Semiconductor device and method for removing oxygen from a semiconductor device

Abstract

The application discloses a semiconductor device and an oxygen removal method of the semiconductor device, and the semiconductor device comprises a process cavity, an oxygen removal pipeline and an oxygen detection device, the oxygen detection device comprises an oxygen detection pipeline, a switching ball valve and an oxygen sensor, the oxygen detection pipeline comprises a first pipeline, a second pipeline and a third pipeline, the first pipeline, the second pipeline and the third pipeline are arranged in parallel and are connected with the oxygen removal pipeline and the switching ball valve respectively, the oxygen sensor is arranged on the third pipeline, and the switching ball valve is configured to: in an oxygen removal stage, the switching ball valve connects the first pipeline and the second pipeline, and in an oxygen detection stage, the switching ball valve connects the first pipeline and the third pipeline. According to the semiconductor device provided by the embodiment of the application, residual high-oxygen-concentration gas can be prevented from flowing to the oxygen sensor and causing the machine to issue an alarm, and the high-oxygen-concentration gas can also be prevented from flowing through the oxygen sensor and accelerating the aging of the oxygen sensor.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more specifically to a semiconductor device and a method for removing oxygen from the semiconductor device. Background Technology

[0002] In the high-temperature heat treatment process of wafers, the oxygen concentration in the process chamber is critical. If the oxygen concentration is insufficient, oxides will form on the wafer surface, leading to deterioration in product performance. To meet the oxygen concentration requirements of the process, a large amount of nitrogen is typically introduced before the high-temperature process to remove oxygen from the process chamber. However, the oxygen removal system of this technology is inaccurate and easily triggers alarms on the equipment. Furthermore, the oxygen sensor in the oxidation detection device is prone to damage and aging. Summary of the Invention

[0003] As described in the background section, the oxygen detection results of the existing deoxygenation system are inaccurate, which can easily lead to alarms from the machine and the oxygen sensor is prone to damage and aging.

[0004] The inventors discovered that in existing deoxygenation systems, during the initial stage of deoxygenation, a portion of the high-concentration oxygen mixture enters the branch pipeline of the oxygen detection device. This mixture is difficult to remove by the end of the deoxygenation process. When the oxygen detection function is activated, the high-concentration oxygen mixture enters the oxygen sensor. Under the catalysis of platinum, negatively charged oxygen ions are adsorbed onto the inner and outer surfaces of the zirconia. Since there is more oxygen in the atmosphere than in the machine's pipeline, the side open to the atmosphere adsorbs more negative ions than the side open to the machine's pipeline, and the concentration difference between the two sides generates an electromotive force. This electrical signal is processed by a computer and fed back to the oxygen concentration in the process chamber. When the oxygen concentration reaches the minimum concentration required for the process within a specified time, the process automatically proceeds to the next step. If the minimum concentration is not reached, the machine triggers an alarm. Therefore, the high concentration of oxygen entering the oxygen sensor from the branch pipeline of the oxygen detection device easily triggers the alarm, and prolonged exposure to high-concentration oxygen also accelerates the aging of the oxygen sensor.

[0005] In view of this, the present invention proposes a semiconductor device that can prevent high concentrations of oxygen from entering the oxygen sensor, thereby preventing the body from issuing an alarm and accelerating the aging of the oxygen sensor.

[0006] A semiconductor device according to an embodiment of the present invention is characterized in that it comprises: a process chamber having an oxygen desiccant inlet and an oxygen desiccant outlet; an oxygen desiccant pipeline connected to the oxygen desiccant outlet and an exhaust device respectively; and an oxygen detection device comprising an oxygen detection pipeline, a switching ball valve, and an oxygen sensor. The oxygen detection pipeline comprises a first pipeline, a second pipeline, and a third pipeline, the first pipeline, the second pipeline, and the third pipeline being arranged in parallel and each connected to the oxygen desiccant pipeline and the switching ball valve respectively. The first pipeline, the second pipeline, and the third pipeline are sequentially connected to the oxygen desiccant pipeline in the gas flow direction. The oxygen sensor is disposed on the third pipeline. The switching ball valve is configured such that: during the oxygen desiccant stage, the switching ball valve connects the first pipeline and the second pipeline; and during the oxygen detection stage, the switching ball valve connects the first pipeline and the third pipeline.

[0007] According to an embodiment of the semiconductor device of the present invention, by providing a second pipeline and a switching ball valve connected to the first pipeline, the second pipeline and the third pipeline respectively, the switching ball valve is controlled to connect different pipelines in the deoxygenation stage and the oxygen detection stage, so that the high oxygen concentration gas remaining in the oxygen detection pipeline in the deoxygenation stage can be discharged, avoiding the high oxygen concentration gas remaining in the oxygen detection stage from flowing to the oxygen sensor and causing inaccurate oxygen concentration detection and alarm, and also avoiding the high oxygen concentration gas flowing through the oxygen sensor and accelerating the aging of the oxygen sensor.

[0008] According to some embodiments of the present invention, the oxygen detection line further includes a fourth line, which is connected to the switching ball valve and the deoxygenation gas supply device respectively. The switching ball valve is configured such that: during the deoxygenation stage, the switching ball valve connects the third line and the fourth line; and during the oxygen detection stage, the switching ball valve blocks the fourth line.

[0009] According to some embodiments of the present invention, the switching ball valve includes a switching valve body and a switching valve core. The switching valve body has four valve ports. The switching valve core is rotatably disposed in the switching valve body between a first position and a second position. The first pipeline, the second pipeline, the third pipeline, and the fourth pipeline are respectively connected to the four valve ports one by one. When the switching valve core is in the first position, the valve port connected to the first pipeline is connected to the valve port connected to the second pipeline, and the valve port connected to the third pipeline is connected to the valve port connected to the fourth pipeline. When the valve core is in the second position, the valve port connected to the first pipeline is connected to the valve port connected to the third pipeline.

