Processing device and processing method

Abstract

The present invention relates to a processing apparatus and a processing method. A technique capable of expanding an adjustment range of in-plane distribution of film thickness is provided. A processing apparatus of a technical solution of the present disclosure includes a processing container having a substantially cylindrical shape, an exhaust slit being formed in a side wall, and a plurality of gas nozzles disposed in a vertical direction along an inner side of the side wall of the processing container, the plurality of gas nozzles being symmetrically arranged with respect to a straight line connecting a center of the processing container and a center of the exhaust slit, the plurality of gas nozzles respectively ejecting the same processing gas into the processing container.

Description

Technical Field

[0001] This disclosure relates to processing apparatus and processing methods. Background Technology

[0002] A film-forming apparatus is known to have a gas dispersion nozzle that extends vertically along the inner sidewall of a cylindrical processing container and has a plurality of gas ejection holes formed along a length corresponding to the wafer support area of ​​the wafer boat (see, for example, Patent Documents 1 and 2).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2011-135044

[0004] Patent Document 2: Japanese Patent Application Publication No. 2016-181545 Summary of the Invention

[0005] The problem the invention aims to solve

[0006] This disclosure provides a technique for adjusting the in-plane distribution of film thickness.

[0007] Solution for solving the problem

[0008] The processing apparatus of one of the technical solutions disclosed herein includes: a processing container having a generally cylindrical shape and an exhaust slit formed on its side wall; and a plurality of gas nozzles extending vertically along the inner side of the side wall of the processing container, the plurality of gas nozzles being symmetrically arranged with respect to a line connecting the center of the processing container and the center of the exhaust slit, the plurality of gas nozzles respectively spraying the same processing gas into the processing container.

[0009] The effects of the invention

[0010] According to this disclosure, the adjustment range of the in-plane distribution of film thickness can be expanded. Attached Figure Description

[0011] Figure 1 This is a schematic diagram illustrating an example of a processing apparatus for an implementation method.

[0012] Figure 2 This is a schematic diagram showing an example of the configuration of a gas nozzle.

[0013] Figure 3 This is a graph showing the film formation results when Si2H6 is supplied from a gas nozzle.

[0014] Figure 4 This is a graph showing the film formation results when Si2H6 is supplied from three gas nozzles.

[0015] Figure 5This is a graph showing the experimental results of adjusting the film thickness distribution by changing the flow rate distribution.

[0016] Figure 6 This is a graph showing the simulation results of adjusting the film thickness distribution by changing the flow distribution.

[0017] Figure 7 This is a graph showing the simulation results of adjusting the film thickness distribution by changing the flow distribution.

[0018] Figure 8 This is a graph showing the simulation results of adjusting the film thickness distribution by changing the flow distribution.

[0019] Figure 9 This is a graph showing the simulation results of adjusting the film thickness distribution by changing the flow distribution.

[0020] Figure 10 This is a schematic diagram showing another example of the configuration of a gas nozzle.

[0021] Figure 11 This is a schematic diagram showing another example of the configuration of gas nozzles. Detailed Implementation

[0022] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the drawings, the same or corresponding components or parts are labeled with the same or corresponding reference numerals, and repeated descriptions are omitted.

[0023] [Processing device]

[0024] Reference Figure 1 and Figure 2 Here is an example of a processing apparatus for an embodiment. Figure 1 This is a schematic diagram illustrating an example of a processing apparatus for an implementation method. Figure 2 This is a diagram illustrating an example of the configuration of a gas nozzle.

[0025] The processing device 1 includes a processing container 10, a gas supply unit 30, an exhaust unit 50, a heating unit 70, and a control unit 90.

[0026] The processing container 10 includes an inner tube 11 and an outer tube 12. The inner tube 11, also referred to as the inner layer tube, is formed into a generally cylindrical shape with a top and an open lower end. The top 11a of the inner tube 11 is, for example, flat. The outer tube 12, also referred to as the outer layer tube, is formed into a generally cylindrical shape with a top and an open lower end that covers the outside of the inner tube 11. The inner tube 11 and the outer tube 12 are arranged coaxially to form a double-tube structure. The inner tube 11 and the outer tube 12 are, for example, made of a heat-resistant material such as quartz.

