Method for manufacturing support sheet, method for manufacturing semiconductor device, and laminated film for forming support sheet

Abstract

Disclosed is a method for manufacturing a support sheet used in a manufacturing process of a semiconductor device having a dolmen structure, the semiconductor device including a substrate, a first chip disposed on the substrate, a plurality of support sheets disposed on the substrate and around the first chip, and a second chip supported by the plurality of support sheets and disposed so as to cover the first chip, the method for manufacturing the support sheet including: (A) a step of preparing a laminated film having a base material film, a pressure-sensitive adhesive layer, and a support sheet-forming film having a color difference from the base material film and the pressure-sensitive adhesive layer, in this order; (B) a step of singulating the support sheet-forming film to form a plurality of support sheets on a surface of the pressure-sensitive adhesive layer; and (C) a step of picking up the support sheets from the pressure-sensitive adhesive layer.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a support sheet, used in the manufacturing process of a semiconductor device having a dome-shaped structure. The dome-shaped semiconductor device includes: a substrate, a first chip disposed on the substrate, a plurality of support sheets disposed on the substrate and surrounding the first chip, and a second chip supported by the plurality of support sheets and disposed in a manner covering the first chip. Furthermore, this invention relates to a method for manufacturing a semiconductor device having a dome-shaped structure and a laminated film for forming the support sheet. In addition, a dome-shaped tomb is a type of stone tomb, comprising a plurality of pillars and plate-shaped rocks placed thereon. In the semiconductor device having a dome-shaped structure, the support sheets are equivalent to "pillars," and the second chip is equivalent to "plate-shaped rocks." Background Technology

[0002] In recent years, the field of semiconductor devices has demanded high integration, miniaturization, and high speed. As one type of semiconductor device, the structure of stacking semiconductor chips on a controller chip disposed on a substrate has attracted considerable attention. For example, Patent Document 1 discloses a semiconductor die assembly including a controller die and a memory die supported on the controller die by a support member. Patent Document 1... Figure 1 The semiconductor component 100 illustrated in Figure A can have a support structure. That is, the semiconductor component 100 includes a packaging substrate 102, a controller chip 103 disposed on its surface, memory chips 106a and 106b disposed above the controller chip 103, and support members 130a and 130b supporting the memory chip 106a.

[0003] Previous technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Publication No. 2017-515306 Summary of the Invention

[0006] The technical problem to be solved by the invention

[0007] Patent Document 1 discloses that semiconductor materials such as silicon can be used as support components (support sheets), and more specifically, fragments of semiconductor material obtained by dicing semiconductor wafers can be used (see

[0012] ,

[0014] and

[0015] of Patent Document 1). Figure 2 When using semiconductor chips to manufacture support sheets for tomb structures, the process is the same as that of manufacturing conventional semiconductor chips, and for example, the following steps are required.

[0008] (1) Process of attaching back-side polishing tape to semiconductor wafers

[0009] (2) Back-side grinding process of semiconductor wafers

[0010] (3) A process of attaching a film with a pressure-sensitive adhesive layer and an adhesive layer (dicing / die-bonding integrated film) to the dicing ring and the back-side-ground semiconductor wafer disposed in the dicing ring.

[0011] (4) Process of removing the back-side polishing tape from the semiconductor wafer

[0012] (5) The process of monolithizing semiconductor wafers

[0013] (6) The process of picking up the support sheet formed by the laminate of semiconductor chip and adhesive sheet from the pressure-sensitive adhesive layer.

[0014] According to the research of the inventors, it has been found that by using materials other than semiconductor chips (e.g., resin materials), the process of fabricating support sheets in the manufacturing process of semiconductor devices with support structures can be simplified. However, if the support sheet is picked up from the pressure-sensitive adhesive layer using equipment commonly used in the manufacture of semiconductor chips (e.g., die bonders, etc.), it is sometimes impossible to pick up the support sheet as the object of pickup effectively. One reason for this is that the visibility of the camera attached to the die bonder or similar equipment is insufficient before the process of picking up the support sheet from the pressure-sensitive adhesive layer.

[0015] Therefore, the present invention provides a method for manufacturing a support sheet that effectively produces a support sheet with excellent camera visibility. Furthermore, the present invention provides a method for manufacturing a semiconductor device having a support structure, and a laminated film for forming the support sheet.

