Display device and method of manufacturing the same

Abstract

A display device having an optical panel with improved light extraction efficiency and light conversion efficiency and a method of manufacturing the display device are provided. The display device includes a first substrate, first to third light emitting elements disposed on the first substrate, an encapsulation layer covering the first to third light emitting elements, a first light blocking layer disposed on the encapsulation layer, the first light blocking layer including a plurality of first openings corresponding to the first to third light emitting elements, respectively, a reflective layer disposed on the first light blocking layer, the reflective layer corresponding to an inner surface of each of the plurality of first openings, a first color conversion layer, a second color conversion layer, and a light transmission layer located in the plurality of first openings, respectively, a second light blocking layer located on the first light blocking layer, the second light blocking layer including a plurality of second openings overlapping the plurality of first openings, and first to third color filter layers located in the plurality of second openings.

Description

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2020-0051048, filed on April 27, 2020, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] One or more aspects of the embodiments relate to a display device and a method of manufacturing the display device. Background Technology

[0003] With the development of various electronic devices such as mobile phones, personal digital assistants (PDAs), computers, and large-screen televisions (TVs), various types of display devices have been developed to suit them. For example, such display devices include liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays. LCDs include a backlight unit, while OLEDs emit light of different colors from various color regions. Furthermore, display devices incorporating quantum dot color conversion layers (QD-CCLs) have recently been developed. Quantum dots excited by incident light emit light with wavelengths longer than the incident light, and the lower wavelengths are primarily used as incident light.

[0004] The information disclosed in this background section is only intended to enhance the understanding of the background art, and therefore the information discussed in this background section need not constitute prior art. Summary of the Invention

[0005] One or more embodiments include a display device and a method of manufacturing the display device, the display device having an optical panel with relatively improved light extraction efficiency and light conversion efficiency, wherein the manufacturing process of the display device is relatively simplified to improve manufacturing efficiency, reduce manufacturing quality defects, and lower costs. However, these characteristics are merely exemplary characteristics, and the scope of embodiments according to this disclosure is not limited thereto.

[0006] Other aspects will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the exemplary embodiments given herein.

[0007] According to one or more example embodiments, a display device includes: a first substrate; first to third light-emitting elements disposed on the first substrate, each of the first to third light-emitting elements including a first color emitting layer; an encapsulation layer covering the first to third light-emitting elements, the encapsulation layer including at least one inorganic layer and at least one organic layer; a first light-blocking layer disposed on the encapsulation layer, the first light-blocking layer including a plurality of first openings corresponding to the first to third light-emitting elements respectively; a reflective layer disposed on the first light-blocking layer, the reflective layer corresponding to the inner surface of each of the plurality of first openings; a first color conversion layer located in the first opening corresponding to the first light-emitting element; a second color conversion layer located in the first opening corresponding to the second light-emitting element; a light transmission layer located in the first opening corresponding to the third light-emitting element; a second light-blocking layer located on the first light-blocking layer, the second light-blocking layer including a plurality of second openings superimposed on the plurality of first openings; and a first to third color filter layer located in the plurality of second openings, the first to third color filter layers being superimposed on the first color conversion layer, the second color conversion layer, and the light transmission layer respectively.

[0008] According to some example embodiments, the display device may also include a first cover layer covering the first color conversion layer, the second color conversion layer, and the light transmission layer.

[0009] According to some example embodiments, one surface of the first light-blocking layer may be in contact with the first capping layer.

[0010] According to some example embodiments, the display device may further include a second cover layer covering the first color filter layer to the third color filter layer, wherein the first cover layer and the second cover layer may sandwich the first color filter layer to the third color filter layer therebetween.

[0011] According to some example embodiments, the display device may further include a second substrate disposed above one side of the first substrate, such that the first light-emitting element to the third light-emitting element are located between the first substrate and the second substrate, wherein the second substrate may cover the first color filter layer to the third color filter layer and the second light-blocking layer.

[0012] According to some example embodiments, the reflective layer may include a surface on which irregularities are formed.

[0013] According to some example embodiments, the surface of the reflective layer may have grain boundaries or clusters.

[0014] According to some example embodiments, the reflective layer may include a metallic material, such as silver, aluminum, gold, or a combination thereof.

[0015] According to some example embodiments, the reflective layer may have a thickness of 20 nm or more and 100 nm or less, and an aspect ratio of 1 or more and 20 or less.

[0016] According to some example embodiments, each of the first color conversion layer, the second color conversion layer, and the light transmission layer may include scattering particles, wherein the first color conversion layer may also include a first quantum dot, the second color conversion layer may also include a second quantum dot, and the first quantum dot and the second quantum dot may include the same material but may have different sizes.

[0017] According to one or more example embodiments, a display device includes: a substrate; a first to a third light-emitting element disposed on the substrate, each of the first to third light-emitting elements including a first color emitting layer; a first color conversion layer disposed on the substrate and corresponding to the first light-emitting element; a second color conversion layer disposed on the substrate and corresponding to the second light-emitting element; a light-transmitting layer disposed on the substrate and corresponding to the third light-emitting element; a reflective layer surrounding each of the first color conversion layer, the second color conversion layer, and the light-transmitting layer in a plane; a first inorganic layer covering one side of each of the first color conversion layer, the second color conversion layer, and the light-transmitting layer; and a second inorganic layer covering the other side of each of the first color conversion layer, the second color conversion layer, and the light-transmitting layer, and covering the reflective layer, wherein the first inorganic layer and the second inorganic layer are in contact with each other.

[0018] According to some example embodiments, one surface of the reflective layer facing the first color conversion layer, the second color conversion layer, and the light transmission layer may include an irregular body.

[0019] According to one or more example embodiments, a method of manufacturing a display device includes the following steps: preparing a first substrate on which a first light-emitting element to a third light-emitting element is disposed, each of the first to third light-emitting elements including a first color emitting layer; forming an organic film pattern layer including a plurality of first openings on the first substrate, the plurality of first openings corresponding to the first to third light-emitting elements respectively; depositing a metal layer on the organic film pattern layer; forming a reflective layer by etching the metal layer via ion milling and attaching metal particles of the etched metal layer to the inner surface of the plurality of first openings; and forming a first color conversion layer, a second color conversion layer, and a light transmission layer respectively superimposed on the first to third light-emitting elements in the plurality of first openings.

[0020] According to some example embodiments, ion milling can be performed by accelerating ions of an inert gas and causing the ions to collide with a metal layer.

[0021] According to some example embodiments, the time required to perform ion milling can be 400 seconds or more.

[0022] According to some example embodiments, the inert gas may be selected from nitrogen, helium, argon, and mixtures thereof.

[0023] According to some example embodiments, the method may further include forming a first capping layer covering the first color conversion layer, the second color conversion layer, and the light transmission layer.

[0024] According to some example embodiments, the method may further include forming a second light-blocking layer superimposed on an organic film pattern layer on a first capping layer and forming a first color filter layer to a third color filter layer in a plurality of second openings, corresponding to a first color conversion layer, a second color conversion layer and a light transmission layer, respectively, wherein the second light-blocking layer includes the plurality of second openings superimposed on the plurality of first openings.

[0025] According to some example embodiments, the method may further include: preparing a second substrate on which a first color filter layer to a third color filter layer corresponding to a first light-emitting element to a third light-emitting element are respectively formed, wherein an organic film pattern layer may be formed on the second substrate.

[0026] According to some example embodiments, the method may also include removing the organic film pattern layer after forming the reflective layer.

[0027] These and / or other aspects will become more apparent and readily understood from the description of the exemplary embodiments, the accompanying drawings, and the claims.