[0010] Optionally, the switching valve core is provided with a first channel, and when the switching valve core is in the second position, the valve port connected to the first pipeline and the valve port connected to the third pipeline are connected through the first channel.

[0011] Furthermore, the switching valve core is provided with a second channel and a third channel. When the switching valve core is in the first position, the second channel connects the valve port connected to the first pipeline and the valve port connected to the second pipeline, and the third channel connects the valve port connected to the third pipeline and the valve port connected to the fourth pipeline. When the switching valve core is in the second position, the switching valve core sidewall located on the second channel side blocks the second pipeline, and the switching valve core sidewall located on the third channel side blocks the fourth pipeline.

[0012] Optionally, the maximum inner diameter of the switching valve body is 1.5-3 times the maximum inner diameter of the oxygen detection pipeline.

[0013] Optionally, the switching ball valve further includes a valve shaft and a drive device, wherein the valve shaft is connected to the switching valve core, and the drive device drives the valve shaft to move the switching valve body.

[0014] According to some embodiments of the present invention, the switching valve core and the switching valve body are made of corrosion-resistant materials.

[0015] According to some embodiments of the present invention, the semiconductor device further includes a first control valve disposed on the first pipeline, a second control valve disposed on the second pipeline, and a fourth control valve disposed on the fourth pipeline.

[0016] Optionally, the first control valve, the second control valve, and the fourth control valve are all backflow preventers.

[0017] Optionally, the first control valve, the second control valve, and the fourth control valve are all located adjacent to the switching ball valve.

[0018] According to some embodiments of the present invention, the oxygen sensor is disposed at the end of the third pipeline connected to the switching ball valve and adjacent to the switching ball valve.

[0019] The present invention also proposes a method for removing oxygen from semiconductor devices.

[0020] According to an embodiment of the present invention, a method for deoxygenating a semiconductor device includes a process chamber, a deoxygenation pipeline, and an oxygen detection device. The oxygen detection device includes an oxygen detection line, a switching ball valve, and an oxygen sensor. The oxygen detection line includes a first line, a second line, and a third line, which are arranged in parallel and are respectively connected to the deoxygenation pipeline and the switching ball valve. The first line, the second line, and the third line are sequentially connected to the deoxygenation pipeline in the gas flow direction. The oxygen sensor is disposed on the third line. The deoxygenation method includes: introducing deoxygenating gas into the process chamber of the semiconductor device; after the deoxygenating gas has been introduced into the process chamber for a first preset time, adjusting the switching ball valve to connect the first line and the second line, with the oxygen sensor in an unopened state, while the deoxygenating gas continues to be introduced into the process chamber; after the deoxygenating gas has been continuously introduced into the process chamber for a second preset time, adjusting the switching ball valve to connect the first line and the third line, while simultaneously opening the oxygen sensor.

[0021] According to some embodiments of the present invention, the oxygen detection pipeline further includes a fourth pipeline connected to the switching ball valve and the deoxygenated gas supply device. Adjusting the switching ball valve to connect the first pipeline and the second pipeline includes: adjusting the switching ball valve to connect the first pipeline and the second pipeline, and also connecting the third pipeline and the fourth pipeline; adjusting the switching ball valve to connect the first pipeline and the third pipeline includes: adjusting the switching ball valve to connect the first pipeline and the third pipeline while blocking the second pipeline and the fourth pipeline.

[0022] According to some embodiments of the present invention, the semiconductor device further includes a first control valve disposed on the first pipeline, a second control valve disposed on the second pipeline, and a fourth control valve disposed on the fourth pipeline. After adjusting the switching ball valve to connect the first pipeline and the second pipeline, the device further includes: opening the first control valve, the second control valve, and the fourth control valve. Before adjusting the switching ball valve to connect the first pipeline and the third pipeline, the device further includes: opening the first control valve and closing the second control valve and the fourth control valve.

[0023] According to some embodiments of the present invention, before adjusting the switching ball valve to connect the first pipeline and the second pipeline, and connecting the third pipeline and the fourth pipeline, and simultaneously opening the oxygen sensor, the method further includes: introducing deoxygenated gas into the fourth pipeline through the deoxygenated gas supply device. Attached Figure Description

[0024] Figure 1This is a schematic diagram of the structure of a semiconductor device according to an embodiment of the present invention;

[0025] Figure 2 This is a schematic diagram of a switching ball valve in a semiconductor device according to an embodiment of the present invention, wherein the switching valve core is located in a first position.

[0026] Figure 3 This is a schematic diagram of a switching ball valve in a semiconductor device according to an embodiment of the present invention, wherein the switching valve core is located in the second position.

[0027] Figure 4 This is a schematic diagram of a switching ball valve in a semiconductor device according to another embodiment of the present invention, wherein the switching valve core is located in a first position.

[0028] Figure 5 This is a schematic diagram of a switching ball valve in a semiconductor device according to another embodiment of the present invention, wherein the switching valve core is located in the second position.

[0029] Figure 6 This is a schematic flowchart of a method for removing oxygen from a semiconductor device according to an embodiment of the present invention.

