Display Panel, Display Device, and Monitoring Method for Thin Film Transistor

Abstract

The present application provides a display panel, a display device, and a monitoring method for thin film transistors. The display panel includes: a first conductive part and a second conductive part, a first monitoring thin film transistor and a second monitoring thin film transistor; the first conductive part is connected to the gate opening signal output terminal, and the second conductive part is connected to the gate closing signal output terminal; the opening voltage of the first monitoring thin film transistor is the same as the opening voltage of the first thin film transistor to be monitored, and the closing voltage of the second monitoring thin film transistor is the same as the closing voltage of the second thin film transistor to be monitored; the gate of the first monitoring thin film transistor is connected to the first conductive part, the source is connected to the first data line, and the drain is connected to the control chip bound to the display panel, and is used to output an opening feedback voltage to the control chip; the gate of the second monitoring thin film transistor is connected to the second conductive part, the source is connected to the second data line, and the drain is connected to the control chip, and is used to output a closing feedback voltage to the control chip.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology. Specifically, this application relates to a display panel, a display device, and a monitoring method for thin film transistors. Background Art

[0002] A TFT (Thin Film Transistor) is an important device in display panel technology. It can actively control each independent pixel on the screen, thereby accurately achieving different colors and different gray levels required for display, and plays a very crucial role in the display panel. The TFT characteristics, as the key parameters to measure the performance of a TFT, are important inspection indicators for TFT devices. Among them, Ion (representing the quality of the turn-on current of the TFT, the higher it is, the better the turn-on characteristics of the TFT) and Ioff (representing the magnitude of the leakage current of the TFT, the lower it is, the better the turn-off characteristics of the TFT) are the two most important parameters in the TFT characteristics.

[0003] However, due to reasons such as process fluctuations, during actual production and use, some display panels may have poor TFT characteristics, the TFT characteristic curve may shift to the left or to the right, etc., resulting in problems such as crosstalk and startup anomalies. Summary of the Invention

[0004] In view of the shortcomings of the existing methods, this application proposes a display panel, a display device, and a monitoring method for thin film transistors to solve the technical problems of crosstalk and startup anomalies in the panel caused by the shift of TFT characteristics in the prior art.

[0005] In a first aspect, an embodiment of this application provides a display panel, including a plurality of thin film transistors, a conductive part and a monitoring thin film transistor located in the border area of the display panel; the conductive part includes a first conductive part and / or a second conductive part, and the monitoring thin film transistor includes a first monitoring thin film transistor and / or a second monitoring thin film transistor; the first conductive part is connected to a gate turn-on signal output terminal, and the second conductive part is connected to a gate turn-off signal output terminal;

[0006] The turn-on voltage of the first monitoring thin film transistor is the same as the turn-on voltage of a first thin film transistor to be monitored among the plurality of thin film transistors, and the turn-off voltage of the second monitoring thin film transistor is the same as the turn-off voltage of a second thin film transistor to be monitored among the plurality of thin film transistors;

[0007] The gate of the first monitoring thin-film transistor is connected to the first conductive part, the source is connected to the first data line, and the drain is connected to the control chip bound to the display panel, and is configured to output a turn-on feedback voltage to the control chip; the gate of the second monitoring thin-film transistor is connected to the second conductive part, the source is connected to the second data line, and the drain is connected to the control chip, and is configured to output a turn-off feedback voltage to the control chip;

[0008] The first data line is the data line connected to the source of the first thin-film transistor to be monitored, and the second data line is the data line connected to the source of the second thin-film transistor to be monitored.

[0009] Optionally, the turn-off voltage of the first monitoring thin-film transistor is the same as the turn-off voltage of the first thin-film transistor to be monitored;

[0010] The turn-on voltage of the second monitoring thin-film transistor is the same as the turn-on voltage of the second thin-film transistor to be monitored.

[0011] Optionally, if the first thin-film transistor to be monitored and the second thin-film transistor to be monitored are the same thin-film transistor; the first data line and the second data line are data lines at the same position in the display panel, and the same data line is respectively connected to the source of the first monitoring thin-film transistor and the source of the second monitoring thin-film transistor.

[0012] Optionally, the first monitoring thin-film transistor includes a first active layer, and the second monitoring thin-film transistor includes a second active layer;

[0013] The shape of the first active layer is the same as the shape of the active layer included in the first thin-film transistor to be monitored, and the shape of the second active layer is the same as the shape of the active layer included in the second thin-film transistor to be monitored;

[0014] The material of the first active layer is the same as the material of the active layer included in the first thin-film transistor to be monitored, and the material of the second active layer is the same as the material of the active layer included in the second thin-film transistor to be monitored.

[0015] Optionally, the first monitoring thin-film transistor includes a first gate and a first source-drain, and the second monitoring thin-film transistor includes a second gate and a second source-drain; the first gate, the second gate, the gate included in the first thin-film transistor to be monitored, and the gate included in the second thin-film transistor to be monitored are arranged in the same layer;

[0016] The first source-drain, the second source-drain, the source-drain included in the first thin film transistor to be monitored, and the source-drain included in the second thin film transistor to be monitored are arranged in the same layer; the first active layer, the second active layer, the active layer included in the first thin film transistor to be monitored, and the active layer included in the second thin film transistor to be monitored are arranged in the same layer.

[0017] In a second aspect, the present application provides a display device, including the display panel, a control chip, and a power management chip described in the first aspect;

[0018] The power management chip and the control chip are bonded to the bonding area of the display panel, and the control chip is respectively connected to the power management chip, the drain of the first monitoring thin film transistor, and the drain of the second thin film transistor;

[0019] The control chip is configured to receive the turn-on feedback voltage, compare the turn-on feedback voltage with a reference turn-on voltage, and determine whether the turn-on voltage characteristic of the thin film transistor to be monitored is qualified according to the comparison result; and / or,

[0020] The control chip is configured to receive the turn-off feedback voltage, compare the turn-off feedback voltage with a reference turn-off voltage, and determine whether the turn-off voltage characteristic of the thin film transistor to be monitored is qualified according to the comparison result.

[0021] Optionally, the control chip includes a turn-on voltage amplification comparator and a turn-off voltage amplification comparator; a first input terminal of the turn-on voltage amplification comparator is configured to receive the reference turn-on voltage, and a second input terminal of the turn-on voltage amplification comparator is connected to the drain of the first monitoring thin film transistor, and is configured to amplify the received turn-on feedback voltage and compare the magnitudes of the turn-on feedback voltage and the reference turn-on voltage;

[0022] A first input terminal of the turn-off voltage amplification comparator is configured to receive the reference turn-off voltage, and a second input terminal of the turn-off voltage amplification comparator is connected to the drain of the second monitoring thin film transistor, and is configured to amplify the received turn-off feedback voltage and compare the magnitudes of the turn-off feedback voltage and the reference turn-off voltage.

[0023] In a third aspect, the present application provides a method for monitoring a thin film transistor, which is used for the display device described in the second aspect, and includes: the control chip receives the turn-on feedback voltage output by the first monitoring thin film transistor, compares the turn-on feedback voltage with a reference turn-on voltage, and determines whether the turn-on voltage characteristic of the thin film transistor to be monitored is qualified according to the comparison result;

[0024] And / or, the control chip receives the turn-off feedback voltage output by the second monitoring thin-film transistor, compares the turn-off feedback voltage with a reference turn-off voltage, and determines whether the turn-off voltage characteristic of the thin-film transistor to be monitored is qualified according to the comparison result.

[0025] Optionally, determining whether the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified according to the comparison result includes: comparing the turn-on feedback voltage with a reference turn-on voltage; if the turn-on feedback voltage is not less than the reference turn-on voltage, outputting a first gate turn-on voltage adjustment signal to the power management chip, and the power management chip does not perform voltage adjustment, determining that the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified;

[0026] if the turn-on feedback voltage is less than the reference turn-on voltage, outputting a second gate turn-on voltage adjustment signal to the power management chip, and the power management chip controls the output voltage value of the gate turn-on signal output terminal to increase or decrease according to the received second gate turn-on voltage adjustment signal to adjust the gate turn-on voltage of the first monitoring thin-film transistor, and the control chip determines whether the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified according to the adjustment result.

[0027] Optionally, the control chip determines whether the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified according to the adjustment result, including: when the power management chip receives the second gate turn-on voltage adjustment signal, controlling the output voltage value of the gate turn-on signal output terminal to increase or decrease according to a set step size; if the output voltage value after increasing or decreasing again exceeds the range of the power management chip, sending a stop voltage signal to the control chip;

[0028] before the control chip receives the stop voltage signal, if the turn-on feedback voltage is not less than the reference turn-on voltage, determining that the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified; after the control chip receives the stop voltage signal, determining that the turn-on voltage characteristic of the thin-film transistor to be monitored is unqualified.

[0029] Optionally, determining whether the turn-off voltage characteristic of the thin-film transistor to be monitored is qualified according to the comparison result includes:

[0030] comparing the turn-off feedback voltage with the reference turn-off voltage; if the turn-off feedback voltage is not greater than the reference turn-off voltage, outputting a first gate turn-off voltage adjustment signal to the power management chip, and the power management chip does not perform voltage adjustment, determining that the turn-off voltage characteristic of the thin-film transistor to be monitored is qualified;

[0031] If the turn-off feedback voltage is greater than the reference turn-off voltage, a second gate turn-off voltage adjustment signal is output to the power management chip. The power management chip controls the voltage value output by the gate turn-off signal output terminal to increase or decrease according to the received second gate turn-off voltage adjustment signal, so as to adjust the gate turn-off voltage of the second monitoring thin film transistor. The control chip determines whether the turn-off voltage characteristic of the thin film transistor to be monitored is qualified according to the adjustment result.

