Display device

By setting barriers on the circuit board and aligning them with the connectors, the laser shields and protects the circuit board, solving the problem of circuit board damage caused by laser removal of misaligned bare cores, and improving the production yield and reliability of display devices.

CN113964107BActive Publication Date: 2026-02-06AU OPTRONICS CORP
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Patent Information

Application Number
CN202111191568.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2021-03-23
Filing Date
2021-10-13
Publication Date
2026-02-06
Estimated Expiration
2041-10-13

AI Technical Summary

Technical Problem

During the mass transfer process of micro LED display devices, laser removal of misaligned bare cores often leads to damage to the circuit board, affecting production yield and reliability.

Method used

A barrier is placed on the circuit board, with its side aligned with the connector to shield the laser and protect the board. The barrier is between 1 μm and 2 μm high and does not contact the light-emitting element. An opening is provided in the connector area to ensure accurate removal of misaligned elements.

Benefits of technology

This effectively avoids laser damage to the circuit board, improving the production yield and reliability of the display device.

✦ Generated by Eureka AI based on patent content.

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Abstract

A display device includes a circuit substrate, a barrier, a first contact pad, a second contact pad, a light emitting element, a first connecting member, and a second connecting member. The barrier is on the circuit substrate and has opposite first and second sides and opposite third and fourth sides. The first contact pad is on the circuit substrate and is adjacent to the first side of the barrier. The second contact pad is on the circuit substrate and is adjacent to the second side of the barrier. The light emitting element is on the barrier, the first contact pad, and the second contact pad and includes a first electrode and a second electrode. The first connecting member connects the first electrode and the first contact pad. The second connecting member connects the second electrode and the second contact pad. The third and fourth sides of the barrier are aligned with sides of the first and second connecting members.
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Description

TECHNICAL FIELD

[0001] The present application relates to a display device, and particularly relates to a display device capable of avoiding laser damage to a circuit substrate. BACKGROUND

[0002] A micro light emitting diode (Micro-LED) display device has advantages of power saving, high efficiency, high brightness, and fast reaction time. Since the size of the micro light emitting diode is extremely small, a current method for manufacturing the micro light emitting diode display device is to use a mass transfer technology, that is, to use a micro electro mechanical array technology to pick and place micro light emitting diode dies so as to transport a large number of micro light emitting diode dies to a circuit substrate at one time.

[0003] However, the mass transfer technology still often has the problem of die misalignment. A current method is to use a laser to remove misaligned micro light emitting diode dies and then to re-implant the dies to repair. However, when the laser is used to remove the misaligned micro light emitting diode dies, the circuit substrate is often damaged by the laser, resulting in poor production yield or reliability of the display device. SUMMARY

[0004] The present application provides a display device capable of avoiding laser damage to a circuit substrate.

[0005] One embodiment of the present application provides a display device, comprising: a circuit substrate; a barrier on the circuit substrate and having opposite first and second sides and opposite third and fourth sides; a first contact pad on the circuit substrate and adjacent to the first side of the barrier; a second contact pad on the circuit substrate and adjacent to the second side of the barrier; a light emitting element on the barrier, the first contact pad and the second contact pad and comprising a first electrode and a second electrode; a first connecting member connecting the first electrode and the first contact pad; and a second connecting member connecting the second electrode and the second contact pad, wherein the third and fourth sides of the barrier are aligned with sides of the first and second connecting members.

[0006] In one embodiment of the present application, the first and second contact pads are tightly attached to the barrier.

[0007] In one embodiment of the present application, a top surface of the barrier is not higher than a top surface of the first or second connecting member.

[0008] In one embodiment of the present application, a height of the barrier is between 1 μm and 2 μm.

[0009] In one embodiment of the present application, the barrier does not contact the light emitting element.

[0010] In an embodiment of the present application, the first connecting member and the second connecting member are located on the same layer of the circuit substrate.

[0011] In an embodiment of the present application, the barrier is sandwiched between the first connecting member and the second connecting member.

[0012] In an embodiment of the present application, the first connecting member and the second connecting member comprise metal or conductive glue.

[0013] In an embodiment of the present application, the display device further comprises an insulating layer between the first contact pad and the second contact pad and the circuit substrate, and the barrier and the insulating layer belong to the same film layer.

