Cavity cleaning method for substrate processing equipment

Abstract

A chamber cleaning method according to an exemplary embodiment of the present invention includes a chamber stabilization process for transferring a substrate out of a chamber and processing the interior of the chamber. A thin film deposition process has been completed on the substrate. The chamber stabilization process includes a cleaning process and a coating process. The cleaning process is used to inject a cleaning gas into the chamber and erode and clean a plurality of byproducts generated by the thin film deposition process. The coating process is used to inject a gas containing at least one of aluminum (Al), zirconium (Zr) and hafnium (Hf) into the chamber and generate a protective film on an inner wall of the chamber and at least one surface of a plurality of components installed in the chamber.

Description

Technical Field

[0001] The invention relates to a cavity cleaning method for substrate processing equipment, and in particular to a cavity cleaning method including a stable process for preventing the interior of the cavity from being damaged. Background Art

[0002] Generally, semiconductor devices are manufactured by depositing various materials in the form of thin films on a substrate and patterning the resultant. To this end, various stages of processes that are different from each other are performed, such as a deposition process, an etching process, a cleaning process, and a drying process. Here, the deposition process is performed to form a thin film having properties required for a semiconductor device on the substrate. However, in the deposition process for forming the thin film, byproducts including the deposits are not only deposited on the desired deposition area on the substrate, but also deposited in the chamber where the deposition process is performed.

[0003] In addition, the byproducts deposited in the cavity will peel off when the thickness of the byproducts increases, thereby causing the generation of particles. In addition, the particles will enter the thin film formed on the substrate or cause defects, thereby increasing the defect rate of the product. Therefore, it is necessary to remove these byproducts deposited inside the cavity before the byproducts peel off.

[0004] In the cleaning process for removing the byproducts deposited inside the chamber, chlorine (Cl) gas or hydrogen (H) gas is used. That is, hydrogen chloride (HCl) gas generated by the reaction between chlorine (Cl) gas and hydrogen (H) gas will corrode the byproducts deposited inside the chamber and remove the byproducts.

[0005] However, the inside of the chamber may have partially different temperatures, and in a portion having a low temperature of, for example, not higher than about 150° C., products including chlorine (Cl) generated by the corrosion reaction between hydrogen chloride (HCl) and byproducts may be deposited and remain.

[0006] In addition, an incident may occur when the chamber needs to be opened according to the state of the deposition apparatus, process conditions, and external environment. When the chamber is opened, the interior of the chamber is exposed to the air, and at this time, the deposits containing chlorine (Cl) deposited inside the chamber during or after cleaning react with moisture in the air to produce hydrogen chloride (HCl). This hydrogen chloride (HCl) may corrode the interior of the chamber, such as the inner wall of the chamber, the susceptor, and the gas injection part, thereby damaging the chamber.

[0007] [Prior Art Documents]

[0008] [Patent document]

[0009] (Patent Document 1) Korean Patent Publication No. 10-1232904 Summary of the invention

[0010] Technical issues

[0011] The invention provides a cavity cleaning method capable of preventing the interior of the cavity from being damaged.

[0012] The invention also provides a cavity cleaning method capable of improving the properties of the film.

[0013] Technical means

[0014] According to an exemplary embodiment, a chamber cleaning method includes a chamber stabilization process for transferring a substrate outside a chamber and processing the interior of the chamber. A thin film deposition process has been completed on the substrate. The chamber stabilization process includes a cleaning process and a coating process. The cleaning process is used to inject a cleaning gas into the chamber and erode and clean multiple byproducts generated by the thin film deposition process. The coating process is used to inject a gas containing at least one of aluminum (Al), zirconium (Zr) and hafnium (Hf) into the chamber as a coating gas, and generate a protective film on at least one surface of multiple components installed in the chamber and an inner wall of the chamber.

[0015] The cleaning gas may include at least one of chlorine (Cl) and hydrogen (H).

[0016] The cleaning process may include a process for generating a plasma inside the chamber.

[0017] The protective film formed by the coating process may include a metal oxide film.

[0018] The protective film may include at least one of aluminum oxide, zirconium oxide, and hafnium oxide.

[0019] The protective film may preferably be formed with a thickness of not less than about 100 angstroms.

[0020] The chamber stabilization process may include a conditioning process. The conditioning process is performed after the coating process. The conditioning process may include a process for injecting a deposition gas used in the deposition process.

[0021] The thickness of an adjustment film deposited inside the cavity through the adjustment process may be not less than about 100 angstroms.

[0022] A thin film deposited on the substrate through the thin film deposition process may be a metal oxide thin film.

[0023] The metal oxide thin film deposited on the substrate by a thin film deposition process may be an active layer of a thin film transistor.

[0024] When the active layer is formed in a thin film deposition process, the active layer may be formed by doping at least one of indium (In) and gallium (Ga) into zinc oxide (ZnO).

[0025] Beneficial effects

[0026] In the chamber stabilization process according to an exemplary embodiment, the protective film coating process is performed in situ after completing the cleaning process inside the chamber.

[0027] In the protective film coating process, the inner portion of the chamber and the inner wall of the chamber may be damaged during or after the chamber cleaning process using a corrosive gas.

[0028] Therefore, the reaction between the components exposed to the corrosive substances and moisture after the cleaning process can be suppressed by performing the protective film coating process. Therefore, the generation of corrosive substances (such as hydrogen chloride (HCl)) can be prevented or suppressed, thereby preventing the interior of the chamber from being corroded, that is, damaged.

[0029] In addition, a conditioning process may be further performed in situ inside the chamber after the protective film coating process. When performing the conditioning process, an atmosphere similar to that of the next deposition process is constructed inside the chamber 100, thereby reducing factors acting as impurities in the deposition process and producing an effect of improving the properties of the thin film produced after the protective film coating process and the conditioning process are completed.

[0030] In addition, there is an effect of improving device performance, such as improving thin film transistors, and reducing performance variations. In addition, in an exemplary embodiment, the deposition process and the cavity stabilization process are performed in situ, thereby effectively preventing impurities from penetrating into the cavity, thereby more effectively preventing or inhibiting the interior of the cavity from being corroded. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Exemplary embodiments may be understood in more detail through the following detailed description and accompanying drawings, in which:

[0032] Figure 1 FIG. 1 is a schematic diagram of a substrate processing apparatus for performing a chamber cleaning method according to an exemplary embodiment.

