Method for manufacturing a device, device manufacturing apparatus, and mounting structure

Abstract

The present disclosure provides a manufacturing method of a device, a device manufacturing apparatus, and a mounting structure. In a method of inspecting a device manufacturing apparatus (300) provided with a chip (102) and a substrate (106) opposed to the chip (102) and ultrasonically bonded via a bump (104), the method includes: a step of measuring a change in a resistance value of each of a plurality of sensors (107) buried directly below a substrate electrode (105) on which the bump (102) is pressed when the bump (104) provided to the chip (102) is mounted; and a step of inferring a bonding surface of the bump (104) to the substrate electrode (105) based on the change in the resistance value. Thus, an offset amount of a mounting position of the chip (102) to the substrate (106) can be calculated with high precision.

Description

Technical Field

[0001] This disclosure relates to a method for manufacturing the equipment, as well as an apparatus for manufacturing the equipment and an installation structure. Background Technology

[0002] Previously, ultrasonic bonding and thermoforming methods, which are solid-state bonding methods, were known as methods for mounting chips onto a substrate via bumps. Bumps are wiring leads on the substrate or protruding connection electrodes formed on the chip.

[0003] Specifically, when mounting a chip to a substrate using ultrasonic bonding, ultrasonic vibrations are applied while a bump on one electrode of the chip and substrate is pressed against another electrode of the chip and substrate. This promotes plastic deformation of the bump and electrode, resulting in tight contact between the newly formed surfaces of the bump and electrode. Consequently, metal atoms diffuse between the bump and electrode, bonding the bump and electrode.

[0004] In ultrasonic bonding and thermoforming methods, flip-chip bonders are used. Flip-chip bonders have monitoring functions for mounting load and ultrasonic power during the process. However, these monitoring functions only monitor the values ​​of mounting load and ultrasonic power applied to the entire chip. Therefore, in the aforementioned flip-chip bonders, it is difficult to measure the force, i.e., the deformation, acting on the joint between the electrodes and bumps on the chip or substrate.

[0005] Therefore, for example, the prior art disclosed in JP Patent No. 3599003 (hereinafter referred to as "Patent Document 1") involves placing a strain gauge directly below the electrode forming the bump and measuring the change in the resistance value of the strain gauge during the installation process. This configuration enables the measurement of deformation occurring at the junction of the electrode and the bump. The strain gauge consists of a single resistive element with multiple conductors arranged at equal intervals in a straight line, one of which is embedded directly below the electrode.

[0006] In this prior art, a strain gauge, formed in a linear fashion, is embedded directly beneath the electrode. Therefore, even if the pressure exerted by the bumps on the electrode is constant, a change in the position of the bumps on the electrode will cause a deviation in the deformation measured by the strain gauge. In other words, for example, when calculating the offset of the chip's mounting position on the substrate (position offset) based on the strain gauge measurements, a deviation in deformation reduces the accuracy of the position offset calculation. The position offset is affected by the assembly precision of the device, thus significantly impacting the workmanship of MEMS (Micro Electro Mechanical Systems) and optical devices. In other words, there is room for improvement in the calculation of position offset in the prior art. Summary of the Invention

[0007] This disclosure provides an inspection method and an apparatus for a device manufacturing apparatus capable of calculating with high precision the offset of a chip from its mounting position on a substrate.

[0008] One embodiment of this disclosure is an inspection method for an apparatus for manufacturing a device comprising a chip ultrasonically bonded via bumps and a substrate facing the chip. The inspection method includes: measuring the resistance changes of each of the multiple sensors when the bumps on the chip are mounted on a substrate with a plurality of sensors embedded directly beneath an electrode where the bumps are pressed; further, the method includes inferring the bonding surface between the bumps and the electrode based on the resistance changes; and determining whether the bonding state between the chip and the substrate is acceptable based on the inferred bonding surface.

[0009] Furthermore, one embodiment of the apparatus disclosed herein includes: a worktable for holding a substrate bonded to a chip via bumps; and a bonding head for pressing the chip against the substrate and applying ultrasonic vibrations to the chip. Further, it includes: a substrate with a plurality of sensors embedded directly below an electrode where the bumps are pressed, and a measurement unit for measuring changes in the resistance values ​​of each of the plurality of sensors when the bumps on the chip are mounted; and a processing unit for determining the bonding surface between the bumps and the electrodes based on the changes in resistance values.

[0010] This disclosure provides a method for manufacturing a device capable of calculating the offset of a chip from its mounting position on a substrate with high precision, as well as a device manufacturing apparatus and a mounting structure.

[0011] Furthermore, further advantages and effects of this disclosure become apparent from the following description and accompanying drawings. Moreover, these advantages and / or effects are provided separately through several embodiments and the features described in the description and drawings, but it is not necessary to provide all of them in order to obtain one or more of the same features. Attached Figure Description

[0012] Figure 1 This is a structural diagram of the equipment manufacturing apparatus in Embodiment 1 of this disclosure.

[0013] Figure 2 This is a perspective view of the substrate electrodes and substrate of the equipment manufacturing apparatus viewed from the Z-axis direction.

[0014] Figure 3 yes Figure 2 The image shows a 3-3 line cross-sectional view of the substrate.

[0015] Figure 4 This is a structural diagram of a modified example of the equipment manufacturing apparatus in Embodiment 1.

[0016] Figure 5This is a flowchart illustrating the inspection method for the manufacturing apparatus of this equipment.

[0017] Figure 6 This is a diagram illustrating an example of the structure of the substrate electrode and substrate included in the device manufacturing apparatus of Embodiment 2 of this disclosure.

[0018] Figure 7 This is a structural diagram of the equipment manufacturing apparatus in Embodiment 3 of this disclosure.

[0019] Figure 8 This is a perspective view of the substrate electrode and substrate as seen from the negative Z-axis direction (i.e., the lower side) of the substrate electrode of the equipment manufacturing apparatus.

[0020] Figure 9 yes Figure 8 The 9-9 line sectional view shown.

[0021] Figure 10 This is a diagram used to illustrate the ultrasonic bonding step in the manufacturing apparatus of this device.

[0022] Figure 11 This is a flowchart illustrating the inspection method for the manufacturing apparatus of this equipment.

[0023] Figure 12 This is a perspective view of the substrate electrode when inspecting using the apparatus described in Embodiment 4 of this disclosure. Detailed Implementation

[0024] Hereinafter, appropriate embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Furthermore, in this specification and the accompanying drawings, structural elements having substantially the same function are given the same reference numerals, thereby omitting redundant descriptions.

[0025] (Implementation Method 1)

[0026] The following describes the equipment manufacturing apparatus 300 in Embodiment 1 of this disclosure by item.

[0027] <Structure of Equipment Manufacturing Unit 300>

[0028] First, refer to Figure 1 An example of the structure of the equipment manufacturing apparatus 300 in Embodiment 1 of this disclosure will be described.

[0029] Figure 1 This is a structural diagram of the equipment manufacturing apparatus 300 in Embodiment 1 of this disclosure.

[0030] The equipment manufacturing apparatus 300 of Embodiment 1 includes an inspection device 101, a bonding device 114, etc., and constitutes the manufacturing equipment apparatus 200. The equipment apparatus 200 may be, for example, an apparatus composed of electrical components with semiconductors or an apparatus composed of electrical components without semiconductors.

[0031] Hereinafter, in Embodiment 1, as an apparatus for manufacturing an apparatus 300, an apparatus for manufacturing an apparatus consisting of electrical components accompanied by semiconductors will be described.

[0032] In addition, Figure 1 Subsequently, the X-axis, Y-axis, and Z-axis directions represent directions parallel to the X-axis, Y-axis, and Z-axis, respectively. The X-axis and Y-axis are orthogonal to each other. The X-axis and Z-axis are orthogonal to each other. The XY-plane represents an imaginary plane parallel to the X-axis and Y-axis. The XZ-plane represents an imaginary plane parallel to the X-axis and Z-axis. The YZ-plane represents an imaginary plane parallel to the Y-axis and Z-axis. Furthermore, within the X-axis direction, the direction indicated by the arrow is designated as the positive X-axis direction, and the opposite direction is designated as the negative X-axis direction. Within the Y-axis direction, the direction indicated by the arrow is designated as the positive Y-axis direction, and the opposite direction is designated as the negative Y-axis direction. Within the Z-axis direction, the direction indicated by the arrow is designated as the positive Z-axis direction, and the opposite direction is designated as the negative Z-axis direction. The Z-axis direction is, for example, equal to the vertical direction, and the X-axis and Y-axis directions are, for example, equal to the horizontal direction.

[0033] like Figure 1 As shown, the device 200 manufactured by the device manufacturing apparatus 300 of Embodiment 1 includes: a chip 102, a chip electrode 103, a bump 104, a substrate electrode 105, and a substrate 106. The device 200 is configured to be integrally formed by ultrasonic bonding or thermoforming.

[0034] The chip 102, for example, has a plurality of chip electrodes 103 disposed around one side of the chip 102. The chip electrodes 103 have bumps 104 formed on the surface of the chip electrodes 103, which contain conductive material.

[0035] <Structure of the inspection device 101 in the equipment manufacturing apparatus 300>

[0036] Next, an example of the structure of the inspection device 101 of the equipment manufacturing apparatus 300 will be described.

[0037] Inspection device 101 of equipment manufacturing apparatus 300, such as Figure 1 As shown, it includes a measuring unit 108 and a processing unit 109, etc.

[0038] The substrate 106 has a plurality of substrate electrodes 105 disposed opposite to the bumps 104 of the chip 102. In addition, the material of the substrate electrodes 105 can be a metal that can be solid-state bonded to the material of the bumps 104, such as gold or aluminum.

[0039] Furthermore, the substrate 106 has a plurality of piezoresistive sensors 107 embedded directly below the substrate electrodes 105. The piezoresistive sensors 107 have a piezoresistive effect in which the resistance value changes when mechanical deformation is applied. The structure of the piezoresistive sensors 107 will be described in detail later.

