Chamber leak detection method and semiconductor process apparatus

Abstract

This invention provides a chamber leak detection method and semiconductor process equipment, applicable to the field of semiconductor equipment technology. The method includes: identifying a target process chamber from multiple process chambers that meets preset leak detection conditions; identifying a target gas analyzer that is idle; opening an isolation valve between the target gas analyzer and the target process chamber; and closing isolation valves between the target gas analyzer and other process chambers, so that the target gas analyzer is only connected to the target process chamber; activating the target gas analyzer; and, if the target gas analyzer determines that the target process chamber is leaking based on the gas composition within the target process chamber, outputting a first alarm message indicating a leak in the target process chamber. In a semiconductor process equipment comprising multiple process chambers, the multiple process chambers can share a gas analyzer, thus requiring fewer gas analyzers and reducing the cost of the semiconductor process equipment.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a chamber leakage detection method and semiconductor process equipment. Background Technology

[0002] In wafer fabrication, some processes require vacuum conditions, necessitating the maintenance of a vacuum chamber. For example, in the annealing process, the annealing chamber must be kept under vacuum. After the wafer is placed in the annealing chamber, the annealing process can be performed to remove impurities such as moisture and organic matter from the insulating layer.

[0003] Semiconductor process equipment typically includes multiple process chambers. During wafer fabrication, these chambers operate simultaneously to improve processing efficiency. When operating, the interior of each chamber is near a vacuum, surrounded by atmosphere. The chamber contains gas lines, valves, vacuum gauges, lifting actuators, and other components that connect the interior and exterior. Over time, these components may age or loosen, leading to decreased chamber sealing and micro-leakage or even large leaks. If a chamber leaks, the process performed within it will not achieve the desired results. Currently, each process chamber requires a separate gas analyzer. During wafer fabrication, the gas composition entering the chamber is analyzed to determine if leaks have occurred. However, the high cost of gas analyzers, including one for each process chamber, significantly increases the overall cost of semiconductor process equipment. Summary of the Invention

[0004] The technical problem to be solved by the embodiments of the present invention is that the cost of semiconductor process equipment is high when a gas analyzer is configured for each process chamber.

[0005] To address the aforementioned problems, this invention discloses a chamber leakage detection method. This method is applied to semiconductor process equipment, which includes multiple process chambers and at least one gas analyzer. Each process chamber is connected to the gas analyzer via an isolation valve. The method includes:

[0006] The target process chamber that meets the preset leak detection conditions is determined from the plurality of process chambers, and the target gas analyzer that is in an idle state is determined from the at least one gas analyzer;

[0007] Open the isolation valve between the target gas analyzer and the target process chamber, and close the isolation valve between the target gas analyzer and the other process chambers, so that the target gas analyzer is only connected to the target process chamber;

[0008] The target gas analyzer is activated, and if the target gas analyzer determines that the target process chamber is leaking based on the gas composition in the target process chamber, it outputs a first alarm message indicating that the target process chamber is leaking.

[0009] Optionally, determining the target process chamber that meets the preset leak detection conditions from the plurality of process chambers includes:

[0010] When the semiconductor process equipment is in operation, the process chamber in which the target event occurs among the plurality of process chambers is designated as the target process chamber; the target event indicates that the process chamber is started to execute a preset process;

[0011] When the semiconductor process equipment is in standby mode, the process chamber that is not connected to the gas analyzer is selected sequentially from the plurality of process chambers as the target process chamber.

[0012] Optionally, after starting the target gas analyzer, the method further includes:

[0013] The working time of the target gas analyzer is obtained. When the working time reaches a preset time, the isolation valve between the target gas analyzer and the target process chamber is closed to put the target gas analyzer in an idle state. The preset time is not less than the time required for the target gas analyzer to obtain the detection result and not more than the interval between target events in two adjacent process chambers.

[0014] Optionally, the sequential selection of a process chamber not connected to the gas analyzer from the plurality of process chambers as the target process chamber includes:

[0015] Determine the time difference between the historical leak detection time and the current time of the process chamber; the historical leak detection time includes the time when the process chamber was previously connected to the gas analyzer.

[0016] The process chamber with the longest time difference among the plurality of process chambers is selected as the target process chamber.

[0017] Optionally, before opening the isolation valve between the target gas analyzer and the target process chamber, the method further includes:

[0018] The pressure inside the target process chamber is determined to be lower than the safe pressure of the target gas analyzer.

[0019] Optionally, it also includes:

[0020] When the process chamber is connected to the gas analyzer, if the pressure in the process chamber is not lower than the safe pressure of the gas analyzer, the isolation valve between the gas analyzer and the process chamber is closed, and a second alarm message indicating that the pressure exceeds the limit is output.

[0021] Optionally, after the target gas analyzer is connected to the target process chamber, the system further includes:

[0022] Upon receiving a control command to open the isolation valve between the target gas analyzer and the other process chambers, the control command is treated as invalid, and a prompt message indicating an error is output.

[0023] Optionally, it also includes:

[0024] In the event that the isolation valve fails to open and / or close, a third alarm message indicating a malfunction of the isolation valve is output.

[0025] This invention discloses a semiconductor process apparatus, which includes multiple process chambers and at least one gas analyzer. The process chambers are respectively connected to the gas analyzer via isolation valves. The semiconductor process apparatus also includes a controller.

