Semiconductor component

Abstract

A semiconductor assembly is provided. Generation of a failure in which an electrical connection of a terminal to a semiconductor element on a substrate is broken along with peeling of a sealing resin is suppressed. A semiconductor assembly (1) includes a case (5) having a frame portion (51) that surrounds a substrate (3) and a terminal land portion (52) that is formed projecting inward from an inner wall surface (51a) of the frame portion, a terminal (7) having one end (7B) that projects outward from the frame portion and another end (7A) that projects inward from the frame portion and is fixed to an upper surface (52a) of the terminal land portion, a wiring member (W) that electrically connects the terminal to a semiconductor element (4) on the substrate, and a sealing resin (8) that seals the other end of the terminal, the wiring member, and the semiconductor element in the case. A hole (54) is formed in the upper surface of the terminal land portion. The hole is filled with the sealing resin and is located at a position closer to the inner wall surface of the frame portion than a joint portion (S3) between the terminal and the wiring member.

Description

Technical Field

[0001] This invention relates to a semiconductor component. Background Technology

[0002] The semiconductor device has a substrate on which semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors), power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), and FWDs (Free Wheeling Diodes) are disposed, and the semiconductor device is used in inverter devices, etc. For example, a specific structure of such a semiconductor device is described in Patent Document 1.

[0003] In the semiconductor assembly described in Patent Document 1, a terminal block portion is formed within the housing portion. Terminals fixed to the terminal block portion are electrically connected to semiconductor elements on the substrate using wiring members (e.g., metal wires). In the semiconductor assembly described in Patent Document 1, the substrate, terminals, and wiring members are protected by being sealed within the housing portion by a sealing resin.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2017-152472 Summary of the Invention

[0005] The problem the invention aims to solve

[0006] In such a structure, for example during thermal cycling tests, thermal stress can sometimes cause the sealing resin to peel off from the housing. When the peeling of the sealing resin progresses to the terminal block and applies a load to the joint between the wiring component and the terminal, it may result in the joint peeling off from the terminal, the wiring component breaking, and an undesirable situation where the semiconductor device on the terminal and the substrate is de-energized.

[0007] The present invention was made in view of the following circumstances, and one object of it is to provide a semiconductor assembly capable of suppressing the occurrence of an undesirable situation in which the electrical connection between the terminal and the semiconductor element on the substrate is broken due to the peeling of the sealing resin.

[0008] Solution for solving the problem

[0009] A semiconductor assembly according to one embodiment of the present invention includes: a housing having a frame portion surrounding a substrate and a terminal block portion protruding inward from the inner wall surface of the frame portion; a terminal having one end extending outward from the frame portion and the other end extending inward from the frame portion and fixed to the upper surface of the terminal block portion; a wiring member electrically connecting the terminal to a semiconductor element on the substrate; and a sealing resin sealing the other end of the terminal, the wiring member, and the semiconductor element within the housing, wherein a hole is formed on the upper surface of the terminal block portion, the hole being filled with the sealing resin, and located on the inner wall surface side of the frame portion closer to the junction of the terminal and the wiring member.

[0010] Additionally, a semiconductor assembly according to one embodiment of the present invention includes: a housing having a frame portion surrounding a substrate and a terminal block portion protruding inward from the inner wall of the frame portion; a terminal having one end extending outward from the frame portion and the other end extending inward from the frame portion and fixed to the upper surface of the terminal block portion; a wiring member electrically connecting the terminal to a semiconductor element on the substrate; a sealing resin sealing the other end of the terminal, the wiring member, and the semiconductor element within the housing; and an adhesive portion bonding the frame portion to a base using an adhesive, wherein the terminal block portion has a hole extending from a first surface of the terminal block portion in contact with the sealing resin to a second surface of the terminal block portion in contact with the adhesive portion, the hole having an opening on one side of the first surface and an opening on the other side of the second surface, the opening on one side being filled with the sealing resin and the opening on the other side being filled with the adhesive.

[0011] The effects of the invention

[0012] According to the present invention, it is possible to suppress the occurrence of an undesirable situation in which the electrical connection between the terminal and the semiconductor element on the substrate is broken due to the peeling of the sealing resin in the semiconductor assembly. Attached Figure Description

[0013] Figure 1 This is a top view schematically illustrating a semiconductor component according to the first embodiment of the present invention.

[0014] Figure 2 This is a diagram showing the internal structure of a semiconductor component according to the first embodiment of the present invention.

[0015] Figure 3 This is a diagram showing the internal structure of a semiconductor component according to the first embodiment of the present invention.

[0016] Figure 4 This is a diagram showing the internal structure of a semiconductor component according to the first embodiment of the present invention.

[0017] Figure 5 This is a diagram showing the internal structure of a semiconductor component according to the second embodiment of the present invention.

[0018] Figure 6 This is a diagram showing the internal structure of a semiconductor component according to the third embodiment of the present invention.

[0019] Figure 7 This is a diagram showing the internal structure of a semiconductor component according to a modified example 1 of the first embodiment of the present invention.

[0020] Figure 8 This is a top view showing a portion of a semiconductor assembly according to a modified example 2 of the first embodiment of the present invention.

[0021] Figure 9 This is a top view showing the internal structure of a semiconductor component according to a modified example 2 of the first embodiment of the present invention.

[0022] Figure 10 This is a diagram showing the internal structure of a semiconductor component according to a modified example 3 of the first embodiment of the present invention.

[0023] Figure 11 This is a top view showing a terminal and its surrounding area of ​​a semiconductor component according to a modified example 3 of the first embodiment of the present invention.

[0024] Figure 12 This is a top view showing a terminal and its surrounding area of ​​a semiconductor component according to a modified example 4 of the first embodiment of the present invention.