[0040] A piezoresistive sensor 107 is connected to one end of an electrical wiring 110. The other end of the electrical wiring 110 is connected to a measuring unit 108. A processing unit 109 is electrically connected to the measuring unit 108 via the electrical wiring. Furthermore, the processing unit 109 is an example of a position offset calculation unit in Embodiment 1.

[0041] <Structure of Piezoresistive Sensor 107>

[0042] Next, refer to Figure 2 as well as Figure 3 The structure of the piezoresistive sensor 107 will be described.

[0043] Figure 2 This is a perspective view of the substrate electrode 105 and substrate 106 of the equipment manufacturing apparatus 300 viewed from the Z-axis direction. Figure 3 yes Figure 2 The 3-3 sectional view of the substrate 106 shown.

[0044] Piezoresistive sensors 107a, 107b, 107c and 107d are disposed directly below the substrate electrode 105 as described above.

[0045] In addition, without distinguishing between piezoresistive sensor 107a, piezoresistive sensor 107b, piezoresistive sensor 107c and piezoresistive sensor 107d, they may be referred to simply as "sensor 107" in the following description.

[0046] Specifically, such as Figure 3 As shown, sensor 107 is embedded in the insulating layer 111 constituting substrate 106, directly below substrate electrode 105 (in the negative Z direction). The shape of sensor 107 is as follows... Figure 2 As shown, for example, it is rectangular in shape. Furthermore, the lengths of the short and long sides of the sensor 107 are represented as W and Ln, respectively (n is a natural number greater than 1).

[0047] Multiple sensors 107 are arranged radially relative to the center O of the substrate electrode 105, for example. In other words, multiple sensors 107 are arranged around the center O of the substrate electrode 105. Furthermore, one of the short sides of each of the multiple sensors 107 is configured to face each other. Further, the long sides of each of the multiple sensors 107 are configured along an imaginary line (not shown) extending radially from the center O of the substrate electrode 105.

[0048] In addition, such as Figure 2 As shown, the plurality of sensors 107 are preferably arranged at equal intervals on an imaginary circle (not shown) centered at the center O of the substrate electrode 105. Thus, within the range of mounting position accuracy of the chip 102 relative to the substrate 106, the mating surface of the bump 104 can reliably overlap with at least one of the plurality of sensors 107.

[0049] Furthermore, in Embodiment 1, a structure with four sensors 107 was described as an example, but it is not limited to this. The number of sensors 107 can be arbitrary, as long as they are two or more and do not overlap.

[0050] Furthermore, the sensor 107 may be formed of an n-type Si material, for example, which has a piezoresistive effect, but is not particularly limited to n-type Si. The sensor 107 may include metals such as CuNi-based, NiCr-based, and Ti, or semiconductors such as Ge and GaAs that utilize the piezoresistive effect.

[0051] Furthermore, in Embodiment 1, an example using a piezoresistive sensor 107 was described, but the embodiment is not limited to this. In addition to the piezoresistive sensor 107, any sensor that measures changes in physical properties when pressure is applied can be used, for example, a sensor that measures changes in physical properties when pressure is applied.

[0052] like Figure 2 As shown, sensor 107 is connected to electrical wiring 110 on its two opposing short sides. Electrical wiring 110 is used to measure the resistance value Rn (n is a natural number greater than or equal to 1) of sensor 107 from one short side to the other. Specifically, electrical wiring 110 consists of electrical wiring 110a, 110b, 110c, and 110d used to measure the resistance values ​​R1, R2, R3, and R4 of piezoresistive sensors 107a, 107b, 107c, and 107d.

[0053] At least one sensor 107 among multiple sensors 107 Figure 2 The piezoresistive sensor 107a) is connected to electrical wiring 112 inside the long side direction. Figure 2 The “r” shown indicates the connection point of electrical wiring 112 to sensor 107.

[0054] Electrical wiring 112 and the aforementioned measuring unit 108 (see reference) Figure 1 Electrical connection.

[0055] Here, the electrical wiring 112 connected to the connection position r is used to measure the resistance value Rref of the sensor 107. In other words, the resistance value Rref is the resistance value of the sensor 107 in the region from the location of the electrical wiring 110a connected to the short side of the sensor 107 on the center O side to the connection position r, within the resistance value of the sensor 107 in the long side direction.

[0056] <Resistance value change based on piezoresistive effect>

[0057] Next, the resistance value change of the piezoresistive effect of the piezoresistive sensor 107 will be explained.

[0058] like Figure 2 As shown, if the bump 104 of the chip 102 is pressed against the substrate electrode 105, the pressing force of the bump 104 acts on the mating surface S (also called the bump mating surface S) surrounded by the imaginary annular dashed line. Due to the pressing force, the four sensors 107 located directly below the substrate electrode 105 are deformed e.

[0059] Here, the aforementioned mating surface S is the surface of the mating surface S of the protrusion 104 to the substrate electrode 105 viewed from the Z-axis direction at a specified moment during the installation process.

[0060] At this time, when the same deformation e is applied to the sensor 107, the resistance value Rn (n is a natural number greater than or equal to 1) of the sensor 107 in the long side direction changes from Rn0 to Rn0+ΔRe. Rn0 is the resistance value of the sensor 107 in the long side direction before the bump 104 is pressed against the substrate electrode 105. Furthermore, ΔRe is the amount of change (increase or decrease) in the resistance value of the sensor 107 after the deformation e is generated.

[0061] The rate of change of the resistance value Rn, ΔRe / Rn0, is expressed by the following equation (1).

[0062] ΔRe / Rn0=Kx×exx+Ky×eyy+Kz×ezz···(1)

[0063] In Equation (1), exx represents the vertical deformation component of deformation e in the X-axis direction. Exx is the deformation component that expands the substrate electrode 105 in the X-axis direction. In Equation (1), Kx represents the strain coefficient of exx (the piezoresistive coefficient relative to the deformation). In addition, the value of K varies depending on the type of material constituting the sensor 107 and the crystallization direction of the material constituting the sensor 107.

[0064] Furthermore, in Equation (1), eyy is the vertical deformation component of deformation e in the Y-axis direction. Eyy is the deformation component that expands the substrate electrode 105 in the Y-axis direction. Ky in Equation (1) represents the strain coefficient of eyy.

[0065] Furthermore, in equation (1), ezz is the vertical deformation component of deformation e in the Z-axis direction. Ezz is the deformation component that compresses the substrate electrode 105. In equation (1), Kz represents the strain coefficient of ezz.

[0066] <Function of the piezoresistive sensor 107>

[0067] Next, the function of the piezoresistive sensor 107 will be explained.

[0068] During installation, the area of ​​the mating surface S increases as the protrusion 104 deforms. Figure 2 The L′n (where n is a natural number greater than or equal to 1) shown represents the length of the long side of the sensor 107 in the region where the sensor 107 overlaps with the mating surface S. Specifically, the length L′n corresponds to... Figure 2 The lengths shown are L′1, L′2, L′3, and L′4.

[0069] In other words, the area of ​​the region where sensor 107 overlaps with the mating surface S can be represented by the formula area ≈ W × L′n. W is the length of the short side of sensor 107.

[0070] Furthermore, if the pressing force of the protrusion 104 is applied to the mating surface S, the sensor 107 in the area where the sensor 107 overlaps with the mating surface S will be deformed by eS.

[0071] At this time, in multiple sensors 107, there are regions where the resistance value changes due to the deformation eS (≈W×L′n) and regions where the resistance value does not change (≈W×(LL′n)).

[0072] Here, when the installation process is a hot-pressing method, due to the application of the installation load, compressive deformation (vertical deformation ezz) is uniformly generated in the joint surface S.

[0073] At this point, the vertical deformation exx is a very small value relative to the vertical deformation ezz. This is because the Poisson's ratio vx of the material of sensor 107 is vx << 1. Similarly, since the Poisson's ratio vy of the material of sensor 107 is vy << 1, the vertical deformation eyy is a very small value relative to the vertical deformation ezz.

[0074] Therefore, the value of the deformation eS generated in the area where the sensor 107 overlaps with the mating surface S is the same (uniform) at any position (area) within the mating surface S.

[0075] On the other hand, when the installation process involves ultrasonic bonding, the deformation eS in the area where the sensor 107 overlaps with the bonding surface S generates vertical deformations exx, eyy, and ezz. Furthermore, the generated vertical deformations exx, eyy, and ezz overlap with the deformations generated in the planar direction (parallel to the XY plane) based on ultrasonic vibration.

[0076] At this point, the closer to the outer periphery of the region near the center of the joint surface S, the greater the overlap of the planar deformation based on ultrasonic vibration. However, the planar deformation is the repetitive stress of ultrasonic vibration. Therefore, if the planar deformation is treated as a value averaged over a small time interval, the value of the deformation eS of the region where the sensor 107 overlaps with the joint surface S is the same (uniform) at any location (region) within the joint surface S.

[0077] Furthermore, when the rate of resistance change when applying deformation eS to sensor 107 is set as ΔRS / Rn0, the resistance value Rn (specifically, R1, R2, R3, R4) in the long side direction of sensor 107 is expressed as the following equation (2).

[0078] Rn=ΔRS / Rnox(L′n / Ln)xRn0+(Ln-L′n) / Ln×Rn0···(2)

[0079] In equation (2), ΔRS is the change in resistance of sensor 107 that generates deformation eS.

[0080] On the other hand, for example, within the resistance value along the long side of the piezoresistive sensor 107a, the region from the position of the electrical wiring 110a connected to the short side of the piezoresistive sensor 107a on the center O side to the connection position r converges within the mating surface S. Therefore, in the region of the piezoresistive sensor 107a that converges within the mating surface S, deformation eS is also caused. Thus, the resistance change rate ΔRref / Rref0 is expressed as the following equation (3).

[0081] ΔRref / Rref0=ΔRS / Rn0···(3)

[0082] In equation (3), Rref0 is the resistance value of the region from the location of the electrical wiring 110a connected to the short side of the piezoresistive sensor 107a on the center O side before the bump 104 is pressed against the substrate electrode 105 to the connection location r.

[0083] Therefore, the changes in the resistance value Rn of each sensor 107 and the changes in at least one resistance value Rref are measured. Based on equations (2) and (3), the length L′n of each sensor 107 in the long side direction can be inferred.

