Power combiners / splitters for millimeter-wave applications

Abstract

A power combiner / splitter for multiple-input, multiple-output (MIMO) applications and a method for manufacturing the same. A metallization stack has a plurality of layers, the plurality of layers including patterned metal features forming a first branch arrangement and a second branch arrangement of the power combiner / splitter. Each branch arrangement includes a port positioned at one end of the branch arrangement and a plurality of additional ports. Each branch arrangement also includes a plurality of bifurcated branches extending between each end of the branch arrangement for dividing / combining signals passing through the branch arrangement between the port and the plurality of additional ports. The metallization stack further includes a common ground plane shared by the first branch arrangement and the second branch arrangement. At least some of the patterned metal features forming the first branch arrangement overlie at least some of the patterned metal features forming the second branch arrangement.

Description

Technical Field

[0001] The present disclosure relates to a type of power combiner / splitter that may be used in millimeter wave (mm-wave) applications requiring multiple-input multiple-output (MIMO) operation. Background Art

[0002] The Wilkinson combiner / splitter is a popular device used in mmWave designs. While its implementation can be relatively simple, it can often occupy significant substrate real estate. However, with the increasing demand for mmWave integrated circuits (ICs), this type of device can be integrated on silicon and / or laminate-type structures.

[0003] For analog beamforming (phased array operation), it is highly desirable to provide dual-polarized patch antennas that allow MIMO operation. Therefore, two Wilkinson combiners must be integrated. Summary of the Invention

[0004] Aspects of the present disclosure are set out in the accompanying independent and dependent claims. Combinations of features from the dependent claims may be combined with features of the independent claims as required and not only as explicitly set out in the claims.

[0005] According to one aspect of the present disclosure, there is provided a power combiner / splitter for multiple-input multiple-output (MIMO) applications, the power combiner / splitter comprising:

[0006] a metallization stack formed on a surface, the metallization stack comprising a plurality of layers, the plurality of layers comprising patterned metal features, the patterned metal features forming:

[0007] A first branch arrangement, the first branch arrangement comprising:

[0008] a first port positioned at one end of the first branch arrangement;

[0009] Multiple additional ports located;

[0010] a plurality of bifurcated branches extending between the first port of the first branch arrangement and the plurality of further ports of the first branch arrangement for dividing / combining signals passing through the first branch arrangement between the first port and the plurality of further ports of the first branch arrangement; and

[0011] A second branch arrangement, the second branch arrangement comprising:

[0012] a first port positioned at one end of the second branch arrangement;

[0013] Multiple additional ports;

[0014] a plurality of bifurcated branches extending between the first port of the second branch arrangement and the plurality of further ports of the first branch arrangement for dividing / combining signals passing through the second branch arrangement between the first port and the plurality of further ports of the second branch arrangement;

[0015] wherein the metallization stack further comprises a common ground plane shared by the first branch arrangement and the second branch arrangement, and

[0016] The first branch arrangement and the second branch arrangement are positioned in a common area of ​​the metallization stack such that at least some of the patterned metal features forming the first branch arrangement overlie at least some of the patterned metal features forming the second branch arrangement.

[0017] According to another aspect of the present disclosure, there is provided a method of manufacturing a power combiner / splitter for multiple-input multiple-output (MIMO) applications, the method comprising:

[0018] forming a metallization stack formed on a surface, the metallization stack comprising a plurality of layers, the plurality of layers comprising patterned metal features, the patterned metal features forming:

[0019] A first branch arrangement, the first branch arrangement comprising:

[0020] a first port positioned at one end of the first branch arrangement;

[0021] Multiple additional ports located;

[0022] a plurality of bifurcated branches extending between the first port of the first branch arrangement and the plurality of further ports of the first branch arrangement for dividing / combining signals passing through the first branch arrangement between the first port and the plurality of further ports of the first branch arrangement; and

[0023] A second branch arrangement, the second branch arrangement comprising:

[0024] a first port positioned at one end of the second branch arrangement;

[0025] Multiple additional ports;

[0026] a plurality of bifurcated branches extending between the first port of the second branch arrangement and the plurality of further ports of the first branch arrangement for dividing / combining signals passing through the second branch arrangement between the first port and the plurality of further ports of the second branch arrangement;

[0027] wherein the first branch arrangement and the second branch arrangement are positioned in a common area of ​​the metallization stack such that at least some of the patterned metal features forming the first branch arrangement overlie at least some of the patterned metal features forming the second branch arrangement; and

[0028] A common ground plane is formed in one layer of the metallization stack, wherein the common ground plane is shared by the first branch arrangement and the second branch arrangement.

