Semiconductor manufacturing apparatus and method of operating the same

Abstract

A semiconductor manufacturing apparatus and an operating method thereof are disclosed. The semiconductor manufacturing apparatus includes an oscillation unit and an extreme ultraviolet generation unit, the oscillation unit including a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates first pulses, and wherein the second seed laser oscillates second pulses, and the extreme ultraviolet generation unit is configured to generate extreme ultraviolet light using the first pulses and the second pulses. The seed module includes a plurality of mirrors configured to cause the first pulses and the second pulses to travel along a first path and a second path, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path without overlapping the first path. The third optical element includes a lens between the first optical element and the second optical element.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2020-0069511, filed with the Korean Intellectual Property Office on June 9, 2020, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present invention relates to a semiconductor manufacturing apparatus and its operating method, and more specifically, to an extreme ultraviolet light source and its operating method. Background Technology

[0004] Photolithography using extreme ultraviolet (EUV) light sources is anticipated for the microfabrication of next-generation semiconductors. Photolithography is a technique in which a reduced beam of light projected onto a silicon substrate is passed through a mask onto which circuit patterns are drawn to form electronic circuits on the silicon substrate. Extreme ultraviolet light refers to light with wavelengths ranging from approximately 1 nm to approximately 100 nm. Since the minimum fabrication size of circuits formed by photolithography is essentially dependent on the wavelength of the light source, reducing the wavelength of the light source is essential for the development of next-generation semiconductors, thus prompting active research into the development of EUV light sources. Summary of the Invention

[0005] Some exemplary embodiments of the present invention provide a semiconductor manufacturing apparatus and a method of operation thereof, which have improved stability and increased productivity.

[0006] The purpose of this invention is not limited to the foregoing, and those skilled in the art will understand other purposes not mentioned above based on the following description.

[0007] According to some exemplary embodiments of the present invention, a semiconductor manufacturing apparatus may include an oscillation unit and an extreme ultraviolet (EUV) generation unit. The oscillation unit includes a first seed laser, a second seed laser, and a seed module. The first seed laser is configured to oscillate a first pulse, and the second seed laser is configured to oscillate a second pulse. The EUV generation unit is configured to generate EUV light using the first and second pulses. The seed module may include a plurality of mirrors and a pulse control optical system. The mirrors are configured to cause the first and second pulses to travel along a first path and a second path, respectively. The pulse control optical system includes a first optical element, a second optical element, and a third optical element. The pulse control optical system may be disposed on a second path that does not overlap with the first path. The third optical element may include a lens between the first and second optical elements.

[0008] According to some exemplary embodiments of the present invention, a semiconductor manufacturing apparatus may include: an oscillation unit, an extreme ultraviolet (EUV) generation unit, an amplification unit, a transmission unit, and an exposure unit. The oscillation unit includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser is configured to oscillate a first pulse, and wherein the second seed laser is configured to oscillate a second pulse. The EUV generation unit includes a target generator and a focusing lens, wherein the EUV generation unit is configured to generate EUV light by colliding the first pulse and the second pulse with corresponding targets generated from the target generator. An amplification unit is located between the oscillation unit and the EUV generation unit, wherein the amplification unit includes a plurality of amplifiers. The transmission unit is configured to carry the first pulse and the second pulse from the amplification unit to the EUV generation unit, and the exposure unit is configured to provide the EUV light generated from the EUV generation unit to a wafer. The seed module may include: multiple mirrors, a pulse control optical system, and at least one camera. The multiple mirrors are configured to cause a first pulse and a second pulse to travel along a first path and a second path, respectively. The pulse control optical system includes a first optical element, a second optical element, and a third optical element, and the at least one camera is configured to monitor either the first pulse or the second pulse. The pulse control optical system may be positioned on a second path that does not overlap with the first path. The third optical element may include a lens between the first optical element and the second optical element.