[0084] In this case, it is preferable to configure the sensor 107 such that the aspect ratio of the short side to the long side of the sensor 107 is L >> W. In other words, for example, when the contour of the mating surface S has curvature, the area where the sensor 107 overlaps with the mating surface S is not strictly rectangular. Therefore, the length L′n inferred based on equations (2) and (3) under the premise of a rectangle contains errors. However, if L >> W is set, the error can be reduced. Thus, the accuracy of the inferred length L′n can be improved.

[0085] Furthermore, each sensor 107 is preferably configured radially relative to the center O of the substrate electrode 105, and extends to the outside of the largest possible mating surface S during installation. This expands the detection range of the inferred length L′n.

[0086] Furthermore, when using a cylindrical bump 104, it is preferable that the length from the connection position r of the electrical wiring 112 to the center O of the substrate electrode 105 is shorter than the value obtained by subtracting the maximum value of the mounting deviation from the top radius of the bump 104 (corresponding to the side opposite to the substrate electrode 105). Further, when the bump 104 is a cylindrical bump, it is preferable that the length from the connection position r of the electrical wiring 112 to the center O of the substrate electrode 105 is shorter than the value obtained by subtracting the maximum value of the mounting deviation from the base radius of the bump 104 (corresponding to the side where the chip 102 is connected).

[0087] In other words, the length from the connection point r of the electrical wiring 112 to the center O of the substrate electrode 105 is shortened. Therefore, after the installation process begins, an installation load is applied to the bump 104, and at the instant the bump 104 begins to break, the measurement range of the resistance value Rref converges within the mating surface S. Thus, the change in length L′n can be measured from the initial stage of the installation process.

[0088] Furthermore, the number of measurements of the resistance value Rref is determined by the material and orientation of the sensor 107. For example, the sensor 107 is assumed to be made of a cubic crystal material such as Si or Ge. Further, it is assumed that multiple sensors 107 are formed as a single-crystal layer with a cubic crystal face orientation (100), and that the long sides of adjacent sensors 107 form an angle of 90° through etching. In this case, due to the symmetry of the crystal structure, the sensitivity of the piezoresistive effect of each sensor 107 is the same as its mechanical properties.

[0089] Specifically, among the various sensors 107, the strain coefficient KL in the long side direction of the XY plane, the strain coefficient KW in the direction perpendicular to the long side direction (short side direction) of the XY plane, and the strain coefficient Kz in the Z-axis direction are all the same value. Furthermore, the Poisson's ratio vL in the long side direction and the Poisson's ratio vW in the short side direction are the same value for each sensor 107. Further, the vertical deformation eLL caused by compression in the Z-axis direction of the sensor 107 in the long side direction and the vertical deformation eWW caused by compression in the short side direction of the sensor 107 are the same value.

[0090] Based on the above, the resistance change rate ΔRS / Rn0 when the deformation eS is applied to the sensor 107 in the same way can be expressed as the following equation (4), and the resistance change rate ΔRS / Rn0 of all sensors 107 is the same value.

[0091] ΔRS / Rn0=KL×eLL+KW×eWW+Kz×ezz···(4)

[0092] Therefore, if the resistance value Rref of any one of the multiple sensors 107 is measured, the overlap length L′n of all the sensors 107 can be inferred.

[0093] Furthermore, since the sensitivity and mechanical properties of the piezoresistive effect in each direction of the sensor 107 differ among multiple sensors 107, the resistance value Rref set on each sensor 107 can be measured separately. Therefore, even with sensors 107 of different properties, the overlap length L′n can be inferred.

[0094] <Variation Example>

[0095] The following is for reference Figure 4 A variation of the equipment manufacturing apparatus 300 in Embodiment 1 will be described.

[0096] Figure 4 This is a structural diagram of a modified example of the equipment manufacturing apparatus 300 in Embodiment 1 of this disclosure.

[0097] like Figure 4As shown, the modified device manufacturing apparatus 300 includes multiple sensors 107 and a piezoresistive sensor 113 specifically for measuring the resistance value Rref.

[0098] The piezoresistive sensor 113 is formed, for example, in a quadrilateral shape. Furthermore, the piezoresistive sensor 113 is embedded, for example, directly below the center O of the substrate electrode 105 (in the negative Z-axis direction).

[0099] Two electrical wires 112 of the piezoresistive sensor 113 are connected. For example, one electrical wire 112 is connected to the center of the piezoresistive sensor 113. The other electrical wire 112 is connected to one of the four sides of the piezoresistive sensor 113.

[0100] Measurement Unit 108 (Reference) Figure 1 The resistance value Rref of the region from the location of one electrical wiring 112 connected to the piezoresistive sensor 113 to the location of another electrical wiring 112 is measured.

[0101] In other words, according to the above-described modification, a piezoresistive sensor 113 is provided. Therefore, even when the length of each sensor 107 in the long side direction is relatively short, the length L′n can be inferred (refer to...) based on the measured resistance value Rref of the piezoresistive sensor 113 and the resistance value Rn of each sensor 107. Figure 2 Furthermore, the length of each sensor 107 along its long side can be shortened. Therefore, the design freedom of the substrate 106 is increased.

[0102] <Inspection Methods for Equipment Manufacturing Unit 300>

[0103] Next, refer to Figure 5 The inspection method for the equipment manufacturing device 300 is explained.

[0104] Figure 5 This is a flowchart illustrating the inspection method for the equipment manufacturing apparatus 300.

[0105] The inspection device 101 of the equipment manufacturing apparatus 300 is, for example, installed in Figure 1 The connecting device 114 shown is used to inspect the manufactured equipment 200.

[0106] The bonding device 114 includes a worktable 115 on which the substrate 106 is placed, a bonding head 116 for holding and pressing the chip 102, etc.

[0107] like Figure 5As shown, the bonding device 114 first moves the chip 102 to the substrate 106 while the chip 102 is fixed at the front end of the bonding head 116 (step S1). Then, the bonding device 114 operates to make the chip 102 contact the substrate 106 via the bump 104.

[0108] Next, when the chip 102 contacts the substrate 106 via the bump 104, the bonding device 114 applies load, ultrasonic power, heat, etc., while in contact. Thus, the chip 102 is mounted on the substrate 106 (step S2). At this time, elastic and plastic deformations occur at the bump 104 and the substrate electrode 105. Furthermore, with these elastic and plastic deformations, mechanical deformation also occurs at the sensor 107 via the insulating layer 111.

[0109] At this time, the resistance value Rn of each of the multiple sensors 107 changes according to the amount of mechanical deformation due to the piezoresistive effect. Furthermore, the measuring unit 108 measures the changing resistance value Rn of the multiple sensors 107 during the installation process in real time and sends the measured data to the processing unit 109 (step S3).

[0110] Furthermore, when the installation process involves ultrasonic bonding, as described above, the resistance value Rn of the sensor 107 varies in accordance with the ultrasonic vibration. Therefore, the measuring unit 108 sends the average value of the resistance value Rn over a short period of time as measurement data to the processing unit 109.

[0111] Next, the processing unit 109 calculates the length L′n of the overlapping area between each sensor 107 and the mating surface S based on the acquired measurement data (step S4).

[0112] Next, the processing unit 109 converts the calculated length L′n into coordinates Pn (n is a natural number greater than or equal to 1) of a point on the contour of the bonding surface S with the center O of the substrate electrode 105 as the origin, based on position information related to the position of each sensor 107 and dimension information related to the size of each sensor 107, and performs calculations (step S5). Thus, multiple points overlapping the contour of the bonding surface S with the sensor 107 (equivalent to...) Figure 2 The coordinates P1, P2, P3, and P4 shown become clear.

[0113] Next, the processing unit 109 infers the outline of the joint surface S based on the polygon formed by connecting adjacent coordinates Pn (step S6).

[0114] In addition, the position information and size information of each of the above sensors 107 can be preset in the storage unit of the processing unit 109, or they can be configured to be sent from a device outside the processing unit 109.

[0115] Furthermore, the contour of the mating surface S is through Figure 2 The shape around the joint surface S is represented by a dashed line with the center O′ as the origin.

[0116] Next, the processing unit 109 calculates the coordinates of the center O′ of the bonding surface S with the center O of the substrate electrode 105 as the origin based on the deduced contour of the bonding surface S (step S7). Further, the processing unit 109 calculates the offset (mounting position offset) between the center O′ of the bonding surface S and the center O of the substrate electrode 105 (step S8). The mounting position offset represents the offset of the bump 104 from the mounting position of the substrate electrode 105.

[0117] In this case, since the protrusion 104 is circular, the mating surface S is also circular in the hot-pressing method. If at least three coordinate points Pn exist, the radius and center position of the mating surface S can be immediately deduced. Therefore, at least three sensors 107 can be arranged directly below the substrate electrode 105.

[0118] Furthermore, when the protrusion 104 is elliptical in shape and a thermoforming method is used, or when the protrusion 104 is circular in shape and an ultrasonic bonding method is used, the bonding surface S is elliptical. When the outline of the bonding surface S is elliptical, two of the four sensors 107 are configured such that the long sides of the sensors 107 are along the major axis of the elliptical bonding surface S, and the short sides of the sensors 107 are opposite each other. Further, the other two sensors 107 are configured such that the long sides of the sensors 107 are along the minor axis of the elliptical bonding surface S, and the short sides of the sensors 107 are opposite each other. Thus, four coordinates Pn on the outline of the bonding surface S can be obtained. Furthermore, based on these obtained coordinates Pn, the outline of the bonding surface S can be inferred. Additionally, in ultrasonic bonding, the direction of ultrasonic vibration is along the major axis of the elliptical bonding surface S.

[0119] Furthermore, since the area of ​​the mating surface S remains almost unchanged during installation, two sensors 107 can be embedded directly below the substrate electrode 105. Therefore, based on the coordinates Pn obtained from the two sensors 107 and the shape of the surface of the protrusion 104 before mating that opposes the substrate electrode 105, the coordinates of the center O′ of the mating surface S and the installation position offset can be immediately determined.