[0025] Explanation of reference numerals in the attached figures

[0026] 1. Semiconductor component; 2. Substrate; 3. Laminated substrate; 4. Semiconductor element; 5. Housing; 6. Adhesive part; 7. Terminal; 7A. Inner terminal part; 7B. Outer terminal part; 8. Sealing resin; 17A. Through hole; 31. Metal plate; 32. Insulating plate; 33. Circuit pattern; 51. Frame part; 51a. Inner wall surface; 52. Terminal block part; 52a. Upper surface; 52b. Bottom surface; 54. Through hole; 54a. Opening; 54b. Opening; 56. Recess; 152. Terminal block part; 252. Terminal block part; 252a. Upper surface; 252c. Surface; 254. Through hole; 254a. Opening; 254b. Opening. Detailed Implementation

[0027] The following describes semiconductor components to which the present invention can be applied. Furthermore, in the following description, common or corresponding elements are labeled with the same or similar reference numerals, and repeated descriptions are omitted.

[0028] [First Implementation]

[0029] Figure 1 This is a schematic top view illustrating the semiconductor component 1 according to the first embodiment of the present invention. Figure 2 This indicates the internal structure of semiconductor component 1. Figure 1 A-A sectional view. Figure 3 This indicates the internal structure of semiconductor component 1. Figure 1 A-A' section view. Figure 4 yes Figure 1 An enlarged view of the portion indicated by reference numeral D in the attached figure. Furthermore, in Figure 3 For convenience, only the cross-section at the branch line from line A-A is shown. The semiconductor component 1 shown below is merely an example, and the semiconductor component of the present invention is not limited thereto and can be appropriately modified.

[0030] In the following description, the length, width, and height directions of semiconductor component 1 are designated as the X direction, Y direction, and Z direction, respectively. The X, Y, and Z directions are orthogonal to each other. For ease of explanation, the side indicated by the arrow in the Z direction is also referred to as the upper side, and the opposite side is referred to as the lower side. Furthermore, these directional designations are used to facilitate the explanation of the relative positional relationships of structural elements and do not represent absolute directions. For example, the Z direction (vertical direction) is not necessarily limited to the vertical direction; it can also be a horizontal direction. Additionally, in this specification, "top view" refers to the view of the upper surface of semiconductor component 1 from the side indicated by the arrow in the Z direction.

[0031] Furthermore, it is not necessary to label all elements in the accompanying drawings. Specifically, when multiple identical elements are shown in a single drawing, sometimes only a representative portion of these identical elements are labeled, and the remaining elements are omitted from the labeling. For example, in... Figure 1 In the figure, some of the terminals 7 are labeled with reference numeral 7, while the reference numeral 7 is omitted for the remaining terminals 7.

[0032] Semiconductor component 1 is used, for example, in power conversion devices such as power modules. In the first embodiment of the present invention, semiconductor component 1 is a power module constituting an inverting circuit. For example... Figure 2 As shown, the semiconductor component 1 includes a substrate 2, a plurality of stacked substrates 3 disposed on the substrate 2, a plurality of semiconductor elements 4 disposed on the stacked substrates 3, and a housing 5 surrounding and accommodating the plurality of stacked substrates 3 and the plurality of semiconductor elements 4.

[0033] The substrate 2 is a rectangular heat sink with a longer x-direction when viewed from above, serving as a heat sink to transfer heat from the laminated substrate 3 and the electronic components mounted on it to the outside. Furthermore, the substrate 2 is formed to cover the housing 5 from the back. The substrate 2 is formed using a material with high thermal conductivity that is not prone to warping even after heat treatment such as brazing. The substrate 2 can be, for example, a metal plate containing aluminum, copper, aluminum alloys, or copper alloys, and may also be surface-plated with Ni for rust prevention, etc. Alternatively, the substrate 2 can be a metal composite plate formed from a composite material of aluminum and silicon carbide or a composite material of magnesium and silicon carbide. The substrate 2 may include heat dissipation structures such as cooling fans. In this case, the substrate 2 is exemplarily formed using aluminum.

[0034] The laminated substrate 3 is disposed on the upper surface of the base plate 2 in such a way that it is surrounded by the housing 5. In the first embodiment, the three laminated substrates 3 constituting the U phase, V phase and W phase of the inverting circuit are arranged side by side in the X direction.

[0035] The laminated substrate 3 is formed by laminating metal layers and insulating layers. Specifically, for example, the laminated substrate 3 is a DBA (Direct Bonded Aluminum) substrate, a DCB (Direct Copper Bonding) substrate, or an AMB (Active Metal Brazing) substrate, formed by sequentially laminating a metal plate 31, an insulating plate 32, and a circuit pattern 33 from the side of the substrate 2.

[0036] The insulating plate 32 is formed using a material with excellent insulation and thermal conductivity. Specifically, the insulating plate 32 is formed from insulating materials such as ceramic materials like alumina, aluminum nitride, and silicon nitride, resin materials like epoxy, or epoxy resin materials using ceramic materials as fillers. The insulating plate 32 can also be referred to as an insulating layer or insulating film.

[0037] A metal plate 31 is formed on the lower surface of the insulating plate 32. The metal plate 31 can be formed to cover the area of ​​the lower surface of the insulating plate 32 except for the peripheral ends. The metal plate 31 is formed, for example, using copper, aluminum, or alloys thereof. Moreover, a Ni plating treatment can be applied to the surface for rust prevention, etc. The metal plate 31 is bonded to the upper surface of the base plate 2 via a bonding material S1. The bonding material S1 is formed, for example, using lead-free solders such as SnAgCu-based, SnSb-based, SnSbAg-based, SnCu-based, SnSbAgCu-based, SnCuNi-based, SnAg-based, etc. The bonding material S1 can also be a lead solder.

[0038] Multiple circuit patterns 33 are formed on the upper surface of the insulating plate 32. Each circuit pattern 33 is formed in an island-like manner on the lower surface of the insulating plate 32, excluding the peripheral ends, in a state of mutual electrical insulation. Each circuit pattern 33 is formed, for example, using the same material as the metal plate 31. Furthermore, Figure 1 The number and shape of the circuit pattern 33 shown are only an example and are not limited to it; they can be changed appropriately.

