Fully differential high bandwidth transimpedance amplifier based on multipath frequency compensation

Abstract

The present invention discloses a fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation, comprising: a feedback resistor unit, a multipath frequency compensation core amplifier unit, a signal input end, and a signal output end. The multipath frequency compensation core amplifier unit comprises a first amplifier stage, a second amplifier stage, a third amplifier stage, a first feedforward stage, and a second feedforward stage. The input end of the multipath frequency compensation core amplifier unit is connected to the signal input end, and the output end is connected to the signal output end. The first end of the feedback resistor unit is connected to the signal input end, and the second end is connected to the signal output end. In the present invention, the multipath frequency compensation core amplifier unit performs multipath feedforward compensation based on a three-stage amplification structure, while increasing the amplifier gain, improving the phase margin, and realizing the function of a push-pull output stage, thereby enabling the transimpedance amplifier to drive the maximum output current of a silicon photomultiplier tube at a lower static power consumption without generating reverse pulses.

Description

Technical Field

[0001] The present invention belongs to the technical field of laser radar, and in particular relates to a fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation. Background Art

[0002] With the development of science and technology, people's life scenes are becoming more and more automated and intelligent, and intelligent unmanned control equipment continues to emerge. Radar, as the eyes of robots, can help robots obtain information about the surrounding environment, and therefore has very important market value.

[0003] LiDAR offers advantages such as high resolution, strong resistance to active interference, high detection reliability, immunity to light, and a wide speed measurement range. It can provide real-time three-dimensional images of the surrounding environment, giving unmanned control equipment a pair of sharp "eyes." The LiDAR receiver plays a crucial role in the performance of the LiDAR system, and high bandwidth is a key performance indicator for the LiDAR receiver's front-end circuitry. In the receiver, laser light is converted into current by a silicon photomultiplier tube, which is then converted to voltage via resistors for amplification. However, this approach sacrifices bandwidth, so a transimpedance amplifier is often used to achieve high bandwidth.

[0004] However, the transimpedance amplifier circuit in the related art uses passive devices for frequency compensation, the stability of the phase margin is poor, and under a large input current signal, a reverse pulse will appear in the output waveform. Summary of the Invention

[0005] In order to solve the above problems existing in the prior art, the present invention provides a fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation. The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0006] A fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation includes: a feedback resistor unit, a multipath frequency compensation core amplifier unit, a signal input end, and a signal output end. The multipath frequency compensation core amplifier unit includes a first amplifier stage, a second amplifier stage, a third amplifier stage, a first feedforward stage, and a second feedforward stage; wherein,

[0007] The multipath frequency compensation core amplifier unit comprises an input end and an output end, wherein the input end of the multipath frequency compensation core amplifier unit is connected to the signal input end, and the output end is connected to the signal output end;

[0008] The feedback resistor unit includes a first end and a second end. The first end of the feedback resistor unit is connected to the signal input end, and the second end is connected to the signal output end.

[0009] In one embodiment of the present invention, the input terminal of the first amplifier stage is connected to the signal input terminal, the output terminal of the first amplifier stage is connected to the input terminal of the second amplifier stage, the output terminal of the second amplifier stage is connected to the input terminal of the third amplifier stage, and the output terminal of the third amplifier stage is connected to the signal output terminal;

[0010] The first end of the first feedforward stage is connected to the signal input end, the second end of the first feedforward stage is connected to the signal output end, the first end of the second feedforward stage is connected to the signal input end, and the second end of the second feedforward stage is connected to the output end of the second amplifier stage.

[0011] In one embodiment of the present invention, the signal input terminal includes an in-phase signal input terminal and an inverted signal input terminal, and the signal output terminal includes an in-phase signal output terminal and an inverted signal output terminal.

[0012] In one embodiment of the present invention, the feedback resistor unit includes a first feedback resistor and a second feedback resistor;

[0013] A first end of the first feedback resistor is connected to the inverting signal input end, and a second end thereof is connected to the inverting signal output end;

[0014] A first end of the second feedback resistor is connected to the in-phase signal input end, and a second end of the second feedback resistor is connected to the inverting signal output end.