[0033] Figure 2 is a flow chart of a cavity cleaning method according to a first exemplary embodiment.

[0034] Figure 3 is a flow chart of a cavity cleaning method according to a second exemplary embodiment.

[0035] Figure 4 is a schematic diagram showing a thin film transistor. DETAILED DESCRIPTION

[0036] Below, exemplary embodiments will be described in detail with reference to the accompanying drawings. However, the present invention will be implemented in various forms and should not be limited to the embodiments described herein. More specifically, these embodiments are provided to make the present invention more thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. In order to describe the exemplary embodiments, the drawings may be exaggerated and similar reference numerals represent similar elements in the drawings.

[0037] Figure 1 FIG. 1 is a schematic diagram of a substrate processing apparatus for performing a chamber cleaning method according to an exemplary embodiment. Figure 2 is a flow chart of a cavity cleaning method according to a first exemplary embodiment. Figure 3 is a flow chart of a cavity cleaning method according to a second exemplary embodiment. Figure 4 A schematic diagram showing a thin film transistor is used to describe a chamber cleaning method according to an exemplary embodiment.

[0038] First, see Figure 2 and Figure 3 , a cavity cleaning method according to an exemplary embodiment will be simply described.

[0039] The chamber cleaning method according to an exemplary embodiment includes: a process for depositing a thin film on a substrate (hereinafter referred to as a thin film deposition process S100), and a process for removing internal byproducts after the deposition is completed and performing cleaning and coating inside the chamber to prevent damage (hereinafter referred to as a chamber stabilization process S200). At this time, in the chamber stabilization process method according to an exemplary embodiment, the thin film deposition process S100 and the chamber stabilization process S200 are performed in situ.

[0040] Here, as shown in the first embodiment, the chamber stabilization process S200 includes: a chamber cleaning process S210 for removing byproducts inside the chamber after completing the thin film deposition process S100, and a protective film coating process S220 for coating a protective film inside the chamber after cleaning.

[0041] In addition, if Figure 3 As shown in the second exemplary embodiment, the chamber stabilization process S200 may further include a seasoning process S230, and in the seasoning process S230, the inside of the chamber is adjusted to an atmosphere similar to the deposition process performed after the protective film coating process S220 is completed.

[0042] Here, thin film deposition may be referred to as thin film deposition process S100 , chamber cleaning may be referred to as chamber cleaning process S210 , protective film coating may be referred to as protective film coating process S220 , and adjustment may be referred to as adjustment process S230 .

[0043] See below Figure 1 , a substrate processing apparatus for performing a cleaning method according to an exemplary embodiment will be described.

[0044] As described above, in the substrate processing apparatus, the thin film deposition process S100 and the chamber stabilization process S200 for depositing a thin film on the substrate 10 are performed in situ, and the thin film deposition process S100 may be a process for depositing a metal oxide thin film.

[0045] In a more specific example, the thin film deposition process S100 using the substrate processing equipment may be a process for forming a metal oxide thin film in order to form an active layer of a thin film transistor. In addition, the metal oxide thin film formed in the thin film deposition process S100, i.e., the active layer, may be a thin film in which at least one of indium (In) and gallium (Ga) is doped (doped) to zinc oxide (ZnO), for example. That is, the active layer may be any one of an indium zinc oxide (IZO) thin film in which indium (In) is doped in zinc oxide (ZnO), a gallium zinc oxide (GZO) thin film in which gallium (Ga) is doped in zinc oxide (ZnO), and an indium gallium zinc oxide (IGZO) thin film in which indium (In) and gallium (Ga) are doped in zinc oxide (ZnO).

[0046] See also Figure 1 , a substrate processing apparatus according to an exemplary embodiment includes a chamber 100, a first gas supply part 200, a second gas supply part 300, a third gas supply part 400, an injection part 500, and a susceptor 600. The first gas supply part 200, the second gas supply part 300, and the third gas supply part 400 provide gases different from each other. The injection part 500 is provided with a first channel 541 for movement of the gas provided from the first gas supply part 200 and the third gas supply part 400, and a second channel 542 for movement of the gas provided from the second gas supply part 300, and the injection part 500 is installed inside the chamber 100 and injects gas. The susceptor 600 is installed inside the chamber 100 and faces the injection part 500, and has a surface facing the injection part 500 and on which the substrate 10 is installed.

[0047] In addition, the substrate processing apparatus may include a radio frequency power supply part 700 , and the radio frequency power supply part 700 applies power in order to generate plasma inside the chamber 100 .

[0048] The chamber 100 may include a processing space in which a thin film may be formed on a substrate newly transferred into the chamber. For example, the cross-sectional shape of the interior of the chamber may be a rectangle, a pentagon, a hexagon, or a similar shape. Of course, the shape of the interior of the chamber 100 may be changed in various ways and preferably corresponds to the shape of the substrate 10.

[0049] The injection part 500 faces the base 600 inside the cavity 100 and includes a first plate 510 and a plurality of nozzles 520, wherein the first plate 510 is aligned in the extension direction of the base 600 and provided with holes (hereinafter referred to as injection holes 511) spaced apart from each other, and the nozzles 520 are provided to be inserted into these injection holes 511.

[0050] In addition, the injection part 500 includes: a second plate 530 installed between the top wall of the cavity 100 and the first plate 510 in the cavity 100 , and an insulating part 560 between the first plate 510 and the second plate 530 .

[0051] Here, the first board 510 may be connected to the RF power supply unit 700 and the second board may be grounded. In addition, the insulating unit 560 has a function of preventing electrical connection between the first board 510 and the second board 530 .

[0052] The first plate body 510 may have a flat plate shape extending and formed in the extension direction of the base 600. In addition, the first plate body 510 is provided with injection holes 511, and each injection hole 511 may pass through the first plate body 510 in a vertical direction. In addition, these injection holes 511 are arranged and aligned in the extension direction of the first plate body 510 or the base 600.

