A semi-transparent perovskite layer, a semi-transparent perovskite photovoltaic module and a preparation method thereof

Abstract

The present invention provides a semi-transparent perovskite layer, a semi-transparent perovskite photovoltaic module and a preparation method thereof. The preparation method includes: processing a first perovskite precursor layer with a structural pattern, covering and preparing a second perovskite precursor layer. After annealing, the area with the first perovskite precursor layer is converted into a perovskite layer, and the area without the first perovskite precursor layer is a transparent layer, thereby achieving a semi-transparent effect. The semi-transparent perovskite layer of the present invention is prepared by a direct processing method, without using a laser to etch transparency, reducing the equipment cost and simplifying the production process.

Description

Technical Field

[0001] The present invention belongs to the technical field of solar cells, and relates to a semi-transparent perovskite layer, a semi-transparent perovskite photovoltaic module and a preparation method thereof. Background Art

[0002] With the consumption of fossil energy, developing low-carbon and green buildings, optimizing the energy consumption structure of enterprises, and combining photovoltaics with buildings have become the first choice for industrial buildings. Among them, photovoltaic curtain wall glass is one of the products applying solar energy to buildings. Compared with ordinary curtain wall glass, photovoltaic curtain wall glass can generate electricity through solar energy, reduce building energy consumption, and has the beneficial effects of saving energy and protecting the environment. However, compared with ordinary photovoltaic module products, the photovoltaic modules applied to photovoltaic curtain wall glass also need to have the properties of light transmission and adjustable appearance to meet the requirements of building curtain walls for light transmittance and appearance.

[0003] Traditional crystalline silicon modules are difficult to prepare semi-transparent modules. For traditional thin-film modules such as CdTe and CIGS, in order to achieve the semi-transparent effect, the laser scribing method is usually adopted to scribe off part of the functional layer on the module to increase the light transmittance and achieve a semi-transparent module. However, this method has a complex process and the cost of laser equipment is very high. In the perovskite absorber layer of the perovskite module, the color and light transmittance of the thin film can be regulated by regulating the perovskite composition. However, relying solely on the regulation of the perovskite composition, the adjustment range of color and light transmittance is limited.

[0004] Patent CN112382727A discloses a preparation method of a semi-transparent hollow perovskite solar cell, which realizes a semi-transparent perovskite solar cell by laser ablation of a number of semi-hollow holes. This method has relatively high requirements for laser equipment, the price of laser equipment is very expensive, and the process is complex, resulting in a relatively high cost of the module.

[0005] Therefore, how to provide a preparation method of a semi-transparent perovskite module with a simple process and low cost has become an urgent problem to be solved at present. Summary of the Invention

[0006] Aiming at the deficiencies of the existing technology, the purpose of the present invention is to provide a semi-transparent perovskite layer, a semi-transparent perovskite photovoltaic module and a preparation method thereof. By processing a first perovskite precursor layer with a semi-transparent pattern structure, covering and setting a second perovskite precursor layer, after annealing, the area with the first perovskite precursor layer is converted into a perovskite layer, and the area without the first perovskite precursor layer is a transparent layer, thus preparing a semi-transparent perovskite layer, avoiding the problem of subsequent laser etching of the transparent area in the existing technology, reducing the equipment cost, and simplifying the production process.

[0007] To achieve this purpose, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a method for preparing a semi-transparent perovskite layer, and the preparation method includes:

[0009] Processing a first perovskite precursor layer with a pattern structure, covering it to prepare a second perovskite precursor layer, and after annealing, the area with the first perovskite precursor layer is converted into a perovskite layer, and the area without the first perovskite precursor layer is a transparent layer, thereby preparing a semi-transparent perovskite layer.

[0010] The present invention prepares a first perovskite precursor layer with a pattern, further covers the second perovskite precursor layer and then anneals it. The area with the first perovskite precursor layer is converted into a perovskite layer, and the area without the first perovskite precursor layer is a transparent layer, enabling some areas to transmit light, thereby preparing a semi-transparent perovskite layer. The present invention prepares a semi-transparent perovskite layer by a direct processing method, without using a laser to achieve etching transparency. At the same time, the transparent layer blocks between the positive electrode and the negative electrode, avoiding direct contact between the positive and negative electrodes and causing a short circuit. The light transmittance of the present invention can reach 20-80%, meeting the customized adjustment of the light transmittance for different application scenarios of photovoltaic glass curtain walls.