[0030] Figure label:

[0031] 100: Semiconductor equipment;

[0032] 1: Process chamber; 11: Process chamber; 12: Deoxygenation inlet; 13: Deoxygenation outlet;

[0033] 2: Deoxygenation pipeline;

[0034] 3: Oxygen detection device; 31: Oxygen detection pipeline; 311: First pipeline; 312: Second pipeline; 313: Third pipeline; 314: Fourth pipeline; 315: Valve port connecting to the first pipeline; 316: Valve port connecting to the second pipeline; 317: Valve port connecting to the third pipeline; 318: Valve port connecting to the fourth pipeline; 32: Switching ball valve; 321: Switching valve body; 322: Valve chamber; 323: Switching valve core; 324: First channel; 325: Second channel; 326: Third channel; 33: First control valve; 34: Second control valve; 35: Fourth control valve; 36: Oxygen sensor;

[0035] 4: Exhaust device. Detailed Implementation

[0036] The semiconductor device proposed in this invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0037] This invention was obtained by the inventor based on the following understanding and discovery:

[0038] As described in the background section, the oxygen detection results of the existing deoxygenation system are inaccurate, which can easily lead to alarms from the machine and the oxygen sensor is prone to damage and aging.

[0039] The inventors discovered that in existing deoxygenation systems, during the initial stage of deoxygenation, a portion of the high-concentration oxygen mixture enters the branch pipeline of the oxygen detection device. This mixture is difficult to remove by the end of the deoxygenation process. When the oxygen detection function is activated, the high-concentration oxygen mixture enters the oxygen sensor. Under the catalysis of platinum, negatively charged oxygen ions are adsorbed onto the inner and outer surfaces of the zirconia. Since there is more oxygen in the atmosphere than in the machine's pipeline, the side open to the atmosphere adsorbs more negative ions than the side open to the machine's pipeline, and the concentration difference between the two sides generates an electromotive force. This electrical signal is processed by a computer and fed back to the oxygen concentration in the process chamber. When the oxygen concentration reaches the minimum concentration required for the process within a specified time, the process automatically proceeds to the next step. If the minimum concentration is not reached, the machine triggers an alarm. Therefore, the high concentration of oxygen entering the oxygen sensor from the branch pipeline of the oxygen detection device easily triggers the alarm, and prolonged exposure to high-concentration oxygen also accelerates the aging of the oxygen sensor.

[0040] A semiconductor device 100 according to an embodiment of the present invention will now be described with reference to the accompanying drawings.

[0041] like Figure 1 As shown, the semiconductor device 100 according to an embodiment of the present invention may include: a process chamber 1, an oxygen removal pipeline 2, and an oxygen detection device 3.

[0042] The process chamber 1 has a deoxygenation inlet 12 and a deoxygenation outlet 13, such as Figure 1 As shown, a process chamber 11 is defined within the process chamber 1, and both the deoxygenation inlet 11 and the deoxygenation outlet 12 are connected to the process chamber 11. Specifically, the process chamber 1 is a reaction chamber for a high-temperature heat treatment process used in semiconductors. The high-temperature heat treatment process is carried out within the process chamber 11 and has very high requirements for the oxygen concentration within the process chamber 11. In order to meet the oxygen concentration requirements of the process, a large amount of deoxygenating gas (e.g., nitrogen) is introduced before the high-temperature process to remove oxygen from the process chamber 11 so that the oxygen concentration meets the standard. The deoxygenation inlet 12 can be connected to a deoxygenating gas supply device. The deoxygenating gas enters from the deoxygenation inlet 12, and the mixture of oxygen and deoxygenating gas exits from the deoxygenation outlet 13.

[0043] The deoxygenation pipe 2 is connected to the deoxygenation outlet 13 and the exhaust device 4 respectively. In this way, the mixture of oxygen and deoxygenated gas flows from the deoxygenation outlet 13 to the deoxygenation pipe 2 and then to the exhaust device 4, and is discharged under the action of the exhaust device 4.

[0044] The oxygen detection device 3 is used to detect the oxygen concentration. For example, after deoxygenation has been carried out for a period of time, the oxygen detection device 3 starts to work. The gas in the process chamber 11 flows to the oxygen detection device 3 through the deoxygenation pipe 2. The oxygen detection device 3 detects the oxygen concentration of the gas to determine whether the oxygen concentration in the process chamber 11 meets the requirements.

[0045] The oxygen detection device 3 may include an oxygen detection pipeline 31, a switching ball valve 32, and an oxygen sensor 36. The oxygen detection pipeline 31 includes a first pipeline 311, a second pipeline 312, and a third pipeline 313. The first pipeline 311, the second pipeline 312, and the third pipeline 313 are arranged in parallel and are each connected to the deoxygenation pipeline 2 and the switching ball valve 32, respectively. That is, the first pipeline 311, the second pipeline 312, and the third pipeline 313 are arranged independently of each other. The two ends of the first pipeline 311 are connected to the deoxygenation pipeline 2 and the switching ball valve 32, respectively. The two ends of the second pipeline 312 are connected to the deoxygenation pipeline 2 and the switching ball valve 32, respectively. The two ends of the third pipeline 313 are connected to the deoxygenation pipeline 2 and the switching ball valve 32, respectively. The oxygen sensor 36 is installed on the third pipeline 313 and is used to detect the oxygen concentration in the process chamber 11. The switching ball valve 32 is connected to the first pipeline 311, the second pipeline 312 and the third pipeline 313 respectively, so as to control the on and off of the first pipeline 311, the second pipeline 312 and the third pipeline 313.

[0046] In the gas flow direction of the deoxygenation pipeline 2, the first pipeline 311, the second pipeline 312, and the third pipeline 313 are connected to the deoxygenation pipeline 2 in sequence. That is, in the deoxygenation stage, in the gas flow direction of the deoxygenation pipeline 2, the connection interface between the deoxygenation pipeline 2 and the first pipeline 311 is located upstream of the connection interface between the deoxygenation pipeline 2 and the second pipeline 312, and the connection interface between the deoxygenation pipeline 2 and the second pipeline 312 is located upstream of the connection interface between the deoxygenation pipeline 2 and the third pipeline 313. The gas in the deoxygenation pipeline 2 flows sequentially through the interface between the deoxygenation pipeline 2 and the first pipeline 311, the interface between the deoxygenation pipeline 2 and the second pipeline 312, and the interface between the deoxygenation pipeline 2 and the second pipeline 312.

