Chiral detection device, chiral detection method, separation device, separation method and chiral substance device

Abstract

The chirality detection device of the present invention is a chirality detection device for detecting the chirality of a chiral substance, comprising: a first electrode and a second electrode, which are used to apply a voltage to a test object containing the chiral substance; a spin detection layer, which is arranged to contact the test object; a power supply unit; and a control unit, wherein the power supply unit and the control unit are arranged to form an electric field in the test object by applying a voltage between the first electrode and the second electrode. The control unit is arranged to detect a voltage generated in a direction of the electric field across the spin detection layer or a voltage generated between the spin detection layer and the test object, and is arranged to detect the chirality of the chiral substance based on the detected voltage.

Description

Technical Field

[0001] The invention relates to a chiral detection device, a chiral detection method, a separation device, a separation method and a chiral material device. Background Art

[0002] It is known that there are substances having a molecular structure with hand-to-hand (chirality) or substances having a crystal structure with hand-to-hand (hereinafter, they are collectively referred to as chiral substances). For example, lactic acid C3H6O3 has a chiral molecular structure, and there are D-lactic acid and L-lactic acid in an image and mirror image relationship. In addition, crystal (SiO2 crystal) has a chiral crystal structure. Crystal has a crystal structure in which SiO4 tetrahedrons share vertices. If we focus on the connection method of SiO4, a spiral is formed relative to the extension direction of the crystal (c-axis), and there are crystals with right-handed spirals (right crystals) and crystals with left-handed spirals (left crystals). The crystal structure of the right crystal and the crystal structure of the left crystal are in an image and mirror image relationship.

[0003] A chiral substance may have different properties between the right-handed system and the left-handed system, and methods for detecting the chirality of a chiral substance are known (for example, refer to Patent Documents 1 and 2).

[0004] It is known that in molecular chiral substances, spin-polarized electrons are generated by the chirality-induced spin selection (CISS) effect (for example, see Patent Document 3). In addition, it is known that when spin polarization exhibited by a ferromagnetic body or the like is absorbed by a spin absorption material, a charge flow (inverse spin Hall effect) is generated in a direction orthogonal to the spin direction and the spin flow (for example, see Non-Patent Document 1). In addition, a non-local spin valve capable of detecting a spin flow is known (for example, see Non-Patent Document 2).

[0005] Prior art documents

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Publication No. 2018-13351

[0008] Patent Document 2: Japanese Patent Publication No. 2015-31605

[0009] Patent Document 3: Japanese Patent Publication No. 2015-512159

[0010] Non-patent literature

[0011] Non-patent document 1: T. Kimura et al., Phys. Rev. Lett. 98, 156601 (2007)

[0012] Non-patent document 2: FJ Jedema et al., Nature 416, 713 (2002) Summary of the invention

[0013] Problems to be solved by the present invention

[0014] In conventional chiral detection methods, the objects to be detected are limited to chiral substances contained in solutions or gaseous substances, etc., and it is difficult to detect the chirality of solid substances.

[0015] The present invention has been made in view of the above circumstances, and provides a chirality detection device capable of detecting the chirality of chiral substances in various states.

[0016] Means of solving the problem

[0017] The present invention provides a chirality detection device, which is used to detect the chirality of a chiral substance, and is characterized in that the chirality detection device comprises: a first electrode and a second electrode, which are used to apply a voltage to a test object containing the chiral substance; a spin detection layer, which is configured to contact the test object; a power supply unit; and a control unit, wherein the power supply unit and the control unit are configured to form an electric field in the test object by applying a voltage between the first electrode and the second electrode, and the control unit is configured to detect a voltage generated in a direction of the electric field across the spin detection layer or a voltage generated between the spin detection layer and the test object, and is configured to detect the chirality of the chiral substance based on the detected voltage.

[0018] Effects of the Invention

[0019] The power supply unit and the control unit are configured to form an electric field in the sample containing the chiral substance by applying a voltage between the first electrode and the second electrode. When the electric field is formed in this way, spin-polarized electrons can be generated in the chiral substance through the chirality-induced spin selection (CISS) effect.

[0020] The CISS effect refers to the effect of spin polarization when electrons pass through a chiral polymer. The present inventors have conducted experiments that have shown that even chiral substances other than polymers (such as inorganic chiral crystals) can produce the CISS effect.

[0021] The control unit is configured to detect a voltage generated in a direction that crosses the direction of the electric field of the spin detection layer that is configured to contact the object to be detected or a voltage generated between the spin detection layer and the object to be detected. Since the detected voltage is different depending on the chirality of the chiral substance, the chirality of the chiral substance can be detected based on the detected voltage. This is made clear by experiments conducted by the inventors of the present invention.

[0022] The voltage generated in the spin detection layer is believed to be generated by the inverse spin Hall effect.

[0023] Furthermore, the voltage generated between the spin detection layer and the object being detected is considered to be generated by the same effect as the non-local spin valve.

[0024] In addition, experiments conducted by the inventors of the present invention have shown that the inverse effect of the CISS effect is generated in a chiral material (e.g., an inorganic chiral crystal). When an electric field is applied to the spin detection layer, the inverse effect involved by the opposite theorem holds true, and thus a voltage is generated in the chiral material. The voltage can be detected using the voltage application unit. Since the detected voltage differs depending on the chirality of the chiral material, the chirality of the chiral material can be detected based on the detected voltage. Through experiments conducted by the inventors of the present invention, it can be seen that the inverse process is performed by exchanging the connection between the power supply unit and the control unit of the chiral detection device. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a schematic perspective view of a chirality detection device according to one embodiment of the present invention.

[0026] Figure 2 This is a schematic perspective view of a chirality detection device according to one embodiment of the present invention.

[0027] Figure 3 This is a schematic perspective view of a chirality detection device according to one embodiment of the present invention.

[0028] Figure 4 This is a schematic perspective view of a chirality detection device according to one embodiment of the present invention.

[0029] Figure 5 This is a schematic perspective view of a chirality detection device according to one embodiment of the present invention.

[0030] Figure 6 This is a schematic diagram of a separation device according to one embodiment of the present invention.

[0031] Figure 7 This is a schematic diagram of a separation device according to one embodiment of the present invention.

[0032] Figure 8 This is a schematic perspective view of a chiral material device according to one embodiment of the present invention.

[0033] Fig. 9 This is a photograph of a device for measurement prepared using CrNb3S6 as the test object.

[0034] Fig.10 This is a photograph of a device for measurement prepared using WC as a test object.

[0035] Fig.11 It is a graph showing the change in voltage between the voltage detection electrodes and the change in resistance value when voltage is applied to CrNb3S6 or WC.

[0036] Fig.12 It is a graph showing a change in voltage generated in the spin detection layer (Pt layer) when a voltage is applied to CrNb3S6 or WC, and a graph showing the resistance value of the spin detection layer.

[0037] Fig.13 It is a graph showing a change in voltage generated in the spin detection layer (Pt layer) when a voltage is applied to CrNb3S6 and a graph showing the resistance value of the spin detection layer.

[0038] Fig.14 (a) is a photograph of a device for measurement using CrSi2 as the test object. Fig.14 (b) and Fig.14 (c) is a graph showing the results of a voltage detection experiment using the device.