[0014] In an embodiment of the present application, the circuit substrate comprises an active element, and the active element is electrically connected to the first contact pad or the second contact pad.

[0015] In an embodiment of the present application, the barrier has an opening, and the distance between the opening and the third side of the barrier and the distance between the opening and the fourth side of the barrier are greater than or equal to 3 μm.

[0016] In an embodiment of the present application, the opening has an aperture in a direction perpendicular to the third side or the fourth side of between 8 μm and 12 μm.

[0017] In an embodiment of the present application, the opening divides the barrier into a first part and a second part, and the first part has the third side and the second part has the fourth side.

[0018] In an embodiment of the present application, the first part and the second part are separated.

[0019] In an embodiment of the present application, the first part and the second part have a width in a direction perpendicular to the third side or the fourth side of between 3 μm and 5 μm.

[0020] In order to make the above features and advantages of the present application more apparent and easy to understand, the following embodiments are described in detail below, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS

[0021] FIG. 1A is a top view of a display device 10 of an embodiment of the present application;

[0022] FIG. 1B is a top view of a display device 10 of an embodiment of the present application; FIG. 1A is an enlarged view of a region I of the display device 10 of

[0023] FIG. 1C is a top view of a display device 10 of an embodiment of the present application; FIG. 1Ba cross-sectional view taken along the cross-sectional line A-A' of FIG. 1;

[0024] FIG. 1D a cross-sectional view taken along the cross-sectional line B-B' of FIG. 2 and a schematic view of the relative position of the laser irradiation range; FIG. 1B

[0025] FIG. 1E a cross-sectional view taken along the cross-sectional line C-C' of FIG. 3 and a schematic view of the relative position of the laser irradiation range; FIG. 1B

[0026] FIG. 1F a cross-sectional view taken along the cross-sectional line D-D' of FIG. 4 and a schematic view of the relative position of the laser irradiation range; FIG. 1B

[0027] FIG. 1G a schematic view of the display device 10 of FIG. 1 after repair; FIG. 1A

[0028] FIG. 1H a cross-sectional view taken along the cross-sectional line E-E' of FIG. 5; FIG. 1G

[0029] FIG. 2A a schematic view of the display device 20 of FIG. 5 from above;

[0030] FIG. 2B a schematic view of the display device 20 of FIG. 5 before repair; FIG. 2A

[0031] FIG. 2C a cross-sectional view taken along the cross-sectional line F-F' of FIG. 6; FIG. 2B

[0032] a cross-sectional view taken along the cross-sectional line G-G' of FIG. 7 and a schematic view of the relative position of the laser irradiation range; FIG. 2D FIG. 2B a cross-sectional view taken along the cross-sectional line H-H' of FIG. 8 and a schematic view of the relative position of the laser irradiation range;

[0033] FIG. 2E FIG. 2B a cross-sectional view taken along the cross-sectional line J-J' of FIG. 9 and a schematic view of the relative position of the laser irradiation range.

[0034] FIG. 2F FIG. 2B

[0035] Explanation of symbols

[0036] 10, 20: display device

[0037] 110: circuit substrate​​​​​​​​​​

[0038] 112: bottom plate

[0039] 114: drive circuit layer

[0040] 120, 220: barrier

[0041] 120T: top surface

[0042] 121, 221: first side surface

[0043] 122, 222: second side surface

[0044] 123, 223: third side surface

[0045] 124, 224: fourth side surface

[0046] 130: first bonding pad

[0047] 140: second bonding pad

[0048] 150, 150a, 150b, 150c, 150d, 150e, 150f, 150g, 150h: light emitting element

[0049] 151: first electrode

[0050] 152: second electrode

[0051] 153: light emitting stack

[0052] 160: first connecting member

[0053] 161: first connecting material

[0054] 160T: top surface

[0055] 170: second connecting member

[0056] 171: second connecting material

[0057] 170T: top surface

[0058] 180: laser

[0059] 220a: first portion

[0060] 220b: second portion

[0061] A-A', B-B', C-C', D-D', E-E', F-F', G-G', H-H', J-J': cross-sectional line