[0047] The switching ball valve 32 is configured such that: during the deoxygenation stage, the switching ball valve 32 connects the first pipeline 311 and the second pipeline 312, and blocks the third pipeline 313, so that the third pipeline 313 is not connected to either the first pipeline 311 or the second pipeline 312, and the mixed gas in the first pipeline 311 does not flow to the third pipeline 313, while the high-oxygen-concentration mixed gas flowing from the deoxygenation pipeline 2 to the first pipeline 311 flows to the second pipeline 312 through the switching ball valve 32; during the oxygen detection stage, the switching ball valve 32 connects the first pipeline 311 and the third pipeline 313, while the second pipeline 313 is not connected to either the first pipeline 313 or the third pipeline 313, and the gas flowing from the deoxygenation pipeline 2 to the first pipeline 311 flows to the third pipeline 313 through the switching ball valve 32.

[0048] Specifically, during the deoxygenation stage, the mixed gas in the process chamber 1 is discharged through the deoxygenation pipe 2. Since the first pipe 311 is connected to the deoxygenation pipe 2, the mixed gas inevitably flows into the first pipe 311. The first pipe 311 and the second pipe 312 are connected through the switching ball valve 32. Thus, the mixed gas entering the first pipe 311 can flow to the second pipe 312 through the switching ball valve 32 and then to the deoxygenation pipe 2 for discharge. This not only discharges the high oxygen concentration mixed gas in the first pipe 311, but also prevents the high oxygen concentration mixed gas in the first pipe 311 from flowing to the oxygen sensor 36 in the third pipe 313 during the oxygen detection stage. This avoids the high oxygen concentration mixed gas remaining in the oxygen detection pipe 31 from flowing to the oxygen sensor 36 and causing the machine to issue an alarm, and also avoids the high oxygen concentration mixed gas from contacting the oxygen sensor 36 and causing it to age, thus improving the service life of the oxygen sensor 36.

[0049] During the oxygen detection phase, after a period of deoxygenated gas flow, the oxygen concentration in the process chamber 11 decreases. The first pipeline 311 and the third pipeline 313 are connected by the switching ball valve 32. This allows the gas in the process chamber 11 to flow to the deoxygenation pipeline 2 and then through the first pipeline 311 to the oxygen sensor 36 in the third pipeline 313. Thus, the oxygen sensor 36 can accurately detect the oxygen concentration in the process chamber 11. The third pipeline 313 is connected to the deoxygenation pipeline 2, allowing the gas to flow back to the deoxygenation pipeline 2 for discharge. This not only ensures accurate detection of the oxygen concentration in the process chamber 11 but also prevents the machine from issuing an alarm due to excessively high oxygen concentration.

[0050] Therefore, according to the semiconductor device 100 of the present invention, by providing a second pipeline 312 and a switching ball valve 32 connected to the first pipeline 311, the second pipeline 312 and the third pipeline 313 respectively, the switching ball valve 32 is controlled to connect different pipelines in the deoxygenation stage and the oxygen detection stage. This allows the high oxygen concentration gas remaining in the oxygen detection pipeline 31 during the deoxygenation stage to be discharged, preventing the high oxygen concentration gas remaining in the oxygen detection stage from flowing to the oxygen sensor 36 and causing inaccurate oxygen concentration detection and alarm. It also prevents the high oxygen concentration gas from flowing through the oxygen sensor 36 and accelerating the aging of the oxygen sensor 36.

[0051] In some embodiments of the present invention, the oxygen detection line 31 further includes a fourth line 314, which is connected to the switching ball valve 32 and the deoxygenation gas supply device respectively. The switching ball valve 32 is configured such that: during the deoxygenation stage, the switching ball valve 32 connects the third line 313 and the fourth line 314; during the oxygen detection stage, the switching ball valve 32 blocks the fourth line 314, and the fourth line 314 is not open.

[0052] Specifically, one end of the fourth pipeline 314 is connected to the switching ball valve 32 and the other end is connected to the deoxygenated gas supply device. The deoxygenated gas supply device can supply deoxygenated gas to the fourth pipeline 314. During the deoxygenation stage, the fourth pipeline 314 and the third pipeline 313 are connected through the switching ball valve 32. The deoxygenated gas flows to the oxygen sensor 36 of the third pipeline 313 through the switching ball valve 32, and then flows to the deoxygenated pipeline 2 through the third pipeline 313 for discharge. In this way, the switching ball valve 32 can not only pass deoxygenated gas to the oxygen sensor 36 to prevent it from issuing alarms and aging, but also the deoxygenated gas can also discharge the mixed gas that has entered the third pipeline 313.

[0053] Among them, such as Figure 1 As shown, the oxygen sensor 36 can be located at the end of the third pipeline 313 connected to the switching ball valve 32 and adjacent to the switching ball valve 32. This not only makes the structure more compact, but also reduces the length of the oxygen detection pipeline 31, reduces costs, and reduces gas residue in the third pipeline 313.

