Through-electrode substrate, electronic unit, method for manufacturing through-electrode substrate, and method for manufacturing electronic unit

Abstract

A through electrode substrate in an embodiment of the present disclosure includes a substrate having a first surface and a second surface, and a through hole penetrating the first surface and the second surface, and a through electrode disposed inside the through hole. The through electrode includes a first portion clogging the through hole on the first surface side, and a second portion disposed along an inner side surface of the through hole. A portion thinnest in a direction perpendicular to the first surface in the first portion has a thickness A, a thinnest portion in the second portion has a thickness B, and a diameter in the first surface of the through hole has a length C. A relationship of A < C < A + B x 2 is satisfied.

Description

Technical Field

[0001] This disclosure relates to a through-electrode substrate. Background Technology

[0002] In recent years, three-dimensional mounting techniques have been used, employing stacked semiconductor circuit substrates for forming integrated circuits. In such mounting techniques, substrates with through-electrodes are used. These substrates are also called interposers. The through-electrodes are formed by placing conductors in through-holes formed in the substrate. With the increasing integration of mounted circuits, high integration is also required in the through-electrode substrates. For example, techniques have been developed to efficiently connect wiring portions and through-electrodes by arranging wiring portions that overlap with the portions where through-holes are provided.

[0003] A through-hole electrode comprises a conformal electrode (conformal through-hole) formed by a conductor that does not fill the interior of the through-hole, and a filled electrode (filled through-hole) that fills the interior of the through-hole. In the conformal case, since there is no electrode filling the interior of the through-hole electrode, manufacturing costs can be reduced, or stress caused by the through-hole electrode can be reduced. On the other hand, since wiring portions cannot be arranged to overlap with the portion where the through-hole is provided, design difficulties arise in high integration. Patent Document 1 discloses a technique in which the conductor is arranged to block the substrate surface side of the through-hole, even in a conformal through-hole electrode. Thus, a technique is disclosed that facilitates high integration by efficiently arranging wiring portions on at least one side of the substrate.

[0004] Prior art literature

[0005] Patent documents

[0006] Patent Document 1: International Publication No. 2017 / 209296

[0007] Patent Document 2: Japanese Patent Application Publication No. 2008-227433

[0008] Patent Document 3: International Publication No. 2011 / 127041 Summary of the Invention

[0009] According to Patent Document 1, high integration of the through electrode substrate has been achieved, but in the part that connects the wiring part and the through electrode, sometimes higher strength is required for the through electrode.

[0010] One embodiment of this disclosure aims to improve the strength of the through electrode in the through electrode substrate.

[0011] According to one embodiment of the present disclosure, a through electrode substrate is provided, comprising: a substrate having a first surface and a second surface, including a through hole passing through the first surface and the second surface; and a through electrode disposed inside the through hole, the through electrode comprising: a first portion blocking the through hole on the first surface side; and a second portion disposed along the inner surface of the through hole, wherein the thinnest portion of the first portion in a direction perpendicular to the first surface has a thickness A, the thinnest portion of the second portion has a thickness B, and the diameter of the through hole in the first surface has a length C, satisfying the relationship A < C < A + B × 2.

[0012] Alternatively, the first part may include a portion whose thickness increases as it moves further away from the central axis of the through hole.

[0013] According to one embodiment of the present disclosure, a through-electrode substrate is provided, comprising:

[0014] A substrate having a first surface and a second surface, including a through hole penetrating between the first surface and the second surface; and

[0015] A through electrode is disposed inside the through hole.

[0016] The through electrode comprises: a first portion blocking the through hole on the first surface side; and a second portion disposed along the inner surface of the through hole.

[0017] The first portion includes a portion whose thickness increases as it moves further away from the central axis of the through hole along a direction perpendicular to the first surface.

[0018] Alternatively, when viewed in cross-section containing the central axis of the through hole, the surface of the first portion located on the inner side of the through hole has the greatest curvature at the thinnest part of the first portion.

[0019] Alternatively, the thinnest part in the first section may be located at a position corresponding to the central axis of the through hole.

[0020] Alternatively, the through hole may have a minimum portion where the diameter of the through hole becomes a minimum value, the minimum portion being located between the first surface and the second surface, in which the through electrode does not block the through hole.

[0021] Alternatively, it may also include: a wiring layer disposed on the first surface side of the substrate, in contact with the through electrode, wherein, when viewed along a direction perpendicular to the first surface, the contact area of ​​the wiring layer in contact with the through electrode overlaps with the through hole.

[0022] Alternatively, when viewed along a direction perpendicular to the first surface, the contact area is surrounded by the outer edge of the through hole in the first surface.

[0023] Alternatively, when viewed along a direction perpendicular to the first surface, the contact area overlaps with the outer edge of the through hole in the first surface.

[0024] Alternatively, the contact area may comprise multiple areas.

[0025] Alternatively, the surface of the first portion on the first side may be located inside the through hole.

[0026] Alternatively, it may also include a filler located inside the through hole, outside the metal layer of the through electrode.

[0027] Alternatively, the filler may contain a conductive material.

[0028] Alternatively, it may also include: a second wiring layer disposed on the second surface side of the substrate, in contact with the filler, wherein, when viewed along a direction perpendicular to the second surface, the contact area of ​​the second wiring layer in contact with the filler is surrounded by the outer edge of the second surface of the through hole.

[0029] Alternatively, the filler may contain an insulating material.

[0030] Alternatively, when viewed in cross-section containing the central axis of the through hole, the surface of the first portion located on the inner side of the through hole has a radius of curvature ra at the thinnest part of the first portion, and the radius of the first surface of the through hole has a length rb, satisfying the relationship ra / rb≥0.2.

[0031] According to one embodiment of the present disclosure, an electronic unit is provided, comprising: a through electrode substrate as described above; and an electronic device electrically connected to the through electrode of the through electrode substrate.

[0032] Alternatively, the electronic device may include an electrode electrically connected to the through electrode, the electrode of the electronic device overlapping the through electrode when viewed along a direction perpendicular to the first surface of the through electrode substrate.

[0033] According to one embodiment of the present disclosure, a method for manufacturing a through-electrode substrate is provided, comprising: forming a seed layer along the inner surface of the through-hole on a substrate having a first surface and a second surface and including a through-hole penetrating between the first surface and the second surface; forming an electroplated layer on the seed layer to a thickness such that the through-hole is not blocked by a first electroplating condition; and further forming the electroplated layer to block the first surface side of the through-hole by a second electroplating condition in which the formation rate on the first surface side is faster than that on the second surface side.

[0034] Alternatively, fluid can flow into the interior of the through hole from the second side, and by solidifying the fluid, a filler can be formed inside the through hole to fill the portion outside the electroplated layer.

[0035] According to one embodiment of this disclosure, a method for manufacturing the electronic unit described above is provided. Alternatively, the method for manufacturing the electronic unit may include the following steps: heating the electronic device while applying pressure toward the through electrode substrate, thereby electrically connecting the through electrode and the electrode.

[0036] According to one embodiment of the present disclosure, the strength of the through electrode in the through electrode substrate can be improved. Attached Figure Description

[0037] Figure 1 This is a diagram illustrating the cross-sectional structure of the electronic unit in the first embodiment of this disclosure.

[0038] Figure 2 This is a cross-sectional view illustrating the structure of the through electrode substrate in the first embodiment of this disclosure.

[0039] Figure 3 This is a diagram illustrating the structure (closure) of the first surface side of the through electrode in the first embodiment of this disclosure.

[0040] Figure 4 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the first embodiment of this disclosure.

[0041] Figure 5 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the first embodiment of this disclosure.

[0042] Figure 6 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the first embodiment of this disclosure.

[0043] Figure 7 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the first embodiment of this disclosure.

[0044] Figure 8 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the first embodiment of this disclosure.

[0045] Figure 9 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the first embodiment of this disclosure.

[0046] Figure 10 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the first embodiment of this disclosure.

[0047] Figure 11 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the first embodiment of this disclosure.

[0048] Figure 12 It is an electron microscope image of a cross-section through the electrode.

[0049] Figure 13 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the second embodiment of this disclosure.

[0050] Figure 14 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the second embodiment of this disclosure.

[0051] Figure 15 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the second embodiment of this disclosure.

[0052] Figure 16 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the third embodiment of this disclosure.

[0053] Figure 17 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the third embodiment of this disclosure.

[0054] Figure 18 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the third embodiment of this disclosure.

[0055] Figure 19 This is a diagram illustrating the cross-sectional structure of the through electrode in the fourth embodiment of this disclosure.

[0056] Figure 20 This is a diagram illustrating the structure (closure) of the first surface side of the through electrode in the fourth embodiment of this disclosure.

[0057] Figure 21 This is a diagram illustrating the cross-sectional structure of the through electrode in the fifth embodiment of this disclosure.