[0026] The controller is used to determine a target process chamber that meets preset leak detection conditions from the plurality of process chambers, and to determine a target gas analyzer that is idle from the at least one gas analyzer; to open the isolation valve between the target gas analyzer and the target process chamber, and to close the isolation valve between the target gas analyzer and the other process chambers, so that the target gas analyzer is only connected to the target process chamber; to start the target gas analyzer, so that if the target gas analyzer determines that the target process chamber is leaking based on the gas composition in the target process chamber, it outputs a first alarm message indicating a chamber leak.

[0027] Optionally, the controller is specifically configured to, when the semiconductor process equipment is in operation, designate the process chamber in which the target event occurs among the plurality of process chambers as the target process chamber; the target event indicates that the process chamber is started to execute a preset process;

[0028] When the semiconductor process equipment is in standby mode, the process chamber that is not connected to the gas analyzer is selected sequentially from the plurality of process chambers as the target process chamber.

[0029] Compared with the prior art, the present invention has the following advantages: It identifies a target process chamber from multiple process chambers that meets preset leak detection conditions, and identifies an idle target gas analyzer from at least one gas analyzer. It opens the isolation valve between the target gas analyzer and the target process chamber, and closes the isolation valves between the target gas analyzer and other process chambers, allowing the target gas analyzer to communicate only with the target process chamber. It then activates the target gas analyzer, and if it determines that the target process chamber is leaking based on the gas composition within the target process chamber, it outputs a first alarm indicating a leak in the target process chamber. In a semiconductor process apparatus including multiple process chambers, a smaller number of gas analyzers, or even just one, can be used. This allows the gas analyzer to communicate with each process chamber in turn, detecting leaks in the connected process chambers. This enables multiple process chambers to share a gas analyzer, reducing the cost of the semiconductor process apparatus. Attached Figure Description

[0030] Figure 1 This embodiment shows a schematic diagram of the structure of a semiconductor process equipment.

[0031] Figure 2 This embodiment shows a schematic diagram of the operation interface of a semiconductor process equipment.

[0032] Figure 3 This embodiment illustrates a wafer transfer schematic diagram.

[0033] Figure 4 This embodiment shows a flowchart of the steps of a chamber leakage detection method.

[0034] Figure 5 This embodiment shows a connection diagram of a gas analyzer.

[0035] Figure 6 This embodiment shows a schematic diagram of the motion flow of a robotic arm.

[0036] Figure 7 This embodiment shows a schematic diagram of the motion flow of another robotic arm.

[0037] Figure 8 A schematic flowchart of a chamber leakage detection method provided in this embodiment is shown. Detailed Implementation

[0038] To make the above-mentioned objectives, features and advantages of the embodiments of the present invention more apparent and understandable, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0039] To facilitate understanding, we will first take the semiconductor process equipment used in the annealing process as an example to briefly introduce the structure and workflow of semiconductor process equipment.

[0040] Reference Figure 1 , Figure 1 This embodiment shows a schematic diagram of a semiconductor process apparatus, which can be used for annealing wafers and includes three process chambers, namely... Figure 1 The diagram shows a first process chamber PM1, a second process chamber PM2, and a third process chamber PM3. This semiconductor process equipment may also include a load port (LP), an equipment front-end module (EFEM), a transmission module (TM), and a load lock (LL). The load port includes... Figure 1 The first loading port LP1, the second loading port LP2, and the third loading port LP3 are shown; the pre-evacuation chambers include a first pre-evacuation chamber LLA, a second pre-evacuation chamber LLB, a third pre-evacuation chamber LLC, and a fourth pre-evacuation chamber LLD. Figure 1 The symbol LL indicates the installation locations of the first pre-vacuum chamber (LLA), the second pre-vacuum chamber (LLB), the third pre-vacuum chamber (LLC), and the fourth pre-vacuum chamber (LLD). The loading port can load wafer pods (foups) to carry the wafers. The EFEM is equipped with a first robotic arm, denoted by the symbol ATR. The EFEM is a negative pressure environment. During wafer transfer, the pre-vacuum chambers are first evacuated to a vacuum state, and then the first robotic arm transfers the wafer from the wafer pod placed in the loading port to the pre-vacuum chamber. The TM is equipped with a second robotic arm, denoted by the symbol VTR. The TM is a vacuum state, and the second robotic arm can transfer the wafer from the pre-vacuum chamber to the process chamber. After the wafer is placed in the process chamber, the chamber door is closed, and the annealing process is initiated to anneal the wafer.

[0041] Reference Figure 2 and Figure 3 , Figure 2 This embodiment shows a schematic diagram of the operation interface of a semiconductor process equipment. Figure 3This embodiment illustrates a wafer transfer diagram. During the annealing process, the first robotic arm (ATR) first transfers the wafer from the wafer cassette loaded on the first loading port LP1 to the second pre-vacuum chamber LLB via steps one and two. Then, the second robotic arm (VTR) transfers the wafer from the second pre-vacuum chamber LLB to the first process chamber PM1 via steps three and four. After annealing in the first process chamber PM1, the second robotic arm (VTR) transfers the wafer back to the second pre-vacuum chamber LLB via steps five and six. Finally, the first robotic arm (ATR) transfers the wafer from the second pre-vacuum chamber LLB back to the wafer cassette loaded on the first loading port LP1 via steps seven and eight, thus completing the wafer annealing process. Figure 2 The numbers corresponding to the middle arrows represent each step. Following this pattern, the wafers loaded at each loading port can be sent to one of the first, second, or third process chambers for annealing. During annealing, if a process chamber leaks, the wafers inside will be scrapped or will fail to meet the preset process requirements.

[0042] It should be noted that the chamber leakage detection method provided in this embodiment of the invention can also be applied to other types of semiconductor process equipment. The specific structure of the semiconductor process equipment and the specific wafer transfer process can be set according to actual needs, and this embodiment does not limit them.

