Magnetic memory

Abstract

The magnetic memory of the embodiment includes: a first wiring and a second wiring; a non-magnetic conductor portion arranged in a first direction; a first magnetic member including a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, and the first magnetic member is arranged so as to extend from the first portion to the second portion in the first direction, and surround the non-magnetic conductor portion; an insulating portion arranged between the non-magnetic conductor portion and the first magnetic member; and a control circuit electrically connected to the non-magnetic conductor portion, the first wiring, and the second wiring.

Description

[0001] [Related Application]

[0002] This application claims priority to Japanese Patent Application No. 2020-150768 (Filing date: September 8, 2020) as a base application. This application contains all contents of the base application by reference thereto. TECHNICAL FIELD

[0003] Embodiments of the present application relate to a magnetic memory. BACKGROUND

[0004] A magnetic memory is known in which a magnetic wall of a magnetic element is moved (shifted) by passing a current through the magnetic element. The magnetic memory is, for example, provided with a first wiring electrically connected to one end of the magnetic element and a second wiring electrically connected to the other end of the magnetic element. The magnetic wall is moved by passing a shift current that shifts the magnetic wall of the magnetic element between the one end and the other end of the magnetic element.

[0005] The magnetic memory having such a configuration has a problem that a shift error can occur. SUMMARY

[0006] The present embodiment provides a magnetic memory capable of suppressing occurrence of a shift error.

[0007] The magnetic memory of the present embodiment includes a first wiring and a second wiring; a non-magnetic conductor portion provided in a first direction; a first magnetic element including a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, and the first magnetic element is disposed so as to extend from the first portion to the second portion in the first direction, and surround the non-magnetic conductor portion; an insulating portion disposed between the non-magnetic conductor portion and the first magnetic element; and a control circuit electrically connected to the non-magnetic conductor portion, the first wiring, and the second wiring. BRIEF DESCRIPTION OF DRAWINGS

[0008] Figure 1 is a cross-sectional view of a magnetic memory of a first embodiment.

[0009] Figure 2 is a view for explaining an operation of the magnetic memory of the first embodiment.

[0010] Figure 3A 、 3B is a view for explaining an effect of applying a voltage to the magnetic memory of the first embodiment.

[0011] Figures 4A to 4C is a waveform view for explaining a shift operation of the first example.

[0012] Figure 5A 5B is a waveform chart for explaining the bit shift operation of the second example.

[0013] Figure 6 is a cross-sectional view showing a magnetic memory of a variation of the first embodiment.

[0014] Figure 7 is a circuit diagram showing the configuration of a magnetic memory of the second embodiment.

[0015] Figure 8 is a circuit diagram showing the configuration of a magnetic memory of the third embodiment.

[0016] Figure 9 is a cross-sectional view showing a manufacturing step of a magnetic memory of the fourth embodiment.

[0017] Figure 10 is a cross-sectional view showing a manufacturing step of a magnetic memory of the fourth embodiment.

[0018] Figure 11 is a cross-sectional view showing a manufacturing step of a magnetic memory of the fourth embodiment.

[0019] Figure 12 is a cross-sectional view showing a manufacturing step of a magnetic memory of the fourth embodiment.

[0020] Figure 13A 13B is a cross-sectional view and a plan view showing a manufacturing step of a magnetic memory of the fourth embodiment.

[0021] Figure 14 is a cross-sectional view showing a manufacturing step of a magnetic memory of the fourth embodiment.

[0022] Figure 15 is a cross-sectional view showing a manufacturing step of a magnetic memory of the fourth embodiment.

[0023] Figure 16A 16B is a cross-sectional view and a plan view showing a manufacturing step of a magnetic memory of the fourth embodiment.

[0024] Figure 17 is a cross-sectional view showing a manufacturing step of a magnetic memory of the fourth embodiment.

[0025] Figure 18 is a cross-sectional view showing a manufacturing step of a magnetic memory of the fourth embodiment.

[0026] Figure 19A 19B is a cross-sectional view and a plan view showing a manufacturing step of a magnetic memory of the fourth embodiment. ​​​​

[0027] Figure 20 is a sectional view showing manufacturing steps of the magnetic memory of the 4th embodiment.

[0028] Figure 21 is a circuit diagram showing the configuration of the magnetic memory of the 2nd embodiment.

[0029] Figure 22 is a diagram for explaining the size of the region of the magnetic member and the narrow portion on the x-y plane.

[0030] Figure 23 is a circuit diagram showing the configuration of the magnetic memory of the 2nd embodiment. DETAILED DESCRIPTION

[0031] (1st Embodiment)

[0032] Figure 1 The magnetic memory of the 1st embodiment is shown. The magnetic memory of the 1st embodiment has a memory cell 10. The memory cell 10 has a magnetic member (magnetic memory line) 12, a non-magnetic conductive layer 13, a magnetic resistance element 14, a magnetic yoke 40, a non-magnetic conductive layer 50, a non-magnetic conductive layer 52, a non-magnetic conductive body portion 54, a bit line BL, and a source line SL.

[0033] The magnetic member 12 has a 1st end portion 12a and a 2nd end portion 12b, includes a perpendicular magnetic member extending in a 1st direction (z direction) along a direction from the 1st end portion 12a to the 2nd end portion 12b, and has a cylindrical shape. For example, when the magnetic member 12 is cut with a plane perpendicular to the z direction, the shape on the outside of the cross section thereof can be any one of a circle, an ellipse, or a polygon. Further, since the magnetic member 12 includes a perpendicular magnetic member, the easy magnetization axis is a direction perpendicular to the z direction. Therefore, as shown by the arrow of Figure 1 the magnetic member 12, the magnetization direction is radial, and has an outward magnetization direction or an inward magnetization direction.

[0034] Furthermore, the magnetic component 12 has a plurality of regions 12c arranged along the z-direction, and narrow portions 12d arranged on the outer surface of the magnetic component 12 are located between these regions 12c. Each region 12c has at least one magnetic region. When a driving current (displacement current) is supplied between the first end 12a and the second end 12b of the magnetic component 12, the magnetic wall of the magnetic component 12 moves along the z-direction; when no driving current is supplied, the magnetic wall stops at the narrow portion 12d. The first end 12a of the magnetic component 12 is electrically connected to the magnetoresistive element 14, and the second end 12b is electrically connected to the bit line BL. Here, in this specification, "A is electrically connected to B" can mean that A and B are directly connected, or indirectly connected via a conductor, a resistance changing part (including a magnetoresistive element, etc.), a switching part (e.g., a selector, a transistor, etc.). Furthermore, Figure 1 In this configuration, a non-magnetic conductive layer 13 is provided between the first end 12a and the magnetoresistive element 14. The non-magnetic conductive layer 13 can also be used as a bit line.