[0058] Figure 22 This is a diagram illustrating the cross-sectional structure of the through electrode in the sixth embodiment of this disclosure.

[0059] Figure 23 This is a diagram illustrating the cross-sectional structure of the wiring substrate in the sixth embodiment of this disclosure.

[0060] Figure 24 This is a diagram illustrating the cross-sectional structure of the through electrode in the seventh embodiment of this disclosure.

[0061] Figure 25 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the eighth embodiment of this disclosure.

[0062] Figure 26 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the eighth embodiment of this disclosure.

[0063] Figure 27 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the eighth embodiment of this disclosure.

[0064] Figure 28 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the eighth embodiment of this disclosure.

[0065] Figure 29 This is a diagram illustrating an electronic device that includes the electronic unit in the first embodiment of this disclosure.

[0066] Figure 30A This is a diagram illustrating an example of the first electroplating process.

[0067] Figure 30B This is a diagram illustrating an example of the second electroplating process.

[0068] Figure 30C This is a diagram illustrating an example of the second electroplating process.

[0069] Figure 30D This is a diagram illustrating an example of the second electroplating process.

[0070] Figure 31 This is a diagram illustrating an example of the cross-sectional structure of the second metal layer.

[0071] Figure 32 This is a diagram illustrating an example of the cross-sectional structure of the closed portion of the through electrode.

[0072] Figure 33 This is a diagram illustrating an example of a method for manufacturing an electronic unit.

[0073] Figure 34 This is a diagram illustrating an example of a method for manufacturing an electronic unit.

[0074] Figure 35 This is a diagram illustrating an example of a method for manufacturing an electronic unit.

[0075] Figure 36 This is a diagram illustrating an example of the structure used to connect the enclosure of the through-electrode substrate and the electrode of the electronic device.

[0076] Figure 37 This is a diagram illustrating an example of the structure used to connect the enclosure of the through-electrode substrate and the electrode of the electronic device.

[0077] Figure 38 A diagram illustrating an example of the construction used to connect the enclosure of the through-electrode substrate and the electrode of the electronic device.

[0078] Figure 39 A diagram illustrating an example of the construction used to connect the enclosure of the through-electrode substrate and the electrode of the electronic device.

[0079] Figure 40A This is a diagram illustrating an example of the cross-sectional structure of a wiring layer connected to a closed portion of a through-electrode substrate.

[0080] Figure 40B It is shown Figure 40A A top view of the wiring layer.

[0081] Figure 41A This is a diagram illustrating an example of the cross-sectional structure of a wiring layer connected to a closed portion of a through-electrode substrate.

[0082] Figure 41B It is shown Figure 41A A top view of the wiring layer.

[0083] Figure 42A This is a diagram illustrating an example of the cross-sectional structure of a wiring layer connected to a closed portion of a through-electrode substrate.

[0084] Figure 42B It is shown Figure 42A A top view of the wiring layer.

[0085] Figure 43A This is a diagram illustrating an example of the cross-sectional structure of a wiring layer connected to a closed portion of a through-electrode substrate.

[0086] Figure 43B It is shown Figure 43A A top view of the wiring layer.

[0087] Figure 44A This is a top view showing an example of a sample with a through-electrode substrate.

[0088] Figure 44B It is Figure 44A A cross-sectional view of the through electrode substrate cut along line E1-E1.

[0089] Figure 45A This is a top view showing another example of a sample with a through-electrode substrate.

[0090] Figure 45B It is Figure 45A A cross-sectional view of the through electrode substrate cut along line E2-E2. Detailed Implementation

[0091] Hereinafter, an electronic unit comprising an embodiment of the through-electrode substrate according to the present disclosure will be described in detail with reference to the accompanying drawings. Furthermore, the embodiments shown below are examples of embodiments of the present invention, and the present invention is not limited to these embodiments. Additionally, in the drawings referred to in this embodiment, there are instances where the same or similar symbols (symbols such as A, B, etc. are used to indicate the same part or part having the same function) are used, and repeated descriptions are omitted. Furthermore, for ease of explanation, there are instances where the scale of the drawings differs from the actual scale, or where parts of the structure are omitted from the drawings. Moreover, terms such as "circle," "vertical," etc., used to define shape, geometric conditions, and their degree, as well as values ​​of length, angle, etc., are not strictly defined and are interpreted to include a range of degrees to which the same function can be expected.

[0092] <First Implementation>

[0093] [1. Structure of semiconductor substrate]

[0094] Figure 1 This is a cross-sectional view illustrating the electronic unit 1000 according to the first embodiment of this disclosure. The electronic unit 1000 includes a wiring substrate 80, a printed wiring board 91, and electronic devices 92 and 93. The wiring substrate 80 includes a through electrode substrate 10 and a wiring structure portion 50. The electronic devices 92 and 93 and the printed wiring board 91 are connected via the wiring substrate 80. The wiring substrate 80 is an example of an interposer. The wiring substrate 80 includes a through electrode substrate 10 and a wiring laminate 70. A through electrode 100 of the through electrode substrate is disposed on the through electrode substrate 10. The detailed structure will be described later. The wiring laminate 70 is formed with stacked copper wiring. The electrode 811 disposed on the first surface 810 of the wiring substrate 80 and the through electrode 100 exposed on the second surface 820 side of the wiring substrate 80 are interconnected by wiring disposed on the wiring laminate 70.

[0095] In this example, the printed wiring board 91 is a substrate containing a resin such as glass epoxy. The printed wiring board 91 is a substrate with copper wiring formed using a copper-clad laminate. In this example, the electrode 911 disposed on the first surface 910 of the printed wiring board 91 and the electrode 921 disposed on the second surface 920 of the printed wiring board 91 are interconnected by internal copper wiring. The electrode 911 and the through electrode 100 are connected by bumps 891, thereby electrically connecting the printed wiring board 91 and the wiring substrate 80.

[0096] Electronic devices 92 and 93 include components formed from semiconductors such as silicon. For example, electronic devices 92 and 93 are CPUs, memory, FPGAs, sensors, etc. Furthermore, electronic devices can also be configured as a stack of multiple semiconductor substrates. For example, if it is a memory, it can also have a structure that combines a memory controller and a memory such as HBM (High Bandwidth Memory) in a stack.

[0097] In this example, the electrode 922 of electronic device 92 and the electrode 811 of wiring substrate 80 are connected via bump 892, thereby electrically connecting electronic device 92 and wiring substrate 80. The electrode 923 of electronic device 93 and the electrode 811 of wiring substrate 80 are connected via bump 893, thereby electrically connecting electronic device 93 and wiring substrate 80. Furthermore, electronic device 92 and electronic device 93 are electrically connected via wiring substrate 80.

[0098] [2. Structure that penetrates the electrode substrate]

[0099] Next, the through electrode substrate 10 and the through electrode 100 disposed on the through electrode substrate 10 will be described.

[0100] Figure 2 This is a cross-sectional view illustrating the structure of the through electrode substrate in the first embodiment of this disclosure. Figure 2 It is Figure 1 The image shows an enlarged view of region A1. The through-electrode substrate 10 includes a glass substrate 11 and a through-electrode 100. The glass substrate 11 has a first surface 110 and a second surface 120. A wiring stack 70 connected to the through-electrode 100 is disposed on the first surface 110 side of the glass substrate 11. The wiring stack 70 includes an interlayer insulating layer 710 and a wiring layer 720. The interlayer insulating layer 710 may contain organic materials such as polyimide and acrylic acid, or inorganic materials such as silicon oxide. The wiring layer 720 is formed by a semi-addition process, a dual damascene process, or the like.

[0101] A through-hole 15 is disposed on the glass substrate 11, penetrating the first surface 110 and the second surface 120. The diameter of the through-hole 15 is minimized to a minimum value dcm at a minimum point 15m. In this example, the minimum point 15m is located between the first surface 110 and the second surface 120. In this example, the outline of the through-hole 15 is circular when viewed along a direction perpendicular to the first surface 110. The diameter of the through-hole 15 corresponds to the diameter of this circle. Alternatively, the outline of the through-hole 15 may be a shape other than a circle. In this case, the diameter of the through-hole 15 is the size of the through-hole 15 in the direction in which the plurality of through-holes 15 are arranged.

[0102] A through electrode 100 is disposed inside the through hole 15 to conduct electricity through the through hole 15 to one side of the first surface 110 and one side of the second surface 120. The through electrode 100 includes a pad portion 102, a through portion 103, and a sealing portion 105. The sealing portion 105 is a conductor that blocks the through hole 15 on the first surface 110 side. The sealing portion 105 is also referred to as the first part. The surface of the sealing portion 105 located inside the through hole 15 ( Figure 3 Bs) is located further to the first surface 110 than the minimum part 15m. That is, the minimum part 15m is not blocked by the closing part 105.

