An organic optoelectronic synaptic device and its sound recognition method

Abstract

The present invention discloses an organic optoelectronic synaptic device, which includes a conductive base layer, a hole transport layer, an active layer, an electron transport layer and a cathode. The present invention discloses a method for sound recognition based on the organic optoelectronic synaptic device, which comprises the following steps: simulating the change of sound loudness by adjusting the input voltage of the organic optoelectronic synaptic device; simulating the change of sound pitch by adjusting the optical input frequency of the organic optoelectronic synaptic device; simulating the change of sound timbre by adjusting the input light intensity of the organic optoelectronic synaptic device; sound recognition: establishing a quantitative relationship between the discrimination factor and the postsynaptic current: realizing the recognition of sound through the I~ζ quantitative relationship. The present invention realizes the perception of the loudness, pitch and timbre of sound by using the organic optoelectronic synaptic device.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic synaptic devices, and particularly to an organic optoelectronic synaptic device and a sound recognition method thereof. Background Art

[0002] Humans interact with the environment and obtain external information by perceiving external stimuli (such as light, sound, pressure, and chemicals) and responding to them. Among external stimuli, due to the acoustic characteristics of sound, including volume, pitch, and timbre, rich information can be transmitted. The human brain consists of approximately 10 11 neurons and is interconnected by 10 15 synapses, which has huge parallelism, extremely low power consumption, and excellent fault tolerance. Due to its extensive connectivity, hierarchy, complex learning rules, and neural plasticity, the brain can perform different complex tasks simultaneously. Against the backdrop of the impending end of the von Neumann bottleneck, Moore's law, and the breakdown of Dennard scaling, there is an urgent need to develop new circuit building blocks and computing models similar to the structure and function of the human brain in order to achieve processing in memory capacity.

[0003] In the era of artificial intelligence, using organic optoelectronic synapses to simulate the learning and memory capabilities of the human brain is necessary for the development of future advanced bionic electronic devices and humanoid robots. Currently, artificial van der Waals hybrid synapses are used for acoustic pattern recognition, and through training and inference simulation, the feasibility of the development of hybrid synapses towards hardware neural networks has been proven. Numerous synaptic devices control the signal output of the synaptic device by adjusting the input conditions of the device. By applying it to acoustic patterns, the information of sound is processed to obtain the content, information, and expressed emotions of the sound. However, the research on perceiving the volume, pitch, and timbre of sound based on organic optoelectronic synaptic devices has not been realized. Summary of the Invention

[0004] The purpose of the present invention is to overcome the deficiencies of the prior art and provide an organic optoelectronic synaptic device, which can realize changing the amplitude, frequency, and waveform of the output postsynaptic current by adjusting the input conditions of the organic optoelectronic synaptic device, including voltage (V), frequency (f), and light intensity (P), so as to correspond to the amplitude, frequency, and waveform of sound, and further simulate the loudness, pitch, and timbre of sound.

[0005] The purpose of the present invention is to provide a sound recognition method based on an organic optoelectronic synaptic device.

[0006] The present invention solves its technical problems through the following technical solutions:

[0007] An organic optoelectronic synaptic device, characterized in that it includes a conductive base layer, a hole transport layer, an active layer, an electron transport layer, and a cathode.

[0008] Moreover, the conductive base layer is made of indium tin oxide (ITO) glass.

[0009] Moreover, the hole transport layer is made of poly(3,4-ethylenedioxythiophene) or polystyrene sulfonate or a combination material thereof.

[0010] Moreover, the active layer is prepared into a film by spin-coating a mixed solution of a donor material and an acceptor material. The donor material is any one or a combination of PM6, D18, or P3HT, and the acceptor material is any one or a combination of Y6, BSeC8-4F, or PC71BM.