[0120] By means of embodiment 1, multiple sensors 107 can be arranged radially, and the shape and installation position offset of the bonding surface S toward the substrate electrode 105 can be inferred nondestructively based on the resistance values ​​of the multiple sensors 107 that change during installation.

[0121] Thus, for example, it is possible to nondestructively infer the shape and installation position offset of the mating surface S without relying on statistical guarantees based on the increase of n through destructive testing. As a result, it is possible to prevent the outflow of products judged to be non-conforming into the market.

[0122] Furthermore, through Implementation Method 1, the changes in the shape of the mating surface S and the amount of installation position offset during the installation process can be monitored in real time. Therefore, it is easy to perform timing detection of installation position offset and derive installation conditions to achieve the desired shape of the bump mating surface. As a result, it is expected that defect analysis and development time will be significantly reduced.

[0123] (Implementation Method 2)

[0124] The following is for reference Figure 6 The apparatus 300 of Embodiment 2 of this disclosure will now be described.

[0125] Figure 6 This diagram illustrates a structural example of the substrate electrode 205 and substrate 206 included in the device manufacturing apparatus 300 according to Embodiment 2 of this disclosure. Additionally, Figure 6 This is a perspective view of the substrate electrode 205 and substrate 206 as viewed from the Z-axis direction. Figure 6 In China, targeting and Figure 2 Structural elements that are identical in the diagram use the same symbols, and descriptions are omitted.

[0126] like Figure 6 As shown, the device manufacturing apparatus 300 of Embodiment 2 replaces the substrate electrode 105 of Embodiment 1 and includes a substrate electrode 205.

[0127] Furthermore, the device manufacturing apparatus 300 of Embodiment 2 replaces the plurality of piezoresistive sensors 107 of Embodiment 1 and includes piezoresistive sensors 208a, piezoresistive sensors 208b, piezoresistive sensors 208c and piezoresistive sensors 208d.

[0128] Hereinafter, without distinguishing between piezoresistive sensor 208a, piezoresistive sensor 208b, piezoresistive sensor 208c, and piezoresistive sensor 208d, they will be referred to as "sensor 208".

[0129] The multiple sensors 208 are arranged radially relative to the center O of the substrate electrode 205, similar to the multiple sensors 107 in Embodiment 1.

[0130] In addition, each sensor 208 has multiple sensor modules 207.

[0131] Sensor module 207, for example, comprises an n-type Si material exhibiting piezoresistive effect. Multiple sensor modules 207 are arranged linearly and separately from each other, and as shown... Figure 3 As shown, it is embedded in the substrate 106.

[0132] The sensor module 207 has opposing first and second sides in a direction orthogonal to the arrangement direction, for example, it is configured by a quadrilateral shape.

[0133] The sensor module 207 is connected to electrical wiring 210a, electrical wiring 210b, electrical wiring 210c, and electrical wiring 210d, collectively referred to as electrical wiring 210. Specifically, one electrical wiring 210 is connected to the first side among the four sides forming the sensor module 207. Another electrical wiring 210 is connected to the second side among the four sides forming the sensor module 207, on the side opposite to the first side (opposite side).

[0134] In other words, the individual sensor modules 207 constituting a sensor 208 are connected to the electrical wiring 210 at the same location. Furthermore, the electrical wiring 210 is... Figure 1 The measuring unit 108 shown is connected.

[0135] Furthermore, in Embodiment 2, a structure with four sensors 208 was described as an example, but the embodiment is not limited to this. The number of sensors 208 can be arbitrary, provided they are two or more and do not overlap.

[0136] <Function of the piezoresistive sensor 208>

[0137] Next, the function of the piezoresistive sensor 208 will be explained.

[0138] here, Figure 6 The Cn (where n is a natural number greater than or equal to 1) indicates a sensor module 207 that exists within the mating surface S of the protrusion 104 among the plurality of sensor modules 207 constituting sensor 208. For example, C1 indicates a sensor module 207 that exists within the mating surface S of the protrusion 104 among the plurality of sensor modules 207 constituting piezoresistive sensor 208a. Furthermore, Figure 6 The same applies to C2, C3, and C4 shown in the diagram.

[0139] also, Figure 6 The Dn (where n is a natural number greater than or equal to 1) shown represents the sensor module 207 that exists within the plurality of sensor modules 207 constituting sensor 208 but outside the mating surface S of the protrusion 104. For example, D1 represents the sensor module 207 that exists within the plurality of sensor modules 207 constituting piezoresistive sensor 208a but outside the mating surface S of the protrusion 104. Furthermore, Figure 6The same applies to D2, D3, and D4 shown in the diagram.

[0140] Furthermore, when the pressing force of the protrusion 104 is applied to the mating surface S, the sensor module 207 existing in the mating surface S of the protrusion 104 causes deformation eS.

[0141] At this time, in each sensor 208, as described above, there are sensor modules 207 within the range of the mating surface S shown by Cn, and sensor modules 207 outside the range of the mating surface S shown by Dn.

[0142] In other words, the sensor module 207 within the range of the mating surface S shown in Cn is one or more sensor modules whose resistance values ​​(e.g., equivalent to R1a, R1b, R1c) change due to deformation eS.

[0143] On the other hand, the sensor module 207 outside the range of the mating surface S shown in Dn is one or more sensor modules whose resistance value (e.g., equivalent to R1d) will not change due to deformation eS.

[0144] At this time, when the resistance change rate when the deformation eS is applied to the sensor module 207 in the same way is set to ΔRS / Rn0, the resistance change rate of the sensor module 207 that is wholly overlapped with the joint surface S within the range of the joint surface S shown in Cn is ΔRS / Rn0. On the other hand, the resistance change rate of the sensor module 207 that partially overlaps with the joint surface S within the range of the multiple sensor modules 207 in Cn is 0 (zero) and is a value in the range from 0 (zero) to ΔRS / Rn0 other than ΔRS / Rn0.

[0145] On the other hand, among the multiple sensor modules 207 constituting a sensor 208, the sensor module 207 closest to the center O of the substrate electrode 205 overlaps with the mating surface S at the earliest moment during the installation process.

[0146] Therefore, the processing unit 109 compares the resistance change rate of the sensor module 207 closest to the center O of the substrate electrode 205 among the plurality of sensor modules 207 constituting a sensor 208 with the resistance change rates of other sensor modules 207. Thus, the processing unit 109 is able to determine the sensor module 207 that overlaps with the bonding surface S.

[0147] Here, the position information related to the position of each sensor 208 and the size information related to the size of each sensor 208 are known.

[0148] Therefore, the processing unit 109 calculates based on the position information and size information of each sensor 208, as well as the information related to the sensor module 207 overlapping with the mating surface S. Figure 6 The distance PCn shown is (n is a natural number greater than or equal to 1).

[0149] Distance PCn is the distance from the center O of the substrate electrode 205 to the sensor module 207 located on the outermost periphery of the substrate electrode 205, where the resistance change rate is ΔRS / Rn0 or a value in the range from 0 (zero) to ΔRS / Rn0 other than 0 (zero) or ΔRS / Rn0. For example, distance PC1 is the distance from the center O of the substrate electrode 205 to the sensor module 207, which overlaps with the bonding surface S, is located on the outermost periphery of the substrate electrode 205, and constitutes the piezoresistive sensor 208a. Furthermore, Figure 6 The distances to PC2, PC3, and PC4 shown are also the same.

[0150] In Embodiment 2, sensors 208, each equipped with multiple sensor modules 207, are arranged radially, and the distance PCn from the center O of the substrate electrode 205 to the sensor module 207 where the resistance change rate changes is calculated. This allows for the non-destructive deduction of the shape and mounting position offset of the bonding surface S towards the substrate electrode 205.

[0151] Furthermore, through Embodiment 2, the size and arrangement spacing of the sensor modules 207 constituting the sensor 208 can be freely designed. Therefore, it is easy to add functions other than checking the shape of the bonding surface S and the mounting position offset to the same substrate electrodes 205.

[0152] (Implementation Method 3)

[0153] The following is a detailed description of the equipment manufacturing apparatus 401 in Embodiment 3 of this disclosure.

[0154] <Structure of Equipment Manufacturing Unit 401>

[0155] First, refer to Figure 7 The structure of the equipment manufacturing apparatus 401 in Embodiment 3 of this disclosure will be described.

[0156] Figure 7 This is a structural diagram of the equipment manufacturing apparatus 401 in Embodiment 3 of this disclosure.

[0157] The device manufacturing apparatus 401 in Embodiment 3 is an apparatus for manufacturing device 500. Specifically, the device manufacturing apparatus 401 is, for example, a semiconductor manufacturing apparatus or a device manufacturing apparatus for electrical components that do not involve semiconductors.

[0158] Hereinafter, in Embodiment 3, the manufacturing apparatus for the semiconductor device 500 will be described as device manufacturing apparatus 401.

[0159] The device 500 of embodiment 3, such as Figure 7 As shown, it includes a chip 405, a chip electrode 406, a bump 408, a substrate electrode 407, and a substrate 403. The equipment manufacturing apparatus 401 is configured to integrally form the equipment apparatus 500 by ultrasonic bonding.

[0160] In addition, equipment manufacturing device 401, such as Figure 7 As shown, the system includes: a worktable 402 for mounting the substrate 403, a joint head 404, a load cell 410, a vertical deformation sensor 411 serving as a first deformation detection unit, a planar deformation sensor 412 serving as a second deformation detection unit, a measuring unit 413, a memory 414, and a processing unit 415. The load cell 410 measures the load applied from the chip 405 to the substrate 403 in the Z-axis direction. Furthermore, the vertical deformation sensor 411 and the planar deformation sensor 412 are equivalent to the sensors described in Embodiment 1 above.

[0161] The connector 404 includes: an ultrasonic vibrator 409 that generates ultrasonic vibrations, a drive mechanism 400 that moves the chip 405 in the Z-axis direction, and a drive control unit 416 that controls the operation of the drive mechanism 400.

