A low temperature ion trap system

Abstract

The present invention belongs to the field of quantum computing technology, and provides a low-temperature ion trap system, including: a base, an atom generator, an ion trap device and a cover plate, wherein the ion trap device is covered on the base, the cover plate encapsulates the ion trap device, the atom generator is installed on the base and is coaxial with the ion trap device; the atom generator has an emission port for atomic emission, and the emission port is directly opposite to the confinement channel of the ion trap device; the ion trap device generates a confinement electric field, and the confinement electric field ionizes atoms and confines ions in the confinement channel. The system has a compact structure, complete functions, and high reliability, and can meet various experimental requirements of quantum computing; the system has low heat load, reduces the system's demand for cold, and realizes the functional integration of the low-temperature blade-shaped ion trap; it avoids problems such as short circuits and open circuits caused by messy wiring, and provides necessary conditions for the commercialization of ion trap quantum computers.

Description

Technical Field

[0001] The invention belongs to the technical field of quantum computing, and in particular relates to a low-temperature ion trap system. Background Art

[0002] In the field of quantum computing, ion trap technology based on trapped ions is one of the mainstream technical paths to achieve quantum computing. It uses ions cooled to the ground state as quantum bits, and uses lasers to manipulate and read quantum bits. In order to improve the trapped stability of ions and extend the coherence time of quantum bits, it is often necessary to place ion traps in ultra-high vacuum chambers. In order to further reduce the collision of gas molecules with trapped ions, the use of ultra-low temperature technology to cool ion traps to the liquid helium temperature zone has been applied in the industry. On the one hand, ion traps in the liquid helium temperature zone can further improve the vacuum degree of the vacuum chamber and reduce residual gas molecules. On the other hand, they can reduce the heating of ion crystals and increase the duration of ion crystals, thereby extending the coherence time of quantum bits and greatly improving the fidelity of quantum logic gates.

[0003] As a form of linear Paul trap, the blade-shaped ion trap has the advantages of stable trapped electric field, strong ion controllability, and multiple light entry angles, and is widely used in ion trap quantum computing. However, compared with the planar ion trap, the blade-shaped ion trap is difficult to achieve compactness and integration in ultra-low temperature and ultra-high vacuum systems because the four blade electrodes need to be distributed in three-dimensional space. At the same time, it is difficult to planarly wire the power leads of each blade electrode, resulting in a messy routing that is prone to short circuits.

[0004] Therefore, there is an urgent need for a low-temperature ion trap system to solve the problem that blade-type ion traps are difficult to achieve compactness and integration in ultra-low temperature and ultra-high vacuum systems. Summary of the invention

[0005] In order to solve the above technical problems, the present invention provides a low-temperature ion trap system, including: a base, an atom generator, an ion trap device and a cover plate, the ion trap device is covered on the base, the cover plate encapsulates the ion trap device, the atom generator is installed on the base and is coaxial with the ion trap device; the atom generator has an emission port for atomic emission, and the emission port is directly opposite to the confinement channel of the ion trap device; the ion trap device generates a confinement electric field, and the confinement electric field ionizes atoms and confines ions in the confinement channel.

[0006] Optionally, the atomic generator includes a shell and an atomic source and a heater installed in the shell; the emission port is arranged at one end of the shell, and the other end is encapsulated by a sealing plate; the heater heats the atomic source to excite the atomic source to emit atoms, and the atoms are ejected from the shell through the emission port.

[0007] Optionally, the heater is provided with a terminal, and the heater is connected to a power source via the terminal.

[0008] Optionally, the atomic source is made of one or more metals selected from the group consisting of calcium, cesium, beryllium and ytterbium.

[0009] Optionally, the atomic source is formed in a column shape.

[0010] Optionally, the ion trap device comprises a trap shell, the trap shell is provided with a plurality of laser windows, the laser windows are used for laser to enter the interior of the trap shell; a plurality of blade racks are provided inside the trap shell, the blade racks are alternately installed with a first blade and a second blade; the first blade is connected to a DC power supply, the second blade is connected to a radio frequency signal, and the first blade and the second blade together form the confinement channel.

[0011] Optionally, the laser window is configured with an optical window, the optical window is made of fused quartz, and an anti-reflection film is attached to the optical window.

[0012] Optionally, the first blade and the second blade are both made of ceramic, with a conductor layer plated on the surface, the conductor layer forms a plurality of independent pole pieces, and the pole pieces are connected to the DC power supply or the radio frequency signal.