[0011] The donor is any one or a combination of poly[1-(5-(4,8-bis(5-(2-ethylhexyl)-4-fluorothiophen-2-yl)-6-methylbenzo[1,2-b:4,5-b']dithiophen-2-yl)thiophen-2-yl)-5,7-bis(2-ethylhexyl)-3-(5-methylthiophen-2-yl)-4H,8H-benzo[1,2-c:4,5-c']dithiophene-4,8-dione], poly[5-(5-(4,8-bis(5-(2-ethylhexyl)-4-fluorothiophen-2-yl)-6-methylbenzo[1,2-b:4,5-b']dithiophen-2-yl)-4-(2-butyryl)thiophen-2-yl)-8-(4-(2-butyryl)-5-methylthiophen-2-yl)dithieno[3',2':3,4;2'',3'':5,6]benzo[1,2-c][1,2,5]thiadiazole], or poly(3-hexylthiophene); the acceptor material is any one or a combination of 2,2'-((2Z,2'Z)-(12,13-di)(2-ethylhexyl)-3,9-di,undecyl-12,13-dihydro-[1,2,5]thiadiazolo[3,4-e]thieno[2'',3'':4',5']thienyl[2',3':4,5]pyrrolo[3,2-g]thienyl[2',3':4,5]thienyl[3,2-b]indole-2,10-diacyl)bis(formyl sulfoxide)bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diyl sulfoxide), 2,2'-((2Z,2'Z)-(12,13-di)(3-ethylhexyl)-3,9-di,octyl-12,13-dihydro-[1,2,5]selenadiazolo[3,4-e]thieno[2'',3'':4',5']thienyl[2',3':4,5]pyrrolo[3,2-g]thienyl[2',3':4,5]thienyl[3,2-b]indole-2,10-diacyl)bis(formyl sulfoxide)bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diyl sulfoxide), or [6,6]-phenyl-C70-butyric acid methyl ester.

[0012] Moreover, the electron transport layer is made of an amine-functionalized perylene diimide (PDINN) material.

[0013] Moreover, the cathode is made of silver material.

[0014] A sound recognition method based on the organic optoelectronic synaptic device according to claim 1, characterized in that: the sound recognition is through the recognition of the three elements of sound: loudness, pitch, and timbre, including the following steps:

[0015] 1) Simulating the change in sound loudness by adjusting the input voltage of the organic optoelectronic synaptic device: Based on the characteristic that the output signal of the organic optoelectronic synaptic device changes with the input voltage, by adjusting the input voltage (V) of the organic optoelectronic synaptic device, the postsynaptic current output by the organic optoelectronic synaptic device changes in amplitude longitudinally, corresponding to the change in amplitude, thereby realizing the simulation of the change in sound loudness;

[0016] 2) Simulating the change in sound pitch by adjusting the optical input frequency of the organic optoelectronic synaptic device: By adjusting the frequency (f) of the optical input of the organic optoelectronic synaptic device, the frequency of the postsynaptic current output by the organic optoelectronic synaptic device changes, corresponding to the change in sound frequency, thereby realizing the simulation of the change in sound pitch;

[0017] 3) Simulating the change in sound timbre by adjusting the input light intensity of the organic optoelectronic synaptic device: By adjusting the input light intensity (P) of the organic optoelectronic synaptic device, the waveform of the postsynaptic current output by the organic optoelectronic synaptic device changes, corresponding to the change in sound waveform, thereby realizing the simulation of the change in sound timbre;

[0018] 4) Sound recognition: Proposing the concept of a discrimination factor (ζ) Establishing a quantitative relationship between the discrimination factor and the postsynaptic current: I = 1.4211exp(ζ / 0.6290) + 3.7979;

[0019] The postsynaptic current is the I value at 5 s after light withdrawal = I light -I dark ;

[0020] By adjusting the voltage (V), frequency (f), and light intensity (P) input to the organic optoelectronic synaptic device, corresponding to simulating the loudness, pitch, and timbre of sound, obtaining the corresponding discrimination factor (ζ) for the voltage V, frequency f, and light intensity P of each sound, thereby corresponding to the corresponding postsynaptic current I value. During the sound recognition process, stimulated by the postsynaptic current I, the ζ value can be obtained through the quantitative relationship I = 1.4211exp(ζ / 0.6290) + 3.7979, thereby corresponding to the corresponding sound to achieve sound recognition.

[0021] The advantages and beneficial effects of the present invention are:

[0022] 1. The organic optoelectronic synaptic device of the present invention includes a conductive base layer, a hole transport layer, an active layer, an electron transport layer, and a cathode, and realizes sound recognition based on this organic optoelectronic synaptic device.

[0023] 2. The method for sound recognition based on the organic optoelectronic synaptic device of the present invention adjusts the amplitude change, current frequency, and current waveform in the longitudinal direction of the postsynaptic current by changing the input voltage, frequency, and light intensity of the organic optoelectronic synaptic device, so as to correspond to the amplitude, frequency, and waveform of the sound, and further simulate the loudness, pitch, and timbre of the sound.