[0028] These general and specific aspects can be achieved by using systems, methods, computer programs, or a combination of specific systems, methods, and computer programs. Attached Figure Description

[0029] The above and other aspects, features, and characteristics of certain exemplary embodiments disclosed will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0030] Figure 1 This is a schematic plan view illustrating a display device according to some example embodiments;

[0031] Figure 2 It is along Figure 1 A schematic cross-sectional view of the display device taken by line II-II';

[0032] Figure 3 This is a schematic cross-sectional view showing a portion of a display device according to some example embodiments;

[0033] Figures 4A to 4G This is a schematic cross-sectional view illustrating the process of manufacturing a display device according to some example embodiments;

[0034] Figure 5A and Figure 5B This is a schematic cross-sectional view illustrating some processes involved in manufacturing a display device according to some example embodiments;

[0035] Figure 6 This is a schematic cross-sectional view showing a portion of a display device according to some example embodiments;

[0036] Figure 7 This is a schematic cross-sectional view showing a portion of a display device according to some example embodiments;

[0037] Figure 8 This is a schematic cross-sectional view illustrating a display device according to some example embodiments;

[0038] Figure 9A and Figure 9B It shows the manufacturing process. Figure 8 A schematic cross-sectional view of some processes of the method for making a display device;

[0039] Figures 10A to 10C This is an image illustrating a portion of a display device according to some example embodiments;

[0040] Figure 11 It is a graph used to compare the light extraction efficiency of display devices with and without reflective layers according to some example embodiments;

[0041] Figures 12A to 12D It is a graph showing the relationship between wavelength and reflectivity of the material and thickness of the reflective layer in a display device according to some example embodiments; and

[0042] Figure 13 This is a graph showing the relationship between the ion polishing time of a metal layer and the transmittance of visible light in a manufacturing process of a display device according to some example embodiments. Detailed Implementation

[0043] Referring now to aspects of some exemplary embodiments, illustrated in the accompanying drawings, wherein the same reference numerals consistently denote the same elements. In this regard, these exemplary embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the exemplary embodiments are described below only by reference to the accompanying drawings to explain aspects of the given description. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, and c” means only a, only b, only c, both a and b, both a and c, both b and c, all or variations thereof of a, b, and c.

[0044] Because this disclosure allows for various modifications and numerous embodiments, exemplary embodiments will be shown in the accompanying drawings and described in more detail in the written description. Reference is made to the accompanying drawings, which illustrate one or more embodiments, to fully understand their advantages and features achieved through implementation. However, embodiments may take different forms and should not be construed as limited to the description set forth herein.

[0045] Example embodiments will be described in more detail below with reference to the accompanying drawings. Regardless of the drawing numbers, the same or corresponding components are given the same reference numerals, and redundant explanations are omitted.

[0046] While terms such as "first" and "second" can be used to describe various components, such components are not limited by these terms. These terms are only used to distinguish one component from another.

[0047] A statement used in the singular form may contain a statement in the plural form, unless it has a distinctly different meaning in the context.

[0048] In this specification, it will be understood that the terms “comprising,” “having,” and “including” are intended to refer to the presence of the features, quantities, steps, actions, components, parts, or combinations thereof disclosed in this specification, without excluding the possibility that one or more other features, quantities, steps, actions, components, parts, or combinations thereof may be present or added.

[0049] It will be understood that when a layer, region, or component is referred to as being "formed on" another layer, region, or component, that layer, region, or component may be formed directly or indirectly on said other layer, region, or component. That is, for example, intermediate layers, intermediate regions, or intermediate components may exist.

[0050] For ease of explanation, the dimensions of the components in the accompanying drawings may be exaggerated. In other words, because the dimensions and thicknesses of the components in the accompanying drawings are arbitrarily shown for ease of explanation, the following embodiments are not limited thereto.

[0051] When an embodiment can be implemented differently, the specific process sequence can be performed in a different order than that described. For example, two consecutively described processes can be performed substantially simultaneously or in the reverse order of their description.

[0052] In the specification, the phrase "A and / or B" means A, B, or A and B. Additionally, the phrase "at least one of A and B" means A, B, or A and B.

[0053] In the following embodiments, when layers, regions, or elements are referred to as “connections,” it will be understood that they may be directly connected, or there may be intermediate portions between layers, regions, or elements. For example, when layers, regions, or elements are referred to as “electrical connections,” they may be directly electrically connected, or layers, regions, or elements may be indirectly electrically connected and there may be intermediate portions.

[0054] The X, Y, and Z axes are not limited to the three axes of a Cartesian coordinate system and can be interpreted in a broader sense. For example, the X, Y, and Z axes can be perpendicular to each other, or they can represent different directions that are not perpendicular to each other.

[0055] Figure 1 This is a schematic plan view illustrating a display device 1 according to some example embodiments.

[0056] Reference Figure 1 The display device 1 may include a display area DA and a peripheral area PA located outside the display area DA (e.g., the periphery of the display area DA or the outer edge of the occupied area of ​​the display area DA). The display device 1 may provide an image by an array of multiple pixels PX (e.g., first pixel PX1, second pixel PX2, and third pixel PX3) arranged two-dimensionally (e.g., in a matrix arrangement) in the display area DA. The peripheral area PA is an area where no image is provided or displayed, and may completely or partially surround the display area DA. Drivers, etc., for providing electrical signals or power to the first pixel PX1, second pixel PX2, and third pixel PX3 may be arranged in the peripheral area PA. In the peripheral area PA, pads (or referred to as "soldering pads") may be arranged as areas where electronic devices or printed circuit boards can be electrically connected.

[0057] In the following description, although the display device 1 is described as including an organic light-emitting diode (OLED) as a light-emitting element, the display device 1 is not limited thereto. According to some example embodiments, the display device 1 may be an inorganic light-emitting display device (or an inorganic electroluminescent (EL) display device) such as a micro-light-emitting display (LED) or a display device such as a quantum dot light-emitting display device. For example, the emitting layer of the light-emitting element disposed in the display device 1 may include organic materials, inorganic materials, quantum dots, organic materials and quantum dots, or inorganic materials and quantum dots.

[0058] Figure 2 It is along Figure 1 A schematic cross-sectional view of display device 1 taken from line II-II'.

[0059] Reference Figure 2According to some example embodiments, the display device 1 may include first pixels PX1 to third pixels PX3. This is merely an example, and the display device 1 may include more pixels PX (see...). Figure 1 In addition, although Figure 2 The first pixel PX1 to the third pixel PX3 are shown to be adjacent to each other, but embodiments according to this disclosure are not limited thereto. That is, other components, such as wiring, may be located between the first pixel PX1 and the third pixel PX3. Therefore, for example, the first pixel PX1 and the second pixel PX2 may not be pixels positioned adjacent to each other. Furthermore, in Figure 2 In this context, the cross-sections of the first pixel PX1 to the third pixel PX3 may not be cross-sections in the same direction.

[0060] The display device 1 according to some example embodiments may include a first substrate 100. The first substrate 100 may include glass, metal, or polymer resin. When the first substrate 100 is flexible or bendable, it may include a polymer resin such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. Various modifications are possible. For example, the first substrate 100 may have a multilayer structure comprising two layers, each containing such a polymer resin, and a barrier layer between the two layers comprising an inorganic material (e.g., silicon oxide, silicon nitride, or silicon oxynitride).

[0061] The first pixel electrode 211, the second pixel electrode 221, and the third pixel electrode 231 can be located on the first substrate 100. That is, multiple light-emitting elements can be located on the first substrate 100. Figure 2 The diagram shows a first light-emitting element 210, a second light-emitting element 220, and a third light-emitting element 230 located on a first substrate 100. In addition to the light-emitting elements, a first thin-film transistor (TFT1), a second thin-film transistor (TFT2), and a third thin-film transistor (TFT3) electrically connected to the light-emitting elements may also be located on the first substrate 100. Figure 2 The OLED, acting as a light-emitting element, is shown located on a first substrate 100. The description of the OLED being electrically connected to the first thin-film transistor TFT1, the second thin-film transistor TFT2, and the third thin-film transistor TFT3 can be understood as the first pixel electrode 211, the second pixel electrode 221, and the third pixel electrode 231 being electrically connected to the first thin-film transistor TFT1, the second thin-film transistor TFT2, and the third thin-film transistor TFT3.

[0062] For reference, Figure 2In the image, the first thin-film transistor TFT1 is located in the first pixel PX1, the second thin-film transistor TFT2 is located in the second pixel PX2, and the third thin-film transistor TFT3 is located in the third pixel PX3. Additionally, as... Figure 2 As shown, each of the first thin-film transistors (TFTs) 1 to 3 can be electrically connected to the pixel electrode of the light-emitting element located in the corresponding pixel. In the following description, for convenience, the first TFT 1 and the first light-emitting element 210 connected thereto will be described, and the same description can be applied to the second TFT 2 and the second light-emitting element 220 connected thereto, and the third TFT 3 and the third light-emitting element 230 connected thereto. That is, the description of the second semiconductor layer Act2, the second gate electrode GE2, the second source electrode SE2, and the second drain electrode DE2 of the second TFT 2, as well as the description of the second pixel electrode 221, will be omitted. Similarly, the description of the third semiconductor layer Act3, the third gate electrode GE3, the third source electrode SE3, and the third drain electrode DE3 of the third TFT 3, as well as the description of the third pixel electrode 231, will be omitted.

