Spin-polarized current generator and method for realizing half-metal based on anti-ferromagnetic material

Abstract

The application provides a spin-polarized current generator and a half-metallic material based on a anti-ferromagnetic material, and aims at solving the technical problem that the macroscopic ferromagnetic property of the existing two-dimensional layered material half-metallic material implementation method seriously affects the performance of the spin electronic device. In the application, non-magnetic metal atoms are deposited on the anti-ferromagnetic material, the spin of the partial atoms of the anti-ferromagnetic material on the non-magnetic insulating substrate is reversed, the original electron spin degeneracy of the anti-ferromagnetic material is destroyed, the anti-ferromagnetic material is converted into a ferromagnetic material, 100% spin polarization at the Fermi surface is realized, the anti-ferromagnetic material realizes the half-metallic material, and a voltage is applied on both sides of the non-magnetic insulating substrate, the spin-polarized electrons on the non-magnetic insulating substrate move in a direction, the output of the spin-polarized current is formed, the influence of the macroscopic ferromagnetic property on the spin electronic device is effectively avoided, and the technical difficulties that the two-dimensional material is cut into a strip and the doping atoms are positioned in experiments are avoided.

Description

Technical Field

[0001] This invention relates to the technical field of currents and devices with magnetic / antiferromagnetic materials or structures and their applications, and particularly to a spin-polarized current generator and a method for realizing a half-metal based on antiferromagnetic materials. Background Technology

[0002] Two-dimensional materials refer to materials in which electrons can move freely (planar motion) only in two dimensions at the nanoscale (1-100nm). The controllability of their spin degrees of freedom has attracted in-depth research in the field of spintronics. Half-metals are materials in which electrons in only one spin channel can conduct electricity, while electrons in the other spin channel are insulators. These materials can generate fully spin-polarized currents and are widely used in spintronic devices. Therefore, realizing the application of half-metal corresponding spintronic devices based on two-dimensional materials is of great significance.

[0003] Existing methods for realizing half-metals based on two-dimensional materials mainly include: first, relying on transition metal magnetic atoms, applying a ferromagnetic substrate, and applying a macroscopic magnetic field; second, fabricating two-dimensional materials into strips, selectively positioning and modifying atoms at the edges of the strips, doping, or performing single-sided asymmetric hydrogenation and nitriding, etc.

[0004] In the first method, transition metal magnetic atoms, ferromagnetic substrates, and macroscopic magnetic fields all introduce macroscopic ferromagnetism, making it susceptible to the influence of external metal devices and materials. This is extremely detrimental to the practical application of half-metal materials, and the introduction of macroscopic ferromagnetism into spintronic devices severely affects their performance. In the second method, single-sided hydrogenation and nitriding, or fabricating two-dimensional materials into strips and performing asymmetric atomic doping or positioning modification at the edges, present significant challenges. It is difficult to ensure that the doped atoms are positioned precisely as intended, and it is also difficult to guarantee that one side of the layered material is completely hydrogenated while the other side is completely free of hydrogen or nitrogen atom adsorption. Therefore, these techniques are experimentally and technically difficult to implement.

[0005] In summary, current methods for realizing semimetals based on two-dimensional layered materials either suffer from macroscopic ferromagnetism or face technical difficulties, and these shortcomings need to be improved. Summary of the Invention

[0006] To address the technical problem that existing methods for realizing half-metals from two-dimensional layered materials suffer from macroscopic ferromagnetism, severely impacting the performance of spintronic devices, this invention proposes a spin-polarized current generator and a method for realizing half-metals based on antiferromagnetic materials. By depositing non-magnetic metal atoms on an antiferromagnetic material, some atoms of the antiferromagnetic material on the non-magnetic insulating substrate undergo spin inversion, disrupting the original electron spin degeneracy of the antiferromagnetic material. This transforms the antiferromagnetic material into a ferromagnetic material, achieving 100% spin polarization at the Fermi level, thus realizing a half-metal from the antiferromagnetic material. Furthermore, by applying a voltage across the non-magnetic insulating substrate, the spin-polarized electrons on the non-magnetic insulating substrate undergo directional movement, generating a spin-polarized current output. This effectively avoids the influence of macroscopic ferromagnetism on spintronic devices and avoids the experimental difficulties of cutting two-dimensional materials into strips and positioning doped atoms.

[0007] To achieve the above objectives, the technical solution of the present invention is implemented as follows:

[0008] A spin-polarized current generator includes a non-magnetic insulating substrate, an antiferromagnetic material, a non-magnetic metal atom implantation deposition mechanism, and a voltage generation mechanism. The antiferromagnetic material is placed on the non-magnetic insulating substrate, the non-magnetic metal atom implantation deposition mechanism is located above the non-magnetic insulating substrate, and the voltage generation mechanism is located on both sides of the non-magnetic insulating substrate.

