Light-emitting element, method for manufacturing the same, and display device

Abstract

Disclosed are a light-emitting element, a method for manufacturing the light-emitting element, and a display device. The light-emitting element includes: a semiconductor core, at least a portion of which extends in one direction and includes a first end, a second end, and a main body portion between the first and second ends; a first electrode layer disposed to surround the second end of the semiconductor core; a second electrode layer disposed to surround at least the first end of the semiconductor core and spaced apart from the first electrode layer; and an insulating layer disposed to surround the semiconductor core, the first electrode layer, and the second electrode layer, wherein the second end of the semiconductor core has a diameter smaller than a diameter of the main body portion.

Description

Technical Field

[0001] The present invention relates to a light emitting element, a method for manufacturing the same, and a display device. Background Art

[0002] The importance of display devices has increased with the development of multimedia. Therefore, various types of display devices such as organic light emitting display (OLED) devices and liquid crystal display (LCD) devices are being used.

[0003] A display panel such as an OLED panel or an LCD panel is a device included in a display device to display an image. Among these display panels, a light-emitting element can be provided as a light-emitting display panel, and examples of light-emitting diodes (LEDs) include organic LEDs using organic materials as fluorescent materials and inorganic LEDs using inorganic materials as fluorescent materials. Summary of the Invention

[0004] Technical issues

[0005] The disclosed aspects provide a light emitting element and a method of manufacturing the same, the light emitting element being manufactured by growing a semiconductor crystal and including electrode layers formed to be spaced apart from each other in the same process.

[0006] The disclosed aspects also provide a display device including a light emitting element and electrodes in contact with different electrode layers.

[0007] It should be noted that the disclosed aspects are not limited thereto, and other aspects not mentioned here will be apparent to those of ordinary skill in the art through the following description.

[0008] Technical Solution

[0009] According to the disclosed embodiments, the light-emitting element includes: a semiconductor core having at least a partial area extending in one direction and including a first end, a second end, and a main body portion between the first end and the second end; a first electrode layer arranged to surround the second end of the semiconductor core; a second electrode layer arranged to surround at least the first end of the semiconductor core and be spaced apart from the first electrode layer; and an insulating film arranged to surround the semiconductor core, the first electrode layer, and the second electrode layer, wherein the second end of the semiconductor core has a diameter smaller than a diameter of the main body portion.

[0010] The first electrode layer may be spaced apart from the body portion to surround at least a partial region of the second end portion, and the second electrode layer may surround the first end portion and the body portion.

[0011] In the first electrode layer, a thickness of one side adjacent to the body portion may be smaller than a thickness of another side opposite to the one side.

[0012] In the main body portion, a diameter of a region adjacent to the first end may be larger than a diameter of a region adjacent to the second end.

[0013] The first end may have an inclined outer surface.

[0014] The semiconductor core may include a first semiconductor layer, an active layer surrounding at least a portion of the first semiconductor layer, and a second semiconductor layer surrounding a portion of the first semiconductor layer and the active layer, wherein the first electrode layer may be in contact with the first semiconductor layer and the second electrode layer may be in contact with the second semiconductor layer.

[0015] The first semiconductor layer may include a first portion extending in one direction, a second portion located on one side of the first portion, and a third portion located on the other side of the first portion and extending in one direction, wherein the second portion may have an inclined outer surface.

[0016] A diameter of the third portion may be smaller than a diameter of the first portion, and an outer surface of the third portion may be recessed from an outer surface of the first portion toward a center of the first semiconductor layer.

[0017] The first electrode layer may be disposed to surround a partial region of an outer surface of the third portion while being spaced apart from the first portion, and an end surface of the third portion opposite to the first portion may be exposed.

[0018] The active layer may be provided around an outer surface of the first portion.

[0019] The first semiconductor layer may be doped with impurities of the first conductive type, the second semiconductor layer may be doped with impurities of the second conductive type, the first semiconductor layer may include a doped region, in which at least a portion of the second portion is doped with impurities of the second conductive type, and the active layer may also be arranged between the doped region and the second semiconductor layer.

[0020] According to a disclosed embodiment, a method for manufacturing a light-emitting element includes: forming a semiconductor core on a lower substrate, the semiconductor core including a first end, a second end, and a main body portion between the first end and the second end; forming a first electrode layer surrounding at least a portion of the second end of the semiconductor core and a second electrode layer surrounding the first end and the main body portion and spaced apart from the first electrode layer; and forming an insulating film around the first electrode layer, the second electrode layer, and the semiconductor core, and performing separation from the lower substrate.

[0021] In the semiconductor core, a diameter of the second end portion may be smaller than a diameter of the main body portion, and an outer surface of the second end portion may have a shape recessed from an outer surface of the main body portion.

[0022] The steps of forming the first and second electrode layers may be performed by depositing materials of the first and second electrode layers on an outer surface of the semiconductor core, and materials may not be deposited between the second end portion and the body portion.

[0023] The steps of forming a semiconductor core may include: forming a first mask layer set on a lower substrate, a second mask layer set on the first mask layer, and an etching hole penetrating the first mask layer and the second mask layer to partially expose the lower substrate; growing a first semiconductor layer along the etching hole and removing the second mask layer to expose a portion of the first semiconductor layer; forming an active layer and a second semiconductor layer on the exposed first semiconductor layer; and removing the first mask layer.

[0024] A diameter of the etching hole of the first mask layer may be smaller than a diameter of the etching hole of the second mask layer.

[0025] The first semiconductor layer may include a first portion extending in one direction, a second portion located on one side of the first portion, and a third portion located on the other side of the first portion and extending in the one direction, wherein the third portion may be formed by growing along the etching hole of the first mask layer, and the first portion may be formed by growing along the etching hole of the second mask layer.

[0026] According to a disclosed embodiment, a display device includes a substrate, a first electrode arranged on the substrate, a second electrode arranged on the substrate and spaced apart from the first electrode, and at least one light-emitting element arranged between the first electrode and the second electrode, wherein the light-emitting element includes: a semiconductor core having at least a partial area extending in one direction and including a first end, a second end, and a main body between the first end and the second end; a first electrode layer arranged to surround the second end of the semiconductor core; a second electrode layer arranged to at least surround the first end of the semiconductor core and spaced apart from the first electrode layer; and an insulating film arranged to surround the semiconductor core, the first electrode layer, and the second electrode layer, wherein the second end of the semiconductor core has a diameter smaller than a diameter of the main body.

[0027] The first electrode layer may be spaced apart from the body portion to surround at least a partial region of the second end portion, and the second electrode layer may surround the first end portion and the body portion.

[0028] The display device may further include a first contact electrode in contact with the first electrode and the second electrode layer, and a second contact electrode in contact with the second electrode and the first electrode layer.

[0029] At least a portion of the insulating film of the light-emitting element may be removed to partially expose the first electrode layer and the second electrode layer, the first contact electrode may contact the exposed second electrode layer, and the second contact electrode may partially contact the exposed first electrode layer and the second end portion of the semiconductor core.

[0030] The display device may include a first pixel and a second pixel, the light-emitting element may include a first light-emitting element arranged in the first pixel and a second light-emitting element arranged in the second pixel, and the diameter of the central portion of the first light-emitting element may be smaller than the diameter of the central portion of the second light-emitting element.

[0031] The first light emitted from the first light emitting element may have a central wavelength band shorter than a central wavelength band of the second light emitted from the second light emitting element.

[0032] Details of other embodiments are included in the detailed description and accompanying drawings.

[0033] Beneficial effects

[0034] According to one embodiment, a light-emitting element can be manufactured by growing a semiconductor crystal, has a shape in which the diameter of some regions is smaller than the diameter of other regions, and includes a plurality of electrode layers formed in the same process to be spaced apart from each other. Because the material of the electrode layer is not deposited on the region where the diameter changes, the electrode layers can be formed to be spaced apart from each other.

[0035] Therefore, a light emitting element according to one embodiment may include a plurality of electrode layers that are not directly connected to each other, and a display device may include the light emitting element so that different electrodes may be electrically connected to the electrode layers of the light emitting element.

[0036] The effects according to the embodiments are not limited to the above-exemplified contents, and more various effects are included in the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 is a schematic diagram of a light emitting element according to an embodiment.

[0038] Figure 2 yes Figure 1 Schematic exploded perspective view of a light emitting element.

[0039] Figure 3 It shows Figure 1 Schematic diagram of a cross section of a light-emitting element.

[0040] Figures 4 to 13 Schematic diagram illustrating a method for manufacturing a light emitting element according to an embodiment.

[0041] Figure 14 is a cross-sectional view of a light emitting element according to another embodiment.

[0042] Figure 15 is a cross-sectional view of a light emitting element according to still another embodiment.

[0043] Figure 16 is a cross-sectional view of a light emitting element according to still another embodiment.

[0044] Figure 17 yes Figure 16 An enlarged view of portion Q2.

[0045] Figure 18 is a schematic diagram of a light emitting element according to yet another embodiment.

[0046] Figure 19 is a schematic plan view of a display device according to an embodiment.

[0047] Figure 20 is a schematic plan view of one pixel of a display device according to one embodiment.

[0048] Figure 21 is a schematic cross-sectional view of a display device according to an embodiment.

[0049] Figure 22 It is along Figure 20 Cross-sectional views taken along lines Xa-Xa', Xb-Xb' and Xc-Xc'.

[0050] Figure 23 is a cross-sectional view of a display device according to another embodiment.

[0051] Figure 24 is a plan view showing one pixel of a display device according to still another embodiment. DETAILED DESCRIPTION

[0052] The invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art.

[0053] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like reference numerals refer to like components throughout the specification.

[0054] It will be understood that although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first element discussed below may be referred to as the second element without departing from the teachings of the invention. Similarly, the second element may also be referred to as the first element.

[0055] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0056] Figure 1 is a schematic diagram of a light emitting element according to an embodiment. Figure 2 yes Figure 1 Schematic exploded perspective view of a light emitting element. Figure 3 It shows Figure 1 Schematic diagram of a cross section of a light-emitting element.

[0057] The light-emitting element 300 may be a light-emitting diode. Specifically, the light-emitting element 300 may be an inorganic light-emitting diode having micrometer or nanometer dimensions and made of an inorganic material. When an electric field is formed in a specific direction between two electrodes facing each other, the inorganic light-emitting diode can be aligned between the two electrodes having polarity. The light-emitting element 300 can be aligned between the two electrodes by the electric field generated between the electrodes.

[0058] The light emitting element 300 may include a semiconductor layer doped with impurities of any conductive type (eg, p-type or n-type), and may emit light of a specific wavelength band by receiving an electrical signal applied from an external power source.

[0059] The light emitting element 300 according to one embodiment can emit light of a specific wavelength band. In an embodiment, the active layer 330 can emit blue light with a central wavelength band in the range of 450nm to 495nm. However, it should be understood that the central wavelength band of blue light is not limited to the range mentioned above, but includes all wavelength ranges that can be considered blue in the relevant art. In addition, the light emitted from the active layer 330 of the light emitting element 300 may not be limited thereto, and may be green light with a central wavelength band in the range of 495nm to 570nm or red light with a central wavelength band in the range of 620nm to 750nm. Hereinafter, a description will be provided under the assumption that the light emitting element 300 emits, for example, blue light.

[0060] Reference Figures 1 to 3 The light emitting element 300 may include a first semiconductor layer 310 , a second semiconductor layer 320 , an active layer 330 , a first electrode layer 371 , a second electrode layer 372 and an insulating film 380 .

[0061] Figure 1 is a schematic diagram in which a portion of the light emitting element 300 is cut, Figure 2 is an exploded perspective view showing other layers except the insulating film 380 of the light emitting element 300, and Figure 3 is a cross-sectional view taken along one direction along which the light emitting element 300 extends.

[0062] The light-emitting element 300 may be formed such that a plurality of semiconductor layers surround at least a portion of the outer surface of any other layer. The light-emitting element 300 may include a semiconductor core having at least a portion thereof extending in one direction, a plurality of electrode layers disposed at both ends of the semiconductor core, and an insulating film surrounding them. According to one embodiment, in the light-emitting element 300, the active layer 330, the second semiconductor layer 320, the first electrode layer 371, the second electrode layer 372, and the insulating film 380 may be disposed sequentially from the first semiconductor layer 310. The semiconductor core may include the first semiconductor layer 310, the active layer 330, and the second semiconductor layer 320.

[0063] The active layer 330 and the first electrode layer 371 may be provided to partially surround the first semiconductor layer 310. They may be in direct contact with the first semiconductor layer 310 and may be spaced apart from each other. The second semiconductor layer 320 may be in direct contact with and surround the active layer 330, and the second electrode layer 372 may be in direct contact with and surround the second semiconductor layer 320. The insulating film 380 may completely surround the outer surfaces of the first semiconductor layer 310, the first electrode layer 371, and the second electrode layer 372.

[0064] The light emitting element 300 may have a shape in which at least a portion of its area extends in one direction. The light emitting element 300 may have a shape such as a rod, a wire, or a tube. In an embodiment, the light emitting element 300 may have a shape extending in one direction and may have a shape in which its side surface is partially inclined. That is, the light emitting element 300 according to one embodiment may partially have a conical shape.

[0065] According to one embodiment, a light-emitting element 300 may include a main body portion 300A and a first end portion 300B and a second end portion 300C connected to the main body portion 300A. The main body portion 300A, the first end portion 300B, and the second end portion 300C are mentioned to define the light-emitting element 300 or a portion of a semiconductor layer constituting the main body portion 300A, the first end portion 300B, and the second end portion 300C may be integrally formed without being separated from each other to form one light-emitting element 300. That is, the main body portion 300A, the first end portion 300B, and the second end portion 300C may distinguish and indicate a partial region of the light-emitting element 300 or a partial region of the semiconductor layer constituting the main body portion 300A, the first end portion 300B, and the second end portion 300C. The main body portion 300A, the first end portion 300B and the second end portion 300C to be described below do not necessarily indicate a partial region of the light-emitting element 300 including all multiple semiconductor layers, and can be understood as indicating a partial region of the semiconductor core including some components (for example, the first semiconductor layer 310, the active layer 330, the second semiconductor layer 320, etc.).

[0066] The main body portion 300A of the light emitting element 300 may have a shape extending in one direction. In a cross-sectional view, the main body portion 300A extending in one direction may have a flat outer surface. In some embodiments, the main body portion 300A may have a cylindrical shape, a rod shape, or a polygonal prism shape, but is not limited thereto.