[0062] CH: semiconductor layer

[0063] CT: color conversion layer

[0064] D1, D2, D3, D4: distance

[0065] DC: driving element

[0066] DE: drain

[0067] Dp: diameter

[0068] E1, E2, E3, E4: partial laser

[0069] GE: gate

[0070] H1: height

[0071] I, II: region

[0072] I1: buffer layer

[0073] I2: gate insulating layer

[0074] I3: interlayer insulating layer

[0075] I4: planar layer

[0076] I5: insulating layer

[0077] L: upper side connecting line

[0078] M: lower side connecting line

[0079] OP: opening

[0080] PXs: sub-pixel

[0081] S1, S2: interval

[0082] SE: source

[0083] T: active element

[0084] W1, W2: width DETAILED DESCRIPTION

[0085] FIG. 1A is a schematic view of the display device 10 according to an embodiment of the present application. FIG. 1B is FIG. 1A is a schematic view of the region I of the display device 10 before repair. FIG. 1C is a schematic view of the cross section along the cross section line A-A' of FIG. 1B FIG. 1D is a schematic view of the cross section along the cross section line B-B' of FIG. 1B FIG. 1E is a schematic view of the cross section along the cross section line C-C' of FIG. 1B FIG. 1F is a schematic view of the cross section along the cross section line D-D' of​​​FIG. 1B A schematic diagram of the cross section line D-D' and a schematic diagram of the relative position of the laser irradiation range. FIG. 1G yes FIG. 1A An enlarged schematic diagram of area I of the display device 10 after repair. FIG. 1H It is along FIG. 1G A schematic cross-sectional view along section line E-E'. To make the accompanying drawing more concise, FIG. 1A The circuit board 110 and the light-emitting element 150 are schematically shown, and other components are omitted.

[0086] Please refer to FIGS. 1A-1C The display device 10 includes: a circuit board 110, a barrier 120, a first pad 130, a second pad 140, a light-emitting element 150, a first connector 160, and a second connector 170. The barrier 120 is located on the circuit board 110 and has opposing first side surfaces 121 and 122, and opposing third side surfaces 123 and 124. The first pad 130 is located on the circuit board 110 and adjacent to the first side surface 121 of the barrier 120. The second pad 140 is located on the circuit board 110 and adjacent to the second side surface 122 of the barrier 120. The light-emitting element 150 is located on the barrier 120, the first pad 130, and the second pad 140, and includes a first electrode 151 and a second electrode 152. The first connector 160 connects the first electrode 151 and the first pad 130. The second connector 170 connects the second electrode 152 and the second pad 140. The third side 123 and the fourth side 124 of the barrier 120 are aligned with the side of the first connector 160 and the side of the second connector 170.

[0087] In a display device 10 according to an embodiment of the present invention, when using a laser to remove a misaligned light-emitting element 150, the barrier 120 can prevent the laser from damaging the circuit board 110, thereby improving the production yield or reliability of the display device 10. Hereinafter, in conjunction with... FIGS. 1A-1H The embodiments of the various components of the display device 10 will be described further, but the present invention is not limited thereto.

[0088] In particular, the display device 10 can include a plurality of sub-pixels PXs arranged in an array. Each of the sub-pixels PXs can include a light emitting element 150. In some embodiments, the display device 10 can further include a driving element DC electrically connected to the sub-pixels PXs to deliver signals to the light emitting element 150. For example, the light emitting element 150 can be electrically connected to a first contact pad 130 and a second contact pad 140, and the driving element DC can be electrically connected to the first contact pad 130 and the second contact pad 140, respectively. In some embodiments, the first contact pads 130 of the plurality of sub-pixels PXs can be electrically isolated from each other and independently receive signals provided by the driving element DC. In some embodiments, the second contact pads 140 of the plurality of sub-pixels PXs can be electrically connected to each other and / or the second contact pads 140 can be applied with the same common voltage during operation. In some embodiments, the driving element DC can be a chip bonded to the circuit substrate 110 or a circuit element (including an active element, a passive (or non-active) element, or a combination thereof) directly formed in the circuit substrate 110.