[0013] Optionally, a plurality of through grooves are provided on the cutting edge sides of the first blade and the second blade.

[0014] Optionally, a filter capacitor is configured at the front end of the first blade, the filter capacitor is attached to the blade holder, the output end of the filter capacitor is connected to the first blade, and the input end of the filter capacitor is connected to the DC power supply.

[0015] Compared with the prior art, the low-temperature ion trap system of the present invention has the following beneficial effects:

[0016] 1. The functional integration of the cryogenic blade-shaped ion trap has been achieved.

[0017] 2. The overall structure is compact and integrates a layer of cold shield, making the design of the peripheral vacuum chamber more compact and integrated.

[0018] 3. A variety of trap laser channels and objective optical channels are set up to meet various experimental needs of quantum computing.

[0019] 4. The overall heat load is greatly reduced. Since the ion trap is encapsulated in a smaller space, the system's demand for cooling is greatly reduced.

[0020] 5. Micromachining technology is used to integrate the peripheral circuits of the blade-shaped ion trap, greatly improving the efficiency of ion trap assembly and avoiding problems such as short circuits and open circuits caused by messy wiring.

[0021] 6. Compact structure, complete functions, high reliability, low heat load, easy to use modular products.

[0022] 7. The channel window is relatively close to the central confinement area of ​​the ion trap, which enables a more compact design of the entire cryogenic vacuum cavity and provides the necessary conditions for the commercialization of ion trap quantum computers. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a three-dimensional schematic diagram of the overall structure of the low-temperature ion trap system of the present invention;

[0024] Figure 2 A half-section schematic diagram of the overall structure of the low-temperature ion trap system of the present invention;

[0025] Figure 3 is a three-dimensional schematic diagram of the overall structure of the ion trap device of the present invention;

[0026] Figure 4 is a front view schematic diagram of an ion trap device of the present invention;

[0027] Figure 5 for Figure 4 AA cross-sectional view of ;

[0028] Figure 6 for Figure 5 Schematic diagram of CC cross-section;

[0029] Figure 7 It is a three-dimensional exploded schematic diagram of the atomic generator of the present invention;

[0030] Figure 8 It is a half schematic diagram of the atomic generator of the present invention.

[0031] Illustration Description:

[0032] 1. Base; 2. Prisoner channel; 4. Cover plate; 5. Window; 6. Window sheet; 8. Through slot; 10. Ion trap device; 20. Atom generator;

[0033] 100, trap housing; 101, laser window; 102, blade holder; 103, first blade; 104, second blade; 105, horizontal side; 106, vertical side; 107, inclined surface; 108, opening slot; 109, wire slot; 110, conductor film; 112, positioning column; 113, through hole; 114, right-angle through hole; 115, welding column; 116, connector; 117, optical window; 118, capacitor;

[0034] 200, shell; 201, atomic source; 202, heater; 203, emission port; 204, sealing plate; 205, outer flange; 206, sleeve; 207, heating wire; 208, terminal; 209, open end; 210, thermal insulation tube; 211, spring. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0036] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they cannot be understood as limitations on the present invention.

[0037] In addition, in the description of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", etc. should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can also be the internal communication of two components, it can be a wireless connection, or it can be a wired connection. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0038] In addition, the technical features involved in the different embodiments of the present invention described later can be combined with each other as long as they do not conflict with each other.

[0039] See also Figure 1-Figure 8 An embodiment of the present invention provides a low-temperature ion trap system, including: a base 1, an atom generator 20, an ion trap device 10 and a cover plate 4. Specifically, the base 1 is a double-layer plate structure bracket, which is I-shaped when viewed from the front, and the upper layer can be installed to connect the atom generator 20 and the ion trap device 10. The base 1 can be made of non-magnetic metal materials with high thermal conductivity, such as oxygen-free copper or stainless steel. Preferably, the base 1 is made of oxygen-free copper. Using non-magnetic materials to make the base 1 can reduce the magnetic interference of the ion trap system during operation, ensuring that the device function indication or data collection is more accurate.

[0040] Furthermore, if Figure 3As shown, the ion trap device 10 is a device with two ends transparent, the front end of which is covered on the base 1, and the rear end is encapsulated by the cover plate 4. Among them, the end of the ion trap device 10 connected to the base 1 is the front end. The ion trap device 10 is formed with a trapping channel 2, the ion trap device 10 can ionize atoms, the trapping channel 2 can trap ions, and the ion trap device 10 is connected to a DC power supply and a radio frequency signal source, and the DC power supply and the radio frequency signal source are provided by external equipment.