[0103] The through portion 103 is a conductor disposed along the inner surface of the through hole 15. The through portion 103 extends continuously from the closed portion 105 to the second surface 120 side of the through hole 15. The through portion 103 is also referred to as the second part. The through portion 103 is configured not to block the area (including the miniature portion 15m) inside the through hole 15 other than the closed portion 105. Therefore, inside the through hole 15, the space 18 surrounded by the through electrode 100 is connected to the space on the second surface 120 side of the glass substrate 11 via the opening 180. In addition, as described in other embodiments described later, the space 18 may also be filled with other conductors or insulators.

[0104] The pad portion 102 extends continuously from the through portion 103 to the second surface 120 of the glass substrate 11. A bump 891 is disposed on the pad portion 102.

[0105] [3. Construction of the closed part]

[0106] Next, use Figure 3 The detailed construction of the closure 105 is explained below.

[0107] Figure 3 This is a diagram illustrating the structure (closure) of the first surface side of the through electrode in the first embodiment of this disclosure. Figure 3 It is Figure 2 The diagram shows a magnified view of the area near the closed portion 105. First, using... Figure 3Define the parts. Ts is the surface of the closed portion 105 on the first surface 110 side. In this example, surface Ts is located on the same surface as the first surface 110 of the glass substrate 11. Figure 2 The wiring layer 720 in the middle is in contact with the surface Ts. In this example, when viewed along a direction perpendicular to the first surface 110, as... Figure 2 As shown, the contact area is surrounded by the outer edge of the first surface 110 of the through hole 15. Although not shown, the contact area may also overlap with the through hole 15 and not be surrounded by the outer edge of the through hole 15. The contact area is defined by the opening to the closing portion 105 formed in the interlayer insulating layer 710. In addition, the surface Ts may be located further inside the through hole 15 than the first surface 110 of the glass substrate 11, or it may be located further outside the through hole 15.

[0108] Bs is the surface of the closed portion 105 on the second surface 120 side (the inner side of the through hole 15). Vs virtually shows the surface before the closed portion 105 is formed. Figure 7 The position of the conductor (in the manufacturing stage). The central axis ac corresponds to the center of the circle when the through hole 15 is viewed perpendicularly to the first surface 110. dc corresponds to the diameter of the through hole 15 in the first surface 110. dc1 and dc2 represent the distances from the central axis ac to positions P1 and P2, and are defined as dc1 < dc2.

[0109] da is the thickness of the thinnest portion of the closed portion 105 along the direction perpendicular to the first surface 110 (hereinafter simply referred to as "the thickness of the closed portion 105"). In this example, the thinnest portion of the closed portion 105 is located at a position corresponding to the central axis ac. Therefore, da is also called the thickness of the closed portion 105 at the central axis ac. da1 is the thickness of the closed portion 105 at a position corresponding to a distance from the central axis ac to dc1 in the in-plane direction of the first surface 110. da2 is the thickness of the closed portion 105 at a position corresponding to a distance from the central axis ac to dc2 in the in-plane direction of the first surface 110. db corresponds to the thickness of the thinnest portion of the through-hole 15 that passes through the electrode 100. That is, db corresponds to the thickness of the thinnest portion in the through portion 103.

[0110] The position of the thinnest part of the through portion 103 in the direction perpendicular to the first surface 110 is not limited. For example, the thinnest part of the through portion 103 may be located at the minimum portion 15m, or at a position closer to the first surface 110 than the minimum portion 15m, or at a position closer to the second surface 120 than the minimum portion 15m.

[0111] The structure of the closed part 105 is determined to have the following correlations R1 to R3.

[0112] R1: da < dc < da + db × 2

[0113] R2: The closed portion 105 includes the part whose thickness gradually increases as it moves away from the central axis ac.

[0114] (In this example, da < da1 < da2, and the change in thickness is continuous.)

[0115] R3: When viewed in a cross-section including the central axis ac, the thinnest portion of the closed section 105 in surface Bs has a larger curvature than other portions.

[0116] exist Figure 3 In the example, da < da1 < da2, thus continuously producing the thickness variation specified by correlation R2. In other words, correlation R3 "in the case of viewing in a cross section including the central axis ac, surface Bs has the greatest curvature at the thinnest part of the closure 105."

[0117] Here, by making the through electrode 100 a conformal electrode, that is, by forming the through electrode 100 so that a space 18 is disposed inside the through hole 15, manufacturing costs or stress can be reduced. Furthermore, since the through electrode 100 has a closing portion 105, the surface Ts of the through electrode 100 and the wiring layer 720 can be electrically connected at the position overlapping with the through hole 15.

[0118] The structure of the closure 105 is in Figure 3 In the example shown, all conditions of correlations R1 to R3 are satisfied, but the construction can satisfy only one condition or a combination of two conditions (not satisfying any one of the three conditions). Furthermore, in correlation R2, the thickness variation in the order of the central axis ac, position P1, and position P2 is not limited to continuity throughout the entire region, but only requires continuity in a portion. By satisfying at least one condition of correlations R1 to R3, the closure 105 can have a strong holding force against forces from the surface Ts side toward the interior of the through-hole 15. In this example, the through-hole 15 has a structure including a miniature portion 15m, therefore the closure 105 has a stronger holding force against forces from the surface Ts side toward the interior of the through-hole 15. Therefore, high stability is obtained in the connection between the surface Ts and the wiring layer 720. In particular, the surface Bs of the closure 105, having a generally arched structure, can have a stronger holding force.

[0119] The correlations R1 to R3 are explained in detail.

[0120] Explain the meaning of "da < dc" in the correlation R1.

[0121] In the process of connecting the wiring laminate 70, printed wiring board 91, electronic device 92, etc., to the through electrode 100 of the through electrode substrate 10, the through electrode substrate 10 is heated. When the through electrode substrate 10 is heated, the through electrode 100 undergoes thermal expansion. If the coefficient of thermal expansion of the through electrode 100 differs from that of the substrate 11, internal stress caused by thermal expansion is generated in the through electrode 100. The greater the internal stress, the more likely defects such as cracks and peeling will occur. Cracks, for example, occur in the substrate 11. Peeling, for example, occurs between the enclosure 105 and the substrate 11.

[0122] By satisfying "da < dc", the internal stress generated in the closed portion 105 of the through electrode 100 can be easily mitigated at the surface Ts. This suppresses defects such as cracks and peeling. Therefore, the closed portion 105 can withstand forces from the surface Ts side toward the interior of the through hole 15.

[0123] Explain the relationship "dc < da + db × 2" in the correlation R1.

[0124] When the coefficient of thermal expansion of the through portion 103 of the through electrode 100 is different from that of the substrate 11, internal stress caused by thermal expansion is generated in the through portion 103. The smaller the thickness of the through portion 103, the easier it is for the through portion 103 to peel off from the inner side of the through hole 15 due to internal stress.

[0125] By setting the thickness of the thinnest part of the through portion 103 to satisfy "dc < da + db × 2", it is possible to suppress the through portion 103 from peeling off from the inner side of the through hole 15.

[0126] The values ​​of dc, da, and db in the correlation R1 are the average of the measured values ​​of dc, da, and db in multiple through holes 15 and through electrodes 100. For example, the average of the measured values ​​of dc, da, and db in more than 50 through holes 15 and through electrodes 100 is used.

[0127] The methods for determining dc, da, and db are explained. First, as... Figure 44A As shown, a sample preparation process is performed to prepare a through-electrode substrate 10 having a width W. The width W of the sample is, for example, 500 μm or more and 1 mm or less. The sample includes a plurality of, for example, five or more, through holes 15 arranged in the width direction.

[0128] Next, implement along Figure 44AThe cutting lines E1-E1 shown represent a cutting process where the sample is cut by ion polishing. In this cutting process, the sample is cut such that the cutting lines E1-E1 pass through all the through holes 15 arranged in the width direction. Preferably, the cutting lines E1-E1 pass through the center of the through holes 15 located in the center of the width direction. Figure 44B It is Figure 44A A cross-sectional view of the through electrode substrate cut along line E1-E1.

[0129] Next, the selection process for the through hole 15 with the largest diameter dc is carried out. Figure 44B In the example shown, the through-hole 15 located at the center in the width direction has the largest diameter dc. Next, a measurement process is performed to measure da and db of the through electrode 100 provided in the through-hole 15 with the largest diameter dc. In this way, the measured values ​​of dc, da, and db in one through-hole 15 and through electrode 100 can be obtained. By performing 50 preparation, cutting, selection, and measurement processes, the measured values ​​of dc, da, and db in more than 50 through-holes 15 and through electrodes 100 can be obtained. As the measuring instrument for measuring the dimensions of dc, da, db, etc., a scanning electron microscope (SEM) manufactured by JEOL Corporation can be used.