[0032] Optionally, the control chip determines whether the turn-off voltage characteristic of the thin film transistor to be monitored is qualified according to the adjustment result, including:

[0033] When the power management chip receives the second gate turn-off voltage adjustment signal, it controls the voltage value output by the gate turn-off signal output terminal to increase or decrease according to a set step. If the output voltage value after increasing or decreasing again exceeds the range of the power management chip, a stop voltage signal is sent to the control chip;

[0034] Before receiving the stop voltage signal, if the turn-off feedback voltage is not greater than the reference turn-off voltage, the control chip determines that the turn-off voltage characteristic of the thin film transistor to be monitored is qualified. After receiving the stop voltage signal, the control chip determines that the turn-off voltage characteristic of the thin film transistor to be monitored is unqualified.

[0035] The beneficial technical effects brought by the technical solution provided by the embodiment of the present application include:

[0036] The display panel provided by the embodiment of the present application sets the turn-on voltage of the first monitoring thin film transistor to be the same as the turn-on voltage of the first thin film transistor to be monitored, and the turn-off voltage of the second monitoring thin film transistor to be the same as the turn-off voltage of the second thin film transistor to be monitored; sets the gate of the first monitoring thin film transistor to be connected to the first conductive part, the source to be connected to the first data line, and the drain to be connected to the control chip bound to the display panel; sets the gate of the second monitoring thin film transistor to be connected to the second conductive part, the source to be connected to the second data line, and the drain to be connected to the control chip. Since the first conductive part is connected to the gate turn-on signal output terminal and the second conductive part is connected to the gate turn-off signal output terminal, after the display panel is bound to external devices such as the control chip, the first monitoring thin film transistor outputs a turn-on feedback voltage to the control chip, and the second monitoring thin film transistor outputs a turn-off feedback voltage to the control chip. After forming a display device, the control chip can receive the turn-on feedback voltage and the turn-off feedback voltage to determine whether it is necessary to adjust the gate turn-on voltage and the gate turn-off voltage to determine whether the first thin film transistor to be monitored and / or the second thin film transistor to be monitored is qualified, and then determine whether the display panel is qualified. While avoiding the outflow of unqualified products, it can maximally avoid the loss of unqualified products caused by process environment fluctuations, improve the product yield, and reduce the process preparation difficulty.

[0037] The above description is only an overview of the technical solution of the embodiment of the present application. In order to be able to understand the technical means of the embodiment of the present application more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features and advantages of the embodiment of the present application more obvious and understandable, the following specifically describes the specific implementation manners of the embodiment of the present application. Brief Description of the Drawings

[0038] The above and / or additional aspects and advantages of the present application will become obvious and easy to understand from the following description of the embodiments in conjunction with the drawings, wherein:

[0039] Figure 1 is a characteristic curve diagram of a thin film transistor;

[0040] Figure 2 is a structural diagram of a display panel provided by an embodiment of the present application;

[0041] Figure 3 is another structural diagram of a display panel provided by an embodiment of the present application;

[0042] Figure 4 is another structural diagram of a display panel provided by an embodiment of the present application;

[0043] Figure 5 is a structural diagram of some devices of a display panel provided by an embodiment of the present application;

[0044] Figure 6 is a structural diagram of a display device provided by an embodiment of the present application;

[0045] Figure 7 is a structural diagram of a monitoring device of a display device provided by an embodiment of the present application;

[0046] Figure 8 is a structural diagram of some monitoring devices of a display device provided by an embodiment of the present application;

[0047] Figure 9 is a structural diagram of some monitoring devices of a display device provided by an embodiment of the present application;

[0048] Figure 10 is a flowchart of a monitoring method for a thin film transistor provided by an embodiment of the present application;

[0049] The introduction of the reference numerals is as follows:

[0050] 100 - Display panel; 111 - First thin - film transistor to be monitored; 112 - Second thin - film transistor to be monitored; 121 - First conductive part; 122 - Second conductive part; 131 - First monitoring thin - film transistor; 132 - Second monitoring thin - film transistor; 1311 - First first monitoring thin - film transistor; 1312 - Second first monitoring thin - film transistor; 1321 - First second monitoring thin - film transistor; 1322 - Second second monitoring thin - film transistor; 141 - Gate via hole; 142 - SD via hole; 151 - SD1 test pattern; 152 - SD2 test pattern; 200 - Display device; 210 - Control chip; 220 - Power management chip, 211 - Turn - on voltage amplifier comparator; 2111 - Positive turn - on voltage amplifier comparator; 2112 - Negative turn - on voltage amplifier comparator; 212 - Turn - off voltage amplifier comparator; 2121 - Positive turn - off voltage amplifier comparator; 2122 - Negative turn - off voltage amplifier comparator. Detailed implementation manners

[0051] The present application will be described in detail below. Examples of embodiments of the present application are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar components or components with the same or similar functions throughout. In addition, if the detailed description of the known technology is unnecessary for showing the features of the present application, it will be omitted. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and should not be construed as a limitation of the present application.

[0052] Those skilled in the art of the present technology can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as the general understanding of those of ordinary skill in the art to which the present application belongs. It should also be understood that terms such as those defined in a general dictionary should be understood to have a meaning consistent with the meaning in the context of the prior art, and will not be interpreted with an idealized or overly formal meaning unless specifically defined as here.

[0053] Those skilled in the art of the present technology can understand that, unless specifically stated, the singular forms "a", "an", "the" and "said" used herein may also include the plural forms. It should be further understood that the term "comprising" used in the specification of the present application means the presence of the described features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or their groups. It should be understood that when we say that an element is "connected" to another element, it can be directly connected to other elements, or there may also be intermediate elements. In addition, the "connection" used here may include wireless connection. The phrase "and / or" used here includes all or any unit and all combinations of one or more related listed items.

[0054] Due to process fluctuations and environmental impacts, the TFT characteristic curves will show different degrees of offset. For example Figure 1 As shown, curve B is the TFT characteristic curve under normal conditions. When the TFT characteristic curve shifts, it will affect the Ion and Ioff of the TFT. For example: when the characteristic curve shifts to the left (such as curve A), the Ioff of the TFTs in the panel increases, and too large Ioff will cause problems such as vertical crosstalk and flickering in the panel; when the characteristic curve shifts to the right (such as curve C), the Ion of the TFTs in the panel decreases, and insufficient Ion will lead to poor low-temperature startup or even poor room-temperature startup. These two abnormalities will cause different degrees of display abnormalities in the display panel.

[0055] To solve the above problems, scholars have conducted a lot of research. Among them, optimizing and stabilizing the process is the main direction (such as increasing the width-to-length ratio (W / L) of the TFT, improving process conditions, etc.), but the results are not ideal. Due to reasons such as environmental fluctuations, the problem of TFT characteristic uniformity of products cannot be well solved.

[0056] Based on the above problems existing in the prior art, the present application proposes a monitoring method for a display panel, a display device, and a thin film transistor, which can detect the turn-on voltage (Von) and turn-off voltage (Voff) of the TFTs in the display panel, screen out unqualified products, and adjust the gate turn-on voltage and gate turn-off voltage of the display panel with TFT characteristic offset caused by process fluctuations or environmental impacts during detection. While avoiding the outflow of unqualified products, it can maximize the loss of unqualified products caused by process environment fluctuations, improve the product yield, reduce the difficulty of process preparation, and avoid problems such as vertical crosstalk, flickering, and poor low-temperature startup.

[0057] The following will specifically describe the technical solutions of the present application and how the technical solutions of the present application solve the above technical problems with specific embodiments.

[0058] For example Figure 2 As shown, an embodiment of the present application provides a display panel 100, which includes a plurality of thin film transistors, and further includes: a conductive part and a monitoring thin film transistor located in the border area of the display panel 100; the conductive part includes a first conductive part 121 and a second conductive part 122, and the monitoring thin film transistor includes a first monitoring thin film transistor 131 and a second monitoring thin film transistor 132. The border area is the area around the AA area (Active Area, display area) in the display panel 100.

[0059] The first conductive part 121 is connected to the output terminal of the gate turn-on signal (VGH signal), and the second conductive part 122 is connected to the output terminal of the gate turn-off signal (VGL signal); the turn-on voltage of the first monitoring thin-film transistor 131 is the same as the turn-on voltage of the first thin-film transistor 111 to be monitored among the multiple thin-film transistors, and the turn-off voltage of the second monitoring thin-film transistor 132 is the same as the turn-off voltage of the second thin-film transistor 112 to be monitored among the multiple thin-film transistors.

[0060] The gate of the first monitoring thin-film transistor 131 is connected to the first conductive part 121, the source is connected to the first data line SD1, and the drain is connected to the control chip 210 of the display panel, and is used to output the turn-on feedback voltage (Von) to the control chip 210; the gate of the second monitoring thin-film transistor 132 is connected to the second conductive part 122, the source is connected to the second data line SD2, and the drain is connected to the control chip 210, and is used to output the turn-off feedback voltage (Voff) to the control chip 210; wherein the first data line SD1 is the data line connected to the source of the first thin-film transistor 111 to be monitored, and the second data line SD2 is the data line connected to the source of the second thin-film transistor 112 to be monitored.

[0061] As Figure 2 shown, the above-mentioned first conductive part 121 refers to the signal test pattern (pad) connected to the VGH signal, and the second conductive part 122 refers to the signal test pattern connected to the VGL signal; the signal test pattern is generally designed in the non-display area of the panel, such as on both sides of the bonding area.