[0027] On one side of the inner tube 11, a receiving portion 13 for accommodating a gas nozzle is formed along its length direction (vertical direction). For the receiving portion 13, a portion of the side wall of the inner tube 11 protrudes outward to form a protrusion 14, and the receiving portion 13 is formed inside the protrusion 14.

[0028] Facing the receiving section 13, a rectangular exhaust slit 15 is formed on the side wall opposite to the inner tube 11 along its length (vertical direction). The exhaust slit 15 exhausts the gas inside the inner tube 11. The length of the exhaust slit 15 is formed to extend upward and downward in the same or longer direction as the boat 16 described later.

[0029] The processing container 10 houses the boat 16. The boat 16 holds multiple substrates at intervals in the vertical direction, making them approximately horizontal. The substrates may be, for example, semiconductor wafers (hereinafter referred to as "wafer W").

[0030] The lower end of the processing container 10 is supported by a generally cylindrical manifold 17, for example, made of stainless steel. A flange 18 is formed at the upper end of the manifold 17, and the lower end of the outer tube 12 is disposed on and supported by the flange 18. A sealing member 19, such as an O-ring, is placed between the lower end of the outer tube 12 and the flange 18 to make the interior of the outer tube 12 airtight.

[0031] A ring-shaped support portion 20 is provided on the inner wall of the upper part of the manifold 17. The support portion 20 supports the lower end of the inner tube 11. A cover 21 is airtightly installed at the opening at the lower end of the manifold 17 by means of a sealing member 22 such as an O-ring. The cover 21 airtightly seals the opening at the lower end of the processing container 10, i.e., the opening of the manifold 17. The cover 21 is, for example, made of stainless steel.

[0032] A rotating shaft 24, supporting the boat 16 for rotation, is provided through the center of the cover 21 by means of a magnetic fluid seal 23. The lower part of the rotating shaft 24 is supported by the arm 25a of the lifting mechanism 25, which is composed of a boat lifting mechanism, so that it can rotate freely.

[0033] A rotating plate 26 is provided at the upper end of the rotating shaft 24. A boat 16 for holding the wafer W is placed on the rotating plate 26 by means of a quartz insulated stage 27. Therefore, by raising and lowering the lifting mechanism 25, the cover 21 and the boat 16 move up and down together, allowing the boat 16 to be inserted and removed relative to the processing container 10.

[0034] The gas supply unit 30 is located in the manifold 17. The gas supply unit 30 has a plurality of (e.g., 7) gas nozzles 31 to 37.

[0035] Multiple gas nozzles 31-37 are arranged in a row circumferentially within the receiving portion 13 of the inner tube 11. Each gas nozzle 31-37 is disposed within the inner tube 11 along its length and is supported such that its base is bent in an L-shape and passes through the manifold 17. Multiple gas holes 31a-37a are provided at predetermined intervals along the length of each gas nozzle 31-37. The gas holes 31a-37a are, for example, oriented towards the center C side (wafer W side) of the inner tube 11.

[0036] Gas nozzles 31, 34, and 37 eject raw material gas introduced from a raw material gas supply source (not shown) via a gas supply pipe (not shown) through multiple gas holes 31a, 34a, and 37a towards the wafer W in a generally horizontal direction. That is, gas nozzles 31, 34, and 37 eject the same raw material gas into the inner tube 11. A flow controller (not shown), such as a mass flow controller, is connected to the gas supply pipe between the raw material gas supply source and the gas nozzles 31, 34, and 37. The flow controller varies the flow rate of the raw material gas ejected from the gas nozzles 31, 34, and 37. The raw material gas may, for example, be a gas containing silicon (Si) or metal. The multiple gas nozzles 31, 34, and 37 have, for example, the same inner diameter. The multiple gas holes 31a, 34a, and 37a are respectively located within the same height range as the boat 16, or within a range wider than the height range of the boat 16 in the vertical direction. Thus, gas nozzles 31, 34, and 37 eject raw material gas into the same height range within the inner tube 11. In other words, for a single wafer W, the same raw material gas is supplied from multiple gas nozzles 31, 34, and 37. The gas nozzles 31, 34, and 37 are symmetrically arranged with respect to the straight line L connecting the center C of the inner tube 11 and the center of the exhaust slit 15. In this embodiment, gas nozzle 34 is arranged on the straight line L, and gas nozzles 31 and 37 are symmetrically arranged with respect to the straight line L. Furthermore, the gas nozzles 31, 34, and 37 may also be configured to be connected to a purge gas supply source (not shown) and eject purge gas into the inner tube 11.