[0009] Furthermore, the non-magnetic insulating substrate is a MgO substrate, a CaO substrate, a ZnO substrate, a CuO substrate, or an Al2O3 substrate.

[0010] Furthermore, the antiferromagnetic material is a layered antiferromagnetic two-dimensional material, which is silicene, phosphorene, or graphene.

[0011] Furthermore, the nonmagnetic metal atom implantation deposition mechanism deposits nonmagnetic metal atoms on a nonmagnetic insulating substrate, with a deposition concentration of 1 / 144 to 1 / 36 atom / Si. Preferably, the deposition concentration of nonmagnetic metal atoms is 1 / 100 to 1 / 64 atom / Si.

[0012] Furthermore, the non-magnetic metal atoms are Li, Na, K, Be, Mg, Ca, or Al.

[0013] Furthermore, the non-magnetic metal atom implantation deposition apparatus includes a vapor phase depositor and an atom implanter, with the atom implanter located above the vapor phase depositor and connected to it.

[0014] Furthermore, the voltage generating mechanism includes electrode I, electrode II, a power supply, and a circuit switch. Electrode I and electrode II are located on opposite sides of the non-magnetic insulating substrate. The negative terminal of the power supply is connected to electrode I through the circuit switch, and the positive terminal of the power supply is connected to electrode II.

[0015] A method for realizing a half-metal based on antiferromagnetic materials includes the following steps:

[0016] S1. Non-magnetic metal atoms are added to the vapor deposition apparatus using an atom implanter;

[0017] S2. Non-magnetic metal atoms are deposited onto a non-magnetic insulating substrate using a vapor deposition apparatus.

[0018] S3. Control the deposition concentration of non-magnetic metal atoms in step S2 to realize a half-metal using layered antiferromagnetic two-dimensional material on a non-magnetic insulating substrate.

[0019] Furthermore, the non-magnetic metal atoms in step S1 are Li, Na, K, Be, Mg, Ca or Al, the layered antiferromagnetic two-dimensional material in step S2 is silicene, phosphorene or graphene, and the non-magnetic insulating substrate is MgO substrate, CaO substrate, ZnO substrate, CuO substrate or Al2O3 substrate.

[0020] Furthermore, in step S3, the concentration of non-magnetic metal atoms deposited is 1 / 144 to 1 / 36 atom / Si. Preferably, the deposition concentration of non-magnetic metal atoms is 1 / 100 to 1 / 64 atom / Si.

[0021] The beneficial effects of this invention are:

[0022] 1. When a spin-polarized current needs to be output, this invention uses a vapor deposition apparatus and an atom implanter to deposit non-magnetic metal atoms onto an antiferromagnetic material. Electrons from the non-magnetic metal atoms penetrate into the antiferromagnetic material on a non-magnetic insulating substrate, causing the spin direction of the surface electrons in the antiferromagnetic material to reverse, resulting in spin polarization. At this time, a voltage is generated in the horizontal direction above the non-magnetic insulating substrate using two electrodes, which causes the electrons to move in a directional manner, generating a spin-polarized current output. This avoids the drawbacks of introducing macroscopic ferromagnetism into spintronic devices, and also avoids the technical difficulties of cutting antiferromagnetic materials into strips and positioning doped atoms. Furthermore, because the spin polarization effect of the output spin-polarized current is good, it can improve the carrier concentration and mobility of spintronic devices, while reducing energy loss, lowering costs, and improving efficiency.

[0023] 2. In this invention, after non-magnetic metal atoms are deposited onto an antiferromagnetic material, the electrons doped by the non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but are locally distributed on the upper surface of the layered antiferromagnetic two-dimensional material. Therefore, the influence of the electrons doped by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material is different. It mainly affects the spin arrangement of electrons on the upper surface, and its influence on neighboring atoms is much stronger than that on non-neighboring atoms; while its influence on the electron spin arrangement of the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the local influence of the injected electrons. The electrons of the layered antiferromagnetic two-dimensional material can achieve complete spin polarization near the Fermi level, thereby enabling the antiferromagnetic material to become a half-metal. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of the electron spin direction of the antiferromagnetic material on a non-magnetic insulating substrate before non-magnetic atomic deposition according to the present invention.

[0026] Figure 2 This is a schematic diagram showing the electron spin direction of the antiferromagnetic material on a non-magnetic insulating substrate after non-magnetic atomic deposition according to the present invention.

[0027] Figure 3 This is a schematic diagram of the spin current output of the present invention.

[0028] Figure 4 This is the density of states diagram of Embodiment 4 of the present invention.

[0029] Figure 5 This is the density of states diagram of Embodiment 5 of the present invention.

[0030] Figure 6 This is the density of states diagram of Embodiment 6 of the present invention.