[0067] The first end portion 300B of the light-emitting element 300 may be a region connected to one side of the main body portion 300A, and the second electrode layer 372, which will be described later, is located in this region. Unlike the main body portion 300A, the first end portion 300B may have an inclined outer surface. The inclined outer surface of the first end portion 300B may meet one end of the light-emitting element 300, and the first end portion 300B may have a substantially conical shape.

[0068] In the body portion 300A and the first end portion 300B, the active layer 330 , the second semiconductor layer 320 , the second electrode layer 372 , and the insulating film 380 may be sequentially arranged from the first semiconductor layer 310 disposed at the center. However, the disclosure is not limited thereto.

[0069] The second end portion 300C of the light-emitting element 300 may be a region connected to the other side of the main portion 300A, and the first electrode layer 371, which will be described later, is located in this region. The second end portion 300C may have a shape substantially identical to that of the main portion 300A, and may also have a shape extending at a different diameter. According to one embodiment, in the light-emitting element 300, the diameter 300WA of the main portion 300A may be larger than the diameter 300WC of the second end portion 300C. That is, the second end portion 300C may have a shape in which its outer surface is recessed from the outer surface of the main portion 300A toward the center. Unlike the main portion 300A of the light-emitting element 300, only the first semiconductor layer 310, the first electrode layer 371, and the insulating film 380 may be provided at the second end portion 300C. That is, the layers arranged sequentially from the first semiconductor layer 310 toward the outer surface of the light-emitting element 300 may be different in the main portion 300A and the second end portion 300C. Therefore, the diameter 300WA of the main body portion 300A may be larger than the diameter 300WC of the second end portion 300C. In addition, as will be described later, the portion of the first semiconductor layer 310 corresponding to the main body portion 300A may have a larger diameter than the portion corresponding to the second end portion 300C. This may be a structure formed when the first semiconductor layer 310 is grown during the manufacturing process of the light emitting element 300.

[0070] However, the shape of the light emitting element 300 is not limited thereto, and the light emitting element 300 may have various shapes such as a cylindrical shape, a rod shape, and a polygonal prism shape, for example, a regular cube, a rectangular parallelepiped, and a hexagonal prism, etc. The plurality of semiconductor layers may have a structure in which they are sequentially arranged or stacked in one direction.

[0071] Specifically, among the multiple layers of the light emitting element 300, the first semiconductor layer 310 may be, for example, an n-type semiconductor having a first conductivity type. For example, when the light emitting element 300 emits light in the blue wavelength band, the first semiconductor layer 310 may include a semiconductor having a chemical formula of Al x Ga y In 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) semiconductor material. For example, the first semiconductor layer 310 may be any one or more of n-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The first semiconductor layer 310 may be doped with a first conductive dopant. For example, the first conductive dopant may be Si, Ge, Sn, etc. In an embodiment, the first semiconductor layer 310 may be n-GaN doped with n-type Si. The length of the first semiconductor layer 310 may have a range of 1.5 μm to 5 μm, but is not limited thereto.

[0072] According to one embodiment, the first semiconductor layer 310 may include a first portion NR1 corresponding to the main portion 300A of the light emitting element 300, a second portion NR2 corresponding to the first end portion 300B, and a third portion NR3 corresponding to the second end portion 300C. Similar to the main portion 300A of the light emitting element 300, the first portion NR1 may have a shape extending in one direction. The first portion NR1 may have a shape substantially the same as that of the main portion 300A, but is not limited thereto. In some embodiments, the main portion 300A may have different diameters depending on the position. This will be described later with reference to another embodiment.

[0073] The second portion NR2 located at one side of the first portion NR1 may have an inclined outer surface. The second portion NR2 may extend to one side of the first portion NR1, and its side surface may be inclined in a cross-sectional view to meet one end of the first semiconductor layer 310. That is, similar to the first end portion 300B, the second portion NR2 may have a conical shape.

[0074] The third portion NR3 may be located on the other side of the first portion NR1. Similar to the first portion NR1, the third portion NR3 may have a shape extending in one direction. According to one embodiment, in the first semiconductor layer 310 of the light-emitting element 300, the diameter of the first portion NR1 may be larger than the diameter of the third portion NR3. As shown in the figure, the third portion NR3 of the first semiconductor layer 310 may have a diameter smaller than that of the first portion NR1 and may have a shape in which its outer surface is recessed from the outer surface of the first portion NR1 toward the center. This structure can be achieved by forming the third portion NR3 and then forming the first portion NR1 by further depositing the material of the first semiconductor layer 310 during the process of forming the first semiconductor layer 310. When forming the first semiconductor layer 310, the first portion NR1 can be formed by further growing semiconductor crystal only in a portion of the semiconductor crystal extending in one direction. In addition, the diameter of the third portion NR3 may decrease from the area adjacent to the first portion NR1 toward the area opposite it. However, the disclosure is not limited to this.

[0075] The second semiconductor layer 320 is provided to cover the first portion NR1 and the second portion NR2 of the first semiconductor layer 310, and includes an active layer 330 to be described later. As a non-limiting example, the second semiconductor layer 320 may be a p-type semiconductor having a second conductivity type. For example, when the light emitting element 300 emits light in the blue band or the green band, the second semiconductor layer 320 may include a semiconductor having a chemical formula of Al x Ga y In 1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1) semiconductor material. For example, it can be any one or more of p-type doped AlGaInN, GaN, AlGaN, InGaN, AlN and InN. The second semiconductor layer 320 can be doped with a second conductive dopant. For example, the second conductive dopant can be Mg, Zn, Ca, Sr, Ba, etc. In an embodiment, the second semiconductor layer 320 can be p-GaN doped with p-type Mg. The thickness of the second semiconductor layer 320 can have a range of 0.05μm to 0.10μm, but is not limited thereto.

[0076] Meanwhile, although the first semiconductor layer 310 and the second semiconductor layer 320 are shown in the figure as being constructed as a single layer, the disclosure is not limited thereto. According to some embodiments, the first semiconductor layer 310 and the second semiconductor layer 320 may further include a larger number of layers, such as a cladding layer or a tensile strain barrier reduction (TSBR) layer, depending on the material of the active layer 330.

[0077] The active layer 330 is disposed between the first semiconductor layer 310 and the second semiconductor layer 320. The active layer 330 may be disposed to surround the first portion NR1 of the first semiconductor layer 310 and may be disposed between the first semiconductor layer 310 and the second semiconductor layer 320 at the main portion 300A of the light-emitting element 300. The active layer 330 may include a quantum layer, as will be described later, to emit light of a specific wavelength band. Here, the wavelength band of the light emitted from the active layer 330 may vary depending on the content of the material contained in the quantum layer. In addition, the content of the material contained in the quantum layer of the active layer 330 may vary depending on the lattice constant of the first semiconductor layer 310 on which the active layer 330 is disposed. The lattice constant of the first semiconductor layer 310 may vary depending on the material of the first semiconductor layer 310 or the diameter or shape of the first semiconductor layer 310.

[0078] The first semiconductor layer 310 may include a first portion NR1 having a flat outer surface in a cross-sectional view, a second portion NR2 having an inclined outer surface in a cross-sectional view, and a third portion NR3 having different diameters. The first portion NR1, the second portion NR2, and the third portion NR3 may have different lattice constants. When the active layer 330 completely surrounds the first semiconductor layer 310, the content of the material contained in the quantum layer varies depending on the location of the active layer 330, thereby emitting light of different wavelengths. In the light-emitting element 300 according to one embodiment, the active layer 330 is provided only in the first portion NR1 of the first semiconductor layer 310, thereby including quantum layers having the same content of material to emit light of a constant wavelength. Since the active layer 330 is provided only in the first portion NR1 extending in one direction of the first semiconductor layer 310, the second portion NR2 of the first semiconductor layer 310 may contact the second semiconductor layer 320. However, the disclosure is not limited thereto; in some embodiments, the active layer 330 may also be provided in the second portion NR2 of the first semiconductor layer 310.

[0079] The active layer 330 may include a material having a single quantum well structure or a multi-quantum well structure. When the active layer 330 includes a material having a multi-quantum well structure, multiple quantum layers and well layers may be stacked alternately. The active layer 330 may emit light by combining electron-hole pairs according to an electrical signal applied through the first semiconductor layer 310 and the second semiconductor layer 320. For example, when the active layer 330 emits light in the blue wavelength band, the active layer 330 may include a material such as AlGaN or AlGaInN. In particular, when the active layer 330 has a structure in which quantum layers and well layers are alternately stacked in a multi-quantum well structure, the quantum layers may include materials such as AlGaN or AlGaInN, and the well layers may include materials such as GaN or AlInN. In an embodiment, as described above, the active layer 330 includes AlGaInN as a quantum layer and AlInN as a well layer, and the active layer 330 may emit blue light having a central wavelength band of 450nm to 495nm.

[0080] However, the disclosure is not limited thereto, and the active layer 330 may have a structure in which semiconductor materials having large band gap energy and semiconductor materials having small band gap energy are alternately stacked, and may include other Group III to Group V semiconductor materials depending on the wavelength band of the emitted light. The light emitted by the active layer 330 is not limited to light in the blue wavelength band, but in some cases, the active layer 330 may also emit light in the red wavelength band or the green wavelength band. The thickness of the active layer 330 may range from 0.05 μm to 0.10 μm, but is not limited thereto.

[0081] Meanwhile, light emitted from the active layer 330 may be emitted from both side surfaces of the light emitting element 300 in addition to the outer surface in the longitudinal direction of the light emitting element 300. The direction of light emitted from the active layer 330 is not limited to one direction.

[0082] The electrode layers 371 and 372 may be ohmic contact electrodes. However, the disclosure is not limited thereto, and the electrode layers 371 and 372 may be Schottky contact electrodes. When the light emitting element 300 is electrically connected to the display device 10 according to one embodiment to be described later (see FIG. Figure 19 ) in the electrode or contact electrode, the electrode layers 371 and 372 can reduce the resistance between the light-emitting element 300 and the electrode or between the light-emitting element 300 and the contact electrode. The electrode layers 371 and 372 may include a conductive metal. For example, the electrode layers 371 and 372 may include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). In addition, the electrode layers 371 and 372 may include n-type or p-type doped semiconductor materials. The electrode layers 371 and 372 may include the same material or different materials, but are not limited thereto.

[0083] The electrode layer 371 and the electrode layer 372 include a first electrode layer 371 and a second electrode layer 372. According to one embodiment, the first electrode layer 371 is provided in at least a portion of the third portion NR3 of the first semiconductor layer 310, and the second electrode layer 372 is provided on the second semiconductor layer 320. The second electrode layer 372 may be provided at the first end portion 300B of the light emitting element 300, and the first electrode layer 371 may be provided at the second end portion 300C of the light emitting element 300.

[0084] The first electrode layer 371 may be in direct contact with the first semiconductor layer 310 and may be disposed to surround a partial region of the third portion NR3. The third portion NR3 of the first semiconductor layer 310 may be surrounded by the first electrode layer 371 except for the bottom surface of the lower end portion and a partial region of the upper end portion adjacent to the first portion NR1 in the figure.

[0085] The second electrode layer 372 may be in direct contact with the second semiconductor layer 320 and may be disposed to surround an outer surface of the second semiconductor layer 320 corresponding to the main portion 300A and the first end portion 300B of the light emitting element 300. That is, the second electrode layer 372 may have substantially the same shape as the second semiconductor layer 320.

[0086] The light-emitting element 300 can receive an electrical signal through the first electrode layer 371 and the second electrode layer 372 to emit light of a specific wavelength band from the active layer 330. The first electrode layer 371 and the second electrode layer 372 can be spaced apart from each other to transmit the electrical signal to the active layer 330 through the first electrode layer 371 and the first semiconductor layer 310. According to one embodiment, the first electrode layer 371 and the second electrode layer 372 can be spaced apart from each other in a direction along which the light-emitting element 300 extends between the first portion NR1 and the third portion NR3 of the first semiconductor layer 310.

[0087] like Figure 3 As shown in the portion Q1 of , the first electrode layer 371 may be provided only at the third portion NR3 of the first semiconductor layer 310, and may not be provided at the first portion NR1. The second electrode layer 372 may be provided on the second semiconductor layer 320 only in regions corresponding to the first portion NR1 and the second portion NR2 of the first semiconductor layer 310. As described above, in the first semiconductor layer 310, the diameter of the first portion NR1 may be greater than the diameter of the third portion NR3. Therefore, in the light emitting element 300, the diameter 300WA of the main portion 300A may be greater than the diameter 300WC of the second end portion 300C. The third portion NR3 of the first semiconductor layer 310 may have a shape in which its outer surface is recessed from the outer surface of the first portion NR1 toward the center. As shown from Figure 3 As can be seen from the portion Q1, materials of the electrode layers 371 and 372 may not be effectively deposited on a portion of the third portion NR3 recessed from the outer surface of the first portion NR1.

[0088] In the light-emitting element 300 according to one embodiment, the first electrode layer 371 and the second electrode layer 372 can be formed in a single process and can be spaced apart from each other between the first portion NR1 and the third portion NR3 of the first semiconductor layer 310. The electrode layer may not be formed in an area of ​​the third portion NR3 where material is not effectively deposited. The third portion NR3 has a width smaller than that of the first portion NR1. That is, the electrode layer may not be formed above the third portion NR3 in the figure, and the first electrode layer 371 may be positioned adjacent to the lower end of the third portion NR3 spaced apart from the first portion NR1. The shapes of the first and second electrode layers 371 and 372 may be structures formed by not depositing material on the upper portion of the third portion NR3 because the upper portion of the third portion NR3 is covered by the first portion NR1. A detailed description will be provided later.

[0089] The insulating film 380 is arranged to surround the outer surfaces of the above-mentioned multiple semiconductor layers and electrode layers. In an embodiment, the insulating film 380 can be arranged to surround at least the outer surface of the active layer 330 and extend along the extension direction of the light-emitting element 300. The insulating film 380 can play the role of a protective member. For example, the insulating film 380 can be formed to surround the side surface of the member, and one end of the light-emitting element 300 in the longitudinal direction (i.e., the bottom surface of the first semiconductor layer 310) can be exposed. The insulating film 380 can be formed to surround the first semiconductor layer 310 exposed because the first electrode layer 371 and the second electrode layer 372 are spaced apart from each other, including the outer surfaces of the first electrode layer 371 and the second electrode layer 372.