[0063] The first thin-film transistor TFT1 may include a first semiconductor layer Act1, a first gate electrode GE1, a first source electrode SE1, and a first drain electrode DE1. The first semiconductor layer Act1 may include amorphous silicon, polycrystalline silicon, organic semiconductor materials, or oxide semiconductor materials. The first gate electrode GE1 may include various conductive materials and have various layer structures. For example, the first gate electrode GE1 may include a molybdenum (Mo) layer or an aluminum (Al) layer. Optionally, the first gate electrode GE1 may include titanium nitride (TiN). x The first source electrode SE1 and the first drain electrode DE1 may also comprise various conductive materials and have various layer structures. For example, the first source electrode SE1 and the first drain electrode DE1 may both comprise a Ti layer, an Al layer, and / or a copper (Cu) layer.

[0064] To ensure sufficient insulation between the first semiconductor layer Act1 and the first gate electrode GE1, a gate insulating layer 130 comprising an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride may be disposed between the first semiconductor layer Act1 and the first gate electrode GE1. Additionally, an interlayer insulating layer 150 comprising an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride may be disposed on the first gate electrode GE1, and a first source electrode SE1 and a first drain electrode DE1 may be disposed on the interlayer insulating layer 150. The interlayer insulating layer 150 comprising inorganic material may be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD). This description also applies to the embodiments and modifications thereof described later.

[0065] A buffer layer 110, comprising an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride, may be disposed between the first thin-film transistor TFT1 and the first substrate 100. The buffer layer 110 may be used to increase the smoothness of the upper surface of the first substrate 100, or to prevent or reduce the penetration of impurities from the first substrate 100 into the first semiconductor layer Act1 of the first thin-film transistor TFT1.

[0066] Additionally, the planarization layer 170 can be disposed on the first thin-film transistor TFT 1. For example, as... Figure 2 As shown, when the OLED is disposed on the first thin-film transistor TFT1, the planarization layer 170 can substantially planarize the upper film portion of the protective layer covering the first thin-film transistor TFT1. The planarization layer 170 may comprise an organic material such as acrylic, benzocyclobutene (BCB), or hexamethyldisiloxane (HMDSO). Figure 2 In this diagram, planarization layer 170 is shown as a single layer, but it can include multiple layers. That is, various modifications are possible.

[0067] The first light-emitting element 210 can be located on the planarization layer 170 on the first substrate 100. A stacked structure including a first pixel electrode 211, an intermediate layer 203, and a counter electrode 205 can form the first light-emitting element 210. As the first light-emitting element 210, a material such as... Figure 2 The image shows an OLED. OLEDs can emit light of a first color, and the emitting area of ​​an OLED corresponds to a pixel (PX).

[0068] For example, in the case of the first pixel PX1, the OLED may have, for example, a first pixel electrode 211, a counter electrode 205, and an intermediate layer 203 located between the first pixel electrode 211 and the counter electrode 205 and including an emission layer. The first pixel electrode 211 is as follows... Figure 2 The first pixel PX1 is shown to contact one of the first source electrode SE1 and the first drain electrode DE1 through an opening formed in the planarization layer 170, and is thus electrically connected to the first thin-film transistor TFT1. The second pixel PX2 may also have a second pixel electrode 221, and the third pixel PX3 may also have a third pixel electrode 231. Each of the first pixel electrodes 211 to the third pixel electrode 231 includes a light-transmitting conductive layer and a reflective layer. The light-transmitting conductive layer includes a light-transmitting conductive oxide such as ITO, In2O3, or IZO, and the reflective layer includes a metal such as Al or Ag. For example, each of the first pixel electrodes 211 to the third pixel electrode 231 may have a three-layer structure of ITO / Ag / ITO.

[0069] An intermediate layer 203, including the emitting layer, may be integrally formed across the first pixel electrode 211 to the third pixel electrode 231. A counter electrode 205 on the intermediate layer 203 may also be integrally formed across the first pixel electrode 211 to the third pixel electrode 231. The counter electrode 205 may include a light-transmitting conductive layer comprising ITO, In2O3, or IZO, and may also include a semi-transparent layer comprising a metal such as Al or Ag. For example, the counter electrode 205 may include a semi-transparent layer comprising Mg and Ag.

[0070] A pixel defining layer 190 may be disposed on the planarization layer 170. The pixel defining layer 190 has an opening corresponding to each pixel (i.e., at least the central portion of each of the first pixel electrode 211 to the third pixel electrode 231 is exposed through its opening), thereby defining the pixel. Additionally, in Figure 2 In the case shown, the pixel defining layer 190 increases the distance between the edge of each of the first pixel electrode 211 to the third pixel electrode 231 and the counter electrode 205, thereby preventing electric arcing or the like at the edge of each of the first pixel electrode 211 to the third pixel electrode 231. The pixel defining layer 190 may include an organic material such as polyimide or HMDSO.

[0071] The intermediate layer 203 may include a low molecular weight material or a high molecular weight material (or a polymer material). When the intermediate layer 203 includes a low molecular weight material, the intermediate layer 203 may have a structure in which the hole injection layer (HIL), hole transport layer (HTL), emitter layer (EML), electron transport layer (ETL), and electron injection layer (EIL) are stacked in a single structure or a composite structure, and may be formed by vacuum deposition.

[0072] When the intermediate layer 203 comprises a high molecular weight material, it may have a structure including an HTL and an EML. In this case, the HTL may include PEDOT, and the EML may include a high molecular weight material such as polyphenylene oxide (PPV) or polyfluorene. The intermediate layer 203 may be formed by screen printing, inkjet printing, vapor deposition, or laser-induced thermal imaging (LITI). The intermediate layer 203 is not limited to these methods and may have various structures according to embodiments of this disclosure.

[0073] As described above, the intermediate layer 203 may include a layer integrally formed over the first pixel electrode 211 to the third pixel electrode 231. However, according to some example embodiments, the intermediate layer 203 may include a layer patterned to correspond to each of the first pixel electrode 211 to the third pixel electrode 231. In any case, the intermediate layer 203 includes a first color emitting layer. The first color emitting layer may be integrally formed over the first pixel electrode 211 to the third pixel electrode 231. If desired, the first color emitting layer may be patterned to correspond to each of the first pixel electrode 211 to the third pixel electrode 231. The first color emitting layer may emit light, for example, having a wavelength between about 450 nm and about 495 nm.

[0074] Counter electrode 205 may be located on intermediate layer 203 to correspond to first pixel electrode 211 to third pixel electrode 231. Counter electrode 205 may be integrally formed in multiple OLEDs.

[0075] Because OLEDs can be easily damaged by moisture or oxygen from the outside, the encapsulation layer 300 can cover the OLEDs to protect them.

[0076] The encapsulation layer 300 can be disposed on the counter electrode 205. The OLED can be covered by the encapsulation layer 300. The encapsulation layer 300 may include a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 therebetween.

[0077] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may each comprise one or more inorganic insulating materials. The inorganic insulating materials may include aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and / or silicon oxynitride. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may be formed by chemical vapor deposition.

[0078] The organic encapsulation layer 320 may include polymeric materials. Examples of polymeric materials may include acrylic resins, epoxy resins, polyimides, and polyethylene. For example, the organic encapsulation layer 320 may include acrylic resins such as polymethyl methacrylate or polyacrylic acid. The organic encapsulation layer 320 may be formed by curing monomers or applying a polymer.

[0079] The stacked structure from the first substrate 100 to the first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230 can be referred to as display layer 10. Display layer 10 can generate incident light (hereinafter also referred to as blue incident light) Lib that is incident on the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453, which will be described in more detail later. The incident light Lib emitted from display layer 10 can travel through encapsulation layer 300 to the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453.

