Substrate bonding press device, substrate bonding apparatus, and substrate bonding method

Abstract

This invention provides a substrate bonding pressurizing device, a substrate bonding apparatus, and a substrate bonding method. The substrate bonding pressurizing device includes a semiconductor heating and cooling unit and a pressurizing unit. The semiconductor heating and cooling unit includes a first side and a second side arranged along the axial direction of the pressurizing unit. One of the first side and the second side is a heating end, and the other is a cooling end. The heating end and the cooling end flip as the power supply polarity is reversed. The first side is connected to the pressurizing unit, and the second side is used to abut against a substrate. The pressurizing unit is used to pressurize the substrate. This configuration effectively shortens the cooling and heating time, provides precise temperature control and improves heating stability, reduces the cold transfer path, and thus reduces material deformation, thereby improving the equipment's yield and bonding accuracy.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a substrate bonding pressurizing device, a substrate bonding equipment and a substrate bonding method. BACKGROUND

[0002] Wafer bonding technology can combine wafers of different materials together. Wafer bonding is an important process for three-dimensional processing of semiconductor devices. Regardless of the type of wafer bonding, the main process steps of wafer bonding include wafer surface treatment (cleaning, activation), wafer alignment, and final wafer bonding. Through these process steps, independent single wafers are aligned and then bonded together to achieve a three-dimensional structure of the wafer. Bonding is not only a packaging technology in microsystem technology, but also an organic component in three-dimensional device manufacturing, and is applied in both front-end and back-end processes of device manufacturing. The most important existing bonding application is the bonding of silicon wafers and the bonding of silicon wafers and glass substrates.

[0003] The wafer bonding process generally involves heating silicon wafers, glass substrates and other materials to a certain temperature, applying a certain pressure, and bonding for a certain time in a vacuum environment. In the prior art, a separate heating and cooling method is usually used, and the heater and the cooler are arranged along the axial direction of the pressurizing assembly. When heating, the heater is in close contact with the silicon wafer positioning clamp for heating. In high-temperature bonding, the heater is made of built-in heating wires; for low-temperature bonding, a thin-film heater is used, and the heating body is similar to a heating wire. When using these heaters to heat and pressurize the substrate, the time taken to heat the substrate to the specified temperature is very long, accounting for about 20% of the entire process, the yield is low, the temperature oscillation is large, the heating is unstable, the substrate bonding precision is low, and the substrate deformation is large. When cooling, the cooler is separated from the silicon wafer positioning clamp by the heater, so the transmission path is long and the cooling speed is slow.

[0004] Therefore, how to shorten the heating and cooling time, improve the heating stability, reduce the cooling transmission path, and improve the yield is a problem that needs to be solved in the substrate bonding and pressurizing process. SUMMARY

[0005] The present application aims to provide a substrate bonding pressurizing device, a substrate bonding equipment and a substrate bonding method to solve the problem of long heating and cooling time in the wafer bonding process in the prior art.

[0006] To solve the above technical problems, the application provides a substrate bonding and pressing device, which comprises a semiconductor heating and cooling assembly and a pressing assembly; the semiconductor heating and cooling assembly comprises a first side and a second side arranged along an axial direction of the pressing assembly; one of the first side and the second side is a heating end, and the other is a refrigeration end; the heating end and the refrigeration end are reversed with the reversal of positive and negative power supply; the first side is connected with the pressing assembly, and the second side is used for abutting against a substrate; and the pressing assembly is used for pressing the substrate.

[0007] Optionally, the semiconductor heating and cooling assembly comprises at least two semiconductor heating and cooling devices, and the at least two semiconductor heating and cooling devices are arranged in the same layer along a radial direction of the pressing assembly; the heating end and the refrigeration end of the semiconductor heating and cooling devices arranged in the same layer are in the same direction.

[0008] Optionally, the semiconductor heating and cooling assembly comprises at least two semiconductor heating and cooling devices, and the at least two semiconductor heating and cooling devices are arranged in a stack along an axial direction of the pressing assembly; the heating end and the refrigeration end of the semiconductor heating and cooling devices arranged in the stack are in the same direction.

[0009] Optionally, the substrate bonding and pressing device comprises a temperature sensor, which is attached to the second side and used for measuring the temperature of the semiconductor heating and cooling assembly; and the substrate bonding and pressing device is configured to reverse the positive and negative power supply of the semiconductor heating and cooling assembly at least once before the temperature measured by the temperature sensor rises or falls to a final preset temperature.

[0010] Optionally, the substrate bonding and pressing device is configured to set at least one intermediate preset temperature before the temperature measured by the temperature sensor rises or falls to the final preset temperature; and the positive and negative power supply of the semiconductor heating and cooling assembly is reversed after the temperature measured by the temperature sensor rises or falls to the intermediate preset temperature.

[0011] Optionally, the pressing assembly further comprises a cooling unit, which comprises a water-cooled disc, a uniform temperature sheet and a cushion block; one side of the uniform temperature sheet is connected with the semiconductor heating and cooling assembly, the other side of the uniform temperature sheet is connected with the water-cooled disc, and the cushion block is arranged at the outer periphery of the semiconductor heating and cooling assembly.