[0011] It should be noted that the pattern form of the perovskite precursor layer in the present invention can be adjusted according to specific light transmittance requirements. For example, the pattern is in the form of a grid or spaced strips, thereby forming a semi-transparent light-transmitting structure. Optionally, by adjusting the interval size between the perovskite precursor layers, the light transmittance can be adjusted.

[0012] It should be noted that as is well known to those skilled in the art, when preparing a semi-transparent perovskite photovoltaic module, laser scribing can be performed on the substrate, perovskite layer and back electrode to block conduction and thus form separate modules.

[0013] As a preferred technical solution of the present invention, the processing method of the pattern includes masking.

[0014] Preferably, the preparation method of the first perovskite precursor layer includes deposition.

[0015] Preferably, the deposition method includes one or a combination of at least two of thermal evaporation, near-space sublimation or vapor transport.

[0016] Preferably, the thickness of the first perovskite precursor layer is 50-300 nm, such as 50 nm, 60 nm, 90 nm, 120 nm, 150 nm, 180 nm, 210 nm, 240 nm, 270 nm or 300 nm.

[0017] As a preferred technical solution of the present invention, the molar ratio of Cs element to Pb element in the first perovskite precursor layer is (0-0.2):1, for example, 0:1, 0.02:1, 0.04:1, 0.06:1, 0.08:1, 0.10:1, 0.12:1, 0.14:1, 0.16:1, 0.18:1 or 0.20:1.

[0018] It should be noted that when the molar ratio of Cs element to Pb element in the present invention is 0:1, that is, the first perovskite precursor layer is one or a combination of at least two of FAPbI3, MAPbI3 or FAMA.

[0019] Preferably, the composition of the first perovskite precursor layer includes PbX2 and CsX, where X is one or a combination of at least two of I, Br or Cl.

[0020] Preferably, the molar ratio of Cl element to I element in the first perovskite precursor layer is (0-0.3):1, for example, 0:1, 0.03:1, 0.06:1, 0.09:1, 0.12:1, 0.15:1, 0.18:1, 0.21:1, 0.24:1, 0.27:1 or 0.30:1.

[0021] As a preferred technical solution of the present invention, the second perovskite precursor layer is obtained by coating with an organic slurry, and the organic slurry includes an organic cation halide and a solvent.

[0022] Preferably, the organic cation halide includes a methylamine halide and / or a formamidine halide.

[0023] Preferably, the methylamine halide includes one or a combination of at least two of methylammonium iodide, methylammonium bromide or methylammonium chloride.

[0024] Preferably, the formamidine halide includes one or a combination of at least two of formamidinium iodide, formamidinium bromide or formamidinium chloride.

[0025] Preferably, the molar ratio of Cl element to I element in the second perovskite precursor layer is (0-0.3):1, for example, 0:1, 0.03:1, 0.06:1, 0.09:1, 0.12:1, 0.15:1, 0.18:1, 0.21:1, 0.24:1, 0.27:1 or 0.30:1.

[0026] As a preferred technical solution of the present invention, the solvent includes isopropyl alcohol.

[0027] Preferably, the solvent further includes a co-solvent.

[0028] Preferably, the volume ratio of the solvent to the auxiliary solvent is 1:(0 to 0.2), such as 1:0, 1:0.02, 1:0.04, 1:0.06, 1:0.08, 1:0.10, 1:0.12, 1:0.14, 1:0.16, 1:0.18 or 1:0.20.

[0029] Preferably, the auxiliary solvent includes one or a combination of at least two of n-butanol, tert-butanol, n-pentanol, DMF or DMSO.

[0030] As a preferred technical solution of the present invention, the annealing temperature is 80 to 200 °C, such as 80 °C, 90 °C, 100 °C, 110 °C, 120 °C, 130 °C, 140 °C, 150 °C, 160 °C, 170 °C, 180 °C, 190 °C or 200 °C.

[0031] By controlling the annealing temperature at 80 to 200 °C, the present invention has the advantages of promoting grain growth and improving the crystallinity and quality of the film layer. If it is lower than 80 °C, there will be a problem of incomplete crystallization; if it is higher than 200 °C, there will be a problem of perovskite decomposition.