[0037] Gas nozzles 32, 33, 35, and 36 eject various gases, different from the raw material gases, from multiple gas holes 32a, 33a, 35a, and 36a toward the wafer W in a generally horizontal direction. The flow rates of the various gases ejected from gas nozzles 32, 33, 35, and 36 are controlled by a flow controller (not shown) such as a mass flow controller. These gases include, for example, reactive gases, etching gases, and purge gases. Reactive gases are gases used to react with the raw material gases to generate reaction products; for example, they may be gases containing oxygen or nitrogen. Etching gases are gases used to etch various films; for example, they may be gases containing halogens such as fluorine, chlorine, or bromine. Purge gases are gases used to purge residual raw material gases and reactive gases within the processing container 10; for example, they may be inactive gases.

[0038] The exhaust section 50 exhausts the gas that exits from the inner tube 11 via the exhaust slit 15 and from the gas outlet 28 via the space P1 between the inner tube 11 and the outer tube 12. The gas outlet 28 is formed on the upper side wall of the manifold 17 and above the support 20. An exhaust passage 51 is connected to the gas outlet 28. A pressure regulating valve 52 and a vacuum pump 53 are sequentially provided in the exhaust passage 51, enabling the exhaust of gas from the processing container 10.

[0039] A heating element 70 is disposed around the outer tube 12. The heating element 70 is, for example, disposed on a base plate (not shown). The heating element 70 has a generally cylindrical shape so as to cover the outer tube 12. The heating element 70 includes, for example, a heating element for heating the wafer W inside the processing container 10.

[0040] The control unit 90 controls the operation of each part of the processing device 1. The control unit 90 may be, for example, a computer. The computer program that performs the operation of each part of the processing device 1 is stored in a storage medium. The storage medium may be, for example, a floppy disk, optical disk, hard disk, flash memory, DVD, etc.

[0041] [Handling Method]

[0042] As an example of the processing method for implementing the method, the use of Figure 1 and Figure 2 The processing apparatus 1 shown is used to form a silicon oxide film on a wafer W using atomic layer deposition (ALD).

[0043] First, the control unit 90 controls the lifting mechanism 25 to send the boat 16 holding multiple wafers W into the processing container 10, and uses the cover 21 to airtightly seal the opening at the lower end of the processing container 10, thereby sealing it.

[0044] Next, the control unit 90 repeats the cycle including the process of supplying raw material gas S1, the process of purging S2, the process of supplying reaction gas S3, and the process of purging S4 a predetermined number of times, thereby forming a silicon oxide film with a desired film thickness on multiple wafers W.

[0045] In process S1, silicon-containing gas, which serves as raw material gas, is ejected from gas nozzles 31, 34, and 37 into the processing container 10, thereby causing the silicon-containing gas to be adsorbed onto multiple wafers W.

[0046] In step S2, residual silicon-containing gases and the like are removed from the processing container 10 by repeatedly performing gas replacement and vacuum suction cyclic purging. Gas replacement is the action of supplying purging gas into the processing container 10 from at least one of the seven gas nozzles 31 to 37. Vacuum suction is the action of venting the processing container 10 by using a vacuum pump 53.

[0047] In process S3, an oxidizing gas, which is a reaction gas, is ejected into the processing container 10 from at least one of the gas nozzles 32, 33, 35, and 36, thereby using the oxidizing gas to oxidize the silicon raw material gas adsorbed on the multiple wafers W.

[0048] In step S4, repeated gas replacement and vacuum suction are used to purge the remaining oxidizing gases in the processing container 10. Step S4 can be the same as step S2.

[0049] After the ALD cycle, including processes S1 to S4, is repeated a predetermined number of times, the control unit 90 controls the lifting mechanism 25 to send the boat 16 out of the processing container 10.

[0050] As another example of the processing method for implementing the method, the use of Figure 1 and Figure 2 The processing apparatus 1 shown is used to form a silicon film on a wafer W by chemical vapor deposition (CVD).