[0162] The drive mechanism 400 extends from the drive control unit 416 in the negative Z-axis direction, for example. A chip 405 is fixed to the front end of the drive mechanism 400, i.e., the ultrasonic vibrator 409. A plurality of chip electrodes 406 are disposed on the chip 405. The plurality of chip electrodes 406 are arranged separately from each other, for example, in the X-axis direction. The chip electrodes 406 are made of a material such as copper. However, the material of the chip electrodes 406 is not limited to copper; any metal capable of solid-state bonding with the bump 408 can be used, such as gold or aluminum.

[0163] The chip electrode 406 has a plurality of conductive bumps 408 disposed on an end face 406a in the negative Z-axis direction. The plurality of bumps 408 are arranged separately from each other in the X-axis direction. The plurality of bumps 408 contain, for example, a material such as copper. In addition, the material of the bumps 408 is not limited to copper, and may also be conductive materials such as gold, silver, aluminum, platinum, chromium, etc.

[0164] Furthermore, a plurality of substrate electrodes 407 are disposed at a distance from the end face 408a of the bump 408 in the negative Z-axis direction. A plurality of substrate electrodes 407 are disposed on the end face 403a (also referred to as the substrate surface) of the substrate 403 in the positive Z-axis direction. The materials of the plurality of substrate electrodes 407 are similar to those of the chip electrodes 406, including a metallic material capable of solid-state bonding with the bump 408.

[0165] The positive Z-axis end face 407a of the substrate electrode 407 is disposed opposite to the negative Z-axis end face 408a of the bump 408. On the other hand, the negative Z-axis end face 407b of the substrate electrode 407 is opposite to the positive Z-axis end face 403a of the substrate 403. In other words, the end face 407b of the substrate electrode 407 is the end face of the substrate electrode 407 opposite to the bump 408 side.

[0166] Furthermore, the vertical deformation sensor 411 and the planar deformation sensor 412, for example, are electrically connected to the measuring unit 413 via electrical wiring 418 while embedded in the substrate 403. The vertical deformation sensor 411 and the planar deformation sensor 412 will be described in detail later.

[0167] In addition, Figure 7 The example described uses a structure where a bump 408 is fixed to a chip electrode 406, but it can also be configured such that the bump 408 is fixed to a substrate electrode 407. In this case, the chip electrode 406 is positioned opposite the bump 408 at a distance from the end face 406b of the bump 408 fixed to the substrate electrode 407 in the positive Z-axis direction.

[0168] With the chip 405 fixed at its front end, the connector 404 transports the chip 405 to the substrate 403. Furthermore, when the chip 405 comes into contact with the substrate 403 via the bump 408, the connector 404 applies ultrasonic vibrations to the chip 405 while they are in contact. Thus, the chip 405 is bonded to the substrate 403.

[0169] The memory 414 is electrically connected to the measuring unit 413, the ultrasonic vibrator 409, the weighing sensor 410, and the processing unit 415 via electrical wiring. The memory 414 is, for example, a storage unit that includes RAM (Random Access Memory) or ROM (Read Only Memory). The memory 414 stores programs for implementing the functions of the equipment manufacturing apparatus 401. The stored programs are executed by the processing unit 415. As a result, multiple functions of the equipment manufacturing apparatus 401 can be realized.

[0170] The processing unit 415 is electrically connected to the drive control unit 416 via electrical wiring. The processing unit 415 is, for example, a processor such as a CPU (Central Processing Unit), a system LSI (Large Scale Integration), a microcomputer, or a DSP (Digital Signal Processor).

[0171] The measuring unit 413 is electrically connected to the vertical deformation sensor 411 and the planar deformation sensor 412 via electrical wiring 418. The measuring unit 413 is a processor such as a CPU.

[0172] <Structure of vertical deformation sensor 411 and planar deformation sensor 412>

[0173] Next, refer to Figure 8 as well as Figure 9 The structures of the vertical deformation sensor 411 and the planar deformation sensor 412, which are examples of sensors, will be described.

[0174] Figure 8 This is a perspective view of the substrate electrode 407 and the substrate 403 as viewed from the negative Z-axis direction (i.e., the lower side) of the substrate electrode 407. Figure 9 yes Figure 8 The 9-9 line sectional view shown.

[0175] like Figure 8 as well as Figure 9 As shown, the vertical deformation sensor 411 and the planar deformation sensor 412 are disposed in the region overlapping with the substrate electrode 407 in the Z-axis direction. The vertical deformation sensor 411 is a sensor that detects the amount of deformation of the electrode (e.g., the substrate electrode 407) in the Z-axis direction.

[0176] The vertical deformation sensor 411 and the planar deformation sensor 412 include, for example, strain gauges. The strain gauge, for example, outputs a voltage as the deformation amount based on the resistance value corresponding to the elastic or plastic deformation of the substrate electrode 407. Alternatively, the strain gauge may include metals such as CuNi-based, NiCr-based, or Ti, or semiconductors such as Si, Ge, or GaAs that utilize the piezoresistive effect. The vertical deformation sensor 411 and the planar deformation sensor 412 detect deformation information in real time.

[0177] here, Figure 8 The vibration directions D and D′ shown represent the directions of ultrasonic vibrations applied by the ultrasonic vibrator 409. For example, vibration direction D is equal to the negative X-axis direction, and vibration direction D′ is equal to the positive X-axis direction. Furthermore, vibration directions D and D′ are not limited to the X-axis direction; they can be directions parallel to the XY plane.

[0178] Furthermore, the planar deformation sensor 412 is a sensor that detects the amount of deformation proportional to the vibration width in the direction of the ultrasonic vibration applied by the ultrasonic vibrator 409 (the direction parallel to the XY plane).

[0179] As described above, the vertical deformation sensor 411 and the planar deformation sensor 412 are embedded in the substrate 403. Specifically, the vertical deformation sensor 411 and the planar deformation sensor 412 are disposed on the substrate 403 such that they are covered by the insulating layer 417 formed on the surface of the substrate 403.

[0180] Furthermore, the method of configuring the vertical deformation sensor 411 and the planar deformation sensor 412 onto the substrate 403 is not limited to the method described above. For example, the substrate electrode 407 may be configured in a recess formed on the surface of the substrate 403 to embed a portion of the vertical deformation sensor 411 and the planar deformation sensor 412, and disposed thereon.

[0181] However, when the recess in the substrate 403 is configured to embed the vertical deformation sensor 411 and the planar deformation sensor 412, the contact area of ​​the vertical deformation sensor 411 and the planar deformation sensor 412 with the substrate 403 increases. Consequently, the deformation amount of the substrate electrode 407 is difficult to transmit to the vertical deformation sensor 411 and the planar deformation sensor 412 respectively. Therefore, the detection sensitivity of the vertical deformation sensor 411 and the planar deformation sensor 412 may decrease.

[0182] In this regard, such as Figure 9 As shown, in the structure where the vertical deformation sensor 411 and the planar deformation sensor 412 are covered by the insulating layer 417 and embedded in the substrate 403, the substrate 403 does not require processing such as recessing. Therefore, by using only the insulating layer 417 with a photoresist or the like, the vertical deformation sensor 411 and the planar deformation sensor 412 can be easily insulated from the substrate electrode 407. Furthermore, the deformation amount of the substrate electrode 407 can be easily transmitted to the vertical deformation sensor 411 and the planar deformation sensor 412, respectively. This simplifies the construction of the substrate 403, thus improving reliability. In addition, it can suppress the increase in the manufacturing cost of the substrate 403. Furthermore, the detection sensitivity of the deformation amount of the substrate electrode 407 is improved. In other words, the structure in which the vertical deformation sensor 411 and the planar deformation sensor 412 are covered by the insulating layer 417 and embedded in the substrate 403 is more preferable.

[0183] Furthermore, the vertical deformation sensor 411 and the planar deformation sensor 412 on the substrate 403 are positioned, for example, directly below the substrate electrode 407. This "directly below" position refers to the area in the Z-axis direction where the substrate electrode 407 is projected onto the substrate 403 (in other words, orthographic projection). This "directly below" position includes the area near the center point of the substrate electrode 407 projected onto the substrate 403, and the area near the periphery of the substrate electrode 407.

[0184] By positioning the vertical deformation sensor 411 and the planar deformation sensor 412 directly below the substrate electrode 407, the distance between the substrate electrode 407 and the vertical deformation sensor 411 and the planar deformation sensor 412 can be reduced. Therefore, the deformation of the substrate electrode 407 is easily transmitted to the vertical deformation sensor 411 and the planar deformation sensor 412. This improves the detection sensitivity based on the deformation of the vertical deformation sensor 411 and the planar deformation sensor 412. In other words, a structure in which the vertical deformation sensor 411 and the planar deformation sensor 412 are positioned directly below the substrate electrode 407 is preferred.

[0185] Furthermore, the vertical deformation sensor 411 and the planar deformation sensor 412 are not limited to being disposed directly below a single substrate electrode 407, but can also be disposed separately below multiple substrate electrodes 407. For example, they can also be disposed below the first substrate electrode among multiple substrate electrodes 407 (e.g., Figure 1 A vertical deformation sensor 411 is positioned directly below the first substrate electrode 407 (from left to right), and on the second substrate electrode (e.g., other than the first substrate electrode). Figure 1 A planar deformation sensor 412 is positioned directly below the second substrate electrode 407 from the left.

[0186] In other words, a set of vertical deformation sensors 411 and planar deformation sensors 412 are disposed, for example, directly below a substrate electrode 407. This facilitates the positioning of the vertical deformation sensors 411 and planar deformation sensors 412 onto the substrate 403. Consequently, the manufacturing cost of the device 500 can be reduced.

[0187] Furthermore, vertical deformation sensors 411 and planar deformation sensors 412 are distributed and arranged directly below the plurality of substrate electrodes 407. This simplifies the arrangement of the vertical deformation sensors 411 and planar deformation sensors 412 relative to each substrate electrode 407. In other words, the vertical deformation sensors 411 and planar deformation sensors 412 can be positioned appropriately. Therefore, the detection accuracy of the deformation amount of the substrate electrodes 407 based on the vertical deformation sensors 411 and planar deformation sensors 412, respectively, can be improved.