[0039] Fig.15 (a) is a photograph of a device for measurement using NbSi2 as the test object. Fig.15 (b) and 15(c) are graphs showing the results of voltage detection experiments using the device.

[0040] Fig.16 (a) is a photograph of the equipment prepared for measurement using the left crystal as the object to be tested. Fig.16 (b) is a graph showing the results of a voltage detection experiment using the device.

[0041] Fig.17 (a) is a photograph of the equipment prepared for measurement using the right crystal as the object to be tested. Fig.17 (b) is a graph showing the results of a voltage detection experiment using the device.

[0042] Fig.18 (a) is a photograph of a device for measurement prepared using a chiral molecule dispersion solution as a test object. Fig.18 (b) is a graph showing the results of a voltage detection experiment using the device. DETAILED DESCRIPTION

[0043] The chirality detection device of the present invention is a chirality detection device for detecting the chirality of a chiral substance, and is characterized in that the chirality detection device comprises: a first electrode and a second electrode, which are used to apply a voltage to a test object containing the chiral substance; a spin detection layer, which is configured to contact the test object; a power supply unit; and a control unit, wherein the power supply unit and the control unit are configured to form an electric field in the test object by applying a voltage between the first electrode and the second electrode, and the control unit is configured to detect a voltage generated in a direction of the electric field across the spin detection layer or a voltage generated between the spin detection layer and the test object, and is configured to detect the chirality of the chiral substance based on the detected voltage.

[0044] Preferably, the spin detection layer includes a ferromagnetic material, and the control unit is preferably configured to detect a voltage generated between the spin detection layer and the object to be detected. The voltage detected by the control unit changes according to the spin polarization like a spin valve, so that right-handed chiral substances and left-handed chiral substances can be distinguished.

[0045] The present invention also provides a chirality detection device, which is used to detect the chirality of a chiral substance, and is characterized in that the chirality detection device comprises: a third electrode and a fourth electrode, which are electrically connected to a test object containing the chiral substance; a spin injection layer, which is configured to contact the test object; a power supply unit; and a control unit, wherein the power supply unit and the control unit are configured to pass current through the spin injection layer, and the control unit is configured to use the third electrode and the fourth electrode to detect a voltage generated in a direction transverse to the current direction of the chiral substance, and is configured to detect the chirality of the chiral substance based on the detected voltage.

[0046] The present invention also provides a chirality detection method, which includes: when an electric field is generated in a test object containing a chiral substance, a step of detecting a voltage generated in a direction transverse to the direction of the electric field of a spin detection layer set to contact the test object, or a voltage generated between the spin detection layer and the test object; and a step of detecting the chirality of the chiral substance based on the detected voltage.

[0047] The present invention also provides a separation device for separating right-handed and left-handed systems of chiral substances, and is characterized in that the separation device comprises: a flow path, which is configured to allow a solution, liquid or gas containing the right-handed and left-handed systems to flow; a voltage application unit, which is configured to form an electric field in the solution, liquid or gas flowing through the flow path; and a magnetic field application unit, which is configured to form a magnetic field in the solution, liquid or gas downstream of the electric field, and separates the right-handed and left-handed systems by utilizing the interaction between the spin polarization of the chiral substance generated by the electric field and the magnetic field.

[0048] The present invention also provides a separation method, characterized in that the separation method includes: a step of applying voltage to a solution, liquid or gas containing a chiral substance to generate spin polarization in the chiral substance containing a right-handed system and a left-handed system; and a step of applying a magnetic field to generate a magnetic field in the solution, liquid or gas containing the chiral substance that generates the spin polarization, wherein the right-handed system and the left-handed system are separated by utilizing the interaction between the spin polarization and the magnetic field.

[0049] Hereinafter, an embodiment of the present invention will be described using the drawings. The structures shown in the drawings and the following description are merely exemplary, and the scope of the present invention is not limited to the structures shown in the drawings and the following description.

[0050] Chiral detection device and chiral detection method

[0051] Figure 1 to Figure 5 Each of them is a schematic three-dimensional view of the chirality detection device according to the present embodiment.

[0052] The chirality detection device 20 of the present embodiment is a chirality detection device for detecting the chirality of a chiral substance, and is characterized in that the chirality detection device comprises: voltage applying electrodes 3a, 3b, which are used to apply voltage to a test object 9 containing a chiral substance; a spin detection layer 4, which is configured to be in contact with the test object 9; a power supply unit 5; and a control unit 7, wherein the power supply unit 5 and the control unit 7 are configured to generate an electric field in the test object 9 by applying a voltage between the voltage applying electrodes 3a, 3b, and the control unit 7 is configured to detect a voltage generated in a direction of the electric field transverse to the spin detection layer 4 or a voltage generated between the spin detection layer 4 and the test object 9, and is configured to detect the chirality of the chiral substance based on the detected voltage.

[0053] Chiral substances refer to substances with a molecular structure that has hand-to-hand (chirality) or a substance with a crystal structure that has hand-to-hand. Chiral substances exist in right-handed and left-handed systems. The right-handed and left-handed systems of chiral substances are enantiomers. Chiral substances can be inorganic substances, polymers, organic molecules, or liquid crystals.

[0054] The chirality detection device 20 is a device for detecting the chirality of a substance. For example, the chirality detection device 20 may be a device for detecting whether a substance contained in the test object 9 has chirality. In addition, the chirality detection device 20 may be a device for determining whether the chiral substance contained in the test object 9 is a right-handed substance, a left-handed substance, or a chiral substance (for example, a racemate) that is a mixture of the right-handed substance and the left-handed substance. In addition, the chirality detection device 20 may also be a device for detecting the ratio of the right-handed substance and the left-handed substance contained in the chiral substance. In addition, the chirality detection device 20 may also be a device for measuring the orientation and anisotropy of a chiral substance.

[0055] The object to be detected 9 is the object to be detected by the chiral detection device 20. The object to be detected 9 can be solid, liquid, or gas. When the object to be detected 9 is solid, the object to be detected 9 can be single crystal, polycrystalline, microcrystalline, or powder agglomerate. Figure 1 to Figure 3 In the chiral detection device 20 shown, the object 9 to be detected is a chiral material layer 2 .

[0056] When the object to be detected 9 is a liquid, the object to be detected 9 may be a solution containing chiral substance molecules, a liquid chiral substance, a suspension in which particles of the chiral substance are dispersed in a liquid, or a liquid crystal.

[0057] When the object 9 to be tested is a gas, the object 9 to be tested may be a chiral substance in the gas, a mixed gas containing a chiral substance, or a gas in which particles of a chiral substance are suspended.

[0058] When the object 9 is liquid or gas, Figure 4 and Figure 5 In the illustrated chiral detection device 20 , the sample 9 (solution, liquid or gas 11 containing a chiral substance) can flow or be held in a flow path 16 provided with the voltage applying electrodes 3 a and 3 b and the spin detection layer 4 .

[0059] The power supply unit 5 is a part that supplies power to the voltage-applying electrodes 3a and 3b. In addition, the power supply unit 5 may also be configured to supply power to the control unit 7. In addition, the power supplied from the power supply unit 5 to the voltage-applying electrodes 3a and 3b may also be controlled by the control unit 7. The power supply unit 5 may be a battery or a power supply unit that utilizes power supplied from a power system. The power supplied from the power supply unit 5 to the voltage-applying electrodes 3a and 3b may be controlled by the control unit 7.