[0032] Preferably, the annealing time is 5 to 60 min, such as 5 min, 6 min, 12 min, 18 min, 24 min, 30 min, 36 min, 42 min, 48 min, 54 min or 60 min.

[0033] Preferably, the thickness of the perovskite layer is 100 to 600 nm, such as 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm or 600 nm.

[0034] By regulating the thickness of the perovskite layer and the raw material ratio of the perovskite precursor layer and the organic layer, the present invention realizes a larger range of transparency and color adjustment, and realizes the change of the component color from brown to red to orange.

[0035] In a second aspect, a semi-transparent perovskite layer, characterized in that the semi-transparent perovskite layer includes a perovskite layer arranged in a pattern, a transparent layer is provided in the blank space between the perovskite layers, the perovskite layer and the transparent layer integrally form the semi-transparent perovskite layer, and the semi-transparent perovskite layer is prepared by the preparation method of the semi-transparent perovskite layer described in the first aspect.

[0036] In a third aspect, the present invention provides a semi-transparent perovskite photovoltaic module, which comprises a substrate, a first charge transport layer, a semi-transparent perovskite layer, a second charge transport layer and a back electrode stacked in sequence, and the semi-transparent perovskite layer is the semi-transparent perovskite layer described in the second aspect.

[0037] It should be noted that in the present invention, both the transparent layer and the perovskite layer in the semi-transparent perovskite layer are in contact with the first charge transport layer and the second charge transport layer, that is, the arrangement of the perovskite layer is arranged at intervals on the surface of the first charge transport layer, rather than being arranged at intervals in sequence along the stacking direction.

[0038] In a fourth aspect, the present invention provides a method for preparing the semi-transparent perovskite photovoltaic module described in the third aspect, and the method for preparing the semi-transparent perovskite photovoltaic module comprises:

[0039] (I) preparing a first charge transport layer on the substrate, and arranging first perovskite precursor layers at intervals according to a pattern process on the first charge transport layer;

[0040] (II) covering and preparing a second perovskite precursor layer on one side of the substrate having the perovskite precursor layer, and after annealing, the area with the first perovskite precursor layer is converted into a perovskite layer, and the area without the first perovskite precursor layer is a transparent layer, so as to prepare a semi-transparent perovskite layer;

[0041] (III) sequentially preparing a second charge transport layer and a back electrode on one side of the substrate having the perovskite layer, so as to prepare the semi-transparent perovskite photovoltaic module.

[0042] As a preferred technical solution of the present invention, the material of the substrate includes FTO and / or ITO.

[0043] Preferably, the first charge transport layer is an electron transport layer, the second charge transport layer is a hole transport layer, the material of the electron transport layer includes one or at least two combinations of TiO2, SnO2 or Nb2O5, and the material of the hole transport layer includes one or at least two combinations of spiro-OMeTAD, PTAA, CuSCN, CuI or CuPc.

[0044] Preferably, the first charge transport layer is a hole transport layer, the second charge transport layer is an electron transport layer, the material of the hole transport layer includes one or at least two combinations of NiO x , PTAA, PEDOT:PSS or poly-TPD, and the material of the electron transport layer includes one or at least two combinations of SnO2, Nb2O5, C60, BCP, PCBM.

[0045] Preferably, the preparation method of the first charge transport layer includes one or a combination of at least two of magnetron sputtering, ALD, thermal evaporation, vapor transport, near-space sublimation, slot coating, blade coating, spraying, or inkjet printing.

[0046] Preferably, the preparation method of the second charge transport layer includes one or a combination of at least two of magnetron sputtering, ALD, thermal evaporation, vapor transport, near-space sublimation, slot coating, blade coating, spraying, or inkjet printing.

[0047] Exemplarily, a preparation method of the above photovoltaic module with a semi-transparent perovskite layer is provided. The preparation method specifically includes the following steps:

[0048] (Ⅰ) Prepare a first charge transport layer on a substrate, and prepare a patterned first perovskite precursor layer with a thickness of 50 - 300 nm on the first charge transport layer by means of masking and deposition. The molar ratio of Cl element to I element in the first perovskite precursor layer is (0 - 0.3):1;

[0049] (Ⅱ) Coat an organic slurry on the surface of the first perovskite precursor layer to prepare a second perovskite precursor layer. The molar ratio of Cl element to I element in the second perovskite precursor layer is (0 - 0.3):1. After annealing at 80 - 200 °C for 5 - 60 min, the area with the first perovskite precursor layer is converted into a perovskite layer, and the area without the first perovskite precursor layer is a transparent layer. The thickness of the perovskite layer is 100 - 600 nm, and a semi-transparent perovskite layer is prepared;

[0050] (Ⅲ) Sequentially prepare a second charge transport layer and a back electrode on one side of the substrate with the perovskite layer, and the above semi-transparent perovskite photovoltaic module is prepared.