[0188] also, Figure 8 The shown bonding surface S is the bonding surface between the electrode and the bump 408, viewed from above in the Z-axis direction before or immediately after the start of the ultrasonic bonding step. Furthermore, when the bump 408 is formed on the chip 405 before the chip 405 is bonded to the substrate 403, the aforementioned "electrode" refers to the substrate electrode 407. Additionally, when the bump 408 is formed on the substrate electrode 407 before the chip 405 is bonded to the substrate 403, the aforementioned "electrode" refers to the chip electrode 406.

[0189] Furthermore, Figure 8 The mating surface S′ shown represents the result of the ultrasonic bonding step, specifically the mating surface between the aforementioned “electrode” and the protrusion 408, ultimately obtained through the ultrasonic bonding step. The mating surface S′ is obtained by measuring the diameter of the top of the sheared protrusion in a bonded sample that achieves the desired shear strength during the bonding condition determination process. That is, the diameter of the mating surface S′ corresponds to the diameter of the top of the sheared protrusion in a bonded sample that achieves the desired shear strength during the bonding condition determination process. Furthermore, the mating surface S′ is the portion surrounded by the contour of the top of the sheared protrusion.

[0190] <Detection of Vertical Deformation Based on Vertical Deformation Sensor 411>

[0191] Next, the detection of vertical deformation based on the vertical deformation sensor 411 of the equipment manufacturing apparatus 401 will be explained.

[0192] Figure 8 The mating surface S shown first appears during the ultrasonic bonding step when the protrusion 408 contacts the aforementioned "electrode". Furthermore, it expands as the bonding between the "electrode" and the protrusion 408 progresses, eventually extending to the mating surface S′.

[0193] At this point, the vertical deformation generated at the joint surface S includes compressive deformation based on the installation load and repeated deformation of compression and expansion based on ultrasonic vibration. The compressive deformation based on the installation load is uniform within the region of the joint surface S. On the other hand, the repeated deformation of compression and expansion based on ultrasonic vibration... Figure 8 The center line Lc of the shown bonding surface S serves as the boundary, with compression and expansion reversed. Furthermore, the center line Lc is, for example, a line that roughly bisects (or includes bisects) the aforementioned "electrode" in the X-axis direction. Therefore, a structure in which the vertical deformation sensor 411 is embedded near the center O of the bonding surface S is more preferable. Specifically, a structure in which the vertical deformation sensor 411 is embedded in the substrate 403 is more preferable, such that the center portion of the vertical deformation sensor 411 is included in both an imaginary plane passing through the center O of the bonding surface S and parallel to the Y-axis, and an imaginary plane passing through the center O of the bonding surface S and parallel to the X-axis.

[0194] In other words, a vertical deformation sensor 411 is embedded near the center O of the joint surface S. This allows for the measurement of the vertical deformation generated at the joint surface S from the initial state of the ultrasonic bonding process, unaffected by the varying repetitive stresses distributed within the joint surface S.

[0195] Furthermore, the size of the vertical deformation sensor 411 (the area of ​​the orthographic projection of the vertical deformation sensor 411 onto the XY plane) can be larger or smaller than the area of ​​the mating surface S′. However, the vertical deformation sensor 411 outputs the average value of the vertical deformation generated within the sensor region (the region where deformation is detected). Therefore, it is preferable that the size of the vertical deformation sensor 411 is smaller than the mating surface S′ even when it ultimately becomes the mating surface S′. As a result, the average value of the vertical deformation can be obtained well, and thus the compressive deformation can be measured with high accuracy.

[0196] <Detection of Planar Deformation Based on Planar Deformation Sensor 412>

[0197] Next, the detection of planar deformation based on the planar deformation sensor 412 of the equipment manufacturing apparatus 401 will be explained.

[0198] Here, the force generated by the deformation of the plane at the joint surface S varies in the early stage, middle stage and later stage of the ultrasonic bonding process.

[0199] Specifically, the initial planar deformation in the ultrasonic bonding process is due to repeated compression and expansion caused by the frictional force generated at the interface of the bonding surface S by the installation load and ultrasonic vibration. In contrast, the planar deformation in the middle to later stages of the ultrasonic bonding process is due to repeated compression and expansion caused by ultrasonic vibration at the bonding location after the interface of the bonding surface S is bonded.

[0200] At this point, the degree of bonding at the interface S deviates within the interface S. Specifically, the bonding quality (e.g., stronger bonding) is improved on the side of vibration direction D or vibration direction D′ closer to the outer periphery of the interface S than on the center O of the interface S. This is because the frictional force generated by ultrasonic vibration at the interface S is strongest near the vicinity of the vibration direction D or vibration direction D′ side of the outer periphery of the interface S. Therefore, the closer the location is to the vibration direction D or vibration direction D′ side of the outer periphery of the interface S than on the center O of the interface S, the easier it is for a new surface to form. As a result, diffusion of metal atoms is easier to occur on the new surface, thus improving the bonding degree of the interface S.

[0201] Based on the above, it is even more preferable that the planar deformation sensor 412 is embedded in a position where the region of the outer periphery of the bonding surface S, on the vibration direction D side or vibration direction D′ side, is projected onto the substrate 403. Therefore, the planar deformation sensor 412 can detect changes in planar deformation based on the bonding over time with the highest sensitivity.

[0202] Furthermore, it is preferable that the direction of the planar deformation measured by the planar deformation sensor 412 is equal to the vibration direction D or vibration direction D′. Typically, the direction of the planar deformation also includes a direction parallel to a line segment at an angle of, for example, 0° to ±15° relative to the vibration direction D or vibration direction D′. Therefore, the direction of the planar deformation measured by the planar deformation sensor 412 is made equal to the vibration direction D or vibration direction D′. This allows the planar deformation sensor 412 to detect changes in planar deformation caused by the application of ultrasonic vibration with the highest sensitivity.

[0203] <Operation of Equipment Manufacturing Unit 401>

[0204] Next, the operation of the equipment manufacturing device 401 will be explained.

[0205] First, the drive control unit 416 controls the drive mechanism 400 and causes it to operate. As a result, the drive mechanism 400 moves (descends) in the negative Z-axis direction. Consequently, the chip 405 is pressed against the substrate 403 via the bumps 408. Furthermore, while pressed, ultrasonic vibration is applied in the planar direction (the direction parallel to the XY plane). This performs the ultrasonic bonding step between the substrate 403 and the chip 405.

[0206] At this time, the output information of the weighing sensor 410 configured in the joint 404 and the information representing the electrical waveform of the ultrasonic vibrator 409 configured in the joint 404 are recorded in the memory 414.

[0207] Furthermore, due to the force applied by the connector 404 to the bump 408, the vertical deformation sensor 411 and the planar deformation sensor 412, which are embedded directly below the substrate electrode 407 pressing against the bump 408, deform. The vertical deformation sensor 411 and the planar deformation sensor 412 continuously detect the amount of deformation generated by pressing in a time sequence, and input the deformation amount information representing the detected deformation amount to the measuring unit 413. At this time, the deformation amount information input to the measuring unit 413 is correlated with the time when the deformation amount is detected and recorded in the memory 414.

[0208] Next, the processing unit 415 infers the shape change of the bump 408 and the state of the interface between the bump 408 and the substrate electrode 407 based on the deformation information recorded in the memory 414. Furthermore, the inference method for inferring the shape change of the bump 408 and the state of the interface between the bump 408 and the substrate electrode 407 will be described later.

[0209] Next, the processing unit 415 determines whether the bonding between the chip 405 and the substrate 403 is qualified based on the inferred shape change of the bump 408 and the state of the interface between the bump 408 and the substrate electrode 407. Furthermore, the processing unit 415 inputs the determination result to the drive control unit 416. The determination method described above will be detailed later.

[0210] Furthermore, the judgment result may be used, for example, to determine the qualification or non-qualification of the produced products (the bonded chip 405 and the substrate 403).

[0211] <Equipment Manufacturing Unit 401>

[0212] Next, refer to Figure 10 The inference actions for the shape change of the protrusion 408 based on the vertical deformation sensor 411 and the inference actions for the state of the joint interface of the protrusion 408 based on the planar deformation sensor 412 are explained.

[0213] Figure 10 This diagram illustrates the ultrasonic bonding step in the equipment manufacturing apparatus 401. Figure 10 In the diagram, the horizontal axis represents time t, and the dashed lines extending vertically are used to show the relationship between data at the same moment.

[0214] Figure 10 The diagrams, starting from the top, depict the installation load P, the ultrasonic output US, the first deformation amount detected by the vertical deformation sensor 411 (i.e., vertical deformation εz), and the second deformation amount detected by the planar deformation sensor 412 (i.e., planar deformation εx).

[0215] In addition, vertical deformation εz and planar deformation εx are expansion deformations when they are greater than zero, and compression deformations when they are less than zero.

[0216] Furthermore, the installation load P and the ultrasonic output US are obtained during the ultrasonic bonding step by measuring the output value of the weighing sensor 410 and the power applied to the ultrasonic vibrator 409.

[0217] <Inference Method for Shape Change of Bump 408 Based on Vertical Deformation Sensor 411>

[0218] Next, the inference operation of the shape change of the protrusion 408 based on the vertical deformation sensor 411 will be explained. Furthermore, as described later, the vertical deformation εz varies according to the area of ​​the mating surface S.

[0219] Specifically, first, the connector 404 descends, and the bump 408 contacts the chip electrode 406 at time t1.

[0220] Then, from the moment t1 when the bump 408 contacts the substrate electrode 407, to the moment t2 when the ultrasonic vibration begins to be applied, the vertical deformation εz changes in the compression direction (negative direction) proportionally to the mounting load P, and the compressive deformation εz increases. Furthermore, due to the compressive force based on the mounting load P, the bump 408 breaks. Further, during this period, the mating surface S increases, and the compressive deformation εz further increases. Additionally, after moment t2, the mounting load P becomes a constant value.

[0221] Next, at time t2, the increase in the installation load P stops, and the application of ultrasonic vibration begins. As a result, the aforementioned compressive force is applied to the protrusion 408, and the shear force based on the applied ultrasonic vibration also acts. Therefore, the breakage deformation of the protrusion 408 is significant, and the mating surface S rapidly increases. Furthermore, after time t2, until a predetermined time has elapsed, the ultrasonic output US increases proportionally to the elapsed time, and after the predetermined time has elapsed, a certain output is applied.

