c. Figure 3DAs shown, the second insulating structure 50c covers the first insulating structure 20c. Therefore, the second outer sidewall 1001c and a portion of the first surface 1011c covered by the first insulating structure 20c are also covered by the second insulating structure 50c. Furthermore, the plurality of protrusions 5031c and the plurality of recesses 5032c of the second insulating structure 50c are alternately arranged along the first surface 1011c of the semiconductor structure 1000c. Furthermore, in one embodiment, the shape of the periphery 503c of the second insulating structure 50c corresponds to the shape of the periphery of the first insulating structure 20c, and the first surface 1011c of the semiconductor structure 1000c is discontinuously exposed. Specifically, the shapes and positions of the plurality of protrusions 5031c and the plurality of recesses 5032c correspond to the plurality of protrusions 2011c and the plurality of recesses 2012c surrounding the insulating portion 201c, respectively. According to this rule, the first surface 1011c exposed by the multiple recessed portions 2012c of the first insulating structure 20c will also be exposed by the multiple recessed portions 5032c of the second insulating structure 50c. The first surface 1011c covered by the multiple protrusions 2011c will also be covered by the multiple protrusions 5031c. In other words, the first surface 1011c includes a second exposed area exposed by the multiple recessed portions 5032c, and the second exposed area is discontinuous. The second exposed area of ​​the first surface 1011c roughly corresponds to the first exposed area exposed by the first insulating structure 20c. Please refer to Figure 6G As shown, in this embodiment, the first contact portion 601c contacts the first surface 1011c through the multiple recessed portions 5032c of the second insulating structure 50c and the multiple recessed portions 2012c of the first insulating structure 20c. In other words, the first contact portion 601c includes a discontinuous contact area (not shown) that contacts the first surface 1011c. In this embodiment, the discontinuous contact area between the first contact portion 601c and the first surface 1011c of the semiconductor structure 1000c is beneficial to the current spreading of the light-emitting element and prevents the light-emitting element from electrical failure. Please refer to Figure 4A The following are characteristic graphs of samples A and B. Specifically, the graphs show the characteristics of a conventional light-emitting element (sample A) and a light-emitting element 1c (sample B) according to an embodiment of the present invention. Samples A and B have the same shape (rectangular) and the same chip size (35×35mil). 2), the difference is that the area of ​​the reflective layer of the conventional light-emitting element is smaller than the area of ​​the reflective layer 40c of the light-emitting element 1c. On the other hand, the distance D of the light-emitting element 1c is smaller than that of the conventional light-emitting element. In the conventional light-emitting element, the distance between the first edge of the second semiconductor layer and the second outer side of the reflective layer is 15 μm, and the distance D of the light-emitting element 1c is 6 μm. In other words, the area of ​​the reflective layer 40c of the light-emitting element 1c is larger than that of the reflective layer of the conventional light-emitting element. The ratio of the area of ​​the reflective layer 40c of the light-emitting element 1c to the area of ​​the second semiconductor layer 102c is greater than the ratio of the area of ​​the reflective layer to the area of ​​the second semiconductor layer of the conventional light-emitting element. The graph shows the power (I V2 ) compared to traditional light emitting elements, the power increased by 1.8% (ΔI V2 ), and the forward voltage of both (V f2 ) and wavelength (W d2 Therefore, a larger reflective layer 40c can improve the performance of the light-emitting element 1c.

[0089] Please refer to Figure 4B As shown, Figure 4B The graphs are the characteristics of samples C to F. Specifically, the graphs show the performance of samples C to F. Sample C is a conventional light emitting element. Sample D is a light emitting element with Figure 6B '、 Figure 6E 'and Figure 3D The light emitting element has a contact layer 60c with a discontinuous contact area as shown, and does not have Figures 1 and 2 The larger second area of ​​the reflective layer is shown. Sample E is a reflective layer having a Figures 1 and 2 The light emitting element 1c has a reflective layer 40c with a larger second area as shown. Sample F is a light emitting element having a reflective layer 40c with a larger second area as shown. Figure 6B '、 Figure 6E 'and Figure 3D The contact layer 60c with discontinuous contact areas as shown, and the contact layer 60c with discontinuous contact areas as shown Figures 1 and 2 The light-emitting element with a larger second reflective layer is shown. In other words, sample F is a light-emitting element that combines the characteristics of samples D and E. Samples D and E both outperform sample C in terms of brightness. In addition, the light-emitting element of sample F has the highest power (I V2 ).

