Gas sensor
By using a vertically designed OTFT device and constructing nanochannels with OSC and insulating layers, the low current output and instability problems of traditional OFETs are solved, realizing a gas sensor with high current density and stability under low voltage, which is suitable for smart cards and flat panel displays.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CORNING INC
- Filing Date
- 2020-07-31
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional organic field-effect transistors (OFETs) suffer from low current output and instability, especially at low voltages where it is difficult to achieve high current density operation. They also have low carrier mobility, which limits their frequency and makes them susceptible to oxygen and chemical substances.
Organic thin-film transistors (OTFTs) with a vertical design structure include a substrate, a current collector layer, an emitter layer, a metal grid, and an organic semiconductor layer. By constructing vertical nanochannels to absorb gases released from the skin, and utilizing the OSC layer and an insulating layer to form a highly efficient gas sensor, high current density and stability are achieved.
A high current density OTFT device is achieved at low voltage, which improves carrier mobility and sensor stability, and can effectively analyze gases released from the skin. It is suitable for flexible electronic devices such as smart cards, security tags and flat panel displays.
Smart Images
Figure CN114062524B_ABST