[0012] Optionally, the substrate bonding and pressing device comprises two semiconductor heating and cooling assemblies, and the pressing assembly comprises an upper pressing assembly and a lower pressing assembly; the upper pressing assembly and the lower pressing assembly are arranged in opposite directions along an axial direction.

[0013] Optionally, the substrate bonding and pressing device comprises an upper pressing plate and a substrate positioning clamp, the upper pressing plate and the substrate positioning clamp are used to clamp the substrate; one semiconductor heating and cooling device is arranged between the upper pressing assembly and the upper pressing plate, and another semiconductor heating and cooling device is arranged between the lower pressing assembly and the substrate positioning clamp.

[0014] Optionally, the substrate bonding and pressing device further comprises a negative pressure cavity assembly, the negative pressure cavity assembly is sealed and wrapped around the upper pressing assembly and the lower pressing assembly, and is used to exhaust gas between the upper pressing assembly and the lower pressing assembly.

[0015] To solve the above technical problems, the present application further provides a substrate bonding device, comprising: the substrate bonding and pressing device as described above.

[0016] To solve the above technical problems, the present application further provides a substrate bonding method, comprising: arranging a substrate in the substrate bonding and pressing device as described above; supplying power to semiconductor heating and cooling devices of the substrate bonding and pressing device in a preset positive and negative sequence, so that the first side is configured as a cooling end and the second side is configured as a heating end; reversing the preset positive and negative sequence of the power supply to the semiconductor heating and cooling devices, so that the heating end and the cooling end are reversed with the reversal of the positive and negative sequence of the power supply; wherein the step of reversing the preset positive and negative sequence is repeated at least once.

[0017] Optionally, when the temperature of the second side of the semiconductor heating and cooling device reaches a preset temperature, the preset positive and negative sequence is reversed; wherein the temperature of the second side is set to at least one preset temperature.

[0018] Optionally, before the step of supplying power to the semiconductor heating and cooling devices of the substrate bonding and pressing device in a preset positive and negative sequence, so that the first side is configured as a cooling end and the second side is configured as a heating end, the negative pressure cavity assembly of the substrate bonding and pressing device is sealed, and negative pressure is provided to the negative pressure cavity assembly.

[0019] In a substrate bonding pressurizing device, a substrate bonding apparatus and a substrate bonding method provided by the present application, the substrate bonding pressurizing device comprises: a semiconductor heating and cooling device assembly and a pressurizing assembly; the semiconductor heating and cooling device assembly comprises a first side and a second side arranged along the axial direction of the pressurizing assembly, one of the first side and the second side is a heating end, and the other is a refrigeration end, and the heating end and the refrigeration end are reversed with the reversal of the positive and negative power supply; the first side is connected with the pressurizing assembly, and the second side is used for abutting against a substrate; and the pressurizing assembly is used for pressurizing the substrate. In this way, the semiconductor heating and cooling device assembly has excellent pressure resistance, has a shorter time than a heating wire, and thus the heating time is very short, and the target heating rate can be reached; by switching the positive and negative poles of the semiconductor heating and cooling device assembly, the refrigeration end and the heating end can be switched instantaneously, and thus the cooling speed is reduced, and the target cooling speed can be reached. In this way, the refrigeration and heating time is effectively shortened, the temperature is accurately controlled, the heating stability is improved, the cooling path is shortened, and thus the material deformation is reduced, and the yield and bonding precision of the apparatus are improved. BRIEF DESCRIPTION OF DRAWINGS

[0020] Those skilled in the art will understand that the provided drawings are for the purpose of better illustrating the present application and do not constitute any limitation on the scope of the present application. Among them:

[0021] Figure 1 It is a schematic diagram of the substrate bonding pressurizing device of the first embodiment of the present application;

[0022] Figure 2 It is a front view of the semiconductor heating and cooling device of the first embodiment of the present application;

[0023] Figure 3 It is a left view of the semiconductor heating and cooling device of the first embodiment of the present application;

[0024] Figure 4 It is a schematic diagram of the semiconductor heating and cooling device assembly of the first embodiment of the present application installed on the upper pressurizing assembly;

[0025] Figure 5 It is a schematic diagram of the semiconductor heating and cooling device assembly of the first embodiment of the present application installed on the lower pressurizing assembly;

[0026] Figure 6 It is a top view of the semiconductor heating and cooling device assembly of the first embodiment of the present application;

[0027] Figure 7 It is a front view of the semiconductor heating and cooling device assembly of the first embodiment of the present application;

[0028] Figure 8 It is a top view of the semiconductor heating and cooling device assembly of the second embodiment of the present application;

[0029] Figure 9 Front view of the semiconductor heating and cooling assembly of embodiment two of the present application.