[0060] The control unit 7 is a part for controlling the chirality detection device 20. The control unit 7 may be a computer, a microcontroller, or a control substrate. The control unit 7 may include a voltage detection circuit (voltage measurement units 6a, 6b, 6c) or a power regulation circuit.

[0061] The voltage-applying electrodes 3a and 3b are electrodes for applying a voltage to the object 9. The voltage-applying electrodes 3a and 3b are provided to generate an electric field in the object 9 by applying a voltage between the electrodes 3a and 3b. When an electric field is generated in the object 9 by using the electrodes 3a and 3b, spin-polarized electrons can be generated in a chiral substance contained in the object 9 due to a chirality-induced spin selection (CISS) effect.

[0062] The CISS effect refers to the effect of spin polarization when electrons pass through a chiral polymer. The present inventors have conducted experiments that have shown that even chiral substances other than polymers (such as inorganic chiral crystals) can produce the CISS effect.

[0063] When the object 9 is solid, for example Figure 1 to Figure 3 In the illustrated chirality detection device 20 , the voltage applying electrodes 3 a and 3 b may be arranged such that the electrodes 3 a and 3 b are arranged on the side surface or the upper surface of the object 9 .

[0064] When the object 9 is liquid or gas, for example Figure 4 and Figure 5 In the chirality detection device 20 shown, the voltage applying electrodes 3a and 3b may be arranged so as to generate an electric field in the flow path 16. In this case, the voltage applying electrodes 3a and 3b may be plate-shaped electrodes, ring-shaped electrodes, or mesh-shaped electrodes.

[0065] The spin detection layer 4 is a layer that absorbs the spin of the spin polarization generated by the object to be detected 9. The spin detection layer 4 is arranged to be in contact with the object to be detected 9. The material of the spin detection layer 4 can be a material with high spin flow-charge flow conversion efficiency. In this case, due to the inverse spin Hall effect, a charge flow is generated in the spin detection layer 4. In the inverse spin Hall effect, when spin polarization is absorbed by the spin absorption material, a charge flow is generated in a direction orthogonal to the spin direction and the spin flow. Therefore, the direction and magnitude of the electromotive force generated in the spin detection layer 4 vary according to the spin direction of the spin polarization generated in the object to be detected 9.

[0066] In this case, the spin detection layer 4 can be like Figure 1 , 2 , 4, and 5 are arranged like the chiral detection device 20 shown in FIG.

[0067] The material of the spin detection layer 4 is preferably a spin absorption material with a large spin Hall angle. For example, materials with large spin-orbit interaction (Pt, W, etc.), topological insulators, (Weil) semimetals, two-dimensional gas systems, mixed films of metal / oxide or metal / molecule, oxides, molecules, dielectrics, semiconductors, Lasvos systems, etc. can be cited.

[0068] The material of the spin detection layer 4 may be a ferromagnetic material. By bringing such a spin detection layer 4 into contact with the object 9, the spin polarization of the chiral substance contained in the object 9 may generate an electromotive force between the spin detection layer 4 and the object 9, as in a spin valve. In this case, the spin detection layer 4 preferably has an anisotropic shape so as to achieve a uniform magnetization state.

[0069] In this case, the spin detection layer 4 may be formed as Figure 3 The chiral detection device 20 is arranged as shown.

[0070] For example, Figure 1 , Figure 4 In the chiral detection device 20 shown in FIG. 1 , the spin detection layer 4 can be disposed between the voltage applying electrodes 3a and 3b. Figure 2 , 3 5, the spin detection layer 4 may not be disposed between the voltage-applying electrodes 3a and 3b. In addition, the spin polarization generated in the chiral substance of the test object 9 by using the voltage-applying electrodes 3a and 3b is generated not only in the chiral substance between the electrode 3a and the electrode 3b, but also in the chiral substance in the portion of the test object 9 where no electric field is generated. This was made clear by experiments conducted by the present inventors.

[0071] The chirality detection device 20 may include voltage detection electrodes 8a to 8c. For example, Figure 1 The chirality detection device 20 shown has electrodes 8a, 8b, which are arranged to be able to detect the voltage in the x direction of the object 9. In addition, Figure 3 The illustrated chirality detection device 20 has an electrode 8 c electrically connected to the object 9 , and can detect a voltage between the spin detection layer 4 and the object 9 using the electrode 8 c .

[0072] The voltage applying electrodes 3 a and 3 b , the spin detecting layer 4 , the voltage detecting electrodes 8 a to 8 c and the like can be formed by, for example, a vapor deposition method, a spray coating method, or a coating method.

[0073] Next, a method for detecting the chirality of a chiral substance contained in the sample 9 using the chiral detection device 20 is described. The following method can be executed by controlling the chiral detection device 20 by the control unit 7. In addition, the control unit 7 is configured to be able to execute the following method. In addition, the following method can also be executed manually without using the control unit 7.

[0074] Yes Figure 1 , 2 , 4, and 5 are used to illustrate the detection method of the chiral detection device 20 shown in FIG. 4. In this method, no magnetic field is applied to the object 9. In these devices, the voltage measuring unit 6a or the control unit 7 is configured to be able to detect the voltage in the y direction of the spin detection layer 4. In addition, the material of the spin detection layer 4 can be a material that converts spin polarization into a charge flow. For example, the material of the spin detection layer 4 is Pt, W, etc.

[0075] First, a voltage is applied between the voltage-applying electrodes 3a and 3b to generate an electric field in the sample 9. When the electric field is generated in this way, due to the chirality-induced spin selection (CISS) effect, spin polarization can be generated in the chiral substance contained in the sample 9. It can be considered that the polarization direction of the spin polarization generated when the sample 9 contains a right-handed chiral substance is opposite to the polarization direction of the spin polarization generated when the sample 9 contains a left-handed chiral substance.

[0076] Next, the voltage in the y direction of the spin detection layer 4 is detected using the voltage measuring unit 6a or the control unit 7. Since the spin detection layer 4 is set to contact the test object 9, the chiral substance contained in the test object 9 is in contact with the spin detection layer 4, and due to the inverse spin Hall effect, the spin polarization of the chiral substance causes a charge flow in the spin detection layer 4. Since the polarization directions of the spin polarization in the right-handed chiral substance and the left-handed chiral substance are opposite, the direction of the charge flow caused in the spin detection layer 4 is also opposite, and the direction of the electromotive force is also opposite. Therefore, by using the voltage measuring unit 6a or the control unit 7 to detect the voltage in the y direction of the spin detection layer 4, and comparing the direction and magnitude of the electromotive force with the judgment standard, it is possible to determine whether the chiral substance contained in the test object 9 is right-handed or left-handed.

[0077] Yes Figure 3 1 and 2. The detection method of the chiral detection device 20 shown in FIG. 2 is described. In this device, a ferromagnetic material is used as the material of the spin detection layer 4. In addition, the voltage measurement unit 6a or the control unit 7 is configured to be able to detect the voltage between the spin detection layer 4 and the object to be detected 9. In this method, a magnetic field other than the magnetic field generated from the spin detection layer 4 is not applied to the object to be detected 9.

[0078] First, a voltage is applied between the voltage applying electrodes 3a and 3b to generate an electric field in the sample 9. When the electric field is generated in this way, spin polarization can be generated in the chiral substance contained in the sample 9 due to the chirality induced spin selection (CISS) effect.