[0089] Each of the sub-pixels PXs of the display device 10 can include, for example, the circuit substrate 110, the barrier 120, the first contact pad 130, the second contact pad 140, the light emitting element 150, the first connecting member 160, and the second connecting member 170. The barrier 120, the first contact pad 130, and the second contact pad 140 can be disposed on a surface of the circuit substrate 110, and the first electrode 151 of the light emitting element 150 can be electrically connected to the first contact pad 130 via the first connecting member 160, and the second electrode 152 of the light emitting element 150 can be electrically connected to the second contact pad 140 via the second connecting member 170.

[0090] In some embodiments, the circuit substrate 110 can include a base plate 112 and a driving circuit layer 114. The base plate 112 of the circuit substrate 110 can be a transparent substrate or a non-transparent substrate, and can be made of a quartz substrate, a glass substrate, a polymer substrate, or other suitable materials, but the present disclosure is not limited thereto. The driving circuit layer 114 can include elements or lines required by the display device 10, such as driving elements, switching elements, storage capacitors, power supply lines, driving signal lines, timing signal lines, current compensation lines, detection signal lines, and the like.

[0091] In some embodiments, the driving circuit layer 114 can be formed on the base plate 112 using a thin film deposition process, a photomask process, and an etching process, and can include an array of active elements, in which the array of active elements includes a plurality of active elements T arranged in an array.

[0092] In the present embodiment, the drive circuit layer 114 includes a buffer layer I1, an active element T, a gate insulating layer I2, an interlayer insulating layer I3, and a planar layer I4. In other embodiments, the drive circuit layer 114 can include more insulating layers and conductive layers as needed. The active element T is composed of a semiconductor layer CH, a gate electrode GE, a source electrode SE, and a drain electrode DE. The region of the semiconductor layer CH overlapping the gate electrode GE can be regarded as a channel region of the active element T. The gate insulating layer I2 is located between the gate electrode GE and the semiconductor layer CH, and the interlayer insulating layer I3 is disposed between the source electrode SE and the gate electrode GE and between the drain electrode DE and the gate electrode GE. The gate electrode GE and the source electrode SE can respectively receive signals from a drive element DC. The material of the semiconductor layer CH can include silicon-based semiconductor materials (e.g., polysilicon, amorphous silicon, etc.), oxide semiconductor materials, and organic semiconductor materials. The materials of the gate electrode GE, the source electrode SE, and the drain electrode DE can include metals with good conductivity, such as aluminum, molybdenum, titanium, copper, etc., but the present application is not limited thereto.

[0093] The insulating layer I5 can be formed on the drive circuit layer 114 using a thin film deposition process, a photomask process, and an etching process. In the present embodiment, the barrier 120 can belong to the same film layer as the insulating layer I5, but the present application is not limited thereto. In other embodiments, the barrier 120 can also be located on the insulating layer I5 and belong to a different film layer from the insulating layer I5.

[0094] The materials of the buffer layer I1, the gate insulating layer I2, the interlayer insulating layer I3, and the insulating layer I5 can include transparent insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, or a stack of the above materials, but the present application is not limited thereto. The material of the planar layer I4 can include transparent insulating materials, such as organic materials, acrylic materials, siloxane materials, polyimide materials, epoxy materials, etc., but the present application is not limited thereto. The buffer layer I1, the gate insulating layer I2, the interlayer insulating layer I3, the planar layer I4, and the insulating layer I5 can each have a single-layer structure or a multi-layer structure, such as a stack of any two or more of the above insulating materials, which can be combined and varied as needed.

[0095] After the barrier 120 and the insulating layer I5 are formed, a plurality of first contact pads 130 and a plurality of second contact pads 140 can be formed on the insulating layer I5 using a thin film deposition process, a photomask process, and an etching process, so that the insulating layer I5 is located between the plurality of first contact pads 130 and the plurality of second contact pads 140 and the circuit substrate 110. In the present embodiment, the second contact pads 140 are electrically connected to the active element T through the through holes in the insulating layer I5 and the planar layer I4, but the present application is not limited thereto. In other embodiments, the active element T can also be electrically connected to the first contact pads 130.

[0096] The first and second contact pads 130 and 140 can have a single layer structure or a structure of a plurality of conductive layers stacked. For example, the first and second contact pads 130 and 140 can have a structure of layers of aluminum, molybdenum, titanium, copper, or other metal and indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), or other suitable conductive oxide, but the present application is not limited thereto.