[0090] In the figure, although the insulating film 380 is shown as extending in the longitudinal direction of the light-emitting element 300 to cover the side surfaces ranging from the first electrode layer 371 to the second electrode layer 372, the disclosure is not limited to this. The insulating film 380 may cover only a portion of the outer surface of the semiconductor layer, including the active layer 330, or may cover only a portion of the outer surface of the first electrode layer 371 and the second electrode layer 372, so that the outer surface of each of the electrode layers 371 and 372 is partially exposed. However, here, since the insulating film 380 is formed to surround the first electrode layer 371 and the second electrode layer 372 after forming the first electrode layer 371 and the second electrode layer 372 in the manufacturing process of the light-emitting element 300 to be described later, the insulating film 380 according to one embodiment can be provided to surround the outer surface of the first electrode layer 371 and the second electrode layer 372 of the light-emitting element 300.

[0091] The thickness of the insulating film 380 may be in the range of 10 nm to 1.0 μm, but is not limited thereto. Preferably, the thickness of the insulating film 380 may be around 40 nm.

[0092] The insulating film 380 may include a material having insulating properties, for example, silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum nitride (AlN), aluminum oxide (Al2O3), etc. Therefore, it is possible to prevent an electrical short circuit that may occur when the active layer 330 directly contacts an electrode through which an electrical signal is transmitted to the light-emitting element 300. In addition, since the insulating film 380 protects the outer surface of the light-emitting element 300 including the active layer 330, it is possible to prevent a decrease in light-emitting efficiency.

[0093] Furthermore, in some embodiments, the insulating film 380 may have a surface-treated outer surface. When manufacturing the display device 10, the light-emitting elements 300 can be aligned by spraying them onto the electrodes while dispersed in a predetermined ink. The surface of the insulating film 380 may be treated to be hydrophobic or hydrophilic to maintain the light-emitting elements 300 in a dispersed state and prevent them from agglomerating with other adjacent light-emitting elements 300 in the ink.

[0094] The light-emitting element 300 may have a length of 1 μm to 10 μm or 2 μm to 6 μm, and preferably 3 μm to 5 μm. In addition, the diameter of the light-emitting element 300 may range from 300 nm to 700 nm, and the aspect ratio of the light-emitting element 300 may be 1.2 to 100. However, the disclosure is not limited thereto, and the plurality of light-emitting elements 300 included in the display device 10 may have different diameters depending on the composition of the active layer 330. Preferably, the diameter of the light-emitting element 300 may be about 500 nm.

[0095] The light-emitting element 300 can be manufactured using an epitaxial growth method for forming a semiconductor layer by growing semiconductor crystals. The light-emitting element 300 can be manufactured by sequentially forming a first semiconductor layer 310, an active layer 330, and a second semiconductor layer 320 on a lower substrate, and then forming a first electrode layer 371, a second electrode layer 372, and an insulating film 380. The light-emitting element 300 may include a second electrode layer 372 disposed on the second semiconductor layer 320 on the second portion NR2 and a first electrode layer 371 disposed on the third portion NR3.

[0096] According to one embodiment, the first semiconductor layer 310 may include a first portion NR1 and a third portion NR3 having a width smaller than that of the first portion NR1, and the first electrode layer 371 and the second electrode layer 372 may be formed in a single process to be spaced apart from each other. In the process of forming the electrode layers 371 and 372, the material of the electrode layers 371 and 372 deposited on the second semiconductor layer 320 may not be deposited below the lower portion of the first portion NR1 of the first semiconductor layer 310. The material of the electrode layers 371 and 372 may be formed at the lower portion of the third portion NR3 without being deposited on the region where the first portion NR1 and the third portion NR3 are connected. Therefore, the first electrode layer 371 and the second electrode layer 372 spaced apart from each other may be formed in a single deposition process.

[0097] Hereinafter, a method of manufacturing the light emitting element 300 according to one embodiment will be described.

[0098] Figures 4 to 13 Schematic diagram illustrating a method for manufacturing a light emitting element according to an embodiment.

[0099] The method for manufacturing the light-emitting element 300 may include: forming a first semiconductor layer 310, an active layer 330, and a second semiconductor layer 320; forming a first electrode layer 371 disposed on a portion of the first semiconductor layer 310 and a second electrode layer 372 disposed on the second semiconductor layer 320; and forming an insulating film 380 surrounding the first electrode layer 371, the first semiconductor layer 310, and the second electrode layer 372. In the method for manufacturing the light-emitting element 300 according to one embodiment, even if the first electrode layer 371 and the second electrode layer 372 are formed in a single process, they may be formed spaced apart from each other on the first semiconductor layer 310.

[0100] Reference Figures 4 to 13 , a method for manufacturing the light emitting element 300 according to an embodiment will be described in detail. First, as Figure 4 As shown in , a lower substrate 2000 including a base substrate 2100 and a buffer material layer 2200 formed on the base substrate 2100 , and a sub-semiconductor layer 3100 formed on the buffer material layer 2200 are prepared.

[0101] The base substrate 2100 may include a transparent substrate such as a sapphire (Al2O3) substrate and a glass substrate. However, the disclosure is not limited thereto, and the base substrate 2100 may be formed of a conductive substrate such as GaN, SiC, ZnO, Si, GaP, and GaAs. The following description relates to the case where the base substrate 2100 is a sapphire (Al2O3) substrate. Although not limited thereto, the base substrate 2100 may have a thickness in the range of, for example, 400 μm to 1500 μm.

[0102] A plurality of semiconductor layers may be formed on the base substrate 2100. The plurality of semiconductor layers grown by epitaxial method may be formed by growing seed crystals. Here, the semiconductor layers may be formed using one of electron beam deposition, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporation, sputtering, and metal organic chemical vapor deposition (MOCVD). Preferably, the semiconductor layers are formed using metal organic chemical vapor deposition (MOCVD). However, the disclosure is not limited thereto.

[0103] Typically, a precursor material for forming a plurality of semiconductor layers can be selected to form a target material within a generally selectable range without any limitation. For example, the precursor material can be a metal precursor comprising an alkyl group (such as a methyl or ethyl group). Examples of precursor materials can include, but are not limited to, trimethylgallium Ga(CH3)3, trimethylaluminum Al(CH3)3, and triethyl phosphate (C2H5)3PO4. Hereinafter, the description of the method and process conditions for forming a plurality of semiconductor layers is omitted, and the process sequence of the manufacturing method of the light-emitting element 300 and the layered structure of the light-emitting element 300 are described in detail.

[0104] A buffer material layer 2200 is formed on the base substrate 2100. Although the figure shows that one buffer material layer 2200 is deposited, the disclosure is not limited thereto, and multiple layers may be formed. The buffer material layer 2200 may be provided to reduce the difference in lattice constant between the first semiconductor layer 310 and the base substrate 2100.

[0105] For example, the buffer material layer 2200 may include an undoped semiconductor and may include a material substantially the same as the first semiconductor layer 310 and not n-type doped or p-type doped. In an embodiment, the buffer material layer 2200 may be, but is not limited to, at least one of undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN. The buffer material layer 2200 may also be omitted depending on the base substrate 2100. The following description will be given with respect to an example in which the buffer material layer 2200 including an undoped semiconductor is formed on the base substrate 2100.

[0106] A sub-semiconductor layer 3100 may be formed on the buffer material layer 2200. The sub-semiconductor layer 3100 may include the same material as the first semiconductor layer 310. For example, the sub-semiconductor layer 3100 may include an n-type semiconductor layer. The sub-semiconductor layer 3100 may provide a seed crystal for the first semiconductor layer 310 formed by an epitaxial growth method.

[0107] Next, refer to Figure 5 and Figure 6 , a plurality of mask layers 1600 are formed on the sub-semiconductor layer 3100 , and etching holes are formed that penetrate the mask layers 1600 and expose at least a portion of the sub-semiconductor layer 3100 .

[0108] The mask layer 1600 may provide a space in which the first semiconductor layer 310 grows. An etching hole exposing a portion of the sub-semiconductor layer 3100 may be formed in the mask layer 1600, and crystals of the sub-semiconductor layer 3100 that have grown through the etching hole may form the first semiconductor layer 310. In one embodiment, the mask layer 1600 may include a first mask layer 1610, a second mask layer 1620, and a third mask layer 1630. The first mask layer 1610 may be formed on the sub-semiconductor layer 3100, and the second mask layer 1620 and the third mask layer 1630 may be sequentially formed on the first mask layer 1610.

[0109] The portion where the sub-semiconductor layer 3100 has been grown through the first mask layer 1610 and the second mask layer 1620 may be the third portion NR3 of the first semiconductor layer 310. The shape of the third portion NR3 may be substantially the same as the shape of the etching hole formed in the first mask layer 1610 and the second mask layer 1620. As will be described later, the etching hole formed in the first mask layer 1610 and the second mask layer 1620 may have a small width. Therefore, the first semiconductor layer 310 may have a shape in which the third portion NR3 having a width smaller than that of the first portion NR1 extends in one direction.

[0110] In addition, in some embodiments, the first mask layer 1610 and the second mask layer 1620 may be formed to have a predetermined thickness to allow the third portion NR3 of the first semiconductor layer 310 to have a specific length. The first mask layer 1610 may be thicker than the second mask layer 1620, and the total thickness of the first mask layer 1610 and the second mask layer 1620 may be 300 nm or greater. However, the disclosure is not limited thereto.

[0111] The portion where the sub-semiconductor layer 3100 has been grown through the third mask layer 1630 may be the first portion NR1 and the second portion NR2 of the first semiconductor layer 310. However, the first portion NR1 and the second portion NR2 of the first semiconductor layer 310 may be formed by further depositing a material of the first semiconductor layer 310 in a subsequent process and may have a shape different from the shape of the etching hole formed in the third mask layer 1630. Therefore, the diameter of the third portion NR3 of the first semiconductor layer 310 may be different from the diameters of the first portion NR1 and the second portion NR2.

[0112] The materials of the first mask layer 1610, the second mask layer 1620, and the third mask layer 1630 are not particularly limited. In some embodiments, the first mask layer 1610, the second mask layer 1620, and the third mask layer 1630 may include silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiOx N y For example, the first mask layer 1610 and the third mask layer 1630 may include silicon oxide (SiO x ), and the second mask layer 1620 may include silicon nitride (SiN x ). However, the disclosure is not limited thereto.

[0113] The etching holes may penetrate the third mask layer 1630, the second mask layer 1620, and the first mask layer 1610 to expose at least a partial region of the sub-semiconductor layer 3100. The first semiconductor layer 310 may be formed by crystal growth of the sub-semiconductor layer 3100 through the etching holes.

[0114] A plurality of etch holes spaced apart from each other may be formed in the mask layer 1600. The spacing and diameter of the etch holes are not particularly limited. The diameter of the portion of the sub-semiconductor layer 3100 exposed by the etch holes may be smaller than the spacing between the etch holes. In some embodiments, the ratio of the diameter of the portion of the sub-semiconductor layer 3100 exposed by the etch holes to the spacing between the etch holes may be 1:2.5 to 1:3.

[0115] At the same time, in an embodiment, the inner sidewall of the mask layer 1600 exposed by the etching hole can be formed to be inclined from the top surface of the sub-semiconductor layer 3100. That is, the diameter of the etching hole can decrease from the third mask layer 1630 toward the first mask layer 1610. Therefore, the outer surface of the first semiconductor layer 310 formed along the etching hole can be formed to be inclined. In addition, in the first semiconductor layer 310, the diameter of the first portion NR1 and the second portion NR2 can be larger than the diameter of the third portion NR3, and the electrode layers 371 and 372 formed in the subsequent process can be formed only in a portion of the first semiconductor layer 310. Since the third portion NR3 and the first portion NR1 of the first semiconductor layer 310 have different diameters, the material of the electrode layers 371 and 372 can not be deposited on the area where the third portion NR3 and the first portion NR1 are connected, and the first electrode layer 371 and the second electrode layer 372 can be spaced apart from each other. A description will be given later.

[0116] The process for forming the etched hole is not particularly limited and can be performed by a conventional process. For example, the process for forming the etched hole can be dry etching, wet etching, reactive ion etching (RIE), inductively coupled plasma reactive ion etching (ICP-RIE), etc. Dry etching can be suitable for vertical etching because it can achieve anisotropic etching. When using the above-mentioned etching technology, Cl2 or O2 can be used as an etchant. However, the disclosure is not limited thereto.

[0117] In some embodiments, the process of forming the etched hole can be performed by combining dry etching and wet etching. For example, it is possible to perform etching in the depth direction with dry etching and then perform anisotropic etching with wet etching so that the etched sidewalls are placed on a plane perpendicular to the surface.

[0118] Next, refer to Figure 7 and Figure 8 , forming a first semiconductor layer 310 that has grown from the sub-semiconductor layer 3100 along the etched hole. The process of forming the first semiconductor layer 310 includes forming a first sub-semiconductor layer 310' by growing semiconductor crystals of the sub-semiconductor layer 3100 and forming the first semiconductor layer 310 by removing the third mask layer 1630 and depositing a semiconductor material on the first sub-semiconductor layer 310'. The process of removing the third mask layer 1630 can be performed by a conventional process. For example, the above process can be reactive ion etching (RIE), inductively coupled plasma reactive ion etching (ICP-RIE), etc., but is not limited thereto. A detailed description thereof will be omitted.

[0119] First, if Figure 7 As shown in , the first sub-semiconductor layer 310' is formed by growing the semiconductor crystal of the sub-semiconductor layer 3100 along the etching hole of the mask layer 1600. The first sub-semiconductor layer 310' may have a shape in which its side surface is inclined to correspond to the shape of the etching hole. That is, the width may increase from the lower end portion where the first mask layer 1610 is located toward the upper end portion where the third mask layer 1630 is located. However, the end portion in the growth direction of the semiconductor crystal (i.e., the region of the first semiconductor layer 310 where the second portion NR2 is formed) may have a conical shape as its width decreases.

[0120] Next, if Figure 8 , the first semiconductor layer 310 is formed by removing the third mask layer 1630 and further depositing the material of the first semiconductor layer 310. The material of the first semiconductor layer 310 may be deposited only on the region exposed by removing the third mask layer 1630, and may not be deposited on the region surrounded by the first mask layer 1610 and the second mask layer 1620. Therefore, the first semiconductor layer 310 may include a third portion NR3 having a relatively small width and first and second portions NR1 and NR2 having large widths.