[0030] In the drawings:

[0031] 100 - semiconductor heating and cooling assembly, 101 - semiconductor heating and cooling device, 101a - positive electrode, 101b - negative electrode, 110 - first side, 120 - second side, 140 - upper layer, 150 - lower layer;

[0032] 200 - pressurizing assembly, 210 - upper pressurizing assembly, 220 - lower pressurizing assembly, 230 - cooling unit, 230a - upper cooling unit, 230b - lower cooling unit, 231 - water cooling disc, 232 - temperature uniforming sheet, 233 - cushion block, 240 - pressurizing bellows, 250 - bonding pressurizing unit, 260 - supporting assembly, 270 - negative pressure assembly;

[0033] 300 - upper press plate;

[0034] 400 - base positioning clamp;

[0035] 500 - temperature sensor;

[0036] 600 - negative pressure cavity assembly. DETAILED DESCRIPTION

[0037] In order to make the objects, advantages and features of the present application clearer, the following further describes the present application in conjunction with the drawings and specific embodiments. It should be noted that the drawings are all very simplified and not drawn in proportion, and are only used to facilitate and clarify the purpose of assisting the description of the embodiments of the present application. In addition, the structures shown in the drawings are often part of the actual structures. In particular, the emphasis shown in each drawing is different, and sometimes different proportions are used.

[0038] As used in this specification, the singular forms “a,” “an” and “the” include plural referents unless the content clearly dictates otherwise. As used in this specification, the term “or” is generally employed in its sense of meaning “and / or” unless the content clearly dictates otherwise.

[0039] The embodiment of the present application provides a substrate bonding pressing device, a substrate bonding equipment and a substrate bonding method. The substrate bonding pressing device comprises a semiconductor heating cooler assembly and a pressing assembly. The semiconductor heating cooler assembly comprises a first side and a second side arranged along the axial direction of the pressing assembly. One of the first side and the second side is a heating end, and the other is a refrigeration end. The heating end and the refrigeration end are reversed with the reversal of the positive and negative poles of power supply. The first side is connected with the pressing assembly, and the second side is used for abutting against a substrate. The pressing assembly is used for pressing the substrate. In this way, the semiconductor heating cooler assembly has excellent pressure resistance, has a shorter time than a heating wire, and thus the heating time is very short, and the target temperature rising rate can be reached. By switching the positive and negative poles of the semiconductor heating cooler assembly, the refrigeration end and the heating end can be switched instantaneously, and thus the cold quantity transmission path is reduced, the cooling speed is shortened, and the target cooling speed can be reached. In this way, the refrigeration and heating time are effectively shortened, the temperature is accurately controlled, the heating stability is improved, the cold quantity transmission path is reduced, and thus the material deformation is reduced, and the yield and bonding precision of the equipment are improved. Further, the substrate bonding method comprises the following steps: arranging a substrate in a substrate bonding pressing device, supplying power to a semiconductor heating cooler assembly of the substrate bonding pressing device according to a preset positive and negative pole sequence, configuring the first side as a refrigeration end and the second side as a heating end, reversing the preset positive and negative pole sequence to supply power to the semiconductor heating cooler assembly, and reversing the heating end and the refrigeration end with the reversal of the positive and negative poles of the power supply. The step of reversing the preset positive and negative pole sequence is repeated at least once. In this way, the heating end and the refrigeration end of the semiconductor heating cooler assembly can be reversed between the first side and the second side, and the semiconductor heating cooling assembly is gradually heated or cooled in the preset temperature difference range through multiple reversals.

[0040] The following is described with reference to the accompanying drawings.

[0041] Embodiment one

[0042] Please refer to Figures 1 to 7 , Figure 1 It is a schematic view of the substrate bonding pressing device of the embodiment one of the present application. Figure 2 It is a front view of the semiconductor heating cooler of the embodiment one of the present application. Figure 3 It is a left view of the semiconductor heating cooler of the embodiment one of the present application. Figure 4 It is a schematic view of the semiconductor heating cooler assembly installed on the upper pressing assembly of the embodiment one of the present application. Figure 5 It is a schematic view of the semiconductor heating cooler assembly installed on the lower pressing assembly of the embodiment one of the present application. Figure 6 It is a top view of the semiconductor heating cooler assembly of the embodiment one of the present application. Figure 7Figure 1 is a front view of a semiconductor heating and cooling device according to an embodiment of the present application.

[0043] Referring to Figure 1 , the present embodiment provides a substrate bonding and pressing device, which comprises a semiconductor heating and cooling device 100 and a pressing assembly 200.