[0051] First, the control unit 90 controls the lifting mechanism 25 to send the boat 16 holding multiple wafers W into the processing container 10, and uses the cover 21 to airtightly seal the opening at the lower end of the processing container 10, thereby sealing it.

[0052] Next, the control unit 90 ejects silicon-containing gas as raw material gas from gas nozzles 31, 34, and 37 into the processing container 10, thereby forming a silicon film with a desired film thickness on the wafer W.

[0053] Next, the control unit 90 controls the lifting mechanism 25 to send the boat 16 out of the processing container 10.

[0054] According to the embodiment described above, three gas nozzles 31, 34, and 37 that eject the same raw material gas into the inner tube 11 are symmetrically arranged with respect to the straight line L connecting the center C of the inner tube 11 and the center of the exhaust slit 15. Furthermore, each gas nozzle 31, 34, and 37 is configured to allow for variation in the flow rate of the raw material gas ejected from each nozzle. Therefore, by varying the flow rate distribution of the raw material gas ejected from the three gas nozzles 31, 34, and 37, the concentration distribution of reactive species generated by the thermal decomposition of the raw material gas on the wafer W can be controlled. As a result, the film thickness distribution of the silicon oxide film formed on the wafer W can be adjusted.

[0055] In particular, by changing the flow rate distribution of the raw material gas ejected from each of the gas nozzles 31, 34, 37 while setting the flow rate of the raw material gas ejected from a pair of gas nozzles 31, 34, 37 that are symmetrically arranged relative to the straight line L to the same flow rate, the adjustment range of the film thickness distribution can be expanded.

[0056] [Example]

[0057] (Example 1)

[0058] In Example 1, using Figure 1 and Figure 2 The processing apparatus 1 shown forms a silicon film on wafer W using CVD. In Example 1, Si2H6 is supplied from one gas nozzle 34 or from three gas nozzles 31, 34, and 37. Furthermore, the flow rate of Si2H6 supplied from one gas nozzle 34 and the total flow rate of Si2H6 supplied from the three gas nozzles 31, 34, and 37 are set to the same flow rate. More specifically, the flow rate of Si2H6 supplied from one gas nozzle 34 is set to 350 sccm, and the flow rates of Si2H6 supplied from the three gas nozzles 31, 34, and 37 are each set to 117 sccm. Additionally, other conditions are set to be the same for both the conditions for supplying Si2H6 from one gas nozzle 34 and the conditions for supplying Si2H6 from the three gas nozzles 31, 34, and 37.

[0059] Figure 3 This is a graph showing the film formation results when Si2H6 is supplied from a single gas nozzle 34. Figure 3 In the middle, from left to right, are the wafer diagram, film thickness, and in-plane uniformity of the silicon films formed on the wafer W located in the TOP region, CTR region, and BTM region. Figure 3 The upper layer represents the result of film deposition when the wafer W is stopped rotating. Figure 3The lower layer represents the result of film deposition when the wafer W is rotated with the vertical direction as the axis of rotation. The TOP region, CTR region, and BTM region refer to the upper, central, and lower parts of the boat 16 in the height direction, respectively. The wafer diagram shows the in-plane distribution of the silicon film thickness formed on the wafer W. The 6 o'clock direction indicates the orientation of the gas nozzle 34, and the 12 o'clock direction indicates the orientation of the exhaust slit 15.

[0060] like Figure 3 As shown in the upper layer, when Si2H6 is supplied from a gas nozzle 34, and the wafer W is not rotating, the silicon film thickness is thinnest at the 6 o'clock position and increases in a fan shape, while becoming thickest at the 12 o'clock position. This is because the deposition of the silicon film is caused by the concentration of reactive species generated by the thermal decomposition of the raw material gas. It is assumed that the raw material gas ejected from the gas nozzle 34 gradually heats up and undergoes thermal decomposition, thus increasing the film thickness. Furthermore, when the gas consumption on the wafer W is high, or when the raw material gas is plasmaized by excitation at the gas nozzle 34, the film thickness is also thickest on the gas nozzle 34 side, while the film thickness on the exhaust slit 15 side thins due to gas consumption and deactivation. In any case, the film thickness increases or decreases from the position of the gas nozzle 34 supplying the raw material gas.

[0061] like Figure 3 As shown in the lower layer, when the wafer W is rotated, the film thickness distribution is such that the film thickness at the edge of the wafer is thicker than the film thickness at the center of the wafer.