[0097] In the present embodiment, the first and second contact pads 130 and 140 are located on the insulating layer I5, and the first contact pad 130 is attached to or in close contact with the first side surface 121 of the barrier 120, and the second contact pad 140 is attached to or in close contact with the second side surface 122 of the barrier 120. In some embodiments, there is no gap between the barrier 120 and the first contact pad 130 or between the barrier 120 and the second contact pad 140. In this way, it can be ensured that the area between the barrier 120 and the first or second contact pad 130 or 140 is not damaged by laser.

[0098] In the present embodiment, the light emitting element 150 can include a first electrode 151, a second electrode 152, and a light emitting stack 153, and the first and second electrodes 151 and 152 are electrically connected to different layers in the light emitting stack 153, respectively. For example, the light emitting stack 153 can include two semiconductor layers and a light emitting layer sandwiched between the two semiconductor layers, and the first electrode 151 can be electrically connected to one of the two semiconductor layers, and the second electrode 152 can be electrically connected to the other of the two semiconductor layers. The materials of the first and second electrodes 151 and 152 can include metal, alloy, nitride of metal material, oxide of metal material, oxynitride of metal material, or other suitable materials or a stack of metal material and other conductive material or other low resistance material.

[0099] The light emitting element 150 is transferred to the circuit substrate 110 by a mass transfer process after being manufactured on a growth substrate, and the first and second electrodes 151 and 152 are electrically connected to the first and second contact pads 130 and 140 through the first and second connecting members 160 and 170, respectively. The materials of the first and second connecting members 160 and 170 are, for example, metal, conductive adhesive, or other materials. In addition, other conductive materials or conductive adhesive can be included between the first and second connecting members 160 and 170 and the first and second contact pads 130 and 140.

[0100] In this embodiment, the top surface 120T of the barrier 120 is not higher than the top surface 160T of the first connecting member 160 or the top surface 170T of the second connecting member 170, so as not to affect the junction of the first electrode 151 and the second electrode 152 with the first connecting member 160 and the second connecting member 170 during the process of the mass transfer fabrication process. In some embodiments, the top surface 120T of the barrier 120 is lower than the top surface 160T of the first connecting member 160 or the top surface 170T of the second connecting member 170, so that the barrier 120 does not contact the light emitting element 150. In some embodiments, since the depth of influence of the laser will not exceed 2 μm, the height H1 of the barrier 120 can be between 1 μm and 2 μm.

[0101] In this embodiment, the third side surface 123 of the barrier 120 is aligned with the side surface of the first connecting member 160 and the side surface of the second connecting member 170, and the fourth side surface 124 of the barrier 120 is also aligned with the side surface of the first connecting member 160 and the side surface of the second connecting member 170. That is, in the direction perpendicular to the third side surface 123 or the fourth side surface 124, the barrier 120 extends at least to the third side surface 123 and the fourth side surface 124 flush with the side surface of the first connecting member 160 and the side surface of the second connecting member 170.

[0102] In this embodiment, the orthographic projection of the first connecting member 160 on the circuit substrate 110 is located within the orthographic projection of the first contact pad 130 on the circuit substrate 110, and the orthographic projection of the second connecting member 170 on the circuit substrate 110 is located within the orthographic projection of the second contact pad 140 on the circuit substrate 110. In some embodiments, the first connecting member 160 can selectively adhere or abut the first side surface 121 of the barrier 120, and the second connecting member 170 can selectively adhere or abut the second side surface 122 of the barrier 120. In other embodiments, the first connecting member 160 and the second connecting member 170 can not contact the barrier 120. Therefore, the orthographic projection of the barrier 120 on the circuit substrate 110 can be located between the orthographic projection of the first connecting member 160 on the circuit substrate 110 and the orthographic projection of the second connecting member 170 on the circuit substrate 110. In some embodiments, when the first connecting member 160 adheres or abuts the first side surface 121 of the barrier 120, and the second connecting member 170 adheres or abuts the second side surface 122 of the barrier 120, the barrier 120 is sandwiched between the first connecting member 160 and the second connecting member 170.