[0044] In combination Figure 2 With Figure 3 , the semiconductor heating and cooling device 100, for example, preferably comprises at least two semiconductor heating and cooling devices 101, the circuits of which are connected in series or in parallel, and the semiconductor heating and cooling device 101 is, for example, in a plate-like structure, and specifically, the size of the semiconductor heating and cooling device 101 is L*W=40mm*40mm, and through static simulation, the maximum deformation thereof under a pressure of 1500N is about 0.02um, and thus the pressure stability of the semiconductor heating and cooling device 101 is high. The semiconductor heating and cooling device 101 is based on the thermoelectric effect (Peltier effect), and utilizes the N-type and P-type semiconductor characteristics, and the heating and cooling time is very fast, and the thermal inertia is very small. The cooling and heating time is effectively shortened, the temperature is accurately controlled, and the heating stability is improved, thereby improving the yield and bonding accuracy of the equipment. The semiconductor heating and cooling device 101 has positive and negative electrodes. When the positive and negative electrodes are electrified, the temperature of one side of the two sides of the plate-like semiconductor heating and cooling device 101 is raised, and the temperature of the other side is lowered, the side with the raised temperature is referred to as the heating end, and the side with the lowered temperature is referred to as the cooling end. Changing the positive and negative directions of the semiconductor heating and cooling device 101 can lower the temperature of the side with the originally high temperature and raise the temperature of the side with the originally low temperature, thereby instantaneously converting the original heating end into the cooling end and instantaneously converting the original cooling end into the heating end. For example, when the electrode 101a is the positive electrode and the electrode 101b is the negative electrode, as shown in FIG. 1, the left side of the semiconductor heating and cooling device 101 is the cooling end and the right side is the heating end (the orientation of the left side and the right side is the orientation of the left side and the right side in FIG. 1); when the electrode 101a is the positive electrode and the electrode 101b is the negative electrode, the right side of the semiconductor heating and cooling device 101 is the cooling end and the left side is the heating end. As shown in FIG. 2. Figure 3 Figure 3 Figure 1 ​​As shown, the semiconductor heating and cooling assembly 100 is a plate structure, which can be a single layer or a multi-layer plate structure. The semiconductor heating and cooling assembly 100 includes a first side 110 and a second side 120 arranged along the axial direction of the pressing assembly 200. The first side 110 is connected to the pressing assembly 200, and the second side 120 is used to abut against a substrate to provide temperature to the substrate. The semiconductor heating and cooling assembly 100 uses a semiconductor heating and cooling device 101, which has excellent pressure resistance, shorter time to reach the target temperature rate (target temperature rate > 30℃ / min) compared to a heating wire, higher heating stability, reduced temperature oscillation, and reduced material deformation, thereby improving the precision of substrate bonding. According to the same principle as the semiconductor heating and cooling device 101, one of the first side 110 and the second side 120 is a heating end, and the other is a cooling end. The heating end and the cooling end are reversed with the positive and negative power supply. That is, when the temperature of the first side 110 increases and the temperature of the second side 120 decreases, the first side 110 is the heating end and the second side 120 is the cooling end; when the temperature of the second side 120 increases and the temperature of the first side 110 decreases, the first side 110 is the cooling end and the second side 120 is the heating end. In this way, by reversing the positive and negative poles of the semiconductor heating and cooling assembly 100, the cooling end and the heating end can be switched instantaneously, and the cooling end can be closer to the substrate, thereby reducing the transmission path and shortening the cooling speed, and achieving the target cooling speed (target cooling rate > 15℃ / min). In this embodiment, the substrate bonding and pressing device preferably includes two semiconductor heating and cooling assemblies 100, which are arranged on the pressing assembly 200 and on both sides of the substrate, respectively. In other embodiments, the semiconductor heating and cooling assembly 100 can also be multiple, such as three or four. When the number is three, one side of the substrate has one, and the other side has two; when the number is four, two are arranged on each side of the substrate.

[0045] The pressing assembly 200 is connected with the first side 110 of the semiconductor heating and cooling assembly 100. When the substrate is bonded, the pressing assembly 200 applies pressure, which is transmitted to the substrate through the semiconductor heating and cooling assembly 100, so as to pressurize the substrate. In the embodiment, the semiconductor heating and cooling assembly 100 is preferably two. The pressing assembly 200 preferably comprises an upper pressing assembly 210 and a lower pressing assembly 220. The upper pressing assembly 210 and the lower pressing assembly 220 can be similar to the square structure design, and the upper pressing assembly 210 and the lower pressing assembly 220 are arranged in axial opposite. Of course, the structure and shape of the upper pressing assembly 210 and the lower pressing assembly 220 can be set according to the actual situation by those skilled in the art. The substrate bonding and pressing device further comprises an upper pressing plate 300 and a substrate positioning clamp 400, which are used to clamp the substrate. The first side 110 of one semiconductor heating and cooling assembly 100 is connected with the upper pressing assembly 210, and the second side 120 of the semiconductor heating and cooling assembly 100 is connected with the upper pressing plate 300 (i.e. one semiconductor heating and cooling assembly 100 is arranged between the upper pressing assembly 210 and the upper pressing plate 300); the first side 110 of the other semiconductor heating and cooling assembly 100 is connected with the lower pressing assembly 220, and the second side 120 of the semiconductor heating and cooling assembly 100 is connected with the substrate positioning clamp 400 (the other semiconductor heating and cooling assembly 100 is arranged between the lower pressing assembly 220 and the substrate positioning clamp 400). In this way, the pressure can be transmitted to the substrate.