[0062] It should be noted that the turn-on voltage refers to the drain output voltage when the thin-film transistor is in the turn-on state, and can be used to characterize the turn-on current Ion of the thin-film transistor. The turn-off voltage refers to the drain output voltage when the thin-film transistor is in the turn-off state, and can be used to characterize the leakage current Ioff of the thin-film transistor; the fact that the turn-on voltage of the above-mentioned first thin-film transistor 111 to be monitored is the same as that of the first monitoring thin-film transistor 131 means that when the first thin-film transistor 111 to be monitored and the first monitoring thin-film transistor 131 are loaded with the same turn-on voltage V1 at the gate and the same voltage V2 at the source, the drains have the same output voltage; similarly, the fact that the turn-off voltage of the above-mentioned second thin-film transistor 112 to be monitored is the same as that of the second monitoring thin-film transistor 132 means that when the second thin-film transistor 112 to be monitored and the second monitoring thin-film transistor 132 are loaded with the same turn-off voltage V3 at the gate and the same voltage V4 at the source, the drains have the same output voltage. That is, in the embodiments of the present application, the detection of the turn-on voltage of the first thin-film transistor 111 to be monitored can be realized by detecting the turn-on voltage of the first monitoring thin-film transistor 131, and the detection of the turn-off voltage of the second thin-film transistor 112 to be monitored can be realized by detecting the turn-off voltage of the second monitoring thin-film transistor 132.

[0063] Therefore, those skilled in the art can understand that the first monitoring thin-film transistor 131 is an on-current Ion monitoring structure, and the on-feedback voltage Von output from its drain can reflect the quality of the on-current Ion of the first thin-film transistor 111 to be monitored; the second monitoring thin-film transistor 132 is an off-current Ioff monitoring structure, and the off-feedback voltage Voff output from its drain can reflect the quality of the off-current Ioff of the second thin-film transistor 112 to be monitored.

[0064] In addition, as Figure 2 shown, a column of thin-film transistors to be monitored are connected to the same data line. Therefore, the above-mentioned first thin-film transistor 111 to be monitored refers to a column of thin-film transistors connected to the data line SD1, that is, the first monitoring thin-film transistor 131 can reflect the quality of the on-current Ion of a column of thin-film transistors. Similarly, the second monitoring thin-film transistor 132 can reflect the quality of the off-current Ioff of a column of thin-film transistors.

[0065] It should be noted that in the subsequent detection stage, only one detection voltage is loaded on the same data line SD1 or SD2, and this detection voltage is the maximum and minimum values of the SD loading voltage. For example, only the +5V voltage is loaded on the data line SD1, and only the -5V voltage is loaded on the data line SD2. The specific situation will be described in detail in the subsequent monitoring method section.

[0066] In addition, those skilled in the art can freely choose to provide the row scanning signal by fabricating the GOA circuit in the display panel or by binding the gate driver chip (G-IC) to provide the scanning signal. Figure 2 , Figure 3 Both are embodiments of setting the GOA (Gate on Array or Gate Driver on Array technology, that is, the array substrate driving technology) circuit.

[0067] The display panel 100 provided by the embodiment of the present application sets the turn-on voltage of the first monitoring thin-film transistor 131 to be the same as the turn-on voltage of the first thin-film transistor 111 to be monitored, and the turn-off voltage of the second monitoring thin-film transistor 132 to be the same as the turn-off voltage of the second thin-film transistor 112 to be monitored; the gate of the first monitoring thin-film transistor 131 is connected to the first conductive part 121, the source is connected to the first data line, and the drain is connected to the control chip 210 bound to the display panel 100; the gate of the second monitoring thin-film transistor 132 is connected to the second conductive part 122, the source is connected to the second data line, and the drain is connected to the control chip 210. Since the first conductive part 121 is connected to the gate turn-on signal output end and the second conductive part 122 is connected to the gate turn-off signal output end, after the display panel 100 is bound to external devices such as the control chip 210, the first monitoring thin-film transistor 131 outputs a turn-on feedback voltage to the control chip, and the second monitoring thin-film transistor 132 outputs a turn-off feedback voltage to the control chip. After forming a display device, it is possible to determine whether it is necessary to adjust the gate turn-on voltage and the gate turn-off voltage and determine whether the first thin-film transistor and / or the second thin-film transistor to be monitored is qualified by receiving the turn-on feedback voltage and the turn-off feedback voltage through the control chip, thereby determining whether the display panel is qualified. While avoiding the outflow of unqualified products, it can maximize the loss of unqualified products caused by process environment fluctuations, improve the product yield, and reduce the difficulty of process preparation.

[0068] It should be noted that the first thin-film transistor 111 and the second thin-film transistor 112 to be monitored in the embodiment of the present application are thin-film transistors provided in the AA area. Specifically, the first thin-film transistor 111 and the second thin-film transistor 112 are generally located in the edge area of the display area. Of course, during actual detection, the first thin-film transistor 111 and the second thin-film transistor 112 may not be thin-film transistors located in the display area. For example, they may be thin-film transistors included in the GOA circuit.

[0069] As Figure 2 shown, in some embodiments, in order to enable the source of the monitoring thin-film transistor to input the same source voltage as the source of the thin-film transistor to be monitored, when specifically setting the source of the monitoring thin-film transistor to be connected to the data line, taking the first monitoring thin-film transistor 131 as an example, a branch line is drawn from the signal line SD1 directly entering the first thin-film transistor 111 from the data driver chip (S-IC) and connected to the source of the first monitoring thin-film transistor. Directly drawing the branch line can make the source voltage environment of the monitoring thin-film transistor closer to the source voltage environment of the thin-film transistor to be monitored, and thus the output turn-on or turn-off feedback voltage can better characterize the turn-on current Ion and the leakage current Ioff when the thin-film transistor to be monitored is working.

[0070] During the specific manufacturing of the display panel, before the signal traces such as VGH, VGL, and SD enter the panel display area, some branch lines are led out and then made into test patterns (pads) for testing, including test patterns that can represent VGH and VGL signals, and test patterns that can represent the SD1 and SD2 data line signals. Therefore, as Figure 3 shown, in some embodiments, an SD1 test pattern 151 and an SD2 test pattern 152 are provided in the non-display area surrounding the display area of the display panel. The SD1 test pattern 151 and the SD2 test pattern 152 can be used for detecting the display panel such as lighting detection. The SD1 test pattern 151 is connected to the first data line SD1, and the SD2 test pattern 152 is connected to the second data line SD2. To enable the source of the monitoring thin-film transistor to input the same source voltage as the source of the thin-film transistor to be monitored, the source of the first monitoring thin-film transistor 131 is connected to the SD1 test pattern 151, and the second monitoring thin-film transistor 132 is connected to the SD2 test pattern 152. The source voltage of the monitoring thin-film transistor is supplied through the SD signal test pattern, which has the advantages of simple process and reduced wiring.

[0071] Optionally, in some embodiments, the turn-on voltage (Von) of the first monitoring thin-film transistor 131 is set to be the same as the turn-on voltage (Von) of the first thin-film transistor 111 to be monitored among the multiple thin-film transistors, and the turn-off voltage (Voff) of the first monitoring thin-film transistor 131 is the same as the turn-off voltage (Voff) of the first thin-film transistor 111 to be monitored, that is, the first monitoring thin-film transistor 131 and the first thin-film transistor 111 to be monitored have the same volt-ampere characteristics; similarly, the turn-off voltage of the second monitoring thin-film transistor 132 is the same as the turn-off voltage (Voff) of the second thin-film transistor 112 to be monitored among the multiple thin-film transistors, and the turn-on voltage (Von) of the second monitoring thin-film transistor 132 is the same as the turn-on voltage (Von) of the second thin-film transistor 112 to be monitored, that is, the second monitoring thin-film transistor 132 and the second thin-film transistor 112 to be monitored have the same volt-ampere characteristics.

[0072] During the specific implementation, when manufacturing the first thin-film transistor 111 to be monitored, the first monitoring thin-film transistor 131 can be manufactured synchronously. The first monitoring thin-film transistor 131 and the first thin-film transistor 111 to be monitored formed by the same process have the same electrical characteristics; when manufacturing the second thin-film transistor 112 to be monitored, the second monitoring thin-film transistor 132 can be manufactured synchronously. The second thin-film transistor 112 to be monitored and the second monitoring thin-film transistor 132 formed by the same process have the same electrical characteristics.

[0073] Optionally, referring to Figure 4As shown, in some embodiments, the first thin film transistor to be monitored 111 and the second thin film transistor to be monitored 112 are the same thin film transistor; in other words, for a thin film transistor to be monitored, both an on-current Ion monitoring structure and an off-current Ioff monitoring structure are provided. The first data line and the second data line are data lines located at the same position of the display panel 100, and the same data line is respectively connected to the source electrodes of the first monitoring thin film transistor 131 and the second monitoring thin film transistor 132.

[0074] Referring to Figure 4 As shown, the display panel 100 is provided with two first monitoring thin film transistors 131, that is, the on-current Ion monitoring structure. The gates of the two first monitoring thin film transistors 131 are both connected to the first conductive portion 121 (i.e., the VGH signal test pattern). The source electrode of the first first monitoring thin film transistor 1311 is connected to the SD1 test pattern 151 led out from the SD1 data line, and the on-current Ion characteristics of a column of thin film transistors to be monitored connected to the data line SD1 are monitored by outputting the first on-feedback voltage (Von1). The source electrode of the second first monitoring thin film transistor 1312 is connected to the SD2 test pattern 152 led out from the SD2 data line, and the on-current Ion characteristics of a column of thin film transistors to be monitored connected to the data line SD2 are monitored by outputting the second on-feedback voltage (Von2).