[0015] In one embodiment of the present invention, it further includes a power supply voltage signal terminal and a reference voltage signal terminal;

[0016] The first amplifier stage includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first resistor, a second resistor, a first current bias transistor +, a first node, a second node and a third node; wherein,

[0017] The gate of the first transistor is connected to the in-phase signal input terminal, the drain is connected to the first node, and the source is connected to the drain of the first current bias transistor;

[0018] The second transistor has a gate connected to the inverting signal input terminal, a drain connected to the second node, and a source connected to the drain of the first current bias transistor;

[0019] The gate of the third transistor is connected to the third node, the source is grounded, and the drain is connected to the first end of the first resistor;

[0020] The fourth transistor has a gate connected to the third node, a source connected to the ground, and a drain connected to the second end of the second resistor;

[0021] The second end of the first resistor and the first end of the second resistor are both connected to the third node;

[0022] The gate of the first current bias transistor is connected to the reference voltage signal terminal, and the source is connected to the power supply voltage signal terminal.

[0023] In one embodiment of the present invention, the second amplification stage includes a seventh transistor, an eighth transistor, a ninth transistor, a tenth transistor, a second current biasing transistor, a fourth node, and a fifth node; wherein,

[0024] The seventh transistor has a gate connected to the first node, a drain connected to the gate of the ninth transistor, and a source connected to the drain of the second current bias transistor;

[0025] The source of the ninth transistor is grounded, and the drain is connected to the fourth node;

[0026] The eighth transistor has a gate connected to the second node, a drain connected to the gate of the tenth transistor, and a source connected to the drain of the second current bias transistor;

[0027] The source of the tenth transistor is grounded, and the drain is connected to the fifth node.

[0028] In one embodiment of the present invention, the third amplification stage includes an eleventh transistor, a twelfth transistor, a thirteenth transistor, and a fourteenth transistor; wherein,

[0029] The gate of the eleventh transistor is connected to the gate of the ninth transistor, the source is grounded, and the drain is connected to the inverting signal output terminal;

[0030] The gate of the thirteenth transistor is connected to the in-phase signal input terminal, the drain is connected to the inverting signal output terminal, and the source is connected to the power supply voltage signal terminal;

[0031] The gate of the twelfth transistor is connected to the gate of the tenth transistor, the source is grounded, and the drain is connected to the in-phase signal output terminal;

[0032] The gate of the fourteenth transistor is connected to the inverting signal input terminal, the drain is connected to the non-inverting signal output terminal, and the source is connected to the power supply voltage signal terminal.

[0033] In one embodiment of the present invention, a third current biasing transistor is further included; the second feed-forward stage includes a fifth transistor and a sixth transistor; wherein,

[0034] The gate of the fifth transistor is connected to the in-phase signal input terminal, the drain is connected to the fifth node, and the source is connected to the drain of the third current bias transistor;

[0035] The gate of the sixth transistor is connected to the inverting signal input terminal, the drain is connected to the fourth node, and the source is connected to the drain of the third current bias transistor;

[0036] The gate of the third current bias transistor is connected to the reference voltage signal terminal, and the source is connected to the power supply voltage signal terminal.

[0037] In one embodiment of the present invention, the first feed-forward stage includes the thirteenth transistor and the fourteenth transistor.

[0038] In one embodiment of the present invention, the first transistor, the second transistor, the fifth transistor, the sixth transistor, the seventh transistor, the eighth transistor, the thirteenth transistor, the fourteenth transistor, the first current bias transistor, the second current bias transistor and the third current bias transistor are all P-type field effect transistors;

[0039] The third transistor, the fourth transistor, the ninth transistor, the tenth transistor, the eleventh transistor and the twelfth transistor are all N-type field effect transistors.