[0041] Furthermore, the atomic generator 20 is installed on the base 1 on the same side as the ion trap device 10, and after the atomic generator 20 is installed, its axis is coaxial with the axis of the ion trap device 10. The atomic generator 20 can be excited to generate atomic vapor, and there are a large number of atoms in the atomic vapor. The atomic generator 20 has an emission port 203, and the emission port 203 is used to emit the atoms generated by the atomic generator 20, and the emitted atoms form an atomic beam. The emission port 203 of the assembled atomic generator 20 is directly opposite to the confinement channel 2 of the ion trap device 10, and the ion trap device 10 can generate a confinement electric field, and the confinement electric field ionizes atoms and confines ions in the confinement channel 2.

[0042] Furthermore, the cover plate 4 is in the shape of a plate, and is used to tightly seal the rear end of the ion trap device 10. The cover plate 4 can be made of a non-magnetic metal material with high thermal conductivity, such as oxygen-free copper or stainless steel. Preferably, the cover plate 4 is made of oxygen-free copper. A viewing window 5 is provided on the cover plate 4, and the viewing window 5 is equipped with a viewing window plate 6, and the viewing window plate 6 can be made of fused quartz. The viewing window 5 can be used to observe the internal working state of the ion trap device 10 or provide an axial channel for the laser to enter the ion trap device 10, which is conducive to manipulating the ions in the ion trap.

[0043] In some embodiments, Figure 7-8 As shown, the atom generator 20 includes a shell 200, in which an atom source 201 and a heater 202 are installed; an emission port 203 is provided at one end of the shell 200, and the other end is sealed by a sealing plate 204; the heater 202 heats the atom source 201 to excite the atom source 201 to emit atoms, and the atoms are ejected from the shell 200 through the emission port 203. The emission port 203 is located in the central axis direction of the ion trap device 10, and is relatively close to the center of the ion trap device 10, so that atoms can quickly and accurately enter the confinement area in the center of the ion trap device 10, thereby realizing ion confinement.

[0044] Furthermore, the shell 200 is a cylindrical cavity with one end closed and the other end open, and the open end 209 thereof is formed with an outer flange 205, and the open end 209 is sealed and installed by a sealing plate 204, and the closed end of the shell 200 is provided with an emission port 203. The shell 200 can be made of oxygen-free copper or stainless copper or other non-magnetic high thermal conductivity metals. Preferably, the shell 200 is made of oxygen-free copper. The shell 200 can perform heat sink treatment on the atomic generator 20 as a whole, and guide the heat generated by the heater 202 to the cold source, so as to prevent the heat from flowing to the ion trap device 10 and causing the destruction of the ion crystal.

[0045] Further, the atomic source 201 is installed inside the housing 200 to generate atomic particles. The atomic source 201 can be made of one or more metals selected from calcium, cesium, beryllium and ytterbium. Preferably, the atomic source 201 is made of calcium metal. The atomic source 201 can generate atomic vapor when heated. The atomic vapor contains a large number of atomic particles. The atomic particles can be ejected from the housing 200 from the emission port 203 and enter the confinement area of ​​the ion trap device 10.

[0046] Furthermore, the atomic source 201 can be in powder or solid form. In actual use, in order to better heat the atomic source 201 and facilitate installation, the atomic source 201 is processed into a cylindrical or rectangular column shape. Preferably, the atomic source 201 is processed into a cylindrical shape, which can facilitate installation and uniform heating of the whole, and is conducive to the commercial application of the ion trap device 10.

[0047] Further, the heater 202 is installed inside the housing 200, and the heater 202 wraps the periphery of the atomic source 201. The heater 202 is used to heat the atomic source 201, thereby stimulating the atomic source 201 to generate a large number of atoms to form atomic vapor, and the atomic vapor is ejected from the emission port 203 into the confinement area of ​​the ion trap device 10. Specifically, the heater 202 includes a sleeve 206 and a heating wire 207, and the heating wire 207 is wound around the outer surface of the sleeve 206 and connected to a power source (not shown) through the sealing plate 204 through the terminal 208. Preferably, the sealing plate 204 is an insulator resistant to high and low temperatures, and the terminal 208 passes through the sealing plate 204 and is tightly installed, or the terminal 208 and the sealing plate 204 can be cast and molded at one time to improve the sealing of the sealing plate 204. The sealing plate 204 can be tightly installed with the housing 200 by bolts or welding, etc. Optionally, the sealing plate 204 is installed on the outer flange 205 of the housing 200 by bolt connection. In order to further improve the installation sealing performance of the sealing plate 204, a sealing gasket (not shown) may be configured to ensure the normal operation of the atomic generator 20 and to extend the overall service life of the device or apparatus.