[0079] Next, the voltage between the spin detection layer 4 and the object 9 is detected using the voltage measuring unit 6a or the control unit 7. Since the spin detection layer 4 composed of a ferromagnetic body is arranged to contact the object 9, like a non-local spin valve, the spin polarization of the chiral substance generates an electromotive force between the spin detection layer 4 and the object 9 according to the magnetization state of the ferromagnetic body. Since the polarization directions of the spin polarization in the right-handed chiral substance and the left-handed chiral substance are opposite, the electromotive force generated between the spin detection layer 4 and the object 9 is different in the right-handed chiral substance and the left-handed chiral substance. Therefore, by using the voltage measuring unit 6a or the control unit 7 to detect the voltage between the spin detection layer 4 and the object 9, and comparing the direction and magnitude of the electromotive force with the judgment standard, it can be determined whether the chiral substance contained in the object 9 is right-handed or left-handed.

[0080] Chiral detection device with the inverse effect of CISS effect

[0081] In the chirality detection device 20, the chirality of the chiral substance is detected by using the CISS effect, but in this embodiment, the chirality of the chiral substance is detected by using the reverse effect of CISS. Therefore, in this embodiment, the spin detection layer 4 is used as the spin injection layer 4, and the voltage application electrodes 3a and 3b are used as electrodes 3a and 3b for detecting the voltage generated in the test object 9. The structure of the device is the same as that of the chirality detection device 20 described above.

[0082] The chirality detection device 20 of the present embodiment is a chirality detection device for detecting the chirality of a chiral substance, and is characterized in that the chirality detection device comprises: an electrode 3a and an electrode 3b, which are electrically connected to a test object 9 containing a chiral substance; a spin injection layer 4, which is configured to be in contact with the test object 9; a power supply unit 5; and a control unit 7, wherein the power supply unit 5 and the control unit 7 are configured to allow current to flow through the spin injection layer 4, and the control unit 7 is configured to detect a voltage generated using the electrodes 3a and the electrodes 3b in a direction transverse to the direction of the current crossing the chiral substance, and is configured to detect the chirality of the chiral substance based on the detected voltage.

[0083] In the present embodiment, the power supply unit 5 supplies power to the spin injection layer 4 , the control unit 7 detects a voltage using the electrodes 3 a and 3 b , and detects the chirality of the chiral substance based on the detected voltage.

[0084] Separation device and separation method

[0085] Figure 6 , Figure 7 This is a schematic diagram of the separation device according to this embodiment.

[0086] The separation device 25 of this embodiment is a separation device 25 for separating right-handed and left-handed systems of chiral substances, and is characterized in that the separation device 25 comprises: a flow path 16, which is configured to allow a solution, liquid or gas containing the right-handed and left-handed systems to flow; a voltage application unit 12, which is configured to form an electric field in the solution, liquid or gas flowing through the flow path 16; and a magnetic field application unit 13, which is configured to form a magnetic field in the solution, liquid or gas downstream of the electric field, and separates the right-handed and left-handed systems by utilizing the interaction between the spin polarization of the chiral substance generated by the electric field and the magnetic field.

[0087] The separation device 25 of this embodiment is a device for separating the right-handed chiral substance 17 and the left-handed chiral substance 18 in the solution, liquid or gas. Therefore, the solution, liquid or gas before separation contains both the right-handed chiral substance 17 and the left-handed chiral substance 18.

[0088] The separation device 25 of this embodiment includes a flow path 16, which is provided to flow a solution, liquid or gas 11 containing a chiral substance. In the flow path 16, voltage applying electrodes 3a, 3b (voltage applying unit 12) are provided to generate an electric field in the solution, liquid or gas 11 containing a chiral substance. The voltage applying electrodes 3a, 3b can be provided so that the direction of the generated electric field is parallel to the flow direction of the flow path 16.

[0089] When a voltage is applied between the electrode 3a and the electrode 3b using the power supply unit 5a (voltage applying unit 12) to generate an electric field, spin polarization can be generated in the right-handed chiral material 17 and the left-handed chiral material 18 flowing through the flow path 16 due to the chirality-induced spin selection (CISS) effect. The polarization direction of the spin polarization generated by the right-handed chiral material 17 is opposite to the polarization direction of the spin polarization generated by the left-handed chiral material 18. In addition, Figure 6 , Figure 7 The relationship between the directions of the arrows of the right-handed chiral substance 17 and the left-handed chiral substance 18 in FIG. 1 is schematic and is not limited to this direction.

[0090] The magnetic field applying unit 13 is configured to form a magnetic field in the flow path 16 downstream of the electric field generated between the voltage applying electrodes 3a and 3b. The magnetic field applying unit 13 may include, for example, power supply units 5a, 5b, 5c and coils 19, 19a, 19b. In addition, the magnetic field applying units 13, 13a, 13b may be permanent magnets or tiny magnets. The magnetic field applying units 13, 13a, 13b may be configured so that the direction of the magnetic field formed in the flow path 16 is parallel to the flow direction of the flow path 16, the direction of the electric field generated between the voltage applying electrodes 3a and 3b, or the spin polarization direction of the right-handed chiral substance 17 and the left-handed chiral substance 18.

[0091] For example, the magnetic field applying unit 13 may be Figure 6 In this device, a coil 19 is wound around the flow path 16, and a power supply unit 5b is used to pass a direct current through the coil 19. As a result, a magnetic field parallel to the flow direction can be generated in the flow path 16.

[0092] When the right-handed chiral substance 17 with spin polarization and the left-handed chiral substance 18 with spin polarization flow in such a magnetic field, due to the relationship between the polarization direction of the spin polarization and the direction of the magnetic field, the speed at which one of the right-handed chiral substance 17 and the left-handed chiral substance 18 flows in the flow path 16 becomes faster, and the speed at which the other flows in the flow path 16 becomes slower. Therefore, the right-handed chiral substance 17 and the left-handed chiral substance 18 can be separated in the flow of the flow path 16. Therefore, in the separation device 25, the right-handed chiral substance 17 and the left-handed chiral substance 18 are separated on the chromatogram.

[0093] For example, you can Figure 7 Magnetic field applying parts 13a and 13b are provided like the separation device 25 shown in FIG. The magnetic field applying parts 13a and 13b are provided so as to form a magnetic field in the flow path 16 by utilizing a leakage magnetic field. The magnetic field applying part 13a includes a power supply part 5b and a coil 19a, and is provided so as to form a leakage magnetic field in the flow path 16. The magnetic field applying part 13b includes a power supply part 5c and a coil 19b, and is provided so as to form a leakage magnetic field in the flow path 16. The magnetic field formed by the magnetic field applying part 13a and the magnetic field formed by the magnetic field applying part 13b are located in the same flow path cross section.

[0094] When the right-handed chiral substance 17 with spin polarization and the left-handed chiral substance 18 with spin polarization flow in such a magnetic field, due to the relationship between the polarization direction of the spin polarization and the direction of the magnetic field, one of the right-handed chiral substance 17 and the left-handed chiral substance 18 flows in the magnetic field formed by the magnetic field applying unit 13a, and the other flows in the magnetic field formed by the magnetic field applying unit 13b. Therefore, during the flow in the flow path 16, the right-handed chiral substance 17 and the left-handed chiral substance 18 can be separated.

