Semiconductor device package including leads in the form of drilled screws

Abstract

A semiconductor device package (100) includes a die carrier (11), at least one semiconductor die (20) disposed on the carrier (11), the semiconductor die (20) including at least one contact pad on a major face distal from the carrier (11), a seal (30) disposed over the semiconductor die (20), an electrical connector (40) electrically connected with the contact pad, and a drilled screw (50) threaded through the seal (30) and connected with the electrical connector (40).

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a semiconductor device package and a method for manufacturing a semiconductor device package. BACKGROUND

[0002] In many electronic systems, converters such as DC / DC converters, AC / DC converters or DC / AC converters have to be employed in order to generate currents, voltages and / or frequencies to be used by electronic circuits, e.g. motor drive circuits. Converter circuits as mentioned before usually comprise one or more half-bridge circuits, each half-bridge circuit being provided by two semiconductor power switches, e.g. power MOSFET devices, and further components, e.g. diodes connected in parallel to the transistor devices, and passive components, e.g. inductances and capacitances. The switching of the power MOSFET devices can be controlled by a semiconductor control chip. Several components of the converter circuit can in principle be provided as separate components mounted on a printed circuit board. Alternatively, parts or all of the components can be accommodated in a single semiconductor device package to form a multi-chip module, which can have the advantage of simplifying the assembly of the entire converter circuit on the board and can reduce the space required on the board.

[0003] However, for these types of semiconductor device packages, there are stable challenges regarding the formation of external contacts and the connection of the external contacts with the contact pads of the semiconductor die. Semiconductor device packages often require a vertical routing of electrical contacts, i.e. upwards from the layer on which the semiconductor die is assembled. As an example, a specific package can be employed in which the substrate is direct copper bonding (DCB) and the vertical interconnect is formed by a solder sleeve with a press-in pin. This assembly is subsequently protected by a soft silicone potting. This soft potting has severe disadvantages compared to a hard molding compound, as it is less protective against external ions, less rigid against mechanical forces and expensive. If a standard molding compound can be used, the external frame can be saved and its functionality can be taken over by the molding itself. Additionally, a high performance IMS (insulated metal substrate) can replace the DCB, as the mechanical rigidity can also be covered by the molding. In any case, the desired flexibility of the pin position makes the molding of such assemblies very difficult.

[0004] For these and other reasons, there is a need for the present disclosure. SUMMARY

[0005] A first aspect of the present disclosure relates to a semiconductor device package comprising: a die carrier; at least one semiconductor die arranged on the die carrier; a sealing arranged above the semiconductor die; an electrical connector electrically connected with a contact pad of the semiconductor die or with another electrical device; and a metal drilled screw threaded through the sealing and connected with the electrical connector.

[0006] A second aspect of this disclosure relates to a method for manufacturing a semiconductor device package, comprising: providing a die carrier; disposing at least one semiconductor die on the die carrier; electrically connecting the semiconductor die or another electrical device to an electrical connector; applying a sealing layer over the semiconductor die, the die carrier, and the electrical connector; and screwing a metal drill screw through the sealing layer such that the end of the drill screw contacts the electrical connector. Attached Figure Description

[0007] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and, together with the description, serve to explain the principles of the embodiments. Other embodiments and many anticipated advantages of the embodiments will be readily understood, as they become better understood by referring to the following detailed description.

[0008] The elements in the accompanying drawings are not necessarily proportional to each other. Similar reference numerals designate corresponding similar parts.

[0009] Figure 1 A schematic cross-sectional side view of a semiconductor device package according to a first aspect of the example is shown, wherein an electrical connector is formed by a sleeve, and wherein the enlarged cross-section shows in more detail the connection between the screw and the electrical connector.

[0010] Figure 2 include Figure 2 A and Figure 2 B, and showed according to Figure 1 An example of a complete semiconductor device package, shown in perspective top view. Figure 2 A shows the completed package, and Figure 2 B shows a portion of the seal being broken to reveal the encapsulation inside the package.

[0011] Figure 3 A schematic cross-sectional side view of a semiconductor device package according to a first aspect of the example is shown, wherein the electrical connector is not connected to the semiconductor die, but to another electrical device.

[0012] Figure 4 include Figure 4 A to Figure 4 H, and a perspective view showing different examples of drill screws.