[0035] Additionally, in the magnetic component 12, such as Figure 22 As shown, region 12c1, narrowed portion 12d1, region 12c2, and narrowed portion 12d2 are arranged along the z-direction. In a cross-section along the z-direction that includes the magnetic component 12, the non-magnetic conductive portion 54 (described later), and the insulating film 56 (described later), when the length between the ends 12c1a and 12c1b of region 12c1 in the x-direction is defined as d1, the length between the ends 12d1a and 12d1b of narrowed portion 12d1 in the x-direction is defined as d2, the length between the ends 12c2a and 12c2b of region 12c2 in the x-direction is defined as d3, and the length between the ends 12d2a and 12d2b of narrowed portion 12d2 in the x-direction is defined as d4, the following condition is satisfied:

[0036] d1>d2, d4

[0037] d3 > d2, d4.

[0038] The magnetoresistive element 14 reads out information written in the magnetic member 12, for example, using an MTJ (Magnetic Tunnel Junction) element. In the following description, the magnetoresistive element 14 is assumed to be an MTJ element. The MTJ element 14 has a free layer (magnetization free layer) 14a whose magnetization direction is variable, a fixed layer (magnetization fixed layer) 14c whose magnetization direction is fixed, and a non-magnetic insulating layer (tunnel barrier layer) 14b disposed between the free layer 14a and the fixed layer 14c. In the MTJ element 14, the free layer 14a is electrically connected to the first end portion 12a of the magnetic member 12 via the non-magnetic conductive layer 13, and the fixed layer 14c is electrically connected to the source line SL. The source line SL can also be a bit line. Here, "magnetization direction variable" means that the magnetization direction can change in response to a magnetic flux leakage from the magnetic member 12 in a readout operation described later, and "magnetization direction fixed" means that the magnetization direction does not change in response to the magnetic flux leakage from the magnetic member 12.

[0039] In addition, the bit line BL extends in the y direction and has an opening in a central portion. The opening has a shape in which an inner diameter is the same as or smaller than the cylinder of the magnetic member 12. The second end portion 12b of the magnetic member 12 is electrically connected to a region outside the opening of the bit line BL. Field lines FL1, FL2 are provided above the bit line BL. These field lines FL1, FL2 extend in the y direction.

[0040] The magnetic yoke 40 contains, for example, a soft magnetic material and is provided so as to surround a portion of each of the bit line BL and the field lines FL1, FL2. In addition, the magnetic yoke 40 has a first portion 40a1, 40a2, a second portion 40b, a third portion 40c1, 40c2, a fourth portion 40d1, 40d2, and a fifth portion 40e. The first portion 40a1 and the first portion 40a2 are disposed near the second end portion 12b with the magnetic member 12 interposed therebetween, extend in the x direction, and are further disposed on the lower surface side of the bit line BL. That is, the first portion 40a1 and the first portion 40a2 are disposed so that one end of each thereof faces the second end portion 12b of the magnetic member 12 with the second end portion 12b interposed therebetween.

[0041] The second portion 40b is provided inside the cylinder of the magnetic member 12 near the second end portion 12b and is connected to the fifth portion. These second portion 40b and fifth portion extend in the z direction and pass through the opening of the bit line BL, thereby electrically insulating the bit line BL.

[0042] The third portion 40c1 extends in the z direction and is connected at one end to the other end of the first portion 40a1. The third portion 40c2 extends in the z direction and is connected at one end to the other end of the first portion 40a2. The fourth portion 40d1 extends in the x direction and is connected at one end to the other end of the third portion 40c1. The fourth portion 40d2 extends in the x direction and is connected at one end to the other end of the third portion 40c2. The fifth portion 40e extends in the z direction and is connected at both ends to the fourth portions 40d1, 40d2.

[0043] The first portion 40a1, the third portion 40c1, the fourth portion 40d1, the fifth portion 40e, and the second portion 40b enclose a portion of the field line FL1, and the first portion 40a2, the third portion 40c2, the fourth portion 40d2, the fifth portion 40e, and the second portion 40b enclose a portion of the field line FL2. That is, the first portion 40a1, the third portion 40c1, the fourth portion 40d1, the fifth portion 40e, and the second portion 40b constitute a first magnetic circuit, and the induced magnetic field generated by the write current supplied to the field line FL1 by the control circuit 100 is transmitted to the second end portion of the magnetic member 12. In addition, the first portion 40a2, the third portion 40c2, the fourth portion 40d2, the fifth portion 40e, and the second portion 40b constitute a second magnetic circuit, and the induced magnetic field generated by the write current supplied to the field line FL2 by the control circuit 100 is transmitted to the second end portion of the magnetic member 12. Figure 2 The induced magnetic field generated by the write current supplied to the field line FL1 by the control circuit 100 shown in the drawing is transmitted to the second end portion of the magnetic member 12. In addition, the first portion 40a2, the third portion 40c2, the fourth portion 40d2, the fifth portion 40e, and the second portion 40b constitute a second magnetic circuit, and the induced magnetic field generated by the write current supplied to the field line FL2 by the control circuit 100 is transmitted to the second end portion of the magnetic member 12.

[0044] The non-magnetic conductive layer 50 is disposed in the cylinder of the magnetic member 12 and is electrically connected to the second portion 40b of the yoke 40. The non-magnetic conductive layer 52 is disposed in the cylinder of the magnetic member 12.

[0045] The non-magnetic conductive member 54 is disposed in the cylinder of the magnetic member 12 in the z direction, is connected at one end to the non-magnetic conductive layer 50, and is connected at the other end to the non-magnetic conductive layer 52. The non-magnetic conductive member 54 is electrically insulated from the magnetic member 12 by the insulating film 56. The insulating film 56 is preferably thinner in the portion corresponding to the narrowed portion 12d of the magnetic member 12 than in the portion corresponding to the region 12c.