[0095] The flow path 16 is branched so that the chiral substance flowing in the magnetic field formed by the magnetic field applying unit 13a flows in the flow path 16a, and the chiral substance flowing in the magnetic field formed by the magnetic field applying unit 13b flows in the flow path 16b. Therefore, the mixing of the right-handed chiral substance 17 and the left-handed chiral substance 18 separated by the magnetic field can be suppressed. Therefore, by recovering the chiral substances from the flow path 16a and the flow path 16b, the right-handed chiral substance 17 and the left-handed chiral substance 18 can be recovered separately.

[0096] Chiral material device

[0097] Figure 8 This is a schematic perspective view of the chiral material device according to this embodiment.

[0098] The chiral material device 30 of this embodiment comprises: a chiral material layer 2; a first voltage applying electrode 3a and a second voltage applying electrode 3b, which are configured to form an electric field in the chiral material layer 2; and a spin detection layer 4, which is configured to contact the chiral material layer 2, wherein the first voltage applying electrode 3a and the second voltage applying electrode 3b are configured to allow at least one of the first voltage applying electrode 3a and the second voltage applying electrode 3b to input an input signal, and are configured to form an electric field in the chiral material layer 2 by inputting the input signal, and the voltage generated in the direction of the electric field across the spin detection layer 4 changes according to the input signal.

[0099] The chiral material device 30 is a device that utilizes the properties of chiral materials, and may be a transistor, a memory, or a logic element.

[0100] The chiral substance layer 2 is a layer containing a chiral substance. The chiral substance layer 2 may be a layer mainly containing either a right-handed chiral substance or a left-handed chiral substance. In addition, the chiral substance layer 2 may have a structure composed of a layer composed of a right-handed chiral substance and a layer composed of a left-handed chiral substance.

[0101] The chiral substance layer 2 may be a single crystal, a polycrystal, a microcrystalline, a liquid crystal, or a powder agglomerate. In addition, the chiral substance layer 2 may be a gel containing a chiral substance. In addition, the chiral substance layer 2 may be a conductor, a semiconductor, or an insulator.

[0102] The first voltage applying electrode 3a and the second voltage applying electrode 3b are electrodes for forming an electric field in the chiral substance layer 2. By applying a voltage between the first voltage applying electrode 3a and the second voltage applying electrode 3b, an electric field is formed in the chiral substance layer 2. The chiral substance device 30 may be configured as follows. Figure 8The device shown in the figure has a pair of voltage applying electrodes 3a and 3b, but may have a plurality of pairs of voltage applying electrodes 3a and 3b.

[0103] When an electric field is generated in the chiral material layer 2 using the electrodes 3a and 3b, spin-polarized electrons can be generated in the chiral material contained in the chiral material layer 2 by the chirality-induced spin selection (CISS) effect. In addition, when the direction of the electric field formed in the chiral material layer 2 changes, the direction of spin polarization changes.

[0104] The spin detection layer 4 is a layer that absorbs the spins of the spin polarization generated in the chiral substance layer 2. For example, Figure 8 The spin detection layer 4 may be provided between the voltage applying electrodes 3a and 3b as in the chiral substance device 30 shown in FIG.

[0105] When a plurality of pairs of voltage applying electrodes 3a and 3b are provided, a plurality of spin detection layers 4 may be disposed between a pair of voltage applying electrodes 3a and 3b and an adjacent pair of voltage applying electrodes 3a and 3b. In this way, the spin detection layer 4 that outputs an output signal can be selected.

[0106] The input unit 26 is configured to input an input signal to at least one of the voltage-applying electrodes 3a and 3b, thereby forming an electric field in the chiral material layer 2 between the voltage-applying electrodes 3a and 3b. Therefore, it is possible to form an electric field in the chiral material layer 2 that changes according to the input signal. For example, the input unit 26 can be configured to change the direction of the electric field formed in the chiral material layer 2 according to the input signal. When the direction of the electric field in the chiral material layer 2 changes, the spin polarization direction of the chiral material layer 2 also changes. Therefore, when Figure 8 When the spin detection layer 4 is provided as in the device 30 shown, the direction of the voltage generated in the direction of the electric field across the spin detection layer 4 also changes according to the input signal. By outputting the direction of the voltage as an output signal from the output unit 27, the input signal can be converted into an output signal.

[0107] In addition, the above description of the chiral detection device 20 and the like is also applicable to the chiral material device as long as there is no contradiction.

[0108] The first chirality detection experiment

[0109] The chiral substance CrNb3S6 is used as the test object, and the Figure 1Device A shown. For CrNb3S6, a single crystal of 16.9μm×9.5μm×500nm is used. CrNb3S6 is arranged in such a way that the c-axis (helical axis) of CrNb3S6 becomes the x-direction. In addition, the spin detection layer is a Pt layer of 2μm×9.5μm×25nm. The resistivity of the Pt layer is 450μΩcm, and the resistivity of the CrNb3S6 single crystal is 650μΩcm.

[0110] Fig. 9 A photograph of the fabricated device A is shown. Wiring (1) (2) is a voltage application electrode, which is an electrode for applying a voltage in the x direction of the CrNb3S6 single crystal. Wiring (5) (6) is a voltage detection electrode, which is an electrode for detecting the voltage in the x direction of the CrNb3S6 single crystal. Wiring (4) (8) is an electrode connected to the end of the Pt layer and detecting the voltage in the y direction of the Pt layer.

[0111] The object to be tested is WC (tungsten carbide), which is an achiral substance. Figure 1 Device B shown. For WC, a material with a size of 16.4 μm × 8.4 μm × 40 nm was used. In addition, the spin detection layer was a Pt layer with a size of 2 μm × 8.4 μm × 25 nm. The resistivity of the Pt layer was 450 μΩcm, and the resistivity of WC was 530 μΩcm.

[0112] Fig.10 A photograph of the fabricated device B is shown. Wiring (1) (2) is a voltage application electrode, which is an electrode for applying a voltage in the x direction of the WC. Wiring (4) (5) is a voltage detection electrode, which is an electrode for detecting the voltage in the x direction of the WC. Wiring (3) (6) is an electrode connected to the end of the Pt layer and detecting the voltage in the y direction of the Pt layer.

[0113] The voltage applied between wiring (1) and (2) was changed in such a way that the current ((1) → (2)) flowing in the CrNb3S6 single crystal of device A was changed from -5 mA to 5 mA, and the voltage V between wiring (5) and (6) was measured. xx (voltage in the x direction of the CrNb3S6 single crystal) and the voltage V between wiring (4) (8) xy (Voltage in the y direction of the Pt layer) In addition, the resistance value R of the CrNb3S6 single crystal was calculated from the measured value. xx and the resistance value R of the Pt layer xy .

[0114] The current value flowing through the CrNb3S6 single crystal from wiring (1) to wiring (2) is set to positive, and the current value flowing from wiring (2) to wiring (1) is set to negative. When the potential of wiring (5) is higher than the potential of wiring (6), the voltage V xxWhen the potential of wiring (4) (facing the right side of the direction in which the positive current flows in CrNb3S6) is higher than the potential of wiring (8) (facing the left side of the direction in which the positive current flows in CrNb3S6), the voltage V xy is a positive voltage.