[0013] Figure 5 include Figure 5 A and Figure 5 B, and a corresponding portion of another example of a semiconductor device package is shown in a perspective top view (A) and a cross-sectional side view (B) through two adjacent electrical connectors.

[0014] Figure 6 include Figure 6 A and Figure 6 B, and another example of a semiconductor device package is shown in perspective top view (A) and cross-sectional side view through the electrical connector.

[0015] Figure 7 A flowchart of a method for manufacturing a semiconductor device package according to the second aspect is shown. Detailed Implementation

[0016] Various aspects and embodiments will now be described with reference to the accompanying drawings, wherein similar reference numerals are generally used throughout to refer to similar elements. In the following description, numerous specific details are set forth for purposes of explanation in order to provide a thorough understanding of one or more aspects of the embodiments. However, it will be apparent to those skilled in the art that one or more aspects of the embodiments can be practiced with a less detailed description. In other instances, known structures and elements are shown in illustrative form to facilitate the description of one or more aspects of the embodiments. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of this disclosure. It should also be noted that the drawings are not drawn to scale, or are not necessarily drawn to scale.

[0017] In the detailed description below, reference is made to the accompanying drawings, which form a part of this document, and specific aspects of this disclosure may be practiced therein by way of illustration. In this regard, directional terms such as “top,” “bottom,” “front,” “back,” etc., may be used with reference to the orientation of the described drawings. Since components of the described device can be positioned in a number of different orientations, the directional terms are for illustrative purposes and are by no means limiting. It should be understood that other aspects may be utilized and structural or logical changes may be made without departing from the scope of this disclosure. Therefore, the following detailed description should not be construed as limiting, and the scope of this disclosure is defined by the appended claims.

[0018] Furthermore, while a particular feature or aspect of an embodiment may be disclosed only with respect to one of several embodiments, such a feature or aspect may be combined with one or more other features or aspects of other embodiments, as may be desired and advantageous for any given or particular application. Moreover, with regard to the use of the terms “comprising,” “having,” “with,” or other variations thereof in the detailed description or claims, these terms are intended to be inclusive in a manner similar to the term “comprising.” The terms “coupled” and “connected,” as well as derivatives, may be used. It should be understood that these terms may be used to indicate that two elements cooperate or interact with each other, whether they are in direct physical or electrical contact, or whether they are not in direct contact with each other. Furthermore, the term “exemplary” is meant only as an example, not as best or optimal. Therefore, the following detailed description should not be construed as limiting, and the scope of this disclosure is defined by the appended claims.

[0019] Embodiments of semiconductor modules and methods for manufacturing semiconductor modules may utilize various types of transistor devices. Embodiments may use transistor devices embodied in semiconductor dies or semiconductor chips, wherein the semiconductor die or semiconductor chip may be provided in the form of a block of semiconductor material, such as that manufactured from and diced from a semiconductor wafer, or in another form in which additional process steps (e.g., applying a sealing layer to the semiconductor die or semiconductor chip) have been performed. Embodiments may also use horizontal or vertical transistor devices, wherein these structures may be provided in the form of a horizontal transistor structure (where all contact elements of the transistor devices are provided on one of the main surfaces of the semiconductor die), or in the form of a vertical transistor structure (e.g., a MOS transistor structure or an IGBT (Insulated Gate Bipolar Transistor) structure) where at least one electrical contact element is arranged on a first main surface of the semiconductor die and at least one other electrical contact element is arranged on a second main surface opposite to the main surface of the semiconductor die.

[0020] In any case, a semiconductor die or semiconductor chip may include contact elements or contact pads on one or more of its outer surfaces, wherein the contact elements serve to electrically contact the semiconductor die. Contact elements can have any desired form or shape. For example, they can have the form of a bonding pad, i.e., a flat contact layer on the outer surface of the semiconductor die. Contact elements or contact pads can be made of any conductive material, such as a metal (e.g., aluminum, gold, or copper), or a metal alloy, or a conductive organic material, or a conductive semiconductor material. Contact elements can also be formed as a stack of one or more of the aforementioned materials.