[0016] means for solving technical problems

[0017] One aspect of the present invention relates to a method for manufacturing a support sheet used in a manufacturing process of a semiconductor device having a support tomb structure. The method for manufacturing the support sheet includes the following steps.

[0018] (A) A process for preparing a laminated film, wherein the laminated film sequentially comprises a substrate film, a pressure-sensitive adhesive layer, and a support sheet having a color difference from the substrate film and the pressure-sensitive adhesive layer for forming a film.

[0019] (B) A process of forming multiple support sheets on the surface of a pressure-sensitive adhesive layer by monolithically forming a support sheet film.

[0020] (C) Process of picking up the support sheet from the pressure-sensitive adhesive layer

[0021] According to one aspect of the method for manufacturing a support sheet, the support sheet can be obtained by monolithically producing a support sheet forming film. Therefore, compared with conventional manufacturing methods that use fragments of semiconductor material obtained by dicing semiconductor wafers as support sheets, the process of manufacturing the support sheet can be simplified. That is, conventionally, the processes (1) to (6) mentioned above are required, but since the support sheet forming film does not contain a semiconductor wafer, the processes (1), (2), and (4) of back-side grinding of the semiconductor wafer can be omitted. Furthermore, since semiconductor wafers, which are more expensive than resin materials, are not used, costs can also be reduced.

[0022] Furthermore, the method for manufacturing a support sheet according to one aspect of the present invention can effectively manufacture a support sheet with excellent camera-based visibility. As a reason for improving camera-based visibility, it is considered that, since there is a color difference between the support sheet forming film, the substrate film, and the pressure-sensitive adhesive layer, when the support sheet forming film is made into a single sheet, the optical contrast between the support sheet forming film, the substrate film, and the pressure-sensitive adhesive layer becomes higher.

[0023] The film for forming the support sheet can be a film formed from a thermosetting resin layer containing colorant, or it can be a multilayer film having a thermosetting resin layer and a resin layer containing colorant. Using these films for forming the support sheet makes it possible to more effectively manufacture support sheets with excellent camera visibility.

[0024] The method for manufacturing the support sheet of the present invention may include a step of identifying the position of the support sheet with a camera between step (B) and step (C).

[0025] The pressure-sensitive adhesive layer of the laminated film prepared in step (A) can be either pressure-sensitive or UV-curable. That is, the pressure-sensitive adhesive layer can be cured by UV irradiation or not; in other words, it can contain a resin with photoreactive carbon-carbon double bonds or not. Furthermore, the pressure-sensitive adhesive layer can contain a resin with photoreactive carbon-carbon double bonds. For example, the adhesive layer can have its adhesiveness reduced by irradiating the designated area with UV light, and for example, a resin with photoreactive carbon-carbon double bonds may remain. When the pressure-sensitive adhesive layer is UV-curable, the adhesiveness of the pressure-sensitive adhesive layer can be reduced by irradiating it with UV light between steps (B) and (C).

[0026] One aspect of the present invention relates to a method for manufacturing a semiconductor device having a support-tomb structure. The semiconductor device with the support-tomb structure includes: a substrate, a first chip disposed on the substrate, a plurality of support sheets disposed on the substrate and surrounding the first chip, and a second chip supported by the plurality of support sheets and disposed in a manner covering the first chip. The method for manufacturing the semiconductor device includes the following steps.

[0027] (D) The process of placing the first chip on the substrate

[0028] (E) The process of placing multiple support sheets obtained by the above manufacturing method on a substrate and around the first chip.

[0029] (F) A process for preparing a chip with an adhesive sheet, the chip having an adhesive sheet comprising a second chip and an adhesive sheet disposed on one side surface of the second chip.

[0030] (G) The process of constructing a pier structure by placing a chip with an adhesive sheet on the surface of multiple support sheets.

[0031] The process of heating the support sheet to cure the thermosetting resin layer or adhesive sheet can be performed at an appropriate time, for example, before process (G). During the stage where the chip with the adhesive sheet is arranged in contact with the surfaces of multiple support sheets, the thermosetting resin layer has been cured, thus preventing deformation of the support sheet as the chip with the adhesive sheet is arranged. Furthermore, the thermosetting resin layer has adhesive properties to other components (e.g., the substrate), so there is no need to provide an additional adhesive layer on the support sheet.