[0009] According to some exemplary embodiments of the present invention, a method of operating a semiconductor manufacturing apparatus may include: oscillating a first pulse and a second pulse via an oscillation unit, the oscillation unit including a first seed laser, a second seed laser, and a seed module; controlling the second pulse in the seed module along the path of the second pulse, wherein the path of the second pulse does not overlap with the path of the first pulse; amplifying the first pulse and the second pulse via multiple amplifiers; and colliding the first pulse and the second pulse with corresponding targets to generate extreme ultraviolet light. The step of controlling the second pulse may be performed in a pulse control optical system including lenses. Attached Figure Description

[0010] Figure 1 A conceptual block diagram illustrating a semiconductor manufacturing apparatus and its operation method, based on some exemplary embodiments of the present invention, is shown.

[0011] Figure 2 Enlarged schematic diagrams of extreme ultraviolet (EUV) generation and exposure units of a semiconductor manufacturing apparatus, based on some exemplary embodiments of the present invention, are shown.

[0012] Figures 3 to 5 The illustration shows a conceptual schematic diagram of the path of a pulse in an oscillation unit of a semiconductor manufacturing apparatus, based on some example embodiments of the invention.

[0013] Figures 6 to 9 Some example embodiments of the present invention are shown respectively. Figures 3 to 5 The conceptual schematic diagram corresponding to section A partially illustrates the oscillation unit of a semiconductor manufacturing apparatus. Detailed Implementation

[0014] A semiconductor manufacturing apparatus and its operation method according to some exemplary embodiments of the present invention will now be described below in conjunction with the accompanying drawings.

[0015] Figure 1 A conceptual block diagram illustrating a semiconductor manufacturing apparatus and its operation method, based on some exemplary embodiments of the present invention, is shown.

[0016] Reference Figure 1 The semiconductor manufacturing apparatus according to the present invention may be an extreme ultraviolet (EUV) light source 1 or may include an EUV light source 1. The EUV light source 1 may include an oscillation unit or oscillation system 10, an amplification unit or amplification system 20, a transmission unit or transmission system 30, an EUV generation unit or EUV generation system 40, and an exposure unit or exposure system 50. The EUV light source 1 according to the present invention may be, for example, a laser-generated plasma (LPP) light source.

[0017] The oscillation unit 10 may include a first seed laser S1 that oscillates a first pulse PP, a second seed laser S2 that oscillates a second pulse MP, and a seed module SM. The seed module SM may be disposed between the amplification unit 20 and the first seed laser S1 and the second seed laser S2. For example, each of the first seed laser S1 and the second seed laser S2 may be an excimer laser, a solid-state laser, or a CO2 laser. The first pulse PP may be a prepulse, and the second pulse MP may be the main pulse. The first pulse PP and the second pulse MP may have different wavelengths from each other. For example, the first pulse PP may have a shorter wavelength than the second pulse MP, and may also have a higher resolution than the second pulse MP.

[0018] The seed module SM can include multiple mirrors (see See Figures 3 to 5 11) Pulse-controlled optical system (see 11) Figures 3 to 5 A) and one or more cameras (see A) Figures 3 to 5 (C1 and C2 in the reference). Figures 3 to 5 The detailed configuration of the oscillation unit 10 will be described below. The oscillation unit 10 includes a seed module SM, a first seed laser S1, and a second seed laser S2.

[0019] The first pulse PP and the second pulse MP, oscillated by the first seed laser S1 and the second seed laser S2 of the oscillation unit 10 respectively, can be transmitted through the amplification unit 20 and the transmission unit 30. For example, the first pulse PP and the second pulse MP output from the oscillation unit 10 can travel along substantially the same path or travel parallel to each other with a offset relative to each other. In other words, the pulses PP and MP output from the oscillation unit 10 can travel along substantially the same path, or they can be parallel and spaced apart from each other.