[0046] Further, after the substrate is bonded and pressed, the heating end of the semiconductor heating and cooling assembly 100 needs to be cooled. In combination with the above description, the substrate bonding and pressing device further comprises a cooling assembly 500, which is connected with the semiconductor heating and cooling assembly 100. The cooling assembly 500 is used to cool the heating end of the semiconductor heating and cooling assembly 100. Figure 4As shown, the pressurizing assembly 200 further comprises a cooling unit 230. The cooling unit 230 comprises an axially arranged water-cooled disc 231, a uniform temperature sheet 232, and a cushion block 233. One side of the uniform temperature sheet 232 is connected to the semiconductor heating and cooling assembly 100, and the other side of the uniform temperature sheet 232 is connected to the water-cooled disc 231. The uniform temperature sheet 232 is arranged between the semiconductor heating and cooling assembly 100 and the water-cooled disc 231, thereby increasing heat conduction and heat dissipation. The uniform temperature sheet 232 is used to uniformly control the temperature to which the substrate is subjected. Specifically, the uniform temperature sheet 232 is preferably graphite paper, and the thickness and size of the graphite paper can be set by those skilled in the art according to actual conditions. Of course, in other embodiments, the uniform temperature sheet 232 can also be a sheet of other materials or other structures that can uniformly control the temperature. Circulating low-temperature water or circulating coolant is arranged in the water-cooled disc 231, and the semiconductor heating and cooling assembly 100 is cooled by water cooling or coolant. Those skilled in the art can set the temperature of the liquid in the water-cooled disc 231 and the size and structure of the water-cooled disc 231 according to actual cooling temperature requirements. The cushion block 233 is, for example, a square structure arranged around the semiconductor heating and cooling assembly 100, and is used to protect the semiconductor heating and cooling assembly 100 and prevent mechanical damage to the semiconductor heating and cooling assembly 100. In this embodiment, the number of cooling units 230 is two. Specifically, the upper pressurizing assembly 210 of the pressurizing assembly 200 comprises one cooling unit, which is defined as an upper cooling unit 230a; and the lower pressurizing assembly 220 of the pressurizing assembly 200 comprises another cooling unit, which is defined as a lower cooling unit 230b. Preferably, the upper pressurizing assembly 210 further comprises an axially arranged pressurizing bellows 240 and a bonding pressurizing unit 250. One end of the pressurizing bellows 240 is connected to the bonding pressurizing unit 250, and the other end of the pressurizing bellows 240 is connected to the upper cooling unit 230a. The bonding pressurizing unit 250 is connected to an external pressurizing assembly, and is used to provide pressure for the upper pressurizing assembly 210; and the pressurizing bellows 240 moves axially under the action of the bonding pressurizing unit. Those skilled in the art can set the structure, shape, and connection relationship of the pressurizing bellows 240 and the bonding pressurizing unit 250 according to actual conditions. The lower pressurizing assembly 220 further comprises an axially arranged support assembly 260 and a negative pressure assembly 270. One side of the support assembly 260 is connected to the lower cooling unit 230b, and the other side of the support assembly 260 is connected to the negative pressure assembly (vacuumizing assembly) 270. Those skilled in the art can set the structure, shape, and connection relationship of the support assembly 260 and the negative pressure assembly 270 according to actual conditions. The support assembly 260 is used to provide support for the lower cooling unit 230b; and the negative pressure assembly 270 is used to provide negative pressure for a negative pressure cavity assembly 600.

[0047] Further, as shown in Figure 4 the substrate bonding and pressing device is configured to reverse the positive and negative poles of the power supply of the semiconductor heating and cooling assembly 100 at least once before the temperature measured by the temperature sensor 500 rises or falls to the final preset temperature. Further, the substrate bonding and pressing device is configured to set at least one intermediate preset temperature before the temperature measured by the temperature sensor 500 rises or falls to the final preset temperature. After the temperature measured by the temperature sensor 500 rises or falls to the intermediate preset temperature, the positive and negative poles of the power supply of the semiconductor heating and cooling assembly 100 are reversed, so that the heating end and the cooling end are constantly switched, thereby achieving the effect of gradual cooling. For example, after the pressure bonding is completed, cooling is required. The temperature of the second side 120 measured by the temperature sensor 500 is 200°C, and the temperature of the first side 110 is, for example, 150°C (the temperature of the heating end and the cooling end is generally not more than 100°C). At this time, the positive and negative poles of the semiconductor heating and cooling assembly 100 have not been reversed, and the second side 120 is the heating end. After reversing the positive and negative poles once, the second side 120 is the cooling end, and the first side 110 is the heating end. The temperature of the second side 120 decreases to, for example, 120°C, and the temperature of the first side 110 increases to, for example, 160°C. Therefore, the first side 110 needs to be cooled, and the positive and negative poles are reversed. The first side 110 is the cooling end, and the temperature decreases to, for example, 80°C. The second side 120 is the heating end, and the temperature increases to, for example, 130°C. At this time, the second side 120 needs to be cooled, and the positive and negative poles are reversed. The second side 120 is the cooling end, and the temperature decreases to, for example, 50°C. The first side 110 is the heating end, and the temperature increases to, for example, 90°C. After reversing the positive and negative poles multiple times, the cooling of the substrate bonding and pressing device is completed. Of course, in other embodiments, the positive and negative poles can be reversed once, and the positive and negative poles can be reversed more times, thereby gradually completing the cooling. In this embodiment, the temperature sensor 500 is a thermocouple, and of course, in other embodiments, the temperature sensor 500 can also be other temperature measuring components for detecting the temperature of the semiconductor heating and cooling assembly.