[0032] One aspect of the present invention relates to a laminated film for forming a support sheet, used in a manufacturing process of a semiconductor device having a support-tomb structure. The semiconductor device with the support-tomb structure includes: a substrate, a first chip disposed on the substrate, a plurality of support sheets disposed on the substrate and surrounding the first chip, and a second chip supported by the plurality of support sheets and disposed in a manner covering the first chip. The laminated film for forming the support sheet sequentially comprises a substrate film, a pressure-sensitive adhesive layer, and a support sheet forming film having a color difference from the substrate film and the pressure-sensitive adhesive layer.

[0033] The thickness of the film used to form the support sheet can be, for example, 5–180 μm or 20–120 μm. Since the thickness of the film for forming the support sheet is within this range, it is possible to construct a support structure with an appropriate height for the first chip (e.g., a controller chip).

[0034] The film for forming the support sheet can be a film formed from a thermosetting resin layer containing a colorant, or it can be a multilayer film having a thermosetting resin layer and a resin layer containing a colorant. The film for forming the support sheet may contain a thermosetting resin layer. The thermosetting resin layer preferably contains, for example, an epoxy resin.

[0035] One aspect of the present invention relates to a method for manufacturing a laminated film for forming a support sheet. The method for manufacturing a laminated film for forming a support sheet includes: a step of preparing a pressure-sensitive adhesive film having a substrate film and a pressure-sensitive adhesive layer formed on one side surface thereon; and a step of laminating a support sheet forming film having a color difference from the substrate film and the pressure-sensitive adhesive layer onto the surface of the pressure-sensitive adhesive layer.

[0036] Invention Effects

[0037] According to the present invention, a method for manufacturing a support sheet that effectively produces a support sheet with excellent camera visibility can be provided. Furthermore, according to the present invention, a method for manufacturing a semiconductor device having a support structure and a laminated film for forming a support sheet can be provided. Attached Figure Description

[0038] Figure 1 This is a schematic cross-sectional view illustrating a first embodiment of a semiconductor device.

[0039] Figure 2 (a) Figure 2 (b) and Figure 2 (c) A plan view schematically showing the positional relationship between the first chip and multiple support sheets.

[0040] Figure 3 (a) is a plan view schematically showing one embodiment of a laminated film for forming a support sheet. Figure 3 (b) is Figure 3 (a) is a sectional view of the bb line.

[0041] Figure 4 This is a schematic cross-sectional view illustrating the process of bonding a pressure-sensitive adhesive layer to a support sheet to form a film.

[0042] Figure 5 (a) Figure 5 (b) Figure 5 (c) and Figure 5 (d) is a cross-sectional view schematically illustrating one embodiment of a method for manufacturing a support sheet.

[0043] Figure 6 (a) is a plan view schematically showing one embodiment of the membrane for forming a monolithic support sheet. Figure 6 (b) is Figure 6 (a) Enlarged view of part E.

[0044] Figure 7 It is a schematic cross-sectional view showing the state of multiple support sheets arranged on a substrate and around the first chip.

[0045] Figure 8 This is a schematic cross-sectional view illustrating an example of a chip with an adhesive sheet.

[0046] Figure 9 This is a schematic cross-sectional view showing the support tomb structure formed on the substrate.

[0047] Figure 10 This is a cross-sectional view schematically illustrating a second embodiment of a semiconductor device.

[0048] Figure 11 (a) and Figure 11 (b) is a cross-sectional view schematically showing other embodiments of the laminated film for forming the support sheet. Detailed Implementation

[0049] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments. Furthermore, in this specification, "(meth)acrylic acid" refers to acrylic acid or methacrylic acid, and "(meth)acrylate" refers to acrylate or its corresponding methacrylate. "A or B" means that either A or B may be included, or both may be included.

[0050] In this specification, the term "layer" refers to a structure that, when viewed as a plan view, includes not only the shape formed across the entire surface but also a shape formed in a portion of it. Furthermore, the term "process" in this specification does not refer to an independent process; even if it cannot be clearly distinguished from other processes, it is included in this terminology as long as the intended function of the process is achieved. Additionally, the numerical range indicated by "~" represents the range of minimum and maximum values ​​for the values ​​described before and after the "~".

[0051] In this specification, the content of each component in the composition refers to the total amount of the various substances present in the composition when multiple substances equivalent to each component are present in the composition, unless otherwise specified. Furthermore, unless otherwise specified, the illustrated materials may be used alone or in combination of two or more. Also, in the numerical ranges described in stages in this specification, the upper or lower limit of a certain stage's numerical range may be replaced by the upper or lower limit of the numerical range of other stages.