[0051] The numerical ranges described in the present invention include not only the point values exemplified above, but also any point values between the above numerical ranges not exemplified. Due to space limitations and for the sake of brevity, the specific point values included in the ranges of the present invention are not exhaustively listed herein.

[0052] Compared with the prior art, the beneficial effects of the present invention are:

[0053] The present invention prepares a first perovskite precursor layer with a pattern, and further covers and anneals a second perovskite precursor layer. The area with the first perovskite precursor layer is converted into a perovskite layer, and the area without the first perovskite precursor layer is a transparent layer, enabling light transmission in some areas, thereby preparing a semi-transparent perovskite layer. The present invention prepares the semi-transparent perovskite layer by a direct processing method, without using a laser to etch transparency. At the same time, the transparent layer is blocked between the positive electrode and the negative electrode, avoiding direct contact between the positive and negative electrodes and causing a short circuit. The light transmittance of the present invention can reach 20-80%, meeting the customized adjustment of the light transmittance for different application scenarios of photovoltaic glass curtain walls. Brief Description of the Drawings

[0054] Figure 1 It is a schematic plan view of the preparation process flow of the semi-transparent perovskite layer provided in Embodiments 1-5 of the present invention;

[0055] Figure 2 It is a schematic cross-sectional view of the preparation process flow of the semi-transparent perovskite photovoltaic module provided in Embodiments 1-5 of the present invention;

[0056] Figure 3 It is a perovskite photovoltaic module without a semi-transparent perovskite layer in the prior art;

[0057] Figure 4 It is a semi-transparent perovskite photovoltaic module prepared in Embodiments 1-5 of the present invention.

[0058] Among them, 1 - the first perovskite precursor layer; 2 - the second perovskite precursor layer; 3 - the perovskite layer; 4 - the substrate; 5 - the first charge transport layer; 6 - the second charge transport layer; 7 - the back electrode. Detailed Embodiments

[0059] It should be understood that in the description of the present invention, the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "a plurality" is two or more.

[0060] It should be noted that in the description of the present invention, unless otherwise clearly specified and defined, the terms "arranged", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood through specific situations.

[0061] The technical solutions of the present invention will be further described below through specific embodiments.

[0062] Example 1

[0063] This example provides a method for preparing a semi-transparent perovskite photovoltaic module, as Figure 1 and Figure 2 shown. The specific preparation method includes the following steps:

[0064] (Ⅰ) Prepare a first charge transport layer 5 made of TiO2 on the FTO substrate 4, and prepare a first perovskite precursor layer 1 with a grid structure on the first charge transport layer 5 by means of masking and deposition. The thickness is 175 nm. The composition of the first perovskite precursor layer 1 includes PbI2 and CsBr. The molar ratio of Cs element to Pb element is 0.2:1, and the molar ratio of Br element to I element is 0.2:1;

[0065] (Ⅱ) Coat an organic slurry on the first perovskite precursor layer 1 to prepare a second perovskite precursor layer 2. The organic slurry includes chloromethylamine, iodomethylformamidine, and isopropanol. The molar ratio of methylamine to formamidine in the second perovskite precursor layer 2 is 0.1:1, and the molar ratio of Cl element to I element is 0.1:1. After annealing at 140 °C for 30 min, a perovskite layer 3 with a thickness of 350 nm is formed in the area with the first perovskite precursor layer 1, and a transparent layer is formed in the area without the first perovskite precursor layer 1, thus obtaining a semi-transparent perovskite layer;

[0066] (Ⅲ) Sequentially prepare a second charge transport layer 6 made of PTAA and a back electrode 7 on one side of the substrate 4 with the perovskite layer 3, thus obtaining the semi-transparent perovskite photovoltaic module as Figure 4 shown.