[0062] Figure 4 This graph shows the film formation results when Si₂H₆ is supplied from three gas nozzles 31, 34, and 37. Figure 4 In the middle, from left to right, are the wafer diagram, film thickness, and in-plane uniformity of the silicon films formed on the wafer W located in the TOP region, CTR region, and BTM region. Figure 4 The upper layer represents the result of film deposition when the wafer W is stopped rotating. Figure 4 The lower layer represents the result of film deposition when the wafer W is rotated with the vertical direction as the axis of rotation. The TOP region, CTR region, and BTM region refer to the upper, central, and lower parts of the boat 16 in the height direction, respectively. The wafer diagram shows the in-plane distribution of the silicon film thickness formed on the wafer W. The 6 o'clock direction indicates the orientation of the gas nozzle 34, and the 12 o'clock direction indicates the orientation of the exhaust slit 15.

[0063] like Figure 4As shown in the upper layer, when Si2H6 is supplied from three gas nozzles 31, 34, and 37, and the wafer W is not rotating, the silicon film thickness is relatively thin in the range from the 4 o'clock direction to the 8 o'clock direction. Thus, in Figure 4 In the example shown above, compared to Figure 3 In the example shown above, the thinner film area expands at the ends of the wafer. As a result, as... Figure 4 As shown in the lower layer, when the wafer W is rotated, the film thickness distribution at the ends of the wafer is thinner than that at the center of the wafer.

[0064] (Example 2)

[0065] In Example 2, using Figure 1 and Figure 2 The processing apparatus 1 shown is used to form a silicon film on wafer W using CVD. In Example 2, with the total flow rate of Si2H6 supplied from the three gas nozzles 31, 34, and 37 fixed at 600 sccm, the flow rate distribution of Si2H6 supplied from each gas nozzle 31, 34, and 37 is varied. The Si2H6 flow rate distribution is as follows: gas nozzle 31 / gas nozzle 34 / gas nozzle 37 = 200 / 200 / 200 sccm, 150 / 300 / 150 sccm, 100 / 400 / 100 sccm, and 0 / 600 / 0 sccm.

[0066] Figure 5 This is a graph showing the experimental results of adjusting the film thickness distribution by changing the flow rate allocation. Figure 5 (a)~ Figure 5 In (d), the horizontal axis represents the wafer position [mm], and the vertical axis represents the silicon film thickness. For wafer position, 0mm is the center of wafer W, and ±150mm is the outer edge of wafer W. Figure 5 (a) represents the result for the case where gas nozzle 31 / gas nozzle 34 / gas nozzle 37 = 200 / 200 / 200 sccm. Figure 5 (b) represents the result for the case where gas nozzle 31 / gas nozzle 34 / gas nozzle 37 = 150 / 300 / 150 sccm. Figure 5 (c) represents the result for the case where gas nozzle 31 / gas nozzle 34 / gas nozzle 37 = 100 / 400 / 100 sccm. Figure 5 (d) represents the result for the case where gas nozzle 31 / gas nozzle 34 / gas nozzle 37 = 0 / 600 / 0 sccm.

[0067] like Figure 5 (a)~ Figure 5As shown in (d), a tendency was observed that as the flow rate of Si2H6 supplied from gas nozzle 34 increased and the flow rate of Si2H6 supplied from gas nozzles 31 and 37 decreased, the film thickness distribution gradually changed from a convex distribution to a concave distribution. Based on this result, it was shown that a desired film thickness distribution can be obtained by changing the flow rate distribution of Si2H6 supplied from gas nozzles 31, 34, and 37.

[0068] In addition, such as Figure 5 (a)~ Figure 5 As shown in (d), a tendency was observed that when Si₂H₆ is ejected from three gas nozzles 31, 34, and 37, higher in-plane uniformity can be obtained compared to when Si₂H₆ is ejected from a single gas nozzle 34. More specifically, as Figure 5 As shown in (a), the in-plane uniformity (Win Unif) of the film thickness is ±2.1% when gas nozzle 31 / gas nozzle 34 / gas nozzle 37 = 200 / 200 / 200 sccm. Figure 5 As shown in (b), the in-plane uniformity of the film thickness is ±1.3% when gas nozzle 31 / gas nozzle 34 / gas nozzle 37 = 150 / 300 / 150 sccm. Figure 5 As shown in (c), the in-plane uniformity of the film thickness is ±1.1% when gas nozzle 31 / gas nozzle 34 / gas nozzle 37 = 100 / 400 / 100 sccm. Figure 5 As shown in (d), the in-plane uniformity of the film thickness is ±4.6% when gas nozzle 31 / gas nozzle 34 / gas nozzle 37 = 0 / 600 / 0 sccm.