[0075] Continuing to refer to Figure 4 As shown, the display panel 100 is further provided with two second monitoring thin film transistors 132, that is, the off-current Ioff monitoring structure. The gates of the two second monitoring thin film transistors 132 are both connected to the second conductive portion 122 (i.e., the VGL signal test pattern). The source electrode of the first second monitoring thin film transistor 1321 is connected to the SD1 test pattern 151 led out from the SD1 data line, and the off-current Ioff characteristics of a column of thin film transistors to be monitored connected to the data line SD1 are monitored by outputting the first off-feedback voltage (Voff1). The source electrode of the second second monitoring thin film transistor 1322 is connected to the SD2 test pattern 152 led out from the SD2 data line, and the off-current Ioff characteristics of a column of thin film transistors to be monitored connected to the data line SD2 are monitored by outputting the second on-feedback voltage (Voff2).

[0076] During specific implementation, referring to Figure 4 、 Figure 5 , Figure 5 shows Figure 4For the specific setting manners of the first first monitoring thin film transistor 1311 and the second second monitoring thin film transistor 1322, connect the first conductive portion 121 (i.e., the VGH signal test pattern) to the gate of the first monitoring thin film transistor 1311 through the Gate via hole 141, connect the SD1 test pattern 151 to the source of the first monitoring thin film transistor 1311 through the SD (Source-Drain) via hole 142, and connect the drain to the control chip 210 bonded to the display panel 100; connect the second conductive portion 122 (i.e., the VGL signal test pattern) to the gate of the second monitoring thin film transistor 1322 through the Gate via hole 141, connect the SD2 test pattern 152 to the source of the second monitoring thin film transistor 1322 through the SD via hole 142, and connect the drain to the control chip 210 bonded to the display panel 100.

[0077] It should be noted that the film layers penetrated by the Gate via hole 141 depend on the metal layers where the first conductive portion 121 (i.e., the VGH signal test pattern) and the second conductive portion 122 (i.e., the VGL signal test pattern) are located. For example, if the VGH signal test pattern, the VGL signal test pattern, and the ITO (Indium-Tin Oxide) layer are in the same layer, the Gate via hole 141 penetrates the Gate layer and the ITO layer. Similarly, the film layers penetrated by the SD via hole 142 depend on the film layer where the SD signal is located. For example, if the SD signal test pattern and the ITO layer are in the same layer, the SD via hole 142 penetrates the SD layer and the ITO layer.

[0078] Those skilled in the art can set the number of the first monitoring thin film transistors (i.e., the on-current Ion monitoring structure) and the number of the second monitoring thin film transistors (i.e., the off-current Ioff monitoring structure) according to actual design requirements, and select the source voltage to which the first monitoring thin film transistor and the second thin film transistor are connected according to the thin film transistors to be monitored that need to be monitored.

[0079] Optionally, refer to Figure 4As shown in the figure, the first monitoring thin film transistor 131 includes a first active layer, and the second monitoring thin film transistor 132 includes a second active layer. In order to make the first monitoring thin film transistor 131 have the same turn-on voltage and turn-off voltage as the first thin film transistor to be monitored 111, and the second monitoring thin film transistor 132 have the same turn-on voltage and turn-off voltage as the second thin film transistor to be monitored 112, and to save manufacturing costs, in the embodiments of the present application, it is set that the shape of the first active layer is the same as the shape of the active layer included in the first thin film transistor to be monitored, and the shape of the second active layer is the same as the shape of the active layer included in the second thin film transistor to be monitored. For example, the shape of the active layer can be U-shaped, linear, etc. It is set that the material of the first active layer is the same as the material of the active layer included in the first thin film transistor to be monitored, and the material of the second active layer is the same as the material of the active layer included in the second thin film transistor to be monitored. For example, the material of the active layer can be selected from oxide semiconductor materials such as single crystal silicon, polycrystalline silicon, or indium gallium zinc oxide (IGZO).

[0080] Optionally, for a specific embodiment, the first monitoring thin film transistor 131 includes a first gate and a first source-drain, and the second monitoring thin film transistor 132 includes a second gate and a second source-drain. The first gate, the second gate, the gate included in the first thin film transistor to be monitored 111, and the gate included in the second thin film transistor to be monitored 112 are arranged in the same layer. The gates being arranged in the same layer can be formed by a single patterning process, thereby saving manufacturing costs. The first source-drain, the second source-drain, the source-drain included in the first thin film transistor to be monitored 111, and the source-drain included in the second thin film transistor to be monitored 112 are arranged in the same layer. The source-drains being arranged in the same layer can be formed by a single patterning process, thereby saving manufacturing costs. The first active layer, the second active layer, the active layer included in the first thin film transistor to be monitored, and the active layer included in the second thin film transistor to be monitored are arranged in the same layer. The active layers being arranged in the same layer can be formed by a single patterning process, thereby saving manufacturing costs.

[0081] It should be noted that for a general display panel, all the pixel thin film transistors in the panel are the same. Therefore, it can be set that the first monitoring thin film transistor, the second monitoring thin film transistor, the first thin film transistor to be monitored, and the second thin film transistor to be monitored are all the same.

[0082] Based on the same inventive concept, as Figure 6 shown, the embodiments of the present application provide a display device 200, including the above-mentioned display panel 100, as well as a control chip 210 and a power management chip 220 bonded to the display panel.

[0083] Refer to Figure 6The display device 200 shown, a power management chip 220 and a control chip 210 are bonded to the bonding area of the display panel 100. The control chip 210 is respectively connected to the power management chip 220, the first monitoring thin film transistor 131 and the second thin film transistor 132. The control chip 210 is configured to receive the turn-on feedback voltage Von, and determine whether the turn-on voltage characteristic of the thin film transistor to be monitored is qualified according to the turn-on feedback voltage Von; and / or, configured to receive the turn-off feedback voltage Voff, and determine whether the turn-off voltage characteristic of the thin film transistor to be monitored is qualified according to the turn-off feedback voltage Voff.

[0084] The display device provided by the embodiment of the present application can receive the turn-on feedback voltage and the turn-off feedback voltage through the control chip to judge whether it is necessary to adjust the gate turn-on voltage and the gate turn-off voltage, and determine whether the first thin film transistor to be monitored and / or the second thin film transistor to be monitored is qualified, so as to determine whether the display panel is qualified. While avoiding the outflow of unqualified products, it can maximally avoid the loss of unqualified products caused by process environment fluctuations, improve the product yield, and reduce the difficulty of process preparation.

[0085] Optionally, in some embodiments, refer to Figure 7 As shown, the control chip 210 includes a turn-on voltage amplification comparator 211 and a turn-off voltage amplification comparator 212. The first input terminal of the turn-on voltage amplification comparator 211 is configured to receive the reference turn-on voltage Von ref. The second input terminal of the turn-on voltage amplification comparator 211 is connected to the drain of the first monitoring thin film transistor 131, and is used to amplify the received turn-on feedback voltage Von and compare the magnitudes of the turn-on feedback voltage Von and the reference turn-on voltage Von ref. The first input terminal of the turn-off voltage amplification comparator 212 is configured to receive the reference turn-off voltage Voff ref. The second input terminal of the turn-off voltage amplification comparator 212 is connected to the drain of the second monitoring thin film transistor 132, and is used to amplify the received turn-off feedback voltage Voff and compare the magnitudes of the turn-off feedback voltage Voff and the reference turn-off voltage Voff ref. In actual design, the control chip is not limited to Figure 7 the structure shown, and other controller devices that can achieve the same function can be selected.

[0086] It should be noted that the value of the reference feedback turn-on voltage Von ref is the minimum turn-on voltage value allowed when the detection voltage is applied to the thin film transistor to be measured and the TFT is turned on. For example, when 5V is input to the source input terminal (SD1) and the gate is in the 15V VGH turned-on state, the drain output terminal must be guaranteed to reach at least 4.9V, which is a voltage slightly lower than the source. Generally, for the same panel product, the design of all pixel TFTs is the same. Under this premise, there is only one value for Von ref, but it has positive and negative polarities. Similarly, the value of the reference turn-off voltage Voff ref is the maximum drain output voltage that needs to be guaranteed when the detection voltage is applied to the thin film transistor to be measured and the TFT is normally turned off. Theoretically, it needs to be guaranteed to be around 0V. For example, when 5V is input to the source input terminal (SD1) and the gate is in the off state, the drain voltage must not exceed 0.1V at most. Similarly, for the same panel product, there is also only one value for Voff ref, and it only has positive and negative polarities.

[0087] In a specific embodiment, referring to Figure 6 、 Figure 8 As shown, assuming that the SD1 data line is loaded with a positive detection voltage and the SD2 data line is loaded with a negative detection voltage, then the drain of the first monitoring thin film transistor 131 will output two turn-on feedback voltages Von with different polarities; the display panel 100 is provided with two first monitoring thin film transistors 131. The gates of the two first monitoring thin film transistors 131 are both connected to the first conductive part 121 (i.e., the VGH signal test pattern). The source of the first first monitoring thin film transistor 1311 is connected to the SD1 test pattern 151 led out from the SD1 data line. Therefore, a positive turn-on feedback voltage Von+ will be output to the control chip 210. The source of the second first monitoring thin film transistor 1312 is connected to the SD2 test pattern 152 led out from the SD2 data line. Therefore, a negative turn-on feedback voltage Von- will be output to the control chip 210.

[0088] Optionally, referring to Figure 8As shown, the turn-on voltage amplifier comparator 211 includes a positive turn-on voltage amplifier comparator 2111 and a negative turn-on voltage amplifier comparator 2112. The positive input terminal of the positive turn-on voltage amplifier comparator 2111 is connected to the drain of the first first monitoring thin film transistor 1311, and the negative input terminal is configured to receive the positive reference turn-on voltage Von ref+. It is used to compare the positive turn-on feedback voltage Von+ output from the drain of the first first monitoring thin film transistor 1311 with Von ref+ and output the gate turn-on voltage adjustment signal R to the power management chip 220 according to the comparison result. If the value of Von+ is not less than Von ref+, the first gate turn-on voltage adjustment signal R1 is output to the power management chip 220. If the value of Von+ is less than Von ref+, the second gate turn-on voltage adjustment signal R2 is output to the power management chip 220.