[0024] 3. In the method for sound recognition based on the above-mentioned organic optoelectronic synaptic device of the present invention, the concept of discrimination factor (ζ) is proposed, so as to establish a quantitative relationship between the input voltage, frequency, light intensity and the postsynaptic current, so as to achieve the purpose of sound recognition. Brief Description of the Drawings

[0025] Figure 1 is a schematic structural diagram of the organic optoelectronic synaptic device of the present invention;

[0026] Figure 2 is a schematic diagram showing the change of the amplitude of the postsynaptic current of the organic optoelectronic synaptic device of the present invention with the input voltage;

[0027] Figure 3 is a schematic diagram showing the change of the frequency of the postsynaptic current of the organic optoelectronic synaptic device of the present invention with the light input frequency;

[0028] Figure 4 is a schematic diagram showing the change of the waveform of the postsynaptic current of the organic optoelectronic synaptic device of the present invention with the input light intensity;

[0029] Figure 5 is a schematic diagram of the quantitative relationship of sound recognition of the organic optoelectronic synaptic device of the present invention.

[0030] In the figure:

[0031] 1 - conductive base layer, 2 - hole transport layer, 3 - active layer, 4 - electron transport layer, 5 - cathode. Detailed Embodiments

[0032] The present invention will be further described in detail below through specific embodiments. The following embodiments are only descriptive and not restrictive, and the protection scope of the present invention cannot be limited thereby.

[0033] An organic optoelectronic synaptic device, as Figure 1 shown, which includes a conductive base layer 1, a hole transport layer 2, an active layer 3, an electron transport layer 4, and a cathode 5.

[0034] The conductive base layer is made of indium tin oxide (ITO) glass.

[0035] The hole transport layer is made of poly(3,4-ethylenedioxythiophene) or polystyrene sulfonate or a combination of them.

[0036] The active layer is prepared by spin-coating a mixed solution of a donor material and an acceptor material into a film. The donor material is any one or a combination of PM6, D18, or P3HT, and the acceptor material is any one or a combination of Y6, BSeC8-4F, or PC71BM.

[0037] The donor is any one or a combination of poly[1-(5-(4,8-bis(5-(2-ethylhexyl)-4-fluorothiophen-2-yl)-6-methylbenzo[1,2-b:4,5-b']dithiophen-2-yl)thiophen-2-yl)-5,7-bis(2-ethylhexyl)-3-(5-methylthiophen-2-yl)-4H,8H-benzo[1,2-c:4,5-c']dithiophene-4,8-dione] (PM6), poly[5-(5-(4,8-bis(5-(2-ethylhexyl)-4-fluorothiophen-2-yl)-6-methylbenzo[1,2-b:4,5-b']dithiophen-2-yl)-4-(2-butyryl)thiophen-2-yl)-8-(4-(2-butyryl)-5-methylthiophen-2-yl)dithieno[3',2':3,4;2'',3'':5,6]benzo[1,2-c][1,2,5]thiadiazole] (D18), or poly(3-hexylthiophene) (P3HT); the acceptor material is any one or a combination of 2,2'-((2Z,2'Z)-(12,13-di)(2-ethylhexyl)-3,9-di,undecyl-12,13-dihydro-[1,2,5]thiadiazolo[3,4-e]thieno[2'',3'':4',5']thiopheno[2',3':4,5]pyrrolo[3,2-g]thiopheno[2',3':4,5]thiopheno[3,2-b]indole-2,10-dicarbonyl)bis(methanesulfonyl)bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene) (Y6), 2,2'-((2Z,2'Z)-(12,13-di)(3-ethylhexyl)-3,9-di,octyl-12,13-dihydro-[1,2,5]selenadiazolo[3,4-e]thieno[2'',3'':4',5']thiopheno[2',3':4,5]pyrrolo[3,2-g]thiopheno[2',3':4,5]thiopheno[3,2-b]indole-2,10-dicarbonyl)bis(methanesulfonyl)bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene) (BSeC8-4F), [6,6]-phenyl-C70-butyric acid methyl ester (PC71BM).

[0038] The electron transport layer is made of an amine-functionalized perylene diimide (PDINN) material.

[0039] The cathode is made of silver material.

[0040] A preparation method of an organic optoelectronic synaptic device includes the following steps:

[0041] 1) Prepare a conductive substrate layer: Use indium tin oxide (ITO) glass (sheet resistance is about 20 ohms per square, with a specification of 15 mm × 15 mm) as the conductive substrate layer. The cleaned ITO glass is dried under a nitrogen gun and irradiated under a UVO ultraviolet ozone lamp for 20 - 30 min.

[0042] 2) Prepare a hole transport layer: Spin-coat poly(3,4-ethylenedioxythiophene), polystyrene sulfonate or a combination of them on the conductive substrate layer. After annealing at 150 °C for 15 min, a hole transport layer is formed and then transferred to a glove box.