[0054] In some embodiments of the present invention, the switching ball valve 32 includes a switching valve body 321 and a switching valve core 323. The switching valve body 321 is provided with four valve ports, and a first pipeline 311, a second pipeline 312, a third pipeline 313, and a fourth pipeline 314 are respectively connected to the four valve ports. The switching valve core 323 is rotatably disposed in the switching valve body 321 between a first position and a second position. When the switching valve core 323 is in the first position, the valve port 315 connected to the first pipeline 311 is connected to the valve port 316 connected to the second pipeline 312, and the valve port 317 connected to the third pipeline 313 and the valve port 318 connected to the fourth pipeline 314 are connected. When the valve core 323 is in the second position, the valve port 315 connected to the first pipeline 311 is connected to the valve port 317 connected to the third pipeline 313. Therefore, during the deoxygenation stage, the switching valve core 323 rotates to the first position, connecting the first pipeline 311 and the second pipeline 312, and connecting the third pipeline 313 and the fourth pipeline 314. During the oxygen detection stage, the switching device rotates to the second position, connecting the first pipeline 311 and the third pipeline 313. At this time, for the second pipeline 312 and the fourth pipeline 314, the second pipeline 312 can be connected to the fourth pipeline 314 to allow the deoxygenated gas to flow to the deoxygenation pipeline 2 via the fourth pipeline 314 and the second pipeline 312. Preferably, the second pipeline 312 and the fourth pipeline 314 are not connected, that is, the valve core 323 can block the valve port 316 connected to the second pipeline 312 and the valve port 318 connected to the fourth pipeline 314, reducing the waste of deoxygenated gas.

[0055] Specifically, in combination Figures 2-5As shown, a spherical valve cavity 322 can be defined within the switching valve body 321. The switching valve core 323 is rotatably disposed within the spherical valve cavity 322. Four valve ports are evenly distributed on the switching valve body 321. Furthermore, on the cross-section of the switching valve body 321 passing through the center of the sphere, the four valve ports can be evenly spaced along the axial direction of the cross-section. In this way, the rotation of the switching valve core 323 can realize the conduction of the four valve ports in different stages as needed.

[0056] Optionally, combined Figure 2 and Figure 3 As shown, a first channel 324 may be provided inside the switching valve core 323. Specifically, the first channel 324 is formed inside the switching valve core 323 and extends through the valve core 323 in the radial direction. Figure 2 When the switching valve core 323 is in the first position, the first channel 324 is blocked by the side wall of the switching valve body 321. At this time, the adjacent valve ports are connected, that is, the valve port 315 connected to the first pipeline 311 and the valve port 316 connected to the second pipeline 312 are connected, and the valve port 317 connected to the third pipeline 313 and the valve port 318 connected to the fourth pipeline 314 are connected. Figure 3 In the second position, when the switching valve core 323 is in the switching valve core 323, it rotates to the position between the valve port 315 connecting the first pipeline 311 and the valve port 317 connecting the third pipeline 313. Both ends of the first channel 324 are connected to the valve port 315 connecting the first pipeline 311 and the valve port 317 connecting the third pipeline 313, respectively, thus enabling the connection between the first pipeline 311 and the second pipeline 312. Simultaneously, the valve core 323 can block the valve port 316 connecting the second pipeline 312 and the valve port 318 connecting the fourth pipeline 314, preventing the connection between the second pipeline 312 and the fourth pipeline 314. Figure 2 and Figure 3 In the example shown, the switching valve core 323 can be formed into a double-plate structure, and only the first channel 324 is formed in the switching valve core 323.

[0057] In other examples of the invention, combined with Figure 4 and Figure 5 As shown, the switching valve core 323 is also provided with a second channel 325 and a third channel 326. Figure 4When the switching valve core 323 is in the first position, the second channel 325 connects the valve port 315 of the first pipeline 311 and the valve port 316 of the second pipeline 312, and the third channel 326 connects the valve port 317 of the third pipeline 313 and the valve port 318 of the fourth pipeline 314. That is, the switching valve core 323 can form the first channel 324, the second channel 325 and the third channel 326. When the switching valve core 323 is in the first position, the two ends of the first channel 324 are blocked by the side wall of the switching valve body 321, the second channel 325 connects the valve port 315 of the first pipeline 311 and the valve port 316 of the second pipeline 312, and the third channel 326 connects the valve port 317 of the third pipeline 313 and the valve port 318 of the fourth pipeline 314. Figure 5 In the second position, when the switching valve core 323 is in the second channel side, the side wall of the switching valve core 323 on the second channel side blocks the second pipe 312, and the side wall of the switching valve core 323 on the third channel side blocks the fourth pipe 314. Thus, the valve port 315 connecting the first pipe 311 and the valve port 317 connecting the third pipe 313 are connected through the first channel 324. Both ends of the second channel 325 and the third channel 326 are blocked by the side wall of the switching valve core 323. Simultaneously, the valve port 316 connecting the second pipe 312 and the valve port 318 connecting the fourth pipe 314 are blocked by the switching valve core 323 and cannot be connected. The switching valve core 323 can be formed as a sphere to cooperate with the switching valve body 321, thereby facilitating the formation of the first channel 324, the second channel 325, and the third channel 326 within the switching valve core 323.

[0058] Optionally, the switching ball valve 32 may further include a valve shaft and a drive device. The valve shaft is connected to the switching valve core 323, and the drive device drives the valve shaft to move the switching valve body 321. Specifically, the drive device is located outside the switching valve body 321 and is connected to the switching valve body 321 via the valve shaft. In this way, the drive device drives the valve shaft to rotate, thereby driving the switching valve body 321 to move and providing a power source for the movement of the switching valve body 321. The structure is simple and does not require manual control. Of course, it is understood that the switching ball valve 32 may also not have a drive device, and the switching valve body 321 can move between the first and second positions by manually rotating the valve shaft.

[0059] Regarding the inner diameters of the switching valve body 321 and the oxygen detection line 31, the maximum inner diameter of the switching valve body 321 can be 1.5-3 times the maximum inner diameter of the oxygen detection line 31. Preferably, the maximum inner diameter of the switching valve body 321 can be twice the maximum inner diameter of the oxygen detection line 31, thereby facilitating the connection between the switching ball valve 32 and the oxygen detection line 31 and the flow of gas. Further, the inner diameters of the first line 311, the second line 312, the third line 313, and the fourth line 314 can be the same, and the switching valve body 321 is formed as a sphere, with its inner diameter being 1.5-3 times the inner diameter of the oxygen detection line 31.