[0046] As shown in Fig. 6, the magnetic member 12 is formed by a cylindrical body 12a, a narrowed portion 12b, and a narrowed portion 12d. The cylindrical body 12a is formed by a magnetic material such as a ferrite. The narrowed portion 12b is formed by a non-magnetic material such as a resin. The narrowed portion 12d is formed by a non-magnetic material such as a resin. Figure 2As shown, the magnetic memory of the first embodiment includes a displacement current supply circuit 110 that supplies a displacement current that displaces the magnetic wall of the magnetic member 12 between the bit line BL and the source line SL, and a voltage supply circuit 120 that supplies a voltage between the yoke 40 and the source line SL. The voltage supply circuit 120 can also be electrically connected to the bit line BL, in which case a voltage is supplied between the yoke 40 and the bit line BL. Further, a control circuit 100 that controls the displacement current supply circuit 110 and the voltage supply circuit 120 is provided. In addition, the control circuit 100 supplies a write current to the field lines FL1, FL2.

[0047] (Writing operation)

[0048] Next, the writing operation is described. The control circuit 100 supplies write currents in opposite directions to the field lines FL1, FL2, and uses the write currents to generate an induced magnetic field. This induced magnetic field is intensified by the first magnetic circuit and the second magnetic circuit that surround the field lines FL1, FL2, respectively, and is transmitted to the second end portion 12b of the magnetic member 12, and information (magnetization direction) is written to the second end portion 12b. The displacement current supply circuit 110 is used to cause the displacement current Is to flow between the bit line BL and the source line SL, thereby displacing the magnetic wall. The written information is displaced toward the first end portion 12a of the magnetic member 12, and thus the next information can be written to the second end portion 12b.

[0049] In addition, the writing operation can also cause a current to flow in the magnetic member 12 via an MTJ (Magnetic Tunnel Junction), thereby causing a magnetic moment to flip using spin injection. The same applies to the following embodiments.

[0050] (Reading operation)

[0051] Next, the reading operation is described. First, the displacement current supply circuit 110 is used to cause the displacement current Is to flow between the bit line BL and the source line SL, thereby displacing the magnetic wall, and thus the information to be read is displaced toward the first end portion 12a of the magnetic member 12. The magnetic wall is displaced in proportion to the time for which the displacement current Is is applied, and when the displacement current Is is cut off, the magnetic wall is displaced to the narrowed portion 12d in the vicinity of the magnetic member 12 and stops. In this embodiment, the voltage supply circuit 120 is used to supply the voltage Vc between the yoke 40 and the source line SL while the displacement current Is is supplied. Thus, the voltage Vc is applied between the magnetic member 12 that is electrically connected to the source line SL and the non-magnetic conductor portion 54 that is electrically connected to the yoke 40.

[0052] In the case where the voltage Vc between the magnetic member 12 and the non-magnetic conductor portion 54 is negative, for example Figure 3AIn the case shown, that is, in the case where the potential applied to the magnetic member 12 is higher than the potential applied to the non-magnetic conductor portion 54, the magnetic anisotropy of the magnetic member 12 becomes large, and the magnetic wall becomes easy to stop. Thus, compared to the case where no voltage Vc is applied, displacement errors are less likely to occur, and displacement errors can be suppressed.

[0053] In addition, in the case where the voltage Vc between the magnetic member 12 and the non-magnetic conductor portion 54 is positive, for example Figure 3B In the case shown, that is, in the case where the potential applied to the magnetic member 12 is lower than the potential applied to the non-magnetic conductor portion 54, the magnetic anisotropy of the magnetic member 12 becomes small, and the magnetic wall becomes easy to move. In addition, regarding the change in magnetic anisotropy by voltage application, for example, it is described in a paper (Nozaki, T; et al, Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM. Micromachines 2019, 10, 327, Fig. 2 and the description related thereto).

[0054] In addition, as in the present embodiment, the portion of the insulating film 56 corresponding to the narrowed portion 12d of the magnetic member 12 has a film thickness thinner than the film thickness of the portion corresponding to the region 12c. Thus, in the case where the voltage Vc is applied, the magnetic anisotropy of the narrowed portion 12d of the magnetic member 12 becomes larger than that of the region 12c, and the magnetic wall becomes easy to stop.

[0055] Based on the above, with reference to Figures 4A to 4C The first and second examples of displacement operation in the present embodiment will be described. Figure 4A A timing chart showing the voltage Vc supplied in the first and second examples of displacement operation, Figure 4B A timing chart showing the displacement current Is supplied in the first example of displacement operation, Figure 4C A timing chart showing the displacement current Is supplied in the second example of displacement operation.

[0056] In the first and second examples, the negative voltage Vc is supplied at time t1, and the displacement current Is is supplied at time t2 (> t1) thereafter. As a result, the magnetic wall starts to move. The supply of the displacement current Is is stopped at time t3 (> t2), and the movement of the magnetic wall stops. The supply of the voltage Vc is stopped at time t4 (> t3). As a result, the magnetic wall originally present in the narrowed portion 12d moves to the next narrowed portion 12d adjacent in the direction of the first end portion 12a. That is, the one bit of data stored in one region 12c or the second end portion 12b of the magnetic member 12 is shifted by one bit toward the first end portion 12a. Thereafter, the negative voltage Vc is supplied at time t5 (> t4), and the displacement current Is is supplied at time t6 (> t5), and the magnetic wall starts to move. The supply of the displacement current Is is stopped at time t7 (> t6), and the movement of the magnetic wall stops. The supply of the voltage Vc is stopped at time t8 (> t7). As a result, the magnetic wall originally present in the narrowed portion 12d moves to the next narrowed portion 12d adjacent in the direction of the first end portion 12a. That is, the one bit of data stored in one region 12c of the magnetic member 12 is shifted by one bit toward the first end portion 12a.

[0057] In the first and second examples, the displacement current Is is supplied during the period in which the negative voltage is supplied as the voltage Vc. That is, the negative voltage is supplied to make the magnetic anisotropy of the magnetic member 12 large, and the magnetic wall is made to stop easily, and the displacement current Is is supplied. In this case, even if the pulse width (t3-t2 or t7-t6) of the displacement current Is fluctuates, as long as the displacement current Is is supplied during the period in which the voltage Vc is supplied, the result of the displacement operation will be the same, and the displacement error can be suppressed.