[0043] Reference Figure 4 This diagram illustrates a flowchart of a chamber leakage detection method provided in this embodiment. The method is applied to semiconductor process equipment, which includes multiple process chambers and at least one gas analyzer. Each process chamber is connected to the gas analyzer via an isolation valve. The method may include the following steps:

[0044] Step 401: Determine the target process chamber that meets the preset leak detection conditions from multiple process chambers, and determine the target gas analyzer that is idle from at least one gas analyzer.

[0045] In this embodiment, the chamber leakage detection method can be implemented by the Main Engine Controller (MEC) in the semiconductor process equipment. The semiconductor process equipment includes multiple process chambers and at least one gas analyzer. The gas analyzer is connected to the process chambers via an isolation valve. The gas analyzer can be a residual gas analyzer (RGA), and the isolation valve can be a solenoid valve. The MEC can control the isolation valve between the gas analyzer and only one of the process chambers to be open, allowing the gas analyzer to communicate with that process chamber. At this time, the gas analyzer can analyze the gas composition within the process chamber to determine whether a leak has occurred. For example, if the process chamber is under vacuum during a preset process, and the process gas introduced into the process chamber does not contain oxygen, if the gas analyzer detects the presence of oxygen in the gas within the process chamber, it can be determined that atmospheric oxygen has entered the process chamber, indicating a leak.

[0046] Reference Figure 5 , Figure 5 This embodiment shows a connection diagram of a gas analyzer. Figure 1 and Figure 2 As shown, a gas analyzer can be installed in a semiconductor process equipment, and this gas analyzer is connected to each process chamber via an isolation valve. Figure 5 As shown, the gas analyzer is connected to the first process chamber PM1 via a first pipe 501, to the second annealing chamber PM2 via a second pipe 502, and to the third process chamber PM3 via a third pipe 503. A first isolation valve 504 is installed on the first pipe, a second isolation valve 505 on the second pipe, and a third isolation valve 506 on the third pipe. All three isolation valves can be solenoid valves. When a solenoid valve on one pipe opens and the solenoid valves on the other pipes close, the process chamber connected to that pipe is connected to the gas analyzer. Figure 5 As shown, the gas analyzer includes an analyzer controller 507 and a detection terminal 508, which is connected to a first pipeline, a second pipeline, and a third pipeline, respectively. When the second and third isolation valves are closed and the first isolation valve is open, the detection terminal is only connected to the first process chamber. Simultaneously, since the second and third isolation valves isolate the second and third process chambers respectively, the gas analyzer is unaffected by the gases in the second and third process chambers and can analyze the gas composition in the first process chamber. It should be noted that one or more gas analyzers can be installed in a semiconductor process equipment, and each gas analyzer can employ... Figure 5The method shown connects to the process chambers in the semiconductor process equipment. To reduce the cost of the semiconductor process equipment, the number of gas analyzers can be less than the number of process chambers, such as... Figure 5 As shown, only one gas analyzer can be installed in a semiconductor process equipment.

[0047] In this embodiment, when the semiconductor process equipment is in an operating or standby state, the MEC can identify a target process chamber that meets preset leak detection conditions from multiple process chambers, and identify an idle target gas analyzer from at least one gas analyzer, so as to perform leak detection on the target process chamber using the target gas analyzer. The preset leak detection conditions can be set according to the state of the semiconductor process equipment. When the gas analyzer is idle, it means that the gas analyzer is isolated from all process chambers, that is, all isolation valves connected to the gas analyzer are closed. Specifically, the MEC determines that the semiconductor process equipment has entered an operating state after detecting that a wafer cassette is loaded at the loading port; when no wafer cassette is loaded at the loading port, the semiconductor process equipment is determined to be in a standby state. The MEC determines that the gas analyzer is idle when it detects that all isolation valves connected to the gas analyzer are closed.

[0048] Optionally, the step of determining the target process chamber that meets the preset leak detection conditions from multiple process chambers can be achieved in the following way:

[0049] When the semiconductor process equipment is in operation, the process chamber in which the target event occurs among multiple process chambers is designated as the target process chamber; the target event flag indicates that the process chamber is started to execute the preset process;

[0050] When the semiconductor process equipment is in standby mode, the process chamber that is not connected to the gas analyzer is selected sequentially from multiple process chambers as the target process chamber.

[0051] In one embodiment, the preset side-leak condition can be a target event occurring in the process chamber. The target event can be the event where a wafer is placed into the process chamber, or the event where the chamber door is closed after the wafer is placed in the process chamber. Combined with... Figure 3 and Figure 4 As shown, the target event can be the second robotic arm performing the fourth step, placing the wafer into the first process chamber, or the chamber door of the first process chamber being closed after the wafer is placed in the first process chamber. During the control of the second robotic arm and the chamber door, the MEC can record each action event. After detecting that a wafer cassette is being loaded into the loading port, it determines that the semiconductor process equipment has entered the working state. At this time, if the second robotic arm places the wafer into the first process chamber or the chamber door of the first process chamber is closed, the first process chamber can be identified as the target process chamber.