[0090] Figure 5 FIG. 2 is a top view of a light emitting element 2c according to an embodiment of the present invention. Figure 7 To follow Figure 5 1 is a schematic cross-sectional view of a light emitting element 2c as shown along line EE'. Figures 6A and 6B 、 Figure 6C '、 Figure 6D 、 Figures 6E to 6IThe layout of the semiconductor structure 1000c, which exposes the first surface 1011c and the second surface 1012c of the first semiconductor layer 101c, the first insulating structure 20c, the transparent conductive layer 30c, the reflective layer 40c, the second insulating structure 50c, the adhesive layer 51c, the contact layer 60c, the third insulating structure 70c, and the electrode pads 80c and 90c in the light emitting element 2c of this embodiment is shown. Figures 1 and 2 The light-emitting device 1c shown differs from the light-emitting device 2c in that it further includes an adhesive layer 51c positioned between the second insulating structure 50c and the contact layer 60c. Furthermore, the transparent conductive layer 30c of the light-emitting device 2c comprises a first transparent conductive portion f30c, a second transparent conductive portion s30c, and a third transparent conductive portion t30c, which are separate from each other. In one embodiment, the second insulating structure 50c is made of silicon oxide (SiO2), and the contact layer 60c is made of silver (Ag). The adhesive layer 51c between the second insulating structure 50c and the contact layer 60c enhances adhesion between the two structures. The adhesive layer 51c prevents the contact layer 60c from falling off the second insulating structure 50c. The insertion of the adhesive layer 51c between the two structures improves the reliability of the light-emitting device 2c. The adhesive layer 51c has stronger adhesion to the second insulating structure 50c than the contact layer 60c does to the second insulating structure 50c. The material of the bonding layer 51c can be a transparent conductive material or a metal. The transparent conductive material includes a metal oxide. The metal oxide can include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium doped zinc oxide (GZO), tungsten doped indium oxide (IWO) or zinc oxide (ZnO). The metal includes platinum (Pt). However, the material of the bonding layer 51c is not limited to the above materials. In one embodiment, as Figure 6F The shape and area of ​​the adhesive layer 51c shown are similar to those shown in FIG. Figure 6EThe shape and area of ​​the second insulating structure 50c are shown. Specifically, the bonding layer 51c has one or more first bonding openings 511c corresponding to the first insulating opening 501c, and one or more second bonding openings 512c corresponding to the second insulating opening 502c. In one embodiment, the periphery 513c of the bonding layer 51c surrounds the periphery 503c of the second insulating structure 50c to be electrically connected to the first surface 1011c of the first semiconductor layer 101c. In one embodiment, the bonding layer 51c extends to the exposed portion of the semiconductor structure 1000c. Specifically, as shown in FIG. Figure 7 As shown, the adhesive layer 51c extends to the first surface 1011c and / or the second surface 1012c.

[0091] Please refer to Figure 6C 'and Figure 7 As shown, in one embodiment, the first transparent conductive portion f30c is located on the surface 102s of the second semiconductor layer 102c, the second transparent conductive portion s30c is located on the first surface 1011c of the exposed portion, and the third transparent conductive portion t30c is located on the second surface 1012c of the exposed portion in the hole 100c. The transparent conductive layer 30c is connected to the adhesive layer 51c located on the exposed portion. Figure 6C In the top view of the transparent conductive layer 30c shown, the third transparent conductive portion t30c is surrounded by the first transparent conductive portion f30c, and the first transparent conductive portion f30c is surrounded by the second transparent conductive portion s30c. The area of ​​the first transparent conductive portion f30c is larger than the areas of the second transparent conductive portion s30c and the third transparent conductive portion t30c. Specifically, from a top view, the first transparent conductive portion f30c includes a first outer periphery f30c1, the second transparent conductive portion s30c includes a second outer periphery s30c1 surrounding the first outer periphery f30c1, and the third transparent conductive portion t30c includes a third outer periphery t30c1 surrounded by the first outer periphery f30c1.