[0021] Embodiments of semiconductor device packaging may include a seal or sealing material having a semiconductor die or transistor device embedded therein. The sealing material can be any electrically insulating material, such as any type of molding material, any type of resin material, or any type of epoxy resin material. The sealing material can also be a polymer material, polyimide material, thermoplastic material, silicone material, ceramic material, and glass material. The sealing material may also include any of the above materials and may also include an embedded filler material, such as a thermally conductive additive. For example, these filler additives may be made of AlO or Al2O3, AlN, BN, or SiN. Furthermore, for example, the filler additive may have a fibrous shape and may be made of carbon fibers or nanotubes.

[0022] Figure 1 A cross-sectional side view representation of a semiconductor device package according to an example is shown.

[0023] Figure 1 The semiconductor device package 100 includes a direct copper bonding substrate (DCB) 10, which typically includes a ceramic layer 12 covered by a first upper metallization layer 11 and a second lower metallization layer 13. The first metallization layer 11 may include one or more first metallization regions 11A (die carriers), and one or more semiconductor dies 20 may be disposed on one or more first metallization regions 11A. This example illustrates one metallization region 11A, with two semiconductor dies 20 disposed on one metallization region 11A. The semiconductor die 20 may be, for example, a semiconductor transistor die (such as an IGBT die), or one semiconductor die 20 may be a semiconductor transistor die and the other may be a semiconductor diode die. Generally, each of the semiconductor transistor dies may be constructed such that a first lower main surface includes a first contact pad (particularly a drain contact pad), and a second upper main surface includes a second contact pad (particularly a source contact pad) and a third contact pad (particularly a gate contact pad). The semiconductor diode die may also include a vertical structure having a first contact pad on its first lower main surface and a second contact pad on its second upper main surface. For example, the semiconductor transistor die and the semiconductor diode die can be applied to the first metallization region 11A using silver paste, solder, or sintering paste. Two semiconductor dies 20 may be connected to each other, but are not shown herein for simplicity. Each semiconductor die 20 may include at least one electrical contact pad on a main surface remote from the substrate 10.

[0024] In addition, the seal 30 is disposed above the semiconductor die 20, such that the seal 30 covers the upper main surface and side surface of the semiconductor die 20 and the DCB 10.

[0025] The first metallization layer 11 may also include one or more second metallization regions 11B that can be used as intermediate electrical connectors. The metallization regions 11B can be connected to the contact pads of the semiconductor die 20 via bonding wires 60. In addition, a metal sleeve 40 (electrical connector) may be disposed on the metallization region 11B, and the metal sleeve 40 is sized to receive a drill screw 50.

[0026] If it is possible Figure 1 As seen in the enlarged cross-section, the drill screw 50 may include a drilled end section 51, a screw section 52 adjacent to the drilled end section 51, and a rod-shaped section 53 adjacent to the screw section 52. The drill screw 50 drills into and is screwed through the seal 30 until the drilled end section 51 reaches the metal sleeve 40. The drilled end section 51 may then be drilled further into the metal sleeve 40. The length of the screw section 52 and the thickness of the seal 30 are sized such that the screw section 52 is fully screwed into the seal 30. Alternatively, the screw section may not be fully screwed into the seal, and a portion of the screw section may lie above the upper surface of the seal 30.

[0027] If it is still possible Figure 1 As seen in the magnified cross-section, the metal sleeve 40 includes an inner cavity 41, which includes an open upper end into which a drilling screw 50 is drilled. The transverse diameter of the drilled section 51 is slightly larger than the transverse diameter of the inner cavity of the metal sleeve 40.

[0028] It should be added that, Figure 1 Two semiconductor dies 20 are shown, which can be connected to the corresponding electrical connector 40 and drill screw 50 in the same manner as described above. However, it is also possible that one of the semiconductor dies 20 is connected to an external connector in a different manner, wherein, for example, the external connector is provided by a metal sleeve, and crimp pins are inserted into the metal sleeve.

[0029] according to Figure 1 The drill screw 50 is screwed into the seal 30 through the upper main face of the seal 30. However, it should be added that the drill screw can also be screwed into the seal through any other outer wall of the seal (e.g., through one or more of the side walls of the seal).

[0030] Figure 2 include Figure 2 A and Figure 2 B, and shows a perspective top view of an example of a complete semiconductor device package.