[0043] 3) Prepare an active layer: Dissolve the donor material and the acceptor material in a chloroform solvent according to a weight ratio of 1:1 and spin-coat it on the hole transport layer. After annealing at 100 °C for 10 min to form a film, an active layer is formed.

[0044] 4) Prepare an electron transport layer: Spin-coat a 1 mg / mL PDINN methanol solution on the active layer at 3000 rpm to form an electron transport layer.

[0045] 5) Prepare a cathode. Use vacuum evaporation to deposit silver material on the electron transport layer to form a cathode.

[0046] A sound recognition method based on an organic optoelectronic synaptic device includes the following steps:

[0047] 1) Simulate the change in sound loudness by adjusting the input voltage of the organic optoelectronic synaptic device: Based on the characteristic that the output signal of the organic optoelectronic synaptic device changes with the input voltage V, as Figure 2 shown, by adjusting the input voltage of the organic optoelectronic synaptic device, the postsynaptic current output by the organic optoelectronic synaptic device changes in amplitude longitudinally, corresponding to the change in amplitude, so as to realize simulating the change in sound loudness.

[0048] 2) Simulate the change in sound pitch by adjusting the optical input frequency of the organic optoelectronic synaptic device: As Figure 3 shown, by adjusting the optical input frequency of the organic optoelectronic synaptic device, the frequency of the postsynaptic current output by the organic optoelectronic synaptic device changes, corresponding to the change in sound frequency, so as to realize simulating the change in sound pitch.

[0049] 3) Simulate the change of sound timbre by adjusting the input light intensity of the organic optoelectronic synaptic device: For example, Figure 4 As shown, by adjusting the input light intensity of the organic optoelectronic synaptic device, the waveform of the postsynaptic current output by the organic optoelectronic synaptic device changes, corresponding to the change of the sound waveform, thereby realizing the simulation of the change of sound timbre;

[0050] Therefore, by adjusting the input voltage (V), frequency (f), and light intensity (P) of the organic optoelectronic synaptic device, the changes in the loudness, pitch, and timbre of the sound are simulated.

[0051] Figure 5 This is a schematic diagram of the quantitative relationship for sound recognition by the organic optoelectronic synaptic device of the present invention, and the concept of discrimination factor (ζ) is proposed Establish the quantitative relationship between the discrimination factor and the postsynaptic current (the I value at 5 s after light off = I light -I dark ): I = 1.4211exp(ζ / 0.6290) + 3.7979;

[0052] During the sound recognition process, by adjusting the input voltage (V), frequency (f), and light intensity (P) of the device, the loudness, pitch, and timbre of the sound can be simulated respectively. As shown in Table 1, three voltages (1.0 V, 1.1 V, 1.2 V), three frequencies (0.3 Hz, 0.5 Hz, 1.0 Hz), and three light intensities (13.87 mW / cm 2 , 61.50 mW / cm 2 , 126.18 mW / cm 2 ) are listed respectively. Selecting one V, f, and P respectively constitutes the three elements of sound, loudness, pitch, and timbre, corresponding to one sound, so as to achieve the purpose of simulating the sound with the input conditions (V, f, P) of the device. Table 1 lists 7 sounds simulated under several conditions and names them Sound 1 - 7.

[0053] Define the discrimination factor (ζ) through the input V, f, and P of the device, and establish the quantitative relationship of I~ζ through function fitting ( Figure 5 ). During the sound recognition process, the sound stimulus will generate a corresponding postsynaptic current I. The ζ value can be obtained through the quantitative relationship I = 1.4211exp(ζ / 0.6290) + 3.7979, so as to correspond to the corresponding sound, achieving the recognition of the 7 sounds in Table 1.

[0054] Table 1 Modulation of sound signals by voltage, frequency, and light intensity input signals of the organic optoelectronic synaptic device

[0055]

[0056] Although embodiments of the present invention and the accompanying drawings are disclosed for illustrative purposes, those skilled in the art will understand that: various substitutions, changes, and modifications are possible without departing from the spirit and scope of the present invention and the appended claims. Therefore, the scope of the present invention is not limited to the content disclosed in the embodiments and the drawings.