[0053] Each nozzle 520 may have a shape extending in the vertical direction, and a passage for gas to pass through is provided inside the nozzle, and the top and bottom ends of the nozzle are open. In addition, these nozzles 520 are installed so that at least the bottom thereof is inserted into the injection hole 511 provided in the first plate body 510, and the top thereof is installed so as to be connected to the second plate body 530. Therefore, the nozzle 520 can be described as having a shape protruding downward from the second plate body 530.

[0054] The outer diameter of the nozzle 520 is smaller than the inner diameter of the injection hole 511, and when the nozzle 520 is inserted and installed in the injection hole 511, the nozzle is installed so that the outer peripheral surface of the nozzle 520 is spaced apart from the peripheral wall of the injection hole 511 (i.e., the inner wall of the first plate body 510). Therefore, the inside of the injection hole 511 is divided into the outer space of the nozzle 520 and the inner space of the nozzle 520.

[0055] The passage inside the nozzle 520 in the injection hole 511 is a passage for the gas from the first gas supply part 200 and the third gas supply part 400 to pass through and be injected. In addition, the outer space of the nozzle 520 inside the injection hole 511 is a passage for the gas from the second gas supply part 300 to pass through and be injected.

[0056] Therefore, hereinafter, the nozzle internal channel is named as the first channel 541 , and the internal space of the nozzle 520 inside the injection hole 511 is called the first channel 541 , and the external space of the nozzle 520 is called the second channel 542 .

[0057] The top surface of the second plate 530 is spaced apart from the top wall of the cavity 100, and the bottom surface of the second plate 530 is spaced apart from the first plate 510. Therefore, vacant space is provided between the second plate 530 and the first plate 510 and between the second plate 530 and the top wall of the cavity 100.

[0058] Here, the top space of the second plate 530 is a space (hereinafter referred to as a gas distribution space 550) through which the gas from the first gas supply part 200 and the third gas supply part 400 described below passes, and is connected to the top openings of the nozzles 520. In other words, the gas distribution space 550 is a space connected to the first channels 541. Therefore, the gas provided from the first gas supply part 200 and the third gas supply part 400 and supplied to the gas distribution space 550 is supplied and injected into the first channels 541.

[0059] In addition, a gun drill (not shown) as a passage through which gas passes is provided inside the second plate body 530, and the gun drill is connected to the second feeding pipe 320 of the second gas supply part 300 and communicates with the second passage 542. Therefore, the gas supplied from the second gas supply part 300 can be injected into the substrate 10 through the gun drill of the second plate body 530 and the second passage 542.

[0060] In the first gas supply part 200, the second gas supply part 300 and the third gas supply part 400, different types of gases may be supplied to the processing space of the chamber. Hereinafter, for convenience of description, the gas supplied from the first gas supply part 200 is referred to as the first gas, the gas supplied from the second gas supply part 300 is referred to as the second gas, and the gas supplied from the third gas supply part 400 is referred to as the third gas.

[0061] In addition, a chamber cleaning method using a substrate processing apparatus according to an exemplary embodiment may be performed, a deposition process and a chamber stabilization process may be performed, and the deposition process and the chamber stabilization process may be performed respectively through a reaction product between a first gas and a second gas.

[0062] Therefore, the first gas supply part 200 and the second gas supply part 300 supply gases for the deposition process and the stabilization process in the processing chamber, respectively. At this time, the second gas supplied from the second gas supply part 300 is a gas that reacts with the first gas supplied from the first gas supply part 200. In addition, the third gas supply part 400 provides a gas for purging in the chamber treatment process.

[0063] In other words, the first gas supplied from the first gas supply unit 200 and the second gas supplied from the second gas supply unit 300 include a gas for deposition and a cleaning gas for processing the chamber, respectively. That is, the first and second gases may include gases for deposition and cleaning and coating of a protective film, respectively. In addition, the third gas supplied from the third gas supply unit 400 includes a cleaning gas for cleaning when coating a protective film in a chamber processing process.

[0064] Hereinafter, the first gas supply part 200 , the second gas supply part 300 , and the third gas supply part 400 will be described.

[0065] The first gas supply part 200 includes a first storage part 210 and a first feeding pipe 220. The first storage part 210 stores the first gas. One end of the first feeding pipe 220 is connected to the first storage part 210, and the other end of the first feeding pipe 220 is connected to the gas distribution space 550 and the first feeding pipe 220 has a passage for the first gas to move. Therefore, the first gas supplied from the first storage part 210 can be moved and injected through the gas distribution space 550 and the nozzles 520, that is, the first passages 541.

[0066] The first storage unit 210 may include a first deposition gas storage unit 211, a first cleaning gas storage unit 212, and a first coating gas storage unit 213. The first deposition gas storage unit 211 stores a gas for deposition (first deposition gas). The first cleaning gas storage unit 212 stores a gas for cleaning (first cleaning gas). The first coating gas storage unit 213 stores a gas for coating a protective film (first coating gas).

[0067] The first deposition gas stored in the first deposition gas storage part 211 is a source material gas for depositing a thin film, and the first deposition gas storage part 211 may store a raw material gas including zinc (Zn), a raw material gas including indium (In), and a raw material gas including gallium (Ga) in respective canisters (not shown) of the source gas, and the source material gas may be supplied to the chamber 100. That is, the first deposition gas supplied to the chamber through the first feeding pipe 220 may include: a raw material gas including zinc (Zn), a raw material gas including indium (In), and a raw material gas including gallium (Ga).

[0068] At this time, the raw material gas containing zinc (Zn), the raw material gas containing indium (In), and the raw material gas containing gallium (Ga) can be stored in a single first deposition gas storage section 211, or the first deposition gas storage section 211 can be divided into three storage sections, wherein the three storage sections respectively store the raw material gas containing zinc (Zn), the raw material gas containing indium (In), and the raw material gas containing gallium (Ga).

[0069] Here, diethyl zinc (Zn(C 2 H 5 ) 2 , DEZ) and dimethylzinc (Zn(CH 3 ) 2 , DMZ) as a raw material gas containing zinc (Zn), trimethyl indium (In(CH 3 ) 3 At least one of diethylaminopropyldimethyl indium (DADI) and trimethyl gallium (Ga(CH 3 ) 3 , TMGa) or a similar compound is used as a raw material gas containing gallium (Ga).