[0121] Next, refer to Figure 9, an active layer 330 and a second semiconductor layer 320 are formed on the exposed first portion NR1 and the exposed second portion NR2 of the first semiconductor layer 310. The active layer 330 may be formed to surround the first portion NR1 of the first semiconductor layer 310, and the second semiconductor layer 320 may be formed to completely surround the exposed outer surface of the first semiconductor layer 310, including the active layer 330. Since the third portion NR3 of the first semiconductor layer 310 is surrounded by the first mask layer 1610 and the second mask layer 1620 and is not exposed, the active layer 330 and the second semiconductor layer 320 may not be formed in the third portion NR3. The shape of the third portion NR3 is the same as the above-described shape.

[0122] Next, refer to Figure 10 , the first mask layer 1610 and the second mask layer 1620 are removed to expose the third portion NR3 of the first semiconductor layer 310. The process of removing the first mask layer 1610 and the second mask layer 1620 may be performed by the conventional process as described above.

[0123] Next, refer to Figure 11 The semiconductor crystal 3000 is formed by forming a first electrode layer 371 on a portion of the first semiconductor layer 310 and forming a second electrode layer 372 on the second semiconductor layer 320. The semiconductor crystal 3000 may be formed in Figure 1 The structure is formed on the sub-semiconductor layer 3100 in a state where the first electrode layer 371, the second electrode layer 372, and a portion of the first semiconductor layer 310 are exposed before the insulating film 380 in the light-emitting element 300. The process of forming the first electrode layer 371 and the second electrode layer 372 can be performed by a conventional process of depositing the material of the electrode layer. However, the disclosure is not limited thereto, and a detailed description thereof will be omitted.

[0124] The second electrode layer 372 may be formed on the second semiconductor layer 320 and may be disposed to substantially surround the outer surface of the second semiconductor layer 320. When a process of depositing a material of an electrode layer on the sub-semiconductor layer 3100 is performed, the second electrode layer 372 may be formed on the exposed outer surface of the second semiconductor layer 320 (i.e., the outer surface of the second semiconductor layer 320 formed on the first portion NR1 and the second portion NR2 of the first semiconductor layer 310).

[0125] However, as described above, the third portion NR3 of the first semiconductor layer 310 may have a shape extending with a width smaller than that of the first portion NR1, and may have a shape in which the outer surface of the third portion NR3 has a shape recessed from the first portion NR1 toward the center. Here, when the material of the electrode layer is deposited on the sub-semiconductor layer 3100, the material may not be deposited on the upper portion of the third portion NR3 (i.e., the portion connected to the first portion NR1). The region of the third portion NR3 of the first semiconductor layer 310 adjacent to the first portion NR1 is recessed from the outer surface of the first portion NR1 toward the center and is therefore covered by the outer surface, and the material of the electrode layer may not be deposited on the above region.

[0126] According to one embodiment, in the manufacturing process of the light-emitting element 300, the first electrode layer 371 and the second electrode layer 372 can be formed simultaneously in a single process and can be formed to be spaced apart from each other. The first semiconductor layer 310 includes a third portion NR3 that has been grown through an etching hole of the first mask layer 1610 and the second mask layer 1620 having a predetermined thickness and extends with a small width. The upper portion of the third portion NR3 may be covered by the first portion NR1 having a large width, and the material of the electrode layer may not be effectively deposited on the upper portion of the third portion NR3.

[0127] As from Figure 11 As can be seen from the portion Q, the material of the electrode layer may not be deposited on the region of the third portion NR3 adjacent to the first portion NR1. Some of the material may be deposited on the outer surface of the second semiconductor layer 320 to form a second electrode layer 372. In addition, other materials may be deposited on the lower end portion of the third portion NR3 of the first semiconductor layer 310 and on the sub-semiconductor layers 3100 spaced apart from each other in the first semiconductor layer 310. The material deposited on the lower end portion of the third portion NR3 of the first semiconductor layer 310 may form a first electrode layer 371. The first electrode layer 371 and the second electrode layer 372 may be deposited on the outer surface of the second semiconductor layer 320. Figure 11 The first and second electrode layers 371 and 372 may be spaced apart from each other at a portion Q of the third portion NR3 (i.e., in a partial region of the third portion NR3 connected to the first portion NR1). The material of the electrode layer may be deposited in a direction parallel to one direction in which the light emitting element 300 extends or one direction in which the first semiconductor layer 310 extends, and the first and second electrode layers 371 and 372 may be spaced apart from each other in the one direction.

[0128] In a method for manufacturing a light-emitting element 300 according to an embodiment, a first electrode layer 371 and a second electrode layer 372 spaced apart from each other may be formed in a single deposition process. In one embodiment, the first electrode layer 371 and the second electrode layer 372 may have the same thickness, but the disclosure is not limited thereto. In some cases, the thickness of the first electrode layer 371 may increase as the distance from the region covered by the first portion NR1 increases. This will be described later with reference to another embodiment.

[0129] Next, refer to Figure 12 , forming an insulating film 380 around the outer surface of the semiconductor crystal 3000 to form a semiconductor rod ROD. The semiconductor rod ROD may indicate a semiconductor crystal that is not separated from the sub-semiconductor layer 3100. Figure 1 The light emitting element 300 is provided.

[0130] The insulating film 380 may be formed to surround the outer surface of the semiconductor crystal 3000. The insulating film 380 may be formed using a method of dipping or coating an insulating material on the outer surface of the semiconductor crystal 3000. For example, the insulating film 380 may be formed using atomic layer deposition (ALD). Unlike the first electrode layer 371 and the second electrode layer 372, the insulating film 380 may be formed in a region where the first portion NR1 and the third portion NR3 of the first semiconductor layer 310 are connected. However, the disclosure is not limited thereto.

[0131] In addition, an insulating film 380 may be formed on the first electrode layer 371 formed on the sub-semiconductor layer 3100. When the semiconductor rod ROD is separated from the sub-semiconductor layer 3100 in a subsequent process, the first electrode layer 371 and the insulating film 380 formed on the sub-semiconductor layer 3100 remain on the sub-semiconductor layer 3100.

[0132] Finally, if Figure 13 As shown in FIG, the light emitting element 300 is manufactured by separating the semiconductor rods ROD that have been grown on the sub-semiconductor layer 3100. The step of separating the semiconductor rods ROD is not particularly limited, and in some embodiments, it can be performed by a physical separation method using ultrasound. A detailed description thereof will be omitted.

[0133] Through the above-described processes, the light-emitting element 300 according to one embodiment can be manufactured. In the method for manufacturing the light-emitting element 300, the first electrode layer 371 and the second electrode layer 372, which are spaced apart from each other, can be formed in a single deposition process. In the process of forming the first semiconductor layer 310, the third portion NR3 is formed along the etched holes formed in the first mask layer 1610 and the second mask layer 1620 having a predetermined thickness. In a subsequent process, the first portion NR1 having a width greater than that of the third portion NR3 is formed, so that the upper portion of the third portion NR3 may have an area covered by the first portion NR1. The material of the electrode layer is not effectively deposited on the above area, and the first electrode layer 371 and the second electrode layer 372, which are spaced apart from each other and have the above area therebetween, can be formed in a single process.

[0134] Hereinafter, light emitting elements 300 according to other embodiments will be described.

[0135] Figure 14 is a cross-sectional view of a light emitting element according to another embodiment.

[0136] Reference Figure 14 According to an embodiment, in the light emitting element 300_1, the diameter of the main body portion 300A may decrease from the first end portion 300B toward the second end portion 300C. That is, in the light emitting element 300_1, the first diameter W1 of the main body portion 300A adjacent to the first end portion 300B may be larger than the second diameter W2 of the main body portion 300A adjacent to the second end portion 300C. Figure 14 The light emitting element 300_1 and Figure 1 The light emitting element 300 is different in that the diameter varies depending on the position of the main body portion 300A. The other arrangements and structures of the first semiconductor layer 310_1, the active layer 330, and the second semiconductor layer 320 are the same as those of FIG. Figure 1 The arrangement and structure of the first semiconductor layer 310, the active layer 330, and the second semiconductor layer 320 are the same. In the following description, redundant description will be omitted while focusing on the differences.

[0137] According to an embodiment, the diameter of the main portion 300A of the light emitting element 300_1 may increase from the area connected to the second end portion 300C toward the area connected to the first end portion 300B. In the manufacturing process of the light emitting element 300_1, the first semiconductor layer 310_1 may be formed by the growth of the material of the sub-semiconductor layer 3100 through the etching hole. An etching hole that penetrates the mask layer 1600 and exposes a partial area of ​​the sub-semiconductor layer 3100 may be formed so that the inner wall of the mask layer 1600 is inclined. The diameter of the first semiconductor layer 310_1 that has grown along the inclined inner wall may increase from the area of ​​the first portion NR1 adjacent to the sub-semiconductor layer 3100 (i.e., the area adjacent to the third portion NR3) toward the second portion NR2. Thereafter, even if the side surface of the first portion NR1 is flattened by depositing the material of the first semiconductor layer 310_1, the first semiconductor layer 310_1 that has grown along the etching hole may have an inclined side surface. Therefore, in Figure 14 In the light emitting element 300_1 , a first diameter W1 of the main body portion 300A may be greater than a second diameter W2 of the main body portion 300A adjacent to the second end portion 300C.

[0138] Figure 15 is a cross-sectional view of a light emitting element according to still another embodiment.

[0139] During the process of forming the first electrode layer 371 during the manufacturing process of the light-emitting element 300, the first electrode layer 371 and the second electrode layer 372 can be formed simultaneously in a single process. The third portion NR3 of the first semiconductor layer 310, on which the first electrode layer 371 is formed, may have an upper portion covered by the first portion NR1, and the first electrode layer 371 may be formed at the lower end of the third portion NR3 (i.e., the second end portion 300C of the light-emitting element 300). Here, the region of the first electrode layer 371 covered by the first portion NR1 and the region of the first electrode layer 371 away from the first portion NR1 may have different thicknesses.

[0140] Reference Figure 15 In the light-emitting element 300_2 according to the embodiment, the thickness of the first electrode layer 371_2 may not be constant. In the first electrode layer 371_2 of the light-emitting element 300_2, the first thickness W3, which is the thickness of one side adjacent to the upper portion of the third portion NR3, may be smaller than the second thickness W4, which is the thickness of the other side adjacent to the lower end portion of the third portion NR3. Figure 1 The light emitting element 300 is different in that the thickness of the first electrode layer 371_2 varies depending on the position. In the following description, redundant description will be omitted while focusing on the differences.

[0141] In the formation Figure 15In the process of forming the first electrode layer 371_2 of the light-emitting element 300_2, the material of the electrode layer may not be effectively deposited on the upper portion of the third portion NR3 that is covered by the first portion NR1. On the other hand, as the distance from the first portion NR1 increases, the deposition of material can be performed relatively effectively at the lower end of the third portion NR3. Therefore, when the first electrode layer 371_2 is formed on the third portion NR3 of the first semiconductor layer 310_2, the first electrode layer 371_2 can have different thicknesses depending on the deposition of the material of the electrode layer. The first electrode layer 371_2 can have a side where deposition is not effectively performed and has a small thickness, and another side where deposition is effectively performed and has a large thickness. The first thickness W3 of the one side can be less than the second thickness W4 of the other side.

[0142] Figure 16 is a cross-sectional view of a light emitting element according to still another embodiment. Figure 17 yes Figure 16 An enlarged view of portion Q2.

[0143] Reference Figure 16 and Figure 17 In the light emitting element 300_3 according to the embodiment, the first semiconductor layer 310_3 may include a doping region RP doped with second conductive type impurities in at least a portion of the second portion NR2, and the active layer 330_3 may be further provided between the doping region RP of the first semiconductor layer 310_3 and the second semiconductor layer 320_3. Figure 1 The light emitting element 300 is different in that the first semiconductor layer 310_3 includes a doping region RP, and the active layer 330_3 is further provided on the second portion NR2 of the first semiconductor layer 310_3. In the following description, redundant description will be omitted while focusing on the differences.

[0144] The active layer 330 may be formed on the outer surface of the first semiconductor layer 310, and the content of the semiconductor material contained in the active layer 330 may vary depending on the lattice constant of the first semiconductor layer 310. The active layer 330 formed on the outer surface of the first semiconductor layer 310 having a specific lattice constant may contain a specific content of semiconductor material to emit light in a specific wavelength band. The first portion NR1 of the first semiconductor layer 310, which is flat in a cross-sectional view, may have the same lattice constant, and the active layer 330 formed on the outer surface of the first portion NR1 may contain the same content of semiconductor material to emit light in substantially the same wavelength band. On the other hand, the lattice constant of the second portion NR2 of the first semiconductor layer 310 may vary depending on the position due to its inclined outer surface in a cross-sectional view. When the active layer 330 is formed on the second portion NR2, the content of the semiconductor material may vary depending on the position, and light in different wavelength bands may be emitted.

[0145] On the other hand, Figure 16 and Figure 17 In the light-emitting element 300_3, the doping region RP may be formed in at least a portion of the second portion NR2 of the first semiconductor layer 310_3, for example, in a region facing the second semiconductor layer 320_3. The doping region RP may be a region doped with impurities of a second conductivity type different from the first conductivity type on the first semiconductor layer 310_3 doped with impurities of the first conductivity type. In other words, the doping region RP may be a region doped with impurities of the same conductivity type as the second semiconductor layer 320_3.

[0146] Even if the active layer 330_3 is formed on the second portion NR2 of the first semiconductor layer 310_3, the active layer 330_3 may be disposed between the second semiconductor layer 320_3 and the doping region RP of the first semiconductor layer 310_3. The second semiconductor layer 320_3 and the doping region RP may be doped with impurities of substantially the same conductive type with the active layer 330_3 between the second semiconductor layer 320_3 and the doping region RP, and electrons and holes may not move between the second semiconductor layer 320_3 and the doping region RP. Therefore, even if electrons and holes recombine, the portion of the active layer 330_3 formed on the doping region RP of the first semiconductor layer 310_3 may not generate light, and the portion of the active layer 330_3 formed only on the first portion NR1 may generate light. Figure 16 and Figure 17 In the light emitting element 300_3 , although the active layer 330_3 is disposed to surround the first portion NR1 and the second portion NR2 of the first semiconductor layer 310_3 , only the portion of the active layer 330_3 overlapping the first portion NR1 can generate light of a specific wavelength band.