[0080] According to some example embodiments, the display device 1 may include a first light blocking layer 410, a reflective layer 430, a first color conversion layer 451, a second color conversion layer 452, a light transmission layer 453, a first capping layer 470, a second light blocking layer 510, a first color filter layer 531, a second color filter layer 532, a third color filter layer 533, and a second capping layer 550 disposed on the encapsulation layer 300.

[0081] The first light-blocking layer 410 may include a first opening 410OP corresponding to the first light-emitting element 210, the second light-emitting element 220 and the third light-emitting element 230 respectively.

[0082] The first light-blocking layer 410 can be of various colors, including black or white. For example, the first light-blocking layer 410 can be black and can include a black matrix. The first light-blocking layer 410 can include a light-blocking material, which can include an opaque inorganic insulating material (such as chromium oxide or molybdenum oxide) or an opaque organic insulating material (such as black resin). As another example, the first light-blocking layer 410 can include an organic insulating material such as white resin.

[0083] As described below, the first light blocking layer 410 can prevent color mixing between light beams converted or transmitted in the adjacent first color conversion layer 451, second color conversion layer 452 and light transmission layer 453.

[0084] The first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 can be respectively arranged in the first opening 410OP of the first light blocking layer 410, and can respectively correspond to the first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230. The first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 can be spaced apart from each other at regular intervals, and the first light blocking layer 410 can be located between them.

[0085] The first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 can convert the incident light Lib generated in the display layer 10 into light of a specific color or transmit the incident light Lib, and can emit color-converted light or transmitted light toward the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533. The light converted or transmitted by the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 can be one of red light, green light, and blue light.

[0086] For example, the incident light Lib can be blue light with a wavelength of 400 nm or greater and less than 495 nm, and the light emitted through the first color filter layer 531, the second color filter layer 532 and the third color filter layer 533 can include red light with a wavelength of 580 nm or greater and less than 750 nm, green light with a wavelength of 495 nm or greater and less than 580 nm and blue light with a wavelength of 400 nm or greater and less than 495 nm.

[0087] Incident light Lib can be converted into red light by the first color conversion layer 451. The red light can be emitted toward the first color filter layer 531, and the light passing through the first color filter layer 531 can be emitted outwards. Incident light Lib can be converted into green light by the second color conversion layer 452. The green light can be emitted toward the second color filter layer 532, and the light passing through the second color filter layer 532 can be emitted outwards. Incident light Lib can be transmitted through the light transmission layer 453 without color conversion. The transmitted light can be emitted toward the third color filter layer 533, and the light passing through the third color filter layer 533 can be emitted outwards.

[0088] Therefore, when the incident light Lib emitted from the display layer 10 passes through the first color conversion layer 451, the second color conversion layer 452 and the light transmission layer 453, the incident light Lib is converted into green light or red light or transmitted without color conversion, thereby displaying a color image.

[0089] The reflective layer 430 may be disposed on the inner surface of each of the first openings 410OP in the first light-blocking layer 410. The reflective layer 430 may be located in a non-emitting region and may be arranged not to overlap with the emitting region. The reflective layer 430 may include apertures overlapping with the first openings 410OP. Incident light Lib may travel through the apertures of the reflective layer 430.

[0090] According to some example embodiments, the reflective layer 430 may correspond to the inner surface of each of the first openings 410OP of the first light-blocking layer 410. The reflective layer 430 may be disposed only on the inner surface of each of the first openings 410OP, thus the reflective layer 430 may be between the first light-blocking layer 410 and the first color conversion layer 451, between the first light-blocking layer 410 and the second color conversion layer 452, and between the first light-blocking layer 410 and the light-transmitting layer 453. The reflective layer 430 may expose the portion of the encapsulation layer 300 overlapping with the first openings 410OP and a surface of the first light-blocking layer 410 facing the first capping layer 470, which will be described later. Therefore, the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 may all contact the second inorganic encapsulation layer 330 of the encapsulation layer 300, and the first light-blocking layer 410 may contact the first capping layer 470, which will be described later.

[0091] The reflective layer 430 may include a surface on which irregularities are formed. The reflective layer 430 may include a metallic material with excellent reflectivity, such as silver (Ag), aluminum (Al), gold (Au), or combinations thereof. Light reaching the reflective layer 430 can be reflected from its surface. As a comparative example, without the reflective layer 430, when some incident light Lib travels toward the inner surface of the first opening 410OP of the first light-blocking layer 410, some of the incident light Lib may be absorbed and disappear, thus potentially causing optical loss. However, according to some example embodiments, the reflective layer 430 is disposed on the inner surface of the first opening 410OP, so even if some incident light Lib travels toward the inner surface of the first opening 410OP, some of the incident light Lib is reflected back by the reflective layer 430, thus reducing light loss and improving the light extraction efficiency and brightness of the display device 1.

[0092] Furthermore, since the color of light is not converted by the first color conversion layer 451 and the second color conversion layer 452 (described later) and travels toward the inner surface of the first opening 410OP, it is reflected back from the reflective layer 430. Therefore, the quantum dots in the first color conversion layer 451 and the second color conversion layer 452 can be photoexcited, and the color of the light can be converted. This operation improves the light conversion efficiency.

[0093] The first capping layer 470 may be disposed on the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453. The first capping layer 470 may be formed to cover the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453. The first capping layer 470 may include an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride.

[0094] The first capping layer 470 and the encapsulation layer 300 can sandwich the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 between them. See below for reference. Figure 3 As described, both the first color conversion layer 451 and the second color conversion layer 452 may comprise quantum dots. Because quantum dots are composed of nanoparticles, they may degrade due to reactions with moisture and oxygen. Therefore, the first capping layer 470 and the encapsulation layer 300 can cover the first color conversion layer 451 and the second color conversion layer 452 above and below, respectively, preventing moisture and oxygen from entering the quantum dots within the first color conversion layer 451 and the second color conversion layer 452.

[0095] The second light-blocking layer 510 may be disposed on the first cover layer 470. The second light-blocking layer 510 may include a second opening 510OP that is superimposed on the first opening 410OP. The second light-blocking layer 510 may include a light-blocking material. The light-blocking material may include an opaque inorganic insulating material (such as chromium oxide or molybdenum oxide) or an opaque organic insulating material (such as black resin), and may block light emission to the outside of the emitting area, thereby preventing light leakage in the display device 1.

[0096] The first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 can each be located in the second opening 510OP of the second light-blocking layer 510. For example, the first color filter layer 531 can be located in the second opening 510OP corresponding to the first light-emitting element 210, the second color filter layer 532 can be located in the second opening 510OP corresponding to the second light-emitting element 220, and the third color filter layer 533 can be located in the second opening 510OP corresponding to the third light-emitting element 230. According to some example embodiments, some of the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 can be arranged on the second light-blocking layer 510.

[0097] The first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 can be organic patterns comprising dyes or pigments. The first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 can each comprise pigments or dyes of different colors and selectively transmit only light of the corresponding color. For example, the first color filter layer 531 can selectively transmit only red light by comprising red pigments or dyes, the second color filter layer 532 can selectively transmit only green light by comprising green pigments or dyes, and the third color filter layer 533 can selectively transmit only blue light by comprising blue pigments or dyes.

[0098] When considering the amount of light of various colors emitted from the display device 1, the thickness of the third color filter layer 533 can be greater than the thickness of the first color filter layer 531 and the second color filter layer 532.

[0099] As another example, the second light-blocking layer 510 may comprise the same material as the third color filter layer 533 and may be formed using the same process as the third color filter layer 533. In this case, the first color filter layer 531 may be located in the second opening 510OP of the second light-blocking layer 510 corresponding to the first light-emitting element 210, and the second color filter layer 532 may be located in the second opening 510OP of the second light-blocking layer 510 corresponding to the second light-emitting element 220. The second opening 510OP may not be formed at the position corresponding to the third light-emitting element 230, and a portion of the second light-blocking layer 510 may serve as the third color filter layer 533. The portion of the second light-blocking layer 510 disposed between the first color filter layer 531 and the second color filter layer 532 can prevent color mixing between light beams converted in adjacent first color conversion layers 451 and 452.

[0100] The second capping layer 550 may be disposed on the second light-blocking layer 510. The second capping layer 550 may be formed to cover the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533. The second capping layer 550 may include an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride.