[0089] The negative input terminal of the negative turn-on voltage amplifier comparator 2112 is connected to the drain of the second first monitoring thin film transistor 1312, and the positive input terminal is configured to receive the negative reference turn-on voltage signal Von ref-. It is used to compare the negative turn-on feedback voltage Von- output from the drain of the second first monitoring thin film transistor 1312 with Von ref- and output the gate turn-on voltage adjustment signal R to the power management chip 220 according to the comparison result. If the value of Von- is not less than Von ref-, the first gate turn-on voltage adjustment signal R1 is output to the power management chip 220. If the value of Von- is less than Von ref-, the second gate turn-on voltage adjustment signal R2 is output to the power management chip 220.

[0090] Similarly, referring to Figure 9 As shown, the turn-off voltage amplifier comparator 212 includes a positive turn-off voltage amplifier comparator 2121 and a negative turn-off voltage amplifier comparator 2122. The positive input terminal of the positive turn-off voltage amplifier comparator 2121 is connected to the drain of the first second monitoring thin film transistor 1321, and the negative input terminal is configured to receive the positive reference turn-off voltage signal Voffref+. It is used to compare the positive turn-off feedback voltage Voff+ output from the drain of the first second monitoring thin film transistor 1321 with Voffref+ and output the gate turn-off voltage adjustment signal Y to the power management chip 220 according to the comparison result. If the value of Voff+ is not greater than Voff ref+, the first gate turn-off voltage adjustment signal Y1 is output to the power management chip 220. If the value of Voff+ is greater than Voff ref+, the second gate turn-off voltage adjustment signal Y2 is output to the power management chip 220.

[0091] The negative turn-off voltage amplifier comparator 2122 has its negative input terminal connected to the drain of the second second monitoring thin-film transistor 1322. The positive input terminal is configured to receive the negative reference turn-on voltage signal Voff_ref-. It is used to compare the negative turn-off feedback voltage Voff- output from the drain of the second second monitoring thin-film transistor 1322 with Voff_ref-, and output the gate turn-off voltage adjustment signal Y to the power management chip 220 according to the comparison result. If the value of Voff- is not greater than Voff_ref-, the first gate turn-off voltage adjustment signal Y1 is output to the power management chip 220. If the value of Von- is greater than Von_ref-, the second gate turn-off voltage adjustment signal Y2 is output to the power management chip 220.

[0092] Optionally, in specific implementation, the first gate turn-on voltage adjustment signal R1 is the data voltage "0", and the second gate turn-on voltage adjustment signal R2 is the data voltage "1"; the first gate turn-off voltage adjustment signal Y1 is the data voltage "0", and the second gate turn-off voltage adjustment signal Y2 is the data voltage "1".

[0093] Reference Figure 6 As shown, the power management chip 220 includes a gate turn-on voltage adjustment signal receiving terminal a, a gate turn-off voltage adjustment signal receiving terminal b, a stop signal output terminal c, a gate turn-on signal output terminal e, and a gate turn-off signal output terminal f; the stop signal output terminal c is used to output a stop voltage signal S when the gate turn-on voltage VGH or the gate turn-off voltage VGL is adjusted to the maximum range.

[0094] Continue to refer Figure 6 As shown, the control chip 210 is bonded to the bonding area of the display panel 100 and is respectively connected to the gate turn-on voltage adjustment signal receiving terminal a, the gate turn-off voltage adjustment signal receiving terminal b, the stop signal output terminal c, the drain of the first monitoring thin-film transistor 131, and the drain of the second monitoring thin-film transistor 132. It is used to receive the turn-on feedback voltage Von, compare the turn-on feedback voltage Von with the reference turn-on voltage, output the gate turn-on voltage adjustment signal R to the gate turn-on voltage adjustment signal receiving terminal a according to the comparison result, and receive the stop voltage signal S output from the stop signal output terminal c to determine whether the thin-film transistor to be monitored is qualified; and receive the turn-off feedback voltage Voff output from the second monitoring thin-film transistor 132, compare the turn-off feedback voltage Voff with the reference turn-off voltage, output the gate turn-off voltage adjustment signal Y to the gate turn-off voltage adjustment signal receiving terminal b according to the comparison result, and receive the stop voltage signal S output from the stop signal output terminal c to determine whether the thin-film transistor to be monitored is qualified.

[0095] In some specific embodiments, the display device includes a gate driving circuit, and the gate driving circuit can be a GOA circuit or a gate driving chip G-IC, such asFigure 6 The display device shown has a gate driving circuit which is a GOA circuit; the gate turn-on signal (VGH) output terminal e and the gate turn-off signal (VGL) output terminal f of the power management chip 220 are connected to the gate driving circuit (GOA circuit), and the gate turn-on voltage adjustment signal receiving terminal a, the gate turn-off voltage adjustment signal receiving terminal b, and the stop signal output terminal c of the power management chip 220 are connected to the control chip 210.

[0096] The power management chip 220 has the following functions: receiving the gate turn-on voltage adjustment signal R output by the control chip 210, not performing voltage adjustment when the received gate turn-on voltage adjustment signal R is the first gate turn-on voltage adjustment signal R1, and adjusting the gate turn-on voltage (VGH) when the received gate turn-on voltage adjustment signal R is the second gate turn-on voltage adjustment signal R2; receiving the gate turn-off voltage adjustment signal Y output by the control chip 210, not performing voltage adjustment when the received gate turn-off voltage adjustment signal Y is the first gate turn-on voltage adjustment signal Y1, and adjusting the gate turn-off voltage (VGL) when the received gate turn-on voltage adjustment signal Y is the second gate turn-on voltage adjustment signal Y2; when the gate turn-on voltage (VGH) or the gate turn-off voltage (VGL) is adjusted to the maximum range, the stop signal output terminal c outputs a stop voltage signal S to the control chip 210.

[0097] Based on the same inventive concept, the present application provides a method for monitoring the characteristics of thin film transistors based on the above display device, referring to Figure 10 as shown, including:

[0098] S100: The control chip receives the turn-on feedback voltage output by the first monitoring thin film transistor, compares the turn-on feedback voltage with the reference turn-on voltage, and determines whether the turn-on voltage characteristic of the thin film transistor to be monitored is qualified according to the comparison result.

[0099] S200: The control chip receives the turn-off feedback voltage output by the second monitoring thin film transistor, compares the turn-off feedback voltage with the reference turn-off voltage, and determines whether the turn-off voltage characteristic of the thin film transistor to be monitored is qualified according to the comparison result.

[0100] It should be noted that the above S100 and the above S200 do not represent the sequence of steps. In the actual method for monitoring the characteristics of thin film transistors, only S100 can be executed, only S200 can be executed, or S100 and S200 can be executed simultaneously. When S100 and S200 are executed simultaneously, the sequence of S100 and S200 can also be interchanged.

[0101] In a specific embodiment, in the specific embodiment of determining whether the turn-on voltage characteristic of the thin film transistor to be measured is qualified according to the comparison result of the turn-on feedback voltage Von and the reference turn-on voltage, referring to Figure 6As shown, when the control chip 210 receives the turn-on feedback voltage Von output by the first monitoring thin-film transistor 131, it compares the turn-on feedback voltage Von with the reference turn-on voltage Vonref, and determines whether the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified according to the comparison result. The specific steps are as follows:

[0102] S110: If the turn-on feedback voltage Von is not less than the reference turn-on voltage Von ref, the control chip 210 outputs the first gate turn-on voltage adjustment signal R1 to the power management chip 220. The power management chip 220 does not perform voltage adjustment, and determines that the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified.

[0103] S120: If the turn-on feedback voltage Von is less than the reference turn-on voltage Von ref, the control chip 210 outputs the second gate turn-on voltage adjustment signal R2 to the power management chip 220. The power management chip 220 controls the gate turn-on signal output terminal e to output an increased or decreased gate turn-on voltage value (VGH) according to the received second gate turn-on voltage adjustment signal R2, adjusts the gate turn-on voltage of the first monitoring thin-film transistor 131, and determines whether the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified according to the adjustment result.

[0104] Further, in a specific embodiment, continue to refer to Figure 6 As shown, the control chip 210 determines whether the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified according to the adjustment result. The specific judgment process is as follows:

[0105] S121: When the power management chip 220 receives the second gate turn-on voltage adjustment signal R2, it controls the gate turn-on signal output terminal e to output a voltage value (VGH) that increases or decreases according to a set step. If the output voltage value after increasing or decreasing again exceeds the range of the power management chip, it issues a stop voltage signal S to the control chip 210.

[0106] S122: Before the control chip 210 receives the stop voltage signal S, if the turn-on feedback voltage Von is not less than the reference turn-on voltage Von ref, it determines that the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified. The control chip 210 outputs the first gate turn-on voltage adjustment signal R1 to the power management chip 220, and the power management chip 220 determines that the gate turn-on voltage output by the current gate turn-on signal terminal e is the gate turn-on voltage of the thin-film transistor to be monitored; after the control chip 210 receives the stop voltage signal S, it determines that the turn-on voltage characteristic of the thin-film transistor to be monitored is unqualified.

[0107] During specific implementation, refer to Figure 6 , Figure 8As shown in the figure, assume that the display device is provided with two first monitoring thin film transistors. The first first monitoring thin film transistor 1311 has its gate connected to the first conductive part 121 (i.e., the VGH signal test pattern), and its source connected to the SD1 signal test pattern. The second first monitoring thin film transistor 1312 has its gate connected to the first conductive part 121 (i.e., the VGH signal test pattern), and its source connected to the SD2 signal test pattern.