[0147] Figure 18 is a schematic diagram of a light emitting element according to yet another embodiment.

[0148] Reference Figure 18 In the light emitting element 300' according to the embodiment, the first portion NR1, the second portion NR2, and the third portion NR3 of the first semiconductor layer 310' may have a polygonal prism shape, for example, a hexagonal prism shape. Therefore, the outer surfaces of the active layer 330', the second semiconductor layer 320', the first electrode layer 371', the second electrode layer 372', and the insulating film 380' formed on the first semiconductor layer 310' may have an angled shape corresponding to the shape of the first semiconductor layer 310'. Although the light emitting element 300' is shown in the figure as having a hexagonal prism shape, the disclosure is not limited thereto. The light emitting element 300' according to the embodiment is different in its shape from Figure 1 The light emitting element 300. Due to other features and Figure 1 Other features of the light emitting element 300 are the same, so a detailed description thereof will be omitted.

[0149] At the same time, Figure 1 Unlike the light emitting element 300 of an embodiment, the light emitting element 300 according to one embodiment may include an active layer 330 including a different material to emit light of a color other than blue.

[0150] As mentioned above, in Figure 1 and Figure 2 In the light-emitting element 300 of some embodiments, the active layer 330 may contain nitrogen (N) to emit blue light or green light. On the other hand, in the light-emitting element 300 according to some embodiments, each of the active layer 330 and the other semiconductor layers may be a semiconductor containing at least phosphorus (P). That is, the light-emitting element 300 according to one embodiment may emit red light having a central wavelength band in the range of 620 nm to 750 nm. However, it should be understood that the central wavelength band of red light is not limited to the above-mentioned range and includes all wavelength ranges that can be considered red in the art.

[0151] Specifically, when the light emitting element 300 emits red light, the first semiconductor layer 310 may be an n-type semiconductor layer and may include a semiconductor layer having a chemical formula of In x Al y Ga 1-x-y The first semiconductor layer 310 may be a semiconductor material having a thickness of 0.001 mm / s (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1). For example, the first semiconductor layer 310 may be any one or more of n-type doped InAlGaP, GaP, AlGaP, InGaP, AlP, and InP. The first semiconductor layer 310 may be doped with a first conductive dopant. For example, the first conductive dopant may be Si, Ge, Sn, or the like. In an embodiment, the first semiconductor layer 310 may be n-AlGaInP doped with n-type Si.

[0152] The second semiconductor layer 320 may be a p-type semiconductor layer and may include a layer having a chemical formula of In x Al y Ga 1-x-y The second semiconductor layer 320 may be a semiconductor material having a p-type P (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the second semiconductor layer 320 may be any one or more of p-type doped InAlGaP, GaP, AlGaNP, InGaP, AlP, and InP. The second semiconductor layer 320 may be doped with a second conductive dopant. For example, the second conductive dopant may be Mg, Zn, Ca, Sr, Ba, etc. In an embodiment, the second semiconductor layer 320 may be p-GaP doped with p-type Mg.

[0153] Similar to Figure 1The active layer 330 may include a material having a single quantum well structure or a multiple quantum well structure to emit light in a specific wavelength band. For example, when the active layer 330 emits light in the red wavelength band, the active layer 330 may include materials such as AlGaP, AlInGaP, etc. In particular, when the active layer 330 has a structure in which quantum layers and well layers are alternately stacked in a multiple quantum well structure, the quantum layers may include materials such as AlGaP or AlInGaP, and the well layers may include materials such as GaP or AlInP. In an embodiment, the active layer 330 may include AlGaInP as a quantum layer and AlInP as a well layer to emit red light with a central wavelength band of 620nm to 750nm. In the light emitting element 300 according to one embodiment, the first semiconductor layer 310, the second semiconductor layer 320, and the active layer 330 may include different materials to emit light in different wavelength bands.

[0154] Meanwhile, in some embodiments, the light-emitting elements 300 emitting light of different wavelengths may have different diameters. The active layer 330 emitting light of different wavelengths may be formed on the first semiconductor layer 310 having different lattice constants. The lattice constant of the first semiconductor layer 310 may vary depending on the diameter of the first portion NR1, and the size of the light-emitting element 300 may vary depending on the diameter of the first semiconductor layer 310. A detailed description thereof will be given later.

[0155] Meanwhile, according to one embodiment, the display device 10 may include the above-mentioned light emitting element 300 to display light of a specific wavelength band. In some embodiments, the display device 10 may include Figure 1 The light emitting element 300 may include a light emitting element 300 that displays blue light or green light, or may include a light emitting element 300 that displays blue light or green light. Figure 18 The light emitting element 300' displays red light.

[0156] Figure 19 is a schematic plan view of a display device according to an embodiment.

[0157] Reference Figure 19 The display device 10 displays a moving image or a still image. The display device 10 may refer to any electronic device that provides a display screen. Examples of the display device 10 may include a television that provides a display screen, a laptop computer, a monitor, a billboard, an IoT device, a mobile phone, a smartphone, a tablet personal computer (PC), an electronic watch, a smartwatch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, a game console, a digital camera, a video camera, and the like.

[0158] The display device 10 includes a display panel that provides a display screen. Examples of display panels include LED display panels, organic light-emitting display panels, quantum dot light-emitting display panels, plasma display panels, and field emission display panels. In the following description, an LED display panel is used as the display panel, but the present disclosure is not limited thereto, and other display panels can be applied within the same scope of the technical spirit.

[0159] The shape of the display device 10 can be variously modified. For example, the display device 10 can have a shape such as a horizontally elongated rectangular shape, a vertically elongated rectangular shape, a square shape, a quadrilateral shape with rounded corners (vertices), another polygonal shape, and a circular shape. The shape of the display area DA of the display device 10 can also be similar to the overall shape of the display device 10. Figure 19 , the display device 10 and the display area DA having a rectangular shape elongated in the horizontal direction are shown.

[0160] The display device 10 may include a display area DA and a non-display area NDA. The display area DA is an area where a screen can be displayed, while the non-display area NDA is an area where the screen is not displayed. The display area DA may also be referred to as an active area, and the non-display area NDA may also be referred to as a non-active area.

[0161] The display area DA may substantially occupy the center of the display device 10. The display area DA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in a matrix. The shape of each pixel PX may be rectangular or square in plan view. However, the disclosure is not limited thereto, and the shape of each pixel PX may be a diamond shape in which each side is inclined relative to the first direction DR1. Each pixel PX may include one or more light-emitting elements 300 that emit light in a specific wavelength band to display a specific color.

[0162] Figure 20 is a schematic plan view of one pixel of a display device according to one embodiment.

[0163] Reference Figure 20 , each of the pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit light of a first color, the second sub-pixel PX2 may emit light of a second color, and the third sub-pixel PX3 may emit light of a third color. The first color may be blue, the second color may be green, and the third color may be red, but they are not limited thereto. All sub-pixels PXn may emit light of the same color. In addition, although Figure 20 It is shown that the pixel PX includes three sub-pixels PXn, but the disclosure is not limited thereto, and the pixel PX may include a greater number of sub-pixels PXn.

[0164] Meanwhile, although "first," "second," and the like are used to refer to individual components in the disclosure, they are used to simply distinguish between components and do not necessarily refer to the components. That is, components defined as "first," "second," and the like are not necessarily limited to a specific structure or position, and in some cases, other reference numerals may be assigned. Therefore, the reference numerals assigned to individual components may be interpreted through the figures and the following description, and within the technical spirit of the disclosure, the first component mentioned below may be the second component.

[0165] Each subpixel PXn of the display device 10 may include an area defined as an emission area EMA. The first subpixel PX1 may include a first emission area EMA1, the second subpixel PX2 may include a second emission area EMA2, and the third subpixel PX3 may include a third emission area EMA3. The emission area EMA may be defined as an area where the light-emitting element 300 included in the display device 10 is configured to emit light of a specific wavelength band. The light-emitting element 300 includes an active layer 330, and the active layer 330 may emit light of a specific wavelength band without directionality. That is, light emitted from the active layer 330 of the light-emitting element 300 may radiate in a lateral direction of the light-emitting element 300 and in directions at both ends of the light-emitting element 300. The emission area EMA of each subpixel PXn may include an area adjacent to the light-emitting element 300 that radiates light emitted from the light-emitting element 300, including an area where the light-emitting element 300 is disposed. Furthermore, without limitation thereto, the emission area EMA may also include an area where light emitted from the light-emitting element 300 is reflected or refracted by another member and emitted. A plurality of light emitting elements 300 may be provided in each sub-pixel PXn, and an emission area EMA may be formed to include a region where the light emitting element 300 is provided and a region adjacent thereto.

[0166] Although not shown in the figure, each sub-pixel PXn of the display device 10 may include a non-emission region defined as a region other than the emission region EMA. The non-emission region may be defined as a region in which the light emitting element 300 is not provided and a region from which light is not emitted because light emitted from the light emitting element 300 does not reach the region.

[0167] Each sub-pixel PXn of the display device 10 may include a plurality of electrodes 210 and 220, a light emitting element 300, a plurality of banks 410, 420, and 430 (see FIG. Figure 20 and Figure 22 ) and at least one insulating layer 510, 520 or 550 (see Figure 22 ).

[0168] The electrodes 210 and 220 may be electrically connected to the light emitting element 300 and may receive a preset voltage applied thereto to allow the light emitting element 300 to emit light of a specific wavelength band. In addition, at least a portion of each of the electrodes 210 and 220 may be used to form an electric field within the sub-pixel PXn to align the light emitting element 300.

[0169] The plurality of electrodes 210 and 220 may include a first electrode 210 and a second electrode 220. In an embodiment, the first electrode 210 may be a pixel electrode separated for each sub-pixel PXn, and the second electrode 220 may be a common electrode connected along the respective sub-pixels PXn so as to be shared by them. One of the first electrode 210 and the second electrode 220 may be an anode electrode of the light-emitting element 300, and the other of the first electrode 210 and the second electrode 220 may be a cathode electrode of the light-emitting element 300. However, the disclosure is not limited thereto, and the opposite case may also be possible.

[0170] The first and second electrodes 210 and 220 may include respective electrode stems 210S and 220S arranged to extend in a first direction DR1 and at least one respective electrode branch 210B and 220B extending from the respective electrode stems 210S and 220S in a second direction DR2 crossing the first direction DR1 .

[0171] The first electrode 210 may include a first electrode stem 210S extending in the first direction DR1 and at least one electrode branch 210B branched from the first electrode stem 210S and extending in the second direction DR2 .

[0172] The first electrode stem 210S of any sub-pixel can be arranged so that both ends of the individual first electrode stem 210S terminate in the gap between the respective sub-pixels PXn, and each first electrode stem 210S can be arranged substantially in a straight line with the first electrode stem 210S of the sub-pixel adjacent thereto in the same row (e.g., in the first direction DR1). Since the first electrode stem 210S provided in each sub-pixel PXn is arranged so that both ends thereof are spaced apart from each other, different electrical signals can be applied to the first electrode branches 210B, so that the first electrode branches 210B can be driven individually.

[0173] The first electrode branches 210B may branch from at least a portion of the first electrode stem 210S and extend in the second direction DR2 , and may terminate while being spaced apart from the second electrode stem 220S disposed to face the first electrode stem 210S.

[0174] The second electrode 220 may include a second electrode trunk 220S extending in the first direction DR1 and disposed facing the first electrode trunk 210S while being spaced apart from the first electrode trunk 210S in the second direction DR2; and second electrode branches 220B branching from the second electrode trunk 220S and extending in the second direction DR2. The second electrode trunk 220S may be connected at its other end to the second electrode trunk 220S of another subpixel PXn adjacent to it in the first direction DR1. That is, unlike the first electrode trunk 210S, the second electrode trunk 220S may extend across each subpixel PXn in the first direction DR1. The second electrode trunk 220S extending across each subpixel PXn may be connected to an exterior portion of the display area DA where each pixel PX or subpixel PXn is located, or to an extension extending in one direction from the non-display area NDA.

[0175] The second electrode branches 220B may be disposed facing the first electrode branches 210B with a gap therebetween, and the second electrode branches 220B may terminate while being spaced apart from the first electrode trunk 210S. The second electrode branches 220B may be connected to the second electrode trunk 220S, and ends of the second electrode branches 220B in the extension direction may be disposed within the subpixel PXn while being spaced apart from the first electrode trunk 210S.

[0176] In the figure, two first electrode branches 210B are shown to be arranged in each sub-pixel PXn, and one second electrode branch 220B is arranged between the two first electrode branches 210B. However, the layout of the first electrode branch and the second electrode branch may not be limited to this. In addition, the first electrode 210 and the second electrode 220 do not have to have a shape extending in one direction, and they may have various layouts. For example, the first electrode 210 and the second electrode 220 may have a partially bent or curved shape, and one electrode may be arranged to surround the other electrode. The layout and shape of the first electrode 210 and the second electrode 220 may not be particularly limited, as long as at least some portions thereof face each other and a gap is created between at least some portions thereof to create a space in which the light-emitting element 300 can be arranged.

[0177] In addition, the first electrode 210 and the second electrode 220 may be connected to the circuit element layer PAL (see FIG. 1 ) of the display device 10 through contact holes (eg, the first electrode contact hole CNTD and the second electrode contact hole CNTS). Figure 22) are electrically connected. The figure shows that a first electrode contact hole CNTD is formed at each first electrode trunk 210S of each subpixel PXn, and only one second electrode contact hole CNTS is formed at a single second electrode trunk 220S extending across each subpixel PXn. However, the disclosure is not limited thereto, and if necessary, a second electrode contact hole CNTS may also be formed for each subpixel PXn.

[0178] The plurality of banks 410, 420, and 430 may include an outer bank 430 disposed at the boundary between the sub-pixels PXn and inner banks 410 and 420 disposed below the electrodes 210 and 220 to be adjacent to the center of each sub-pixel PXn. Although the plurality of inner banks 410 and 420 are not shown in the figure, the first inner bank 410 and the second inner bank 420 may be disposed below the first electrode branch 210B and the second electrode branch 220B, respectively. This will be described later with reference to other figures.