[0058] Next, the third example of the displacement operation in the present embodiment will be described with reference to Figure 5A and 5B The third example of the displacement operation in the present embodiment will be described. Figure 5A a timing chart showing the voltage Vc supplied in the third example of the displacement operation, Figure 5BA timing chart of a displacement current Is supplied in the third example of the displacement operation. In the third example, the polarity of the voltage Vc is changed from positive to negative during the supply of the fixed displacement current Is. For example, a positive voltage Vc is applied at time tO and the displacement current Is is supplied. The magnetic wall is made to easily move by the supply of the positive voltage Vc, and thus the magnetic wall starts to move. At time tl (> tO), the polarity of the voltage Vc is changed from positive to negative, and the magnetic wall is made to easily stop. Thus, one bit of data stored in one region 12c of the magnetic member 12 is displaced by one bit toward the first end portion 12a. At time t2 (> tl), the polarity of the voltage Vc is changed from negative to positive, and at time t3 (> t2), the polarity of the voltage Vc is changed from positive to negative. During this time t2 to time t3, the magnetic wall is made to easily move, and thus the magnetic wall moves. At time t3, the voltage Vc is made negative, and thus the magnetic wall is made to easily stop. At time t4, the application of the voltage Vc is stopped and the supply of the displacement current Is is stopped. Thus, one bit of data stored in one region 12c of the magnetic member 12 is displaced by one bit toward the first end portion 12a.

[0059] In the third example, the polarity of the voltage Vc is changed from positive to negative during the supply of the fixed displacement current. The third example can be implemented in an environment in which RC (Resistance Capacitance) delay is allowed to occur due to the supply of the voltage to the non-magnetic conductor portion 54. In the case of the third example, displacement errors can also be suppressed.

[0060] Such a displacement operation is performed to move information to be read out toward the first end portion 12a of the magnetic member 12. Information corresponding to the magnetic leakage field from the first end portion 12a of the magnetic member 12 is stored in the free layer 14a of the magnetoresistive element 14. Thereafter, a readout current is supplied between the bit line BL and the source line SL, and information is read out based on the voltage between the free layer 14a and the fixed layer 14c of the magnetoresistive element 14.

[0061] As described above, according to the first embodiment, the non-magnetic conductor portion 54 is provided inside the cylinder of the magnetic member 12, and the voltage Vc is supplied between the magnetic member 12 and the non-magnetic conductor portion 54 during the displacement operation, and thus displacement errors can be suppressed.

[0062] In addition, the magnetic member 12 has the region 12c and the narrowed portion 12d, and thus the electric field generated by the voltage Vc supplied during the displacement operation can be made stronger or weaker, and displacement errors can be further suppressed compared to the case in which the narrowed portion is not provided.

[0063] In addition, the magnetic member 12 has a cylindrical shape, and thus the electric flux generated when the voltage Vc is supplied can be efficiently used, and a voltage Vc having a smaller absolute value can be used. Thus, displacement errors can be suppressed even if the magnetic memory is highly integrated.

[0064] (Example of variation)

[0065] Figure 6 This describes a magnetic memory variant of the first embodiment. The magnetic memory of this variant includes... Figure 1 In the magnetic memory of the first embodiment shown, the magnetic component 12 is replaced by a magnetic component 12A. This magnetic component 12A has an asymmetrical structure, where the first slope 12e1 between the region adjacent to the first end 12a side of a narrow portion 12d and the narrow portion 12d is different from the second slope 12e2 between the region adjacent to the second end 12b side of the narrow portion 12d and the narrow portion 12d. Furthermore, in the first embodiment, the first slope and the second slope are the same.

[0066] Figure 6 In this configuration, the first slope 12e1 is gentler than the second slope 12e2. With this slope asymmetry, the magnetic wall tends to shift towards the gentler slope. Therefore, the magnetic wall can be controlled more reliably.

[0067] The magnetic memory in this variation can also achieve the same effect as the first embodiment.

[0068] (Second Implementation)

[0069] Figure 7 This refers to a magnetic memory according to a second embodiment. This magnetic memory of the second embodiment includes storage cells 10 arranged in an array of 2 rows and 2 columns. 11 ~10 22 Each storage unit has 10 ij (i, j = 1, 2) have the same structure as the storage unit 10 in the first embodiment, and include a magnetic component 12. ij One end (free layer) is electrically connected to the magnetic component 12. ij The first end 12a (refer to) Figure 1 ) magnetoresistive element 14 ij Magnetoresistive element 14 ij The other end (fixed layer) of (i, j = 1, 2) is electrically connected to the source line SL in the same way as in the first embodiment. j However, in this embodiment, in the magnetoresistive element 14 ij The other end (fixed layer) of (i, j = 1, 2) is connected to the source line SL. j A switching element 16 is then provided between them. ij .

[0070] Each magnetic component 12 ij (i, j = 1.2) has the same structure as the magnetic component 12 in the first embodiment, and the second end 12b (refer to) Figure 1 Electrically connected to bit line BLi (i = 1, 2). Additionally, in each magnetic component 12 ij Near the second end 12b of (i, j = 1.2), a magnetic yoke (not shown) is provided. Figure 1 The middle part is equivalent to the magnetic yoke 40), and the magnetic yoke is electrically connected to the control line CL. i The control line CL i (i = 1, 2) are electrically connected via the yoke to the corresponding magnetic component 12. ij The conductive component 54 inside the cylinder (j=1,2) (refer to) Figure 1 Furthermore, in this embodiment, the control line CL i (i = 1, 2) and bit line BL i (i = 1, 2) along the same direction ( Figure 7 (The middle line extends in the y-direction). Source line SL j (j = 1, 2) along the control line CL i (i = 1, 2) and bit line BL i (i = 1, 2) The intersection direction (x direction in the diagram) extends. However, it is not limited to this; the control line CL i (i = 1, 2) For example, it can also be used with the source line SL j Extending in the same direction. Additionally, at the alignment line BL... i (j = 1, 2) and control line CL i When a voltage Vc is applied between (i = 1, 2), the control line CL is preferred. i (i = 1, 2) and source line SL j It extends in the same direction, but is not limited to this; for example, it can also extend with the bit line BL. i (i = 1, 2) extend in the same direction.

[0071] Additionally, the field line FL is supplied with write current during information writing. j (j=1,2) along the source line SL j The configuration is such that a portion of it is covered by the corresponding magnetic yoke. Figure 7 In the middle, the field line FL j (j=1,2) extends in the x-direction, but is not limited to this; for example, it can be in the y-direction, or a direction that intersects both the x-direction and the y-direction. Alternatively, it can be a direction that changes direction by means of a sawtooth shape with the magnetic yoke 40.

[0072] In addition, control line CL i (i = 1, 2), bit line BL i (i = 1, 2), source line SL j (j=1,2) and field line FL j (j = 1, 2) and Figure 1In the case shown, it is also electrically connected to the control circuit 100.

