Semiconductor structure and method of forming the same
By introducing deep-well protection pillars and well contact layers into the semiconductor structure, combined with current diffusion layers and metal layers, the problems of high surface electric field and low forward current in junction barrier Schottky diodes are solved, thereby improving the reliability and electrical performance of the device.
CN114156336BActive Publication Date: 2026-06-26ALPHA POWER SOLUTIONS SHANGHAI LTD +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ALPHA POWER SOLUTIONS SHANGHAI LTD
- Filing Date
- 2021-12-29
- Publication Date
- 2026-06-26
AI Technical Summary
Technical Problem
Existing junction barrier Schottky diodes suffer from problems such as high surface electric field, low forward current, and insufficient reliability in high voltage devices.
Method used
Introducing deep well protection pillars and well contact layers into semiconductor structures, with the deep well protection pillars surrounding the sidewalls and bottom of the well contact layer, combined with the design of current diffusion layers and metal layers, optimizes the electric field distribution and current diffusion.
Benefits of technology
It reduces the surface electric field of the device, improves the forward current and reliability, enhances the reverse breakdown voltage, and reduces leakage current.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN114156336B_ABST
Abstract
The application provides a semiconductor structure and a forming method thereof. The semiconductor structure comprises: a substrate, the substrate comprising a first epitaxial layer and a second epitaxial layer on the first epitaxial layer; a deep well protection column, which is separated from the surface of the first epitaxial layer and extends into the first epitaxial layer and extends to below the second epitaxial layer in the width direction, and the thickness of the first epitaxial layer between the deep well protection column and the substrate is 6-12 μm; a well contact layer, which has the same doping type as the deep well protection column, extends into the deep well protection column from the surface of the deep well protection column and is surrounded by the sidewall and bottom of the deep well protection column; and a metal layer, which is located on the surface of the well contact layer and the sidewall and surface of the second epitaxial layer. The semiconductor structure and the forming method thereof can reduce the surface electric field of the device, increase the forward current and improve the reliability of the device.
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