[0020] Amplification unit 20 may be disposed between oscillation unit 10 and extreme ultraviolet generation unit 40. Amplification unit 20 may include at least one amplifier, such as a power amplifier. For example, amplification unit 20 may include a first amplifier 21, a second amplifier 22, a third amplifier 23, and a fourth amplifier 24, but there is no limitation on the number of power amplifiers. The first amplifier 21 to the fourth amplifier 24 arranged sequentially may be referred to as a high-power amplifier chain (HPAC). Unlike what is shown, amplification unit 20 may also include a preamplifier between the first amplifier 21 and the seed module SM of oscillation unit 10. Oscillation unit 10, which oscillates the first pulse PP and the second pulse MP, and amplification unit 20, which amplifies the first pulse PP and the second pulse MP, may be referred to as master oscillator power amplifier (MOPA).

[0021] The transmission unit 30 can be disposed between the amplification unit 20 and the extreme ultraviolet (EUV) generating unit 40. The transmission unit 30 can guide the first pulse PP and the second pulse MP from the amplification unit 20 to the EUV generating unit 40, and can simultaneously control the first pulse PP and the second pulse MP. For example, the transmission unit 30 can be configured to use multiple reflectors 31 to control the position and / or angle of the first pulse PP and the second pulse MP. The EUV generating unit 40 can receive the first pulse PP and the second pulse MP that have passed through the transmission unit 30.

[0022] A pulse controller 35 can be disposed between the transmission unit 30 and the extreme ultraviolet (EUV) generating unit 40. The pulse controller 35 can control the first pulse PP. When the first pulse PP and the second pulse MP travel toward the EUV generating unit 40, the pulse controller 35 can create a bias angle between the first pulse PP and the second pulse MP, which propagate along substantially the same path at the amplification unit 20 and the transmission unit 30 (see...). Figure 2 (BA in the middle).

[0023] The extreme ultraviolet (EUV) generation unit 40 can be configured such that the first pulse PP and the second pulse MP, which have passed through the transmission unit 30, are used to generate extreme ultraviolet (EUV) light. The EUV light can be light with a wavelength in the range of about 1 nm to about 100 nm (e.g., about 13.5 nm). The exposure unit 50 can receive the EUV light generated from the EUV generation unit 40. The exposure unit 50 can be configured such that the wafer W receives reduced EUV light projected onto it. Reference will be made below. Figure 2 The extreme ultraviolet generation unit 40 and the exposure unit 50 are described in further detail.

[0024] Figure 2 Enlarged schematic diagrams of extreme ultraviolet (EUV) generation and exposure units of a semiconductor manufacturing apparatus, based on some exemplary embodiments of the present invention, are shown.

[0025] Reference Figure 2 The extreme ultraviolet (EUV) generating unit 40 may include a target generator (DG), a target collector (DC), a focusing mirror (FM), and a housing (VS) surrounding the target generator (DG), the target collector (DC), and the focusing mirror (FM). The housing (VS) may be a sealed vacuum chamber.

[0026] The target generator (DG) can periodically generate targets. Targets can include materials that emit extreme ultraviolet (EUV) light when converted to plasma (PG). For example, targets can include tin (Sn), lithium (Li), or xenon (Xe). When using tin (Sn), targets can include pure tin (Sn), tin compounds (e.g., SnBr4, SnBr2, or SnH4), and tin alloys (e.g., tin-gallium alloy, tin-indium alloy, or tin-indium-gallium alloy). Targets can be shaped, for example, into droplets, streams, or clusters.

[0027] The first pulse PP and the second pulse MP can be applied to a target migrating from the target generator DG to the target collector DC. (Pulse controller - see...) Figure 1 35) can make the first pulse PP and the second pulse MP form a bias angle BA, and can make the first pulse PP and the second pulse MP illuminate different targets.

[0028] A first pulse PP can be applied to a first target D1, thus altering its shape. The width and cross-sectional area of ​​a second target D2 can be greater than those of the first target D1. For example, the first target D1 can have a width equal to or less than approximately 40 μm, and the second target D2 can have a width equal to or greater than approximately 40 μm. Subsequently, a second pulse MP can be applied to the second target D2, thereby generating plasma PG. Extreme ultraviolet (EUV) light can then be emitted from the second target D2, which has been converted into plasma PG.