[0052] like Figure 6 As shown, Figure 6 This embodiment illustrates the motion flow diagram of a robotic arm. When the wafer cassette is initially loaded into the loading port, the first robotic arm places the wafer into the EFEM. At this time, the second robotic arm moves, performing the first step (…). Figure 6 The number 1 corresponding to the middle arrow indicates the first step) where the wafer in the EFEM is placed into the first process chamber, until it passes through the third step ( Figure 6 The number 3 corresponding to the middle arrow indicates the third step. The wafer from the EFEM is placed into the second process chamber, which requires the second step (…). Figure 6 The number 2 corresponding to the middle arrow indicates the second step. The second robotic arm retrieves the wafer from the pre-vacuum chamber. Wafers in the EFEM are replenished by the first robotic arm. After the second robotic arm places the wafer into the process chamber, the MEC can control the closing of the process chamber door and start the process chamber to anneal the wafer. This process continues sequentially, with the second robotic arm placing wafers into each process chamber in sequence and controlling the closing of each process chamber door in sequence before starting the process chamber. When wafers are placed into two adjacent process chambers sequentially and their doors are closed sequentially, the event of a wafer being placed into a process chamber or the event of a chamber door being closed can be set as the target event. Because multiple process chambers operate sequentially, the target events for multiple process chambers occur sequentially; therefore, each process chamber can be selected and determined as the target process chamber in sequence.

[0053] like Figure 7 As shown, Figure 7 This embodiment illustrates another robotic arm's motion flow diagram. In the intermediate stage of the semiconductor process equipment operation, the second robotic arm performs its first step (…). Figure 7 The number 1 corresponding to the middle arrow indicates the first step) removing the annealed wafer from the first process chamber, the second step ( Figure 7 The number 2 corresponding to the middle arrow indicates the second step) where the unannealed wafers taken from the EFEM are placed into the first process chamber, and the third step ( Figure 7The arrow corresponding to number 3 indicates the third step: removing the unannealed wafer from the EFEM; the fourth step: placing the wafer removed from the first process chamber in the first step into the EFEM; the fifth step: removing the annealed wafer from the second process chamber; and the sixth step: placing the wafer removed from the EFEM in the third step into the second process chamber. This process continues, removing annealed wafers from each process chamber and placing them into the EFEM, while placing unannealed wafers from the EFEM into the process chambers for annealing. Simultaneously, after each unannealed wafer is placed into a process chamber by the second robotic arm, the MEC closes the chamber door and controls the process chamber to anneal the placed wafer. Wafers are sequentially placed into two adjacent process chambers, and the chamber doors of the two process chambers are sequentially closed. The event of a wafer being placed into a process chamber or the event of a chamber door being closed can be set as the target event. Since multiple process chambers operate sequentially and the target events of multiple process chambers occur sequentially, each process chamber can be selected and determined as the target process chamber in sequence.

[0054] In one embodiment, when the semiconductor process equipment is in standby mode, the preset leak detection condition can be the leak detection sequence of the process chambers. When the semiconductor process equipment is in standby mode, the MEC can sequentially select process chambers not connected to the gas analyzer from multiple process chambers as the target process chamber. Combined with... Figure 5 As shown, users can pre-set the leak detection sequence of the first process chamber, the second process chamber, and the third process chamber. When the MEC detects that no wafer cell is loaded at the loading port, it determines that the semiconductor process equipment has entered standby mode. At this time, the leak detection sequence can be followed to select a process chamber that is not connected to the gas analyzer as the target process chamber.

[0055] Optionally, the step of sequentially selecting a process chamber not connected to the gas analyzer from multiple process chambers as the target process chamber can be achieved in the following way:

[0056] Determine the time difference between the historical leak detection time and the current time for the process chamber; the historical leak detection time includes the time when the process chamber was previously connected to the gas analyzer;

[0057] Select the process chamber with the longest time difference from multiple process chambers as the target process chamber.

[0058] In one embodiment, when the semiconductor process equipment is in standby mode, a target process chamber can be selected from multiple process chambers based on the leak detection interval of the process chambers. For example... Figure 5As shown, when the MEC controls the first solenoid valve to open, connecting the first process chamber to the gas analyzer, the time when the first solenoid valve opens can be recorded as the historical leak detection time of the first process chamber. Similarly, the historical leak detection times of the second and third process chambers can be recorded. When the semiconductor process equipment is in standby mode, the MEC can obtain the MEC's ​​system time, i.e., the current time, and calculate the time difference between the historical leak detection time and the system time for each process chamber, selecting the process chamber with the longest time difference as the target process chamber. The historical leak detection time can also be the time when the solenoid valve is closed after leak detection. For example, after leak detection in the first process chamber, the time when the first solenoid valve is closed can be recorded as the historical leak detection time of the first process chamber. Alternatively, the historical leak detection time can also be the time when the gas analyzer is started after connecting to the first process chamber. The specific selection of the historical leak detection time can be chosen according to requirements, and this embodiment does not impose any restrictions on this.

[0059] In this embodiment of the invention, the process chamber with the longest time difference between the historical leak detection time and the current time of the process chamber is selected as the target process chamber. This can shorten the interval between two adjacent leak detection processes of each process chamber and enable the gas analyzer to continuously detect leaks in the process chamber, avoiding idle gas analyzer and thus improving the utilization efficiency of the gas analyzer.

[0060] When a semiconductor process equipment includes one or more gas analyzers, the MEC can monitor each solenoid valve connected to the gas analyzer for each gas analyzer. When all solenoid valves connected to the gas analyzer are closed, the gas analyzer is determined to be in an idle state. When any one of the solenoid valves is open, the gas analyzer is determined to be in a working state.

[0061] Step 402: Open the isolation valve between the target gas analyzer and the target process chamber, and close the isolation valve between the target gas analyzer and other process chambers, so that the target gas analyzer is only connected to the target process chamber.