[0040] Compared with the prior art, the present invention has the following beneficial effects:

[0041] The present invention provides a fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation, comprising: a feedback resistor unit, a multipath frequency compensation core amplifier unit, a signal input end, and a signal output end, wherein the multipath frequency compensation core amplifier unit comprises a first amplifier stage, a second amplifier stage, a third amplifier stage, a first feedforward stage, and a second feedforward stage. In the present invention, the multipath frequency compensation core amplifier unit performs multipath feedforward compensation based on a three-stage amplifier structure, thereby improving the amplifier gain while improving the phase margin and realizing the function of a push-pull output stage, thereby enabling the transimpedance amplifier to drive the maximum output current of a silicon photomultiplier tube at low static power consumption without generating reverse pulses. This not only achieves frequency compensation without using a compensation capacitor, but also improves the -3-dB bandwidth of the transimpedance amplifier circuit while ensuring circuit stability.

[0042] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 1 is a schematic structural diagram of a fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation provided by an embodiment of the present invention;

[0044] Figure 2 1 is a schematic structural diagram of a multipath frequency compensation core amplifier unit provided by an embodiment of the present invention;

[0045] Figure 3 1 is a schematic structural diagram of a first feedback resistor and a second feedback resistor provided by an embodiment of the present invention;

[0046] Figure 4 1 is a schematic diagram of a circuit topology structure of a fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0047] The present invention will be further described in detail below with reference to specific examples, but the embodiments of the present invention are not limited thereto.

[0048] See Figure 1-2 The embodiment of the present invention provides a fully differential high bandwidth transimpedance amplifier based on multipath frequency compensation, comprising: a feedback resistor unit 100, a multipath frequency compensation core amplifier unit 200, a signal input terminal I IN and signal output terminal V OUT The multipath frequency compensation core amplifier 200 unit includes a first amplifier stage 210, a second amplifier stage 220, a third amplifier stage 230, a first feedforward stage 240 and a second feedforward stage 250; wherein,

[0049] The multipath frequency compensation core amplifier 200 unit includes an input end and an output end. The input end of the multipath frequency compensation core amplifier 200 unit is connected to the signal input end I IN Connect the output end of the amplifier to the signal output end;

[0050] The feedback resistor unit 100 includes a first end and a second end. The first end of the feedback resistor unit 100 is connected to the signal input end I IN The second end of the feedback resistor unit 100 is connected to the signal output end.

[0051] In this embodiment, the fully differential high bandwidth transimpedance amplifier based on multipath frequency compensation includes: a feedback resistor unit 100, a multipath frequency compensation core amplifier unit 200, a signal input terminal I IN and signal output terminal V OUT The input terminal of the multipath frequency compensation core amplifier 200 unit is connected to the signal input terminal I IN Connection, output terminal and signal output terminal V OUT The connection is used to increase the gain of the core amplifier, improve the -3-dB bandwidth performance of the transimpedance amplifier circuit, realize the function of the push-pull output stage, thereby improving the current driving capability of the circuit and outputting the signal from the signal output terminal V OUT Output.

[0052] Furthermore, the first terminal of the feedback resistor unit 100 is connected to the signal input terminal I INThe voltage and current negative feedback is introduced, and the input pole frequency of the multipath frequency compensation core amplifier 200 unit is reduced and the output pole frequency is increased, which is conducive to making the feedback loop meet the phase margin requirement, and the second end of the feedback resistor unit 100 is connected to the signal output terminal V OUT Output.

[0053] like Figure 2 As shown, the multipath frequency compensation core amplifier 200 unit includes a first amplifier stage 210, a second amplifier stage 220, a third amplifier stage 230, a first feedforward stage 240 and a second feedforward stage 250. The input terminal of the first amplifier stage 210 is connected to the signal input terminal I IN The output of the first amplifier stage 210 is connected to the input of the second amplifier stage 220, the output of the second amplifier stage 220 is connected to the input of the third amplifier stage 230, and the output of the third amplifier stage 230 is connected to the signal output terminal V OUT connect;

[0054] The first terminal of the first feedforward stage 240 is connected to the signal input terminal I IN Connect the second end of the first feedforward stage 240 to the signal output terminal V OUT Connect the first terminal of the second feedforward stage 250 to the signal input terminal I IN The second end of the second feedforward stage 250 is connected to the output end of the second amplifying stage 220 .