[0108] When a positive detection voltage is loaded, assume that the voltage loaded on the SD1 data line is 5V and the gate turn-on voltage (VGH) is 15V. At this time, a positive turn-on feedback voltage will be generated at the drain of the first first monitoring thin film transistor 1311. For example, Von+ is 4.5V. The positive turn-on voltage amplifier comparator 2111 receives Von+ and compares it with the positive reference turn-on voltage Von ref+. Assume that the value of the positive reference turn-on voltage Von ref+ is 4.9V. The Von+ voltage value is less than the Von ref+ voltage value. Therefore, it is determined that adjustment is required. The positive turn-on voltage amplifier comparator 2111 outputs the second gate turn-on voltage adjustment signal R2 to the power management chip 220.

[0109] Assume that the range of the gate turn-on voltage (VGH) output by the power management chip 220 is 15±10V. After receiving the second gate turn-on voltage adjustment signal R2, the power management chip 220 starts to increase the gate turn-on voltage (VGH) in steps of 0.1V. As the gate turn-on voltage increases, the value of the turn-on feedback voltage Von+ will also increase synchronously. The positive turn-on voltage amplifier comparator 2111 continues to receive the increased positive turn-on feedback voltage, compares it with the positive reference turn-on voltage Von ref+, and determines whether to output the gate turn-on voltage adjustment signal R as the first gate turn-on voltage adjustment signal R1 or the second gate turn-on voltage adjustment signal R2 according to the comparison result. Assume that when the gate turn-on voltage (VGH) increases to 20V and is within the gate turn-on voltage range of the power management chip 220, the power management chip 220 does not output a stop signal S. At this time, the value of the positive turn-on feedback voltage Von+ is 4.9V, and the value of the positive turn-on feedback voltage Von+ is not less than the value of the positive reference turn-on voltage Von ref+. The gate turn-on voltage adjustment signal R output by the positive turn-on voltage amplifier comparator 2111 changes from the second gate turn-on voltage adjustment signal R2 to the first gate turn-on voltage adjustment signal R1. The control chip 210 determines that the adjustment is successful, that is, it is determined that the turn-on voltage characteristic of the thin film transistor to be monitored is qualified. Assume that there is no other turn-on feedback voltage Von value less than the reference voltage Von ref value. Then it is determined that the gate turn-on voltage of 20V output by the power management chip 220 at this time is the voltage loaded when the display device is in use.

[0110] It is assumed that when the gate turn-on voltage increases to 25V, the maximum range of the gate turn-on voltage output by the power management chip 220 is reached. The power management chip 220 outputs a stop signal S to the control chip 210, and the control chip 210 stops outputting the gate turn-on voltage adjustment signal R. At this time, the turn-on feedback voltage Von+ is 4.8V, and the value of the turn-on feedback voltage Von+ is still less than the value of the reference turn-on voltage Von ref+. The control chip 210 determines that the adjustment fails and determines that the turn-on voltage characteristic of the thin film transistor to be monitored is unqualified.

[0111] Similarly, when loading a negative detection voltage, it is assumed that the voltage loaded on the SD2 data line is -5V and the gate turn-on voltage (VGH) is 15V. At this time, a negative turn-on feedback voltage will be generated at the drain of the second first monitoring thin film transistor 1312. For example, Von- is -4.5V. The negative turn-on voltage amplifier comparator 2121 receives Von- and compares it with the negative reference turn-on voltage Vonref-. It is assumed that the value of the negative reference turn-on voltage Von ref- is -4.9V. The Von- voltage value is less than the Von ref- voltage value. Therefore, it is determined that adjustment is required. The negative turn-on voltage amplifier comparator 2112 outputs a second gate turn-on voltage adjustment signal R2 to the power management chip 220.

[0112] It is assumed that the range of the gate turn-on voltage (VGH) output by the power management chip 220 is 15 ± 10V. After receiving the second gate turn-on voltage adjustment signal R2, the power management chip 220 starts to increase the gate turn-on voltage (VGH) in steps of 0.1V. As the gate turn-on voltage increases, the value of the turn-on feedback voltage Von- will also increase synchronously. The negative turn-on voltage amplifier comparator 2112 continues to receive the increased negative turn-on feedback voltage and compares it with the negative reference turn-on voltage Von ref-. According to the comparison result, it is determined whether the output gate turn-on voltage adjustment signal R is the first gate turn-on voltage adjustment signal R1 or the second gate turn-on voltage adjustment signal R2; it is assumed that when the gate turn-on voltage (VGH) increases to 20V, within the gate turn-on voltage range of the power management chip 220, the power management chip 220 does not output a stop signal S. The value of the negative turn-on feedback voltage Von- is -4.9V, and the value of the negative turn-on feedback voltage Von- is not less than the value of the negative reference turn-on voltage Von ref-. The gate turn-on voltage adjustment signal R output by the negative turn-on voltage amplifier comparator 2112 changes from the second gate turn-on voltage adjustment signal R2 to the first gate turn-on voltage adjustment signal R1. The control chip 210 determines that the adjustment is successful, that is, it determines that the turn-on voltage characteristic of the thin film transistor to be monitored is qualified. It is assumed that there is no other turn-on feedback voltage Von value less than the reference turn-on voltage Von ref. Then it is determined that the gate turn-on voltage of 20V output by the power management chip 220 at this time is the voltage loaded when the display device is in use.

[0113] It is assumed that when the gate turn-on voltage increases to 25V, the maximum range of the gate turn-on voltage output by the power management chip 220 is reached. The power management chip 220 outputs a stop signal S to the control chip 210, and the control chip 210 stops outputting the gate turn-on voltage adjustment signal R. At this time, the turn-on feedback voltage Von- is -4.8V, and the value of the turn-on feedback voltage Von- is still less than the value of the reference turn-on voltage Von ref-. The control chip 210 determines that the adjustment fails and determines that the turn-on voltage characteristic of the thin film transistor to be monitored is unqualified.

[0114] Those skilled in the art can understand that the control chip 210 can simultaneously receive multiple positive and negative turn-on feedback voltages Von+ and Von-, and determine the output gate turn-on voltage adjustment signal R according to Von+ and Von-. When there is a second gate turn-on voltage adjustment signal R2 output by the turn-on voltage comparator 211, the power management chip 220 adjusts the voltage value (VGH) of the gate turn-on output terminal and determines whether the turn-on voltage characteristic of the thin film transistor to be monitored is qualified according to the above adjustment method.

[0115] In a specific embodiment, in the specific embodiment of determining whether the turn-off voltage characteristic of the thin film transistor to be measured is qualified according to the comparison result of the turn-off feedback voltage Voff and the reference turn-off voltage, refer to Figure 6 As shown, when the control chip 210 receives the turn-off feedback voltage Voff output by the second monitoring thin film transistor 132, it compares the turn-off feedback voltage Voff with the reference turn-off voltage Voff ref, and determines whether it is necessary to adjust the gate turn-off voltage and whether the turn-off voltage characteristic of the thin film transistor to be monitored is qualified according to the comparison result. The specific steps are as follows:

[0116] S210: If the turn-off feedback voltage Voff is not greater than the reference turn-off voltage Voff ref, the control chip 210 outputs a first gate turn-off voltage adjustment signal Y1 to the power management chip 220. The power management chip 220 does not perform voltage adjustment and determines that the turn-off voltage characteristic of the thin film transistor to be monitored is qualified.

[0117] S220: If the turn-off feedback voltage Voff is greater than the reference turn-off voltage Voff ref, the control chip 210 determines that it is necessary to adjust the gate turn-off voltage. The control chip 210 outputs a second gate turn-off voltage adjustment signal Y2 to the power management chip 220. The power management chip 220 controls the gate turn-off signal output terminal f to output an increased or decreased gate turn-off voltage value (VGL) according to the received second gate turn-off voltage adjustment signal Y2, adjusts the gate turn-off voltage of the second monitoring thin film transistor 132, and determines whether the turn-off voltage characteristic of the thin film transistor to be monitored is qualified according to the adjustment result.

[0118] Further, in a specific embodiment, continue to refer to Figure 6 As shown, the control chip 210 determines whether the turn-off voltage characteristic of the thin film transistor to be monitored is qualified according to the adjustment result. The specific judgment process is as follows:

[0119] S221: When the power management chip 220 receives the second gate turn-off voltage adjustment signal Y2, it controls the output voltage value (VGL) of the gate turn-off signal output terminal f to increase or decrease according to a set step. If the output voltage value after increasing or decreasing again exceeds the range of the power management chip 220, a stop voltage signal S is sent to the control chip 210.

[0120] S222: Before the control chip 210 receives the stop voltage signal S, if the turn-off feedback voltage Voff is not greater than the reference turn-off voltage Voff ref, it is determined that the turn-off voltage characteristic of the thin film transistor to be monitored is qualified. The control chip 210 outputs the first gate turn-off voltage adjustment signal Y1 to the power management chip 220, and the power management chip 220 determines that the gate turn-off voltage output by the current gate turn-off signal terminal f is the gate turn-off voltage of the thin film transistor to be monitored; after the control chip 210 receives the stop voltage signal S, it is determined that the turn-off voltage characteristic of the thin film transistor to be monitored is unqualified.

[0121] During specific implementation, refer to Figure 6 , Figure 9 As shown, assume that the display device is provided with two second monitoring thin film transistors. For the first second monitoring thin film transistor 1321, the gate is connected to the first conductive part 122 (i.e., the VGL signal test pattern), and the source is connected to (the SD1 signal test pattern); for the second second monitoring thin film transistor 1322, the gate is connected to the first conductive part 122 (i.e., the VGL signal test pattern), and the source is connected to (the SD2 signal test pattern).