[0048] Further, the pressurizing assembly 200 includes an upper pressurizing assembly 210 and a lower pressurizing assembly 220, which are arranged in axial opposition. The substrate bonding pressurizing device further includes a negative pressure cavity assembly 600, which seals the upper pressurizing assembly 210 and the lower pressurizing assembly 220 to exhaust the gas between the upper pressurizing assembly 210 and the lower pressurizing assembly 220. During substrate bonding, the substrate needs to be in a negative pressure state. The negative pressure cavity assembly 600 is arranged to exhaust the gas in the space between the upper pressurizing assembly 210 and the lower pressurizing assembly 220, which is used for substrate bonding. Therefore, the negative pressure cavity assembly 600 can exhaust the gas in the space for substrate bonding. In the embodiment, the negative pressure cavity assembly 600 seals the upper press plate 300, the semiconductor heating and cooling assembly 100 connected to the upper press plate 300, the upper cooling unit 230a, the pressurizing bellows 240, the substrate positioning clamp 400, the semiconductor heating and cooling assembly 100 connected to the substrate positioning clamp 400, the lower cooling unit 230b, and the support assembly 260. The bonding pressurizing unit 250 of the upper pressurizing assembly 210 is arranged outside the negative pressure cavity assembly 600 and along the axial direction of the upper pressurizing assembly 210. The negative pressure assembly 270 of the lower pressurizing assembly 220 is arranged outside the negative pressure cavity assembly 600 and along the axial direction of the lower pressurizing assembly 220. Of course, the negative pressure assembly 270 can also be arranged at any position outside the negative pressure cavity assembly 600.

[0049] Further, as shown in Figure 2 、 Figure 6 and Figure 7 , because the size of the single semiconductor heating and cooling assembly 101 is small (for example, LxW: 40 mm x 40 mm), two or more semiconductor heating and cooling assemblies 101 can be arranged in series according to actual needs. Therefore, the assembly 100 includes at least two semiconductor heating and cooling assemblies 101. When the required bonding temperature is, for example, below 120°C, the at least two semiconductor heating and cooling assemblies 101 are arranged in the same layer along the radial direction of the pressurizing assembly 200. The heating end and the cooling end of the semiconductor heating and cooling assembly 101 arranged in the same layer (i.e., single layer) have the same direction. In this way, the semiconductor heating and cooling assembly 100 arranged in the single layer is formed, and the first side 110 and the second side 120 form a temperature difference. During pressurized bonding, the second side 120 is arranged as the heating end and faces the substrate. When cooling is required, the positive and negative electrodes are reversed, so that the heating end of the second side 120 is reversed to the cooling end, and cooling is completed. In the first embodiment, the semiconductor heating and cooling assembly 100 includes four semiconductor heating and cooling assemblies 101, which are arranged in series and in the single layer. Of course, in other embodiments, for example, when the size of the substrate is According to the size of the substrate, the corresponding semiconductor heating and cooling device 101 is arranged in 8*8 (320mm*320mm). The semiconductor heating and cooling device assembly 100 can also be 6 or 12 semiconductor heating and cooling devices 101 arranged in a single layer. Of course, the arrangement of the semiconductor heating and cooling device 101 in a single layer is not limited to below 120℃.

[0050] The embodiment also provides a substrate bonding device, which comprises the substrate bonding and pressing device as described above. The substrate bonding device has the beneficial effects brought by the substrate bonding and pressing device, which will not be described here. The structure and principle of other components of the substrate bonding device can refer to the prior art, which will not be described here.

[0051]

Embodiment Two

[0052] Please refer to Figures 8 to 9 , Figure 8 is a top view of the semiconductor heating and cooling device assembly of embodiment two of the present application; Figure 9 is a front view of the semiconductor heating and cooling device assembly of embodiment two of the present application.

[0053] The substrate bonding and pressing device of this embodiment two is the same as that of embodiment one, which will not be described here. Only the different points will be described below.

[0054] As a preferred, the semiconductor heating and cooling device assembly 100 comprises at least two semiconductor heating and cooling devices 101. Because the heating temperature of a single semiconductor heating and cooling device 101 does not exceed 240℃, and the temperature difference between the cooling end and the heating end does not exceed 100℃, otherwise the semiconductor heating and cooling device 101 is easy to be damaged. Therefore, when a higher heating temperature and a faster cooling speed are needed, at least two semiconductor heating and cooling devices 101 are arranged in a stack along the axial direction of the pressing assembly 200, and the heating end and the cooling end of the semiconductor heating and cooling device 101 arranged in a stack are in the same direction. In this embodiment two, the number of semiconductor heating and cooling devices 101 is eight, the circuits of the eight semiconductor heating and cooling devices 101 are arranged in series, and each layer is paved with four semiconductor heating and cooling devices 101 along the axial direction of the pressing assembly 200. The semiconductor heating and cooling device assembly 100 arranged in two layers is defined as the upper layer 140 and the lower layer 150, assuming that the upper surface of the upper layer 140 is the first side 110 of the semiconductor heating and cooling device assembly 100, and the lower surface of the lower layer 150 is the second side 120 of the semiconductor heating and cooling device assembly 100 (wherein the up and down directions refer to the direction of the arrow in the figure). Figure 9The second side 120 is the heating end, i.e. the lower surface of the lower layer 150 is the heating end, and the upper surface of the lower layer 150 is the cooling end. For example, when the temperature of the second side needs to be raised to 240°C, the higher the temperature of the heating end, the lower the temperature of the cooling end. In order to ensure that the temperature difference between the lower surface and the upper surface of the lower layer 150 is less than 100°C, i.e. to ensure that the temperature of the upper surface of the lower layer 150 is greater than 140°C, the lower surface of the upper layer 140 needs to be set as the heating end, so that the lower surface of the upper layer 140 can raise the temperature of the upper surface of the lower layer 150. Therefore, the direction of the heating end of the upper layer 140 and the heating end of the lower layer 150 needs to be consistent. Similarly, during cooling, the direction of the cooling end of the upper layer 140 and the cooling end of the lower layer 150 needs to be consistent.