[0052] <First Implementation>

[0053] (Semiconductor devices)

[0054] Figure 1 This is a cross-sectional view schematically illustrating one embodiment of a semiconductor device. Figure 1 The semiconductor device 100 shown includes a substrate 10, a chip T1 (first chip) disposed on the surface of the substrate 10, a plurality of support sheets Dc disposed on the surface of the substrate 10 and around the chip T1, a chip T2 (second chip) disposed above the chip T1, an adhesive sheet Tc held between the chip T2 and the plurality of support sheets Dc, chips T3 and T4 stacked on the chip T2, a plurality of wires w electrically connecting electrodes (not shown) on the surface of the substrate 10 to the chips T1 to T4 respectively, and a sealing material 50 filling the gap between the chip T1 and the chip T2.

[0055] In this embodiment, a support structure is formed on the substrate 10 by multiple support sheets Dc, a chip T2, and an adhesive sheet Tc located between the support sheets Dc and the chip T2. The chip T1 is separated from the adhesive sheet Tc. By appropriately setting the thickness of the support sheets Dc, sufficient space can be ensured for the connection between the upper surface of the chip T1 and the substrate 10.

[0056] The substrate 10 can be an organic substrate or a metal substrate such as a lead frame. From the viewpoint of suppressing warping of the semiconductor device 100, the thickness of the substrate 10 can be, for example, 90 to 300 μm, or 90 to 210 μm.

[0057] Chip T1, for example, is a controller chip, connected to substrate 10 via adhesive sheet Tc and electrically connected to substrate 10 via wire w. In planar view, the shape of chip T1 is, for example, rectangular (square or elongated). The length of one side of chip T1 is, for example, less than 5 mm, but can also be 2–5 mm or 1–5 mm. The thickness of chip T1 is, for example, 10–150 μm, but can also be 20–100 μm.

[0058] Chip T2, for example, is a memory chip, connected to the upper side of the support sheet Dc via an adhesive sheet Tc. In planar view, chip T2 has a larger size than chip T1. In planar view, the shape of chip T2 is, for example, rectangular (square or elongated). The length of one side of chip T2 is, for example, less than 20 mm, but can also be 4–20 mm or 4–12 mm. The thickness of chip T2 is, for example, 10–170 μm, but can also be 20–120 μm. Furthermore, chips T3 and T4, also for example, are memory chips, connected to the upper side of chip T2 via an adhesive sheet Tc. The length of one side of chips T3 and T4 can be the same as that of chip T2, and the thickness of chips T3 and T4 can also be the same as that of chip T2.

[0059] The support sheet Dc functions as a spacer forming a space around the chip T1. The support sheet Dc comprises a cured product (cured product of a thermosetting resin composition) of a support sheet forming film that has a color difference from the substrate film and the pressure-sensitive adhesive layer. Preferably, the support sheet Dc does not contain a metal layer formed of a metallic material (e.g., copper, nickel, titanium, stainless steel, aluminum, etc.). Furthermore, as... Figure 2 As shown in (a), two support plates Dc (rectangular in shape) can be configured at separate positions on both sides of chip T1, as follows: Figure 2 As shown in (b), a support piece Dc (shape: square, a total of 4) can be arranged at each corner corresponding to the chip T1, as shown in the diagram. Figure 2As shown in (c), a support sheet Dc (rectangular shape, a total of 4) can be arranged at positions corresponding to the edges of chip T1. The length of one side of the support sheet Dc in planar view is, for example, less than 20 mm, or 1 to 20 mm or 1 to 12 mm. The thickness (height) of the support sheet Dc is, for example, 10 to 180 μm, or 20 to 120 μm.

[0060] (Manufacturing method of support sheet)

[0061] An example of a method for manufacturing the support sheet will be described. The manufacturing method of this embodiment includes the following steps (A) to (C).