[0122] When loading the forward detection voltage, assume that the voltage loaded on the SD1 data line is 5V and the gate turn-off voltage (VGL) is -15V. At this time, a positive turn-off feedback voltage will be generated at the drain of the first second monitoring thin film transistor 1321. For example, Voff+ is 0.3V. The control chip 210 receives Voff+ and compares it with the positive reference turn-off voltage Voff ref+. Assume that the value of the positive reference turn-off voltage Voff ref+ is 0.1V. The Voff+ voltage value is greater than the Voff ref+ voltage value. Therefore, it is determined that adjustment is required, and the positive turn-off voltage amplifier comparator 2121 outputs the second gate turn-off voltage adjustment signal Y2 to the power management chip 220.

[0123] Assume that the range of the gate-off voltage (VGL) output by the power management chip 220 is -15 ± 10V. After receiving the second gate-off voltage adjustment signal Y2, the power management chip 220 starts to decrease the gate-off voltage (VGL) in steps of 0.1V (adjusting from -15V to -25V). As the gate-off voltage decreases, the value of the off-state feedback voltage Voff+ also decreases synchronously. The positive off-state voltage amplifier comparator 2121 continues to receive the decreased off-state feedback voltage and compares it with the positive reference off-state voltage Voff ref+. According to the comparison result, it determines whether the gate-off voltage adjustment signal Y output is the first gate-off voltage adjustment signal Y1 or the second gate-off voltage adjustment signal Y2; Assume that when the gate-off voltage (VGL) decreases to -20V, within the gate-off voltage range of the power management chip 220, the power management chip 220 does not output a stop signal S. The value of the positive off-state feedback voltage Voff+ is 0.1V, and the value of the positive off-state feedback voltage Voff+ is not greater than the positive reference off-state voltage Voff ref+. The gate-off voltage adjustment signal Y output by the positive off-state voltage amplifier comparator 2121 changes from the second gate-off voltage adjustment signal Y2 to the first gate-off voltage adjustment signal Y1. The control chip 210 determines that the adjustment is successful, that is, it determines that the gate-off voltage characteristics of the thin-film transistor to be monitored are qualified. Assume that there is no other off-state feedback voltage Voff value greater than the reference off-state voltage Voffref value, then it is determined that the gate-off voltage -20V output by the power management chip 220 at this time is the voltage loaded when the display device is in use.

[0124] Assume that when the gate-off voltage decreases to -25V, it reaches the maximum range of the gate-off voltage output by the power management chip 220. The power management chip 220 outputs a stop signal S to the control chip 210, and the control chip 210 stops outputting the gate-off voltage adjustment signal R. At this time, the off-state feedback voltage Voff is 0.2V, and the value of the off-state feedback voltage Voff+ is still greater than the value of the reference off-state voltage Voff ref+. The control chip 210 determines that the adjustment fails and determines that the gate-off voltage characteristics of the thin-film transistor to be monitored are unqualified.

[0125] Similarly, when loading the negative detection voltage, assume that the voltage loaded on the SD2 data line is -5V and the gate-off voltage (VGL) is -15V. At this time, a negative turn-off feedback voltage will be generated at the drain of the second monitoring thin-film transistor 1322. For example, Voff- is -0.3V. The negative turn-off voltage amplifier comparator 2122 receives Voff- and compares it with the negative reference turn-off voltage Voff ref-. Assume that the value of the negative reference turn-off voltage Voff ref- is -0.1V. Since the Voff- voltage value is greater than the Voff ref- voltage value, it is determined that adjustment is needed. The negative turn-off voltage amplifier comparator 2122 outputs the second gate-off voltage adjustment signal Y2 to the power management chip 220.

[0126] Assume that the range of the gate-off voltage (VGL) output by the power management chip 220 is 15 ± 10V. After receiving the second gate-off voltage adjustment signal Y2, the power management chip 220 starts to decrease the gate-off voltage (VGL) in steps of 0.1V. As the gate-off voltage decreases, the value of the turn-off feedback voltage Voff- will also decrease synchronously. The negative turn-off voltage amplifier comparator 2122 continues to receive the decreased negative turn-off feedback voltage and compares it with the negative reference turn-off voltage Voff ref-. According to the comparison result, it is determined whether the output gate-off voltage adjustment signal Y is the first gate-off voltage adjustment signal Y1 or the second gate-off voltage adjustment signal Y2. Assume that when the gate-off voltage (VGL) increases to 20V, within the gate-off voltage range of the power management chip 220, the power management chip 220 does not output a stop signal S. At this time, the value of the negative turn-off feedback voltage Voff- is -0.1V, and the value of the negative turn-off feedback voltage Voff- is not greater than the value of the negative reference turn-off voltage Voff ref-. The gate-off voltage adjustment signal Y output by the negative turn-off voltage amplifier comparator 2122 changes from the second gate-off voltage adjustment signal Y2 to the first gate-off voltage adjustment signal Y1. The control chip 210 determines that the adjustment is successful, that is, it is determined that the turn-off voltage characteristic of the thin-film transistor to be monitored is qualified. Assume that there is no other turn-off feedback voltage Voff value greater than the reference turn-off voltage Voff ref value. Then it is determined that the gate-off voltage of 20V output by the power management chip 220 at this time is the voltage loaded when the display device is in use.

[0127] It is assumed that when the gate turn-off voltage increases to 25V, the maximum range of the gate turn-off voltage output by the power management chip 220 is reached. The power management chip 220 outputs a stop signal S to the control chip 210, and the control chip 210 stops outputting the gate turn-off voltage adjustment signal R. At this time, the turn-off feedback voltage Voff- is -0.2V, and the value of the turn-off feedback voltage Voff- is still greater than the value of the reference turn-off voltage Voff ref-. The control chip 210 determines that the adjustment fails and determines that the turn-off voltage characteristics of the thin film transistor to be monitored are unqualified.

[0128] Those skilled in the art can understand that the control chip 210 can receive multiple positive and negative turn-off feedback voltages Voff+ and Voff- simultaneously, and determine the output gate turn-off voltage adjustment signal R according to Voff+ and Voff-. When there is a second gate turn-off voltage adjustment signal Y2 output by the turn-off voltage comparator 212, the power management chip 220 adjusts the voltage value (VGL) of the gate turn-off output terminal, and determines whether the turn-off voltage characteristics of the thin film transistor to be monitored are qualified according to the above adjustment method.

[0129] In addition, for a display device that simultaneously sets the first monitoring thin film transistor and the second monitoring thin film transistor, as Figure 6 shown, the control chip 210 can simultaneously detect and adjust the turn-on voltage characteristics and turn-off voltage characteristics of the thin film transistor to be monitored, and determine whether the display device is qualified according to the detection results, so as to avoid unqualified products from flowing out. The specific process is as follows:

[0130] S301: The control chip determines that both the turn-off voltage characteristics and turn-on voltage characteristics of the thin film transistor to be monitored are qualified, and outputs a qualified instruction;

[0131] S302: The control chip determines that either the turn-off voltage characteristics or the turn-on voltage characteristics of the thin film transistor to be monitored are unqualified, or both are unqualified, and outputs an unqualified instruction.

[0132] Similarly, for a display device that only includes the first monitoring thin film, the control chip determines that the turn-on voltage characteristics of the thin film transistor to be monitored are qualified and outputs a qualified instruction; otherwise, it outputs an unqualified instruction; for a display device that only includes the second monitoring thin film, the control chip determines that the turn-off voltage characteristics of the thin film transistor to be monitored are qualified and outputs a qualified instruction; otherwise, it outputs an unqualified instruction.

[0133] Those skilled in the art can understand that the control chip outputting a qualified instruction can have various forms of expression, such as connecting an indicator light, an external detection device, etc., as long as it can enable the detection personnel to distinguish whether the display device is a defective product.

[0134] Applying the embodiments of the present application can at least achieve the following beneficial effects:

[0135] The display panel and the display device provided by the embodiments of the present application are configured such that the turn-on voltage of the first monitoring thin-film transistor is the same as the turn-on voltage of the first thin-film transistor to be monitored, and the turn-off voltage of the second monitoring thin-film transistor is the same as the turn-off voltage of the second thin-film transistor to be monitored. The gate of the first monitoring thin-film transistor is connected to the first conductive portion, the source is connected to the first data line, and the drain is connected to the control chip bonded to the display panel. The gate of the second monitoring thin-film transistor is connected to the second conductive portion, the source is connected to the second data line, and the drain is connected to the control chip. After the display panel is bonded with external devices such as the control chip, it can receive the turn-on feedback voltage and the turn-off feedback voltage through the control chip to determine whether the display panel is qualified, avoiding the outflow of unqualified products. It can also receive the turn-on feedback voltage and the turn-off feedback voltage through the control chip to determine whether it is necessary to adjust the gate turn-on voltage and the gate turn-off voltage and to determine whether the first thin-film transistor to be monitored and / or the second thin-film transistor to be monitored is qualified, thereby determining whether the display panel is qualified. While avoiding the outflow of unqualified products, it can maximize the avoidance of losses caused by unqualified products due to process environment fluctuations, improve the product yield, and reduce the difficulty of process preparation.

[0136] Those skilled in the art of the present technology can understand that the steps, measures, and solutions in the various operations, methods, and processes discussed in the present application can be alternated, changed, combined, or deleted. Further, the other steps, measures, and solutions in the various operations, methods, and processes discussed in the present application can also be alternated, changed, rearranged, decomposed, combined, or deleted. Further, the steps, measures, and solutions in the prior art that are the same as those disclosed in the present application can also be alternated, changed, rearranged, decomposed, combined, or deleted.

[0137] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present application.

[0138] The terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present application, unless otherwise specified, the meaning of "a plurality" is two or more.