[0055] Further, the embodiment also provides a substrate bonding method, comprising:

[0056] S1: Place a substrate (e.g. a bonding wafer) in the substrate positioning clamp 400 of the substrate bonding pressurizing device as described above. Of course, in other embodiments, the substrate is not limited to a bonding wafer.

[0057] S2: Seal the negative pressure cavity assembly 600 of the substrate bonding pressurizing device, for example, use the negative pressure assembly 270 to provide negative pressure to the negative pressure cavity assembly 600. Of course, an external negative pressure component can also be used to provide negative pressure to the negative pressure cavity assembly 600.

[0058] S3: The upper pressurizing assembly 210 is bonded downward to the position, and preferably the two semiconductor heating and cooling assemblies 100 are synchronously powered, the semiconductor heating and cooling assemblies 100 of the substrate bonding pressurizing device are powered in the preset positive and negative sequence, so that the first side 110 is configured as the cooling end and the second side 120 is configured as the heating end. In other embodiments, the two semiconductor heating and cooling assemblies 100 are not limited to synchronous power.

[0059] S4: The temperature sensor 500 measures the temperature of the second side 120 of the semiconductor heating and cooling assembly 100, and when the temperature of the second side 120 reaches the preset temperature, the temperature of the second side 120 of the semiconductor heating and cooling assembly 100 is preferably maintained for a period of time, so that the substrate completes the bonding. At this time, the preset temperature is the bonding temperature of the substrate, and the bonding of the substrate is completed at this temperature.

[0060] S4: reversing the preset positive and negative polarities for supplying power to the semiconductor heating and cooling assembly 100, so that the second side 120 is configured as a cooling end and the first side 110 is configured as a heating end, so that the semiconductor heating and cooling assembly 100 cools the substrate, in order to ensure that the semiconductor heating and cooling assembly 100 can continuously cool the substrate within a certain temperature difference range, the heating end and the cooling end are reversed with the reversal of the power supply positive and negative polarities, and the specific principle is as described above, and the cooling of the substrate is completed; wherein the step of reversing the preset positive and negative polarities is repeated at least once. In the substrate bonding method, when the temperature of the second side of the semiconductor heating and cooling assembly reaches a preset temperature, the preset positive and negative polarities are reversed; wherein the temperature of the second side is set to at least one preset temperature. Specifically, the temperature sensor 500 measures one preset temperature, and the preset positive and negative polarities are reversed once.

[0061] S5: when the temperature of the semiconductor heating and cooling assembly 100 measured by the temperature sensor reaches a certain preset temperature, preferably, the preset temperature is the cooling temperature after the substrate bonding is completed, the negative pressure cavity assembly 600 is opened, the upper pressure assembly 210 is reset, and the bonded substrate is taken out.

[0062] The substrate bonding method provided in the embodiment has the beneficial effects of the substrate bonding and pressing device, which will not be described here. The other steps of the substrate bonding method can refer to the prior art, which will not be described here.

[0063] In summary, in the substrate bonding and pressing device, the substrate bonding equipment and the substrate bonding method provided in the application, the substrate bonding and pressing device comprises a semiconductor heating and cooling assembly and a pressing assembly; the semiconductor heating and cooling assembly comprises a first side and a second side arranged along the axial direction of the pressing assembly, one of the first side and the second side is a heating end, and the other is a cooling end, and the heating end and the cooling end are reversed with the reversal of the power supply positive and negative polarities; the first side is connected with the pressing assembly, and the second side is used for abutting against a substrate; and the pressing assembly is used for pressing the substrate. In this way, the semiconductor heating and cooling assembly has excellent pressure resistance, has a shorter time than a heating wire, and thus the heating time is very short and the target heating rate can be reached; by converting the positive and negative polarities of the semiconductor heating and cooling assembly, the cooling end and the heating end can be instantaneously switched, the cooling path is shortened, the cooling speed is reduced, and the target cooling speed can be reached. In this way, the cooling and heating time is effectively shortened, the temperature is accurately controlled, the heating stability is improved, material deformation is reduced, and the yield and bonding accuracy of the equipment are improved.