[0101] Light emitted from the display layer 10 can pass through the light-blocking materials of the first light-blocking layer 410 and the second light-blocking layer 510 without penetrating, and can only pass through the area where the first opening 410OP of the first light-blocking layer 410 and the second opening 510OP of the second light-blocking layer 510 overlap. Therefore, the area where the first opening 410OP and the second opening 510OP overlap can be defined as the emitting area, and the area where the light-blocking materials of the first light-blocking layer 410 and the second light-blocking layer 510 are positioned can be defined as the non-emitting area.

[0102] Figure 3 This is a schematic cross-sectional view showing a portion of a display device according to some example embodiments.

[0103] Reference Figure 3 The first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 can be disposed in the display device 1 according to some example embodiments (see Figure 2 )middle.

[0104] For example, the first color conversion layer 451 can convert blue incident light Lib into red light Lr. To this end, the first color conversion layer 451 may include a first photosensitive polymer 451a in which first quantum dots 451b are dispersed.

[0105] The first photosensitive polymer 451a can be an organic material with light-transmitting properties, such as polysiloxane resin and epoxy resin.

[0106] The first quantum dot 451b is excited by blue incident light Lib and isotropically emits red light Lr with a wavelength longer than that of blue light. The first quantum dot 451b may include group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV compounds, or combinations thereof.

[0107] The first scattering particles 451c can also be dispersed in the first photosensitive polymer 451a. The first scattering particles 451c can scatter the blue incident light Lib that is not absorbed by the first quantum dot 451b, thereby exciting more first quantum dots 451b and thus improving the color conversion efficiency of the first color conversion layer 451. The first scattering particles 451c may include, for example, titanium dioxide (TiO2) particles or metal particles.

[0108] For example, the second color conversion layer 452 can convert blue incident light Lib into green light Lg. The second color conversion layer 452 may include a second photosensitive polymer 452a, the second photosensitive polymer 452a having second quantum dots 452b dispersed therein, and second scattering particles 452c may be dispersed together with the second quantum dots 452b in the second photosensitive polymer 452a, thereby improving the color conversion efficiency of the second color conversion layer 452.

[0109] The second photosensitive polymer 452a may comprise the same material as the first photosensitive polymer 451a, and the second scattering particle 452c may comprise the same material as the first scattering particle 451c. The second quantum dot 452b may comprise a group II-VI compound, a group III-V compound, a group IV-VI compound, a group IV compound, or a combination thereof. That is, the second quantum dot 452b may comprise the same material as the first quantum dot 451b. However, the size of the second quantum dot 452b may be smaller than the size of the first quantum dot 451b. Therefore, the second quantum dot 452b can be excited by blue incident light Lib and emit wavelengths longer than the wavelength of blue light, and can isotropically emit green light Lg with wavelengths shorter than the wavelength of red light Lr.

[0110] The light-transmitting layer 453 may include a third photosensitive polymer 453a in which third scattering particles 453c are dispersed. That is, the light-transmitting layer 453 does not include individual quantum dots that can be excited by blue incident light Lib. Similar to the first photosensitive polymer 451a, the third photosensitive polymer 453a may include an organic material with light-transmitting properties, and the third scattering particles 453c may include the same material as the first scattering particles 451c. Therefore, blue incident light Lib incident on the light-transmitting layer 453 can be transmitted through the light-transmitting layer 453 without color change; thus, the light emitted through the light-transmitting layer 453 can be blue light Lb. However, the blue incident light Lib can be scattered inside the light-transmitting layer 453 and emitted to the outside by the third scattering particles 453c. The light-transmitting layer 453 can transmit blue incident light Lib without changing its color, thereby achieving high light efficiency.

[0111] Figures 4A to 4G This is a schematic cross-sectional view illustrating the process of manufacturing a display device according to some example embodiments. Figures 4A to 4G It can be shown that the manufacturing process is being carried out. Figure 2 A cross-sectional view of the process of the method for display device 1.

[0112] Reference Figure 4A First, a display layer 10 can be prepared, comprising a first substrate 100 on which a first light-emitting element 210, a second light-emitting element 220, and a third light-emitting element 230 are disposed. An encapsulation layer 300 may have already been formed on the display layer 10.

[0113] In order to form a first light-blocking layer 410 on the first substrate 100, including first openings 410OP corresponding to the first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230 respectively, an organic film 410m can be applied to the entire surface of the encapsulation layer 300. For the process of applying the organic film 410m, inkjet printing, spin coating, or spray coating can be used.

[0114] Reference Figure 4B An organic pattern layer (also referred to as an organic film pattern layer) can be formed in the organic film 410m, with openings corresponding to the first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230, respectively. In this case, the organic pattern layer can be the first light-blocking layer 410, and the opening can be the first opening 410OP of the first light-blocking layer 410. Photolithography can be used as an example in the process of forming the organic pattern layer. As another example, nanoimprint lithography can be used. As described above, it can be achieved by referring to... Figure 4A and Figure 4BThe described process forms a first light-blocking layer 410 including a first opening 410OP corresponding to the first light-emitting element 210, the second light-emitting element 220 and the third light-emitting element 230 respectively.

[0115] Reference Figure 4C To form a reflective layer 430 on the first light-blocking layer 410, a metal layer 430m can first be formed on the entire surface of the organic patterned layer. Any method can be used to form the metal layer 430m, as long as it is capable of depositing metal. For example, chemical vapor deposition, atomic layer deposition, sputtering, electrical discharge machining, plasma deposition, thermochemical vapor deposition, and electron beam deposition can be used as methods for forming the metal layer 430m. According to some example embodiments, sputtering or electron beam deposition can be used to precisely deposit the metal layer 430m.

[0116] The metal layer 430m may comprise a reflective metallic material such as Ag, Al, Au, or combinations thereof. The thickness of the metal layer 430m may be greater than the thickness of the final reflective layer 430. According to some example embodiments, the metal layer 430m may be deposited to a thickness of 20 nm or greater and 140 nm or less.

[0117] Reference Figure 4D By removing a portion of the metal layer 430m, a metal layer 430m can be left on the inner surface of the opening of the organic patterned layer (i.e., the inner surface of the first opening 410OP of the first light-blocking layer 410). This forms a reflective layer 430 covering the inner surface of the first opening 410OP. According to some example embodiments, the process of removing a portion of the metal layer 430m may include etching the metal layer 430m by ion milling. Additionally, when etching the metal layer 430m located at the bottom of the first opening 410OP, metal particles separated from the metal layer 430m can adhere to the inner surface of the first opening 410OP to form the reflective layer 430. The thickness of the finally formed reflective layer 430 can be 20 nm or more and 100 nm or less, and the aspect ratio of the reflective layer 430 can be 1 or more and 20 or less. Reference will be made below. Figure 5A and Figure 5B The process for forming the reflective layer 430 is described in more detail.

[0118] Reference Figure 4EA first color conversion layer 451, a second color conversion layer 452, and a light transmission layer 453 can be formed in the first opening 410OP of the first light blocking layer 410. The first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 can be stacked with the first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230, respectively. Because the reflective layer 430 is formed only on the inner surface of the first opening 410OP, each of the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 can contact the encapsulation layer 300 located on one side of it.

[0119] The first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 can be formed by spin coating or inkjet printing. Spin coating or inkjet printing can reduce the amount of wasted photosensitive polymer, scattering particles, and quantum dot forming materials.

[0120] Reference Figure 4F A first capping layer 470 can be formed to cover the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453. The first capping layer 470 can be integrally distributed across the entire surface of the first substrate 100. The first capping layer 470 can be located on the first light blocking layer 410. For example, because the reflective layer 430 is only disposed on the inner surface of the first opening 410OP of the first light blocking layer 410, the first capping layer 470 can contact one surface of the first light blocking layer 410 facing the first capping layer 470. Additionally, the first capping layer 470 can contact one surface of each of the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 facing the first capping layer 470.

[0121] The first capping layer 470 can be formed using methods such as chemical vapor deposition. For example, a low-temperature chemical vapor deposition method at about 200°C or lower can be used to prevent damage to the earlier formed first color conversion layer 451, second color conversion layer 452, and light transmission layer 453.