[0029] Although extreme ultraviolet (EUV) light is emitted from the plasma PG in all directions, the focusing lens FM forces the EUV light to be concentrated at the central focal point IF. The EUV light is then reflected from multiple mirrors 51 disposed in the exposure unit 50 and projected onto the wafer W. The wafer W can be disposed on the wafer support 70.

[0030] Figures 3 to 5 The illustration shows a conceptual schematic diagram of the path of a pulse in an oscillation unit of a semiconductor manufacturing apparatus, based on some example embodiments of the invention. Figure 3 The path of the first pulse in the oscillation unit is shown, and Figure 4 and Figure 5 The path of the second pulse in the oscillation unit is shown.

[0031] Reference Figure 3 , Figure 4 and Figure 5 The seed module SM of the oscillation unit 10 may include multiple mirrors 11, a pulse control optical system A, and a first camera C1 and a second camera C2. The multiple mirrors 11 are configured to cause a first pulse PP and a second pulse MP to travel along a first path P1 and a second path P2. The pulse control optical system A is disposed on a portion of the second path P2, and the first camera C1 and the second camera C2 monitor the first pulse PP or the second pulse MP. Although not shown, multiple optical devices may be disposed between the seed module SM and the first seed laser S1 and the second seed laser S2. The optical devices may be, for example, optical couplers, acousto-optic modulators (AOMs), or electro-optic modulators (EOMs).

[0032] Each of the plurality of reflectors 11 may be one of a plane mirror, a dichroic mirror, and a beam splitter, each of which is configured to have an angle of incidence (AOI) of approximately 45°. However, the inventive concept is not limited thereto, and the plurality of reflectors 11 may have various shapes at different locations.

[0033] A portion of a first pulse PP traveling along a first path P1 can be reflected from one of the plurality of reflectors 11 and then input to a first camera C1. A portion of a second pulse MP traveling along a second path P2 can be reflected from one of the plurality of reflectors 11 and then input to either the first camera C1 or the second camera C2. The first camera C1 and the second camera C2 can monitor the position and / or angle of the first pulse PP or the second pulse MP. For example, the first camera C1 and the second camera C2 can monitor to determine whether the first pulse PP and the second pulse MP travel along substantially the same path or whether one of the first pulse PP and the second pulse MP travels along a path deviating from the path of the other pulse in the first pulse PP and the second pulse MP.

[0034] Reference Figure 3 The first pulse PP can be oscillated by the first seed laser S1. The first pulse PP can travel along the first path P1 in the seed module SM. The first path P1 can be determined by a plurality of mirrors 11 in the seed module SM. The first path P1 can bypass the pulse control optical system A, which includes the first optical element 100 and the second optical element 200.

[0035] Reference Figure 4 and Figure 5 The second pulse MP can be oscillated by the second seed laser S2. The second pulse MP can travel along the second path P2 in the seed module SM. The second path P2 can be determined by multiple mirrors 11 in the seed module SM.

[0036] The second path P2 may include a first sub-path P21 extending from the second seed laser S2 to the pulse control optical system A, a second sub-path P22 in the pulse control optical system A, and a third sub-path P23 extending from the pulse control optical system A until the second pulse MP is output from the seed module SM.

[0037] At least a portion of the first sub-path P21 and the third sub-path P23 may overlap with the first path P1 of the first pulse PP. The first sub-path P21 and the third sub-path P23 may be common paths along which the first pulse PP and the second pulse MP travel. Conversely, the second sub-path P22 may not overlap with the first path P1. The first pulse PP may not travel along the second sub-path P22. Therefore, there may be no interference between the first pulse PP and the second pulse MP on the second sub-path P22.

[0038] Only the second pulse MP can be selectively controlled by the pulse control optical system A disposed on the second sub-path P22. When the pulse control optical system A selectively controls the second pulse MP, the phenomenon that one pulse travels along a path deviating from the path of another pulse can be corrected. When the first pulse PP and the second pulse MP are output from the seed module SM, the aforementioned pulse correction can make the first pulse PP and the second pulse MP travel along substantially the same path or travel in parallel with each other if they are offset from each other, and the first pulse PP and the second pulse MP can have improved stability in the amplification unit 20 and the transmission unit 30. Since the first pulse PP and the second pulse MP have improved stability, the first pulse PP and the second pulse MP can be accurately or more precisely irradiated onto the target in the extreme ultraviolet generation unit 40, and thus the semiconductor manufacturing apparatus according to the present invention can have improved productivity.