[0103] In this embodiment, the light emitting element 150 can be removed by irradiating the configuration region of the first and second connecting members 160 and 170 and the region between the first and second connecting members 160 and 170 with the laser 180 to separate the first and second connecting members 160 and 170 from the first and second contact pads 130 and 140, respectively. That is, the irradiation range of the laser 180 can be the configuration region of the first and second connecting members 160 and 170 and the region between the first and second connecting members 160 and 170. Generally, the area of the light emitting element 150 in the orthographic projection of the circuit substrate 110 can be approximately or slightly larger than the irradiation area of the laser 180. Therefore, when the light emitting element 150 is accurately transferred to the predetermined position, the irradiation range of the laser 180 will completely fall on the light emitting element 150.

[0104] Please refer to FIG. 1B , FIG. 1B The positions of the light emitting elements 150a (upper left), 150b (upper right) and 150c (lower left) transferred on the circuit substrate 110 after the mass transfer manufacturing process are shown, wherein the light emitting element 150a is approximately located at the predetermined position, the light emitting element 150b is offset upward by a distance D1, and the light emitting element 150c is offset downward by a distance D2. Therefore, the light emitting elements 150b and 150c need to be removed and repaired.

[0105] Please refer to FIG. 1B and FIG. 1D When the mass transfer is almost error-free and the light emitting element 150a is approximately located at the predetermined position, the light emitting element 150a is not offset. Therefore, the irradiation range of the laser 180 completely overlaps the light emitting element 150a. Due to the shielding of the light emitting element 150a, the circuit substrate 110 will not be damaged by the laser 180.

[0106] Please refer to FIG. 1B and FIG. 1E Since the light emitting element 150b is offset upward by a distance D1, part of the laser E1 does not overlap the light emitting element 150b. In this embodiment, since the barrier 120 can shield part of the laser E1, it can prevent part of the laser E1 from damaging the circuit substrate 110 below.

[0107] Please refer to FIG. 1B and FIG. 1F Since the light emitting element 150c is offset downward by a distance D2, part of the laser E2 does not overlap the light emitting element 150c. In this embodiment, since the barrier 120 can shield part of the laser E2, it can prevent part of the laser E2 from damaging the circuit substrate 110 below.

[0108] Please refer to FIG. 1G and FIG. 1HAfter the light emitting elements 150b, 150c are removed, the first electrodes 151 and the second electrodes 152 of the light emitting elements 150d, 150e are connected to the first contact pad 130 and the second contact pad 140 by the first connecting material 161 and the second connecting material 171, respectively, to complete the repair. However, the light emitting elements 150d, 150e are not limited to being bonded to the first contact pad 130 and the second contact pad 140 for repair. In addition, the first connecting material 161 and the second connecting material 171 can be conductive adhesive or other suitable conductive bonding material.

[0109] In some embodiments, the plurality of light emitting elements 150 can all be blue light emitting diodes, and the display device 10 can further include a color conversion layer CT disposed on the plurality of light emitting elements 150, wherein the color conversion layer CT can include phosphor or similar wavelength conversion material to convert the blue light emitted by the blue light emitting diodes into light of different colors to achieve full-color display. In other embodiments, the plurality of light emitting elements 150 can include a plurality of red light emitting diodes, a plurality of green light emitting diodes, and a plurality of blue light emitting diodes to achieve full-color display. When the light emitting colors of the plurality of light emitting elements 150 are different, FIG. 1H The color conversion layer CT in the display device 10 can be selectively omitted or retained. In some other embodiments, the plurality of light emitting elements 150 can all be white light emitting diodes, and the color conversion layer CT can be a color filter layer to achieve full-color display.

[0110] FIG. 2A is a top view of a display device 20 according to an embodiment of the present application. FIG. 2B is FIG. 2A is a magnified view of a region II of the display device 20 before repair. FIG. 2C is a cross-sectional view taken along FIG. 2B is a cross-sectional view taken along FIG. 2D is a cross-sectional view taken along FIG. 2B is a cross-sectional view taken along FIG. 2E is a cross-sectional view taken along FIG. 2B is a cross-sectional view taken along FIG. 2F is a cross-sectional view taken along FIG. 2B is a cross-sectional view taken along FIG. 2A schematically shows the circuit substrate 110 and the light emitting elements 150, and other components are omitted.