[0070] The first cleaning gas stored in the first cleaning gas storage part 212 is a source material gas used to remove byproducts inside the chamber 100, and the first cleaning gas storage part 212 may store, for example, a raw material gas containing chlorine (Cl) gas. That is, the first cleaning gas may include: a raw material gas containing chlorine (Cl). Here, Cl may be used. 2 , BCl3 and ClF 3 as a raw material gas containing chlorine.

[0071] The first coating gas stored in the first coating gas storage part 213 is a source material gas used to coat a protective film inside the chamber 100 , wherein a cleaning process has been completed in the chamber 100 .

[0072] In an exemplary embodiment, the protective film is coated inside the chamber 100, and the protective film may be formed in a metal oxide film, wherein the cleaning process has been completed in the chamber 100. Specifically, the protective film may be made of, for example, Al 2 O 3 Alumina, such as ZrO 2 Zirconia and HfO 2 is formed by any one of hafnium oxide.

[0073] Therefore, the first coating gas storage unit 213 may store source material gas, such as at least one of a raw material gas containing aluminum (Al), a raw material gas containing zirconium (Zr), and a raw material gas containing hafnium (Hf), in order to form any one of aluminum oxide, zirconium oxide, and hafnium oxide. In other words, the first coating gas may contain at least one of a raw material gas containing aluminum (Al), a raw material gas containing zirconium (Zr), and a raw material gas containing hafnium (Hf).

[0074] Here, trimethylaluminum (Al(CH 3 ) 3 , TMA) as a raw material gas containing aluminum (Al), tetrakis(ethylmethylamino) zirconium (tetrakis(ethylmethylamino)Zr, TEMAZr) as a raw material gas containing zirconium (Zr), and tetrakis-ethyl methylamino hafnium (Hf[NC 2 H 5 CH 3 ] 4 , TEMAH), tetrakis-diethylaminohafnium (Hf[N(C 2 H 5 ) 2 ] 4 , TDEAH), tetrakis-dimethylaminohafnium (Hf[N(CH 3 ) 2 ]4 ), TDMAH), Hf[N(C 3 H 7 ) 2 ] 4 Or Hf[N(C4H9)2]4 as the raw material gas containing hafnium (Hf).

[0075] The first feeding pipe 220 is a means for moving the first gas from the first storage portion 210 to the first channel 541. That is, in the deposition process, the first deposition gas supplied from the first deposition gas storage portion 211 is moved to the nozzles 520 through the first feeding pipe 220 and the gas distribution space 550. In addition, in the cleaning process, the first cleaning gas supplied from the first cleaning gas storage portion 212 is moved to the nozzles 520 through the first feeding pipe 220 and the gas distribution space 550. In addition, in the coating process, the first coating gas supplied from the first coating gas storage portion 213 is moved to the nozzles 520 through the first feeding pipe 220 and the gas distribution space 550.

[0076] The first feeding pipe 220 may have a tubular shape and a passage for gas to pass therethrough may be provided therein. In addition, valve bodies 230a, 230b, 230c may be installed. The valve bodies 230a, 230b, 230c control the communication relationship between each of the first deposition gas storage part 211, the first cleaning gas storage part 212, and the first coating gas storage part 213, and adjust the first feeding pipe and the gas feeding amount.

[0077] The second gas supply part 300 includes a second storage part 310 and a second feeding pipe 320. The second storage part 310 stores the second gas. One end of the second feeding pipe 320 is connected to the second storage part 310, and the other end of the second feeding pipe 320 is connected to the deep hole provided inside the second plate body 530, and the second feeding pipe 320 includes a channel for the second gas to move. Therefore, the second gas supplied from the second storage part 310 can be injected through the deep hole of the second plate body 530 and through the second channel 542 provided inside the first plate body 510.

[0078] The second storage part 310 includes a second deposition gas storage part 311, a second cleaning gas storage part 312, and a second coating gas storage part 313. The second deposition gas storage part 311 stores a gas for deposition (second deposition gas). The second cleaning gas storage part 312 stores a gas for cleaning (second cleaning gas). The second coating gas storage part 313 stores a gas for coating a protective film (second coating gas).

[0079] The second deposition gas stored in the second deposition gas storage unit 311 may be a reaction raw material gas that reacts with the first deposition gas and produces a reaction product for depositing a thin film. That is, the second deposition gas may be different from the first deposition gas and may be a reaction raw material gas that can react with the first deposition gas, such as a raw material gas containing oxygen (O). Here, pure oxygen (O 2 ), nitrous oxide (N 2 O) and ozone (O 3 ) as a raw material containing oxygen (O), that is, as a second deposition gas.

[0080] The second cleaning gas stored in the second cleaning gas storage portion 312 may be a reaction raw material gas that reacts with the first cleaning gas and produces a reaction product for removing byproducts. That is, the second cleaning gas may be different from the first cleaning gas and may be a reaction raw material gas that can react with the first cleaning gas, for example, a raw material gas containing hydrogen (H). Here, H 2 , CH 4 and H 2 O as a raw material gas containing hydrogen (H).

[0081] The second coating gas stored in the second coating gas storage unit 313 may be a reaction raw material gas that reacts with the first coating gas and produces a reaction product for coating the protective film. That is, the second coating gas may be different from the first coating gas and may be a raw material gas that can react with the first coating gas. As described above, the protective film is formed by using any one of aluminum oxide, zirconium oxide, and hafnium oxide, and when the first coating gas is a raw material gas containing any one of aluminum (Al), zirconium (Zr), and hafnium (Hf), the second coating gas may be a gas containing oxygen (O). Here, pure oxygen (O) may be used. 2 ), nitrous oxide (N 2 O) and ozone (O 3 ) as a raw material gas containing oxygen, that is, as a second coating gas.