[0115] The voltage applied between wiring (1) and (2) was changed so that the current ((1) → (2)) flowing in WC of device B was changed from -5 mA to 5 mA, and the voltage V between wiring (4) and (5) was measured. xx (voltage in the x direction of WC) and the voltage V between wiring (3) and (6) xy (Voltage in the y direction of the Pt layer) In addition, the resistance value R of WC was calculated from the measured value. xx and the resistance value R of the Pt layer xy .

[0116] The current value flowing through WC is set to positive when it flows from wiring (1) to wiring (2), and the current value is set to negative when it flows from wiring (2) to wiring (1). When the potential of wiring (4) is higher than the potential of wiring (5), the voltage V xx When the potential of wiring (3) (facing the right side of the direction in which positive current flows in WC) is higher than the potential of wiring (6) (facing the left side of the direction in which positive current flows in WC), the voltage V xy is a positive voltage.

[0117] Fig.11 (a) shows the measured voltage value V in the horizontal direction xx changes, Fig.11 (b) shows the calculated resistance value R xx In either device A or B, V xx Both change according to the voltage applied between wirings (1) and (2). In addition, R xx is constant.

[0118] Fig.12 (a) shows the measured voltage value V in the longitudinal direction of the Pt layer xy changes, Fig.12 (b) shows the calculated resistance value R xy In device B (WC), V is not output. xy , R xy In contrast, in device A (CrNb3S6), when a voltage is applied in such a way that a positive current flows through CrNb3S6, a positive voltage V is generated in the Pt layer. xy When a voltage is applied in such a way that a negative current flows in CrNb3S6, a negative voltage V is generated in the Pt layer. xy Voltage V xyIt is proportional to the current I flowing in CrNb3S6. In addition, in the manufactured device A, the larger the current I flowing in CrNb3S6, the greater the R xy It gradually gets bigger, showing slightly non-linear motion.

[0119] Therefore, it is known that when the object to be tested is a chiral substance, an electromotive force is generated in the Pt layer as the spin detection layer when current flows through the object to be tested. Therefore, by flowing current through the object to be tested and investigating whether an electromotive force is generated in the spin detection layer, it is possible to determine whether the object to be tested is a chiral substance.

[0120] The reason why an electromotive force is generated in the spin detection layer can be considered to be that a spin polarization state is generated in the chiral material due to the chirality-induced spin selection (CISS) effect, and this spin polarization state is converted into a charge flow of Pt (spin detection layer), a material with a large spin-orbit interaction, due to the inverse spin Hall effect, thereby generating an electromotive force.

[0121] Next, the voltage V was measured by changing the voltage application electrode using the device A. xy (voltage in the y direction of the Pt layer). Specifically, Fig.13 As shown by the solid arrow in (a), the voltage V between wirings (4) and (8) is measured when a current flows between wiring (5) and wiring (2). xy (voltage in the y direction of the Pt layer). Fig.13 As shown by the dotted arrow in (a), the voltage V between wirings (4) and (8) is measured when a current flows between wiring (6) and wiring (2). xy (Voltage in the y direction of the Pt layer). xy Calculate the resistance value R of the Pt layer xy .

[0122] In addition, regarding the distance between the electrodes for applying the voltage (the distance through which the current in the CrNb3S6 single crystal flows), the solid arrow is longer than the dotted arrow. xy The positive and negative values ​​are the same as those measured using the above-mentioned apparatus A.

[0123] Fig.13 (b) represents the voltage V xy The graph of the changes in Fig.13 (c) is the resistance value R xy The graph of the changes in . Fig.12 Similarly, when a voltage is applied so that a positive current flows through CrNb3S6, a positive voltage V is generated in the Pt layer. xy When a voltage is applied in such a way that a negative current flows in CrNb3S6, a negative voltage V is generated in the Pt layer. xy .

[0124] Therefore, it can be seen that even when the Pt layer as the spin detection layer is not disposed between the voltage applying electrodes, an electromotive force is generated in the spin detection layer.

[0125] As a reason for generating an electromotive force in a spin detection layer arranged in a manner to contact an area of ​​the chiral material where no current flows, it can be considered that the spin polarization state generated in the chiral material due to the chirality-induced spin selection (CISS) effect causes the spin polarization of the part of the chiral material where no current flows. It can be considered that the induced spin polarization is converted into a charge flow of Pt (spin detection layer) through the inverse spin Hall effect to generate an electromotive force. It can be seen that although there is distance dependence, the electromotive force can be detected at a relatively long distance. Specifically, in addition to detection of about a few μm, signals at a distance of about 10 mm are also detected.

[0126] Chiral discrimination experiment

[0127] An experiment was conducted to determine whether the left-handed and right-handed systems of a chiral substance can be distinguished based on the electromotive force generated in the spin detection layer.

[0128] The left-handed chiral material uses CrSi2(P6422(D6 5 )) in bulk polycrystals. CrSi2 has a crystal structure with an atomic arrangement that includes a left-handed spiral. The direction of the spiral axis in the polycrystal is disordered (non-oriented sample).

[0129] Fig.14 (a) shows a photograph of a device C made using CrSi2 bulk polycrystal. Wiring (1)(2) as electrodes for voltage application is provided at both ends of the CrSi2 bulk polycrystal. Two Pt layers are provided between the wiring (1)(2), and wiring (3)(5) is connected to both ends of the Pt layer on the left, and wiring (4)(6) is connected to both ends of the Pt layer on the right.

[0130] The voltage applied between wiring (1) and (2) was changed so that the current ((1) → (2)) flowing in the CrSi2 bulk polycrystal of device C changed from -21 mA to 21 mA, and the voltage V between wiring (3) and (4) was measured. xx (voltage in the x direction of the CrSi2 bulk polycrystal) and the voltage V between wirings (4) and (6) xy (Voltage in the y direction of the Pt layer).

[0131] The current value flowing through the CrSi2 block polycrystalline from wiring (1) to wiring (2) is set to positive, and the current value flowing from wiring (2) to wiring (1) is set to negative. When the potential of wiring (3) is higher than the potential of wiring (4), the voltage V xxWhen the potential of wiring (4) (facing the right side of the direction of positive current flow in the CrSi2 block polycrystal) is higher than the potential of wiring (6) (facing the left side of the direction of positive current flow in the CrSi2 block polycrystal), the voltage V xy is a positive voltage.

[0132] Fig.14 (b) shows the measured voltage value V in the x direction xx changes, Fig.14 (c) shows the measured voltage value V in the y direction of the Pt layer xy The voltage value V xx It changes according to the voltage applied between wiring (1) and (2). When a voltage is applied in such a way that a positive current flows through the CrSi2 bulk polycrystalline, the voltage V xy When a voltage is applied in such a way that a negative current flows through the CrSi2 block polycrystal, the voltage V xy Is a positive voltage. Voltage V xy The proportionality constant between the current I flowing in the CrSi2 bulk polycrystal is a negative proportional relationship.

[0133] Right-handed chiral materials use NbSi2(P6422(D6 4 )) bulk polycrystal. NbSi2 has a crystal structure with a right-handed spiral atomic arrangement. The direction of the spiral axis in the polycrystal is disordered (non-oriented sample).