[0029] The feature of arranging the combiner / splitter in the metallization stack improves manufacturing, including enabling ease of device scalability (e.g., selecting the number of inputs / outputs for MIMO applications), and further allows the combiner / splitter to be integrated onto a die, such as a semiconductor die, using back-end-of-line (BEOL) processing techniques. The metallization stack embodiment enables the provision and selective placement of a common ground plane layer to optimize isolation between the first branch arrangement and the second branch arrangement.

[0030] In some embodiments, the first port of the first branch arrangement is an input and the plurality of further ports of the first branch arrangement are outputs. In some other embodiments, the first port of the first branch arrangement is an output and the plurality of further ports of the first branch arrangement are inputs.

[0031] In some embodiments, the first port of the second branch arrangement is an input and the plurality of further ports of the second branch arrangement are outputs. In some other embodiments, the first port of the second branch arrangement is an output and the plurality of further ports of the second branch arrangement are inputs.

[0032] Thus, depending on the configuration of the ports as input / output, the power combiner / splitter can function as a power combiner or a power splitter.

[0033] In some embodiments, the first port of the first branch arrangement and the first port of the second branch arrangement are positioned at the same end of the power combiner / splitter. In some other embodiments, the first port of the first branch arrangement and the first port of the second branch arrangement are positioned at opposite ends of the power combiner / splitter.

[0034] In some other embodiments, the patterned metal features forming at least some of the branches of the first branch arrangement and the patterned metal features forming at least some of the branches of the second branch arrangement are formed in a same layer of the metallization stack.

[0035] In some other embodiments, the patterned metal features forming the first branch arrangement are positioned in multiple layers of the metallization stack. In some other embodiments, the patterned metal features forming the second branch arrangement are positioned in multiple layers of the metallization stack. In some other embodiments, the metallization stack includes two layers, each of which includes patterned metal features forming at least some of the branches of the first branch arrangement and patterned metal features forming at least some of the branches of the second branch arrangement.

[0036] In some other embodiments, the first of the two layers comprises:

[0037] patterned metal features forming branches of the first branch arrangement proximate the first port of the first branch arrangement; and

[0038] forming patterned metal features of branches of the second branch arrangement proximate to the plurality of further ports of the second branch arrangement; and

[0039] The second of the two layers comprises:

[0040] patterned metal features forming branches of the first branch arrangement proximate the plurality of further ports of the first branch arrangement; and

[0041] Patterned metal features are formed forming branches of the second branch arrangement proximate the first port of the second branch arrangement.

[0042] In some other embodiments, the ground plane is located in a layer, which is located between the two layers. This may improve the isolation between the first branch arrangement and the second branch arrangement.

[0043] In some other embodiments, all of the patterned metal features forming the first branch arrangement are located in a first layer of the metallization stack, and all of the patterned metal features forming the second branch arrangement are located in a second layer of the metallization stack. The ground plane may be located in a layer of the metallization stack that is located between the first and second layers. This may improve isolation between the first and second branch arrangements.

[0044] According to further aspects of the present disclosure, an integrated circuit including a power combiner / splitter is provided, wherein the metallization stack is formed on a surface of a semiconductor die of the integrated circuit.