[0060] Regarding the materials of the switching ball valve 32, the switching valve core 323 and the switching valve body 321 can be made of corrosion-resistant materials, thereby reducing the erosion of the switching valve core 323 and the switching valve body 321 by the flowing gas, extending the service life of the switching ball valve 32, and thus extending the service life of the semiconductor device 100 and reducing maintenance costs.

[0061] In some embodiments of the present invention, such as Figure 1 As shown, the semiconductor device 100 also includes a first control valve 33 disposed on the first pipeline 311, a second control valve 34 disposed on the second pipeline 312, and a fourth control valve 35 disposed on the fourth pipeline 314. Therefore, the first control valve 33 can control the opening and closing of the first pipeline 311, the second control valve 34 can control the opening and closing of the second pipeline 312, and the fourth control valve 35 can control the opening and closing of the third pipeline 313. For example, in the initial stage of deoxygenation, the first control valve 33, the second control valve 34, and the fourth control valve 35 can be closed. In this way, the deoxygenating gas can directly discharge the gas with high oxygen concentration in the process chamber 1 and the gas mixed with the deoxygenating gas from the deoxygenation channel. This is efficient and can reduce the waste of deoxygenating gas. It can also prevent the gas in the oxygen detection pipeline 31 from flowing to the oxygen sensor 36. In the later stage of deoxygenation and before the oxygen detection stage, the first control valve 33, the second control valve 34, and the fourth control valve 35 can be opened. In this way, the first pipeline 311, the second pipeline 312, the third pipeline 313, and the fourth pipeline 314 are connected through the switching ball valve 32, and the gas can flow between the first pipeline 311, the second pipeline 312, the third pipeline 313, and the fourth pipeline 314.

[0062] Optionally, such as Figure 1As shown, the first control valve 33, the second control valve 34, and the fourth control valve 35 are all located adjacent to the switching ball valve 32. The first control valve 33, the second control valve 34, and the fourth control valve 35 are backflow preventers. This prevents gas backflow in the pipeline. For example, when the first pipeline 311 and the second pipeline 312 are connected, the first control valve 33 and the second control valve 34 allow only the gas from the deoxygenation pipeline 2 to flow from the first pipeline 311 to the second pipeline 312 and then to the deoxygenation pipeline 2, thus discharging the residual high-oxygen concentration gas in the first pipeline 311 and the second pipeline 312 and preventing gas backflow along the second pipeline 312 and the first pipeline 311. Furthermore, if the fourth pipeline 314 is equipped with the fourth control valve 35, it can also prevent gas backflow from contaminating the deoxygenated gas.

[0063] The present invention also proposes a method for removing oxygen from semiconductor devices.

[0064] A method for removing oxygen from a semiconductor device according to an embodiment of the present invention is described below with reference to the accompanying drawings. This method is applicable to the semiconductor device 100 described above.

[0065] like Figure 1 As shown, the semiconductor device may include a process chamber 1, an oxygen removal pipeline 2, and an oxygen detection device 3. The process chamber 1 has an oxygen removal inlet 12 and an oxygen removal outlet 13. The process chamber 1 is a reaction chamber for high-temperature heat treatment processes of semiconductors. The high-temperature heat treatment process is carried out in the process chamber 1 and has very high requirements for the oxygen concentration in the process chamber 1. In order to meet the oxygen concentration requirements of the process, a large amount of oxygen removal gas (e.g., nitrogen) is introduced before high-temperature processing to remove oxygen in the process chamber 11 so that the oxygen concentration meets the standard.

[0066] The oxygen detection device 3 is used to detect the oxygen concentration. For example, after deoxygenation has been carried out for a period of time, the oxygen detection device 3 starts to work. The gas in the process chamber 11 flows to the oxygen detection device 3 through the deoxygenation pipe 2. The oxygen detection device 3 detects the oxygen concentration of the gas to determine whether the oxygen concentration in the process chamber 11 meets the requirements.

[0067] The oxygen detection device 3 may include an oxygen detection pipeline 31, a switching ball valve 32, and an oxygen sensor 36. The oxygen detection pipeline 31 includes a first pipeline 311, a second pipeline 312, and a third pipeline 313, which are arranged in parallel and are respectively connected to the deoxygenation pipeline 2 and the switching ball valve 32. The oxygen sensor 36 is installed on the third pipeline 313 for detecting the oxygen concentration. The switching ball valve 32 is connected to the first pipeline 311, the second pipeline 312, and the third pipeline 313 to control the on / off state of the first pipeline 311, the second pipeline 312, and the third pipeline 313.

[0068] In the gas flow direction of deaeration pipeline 2, the first pipeline 311, the second pipeline 312, and the third pipeline 313 are connected to deaeration pipeline 2 in sequence, such as... Figure 1 As shown, the connection interface between the deoxygenation pipe 2 and the first pipe 311 is located upstream of the connection interface between the deoxygenation pipe 2 and the second pipe 312, and the connection interface between the deoxygenation pipe 2 and the second pipe 312 is located upstream of the connection interface between the deoxygenation pipe 2 and the third pipe 313. The gas in the deoxygenation pipe 2 flows sequentially through the interface between the deoxygenation pipe 2 and the first pipe 311, the interface between the deoxygenation pipe 2 and the second pipe 312, and the interface between the deoxygenation pipe 2 and the second pipe 312.

[0069] The switching ball valve 32 is configured such that, during the deoxygenation stage, the switching ball valve 32 connects the first pipeline 311 and the second pipeline 312 and blocks the third pipeline 313; during the oxygen detection stage, the switching ball valve 32 connects the first pipeline 311 and the third pipeline 313, and the third pipeline 313 is connected to the deoxygenation pipeline 2, so that the gas can flow back to the deoxygenation pipeline 2 for discharge. This not only accurately detects the oxygen concentration in the process body 1, but also avoids the machine from issuing an alarm due to excessively high oxygen concentration.