[0031] In the figure, 1-non-magnetic insulating substrate, 2-atom implanter, 3-vapor deposition apparatus, 4-electrode I, 5-electrode II, 6-power supply, 7-circuit switch. Detailed Implementation

[0032] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0033] Example 1

[0034] A spin-polarized current generator, such as Figure 1 As shown, the system includes a non-magnetic insulating substrate 1, an antiferromagnetic material, a non-magnetic metal atom implantation and deposition mechanism, and a voltage generation mechanism. The antiferromagnetic material is placed on the non-magnetic insulating substrate 1, the non-magnetic metal atom implantation and deposition mechanism is located above the non-magnetic insulating substrate 1, and the voltage generation mechanism is located on both sides of the non-magnetic insulating substrate 1. When a spin-polarized current needs to be generated, non-magnetic metal atoms are implanted and deposited onto the antiferromagnetic material through the non-magnetic metal atom implantation and deposition mechanism. The spin direction of the surface electrons of the antiferromagnetic material on the non-magnetic insulating substrate 1 is reversed, resulting in spin polarization. At this time, a voltage is generated in the horizontal direction above the non-magnetic insulating substrate 1 using the voltage generation mechanism, which causes the electrons to move in a specific direction, generating the output of a spin-polarized current.

[0035] It is worth noting that in this embodiment, non-magnetic metal atoms are implanted into the surface of the antiferromagnetic material. The electrons doped by these non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire antiferromagnetic material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons doped by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the antiferromagnetic material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the antiferromagnetic material is disrupted by the localized influence of the implanted electrons, leading to... Figure 3 As shown, electrons achieve complete spin polarization near the Fermi level, and under the action of a horizontal voltage, a spin-polarized current can be output.

[0036] It is worth noting that spin degeneracy means that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, so that the band structure and the density of states of electrons do not exhibit spin polarization. The degree to which this spin degeneracy is opened is mainly affected by the concentration of deposited nonmagnetic metal atoms.

[0037] It is worth noting that this embodiment also provides a method for realizing a half-metal based on an antiferromagnetic material, including the following steps:

[0038] S1. Non-magnetic metal atoms are added to the vapor phase deposition apparatus 3 through the atom implanter 2.

[0039] S2. Non-magnetic metal atoms are deposited onto a non-magnetic insulating substrate 1 using a vapor deposition apparatus 3.

[0040] S3. Control the deposition concentration of non-magnetic metal atoms in step S2 to realize a half-metal using layered antiferromagnetic two-dimensional material on non-magnetic insulating substrate 1.

[0041] In this embodiment, non-magnetic metal atoms are implanted into the surface of the antiferromagnetic material. The electrons doped by these non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire antiferromagnetic material, but rather locally distributed on the upper surface of the layered antiferromagnetic two-dimensional material. Therefore, the influence of the electrons doped by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the antiferromagnetic material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the antiferromagnetic material is disrupted by the localized influence of the implanted electrons, leading to... Figure 3 As shown, electrons achieve complete spin polarization near the Fermi level, thus enabling the realization of a half-metal through antiferromagnetic materials.

[0042] Example 2

[0043] A spin-polarized current generator, with the same structure as Embodiment 1, includes a non-magnetic insulating substrate 1, an antiferromagnetic material, a non-magnetic metal atom implantation and deposition mechanism, and a voltage generation mechanism. The antiferromagnetic material is placed on the non-magnetic insulating substrate 1, the non-magnetic metal atom implantation and deposition mechanism is located above the non-magnetic insulating substrate 1, and the voltage generation mechanism is located on both sides of the non-magnetic insulating substrate 1. When spin-polarized current needs to be generated, non-magnetic metal atoms are implanted and deposited onto the antiferromagnetic material through the non-magnetic metal atom implantation and deposition mechanism. The spin direction of the surface electrons of the antiferromagnetic material on the non-magnetic insulating substrate 1 is reversed, generating a spin polarization phenomenon. At this time, a voltage is generated in the horizontal direction above the non-magnetic insulating substrate 1 using the voltage generation mechanism, thereby causing the electrons to move in a directional manner and generating the output of the spin-polarized current.

[0044] It is worth noting that in this embodiment, non-magnetic metal atoms are injected into the surface of the antiferromagnetic two-dimensional material via vapor deposition. The electrons doped by these non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons doped by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons, and the electrons achieve complete spin polarization near the Fermi level. Under a horizontal voltage, a spin-polarized current can be output.

[0045] It is worth noting that spin degeneracy means that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, so that the band structure and the density of states of electrons do not exhibit spin polarization. The degree to which this spin degeneracy is opened is mainly affected by the concentration of deposited nonmagnetic metal atoms.

[0046] Example 3

[0047] A method for realizing a half-metal based on antiferromagnetic materials includes the following steps:

[0048] S1. Non-magnetic metal atoms are added to the vapor phase deposition apparatus 3 through the atom implanter 2.

[0049] S2. Non-magnetic metal atoms are deposited onto a non-magnetic insulating substrate 1 using a vapor deposition apparatus 3.