[0130] Figure 45A This is a top view showing another example of a sample with a through-electrode substrate. For example... Figure 45A As shown, during the cutting process, the cutting line E2-E2 sometimes does not pass through the center of the through hole 15 located in the width direction. In this case, as... Figure 45B As shown, the diameters dc of the multiple through holes 15 appearing in the sectional view are different from each other. Figure 45B It is Figure 45A A cross-sectional view of the through electrode substrate cut along line E2-E2.

[0131] Even in Figure 45B In the example shown, it is also related to Figure 44B Similarly, in the example shown, the selection process is performed to choose the through-hole 15 with the largest diameter dc. Figure 45B In the example shown, the second through hole 15 from the right in the figure has the largest diameter dc. Next, a measurement process is performed to measure da and db of the through electrode 100 provided in the through hole 15 with the largest diameter dc.

[0132] According to the above measurement method, even if the cutting line of the sample deviates from the ideal during the cutting process, the through hole 15 of the measurement object can be appropriately selected. Therefore, deviations in the measured values ​​of dc, da, and db can be suppressed.

[0133] Explain the correlation R².

[0134] In the closed portion 105 that satisfies the correlation R2, the surface Bs on the inner side of the through hole 15 includes a portion that faces the second surface 120 the further away from the central axis ac. Therefore, the surface Bs of the closed portion 105 can have an arched structure. In this case, if the closed portion 105 is subjected to a force from the surface Ts side toward the interior of the through hole 15, a compressive force is generated on the surface Bs. Therefore, the closed portion 105 can withstand the force from the surface Ts side toward the interior of the through hole 15.

[0135] Explain the correlation R3.

[0136] When the surface Bs of the closed portion 105 has an arched structure, the greater the curvature of the surface Bs, the more effectively the force generated inside the closed portion 105 can be dispersed. The force generated inside the closed portion 105 tends to increase the closer it is to the central axis ac.

[0137] In the closed portion 105 that satisfies the correlation R3, surface Bs has the greatest curvature at the thinnest part of the closed portion 105. The thinnest part of the closed portion 105 overlaps with or is close to the central axis ac. By satisfying the correlation R3, the force generated in the thinnest part of the closed portion 105 is easily dispersed to the surrounding area. As a result, defects such as cracks in the thinnest part of the closed portion 105 can be suppressed.

[0138] like Figure 3 As shown, the thickness db of the thinnest part of the through portion 103 is smaller than the thickness da of the thinnest part of the closed portion 105. For example, db / da is 1 / 4 or less, or 1 / 5 or less. For example, db / da is 1 / 10 or more, or 1 / 9 or more.

[0139] [4. Manufacturing method of through-electrode substrate]

[0140] Next, use Figures 4 to 11 The manufacturing method of the through electrode substrate 10 described above will be explained.

[0141] Figures 4 to 11 This is a diagram illustrating a method for manufacturing a through-electrode substrate according to the first embodiment of this disclosure. First, as... Figure 4As shown, a glass substrate 11 is prepared, and a through-hole 15 is formed in the glass substrate 11. The thickness of the substrate, such as the glass substrate 11, is, for example, 100 μm or more, or 200 μm or more. The thickness of the substrate is, for example, 1 mm or less, or 500 μm or less. In this example, the thickness of the glass substrate 11 is 400 μm. Instead of the glass substrate 11, substrates containing other inorganic materials, such as quartz substrates, silicon wafers, and ceramics, can be used, or substrates containing organic materials, such as resin substrates, can be used. When using a conductive substrate such as a silicon wafer, the substrate surface containing the inner side of the through-hole 15 is covered by an insulator when the through-hole 15 is formed.

[0142] The through-hole 15 is formed such that, after irradiating the glass substrate 11 with a laser under given conditions, an etching process is performed using a given etchant, thereby penetrating between the first surface 110 and the second surface 120. The maximum diameter of the through-hole 15 is, for example, 25 μm or more and 50 μm or less. On the other hand, in this example, the diameter of the through-hole 15 has a minimum value in approximately the central portion of the glass substrate 11. This minimum value is, for example, 10 μm or more and 30 μm or less. The minimum diameter of the through-hole 15 may also be 40% or more and 60% or less of the maximum diameter of the through-hole 15.

[0143] Next, as Figure 5 As shown, a first metal layer 100a is formed on the first surface 110, the second surface 120, and the inner surface of the through-hole 15 of the glass substrate 11. The first metal layer 100a functions as a seed layer in the process of forming the second metal layer 100b (described later) through electrolytic plating. In this example, the first metal layer 100a is Cu formed by electroless plating. The first metal layer 100a is expected to be deposited with a thickness of 0.1 μm or more and 3 μm or less; in this example, it is deposited with a thickness of 0.3 μm. Furthermore, the first metal layer 100a can be any metal that functions as a seed layer for electrolytic plating; for example, it can be a metal containing Ti, Ni, Cr, Ti, W, etc., or different metals can be stacked. Moreover, the method for forming the seed layer is not limited to electroless plating; sputtering can also be used. Although not shown, a bonding layer may be formed on the first surface 110, the second surface 120, and the inner surface of the through-hole 15 of the glass substrate 11 before the formation of the first metal layer 100a. The bonding strength of the bonding layer to the glass substrate 11 is higher than that to the first metal layer 100a of the glass substrate 11. Examples of materials constituting the bonding layer are metal oxides such as zinc oxide.

[0144] Next, as Figure 6As shown, a resist mask RM is formed in a given region of the first metal layer 100a on the second surface 120 side of the glass substrate 11. Next, an electroplating process is performed in which a second metal layer 100b is grown outside the region where the resist mask RM is formed, i.e., in the region where the first metal layer 100a is exposed, by electroplating. The electroplating process includes a first electroplating process in which the second metal layer 100b is formed under first conditions and a second electroplating process in which the second metal layer 100b is formed under second conditions that are different from the first conditions.

[0145] Figure 7 This diagram illustrates the first electroplating process. The first condition is set such that the growth rate of the second metal layer 100b on the first surface 110 side becomes approximately the same as the growth rate of the second metal layer 100b on the second surface 120 side.

[0146] Figure 8 This diagram illustrates the second electroplating process. The second condition is set such that the growth rate of the second metal layer 100b on the first surface 110 side is greater than the growth rate of the second metal layer 100b on the second surface 120 side. For example, compared to the second surface 120 side, electroplating can be performed on the first surface 110 side in an environment where the plating solution is more concentrated. Alternatively, compared to the second surface 120 side, electroplating can be performed on the first surface 110 side in an environment where the current supplied to the through-hole 15 is greater.

[0147] Through this process, the region CA on the first surface 110 side of the through hole 15 is blocked by the second metal layer 100b. On the other hand, a space 18 surrounded by the second metal layer 100b is formed in the region of the through hole 15 outside the region CA. At the portion of the through hole 15 that becomes the minimum portion 15m, the diameter of the space 18 is preferably 10% or more and 50% or less of the diameter dcm of the minimum portion 15m. That is, the combined thickness de of the first metal layer 100a and the second metal layer 100b of the minimum portion 15m is preferably 25% or more and 45% or less of the diameter dcm. In this example, the first metal layer 100a and the second metal layer 100b are formed such that the thickness de is approximately 30% of the minimum diameter dcm of the through hole 15. This space 18 and the space on the second surface 120 side of the glass substrate 11 are connected via an opening 180. The second metal layer 100b is, for example, Cu. Alternatively, the second metal layer 100b can also be a metal containing Au, Ag, Pt, Al, Ni, Cr, Sn, etc.

[0148] Before the through hole 15 is blocked by the sealing portion 105, the through hole 15 remains open, thus allowing the plating solution to pass through it. According to this manufacturing method, since the sealing portion 105 is formed last, the second metal layer 100b can also be stably formed.

[0149] Reference Figures 30A to 30D An example of the first electroplating process and the second electroplating process will be described in detail.

[0150] The plating solution used in the first electrolytic plating process includes, for example, copper sulfate pentahydrate and sulfuric acid. Copper sulfate pentahydrate is represented by the molecular formula CuSO4·5H2O. Sulfuric acid is represented by the molecular formula H2SO4. The weight percentage of copper sulfate pentahydrate in the plating solution is also referred to as the first ratio L1. The weight percentage of sulfuric acid in the plating solution is also referred to as the second ratio L2. In the plating solution of the first electrolytic plating process, it is preferable that the second ratio L2 is greater than the first ratio L1. This reduces the difference in Cu concentration between the plating solution on the first surface 110 or the second surface 120 of the glass substrate 11 and the plating solution inside the through-hole 15.

[0151] Figure 30A This is a diagram illustrating an example of the first electroplating process. (See diagram for example.) Figure 30A As shown, current can be supplied to the through-hole 15 from both the first surface 110 side and the second surface 120 side of the glass substrate 11. The current supplied to the through-hole 15 from the first surface 110 side is also referred to as the first current i1. The current supplied to the through-hole 15 from the second surface 120 side is also referred to as the second current i2. In the first electrolytic plating process, it is preferable that the difference between the first current i1 and the second current i2 is small. For example, the first current i1 is more than 0.8 times and less than 1.2 times the second current i2. As a result, the difference in growth rate of the second metal layer 100b can be suppressed within the first surface 110, the second surface 120, and the through-hole 15.