[0039] A semiconductor element 4 is disposed at a predetermined location on the upper surface of the circuit pattern 33 via a bonding material S2. The bonding material S2 is formed, for example, using the same material as the bonding material S1. Alternatively, the bonding material S2 can be a sintered material such as gold, silver, or copper. Thus, the electrode on the back side of the semiconductor element 4 (described later) is electrically connected to the circuit pattern 33. Furthermore, one end of a metal wire W (described later) serving as a wiring member is connected to a predetermined location on the upper surface of the circuit pattern 33. The other end of the metal wire W is connected to the electrode on the front side of the semiconductor element 4 (described later). Therefore, each circuit pattern 33 is electrically connected to the semiconductor element 4.

[0040] Semiconductor element 4 is formed from a semiconductor substrate such as silicon (Si), silicon carbide (SiC), or calcium nitride (GaN) into a rectangular shape when viewed from above. Semiconductor element 4 is, for example, composed of an RC (Reverse Conducting)-IGBT element that integrates the functions of an IGBT (Insulated Gate Bipolar Transistor) element and an FWD (Free Wheeling Diode) element.

[0041] Furthermore, the semiconductor element 4 is not limited to this and can also be a switching element such as an IGBT, a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), or a BJT (Bipolar Junction Transistor). Such a semiconductor element 4, for example, has a positive electrode as the main electrode on the back side, and a gate electrode as the control electrode and a negative electrode as the main electrode on the front side. Alternatively, the semiconductor element 4 can also be a diode element such as an SBD (Schottky Barrier Diode) or a PiN (P-intrinsic-N) diode. Such a semiconductor element 4 has a cathode electrode as the main electrode on the back side and an anode electrode as the main electrode on the front side. Additionally, as the semiconductor element 4, an RB (Reverse Blocking)-IGBT, which has sufficient withstand voltage against reverse bias, can also be used. Furthermore, the semiconductor element 4 can also be a control IC that connects to the aforementioned switching element within the semiconductor assembly 1 using wiring components such as metal wires W and controls the switching element. The shape, number, and location of semiconductor element 4 can be appropriately changed.

[0042] The outer casing 5 is a rectangular frame-like body following the outline of the base plate 2. It is a resin molded product integrally formed by an annular wall portion, i.e., the frame portion 51, which is formed upright in the Z direction, and a terminal block portion 52, which protrudes inward from the inner wall surface 51a of the frame portion 51. Terminals 7 are embedded in the outer casing 5 through an embedded molding process. One end of the terminal 7 extends outward from the frame portion 51, and the other end extends inward from the frame portion 51 and is fixed to the upper surface 52 of the terminal block portion 52, with the middle portion embedded in the outer casing 5. The outer casing 5 is formed using a resin material with excellent heat resistance and chemical resistance. This resin material may be, for example, a material containing PPS (Polyphenylenesulfide) resin, PBT (Polybutylene terephthalate) resin, POM (Polyoxymethylene) resin, PA (Polyamide) resin, etc. The outer casing 5 may also contain fillers such as ceramics.

[0043] The outer casing 5 is bonded and fixed to the upper surface of the base plate 2, for example, using an adhesive portion 6. In the first embodiment, the adhesive portion 6 is formed using an epoxy adhesive with epoxy resin as the main component, which has good adhesion to the sealing resin 8 described later. Alternatively, a silicone adhesive may be used instead of an epoxy adhesive for the adhesive portion 6. Furthermore, the adhesive portion 6 may also incorporate fillers such as ceramics.

[0044] In the first embodiment, the outer casing 5 is formed to surround three laminated substrates 3. However, it is not limited to this; it may also be formed to surround one laminated substrate 3, or even to surround four or more laminated substrates 3. Furthermore, the outer casing 5 may be a rectangular frame-like body following the outline of the laminated substrate 3, and is bonded and fixed to the upper surface of the laminated substrate 3 using adhesive portions 6. The outer casing 5 may at least be formed to surround the circuit pattern 33 formed on the laminated substrate 3.

[0045] The terminal block portion 52 is configured as a stepped portion that is lower than the upper surface of the frame portion 51 by one step. The upper surface 52a of the terminal block portion 52 is formed at a position lower than the upper surface of the frame portion 51.

[0046] Multiple terminals 7 are embedded in a pair of opposing wall portions along the width direction (Y direction) of the frame portion 51 by means of an insert forming process. The terminals 7 are formed by bending a plate-shaped body of metal such as copper, copper alloy, aluminum alloy, or iron alloy. The terminals 7 are not limited to being formed by bending a metal plate, and may also be cast parts. Ni plating treatment may be applied to the surface of the terminals 7 for purposes such as rust prevention.

[0047] Terminal 7 has an inner terminal portion 7A exposed on the upper surface 52a of terminal block portion 52 and an outer terminal portion 7B protruding from the upper surface of frame portion 51. More specifically, for terminal 7, the middle portion between the outer terminal portion 7B and the inner terminal portion 7A is embedded in frame portion 51. One end of terminal 7 extends outward from frame portion 51 as outer terminal portion 7B, and the other end extends inward from frame portion 51 as inner terminal portion 7A and is fixed to the upper surface 52a of terminal block portion 52. In addition, the back surface and at least a portion of the side surface of inner terminal portion 7A are embedded in the upper surface 52a of terminal block portion 52, thereby keeping inner terminal portion 7A fixed to the upper surface 52a of terminal block portion 52.

[0048] One end of terminal 7 (i.e., the outer terminal portion 7B) is electrically connected to the external wiring (not shown) of semiconductor component 1. The other end of terminal 7 (i.e., the inner terminal portion 7A) is connected to one end of a metal wire W, which serves as a wiring member, via a connector S3. The other end of the metal wire W is connected to the electrodes of semiconductor element 4 on the multilayer substrate 3, the circuit pattern 33 to which the back electrode of semiconductor element 4 is bonded, and the circuit pattern 33 connected to semiconductor element 4 via other wiring members. That is, terminal 7 is electrically connected to semiconductor element 4 on multilayer substrate 3 via metal wire W. For example, terminal 7 can be a control terminal for sending control signals to semiconductor element 4.

[0049] The metal wire W is made of materials such as copper, aluminum, gold alloy, copper alloy, or aluminum alloy. The diameter of the metal wire W is, for example, 100μm to 500μm. The metal wire W can be replaced with a lead frame or a strip wire.