[0055] In this embodiment, the first amplifier stage 210 may include an amplifier stage g m1 , amplifier stage g m1 A resistor R is connected in parallel between the output terminal and the ground o1 and capacitor C1, the second amplifier stage 220 includes an amplifier stage g m2 , amplifier stage g m2 A resistor R is connected in parallel between the output terminal and the ground o2 and capacitor C2, the third amplifier stage 230 includes amplifier stage g m3 , amplifier stage g m3 A resistor R is connected in parallel between the output terminal and the ground o3 and capacitor C3. Optionally, the first feedforward stage 240 introduces a transconductance g mf2 , the second feedforward stage 250 introduces transconductance g mf1 .

[0056] like Figure 3 As shown, the signal input terminal I IN Including the in-phase signal input terminal I OP and the inverting signal input terminal I ON , signal output terminal V OUT Including the in-phase signal output terminal V OP and the inverting signal output terminal V ON .

[0057] The feedback resistor unit 100 includes a first feedback resistor R F1 and the second feedback resistor R F2 ;

[0058] The first feedback resistor R F1 The first end and the inverting signal input terminal I ON Connect the second end to the in-phase signal output terminal V OP connect;

[0059] The second feedback resistor R F2 The first end and the in-phase signal input terminal I OP Connect the second end to the inverting signal output terminal V ON connect.

[0060] Among them, the two pole frequencies introduced by the passive components in the feedback loop can be expressed as the input pole frequency ω pd and the output pole frequency ω p3 , as shown in formulas (1) and (2):

[0061]

[0062]

[0063] Where, ω pd is the input pole frequency, ω p3 is the output pole frequency, R o3 Represents the output resistance of the third amplifier stage output, R F Represents the feedback resistor introduced by the feedback resistor unit, C3 represents the capacitance to ground at the output of the third amplifier stage, C IN Indicates the capacitance of the signal input terminal to ground.

[0064] During the research, the inventors found that since the output impedance of the multipath frequency compensation core amplifier 200 unit is relatively high, the influence of the high output impedance of the amplifier unit on the input and output poles of the core amplifier unit needs to be considered when calculating the loop gain. F Under the action of p3 is moved to a higher frequency position, and at the same time, ω pd The frequency of the multipath frequency compensation core amplifier 200 is reduced, which helps the feedback loop meet the phase margin requirement. In addition, the pole position of the multipath frequency compensation core amplifier 200 unit also needs to be adjusted to ultimately meet the stability requirement.

[0065] In this embodiment, Figure 4 As shown, the fully differential high bandwidth transimpedance amplifier based on multipath frequency compensation also includes a power supply voltage signal terminal V DDand the reference voltage signal terminal V B ;

[0066] The first amplifier stage 210 includes a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a first resistor R1, a second resistor R2, a first current biasing transistor M B1 , a first node N1, a first node N2 and a third node N3; wherein,

[0067] The gate of the first transistor M1 is connected to the in-phase signal input terminal I OP The drain is connected to the first node N1, and the source is connected to the first current bias transistor M B1 The drain connection;

[0068] The gate of the second transistor M2 is connected to the inverting signal input terminal I ON The drain is connected to the first node N2, and the source is connected to the first current bias transistor M B1 The drain connection;

[0069] The third transistor M3 has a gate connected to the third node N3, a source connected to the ground, and a drain connected to the first end of the first resistor R1;

[0070] The fourth transistor M4 has a gate connected to the third node N3, a source connected to the ground, and a drain connected to the second end of the second resistor R2;

[0071] The second end of the first resistor R1 and the first end of the second resistor R2 are both connected to the third node N3;

[0072] The first current bias transistor M B1 The gate and reference voltage signal terminal V B Connect the source to the power supply voltage signal terminal V DD connect.

[0073] Optionally, the second amplifier stage 220 includes a seventh transistor M7, an eighth transistor M8, a ninth transistor M9, a tenth transistor M 10 , the second current bias transistor M B2 , the fourth node N4 and the fifth node N5; wherein,

[0074] The gate of the seventh transistor M7 is connected to the first node N1, the drain is connected to the gate of the ninth transistor M9, and the source is connected to the second current bias transistor M. B2 The drain connection;

[0075] The source of the ninth transistor M9 is grounded, and the drain is connected to the fourth node N4;

[0076] The gate of the eighth transistor M8 is connected to the first node N2, and the drain of the eighth transistor M8 is connected to the tenth transistor M 10The gate is connected to the source of the second current bias transistor M B2 The drain connection;

[0077] tenth transistor M 10 The source is grounded, and the drain is connected to the fifth node N5.