[0073] Switching element 16 ij (i, j = 1, 2) could also be a two-terminal switching element. When the voltage applied between the two terminals is below a threshold value, the switching element 16... ij (i, j = 1, 2) represents a "high resistance" state, e.g., non-conductive. When the voltage applied between the two terminals exceeds a threshold, the switching element 16... ij (i, j = 1, 2) becomes a "low resistance" state, for example, an on state. Switching element 16 ij (i, j = 1, 2) The switch element 16 maintains the ON state when a current exceeding the holding current value continuously flows through it. ij (i, j = 1, 2) can also perform this function regardless of the voltage polarity. This switching element 16 ij (i, j = 1, 2) includes at least one chalcogenide selected from the group consisting of Te, Se, and S. Alternatively, it may include a chalcogenide as a compound containing the chalcogenide. The switching element may also include at least one element selected from the group consisting of B, Al, Ga, In, C, Si, Ge, Sn, As, P, and Sb.

[0074] In addition, switching element 16 ij (i, j = 1, 2) can be either a diode or a transistor.

[0075] and then, Figure 7 In the middle, switching element 16 ij (i, j = 1, 2) are arranged in magnetoresistive element 14 ij With source line SL i Between, it can also be like Figure 23 The magnetic component 12 is configured as shown in the variation example. ij With bit line BL j Between. That is, switching element 16 ij (i, j = 1, 2) can be configured in magnetic component 12 ij The first end side (source line SL) i It can also be configured on the second end side (bit line BL). j Side). Switching element 16 ij (i, j = 1, 2) will be discussed later. Figure 8 The third embodiment shown and Figure 21 The same configuration can also be used in the variation of the second embodiment shown.

[0076] In a magnetic memory constructed in this manner, the control circuit 100 directs power to the corresponding field line FL. jSupply write current to the selected memory cell 10 ij (i, j = 1, 2) information is written. Thus, similarly to the case described in the first embodiment, the magnetic component 12 is connected via the corresponding yoke. ij The first end 12a of (i, j = 1, 2) (refer to) Figure 1 Write information.

[0077] Information is read out using control circuit 100, for the selected storage unit 10. ij The control line CL corresponding to (i, j = 1, 2) i With bit line BL i A voltage is supplied between them and the displacement current is applied to the bit line BL. i With source line SL j The information to be read flows between them, allowing the information to be read to be transmitted to the magnetic component 12. ij The first end 12a is displaced. Thereafter, this is done by using control circuit 100 to adjust the selected memory cell 10. ij Bit line BL corresponding to (i, j = 1, 2) i With source line SL j The readout current is supplied between the magnetoresistive elements 14 to measure the magnetoresistive element 14. ij The voltage between the free layer and the fixed layer. Furthermore, the switching element 16 ij The function of (i, j = 1, 2) is to prevent read current from flowing into unselected memory cells.

[0078] The second embodiment also performs the displacement operation in the same way as the first embodiment, thus suppressing displacement errors.

[0079] Additionally, magnetic component 12 ij (i, j = 1, 2) Like the first embodiment, it has region 12c and narrowing portion 12d, so it can add strength to the electric field generated by the voltage Vc supplied during displacement operation, and can further suppress displacement error compared with the case without narrowing portion.

[0080] Additionally, magnetic component 12 ij (i, j = 1, 2) has a cylindrical shape, thus enabling efficient use of the current generated under the supplied voltage Vc, and allowing the use of a voltage Vc with a small absolute value. Therefore, even with high integration of the magnetic memory, displacement errors can be suppressed.

[0081] (Example of variation)

[0082] Figure 21 This describes a magnetic memory variant of the second embodiment. The magnetic memory variant has the following configuration: Figure 7In the magnetic memory shown, field lines FL1 and FL2 are arranged to extend in the same direction (y direction) as bit lines BL1 and BL2, respectively, and control lines CL1 and CL2 are arranged to extend in the same direction (x direction) as source poles SL1 and SL2, respectively.

[0083] In this case, field line FL1 is used for storage cell 10 11 10 12 Writing information, field line FL2 is used to write information to memory cell 10. 21 10 22 Write information. Control line CL1 is electrically connected to magnetic component 12. 11 12 21 At the second end 12b, the control line CL2 is electrically connected to the magnetic component 12. 12 12 22 The second end 12b.

[0084] The magnetic memory in this variation can also achieve the same effect as the magnetic memory in the second embodiment.

[0085] (Third Implementation)

[0086] Figure 8 This refers to a magnetic memory according to a third embodiment. The magnetic memory of this third embodiment has the following configuration: Figure 7 In the magnetic memory of the second embodiment shown, a source plate SP is used instead of source lines SL1 to SL2, and a selection memory cell 10 is provided. ij Select transistor 18 ij To replace the switching element 16 ij (i, j = 1, 2). Select transistor 18. ij (i, j = 1, 2) are set in storage unit 10 ij Magnetic component 12 ij The second end 12b and bit line BL j Between them, the gate is electrically connected to the word line WL i Therefore, bit line BL j (j=1,2) Unlike the second implementation, it extends along the y-direction. Additionally, the word line WL i (i = 1, 2) Extends along the x-direction. The source plate SP is electrically connected to memory cell 10. ij Magnetoresistive element 14 (i, j = 1, 2) ij The fixed layer, and the word line WL i (i=1,2), source plate SP, control line CL i (i = 1, 2), bit line BL j (j=1,2) and field line FL j(j = 1, 2) are electrically connected to the control circuit 100.

[0087] The writing operation of the magnetic memory of the third embodiment is performed in the same manner as the writing operation of the second embodiment.

[0088] The read operation is performed in the following manner. The reading of information is performed using the control circuit 100 to drive the word line WL ij (i, j = 1, 2) corresponding to the selected memory cell 10 i (i = 1, 2) so as to bring the selection transistor 18 i connected to the word line WL ij into an ON state. Thereafter, using the control circuit 100, a voltage is supplied between the control line CL ij corresponding to the selected memory cell 10 i (i, j = 1, 2) and the bit line BL i and a displacement current is supplied between the bit line BL i and the source line SL j so as to displace the information to be read out toward the first end portion 12a of the magnetic member 12 ij . Thereafter, using the control circuit 100, a read current is supplied between the bit line BL ij corresponding to the selected memory cell 10 i (i, j = 1, 2) and the source line SL j and the reading is performed based on the voltage between the free layer and the fixed layer of the magnetoresistive element 14 ij . Further, the function of the selection transistor 18 ij (i, j = 1, 2) is to prevent the read current from flowing into the unselected memory cell.