[0092] like Figure 6D and Figure 7 As shown, the reflective layer 40c is formed on the first transparent conductive portion f30c. The reflective layer 40c includes a second outer edge 401c and a second inner edge 402c surrounded by the second outer edge 401c. The reflective layer 40c neither extends beyond the first outer edge 301c and / or the first inner edge 302c of the transparent conductive layer 30c, nor extends beyond the first edge E1 and / or the second edge E2 of the semiconductor structure 1000c. In this embodiment, the second outer edge 401c is substantially aligned with the first outer edge 301c, and the second inner edge 402c is substantially aligned with the first inner edge 302c. Figure 6E and Figure 7As shown, the second insulating structure 50c is formed on the reflective layer 40c and covers the first insulating structure 20c. Figure 6E The second insulating structure 50c shown includes a plurality of protrusions 5031c and a plurality of recesses 5032c formed on the exposed portion of the semiconductor structure 1000c and covering the first surface 1011c or as shown in FIG. Figure 6C and Figure 6C ' on the transparent conductive layer 30c shown. Specifically, the plurality of protrusions 5031c and the plurality of recesses 5032c are alternately arranged on the first surface 1011c and discontinuously cover the first surface 1011c. More specifically, the plurality of protrusions 5031c cover the portions of the first surface 1011c covered by the plurality of protrusions 2011c, while the plurality of recesses 5032c expose the portions of the first surface 1011c exposed by the plurality of recesses 2012c. In one embodiment, the plurality of protrusions 5031c cover a portion of the second transparent conductive portion s30c, while the plurality of recesses 5032c expose a portion of the second transparent conductive portion s30c.

[0093] Please refer to Figure 6G As shown, similar to light-emitting device 1c, light-emitting device 2c includes a contact layer 60c having a first contact portion 601c, a second contact portion 602c, and an ejector pin region 600c. The first contact portion 601c is electrically connected to the first semiconductor layer 101c via a first bonding opening 511c, a first insulating opening 501c, a second transparent conductive portion s30c located on the first surface 1011c, and a third transparent conductive portion t30c located within the hole 100c and on the second surface 1012c. Meanwhile, the second contact portion 602c is electrically connected to the second semiconductor layer 102c via a second bonding opening 512c, a second insulating opening 502c, a reflective layer 40c, and a first transparent conductive portion f30c located on the surface 102s of the second semiconductor layer 102c. In one embodiment, the first and second contact portions 601c and 602c are made of the same material and have a multilayer structure.

[0094] In one embodiment, the first contact portion 601c includes a first portion and a second portion that covers the first portion. The first portion is made of Ag / NiTi / TiW / Pt, and the second portion is made of Ti / Al / Ti / Al / Cr / Pt. These materials are sequentially formed on the semiconductor structure 1000c from the semiconductor stack 10c to the second electrode pad 90c. In this embodiment, the second contact portion 602c also includes a first portion and a second portion similar to the first contact portion 601c. The first and second portions of the second contact portion 602c are made of the same material as the first and second portions of the first contact portion 601c. In one embodiment, the reflective structure and the first contact portion 601c are made of the same material with high reflectivity, and the reflective structure and the second contact portion 602c are made of the same material with high reflectivity. In one embodiment, the reflective structure, the first contact portion 601c, and the second contact portion 602c are made of silver (Ag).

[0095] In one embodiment, the light-emitting element 2c includes a second transparent conductive portion s30c and a third transparent conductive portion t30c between the contact layer 60c and the first semiconductor layer 101c, the first contact portion 601c and the second contact portion 602c both include silver, and the bonding layer 51c is located between the contact layer 60c and the second insulating structure 50c. Compared to the light-emitting element 2c, the conventional light-emitting element includes a first contact portion that does not contain silver and is similar to the above-mentioned sample C, for example: the material of the first contact portion of the conventional light-emitting element includes Cr / Al / Cr / Al / Cr / Pt, and is sequentially formed on the semiconductor structure 1000c. The light-emitting element 2c of this embodiment increases the reflection area in the light-emitting element 2c by the first contact portion 601c containing silver, so that the brightness of the light-emitting element 2c can be increased. The brightness of the conventional light-emitting element (I V2 ) is 923.75 mW. The brightness of the light emitting element 2c in this embodiment (I V2 ) is 965.83 mW. The brightness of the light-emitting element 2c of this embodiment is increased by 4.56% compared with the traditional light-emitting element.