[0050] S3. Control the deposition concentration of non-magnetic metal atoms in step S2 to realize a half-metal using layered antiferromagnetic two-dimensional material on non-magnetic insulating substrate 1.

[0051] In this embodiment, non-magnetic metal atoms are injected into the surface of the antiferromagnetic two-dimensional material using a vapor deposition method. The electrons doped by the non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons doped by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on nearest-neighbor atoms than on non-near-neighbor atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons, and the electrons achieve complete spin polarization near the Fermi level, thereby realizing a half-metal through the antiferromagnetic material.

[0052] It is worth noting that spin degeneracy means that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, so that the band structure and the density of states of electrons do not exhibit spin polarization. The degree to which this spin degeneracy is opened is mainly affected by the concentration of deposited nonmagnetic metal atoms.

[0053] Example 4

[0054] A spin-polarized current generator is disclosed in this embodiment, which has the same structure as in Embodiment 1. When spin-polarized current needs to be generated, non-magnetic metal atoms are injected and deposited onto an antiferromagnetic material using a non-magnetic metal atom injection deposition mechanism. The spin direction of the surface electrons of the antiferromagnetic material on the non-magnetic insulating substrate 1 is reversed, resulting in spin polarization. At this time, a voltage generation mechanism generates a voltage in the horizontal direction above the non-magnetic insulating substrate 1, thereby causing the electrons to move in a directional manner and generating the output of spin-polarized current.

[0055] Furthermore, the non-magnetic insulating substrate 1 is an MgO substrate; the antiferromagnetic material is a layered antiferromagnetic two-dimensional material, which is silicene; the non-magnetic metal atom implantation deposition mechanism deposits non-magnetic metal atoms on the non-magnetic insulating substrate 1, and the concentration of non-magnetic metal atom deposition is 1 / 100 atom / Si; the non-magnetic metal atom concentration is Mg. The atom / Si ratio, i.e., the number of non-magnetic metal atoms infiltrated into each Si atom, is used to describe the deposition concentration of non-magnetic metal atoms.

[0056] It is worth noting that in this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons doped by these non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons doped by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons. Electrons achieve complete spin polarization near the Fermi level, and the polarized spin electrons can achieve spin polarization current output under the horizontal voltage generated between electrodes I4 and II5.

[0057] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and electronic density of states do not exhibit spin polarization. The degree to which this spin degeneracy is activated is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is around 1 / 100 atom / Si, such as... Figure 4 As shown, electrons with spin-up orbitals exhibit metallic conductivity at the Fermi level, while electrons with spin-down orbitals exhibit semiconductor properties at the Fermi level. Therefore, non-magnetic metal atoms deposited on the non-magnetic insulating substrate 1 at this concentration can achieve 100% spin polarization at the Fermi level, facilitating the output of spin-polarized current.

[0058] It is worth noting that this embodiment also provides a method for realizing a half-metal based on an antiferromagnetic material, including the following steps:

[0059] S1. Non-magnetic metal atoms are added to the vapor deposition apparatus 3 via an atom implanter 2. Specifically, the non-magnetic metal atoms are Mg.

[0060] S2. Non-magnetic metal atoms are deposited onto a non-magnetic insulating substrate 1 using a vapor deposition apparatus 3. Specifically, the non-magnetic insulating substrate 1 is an MgO substrate.

[0061] S3. Controlling the deposition concentration of non-magnetic metal atoms in step S2, a layered antiferromagnetic two-dimensional material on the non-magnetic insulating substrate 1 is realized as a half-metal. Specifically, the layered antiferromagnetic two-dimensional material in step S2 is silicene.

[0062] In this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons introduced by the non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons introduced by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons, and the electrons achieve complete spin polarization near the Fermi level.

[0063] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and electronic density of states do not exhibit spin polarization. The degree to which this spin degeneracy is activated is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is around 1 / 100 atom / Si, such as... Figure 4 As shown, electrons with spin-up orbitals exhibit metallic conductivity at the Fermi level, while electrons with spin-down orbitals exhibit semiconductor properties at the Fermi level. Therefore, non-magnetic metal atoms can be deposited on a non-magnetic insulating substrate 1 at this concentration, thus realizing a half-metal through a layered antiferromagnetic two-dimensional material.

[0064] Example 5

[0065] A spin-polarized current generator is disclosed in this embodiment, which has the same structure as in Embodiment 1. When spin-polarized current needs to be generated, non-magnetic metal atoms are injected and deposited onto an antiferromagnetic material using a non-magnetic metal atom injection deposition mechanism. The spin direction of the surface electrons of the antiferromagnetic material on the non-magnetic insulating substrate 1 is reversed, resulting in spin polarization. At this time, a voltage generation mechanism generates a voltage in the horizontal direction above the non-magnetic insulating substrate 1, thereby causing the electrons to move in a directional manner and generating the output of spin-polarized current.