[0039] refer to Figures 6 to 9 The following will describe Figures 3 to 5 The detailed configuration of the pulse control optical system A shown is illustrated.

[0040] Figure 6 A schematic diagram illustrating a pulse-controlled optical system in an oscillation unit of a semiconductor manufacturing apparatus, based on some example embodiments of the invention, is shown.

[0041] Reference Figure 6 The pulse-controlled optical system A may include a first optical element 100, a second optical element 200, and a third optical element 300. The first optical element 100, the second optical element 200, and the third optical element 300 may be configured such that a second pulse MP, having a second sub-path P22 and interpreted as an input pulse IP and an output pulse OP, propagates along the second sub-path P22. The first optical element 100, the second optical element 200, and the third optical element 300 may (e.g., in the Z-axis direction) vertically overlap.

[0042] An input pulse IP can be reflected from the first optical element 100 and then converted into an output pulse OP. The first optical element 100 may have a first central axis MCA. The first optical element 100 may be a plane mirror, but the inventive concept is not limited thereto, and the top surface 100a of the first optical element 100 may have various shapes. For example, the first optical element 100 may include an actuator that can drive the first optical element 100 to move vertically (e.g., in the Z-axis direction).

[0043] The second optical element 200 can be the same as the reference. Figures 3 to 5 One of the multiple mirrors 11 in the seed module SM described is substantially the same mirror. A second optical element 200 enables the first optical element 100 to receive an input pulse IP input to the pulse-controlled optical system A. The second optical element 200 enables the pulse-controlled optical system A to output an output pulse OP reflected from the first optical element 100.

[0044] The third optical element 300 may include a lens 310 disposed between the first optical element 100 and the second optical element 200, and may also include an actuator 330 for driving the lens 310.

[0045] A lens 310 can be positioned between the first optical element 100 and the second optical element 200 along the propagation path of the input pulse IP and the output pulse OP. The lens 310 can have a focal length FL, for example, from tens of millimeters (mm) to hundreds of millimeters (mm). The focal length FL of the lens 310 can be substantially the same as the distance between the lens 310 and the first optical element 100 in the Z-axis direction. The lens 310 can have a second central axis LCA. The second central axis LCA of the lens 310 can be spaced apart from the first central axis MCA of the first optical element 100.

[0046] The actuator 330 may contact at least a portion of the lens 310. The actuator 330 may control the position of the lens 310 relative to the first optical element 100. For example, the actuator 330 may drive the lens 310 to move in any of the positive and negative X-axis directions, positive and negative Y-axis directions, and positive and negative Z-axis directions. The actuator 330 may be or include a piezoelectric device or a stepper motor, but the inventive concept is not limited thereto.

[0047] As shown in the figure, actuator 330 can drive the second central axis LCA of lens 310 to move relative to the first central axis MCA of the first optical element 100 in the negative Y-axis direction. Actuator 330 can cause a first displacement AS between the first central axis MCA and the second central axis LCA. The range of the first displacement AS can be, for example, from about tens of micrometers (μm) to about a few millimeters (mm). However, this is only exemplary, and actuator 330 can drive the second central axis LCA of lens 310 to move by different amounts or to different positions as needed.

[0048] Movement of the lens 310, driven by actuator 330, can cause a second shift BS between the input pulse IP and the output pulse OP. The degree of the second shift BS can be the amount by which the output pulse OP is offset relative to the input pulse IP. For example, at the beginning and end of the second sub-path P22, the second shift BS can be defined as the distance in the Z-axis direction between the central axis of the input pulse IP and the central axis of the output pulse OP. The range of the second shift BS can be, for example, from about tens of micrometers (μm) to about a few millimeters (mm). More narrowly, the range of the second shift BS can be from about 10 μm to about 90 μm. In the oscillation unit 10, the second shift BS can control the second sub-path P22 of the second pulse MP. The seed module SM can output the output pulse OP of the second pulse MP with the second shift BS, as well as the first pulse PP.