[0050] Sealing resin 8 is filled into the space defined by the base plate 2 and the frame portion 51. The sealing resin 8 is filled until, for example, the upper surface reaches the upper surface of the frame portion 51. Using the sealing resin 8, various components, including at least a circuit pattern 33 comprising the laminated substrate 3, electronic components (e.g., semiconductor elements 4) mounted on the circuit pattern 33, the inner terminal portion 7A of the terminal 7, and the metal wire W, are sealed within the aforementioned space. That is, the sealing resin 8 seals the various components within the housing 5. Furthermore, in Figure 1 For convenience, the illustration of sealing resin 8 is omitted.

[0051] The sealing resin 8 is formed, for example, using an epoxy resin. The main component of the sealing resin 8 can be, for example, an aliphatic epoxy resin or alicyclic epoxy resin. Maleimide resin or cyanate ester resin may also be mixed into the main component of the sealing resin 8. Inorganic fillers and other additives may also be contained in the sealing resin 8.

[0052] Thermal stress concentrates near the interface of dissimilar materials due to differences in their physical properties (primarily differences in coefficients of thermal expansion and moduli of elasticity). For example, during a thermal cycling test on semiconductor component 1, thermal stress concentrates near the interface between housing 5 and sealing resin 8. This stress concentration can cause housing 5 and sealing resin 8 to delaminate. Typically, because housing 5 warps upwards (in the direction of the arrow in the Z direction), frame 51 delaminates from sealing resin 8 near the interface on the upper surface of frame 5. This delamination progresses downwards, then to the interface between terminal block 52 and sealing resin 8. When the delamination of sealing resin 8 progresses to terminal block 52 and applies a load to the joint S3 between wire W and terminal 7, a defect may occur where joint S3 detaches from terminal 7, wire W breaks, and terminal 7 is de-energized from semiconductor element 4 on laminated substrate 3.

[0053] Therefore, in the first embodiment, a through hole 54 is formed in the terminal block portion 52. The adhesion effect generated by the through hole 54 is used to suppress the peeling of the housing 5 from the sealing resin 8.

[0054] Specifically, the through hole 54 is a hole that extends from the upper surface 52a (first surface) of the terminal block portion 52, which contacts the sealing resin 8, to the bottom surface 52b (second surface) of the terminal block portion 52, which contacts the adhesive portion 6. The upper surface 52a has an opening 54a on one side, and the bottom surface 52b has an opening 54b on the other side. Inside the through hole 54, the sealing resin 8 is filled from the opening 54a on one side, and the adhesive (the adhesive constituting the adhesive portion 6) is filled from the opening 54b on the other side.

[0055] In the first embodiment, the sealing resin 8 flows into the through hole 54 from the opening 54a and cures, thereby achieving a bonding effect and increasing the bond strength between the housing 5 and the sealing resin 8. Therefore, peeling between the housing 5 and the sealing resin 8 caused by thermal stress is suppressed. Consequently, it is less likely for the joint S3 to peel off from the terminal 7 or for the metal wire W to break, thus suppressing the occurrence of defects such as the terminal 7 and the semiconductor element 4 on the laminated substrate 3 being de-energized. Furthermore, the adhesive flows into the through hole 54 from the opening 54b and cures, thereby achieving a bonding effect and increasing the bond strength between the housing 5 and the adhesive portion 6. Therefore, peeling between the housing 5 and the adhesive portion 6 caused by thermal stress can also be suppressed.

[0056] In the first embodiment, the sealing resin 8 filling from the opening 54a on one side and the adhesive filling from the opening 54b on the other side may or may not be in contact inside the through hole 54. Figure 3 As shown, preferably, the sealing resin 8 and the adhesive are in contact inside the through hole 54. That is, the through hole 54 is filled with the sealing resin 8 and adhesive material that have flowed into and cured therein. More preferably, the sealing resin 8 and the adhesive are in contact with each other inside the through hole 54 in such a way that one side of the sealing resin 8 is convex and the other side is concave. Figure 3 In this example, the adhesive is in contact with the sealant 8 in a convex shape on the sealant 8 side, and the sealant 8 is in a corresponding concave shape. Furthermore, in the first embodiment, to improve the adhesion between the adhesive portion 6 flowing into the through hole 54 and the sealant 8, both the adhesive portion 6 and the sealant 8 are made of materials with epoxy resin as the main agent. This further enhances the adhesion effect at the openings 54a and 54b, and improves the suppression of peeling between the outer shell 5 and the sealant 8, as well as peeling between the outer shell 5 and the adhesive portion 6.

[0057] In the first embodiment, not only is the bonding strength between the housing 5 and the sealing resin 8 improved, but the bonding strength between the housing 5 and the adhesive portion 6 is also improved. This prevents stress concentration near the interface between the housing 5 and the sealing resin 8, as well as stress concentration near the interface between the housing 5 and the adhesive portion 6. Therefore, it is possible to prevent peeling caused by stress concentration near either the former or the latter interface.

[0058] like Figures 1-4 As shown, the through hole 54 is located in the Y direction at a position closer to the inner wall surface 51a of the frame portion 51 than the joint S3 between the terminal 7 and the wire W. The bonding strength between the housing 5 and the sealing resin 8 is particularly enhanced near the through hole 54, which provides a fixing effect. Therefore, even if peeling of the frame portion 51 from the sealing resin 8 occurs near the upper surface of the frame portion 51 and progresses to the terminal block portion 52, it is easily prevented from peeling away near the joint S3 (e.g., ...). Figure 2The process is suppressed between the inner wall surface 51a and the through hole 54. Therefore, it is less likely for the joint S3 to peel off from the terminal 7 or for the metal wire W to break, and it is possible to suppress the occurrence of adverse conditions such as the terminal 7 and the semiconductor element 4 on the laminated substrate 3 being de-energized.

[0059] like Figure 1 and Figure 4 As shown, the through hole 54 is formed near the terminal 7 when viewed from above. By forming the through hole 54 near the terminal 7, the bonding strength between the housing 5 and the sealing resin 8 can be particularly improved near the terminal 7. Therefore, it is less likely for the joint S3 to peel off from the terminal 7 or for the metal wire W to break.