[0070] like Figure 6 As shown, the deoxygenation method includes the following steps: S1: introducing deoxygenating gas into the process chamber 1 of the semiconductor device 100; in this way, in the initial stage of deoxygenation, introducing deoxygenating gas into the process chamber 1 can remove the high concentration of oxygen in the process chamber 1. For the deoxygenating gas, the deoxygenating gas can be nitrogen.

[0071] S2: After the deoxygenated gas is introduced into the process chamber 1 for a first preset time, the switching ball valve 3 is adjusted to connect the first pipeline 311 and the second pipeline 312. The oxygen sensor 36 is in the closed state, and the deoxygenated gas is continuously introduced into the process chamber 1. S3: After the deoxygenated gas is continuously introduced into the process chamber 1 for a second preset time, the switching ball valve 3 is adjusted to connect the first pipeline 311 and the third pipeline 313, and the oxygen sensor 36 is opened.

[0072] Specifically, in the initial stage of deoxygenation, deoxygenating gas is introduced into the process chamber 1 to remove oxygen from it. The gas introduction time is timed. When the deoxygenating gas has been introduced into the process chamber 1 for a first preset time, the oxygen content in the process chamber 1 decreases. To meet the process requirements for oxygen concentration, it is necessary to detect whether the oxygen concentration in the process chamber 1 meets the requirements. Since a portion of the high-concentration oxygen mixture enters the oxygen detection line 31 in the initial stage of deoxygenation, to ensure the accuracy of oxygen detection, the high-concentration oxygen in the line upstream of the oxygen sensor 36 needs to be discharged before proceeding. The oxygen sensor 36 is shut off during the detection process, and deoxygenated gas is continuously introduced into the process chamber 1. By adjusting the switching ball valve 3 to connect the first pipeline 311 and the third pipeline 313, the high oxygen concentration gas in the first pipeline 311 flows to the deoxygenated pipeline 2 through the switching ball valve 3 and the second pipeline 312, thereby venting the high oxygen concentration gas from the first pipeline 311. At the same time, the high oxygen concentration gas does not flow through the oxygen sensor 36, which can also prevent the machine from issuing an alarm due to the high oxygen concentration detected by the oxygen sensor 36 in the early stage of detection, and can also prevent the oxygen sensor 36 from aging due to prolonged exposure to high oxygen concentration.

[0073] When the deoxygenated gas is continuously introduced for a second preset time, the high-oxygen-concentration gas in the first pipeline 311 is discharged. At this time, the gas in the first pipeline 311 is the same as the gas in the process chamber 1. Then, the switching ball valve 3 is adjusted to connect the first pipeline 311 and the third pipeline 313 while blocking the second pipeline 312. In this way, the gas in the process chamber 1 flows through the first pipeline 311 to the third pipeline 313 and passes through the oxygen sensor 36. The oxygen sensor 36 detects the oxygen concentration of the flowing gas to determine whether the oxygen concentration in the process chamber 1 meets the requirements. It should be noted that the second preset time can be started from the initial introduction of deoxygenated gas or from the adjustment of the switching ball valve 3 to connect the first pipeline 311 and the second pipeline 312. The setting and timing method of the second preset time can be set according to the actual situation, and the present invention does not impose any special limitations on this.

[0074] Therefore, the oxygen removal method for semiconductor devices according to embodiments of the present invention can improve the accuracy of oxygen detection, avoid alarms caused by inaccurate oxygen concentration detection, and reduce equipment aging problems caused by prolonged exposure to high oxygen concentration gases.

[0075] Optionally, the oxygen detection line 31 further includes a fourth line 314 connected to the switching ball valve 3 and the deoxygenated gas supply device. The step of adjusting the switching ball valve 323 to connect the first line 311 and the second line 312 includes: adjusting the switching ball valve 323 to connect the first line 311 and the second line 312 and to connect the third line 313 and the fourth line 314; the step of adjusting the switching ball valve 323 to connect the first line 311 and the third line 313 includes: connecting the first line 311 and the third line 313 and blocking the second line 312 and the fourth line 314. Thus, during the deoxygenation stage, the high-oxygen-concentration gas in the first pipeline 311 is discharged through the second pipeline 312, while deoxygenated gas is introduced into the third pipeline 313 and the oxygen sensor 36 through the fourth pipeline 314. During the oxygen detection stage, the gas in the process chamber 1 flows through the first pipeline 311 to the third pipeline 313, and the oxygen sensor 36 detects the flowing gas to determine whether the oxygen concentration in the process chamber 1 meets the requirements. At the same time, the second pipeline 312 and the fourth pipeline 314 are closed.

[0076] Furthermore, the semiconductor device 100 also includes a first control valve 33 disposed on the first pipeline 311, a second control valve 34 disposed on the second pipeline 312, and a fourth control valve 35 disposed on the fourth pipeline 314. After adjusting the switching ball valve 323 to connect the first pipeline 311 and the second pipeline 312, the device further includes the following steps: opening the first control valve 33, the second control valve 34, and the fourth control valve 35. Before adjusting the switching ball valve 323 to connect the first pipeline 311 and the third pipeline 313, the device further includes the following steps: opening the first control valve 33 and closing the second control valve 34 and the fourth control valve 35. In this way, the closing and opening of the first pipeline 311, the second pipeline 312, and the fourth pipeline 314 can be controlled by controlling the first control valve 33, the second control valve 34, and the fourth control valve 35, which is simple in structure and convenient in control.