[0111] Hereinafter, the same reference numerals are used for the same components in the drawings. FIGS. 1A-1HThe element numbers of the embodiments and the related contents, in which the same or similar numbers are used to represent the same or similar elements, and the descriptions of the same technical contents are omitted. For the descriptions of the omitted parts, refer to FIGS. 1A-1H the embodiments.

[0112] Please refer to FIGS. 2A-2C , the display device 20 includes a circuit substrate 110, a barrier 220, a first contact pad 130, a second contact pad 140, a light emitting element 150, a first connecting member 160, and a second connecting member 170. The barrier 220 is located on the circuit substrate 110 and has opposite first and second side surfaces 221 and 222, and opposite third and fourth side surfaces 223 and 224. The first contact pad 130 is located on the circuit substrate 110 and is adjacent to the first side surface 221 of the barrier 220. The second contact pad 140 is located on the circuit substrate 110 and is adjacent to the second side surface 222 of the barrier 220. The light emitting element 150 is located on the barrier 220, the first contact pad 130, and the second contact pad 140, and includes a first electrode 151, a second electrode 152, and a light emitting stack 153. The first connecting member 160 connects the first electrode 151 and the first contact pad 130. The second connecting member 170 connects the second electrode 152 and the second contact pad 140, wherein the third side surface 223 and the fourth side surface 224 of the barrier 220 are aligned with a side surface of the first connecting member 160 and a side surface of the second connecting member 170.

[0113] Compared with the display device 10 shown in FIGS. 1A-1H , the difference between the structure in the display device 20 shown in FIGS. 2A-2F is that the barrier 220 of the display device 20 has an opening OP.

[0114] Considering that the precision error of the mass transfer fabrication process is usually about 3 μm, in the present embodiment, please refer to FIG. 2B , the barrier 220 only needs to cover the region with a width of at least 3 μm downward from the upper side surface connecting line L of the first connecting member 160 and the second connecting member 170, and the region with a width of at least 3 μm upward from the lower side surface connecting line M of the first connecting member 160 and the second connecting member 170, so as to ensure that the circuit substrate 110 will not be damaged by the laser 180, without completely covering the region between the upper side surface connecting line L and the lower side surface connecting line M. Therefore, the barrier 220 can have the opening OP, and the distance S1 between the opening OP and the third side surface 223 of the barrier 220 and the distance S2 between the opening OP and the fourth side surface 224 of the barrier 220 can be greater than or equal to 3 μm. In this way, it can be ensured that the barrier 220 can shield the laser 180 in any offset state of the light emitting element 150 caused by the mass transfer fabrication process.

[0115] In this embodiment, the opening OP can divide the barrier 220 into a first portion 220a and a second portion 220b, wherein the first portion 220a has a third side 223, the second portion 220b has a fourth side 224, and the first portion 220a is separated from the second portion 220b, but the present application is not limited thereto. In some embodiments, the first portion 220a can also be connected to the second portion 220b.

[0116] In some embodiments, by designing the width W1, W2 of the first portion 220a and the second portion 220b in the direction perpendicular to the third side 223 or the fourth side 224 to be between 3 μm to 5 μm, it can also ensure that the first portion 220a and the second portion 220b can shield the laser 180 in any offset state of the light emitting element 150 due to the mass transfer manufacturing process. In certain embodiments, the aperture Dp of the opening OP in the direction perpendicular to the third side 223 or the fourth side 224 can be between 8 μm to 12 μm. It can also be said that the spacing between the first portion 220a and the second portion 220b can be between 8 μm to 12 μm.

[0117] In this embodiment, the light emitting element 150 is removed by the laser 180 irradiating the configuration area of the first and second connecting members 160, 170, and the area between the first and second connecting members 160, 170, so that the first and second connecting members 160, 170 are separated from the first and second contact pads 130, 140, respectively. The orthographic projection area of the light emitting element 150 on the circuit substrate 110 can be approximately or slightly larger than the irradiation area of the laser 180. Therefore, when the light emitting element 150 is transferred to the predetermined position, the irradiation range of the laser 180 will completely fall on the light emitting element 150.