[0048] Further, the sleeve 206 can be processed into a cylinder with one end open and the other end closed, and similarly, it can be a cylinder or a rectangular cylinder, preferably a cylinder. The sleeve 206 can be sleeved on the periphery of the atomic source 201, and the open end 209 is used for atomic vapor diffusion. The outer surface of the sleeve 206 is formed with a spiral groove (not shown), and the heating wire 207 is wound in the groove. The two ends are connected to the terminal 208, and the terminal 208 is connected to an external power supply. Specifically, the sleeve 206 is made of heat-conducting high-temperature insulating material, which can quickly transfer heat to the atomic source 201. Preferably, the sleeve 206 is made of ceramics, such as aluminum nitride or silicon nitride ceramics. Ceramics have good thermal stability and thermal conductivity, and are very suitable for manufacturing the heater 202 of the ion generator, improving production efficiency, and facilitating the product application of the ion trap device 10 or equipment.

[0049] In some embodiments, a heat-insulating tube 210 is disposed on the periphery of the heater 202. The heat-insulating tube 210 can be processed into a hollow cylinder and sleeved on the periphery of the sleeve 206. The heat-insulating tube 210 is made of insulating materials with low thermal conductivity, such as glass fiber, asbestos or rock wool. The function of the heat-insulating tube 210 is to slow down the loss of heat to the outside when the internal heating wire 207 is powered on for heating, so that the heat of the heating wire 207 can be absorbed by the internal atomic source 201 to the maximum extent, thereby improving the heating efficiency.

[0050] In some embodiments, springs 211 are respectively arranged at both ends of the housing 200, and the springs 211 may be compressed springs 211, and the two springs 211 restrict the atomic source 201 to the middle of the housing 200. The configuration of the springs 211 can ensure that there is a certain distance between the atomic source 201 and the emission hole, so that the atomic vapor has a certain directionality when ejected, and avoids the contamination of the ion trap by atoms; in addition, the springs 211 can also ensure the effective insulation distance between the heating wire 207 and the housing, avoid short circuit, ensure the normal operation of the ion trap device 10 or the equipment, and improve the equipment quality.

[0051] In some embodiments, Figure 3-Figure 6 As shown, the ion trap device 10 has a trap shell 100, and the trap shell 100 is provided with a plurality of laser windows 101, and the laser windows 101 are used for laser to enter the interior of the trap shell 100; a plurality of blade racks 102 are arranged inside the trap shell 100; a first blade 103 and a second blade 104 are alternately installed on the blade rack 102; the first blade 103 is connected to a DC power supply, and the second blade 104 is connected to a radio frequency signal, and the first blade 103 and the second blade 104 generate a trapped electric field, and the first blade 103 and the second blade 104 together form a trapped channel 2.

[0052] Further, the trap housing 100 is formed into a symmetrical hollow octagonal cylinder, forming two symmetrical large-area horizontal side surfaces 105, two small-area vertical side surfaces 106 and four symmetrical small-area inclined surfaces 107. The trap housing 100 can be made of oxygen-free copper or stainless steel or other non-magnetic metals. Preferably, the trap housing 100 is made of oxygen-free copper, which is conducive to the processing and heat conduction of the trap housing 100. Four symmetrical blade racks 102 are installed on the inner side surfaces of the four small-area inclined surfaces 107 of the trap housing 100. The blade racks 102 are similar to 7-shaped blocks, and the structures of the four blade racks 102 are the same.

[0053] Furthermore, the blade holder 102 can be made of high thermal conductivity ceramics. High thermal conductivity ceramic materials are generally oxides, nitrides, carbides, borides, etc., such as AlN, BeO, Si3N4, SiC, BN, etc., which mainly play the role of insulation and thermal conductivity. Preferably, the blade holder 102 is made of beryllium oxide ceramics. The blade holder 102 is provided with a blade installation opening slot 108 for positioning and installing the blade. The overall structure is compact, which is conducive to the integration of the ion trap device 10, and can ultimately realize the commercialization of the low-temperature ion trap.