Claims

1. A method for sound recognition of an organic optoelectronic synaptic device, characterized in that: It includes a conductive base layer, a hole transport layer, an active layer, an electron transport layer and a cathode; The sound recognition is through the recognition of the three elements of sound: loudness, pitch, and timbre, including the following steps: 1) Simulate the change in sound loudness by adjusting the input voltage of the organic optoelectronic synaptic device: Based on the characteristic that the output signal of the organic optoelectronic synaptic device changes with the input voltage, by adjusting the input voltage V of the organic optoelectronic synaptic device, the amplitude of the postsynaptic current output by the organic optoelectronic synaptic device changes longitudinally, corresponding to the change in amplitude, so as to realize the simulation of the change in sound loudness; 2) Simulate the change in sound pitch by adjusting the optical input frequency of the organic optoelectronic synaptic device: By adjusting the frequency f of the optical input of the organic optoelectronic synaptic device, the frequency of the postsynaptic current output by the organic optoelectronic synaptic device changes, corresponding to the change in sound frequency, so as to realize the simulation of the change in sound pitch; 3) Simulate the change in sound timbre by adjusting the input light intensity of the organic optoelectronic synaptic device: By adjusting the input light intensity P of the organic optoelectronic synaptic device, the waveform of the postsynaptic current output by the organic optoelectronic synaptic device changes, corresponding to the change in sound waveform, so as to realize the simulation of the change in sound timbre; 4) Voice recognition: The concept of discrimination factor is proposed. ζ concept ζ = , and a quantitative relationship between the discrimination factor and the postsynaptic current is established: I = 1.4211exp( ζ / 0.6290) + 3.7979; The postsynaptic current is the I value at 5 s after light withdrawal = I light -I dark ; By adjusting the input voltage V, frequency f, and light intensity P of the organic optoelectronic synaptic device, the loudness, pitch, and timbre of the analog sound are correspondingly simulated, and the discrimination factors corresponding to the voltage V, frequency f, and light intensity P of each sound are obtained. ζ , thereby corresponding to the corresponding postsynaptic current I value. During the sound recognition process, stimulated by the postsynaptic current I, through the quantitative relationship I = 1.4211exp( ζ / 0.6290)+3.7979, the ζ value can be obtained, thereby corresponding to the corresponding sound to achieve sound recognition.

2. The method for sound recognition of the organic optoelectronic synaptic device according to claim 1: characterized in that: The conductive base layer is made of indium tin oxide (ITO) glass.

3. The method for sound recognition of the organic optoelectronic synaptic device according to claim 1: characterized in that: The hole transport layer is made of poly(3,4-ethylenedioxythiophene) or polystyrene sulfonate or a combination material thereof.

4. The method for sound recognition of the organic optoelectronic synaptic device according to claim 1: characterized in that: The active layer is prepared into a film by spin-coating a mixed solution of a donor material and a receptor material. The donor material is any one or a combination of PM6, D18, or P3HT, and the receptor material is any one or a combination of Y6, BSeC8-4F, PC71BM; The donor is any one or a combination thereof selected from poly[1-(5-(4,8-bis(5-(2-ethylhexyl)-4-fluorothiophen-2-yl)-6-methylbenzo[1,2-b:4,5-b']dithiophen-2-yl)thiophen-2-yl)-5,7-bis(2-ethylhexyl)-3-(5-methylthiophen-2-yl)-4H,8H-benzo[1,2-c:4,5-c']dithiophene-4,8-dione], poly[5-(5-(4,8-bis(5-(2-ethylhexyl)-4-fluorothiophen-2-yl)-6-methylbenzo[1,2-b:4,5-b']dithiophen-2-yl)-4-(2-butanoyl)thiophen-2-yl)-8-(4-(2-butanoyl)-5-methylthiophen-2-yl)dithieno[3',3,4:2',3':5,6]benzo[1,2-c][1,2,5]thiadiazole], or poly(3-hexylthiophene); the acceptor material is any one or a combination thereof selected from 2,2'-((2Z,2'Z)-(12,13-di)(2-ethylhexyl)-3,9-di,undecyl-12,13-dihydro-[1,2,5]thiadiazolo[3,4-e]thieno[2,3':4',5']thieno[2',3':4,5]pyrrolo[3,2-g]thieno[2',3':4,5]thieno[3,2-b]indole-2,10-diacyl)bis(methanesulfoxide)bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene), 2,2'-((2Z,2'Z)-(12,13-di)(3-ethylhexyl)-3,9-di,octyl-12,13-dihydro-[1,2,5]selenadiazolo[3,4-e]thieno[2,3':4',5']thieno[2',3':4,5]pyrrolo[3,2-g]thieno[2',3':4,5]thieno[3,2-b]indole-2,10-diacyl)bis(methanesulfoxide)bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene), [6,6]-phenyl-C70-butanoate methyl ester.

5. The method for sound recognition of the organic optoelectronic synaptic device according to claim 1: It is characterized in that: The electron transport layer is made of an amine-functionalized perylene diimide PDINN material.

6. The method for sound recognition of the organic optoelectronic synaptic device according to claim 1: It is characterized in that: The cathode is made of silver material.

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