[0060] like Figure 1 and Figure 4 As shown, the other ends (inner terminal portions 7A) of a plurality of terminals 7 are arranged on the upper surface 52a of the terminal block portion 52, and a pair of through holes 54 are formed in such a way that the other ends (inner terminal portions 7A) of the plurality of terminals 7 are sandwiched in the middle. Figure 4 In this example, a pair of through holes 54 are formed in such a way that five inner terminal portions 7A arranged in the width direction (X direction) of the upper surface 52a are sandwiched in the middle. The through holes 54 are formed next to a portion of the terminals 7 when viewed from above, but the present invention is not limited to this and can be modified accordingly. For example, the through holes 54 may also be formed on both sides of all terminals 7. By forming the through holes 54 on both sides of all terminals 7, the bonding strength between the housing 5 and the sealing resin 8 can be further improved, and the peeling of the housing 5 and the sealing resin 8 caused by thermal stress can be further suppressed.

[0061] The diameter of the through hole 54 is chosen to be suitable for increasing the bonding strength between the housing 5 and the sealing resin 8 by utilizing the adhesion effect, thereby suppressing the peeling of the housing 5 and the sealing resin 8 caused by thermal stress. Specifically, the diameter of the through hole 54 is 0.5 mm or more and less than 3.0 mm. Preferably, the diameter of the through hole 54 is 0.5 mm or more and less than 1.5 mm. If the diameter of the through hole 54 is small, the sealing resin 8 cannot fill the inner side, resulting in a weak adhesion effect. If the diameter of the through hole 54 is large, the strength of the terminal block portion 52 is weak, and cracks may occur when bonding the metal wire W, reducing the bonding strength.

[0062] In the first embodiment, the through hole 54 is formed extending vertically downward relative to the upper surface 52a. Here, if shear and tensile loads act between the housing 5 and the sealing resin 8 due to thermal stress, the sealing resin 8 is subjected to an inwardly obliquely upward force relative to the housing 5 towards the frame portion 51. Figure 2The force of peeling in the direction of arrow B. Therefore, the through hole 54 can also be formed in a direction that extends downward relative to the upper surface 52a. For example, by forming the through hole 54 in a downward direction that is perpendicular to or nearly perpendicular to arrow direction B, a stronger adhesion effect is achieved against the force that is to peel in the direction of arrow B, further suppressing the peeling of the shell 5 from the sealing resin 8 caused by thermal stress.

[0063] The through hole 54 can also be replaced by a non-through hole formed extending vertically downward or obliquely downward from the upper surface 52a of the terminal block portion 52 to a predetermined depth. In this case, the bonding strength between the housing 5 and the sealing resin 8 will also be improved due to the adhesion effect.

[0064] The shape of the through hole 54 in the plane orthogonal to the through direction (Z direction in the first embodiment) is circular, but the through hole 54 of the present invention is not limited to this and can be appropriately modified. The shape of the through hole 54 in the plane orthogonal to the through direction can be, for example, elliptical or polygonal. In addition, in order to improve the fixing effect, it can also be a more complex shape (e.g., star-shaped).

[0065] [Second Implementation]

[0066] Figure 5 This is a diagram illustrating the internal structure of a semiconductor component according to the second embodiment of the present invention. Figure 5 The internal structure of the terminal block portion 152 and its surrounding area is shown in the figure.

[0067] The semiconductor assembly of the second embodiment has the same structure as the semiconductor assembly 1 of the first embodiment, except that the shape of the terminal block portion 152 is different from that of the terminal block portion 52 of the first embodiment.

[0068] like Figure 5 As shown, the terminal block portion 152 is formed such that the amount of its protrusion into the frame portion 51 gradually decreases from the upper part of the terminal block portion 152 toward the lower part. By forming the terminal block portion 152 in such a shape, the space between the laminated substrate 3 and the terminal block portion (mainly the space in the Y direction) is increased compared to the first embodiment. With this increase in space, for example, a larger insulating plate 32 can be arranged compared to the first embodiment. By arranging a larger insulating plate 32, the mounting area for electronic components increases, thus enabling the installation of more electronic components and larger electronic components with excellent heat resistance.

[0069] like Figure 5 As shown, the YZ cross-sectional shape of the terminal block portion 152 is wedge-shaped. In the second embodiment, this also enables a fixing effect and improves the bonding strength between the housing 5 and the sealing resin 8.

[0070] [Third Implementation]

[0071] Figure 6 This is a diagram illustrating the internal structure of a semiconductor component according to the third embodiment of the present invention. Figure 6 The internal structure of the terminal block portion 252 and its surrounding area is shown in the figure.

[0072] A through hole 254 is formed in the terminal block portion 252 extending in a direction inclined downward relative to the upper surface 252a. The semiconductor assembly of the third embodiment has the same structure as the semiconductor assembly of the second embodiment, except that the through hole 254 is formed in a direction inclined downward relative to the upper surface 252a and the opening 254b of the through hole 254 is formed on the surface 252c of the terminal block portion 252 opposite to the laminated substrate 3.

[0073] In the third embodiment, the through hole 254 is formed extending in an inclined direction perpendicular to or nearly perpendicular to the arrow direction B. Therefore, it provides a stronger adhesion effect against the force intended to peel in the arrow direction B, further suppressing the peeling of the housing 5 from the sealing resin 8 caused by thermal stress.

[0074] In the third embodiment, the interior of the through hole 254 is filled with sealing resin 8 not only through opening 254a but also through opening 254b. The interior of the through hole 254 is filled with the sealing resin 8 that has flowed in and cured from both openings. Therefore, a stronger adhesion effect is achieved, further suppressing the peeling of the outer shell 5 from the sealing resin 8 caused by thermal stress.

[0075] [evaluate]

[0076] For the first embodiment ( Figures 1-4 ), second implementation method ( Figure 5 ), third implementation method ( Figure 6 ), 4th implementation method ( Figures 1-4 Thermal cycling tests were performed on the semiconductor components of the comparative example and the semiconductor component of the first embodiment. The thermal cycling tests were liquid bath tests, with the low-temperature bath set to -40°C and the high-temperature bath set to 125°C. During the thermal cycling tests, the continuity based on the metal wire W was checked every 500 cycles. In addition, the semiconductor component of the comparative example has the same structure as the semiconductor component 1 of the first embodiment, except that the through hole 54 is not formed in the terminal block portion 52.