[0066] Furthermore, the non-magnetic insulating substrate 1 is a CaO substrate; the antiferromagnetic material is a layered antiferromagnetic two-dimensional material, which is silicene; the non-magnetic metal atom implantation deposition mechanism deposits non-magnetic metal atoms on the non-magnetic insulating substrate 1, and the concentration of the non-magnetic metal atom deposition is 1 / 80 atom / Si; the non-magnetic metal atom is Mg.

[0067] It is worth noting that in this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons doped by these non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons doped by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons. Electrons achieve complete spin polarization near the Fermi level, and the polarized spin electrons can achieve spin polarization current output under the horizontal voltage generated between electrodes I4 and II5.

[0068] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and electronic density of states do not exhibit spin polarization. The degree to which this spin degeneracy is activated is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is around 1 / 80 atom / Si, such as... Figure 5As shown, electrons with spin-up orbitals exhibit metallic conductivity at the Fermi level, while electrons with spin-down orbitals exhibit semiconductor properties at the Fermi level. Therefore, non-magnetic metal atoms deposited on the non-magnetic insulating substrate 1 at this concentration can achieve 100% spin polarization at the Fermi level, facilitating the output of spin-polarized current.

[0069] Example 6

[0070] A method for realizing a half-metal based on antiferromagnetic materials includes the following steps:

[0071] S1. Non-magnetic metal atoms are added to the vapor deposition apparatus 3 via an atom implanter 2. Specifically, the non-magnetic metal atoms are Mg.

[0072] S2. Non-magnetic metal atoms are deposited onto a non-magnetic insulating substrate 1 using a vapor deposition apparatus 3. Specifically, the non-magnetic insulating substrate 1 is a ZnO substrate.

[0073] S3. Controlling the deposition concentration of non-magnetic metal atoms in step S2, a layered antiferromagnetic two-dimensional material on the non-magnetic insulating substrate 1 is realized as a half-metal. Specifically, the layered antiferromagnetic two-dimensional material in step S2 is silicene.

[0074] In this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons introduced by the non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons introduced by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons, and the electrons achieve complete spin polarization near the Fermi level.

[0075] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and electronic density of states do not exhibit spin polarization. The degree to which this spin degeneracy is activated is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is around 1 / 64 atoms / Si, such as... Figure 6 As shown, electrons with spin-up orbitals exhibit metallic conductivity at the Fermi level, while electrons with spin-down orbitals exhibit semiconductor properties at the Fermi level. Therefore, non-magnetic metal atoms can be deposited on a non-magnetic insulating substrate 1 at this concentration, thus realizing a half-metal through a layered antiferromagnetic two-dimensional material.

[0076] Example 7

[0077] A spin-polarized current generator is disclosed in this embodiment, which has the same structure as in Embodiment 1. When spin-polarized current needs to be generated, non-magnetic metal atoms are injected and deposited onto an antiferromagnetic material using a non-magnetic metal atom injection deposition mechanism. The spin direction of the surface electrons of the antiferromagnetic material on the non-magnetic insulating substrate 1 is reversed, resulting in spin polarization. At this time, a voltage generation mechanism generates a voltage in the horizontal direction above the non-magnetic insulating substrate 1, thereby causing the electrons to move in a directional manner and generating the output of spin-polarized current.

[0078] Furthermore, the non-magnetic insulating substrate 1 is a CuO substrate; the antiferromagnetic material is a layered antiferromagnetic two-dimensional material, which is phosphorene; the non-magnetic metal atom implantation deposition mechanism deposits non-magnetic metal atoms on the non-magnetic insulating substrate 1, and the concentration of the non-magnetic metal atom deposition is 1 / 144 atom / Si; the non-magnetic metal atom is Li.

[0079] It is worth noting that in this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons doped by these non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons doped by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons. Electrons achieve complete spin polarization near the Fermi level, and the polarized spin electrons can achieve spin polarization current output under the horizontal voltage generated between electrodes I4 and II5.

[0080] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and the density of states of electrons do not exhibit spin polarization. The degree to which this spin degeneracy is activated is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is at 1 / 144 atoms / Si, electrons in the spin-up orbital exhibit metallic conductivity at the Fermi level, while electrons in the spin-down orbital exhibit semiconductor properties at the Fermi level. Therefore, at this concentration, the deposition of nonmagnetic metal atoms on a nonmagnetic insulating substrate 1 can achieve 100% spin polarization at the Fermi level, facilitating the output of spin-polarized current.

[0081] It is worth noting that this embodiment also provides a method for realizing a half-metal based on an antiferromagnetic material, including the following steps:

[0082] S1. Non-magnetic metal atoms are added to the vapor deposition apparatus 3 via an atom implanter 2. Specifically, the non-magnetic metal atoms are Li.

[0083] S2. Non-magnetic metal atoms are deposited onto a non-magnetic insulating substrate 1 using a vapor deposition apparatus 3. Specifically, the non-magnetic insulating substrate 1 is a CuO substrate.