[0045] According to another aspect of the present disclosure, a carrier for a semiconductor device is provided, the carrier comprising a power combiner / divider, wherein the metallization stack is formed on a surface of the carrier. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Embodiments of the present disclosure will hereinafter be described, by way of example only, with reference to the accompanying drawings, in which like reference numerals refer to like elements, and in which:

[0047] Figure 1 A Wilkinson combiner / splitter is shown schematically;

[0048] Figure 2 A cascaded Wilkinson combiner / splitter is shown schematically;

[0049] Figure 3 schematically illustrates a power combiner / splitter according to an embodiment of the present disclosure;

[0050] Figure 4 Schematically illustrates a power combiner / splitter according to another embodiment of the present disclosure;

[0051] Figure 5 shows a power combiner / splitter according to further embodiments of the present disclosure;

[0052] Figure 6 Shown Figure 5 The lower layer of the power combiner / splitter;

[0053] Figure 7 Shown Figure 5 The middle layer of power combiner / splitter;

[0054] Figure 8 Shown Figure 5 The upper layer of the power combiner / splitter;

[0055] Figure 9 and 10 Shown Figure 5 Details of the power combiner / splitter; and

[0056] Figure 11 A power combiner / divider disposed on a semiconductor substrate according to an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0057] Hereinafter, embodiments of the present disclosure are described with reference to the accompanying drawings.

[0058] Figure 1 An example of a Wilkinson combiner / splitter 10 is shown schematically. The combiner / splitter 10 has a first port 2, a second port 14 and a third port 16. When operating as a splitter, the first port 2 can be used as an input port and the ports 14, 16 can be used as output ports. Conversely, when operating as a combiner, the first port 2 can be used as an output port and the ports 14, 16 can be used as input ports. The combiner / splitter 10 has two λ / 4 lines 4, 6 with a characteristic impedance sqrt(2)*Z0 coupled with a resistor with a value of 2*Z0 in between for isolation purposes. For example, when the combiner / splitter 10 is used as a splitter, a signal input at port 2 is split into two equivalent paths along lines 4, 6 with an insertion loss of approximately -3dB.

[0059] although Figure 1 The Wilkinson combiner / splitter 10 shown has two ports 14, 16 used as input / output, but the combiner / splitter 10 can be extended (in a cascade configuration) to have more ports of this type. Figure 2 Another example of a Wilkinson combiner / divider 10 is shown schematically. Figure 2 In the example of FIG, the combiner / splitter 10 has ports 2, 32, 34, 36, and 38. When operating as a splitter, the first port 2 can be used as an input port, and ports 32, 34, 36, and 38 can be used as output ports. Conversely, when operating as a combiner, the first port 2 can be used as an output port and ports 32, 34, 36, and 38 can be used as input ports. It should be noted that Figure 2 The combiner / splitter 10 shown may be viewed as comprising Figure 1 A combiner / splitter 10 of the type shown, with two further such combiners / splitters 10 coupled to Figure 1 For example, when the combiner / splitter 10 is used as a splitter, the signal input at port 2 is split into four equivalent paths along lines 22, 24, 26, and 28, with accompanying splitting losses (insertion loss will be given by metal / dielectric losses and may be added to the splitting losses). Note that a "loss-less" splitter would incur a loss of 6 dB. Figure 1 Further cascading of the Wilkinson combiner / splitters 10 shown may allow even more combiner inputs or splitter outputs to be provided.

[0060] Wilkinson combiners / splitters may occupy a relatively large area, which may be problematic in situations where, for example, more than one such combiner / splitter is disposed on a substrate, such as a semiconductor substrate, or other carrier, where space may be at a premium. According to embodiments of the present disclosure, multiple combiners / splitters may be disposed in a metallization stack (e.g., on a surface of a semiconductor substrate or carrier) in a stacked arrangement, with features of each combiner / splitter overlapping each other.

[0061] Figure 3 A power combiner / splitter 100 according to an embodiment of the present disclosure is schematically shown. In this embodiment, the first combiner / splitter has the same configuration as described above with respect to Figure 2 Ports 2, 32, 34, 36, 38 are similar to those described above. In this embodiment, the second combiner / splitter has the same Figure 2 The ports described are similar to ports 102, 132, 134, 136, 138. Embodiments of the present disclosure may facilitate multiple-input, multiple-output (MIMO) applications by providing a plurality of such ports.