[0152] The plating solution used in the second electroplating step can also contain copper sulfate pentahydrate and sulfuric acid, similar to that in the first electroplating step. In the plating solution of the second electroplating step, it is preferable that the first ratio L1 is greater than the second ratio L2. This allows the Cu concentration of the plating solution in the first surface 110 or the second surface 120 of the glass substrate 11 to be higher than the Cu concentration of the plating solution inside the through-hole 15.

[0153] Figures 30B to 30D This is a diagram illustrating an example of the second electroplating process. (See diagram for example.) Figure 30BAs shown, in the second electroplating process, it is preferable that the first current i1 is greater than the second current i2. For example, the first current i1 is 1.5 times greater than the second current i2. This allows the growth rate of the second metal layer 100b in the first surface 110 to be greater than the growth rate of the second metal layer 100b in the second surface 120. The first current i1 can be 2.0 times or more, 3.0 times or more, or 5.0 times or more of the second current i2. Alternatively, the first current i1 can be less than 5.0 times the second current i2.

[0154] The end of the through hole 15 on the first surface 110 side is also referred to as the first end 16, and the end of the through hole 15 on the second surface 120 side is also referred to as the second end 17. This is because the first ratio L1 in the plating solution is greater than the second ratio L2, or the first current i1 is greater than the second current i2, such as... Figure 30C As shown, the growth rate of the second metal layer 100b at the first end 16 can be greater than the growth rate of the second metal layer 100b at the second end 17. For example, as... Figure 30C As shown, the cross-section of the second metal layer 100b can partially have a circular shape centered on the first end 16.

[0155] When the first current i1 is greater than the second current i2, the growth rate of the second metal layer 100b located on the inner side of the through hole 15 is greater the closer it is to the first surface 110. Therefore, as Figure 30C As shown, the thickness of the second metal layer 100b located on the inner side of the through hole 15 decreases as it approaches the second surface 120. As a result, the surface Bs of the second metal layer 100b formed around the first end 16 on the inner side of the through hole 15 moves further away from the central axis ac and toward the second surface 120.

[0156] The second metal layer 100b grown around each position of the first end 16 of the through hole 15 merges, as... Figure 30D As shown, on the first surface 110 side, the second metal layer 100b can close the through hole 15. In this way, a closed portion 105 including the second metal layer 100b is obtained.

[0157] The growth rate of the second metal layer 100b located on the inner side of the through hole 15 decreases as it moves further away from the inner side. Therefore, the curvature of the surface Bs of the portion of the closed portion 105 that overlaps with the central axis ac tends to be the maximum.

[0158] The position and shape of the surface Bs of the closed portion 105 can be changed by adjusting the first current i1 and the second current i2. Alternatively, the position and shape of the surface Bs of the closed portion 105 can be changed by adjusting the first ratio L1 and the second ratio L2. Figure 31 This shows the ratio of the first current i1 to the second current i2. Figures 30B to 30D The example is a sectional view of the closed portion 105 obtained in a large case. For example... Figure 31 As shown, by increasing the difference between the first current i1 and the second current i2, the position of the surface Bs of the closed portion 105 can be changed towards the second surface 120. Furthermore, by increasing the difference between the first current i1 and the second current i2, the radius of curvature of the surface Bs of the thinnest part of the closed portion 105 can be made smaller.

[0159] Next, as Figure 9 As shown, remove the resist mask RM. Next, as... Figure 10 As shown, for example, the first metal layer 100a and the second metal layer 100b on the first surface 110 side of the glass substrate 11 are removed by CMP (Chemical Mechanical Polishing) to expose the first surface 110. Alternatively, the removal of the first metal layer 100a and the second metal layer 100b can also be performed using other processes such as wet etching, fly cutter-based grinding, or physical mechanical polishing. Figure 10 The processing can also be done in Figure 9 This is implemented before the processing.

[0160] Then, as Figure 11 As shown, on the second surface 120 side of the glass substrate 11, the first metal layer 100a is removed using the second metal layer 100b as a mask. In this way, a through electrode substrate 10 with through electrodes 100 disposed thereon is manufactured from the glass substrate 11. Figure 11 The processing can also be done in Figure 10 This is implemented before the processing. Additionally, in Figure 2 The diagram shows a through electrode 100 as a conductor that integrates the first metal layer 100a and the second metal layer 100b.

[0161] [Example]

[0162] Figure 12 It is an electron microscope image of a cross-section through the electrode. Figure 12 The electron microscope image shown is a cross-section of the through electrode 100 manufactured using the aforementioned method for manufacturing the through electrode substrate 10. This cross-section is a surface cut along the central axis including the through hole 15. Figure 12 As shown, a structure with a closed portion 105 can be achieved in the through electrode 100.

[0163] <Second Implementation Method>

[0164] The through electrode in the second embodiment is manufactured using a different method than that described in the first embodiment.

[0165] Figures 13-15This diagram illustrates a method for manufacturing a through-electrode substrate according to the second embodiment of this disclosure. In the second embodiment, as... Figure 13 As shown in the first embodiment Figure 5 After the first metal layer 100a is formed, no further formation occurs. Figure 6 The resist mask RM shown is used to form... Figure 7 as well as Figure 8 The second metal layer 100b is shown. In this state, as... Figure 14 As shown, the first metal layer 100a and the second metal layer 100b are removed by CMP processing on the first surface 110 side and the second surface 120 side of the glass substrate 11, so that both surfaces of the glass substrate 11 are exposed.

[0166] Next, as Figure 15 As shown, on the second surface 120 side, a third metal layer 100c is formed as a seed layer by sputtering. Next, a resist mask RM is formed on a portion of the third metal layer 100c. Figure 15 In the process, the third metal layer 100c is formed only on the second surface 120. Although not shown, a portion of the third metal layer 100c may also be formed on the second metal layer 100b inside the through hole 15. Then, a metal layer is grown on the third metal layer 100c by electroplating. Then, the resist mask RM is removed to remove any unwanted metal layers. Thus, a metal layer is obtained that is... Figure 2 The same through-electrode 100 is used. By performing electroplating under conditions that facilitate the growth of a metal layer on the second surface 120 side, i.e., on the third metal layer 100c (different from the conditions for growing the second metal layer 100b), the thickness of the pad portion 102 containing the metal layer on the second surface 120 can also be made thicker than the thickness of the through portion 103. The so-called unwanted metal layer refers to the portion of the third metal layer 100c covered by the resist mask RM. Depending on the conditions of the electroplating process, sometimes a metal layer is formed from the region of the through hole 15 toward the first surface 110 side. In this case, the metal layer on the first surface 110 side can also be removed.

[0167] <Third Implementation Method>

[0168] The through electrode in the third embodiment is manufactured using a different method than that described in the first embodiment.

[0169] Figures 16-18 This diagram illustrates a method for manufacturing a through-electrode substrate according to a third embodiment of this disclosure. In the third embodiment, as in the first embodiment... Figure 7When the resist mask RM is formed in this way, a first metal layer 100a covered by the first metal layer RM far from the through hole 15 is also formed on the first surface 110 side. Then, as Figure 16 As shown, the second metal layer 100b is grown through electroplating under the first condition. Then, as... Figure 17 As shown, the second metal layer 100b is grown through electroplating under the second condition. Consequently, the region CA of the through-hole 15 is blocked by the second metal layer 100b. By forming a resist mask RM on the first surface 110 side, the area where the second metal layer 100b grows can be restricted on the first surface 110 side. Therefore, the second metal layer 100b grows in a shorter time. Thus, a highly efficient electroplating process can be achieved. Then, as... Figure 18 As shown, the resist mask RM is removed. Then, the first metal layer 100a and the second metal layer 100b protruding from the through hole 15 toward the first surface 110 are removed by CMP or similar processes. Thus, a metal layer with... Figure 2 The same through electrode 100 has the same structure.

[0170] <Fourth Implementation Method>

[0171] In the first embodiment described above, the through hole 15 is located between the first surface 110 and the second surface 120, and the diameter of the through hole 15 is a minimum, minimal portion 15m. In the fourth embodiment, a through hole 15A with a different shape than the through hole 15 in the first embodiment is formed on the glass substrate 11. Specifically, the through hole 15A in the fourth embodiment does not have this minimal portion 15m.