[0084] S3. Controlling the deposition concentration of non-magnetic metal atoms in step S2, a layered antiferromagnetic two-dimensional material on the non-magnetic insulating substrate 1 is used to realize a half-metal. Specifically, the layered antiferromagnetic two-dimensional material in step S2 is phosphorene.

[0085] In this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons introduced by the non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons introduced by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons, and the electrons achieve complete spin polarization near the Fermi level.

[0086] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and the density of states of electrons do not exhibit spin polarization. The degree to which this spin degeneracy is opened is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is at 1 / 144 atoms / Si, electrons in the spin-up orbital exhibit metallic conductivity at the Fermi level, while electrons in the spin-down orbital exhibit semiconductor properties at the Fermi level. Therefore, nonmagnetic metal atoms are deposited on a nonmagnetic insulating substrate 1 at this concentration, realizing a half-metal through a layered antiferromagnetic two-dimensional material.

[0087] Example 8

[0088] A spin-polarized current generator is disclosed in this embodiment, which has the same structure as in Embodiment 1. When spin-polarized current needs to be generated, non-magnetic metal atoms are injected and deposited onto an antiferromagnetic material using a non-magnetic metal atom injection deposition mechanism. The spin direction of the surface electrons of the antiferromagnetic material on the non-magnetic insulating substrate 1 is reversed, resulting in spin polarization. At this time, a voltage generation mechanism generates a voltage in the horizontal direction above the non-magnetic insulating substrate 1, thereby causing the electrons to move in a directional manner and generating the output of spin-polarized current.

[0089] Furthermore, the non-magnetic insulating substrate 1 is an Al2O3 substrate; the antiferromagnetic material is a layered antiferromagnetic two-dimensional material, which is graphene; the non-magnetic metal atom implantation deposition mechanism deposits non-magnetic metal atoms on the non-magnetic insulating substrate 1, and the concentration of the non-magnetic metal atom deposition is 1 / 36 atom / Si; the non-magnetic metal atom is Na.

[0090] It is worth noting that in this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons doped by these non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons doped by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons. Electrons achieve complete spin polarization near the Fermi level, and the polarized spin electrons can achieve spin polarization current output under the horizontal voltage generated between electrodes I4 and II5.

[0091] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and the density of states of electrons do not exhibit spin polarization. The degree to which this spin degeneracy is activated is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is at 1 / 36 atom / Si, electrons in the spin-up orbital exhibit metallic conductivity at the Fermi level, while electrons in the spin-down orbital exhibit semiconductor properties at the Fermi level. Therefore, at this concentration, the deposition of nonmagnetic metal atoms on the nonmagnetic insulating substrate 1 can achieve 100% spin polarization at the Fermi level, facilitating the output of spin-polarized current.

[0092] It is worth noting that this embodiment also provides a method for realizing a half-metal based on an antiferromagnetic material, including the following steps:

[0093] S1. Non-magnetic metal atoms are added to the vapor deposition apparatus 3 via an atom implanter 2. Specifically, the non-magnetic metal atom is Na.

[0094] S2. Non-magnetic metal atoms are deposited onto a non-magnetic insulating substrate 1 using a vapor deposition apparatus 3. Specifically, the non-magnetic insulating substrate 1 is an Al2O3 substrate.

[0095] S3. Controlling the deposition concentration of non-magnetic metal atoms in step S2, a layered antiferromagnetic two-dimensional material on the non-magnetic insulating substrate 1 is used to realize a half-metal. Specifically, the layered antiferromagnetic two-dimensional material in step S2 is graphene.

[0096] In this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons introduced by the non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons introduced by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons, and the electrons achieve complete spin polarization near the Fermi level.

[0097] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and the density of states of electrons do not exhibit spin polarization. The degree to which this spin degeneracy is opened is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is at 1 / 36 atom / Si, electrons in the spin-up orbital exhibit metallic conductivity at the Fermi level, while electrons in the spin-down orbital exhibit semiconductor properties at the Fermi level. Therefore, nonmagnetic metal atoms are deposited on a nonmagnetic insulating substrate 1 at this concentration, realizing a half-metal through a layered antiferromagnetic two-dimensional material.

[0098] Example 9

[0099] A spin-polarized current generator is disclosed in this embodiment, which has the same structure as in Embodiment 1. When spin-polarized current needs to be generated, non-magnetic metal atoms are injected and deposited onto an antiferromagnetic material using a non-magnetic metal atom injection deposition mechanism. The spin direction of the surface electrons of the antiferromagnetic material on the non-magnetic insulating substrate 1 is reversed, resulting in spin polarization. At this time, a voltage generation mechanism generates a voltage in the horizontal direction above the non-magnetic insulating substrate 1, thereby causing the electrons to move in a directional manner and generating the output of spin-polarized current.