[0062] The impedance between ports 32, 34, 36, and 38 is Figure 3 The impedances 33 and 37 are shown in FIG, while the impedances between ports 132, 134, 136, and 138 are shown in FIG. Figure 3 In the figure, the impedances 133 and 137 are shown. Figure 3 , the first combiner / splitter covers the second combiner / splitter, and the first combiner / splitter has an orientation opposite to the second combiner / splitter, so that port 2 of the first combiner / splitter and ports 132, 134, 136, 138 of the second combiner / splitter are arranged on the same side of the power combiner / splitter 100, and port 102 of the second combiner / splitter and ports 32, 34, 36, 38 of the first combiner / splitter are arranged on the same side of the power combiner / splitter 100.

[0063] Figure 4 FIG2 schematically shows a power combiner / divider 100 according to another embodiment of the present disclosure. Figure 3In this embodiment, the power combiner / splitter 100 includes a first combiner / splitter covering a second combiner / splitter. However, in this embodiment, the two combiners / splitters in the power combiner / splitter 100 have the same orientation, such that port 2 of the first combiner / splitter is disposed on the same side of the power combiner / splitter 100 as port 102 of the second combiner / splitter, and such that ports 132, 134, 136, 138 of the second combiner / splitter are disposed on the same side of the power combiner / splitter 100 as ports 32, 34, 36, 38 of the first combiner / splitter.

[0064] Figure 3 and 4 The combiner / splitter in the may include the above Figure 2 Additional cascading of the mentioned type further increases the number of ports.

[0065] When the combiner / splitter Figure 3 or 4, there may be problems with the isolation between the combiner / splitter paths. For example, crosstalk may occur at points such as Figure 3 and 4 Points 50, 52 are shown where the branching points of the paths within each combiner / splitter overlap.

[0066] According to embodiments of the present disclosure, the features of the power combiner / splitter can be incorporated into the metallization stack. The design flexibility provided by implementing the power combiner / splitter in the metallization stack can make the combiner / splitter easy to scale (cascade) and can also allow steps to be taken to improve the isolation between the various paths of the overlaid combiner / splitter.

[0067] Now refer to Figures 5 to 10 A power combiner / splitter 100 according to further embodiments of the present disclosure is described.

[0068] Figure 5 An overview of a power combiner / splitter 100 is shown in FIG. In this embodiment, the power combiner / splitter 100 has a first combiner / splitter having ports 2, 32, 34, 36, 38 and a second combiner / splitter having ports 102, 132, 134, 136, 138, and the internal paths of the first combiner / splitter and the second combiner / splitter may be similar in topology to those described with respect to FIG. Figure 3 and 4 The paths described. Figure 5 The overall topology of the power combiner / splitter 100 is similar to Figure 3The topology shown is similar, i.e., ports 2, 102 are positioned on opposite sides of the power combiner / splitter 100, however, a similar topology may be implemented. Figure 4 The topology shown is similar to that of the embodiment in which ports 2, 102 are located on the same side of the power combiner / splitter 100. It should be noted that ports 32, 34 and ports 132, 134 are located on the same side of the power combiner / splitter 100. Figure 5 The same is true for ports 36, 38 and ports 136, 138 on the same side of the power combiner / splitter 100 in FIG.

[0069] As described herein, multiple metal layers in a metallization stack are used to implement Figure 5 The features (paths / ports) of the power combiner / splitter 100 in the stack. Each metal layer in the stack includes patterned metal features that define the paths, ports, etc. of the first combiner / splitter and the second combiner / splitter. Dielectric layers can be provided between the layers, and vias can extend through the dielectric layers to interconnect the patterned metal features in different metal layers. Dielectric can also be present within the "metal" layer to fill in areas not occupied by patterned metal features. As will be described below with respect to Figure 11 As described, the metallization stack may be positioned on a surface, such as a surface of a semiconductor substrate or other carrier, such as a printed circuit board (PCB).

[0070] Figure 6 Shown Figure 5 In this embodiment, the first layer is the "lower" layer, but the arrangement can be reversed so that Figure 6 The layer shown is the "upper" layer.