[0082] The second feed pipe 320 may be a device for moving the second gas supplied from the second storage part 310 to the second channel 542. That is, the second deposition gas supplied from the second deposition gas storage part 311 in the deposition process passes through the second feed pipe 320 and the deep hole provided to the second plate body 530 and moves to the second channel 542, the second cleaning gas supplied from the second cleaning gas storage part 312 in the cleaning process passes through the second feed pipe 320 and the deep hole provided to the second plate body 530 and moves to the second channel 542, and the second coating gas supplied from the second coating gas storage part 313 in the coating process passes through the second feed pipe 320 and the deep hole provided to the second plate body 530 and moves to the second channel 542. In addition, the second deposition gas, the second cleaning gas, and the second coating gas may be injected through the second channel 542, respectively.

[0083] The second feeding tube 320 may have a tubular shape to have a passage for gas movement, and may have a deep hole (not shown) shape so that a linear long hole is formed in the second plate 530 of the chamber 100 to allow gas to flow.

[0084] In addition, valve bodies 330a, 330b, 330c may be installed to control the communication relationship between the second deposition gas storage part 311, the second cleaning gas storage part 312 and the second coating gas storage part 313, and adjust the second feeding pipe and the gas feeding amount.

[0085] As described above, the second deposition gas and the second coating gas may both be gases containing oxygen (O), and the same gas may be used. Therefore, when the same gas is used as the second deposition gas for depositing a thin film and the second coating gas for coating a protective film, the second storage unit 310 may have either the second deposition gas storage unit 311 or the second coating gas storage unit 313.

[0086] Of course, different gases may be used as the second deposition gas and the second coating gas. In this case, in the second storage part 310, a second deposition gas storage part 311 and a second coating gas storage part 313 storing different gases may be separately provided.

[0087] The third gas supply part 400 includes a third storage part 410 and a third feeding pipe 420. The third storage part 410 stores the third gas. One end of the third feeding pipe 420 is connected to the third storage part 410, and the other end of the third feeding pipe 420 is connected to the gas distribution space 550, and the third feeding pipe 420 includes a passage for the movement of the third gas. Therefore, the third gas supplied from the third storage part 410 can be moved and injected through the gas distribution space 550 and the nozzles 520, that is, the first passages 541.

[0088] The third storage part 410 stores a gas used for purging when forming the protective film (hereinafter referred to as a purging gas). The purging gas stored in the third storage part 410 may be an inert gas, such as nitrogen gas.

[0089] The third feeding pipe 420 is a device for moving the third gas, i.e., the purge gas, supplied from the third storage part 410 to the injection part 500. That is, in the protective film coating process, the third deposition gas supplied from the third storage part 410 passes through the third feeding pipe 420 and the gas distribution space 550 and then moves to the nozzles 520.

[0090] The third feeding pipe 420 may have a tubular shape and have a passage through which gas may pass. In addition, a valve body 430 may be installed. The valve body 430 controls the communication relationship between the third storage part 410 and the third feeding pipe 420 and adjusts the gas feeding amount.

[0091] The base 600 is disposed inside the cavity 100 and faces the injection part 500, or the base and the injection part face each other. At this time, the base 600 can be located inside the cavity, for example, under the injection part 500. The shape of the base 600 can correspond to the shape of the substrate 10, and can be, for example, rectangular or circular. In addition, the area of ​​the base 600 can be preferably larger than the area of ​​the substrate 10. In addition, the base 600 can be used to be embedded with a heater (not shown) and a cooling device (not shown), and the base 600 and the substrate 10 can be adjusted to a target temperature by operating at least one of the heater or the cooling device.

[0092] The cavity 100 , the injection part 500 , and the base 600 may be provided by using a material including metal, and the metal is, for example, aluminum (Al).

[0093] The RF power supply unit 700 is a device for applying power to generate plasma inside the chamber 100. Specifically, the RF power supply unit 700 is a device for applying RF power to generate plasma, and can be connected to the first plate of the injection unit 500. In addition, the RF power supply unit 700 can also include an impedance matching circuit, which is used to match the load impedance and source impedance of the power source used to generate plasma. The impedance matching circuit can be used to include two impedance elements, which include at least one of a variable capacitor and a variable inductor.

[0094] In addition, the injection part 500 , the base 600 facing the injection part 500 , and the second plate 530 may be grounded.

[0095] Therefore, in the RF power supply unit 700 , when the RF power source is applied to the first plate 510 and the base 600 and the second plate 530 are both grounded, plasma may be generated inside the second channel 542 of the injection unit 500 and in the space between the first plate 510 and the base 600 .

[0096] Here, when plasma is generated in the space between the first plate 510 and the susceptor 600, the injection portion is closer to the position where the plasma is generated than the susceptor 600. Specifically, the plasma may be generated right below the injection portion 500.

[0097] See below Figure 1 , Figure 2 and Figure 4 , a cavity cleaning method according to a first exemplary embodiment will be described.

[0098] See also Figure 2 The chamber cleaning method includes a thin film deposition process S100 for depositing a thin film on a substrate 10 and a chamber stabilization process S200 for removing particles and treating the inside of the chamber to prevent damage to the inside of the chamber, wherein the particles are caused by byproducts generated during the deposition process after the thin film deposition is completed. Here, the thin film deposition process S100 and the chamber stabilization process S200 are performed in situ.

[0099] First, for thin film deposition, the substrate 10 is transferred into the chamber 100 and mounted on the susceptor 600 .

[0100] Here, the thin film to be deposited in the thin film deposition process S100 is an active layer 40 of a thin film transistor, and an example in which the active layer 40 is an indium gallium zinc oxide (IGZO) thin film in which indium (In) and gallium (Ga) are doped into zinc oxide (ZnO) will be described. Figure 4 As shown in FIG. 6 , the substrate 10 mounted on the base 600 may be a substrate on which a gate electrode 20 and a gate insulating film 30 are stacked.

[0101] For thin film deposition on the active layer 40 , a first deposition gas as a source raw material gas for depositing the active layer is injected into the first channel 541 , and a second deposition gas as a reaction raw material gas for depositing the active layer is injected into the second channel 542 .