[0100] Furthermore, the non-magnetic insulating substrate 1 is an MgO substrate; the antiferromagnetic material is a layered antiferromagnetic two-dimensional material, which is silicene; the non-magnetic metal atom implantation deposition mechanism deposits non-magnetic metal atoms on the non-magnetic insulating substrate 1, and the concentration of the non-magnetic metal atom deposition is 1 / 100 atom / Si; the non-magnetic metal atom is K.

[0101] It is worth noting that in this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons doped by these non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons doped by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons. Electrons achieve complete spin polarization near the Fermi level, and the polarized spin electrons can achieve spin polarization current output under the horizontal voltage generated between electrodes I4 and II5.

[0102] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and the density of states of electrons do not exhibit spin polarization. The degree to which this spin degeneracy is activated is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is at 1 / 100 atom / Si, electrons in the spin-up orbital exhibit metallic conductivity at the Fermi level, while electrons in the spin-down orbital exhibit semiconductor properties at the Fermi level. Therefore, at this concentration, the deposition of nonmagnetic metal atoms on a nonmagnetic insulating substrate 1 can achieve 100% spin polarization at the Fermi level, facilitating the output of spin-polarized current.

[0103] Example 10

[0104] A method for realizing a half-metal based on antiferromagnetic materials includes the following steps:

[0105] S1. Non-magnetic metal atoms are added to the vapor deposition apparatus 3 via an atom implanter 2. Specifically, the non-magnetic metal atoms are Be.

[0106] S2. Non-magnetic metal atoms are deposited onto a non-magnetic insulating substrate 1 using a vapor deposition apparatus 3. Specifically, the non-magnetic insulating substrate 1 is an MgO substrate.

[0107] S3. Controlling the deposition concentration of non-magnetic metal atoms in step S2, a layered antiferromagnetic two-dimensional material on the non-magnetic insulating substrate 1 is realized as a half-metal. Specifically, the layered antiferromagnetic two-dimensional material in step S2 is silicene.

[0108] In this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons introduced by the non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons introduced by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons, and the electrons achieve complete spin polarization near the Fermi level.

[0109] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and the density of states of electrons do not exhibit spin polarization. The degree to which this spin degeneracy is opened is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is at 1 / 100 atom / Si, electrons in the spin-up orbital exhibit metallic conductivity at the Fermi level, while electrons in the spin-down orbital exhibit semiconductor properties at the Fermi level. Therefore, nonmagnetic metal atoms can be deposited on a nonmagnetic insulating substrate 1 at this concentration to achieve a half-metal through a layered antiferromagnetic two-dimensional material.

[0110] Example 11

[0111] A spin-polarized current generator is disclosed in this embodiment, which has the same structure as in Embodiment 1. When spin-polarized current needs to be generated, non-magnetic metal atoms are injected and deposited onto an antiferromagnetic material using a non-magnetic metal atom injection deposition mechanism. The spin direction of the surface electrons of the antiferromagnetic material on the non-magnetic insulating substrate 1 is reversed, resulting in spin polarization. At this time, a voltage generation mechanism generates a voltage in the horizontal direction above the non-magnetic insulating substrate 1, thereby causing the electrons to move in a directional manner and generating the output of spin-polarized current.

[0112] Furthermore, the non-magnetic insulating substrate 1 is a CaO substrate; the antiferromagnetic material is a layered antiferromagnetic two-dimensional material, which is phosphorene; the non-magnetic metal atom implantation deposition mechanism deposits non-magnetic metal atoms on the non-magnetic insulating substrate 1, and the concentration of the non-magnetic metal atom deposition is 1 / 80 atom / Si; the non-magnetic metal atom is Ca.

[0113] It is worth noting that in this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons doped by these non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons doped by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons. Electrons achieve complete spin polarization near the Fermi level, and the polarized spin electrons can achieve spin polarization current output under the horizontal voltage generated between electrodes I4 and II5.

[0114] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and the density of states of electrons do not exhibit spin polarization. The degree to which this spin degeneracy is activated is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is at 1 / 80 atom / Si, electrons in the spin-up orbital exhibit metallic conductivity at the Fermi level, while electrons in the spin-down orbital exhibit semiconductor properties at the Fermi level. Therefore, at this concentration, the deposition of nonmagnetic metal atoms on a nonmagnetic insulating substrate 1 can achieve 100% spin polarization at the Fermi level, facilitating the output of spin-polarized current.

[0115] Example 12

[0116] A method for realizing a half-metal based on antiferromagnetic materials includes the following steps:

[0117] S1. Non-magnetic metal atoms are added to the vapor deposition apparatus 3 via an atom implanter 2. Specifically, the non-magnetic metal atoms are Al.

[0118] S2. Non-magnetic metal atoms are deposited onto a non-magnetic insulating substrate 1 using a vapor deposition apparatus 3. Specifically, the non-magnetic insulating substrate 1 is a ZnO substrate.