[0077] The multilayer substrate 3 of each semiconductor component in Embodiments 1 to 3 and the semiconductor component in the comparative example is a substrate made of a copper metal plate 31 with a multilayer thickness of 0.3 mm, a circuit pattern 33, and a silicon nitride insulating plate 32 with a thickness of 0.32 mm. Semiconductor elements 4 (Si IGBT elements) are soldered onto the multilayer substrate 3 using an N2 reflow oven, and copper lead frames (not shown) for main terminals are also soldered onto it. Next, the multilayer substrate 3 is soldered onto a substrate 2 (aluminum cooler) using an N2 reflow oven. Next, a housing 5 (PPS resin) with embedded terminals 7 is bonded to the substrate 2 using a silicone adhesive (TSE322 (manufactured by Momentive)). A through hole 54 with a diameter of 1 mm is formed in the housing 5. Furthermore, by curing the silicone adhesive, an adhesive portion 6 is formed.

[0078] Next, the control board of semiconductor element 4 is electrically connected to terminal 7 using a 300μm diameter metal wire W (aluminum). Then, after mixing aliphatic epoxy resin main agent (jER (registered trademark) 630 (manufactured by Mitsubishi Chemical Corporation)), curing agent (jER Cure (registered trademark) 113 (manufactured by Mitsubishi Chemical Corporation)), and inorganic filler (Excelica (registered trademark, average particle size: several μm to tens of μm (manufactured by Tokuyama Corporation)) in a weight ratio of 10:5:3, vacuum defoaming is performed, and this mixture is used as sealing resin 8 to fill the space specified in the substrate 2 and frame 51. The sealing resin 8 is then cured once at 100°C for one hour and then cured a second time at 150°C for three hours.

[0079] The semiconductor component of the fourth embodiment is the same as the semiconductor component 1 of the first embodiment, except that it uses an epoxy resin (CV5350AS (manufactured by Panasonic Corporation)) as the material for the adhesive part 6.

[0080] The following are the number of cycles when the conduction based on the metal wire W was not obtained in each semiconductor component of the first to fourth embodiments and the semiconductor component of the comparative example.

[0081] Implementation Method 1: 1500 cycles

[0082] Implementation Method 2: 1500 cycles

[0083] Implementation method 3: 2000 cycles

[0084] Implementation method 4: 2000 cycles

[0085] Comparative example: 1000 cycles

[0086] As described above, in the comparative example semiconductor assembly where no through-hole for bonding effect is formed in the terminal block portion, conduction based on the metal wire W cannot be achieved after a maximum of 1000 cycles. However, in the semiconductor assemblies of the first to fourth embodiments where a through-hole for bonding effect is formed in the terminal block portion, conduction based on the metal wire W can be ensured for more than 1000 cycles. Based on this result, it is determined that by forming a through-hole in the terminal block portion, thereby increasing the number of cycles before the sealing resin 8 peels off, the occurrence of defects such as the electrical connection between the terminal 7 and the semiconductor element 4 on the laminated substrate 3 being broken can be suppressed.

[0087] Furthermore, in the fourth embodiment, the adhesive portion 6 is formed using an epoxy resin-based material, similar to the sealing resin 8. Therefore, compared to the first embodiment, the adhesion between the adhesive portion 6 and the sealing resin 8 is improved. This improved adhesion indicates that, compared to the first embodiment, the sealing resin 8 is more firmly fixed within the through hole 54, and the bonding strength between the outer shell 5 and the sealing resin 8 is increased, making it less likely for the outer shell 5 and the sealing resin 8 to peel off.

[0088] Next, the semiconductor components of variations 1 to 5 of the present invention will be described. Hereinafter, variations 1 to 5 will be described as variations of the first embodiment, but the structure of these variations 1 to 5 can also be applied to any of the second to fourth embodiments.

[0089] [Variation Example 1]

[0090] Figure 7 This is a diagram showing the internal structure of a semiconductor component according to a modified example 1 of the first embodiment of the present invention. Figure 7 The internal structure of the terminal block portion 52 and its surrounding area is shown in the image.

[0091] like Figure 7 As shown, in Modified Example 1, the through hole 54 is a tapered shape with its inner diameter gradually increasing from the upper surface 52a of the terminal block portion 52 downwards (towards the bottom surface 52b). By forming the through hole 54 in such a shape, when a load is applied between the housing 5 and the sealing resin 8 due to thermal stress, the sealing resin 8 filling the through hole 54 bites into the inner wall surface of the through hole 54 like a wedge. Therefore, a higher adhesion effect can be achieved.

[0092] [Variation Example 2]

[0093] Figure 8 This is a partial top view of a semiconductor assembly according to a modified example 2 of the first embodiment of the present invention. Figure 9 This represents the internal structure of the semiconductor component in Modified Example 2. Figure 8 The C-C line sectional view.

[0094] In variation example 2, such as Figure 8 and Figure 9 As shown, a recess 56 is formed on the upper surface 52a of the terminal block portion 52. The recess 56 is, for example, a V-groove formed along the entire length of the terminal block portion 52 in the X direction and filled with sealing resin 8. The recess 56 is located in the Y direction closer to the inner wall surface 51a of the frame portion 51 than the joint S3 between the terminal 7 and the wire W. More specifically, the recess 56 is formed at the same position in the Y direction as the opening 54a of the through hole 54. Incidentally, the opening 54a is formed within the recess 56. That is, the through hole 54 communicates with the recess 56, and the through hole 54 is a hole that extends from the recess 56 to the bottom surface 52b of the terminal block portion 52.

[0095] The adhesion effect achieved by the sealant 8 flowing into the recess 56 and curing ensures that even if the peeling of the frame portion 51 from the sealant 8 at the interface near the upper surface of the frame portion 51 progresses to the terminal block portion 52, it is easily prevented near the joint portion S3 (e.g., Figure 8 and Figure 9 In the middle, the progress is suppressed by the inner wall surface 51a and the through hole 54, and the inner wall surface 51a and the recess 56.