[0089] The third embodiment also performs the displacement operation in the same manner as the first embodiment, and thus can suppress displacement errors.

[0090] Further, the magnetic member 12 ij (i, j = 1, 2) has the region 12c and the narrowed portion 12d as in the first embodiment, and thus can add strength to the electric field generated by the supply voltage Vc during the displacement operation, and can further suppress displacement errors as compared with the case where the narrowed portion is not provided.

[0091] Further, the magnetic member 12 ij (i, j = 1, 2) has a cylindrical shape, and thus can efficiently use the electric flux generated in the case where the supply voltage Vc is supplied, and can use a voltage Vc having a smaller absolute value. Thus, even if the magnetic memory is highly integrated, displacement errors can be suppressed.

[0092] (Fourth Embodiment)

[0093] Reference Figures 9 to 20 A method for manufacturing a magnetic memory will be described. This fourth embodiment is a method for manufacturing a magnetic memory with a structure corresponding to the magnetic memory of the first embodiment, and its manufacturing steps are shown below. Figures 9 to 20 Furthermore, the magnetic memory manufactured using the manufacturing method of the fourth embodiment possesses... Figure 1 The magnetic memory shown is configured by removing the field line FL1, the third part 40c1 of the yoke 40, and the fourth part 40d1.

[0094] First, for example, a source line SL is formed on a silicon substrate 200, a switching element 16 is formed on the source line SL, and a magnetoresistive element 14 is formed on the switching element 16. Figure 9 At this point, the magnetoresistive element 14, the switching element 16, and the source line SL are covered, for example, by an insulating film 250 containing silicon oxide. The insulating film 250 is planarized using CMP (Chemical Mechanical Polishing) to expose the upper surface of the magnetoresistive element 14. Then, a metal layer 300, for example, containing aluminum, is formed to cover the upper surface of the magnetoresistive element 14 and the upper surface of the insulating film 250.

[0095] Next, an anodizing treatment is performed on the metal layer 300. This anodizing treatment is carried out by using the metal layer 300 or the substrate 200 as the anode and passing an electric current through an electrolyte solution (e.g., any one or a mixture of sulfuric acid, oxalic acid, and phosphoric acid). At this time, the metal layer (aluminum) is oxidized, dissolving into metal ions. These metal ions bond with oxygen in the liquid to form a metal oxide (aluminum oxide), which remains on the surface of the metal layer 300 and continues to grow. At this time, because dissolution and growth occur simultaneously, a fine hole 302 surrounded by aluminum oxide is created on the surface of the aluminum of the metal layer 300. The upper surface of the magnetoresistive element 14 is exposed on the bottom surface of this hole 300. When creating this hole 302, a second voltage, different from the first voltage applied when creating the hole, is periodically applied. During the application of this second voltage, a... Figure 10 The smaller portion (not shown) in the x and y directions. This smaller portion is called... Figure 1 The narrow section 12d is shown. Furthermore, the area near the region where the hole 302 is formed changes from aluminum to aluminum oxide 300A (…). Figure 10 ).

[0096] Secondly, a layer is formed on the upper surface of alumina 300A. Figure 1 The magnetic yoke 40 shown includes its first portions 40a1 and 40a2. These first portions 40a1 and 40a2 are, for example, formed of NiFe. Figure 11Alternatively, an aluminum oxide layer with fine holes 302 can be formed on a substrate different from the substrate on which the magnetoresistive element 14, the switching element 16 and the source line SL are formed, and the structure can be manufactured by bonding these substrates together and grinding the back side of the substrate.

[0097] Secondly, such as Figure 12 As shown, an insulating film 303, such as silicon oxide, is formed covering the upper surfaces of the first portions 40a1 and 40a2 and the sides of the first portions 40a1 and 40a2 within the hole 302. Subsequently, a substrate layer 304, such as W (tungsten), is formed to cover the bottom and side surfaces of the hole 302 and the insulating film 303. Then, a film is formed covering the substrate layer 304 as... Figure 1 The magnetic component 12 shown has a magnetic metal layer 306. This magnetic metal layer 306 contains a magnetic material containing Co and Fe, such as CoFe or CoFeB. Subsequently, an insulating layer 308, for example containing magnesium oxide, is formed to cover the magnetic metal layer 306. Then, a layer is formed to cover the insulating layer 308 as... Figure 1 The nonmagnetic conductive layers 50 and 52 and the nonmagnetic metal layer 310 of the nonmagnetic conductive body portion 54 are shown. The nonmagnetic metal layer 310 is formed in such a way that it also covers the insulating layer 308 formed above the first portions 40a1 and 40a2 and on the bottom and side surfaces of the hole 302.

[0098] Secondly, such as Figure 13A , 13B As shown, a NiFe film, for example, is deposited such that a non-magnetic metal layer 310 covers the upper side of the hole 302 and the area above the first portions 40a1 and 40a2, and the NiFe film and the non-magnetic metal layer 310 are patterned. Thus, the NiFe film becomes a magnetic film 312. Furthermore, Figure 13B Is Figure 13A A top view taken from above. The magnetic film 312 becomes... Figure 1 The second part 40b of the magnetic yoke 40 shown.

[0099] Secondly, such as Figure 14 As shown, an insulating film 314, for example, made of silicon oxide, is formed by embedding vias 302. Then, as... Figure 15 As shown, an opening 316 is formed in the insulating film 314, connecting to the insulating layer 308 above the first part 40a2. Thereafter, as... Figure 16A , 16B As shown, a metal inlay method is used to embed the opening 316 in the wiring 318 containing W, for example. Figure 16B Is Figure 16A Top view from above. Wiring 318 becomes... Figure 1 The field lines shown, such as Figure 16BAs shown, it extends along the y-direction. Therefore, in this embodiment, the field line (wiring) 318 is connected to the insulating layer 308, but not to the insulating layer 308. Figure 1 The magnetic metal layer 306 of the magnetic component 12 shown is electrically insulated from it.

[0100] Secondly, such as Figure 17 As shown, an insulating film 320, such as silicon oxide, is formed to cover wiring 318. Subsequently, a mask (not shown) containing a photoresist is formed on the insulating film 320 above the metal film 318. Anisotropic etching, such as RIE (Reactive Ion Etching), is used to etch back the insulating film 320 and insulating film 314, leaving insulating film 320 and insulating film 314 on the upper and side surfaces of the metal film 318. At this time, insulating film 314 remains inside the hole 302 and in areas other than where the magnetic film 312 is formed. Then, after removing the mask, as shown... Figure 19A , 19B As shown, a magnetic film 322, for example, of NiFe, is formed in such a way as to cover a portion of the wiring 318 and the magnetic film 312. Figure 19B Is Figure 19A A top view taken from above.