[0122] Reference Figure 4G A second light-blocking layer 510, which is superimposed on the first light-blocking layer 410 and includes a second opening 510OP superimposed on the first opening 410OP, can be formed on the first cover layer 470. Subsequently, a first color filter layer 531, a second color filter layer 532, and a third color filter layer 533, respectively corresponding to the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453, can be formed in the second opening 510OP.

[0123] Any method can be used to form the second light-blocking layer 510, as long as it is a method capable of forming a polymer layer. For example, the second light-blocking layer 510 can be formed by applying a material for the second light-blocking layer 510 onto the first capping layer 470 and subsequently forming the second opening 510OP at positions corresponding to the first opening 410OP. For example, the method of applying the material for the second light-blocking layer 510 can be inkjet printing, spin coating, or spray coating. Furthermore, the second opening 510OP can be formed by, for example, a photolithography process.

[0124] After the second light-blocking layer 510 is formed, a material for a color filter can be filled into the second opening 510OP of the second light-blocking layer 510 to form a first color filter layer 531, a second color filter layer 532, and a third color filter layer 533. For example, the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 can be formed by inkjet printing, spin coating, or spray coating.

[0125] Additionally, a second capping layer 550 can be formed on the second light-blocking layer 510 and the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533. The second capping layer 550 can contact the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533. The second capping layer 550 can be formed using methods such as chemical vapor deposition. For example, a low-temperature chemical vapor deposition method at about 200°C or lower can be used to prevent damage to the earlier formed first color filter layer 531, the second color filter layer 532, and the third color filter layer 533.

[0126] As mentioned above, it can be done by referring to Figures 4A to 4G The described process is used to provide a display device 1 according to some example embodiments (see Figure 2 ).

[0127] Figure 5A and Figure 5B This is a schematic cross-sectional view illustrating some processes involved in manufacturing a display device according to some example embodiments. Specifically, Figure 5A and Figure 5B This is a schematic cross-sectional view illustrating the process of forming the reflective layer of the optical panel of a display device. Figure 5A and Figure 5B A cross-section of a portion of the first light-blocking layer is shown.

[0128] Reference Figure 5AFirst, a metal layer 430m can be formed in the first opening 410OP of the first light-blocking layer 410, and an etching process can be used to remove the metal layer 430m formed on the bottom of the first opening 410OP. According to some example embodiments, the etching process can use ion polishing. Ion polishing can be performed by accelerating ions of an inert gas to continuously collide the accelerated ions (Ion) with the surface of the metal layer 430m. The inert gas can be selected from nitrogen, helium, argon, or mixtures thereof. In this case, a voltage difference can be used to accelerate the ions.

[0129] To form the reflective layer 430 simultaneously with etching the metal layer 430m, ion bombardment can be used. When accelerated ions (Ion) collide with and physically bombard the metal particles present on the surface of the metal layer 430m, the bombarded metal particles P can be separated from the surface of the metal layer 430m. The metal particles P separated from the metal layer 430m can be ejected at various angles, and some of them can adhere to the inner surface of the first opening 410OP.

[0130] Reference Figure 5B Through continuous ion milling over a period of time, the metal layer 430m located at the bottom of the first opening 410OP can be removed. Simultaneously, metal particles P separated from the metal layer 430m can continuously adhere to and accumulate on the inner surface of the first opening 410OP. Thus, a reflective layer 430 formed by the metal particles P can be formed on the inner surface of the first opening 410OP. Irregularities caused by the metal particles P can be formed on the surface 430S of the reflective layer 430.

[0131] As a comparative example, when a reflective layer is formed using a photolithography process with wet etching, manufacturing costs may increase due to the use of expensive masks, and manufacturing and quality defects may occur due to mask misalignment and damage to the reflective layer 430 (due to damage to the reflective layer 430 caused by wet etching). Additionally, there is the problem of complex processes and therefore potentially excessively high manufacturing costs.

[0132] However, in the case where the reflective layer 430 is formed using ion polishing and ion bombardment according to some example embodiments, a mask process is not required. Therefore, manufacturing costs can be reduced and mask misalignment problems are avoided. Additionally, damage to the reflective layer 430 can be prevented, reducing manufacturing quality defects. Furthermore, complex photolithography processes can be simplified, resulting in cost savings.

[0133] Furthermore, in some example embodiments where the reflective layer is formed using ion milling and ion bombardment, the surface 430S of the reflective layer 430 may need to include an irregular body, thereby allowing light reaching the reflective layer 430 to be diffusely reflected. Because light is diffusely reflected at various angles, quantum dots in a wider region of the color conversion layer can be excited by the reflected light, and colors can be converted. This improves light conversion efficiency.

[0134] Figure 6 This is a schematic cross-sectional view showing a portion of a display device according to some example embodiments. References will be omitted. Figure 3 The descriptions are structurally identical, and the following descriptions will focus primarily on the differences.

[0135] Reference Figure 6 The width W1 of the first opening 410OP of the first light-blocking layer 410 can be reduced from the first substrate 100 toward the light emission direction (i.e., the +Z direction). Therefore, when forming the above reference... Figure 4B When describing the organic patterned layer, the organic patterned layer can be formed such that the width W2 of the portion of the first light-blocking layer 410 located between adjacent first openings 410OP increases in the +Z direction.

[0136] pass Figure 6 With this construction, when the reflective layer 430 is formed using ion milling and ion bombardment, it can be formed more uniformly on the inner surface of the first opening 410OP. Because the width W1 of the first opening 410OP narrows in the +Z direction, metal particles separated from the metal layer 430m deposited on the encapsulation layer 300 can reach the inner surface of the first opening 410OP more effectively. Therefore, the metal particles can adhere more uniformly to the inner surface of the first opening 410OP. This improves the uniformity of the thickness of the reflective layer 430 and ensures optimal reflectivity throughout the entire reflective layer 430.

[0137] Figure 7 This is a schematic cross-sectional view showing a portion of a display device according to some example embodiments. References will be omitted. Figure 3 The descriptions are structurally identical, and the following descriptions will focus primarily on the differences.

[0138] Reference Figure 7 The display device may include a reflective layer 430, which surrounds each of a first color conversion layer 451, a second color conversion layer 452, and a light transmission layer 453 disposed on the display layer 10 in a plane. The second inorganic encapsulation layer 330 of the encapsulation layer 300 (see...) Figure 2The first capping layer 470 can cover one side of each of the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 facing the first substrate 100. The first capping layer 470 can cover the other side of each of the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453, and also cover the reflective layer 430. The light blocking layer may not be disposed between adjacent reflective layers 430, therefore, the first capping layer 470 and the second inorganic encapsulation layer 330 can be in contact with each other between the reflective layers 430.

[0139] This can be achieved through the first light-blocking layer 410 (see...) Figure 6 The first opening of 410OP (see) Figure 6 After forming a reflective layer 430 on the inner surface of the light-blocking layer 410, the removal of the first light-blocking layer 410 is further performed (see...). Figure 6 This structure is provided by omitting the first light-blocking layer 410 (see process 410). Figure 6 This reduces the spacing between the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453, thus providing a high-resolution display device.

[0140] Figure 8 This is a schematic cross-sectional view illustrating a display device 1 according to some example embodiments. References will be omitted. Figure 3 The descriptions are structurally identical, and the following descriptions will focus primarily on the differences.

[0141] Reference Figure 8 The display device 1 may include a second substrate 600 facing the first substrate 100. The second substrate 600 may include glass, metal or polymer resin.

[0142] The second substrate 600 may be disposed above one side of the first substrate 100, such that the first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230 are located between the second substrate 600 and the first substrate 100. The second substrate 600 may cover the second light-blocking layer 510 and the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533. It is understood that the second light-blocking layer 510 and the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 are formed on one surface 600a of the second substrate 600, and the surface 600a may be the surface of the second substrate 600 facing the first substrate 100, whichever of the two surfaces of the second substrate 600 is facing the first substrate 100.