[0031] Figure 2B illustrates an example of a semiconductor device package 200, which includes a DCB 210 and a plurality of semiconductor dies 220 disposed on a first upper metallization layer of the DCB 210. The semiconductor dies 220 may be semiconductor transistor dies (e.g., IGBTs) and semiconductor diode dies. It can be seen that several of the semiconductor dies 220 are connected to corresponding metallization regions 211B of the DCB 210 via bonding wires. These metallization regions 211B are electrically connected to corresponding sleeves 240 disposed on the upper main surface of the metallization regions 211B. Furthermore, drilling screws 250 are screwed through a seal 230 and drilled into the upper portions of the sleeves 240 respectively.

[0032] Figure 3 A cross-sectional side view representation of a semiconductor device package according to another example is shown. Figure 3 Semiconductor device package 300 and Figure 1 The semiconductor device package 100 is similar, therefore only the differences will be explained below. For Figure 1 The semiconductor device package 100, wherein one or both of the depicted semiconductor dies 20 are connected to the electrical connector 40. Figure 3 In the semiconductor device package 300, the semiconductor die 20 is not connected to the electrical connector 40. Instead, another electrical device 70 (e.g., a temperature sensor 70) is disposed on the second metallization region 11B and is thereby electrically connected to the electrical connector 40. The semiconductor die 20 may be connected to another type of external connector, which is not shown herein for simplicity.

[0033] like Figure 3 The example of the semiconductor device package 300 shown is intended to clearly illustrate that one or more semiconductor dies 20 present in the semiconductor device package 300 need not be combined as Figure 1 As shown and explained, it is electrically connected to the drill screw. However, it should be added that this does not mean the semiconductor die 20 must be connected to other types of external connectors. At least some of them can also be connected to the electrical connector 40 and the drill screw 50, such as... Figure 1 The example of semiconductor device package 100 is shown.

[0034] Figure 4 include Figure 4 A to Figure 4 H, and a perspective view showing different examples of drill screws.

[0035] As can be seen in these examples, the drill screw also includes a driver section located at the end of the rod-shaped section 53, or integrated into the end of the rod-shaped section 53.

[0036] Figure 4 A shows the combinationFigure 1 An example of a drill screw used in an example of a semiconductor device package is shown and described. This drill screw 50 includes a drill section 51, a screw section 52, and a rod-shaped section 53. Furthermore, this drill screw 50 has a square profile over its entire length, such that the upper end section of the rod-shaped section 53 can serve as a drive section, at which a square wrench can be engaged to screw the drill screw 50 into a seal.

[0037] Figure 4 B and Figure 4 C shows the same Figure 4 Example A is similar to other examples of drill screws. Figure 4 B and Figure 4 The drilling screws 150 and 250 shown in C are... Figure 4 The only difference in drill screw 50 of type A is that the length of rod-shaped sections 153 and 253 is extended at the expense of the length of screw sections 152 and 252 and drill sections 151 and 251. Figure 4 In the drill screw 150 of type B, the lengths of both the screw section 152 and the drill end section 151 are shortened to the point where they are within... Figure 4 Approximately half the length of the drill screw in A. Figure 4 In the drilled screw 250 of C, the drilled section 251 has approximately the same length as the drilled section 51 of the drilled screw 50, but with a reduced diameter, while the screw section 252 is shortened so that it has only about one thread. The rod-shaped sections 153 and 253 include, as... Figure 4 A square profile in the drill screw 50.

[0038] Figure 4 D illustrates another example of a drill screw 350, which includes a drill section 351, a screw section 352, a rod-shaped section 353, and a driver section 354. This means that in this example of the drill screw 350, the rod-shaped section 353 and the driver section 354 are clearly distinguishable from each other. The driver section 354 also includes a square outline.

[0039] Figure 4 E illustrates another example of a drill screw 450, which includes a drill section 451, a screw section 452, a rod-shaped section 453, and a driver section 454. (Compared to...) Figure 4 Similar to the drill screw 350 of D, in this example of the drill screw 450, the rod-shaped section 453 and the actuator section 454 are clearly distinguishable from each other. The actuator section 454 also includes a square profile.

[0040] Figure 4 F to Figure 4 H shows another example of a drill screw, which includes a drive section different from the drive section of the drill screw previously shown.

[0041] Figure 4 F illustrates an example of a drilled screw 550 formed after a conventional countersunk screw. Thus, the drilled screw 550 includes a drilled section 551 and a screw section 552 similar to the drilled section 51 and screw section 52 of the drilled screw 50, a rod-shaped section 553 similar to the rod-shaped section 353 of the drilled screw 350, and a driver section 554 formed as a tapered head similar to a conventional countersunk screw. On the upper surface of the tapered head, there may be any provided hexagonal socket or Phillips head groove, or any other type of socket or groove to which a conventional wrench or pliers can engage.