[0049] Figure 7 The illustration shows a conceptual schematic diagram of a pulse control optical system in an oscillation unit of a semiconductor manufacturing apparatus, based on some exemplary embodiments of the concept according to the present invention. For ease of description and to avoid repetition of descriptions and references, details may be omitted. Figure 6The components described are the same or substantially the same.

[0050] Reference Figure 7 The first optical element 100 may include a rotator 110. The rotator 110 may be located at the central portion of the first optical element 100. For example, the rotator 110 may drive the first optical element 100 to rotate at an angle clockwise (or counterclockwise) relative to a plane formed by the Y-axis and Z-axis directions. When the first optical element 100 rotates, its first central axis MCA may also rotate at the same angle. As shown, when the first optical element 100 rotates at a tilt angle TA, the first central axis MCA may rotate relative to the second central axis LCA of the lens 310 at a tilt angle TA. The tilt angle TA may have a range of, for example, from about 0.1° to about 1°. However, this is merely exemplary, and the rotator 110 may drive the first optical element 100 to rotate at any angle as needed in the clockwise (or counterclockwise) directions on the respective planes. In summary, the second central axis LCA of the lens 310 can have an angle or slope relative to the first central axis MCA of the first optical element 100.

[0051] Rotation of the first optical element 100 can cause a second shift BS between the input pulse IP and the output pulse OP. The occurrence of the second shift BS caused by the rotation of the first optical element 100 due to the adjustment of the tilt angle TA can be substantially the same as the occurrence of the second shift BS caused by the movement of the lens 310. For example, the second subpath P22 of the second pulse MP can be controlled by rotating the first optical element 100 using the rotator 110 and simultaneously moving the lens 310 using the actuator 330.

[0052] Figure 8 The illustration shows a conceptual schematic diagram of a pulse control optical system in an oscillation unit of a semiconductor manufacturing apparatus, based on some exemplary embodiments of the concept according to the present invention. For ease of description and to avoid repetition of descriptions and references, details may be omitted. Figure 6 or Figure 7 The components described are the same or substantially the same.

[0053] Reference Figure 8 The third optical element 300 may include a refractive device 350 between the lens 310 and the second optical element 200. For example, the refractive device 350 may include an actuator that drives the refractive device 350 to move left and right (e.g., in the Y-axis direction). Unlike what is shown, the third optical element 300 may include a plurality of refractive devices 350.

[0054] The refractive device 350 may have a top surface 350a and a bottom surface 350b that are not parallel to each other. The top surface 350a and the bottom surface 350b of the refractive device 350 may face the second optical element 200 and the lens 310, respectively. For example, the top surface 350a of the refractive device 350 may have an angle or slope relative to the top surface 100a of the first optical element 100, and the bottom surface 350b of the refractive device 350 may be parallel to the top surface 100a of the first optical element 100. However, this is merely exemplary. For example, the top surface 100a of the first optical element 100 may be arranged in the opposite manner to the top surface 350a and the bottom surface 350b of the refractive device 350, and one or both of the top surface 350a and the bottom surface 350b of the refractive device 350 may have an angle or slope relative to the top surface 100a of the first optical element 100.

[0055] The refractive device 350 can refract the input pulse IP reflected from the second optical element 200 and then guided to the first optical element 100. The refractive device 350 can cause a second shift BS between the input pulse IP and the output pulse OP. The occurrence of the second shift BS due to the adjustment of the slope and position of the top surface 350a and bottom surface 350b of the refractive device 350 can be substantially the same as the occurrence of the second shift BS due to the movement of the lens 310 and / or the rotation of the first optical element 100. For example, the second subpath P22 of the second pulse MP can be controlled by using the refractive device 350 to refract the input pulse IP and simultaneously using the actuator 330 to move the lens 310.