[0134] Fig.15 (a) shows a photograph of a device D made using NbSi2 bulk polycrystal. Wiring (1)(2) as electrodes for voltage application is provided at both ends of the NbSi2 bulk polycrystal. Two Pt layers are provided between the wiring (1)(2), and wiring (3)(5) is connected to both ends of the Pt layer on the left, and wiring (4)(6) is connected to both ends of the Pt layer on the right.

[0135] The voltage applied between wiring (1) and (2) was changed so that the current ((1) → (2)) flowing in the NbSi2 bulk polycrystal of device D changed from -21 mA to 21 mA, and the voltage V between wiring (5) and (6) was measured. xx (voltage in the x direction of NbSi2 bulk polycrystal) and the voltage V between wiring (4) (6) xy (Voltage in the y direction of the Pt layer).

[0136] The current value flowing through the NbSi2 bulk polycrystalline from wiring (1) to wiring (2) is set to positive, and the current value flowing from wiring (2) to wiring (1) is set to negative. When the potential of wiring (5) is higher than the potential of wiring (6), the voltage V xxWhen the potential of wiring (4) (facing the right side of the direction of positive current flow in NbSi2 bulk polycrystal) is higher than the potential of wiring (6) (facing the left side of the direction of positive current flow in NbSi2 bulk polycrystal), the voltage V xy is a positive voltage.

[0137] Fig.15 (b) shows the measured voltage value V in the x direction xx changes, Fig.15 (c) shows the measured voltage value V in the y direction of the Pt layer xy The voltage value V xx It varies depending on the voltage applied between the wiring (1) and (2). When a voltage is applied in such a way that a positive current flows through the NbSi2 bulk polycrystalline, the voltage V xy When a voltage is applied in such a way that a negative current flows through the NbSi2 bulk polycrystal, the voltage V xy is a negative voltage. Voltage V xy The proportionality constant is positively proportional to the current I flowing in the NbSi2 bulk polycrystal.

[0138] From these experiments, it is known that the direction of the electromotive force generated in the spin detection layer of the device using the right-handed chiral substance is opposite to the direction of the electromotive force generated in the spin detection layer of the device using the left-handed chiral substance. Therefore, it is known that by passing a current through the object to be tested (chiral substance) and investigating the direction of the electromotive force generated in the spin detection layer, it is possible to determine whether the chiral substance is right-handed or left-handed.

[0139] The reason why the directions of the electromotive forces generated in the spin detection layer are opposite is that the polarization directions of the spin polarization states of the chiral material are opposite in the right-handed system and the left-handed system due to the chirality-induced spin selection (CISS) effect. Therefore, it is considered that the directions of the electromotive forces of the spin detection layer generated by converting the spin current by the inverse spin Hall effect are also opposite in the right-handed system and the left-handed system.

[0140] In devices C and D using polycrystalline chiral materials as non-oriented samples, since an electromotive force is generated in the spin detection layer, it can be seen that the direction of the electromotive force generated in the spin detection layer is determined by whether the chiral material is right-handed or left-handed, and has nothing to do with the direction of the spin axis. Therefore, it can be seen that the CISS effect is established at the molecular level (or crystal level) of the chiral material. Therefore, it can be considered that the chiral material in the solution, the liquid crystal as a chiral material, and the insulator as a chiral material can also be distinguished as right-handed or left-handed.

[0141] Second chirality detection experiment

[0142] In the above-mentioned first chirality detection experiment and chirality discrimination experiment, an electric conductor is used as the chiral substance of the test object, and in the second chirality detection experiment, the left crystal and right crystal of the insulator are used as the test object to conduct the experiment. The left crystal is a left-handed chiral substance with a left-handed spiral atomic arrangement in the crystal structure, and the right crystal is a right-handed chiral substance with a right-handed spiral atomic arrangement in the crystal structure. In addition, since the crystal is an insulator, no current flows in the chiral substance. Therefore, the inverse effect of the CISS effect is used for measurement. That is, a voltage is applied to both ends of the Pt layer, and the voltage generated in the chiral substance is detected.

[0143] Fig.16 (a) is a photograph of device E made using the left crystal. Wiring (1)(2) serving as voltage detection electrodes is provided at both ends of the left crystal. A Pt layer is provided between the wirings (1)(2), and wirings (3)(4) are connected to both ends of the Pt layer. The Pt layer functions as a spin detection layer in the first chirality detection experiment, but functions as a voltage application electrode in the second chirality detection experiment using the reverse effect.

[0144] The voltage (pulse voltage) applied to the Pt layer was changed using wiring (3) (4) and the voltage V between wiring (1) (2) was measured. yx (voltage in the x direction of the crystal).

[0145] The current value when the current flowing through the Pt layer flows from wiring (3) to wiring (4) is set to positive, and the current value when the current flows from wiring (4) to wiring (3) is set to negative. When the potential of wiring (1) (facing the right side of the direction in which the positive current flows in the Pt layer) is higher than the potential of wiring (2) (facing the left side of the direction in which the positive current flows in the Pt layer), the voltage V yx is a positive voltage.

[0146] Fig.16 (b) shows the measured voltage value V in the x direction of the crystal. yx The graph of the changes in . Fig.16 In (b), the voltage applied to the Pt layer is represented by the current value I (mA).

[0147] When the voltage applied to wiring (3) (4) is changed, an electromotive force is generated in the crystal. In addition, the measured voltage value V generated in the left crystal is yx The proportionality constant is negatively proportional to the voltage applied to the Pt layer. yx The changing trend of is the same as that of the first chirality detection experiment and chirality discrimination experiment.

[0148] Fig.17(a) shows a photograph of a device F made using the right crystal. Wiring (1) and (2) are provided at both ends of the right crystal as electrodes for voltage detection. A Pt layer is provided between wirings (1) and (2), and wirings (3) and (4) are connected to both ends of the Pt layer. The Pt layer functions as a spin detection layer in the first chirality detection experiment, but functions as a voltage application electrode when the reverse effect is used.

[0149] The voltage (pulse voltage) applied to the Pt layer was changed using wiring (3) (4) and the voltage V between wiring (1) (2) was measured. yx (voltage in the x direction of the crystal).

[0150] The current value when the current flowing through the Pt layer flows from wiring (3) to wiring (4) is set to positive, and the current value when the current flows from wiring (4) to wiring (3) is set to negative. When the potential of wiring (1) (facing the right side of the direction in which the positive current flows in the Pt layer) is higher than the potential of wiring (2) (facing the left side of the direction in which the positive current flows in the Pt layer), the voltage V yx is a positive voltage.

[0151] Fig.17 (b) shows the measured voltage value V in the x direction of the right crystal. yx The graph of the changes in . Fig.17 In (b), the voltage applied to the Pt layer is represented by the current value I (mA).

[0152] When the voltage applied to wiring (3) (4) is changed, an electromotive force is generated in the crystal. In addition, the measured voltage value V generated on the right crystal is yx The proportionality constant is positively proportional to the voltage applied to the Pt layer. yx The changing trend of is the same as that of the first chirality detection experiment and chirality discrimination experiment.

[0153] From the experimental results of apparatus E and apparatus F, it can be seen that by investigating the direction of the electromotive force generated in the chiral material, it is possible to determine whether the chiral material, which is an insulator, is right-handed or left-handed.