[0071] Figure 6 The layers in the metallization stack include a branched arrangement of patterned metal features that form paths for both the first combiner / splitter and the second combiner / splitter of the power combiner / splitter 100. Specifically, there is a first stage 140 of the second combiner / splitter, and a second stage 50 of the first combiner / splitter. Each stage 140, 50 includes patterned metal features defined in a lower layer of the metallization stack.

[0072] Specifically, in this embodiment, the first stage 140 of the second combiner / splitter includes a signal line 148 and two ground lines 142 and 144 arranged on both sides of the signal line 148. It should be noted that the signal line is bifurcated, and each bifurcated path leads to a corresponding portion of the second stage 150 of the second combiner / splitter (see FIG. Figure 8). An additional ground line 146 is positioned between the two bifurcated paths of the signal line 148. The ground lines 142, 144, 146 together serve to improve the isolation of the signal line 148 to prevent cross-interference with other features in the stack, such as the patterned metal features forming the first combiner / divider.

[0073] In this embodiment, the second stage 50 of the first combiner / splitter has two parts arranged on opposite sides of the power combiner / splitter 100. Each part can be arranged as a mirror image of the other part, such as Figure 6 As shown. Each section includes a signal line 58. It should be noted that the signal line 58 in each section of the second stage 50 is bifurcated, with one path of the bifurcated signal line leading to / from port 36 (or port 32) and the other path leading to / from port 38 (or port 34). Each section of the second stage also includes ground lines 52 and 54. Ground lines 52 and 54 are positioned on both sides of the signal line 58 to improve isolation of the signal line 58. It should be noted that in this embodiment, the ground line 52 can be coupled to the ground line 144.

[0074] Region 200 includes features for coupling various patterned metal features of the lower layer of the stack with features in other layers of the stack. Figure 9 and 10 Describe these characteristics.

[0075] Figure 7 Shown Figure 5 The middle layer of the power combiner / splitter is positioned at Figure 6 The first layer shown is the same as the one described below. Figure 8 Between additional layers of description. Figure 7 You can also see the above about Figure 6 The basic characteristics of the lower layer are described.

[0076] In this embodiment, the middle layer includes patterned metal features that form a ground plane 70. Thus, the ground plane 70 is positioned between the patterned metal features in the lower and upper layers of the stack, thereby improving the isolation between the first combiner / splitter and the second combiner / splitter. The ground plane 70, in turn, forms a shared ground plane for the branching arrangement of the first combiner / splitter and the second combiner / splitter. In this embodiment, the ground plane 70 extends to substantially cover the area (or "footprint") occupied by the features in the lower and upper layers of the stack, also serving to improve the isolation between the first combiner / splitter and the second combiner / splitter.

[0077] In this embodiment, vias 80 extend through the stack to connect a ground line (e.g., ground line 146) to the ground plane 70. Other such vias may also be provided to connect the ground plane 70 to other ground lines 142, 144, 52, 54 in lower layers and to ground lines in upper layers.

[0078] Figure 8 Shown Figure 5 In this embodiment, the additional layer is the "upper" layer in the stack. However, as mentioned above, the layers in the stack can be reversed so that Figure 8 The layer shown is the "lower" layer. Figure 8 You can also see the above about Figure 6 The lower layer described above and Figure 7 The essential characteristics of the intermediate layer are described.

[0079] Figure 8 The layers in the metallization stack include patterned metal features in a branching arrangement that form paths for both the first combiner / splitter and the second combiner / splitter of the power combiner / splitter 100. Specifically, there is a second stage 150 of the second combiner / splitter, and a first stage 40 of the first combiner / splitter. Each stage 40, 150 includes patterned metal features defined in an upper layer of the metallization stack.

[0080] As will be understood from the description below, the patterned metal features of the second stage 150 of the second combiner / separator and the first stage 40 of the first combiner / separator in the upper layer can be similar in some respects to those described above with respect to Figure 6 The patterned metal features of the first stage 140 of the second combiner / splitter and the second stage 50 of the first combiner / splitter are depicted. However, it should be noted that in this embodiment, ports 132, 134 are laterally separated from ports 32, 34 so that they do not overlap each other in the stack (ports 136, 138 are similarly arranged to ports 36, 38), thereby improving isolation between the various ports.