[0179] The outer dam 430 may be provided at the boundary between the sub-pixels PXn. The first electrode stem 210S may terminate so that their respective ends are spaced apart from each other, with the outer dam 430 between their respective ends. Each outer dam 430 may extend in the second direction DR2 to be provided at the boundary between adjacent sub-pixels PXn arranged along the first direction DR1. However, the disclosure is not limited thereto, and the outer dam 430 may extend in the first direction DR1 to be provided at the boundary between adjacent sub-pixels PXn arranged along the second direction DR2. The outer dam 430 may include the same material as the inner dams 410 and 420, and these outer dams and inner dams may be formed simultaneously in a single process.

[0180] A plurality of light-emitting elements 300 (e.g., a first light-emitting element 301) may be disposed between the first electrode 210 and the second electrode 220. As shown in the figure, the light-emitting element 300 may be disposed between the first electrode branch 210B and the second electrode branch 220B. At least some of the plurality of light-emitting elements 300 may be electrically connected to the first electrode 210 at one end thereof and electrically connected to the second electrode 220 at the other end thereof. Each light-emitting element 300 may be arranged so that its two ends are respectively located on the first electrode branch 210B and the second electrode branch 220B, but is not limited thereto. In some cases, the light-emitting element 300 may be disposed between the first electrode 210 and the second electrode 220 so as to avoid overlapping of its two ends with the first electrode 210 and the second electrode 220.

[0181] A plurality of light-emitting elements 300 may be arranged substantially parallel to each other between the electrodes 210 and 220 while being spaced apart from each other. The spacing between the light-emitting elements 300 is not particularly limited. In some cases, a plurality of light-emitting elements 300 may be arranged adjacent to each other to form a group, and another plurality of light-emitting elements 300 may be arranged while being spaced apart from each other at regular distances to form another group. That is, the light-emitting elements 300 may be arranged at different densities, but they may still be aligned in one direction. In addition, in an embodiment, the light-emitting element 300 may have a shape extending in one direction, and the extension direction of the electrode (e.g., the first electrode branch 210B and the second electrode branch 220B) may be substantially perpendicular to the extension direction of the light-emitting element 300. However, the disclosure is not limited thereto, and the light-emitting element 300 may be arranged diagonally relative to the extension direction of the first electrode branch 210B and the second electrode branch 220B, without being perpendicular to the extension direction of the first electrode branch 210B and the second electrode branch 220B.

[0182] Meanwhile, the light emitting element 300 according to one embodiment may have an active layer 330 including different materials, and thus may emit light of different wavelength bands to the outside. The display device 10 according to one embodiment may include the light emitting element 300 emitting light of different wavelength bands.

[0183] Figure 21 is a schematic cross-sectional view of a display device according to an embodiment.

[0184] Reference Figure 21 The display device 10 may include a first light emitting element 301 provided in the first sub-pixel PX1 , a second light emitting element 302 provided in the second sub-pixel PX2 , and a third light emitting element 303 provided in the third sub-pixel PX3 .

[0185] The first light emitting element 301, the second light emitting element 302 and the third light emitting element 303 may have Figure 1 The light-emitting elements 300 may have the same structure and may have different diameters. In an embodiment, the diameter WA of the first light-emitting element 301 may be smaller than the diameter WB of the second light-emitting element 302 and the diameter WC of the third light-emitting element 303, and the diameter WB of the second light-emitting element 302 may be smaller than the diameter WC of the third light-emitting element 303. In other words, the diameters of the first light-emitting element 301, the second light-emitting element 302, and the third light-emitting element 303 may increase in order of the first light-emitting element 301, the second light-emitting element 302, and the third light-emitting element 303.

[0186] The first light-emitting element 301 may include an active layer 330 that emits first light L1 having a first wavelength as a central wavelength band, the second light-emitting element 302 may include an active layer 330 that emits second light L2 having a second wavelength as a central wavelength band, and the third light-emitting element 303 may include an active layer 330 that emits third light L3 having a third wavelength as a central wavelength band. The light-emitting element 300 according to one embodiment may emit light of different colors depending on the material included in the active layer 330 disposed on the first portion NR1 of the first semiconductor layer 310. To form the active layer 330 including different materials on the first semiconductor layer 310, the first portion NR1 of the first semiconductor layer 310 may need to have different lattice constants. The active layer 330 including a specific material may be formed on the first semiconductor layer 310 having a specific lattice constant, and the first semiconductor layer 310 may have different lattice constants depending on the diameter of the first portion NR1. In some embodiments, the first light-emitting element 301 including the active layer 330 that emits the first light L1 may have a width smaller than the width of the second light-emitting element 302 including the active layer 330 that emits the second light L2 or the width of the third light-emitting element 303 including the active layer 330 that emits the third light L3. Furthermore, the diameter WB of the second light-emitting element 302 may be smaller than the diameter WC of the third light-emitting element 303.

[0187] Thus, first light L1 can be emitted from the first subpixel PX1, second light L2 can be emitted from the second subpixel PX2, and third light L3 can be emitted from the third subpixel PX3. In some embodiments, the display device 10 may include light-emitting elements including an active layer 330 that emits light of different colors, for example, a first light-emitting element 301, a second light-emitting element 302, and a third light-emitting element 303. The first light-emitting element 301, the second light-emitting element 302, and the third light-emitting element 303 may include an active layer 330 that emits the first light L1, the second light L2, and the third light L3, respectively.

[0188] In some embodiments, the first light L1 may be blue light having a central wavelength of 450 nm to 495 nm, the second light L2 may be green light having a central wavelength of 495 nm to 570 nm, and the third light L3 may be red light having a central wavelength of 620 nm to 750 nm. However, the disclosure is not limited thereto. The first light L1, the second light L2, and the third light L3 may have different colors, or may have the same color, but their central wavelengths may be different from the ranges described above.

[0189] In addition, although not shown in the drawings, the display device 10 may include a first insulating layer 510 covering at least a portion of the first electrode 210 and at least a portion of the second electrode 220 .

[0190] The first insulating layer 510 may be provided in each sub-pixel PXn of the display device 10. The first insulating layer 510 may be provided to substantially completely cover each sub-pixel PXn and may extend to other adjacent sub-pixels PXn. The first insulating layer 510 may be provided to cover at least a portion of the first electrode 210 and at least a portion of the second electrode 220. Although not shown in FIG. Figure 21 , but the first insulating layer 510 may be provided to expose some regions of the first electrode 210 and the second electrode 220 (specifically, some regions of the first electrode branches 210B and the second electrode branches 220B).

[0191] In addition to the first insulating layer 510, the display device 10 may further include a circuit element layer PAL disposed under the electrodes 210 and 220, a second insulating layer 520 disposed to cover at least a portion of the light emitting element 300 (see FIG. 5 ). Figure 22 ) and the passivation layer 550 (see Figure 22 ). Below, we will refer to Figure 22 The structure of the display device 10 will be described in detail.

[0192] Figure 22 It is along Figure 20 Cross-sectional views taken along lines Xa-Xa', Xb-Xb' and Xc-Xc'.

[0193] Figure 22 Only the cross section of the first subpixel PX1 is shown, but the same applies to other pixels PX or subpixels PXn. Figure 22 A cross section across one end and the other end of a light emitting element 300 is shown.

[0194] Reference Figure 20 and Figure 22 The display device 10 may include a circuit element layer PAL and an emission layer EML. The circuit element layer PAL may include a substrate 110, a buffer layer 115, a light blocking layer BML, a first transistor 120, a second transistor 140, and the like. The emission layer EML may include a plurality of electrodes 210 and 220 disposed on the first transistor 120 and the second transistor 140, a light emitting element 300, a plurality of insulating layers 510, 520, and 550, and the like.

[0195] The substrate 110 may be an insulating substrate. The substrate 110 may be made of an insulating material such as glass, quartz, or polymer resin. In addition, the substrate 110 may be a rigid substrate, but may also be a flexible substrate that can be bent, folded, or rolled.

[0196] The light blocking layer BML may be provided on the substrate 110. The light blocking layer BML may include a first light blocking layer BML1 and a second light blocking layer BML2. The first light blocking layer BML1 may be electrically connected to a first drain electrode 123 of a first transistor 120, which will be described later. The second light blocking layer BML2 may be electrically connected to a second drain electrode 143 of a second transistor 140.

[0197] The first light-blocking layer BML1 and the second light-blocking layer BML2 are arranged to overlap the first active material layer 126 of the first transistor 120 and the second active material layer 146 of the second transistor 140, respectively. The first light-blocking layer BML1 and the second light-blocking layer BML2 may include a light-blocking material, thereby preventing light from reaching the first active material layer 126 and the second active material layer 146. For example, the first light-blocking layer BML1 and the second light-blocking layer BML2 may be formed of an opaque metal material that blocks light transmission. However, the present disclosure is not limited thereto, and in some cases, the light-blocking layer BML may be omitted.

[0198] The buffer layer 115 is provided on the light blocking layer BML and the substrate 110. The buffer layer 115 may be provided to cover the entire surface of the substrate 110, including the light blocking layer BML. The buffer layer 115 may prevent the diffusion of impurity ions, prevent the penetration of moisture or external air, and perform a surface planarization function. In addition, the buffer layer 115 may be used to insulate the light blocking layer BML from the first active material layer 126 and the second active material layer 146.

[0199] The semiconductor layer is disposed on the buffer layer 115. The semiconductor layer may include a first active material layer 126 of the first transistor 120, a second active material layer 146 of the second transistor 140, and an auxiliary layer 163. The semiconductor layer may include polysilicon, single crystal silicon, oxide semiconductor, or the like.

[0200] The first active material layer 126 may include a first doping region 126a, a second doping region 126b, and a first channel region 126c. The first channel region 126c may be disposed between the first doping region 126a and the second doping region 126b. The second active material layer 146 may include a third doping region 146a, a fourth doping region 146b, and a second channel region 146c. The second channel region 146c may be disposed between the third doping region 146a and the fourth doping region 146b. The first active material layer 126 and the second active material layer 146 may include polycrystalline silicon. Polycrystalline silicon may be formed by crystallizing amorphous silicon. Examples of crystallization methods may include, but are not limited to, rapid thermal annealing (RTA), solid phase crystallization (SPC), excimer laser annealing (ELA), metal induced lateral crystallization (MILC), and sequential lateral solidification (SLS). As another example, the first active material layer 126 and the second active material layer 146 may include single crystal silicon, low temperature polycrystalline silicon, amorphous silicon, etc. The first doping region 126a, the second doping region 126b, the third doping region 146a, and the fourth doping region 146b may be regions doped with impurities of the first active material layer 126 and the second active material layer 146. However, the disclosure is not limited thereto.

[0201] The first gate insulating film 150 is provided on the semiconductor layer. The first gate insulating film 150 may be provided to cover the entire surface of the buffer layer 115, including the semiconductor layer. The first gate insulating film 150 may serve as a gate insulating film for the first transistor 120 and the second transistor 140.

[0202] A first conductive layer is disposed on the first gate insulating film 150. The first conductive layer may include a first gate electrode 121 disposed on the first active material layer 126 of the first transistor 120, a second gate electrode 141 disposed on the second active material layer 146 of the second transistor 140, and a power supply line 161 disposed on the first gate insulating film 150 on the auxiliary layer 163. The first gate electrode 121 may overlap with the first channel region 126 c of the first active material layer 126, and the second gate electrode 141 may overlap with the second channel region 146 c of the second active material layer 146.

[0203] The interlayer insulating film 170 is provided on the first conductive layer. The interlayer insulating film 170 may function as an insulating film between layers. In addition, the interlayer insulating film 170 may include an organic insulating material and may also perform a surface planarization function.

[0204] The second conductive layer is provided on the interlayer insulating film 170 , and includes the first drain electrode 123 and the first source electrode 124 of the first transistor 120 , the second drain electrode 143 and the second source electrode 144 of the second transistor 140 , and the power electrode 162 provided on the power line 161 .

[0205] The first drain electrode 123 and the first source electrode 124 may respectively contact the first doping region 126 a and the second doping region 126 b of the first active material layer 126 via contact holes formed through the interlayer insulating film 170 and the first gate insulating film 150. The second drain electrode 143 and the second source electrode 144 may respectively contact the third doping region 146 a and the fourth doping region 146 b of the second active material layer 146 via contact holes formed through the interlayer insulating film 170 and the first gate insulating film 150. In addition, the first drain electrode 123 and the second drain electrode 143 may be electrically connected to the first light-blocking layer BML1 and the second light-blocking layer BML2, respectively, via other contact holes.

[0206] The via layer 200 is disposed on the second conductive layer. The via layer 200 includes an organic insulating material and may perform a surface planarization function.

[0207] A plurality of banks 410 , 420 , and 430 , a plurality of electrodes 210 and 220 , and a light emitting element 300 may be disposed on the via layer 200 .

[0208] The plurality of banks 410 , 420 , and 430 may include inner banks 410 and 420 arranged within each sub-pixel PXn while being spaced apart from each other, and an outer bank 430 disposed at a boundary between adjacent sub-pixels PXn.

[0209] The outer bank 430 may prevent the ink from crossing the boundary of the sub-pixel PXn when the inkjet printing device is used to eject ink in which the light emitting elements 300 are dispersed in manufacturing the display device 10. However, the disclosure is not limited thereto.

[0210] The plurality of inner banks 410 and 420 may include a first inner bank 410 and a second inner bank 420 disposed adjacent to the center of each sub-pixel PXn.

[0211] The first inner bank 410 and the second inner bank 420 are disposed to face each other while being spaced apart from each other. The first electrode 210 may be disposed on the first inner bank 410, and the second electrode 220 may be disposed on the second inner bank 420. Figure 20 and Figure 22 It can be understood that the first electrode branch 210B is disposed on the first inner bank 410 , and the second electrode branch 220B is disposed on the second inner bank 420 .

[0212] The first inner bank 410 and the second inner bank 420 may extend in the second direction DR2 within each sub-pixel PXn. Although not shown in the drawings, the first inner bank 410 and the second inner bank 420 may extend in the second direction DR2 toward the sub-pixel PXn adjacent in the second direction DR2. However, the disclosure is not limited thereto, and the first inner bank 410 and the second inner bank 420 may be individually provided in each of the sub-pixels PXn to form a pattern across the entire surface of the display device 10. The plurality of banks 410, 420, and 430 may include polyimide (PI), but are not limited thereto.