[0069] [Simulation Results]

[0070] First of all, Figure 1 and Figure 2 In the processing apparatus 1 shown, a simulation was performed using thermofluid analysis to analyze the concentration distribution of reactive species within the processing container 10 when the flow rate distribution of the feed gas ejected from gas nozzles 31, 34, and 37 was changed. In this simulation, the flow rates of the feed gas ejected from gas nozzle 31 and gas nozzle 37 were set to be the same at all times. Furthermore, the concentration distribution of reactive species was analyzed considering the concentration of reactive species generated due to the thermal decomposition of the feed gas, which affects the thickness of the predetermined film formed on the wafer W. The conditions in this simulation are as follows.

[0071] <Simulation Conditions>

[0072] Raw material gas: Si2H6

[0073] Flow distribution: Levels X1 to X7

[0074] X1: 0 / 600 / 0sccm

[0075] X2: 50 / 500 / 50sccm

[0076] X3: 100 / 400 / 100sccm

[0077] X4: 150 / 300 / 150sccm

[0078] X5: 200 / 200 / 200sccm

[0079] X6: 250 / 100 / 250sccm

[0080] X7: 300 / 0 / 300sccm

[0081] Figure 6 and Figure 7 This is a graph showing the simulation results of adjusting the film thickness distribution by changing the flow rate allocation. Figure 6 In the middle, the gas concentration at the wafer center [kmol / m 3 [] represents the concentration of reactive species at the center of the wafer, and the average gas concentration at the wafer edge [kmol / m]. 3 [This represents the average concentration of reactive species along a 297mm diameter circle centered on the wafer's center.] Additionally, the average gas concentration at the wafer edge was calculated with the wafer center gas concentration set to 1. Figure 7 In the diagram, the horizontal axis represents the flow distribution levels X1 to X7, and the vertical axis represents the average gas concentration at the wafer edge when the gas concentration at the wafer center is set to 1.

[0082] according to Figure 6 and Figure 7 The simulation results show the following: The average concentration of reactive species at the wafer's edge relative to the center is highest when the feed gas is ejected from a single gas nozzle 34 (level X1). With a fixed total flow rate of feed gas ejected from gas nozzles 31, 34, and 37, increasing the flow rate from nozzles 31 and 37 decreases the average concentration of reactive species at the wafer's edge relative to the center (levels X1 to X5). When the flow rate distribution from all three gas nozzles 31, 34, and 37 is equal, the average concentration of reactive species at the wafer's edge relative to the center is lowest (level X5). Furthermore, Figure 6 and Figure 7 The simulation results shown are largely consistent with the film thickness distribution results obtained from Example 2 above.

[0083] Next, in Figure 1 and Figure 2In the processing apparatus 1 shown, a simulation was performed using thermofluid analysis to analyze the concentration distribution of reactive species within the processing container 10 when the flow rate distribution of the feed gas ejected from gas nozzles 31, 34, and 37 was changed. In this simulation, the flow rate of the feed gas ejected from gas nozzle 34 was fixed at 200 sccm, and the flow rate distribution of the feed gas ejected from gas nozzles 31 and 37 was varied. Furthermore, the concentration distribution of reactive species was considered as the object of analysis because the concentration of reactive species generated due to the thermal decomposition of the feed gas was taken into account for the film thickness of the predetermined film formed on the wafer W. The conditions for this simulation are as follows.

[0084] <Simulation Conditions>

[0085] Raw material gas: Si2H6

[0086] Flow distribution: Levels Y1 to Y5

[0087] Y1: 200 / 200 / 200sccm

[0088] Y2: 250 / 200 / 150sccm

[0089] Y3: 300 / 200 / 100sccm

[0090] Y4: 350 / 200 / 50sccm

[0091] Y5: 400 / 200 / 0sccm

[0092] Level Y1 represents a symmetrical gas flow pattern where the flow rates of the raw material gas ejected from the two gas nozzles 31 and 37 are equal. Level Y5 represents the case where no raw material gas is ejected from gas nozzle 37, and is the condition with the largest deviation in gas flow rate within the processing container 10.