[0101] By constructing it in this way, a magnetic circuit is formed when a write current flows through the field line 318. This magnetic circuit includes a magnetic film 322, first parts 40a1 and 40a2, and a magnetic film 312. For example, the current flows along... Figure 19A The direction from the front of the paper towards the back ( Figure 19B When the flow is from bottom to top in the field line 318, such as Figure 19A The arrows indicate that the magnetic field lines induced by field line 318 extend along the magnetic film 322 to the right of field line 318. Figure 19A The magnetic film 322 flows over the first portion 40a2 on the right side, the first portion 40a1 on the left side, and the magnetic film 322 above the first portion 40a1 on the left side of the hole 302 shown. Additionally, magnetic field lines also shunt from the first portion 40a2 to the magnetic film 312 and the magnetic film 322 above the magnetic film 312. Furthermore, along the... Figure 19A The depth of the middle of the paper towards the foreground ( Figure 19B When the write current flows through the field lines 318 from top to bottom, the magnetic field lines flow in the opposite direction to the described case. These magnetic field lines... Figure 1 Information (magnetization direction) flows in the region of the second end 12b of the magnetic component 12 (magnetic metal layer 306) shown, and information is written to the second end 12b of the magnetic component 12.

[0102] Secondly, such as Figure 20As shown, an insulating film 324 of, for example, silicon oxide is deposited, and openings communicating with the magnetic metal layer 306 and openings communicating with the magnetic film 322 are formed in the insulating film 324. Thereafter, the openings are embedded with metal, and wirings 326 and 328 are formed. The wiring 326 becomes Figure 1 As shown, the wiring 328 becomes a bit line BL, and the wiring 326 becomes a voltage control line that applies a voltage to the magnetic yoke 40. Figure 2 As shown, the wiring 328 becomes a bit line BL, and the wiring 326 becomes a voltage control line that applies a voltage to the magnetic yoke 40.

[0103] The magnetic memory of the fourth embodiment configured in this way is able to suppress displacement errors as with the first embodiment by providing the non-magnetic conductor portion 54 (non-magnetic metal layer 310) in the cylinder of the magnetic member 12 (magnetic metal layer 306), and supplying a voltage Vc between the magnetic member 12 and the non-magnetic conductor portion 54 at the time of displacement.

[0104] In addition, as with the first embodiment, the magnetic member 12 has the region 12c and the narrowed portion 12d, and thus is able to add strength to the electric field generated by the voltage Vc supplied at the time of displacement, and is able to further suppress displacement errors compared to the case where the narrowed portion is not provided.

[0105] In addition, as with the first embodiment, the magnetic member 12 has a cylindrical shape, and thus is able to efficiently use the electric flux generated in the case where the voltage Vc is supplied, and is able to use a voltage Vc having a smaller absolute value. Thus, even if the magnetic memory is highly integrated, it is able to suppress displacement errors.

[0106] The embodiments of the present application have been described, which are presented as examples, and are not intended to limit the scope of the application. The embodiments can be additionally implemented in various ways, and various omissions, substitutions, and changes can be made within the scope of the gist of the application. The embodiments and changes thereof are included in the scope and gist of the application, and are also included in the scope of the application and equivalents thereof recited in the claims.

Claims

1. A magnetic memory, comprising: comprising: a first wiring and a second wiring; a non-magnetic conductor portion arranged in a first direction; a first magnetic member including a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, and the first magnetic member is arranged so as to extend from the first portion to the second portion in the first direction and surround the non-magnetic conductor portion; a first insulating portion arranged between the non-magnetic conductor portion and the first magnetic member; and a control circuit electrically connected to the non-magnetic conductor portion, the first wiring, and the second wiring; and the control circuit alternately supplies a first voltage and a second voltage between the non-magnetic conductor portion and the first magnetic member during supply of a current between the first wiring and the second wiring, the first voltage making a potential applied to the non-magnetic conductor portion greater than a potential applied to the first magnetic member, and the second voltage making the potential applied to the non-magnetic conductor portion less than the potential applied to the first magnetic member.

2. The magnetic memory of claim 1 wherein further comprising: a third wiring, wherein a second insulating portion is arranged between the third wiring and the second portion of the first magnetic member; and a second magnetic member covering a portion of the third wiring and electrically connected to the non-magnetic conductor portion; the control circuit is electrically connected to the third wiring. further comprising: a third wiring, by making a current flow through the third wiring, a magnetic field is applied to the first magnetic member, 3. The magnetic memory of claim 1 wherein the control circuit is electrically connected to the third wiring. further comprising:

4. The magnetic memory of claim 2 wherein a first magnetic resistance element arranged between the first portion and the first wiring; and the first wiring extends in a second direction intersecting the first direction, the second wiring extends in a third direction intersecting the first direction and the second direction, and the third wiring extends in a plane including the second direction and the third direction.

5. The magnetic memory according to claim 1, wherein: the first magnetic member includes a third portion, a fourth portion, a fifth portion, and a sixth portion, the third portion, the fourth portion, the fifth portion, and the sixth portion are arranged in the first direction between the first portion and the second portion, and respectively surround the non-magnetic conductor portion, the fourth portion is located between the third portion and the sixth portion, the fifth portion is located between the fourth portion and the sixth portion, ​ In a cross section along the first direction and including the first magnetic member, the non-magnetic conductor portion, and the first insulating portion, when a length between the first end portion and the second end portion of the third portion in a direction perpendicular to the first direction is set as a first distance, a length between the third end portion and the fourth end portion of the fourth portion in the direction perpendicular to the first direction is set as a second distance, a length between the fifth end portion and the sixth end portion of the fifth portion in the direction perpendicular to the first direction is set as a third distance, and a length between the seventh end portion and the eighth end portion of the sixth portion in the direction perpendicular to the first direction is set as a fourth distance, the first distance and the third distance are greater than the second distance and the fourth distance.

6. The magnetic memory according to claim 1, wherein: a shape of an outer periphery of the first magnetic member in a cross section perpendicular to the first direction is any one of a circle, an ellipse, or a polygon.