[0222] Next, at time t3, the mating surface S extends beyond the area (hereinafter referred to as the "sensor area") that the vertical deformation sensor 411 can detect deformation. In other words, the mating surface S protrudes from the sensor area, or the area of ​​the mating surface S exceeds the area of ​​the sensor area. Furthermore, during the period from time t2 to time t3, the mating surface S converges into the sensor area of ​​the vertical deformation sensor 411. During this period, the compressive deformation εz increases.

[0223] On the other hand, after time t3, the mating surface S does not converge within the sensor region of the vertical deformation sensor 411. In other words, the mating surface S protrudes from the sensor region, or the area of ​​the mating surface S exceeds the area of ​​the sensor region. At this time, the compressive deformation εz decreases. The reason is that if the mating surface S extends beyond the sensor region of the vertical deformation sensor 411, the more the mating surface S increases from the moment it extends, the less the compressive force per unit area decreases.

[0224] Furthermore, if the size of the vertical deformation sensor 411 (in other words, the width of the sensor area) is small and the area of ​​the mating surface S before the ultrasonic vibration is applied is greater than the area of ​​the sensor area, the compressive deformation εz may change from increasing to decreasing before time t2.

[0225] On the other hand, if the sensor area of ​​the vertical deformation sensor 411 is larger than the final joint surface S′ and the joint surface S′ does not exceed the sensor area, the compressive deformation εz will not change from increasing to decreasing.

[0226] Next, at time t4, the breakage deformation of the protrusion 408 ends. In other words, after time t4, the mating surface S does not expand. Therefore, at time t4, the reduction of the compressive deformation εz stops, and thereafter, the vertical deformation εz is a constant value εz4. That is, in the case of embodiment 3, the period of reduction of the vertical deformation εz is from time t3 to time t4.

[0227] In addition, as mentioned above, in the pre-determined joint conditions operation, the relationship between the area of ​​the joint surface S′ of the joint sample that achieves the desired shear strength and a certain value ε′z4 of the vertical deformation when the joint surface S′ is obtained is determined in advance.

[0228] Therefore, based on the relationship obtained above and the fixed value εz4 of the vertical deformation εz, the processing unit 415 infers the area of ​​the joint surface S when the vertical deformation εz is a fixed value εz4 as follows.

[0229] Specifically, when the relationship that the mating surface S′ exceeds the sensor area of ​​the vertical deformation sensor 411 (or, “the area of ​​the mating surface S′” ≥ “the area of ​​the sensor area of ​​the vertical deformation sensor 411”) holds, the processing unit 415 first infers the area of ​​the mating surface S by using the following formula (5).

[0230] “Area of ​​joint surface S” = “Area of ​​joint surface S′ × (εz4 ÷ ε′z4)”···(5)

[0231] Furthermore, when the relationship that the mating surface S′ does not exceed the sensor area of ​​the vertical deformation sensor 411 (or “the area of ​​the mating surface S′” < “the area of ​​the sensor area of ​​the vertical deformation sensor 411”) holds, the processing unit 415 infers the area of ​​the mating surface S by the following equation (6).

[0232] “Area of ​​joint surface S” = “Area of ​​joint surface S′ × (ε′z4 ÷ εz4)”···(6)

[0233] Using the above method, the shape change of the bump 408 can be inferred by using the vertical deformation εz of the vertical deformation sensor 411.

[0234] <Inference of the state of the joint interface of the protrusion 408 based on the planar deformation sensor 412>

[0235] Next, the inference of the state of the engagement interface of the bump 408 based on the planar deformation sensor 412 will be explained. In addition, the planar deformation εx of the planar deformation sensor 412 varies depending on the degree of engagement between the bump 408 and the engagement surface S of the engagement electrode to which the bump 408 is pressed.

[0236] Specifically, in Figure 10At time t2, ultrasonic vibration is first applied. This generates friction at the interface S. Initially, during the initial application of the ultrasonic vibration, the protrusion 408 slides on the aforementioned joined electrodes. Therefore, static and dynamic friction based on ultrasonic vibration are repeatedly generated at the interface of the interface S. At this time, the amplitude Ax of the planar deformation εx is as follows... Figure 10 As shown, it changes in the same way as the ultrasonic output US.

[0237] Then, during repeated sliding on the electrodes in the aforementioned joint, plastic deformation occurs at the interface between the protrusion 408 and the aforementioned jointed electrodes. As a result, a new surface is exposed at the interface, and the joint surface S begins to be joined (initial joint).

[0238] In other words, at time t′3, the initial engagement begins, and the bump 408 begins to be fixedly mounted on the electrode of the engagement. Once the fixed mounting begins, the interface between the bonding head 404 and the chip 405 held at the bonding head 404 begins to slide. As a result, the ultrasonic vibration transmitted to the bump 408 attenuates. Furthermore, the amplitude Ax of the planar deformation εx decreases after time t′3.

[0239] Furthermore, after the initial engagement, the engagement of the joint surface S gradually increases. Therefore, the amplitude Ax of the planar deformation εx caused by ultrasonic vibration at the joint decreases as the engagement increases. And, at time t′4, a certain time elapsed since the application of ultrasonic vibration, the engagement of the joint surface S ends. Therefore, after time t′4, the magnitude of the ultrasonic vibration transmitted to the protrusion 408 is a constant value, and thus, the amplitude Ax of the planar deformation εx converges to a certain amplitude. This indicates that with the end of the engagement of the joint surface S, the amplitude Ax of the planar deformation εx no longer increases. Using the above method, based on the output waveform of the planar deformation sensor 412, the degree of engagement between the protrusion 408 and the joint surface S of the joint electrode pressed by the protrusion 408 can be inferred. That is, the state of the protrusion joint interface can be inferred.

[0240] <Joint State Determination Process>

[0241] Next, refer to Figure 11 The method for judging the quality of the engagement state in the inspection method of the equipment manufacturing device 401 is explained.

[0242] Figure 11 This is a flowchart illustrating the inspection method of the equipment manufacturing apparatus 401 in Embodiment 3 of this disclosure.

[0243] like Figure 11 As shown, first, the ultrasonic bonding described above is performed (step S11).

[0244] Next, after the ultrasonic bonding is completed, the processing unit 415 determines whether the output value of the load cell 410 and the power applied to the ultrasonic vibrator 409 are the same as the installation load preset on the equipment manufacturing apparatus 401 and the bonding conditions based on the ultrasonic output (step S12). At this time, if the output value of the load cell 410 and the power applied to the ultrasonic vibrator 409 are the same as the installation load preset on the equipment manufacturing apparatus 401 and the bonding conditions based on the ultrasonic output (yes in step S12), the processing unit 415 infers the area of ​​the bonding surface S (step S13). Specifically, in step S13, the processing unit 415 infers the area of ​​the finally obtained bonding surface S based on the vertical deformation εz of the vertical deformation sensor 411 through the ultrasonic bonding step.

[0245] Then, the processing unit 415 compares the inferred area of ​​the mating surface S (the inferred value of the mating surface S) with the area of ​​the mating surface S′ of the mating sample that achieved the desired shear strength in the pre-determined mating condition operation. Then, the processing unit 415 determines whether the inferred value of the mating surface S falls within the deviation range of the mating area (step S14). For example, in the case of the inferred value X mm of the mating surface S... 2 In this case, the deviation range of the joint area is X mm. 2 -Ymm 2 (Lower limit) to Xmm 2 +Ymm 2 The range of (upper limit value). Additionally, Ymm 2 For example, Xmm 2 Approximately 15%.

[0246] Furthermore, if the inferred value of the joint surface S falls within the deviation range of the aforementioned joint area (as in step S14), the processing unit 415 confirms whether the output waveform of the planar deformation sensor 412 eventually converges to a certain amplitude (step S15). Specifically, in step S5, the processing unit 415 confirms whether the amplitude Ax of the planar deformation εx decreases over time during the ultrasonic bonding step in the output waveform of the planar deformation sensor 412, and whether it eventually converges to a certain amplitude.

[0247] At this point, when the amplitude Ax of the planar deformation εx converges to a certain amplitude (as in step S15), the processing unit 415 determines that the bonding in the ultrasonic bonding step is good (step S16). Then, the processing unit 415 inputs the determined result to the drive control unit 416.

[0248] On the other hand, in step S12 above, if the output value of the weighing sensor 410 and the power value applied to the ultrasonic vibrator 409 are not the same as the preset engagement conditions (No in step S12), the equipment is considered to be malfunctioning. In this case, the processing unit 415 determines that the engagement in the ultrasonic engagement step is unqualified (step S17). Furthermore, the processing unit 415 inputs the determined result to the drive control unit 416.

[0249] Furthermore, in step S14 above, if the estimated value of the area of ​​the bonding surface S deviates from the deviation range of the bonding area (No in step S14), the chip 405 may be bonded at an angle due to contaminants, causing cracks to form in the chip 405, substrate 403, etc. Additionally, the aforementioned contaminants may be, for example, contaminants from fine conductors.

[0250] In this case, the processing unit 415 determines that the bonding in the ultrasonic bonding step is unqualified (step S17). Furthermore, the processing unit 415 inputs the determined result to the drive control unit 416.

[0251] Furthermore, if the amplitude Ax of the planar deformation εx does not converge in step S15 (no in step S15), the component is defective, possibly due to contaminants, and the joint is not performed. Additionally, if the amplitude Ax of the planar deformation εx initially converges but then increases, fatigue failure may occur at the joint.

[0252] In this case, the processing unit 415 determines that the bonding in the ultrasonic bonding step is unqualified (step S17). Furthermore, the processing unit 415 inputs the determined result to the drive control unit 416.

[0253] Furthermore, based on the determination result of the above-mentioned bonding state, the drive control unit 416 assigns the products (the bonded chip 405 and the substrate 403) as qualified or unqualified and transports them.

[0254] Furthermore, the processing order of steps S12 to S15 is not mandatory. Figure 11 The order shown. Therefore, for example, by maintaining the processing order of steps S13 and S14, and performing the processing in the order of steps S12 and S15 after the processing of step S14, it is also possible to determine the engagement state.