[0096] [Variation Example 3]

[0097] Figure 10 This is a diagram showing the internal structure of a semiconductor component according to a modified example 3 of the first embodiment of the present invention. Figure 10 The internal structure of the terminal block portion 52 and its surrounding area is shown in the image. Figure 11 This is a top view showing a terminal 7 and its surrounding area of ​​the semiconductor component in Modified Example 3.

[0098] In variation example 3, such as Figure 10 and Figure 11 As shown, a through hole 17A is formed on the inner terminal portion 7A exposed on the upper surface 52a of the terminal block portion 52. The through hole 54, when viewed from above, at least partially overlaps with and communicates with the through hole 17A. The through hole 54 is located directly below the through hole 17A. Figure 10 and Figure 11 In this example, through hole 54 and through hole 17A are concentric holes of the same diameter, forming a continuous through path. Sealing resin 8 fills the through path formed by through hole 54 and through hole 17A. Therefore, compared to a structure where through hole 17A is not formed in the inner terminal portion 7A, a higher adhesion effect can be obtained.

[0099] [Variation Example 4]

[0100] Figure 12 This is a top view showing a terminal 7 and its surrounding area of ​​a semiconductor component according to a modified example 4 of the first embodiment of the present invention.Figure 12 As shown, in Modification 4, a pair of through holes 54 are formed in such a way that the other end (inner terminal portion 7A) of one terminal 7 disposed on the upper surface 52a of the terminal block portion 52 is sandwiched in the middle. More specifically, a pair of through holes 54 are formed on both sides of the other end (inner terminal portion 7A) of a portion of the terminals 7 disposed on the upper surface 52a of the terminal block portion 52, or on both sides of the other end of all the terminals 7, in such a way that the other end is sandwiched in the middle. Near the inner terminal portion 7A located in the middle of the position sandwiched by the pair of through holes 54, the bonding strength between the housing 5 and the sealing resin 8 is improved. Therefore, it is not easy for the joint S3 to peel off from the inner terminal portion 7A or for the metal wire W near the inner terminal portion 7A to break. It is possible to suppress the occurrence of the defective situation where the terminal 7 and the semiconductor element 4 on the laminated substrate 3 are de-energized.

[0101] [Variation Example 5]

[0102] Modification 5 of the semiconductor assembly has the same structure as the semiconductor assembly 1 of the first embodiment, except that a non-through hole is formed in the terminal block portion 52 instead of the through hole 54. This non-through hole is formed from the upper surface 52a of the terminal block portion 52 to the middle and stops there, without penetrating the terminal block portion 52. In other words, the non-through hole is a recessed shape.

[0103] By forming the non-through hole in this shape, it is easier to fill the non-through hole with sealing resin 8 compared to the first embodiment. Therefore, the manufacturing process can be simplified. Using such a non-through hole, a holding effect can also be achieved against forces intended to peel in the direction of arrow B, suppressing peeling between the housing 5 and the sealing resin 8 caused by thermal stress. Furthermore, the non-through hole is located in the Y direction closer to the inner wall surface 51a of the frame portion 51 than the joint S3 between the terminal 7 and the wire W. Therefore, even if peeling of the frame portion 51 and the sealing resin 8 from the upper surface of the frame portion 51 progresses to the terminal block portion 52, this progress can be suppressed near the joint S3. Therefore, it is less likely for the joint S3 to peel off from the terminal 7 or for the wire W to break, suppressing the occurrence of adverse conditions such as the terminal 7 and the semiconductor element 4 on the laminated substrate 3 being de-energized.

[0104] This embodiment and its variations have been described, but as other embodiments, the above embodiments and variations can be combined in whole or in part.

[0105] Furthermore, this embodiment is not limited to the above-described embodiments and variations. Various changes, substitutions, and modifications can be made without departing from the spirit of the technical concept. Moreover, if the technical concept can be realized in different ways using technological advancements or derived technologies, this method can also be used for implementation. Therefore, the claims cover all embodiments that can be included within the scope of the technical concept.

[0106] The following describes the features of the above-described embodiments.

[0107] The semiconductor assembly described in the above embodiments includes: a housing having a frame portion surrounding a substrate and a terminal block portion protruding inward from the inner wall surface of the frame portion; a terminal having one end extending outward from the frame portion and the other end extending inward from the frame portion and fixed to the upper surface of the terminal block portion; a wiring member electrically connecting the terminal to a semiconductor element on the substrate; and a sealing resin sealing the other end of the terminal, the wiring member, and the semiconductor element within the housing, wherein a hole is formed on the upper surface of the terminal block portion, the hole being filled with the sealing resin, and located on the inner wall surface side of the frame portion closer to the junction of the terminal and the wiring member.

[0108] Furthermore, in the semiconductor assembly described in the above embodiments, the hole penetrates the terminal block portion.

[0109] Furthermore, in the semiconductor assembly described in the above embodiments, the hole is formed extending in a direction perpendicular or inclined to the upper surface of the terminal block portion.

[0110] Furthermore, in the semiconductor assembly described in the above embodiments, the hole is a tapered shape in which the diameter increases from the upper surface of the terminal block portion downwards.

[0111] Furthermore, in the semiconductor assembly described in the above embodiments, a recess is formed on the upper surface of the terminal block portion, the recess is filled with the sealing resin, and is located on the inner wall side of the frame portion, which is closer to the joint portion than the joint portion.

[0112] Additionally, the semiconductor assembly described in the above embodiments includes: a housing having a frame portion surrounding a substrate and a terminal block portion protruding inward from the inner wall of the frame portion; a terminal having one end extending outward from the frame portion and the other end extending inward from the frame portion and fixed to the upper surface of the terminal block portion; a wiring member electrically connecting the terminal to a semiconductor element on the substrate; a sealing resin sealing the other end of the terminal, the wiring member, and the semiconductor element within the housing; and an adhesive portion bonding the frame portion to a base using an adhesive. The terminal block portion has a hole extending from a first surface of the terminal block portion in contact with the sealing resin to a second surface of the terminal block portion in contact with the adhesive portion. The hole has an opening on one side of the first surface and an opening on the other side of the second surface. The opening on one side is filled with the sealing resin, and the opening on the other side is filled with the adhesive.