[0042] Figure 4 G illustrates an example of a drill screw 650, which includes drill sections 651 and 652 similar to the drill sections 51 and 52 of a drill screw 50, a rod-shaped section 653 similar to the rod-shaped section 353 of a drill screw 350, and an actuator section 654 formed in the shape of an octagonal screw head, which can be driven by a suitable conventional wrench or pliers. Of course, the actuator section 654 can also be hexagonal.

[0043] Figure 5 H illustrates an example of a drill screw 750, which includes drill sections 751 and 752 similar to the drill sections 51 and 52 of the drill screw 50, a rod section 753 similar to the rod section 353 of the drill screw 350, and an actuator section 754 integrated into a cavity in the upper portion of the rod section 753. The cavity of the actuator section 754 is formed as an internal octagon or octagonal sleeve, which can be driven by a suitable conventional wrench or pliers. Of course, in the same case, the actuator section 754 can also be formed as a hexagon.

[0044] Furthermore, it should be added that this disclosure is certainly not limited to Figure 5 A to Figure 5 The type of drill screw shown in H. Conversely, any other type of drill screw can be used.

[0045] Figure 5 include Figure 1 A and Figure 5 B, and another example of a semiconductor device package is shown in a perspective top view (A) and a cross-sectional side view through two adjacent electrical connectors (B).

[0046] Figure 6 The semiconductor device package 400 includes and Figure 6 The structure is similar to that of the semiconductor device package 100, so only the differences between them will be explained below. Figure 6The semiconductor device package 400 also includes a DCB 310, which includes a first upper metallization layer 311, comprising a first metallization region 311A ​​and a second metallization region 311B. A plurality of semiconductor dies 320 are disposed on the first metallization region 311A, and several of the semiconductor dies 320 are connected to corresponding second metallization regions 311B of the first metallization layer 311 of the DCB 310 via bonding wires 360. These second metallization regions 311B are electrically connected to corresponding metal blocks 340 disposed on the upper main surface of the second metallization region 311B. Furthermore, drilling screws 350 are screwed through a seal 330 and drilled into the upper portion of each metal block 340. The metal blocks may be, for example, copper blocks.

[0047] Figure 6 include Figure 1 A and Figure 6 B, and another example of a semiconductor device package is shown in a perspective top view (A) and a cross-sectional side view through the electrical connector (B).

[0048] Figure 7 The semiconductor device package 500 includes and Figure 7 The structure is similar to that of the semiconductor device package 100, so only the differences between them will be explained below. ​ The semiconductor device package 500 also includes a DCB 410, which includes a first upper metallization layer 411, comprising a first metallization region 411A and a second metallization region 411B. A plurality of semiconductor dies 420 are disposed on the first metallization region 411A, and several of the semiconductor dies 420 are connected to corresponding second metallization regions 411B of the first metallization layer 411 of the DCB 410 via bonding wires 460. These second metallization regions 411B do not serve as intermediate electrical connectors but are directly electrically connected by drill screws 450. More specifically, the drill screws 450 are screwed through a seal 430 and drilled into the upper portion of each second metallization region 411B. In the case of the DCB 410, for proper operation, the first upper metallization layer 411 may need to be formed slightly thicker or significantly thicker than usual.

[0049] ​ A flowchart of a method for manufacturing a semiconductor device package according to the second aspect is shown.

[0050] ​Method 600 includes: providing a die carrier (610); disposing at least one semiconductor die on the die carrier, the semiconductor die including at least one contact pad (620); electrically connecting the contact pad to an electrical connector (630); applying a sealing layer over the semiconductor die, the die carrier and the electrical connector (640); and screwing a metal drill screw through the sealing layer such that the end of the drill screw contacts the electrical connector (650).

[0051] According to an example of method 500, providing a die carrier includes providing one of the group consisting of a lead frame, a direct copper bonding substrate, a direct aluminum bonding substrate, and an active metal brazing substrate, wherein the die carrier is part of one of the group.

[0052] According to an example of method 500, the seal includes a first upper main surface remote from the core carrier, and a drill screw is turned such that the drill screw extends through the first upper main surface of the seal.