7. A magnetic memory, comprising: includes: a first wiring and a second wiring extending in a first direction; a third wiring extending in a second direction intersecting the first direction; a first non-magnetic conductor portion provided in a third direction intersecting the first direction and the second direction; a second non-magnetic conductor portion provided in the third direction; a first magnetic member including a first portion electrically connected to the first wiring and a second portion electrically connected to the third wiring, and the first magnetic member is configured so as to extend in the third direction from the first portion to the second portion and surround the first non-magnetic conductor portion; a second magnetic member including a third portion electrically connected to the second wiring and a fourth portion electrically connected to the third wiring, and the second magnetic member is configured so as to extend in the third direction from the third portion to the fourth portion and surround the second non-magnetic conductor portion; a first insulating portion provided between the first non-magnetic conductor portion and the first magnetic member; a second insulating portion provided between the second non-magnetic conductor portion and the second magnetic member; a fourth wiring extending in a direction along a plane including the first direction and the second direction, and a magnetic field is applied to the first magnetic member by causing a current to flow through the fourth wiring; a fifth wiring extending in the direction along the plane, and a magnetic field is applied to the second magnetic member by causing a current to flow through the fifth wiring; a sixth wiring electrically connected to the first non-magnetic conductor portion and the second non-magnetic conductor portion, extending in the second direction; a first magnetoresistive element provided between the first portion and the first wiring; a second magnetoresistive element provided between the third portion and the second wiring; and a control circuit electrically connected to the first wiring, the second wiring, the third wiring, the fourth wiring, the fifth wiring, and the sixth wiring. ​ The control circuit supplies a first voltage and a second voltage alternately between the first wiring corresponding to the first magnetic member and the sixth wiring during a period in which the control circuit supplies a current between the first wiring and the third wiring, the first voltage causing a potential applied to the first non-magnetic conductor portion to be greater than a potential applied to the first magnetic member, and the second voltage causing the potential applied to the first non-magnetic conductor portion to be less than the potential applied to the first magnetic member.

8. The magnetic memory of claim 7 wherein Further comprising: a first switching element disposed at least one of between the first magnetoresistive element and the first wiring or between the second portion and the third wiring; and a second switching element disposed at least one of between the second magnetoresistive element and the second wiring or between the fourth portion and the third wiring.

9. The magnetic memory of claim 7 wherein Further comprising: a third magnetic member covering a portion of the fourth wiring, electrically connected to the sixth wiring and the first non-magnetic conductor portion; and a fourth magnetic member covering a portion of the fifth wiring, electrically connected to the sixth wiring and the second non-magnetic conductor portion.

10. The magnetic memory according to claim 7, wherein: the first magnetic member includes a fifth portion, a sixth portion, a seventh portion, and an eighth portion, the fifth portion, the sixth portion, the seventh portion, and the eighth portion are arranged in the third direction between the first portion and the second portion, and respectively surround the first non-magnetic conductor portion, the sixth portion is located between the fifth portion and the eighth portion, the seventh portion is located between the sixth portion and the eighth portion, in a cross section in the third direction and including the first magnetic member, the first non-magnetic conductor portion, and the first insulating portion, when a length between a first end portion and a second end portion of the fifth portion in a direction perpendicular to the third direction is set as a first distance, a length between a third end portion and a fourth end portion of the sixth portion in the direction perpendicular to the third direction is set as a second distance, a length between a fifth end portion and a sixth end portion of the seventh portion in the direction perpendicular to the third direction is set as a third distance, and a length between a seventh end portion and an eighth end portion of the eighth portion in the direction perpendicular to the third direction is set as a fourth distance, the first distance and the third distance are greater than the second distance and the fourth distance.

11. The magnetic memory according to claim 7, wherein: the first magnetic member and the second magnetic member respectively have a shape of a circle, an ellipse, or any one of polygons in a cross section perpendicular to the third direction. Further comprising:

12. A magnetic memory, comprising: a wiring layer extending along a plane including a first direction and a second direction intersecting the first direction; a first wiring and a second wiring extending along the second direction; a first non-magnetic conductor portion provided along a third direction intersecting the first direction and the second direction; a second non-magnetic conductor portion provided along the third direction; and a third non-magnetic conductor portion provided along the third direction. A first magnetic member includes a first portion electrically connected to the wiring layer and a second portion electrically connected to the first wiring, and the first magnetic member is arranged so as to extend from the first portion to the second portion in the third direction and surround the first non-magnetic conductor portion; A second magnetic member includes a third portion electrically connected to the wiring layer and a fourth portion electrically connected to the second wiring, and the second magnetic member is arranged so as to extend from the third portion to the fourth portion in the third direction and surround the second non-magnetic conductor portion; A first insulating portion is arranged between the first non-magnetic conductor portion and the first magnetic member; A second insulating portion is arranged between the second non-magnetic conductor portion and the second magnetic member; A third wiring extends in a direction along a plane including the first direction and the second direction, and a magnetic field is applied to the first magnetic member by causing a current to flow through the third wiring; A fourth wiring extends in a direction along the plane, and a magnetic field is applied to the second magnetic member by causing a current to flow through the fourth wiring; A fifth wiring is electrically connected to the first non-magnetic conductor portion and the second non-magnetic conductor portion and extends in the first direction; A first magnetoresistive element is arranged between the first portion and the wiring layer; A second magnetoresistive element is arranged between the third portion and the wiring layer; and A control circuit is electrically connected to the first wiring, the second wiring, the third wiring, the fourth wiring, and the fifth wiring; and The control circuit supplies a first voltage and a second voltage alternately between the first wiring and the fifth wiring, or between the wiring layer and the fifth wiring, during a period in which a current is supplied between the first wiring corresponding to the first magnetic member and the wiring layer, the first voltage causing a potential applied to the first non-magnetic conductor portion to be greater than a potential applied to the first magnetic member, and the second voltage causing a potential applied to the first non-magnetic conductor portion to be less than a potential applied to the first magnetic member. Further comprising:

13. The magnetic memory of claim 12 wherein A first transistor is arranged between the first wiring and the second portion; A second transistor is arranged between the second wiring and the fourth portion; and A sixth wiring includes a first gate portion of the first transistor and a second gate portion of the second transistor; The control circuit is electrically connected to the sixth wiring. Further comprising:

14. The magnetic memory of claim 12 wherein A third magnetic member covers a portion of the third wiring, is electrically connected to the fifth wiring and the first non-magnetic conductor portion; and A fourth magnetic member covers a portion of the fourth wiring, is electrically connected to the fifth wiring and the second non-magnetic conductor portion. ​ ​

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