[0113] Furthermore, in the semiconductor assembly described in the above embodiments, the sealing resin is in contact with the adhesive inside the hole.

[0114] Furthermore, in the semiconductor assembly described in the above embodiments, the first surface is the upper surface of the terminal block portion that contacts the sealing resin, and the second surface is the bottom surface of the terminal block portion that contacts the adhesive portion.

[0115] Furthermore, in the semiconductor component described in the above embodiments, the hole is formed extending in a direction perpendicular or inclined to the first surface.

[0116] Furthermore, in the semiconductor component described in the above embodiments, the hole is a tapered shape in which the diameter increases from the opening on one side toward the opening on the other side.

[0117] Furthermore, in the semiconductor component described in the above embodiments, a recess is formed on the first surface, and the recess is filled with the sealing resin.

[0118] Furthermore, in the semiconductor assembly described in the above embodiments, the sealing resin and the adhesive portion are formed using epoxy resin.

[0119] Furthermore, in the semiconductor assembly described in the above embodiments, the hole is located on the inner wall side of the frame portion, closer to the junction of the terminal and the wiring member.

[0120] Furthermore, in the semiconductor assembly described in the above embodiments, the amount of the terminal block portion protruding inward toward the frame portion gradually decreases from the upper part of the terminal block portion toward the lower part.

[0121] Furthermore, in the semiconductor component described in the above embodiments, the diameter of the hole is 0.5 mm or more and less than 3.0 mm. Preferably, the diameter of the through hole 54 is 0.5 mm or more and less than 1.5 mm.

[0122] Furthermore, in the semiconductor assembly described in the above embodiments, the frame portion and the terminal block portion are integrally formed molded articles.

[0123] Furthermore, in the semiconductor assembly described in the above embodiments, the other ends of a plurality of terminals are arranged on the upper surface of the terminal block portion, and a pair of holes are formed in such a way that the other ends of the plurality of terminals are sandwiched in the middle.

[0124] Furthermore, in the semiconductor assembly described in the above embodiments, a pair of holes are formed such that the other end of one of the terminals disposed on the upper surface of the terminal block portion is sandwiched in the middle.

[0125] Furthermore, in the semiconductor assembly described in the above embodiments, the hole is located directly below the terminal, and a through hole concentric with the hole formed directly below the terminal is formed in the terminal. The sealing resin fills the through hole formed in the terminal and the hole formed directly below the terminal.

[0126] Furthermore, in the semiconductor assembly described in the above embodiments, the wiring component is a metal wire.

[0127] Industrial availability

[0128] As described above, the present invention has the effect of suppressing the occurrence of undesirable situations where the electrical connection between the terminal and the semiconductor element on the substrate is broken due to the peeling of the sealing resin, and is particularly useful for semiconductor components.

Claims

1. A semiconductor component, wherein, The semiconductor component includes: The housing has a frame portion surrounding the substrate and a terminal block portion protruding inward from the inner wall of the frame portion; A terminal, one end of which extends outward from the frame portion and the other end extends inward from the frame portion and is fixed to the upper surface of the terminal block portion; Wiring components that electrically connect the terminals to semiconductor elements on the substrate; A sealing resin that seals the other end of the terminal, the wiring component, and the semiconductor element within the housing; and The adhesive part uses an adhesive to bond the frame to the base. The terminal block portion has a hole extending from a first surface of the terminal block portion that contacts the sealing resin to a second surface of the terminal block portion that contacts the adhesive portion. The hole has an opening on one side of the first surface. The second surface has an opening on the other side. The sealing resin is filled through the opening on one side, and the adhesive is filled through the opening on the other side.

2. The semiconductor component according to claim 1, wherein, Inside the hole, the sealing resin comes into contact with the adhesive.

3. The semiconductor component according to claim 1 or 2, wherein, The first surface is the upper surface of the terminal block that contacts the sealing resin. The second surface is the bottom surface of the terminal block that contacts the adhesive portion.

4. The semiconductor component according to claim 1 or 2, wherein, The hole is formed in a direction that extends perpendicularly or obliquely relative to the first surface.

5. The semiconductor component according to claim 1 or 2, wherein, The hole becomes a tapered shape with its diameter increasing as it moves from an opening on one side toward an opening on the other side.

6. The semiconductor component according to claim 1 or 2, wherein, A recess is formed on the first surface. The recess is filled with the sealing resin.

7. The semiconductor component according to claim 1 or 2, wherein, The sealing resin and the adhesive portion are formed using epoxy resin.

8. The semiconductor component according to claim 1 or 2, wherein, The hole is located on the inner wall side of the frame portion, closer to the junction of the terminal and the wiring member.

9. The semiconductor component according to claim 1 or 2, wherein, The amount of the terminal block protruding inward toward the frame gradually decreases from the upper part of the terminal block toward the lower part.

10. The semiconductor component according to claim 1 or 2, wherein, The diameter of the hole is greater than 0.5 mm and less than 3.0 mm.

11. The semiconductor component according to claim 1 or 2, wherein, The frame portion and the terminal block portion are integrally formed molded articles.

12. The semiconductor component according to claim 1 or 2, wherein, The other end of a plurality of terminals is arranged on the upper surface of the terminal block. A pair of holes are formed in such a way that the other ends of the plurality of terminals are clamped in the middle.

13. The semiconductor component according to claim 1 or 2, wherein, A pair of holes are formed in such a way that the other end of one of the terminals disposed on the upper surface of the terminal block is clamped in the middle.

14. The semiconductor component according to claim 1 or 2, wherein, The hole is located directly below the terminal. A through hole is formed on the terminal, concentric with the hole formed directly below it. The sealing resin fills the through hole formed in the terminal and the hole formed directly below the terminal.

15. The semiconductor component according to claim 1 or 2, wherein, The wiring component is a metal wire.

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