[0062] (A) A process for preparing a laminated film 20 for forming a support sheet (hereinafter referred to as "laminated film 20" as appropriate), wherein the laminated film 20 for forming a support sheet sequentially comprises a substrate film 1, a pressure-sensitive adhesive layer 2, and a support sheet forming film D (referencing) that has a color difference from the substrate film 1 and the pressure-sensitive adhesive layer 2. Figure 3 , Figure 4 )

[0063] (B) The process of forming multiple support sheets Da on the surface of the pressure-sensitive adhesive layer 2 by monolithizing the support sheet forming film D (see reference). Figure 5 (b))

[0064] (C) The process of picking up the support sheet Da from the pressure-sensitive adhesive layer 2 (refer to) Figure 5 (d))

[0065] also, Figure 1 The support sheet Dc shown is the support sheet after its contained adhesive sheet (thermosetting resin composition) has cured. On the other hand, the support sheet Da is the support sheet in its state before its contained adhesive sheet (thermosetting resin composition) has fully cured (e.g., see reference). Figure 5 (b)).

[0066] Processes (A) to (C) are the processes for manufacturing multiple support sheets Da. See below for reference. Figures 3-5 The processes (A) to (C) are described.

[0067] [(A) Process]

[0068] (A) is the process of preparing the laminated film 20. The laminated film 20 includes a substrate film 1, a pressure-sensitive adhesive layer 2, and a support sheet film D that has a color difference from the substrate film 1 and the pressure-sensitive adhesive layer 2. The substrate film 1 is, for example, a polyethylene terephthalate film (PET film). The pressure-sensitive adhesive layer 2 is formed into a circular shape by punching or the like (see reference). Figure 3

[0069] (a) The pressure-sensitive adhesive layer 2 can be formed from a pressure-sensitive adhesive or a UV-curable pressure-sensitive adhesive. When the pressure-sensitive adhesive layer 2 is formed from a UV-curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer 2 has the property of decreasing adhesiveness due to UV irradiation. The support sheet forming film D is formed into a circle by punching or the like, and has a smaller diameter than the pressure-sensitive adhesive layer 2 (see reference). Figure 3 (a)). The film D for forming the support sheet can be formed from a thermosetting resin composition.

[0070] The thermosetting resin composition constituting film D for forming the support sheet is in a semi-cured state (stage B) and can become a fully cured state (stage C) through a subsequent curing process. From the viewpoint of easily adjusting the shear viscosity to a specified range and exhibiting color difference with the substrate film and pressure-sensitive adhesive layer, the thermosetting resin composition includes epoxy resin, curing agent, elastomer (e.g., acrylic resin), and colorant, and may also include inorganic fillers and curing accelerators as needed. The details of the thermosetting resin composition constituting film D for forming the support sheet will be described later.

[0071] The thickness of the film D used for forming the support sheet can be, for example, 5–180 μm or 20–120 μm. The thickness of the film for forming the support sheet is within this range, thus enabling the construction of a support structure with an appropriate height for the first chip (e.g., a controller chip).

[0072] The laminated film 20 can be manufactured, for example, by laminating a first laminated film having a substrate film 1 and a pressure-sensitive adhesive layer 2 on its surface with a second laminated film having a cover film 3 and a support sheet on its surface (see reference). Figure 4 The first laminated film can be obtained by a process of coating a pressure-sensitive adhesive layer onto the surface of a substrate film 1 and processing the pressure-sensitive adhesive layer into a predetermined shape (e.g., circular) through punching or the like. The second laminated film can be obtained by a process of coating a support sheet forming film onto the surface of a cover film 3 (e.g., PET film or polyethylene film) and processing the support sheet forming film into a predetermined shape (e.g., circular) through punching or the like. When using the laminated film 20, the cover film 3 is peeled off at an appropriate time.

[0073] [(B) Process]

[0074] (B) is a process in which multiple support sheets Da are formed on the surface of the pressure-sensitive adhesive layer 2 by monolithizing the support sheet forming film D. For example... Figure 5 As shown in (a), a cutting ring DR is attached to the laminated film 20. That is, the cutting ring DR is attached to the pressure-sensitive adhesive layer 2 of the laminated film 20, forming a state in which a support sheet forming film D is disposed inside the cutting ring DR. The support sheet forming film D is monolithically formed by cutting (see reference). Figure 5(b)). Therefore, multiple support sheets Da can be obtained from the support sheet forming film D.

[0075] [(C) Process]

[0076] (C) is the process of picking up the support sheet Da from the pressure-sensitive adhesive layer 2. For example... Figure 5 As shown in (c), the substrate film 1 is expanded to separate the support sheets Da from each other. Then, as... Figure 5 As shown in (d), the support sheet Da is peeled off from the pressure-sensitive adhesive layer 2 by pushing the support sheet Da upward with the push clamp 42, and the support sheet Da is picked up by the suction chuck 44.