[0093] Figure 8 and Figure 9 This is a graph showing the simulation results of adjusting the film thickness distribution by changing the flow rate allocation. Figure 8 In the middle, the gas concentration at the wafer center [kmol / m 3 [] represents the concentration of reactive species at the center of the wafer, and the average gas concentration at the wafer edge [kmol / m]. 3 [This represents the average concentration of reactive species along a 297mm diameter circle centered on the wafer's center.] Additionally, the average gas concentration at the wafer edge was calculated with the wafer center gas concentration set to 1. Figure 9 In the diagram, the horizontal axis represents the flow distribution levels Y1 to Y5, and the vertical axis represents the average gas concentration at the wafer edge when the gas concentration at the wafer center is set to 1.

[0094] according to Figure 8 and Figure 9 The simulation results show the following: The lowest average concentration of reactive species at the wafer edge relative to the center occurs when gas nozzles 31 and 37 emit the same flow rate, i.e., when the gas flow is assumed to be uniform and symmetrical (level Y1). As the flow rate difference between the feed gas emitted from gas nozzle 31 and gas nozzle 37 increases, the average concentration of reactive species at the wafer edge relative to the center increases.

[0095] Based on the above Figures 6-9 The simulation results show that, when the gas flow is set to a uniform, left-right symmetrical pattern, the average concentration of reactive species at the wafer edge relative to the center can be adjusted within the widest range (0.935–0.987). In other words, by ejecting the feed gas from multiple gas nozzles in a manner symmetrical with respect to the straight line L, the adjustment range of the in-plane distribution of the film thickness can be expanded. To achieve this, it is preferable to arrange the multiple gas nozzles symmetrically with respect to the straight line L connecting the center C of the inner tube 11 and the center of the exhaust slit 15.

[0096] Furthermore, in the above embodiments, the raw material gas is an example of a processing gas.

[0097] It should be considered that the embodiments disclosed herein are illustrative in all respects and are not restrictive. The above embodiments may also be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0098] In the above embodiments, the example described uses three gas nozzles supplying the same raw material gas, but this disclosure is not limited to this. For example, there may be four or more gas nozzles supplying the same raw material gas.

[0099] Figure 10 This is a schematic diagram illustrating another example of a gas nozzle configuration. Figure 10 The illustration of gas nozzles other than the one that ejects the raw material gas is omitted. (See diagram for example.) Figure 10As shown, the gas supply unit 130 includes four gas nozzles 131 to 134. Each of the four gas nozzles 131 to 134 injects the same raw material gas into the processing container 10. Each gas nozzle 131 to 134 has a plurality of gas holes 131a to 134a spaced at predetermined intervals along its length. The plurality of gas holes 131a to 134a face, for example, toward the center C side (wafer W side) of the inner tube 11. The four gas nozzles 131 to 134 are symmetrically arranged with respect to the straight line L connecting the center C of the inner tube 11 and the center of the exhaust slit 15. More specifically, gas nozzles 131 and 134 are symmetrically arranged with respect to the straight line L, and gas nozzles 132 and 133 are symmetrically arranged with respect to the straight line L.

[0100] Figure 11 This is a schematic diagram illustrating yet another example of the configuration of a gas nozzle. Figure 11 The illustration of gas nozzles other than the one that ejects the raw material gas is omitted. (See diagram for example.) Figure 11 As shown, the gas supply unit 230 includes four gas nozzles 231 to 234. Each of the four gas nozzles 231 to 234 ejects the same raw material gas into the processing container 10. Each gas nozzle 231 to 234 has a plurality of gas holes 231a to 234a spaced at predetermined intervals along its length. The plurality of gas holes 231a to 234a face, for example, towards the center C side (wafer W side) of the inner tube 11. Three of the four gas nozzles 231 to 233 are symmetrically arranged with respect to the straight line L connecting the center C of the inner tube 11 and the center of the exhaust slit 15. More specifically, gas nozzle 232 is arranged on the straight line L, and gas nozzles 231 and 233 are symmetrically arranged with respect to the straight line L. The remaining gas nozzle 234 is arranged circumferentially adjacent to gas nozzle 233 within the receiving portion 13. Thus, the multiple gas nozzles supplying the same raw material gas may include at least three gas nozzles symmetrically arranged with respect to the straight line L, or may include gas nozzles other than the three symmetrically arranged gas nozzles.