[0119] S3. Controlling the deposition concentration of non-magnetic metal atoms in step S2, a layered antiferromagnetic two-dimensional material on the non-magnetic insulating substrate 1 is used to realize a half-metal. Specifically, the layered antiferromagnetic two-dimensional material in step S2 is graphene.

[0120] In this embodiment, non-magnetic metal atoms are injected into the surface of the layered antiferromagnetic two-dimensional material using a vapor deposition method. The electrons introduced by the non-magnetic metal atoms, under the electrostatic force of the non-magnetic metal ions, are not uniformly distributed throughout the entire layered antiferromagnetic two-dimensional material, but rather locally distributed on the upper surface. Therefore, the influence of the electrons introduced by the non-magnetic metal atoms on the electron spin distribution of the upper and lower surfaces of the layered antiferromagnetic two-dimensional material differs. It primarily affects the spin arrangement of electrons on the upper surface, with a much stronger influence on neighboring atoms than on non-neighboring atoms; while its influence on the spin arrangement of electrons on the lower surface is minimal. Thus, the spin degeneracy of the original antiferromagnetic structure of the layered antiferromagnetic two-dimensional material is broken due to the localized influence of the injected electrons, and the electrons achieve complete spin polarization near the Fermi level.

[0121] It is worth noting that spin degeneracy refers to the fact that the two spin channels of an antiferromagnetic material are completely equivalent and indistinguishable, to the point that the band structure and the density of states of electrons do not exhibit spin polarization. The degree to which this spin degeneracy is opened is mainly affected by the concentration of deposited nonmagnetic metal atoms. When this concentration is at 1 / 64 atoms / Si, electrons in the spin-up orbital exhibit metallic conductivity at the Fermi level, while electrons in the spin-down orbital exhibit semiconductor properties at the Fermi level. Therefore, nonmagnetic metal atoms are deposited on a nonmagnetic insulating substrate 1 at this concentration, realizing a half-metal through a layered antiferromagnetic two-dimensional material.

[0122] It is worth noting that within the doping concentration range of nonmagnetic metal atoms in Examples 4 to 12 of the present invention, electrons with spin-up orbitals exhibit metallic conductivity at the Fermi level, while electrons with spin-down orbitals exhibit semiconductor properties at the Fermi level. Therefore, half-metals can be achieved when the concentration of nonmagnetic metal atom deposition is between 1 / 144 and 1 / 36 atom / Si. The concentration range of deposited nonmagnetic atoms is relatively wide and does not depend on a particular deposition concentration, resulting in good performance and strong practical operability. Furthermore, the spin polarization effect and the half-metal effect achieved at the Fermi level are best when the deposition concentration of nonmagnetic metal atoms is between 1 / 100 and 1 / 64 atom / Si.

[0123] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method of implementing a half-metal based on an antiferromagnetic material, characterized in that, The process is performed using a spin polarized current generator, which includes a non-magnetic insulating substrate (1), an antiferromagnetic material, a non-magnetic metal atom implantation deposition mechanism, and a voltage generation mechanism. The antiferromagnetic material is placed on the non-magnetic insulating substrate (1), the non-magnetic metal atom implantation deposition mechanism is located above the non-magnetic insulating substrate (1), and the voltage generation mechanism is located on both sides of the non-magnetic insulating substrate (1). The non-magnetic metal atom implantation deposition mechanism includes a vapor phase deposition apparatus (3) and an atom implanter (2). The atom implanter (2) is located above the vapor phase deposition apparatus (3) and is connected to the vapor phase deposition apparatus (3). The method for realizing a semimetal based on antiferromagnetic materials includes the following steps: S1. Non-magnetic metal atoms are added into the vapor deposition apparatus (3) through an atom implanter (2); S2. Non-magnetic metal atoms are deposited onto a non-magnetic insulating substrate (1) using a vapor deposition apparatus (3); S3. Control the deposition concentration of non-magnetic metal atoms in step S2, and realize a half-metal by layered antiferromagnetic two-dimensional material on non-magnetic insulating substrate (1); The non-magnetic metal atoms in step S1 are Li, Na, K, Be, Mg, Ca or Al, the layered antiferromagnetic two-dimensional material in step S2 is silicene, phosphorene or graphene, and the non-magnetic insulating substrate (1) is MgO substrate, CaO substrate, ZnO substrate, CuO substrate or Al2O3 substrate. In step S3, the concentration of non-magnetic metal atom deposition is 1 / 144 to 1 / 36 atom / Si.

2. The method of claim 1, wherein the antiferromagnetic material is a half-metal. The voltage generating mechanism includes electrode I (4), electrode II (5), power supply (6) and circuit switch (7). Electrode I (4) and electrode II (5) are located on both sides of the non-magnetic insulating substrate (1). The negative terminal of the power supply (6) is connected to electrode I (4) through the circuit switch (7), and the positive terminal of the power supply (6) is connected to electrode II (5).

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