[0078] Optionally, the third amplifier stage 230 includes an eleventh transistor M 11 , the twelfth transistor M 12 , the thirteenth transistor M 13 and the fourteenth transistor M 14 ;in,

[0079] The eleventh transistor M 11 The gate of the ninth transistor M9 is connected to the gate, the source is grounded, and the drain is connected to the inverting signal output terminal V ON connect;

[0080] The thirteenth transistor M 13 The gate and the in-phase signal input terminal I OP Connect the drain to the inverting signal output terminal V ON Connect the source to the power supply voltage signal terminal V DD connect;

[0081] The twelfth transistor M 12 The gate of the tenth transistor M 10 The gate is connected to the ground, the source is grounded, and the drain is connected to the in-phase signal output terminal V OP connect;

[0082] The fourteenth transistor M 14 The gate and the inverting signal input terminal I ON Connect the drain to the in-phase signal output terminal V OP Connect the source to the power supply voltage signal terminal V DD connect.

[0083] Optionally, the fully differential high bandwidth transimpedance amplifier based on multipath frequency compensation further includes a third current bias transistor M B3 The second feed-forward stage 250 includes a fifth transistor M5 and a sixth transistor M6; wherein,

[0084] The gate of the fifth transistor M5 is connected to the in-phase signal input terminal I OP The drain is connected to the fifth node N5, and the source is connected to the third current bias transistor M B3 The drain connection;

[0085] The gate of the sixth transistor M6 is connected to the inverting signal input terminal I ON The drain is connected to the fourth node N4, and the source is connected to the third current bias transistor M B3The drain connection;

[0086] The third current bias transistor M B3 The gate and reference voltage signal terminal V B Connect the source to the power supply voltage signal terminal V DD connect.

[0087] The first feed-forward stage 240 includes a thirteenth transistor M 13 and the fourteenth transistor M 14 .

[0088] It should be understood that the multipath frequency compensation core amplifier unit 200, as the core amplifier unit of the above-mentioned transimpedance amplifier, can perform multipath feedforward compensation based on a three-stage structure. As shown in the figure, the first amplifier stage 210 is composed of a differential amplifier stage with a current source as the load, using the first resistor R1 and the second resistor R2 as local common-mode feedback, and the fifth transistor M5 and the sixth transistor M6 forming the second feedforward stage 250. In the second stage, we use a diode-connected NMOS transistor as the load to reduce the node time constant. The rail-to-rail push-pull output stage is composed of the eleventh transistor M 11 , the twelfth transistor M 12 , the thirteenth transistor M 13 and the fourteenth transistor M 14 Therefore, the fully differential high-bandwidth transimpedance amplifier circuit based on multipath frequency compensation proposed in the present invention can drive the maximum output current of SiPM (Silicon photomultiplier) at low static power consumption without reverse pulse.

[0089] In addition, this embodiment also achieves frequency compensation without using compensation capacitors. Specifically, since the first feedforward stage 240 introduces a left half plane zero while improving the core amplifier circuit gain, see formulas (3), (4), and (5) for details. Formulas (3) to (5) are the transfer functions of the core amplifier. At the same time, the second feedforward stage 250 is used to reduce the Q value of the left half plane complex zero introduced by the first feedforward stage 240. At the same frequency, the left half plane complex zero pair with a lower Q value can more effectively offset the phase shift introduced by the pole, thereby improving the phase margin. See formulas (6) and (7) for details. Formula (6) is the Q value of the left half plane complex zero when the second feedforward stage 250 is included, and formula (7) is the Q value of the left half plane complex zero when the second feedforward stage 250 is not included. Therefore, compared with the traditional passive frequency compensation technology, the transimpedance amplifier provided by the present invention can improve the -3-dB bandwidth of the transimpedance amplifier while ensuring circuit stability, thereby improving the measurement accuracy of the laser radar receiver.