[0081] In this embodiment, the first stage 40 of the first combiner / splitter includes a signal line 48 and two ground lines 42, 44 arranged on both sides of the signal line 48. It should be noted that the signal line is bifurcated, and each bifurcated path leads to a corresponding portion of the second stage 50 of the first combiner / splitter (see FIG. Figure 6 ). An additional ground line 46 may be positioned between the two diverging paths of the signal line 48. The ground lines 42, 44, 46 together serve to improve the isolation of the signal line 48 to prevent cross-interference with other features in the stack, such as patterned metal features forming the second combiner / divider.

[0082] In this embodiment, the second stage 150 of the second combiner / splitter has two sections disposed on opposite sides of the power combiner / splitter 100. These opposite sides may correspond to the sides of the power combiner / splitter 100 on which the two sections of the second stage 50 of the first combiner / splitter are positioned. Thus, the two sections of each second stage 50, 150 in the stack may overlap to some extent. As described above, a ground plane 70 may be positioned between these sections to improve isolation between the sections.

[0083] Each part of the second stage 150 may be arranged as a mirror image of another part, e.g. Figure 8 As shown. Each section includes a signal line 158. It should be noted that the signal line 158 in each section of the second stage 150 is bifurcated, with one path of the bifurcated signal line leading to / from port 136 (or port 132) and the other path leading to / from port 138 (or port 134). Each section of the second stage 150 also includes ground lines 152 and 154. The ground lines 152 and 154 are positioned on both sides of the signal line 158 to improve the isolation of the signal line 158. It should be noted that in this embodiment, the ground line 152 can be coupled to the ground line 42.

[0084] Figure 9 and 10 Shown is the corresponding Figure 6 The details of the power combiner / splitter are shown in area 200. Specifically, while Figure 9 The patterned metal features of the upper and lower layers can be seen, but Figure 10 The same arrangement is shown including a ground plane 70. It should also be noted that Figure 6 The layout shown has another area adjacent to area 200 that may have the same Figure 9 The layout shown is similar to the layout (e.g., a mirror image).

[0085] Figure 9 The area 200 in the figure includes the end of the signal line 148 of the first stage 140 of the second combiner / splitter and its connection through the stack to the signal line 158 of the second stage 150 of the second combiner / splitter via the through hole 82, which extends vertically through the stack between the lower layer and the upper layer.

[0086] Figure 9 The area 200 also includes the end of the signal line 48 of the first stage 40 of the first combiner / splitter and its connection through the stack to the signal line 58 of the second stage 50 of the first combiner / splitter via a pair of through holes 82, which also extend vertically through the stack between the lower layer and the upper layer.

[0087] It should be noted that Figure 9The signal lines 58, 158 are shown partially overlapping, and Figure 9 There are also many intersections between the lines of the upper and lower layers shown. Likewise, the ground plane 70 described herein can be used to improve the isolation of these parts of the combiner / splitter at those points.

[0088] like Figure 10 As can be seen in FIG, ground plane 70 may have openings 72, 74 to allow one or more vias 82 to extend between upper and lower layers of the stack to interconnect patterned metal features in those layers without shorting at ground plane 70. Opening 74 may generally conform to the footprint of one via 82 (e.g., at 72) or a group of vias 82 (e.g., at 74). This may allow openings 72, 74 to be relatively small, improving the isolation provided by ground plane 70 at the connection between the first and second stages of each combiner / splitter.

[0089] Figure 11 A power combiner / splitter 100 of the type described above is shown disposed on a surface of a semiconductor substrate 300 according to an embodiment of the present disclosure. The substrate 300 is a semiconductor die of an integrated circuit. As previously described, the metallization stack 202 implementing the power combiner / splitter 100 may be disposed on some other type of surface, such as a surface of a printed circuit board (PCB). Figure 11 , the metallization stack has four layers 204, 206, 208, 210. For example, these layers 204, 206, 208, 210 may correspond to layers Cu1, Cu2, Cu3, Cu4 in the metallization stack. As previously mentioned, dielectric layers may be disposed between the layers 204, 206, 208, 210, and vias may extend through the dielectric layers to interconnect patterned metal features in the different metal layers 204, 206, 208, 210. Likewise, dielectric may also be present within the "metal" layer to fill in areas not occupied by patterned metal features.