[0064] The above description is only the description of the preferred embodiments of the present application, and is not any limitation on the scope of the present application. Any change and modification made by the person skilled in the art according to the above disclosure is within the protection scope of the claims.

Claims

1. A substrate bonding pressurization device, characterized in that, The application relates to a substrate bonding and pressing device. The semiconductor heating and cooling component comprises a first side and a second side arranged along the axial direction of the pressing component, one of the first side and the second side is a heating end, and the other is a refrigeration end, and the heating end and the refrigeration end are reversed with the positive and negative power supply; the first side is connected with the pressing component, and the second side is used for abutting against a substrate; and the pressing component is used for pressing the substrate. The semiconductor heating and cooling component comprises at least two semiconductor heating and cooling components, and the at least two semiconductor heating and cooling components are arranged in a stack along the axial direction of the pressing component, and the directions of the at least two semiconductor heating and cooling components in the stack from the heating end to the refrigeration end are the same. The semiconductor heating and cooling component comprises at least two semiconductor heating and cooling components, and the at least two semiconductor heating and cooling components are arranged in a stack along the axial direction of the pressing component, and the directions of the at least two semiconductor heating and cooling components in the stack from the heating end to the refrigeration end are the same.

2. The substrate bonding pressurization apparatus according to claim 1, wherein The substrate bonding and pressing device comprises a temperature sensor, the temperature sensor is arranged on the second side, and is used for measuring the temperature of the semiconductor heating and cooling component; and the substrate bonding and pressing device is configured to reverse the positive and negative power supply of the semiconductor heating and cooling component at least once before the temperature measured by the temperature sensor rises or falls to a final preset temperature.

3. The substrate bonding pressurization apparatus according to claim 1, wherein The substrate bonding and pressing device is configured to set at least one intermediate preset temperature before the temperature measured by the temperature sensor rises or falls to the final preset temperature, and the positive and negative power supply of the semiconductor heating and cooling component is reversed after the temperature measured by the temperature sensor rises or falls to the intermediate preset temperature.

4. The substrate bonding pressurization apparatus according to claim 3, wherein The pressing component further comprises a cooling unit, the cooling unit comprises a water cooling disc, a uniform temperature sheet and a cushion block; one side of the uniform temperature sheet is connected with the semiconductor heating and cooling component, the other side of the uniform temperature sheet is connected with the water cooling disc, and the cushion block is arranged on the outer periphery of the semiconductor heating and cooling component.

5. The substrate bonding pressurization apparatus according to claim 1, wherein The substrate bonding and pressing device comprises two semiconductor heating and cooling components, the pressing component comprises an upper pressing component and a lower pressing component, and the upper pressing component and the lower pressing component are arranged in axial opposition.

6. The substrate bonding pressurization apparatus according to claim 1, wherein The substrate bonding and pressing device comprises an upper pressing disc and a substrate positioning clamp, the upper pressing disc and the substrate positioning clamp are used for clamping the substrate; one semiconductor heating and cooling component is arranged between the upper pressing component and the upper pressing disc, and the other semiconductor heating and cooling component is arranged between the lower pressing component and the substrate positioning clamp.

7. The substrate bonding pressurization apparatus according to claim 6, wherein The substrate bonding and pressing device further comprises a negative pressure cavity component, the negative pressure cavity component is sealed and wrapped around the upper pressing component and the lower pressing component, and is used for discharging gas between the upper pressing component and the lower pressing component.

8. The substrate bonding pressurization apparatus according to claim 6, wherein The application relates to a substrate bonding and pressing device.

9. A substrate bonding apparatus characterized by comprising: The substrate bonding and pressing device according to any one of claims 1-8. The application relates to a substrate bonding and pressing device.

10. A method of bonding a substrate, characterized by, The substrate is arranged in the substrate bonding and pressing device. ​ The semiconductor heating-cooling device is powered in a preset positive-negative electrode sequence, a first side of the semiconductor heating-cooling device is configured as a cooling end, a second side of the semiconductor heating-cooling device is configured as a heating end, the semiconductor heating-cooling device comprises at least two semiconductor heating-cooling devices, the at least two semiconductor heating-cooling devices are arranged in a stack along an axial direction of the pressing device, and the at least two semiconductor heating-cooling devices in the stack have the same direction from the heating end to the cooling end; The preset positive-negative electrode sequence is reversed to power the semiconductor heating-cooling device, and the heating end and the cooling end are reversed with the reversal of the power positive-negative electrode; The step of reversing the preset positive-negative electrode sequence is repeated at least once.

11. The method of claim 10, wherein When the temperature of the second side of the semiconductor heating-cooling device reaches a preset temperature, the preset positive-negative electrode sequence is reversed; The temperature of the second side is set to at least one preset temperature.

12. The method of claim 10, wherein Before the step of powering the semiconductor heating-cooling device of the substrate bonding and pressing device in the preset positive-negative electrode sequence, the negative pressure cavity assembly of the substrate bonding and pressing device is sealed, and negative pressure is provided to the negative pressure cavity assembly.

Images