[0102] To this end, in order to deposit the active layer, the first gas supply part 200 and the second gas supply part 300 supply the first and second gases to the first channel 541 and the second channel 542, respectively. That is, the first deposition gas is supplied from the first deposition gas storage part 211 to the first feeding pipe 220, wherein the first deposition gas includes: a raw material gas including zinc (Zn), a raw material gas including indium (In), and a raw material gas including gallium (Ga). Therefore, the first deposition gas moves to the gas distribution space 550 through the first feeding pipe and then is supplied and injected through a plurality of nozzles, i.e., a plurality of first channels 541. In addition, the second deposition gas including oxygen is supplied from the second deposition gas storage part 311 to the second feeding pipe. Therefore, the second deposition gas can be supplied to the second channel 542 inside the first plate body 510 through the second feeding pipe 320 and through the flow channel (not shown) inside the second plate body 530, and then injected into the processing space from the second channel 542.

[0103] When the first and second deposition gases are injected, the RF power supply part 700 may apply RF power to the first plate 510. When RF power is applied to the first plate 510, plasma may be generated in the second channel 542 inside the injection part 500 and in the space between the first plate 510 and the susceptor 600. At this time, the first deposition gases injected through the first channel 541 and the second channel 542 or passing through the first channel 541 and the second channel 542 may react with each other, and an indium gallium zinc oxide (IGZO) film, that is, an active layer 40, may be formed on the gate insulating film 30.

[0104] In the above-mentioned embodiment, it has been described that plasma is formed by operating the RF power supply unit 700 in the deposition process for forming the active layer 40. However, the exemplary embodiment is not limited thereto, and the thin film (i.e., the active layer 40), the gate insulating film 30, etc. may not be formed by forming plasma, but may be formed by injecting the first deposition gas and the second deposition gas and raising the temperature of the chamber 100 to a high temperature to react the gases. When the deposition process of the active layer 40 is completed, the substrate 10 may be transferred out of the chamber 100.

[0105] Next, a chamber stabilization process S200 for processing the chamber 100 may be performed.

[0106] Meanwhile, byproducts may be deposited inside the chamber 100 during the deposition process. Specifically, the byproducts may be deposited on the inner wall of the chamber 100, the surface of the first plate 510, and the bottom surface of the second plate 530. In addition, because the space between the first plate 510 and the second plate 530 is narrow and plasma is generated in this space, more byproducts may be deposited on the surface of the first plate 510, the surface of the nozzle 520, and the bottom surface of the second plate 530 than on the inner wall of the chamber 100.

[0107] When the chamber stabilization process S200 is performed, firstly, chamber cleaning (chamber cleaning process S210 ) is performed to remove byproducts deposited inside the chamber 100 during the deposition process of the active layer 40 .

[0108] To this end, the gas for chamber cleaning is supplied to the injection part from each of the first gas supply part 200 and the second gas supply part 300. That is, the first cleaning gas containing chlorine (Cl) is supplied to the first feeding pipe 220 from the first cleaning gas storage part 212. Therefore, the first cleaning gas is supplied to the first channel 541 of the injection part 500 through the first feeding pipe 220, and then injected from the first channel 541. In addition, when the second cleaning gas containing hydrogen (H) is supplied from the second cleaning gas storage part 312 to the second feeding pipe 320, the second cleaning gas passes through the second feeding pipe 320 and is supplied to the second channel 542 of the injection part 500 and then injected from the second channel 542.

[0109] When the first and second cleaning gases are injected through the injection part 500, the RF power supply part 700 may apply RF power to the first plate 510. At this time, plasma may be generated in the second channel 542 inside the injection part 500 and in the space between the first plate 510 and the susceptor 600.

[0110] Therefore, the first cleaning gas and the second cleaning gas react with each other and generate hydrogen chloride (HCl) gas. The generated hydrogen chloride (HCl) gas is deposited inside the chamber during the thin film deposition process and generates a corrosion reaction with the byproducts including metal oxides, such as zinc oxide (see Reaction Formula 1). At the same time, the byproducts are not only deposited on the inner wall of the chamber 100, but also on various components exposed to the internal space of the chamber 100, such as the base 600, the nozzle 520, and the injection part 500.

[0111] Therefore, the generated HCl gas reacts with byproducts deposited inside the chamber 100 (i.e., byproducts deposited on the inner wall of the chamber 100, the base 600, the nozzle 520, the surface of the injection part 500, etc.), and corrodes and removes the byproducts.

[0112] Reaction 1

[0113] In 2 Ga 2 Zn 1 O 7 +7H 2 +4Cl 2 →2InCl 3 +ZnCl 2 +7H 2 O

[0114] Meanwhile, in the lower temperature portion of the chamber 100, specifically, at about 150° C. or lower, products such as 2InCl generated by the corrosion reaction between the HCl gas and the byproducts are 3 or ZnCl 2 , may be deposited or remain.

[0115] In addition, after the chamber 100 is cleaned, the chamber 100 may need to be opened according to the state of the deposition device, process conditions, external environment and other factors. When the chamber 100 is opened, the interior of the chamber 100 is exposed to the air, and at this time, the residue containing chlorine (Cl) (i.e., 2InCl 3 、ZnCl 2 The products (such as the above) will react with the water vapor in the air to generate hydrogen chloride (HCl) gas (please refer to reaction formula 2 to reaction formula 4). The hydrogen chloride (HCl) gas may corrode and damage the interior of the chamber 100, such as the inner wall of the chamber 100, the injection part 500 and the base 600.

[0116] Reaction 2

[0117] InCl 3 +H 2 O→InOCl+HCl+H 2 O

[0118] Reaction 3

[0119] ZnCl 2 +2H 2 O→ZnCl(OH)+HCl+H 2 O

[0120] Reaction 4

[0121] Al(H 2 O) 6 Cl 3 →Al(OH) 3 +3HCl+3H 2 O

[0122] Therefore, in an exemplary embodiment, in order to prevent or suppress the interior of the chamber 100 from being corroded by the residues of the chamber cleaning process, a protective film is coated on the interior of the chamber 100 after the chamber is cleaned (protective film coating process S220). At this time, the chamber cleaning process and the protective film coating process are performed in situ.