[0067] Example 2

[0068] This example provides a method for preparing a semi-transparent perovskite photovoltaic module, as Figure 1 and Figure 2 shown. The specific preparation method includes the following steps:

[0069] (Ⅰ) Prepare a first charge transport layer 5 made of SnO2 on an ITO substrate 4. Prepare a patterned first perovskite precursor layer 1 with a thickness of 50 nm on the first charge transport layer 5 by means of masking and deposition. The composition of the first perovskite precursor layer 1 includes PbI2, CsCl, and PbBr2. The molar ratio of Cs element to Pb element is 0.1:1, the molar ratio of Br element to I element is 1:1, and the molar ratio of Cl element to I element is 0.1:1;

[0070] (Ⅱ) Coat an organic slurry on the first perovskite precursor layer 1 to prepare a second perovskite precursor layer 2. The organic slurry includes methylammonium bromide, formamidinium iodide, isopropanol, and tert-butanol. The volume ratio of isopropanol to tert-butanol is 1:0.1. The molar ratio of methylamine to formamidine in the second perovskite precursor layer 2 is 0.05:1, and the molar ratio of Br element to I element is 0.05:1. After annealing at 80 °C for 60 min, a perovskite layer 3 with a thickness of 600 nm is formed in the area with the first perovskite precursor layer 1, and the area without the first perovskite precursor layer 1 is a transparent layer, obtaining a semi-transparent perovskite layer;

[0071] (Ⅲ) Sequentially prepare a second charge transport layer 6 made of spiro-OMeTAD and a back electrode 7 on the side of the substrate 4 with the perovskite layer 3, obtaining a semi-transparent perovskite photovoltaic module as shown in Figure 4 Figure.

[0072] Example 3

[0073] This example provides a method for preparing a semi-transparent perovskite photovoltaic module. As shown in Figure 1 and Figure 2 Figure, the preparation method specifically includes the following steps:

[0074] (Ⅰ) Prepare a first charge transport layer 5 made of Nb2O5 on an FTO substrate 4. Prepare a patterned first perovskite precursor layer 1 with a thickness of 300 nm on the first charge transport layer 5 by means of masking and deposition. The composition of the first perovskite precursor layer 1 includes PbI2 and CsCl. The molar ratio of Cs element to Pb element is 0.05:1, and the molar ratio of Cl element to I element is 0.025:1;

[0075] (II) Coating an organic slurry on the first perovskite precursor layer 1 to prepare the second perovskite precursor layer 2. The organic slurry includes chloromethylamine, bromomethylamine, iodomethylformamidinium, isopropanol and tert-butanol. The volume ratio of isopropanol to tert-butanol is 1:0.2. The molar ratio of methylamine to formamidinium in the second perovskite precursor layer 2 is 0.2:1, the molar ratio of Br element to I element is 0.1:1, and the molar ratio of Cl element to I element is 0.1:1. After annealing at 200 °C for 5 min, a perovskite layer 3 with a thickness of 100 nm is formed in the area with the first perovskite precursor layer 1, and the area without the first perovskite precursor layer 1 is a transparent layer, thus obtaining a semi-transparent perovskite layer;

[0076] (III) Sequentially preparing a second charge transport layer 6 made of PCBM and a back electrode 7 on one side of the substrate 4 with the perovskite layer 3, thus obtaining the semi-transparent perovskite photovoltaic module as Figure 4 shown.

[0077] Example 4

[0078] This example provides a preparation method of a semi-transparent perovskite photovoltaic module. As Figure 1 and Figure 2 shown, the specific preparation method includes the following steps:

[0079] (I) Preparing a first charge transport layer 5 made of Nb2O5 on the ITO substrate 4, and preparing a patterned first perovskite precursor layer 1 with a thickness of 120 nm on the first charge transport layer 5 by means of masking and deposition. The composition of the first perovskite precursor layer 1 includes PbI2;

[0080] (II) Coating an organic slurry on the first perovskite precursor layer 1 to prepare the second perovskite precursor layer 2. The organic slurry includes iodomethylformamidinium and isopropanol. After annealing at 100 °C for 40 min, a perovskite layer 3 with a thickness of 200 nm is formed in the area with the first perovskite precursor layer 1, and the area without the first perovskite precursor layer 1 is a transparent layer, thus obtaining a semi-transparent perovskite layer;

[0081] (III) Sequentially preparing a second charge transport layer 6 made of PCBM and a back electrode 7 on one side of the substrate 4 with the perovskite layer 3, thus obtaining the semi-transparent perovskite photovoltaic module as Figure 4 shown.