[0054] In some embodiments, five relatively shallow wire grooves 109 are machined on the side of the blade holder 102 by micromachining technology. A layer of conductor film 110 is attached to the wire groove 109. The conductor film 110 is a metal film. Preferably, the metal film is plated with gold material. Using gold material can ensure the stability of the ion trap device 10.

[0055] Furthermore, five mounting holes (not shown) are provided on the opening groove 108, and the blade can be mounted on the blade holder 102 through the five mounting holes. The mounting holes are also used as electrical connection terminals. The annular connecting piece (not shown) is fixedly connected to the electrode of the blade by fastening screws, so that the conductor film 110 is connected to the electrode, and then the DC signal or radio frequency signal of the conductor film 110 is input to the electrode, thereby optimizing the structural circuit and making the ion trap device 10 compact and integrated as a whole.

[0056] Furthermore, six positioning posts 112 are formed on the opposite side of the opening slot 108 of the blade holder 102, that is, on the top of the blade holder 102. The six positioning posts 112 are directly embedded and installed on the well housing 100, and the structure is more compact. Specifically, the positioning posts 112 can be formed into a cylinder or a rectangular body. Preferably, the positioning posts 112 are cylinders; correspondingly, six through holes 113 are processed on the four small-area inclined surfaces 107 of the well housing 100, and the through holes 113 are tightly installed with the positioning posts 112. A right-angle through hole 114 is processed from the top surface of the positioning post 112 downward to the end position of the side wire groove 109 of the blade holder 102, so that the right-angle through hole 114 is connected with the wire groove 109. The right-angle through hole 114 is installed on a welding post 115 on one side of the wire groove 109. The welding post 115 and the conductor film 110 can be connected by welding to form a current path.

[0057] Furthermore, a connector 116 is installed on the outer side of the trap housing 100 at a position corresponding to the positioning column 112. The connector 116 is an SMP RF connector 116. The SMP connector 116 has a right-angle through hole 114 for inserting a core into the positioning column 112 and is connected to the welding column 115. The SMP connector 116 is used to connect direct current or RF signals to the conductor film 110 and finally transmit them to the first blade 103 or the second blade 104, thereby generating a pseudopotential in the trap channel 2 at the center of the ion trap device 10, forming a trapped electric field, and realizing ion trapping. The SMP connector 116 can be configured with bolts or fastened to the trap housing 100 by welding or bonding. In actual operation, the four blades are two groups of blades with different connection methods. The two blades in the first blade 103 group are connected to direct current signals, and the two blades in the second blade 104 group are connected to RF signals.

[0058] Furthermore, the first blade 103 and the second blade 104 can be made of ceramics with high thermal conductivity. The ceramic materials with high thermal conductivity are generally oxides, nitrides, carbides, borides, etc., such as AlN, BeO, Si3N4, SiC, BN, etc., which mainly play the role of insulation and thermal conductivity. Preferably, the first blade 103 and the second blade 104 are made of beryllium oxide ceramics. The surfaces of the first blade 103 and the second blade 104 are plated with a conductor layer (not shown) to form a path for the signal source. The conductor layer is preferably plated with gold material, and the use of gold material can ensure the stability of the ion trap device.

[0059] Further, the first blade 103 and the second blade 104 each have 5 independent pole pieces. When a direct current signal is connected to the first blade 103 group, 5 connectors 116 are occupied. The output ends of the 5 connectors 116 (i.e., the front end of the first blade 103) are all equipped with capacitors 118 that can filter. The capacitors 118 can be directly welded and attached to the conductor film 110 by welding, and form an integrated circuit with the conductor film 110, which simplifies the circuit connection. The capacitor 118 can filter the direct current, stabilize the voltage, and ensure the stability of the electric field of the ion trap device 10. Another connector 116 can be grounded to provide a grounding terminal for the capacitor 118 at the rear end of the above-mentioned 5 connectors 116, thereby ensuring the normal operation of the circuit. When a radio frequency signal is connected to the second blade 104 group, one of the connectors 116 is occupied, and the others can be used as spares. Only one radio frequency signal needs to be input into the ion trap device 10 to realize the trapped ion function, which simplifies the circuit connection and prevents problems such as short circuit and open circuit caused by messy wiring.