[0123] When the protective film is applied to the interior of the chamber 100, such coating may be formed by an atomic layer deposition (ALD) method, wherein the atomic layer deposition method is performed by injecting "source gas, purge gas, reaction gas, and purge gas" in the following order. In other words, "first gas, purge gas, second gas, and purge gas" are injected in the following order, and this injection cycle is repeated to apply the protective film. In addition, the order may be described as "first coating gas, purge gas, second coating gas, and purge gas".

[0124] Specifically, first, the first coating gas from the first coating gas storage part 213 is provided to the first feeding pipe 220, wherein the first coating gas contains a raw material gas of at least one of aluminum (Al), zirconium (Zr) and hafnium (Hf). Therefore, the first coating gas is supplied to the first channel 541 of the injection part 500 through the first feeding pipe 220, and then injected into the processing space inside the chamber 100.

[0125] That is, when the third gas as a purging raw material such as nitrogen is supplied from the third storage part 410 to the first feeding pipe 220, the purging gas is supplied to the first channel 541 through the first feeding pipe 220 and then injected and purged.

[0126] Next, the second coating gas that reacts with the first coating gas is supplied to the injection portion 500. That is, when the second coating gas containing oxygen (O) is supplied from the second coating gas storage portion 313 to the second feeding pipe 320, the second coating gas enters the deep hole channel (not shown) of the second plate 530 through the second feeding pipe 320, and is then supplied to the second channel 542, and then injected into the processing space inside the chamber 100.

[0127] When the second coating gas containing oxygen (O) is injected, the second coating gas reacts with the first coating gas, thereby generating a reaction product of at least one of aluminum oxide, zirconium oxide, and hafnium oxide. In addition, a film of the reaction product, i.e., at least one of aluminum oxide, zirconium oxide, and hafnium oxide, is deposited or coated on the interior of the cavity 100, such as the inner wall of the cavity 100 and the surfaces of the injection part 500 and the base 600. In addition, in the injection part 500, the film may be deposited on the outer peripheral surface of the nozzle 520, the inner surface defined by the second channel 542 in the first plate 510, the outer surface of the first plate 510, and the bottom surface of the second plate 530. Therefore, the coating film generated by the reaction of the first coating gas and the second coating gas is a protective film.

[0128] Next, when the cleaning gas is injected through the third gas supply part 400, the reaction byproducts between the first coating gas and the second coating gas may be cleaned.

[0129] In the above, the formation of the protective film by the atomic layer deposition (ALD) method has been described, wherein the atomic layer deposition method is performed in a cycle of “source gas, purge gas, reaction gas, and purge gas”.

[0130] However, the embodiment is not limited thereto, and the protection film may be formed through another method in which plasma is generated by sequentially injecting a source gas, a purge gas, and a reaction gas and then operating the RF power providing part 700 .

[0131] In other words, the protective film may be formed by sequentially injecting the first coating gas, the purge gas as the third gas, and the second coating gas and then operating the RF power supply part 700 .

[0132] The protection film may be formed by another method in which the source gas and the purge gas are sequentially injected, the reaction gas begins to be injected before the injection of the purge gas is completed, and the RF power supply part 700 is operated after the injection of the reaction gas is completed.

[0133] In other words, the protective layer can be formed by the following method, the first gas and the cleaning gas as the third gas are injected in sequence, the second coating gas is then injected before the injection of the cleaning gas is completed, and then the RF power providing part 700 is operated to generate plasma after the injection of the second coating gas is completed.

[0134] After the chamber cleaning process is performed, the residue containing residual chlorine (Cl) is coated with the protective film formed thereafter, wherein the protective film is formed through such a protective film coating process. Therefore, even when the interior of the chamber 100 is opened and exposed to the air due to changes in the state of the chamber 100 according to factors such as the state of the substrate processing equipment, the processing conditions, and the external environment, the residue deposited inside the chamber 100 can be prevented or blocked from being exposed.

[0135] Therefore, the reaction between chlorine (Cl) and water vapor inside the deposit generated during the cleaning process can be prevented. Therefore, the generation of corrosive gas such as hydrogen chloride (HCl) due to the reaction between chlorine (Cl) and water vapor can be prevented, and the interior of the chamber 100 can be prevented from being corroded, that is, damaged.

[0136] As such, since the protective film prevents the deposited film deposited inside the chamber 100 from reacting with moisture during the cleaning process, the protective film may be referred to as a moisture-resistant film.

[0137] Such a protective film may preferably be at least about 100 angstroms thick. This is to avoid exposure of deposits produced during the cleaning process.

[0138] At the same time, when the thickness of the protective film is less than about Or when the protective film has a small thickness, it may not be partially coated. In this case, the deposits generated in the cleaning process and the moisture in the air may react when the chamber is open, thereby generating a corrosive gas such as hydrogen chloride (HCl) and possibly corroding the interior of the chamber 100.

[0139] Therefore, in an exemplary embodiment, the protective film is at least about The thickness is formed.

[0140] In addition, the upper limit of the thickness of the protective film is not particularly limited, but it is preferably set to at least about To improve the operating efficiency and productivity of substrate processing equipment.

[0141] In addition, in the exemplary embodiment, the protective film coating process is performed for no longer than about 10 minutes. However, the embodiment is not limited thereto, and as long as the protective film can be used for no less than about If the target thickness is formed, the above execution time is not limited.

[0142] When the protective film coating is completed, the substrate 10 as the next deposition workpiece will be loaded into the chamber 100, and the above-mentioned deposition process, such as indium gallium zinc oxide (IGZO) active layer deposition, can be performed.

[0143] In the first exemplary embodiment, it has been described that the chamber stabilization process S200 includes the chamber cleaning process S210 and the protection film coating process S220 .

[0144] However, the embodiment is not limited thereto, and Figure 3 As shown in the second embodiment, the chamber stabilization process S200 may further include an adjustment process S230, wherein the adjustment process S230 is performed after the protection film coating process S220.

[0145] The adjustment process S230 is a process for processing the interior of the chamber 100 into an environment similar to that in the next deposition process. That is, the adjustment may be a process in which the gases used in the deposition process, i.e., the first and second deposition gases, are supplied to the injection part 500 from the first gas supply part 200 and the second gas supply part 300 in a state where the substrate 10 is not located inside the chamber 100.