[0082] Example 5

[0083] This example provides a preparation method of a semi-transparent perovskite photovoltaic module. As Figure 1 and Figure 2 shown, the specific preparation method includes the following steps:

[0084] (I) Prepare a first charge transport layer 5 made of Nb2O5 on an FTO substrate 4. Prepare a patterned first perovskite precursor layer 1 with a thickness of 180 nm on the first charge transport layer 5 by means of masking and deposition. The composition of the first perovskite precursor layer 1 includes PbI2, PbBr, and CsCl. The molar ratio of Cs element to Pb element is 0.2:1, and the molar ratio of Cl element to I element is 0.3:1.

[0085] (II) Coat an organic slurry on the first perovskite precursor layer 1 to prepare a second perovskite precursor layer 2. The organic slurry includes chloromethylamine isopropanol and n-pentanol. The volume ratio of isopropanol to n-pentanol is 1:0.15. After annealing at 160 °C for 10 min, a perovskite layer 3 with a thickness of 400 nm is formed in the area with the first perovskite precursor layer 1, and the area without the first perovskite precursor layer 1 is a transparent layer, obtaining a semi-transparent perovskite layer.

[0086] (III) Sequentially prepare a second charge transport layer 6 made of PCBM and a back electrode 7 on the side of the substrate 4 with the perovskite layer 3, obtaining the semi-transparent perovskite photovoltaic module as shown in Figure 4 .

[0087] Through the above embodiments, compared with the prior art perovskite battery components without a semi-transparent structure (as shown in Figure 3 ), the present invention prepares a patterned perovskite precursor layer 1, and further anneals after covering the second perovskite precursor layer 2. The perovskite precursor layer 1 and the second perovskite precursor layer 2 covering it form a perovskite layer 3. The position of the second perovskite precursor layer 2 that does not cover the perovskite layer 3 remains the transparent second perovskite precursor layer 2, making part of the area light-transmissive, thus obtaining a semi-transparent perovskite layer. The present invention prepares a semi-transparent perovskite layer by a direct processing method, without using laser to etch transparency. At the same time, the second perovskite precursor layer 2 blocks between the positive electrode and the negative electrode, avoiding short circuit caused by direct contact between the positive and negative electrodes. The light transmittance of the present invention can reach 20-80%, meeting the customized adjustment of the light transmittance for different application scenarios of photovoltaic glass curtain walls.

[0088] The applicant declares that the above description is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention fall within the protection scope and the disclosure scope of the present invention.

Claims

1. A method for preparing a semi-transparent perovskite layer, characterized in that, The described preparation method includes: Processing a first perovskite precursor layer with a pattern structure, covering it to prepare a second perovskite precursor layer. After annealing, the area with the first perovskite precursor layer is converted into a perovskite layer, and the area without the first perovskite precursor layer is a transparent layer, thus obtaining a semi-transparent perovskite layer; The composition of the first perovskite precursor layer includes PbX2 and CsX, where X is one or a combination of at least two of I, Br, or Cl; The second perovskite precursor layer is obtained by coating with an organic slurry, and the organic slurry includes an organic cation halide and a solvent; the organic cation halide includes a methylamine halide and / or a formamidine halide.

2. The preparation method according to claim 1, characterized in that, The processing method of the pattern includes masking.

3. The preparation method according to claim 1, characterized in that, The preparation method of the first perovskite precursor layer includes deposition.

4. The preparation method according to claim 3, characterized in that, The deposition method includes one or a combination of at least two of thermal evaporation, near-space sublimation, or vapor transport.

5. The preparation method according to claim 1, characterized in that, The thickness of the first perovskite precursor layer is 50 - 300 nm.

6. The preparation method according to claim 1, characterized in that, The molar ratio of Cs element to Pb element in the first perovskite precursor layer is (0 - 0.2):

1.

7. The preparation method according to claim 1, characterized in that The molar ratio of Cl element to I element in the first perovskite precursor layer is (0 - 0.3):

1.