[0090] To provide electrical connections between the stack 202 and the substrate 300, metal (eg, Cu) pillars 212 may extend from the stack 202 toward the substrate 300. For example, these pillars 212 may be connected to various ports of a combiner / splitter positioned in the stack 202.

[0091] According to embodiments of the present disclosure, methods of manufacturing power combiners / splitters of the type described above may be provided. Standard back-end-of-line processing techniques may be used to form the metallization stack and the various features of the combiner / splitter.

[0092] The method may include forming a layer formed on a surface (e.g., Figure 11The metallization stack may include a plurality of layers including patterned metal features (e.g., as described above with respect to Figures 5 to 10 described).

[0093] The patterned metal features may form a first branch arrangement (e.g., see above with respect to Figure 6 and 8 In one embodiment, the first branch arrangement includes a first port positioned at one end of the first branch arrangement. The first branch arrangement may also include a plurality of additional ports positioned at the other end of the first branch arrangement. The first branch arrangement may further include a plurality of bifurcated branches extending between each end of the first branch arrangement for dividing / combining signals passing through the first branch arrangement between the first port of the first branch arrangement and the plurality of additional ports.

[0094] The patterned metal features may also form a second branch arrangement (e.g., see above with respect to Figure 6 and 8 The second branch arrangement may have a first port located at one end of the second branch arrangement. The second branch arrangement may also have a plurality of additional ports located at the other end of the second branch arrangement. The first branch arrangement may further include a plurality of bifurcated branches extending between each end of the second branch arrangement for dividing / combining signals passing through the second branch arrangement between the first port of the second branch arrangement and the plurality of additional ports.

[0095] The first and second branch arrangements may be positioned in a common area of ​​the metallization stack such that at least some of the patterned metal features forming the first branch arrangement overlie at least some of the patterned metal features forming the second branch arrangement.

[0096] The method may further include forming a common ground plane (e.g., as described above with respect to Figure 7 A common ground plane may be shared by the first branch arrangement and the second branch arrangement.

[0097] Figures 5 to 9 A review of FIGURE 1 shows that in some embodiments, the layout of the power combiner / splitter 100 can have at least one plane of symmetry. This can improve the operation of the power combiner / splitter 100 by reducing phase imbalance and phase insertion between different paths in the power combiner / splitter 100. For example, in FIGURE 1 Figures 5 to 9 In the embodiment of the present invention, the power combiner / splitter 100 has two symmetry planes 400 and 500, which are orthogonal to each other. Figure 5 shown.

[0098] Thus, a power combiner / splitter for multiple-input multiple-output (MIMO) applications and a method for manufacturing the same have been described. A metallization stack has a plurality of layers comprising patterned metal features forming a first branch arrangement and a second branch arrangement of the power combiner / splitter. Each branch arrangement comprises a port positioned at one end of the branch arrangement, and a plurality of additional ports. Each branch arrangement further comprises a plurality of bifurcated branches extending between each end of the branch arrangement for dividing / combining signals passing through the branch arrangement between the port and the plurality of additional ports. The metallization stack further comprises a common ground plane shared by the first branch arrangement and the second branch arrangement. At least some of the patterned metal features forming the first branch arrangement overlie at least some of the patterned metal features forming the second branch arrangement.

[0099] Although specific embodiments of the present disclosure have been described, it will be appreciated that numerous modifications / additions and / or substitutions may be made within the scope of the appended claims.