[0154] The reason why electromotive force is generated in the chiral material of device E and device F using the chiral material as an insulator can be considered as follows. When a voltage is applied to the Pt layer, a spin current is injected from the Pt layer into the chiral material due to the spin Hall effect, and spin polarization is generated in the chiral material. The spin polarization of the chiral material can be considered to generate electromotive force in the chiral material due to the inverse effect of the chirality-induced spin selection (CISS) effect.

[0155] The third chirality detection experiment

[0156] In the third chiral detection experiment, a chiral molecule dispersion solution of tartaric acid in which chiral molecules are dispersed is used as a test object for the experiment.

[0157] Fig.18 (a) is a photograph showing device G. In device G, three platinum electrodes are provided on a glass substrate, and wirings (1) and (2) are connected to both ends of the upper platinum electrode, wirings (3) and (4) are connected to both ends of the middle platinum electrode, and wirings (5) and (6) are connected to both ends of the lower platinum electrode. Then, a chiral molecule dispersion solution is dripped onto the substrate so as to overlap with the three platinum electrodes.

[0158] The voltage applied between wirings (2) (6) is varied in such a manner that the current flowing in the chiral molecule dispersion solution in device G (the current flowing from the upper platinum electrode to the lower platinum electrode) is -100μA to +100μA, and the voltage V between wirings (3) (4) is measured.

[0159] The current value when the current flowing through the chiral molecule dispersion solution flows from the wiring (2) to the wiring (6) is set to positive, and the current value when the current flowing through the chiral molecule dispersion solution flows from the wiring (6) to the wiring (2) is set to negative.

[0160] When the potential of wiring (3) (facing the right side of the direction in which positive current flows in the chiral molecule dispersion solution) is higher than the potential of wiring (4) (facing the left side of the direction in which positive current flows in the chiral molecule dispersion solution), voltage V is a positive voltage.

[0161] Fig.18 (b) shows the change of the measured voltage value V. The voltage value V changes according to the voltage applied between the wiring (2) and (6). When the voltage is applied in a manner that a positive current flows through the chiral molecule dispersion solution, the voltage value V is a negative voltage, and when the voltage is applied in a manner that a negative current flows through the chiral molecule dispersion solution, the voltage value V is a positive voltage. The proportionality constant between the voltage V and the current I flowing through the chiral molecule dispersion solution is a negative proportional relationship.

[0162] Thus, the changing tendency of the voltage value V is the same as that in the first and second chirality detection experiments and the chirality discrimination experiment.

[0163] Description of Reference Numerals

[0164] 2: Chiral material layer; 3a, 3b: Voltage application electrode; 4: Spin detection layer; 5, 5a, 5b, 5c: Power supply unit; 6a, 6b, 6c: Voltage measurement unit; 7: Control unit; 8a, 8b, 8c: Voltage detection electrode; 9: Test object; 11: Solution, liquid or gas containing chiral substance; 12: Voltage application unit; 13, 13a, 13b: Magnetic field application unit; 15: Flow path component; 16, 16a, 16b: Flow path; 17: Right-handed chiral substance; 18: Left-handed chiral substance; 19, 19a, 19b: Coil; 20: Chiral detection device; 25: Separation device; 26: Input unit; 27: Output unit; 30: Chiral substance device.

Claims

1. A chirality detection device, which is used to detect the chirality of a chiral substance, characterized in that: The chiral detection device comprises: a first electrode and a second electrode for applying a voltage to a test object containing the chiral substance; a spin detection layer arranged to be in contact with the test object; a power supply unit; and a control unit. The spin detection layer is arranged not to contact the first electrode and the second electrode, The power supply unit and the control unit are configured to form an electric field in the object to be detected by applying a voltage between the first electrode and the second electrode. The spin detection layer is a layer that absorbs spins of spin polarization generated in the object due to a chirality-induced spin selection effect generated by forming an electric field by applying a voltage between the first electrode and the second electrode. And the control unit is configured to detect a voltage generated in a direction transverse to the direction of the electric field of the spin detection layer or a voltage generated between the spin detection layer and the object to be detected, and is configured to detect the chirality of the chiral substance based on the detected voltage.

2. The chirality detection device according to claim 1, wherein: The spin detection layer includes a ferromagnetic body, The control unit is configured to detect a voltage generated between the spin detection layer and the object to be detected.

3. A chirality detection device, which is used to detect the chirality of a chiral substance, characterized in that: The chiral detection device comprises: a third electrode and a fourth electrode electrically connected to a test object containing the chiral substance; a spin injection layer arranged to be in contact with the test object; a power supply unit; and a control unit. The spin injection layer is arranged not to contact the third electrode and the fourth electrode, The power supply unit and the control unit are configured to flow a current through the spin injection layer and inject a spin current from the spin injection layer into the object to be tested to generate spin polarization in the object to be tested. The spin polarization of the object generates an electromotive force in the object through the inverse effect of the chirality-induced spin selection effect. And the control section is configured to detect a voltage generated in a direction transverse to the direction of the current passing through the chiral substance using the third electrode and the fourth electrode, and is configured to detect the chirality of the chiral substance based on the detected voltage.

4. A chiral detection method, comprising: When an electric field is generated in a test object containing a chiral substance, a step of detecting a voltage generated in a direction that crosses a direction of the electric field of a spin detection layer provided in contact with the test object or a voltage generated between the spin detection layer and the test object; as well as a step of detecting the chirality of the chiral substance based on the detected voltage, The spin detection layer is arranged not to be in contact with the electrode for generating the electric field, The spin detection layer is a layer that absorbs spins of spin polarization generated in the object due to a chirality-induced spin selection effect caused by forming an electric field in the object.

5. A separation device for separating right-handed and left-handed chiral substances, characterized in that: The separation device comprises: a flow path configured to flow a solution, liquid or gas containing the right-handed system and the left-handed system; a voltage applying unit configured to form an electric field in the solution, liquid or gas flowing through the flow path; and a magnetic field applying unit configured to form a magnetic field in the solution, the liquid or the gas downstream of the electric field, The right-handed system and the left-handed system are separated by utilizing the interaction between the spin polarization generated in the chiral material by the chirality-induced spin selection effect generated by the electric field and the magnetic field.

6. A separation method, characterized in that: The separation method comprises: applying voltage to a solution, liquid or gas containing a chiral substance, so as to generate spin polarization in the chiral substance containing a right-handed system and a left-handed system through a chirality-induced spin selection effect; and applying a magnetic field to generate a magnetic field in the solution, liquid or gas containing the chiral substance generating the spin polarization, The right-handed system and the left-handed system are separated by utilizing the interaction between the spin polarization and the magnetic field.

7. A chiral material device, characterized in that: The chiral material device comprises: a chiral material layer; a first electrode and a second electrode, which are configured to form an electric field in the chiral material layer; and a spin detection layer, which is configured to contact the chiral material layer. The spin detection layer is configured not to contact the first electrode and the second electrode. The spin detection layer is a layer that absorbs spins of spin polarization generated in the chiral substance layer due to a chirality-induced spin selection effect generated by forming an electric field by applying a voltage between the first electrode and the second electrode, The first electrode and the second electrode are configured so that at least one of the first electrode and the second electrode inputs an input signal, and are configured to form the electric field in the chiral substance layer by inputting the input signal. A voltage generated in a direction of the electric field across the spin detection layer varies according to an input signal.

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