[0077] Figure 6 (a) is a plan view schematically showing one embodiment of the membrane for forming a monolithic support sheet. Figure 6 (b) is Figure 6 (a) Enlarged view of part E. In this specification, "camera-based visibility" refers to the ease with which the support sheet Da can be identified relative to the substrate film 1 and the pressure-sensitive adhesive layer 2 when observed with a camera attached to an apparatus (e.g., a die bonding machine) used in the manufacture of conventional semiconductor chips to form a monolithically mounted support sheet. This ease of identification can be improved, for example, by increasing the optical contrast between the substrate film 1 and the pressure-sensitive adhesive layer 2 and the support sheet Da. Typically, the substrate film 1 is white and the pressure-sensitive adhesive layer 2 is transparent; therefore, the color of the support sheet Da is not particularly limited as long as it provides sufficient optical contrast with these components. From the perspective of making the optical contrast clearer, the color of the support sheet Da is preferably black. The color of the support sheet Da can be adjusted to the desired color by adjusting the components (especially colorants) of the thermosetting resin composition described later.

[0078] The method for manufacturing the support sheet in this embodiment may include a step of identifying the position of the support sheet with a camera between step (B) and step (C).

[0079] According to the support sheet manufacturing method of this embodiment, the laminated film 20 includes: a substrate film 1, a pressure-sensitive adhesive layer 2, and a support sheet forming film D that has a color difference from the substrate film 1 and the pressure-sensitive adhesive layer 2. Therefore, the optical contrast is increased due to the color difference between the support sheet forming film and the substrate film and the pressure-sensitive adhesive layer, and the visibility of the camera based on the support sheet Da is improved, thereby enabling more effective pickup of the support sheet Da.

[0080] (Semiconductor device manufacturing method)

[0081] The manufacturing method of the semiconductor device 100 will be described. The manufacturing method of this embodiment includes the following steps (D) to (H).

[0082] (D) The process of placing the first chip T1 on the substrate 10

[0083] (E) The process of disposing of a plurality of support sheets Da obtained by the above manufacturing method on the substrate 10 and around the first chip T1 (see reference) Figure 7 )

[0084] (F) A process for preparing a chip T2a with an adhesive sheet, the chip T2a having a second chip T2 and an adhesive sheet Ta disposed on one side surface of the second chip T2 (see reference). Figure 8 )

[0085] (G) The process of constructing a pier structure by disposing a chip T2a with an adhesive sheet on the surface of multiple support sheets Dc (refer to) Figure 9 )

[0086] (H) The process of sealing the gap between chip T1 and chip T2 with sealing material 50, etc. (refer to) Figure 1 )

[0087] Processes (D) to (H) are processes that use multiple support sheets Da to construct the support tomb structure on the substrate 10. The following refers to... Figures 7-9 The processes (D) to (H) are described.

[0088] [(D) Process]

[0089] (D) is the process of placing the first chip T1 onto the substrate 10. For example, the chip T1 is first placed at a predetermined position on the substrate 10 via an adhesive layer T1c. Then, the chip T1 is electrically connected to the substrate 10 via a wire w.

[0090] [(E) Process]

[0091] (E) is a process in which multiple support sheets Da are arranged on the substrate 10 and around the first chip T1. The chip is manufactured through this process. Figure 7 The structure 30 shown includes a substrate 10, a chip T1 disposed on its surface, and a plurality of support sheets Da. The support sheets Da can be disposed via a pressing process. Preferably, the pressing process is performed, for example, at 80–180°C and 0.01–0.50 MPa for 0.5–3.0 seconds. Furthermore, the support sheet Da may be fully cured to become support sheet Dc at the time of step (E), or it may not be fully cured at the time of said step. Preferably, the support sheet Da is fully cured to become adhesive sheet 5c before the start of step (G).

[0092] [(F) Process]

[0093] (F) Process is preparation Figure 8The process of the chip T2a with adhesive sheet shown is illustrated. The chip T2a with adhesive sheet includes a chip T2 and an adhesive sheet Ta disposed on one surface thereon. The chip T2a with adhesive sheet can be obtained, for example, using a semiconductor wafer and die-glued integral film and through a dicing process and a pick-up process.