[0053] According to an example of method 500, turning a drilled screw involves drilling the screw into an electrical connector.

[0054] Other examples of method 500 can be explained by adding one or more of the features described above in conjunction with the semiconductor device package according to the first aspect.

[0055] Example 1 is a semiconductor device package comprising: a die carrier; at least one semiconductor die disposed on the die carrier; a seal disposed above the semiconductor die; an electrical connector electrically connected to the semiconductor die or to another electrical device; and a metal drill screw screwed through the seal and connected to the electrical connector.

[0056] Example 2 is a semiconductor device package according to Example 1, wherein a drill screw is drilled into an electrical connector.

[0057] Example 3 is a semiconductor device package according to Example 1 or 2, wherein the drill screw includes a drill end section, a screw section adjacent to the drill end section, and a rod-shaped section adjacent to the screw section.

[0058] Example 4 is a semiconductor device package according to Example 3, wherein the drill screw further includes a driver section located at the end of the rod-shaped section or integrated in the end of the rod-shaped section.

[0059] Example 5 is a semiconductor device package according to any of the preceding examples, further comprising a substrate, wherein the substrate includes a die carrier and is one of the group consisting of a lead frame, a direct copper bonding substrate, a direct aluminum bonding substrate, and an active metal brazing substrate.

[0060] Example 6 is a semiconductor device package according to Example 5, wherein the substrate is one of the group consisting of a direct copper bonding substrate, a direct aluminum bonding substrate, or an active metal brazing substrate, wherein the substrate includes a ceramic layer or a dielectric layer, wherein the ceramic layer is particularly one or more of AlO, AlN, and Al2O3, and the dielectric layer is particularly Si3N4.

[0061] Example 7 is a semiconductor device package according to any of the preceding examples, wherein the seal includes a first upper main surface remote from the die carrier, wherein a drill screw extends through the first upper main surface of the seal.

[0062] Example 8 is a semiconductor device package according to any of the preceding examples, wherein the electrical connector is one of the following:

[0063] -Including the inner lumen cannula,

[0064] - Metal block, and

[0065] - A metal layer of one of a direct copper bonding substrate, a direct aluminum bonding substrate, or an active metal brazing substrate.

[0066] Example 9 is a semiconductor device package according to any of the preceding examples, wherein the drill screw is made of one of Cu, Cu alloy, Al alloy or steel.

[0067] Example 10 is a semiconductor device package according to any of the preceding examples, comprising: a plurality of semiconductor transistor dies disposed on a die carrier, at least one of the semiconductor transistor dies including at least one contact pad on a main surface remote from the die carrier;

[0068] Multiple semiconductor diode dies are disposed on a die carrier, wherein at least one of the semiconductor diode dies is connected in parallel with one of the semiconductor transistor dies.

[0069] Multiple electrical connectors, wherein at least one of the electrical connectors is connected to one of the contact pads of a semiconductor transistor die; and

[0070] Multiple metal drill screws, wherein at least one of the metal drill screws is screwed through a seal and connected to an electrical connector.

[0071] Example 11 is an electronic device according to Example 10, wherein semiconductor transistor dies and semiconductor diode dies are interconnected to form an AC / AC converter circuit, an AC / DC converter circuit, a DC / AC converter circuit, a frequency converter, or a DC / DC converter circuit.

[0072] Example 12 is a method for manufacturing a semiconductor device package, comprising: providing a die carrier; disposing at least one semiconductor die on the die carrier; electrically connecting the semiconductor die or another electrical device to an electrical connector; applying a sealing layer over the semiconductor die, the die carrier and the electrical connector; and screwing a metal drill screw through the sealing layer such that the end of the drill screw contacts the electrical connector.

[0073] Example 13 is the method according to Example 12, wherein providing the die carrier includes providing one of the group consisting of a lead frame, a direct copper bonding substrate, a direct aluminum bonding substrate and an active metal brazing substrate, wherein the die carrier is part of one of the group.

[0074] Example 14 is a method according to any one of Examples 11 to 13, wherein the seal includes a first upper main surface remote from the core carrier, and a drill screw is turned such that the drill screw extends through the first upper main surface of the seal.

[0075] Example 15 is a method according to any one of Examples 11 to 14, wherein turning a drilled screw involves drilling the screw into an electrical connector.