[0172] Figure 19 This is a cross-sectional view illustrating the through-hole structure in the fourth embodiment of this disclosure. A through-hole 15A is formed in the glass substrate 11. The through-hole 15A has a shape in which the diameter increases from the first surface 110 side toward the second surface 120 side. The through-hole 15A is formed, for example, by sandblasting from the second surface 120 side of the glass substrate 11. The through-hole 15A can also be formed by etching with a given etchant after irradiating the glass substrate 11 with a laser under given conditions. The through-hole electrode 100A includes a pad portion 102A, a through portion 103A, and a closing portion 105A. The closing portion 105A is configured to block the first surface 110 side of the through-hole 15A, that is, the side with the smaller diameter of the through-hole 15A. The space 18A surrounded by the through-hole electrode 100A inside the through-hole 15A is configured to be connected to the space on the second surface 120 side of the glass substrate 11 via an opening 180A. In addition, in Figure 19 as well as Figure 20 In, also with Figure 2 Similarly, the through electrode 100 is shown as a conductor that combines the first metal layer 100a and the second metal layer 100b.

[0173] Figure 20 This diagram illustrates the structure (closure) of the first surface side of the through electrode in the fourth embodiment of this disclosure. The structure of the closure 105A is also the same as that of the closure 105 in the first embodiment. Figure 20 As shown, if each part is defined, the construction of the closed part 105A also satisfies at least one of the conditions R1 to R3. Figure 20 In the example shown, the structure of the closure 105A satisfies all the conditions of correlation R1 to R3. Due to the difference in the shape of the through hole, the increase from da to da1 and da2 is less in the closure 105A compared to the closure 105, but even in the closure 105A, it can have a strong holding force against the force from the surface Ts side toward the interior of the through hole 15.

[0174] <Fifth Implementation>

[0175] In the fifth embodiment, a through electrode 100B in which a filler is disposed in the space 18 of the through hole 15 formed in the first embodiment will be described.

[0176] Figure 21 This is a diagram illustrating the cross-sectional structure of the through electrode in the fifth embodiment of this disclosure. First, the first embodiment is prepared... Figure 11 The glass substrate 11 and the through electrode 100 are shown in the indicated state. Next, as... Figure 21 As shown, a filler 109 is disposed in the space 18 through the opening 180. The filler 109 is formed by flowing into the space 18 as a fluid from the opening 180 and then solidifying. In this example, the filler 109 may contain an insulating material or a conductive material such as a metal paste. Examples of insulating materials are organic resins, inorganic compounds, etc. Examples of organic resins are polyimide, acrylic acid, etc. Examples of inorganic compounds are silicon oxides, etc. The filler 109 may also contain both organic resins and inorganic compounds. Examples of metal pastes are pastes containing Cu, Ni, Ag, Au, etc. To form the filler 109, the material flowing into the space 18 from the opening 180 may be photosensitive or non-photosensitive. By including the above-mentioned materials in the filler 109, compared to filling the space 18 using a second metal layer 100b through electrolytic plating, manufacturing costs can be reduced, or stress caused by the through electrode can be reduced. Although not shown in the figure, as long as the reliability of the through electrode substrate 10 can be maintained, there may be gaps or other spaces inside the filler 109 or between the filler 109 and the substrate 11.

[0177] exist Figure 21In the example shown, the surface Fs of the filler 109 is configured to be the same surface as the second metal layer 100b on the second surface 120 side. Although not shown, the surface Fs can also be configured not to be the same surface as the second metal layer 100b. That is, the surface Fs can be configured to form the same surface as the second surface 120, or it can be located inside the through hole 15, or it can be located at a position that protrudes further than the second metal layer 100b.

[0178] <Sixth Implementation>

[0179] In the fifth embodiment, when the filler 109 is a conductor, the through electrode 100B and the wiring layer can be connected even at the location overlapping with the through hole 15, even on the second surface 120 side. In the sixth embodiment, an example of the through electrode 100C in which the filler 109 is made of a conductive material will be described.

[0180] Figure 22 This is a diagram illustrating the cross-sectional structure of the through electrode in the sixth embodiment of this disclosure. Figure 22 The through electrode 100C shown also includes the one configured in the second embodiment. Figure 14 The through electrode shown contains a filler 109. The filler 109 is a conductor. The through electrode 100C includes: a closing portion 105, which includes a second metal layer 100b exposed from the through hole 15 on the first surface 110 side; and a filler 109C, which is exposed from the through hole 15 on the second surface 120 side. On the other hand, in the portion other than the through hole 15, the first surface 110 and the second surface 120 of the glass substrate 11 are exposed.

[0181] Figure 23 This is a diagram illustrating the cross-sectional structure of the wiring substrate in the sixth embodiment of this disclosure. Figure 23 The wiring substrate 80C shown, based on the wiring substrate 80 in Embodiment 1, further includes a wiring laminate 70C disposed on the second surface 120 side of the glass substrate 11. The wiring layer 720C in the wiring laminate 70C is connected to the filler 109C in the through electrode 100C. Figure 23 The wiring layer 720C in the middle contacts the surface Fs of the filler 109. In this example, the contact area between the surface Fs of the filler 109 and the wiring layer 720C, when viewed along a direction perpendicular to the second surface 120, is as follows: Figure 23As shown, the contact area is surrounded by the outer edge of the second surface 120 of the through-hole 15. Although not shown, the contact area may also overlap with the through-hole 15 and not be surrounded by the outer edge of the through-hole 15. This contact area is defined by an opening formed in the interlayer insulating layer 710C. A wiring layer 720C connected to the filler 109C is disposed in the opening. Although omitted in the figure, pads connected to bumps may also be formed on the surface of the wiring layer stack 70C located on the side opposite to the glass substrate 11.

[0182] <Seventh Implementation>

[0183] In the seventh embodiment, the structure of the through electrode 100C in the sixth embodiment is applied to... Figure 19 An example of the case of the through electrode 100A in the fourth embodiment shown will be described.

[0184] Figure 24 This is a diagram illustrating the cross-sectional structure of the through electrode in the seventh embodiment of this disclosure. Figure 24 Except for the points described below, the through electrode 100D shown is similar to that in the fourth embodiment. Figure 19 The through electrode 100A shown is the same.

[0185] • No solder pads are provided in section 102A.

[0186] • A filler 109 is disposed inside the through electrode.

[0187] Figure 24 The through-electrode 100D shown includes: a sealing portion 105A, which includes a second metal layer 100b exposed from the through-hole 15A on the first surface 110 side; and a filler 109D, exposed from the through-hole 15A on the second surface 120 side. On the other hand, the first surface 110 and the second surface 120 of the glass substrate 11 are exposed in the portion other than the through-hole 15A. With this configuration, similar to the case in the sixth embodiment, the wiring layer can be connected to the filler 109D even without using the pad portion 102A.

[0188] <Eighth Implementation>

[0189] In the eighth embodiment, another method for manufacturing a through electrode that achieves the correlation R1 (da < dc < da + db × 2) will be described.

[0190] Figures 25-28 This diagram illustrates a method for manufacturing a through-electrode substrate according to the eighth embodiment of this disclosure. First, a hole is formed on the glass substrate 11 from the second surface 120 side by sandblasting or the like. Alternatively, the glass substrate 11 may be irradiated with a laser under given conditions, and then etched using a given etching solution to form the hole. Figure 25As shown, a hole 150E is formed that does not extend to the first surface 110 side. The hole 150E has a bottom located on the first surface 110 side. Such a hole is also referred to as a bottomed hole. Next, as... Figure 26 As shown, a first metal layer 100a, serving as a seed layer, is formed from the second surface 120 side by sputtering, forming a resist mask RM, and a second metal layer 100b is formed by electrolytic plating. The electrolytic plating process here utilizes conditions where the growth rate on the surface side of the glass substrate 11 is relatively slow. For example, a plating solution incorporating additives is used. Consequently, the bottom portion BP of the second metal layer 100b with the bottom hole 150E is thicker than other portions of the second metal layer 100b. Furthermore, the space 18E surrounded by the second metal layer 100b is disposed within the bottom hole 150E, connected to the space on the second surface 120 side of the glass substrate 11 via the opening 180E.

[0191] Next, remove the resist mask RM. Next, as... Figure 27 As shown, the first metal layer 100a, where the resist mask RM is disposed, is removed. Then, as... Figure 28 As shown, the first surface 110 side of the glass substrate 11 is etched by CMP or similar process, exposing the second metal layer 100b on the first surface 110 side. This removes the bottom portion with the bottom hole 150E and forms a through hole 15E. Alternatively, etching can be performed with the first metal layer 100a remaining, exposing the first metal layer 100a towards the first surface 110 side.

[0192] Thus, a form with and Figure 19 A through electrode 100E with a similar structure to the through electrode 100A of the fourth embodiment shown. Figure 28 The parameters defining the correlation R1 are shown in the diagram. Here, da represents the thickness in the central axis ac. In the through electrode 100A, the structure satisfies all correlations R1, R2, and R3, but in the through electrode 100E, the structure only satisfies correlation R1.