[0094] [(G) process]

[0095] (G) is a process in which a chip T2a with an adhesive sheet is disposed on top of a chip T1 in such a manner that the adhesive sheet Ta is attached to the upper surfaces of a plurality of support sheets Dc. Specifically, the chip T2a is pressed against the upper surfaces of the support sheets Dc via the adhesive sheet Ta. Preferably, the pressing process is performed, for example, at 80–180°C and 0.01–0.50 MPa for 0.5–3.0 seconds. Then, the adhesive sheet Ta is cured by heating. Preferably, the curing process is performed, for example, at 60–175°C and 0.01–1.0 MPa for 5 minutes or more. Thus, the adhesive sheet Ta is cured to become the adhesive sheet Tc. After the above process, a support structure is constructed on the substrate 10 (see reference). Figure 9 ).

[0096] After step (G) and before step (H), chip T3 is disposed on chip T2 using an adhesive sheet, and then chip T4 is disposed on chip T3 using an adhesive. The adhesive sheet only needs to be the same thermosetting resin composition as the adhesive sheet Ta described above, and is cured by heat to become adhesive sheet Tc (see reference). Figure 1 On the other hand, chips T2, T3, and T4 are electrically connected to the substrate 10 by lines W, respectively. Furthermore, the number of chips stacked on top of chip T1 can be appropriately set and is not limited to the three in this embodiment.

[0097] [(H) process]

[0098] Process (H) involves sealing the gap between chip T1 and chip T2 with sealing material 50. This process is then completed. Figure 1 The semiconductor device 100 shown.

[0099] (Thermosetting resin composition)

[0100] As described above, the thermosetting resin composition constituting the film D for forming the support sheet includes epoxy resin, curing agent, elastomer and colorant, and may also include inorganic filler and curing accelerator if necessary.

[0101] • Feature 1: When the support sheet Da is hot-pressed to the specified position on the substrate 10, it is not easy to cause positional displacement (the melt viscosity (shear viscosity) of the adhesive sheet 5p at 120°C is, for example, 4300~50000Pa·s or 5000~40000Pa·s).

[0102] Feature 2: The adhesive sheet 5c within the semiconductor device 100 exhibits stress relaxation properties (the thermosetting resin composition contains an elastomer (rubber component)).

[0103] • Feature 3: The bonding strength between the chip with the adhesive sheet and the adhesive sheet Tc is sufficiently high (the grain shear strength (shear strength) of the adhesive sheet 5c (i.e., the cured film formed by the thermosetting resin layer) relative to the adhesive sheet Tc is, for example, 2.0 to 7.0 MPa or 3.0 to 6.0 MPa).

[0104] Characteristic 4: Minimal shrinkage during curing

[0105] Feature 5: Adhesive sheet 5c has sufficient mechanical strength.

[0106] [Epoxy Resin]

[0107] There are no particular limitations on epoxy resins as long as they cure and possess adhesive properties. Bifunctional epoxy resins such as bisphenol A, bisphenol F, and bisphenol S, as well as phenolic varnish epoxy resins such as phenolic resin and cresol varnish epoxy resin, can be used. Furthermore, well-known resins such as polyfunctional epoxy resins, glycidylamine epoxy resins, heterocyclic epoxy resins, and alicyclic epoxy resins are also applicable. These can be used individually or in combination.

[0108] [Curing agent]

[0109] Examples of curing agents include phenolic resins, ester compounds, aromatic amines, aliphatic amines, and acid anhydrides. Among these, phenolic resins are preferred from the viewpoint of achieving high grain shear strength. Commercially available phenolic resins include, for example, LF-4871 (trade name, BPA phenolic varnish type phenolic resin) from DIC CORPORATION, HE-100C-30 (trade name, phenyl aralkyl type phenolic resin) from AIR WATER INC, PHENOLITE KA and TD series from DIC CORPORATION, MIREX XLC- and XL series (e.g., MIREX XLC-LL) from MITSUI CHEMICALS FABRO, INC., HE series (e.g., HE100C-30) from AIR WATER INC, MEHC-7800 series (e.g., MEHC-7800-4S) from MEIWA PLASTIC INDUSTRIES, LTD., JDPP series from JEF CHEMICAL CORPORATION, and PSM series (e.g., PSM-4326) from GUN EICHEMICAL INDUSTRY CO., LTD. These can be used individually or in combination with two or more.