[0139] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any one or more embodiments or examples in a suitable manner.

[0140] It should be understood that although the steps in the flowchart of the accompanying drawings are shown in sequence according to the indication of the arrows, these steps are not necessarily executed in the sequence indicated by the arrows. Unless otherwise clearly stated in this article, there is no strict order restriction for the execution of these steps, and they can be executed in other sequences. Moreover, at least a part of the steps in the flowchart of the accompanying drawings may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and their execution order is not necessarily sequential, but can be executed alternately or alternately with at least a part of other steps or sub-steps or stages of other steps.

[0141] The above are only some embodiments of the present application. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present application, several improvements and refinements can be made, and these improvements and refinements should also be regarded as the protection scope of the present application.

Claims

1. A display panel includes a plurality of thin film transistors, characterized in that, Including: A conductive part and a monitoring thin-film transistor located in the border area of the display panel; The conductive part includes a first conductive part and / or a second conductive part, and the monitoring thin-film transistor includes a first monitoring thin-film transistor and / or a second monitoring thin-film transistor; The first conductive part is connected to the gate turn-on signal output terminal, and the second conductive part is connected to the gate turn-off signal output terminal; The turn-on voltage of the first monitoring thin-film transistor is the same as the turn-on voltage of the first thin-film transistor to be monitored among the multiple thin-film transistors, and the turn-off voltage of the second monitoring thin-film transistor is the same as the turn-off voltage of the second thin-film transistor to be monitored among the multiple thin-film transistors; The gate of the first monitoring thin-film transistor is connected to the first conductive part, the source is connected to the first data line, and the drain is connected to the control chip bound to the display panel, and is used to output a turn-on feedback voltage to the control chip; The gate of the second monitoring thin-film transistor is connected to the second conductive part, the source is connected to the second data line, and the drain is connected to the control chip, and is used to output a turn-off feedback voltage to the control chip; The first data line is the data line connected to the source of the first thin-film transistor to be monitored, and the second data line is the data line connected to the source of the second thin-film transistor to be monitored; If the first thin-film transistor to be monitored and the second thin-film transistor to be monitored are the same thin-film transistor; The first data line and the second data line are data lines located at the same position of the display panel, and the same data line is respectively connected to the source of the first monitoring thin-film transistor and the source of the second monitoring thin-film transistor; The thin-film transistors to be monitored in one column are connected to the same data line; A first data line test pattern and a second data line test pattern are arranged in the non-display area surrounding the display area of the display panel. The first data line test pattern is connected to the first data line, the second data line test pattern is connected to the second data line, the source of the first monitoring thin-film transistor is connected to the first data line test pattern, the source of the second monitoring thin-film transistor is connected to the second data line test pattern, and the source voltage of the monitoring thin-film transistor is supplied through the data line test pattern.

2. The display panel according to claim 1, wherein, The turn-off voltage of the first monitoring thin-film transistor is the same as the turn-off voltage of the first thin-film transistor to be monitored; The turn-on voltage of the second monitoring thin-film transistor is the same as the turn-on voltage of the second thin-film transistor to be monitored.

3. The display panel according to any one of claims 1-2, characterized in that, The first monitoring thin-film transistor includes a first active layer, and the second monitoring thin-film transistor includes a second active layer; The shape of the first active layer is the same as the shape of the active layer included in the first thin-film transistor to be monitored, and the shape of the second active layer is the same as the shape of the active layer included in the second thin-film transistor to be monitored; The material of the first active layer is the same as the material of the active layer included in the first thin-film transistor to be monitored, and the material of the second active layer is the same as the material of the active layer included in the second thin-film transistor to be monitored.

4. The display panel according to claim 3, wherein The first monitoring thin-film transistor includes a first gate and a first source-drain, and the second monitoring thin-film transistor includes a second gate and a second source-drain; The first gate, the second gate, the gate included in the first thin film transistor to be monitored, and the gate included in the second thin film transistor to be monitored are arranged in the same layer; The first source-drain electrode, the second source-drain electrode, the source-drain electrode included in the first thin film transistor to be monitored, and the source-drain electrode included in the second thin film transistor to be monitored are arranged in the same layer; The first active layer, the second active layer, the active layer included in the first thin film transistor to be monitored, and the active layer included in the second thin film transistor to be monitored are arranged in the same layer.

5. A display device, characterized in that, Including the display panel, the control chip, and the power management chip according to any one of claims 1-4; The power management chip and the control chip are bonded to the bonding area of the display panel, and the control chip is respectively connected to the power management chip, the drain of the first monitoring thin film transistor, and the drain of the second monitoring thin film transistor; The control chip is configured to receive the turn-on feedback voltage, compare the turn-on feedback voltage with a reference turn-on voltage, and determine whether the turn-on voltage characteristic of the thin film transistor to be monitored is qualified according to the comparison result; and / or, the control chip is configured to receive the turn-off feedback voltage, compare the turn-off feedback voltage with a reference turn-off voltage, and determine whether the turn-off voltage characteristic of the thin film transistor to be monitored is qualified according to the comparison result.

6. The display device according to claim 5, wherein The control chip includes a turn-on voltage amplifier comparator and a turn-off voltage amplifier comparator; The first input terminal of the turn-on voltage amplifier comparator is configured to receive the reference turn-on voltage, and the second input terminal of the turn-on voltage amplifier comparator is connected to the drain of the first monitoring thin film transistor, and is configured to amplify the received turn-on feedback voltage and compare the magnitudes of the turn-on feedback voltage and the reference turn-on voltage; The first input terminal of the turn-off voltage amplifier comparator is configured to receive the reference turn-off voltage, and the second input terminal of the turn-off voltage amplifier comparator is connected to the drain of the second monitoring thin film transistor, and is configured to amplify the received turn-off feedback voltage and compare the magnitudes of the turn-off feedback voltage and the reference turn-off voltage.

7. A monitoring method for a thin film transistor, which is used for the display device according to any one of claims 5-6, characterized in that, Including: The control chip receives the turn-on feedback voltage output by the first monitoring thin film transistor, compares the turn-on feedback voltage with a reference turn-on voltage, and determines whether the turn-on voltage characteristic of the thin film transistor to be monitored is qualified according to the comparison result; and / or, The control chip receives the turn-off feedback voltage output by the second monitoring thin film transistor, compares the turn-off feedback voltage with a reference turn-off voltage, and determines whether the turn-off voltage characteristic of the thin film transistor to be monitored is qualified according to the comparison result.

8. The monitoring method according to claim 7, characterized in that Determining whether the turn-on voltage characteristic of the thin film transistor to be monitored is qualified according to the comparison result includes: Comparing the turn-on feedback voltage with a reference turn-on voltage. If the turn-on feedback voltage is not less than the reference turn-on voltage, output a first gate turn-on voltage adjustment signal to the power management chip, and the power management chip does not perform voltage adjustment, and determine that the turn-on voltage characteristic of the thin film transistor to be monitored is qualified; If the turn-on feedback voltage is less than the reference turn-on voltage, a second gate turn-on voltage adjustment signal is output to the power management chip. The power management chip controls the voltage value output by the gate turn-on signal output terminal to increase or decrease according to the received second gate turn-on voltage adjustment signal, so as to adjust the gate turn-on voltage of the first monitoring thin-film transistor. The control chip determines whether the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified according to the adjustment result.

9. The monitoring method according to claim 8, characterized in that, The control chip determines whether the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified according to the adjustment result, including: When the power management chip receives the second gate turn-on voltage adjustment signal, it controls the voltage value output by the gate turn-on signal output terminal to increase or decrease according to a set step. If the output voltage value after increasing or decreasing again exceeds the range of the power management chip, a stop voltage signal is sent to the control chip. Before receiving the stop voltage signal, if the turn-on feedback voltage is not less than the reference turn-on voltage, the control chip determines that the turn-on voltage characteristic of the thin-film transistor to be monitored is qualified. After receiving the stop voltage signal, the control chip determines that the turn-on voltage characteristic of the thin-film transistor to be monitored is unqualified.

10. The monitoring method according to claim 7, wherein Determining whether the turn-off voltage characteristic of the thin-film transistor to be monitored is qualified according to the comparison result includes: Compare the turn-off feedback voltage with the reference turn-off voltage. If the turn-off feedback voltage is not greater than the reference turn-off voltage, a first gate turn-off voltage adjustment signal is output to the power management chip. The power management chip does not perform voltage adjustment and determines that the turn-off voltage characteristic of the thin-film transistor to be monitored is qualified. If the turn-off feedback voltage is greater than the reference turn-off voltage, a second gate turn-off voltage adjustment signal is output to the power management chip. The power management chip controls the voltage value output by the gate turn-off signal output terminal to increase or decrease according to the received second gate turn-off voltage adjustment signal, so as to adjust the gate turn-off voltage of the second monitoring thin-film transistor. The control chip determines whether the turn-off voltage characteristic of the thin-film transistor to be monitored is qualified according to the compensation adjustment result.

11. The monitoring method according to claim 10, wherein The control chip determines whether the turn-off voltage characteristic of the thin-film transistor to be monitored is qualified according to the adjustment result, including: When the power management chip receives the second gate turn-off voltage adjustment signal, it controls the voltage value output by the gate turn-off signal output terminal to increase or decrease according to a set step. If the output voltage value after increasing or decreasing again exceeds the range of the power management chip, a stop voltage signal is sent to the control chip. Before receiving the stop voltage signal, if the turn-off feedback voltage is not greater than the reference turn-off voltage, the control chip determines that the turn-off voltage characteristic of the thin-film transistor to be monitored is qualified. After receiving the stop voltage signal, the control chip determines that the turn-off voltage characteristic of the thin-film transistor to be monitored is unqualified.

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