[0062] In this embodiment, after determining the target gas analyzer and the target process chamber, the isolation valve between the target gas analyzer and other process chambers can be closed to isolate the target gas analyzer from the other process chambers, and the isolation valve between the target gas analyzer and the target process chamber can be opened to connect the target gas analyzer and the target process chamber. Combined with... Figure 5As shown, the MEC can control different solenoid valves using different control variables. After determining the first process chamber as the target process chamber, the first control variable corresponding to the first process chamber can be set to 1, and the second control variable corresponding to the second process chamber and the third control variable corresponding to the third process chamber can be set to 0. Setting it to 1 indicates opening the corresponding solenoid valve, and setting it to 0 indicates closing the corresponding solenoid valve. At this time, the control variable corresponding to the first solenoid valve connected to the MEC is set to 1, and the first solenoid valve is opened. The control variables corresponding to the second and third solenoid valves connected to the MEC are set to 0, and the second and third solenoid valves are closed. The gas analyzer is isolated from the second and third process chambers, and the detection end of the gas analyzer is only connected to the first process chamber. Alternatively, the MEC can directly send a start command to the first solenoid valve to control it to open, and send a close command to the second and third solenoid valves to close them. The specific method of the MEC controlling the solenoid valves can include, but is not limited to, the examples above, and this embodiment does not limit this.

[0063] Step 403: Start the target gas analyzer. If the target gas analyzer determines that there is a leak in the target process chamber based on the gas composition in the target process chamber, it will output the first alarm information indicating that there is a leak in the target process chamber.

[0064] In this embodiment, after connecting the target gas analyzer and the target process chamber, the gas analyzer can be activated to analyze the gas composition within the target process chamber to determine whether there is a leak in the target process chamber. For example, the MEC can be connected to a factory automation (FA) module, and the FA connects to... Figure 5 The analyzer controller connection is shown. After the MEC opens the first solenoid valve and closes the second and third solenoid valves, it can send a start command to the FA. The FA can respond to the start command, start the gas analyzer, and begin analyzing the gas composition in the first process chamber. When the analyzer controller detects oxygen in the first process chamber, it can determine that a leak has occurred in the first return chamber. After determining that there is a leak in the first process chamber, the analyzer controller can output a first alarm message.

[0065] The analyzer controller can output a first alarm message via audible and visual alarms to notify the user of a leak in the first process chamber. Alternatively, the analyzer controller can send the first alarm message to the MEC via the FA to notify the MEC of a leak in the first process chamber, or the analyzer controller can send the first alarm message to the host computer to notify the host computer of a leak in the first process chamber. The MEC and / or the host computer will then output alarm messages to alert the user of the leak in the first process chamber. The host computer is a computer or server located at the factory end, which can control all MECs. The specific form of the first alarm message can be set according to requirements, and this embodiment does not limit it.

[0066] It should be noted that when the semiconductor process equipment is in operation, after a target event occurs in the target process chamber, the target gas analyzer can not only analyze the gas composition in the target process chamber to determine whether a leak has occurred, but also analyze other gas components during the execution of the preset process, since the target event indicates that the target process chamber has been started to execute the preset process. Using the above example, during the annealing process in the first process chamber, the target gas analyzer can start analyzing the gas composition in the first process chamber to determine whether there is a leak. Simultaneously, the target gas analyzer can also detect the process gas introduced into the first process chamber to determine whether the process gas introduced into the first process chamber meets the requirements of the annealing process.

[0067] Optionally, after starting the target gas analyzer, the method may further include:

[0068] The operating time of the target gas analyzer is obtained. When the operating time reaches the preset time, the isolation valve between the target gas analyzer and the target process chamber is closed to put the target gas analyzer in an idle state. The preset time is not less than the time required for the target gas analyzer to obtain the detection results, and not more than the interval between target events in two adjacent process chambers.

[0069] The preset duration can be set based on the time it takes for the gas analyzer to acquire detection results and the interval between target events in two adjacent process chambers. For example, if the gas analyzer needs 10 seconds after startup to determine if a process chamber is leaking, the preset duration can be greater than or equal to 10 seconds to allow the gas analyzer to acquire leak detection results after starting leak detection. Simultaneously, if the interval between the event of placing a wafer in the first process chamber and the event of placing a wafer in the second process chamber is 30 seconds, the preset duration can be less than or equal to 30 seconds. This allows the gas analyzer to perform leak detection on the second process chamber even after entering an idle state following leak detection on the first process chamber, thus enabling continuous leak detection on multiple process chambers. The specific value of the preset duration can be set according to requirements; this embodiment does not impose any limitations on this.

[0070] In one embodiment, after activating the target gas analyzer, the MEC can monitor its operating time. After the target gas analyzer obtains a detection result, it can idle the analyzer again to allow for leak detection in another process chamber when the preset leak detection conditions are met. Referring to the above example, the second robotic arm sequentially places wafers into the first, second, and third process chambers. After placing the wafer into the first process chamber, the MEC opens the first solenoid valve, closes the second and third solenoid valves, and activates the gas analyzer to perform leak detection in the first process chamber. After activating the gas analyzer, the MEC can start a timer. When the preset time is reached, the MEC can control the closure of the first solenoid valve, idling the gas analyzer. At this point, the gas analyzer has obtained the leak detection result for the first process chamber. While idling the gas analyzer, it can also control its shutdown. For example, while closing the first solenoid valve, the MEC can send a stop command to the analyzer controller via the FA to stop the gas analyzer. When the second robotic arm places a wafer into the second process chamber, the MEC can close the first solenoid valve and open the second solenoid valve, activating the idle gas analyzer to perform leak testing on the second process chamber. This process can be repeated, allowing the gas analyzer to perform leak testing on each process chamber sequentially during the annealing process.