[0060] Furthermore, the laser window 101 is arranged on two large-area side surfaces (i.e., horizontal side surfaces 105) and two small-area side surfaces (i.e., vertical side surfaces 106) of the trap housing 100, and an optical window 117 is installed on the laser window 101. The optical window 117 can be made of fused quartz and attached with an anti-reflection film (not shown). The anti-reflection film is preferably selected according to the wavelength of the transmitted laser, which can improve the pass rate of the laser and ensure the use effect of the ion trap device 10. The four optical windows 117 correspond to the four opening directions of the ion trap device 10 respectively, and the four optical windows 117 provide a variety of laser incident angles to meet the needs of laser channels such as atomic two-photon ionization, ion laser cooling, state detection, and ion manipulation.

[0061] In some embodiments, four through slots 8 are also provided on the blade sides of the first blade 103 and the second blade 104. The function of the through slots 8 is as follows: when the ion trap device 10 is powered on, the position of the through slots 8 can form a more stable voltage between the pole pieces, thereby forming a stable trapping electric field in the trapping channel 2 to trap ions, which can further improve the trapping efficiency of the ion trap device 10.

[0062] In some embodiments, the low-temperature ion trap system of the present invention can be installed in a low-temperature vacuum chamber in a closed space through the base 1. The trap shell 100 is directly connected to the low-temperature cold source to form a cold screen, which can effectively condense and adsorb the residual gas in the vacuum chamber to form an ultra-high vacuum around the ion trap device 10; in addition, the trap shell 100 can also shield the heating effect of the external black body background radiation on the ions, increase the duration of the ion crystal, extend the quantum bit coherence time, greatly improve the fidelity of the quantum logic gate, and improve the performance stability and working accuracy of the ion trap system.

[0063] The above-mentioned embodiments are only preferred embodiments of the present invention and cannot be used to limit the scope of protection of the present invention. Any non-substantial changes and substitutions made by technicians in this field on the basis of the present invention shall fall within the scope of protection required by the present invention.

Claims

1. A low temperature ion trap system, characterized in that: include: A base, an atom generator, an ion trap device and a cover plate, wherein the ion trap device is covered on the base, the cover plate encapsulates the ion trap device, and the atom generator is installed on the base and is coaxial with the ion trap device; The atom generator has an emission port for atomic emission, and the emission port is directly opposite to the confinement channel of the ion trap device; the ion trap device generates a confinement electric field, and the confinement electric field ionizes atoms and confines ions in the confinement channel. The ion trap device is a device with two ends transparent, the front end cover of the ion trap device is installed on the base, the rear end of the ion trap device is encapsulated by the cover plate, the ion trap device has a trap shell, the trap shell is provided with a plurality of laser windows, the laser windows are used for laser to enter the inside of the trap shell, the inside of the trap shell is provided with a plurality of blade racks, the blade racks are alternately installed with a first blade and a second blade, the first blade is connected to a DC power supply, the second blade is connected to a radio frequency signal, the first blade and the second blade together form the prison channel, and the side of the blade rack is processed with a wire groove by micromachining technology.

2. The cryogenic ion trap system according to claim 1, characterized in that: The atomic generator includes a shell, an atomic source and a heater installed in the shell; the emission port is arranged at one end of the shell, and the other end is sealed by a sealing plate; the heater heats the atomic source to excite the atomic source to emit atoms, and the atoms are ejected from the shell through the emission port.

3. The cryogenic ion trap system according to claim 2, characterized in that: The heater is provided with a terminal, and the heater is connected to a power source via the terminal.

4. The cryogenic ion trap system according to claim 2, characterized in that: The atomic source is made of one or more metals selected from calcium, cesium, beryllium and ytterbium.

5. The cryogenic ion trap system according to claim 4, characterized in that: The atom source is formed in a column shape.

6. The cryogenic ion trap system according to claim 1, characterized in that: The laser window is configured with an optical window, the optical window is made of fused quartz, and an anti-reflection film is attached to the optical window.

7. The cryogenic ion trap system according to claim 1, wherein: The first blade and the second blade are both made of ceramics, with a conductor layer plated on the surface. The conductor layer forms a plurality of independent pole pieces, and the pole pieces are connected to the DC power supply or the radio frequency signal.

8. The cryogenic ion trap system according to claim 7, characterized in that: A plurality of through grooves are arranged on the blade sides of the first blade and the second blade.

9. The cryogenic ion trap system according to claim 7, characterized in that: A filter capacitor is configured at the front end of the first blade, the filter capacitor is attached to the blade holder, the output end of the filter capacitor is connected to the first blade, and the input end of the filter capacitor is connected to the DC power supply.

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