Claims

1. A power combiner / splitter for multiple-input multiple-output (MIMO) applications, characterized in that The power combiner / splitter comprises: a metallization stack formed on a surface, the metallization stack comprising a plurality of layers, the plurality of layers comprising patterned metal features, the patterned metal features forming: a first branch arrangement, said first branch arrangement forming a first combiner / splitter, said The first branch arrangement includes: a first port positioned at one end of the first branch arrangement; Multiple additional ports; a plurality of bifurcated branches extending between the first port of the first branch arrangement and the plurality of further ports of the first branch arrangement for dividing / combining signals passing through the first branch arrangement between the first port and the plurality of further ports of the first branch arrangement; and A second branch arrangement, forming a second combiner / splitter, the second branch arrangement comprising: a first port positioned at one end of the second branch arrangement; Multiple additional ports; a plurality of bifurcated branches extending between the first port of the second branch arrangement and the plurality of further ports of the first branch arrangement for dividing / combining signals passing through the second branch arrangement between the first port and the plurality of further ports of the second branch arrangement; wherein the metallization stack further comprises a common ground plane shared by the first branch arrangement and the second branch arrangement, and wherein the first branch arrangement and the second branch arrangement are positioned in a common area of ​​the metallization stack such that at least some of the patterned metal features forming the first branch arrangement overlie at least some of the patterned metal features forming the second branch arrangement; wherein the patterned metal features forming at least some of the branches of the first branch arrangement and the patterned metal features forming at least some of the branches of the second branch arrangement are formed in a same layer of the metallization stack.

2. The power combiner / splitter according to claim 1, wherein: the first port of the first branch arrangement being an input and the plurality of further ports of the first branch arrangement being outputs; or The first port of the first branch arrangement is an output and the plurality of further ports of the first branch arrangement are inputs.

3. The power combiner / splitter according to claim 1 or claim 2, characterized in that: the first port of the second branch arrangement being an input and the plurality of further ports of the second branch arrangement being outputs; or The first port of the second branch arrangement is an output and the plurality of further ports of the second branch arrangement are inputs.

4. The power combiner / splitter according to claim 1 or 2, characterized in that: The first port of the first branch arrangement and the first port of the second branch arrangement are positioned at a same end of the power combiner / splitter.

5. The power combiner / splitter according to claim 1 or 2, characterized in that: The first port of the first branch arrangement and the first port of the second branch arrangement are positioned at opposite ends of the power combiner / splitter.

6. The power combiner / splitter according to claim 1, wherein: The patterned metal features forming the first branch arrangement are positioned in multiple layers of the metallization stack.

7. An integrated circuit comprising a power combiner / splitter according to any one of the preceding claims, characterized in that The metallization stack is formed on a surface of a semiconductor die of the integrated circuit.

8. A carrier for a semiconductor device, the carrier comprising the power combiner / divider according to any one of claims 1 to 6, characterized in that: The metallization stack is formed on the surface of the carrier.

9. A method of manufacturing a power combiner / splitter for multiple-input multiple-output (MIMO) applications, characterized in that The method comprises: forming a metallization stack formed on a surface, the metallization stack comprising a plurality of layers, the plurality of layers comprising patterned metal features, the patterned metal features forming: A first branch arrangement, forming a first combiner / splitter, the first branch arrangement comprising: a first port positioned at one end of the first branch arrangement; Multiple additional ports; a plurality of bifurcated branches extending between the first port of the first branch arrangement and the plurality of further ports of the first branch arrangement for dividing / combining signals passing through the first branch arrangement between the first port and the plurality of further ports of the first branch arrangement; and A second branch arrangement, forming a second combiner / splitter, the second branch arrangement comprising: a first port positioned at one end of the second branch arrangement; Multiple additional ports; a plurality of bifurcated branches extending between the first port of the second branch arrangement and the plurality of further ports of the first branch arrangement for dividing / combining signals passing through the second branch arrangement between the first port and the plurality of further ports of the second branch arrangement; wherein the first branch arrangement and the second branch arrangement are positioned in a common area of ​​the metallization stack such that at least some of the patterned metal features forming the first branch arrangement overlie at least some of the patterned metal features forming the second branch arrangement; wherein the patterned metal features forming at least some of the branches of the first branch arrangement and the patterned metal features forming at least some of the branches of the second branch arrangement are formed in a same layer of the metallization stack; and A common ground plane is formed in one layer of the metallization stack, wherein the common ground plane is shared by the first branch arrangement and the second branch arrangement.

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