[0090]

[0091] a=g mf2 R o3 (R o1 C1+R o2 C2)+g mf1 R o2 g m3 R o3 R o1 C1 (4)

[0092] b=A+g mf2 R o3 +g mf1 R o2 g m3 R o3 (5)

[0093]

[0094]

[0095] Among them, A V (s) represents the transfer function of the fully differential high-bandwidth transimpedance amplifier circuit based on multipath frequency compensation proposed in the present invention, C1 represents the capacitance of the output end of the first amplifier stage to ground, C2 represents the capacitance of the output end of the second amplifier stage to ground, A represents the product of the gains of the first amplifier stage, the second amplifier stage, and the third amplifier stage, ζ w / gmf1 represents the Q value of the left half plane complex zero when the second feedforward stage 250 is included, ζ w / o gmf1 ∑ ∑ i = ∑ ...

[0096] It should be noted that, in this embodiment, the first transistor M1, the second transistor M2, the fifth transistor M5, the sixth transistor M6, the seventh transistor M7, the eighth transistor M8, the thirteenth transistor, the fourteenth transistor M 14 , the first current bias transistor M B1 , the second current bias transistor M B2 and the third current biasing transistor M B3 All are P-type field effect transistors;

[0097] The third transistor M3, the fourth transistor M4, the ninth transistor M9, the tenth transistor M 10 , the eleventh transistor M 11 and the twelfth transistor M 12 Both are N-type field effect transistors.

[0098] It can be seen from the above embodiments that the beneficial effects of the present invention are:

[0099] The present invention provides a fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation, comprising: a feedback resistor unit, a multipath frequency compensation core amplifier unit, a signal input end, and a signal output end, wherein the multipath frequency compensation core amplifier unit comprises a first amplifier stage, a second amplifier stage, a third amplifier stage, a first feedforward stage, and a second feedforward stage. In the present invention, the multipath frequency compensation core amplifier unit performs multipath feedforward compensation based on a three-stage amplifier structure, thereby improving the amplifier gain while improving the phase margin and realizing the function of a push-pull output stage, thereby enabling the transimpedance amplifier to drive the maximum output current of a silicon photomultiplier tube at low static power consumption without generating reverse pulses. This not only achieves frequency compensation without using a compensation capacitor, but also improves the -3-dB bandwidth of the transimpedance amplifier circuit while ensuring circuit stability.

[0100] In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0101] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Furthermore, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0102] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification.

[0103] Although the present application is described herein in conjunction with various embodiments, in the process of implementing the claimed application, those skilled in the art can understand and implement other changes to the disclosed embodiments by reviewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple situations. A single processor or other unit can implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0104] The above is a further detailed description of the present invention in conjunction with specific preferred embodiments, and the specific implementation of the present invention should not be considered to be limited to these descriptions. For those skilled in the art of the present invention, without departing from the concept of the present invention, several simple deductions or substitutions can be made, which should be considered to fall within the scope of protection of the present invention.

Claims

1. A fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation, characterized in that: include: A feedback resistor unit, a multipath frequency compensation core amplifier unit, a signal input terminal and a signal output terminal, wherein the multipath frequency compensation core amplifier unit includes a first amplifier stage, a second amplifier stage, a third amplifier stage, a first feedforward stage and a second feedforward stage; wherein, The multipath frequency compensation core amplifier unit comprises an input end and an output end, wherein the input end of the multipath frequency compensation core amplifier unit is connected to the signal input end, and the output end is connected to the signal output end; The feedback resistor unit includes a first end and a second end, the first end of the feedback resistor unit is connected to the signal input end, and the second end is connected to the signal output end; The fully differential high-bandwidth transimpedance amplifier further includes a power supply voltage signal terminal; the signal input terminal includes a non-phase signal input terminal and an inverting signal input terminal; the signal output terminal includes a non-phase signal output terminal and an inverting signal output terminal; the first amplifier stage includes a first node and a second node; The second amplifier stage includes a seventh transistor, an eighth transistor, a ninth transistor, a tenth transistor, a second current bias transistor, a fourth node, and a fifth node; wherein the gate of the seventh transistor is connected to the first node, the drain is connected to the gate of the ninth transistor, and the source is connected to the drain of the second current bias transistor; the source of the ninth transistor is grounded, and the drain is connected to the fourth node; the gate of the eighth transistor is connected to the second node, the drain is connected to the gate of the tenth transistor, and the source is connected to the drain of the second current bias transistor; the source of the tenth transistor is grounded, and the drain is connected to the fifth node; The third amplifier stage includes an eleventh transistor, a twelfth transistor, a thirteenth transistor and a fourteenth transistor; wherein, the gate of the eleventh transistor is connected to the gate of the ninth transistor, the source is grounded, and the drain is connected to the inverting signal output terminal; the gate of the thirteenth transistor is connected to the in-phase signal input terminal, the drain is connected to the inverting signal output terminal, and the source is connected to the power supply voltage signal terminal; the gate of the twelfth transistor is connected to the gate of the tenth transistor, the source is grounded, and the drain is connected to the in-phase signal output terminal; the gate of the fourteenth transistor is connected to the inverting signal input terminal, the drain is connected to the in-phase signal output terminal, and the source is connected to the power supply voltage signal terminal.