[0193] <Ninth Implementation>

[0194] The aforementioned electronic unit 1000 is, for example, mounted on portable terminals (portable phones, smartphones, and laptop computers, etc.), information processing devices (desktop computers, servers, car navigation systems, etc.), home appliances, and various other electronic devices.

[0195] Figure 29This diagram illustrates an electronic device incorporating the electronic unit of the first embodiment of this disclosure. The electronic unit 1000 is, for example, mounted on a portable terminal (portable phone, smartphone, and laptop computer, etc.), an information processing device (desktop computer, server, car navigation system, etc.), a home appliance, and various other electronic devices. As examples of electronic devices equipped with the electronic unit 1000, a smartphone 500 and a laptop computer 600 are shown. These electronic devices have a control unit 1100, which is composed of a CPU or the like that executing application programs to perform various functions. Among these functions is the use of output signals from the electronic unit 1000. Alternatively, the electronic unit 1000 may also have the functions of the control unit 1100.

[0196] <10th Implementation>

[0197] In the 10th embodiment, refer to Figure 32 The radius of curvature ra of the surface Bs of the thinnest portion of the closed portion 105 of the through electrode 100 will be explained. The radius of curvature ra is the reciprocal of the curvature of the surface Bs of the thinnest portion of the closed portion 105.

[0198] The radius of curvature ra can also be defined as the ratio relative to the radius rb of the through hole 15 in the first surface 110. ra / rb is preferably 0.2 or more. Therefore, when the closed portion 105 is pressed, excessive compressive force generated on the surface Bs of the thinnest part of the closed portion 105 can be suppressed. Thus, defects such as cracks in the thinnest part of the closed portion 105 can be suppressed. ra / rb can be 0.4 or more, or 0.6 or more.

[0199] On the other hand, when ra / rb is too large, it is believed that the compressive force generated in the closure 105 cannot be properly distributed around it when the closure 105 is pressed, thereby causing damage to the closure 105. Taking this into consideration, ra / rb is preferably 1.5 or less. ra / rb can be 1.3 or less, or 1.1 or less.

[0200] Appropriately setting the thickness da of the thinnest portion of the sealing portion 105 is also an effective method to suppress defects such as cracks. Thickness da is preferably 10 μm or more. This ensures the mechanical strength of the thinnest portion of the sealing portion 105. Thickness da can be 20 μm or more, or 30 μm or more. On the other hand, if the thickness da is excessively large, the internal stress generated in the sealing portion 105 is difficult to alleviate at the surface Ts. In this case, damage to the sealing portion 105 and cracks in the substrate 11 are considered to occur. Considering this, thickness da is preferably 100 μm or less. Thickness da can be 80 μm or less, or 60 μm or less.

[0201] <11th Implementation>

[0202] In the 11th embodiment, refer to Figures 33-35 An example of electrically connecting the through electrode 100 of the through electrode substrate 10 and the electronic device 92 will be described. Specifically, a method will be described in which the electronic device 92 is heated while a pressure is applied toward the through electrode substrate 10, thereby electrically connecting the electrodes of the through electrode 100 and the electronic device 92. This method is also known as TCB (Thermal Compression Bonding).

[0203] like Figure 33 As shown, the electronic device 92 includes: a first surface 925 and a second surface 926; and an electrode 922 located on the first surface 925. The electrode 922 may include pads. The electrode 922 may also include pads and pillars located on the pads. When the spacing P of the electrodes 922 is small, a structure including pillars is particularly adopted for the electrode 922. The spacing P is, for example, 100 μm or less. Bumps 892 may also be provided on the electrode 922.

[0204] First, such as Figure 33 As shown, a connector 200 is mounted on the second surface 926 of the electronic device 92. Next, as... Figure 34 As shown, by moving the connector 200 toward the through electrode substrate 10, the bump 892 contacts the closing portion 105 of the through electrode 100. Furthermore, the connector 200 is used to heat the electronic device 92. This allows for a heating and pressing process where the electronic device 92 is heated while pressure is applied toward the through electrode substrate 10. Then, the temperature of the connector 200 is maintained at a constant level while the pressure toward the through electrode substrate 10 is zero or approximately zero. Thus, as... Figure 35 As shown, the electrode 922 can be connected to the closure portion 105 via the bump 892.

[0205] In order to connect the electrode 922 to the sealing portion 105 through the heating and pressing process, it is preferable that the force applied to one electrode 922 is a threshold or higher. The threshold is, for example, 0.001 kgf, 0.006 kgf, or 0.1 kgf. In this case, the sealing portion 105 is required to withstand a force of a threshold or higher.

[0206] In the through electrode substrate 10 of this application, at least one of the above-mentioned correlations R1 to R3 is satisfied. As a result, the closed portion 105 can withstand forces exceeding the threshold value.

[0207] <12th Implementation>

[0208] In the 12th embodiment, an example of the structure for electrically connecting the closed portion 105 of the electrode substrate 10 and the electrode 922 of the electronic device 92 will be described.

[0209] like Figure 36 As shown, a diffusion prevention film 94 may be provided on the electrode 922 of the electronic device 92. The diffusion prevention film 94 may include, for example, a nickel layer on the electrode 922 and a gold layer on the nickel layer. The diffusion prevention film 94 may be formed by electroless plating or electrolytic plating.

[0210] like Figure 36 As shown, a diffusion prevention film 106 may also be provided on the closed portion 105 through the electrode substrate 10. The diffusion prevention film 106 may also include a nickel layer on the closed portion 105 and a gold layer on the nickel layer, similar to the diffusion prevention film 94.

[0211] <13th Implementation>

[0212] In the 13th embodiment, an example of the structure for electrically connecting the closed portion 105 of the electrode substrate 10 and the electrode 922 of the electronic device 92 will be described.

[0213] like Figure 37 As shown, an electrode 107 may be provided on the closed portion 105 that passes through the electrode substrate 10. The electrode 107 may include a pad. The electrode 107 may also include a pad and a post located on the pad.

[0214] and Figure 36 Similarly, a diffusion-prevention film 106 can be provided on electrode 107. Although not shown, the diffusion-prevention film 106 may not be provided. Furthermore, with... Figure 36 Similarly, a diffusion prevention film 94 may also be provided on electrode 922. Although not shown, the diffusion prevention film 94 may not be provided.

[0215] <14th Implementation>

[0216] In the 14th embodiment, an example of the structure for electrically connecting the enclosure 105 of the through electrode substrate 10 and the electrode 922 of the electronic device 92 will be described. For example... Figure 38 As shown, the electrode 922 of the electronic device 92 can also be connected to the enclosure 105 through the electrode substrate 10 without using bumps. Both the electrode 922 and the enclosure 105 may contain copper. In this case, the electrode 922 and the enclosure 105 can be connected using a Cu-Cu bond.

[0217] <15th Implementation>

[0218] In the 15th embodiment, an example of the structure for electrically connecting the enclosure 105 of the through electrode substrate 10 and the electrode 922 of the electronic device 92 will be described. For example... Figure 39 As shown, the electrode 922 of the electronic device 92 can also be connected to the electrode 107 on the closed portion 105 of the electrode substrate 10 without using bumps. Both the electrode 922 and the electrode 107 may contain copper. In this case, the electrode 922 and the electrode 107 can be connected using a Cu-Cu bond.

[0219] <16th Implementation>

[0220] In the 16th embodiment, refer to Figure 40A as well as Figure 40B An example of the cross-sectional structure of the wiring layer 720 connected to the closed portion 105 of the through electrode substrate 10 will be described. Figure 40A This is a cross-sectional view showing the wiring layer. Figure 40B This is a top view showing the wiring layer. Figure 40A It is along Figure 40B A cross-sectional view of the AA line of the wiring layer.

[0221] like Figure 40A as well as Figure 40B As shown, the contact area where the wiring layer 720 contacts the closure portion 105 can include multiple areas. For example, the wiring layer 720 can include: wiring 722 extending in the in-plane direction through the first surface 110 of the electrode substrate 10; and multiple connection layers 721 connecting the wiring 722 to the closure portion 105. Figure 40B As shown, when viewed along a direction perpendicular to the first surface 110, the multiple connecting layers 721 can be surrounded by the outer edge of the through hole 15 in the first surface 110.

[0222] <17th Implementation>

[0223] In the 17th embodiment, refer to Figure 41A as well as Figure 41B An example of the cross-sectional structure of the wiring layer 720 connected to the closed portion 105 of the through electrode substrate 10 will be described. Figure 41A This is a cross-sectional view showing the wiring layer. Figure 41B This is a top view showing the wiring layer. Figure 41A It is along Figure 41B A cross-sectional view of the BB line of the wiring layer.