[0071] In this embodiment, the working time of the gas analyzer can be monitored. When the working time reaches the preset time, the gas analyzer can be put into an idle state. This allows the gas analyzer to be put into an idle state quickly, which is convenient for the gas analyzer to continuously detect leaks in multiple process chambers.

[0072] Optionally, before opening the isolation valve between the target gas analyzer and the target process chamber, the method may further include:

[0073] The pressure inside the target process chamber is determined to be lower than the safe pressure of the target gas analyzer.

[0074] The gas analyzer will be damaged if its detection end is exposed to an environment with a pressure greater than or equal to the safe pressure.

[0075] For example, a pressure gauge is installed in the process chamber to collect the pressure value within the process chamber, and the MEC is connected to the pressure gauge. After determining the target process chamber and the target gas analyzer, the MEC first obtains the pressure value in the target process chamber through the pressure gauge. When the pressure value is greater than or equal to the safe pressure of the gas analyzer, the isolation valve between the target process chamber and the target gas analyzer is prohibited from being opened, and an alarm message is output to prompt the user that the pressure value in the target process chamber exceeds the safe pressure and may damage the gas analyzer. Conversely, when the pressure value is less than the safe pressure, the isolation valve between the target process chamber and the target gas analyzer can be opened, and the target gas analyzer can be started to detect the pressure in the target process chamber.

[0076] In this embodiment of the invention, the isolation valve between the gas analyzer and the process chamber is opened only when the pressure inside the process chamber is determined to be lower than the safe pressure of the gas analyzer. This can prevent the gas analyzer from being in an environment with a pressure higher than the safe pressure value, thereby preventing damage to the gas analyzer.

[0077] In summary, in this embodiment of the invention, a target process chamber meeting preset leak detection conditions is determined from multiple process chambers, and an idle target gas analyzer is determined from at least one gas analyzer. The isolation valve between the target gas analyzer and the target process chamber is opened, while the isolation valves between the target gas analyzer and other process chambers are closed, allowing the target gas analyzer to communicate only with the target process chamber. The target gas analyzer is then activated, and if a leak is determined in the target process chamber based on the gas composition within the chamber, it outputs a first alarm indicating a leak in the target process chamber. In a semiconductor process apparatus comprising multiple process chambers, the gas analyzer can communicate with each process chamber in turn to detect leaks in the connected chambers. This allows multiple process chambers to share a gas analyzer, thus reducing the number of gas analyzers required in the semiconductor process apparatus and lowering its cost.

[0078] Meanwhile, by controlling the gas analyzer to connect to one of the process chambers in the semiconductor process equipment in turn, and performing leak detection on the process chamber connected to the gas analyzer, the number of gas analyzers in the semiconductor process equipment can be reduced as much as possible, thereby reducing the cost of the semiconductor process equipment.

[0079] Optionally, the method may further include:

[0080] When the process chamber is connected to the gas analyzer, if the pressure in the process chamber is not lower than the safe pressure of the gas analyzer, the isolation valve between the gas analyzer and the process chamber will be closed, and a second alarm message indicating that the pressure exceeds the limit will be output.

[0081] In one embodiment, the MEC can close the isolation valve between the process chamber and the gas analyzer when the pressure inside the process chamber exceeds the safe pressure of the gas analyzer, thus preventing damage to the gas analyzer. Referring to the above example, after the gas analyzer is connected to the first process chamber, the MEC can monitor the pressure inside the first process chamber. When the pressure inside the first process chamber exceeds the safe pressure of the gas analyzer, it can close the first solenoid valve to isolate the first process chamber and the gas analyzer, preventing damage to the gas analyzer. Alternatively, it can stop the first process chamber and depressurize it. Simultaneously, the MEC can output a second alarm message via audible and visual alarms, alerting the user that the pressure value inside the first process chamber exceeds the limit and may damage the gas analyzer. Alternatively, the MEC can send a second alarm message to a host computer, which will then output an alarm message alerting the user that the pressure inside the first process chamber has exceeded the limit. The specific form of the second alarm message can be set according to requirements; this embodiment does not limit this.

[0082] In this embodiment of the invention, when the process chamber is connected to the gas analyzer, the pressure inside the process chamber is monitored. When the pressure inside the process chamber exceeds the safe pressure of the gas analyzer, the isolation valve between the process chamber and the gas analyzer is closed to avoid damaging the gas analyzer.

[0083] Optionally, after the target gas analyzer is connected to the target process chamber, the method may further include:

[0084] Upon receiving a control command to open the isolation valve between the target gas analyzer and other process chambers, the control command is treated as invalid, and a prompt message indicating an error is output.

[0085] In practical applications, during the process of the target gas analyzer analyzing the gas composition in the target process chamber, the user may accidentally open the isolation valve between the target gas analyzer and other process chambers. At this time, the gas analyzer is connected to multiple gas analyzers at the same time, and cannot accurately analyze the gas composition in the target process chamber.

[0086] Referring to the above example, after the MEC opens the first solenoid valve between the gas analyzer and the first process chamber, connecting the first process chamber to the gas analyzer, if it receives a control command from the host computer to open the second or third solenoid valve, the MEC can treat this control command as invalid and refuse to execute it. This prevents the opening of the second and third solenoid valves, thus avoiding connection between the gas analyzer and the second and third process chambers. This prevents gas in the second and third process chambers from interfering with the gas analyzer's detection of the first process chamber. Simultaneously, the MEC can output a prompt message via audible and visual alarms, indicating that the user command is incorrect and cannot be executed. Alternatively, the MEC can send a prompt message to the host computer, which will then output a prompt message indicating that the user command is incorrect and cannot be executed. The specific form of the prompt message can be set according to requirements; this embodiment does not limit this.