2. The fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation according to claim 1, characterized in that: The input end of the first amplifier stage is connected to the signal input end, the output end of the first amplifier stage is connected to the input end of the second amplifier stage, the output end of the second amplifier stage is connected to the input end of the third amplifier stage, and the output end of the third amplifier stage is connected to the signal output end; The first end of the first feedforward stage is connected to the signal input end, the second end of the first feedforward stage is connected to the signal output end, the first end of the second feedforward stage is connected to the signal input end, and the second end of the second feedforward stage is connected to the output end of the second amplifier stage.

3. The fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation according to claim 1, wherein: The feedback resistor unit includes a first feedback resistor and a second feedback resistor; A first end of the first feedback resistor is connected to the inverting signal input end, and a second end thereof is connected to the inverting signal output end; A first end of the second feedback resistor is connected to the in-phase signal input end, and a second end of the second feedback resistor is connected to the inverting signal output end.

4. The fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation according to claim 1, wherein: Also includes a reference voltage signal terminal; The first amplifier stage further includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first resistor, a second resistor, a first current bias transistor and a third node; wherein, The gate of the first transistor is connected to the in-phase signal input terminal, the drain is connected to the first node, and the source is connected to the drain of the first current bias transistor; The second transistor has a gate connected to the inverting signal input terminal, a drain connected to the second node, and a source connected to the drain of the first current bias transistor; The gate of the third transistor is connected to the third node, the source is grounded, and the drain is connected to the first end of the first resistor; The fourth transistor has a gate connected to the third node, a source connected to the ground, and a drain connected to the second end of the second resistor; The second end of the first resistor and the first end of the second resistor are both connected to the third node; The gate of the first current bias transistor is connected to the reference voltage signal terminal, and the source is connected to the power supply voltage signal terminal.

5. The fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation according to claim 4, characterized in that: Also includes a third current bias transistor; the second feed-forward stage includes a fifth transistor and a sixth transistor; wherein, The gate of the fifth transistor is connected to the in-phase signal input terminal, the drain is connected to the fifth node, and the source is connected to the drain of the third current bias transistor; The gate of the sixth transistor is connected to the inverting signal input terminal, the drain is connected to the fourth node, and the source is connected to the drain of the third current bias transistor; The gate of the third current bias transistor is connected to the reference voltage signal terminal, and the source is connected to the power supply voltage signal terminal.

6. The fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation according to claim 5, characterized in that: The first feed-forward stage includes the thirteenth transistor and the fourteenth transistor.

7. The fully differential high-bandwidth transimpedance amplifier based on multipath frequency compensation according to claim 6, characterized in that: The first transistor, the second transistor, the fifth transistor, the sixth transistor, the seventh transistor, the eighth transistor, the thirteenth transistor, the fourteenth transistor, the first current bias transistor, the second current bias transistor and the third current bias transistor are all P-type field effect transistors; The third transistor, the fourth transistor, the ninth transistor, the tenth transistor, the eleventh transistor and the twelfth transistor are all N-type field effect transistors.

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