[0101] In the above embodiments, the case where the processing gas is a feed gas has been described, but this disclosure is not limited to this. For example, the processing gas may also be a reactant gas.

[0102] In the above embodiments, the case of an L-shaped gas nozzle has been described as an example, but this disclosure is not limited to this. For example, the gas nozzle may also be a straight pipe that extends along the length of the inner tube on the inner sidewall and is supported by inserting its lower end into a nozzle support (not shown).

[0103] In the above embodiments, the processing apparatus is described as a device that supplies gas from a gas nozzle arranged along the length of the processing container and discharges gas from an exhaust slit arranged opposite to the gas nozzle, but this disclosure is not limited to this. For example, the processing apparatus may also be a device that supplies gas from a gas nozzle arranged along the length of the wafer boat and discharges gas from a gas outlet arranged above or below the wafer boat.

[0104] In the above embodiments, the processing container is described as having a double-tube structure with an inner tube and an outer tube, but this disclosure is not limited to this. For example, the processing container may also be a container with a single-tube structure.

[0105] In the above embodiments, the case where the processing apparatus is a non-plasma apparatus has been described, but this disclosure is not limited thereto. For example, the processing apparatus may also be a plasma apparatus such as a capacitively coupled plasma apparatus or an inductively coupled plasma apparatus.

Claims

1. A processing apparatus, wherein, The processing device includes: The processing container has a generally cylindrical shape and venting slits formed on its side walls; and A plurality of gas nozzles are provided extending vertically along the inner side of the sidewall of the processing container. The plurality of gas nozzles are symmetrically arranged with respect to a straight line extending from the center of the exhaust slit through the center of the processing container to a portion of the sidewall opposite the exhaust slit. The plurality of gas nozzles include a gas nozzle arranged on the straight line when viewed from a horizontal section and at least two other gas nozzles arranged on the same arc extending along the inner circumference of the processing container. The plurality of gas nozzles, including the gas nozzle arranged on the straight line, respectively spray the same processing gas into the processing container.

2. The processing apparatus according to claim 1, wherein, The plurality of gas nozzles spray the processing gas into the same height range within the processing container.

3. The processing apparatus according to claim 1 or 2, wherein, The plurality of gas nozzles each have a plurality of gas holes spaced apart along their length. The plurality of gas holes face the center side of the processing container.

4. The processing apparatus according to claim 1 or 2, wherein, The plurality of gas nozzles have the same inner diameter.

5. The processing apparatus according to claim 1 or 2, wherein, The plurality of gas nozzles includes a pair of gas nozzles arranged symmetrically with respect to the line.

6. The processing apparatus according to claim 5, wherein, The processing apparatus also includes a control unit that controls the flow rate of the processing gas ejected from the plurality of gas nozzles into the processing container. The control unit controls the flow rate of the processing gas ejected from the pair of gas nozzles into the processing container in such a way that the flow rates are the same.

7. The processing apparatus according to claim 1 or 2, wherein, Within the processing container, multiple substrates are arranged approximately horizontally with spacing in the vertical direction.

8. The processing apparatus according to claim 7, wherein, The plurality of substrates are capable of rotating within the processing container about a vertical axis.

9. A processing method, wherein, This processing method has the following steps: A substrate is fed into a processing container having a generally cylindrical shape and venting slits formed on its sidewalls; and A plurality of gas nozzles extending vertically along the inner sidewall of the processing container respectively spray the same processing gas into the processing container. The plurality of gas nozzles are symmetrically arranged with respect to a straight line extending from the center of the exhaust slit through the center of the processing container to the sidewall opposite the exhaust slit. The plurality of gas nozzles includes a gas nozzle arranged on the straight line when viewed from a horizontal section and at least two other gas nozzles arranged on the same arc extending along the inner circumference of the processing container. In this configuration, a pair of gas nozzles, arranged symmetrically with respect to the straight line, supply the same flow rate of processing gas into the processing container.

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