[0213] Each of the first inner bank 410 and the second inner bank 420 may have a structure in which at least a portion thereof protrudes above the via layer 200. Each of the first inner bank 410 and the second inner bank 420 may protrude above the plane on which the light emitting element 300 is disposed, and at least a portion of the protruding portion may have an inclination. The shape of the protruding portion of the first inner bank 410 and the second inner bank 420 is not particularly limited.

[0214] A plurality of electrodes 210 and 220 may be respectively disposed on the via layer 200 and the inner banks 410 and 420. As stated above, the electrodes 210 and 220 include electrode trunks 210S and 220S and electrode branches 210B and 220B, respectively. Figure 20 The line Xa-Xa' is a line intersecting the first electrode trunk 210S, Figure 20 The line Xb-Xb' is a line crossing the first electrode branch 210B and the second electrode branch 220B, and Figure 20 The line Xc-Xc' is a line that intersects the second electrode trunk 220S. Figure 22 The first electrode 210 in the region Xa-Xa' can be understood as a first electrode trunk 210S, which is arranged Figure 22 The first electrode 210 and the second electrode 220 in the region Xb-Xb' can be understood as a first electrode branch 210B and a second electrode branch 220B, respectively, and are arranged Figure 22 The second electrode 220 in the region Xc-Xc′ may be understood as a second electrode trunk 220S. The first electrode trunk 210S and the first electrode branches 210B may constitute the first electrode 210 , and the second electrode trunk 220S and the second electrode branches 220B may constitute the second electrode 220 .

[0215] Some regions of the first and second electrodes 210 and 220 may be disposed on the via layer 200, and other regions of the first and second electrodes 210 and 220 may be disposed on the first and second inner banks 410 and 420, respectively. As stated above, the first electrode stem 210S of the first electrode 210 and the second electrode stem 220S of the second electrode 220 may extend in the first direction DR1, and the first and second inner banks 410 and 420 may extend in the second direction DR2 to be disposed in adjacent sub-pixels PXn in the second direction DR2. Although not shown in the figures, the first and second electrode stems 210S and 220S of the first and second electrodes 210 and 220 extending in the first direction DR1 may partially overlap with the first and second inner banks 410 and 420, respectively. However, the disclosure is not limited thereto, and the first and second electrode stems 210S and 220S may not overlap with the first and second inner banks 410 and 420, respectively.

[0216] The first electrode stem 210S of the first electrode 210 may be provided with a first electrode contact hole CNTD formed through the via layer 200 to expose a portion of the first drain electrode 123 of the first transistor 120. The first electrode 210 may be in contact with the first drain electrode 123 through the first electrode contact hole CNTD. The first electrode 210 may be electrically connected to the first drain electrode 123 of the first transistor 120 to receive a preset electrical signal from the first drain electrode 123 of the first transistor 120.

[0217] The second electrode trunk 220S of the second electrode 220 may also extend in one direction so as to be disposed in a non-emission region where the light-emitting element 300 is not disposed. The second electrode trunk 220S may be provided with a second electrode contact hole CNTS formed through the through-hole layer 200 to expose a portion of the power electrode 162. The second electrode 220 may contact the power electrode 162 through the second electrode contact hole CNTS. The second electrode 220 may be electrically connected to the power electrode 162 to receive a predetermined electrical signal from the power electrode 162.

[0218] Some areas of the first electrode 210 and the second electrode 220 (for example, the first electrode branch 210B and the second electrode branch 220B) can be respectively arranged on the first inner bank 410 and the second inner bank 420. The first electrode branch 210B of the first electrode 210 can be arranged to cover the first inner bank 410, and the second electrode branch 220B of the second electrode 220 can be arranged to cover the second inner bank 420. Since the first inner bank 410 and the second inner bank 420 are arranged at the center of each sub-pixel PXn and spaced apart from each other, the first electrode branch 210B and the second electrode branch 220B can also be arranged to be spaced apart from each other. A plurality of light-emitting elements 300 can be arranged in the area between the first electrode 210 and the second electrode 220, that is, the first electrode branch 210B and the second electrode branch 220B are arranged to face each other and the gap is in the space between the first electrode branch 210B and the second electrode branch 220B.

[0219] Each of the electrodes 210 and 220 may include a transparent conductive material. For example, each of the electrodes 210 and 220 may include a material such as indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO), but is not limited thereto. In some embodiments, each of the electrodes 210 and 220 may include a conductive material having a high reflectivity. For example, each of the electrodes 210 and 220 may include a metal such as silver (Ag), copper (Cu), or aluminum (Al) as a material having a high reflectivity. In this case, light incident on each of the electrodes 210 and 220 may be reflected to be radiated in an upward direction of each sub-pixel PXn.

[0220] In addition, each of the electrodes 210 and 220 may have a structure in which at least one transparent conductive material and at least one metal layer having high reflectivity are stacked, or may be formed as a single layer including at least one transparent conductive material and at least one metal layer having high reflectivity. In an embodiment, each of the electrodes 210 and 220 may have a stacked structure of ITO / silver (Ag) / ITO / IZO, or may be made of an alloy including aluminum (Al), nickel (Ni), and lanthanum (La). However, the disclosure is not limited thereto.

[0221] The first insulating layer 510 is disposed on the via layer 200, the first electrode 210, and the second electrode 220. The first insulating layer 510 is disposed to partially cover the first electrode 210 and the second electrode 220. The first insulating layer 510 may be disposed to cover a majority of the top surfaces of the first electrode 210 and the second electrode 220 while exposing a portion of the first electrode 210 and the second electrode 220. The first insulating layer 510 may be disposed to expose some of the top surfaces of the first electrode 210 and the second electrode 220 (e.g., a portion of the top surface of the first electrode branch 210B disposed on the first inner bank 410 and a portion of the top surface of the second electrode branch 220B disposed on the second inner bank 420). That is, the first insulating layer 510 may be formed on substantially the entire surface of the via layer 200, but the first insulating layer 510 may have an opening through which the first electrode 210 and the second electrode 220 are partially exposed. The opening of the first insulating layer 510 may be positioned to expose the relatively flat top surfaces of the first electrode 210 and the second electrode 220.

[0222] In an embodiment, the first insulating layer 510 may be formed to have a step so that a portion of the top surface of the first insulating layer 510 is recessed between the first electrode 210 and the second electrode 220. In some embodiments, the first insulating layer 510 may include an inorganic insulating material, and a portion of the top surface of the first insulating layer 510, which is provided to cover the first electrode 210 and the second electrode 220, may be recessed due to the step of a member provided thereunder. The light-emitting element 300 provided on the first insulating layer 510 between the first electrode 210 and the second electrode 220 may form a void space relative to the recessed top surface of the first insulating layer 510. The light-emitting element 300 may be provided partially spaced apart from the top surface of the first insulating layer 510 with a void between the light-emitting element 300 and the top surface of the first insulating layer 510, and the void may be filled with a material forming the second insulating layer 520, which will be described later.

[0223] However, the disclosure is not limited thereto. The first insulating layer 510 may be formed to have a flat top surface so that the light-emitting element 300 is disposed on the first insulating layer 510. The top surface may extend in a direction toward the first electrode 210 and the second electrode 220 and may terminate at the inclined side surfaces of the first electrode 210 and the second electrode 220. That is, the first insulating layer 510 may be disposed in an area where the electrodes 210 and 220 overlap with the inclined side surfaces of the first inner bank 410 and the second inner bank 420, respectively. The contact electrodes 261 and 262, which will be described later, may contact the exposed areas of the first electrode 210 and the second electrode 220 and may smoothly contact the ends of the light-emitting element 300 on the flat top surface of the first insulating layer 510.

[0224] The first insulating layer 510 can protect the first electrode 210 and the second electrode 220 while insulating the first electrode 210 and the second electrode 220 from each other. In addition, the light-emitting element 300 disposed on the first insulating layer 510 can be prevented from being damaged due to direct contact with other components. However, the shape and structure of the first insulating layer 510 are not limited thereto.

[0225] The light-emitting element 300 may be disposed on the first insulating layer 510 between the electrodes 210 and 220. For example, at least one light-emitting element 300 may be disposed on the first insulating layer 510 disposed between the electrode branches 210B and 220B. However, not limited thereto, at least some of the light-emitting elements 300 disposed in each subpixel PXn may be placed in an area other than the area between the electrode branches 210B and 220B. In addition, the light-emitting element 300 may be disposed so that some areas of the light-emitting element 300 overlap with the electrodes 210 and 220. The light-emitting element 300 may be disposed on facing ends of the first electrode branch 210B and the second electrode branch 220B, and may be electrically connected to the electrodes 210 and 220 via the contact electrodes 261 and 262.

[0226] As stated above, a light emitting element 300 configured to emit light having different wavelengths L1, L2, and L3 may be provided in each of the sub-pixels PXn. Although the figure only shows the first sub-pixel PX1 in which the first light emitting element 301 is provided, the above structure and features may also be applied to the second sub-pixel PX2 and the third sub-pixel PX3.

[0227] In addition, the light-emitting element 300 may include a plurality of layers arranged in a direction parallel to the through-hole layer 200. The light-emitting element 300 of the display device 10 according to one embodiment may be arranged such that the extension direction of the main body portion 300A is parallel to the through-hole layer 200. In the light-emitting element 300, the insulating film 380, the second electrode layer 372 or the first electrode layer 371, the second semiconductor layer 320, the active layer 330, and the first semiconductor layer 310 may be sequentially arranged on the first insulating layer 510 in a direction perpendicular to the through-hole layer 200 in a cross-sectional view. In addition, since each of the layers of the light-emitting element 300 is formed to surround the outer surface of the other layers, the light-emitting element 300 provided in the display device 10 may have a symmetrical structure with respect to the first portion NR1 of the first semiconductor layer 310 in a cross-sectional view. That is, the light emitting element 300 may have a shape in which the active layer 330, the second semiconductor layer 320, the second electrode layer 372 or the first electrode layer 371, and the insulating film 380 are stacked sequentially from the first semiconductor layer 310 in a direction perpendicular to the through-hole layer 200. However, the disclosure is not limited thereto. The order in which the multiple layers of the light emitting element 300 are arranged may be opposite to the order mentioned above. In some cases, if the light emitting element 300 has a different structure, the multiple layers may be arranged in a direction horizontal to the through-hole layer 200.

[0228] In the display device 10 according to one embodiment, at least a portion of the insulating film 380 of the light-emitting element 300 may be removed to partially expose the first electrode layer 371 and the second electrode layer 372. During the manufacturing process of the display device 10, the insulating film 380 may be partially removed during the step of forming the second insulating layer 520 covering the outer surface of the light-emitting element 300. The exposed first electrode layer 371 may contact the second contact electrode 262, which will be described later, and the exposed second electrode layer 372 may contact the first contact electrode 261. As described above, since the first electrode layer 371 and the second electrode layer 372 of the light-emitting element 300 are spaced apart from each other and not connected to each other, even if the first contact electrode 261 and the second contact electrode 262 are in contact with the second electrode layer 372 and the first electrode layer 371, respectively, they may not be electrically connected to each other.

[0229] Furthermore, the light-emitting element 300 may include a first end portion 300B having an inclined side surface and a second end portion 300C extending to a width smaller than that of the main portion 300A, with the main portion 300A being located between the first end portion 300B and the second end portion 300C. In the light-emitting element 300 disposed on the first insulating layer 510, the side surface of the main portion 300A may partially contact the first insulating layer 510, and the first end portion 300B and the second end portion 300C may be spaced apart from the first insulating layer 510. A second insulating layer 520 may also be disposed in a region of the light-emitting element 300 where the main portion 300A, the first end portion 300B, and the second end portion 300C are spaced apart from the first insulating layer 510.

[0230] The second insulating layer 520 may be partially disposed on the light-emitting element 300. The second insulating layer 520 may be disposed to partially surround the outer surface of the light-emitting element 300. The second insulating layer 520 may protect the light-emitting element 300 while also securing the light-emitting element 300 during the manufacturing process of the display device 10. Furthermore, in an embodiment, some of the material of the second insulating layer 520 may be disposed between the bottom surface of the light-emitting element 300 and the first insulating layer 510. As described above, the second insulating layer 520 may be formed to fill the gap between the light-emitting element 300 and the first insulating layer 510 formed during the manufacturing process of the display device 10. Thus, the second insulating layer 520 may be formed to surround the outer surface of the light-emitting element 300. However, the disclosure is not limited thereto.

[0231] The second insulating layer 520 may extend in the second direction DR2 between the first electrode branch 210B and the second electrode branch 220B in a plan view. As an example, the second insulating layer 520 may have an island shape or a linear shape on the via layer 200 in a plan view.

[0232] Contact electrodes 261 and 262 are provided on electrodes 210 and 220 and the second insulating layer 520. The first contact electrode 261 and the second contact electrode 262 may be provided spaced apart from each other on the second insulating layer 520. The second insulating layer 520 may insulate the first contact electrode 261 and the second contact electrode 262 from each other to prevent the first contact electrode 261 and the second contact electrode 262 from directly contacting each other.

[0233] Although not shown in the figures, a plurality of contact electrodes 261 and 262 may extend in the second direction DR2 in a plan view and be spaced apart from each other in the first direction DR1. The contact electrodes 261 and 262 may contact at least one end of the light-emitting element 300 and may be electrically connected to the first electrode 210 or the second electrode 220 to receive an electrical signal. The contact electrodes 261 and 262 may include a first contact electrode 261 and a second contact electrode 262. The first contact electrode 261 may be provided on the first electrode branch 210B to contact one end of the light-emitting element 300, and the second contact electrode 262 may be provided on the second electrode branch 220B to contact the other end of the light-emitting element 300.

[0234] The first contact electrode 261 may contact an exposed region of the first electrode 210 on the first inner bank 410, and the second contact electrode 262 may contact an exposed region of the second electrode 220 on the second inner bank 420. The contact electrodes 261 and 262 may be capable of transmitting electrical signals transmitted from the electrodes 210 and 220 to the light emitting element 300, respectively.

[0235] The contact electrodes 261 and 262 may include a conductive material. For example, the contact electrodes 261 and 262 may include ITO, IZO, ITZO, aluminum (Al), etc. However, the disclosure is not limited thereto.

[0236] The passivation layer 550 may be disposed on the first contact electrode 261, the second contact electrode 262, and the second insulating layer 520. The passivation layer 550 may serve to protect components disposed on the via layer 200 from external environments.