[0143] For example, a first capping layer 470, a first light-blocking layer 410, a reflective layer 430, a first color conversion layer 451, a second color conversion layer 452, a light-transmitting layer 453, and a third capping layer 350 can be disposed on a first color filter layer 531, a second color filter layer 532, and a third color filter layer 533. In this case, the display layer 10 can be directly bonded to the second substrate 600 and the stacked structure formed on the second substrate 600 via a transparent adhesive layer. The stacked structure includes a first color filter layer 531, a second color filter layer 532 and a third color filter layer 533, a second light-blocking layer 510, a first capping layer 470, a first color conversion layer 451, a second color conversion layer 452, a light-transmitting layer 453, a reflective layer 430, a first light-blocking layer 410, and a third capping layer 350. Optionally, a filling layer including a transmissive insulating layer or an air layer can be further disposed between the display layer 10 and the stacked structure.

[0144] As another example, in the stacked structure, the second light blocking layer 510, the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 can be stacked on the second substrate 600, and the first light blocking layer 410, the reflective layer 430, the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 can be stacked on the display layer 10 and the encapsulation layer 300.

[0145] Figure 9A and Figure 9B It shows the manufacturing process. Figure 8 A schematic cross-sectional view of some processes of the method for display device 1. Figure 9A and Figure 9B It shows that Figure 8 The second substrate 600 is inverted 180 degrees.

[0146] Reference Figure 9A First, a second substrate 600 can be prepared, on which a first color filter layer 531, a second color filter layer 532, and a third color filter layer 533, respectively corresponding to the first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230, are formed. According to some example embodiments, a second light-blocking layer 510 including a second opening 510OP can be formed on one surface 600a of the second substrate 600, and then the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 can be formed in the second opening 510OP. Then, a first capping layer 470 can be formed on the second light-blocking layer 510 and the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533. The method for forming the second light-blocking layer 510, the first color filter layer 531, the second color filter layer 532, the third color filter layer 533, and the first capping layer 470 can be the same as described above. Figure 4G The methods used to describe them are the same.

[0147] Reference Figure 9B A first light-blocking layer 410, a reflective layer 430, a first color conversion layer 451, a second color conversion layer 452, and a light-transmitting layer 453 can be formed on the first capping layer 470. The method and sequence for forming the first light-blocking layer 410, the reflective layer 430, the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 can be the same as described above. Figures 4A to 4E The methods and order of description are the same.

[0148] Subsequently, a third capping layer 350 can be formed on the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453. The third capping layer 350 may comprise an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride. The third capping layer 350 can be arranged facing the first capping layer 470 such that the first color conversion layer 451, the second color conversion layer 452, and the light transmission layer 453 are sandwiched between the third capping layer 350 and the first capping layer 470. Thus, the first color conversion layer 451 and the second color conversion layer 452 can be covered by the third capping layer 350, preventing moisture and oxygen from flowing into the quantum dots in the first and second color conversion layers 451 and 452.

[0149] Figures 10A to 10C This is an image showing a portion of a display device according to some example embodiments. Figures 10A to 10C The image can be with Figure 4D This corresponds to a part of the display device in the process.

[0150] Figure 10A A portion of the first light-blocking layer 410, formed on the display layer 10 and including the first opening 410OP, is shown. Because the color conversion layer or light-transmitting layer has not yet been formed in the first opening 410OP, the encapsulation layer 300 is visible in the area exposed by the first opening 410OP. Figure 10A In the diagram, the first opening 410OP is shown as a rectangle with rounded vertices on a plane, but this is just an example. The first opening 410OP and the first light-blocking layer 410 can have various shapes and be arranged differently.

[0151] Figure 10B A portion of the reflective layer 430 formed on the inner surfaces of the first light-blocking layer 410 and the first opening 410OP is shown. Figure 10B Can be with Figure 10A Region A corresponds to this. (Refer to...) Figure 10BThe reflective layer 430 can be disposed on the inner surface of the first opening 410OP. According to some example embodiments, the reflective layer 430 can have a thickness of 20 nm or more and 100 nm or less, and can have an aspect ratio of 1 or more and 20 or less. The reflective layer 430 can have a certain thickness and a high aspect ratio to ensure high reflectivity, while sufficiently ensuring the area in which the color conversion layer or light transmission layer is disposed.

[0152] Figure 10C A portion of the surface 430S of the reflective layer 430 is shown. Figure 10C Can be with Figure 10B Region B corresponds to this. (Refer to...) Figure 10C According to some example embodiments, the reflective layer 430 may include Ag. The reflective layer 430 may have a surface 430S on which irregularities are formed. Grain boundaries or clusters may be formed on the surface 430S.

[0153] Grain boundaries and clusters can be formed by using ion milling and ion bombardment to form the reflective layer 430. From the metal layer 430m (see...) Figure 5A Separated metal particles P (see) Figure 5A ) can accumulate while continuously adhering to the inner surface of the first opening 410OP, and when the metal particles P (see Figure 5A When the growth surfaces of metal particles come into contact with each other, boundary surfaces (i.e., grain boundaries) can be formed. Additionally, large and small metal particles can separate from the metal layer at a depth of 430 μm (see...). Figure 5A ) separate, and when metal particles of various sizes P (see Figure 5A Clusters can form when they locally aggregate and accumulate on the inner surface of the first opening 410OP.

[0154] When irregularities are formed on the surface 430S of the reflective layer 430 due to grain boundaries or clusters, light traveling toward the inner surface of the first opening 410OP can be diffusely reflected by the reflective layer 430. Because the light is diffusely reflected at various angles, quantum dots in a wider region of the color conversion layer can be excited by the reflected light, and the color can be converted. This improves the light conversion efficiency.

[0155] Figure 11 It is a graph used to compare the light extraction efficiency of a display device with and without a reflective layer according to an embodiment.

[0156] exist Figure 11In the graph, the horizontal axis represents resolution, and the vertical axis represents light extraction efficiency. Resolution is measured in pixels per inch (PPI). Light extraction efficiency is measured in arbitrary units (au). Arbitrary units (au) refer to the relative value of light extraction efficiency with a reflective layer, when the light extraction efficiency is a reference value of 1.0 in the absence of a reflective layer.

[0157] Reference Figure 2 , Figures 6 to 8 as well as Figure 11 As can be seen, the light extraction efficiency is further increased when the reflective layer 430 is provided. Furthermore, the higher the resolution of the display device 1, the greater the improvement in light extraction efficiency due to the reflective layer 430. When the first light-blocking layer 410 is present, as the resolution of the display device 1 increases, the area ratio of the area occupied by the first light-blocking layer 410 to the total area of ​​the display device 1 may increase, and the area ratio of the first opening 410OP, in which the color conversion layers 451 and 452 and the light transmission layer 453 are located, to the total area may decrease. In other words, as the resolution increases, the width of the first opening 410OP of the first light-blocking layer 410 may decrease, and therefore optical loss may increase. Therefore, when the reflective layer 430 is provided, the higher the resolution of the display device 1, the greater the contribution of the reflective layer 430 to the light extraction efficiency and light conversion efficiency. Therefore, in the case of manufacturing a high-resolution display device, by providing the reflective layer 430 according to some example embodiments, it is possible to provide a display device 1 with relatively improved display quality.

[0158] Figures 12A to 12D It is a graph showing the relationship between wavelength and reflectivity of the material and thickness of the reflective layer in a display device according to some example embodiments.

[0159] Reference Figure 2 , Figures 6 to 8 as well as Figures 12A to 12D , Figure 12A The reflectivity is shown according to the wavelength of light when the reflective layer 430 comprises Ag and the thickness of the reflective layer 430 is 20 nm, 40 nm, 60 nm, 80 nm, and 100 nm, respectively. (Refer to...) Figure 12A As can be seen, the reflectivity of the reflective layer 430 generally increases with increasing wavelength. As the thickness of the reflective layer 430 becomes greater than 20 nm, it can exhibit high reflectivity. However, when the reflective layer 430 has a thickness of 100 nm, its reflectivity can be lower than when it has a thickness less than 100 nm. Therefore, when the reflective layer 430 comprises Ag, its thickness can be greater than 20 nm and less than 100 nm, and preferably about 60 nm to about 80 nm.

[0160] Figure 12B The reflectivity is shown according to the wavelength of light when the reflective layer 430 comprises Al and the thickness of the reflective layer 430 is 20 nm, 40 nm, 60 nm, 80 nm, and 100 nm, respectively. (Refer to...) Figure 12B When the thickness of the reflective layer 430 is 80 nm, the reflective layer 430 can have high reflectivity. On the other hand, when the thickness of the reflective layer 430 is 100 nm, the reflective layer 430 can have relatively low reflectivity. When the reflective layer 430 includes Al, the thickness of the reflective layer 430 can be greater than 60 nm and less than 100 nm, and is preferably about 80 nm.