[0096] Figure 8 The figure is a schematic diagram of a light-emitting device 3 according to one embodiment of the present invention. The light-emitting element of the aforementioned embodiment is mounted in a flip-chip configuration on a first pad 511 and a second pad 512 of a package substrate 51. The first pad 511 and the second pad 512 are electrically insulated by an insulating portion 53 composed of an insulating material. Flip-chip mounting is performed with the growth substrate side opposite the electrode pad surface facing upward, making the growth substrate side the primary light extraction surface. To increase the light extraction efficiency of the light-emitting device 3, a reflective structure 54 may be provided around the light-emitting element.

[0097] Figure 9FIG4 is a schematic diagram of a light-emitting device 4 according to an embodiment of the present invention. Light-emitting device 4 is a bulb lamp comprising a lampshade 602, a reflector 604, a light-emitting module 610, a lamp holder 612, a heat sink 614, a connecting portion 616, and an electrical connection element 618. Light-emitting module 610 includes a carrier 606 and a plurality of light-emitting units 608 disposed thereon. The light-emitting units 608 may be the light-emitting elements or light-emitting device 3 described in the aforementioned embodiments.

[0098] The embodiments listed in the present invention are only used to illustrate the present invention and are not used to limit the scope of the present invention. Any obvious modifications or changes made by anyone to the present invention do not depart from the spirit and scope of the present invention.

Claims

1. A light-emitting element, characterized in that: Include: A semiconductor structure comprising a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer comprises a first edge; a first insulating structure located on the second semiconductor layer and contacting the first edge, comprising a top portion located on the surface of the second semiconductor layer, a side portion located on the second outer sidewall of the second semiconductor layer, and a bottom portion located on the first surface of the first semiconductor layer, and comprising an opening on the second semiconductor layer and another opening on the first semiconductor layer; a reflective layer, located on the first insulating structure; a second insulating structure located on the reflective layer and comprising a first insulating opening exposing the first surface of the first semiconductor layer, and a second insulating opening located on the second semiconductor layer; as well as A first contact portion contacts the first semiconductor layer through the first insulating opening and the other opening to form an electrical connection. In a cross-section, the reflective layer includes a first reflective portion and a third reflective portion electrically insulated from the first reflective portion. The third reflective portion extends beyond the first edge of the second semiconductor layer and covers the top and side of the first insulating structure. The third reflective portion includes a second outer edge located between the second outer sidewall of the second semiconductor layer and the sidewall of the bottom of the first insulating structure.

2. The light-emitting element according to claim 1, wherein A gap is formed between the first reflecting portion and the third reflecting portion.

3. The light-emitting element according to claim 1, wherein Viewed from the top view of the light-emitting element, the perimeter of the first contact portion is greater than the perimeter of the active layer.

4. The light-emitting element according to claim 1, wherein The reflective layer is located between the first insulating structure and the second insulating structure. 5 . The light-emitting element as claimed in claim 1 , further comprising an adhesive layer comprising a transparent conductive material and located between the second insulating structure and the first contact portion.

6. The light-emitting element according to claim 1, further comprising a transparent conductive layer located in the opening of the first insulating structure, wherein: The reflective layer is formed on the transparent conductive layer. 7 . The light emitting device as claimed in claim 1 , further comprising a second contact portion located on the second insulating structure and electrically connected to the second semiconductor layer through the reflective layer, wherein the first contact portion surrounds the second contact portion. 8 . The light-emitting device as claimed in claim 1 , further comprising a transparent conductive layer located in the opening of the first insulating structure, wherein the transparent conductive layer comprises a first outer side closer to the first edge than the outer side of the reflective layer. 9 . The light emitting device according to claim 1 , wherein the first insulating structure comprises a Bragg reflector (DBR) structure. 10 . The light emitting device as claimed in claim 1 , further comprising a transparent conductive layer formed on the first insulating structure and the second semiconductor layer, and extending to the first edge to cover a side of the first insulating structure.

11. The light-emitting element according to claim 1, further comprising: A third insulating structure comprising a first opening and a second opening on the second insulating structure; a first electrode pad, located on the third insulating structure and electrically connected to the first semiconductor layer through the first opening; and The second electrode pad is located on the third insulating structure and is electrically connected to the second semiconductor layer through the second opening. 12 . The light emitting device as claimed in claim 1 , wherein the first surface of the first semiconductor layer is located at an outer periphery of the semiconductor structure. 13 . The light emitting device according to claim 1 , further comprising a substrate having an exposed surface surrounding an outer periphery of the semiconductor structure. 14 . The light emitting device according to claim 1 , further comprising one or more openings passing through the second semiconductor layer and the active layer to expose the first semiconductor layer.

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