[0255] As explained above, Embodiment 3 is an inspection method of a device manufacturing apparatus comprising a chip ultrasonically bonded via bumps and a substrate opposite the chip. The apparatus includes a first deformation detection unit disposed on the substrate for detecting a first deformation amount in a direction opposite to the chip and the substrate, and a second deformation detection unit for detecting a second deformation amount in the direction of ultrasonic vibration applied by an ultrasonic vibrator. The inspection method includes a step of measuring the first deformation amount and the second deformation amount when the chip and the substrate, on which the first and second deformation detection units are disposed, are ultrasonically bonded. Further, it includes a step of inferring the shape change of the bumps based on the first deformation amount; and a step of inferring the state of the bonding interface between the electrodes disposed on the chip or substrate and the bumps based on the second deformation amount. Finally, it includes a step of determining whether the bonding state between the chip and the substrate is acceptable based on the inferred shape change of the bumps and the state of the bonding interface.

[0256] Furthermore, Embodiment 3 is a device manufacturing apparatus comprising a chip ultrasonically bonded via bumps and a substrate opposing the chip. The apparatus includes a first deformation detection unit disposed on the substrate for detecting a first deformation amount in the opposing direction of the chip and the substrate, and a second deformation detection unit for detecting a second deformation amount in the direction of ultrasonic vibration applied by an ultrasonic vibrator. The apparatus also includes a measuring unit that measures the first deformation amount and the second deformation amount when the chip and the substrate, on which the first and second deformation detection units are disposed, are ultrasonically bonded. Further, the apparatus includes a processing unit that, based on the first deformation amount, infers the shape change of the bumps; based on the second deformation amount, infers the state of the bonding interface between the electrodes disposed on the chip or substrate and the bumps; and based on the inferred shape change of the bumps and the state of the bonding interface, determines whether the bonding state between the chip and the substrate is acceptable.

[0257] With the above structure, if ultrasonic bonding is performed, it is possible to simultaneously infer the inferred value (bump shape change) based on the first deformation amount detected by the first deformation detection unit and the inferred value (degree of bonding between the bump and the electrode bonding surface S) based on the second deformation amount detected by the second deformation detection unit. In other words, by using the inferred value, it is possible to non-destructively determine whether the bonding state of the electrode and bump disposed on the chip or substrate is acceptable. Therefore, bonding quality can be non-destructively determined without relying on statistical assurance based on an increase in n from destructive testing. As a result, it is possible to prevent the outflow of bonding defects caused by component defects or equipment malfunctions. Consequently, the cost required for defective inspection can be significantly reduced. Furthermore, it is also possible to significantly reduce the costs associated with the recycling of defective products that have leaked into the market, thus maintaining the product brand.

[0258] (Implementation Method 4)

[0259] The following is a detailed description of the equipment manufacturing apparatus 401 in Embodiment 4 of this disclosure.

[0260] Figure 12 This is a perspective view of the substrate electrode 507 in the inspection method of the device manufacturing apparatus 401 according to Embodiment 4 of this disclosure. Figure 12 In China, targeting and Figure 8 Structural elements that are identical in the diagram use the same symbols, and descriptions are omitted.

[0261] like Figure 12 As shown, in the device manufacturing apparatus 401 of Embodiment 4, substrate electrode 507 is used instead of substrate electrode 407.

[0262] Furthermore, in the device manufacturing apparatus 401 of Embodiment 4, the vertical deformation sensor 411 is replaced by a semiconductor 511 constituting a first deformation detection unit comprising n-type Si. Further, in the device manufacturing apparatus 401 of Embodiment 4, the planar deformation sensor 412 is replaced by a semiconductor 512 constituting a second deformation detection unit comprising p-type Si.

[0263] Furthermore, semiconductors 511 and 512, like vertical deformation sensor 411 and planar deformation sensor 412, are, for example, embedded directly below substrate electrode 507. This achieves the same effect as when vertical deformation sensor 411 and planar deformation sensor 412 are embedded directly below substrate electrode 507.

[0264] <Explanation of the crystal orientation of semiconductor 511 and semiconductor 512>

[0265] Next, the crystal orientation of semiconductor 511 and semiconductor 512 will be explained.

[0266] As described above, if mechanical deformation is applied to n-type Si and p-type Si, then n-type Si and p-type Si will exhibit piezoresistive effects with varying resistivity.

[0267] In other words, when mechanical deformation is applied to n-type Si and p-type Si, the rate of change of resistivity ΔR / R0 along the x-axis at a certain crystal orientation is the sum of the values ​​obtained by multiplying the deformation applied in the xyz directions by the inherent strain coefficients of each axis. R0 is the initial resistivity of n-type Si or p-type Si without deformation. On the other hand, ΔR is the change in resistivity from the initial resistivity when deformation is applied.

[0268] Furthermore, the strain coefficient varies by setting each of the xyz axes to a specific crystal orientation. Therefore, the semiconductor 511 is constructed of n-type Si with a crystal orientation of

[001] in the direction of the applied load and a crystal orientation of

[110] or [11(-)0] in the vibration direction D. In this case, the device manufacturing apparatus 401 of Embodiment 4 preferably has a structure including electrical wiring 418 for measuring the resistance value with a crystal orientation of

[110] or [11(-)0]. Additionally, the values ​​in brackets [] are Miller indices used to describe the crystal planes and orientations in the crystal lattice. With this structure, the strain coefficient of the semiconductor 511 is maximized in the direction of the applied load. Furthermore, the principal component of the measured resistance value change ΔR depends on the compressive deformation (vertical deformation εz).

[0269] Furthermore, the semiconductor 512 is composed of p-type Si with a crystal orientation of

[001] in the direction of application of the mounting load and a crystal orientation of

[110] or [11(-)0] in the vibration direction D. In this case, the device manufacturing apparatus 401 of Embodiment 4 preferably has a structure that includes electrical wiring 418 for measuring the resistance value with a crystal orientation of

[110] or [11(-)0]. With this structure, the strain coefficient of the semiconductor 512 is maximized for planar deformation in the vibration direction D. Furthermore, the principal component of the measured resistance value change ΔR depends on the planar deformation εx in the vibration direction D.

[0270] Furthermore, in the ultrasonic mounting step, the change in resistance of semiconductor 511 tends to be approximately the same as (including the same tendency) as the change in compression deformation (vertical deformation gz). Therefore, in the above formula (5) or formula (6), instead of a fixed value εz4 for vertical deformation εz, the resistance change rate ΔR / R0 when the resistance value is fixed is used; furthermore, instead of a fixed value ε′z4 for vertical deformation εz, the resistance change amount ΔR′ / R′0 when the joint surface S′ is obtained is used. Thus, the processing unit 415 can deduce the joint surface S in the above ultrasonic mounting step.

[0271] Furthermore, during the ultrasonic installation process, the change in the resistance value of the semiconductor 512 tends to have a similar tendency (including the same tendency) to the change in the planar deformation εx in the vibration direction. Therefore, the processing unit 415 can determine the degree of bonding of the bonding surfaces S based on the change in the amplitude Ax of the resistance value of the semiconductor 512.

[0272] In other words, by using the device manufacturing apparatus 401 and the inspection method of the device manufacturing apparatus 401 in Embodiment 4, it is possible to non-destructively inspect whether the bonding state in the ultrasonic installation step is qualified, just as in Embodiment 3.

[0273] Furthermore, in the device manufacturing apparatus 401 and the inspection method of the device manufacturing apparatus 401 according to Embodiment 4, semiconductors 511 and 512 are used as sensors. Therefore, for example, compared to the case of using a general strain gauge as shown in non-patent literature (“Wiring Method for Strain Gauges” https: / / www.kyowa-ei.com / jpn / technical / strain_gages / wiring.html; retrieved April 6, 2006), the number of electrical wiring 418 can be reduced to less than half. Furthermore, no circuit for deformation conversion is needed, thus simplifying the measuring unit 413.

Claims

1. A method for manufacturing a device, the device comprising a chip ultrasonically bonded via bumps and a substrate opposite the chip. The method for manufacturing the equipment includes: A step of measuring the change in resistance value of each of the multiple sensors when a substrate with multiple sensors embedded directly below the electrode where the bump is pressed is mounted on the bump of the chip. The step of inferring the engagement surface of the bump with the electrode based on the change in resistance value; and The step of determining whether the bonding state between the chip and the substrate is qualified based on the inferred bonding surface. The method for manufacturing the equipment further includes: The step of inferring the overlap area between the engagement surface of the bump and the electrode and the sensor based on the change in resistance value; The step of inferring the contour of the mating surface based on the overlapping area; The step of determining the center of the mating surface based on its contour; and The step of calculating the positional offset between the center of the bonding surface and the center of the electrode.

2. The method for manufacturing the equipment according to claim 1, wherein, The sensor is a rectangular piezoresistive sensor.

3. The method for manufacturing the equipment according to claim 1, wherein, The sensor comprises multiple piezoresistive sensors that are separated from each other and arranged in a straight line.

4. An equipment manufacturing apparatus, comprising: The worktable holds the substrate that is bonded to the chip via bumps; The bonding head presses the chip against the substrate and applies ultrasonic vibrations to the chip; The measuring unit, which has a substrate with multiple sensors arranged thereon embedded directly below the electrode where the bump is pressed, measures the change in resistance value of each of the multiple sensors when the bump is mounted on the chip; and The processing unit, based on the change in resistance value, infers the state of the mating surface between the bump and the electrode. Based on the change in resistance value, the processing unit infers the overlap area between the contact surface of the bump and the electrode and the sensor, infers the contour of the contact surface based on the overlap area, determines the center of the contact surface based on the contour, and calculates the positional offset between the center of the contact surface and the center of the electrode.

5. The equipment manufacturing apparatus according to claim 4, wherein, The sensor is a rectangular piezoresistive sensor.

6. The equipment manufacturing apparatus according to claim 4, wherein, The sensor comprises multiple piezoresistive sensors that are separated from each other and arranged in a straight line.

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