[0161] Figure 12C The reflectivity is shown according to the wavelength of light when the reflective layer 430 comprises Au and the thickness of the reflective layer 430 is 20 nm, 40 nm, 60 nm, 80 nm, and 100 nm, respectively. (Refer to...) Figure 12C As the thickness of the reflective layer 430 increases, the reflective layer 430 can typically have a high reflectivity. When the reflective layer 430 includes Au, the thickness of the reflective layer 430 can be greater than 60 nm, and is preferably about 80 nm to about 100 nm.

[0162] Figure 12D The reflectivity is shown according to the wavelength of light when the reflective layer 430 comprises Ag and has a thickness of 60 nm, when the reflective layer 430 comprises Al and has a thickness of 80 nm, and when the reflective layer 430 comprises Au and has a thickness of 80 nm. (Refer to...) Figure 12D When the reflective layer 430 comprises Ag and has a thickness of 60 nm, the reflective layer 430 can have high reflectivity overall in the visible band. Therefore, according to some example embodiments, the reflective layer 430 may comprise Ag and have a thickness of approximately 60 nm.

[0163] Figure 13 This is a graph showing the relationship between the ion polishing time of a metal layer and the transmittance of visible light in a manufacturing process of a display device according to some example embodiments.

[0164] Reference Figure 2 , Figures 6 to 8 as well as Figure 13 , Figure 13The graph illustrates the relationship between the ion polishing time of the metal layer 430m and the transmittance of visible light at a wavelength of 550nm when the resolution is designed to be 80PPI and 400PPI, respectively. The horizontal axis represents the ion polishing time (i.e., the time required to perform ion polishing), and the unit of the horizontal axis is seconds (sec). The vertical axis represents the light transmittance, and the unit of the vertical axis is percentage (%). The transmittance can be obtained by measuring the ion polishing time every 100 seconds. In this case, the metal layer 430m can be formed on the first light-blocking layer 410 with a thickness of 60nm and can include Ag.

[0165] Figure 13 The initial transmittance shown in the graph refers to the light transmittance in the state before the metal layer 430m is formed on the first light-blocking layer 410 during the manufacturing process of the display device 1. When the resolution is 80 PPI, the light transmittance can be between approximately 80% and approximately 90%, and when the resolution is 400 PPI, the light transmittance can be between approximately 60% and approximately 70%. As the resolution increases, the ratio of the area occupied by the opening in the first light-blocking layer 410 in the display device 1 decreases; therefore, the light transmittance may decrease.

[0166] When the metal layer 430m is formed on the first light-blocking layer 410, the light transmittance may decrease due to the metal layer 430m compared to the initial transmittance. Subsequently, when a portion of the metal layer 430m is removed by ion milling, the light transmittance may increase again. That is, the light transmittance can increase with the ion milling process. When ion milling is performed for approximately 300 seconds (t1), the light transmittance can be substantially saturated. According to some example embodiments, ion milling can be performed for approximately 300 seconds (t1) or longer. According to some example embodiments, additional ion milling for approximately 100 seconds or longer can be performed to completely remove the metal layer 430m located in the first opening 410OP corresponding to the emission region. Therefore, according to some example embodiments, ion milling can be performed for approximately 400 seconds (t2) or longer, or approximately 500 seconds (t3) or longer.

[0167] According to one or more disclosed embodiments, the light extraction efficiency and light conversion efficiency of light passing through the color conversion layer can be improved by providing a reflective layer disposed around the color conversion layer of the optical panel. This reflective layer has irregularities on its surface, thus providing a display device with improved display quality. Furthermore, in the process of forming the reflective layer surrounding the color conversion layer, ion polishing and ion bombardment can be used to simplify the manufacturing process of the display device, thereby providing a method for manufacturing a display device that can improve manufacturing efficiency, reduce manufacturing quality defects, and lower costs. However, the scope of the disclosed embodiments is not limited to the above-described effects.

[0168] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered as other similar features or aspects that may be used in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope defined by the claims and their equivalents.

Claims

1. A display device, the display device comprising: First base; The first to third light-emitting elements, on the first substrate, each of the first to third light-emitting elements includes a first color emitting layer; An encapsulation layer covers the first light-emitting element to the third light-emitting element, the encapsulation layer comprising at least one inorganic layer and at least one organic layer; A first light-blocking layer is provided on the encapsulation layer, and the first light-blocking layer includes a plurality of first openings respectively corresponding to the first light-emitting element to the third light-emitting element; A reflective layer, on the first light-blocking layer, the reflective layer corresponding to the inner surface of each of the plurality of first openings, and including a surface on which an irregular body is formed; A first color conversion layer is located in a first opening corresponding to the first light-emitting element; The second color conversion layer is located in the first opening corresponding to the second light-emitting element; A light-transmitting layer is located in the first opening corresponding to the third light-emitting element; A second light-blocking layer is provided on the first light-blocking layer, and the second light-blocking layer includes a plurality of second openings superimposed on the plurality of first openings; as well as In the plurality of second openings, the first to third color filter layers are respectively stacked with the first color conversion layer, the second color conversion layer, and the light transmission layer. The irregular body is formed by using ion milling and attaching metal particles.

2. The display device according to claim 1, the display device further comprising a first cover layer, the first cover layer covering the first color conversion layer, the second color conversion layer and the light transmission layer.

3. The display device according to claim 2, wherein, One surface of the first light-blocking layer is in contact with the first capping layer.

4. The display device according to claim 2, further comprising a second cover layer covering the first color filter layer to the third color filter layer. in, The first capping layer and the second capping layer sandwich the first color filter layer to the third color filter layer between them.

5. The display device according to claim 1, further comprising a second substrate, the second substrate being located above one side of the first substrate, such that the first light-emitting element to the third light-emitting element are located between the first substrate and the second substrate. in, The second substrate covers the first color filter layer to the third color filter layer and the second light blocking layer.

6. The display device according to claim 1, wherein, The reflective layer has a thickness of 20 nm or greater and 100 nm or less, and an aspect ratio of 1 or greater and 20 or less.

7. The display device according to claim 6, wherein, The surface of the reflective layer has grain boundaries or clusters.

8. The display device according to claim 1, wherein, The reflective layer comprises a metallic material, which is silver, aluminum, gold, or a combination thereof.

9. A display device, the display device comprising: Base; First to third light-emitting elements, on the substrate, each of the first to third light-emitting elements includes a first color emitting layer; A first color conversion layer is provided on the substrate and corresponds to the first light-emitting element; A second color conversion layer is provided on the substrate and corresponds to the second light-emitting element; A light-transmitting layer is provided on the substrate and corresponds to the third light-emitting element. A reflective layer surrounds each of the first color conversion layer, the second color conversion layer, and the light transmission layer in a plane; A first inorganic layer covers one side of each of the first color conversion layer, the second color conversion layer, and the light transmission layer; as well as A second inorganic layer covers the other side of each of the first color conversion layer, the second color conversion layer, and the light transmission layer, and also covers the reflective layer. The first inorganic layer and the second inorganic layer are in contact with each other. Wherein, one surface of the reflective layer facing the first color conversion layer, the second color conversion layer, and the light transmission layer includes an irregular body, and The irregular body is formed by using ion milling and attaching metal particles.

10. A method for manufacturing a display device, the method comprising the following steps: Prepare a first substrate, on which a first light-emitting element to a third light-emitting element are disposed, each of the first light-emitting element to the third light-emitting element including a first color emission layer; An organic film pattern layer including a plurality of first openings is formed on the first substrate, wherein the plurality of first openings correspond to the first light-emitting element to the third light-emitting element respectively; A metal layer is deposited on the organic film pattern layer; A reflective layer is formed by etching the metal layer via ion milling and attaching the etched metal particles of the metal layer to the inner surface of the plurality of first openings; as well as A first color conversion layer, a second color conversion layer, and a light transmission layer are formed in the plurality of first openings, respectively superimposed on the first light-emitting element to the third light-emitting element.

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