[0077] Furthermore, before adjusting the switching ball valve 323, connecting the first pipeline 311 and the second pipeline 312, and connecting the third pipeline 313 and the fourth pipeline 314, and simultaneously opening the oxygen sensor 36, the following steps are also included: introducing deoxygenated gas into the fourth pipeline 314 through the deoxygenated gas supply device. In this way, the deoxygenated gas can flow through the fourth pipeline 314 to the third pipeline 313 and through the oxygen sensor 36. Thus, the oxygen sensor 36 can be further protected by introducing deoxygenated gas, and the high oxygen concentration gas remaining in the third pipeline 313 can also be removed.

[0078] The above are merely preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A semiconductor device, characterized in that, include: A process chamber having an oxygen deoxygenation inlet and an oxygen deoxygenation outlet; A deoxygenation pipeline, which is connected to the deoxygenation outlet and the exhaust device respectively; An oxygen detection device includes an oxygen detection pipeline, a switching ball valve, and an oxygen sensor. The oxygen detection pipeline includes a first pipeline, a second pipeline, a third pipeline, and a fourth pipeline. The first pipeline, the second pipeline, and the third pipeline are arranged in parallel and are respectively connected to the deoxygenation pipeline and the switching ball valve. The first pipeline, the second pipeline, and the third pipeline are sequentially connected to the deoxygenation pipeline in the gas flow direction. The oxygen sensor is located on the third pipeline. The fourth pipeline is connected to the switching ball valve and the deoxygenation gas supply device. The switching ball valve is configured such that: during the deoxygenation stage, the switching ball valve connects the first pipeline and the second pipeline and also connects the third pipeline and the fourth pipeline; during the oxygen detection stage, the switching ball valve connects the first pipeline and the third pipeline and blocks the fourth pipeline. The switching ball valve includes a switching valve body and a switching valve core. The switching valve body has four valve ports. The switching valve core is rotatably disposed in the switching valve body between a first position and a second position. The first pipeline, the second pipeline, the third pipeline and the fourth pipeline are respectively connected to the four valve ports one by one. When the switching valve core is in the first position, the valve port connected to the first pipeline is connected to the valve port connected to the second pipeline, and the valve port connected to the third pipeline is connected to the valve port connected to the fourth pipeline; when the valve core is in the second position, the valve port connected to the first pipeline is connected to the valve port connected to the third pipeline.

2. The semiconductor device according to claim 1, characterized in that, The switching valve core has a first channel. When the switching valve core is in the second position, the valve port connected to the first pipeline and the valve port connected to the third pipeline are connected through the first channel.

3. The semiconductor device according to claim 2, characterized in that, The switching valve core is provided with a second channel and a third channel; when the switching valve core is in the first position, the second channel connects the valve port connected to the first pipeline and the valve port connected to the second pipeline, and the third channel connects the valve port connected to the third pipeline and the valve port connected to the fourth pipeline; when the switching valve core is in the second position, the switching valve core sidewall located on the second channel side blocks the second pipeline, and the switching valve core sidewall located on the third channel side blocks the fourth pipeline.

4. The semiconductor device according to claim 1, characterized in that, The maximum inner diameter of the switching valve body is 1.5-3 times the maximum inner diameter of the oxygen detection pipeline.

5. The semiconductor device according to claim 1, characterized in that, The switching ball valve also includes a valve shaft and a drive device. The valve shaft is connected to the switching valve core, and the drive device drives the valve shaft to move the switching valve body.

6. The semiconductor device according to claim 1, characterized in that, The switching valve core and the switching valve body are made of corrosion-resistant materials.

7. The semiconductor device according to claim 1, characterized in that, It also includes a first control valve installed on the first pipeline, a second control valve installed on the second pipeline, and a fourth control valve installed on the fourth pipeline.

8. The semiconductor device according to claim 7, characterized in that, The first control valve, the second control valve, and the fourth control valve are all backflow preventers.

9. The semiconductor device according to claim 7, characterized in that, The first control valve, the second control valve, and the fourth control valve are all located adjacent to the switching ball valve.

10. The semiconductor device according to claim 1, characterized in that, The oxygen sensor is located at the end of the third pipeline connected to the switching ball valve and adjacent to the switching ball valve.

11. A method for removing oxygen from a semiconductor device, characterized in that, Applied to a semiconductor device as described in any one of claims 1-10, the oxygen removal method comprises: Oxygen-removing gas is introduced into the process chamber of the semiconductor device; After the deoxygenated gas is introduced into the process chamber for a first preset time, the switching ball valve is adjusted to connect the first pipeline and the second pipeline, as well as the third pipeline and the fourth pipeline. The oxygen sensor is in an off state, and the deoxygenated gas is continuously introduced into the process chamber. After the oxygen-removing gas is continuously introduced into the process chamber for a second preset time, the switching ball valve is adjusted to connect the first pipeline and the third pipeline while blocking the second pipeline and the fourth pipeline, and the oxygen sensor is turned on at the same time.

12. The method for deoxygenating a semiconductor device according to claim 11, characterized in that, The semiconductor device further includes a first control valve disposed on the first pipeline, a second control valve disposed on the second pipeline, and a fourth control valve disposed on the fourth pipeline. After adjusting the switching ball valve to connect the first pipeline and the second pipeline, it further includes: Open the first control valve, the second control valve, and the fourth control valve; Before adjusting the switching ball valve to connect the first pipeline and the third pipeline, the method further includes: opening the first control valve and closing the second control valve and the fourth control valve.

13. The method for deoxygenating a semiconductor device according to claim 11, characterized in that, Before adjusting the switching ball valve, connecting the first pipeline and the second pipeline, and connecting the third pipeline and the fourth pipeline, and simultaneously opening the oxygen sensor, the procedure further includes: Deoxygenated gas is supplied to the fourth pipeline through the deoxygenated gas supply device.

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