[0118] Please refer to FIG. 2B , FIG. 2B The positions of the light emitting elements 150f (upper left), 150g (upper right), and 150h (lower left) after the mass transfer manufacturing process are shown, wherein the light emitting element 150f is approximately located at the predetermined position, the light emitting element 150g is offset upward by a distance D3, and the light emitting element 150h is offset downward by a distance D4, so the light emitting elements 150g and 150h need to be removed and repaired.

[0119] Please refer to FIG. 2B and FIG. 2D When the mass transfer is almost error-free and the light emitting element 150f is approximately located at the predetermined position, since the light emitting element 150f is not offset, the irradiation range of the laser 180 completely overlaps the light emitting element 150f. By the shielding of the light emitting element 150f, the circuit substrate 110 will not be damaged by the laser 180.

[0120] Please refer to FIG. 2B and FIG. 2E Since the light emitting element 150g is offset upward by the distance D3, part of the laser E3 does not overlap the light emitting element 150g. In this embodiment, since the second portion 220b of the barrier 220 can shield part of the laser E3, it is possible to prevent the part of the laser E3 from damaging the circuit substrate 110 below.

[0121] Please refer to FIG. 2B and FIG. 2F Since the light emitting element 150h is offset downward by the distance D4, part of the laser E4 does not overlap the light emitting element 150h. In this embodiment, since the first portion 220a of the barrier 220 can shield part of the laser E4, it is possible to prevent the part of the laser E4 from damaging the circuit substrate 110 below.

[0122] In summary, in the display device of the present application, by the provision of the barrier, it is possible to avoid the circuit substrate from being damaged during the removal of the light emitting element, and to improve the production yield or reliability of the display device.

[0123] Although the present application has been disclosed in connection with the above embodiments, it will be apparent to those of ordinary skill in the art that modifications and / or additions can be made thereto without departing from the spirit and scope of the application. Therefore, the scope of the present application should be determined by the appended claims.

Claims

1.A display device, comprising: a circuit substrate; a barrier on the circuit substrate, having opposite first and second sides and opposite third and fourth sides; a first contact pad on the circuit substrate, adjacent to the first side of the barrier; a second contact pad on the circuit substrate, adjacent to the second side of the barrier; a light emitting element on the barrier, the first contact pad and the second contact pad, comprising a first electrode and a second electrode; a first connecting member connecting the first electrode and the first contact pad; and a second connecting member connecting the second electrode and the second contact pad, wherein the third and fourth sides of the barrier are aligned with sides of the first and second connecting members. 2.The display device of claim 1, wherein the first and second contact pads are attached to the barrier. 3.The display device of claim 1, wherein a top surface of the barrier is not higher than a top surface of the first or second connecting member. 4.The display device of claim 1, wherein a height of the barrier is between 1 μm and 2 μm. 5.The display device of claim 1, wherein the barrier does not contact the light emitting element. 6.The display device of claim 1, wherein a footprint of the barrier on the circuit substrate is between a footprint of the first connecting member on the circuit substrate and a footprint of the second connecting member on the circuit substrate. 7.The display device of claim 1, wherein the barrier is sandwiched between the first and second connecting members. 8.The display device of claim 1, wherein the first and second connecting members comprise metal or conductive paste. 9.The display device of claim 1, further comprising an insulating layer between the first and second contact pads and the circuit substrate, and the barrier and the insulating layer are of the same film layer. 10.The display device of claim 1, wherein the circuit substrate comprises an active element, and the active element is electrically connected to the first or second contact pad. 11.The display device of claim 1, wherein the barrier has an opening, and a distance between the opening and the third side of the barrier and a distance between the opening and the fourth side of the barrier are greater than or equal to 3 μm. 12.The display device of claim 11, wherein a diameter of the opening in a direction perpendicular to the third or fourth side is between 8 μm and 12 μm. 13.The display device of claim 11, wherein the opening divides the barrier into a first portion and a second portion, and the first portion has the third side and the second portion has the fourth side. 14.The display device of claim 13, wherein the first portion is separated from the second portion. ​ 15.The display device of claim 13, wherein a width of the first portion and the second portion in a direction perpendicular to the third side or the fourth side is between 3 μm and 5 μm.

Citation Information

Patent Citations

  • Light-emitting module, electronic equipment, sensing structure and manufacturing method thereof

    CN111665982A

  • Light emitting device package and lighting device including same

    US20200212276A1