[0076] While this disclosure has been shown and described with respect to one or more embodiments, changes and / or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In particular, with respect to the various functions performed by the aforementioned components or structures (components, devices, circuits, systems, etc.), unless otherwise indicated, the terminology used to describe these components (including references to “device”) is intended to correspond to any component or structure performing the specified function of said component (e.g., functionally equivalent), even if structurally not equivalent to the disclosed structure performing the functions in the exemplary embodiments of this disclosure shown herein.

Claims

1. A semiconductor device package (100), comprising: Core carrier (11); At least one semiconductor die (20) is disposed on the die carrier (11); A seal (30) is disposed above the semiconductor die (20); An electrical connector (40) is electrically connected to the semiconductor die (20) or to another electrical device; as well as A metal drill screw (50) is screwed through the seal (30) and connected to the electrical connector (40). The end of the metal drill screw extends through the first upper main surface of the seal, which is opposite to the core carrier.

2. The semiconductor device package (100) according to claim 1, wherein The metal drill screw (50) is drilled into the electrical connector (40).

3. The semiconductor device package (100) according to claim 1, wherein The metal drill screw (50) includes a drill end section, a screw section adjacent to the drill end section, and a rod-shaped section adjacent to the screw section.

4. The semiconductor device package (100) according to claim 3, wherein The metal drill screw also includes a driver section located at the end of the rod-shaped section or integrated into the end of the rod-shaped section.

5. The semiconductor device package (100) according to claim 1, further comprising: Substrate (10), wherein the substrate (10) includes the die carrier (11) and is one of the group consisting of a lead frame, a direct copper bonding substrate, a direct aluminum bonding substrate and an active metal brazing substrate.

6. The semiconductor device package (100) according to claim 5, wherein The substrate (10) is one of the following: a direct copper bonding substrate, a direct aluminum bonding substrate, or an active metal brazing substrate. The substrate (10) includes a ceramic layer or a dielectric layer.

7. The semiconductor device package (100) according to claim 6, wherein The ceramic layer includes one or more of AlO, AlN, and Al2O3.

8. The semiconductor device package (100) according to claim 6, wherein The dielectric layer comprises Si3N4.

9. The semiconductor device package (100) according to any one of claims 1-8, wherein The electrical connector (40) is one of the following: -Including the inner lumen cannula, - Metal block, and - A metal layer of one of a direct copper bonding substrate, a direct aluminum bonding substrate, or an active metal brazing substrate.

10. The semiconductor device package (100) according to any one of claims 1-8, wherein The metal drill screw (50) is made of one of Cu, Cu alloy, Al alloy or steel.

11. The semiconductor device package according to any one of claims 1-8, further comprising: Multiple semiconductor transistor dies are disposed on the die carrier (11), and at least one of the semiconductor transistor dies includes at least one contact pad; A plurality of semiconductor diode dies are disposed on the die carrier (11), wherein at least one of the semiconductor diode dies is connected in parallel with one of the semiconductor transistor dies; A plurality of electrical connectors, wherein at least one of the electrical connectors is connected to one of the contact pads of the semiconductor transistor die; and A plurality of metal drill screws, wherein at least one of the metal drill screws is screwed through the seal (30) and connected to the electrical connector (40).

12. The semiconductor device package of claim 11, wherein... The semiconductor transistor die and the semiconductor diode die are interconnected to form an AC / AC converter circuit, an AC / DC converter circuit, a DC / AC converter circuit, a frequency converter, or a DC / DC converter circuit.

13. A method (600) for manufacturing a semiconductor device package, comprising: Provide a core carrier (610); At least one semiconductor die is disposed on the die carrier (620); Electrically connect the semiconductor die or another electrical device to the electrical connector (630); A sealing layer (640) is applied over the semiconductor die, the die carrier, and the electrical connector; as well as The metal drilled screw is screwed through the seal so that the end of the metal drilled screw contacts the electrical connector (650). The end of the metal drill screw extends through the first upper main surface of the seal, which is opposite to the core carrier.

14. The method of claim 13, wherein The die carrier includes one of the group consisting of a lead frame, a direct copper bonding substrate, a direct aluminum bonding substrate, and an active metal brazing substrate, wherein... The core carrier is part of one of the group.

15. The method according to any one of claims 13 and 14, wherein, Tightening the metal drill screw includes drilling the screw into the electrical connector.

Images