8. The preparation method according to claim 1, wherein, The methylamine halide includes one or a combination of at least two of methylammonium iodide, methylammonium bromide, or methylammonium chloride.

9. The preparation method according to claim 8, characterized in that, The formamidine halide includes one or a combination of at least two of formamidinium iodide, formamidinium bromide, or formamidinium chloride.

10. The preparation method according to claim 9, characterized in that, The molar ratio of Cl element to I element in the second perovskite precursor layer is (0 - 0.3):

1.

11. According to the preparation method described in claim 1, characterized in that, The solvent includes isopropyl alcohol.

12. The preparation method according to claim 1, wherein The solvent also includes a co-solvent.

13. The preparation method according to claim 12, wherein The volume ratio of the solvent to the co-solvent is 1:(0 - 0.2).

14. The preparation method according to claim 12, wherein The co-solvent includes one or a combination of at least two of n-butanol, tert-butanol, n-pentanol, DMF, or DMSO.

15. The preparation method according to claim 1, characterized in that, The annealing temperature is 80 - 200 °C.

16. The preparation method according to claim 1, characterized in that, The annealing time is 5 - 60 min.

17. The preparation method according to claim 1, characterized in that, The thickness of the perovskite layer is 100 - 600 nm.

18. A semi-transparent perovskite layer, characterized in that, The semi-transparent perovskite layer includes perovskite layers arranged in a pattern, with transparent layers provided at the intervals between the perovskite layers. The perovskite layers and the transparent layers integrally form the semi-transparent perovskite layer, and the semi-transparent perovskite layer is obtained by the preparation method of the semi-transparent perovskite layer according to any one of claims 1 - 17.

19. A semi-transparent perovskite photovoltaic module, characterized in that, The semi-transparent perovskite photovoltaic module includes a substrate, a first charge transport layer, a semi-transparent perovskite layer, a second charge transport layer, and a back electrode stacked in sequence, and the semi-transparent perovskite layer is the semi-transparent perovskite layer according to claim 18.

20. A method for preparing the semi-transparent perovskite photovoltaic module according to claim 19, characterized in that, The preparation method of the semi-transparent perovskite photovoltaic module includes: (Ⅰ) Preparing a first charge transport layer on the substrate, and processing and arranging the first perovskite precursor layer at intervals on the first charge transport layer according to a pattern; (Ⅱ) Covering and preparing a second perovskite precursor layer on the side of the substrate with the perovskite precursor layer. After annealing, the area with the first perovskite precursor layer is converted into a perovskite layer, and the area without the first perovskite precursor layer is a transparent layer, thus obtaining a semi-transparent perovskite layer; (Ⅲ) A second charge transport layer and a back electrode are sequentially prepared on the side of the substrate with the perovskite layer, and the semi-transparent perovskite photovoltaic module is obtained.

21. The preparation method of the semi-transparent perovskite photovoltaic module according to claim 20, wherein, The material of the substrate includes FTO and / or ITO.

22. The preparation method of the semi-transparent perovskite photovoltaic module according to claim 20, characterized in that, The first charge transport layer is an electron transport layer, and the second charge transport layer is a hole transport layer. The material of the electron transport layer includes one or a combination of at least two of TiO2, SnO2, or Nb2O5, and the material of the hole transport layer includes one or a combination of at least two of spiro-OMeTAD, PTAA, CuSCN, CuI, or CuPc.

23. The preparation method of the semi-transparent perovskite photovoltaic module according to claim 20, wherein, The first charge transport layer is a hole transport layer, the second charge transport layer is an electron transport layer, and the material of the hole transport layer includes NiO x , one or a combination of at least two of PTAA, PEDOT:PSS or poly-TPD, and the material of the electron transport layer includes one or a combination of at least two of C60, BCP, PCBM, SnO2 or Nb2O5.

24. The method for preparing a semi-transparent perovskite photovoltaic module according to claim 20, wherein, The preparation method of the first charge transport layer includes one or a combination of at least two of magnetron sputtering, ALD, thermal evaporation, vapor transport, near-space sublimation, slot coating, blade coating, or spraying.

25. The method for preparing a semi-transparent perovskite photovoltaic module according to claim 20, wherein The preparation method of the second charge transport layer includes one or a combination of at least two of magnetron sputtering, ALD, thermal evaporation, vapor transport, near-space sublimation, slot coating, blade coating, or spraying.

Images