[0056] Figure 9 The illustration shows a conceptual schematic diagram of a pulse control optical system in an oscillation unit of a semiconductor manufacturing apparatus, based on some exemplary embodiments of the concept according to the present invention. For ease of description and to avoid repetition of descriptions and references, details may be omitted. Figure 6 , Figure 7 or Figure 8 The components described are the same or substantially the same.

[0057] Reference Figure 9 The pulse-controlled optical system A may also include a monitoring element or monitoring system 500 between the second optical element 200 and the third optical element 300. For example, the monitoring element 500 may have an interferometer structure including a beam splitter 510 and a sensing mirror 530. The beam splitter 510 may be disposed on the second subpath P22. The beam splitter 510 and the lens 310 may overlap in the Z-axis direction. The sensing mirror 530 may be spaced apart from the beam splitter 510, the second optical element 200, and the third optical element 300. The sensing mirror 530 may not be disposed on the second subpath P22. The sensing mirror 530 and the lens 310 may not overlap in the Z-axis direction. The sensing mirror 530 may include, for example, a wavefront sensor (WFS).

[0058] The monitoring element 500 can monitor the position and angle of the second pulse MP. Therefore, the monitoring element 500 can provide feedback on the operation of the control actuator 330 and the rotator (see...). Figure 7 The drive of 110 in the middle and the determination of the refractive device (see 110) Figure 8 The structure of 350 in the middle.

[0059] Semiconductor manufacturing apparatuses according to some exemplary embodiments of the present invention can be configured such that the main pulse is controlled by an optical element, such as a lens, which is positioned along the path along which only the main pulse travels.

[0060] Furthermore, in the operation method of a semiconductor manufacturing apparatus according to some exemplary embodiments of the present invention, the main pulse can be controlled by a pulse control optical system including a lens, thereby improving the stability of the pulse and increasing the productivity of the semiconductor manufacturing apparatus.

[0061] Although the inventive concept has been described in conjunction with some exemplary embodiments shown in the accompanying drawings, those skilled in the art will understand that variations in form and detail may be made therein without departing from the scope of the inventive concept. Therefore, the disclosed embodiments are to be considered illustrative rather than restrictive. The inventive concept is defined by the appended claims (including their equivalents).

Claims

1. A semiconductor manufacturing apparatus, comprising: An oscillation unit includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser is configured to oscillate a first pulse, and wherein the second seed laser is configured to oscillate a second pulse; and The extreme ultraviolet (EUV) generating unit is configured to generate EUV light using the first pulse and the second pulse. The seed module includes: Multiple mirrors are configured to cause the first pulse and the second pulse to travel along a first path and a second path, respectively; and A pulse-controlled optical system, comprising a first optical element, a second optical element, and a third optical element. Specifically, the pulse-controlled optical system operates on the portion of the second path that does not overlap with the first path. The third optical element includes a lens between the first optical element and the second optical element. The second pulse includes an input pulse input to the pulse control optical system and an output pulse output from the pulse control optical system. The input pulse IP travels from the second optical element to the first optical element. The output pulse OP travels from the first optical element to the second optical element, and The pulse control optical system is configured to shift the output pulse relative to the input pulse.

2. The semiconductor manufacturing apparatus according to claim 1, further comprising an amplification unit between the oscillation unit and the extreme ultraviolet generation unit. in, The amplification unit is configured to receive the output pulse of the second pulse and the first pulse.

3. The semiconductor manufacturing apparatus according to claim 1, wherein, The third optical element also includes an actuator configured to control the position of the lens.

4. The semiconductor manufacturing apparatus according to claim 1, wherein, The first optical element and the second optical element are configured to reflect the second pulse.

5. The semiconductor manufacturing apparatus according to claim 1, wherein, The focal length of the lens is the same as the distance between the lens and the first optical element.

6. The semiconductor manufacturing apparatus according to claim 1, further comprising an amplification unit between the oscillation unit and the extreme ultraviolet generation unit. in, The seed module is located between the amplification unit and the first seed laser and the second seed laser.