[0224] and Figure 40A as well as Figure 40BSimilarly, the contact area where the wiring layer 720 contacts the closure portion 105 can include multiple areas. For example, the wiring layer 720 can include: wiring 722 extending in a plane direction through the first surface 110 of the electrode substrate 10; and multiple connection layers 721 connecting the wiring 722 to the closure portion 105. Figure 41B As shown, when viewed along a direction perpendicular to the first surface 110, the multiple connecting layers 721 can overlap with the outer edge of the through hole 15 in the first surface 110.

[0225] <18th Implementation>

[0226] In the 18th embodiment, refer to Figure 42A as well as Figure 42B An example of the cross-sectional structure of the wiring layer 720 connected to the closed portion 105 of the through electrode substrate 10 will be described. Figure 42A This is a cross-sectional view showing the wiring layer. Figure 42B This is a top view showing the wiring layer. Figure 42A It is along Figure 42B A cross-sectional view of the CC line of the wiring layer.

[0227] like Figure 42A as well as Figure 42B As shown, when viewed along a direction perpendicular to the first surface 110, the contact area where the wiring layer 720 contacts the closure portion 105 can surround the outer edge of the through hole 15 in the first surface 110. For example, the wiring layer 720 can include wiring 722 extending in the in-plane direction through the first surface 110 of the electrode substrate 10. The wiring 722 can also have a width w1 larger than the diameter dc of the through hole 15 in the first surface 110.

[0228] <19th Implementation>

[0229] In the 19th embodiment, refer to Figure 43A as well as Figure 43B An example of the cross-sectional structure of the wiring layer 720 connected to the closed portion 105 of the through electrode substrate 10 will be described. Figure 43A This is a cross-sectional view showing the wiring layer. Figure 43B This is a top view showing the wiring layer. Figure 43A It is along Figure 43B A cross-sectional view of the DD line of the wiring layer.

[0230] like Figure 43A as well as Figure 43B As shown, the wiring layer 720 may include wiring 722 connected to the closure portion 105 and extending in the in-plane direction of the first surface 110. For example, the wiring layer 720 may include a plurality of wiring 722 connected to the closure portion 105 and extending in mutually different directions.

[0231] The present invention has been described above as one embodiment, but the embodiments described above can be combined with each other or applied interchangeably. Furthermore, the embodiments described above can also be modified as follows. For example, even in the fourth embodiment (… Figure 19 Even without a through hole 15A having a minimum portion 15m, the through electrode substrate can be manufactured using the method described in the first, second, or third embodiments, as in the case where the through electrode 100A is formed like the through hole 15A in the first embodiment.

[0232] Symbol Explanation

[0233] 10: Through electrode substrate; 11: Glass substrate; 15, 15A, 15E: Through-hole; 15m: Minimum portion; 16: First end; 17: Second end; 18, 18A, 18E: Space; 50: Wiring structure portion; 70, 70C: Wiring laminate; 80, 80C: Wiring substrate; 91: Printed wiring board; 92, 93: Electronic device; 100, 100A, 100C, 100D, 100E: Through electrode; 100a: First metal layer; 100b: Second metal layer; 100c: Third metal layer; 102, 102A: Pad portion; 103 103A: Through section; 105, 105A: Closed section; 109, 109C, 109D: Filler; 110, 810, 910: First surface; 120, 820, 920: Second surface; 150E: Bottom hole; 180, 180A, 180E: Opening; 500: Smartphone; 600: Notebook computer; 710: Interlayer insulation layer; 720, 720C: Wiring layer; 811, 911, 921, 922, 923: Electrode; 891, 892, 893: Bump; 1000: Electronic unit; 1100: Control unit.

Claims

1. A through - electrode substrate, comprising: A substrate having a first surface and a second surface, including through - holes penetrating between the first surface and the second surface; and A through - electrode disposed inside the through - holes, The through - electrode includes: a first portion blocking the through - hole on the first - surface side; and a second portion disposed along the inner surface of the through - hole, In the first portion, the thinnest portion along the direction perpendicular to the first surface has a thickness A, in the second portion, the thinnest portion has a thickness B, and the diameter of the through - hole on the first surface has a length C, Satisfying the relationship A < C < A + B×2, The second portion continuously extends from the first portion along the inner surface of the through - hole to the second - surface side of the through - hole, The through - electrode substrate further includes a filler disposed in the space surrounded by the through - electrode inside the through - hole, The filler includes a material having insulating properties.

2. The through - electrode substrate according to claim 1, wherein The first portion includes a portion where the thickness of the first portion becomes thicker as it moves farther away from the central axis of the through - hole.

3. A through - electrode substrate, comprising: A substrate having a first surface and a second surface, including through - holes penetrating between the first surface and the second surface; and A through - electrode disposed inside the through - holes, The through - electrode includes: a first portion blocking the through - hole on the first - surface side; and a second portion disposed along the inner surface of the through - hole, The first portion includes a portion where the thickness of the first portion along the direction perpendicular to the first surface becomes thicker as it moves farther away from the central axis of the through - hole, The second portion continuously extends from the first portion along the inner surface of the through - hole to the second - surface side of the through - hole, The through - electrode substrate further includes a filler disposed in the space surrounded by the through - electrode inside the through - hole, The filler includes a material having insulating properties.

4. The through - electrode substrate according to any one of claims 1 to 3, wherein When observed in a cross - section including the central axis of the through - hole, the surface of the first portion on the inner side of the through - hole has the maximum curvature at the thinnest portion of the first portion.

5. The through - electrode substrate according to any one of claims 1 to 3, wherein The thinnest portion in the first portion is located at a position corresponding to the central axis of the through - hole.

6. The through - electrode substrate according to any one of claims 1 to 3, wherein The through - hole has a minimum portion where the diameter of the through - hole becomes a minimum value, The minimum portion is located between the first surface and the second surface, In the minimum portion, the through - electrode does not block the through - hole.

7. The through - electrode substrate according to any one of claims 1 to 3, wherein The through - electrode substrate further includes: a wiring layer disposed on the first - surface side of the substrate and in contact with the through - electrode, When viewed along a direction perpendicular to the first surface, the contact area of ​​the wiring layer in contact with the through electrode overlaps with the through hole.

8. The through-electrode substrate according to claim 7, wherein, When viewed along a direction perpendicular to the first surface, the contact area is surrounded by the outer edge of the through hole in the first surface.

9. The through-electrode substrate according to claim 7, wherein, When viewed along a direction perpendicular to the first surface, the contact area overlaps with the outer edge of the through hole in the first surface.

10. The through-electrode substrate according to claim 7, wherein, The contact area comprises multiple regions.

11. The through-electrode substrate according to any one of claims 1 to 3, wherein, The surface of the first portion on one side of the first face is located inside the through hole.

12. The through-electrode substrate according to claim 11, wherein, The surface of the first part has an arched structure, the arched structure including a portion that, when viewed perpendicularly to the first surface, faces the second surface the further away from the center of the through hole.

13. The through-electrode substrate according to any one of claims 1 to 3, wherein, The through-electrode substrate also includes: An interlayer insulating layer, located on the first surface, has an opening; and A wiring layer, which includes a portion located at the opening and connected to the through electrode, The first part includes a surface on one side of the first surface that is located on the same surface as the first surface. The interlayer insulating layer includes the portion that overlaps with both the surface of the first portion and the first surface of the substrate when viewed perpendicularly to the first surface.

14. The through-electrode substrate according to any one of claims 1 to 3, wherein, When viewed in cross-section containing the central axis of the through hole, the surface of the first portion located on the inner side of the through hole has a radius of curvature ra at the thinnest part of the first portion. The radius of the first surface of the through hole has a length rb. The relationship ra / rb≥0.2 is satisfied.

15. An electronic unit having: The through-electrode substrate according to any one of claims 1 to 3; and An electronic device electrically connected to the through electrode of the through electrode substrate.

16. The electronic unit according to claim 15, wherein, The electronic device includes electrodes electrically connected to the through electrode. The electrode of the electronic device overlaps with the through electrode when viewed along a direction perpendicular to the first surface of the through electrode substrate.

17. A method for manufacturing a through-electrode substrate, comprising: A seed layer is formed along the inner surface of a substrate having a first surface and a second surface and including a through hole penetrating between the first surface and the second surface; Through the electroplating treatment under condition 1, an electroplated layer is formed on the seed layer up to a thickness sufficient to prevent the through-hole from becoming blocked; and Through an electroplating process under the second condition where the growth rate on the first side is faster than that on the second side, an electroplated layer is further formed to block the first side of the through hole. The fluid flows into the interior of the through hole from one side of the second surface. By solidifying the fluid, a filler is formed inside the through-hole to fill the portion outside the electroplated layer. The filler contains an insulating material.

18. A method for manufacturing an electronic unit, which is the method for manufacturing the electronic unit as described in claim 16, wherein the method for manufacturing the electronic unit comprises the following steps: The electronic device is heated while applying pressure toward the through electrode substrate, thereby electrically connecting the through electrode and the electrode.

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