[0237] Each of the first insulating layer 510, the second insulating layer 520, and the passivation layer 550 may include an inorganic insulating material or an organic insulating material. In an embodiment, the first insulating layer 510, the second insulating layer 520, and the passivation layer 550 may include an inorganic insulating material such as silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al2O3), aluminum nitride (AlN), etc. The first insulating layer 510, the second insulating layer 520, and the passivation layer 550 may include an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene, cardo resin, siloxane resin, silsesquioxane resin, polymethyl methacrylate, polycarbonate, or polycarbonate synthetic resin. However, the disclosure is not limited thereto.

[0238] Meanwhile, the display device 10 may further include a greater number of insulating layers. According to one embodiment, the display device 10 may further include a third insulating layer configured to protect the first contact electrode 261 .

[0239] Figure 23 is a cross-sectional view of a display device according to another embodiment.

[0240] Reference Figure 23 The display device 10_1 according to the embodiment may further include a third insulating layer 530_1 disposed on the first contact electrode 261_1. Figure 20 The display device 10_1 is different from the display device 10 in that the display device 10_1 further includes a third insulating layer 530_1, and at least a portion of the second contact electrode 262_1 is disposed on the third insulating layer 530_1. In the following description, redundant descriptions will be omitted while focusing on the differences.

[0241] Figure 23 The display device 10_1 may include a third insulating layer 530_1 disposed on the first contact electrode 261_1 and electrically insulating the first contact electrode 261_1 from the second contact electrode 262_1. The third insulating layer 530_1 may be disposed to cover the first contact electrode 261_1, but may not overlap certain areas of the light-emitting element 300, allowing the light-emitting element 300 to connect to the second contact electrode 262_1. The third insulating layer 530_1 may partially contact the first and second contact electrodes 261_1 and 520_1 on the top surface of the second insulating layer 520_1. The third insulating layer 530_1 may be disposed to cover one end of the first contact electrode 261_1 that is on the second insulating layer 520_1. Thus, the third insulating layer 530_1 protects the first contact electrode 261_1 while insulating the first and second contact electrodes 261_1 and 262_1.

[0242] The lateral surface of the third insulating layer 530_1 on the side where the second contact electrode 262_1 is located can be aligned with one lateral surface of the second insulating layer 520_1. However, the disclosure is not limited thereto. In some embodiments, the third insulating layer 530_1 can include the same inorganic insulating material as the first insulating layer 510.

[0243] The first contact electrode 261_1 may be disposed between the first electrode 210_1 and the third insulating layer 530_1, and the second contact electrode 262_1 may be disposed on the third insulating layer 530_1. The second contact electrode 262_1 may partially contact the first insulating layer 510_1, the second insulating layer 520_1, the third insulating layer 530_1, the second electrode 220_1, and the light-emitting element 300. One end of the second contact electrode 262_1 on the side where the first electrode 210_1 is located may be disposed on the third insulating layer 530_1.

[0244] A passivation layer 550_1 may be disposed on the third insulating layer 530_1 and the second contact electrode 262_1 to protect the third insulating layer 530_1 and the second contact electrode 262_1. Hereinafter, redundant descriptions will be omitted.

[0245] Meanwhile, the first electrode 210 and the second electrode 220 of the display device 10 do not necessarily have a shape extending in one direction. The shapes of the first electrode 210 and the second electrode 220 of the display device 10 are not particularly limited as long as the first electrode 210 and the second electrode 220 of the display device 10 are spaced apart from each other to provide a space therebetween in which the light emitting element 300 is disposed.

[0246] Figure 24 is a plan view showing one pixel of a display device according to still another embodiment.

[0247] Reference Figure 24 , at least some areas of the first electrode 210_2 and the second electrode 220_2 of the display device 10_2 according to the embodiment have a curved shape, and the curved areas of the first electrode 210_2 may face the curved areas of the second electrode 220_2 while being spaced apart from each other. Figure 21 The display device 10 is different in that the shapes of the first and second electrodes 210_2 and 220_2 are different from the shapes of the first and second electrodes 210 and 220 of the display device 10. In the following description, redundant description will be omitted while focusing on the differences.

[0248] Figure 24 The first electrode 210_2 of the display device 10_2 may include a plurality of holes HOL. For example, as shown in the figure, the first electrode 210_2 may include a first hole HOL1, a second hole HOL2, and a third hole HOL3 arranged in the second direction DR2. However, embodiments are not limited thereto, and the first electrode 210_2 may include a larger number of holes HOL, a smaller number of holes HOL, or even a single hole HOL. Below, a description will be provided of an example in which the first electrode 210_2 includes the first hole HOL1, the second hole HOL2, and the third hole HOL3.

[0249] In an embodiment, the first hole HOL1, the second hole HOL2, and the third hole HOL3 may have a circular shape in a plan view. Thus, the first electrode 210_2 may have a curved region formed by the hole HOL and face the second electrode 220_2 in these curved regions. However, this is merely exemplary, and the disclosure is not limited thereto. The first hole HOL1, the second hole HOL2, and the third hole HOL3 are not particularly limited in shape, as long as they can provide space for accommodating the second electrode 220_2 therein. As an example, in a plan view, the hole may have an elliptical shape, a polygonal shape such as a rectangle, or the like.

[0250] The number of second electrodes 220_2 may be plural, and multiple second electrodes 220_2 may be provided in each subpixel PXn. As an example, in each subpixel PXn, three second electrodes 220_2 may be provided in each subpixel PXn to correspond to the first hole HOL1, the second hole HOL2, and the third hole HOL3 of the first electrode 210_2. The second electrodes 220_2 may be provided in the first hole HOL1, the second hole HOL2, and the third hole HOL3, respectively, which are surrounded by the first electrode 210_2.

[0251] In an embodiment, the hole HOL of the first electrode 210_2 may have a curved surface, and each second electrode 220_2 placed in the corresponding hole HOL of the first electrode 210_2 may also have a curved surface and be disposed to face the first electrode 210_2 with a gap between the second electrode 220_2 and the first electrode 210_2. Figure 24 As shown in FIG, the first electrode 210_2 may include a circular hole HOL in a plan view, and the second electrode 220_2 may have a circular shape in a plan view. The curved surface of the region where each hole HOL is formed in the first electrode 210_2 may face the curved outer surface of the corresponding one of the second electrodes 220_2, with a gap between the curved surface of the region where each hole HOL is formed in the first electrode 210_2 and the curved outer surface of the corresponding one of the second electrodes 220_2. For example, the first electrode 210_2 may be arranged to surround the outer surface of the second electrode 220_2.

[0252] As stated above, the light-emitting element 300 may be disposed between the first electrode 210_2 and the second electrode 220_2. The display device 10_2 according to the embodiment may include a second electrode 220_2 having a circular shape and a first electrode 210_2 disposed around the second electrode 220_2, and a plurality of light-emitting elements 300 may be arranged along the outer surface of the second electrode 220_2. As stated above, since the light-emitting elements 300 have a shape extending in one direction, the light-emitting elements 300 arranged along the curved outer surface of the second electrode 220_2 in each subpixel PXn can be arranged such that their extension directions point in different directions. Depending on the direction in which the extension direction of the light-emitting element 300 points, each subpixel PXn can have a variety of different light-emitting directions. In the display device 10_2 according to the embodiment, by configuring the first electrode 210_2 and the second electrode 220_2 to have a curved shape, the light-emitting elements 300 disposed therebetween can be oriented in different directions, thereby improving the lateral visibility of the display device 10_2.

[0253] While summarizing the specific embodiments, it will be appreciated by those skilled in the art that many changes and modifications may be made to the preferred embodiments without departing substantially from the principles of the invention. Therefore, the preferred embodiments of the disclosed invention are used in a general and descriptive sense only and not for purposes of limitation.

Claims

1. A light-emitting element, comprising: a semiconductor core having at least a partial area extending in one direction and including a first end portion, a second end portion, and a main body portion between the first end portion and the second end portion; a first electrode layer disposed to surround the second end portion of the semiconductor core; a second electrode layer disposed to surround at least the first end portion of the semiconductor core and spaced apart from the first electrode layer; as well as an insulating film disposed to surround the semiconductor core, the first electrode layer, and the second electrode layer, wherein the second end portion of the semiconductor core has a diameter smaller than a diameter of the main body portion, wherein both the first end portion and the second end portion have outer surfaces inclined relative to the one direction, The second end portion is recessed from the main body portion at a boundary portion between the main body portion and the second end portion, and The diameter of the second end portion decreases as the distance from the boundary portion increases.

2. The light-emitting element according to claim 1, wherein The first electrode layer is spaced apart from the main body portion to surround at least a portion of the second end portion, and The second electrode layer surrounds the first end portion and the main body portion.

3. The light-emitting element according to claim 2, wherein In the first electrode layer, a thickness of a side adjacent to the main body portion is smaller than a thickness of another side opposite to the one side.

4. The light-emitting element according to claim 2, wherein In the main body portion, a diameter of a region adjacent to the first end portion is larger than a diameter of a region adjacent to the second end portion. The light-emitting element according to claim 1 , wherein The semiconductor core comprises: a first semiconductor layer; an active layer surrounding at least a portion of the first semiconductor layer; and a second semiconductor layer surrounding a portion of the first semiconductor layer and the active layer; The first electrode layer contacts the first semiconductor layer, and the second electrode layer contacts the second semiconductor layer. The light-emitting element according to claim 5 , wherein The first semiconductor layer includes: a first portion extending in the one direction; a second portion located on one side of the first portion; and a third portion located on the other side of the first portion and extending in the one direction, Wherein, the second portion has an inclined outer surface.

7. The light-emitting element according to claim 6, wherein The diameter of the third portion is smaller than the diameter of the first portion, and An outer surface of the third portion is recessed from an outer surface of the first portion toward a center of the first semiconductor layer.

8. The light-emitting element according to claim 7, wherein The first electrode layer is provided to surround a partial area of ​​the outer surface of the third portion while being spaced apart from the first portion, and An end surface of the third portion opposite to the first portion is exposed.

9. The light-emitting element according to claim 6, wherein The active layer is disposed around an outer surface of the first portion.

10. The light-emitting element according to claim 9, wherein The first semiconductor layer is doped with first conductivity type impurities, The second semiconductor layer is doped with second conductivity type impurities, The first semiconductor layer includes a doped region, in which at least a portion of the second portion is doped with impurities of the second conductivity type, and The active layer is further disposed between the doped region and the second semiconductor layer.

11. A method for manufacturing a light-emitting element, the method comprising: forming a semiconductor core on a lower substrate, the semiconductor core comprising a first end portion, a second end portion, and a main body portion between the first end portion and the second end portion; forming a first electrode layer surrounding at least a portion of the second end portion of the semiconductor core and a second electrode layer surrounding the first end portion and the main portion and spaced apart from the first electrode layer; as well as An insulating film is formed around the first electrode layer, the second electrode layer, and the semiconductor core, and separation from the lower substrate is performed.

12. The manufacturing method according to claim 11, wherein: In the semiconductor core, a diameter of the second end portion is smaller than a diameter of the main body portion, and An outer surface of the second end portion has a shape recessed from an outer surface of the main body portion.

13. The manufacturing method according to claim 12, wherein: The steps of forming the first electrode layer and the second electrode layer are performed by depositing materials of the first electrode layer and the second electrode layer on an outer surface of the semiconductor core, and The material is not deposited between the second end portion and the main body portion.

14. The manufacturing method according to claim 12, wherein: The steps of forming the semiconductor core include: forming a first mask layer disposed on the lower substrate, a second mask layer disposed on the first mask layer, and an etching hole penetrating the first mask layer and the second mask layer to partially expose the lower substrate; growing a first semiconductor layer along the etched hole and removing the second mask layer to expose a portion of the first semiconductor layer; forming an active layer and a second semiconductor layer on the exposed first semiconductor layer; and The first mask layer is removed.

15. The manufacturing method according to claim 14, wherein: A diameter of the etching hole of the first mask layer is smaller than a diameter of the etching hole of the second mask layer.

16. The manufacturing method according to claim 15, wherein: The first semiconductor layer includes: The first part extends in one direction; a second portion located on one side of the first portion; and a third portion located on the other side of the first portion and extending in the one direction, The third portion is formed by growing along the etching hole of the first mask layer, and the first portion is formed by growing along the etching hole of the second mask layer.

17. A display device, comprising: substrate; a first electrode, disposed on the substrate; a second electrode disposed on the substrate and spaced apart from the first electrode; as well as at least one light-emitting element disposed between the first electrode and the second electrode, Wherein, the light emitting element includes: a semiconductor core having at least a partial area extending in one direction and including a first end portion, a second end portion, and a main body portion between the first end portion and the second end portion; a first electrode layer disposed to surround the second end portion of the semiconductor core; a second electrode layer disposed to surround at least the first end portion of the semiconductor core and spaced apart from the first electrode layer; and an insulating film disposed to surround the semiconductor core, the first electrode layer, and the second electrode layer, wherein the second end portion of the semiconductor core has a diameter smaller than a diameter of the main body portion, wherein both the first end portion and the second end portion have outer surfaces inclined relative to the one direction, The second end portion is recessed from the main body portion at a boundary portion between the main body portion and the second end portion, and The diameter of the second end portion decreases as the distance from the boundary portion increases.

18. The display device according to claim 17, wherein: The first electrode layer is spaced apart from the main body portion to surround at least a portion of the second end portion, and The second electrode layer surrounds the first end portion and the main body portion.

19. The display device according to claim 18, further comprising: a first contact electrode, contacting the first electrode and the second electrode layer; as well as The second contact electrode contacts the second electrode and the first electrode layer.

20. The display device according to claim 19, wherein At least a portion of the insulating film of the light emitting element is removed to partially expose the first electrode layer and the second electrode layer. The first contact electrode contacts the exposed second electrode layer, and The second contact electrode partially contacts the exposed first electrode layer and the second end portion of the semiconductor core.

21. The display device according to claim 18, wherein The display device includes a first pixel and a second pixel, The light emitting element includes a first light emitting element provided in the first pixel and a second light emitting element provided in the second pixel, and A diameter of a central portion of the first light emitting element is smaller than a diameter of a central portion of the second light emitting element.

22. The display device according to claim 21, wherein The first light emitted from the first light emitting element has a central wavelength band shorter than a central wavelength band of the second light emitted from the second light emitting element.

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