[0087] In this embodiment of the invention, after the target gas analyzer is connected to the target process chamber, it is possible to prevent the target gas analyzer from being connected to other process chambers, thereby avoiding interference from gases in other process chambers on the target gas analyzer's detection of the target process chamber.

[0088] Optionally, the method may further include:

[0089] In the event of a failure to open and / or close the isolation valve, a third alarm message indicating a malfunction of the isolation valve is output.

[0090] In one embodiment, if the isolation valve fails to open or close during the opening or closing process, an alarm message indicating a malfunction of the isolation valve can be output to prompt the user to address the issue promptly and avoid erroneous results from gas analysis. Referring to the above example, if the MEC detects that the second solenoid valve is not closed after sending a closing command to it, it can output a third alarm message via audible and visual alarms to alert the user that the second solenoid valve is malfunctioning. Alternatively, if the MEC detects that the first solenoid valve is not open after sending an opening command to it, it can output a third alarm message to alert the user that the first solenoid valve is malfunctioning. The specific form of the third alarm message can be configured, and this embodiment does not limit this.

[0091] In this embodiment of the invention, an alarm message is output when the isolation valve fails to open and / or close, which can prevent the gas analyzer from obtaining incorrect detection results. For example, if the first solenoid valve fails to open after being opened, the gas analyzer cannot communicate with the first process chamber. In this case, if the first process chamber leaks, the gas analyzer cannot detect the leak because it cannot access the oxygen inside the first process chamber. This would lead to the first process chamber processing the wafer under leaky conditions, resulting in wafers that do not meet process requirements.

[0092] Reference Figure 8 This diagram illustrates a flow chart of a chamber leak detection method provided in this embodiment. This method can be executed by a MEC (Multi-access Edge Computing). During the control of semiconductor process equipment, the MEC enters a working state after confirming that a wafer cassette is loaded into the loading port; otherwise, it enters a standby state. In the working state, the process chamber where the target event occurred is selected as the target process chamber. In the standby state, the process chamber with the longest time difference between the historical leak detection time and the current time is selected as the target process chamber. Further, an idle target gas analyzer is identified. Before connecting the target gas analyzer and the target process chamber, it is first determined whether the pressure inside the target process chamber is lower than the safe pressure. If it is lower than the safe pressure, the isolation valve between the target process chamber and the target gas analyzer is opened, and the isolation valves between other process chambers and the target gas analyzer are closed. The target gas analyzer starts leak detection in the target process chamber. After determining that the target process chamber is leaking, the target gas analyzer sends a notification message to the host computer, informing the host computer of the target process chamber leak. At this time, the host computer can notify the MEC of the target process chamber leak and control the MEC to stop the target process chamber. During leak detection in the target process chamber, the target gas analyzer starts a timer. If the preset time is reached, the analyzer stops (isolating the analyzer from the process chamber during this process) and records the historical leak detection time of the chamber. The analyzer can also continue leak detection even if the preset time has not been reached. Figure 8 As shown, after the semiconductor process equipment is started, the MEC can also monitor the pressure in each process chamber. If the pressure in any process chamber is greater than or equal to the safe pressure, an alarm message is output, and the process chamber with the pressure higher than the safe pressure is controlled to stop. The specific operating procedures of the MEC and the gas analyzer can be referred to the example above, and will not be repeated here.

[0093] This invention also provides a semiconductor process apparatus, which includes multiple process chambers and at least one gas analyzer. The process chambers are connected to the gas analyzer via isolation valves. The semiconductor process apparatus also includes a controller, such as the MEC mentioned above.

[0094] The controller is used to identify a target process chamber that meets preset leak detection conditions from multiple process chambers, and to identify a target gas analyzer that is idle from at least one gas analyzer; to open the isolation valve between the target gas analyzer and the target process chamber, and to close the isolation valve between the target gas analyzer and other process chambers, so that the target gas analyzer is only connected to the target process chamber; to start the target gas analyzer, so that if the target gas analyzer determines that the target process chamber is leaking based on the gas composition in the target process chamber, it outputs a first alarm message indicating that the chamber is leaking.

[0095] Optionally, the controller is specifically used to, when the semiconductor process equipment is in operation, designate the process chamber in which the target event occurs among multiple process chambers as the target process chamber; the target event flag indicates that the process chamber is started to execute a preset process;

[0096] When the semiconductor process equipment is in standby mode, the process chamber that is not connected to the gas analyzer is selected sequentially from multiple process chambers as the target process chamber.

[0097] Optionally, the controller is also used to acquire the operating time of the target gas analyzer, and when the operating time reaches the preset time, to close the isolation valve between the target gas analyzer and the target process chamber so that the target gas analyzer is in an idle state; the preset time is not less than the time required for the target gas analyzer to acquire the detection results, and not more than the interval between target events in two adjacent process chambers.

[0098] Optionally, the controller is also specifically used to determine the time difference between the historical leak detection time of the process chamber and the current time; the historical leak detection time includes the time when the process chamber was last connected to the gas analyzer;

[0099] Select the process chamber with the longest time difference from multiple process chambers as the target process chamber.

[0100] Optionally, the controller is also used to determine that the pressure in the target process chamber is lower than the safe pressure of the target gas analyzer before opening the isolation valve between the target gas analyzer and the target process chamber.