[0146] For example, when the first deposition gas is supplied from the first gas supply part 200 to the injection part, and when the second deposition gas is supplied from the second gas supply part 300 to the injection part, the first and second deposition gases are injected through the injection part 500, wherein the first deposition gas includes: a raw material gas including zinc (Zn), a raw material gas including indium (In), and a raw material gas including gallium (Ga), and the second deposition gas includes oxygen.

[0147] At this time, the first deposition gas and the second deposition gas react with each other, and the adjustment film (ie, indium gallium zinc oxide (IGZO)) can be deposited inside the cavity 100 , that is, deposited on the inner wall of the cavity 100 and the surfaces of the injection part 500 and the base 600 .

[0148] In addition, when the first deposition gas and the second deposition gas are injected, the RF power supply part 700 is operated and RF power is applied to the injection part 500 , so that plasma may be formed inside the chamber 100 .

[0149] Of course, such adjustment may also be performed without forming a plasma when injecting the first deposition gas and the second deposition gas.

[0150] Therefore, when the protective film is applied to the inside of the chamber 100 and then such adjustment is performed before the next deposition process, the metal raw material constituting the protective film can be prevented or suppressed from being an impurity of the deposited thin film to be deposited in the next deposition process, wherein such metal raw material is, for example, at least one of aluminum (Al), zirconium (Zr) and hafnium (Hf). Therefore, the effect of improving the performance of the thin film transistor can be produced and the deviation of the performance can be reduced.

[0151] The thickness of the film may preferably be adjusted to be not less than about And this is because when the thickness is not less than about When the protective film is deposited in the next deposition process, the performance of the film to be deposited is effectively suppressed, such as an indium gallium zinc oxide (IGZO) film used for the active layer.

[0152] In addition, the upper limit of the thickness of the adjustment film is not particularly limited, but it is preferably set to not more than about To improve the operating efficiency and productivity of substrate processing equipment.

[0153] When the conditioning process is completed, the substrate 10 as the next deposition workpiece is loaded into the chamber 100 and the above-mentioned deposition process may be performed.

[0154] When the active layer 40 formation process is completed, the substrate is moved to the next processing device, where a protection film 60, a source electrode 50a and a drain electrode 50b are formed, thereby manufacturing a thin film transistor.

[0155] Therefore, in the chamber cleaning method according to the exemplary embodiment, the protective coating process is performed after the cleaning process inside the chamber 100 is completed. That is, the deposited film deposited inside the chamber 100 and containing chlorine (Cl) is coated with the protective film during or after the cleaning process, thereby preventing the deposited film from reacting with water vapor. Therefore, the generation of hydrogen chloride (HCl) as a corrosive substance can be prevented, thereby preventing the interior of the chamber 100 from being corroded, that is, damaged.

[0156] In addition, a conditioning process may be further performed inside the chamber 100 after the protective film is applied. When the conditioning process is performed, an atmosphere similar to that in the next deposition process is constructed inside the chamber 100, which can reduce factors that serve as impurities in the deposition process and can produce an effect of improving thin film characteristics. In addition, it can produce an effect of improving the performance of the device, such as improving the thin film transistor, and reducing the variation in performance.

[0157] Industrial Applicability

[0158] Therefore, according to the exemplary embodiment, the reaction between the components exposed to the corrosive substance and the moisture after the cleaning process can be suppressed by performing the protective film coating process. Therefore, the generation of hydrogen chloride (HCl) as a corrosive substance can be prevented or suppressed, so that the inside of the chamber can be prevented from being corroded, that is, damaged.

Claims

1. A chamber cleaning method, comprising a chamber stabilization process for transferring a substrate outside a chamber and treating the interior of the chamber, a thin film deposition process having been completed on the substrate, wherein the chamber stabilization process comprises: a cleaning process for injecting a cleaning gas into the chamber to erode and clean a plurality of byproducts generated by the thin film deposition process; and a coating process for injecting a gas containing at least one of aluminum, zirconium and hafnium into the chamber as a first coating gas and generating a protective film on at least one surface of a plurality of components installed in the chamber and an inner wall of the chamber, wherein the cleaning gas comprises chlorine and hydrogen, The cleaning process includes: injecting the cleaning gas into the chamber; reacting chlorine and hydrogen contained in the cleaning gas to produce hydrogen chloride; and The by-products are etched and removed using hydrogen chloride, and a plurality of products are produced by etching the by-products with hydrogen chloride. wherein the products comprise at least one of InCl3 and ZnCl2, in, When the protective film is produced in the coating process, the protective film is produced on the products. The coating process includes: injecting the first coating gas into the cavity; injecting a purge gas into the cavity; injecting a second coating gas comprising oxygen into the chamber; and Plasma is generated inside the chamber after the injection of the second coating gas is completed. 2 . The chamber cleaning method of claim 1 , wherein the cleaning process comprises a process for generating plasma inside the chamber. 3 . The chamber cleaning method as claimed in claim 1 , wherein the protective film formed by the coating process comprises a metal oxide film. 4 . The chamber cleaning method of claim 3 , wherein the protective film comprises at least one of aluminum oxide, zirconium oxide, and hafnium oxide. 5 . The chamber cleaning method of claim 3 , wherein the protective film is formed to have a thickness of at least 100 angstroms.

6. The cavity cleaning method according to claim 1, wherein: The chamber stabilization process includes a conditioning process performed after the coating process; and The conditioning process includes a process for injecting a deposition gas used in the thin film deposition process. 7 . The chamber cleaning method of claim 6 , wherein a thickness of a conditioning film deposited inside the chamber through the conditioning process is not less than 100 angstroms. 8 . The chamber cleaning method as claimed in claim 6 , wherein the thin film deposited on the substrate by the thin film deposition process is a metal oxide thin film. 9 . The chamber cleaning method as claimed in claim 8 , wherein the metal oxide thin film deposited on the substrate by the thin film deposition process is an active layer of a thin film transistor. 10 . The chamber cleaning method as claimed in claim 9 , wherein when the active layer is formed in the thin film deposition process, the active layer is formed by doping zinc oxide with at least one of indium and gallium.

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