7. The semiconductor manufacturing apparatus according to claim 1, wherein, The first optical element includes a rotator configured to rotate the central axis of the first optical element.

8. The semiconductor manufacturing apparatus according to claim 1, wherein, The third optical element also includes a refractive device between the second optical element and the lens.

9. The semiconductor manufacturing apparatus according to claim 8, wherein, The refractive device includes a top surface facing the second optical element and a bottom surface facing the lens. Wherein, at least one of the top surface and the bottom surface of the refractive device has an inclination or an angle relative to the top surface of the first optical element.

10. The semiconductor manufacturing apparatus according to claim 1, wherein, The pulse-controlled optical system also includes a monitoring element between the second optical element and the third optical element. The monitoring element has an interferometer structure.

11. The semiconductor manufacturing apparatus according to claim 10, wherein, The monitoring element includes a beam splitter and a sensing mirror, the beam splitter being on the second path and the sensing mirror including a wavefront sensor.

12. A semiconductor manufacturing apparatus, comprising: An oscillation unit includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser is configured to oscillate a first pulse, and wherein the second seed laser is configured to oscillate a second pulse. An extreme ultraviolet (EUV) generating unit includes a target generator and a focusing lens, wherein the EUV generating unit is configured to generate EUV light by colliding the first pulse and the second pulse with corresponding targets generated from the target generator; An amplification unit is located between the oscillation unit and the extreme ultraviolet generation unit, wherein the amplification unit includes a plurality of amplifiers; The transmission unit is configured to cause the first pulse and the second pulse to travel from the amplification unit to the extreme ultraviolet generation unit; and The exposure unit is configured to provide the wafer with extreme ultraviolet light generated from the extreme ultraviolet generation unit. The seed module includes: Multiple mirrors are configured to cause the first pulse and the second pulse to travel along a first path and a second path, respectively; A pulse-controlled optical system, comprising a first optical element, a second optical element, and a third optical element; and At least one camera is configured to monitor either the first pulse or the second pulse. Wherein, the pulse-controlled optical system is located in the portion of the second path that does not overlap with the first path, and The third optical element includes a lens between the first optical element and the second optical element. The second pulse includes an input pulse input to the pulse control optical system and an output pulse output from the pulse control optical system. The input pulse IP travels from the second optical element to the first optical element. The output pulse OP travels from the first optical element to the second optical element, and The pulse control optical system is configured to shift the output pulse relative to the input pulse.

13. The semiconductor manufacturing apparatus according to claim 12, wherein, The amplification unit is configured to receive the output pulse of the second pulse and the first pulse.

14. The semiconductor manufacturing apparatus according to claim 12, wherein, The first optical element has a first central axis. The lens has a second central axis, and The second central axis is spaced apart from the first central axis.

15. The semiconductor manufacturing apparatus according to claim 12, wherein, The first optical element has a first central axis. The lens has a second central axis, and The second central axis is inclined or at an angle relative to the first central axis.

16. The semiconductor manufacturing apparatus according to claim 12, wherein, The seed module is located between the amplification unit and the first seed laser and the second seed laser.

17. A method of operating a semiconductor manufacturing apparatus, the method comprising: The first pulse and the second pulse are oscillated by an oscillation unit, which includes a first seed laser, a second seed laser, and a seed module. In the seed module, the second pulse is controlled to be on the path of the second pulse, wherein the path of the second pulse does not completely overlap with the path of the first pulse; The first pulse and the second pulse are amplified by multiple amplifiers; and The first pulse and the second pulse are made to collide with the corresponding targets to generate extreme ultraviolet light. The control of the second pulse is performed in a pulse control optical system including a lens. Controlling the second pulse includes causing a shift between the input pulse input to the pulse control optical system and the output pulse output from the pulse control optical system. The input pulse IP travels from the second optical element included in the pulse control optical system to the first optical element included in the pulse control optical system. The output pulse OP travels from the first optical element to the second optical element.

Images