[0101] Optionally, the controller is also configured to, when the process chamber is connected to the gas analyzer, close the isolation valve between the gas analyzer and the process chamber if the pressure in the process chamber is not lower than the safe pressure of the gas analyzer, and output a second alarm message indicating that the pressure exceeds the limit.

[0102] Optionally, the controller is also configured to, after the target gas analyzer is connected to the target process chamber, upon receiving a control command to open the isolation valve between the target gas analyzer and other process chambers, treat the control command as an invalid command and output a prompt message indicating an error in the command.

[0103] Optionally, the controller is also used to output a third alarm message indicating a malfunction of the isolation valve in the event that the isolation valve fails to open and / or close.

[0104] The controller in the semiconductor process equipment can be the MEC mentioned in the example above, or it can be other types of controllers. This embodiment does not limit this.

[0105] This application provides a readable storage medium on which a program or instruction is stored. When the program or instruction is executed by a processor, it implements the steps of the above-mentioned chamber leakage detection method.

[0106] This application provides a chip, which includes a processor and a communication interface. The communication interface and the processor are coupled. The processor is used to run programs or instructions to implement the steps of the above chamber leakage detection method.

[0107] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0108] Although preferred embodiments of the present invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the present invention.

[0109] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or mobile device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or mobile device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or mobile device that includes said element.

[0110] The chamber leakage detection method provided by the embodiments of the present invention has been described in detail above. Specific examples have been used to illustrate the principle and implementation of the embodiments of the present invention. The description of the above embodiments is only for the purpose of helping to understand the method and core idea of ​​the embodiments of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation and application scope based on the idea of ​​the embodiments of the present invention. Therefore, the content of this specification should not be construed as a limitation on the embodiments of the present invention.

Claims

1. A chamber leak detection method, comprising: The application is applied to a semiconductor process equipment including multiple process chambers and at least one gas analyzer, and the process chambers are connected with the gas analyzer through isolation valves respectively. The method comprises: determining a target process chamber meeting preset leakage detection conditions from the multiple process chambers, and determining a target gas analyzer in an idle state from the at least one gas analyzer; opening the isolation valve between the target gas analyzer and the target process chamber, and closing the isolation valve between the target gas analyzer and other process chambers, so that the target gas analyzer only communicates with the target process chamber; starting the target gas analyzer, so that the target gas analyzer outputs first alarm information indicating that the target process chamber leaks when the target gas analyzer determines that the target process chamber leaks according to the gas composition containing process gas in the target process chamber; the method further comprises: when the semiconductor process equipment is in a working state, taking a process chamber in which a target event occurs as the target process chamber; the target event indicates that the process chamber is started to perform a preset process; when the semiconductor process equipment is in a standby state, sequentially selecting a process chamber not communicating with the gas analyzer from the multiple process chambers as the target process chamber.

2. The method of claim 1, wherein, after the target gas analyzer is started, the method further comprises: acquiring a working time length of the target gas analyzer, and closing the isolation valve between the target gas analyzer and the target process chamber when the working time length reaches a preset time length, so that the target gas analyzer is in an idle state; the preset time length is not less than a time length required by the target gas analyzer to acquire a detection result and not more than an interval time length between target events of adjacent two process chambers.

3. The method of claim 1, wherein, the method further comprises: determining a time difference between a historical leakage detection time of the process chamber and a current time; the historical leakage detection time comprises a time when the process chamber is connected with the gas analyzer last time; selecting a process chamber with the longest time difference from the multiple process chambers as the target process chamber.

4. The method of claim 1, wherein, before the isolation valve between the target gas analyzer and the target process chamber is opened, the method further comprises: determining that the pressure in the target process chamber is lower than a safe pressure of the target gas analyzer.

5. The method of claim 1, wherein, the method further comprises: when the process chamber communicates with the gas analyzer, if the pressure in the process chamber is not less than a safe pressure of the gas analyzer, closing the isolation valve between the gas analyzer and the process chamber, and outputting second alarm information indicating that the pressure is out of limit.

6. The method of claim 1, wherein, after the target gas analyzer communicates with the target process chamber, the method further comprises: In a case that a control instruction of opening an isolation valve between the target gas analyzer and other process chambers is received, the control instruction is regarded as an invalid instruction, and prompt information representing an instruction error is outputted.

7. The method according to any one of claims 1 to 6, characterized in that, Further comprising: In a case that the opening and / or closing of the isolation valve fails, third alarm information indicating an isolation valve failure is outputted.

8. A semiconductor process apparatus characterized by comprising: The semiconductor process equipment includes a plurality of process chambers and at least one gas analyzer, and the process chambers are respectively connected with the gas analyzer through isolation valves; the semiconductor process equipment further includes a controller; The controller is configured to determine a target process chamber meeting a preset leakage detection condition from the plurality of process chambers, and determine a target gas analyzer in an idle state from the at least one gas analyzer; open an isolation valve between the target gas analyzer and the target process chamber, and close isolation valves between the target gas analyzer and other process chambers, so that the target gas analyzer is only in communication with the target process chamber; start the target gas analyzer, so that the target gas analyzer outputs first alarm information indicating a chamber leakage in a case that leakage of the target process chamber is determined according to a gas composition containing process gas in the target process chamber; The controller is specifically configured to select a process chamber in which a target event occurs from the plurality of process chambers as the target process chamber in a case that the semiconductor process equipment is in a working state; The target event indicates that the process chamber is started to perform a preset process; In a case that the semiconductor process equipment is in a standby state, process chambers not in communication with the gas analyzer are sequentially selected from the plurality of process chambers as the target process chamber.

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