[0110] Regarding the blending ratio of epoxy resin and phenolic resin, from the viewpoint of achieving high grain shear strength, the equivalent ratio of epoxy resin to hydroxyl resin is preferably 0.6 to 1.5, more preferably 0.7 to 1.4, and even more preferably 0.8 to 1.3. When the blending ratio is within the above range, it is easy to achieve both sufficiently high levels of curability and flowability.

[0111] [Elastomer]

[0112] Examples of elastomers include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene, and carboxyl-modified acrylonitrile.

[0113] From the viewpoint of achieving high grain shear strength, acrylic resins are preferred as elastomers, and more preferably acrylic resins such as epoxy-containing (meth)acrylic acid copolymers obtained by polymerizable functional monomers, wherein the functional monomers have epoxy or glycerol groups such as glycidyl acrylate or glycidyl methacrylate as crosslinking functional groups. Epoxy-containing (meth)acrylic acid copolymers and epoxy-containing acrylic rubbers are preferred among acrylic resins, and epoxy-containing acrylic rubbers are more preferred. Epoxy-containing acrylic rubbers are rubbers with acrylate as the main component and epoxy groups mainly formed from copolymers of butyl acrylate and acrylonitrile, copolymers of ethyl acrylate and acrylonitrile, etc. Furthermore, in addition to epoxy groups, acrylic resins may also have crosslinking functional groups such as alcoholic or phenolic hydroxyl groups and carboxyl groups.

[0114] Commercially available acrylic resins include, for example, NAGASE CHEMTEX CORPORATION's solvent-modified products SG-70L, SG-708-6, WS-023EK30, SG-280EK23, and SG-P3 (trade name: acrylic rubber, weight average molecular weight: 800,000, Tg: 12℃, solvent: cyclohexanone).

[0115] From the viewpoint of achieving high grain shear strength, the glass transition temperature (Tg) of the acrylic resin is preferably -50 to 50°C, more preferably -30 to 30°C. From the viewpoint of achieving high grain shear strength, the weight-average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3,000,000, more preferably 500,000 to 2,000,000. Here, Mw refers to a value determined by gel permeation chromatography (GPC) and converted using a calibration curve based on standard polystyrene. Furthermore, there is a trend towards using acrylic resins with narrow molecular weight distributions to form highly elastic adhesive sheets.

[0116] From the viewpoint of achieving high grain shear strength (shear strength), the amount of elastomer contained in the thermosetting resin composition is preferably 10 to 200 parts by weight, more preferably 20 to 100 parts by weight, relative to 100 parts by weight of the total epoxy resin and epoxy resin curing agent.

[0117] There are no particular restrictions on the colorant as long as it can show a color difference with the substrate film and the pressure-sensitive adhesive layer; known pigments, dyes, etc., can be used. Typically, the substrate film is white and the pressure-sensitive adhesive layer is transparent; therefore, there are no particular restrictions on the colorant as long as it can show an optical contrast with these materials. Since the optical contrast becomes more pronounced, black is preferred as the colorant. Examples of black colorants include carbon black.

[0118] From the viewpoint of achieving a higher color difference with the pressure-sensitive adhesive layer, the amount of colorant contained in the thermosetting resin composition is preferably 0.1 to 10 parts by weight, more preferably 0.1 to 5 parts by weight, relative to 100 parts by weight of the resin component of the thermosetting resin composition.

[0119] [Inorganic packing]

[0120] Examples of inorganic fillers include: aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silicon dioxide, and amorphous silicon dioxide. These can be used individually or in combination with two or more.

[0121] From the viewpoint of achieving high grain shear strength, the average particle size of the inorganic filler is preferably 0.005 μm to 1.0 μm, more preferably 0.05 to 0.5 μm. From the viewpoint of achieving high grain shear strength, it is preferable that the surface of the inorganic filler is chemically modified. Examples of materials for chemically modifying the surface include silane coupling agents. Examples of functional groups that can be used in silane coupling agents include vinyl, acryloyl, epoxy, mercapto, amino, diamino, alkoxy, and ethoxy groups.

[0122] From the viewpoint of achieving high grain shear strength (shear strength), the content of inorganic filler is preferably 20 to 200 parts by mass, more preferably 30 to 100 parts by mass, relative to 100 parts by mass of the resin component in the thermosetting resin composition.

[0123] [Curing Accelerator]

[0124] Examples of curing accelerators include imidazoles and their derivatives, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of achieving high grain shear strength, imidazole compounds are preferred. Examples of imidazoles include 2-methylimidazolium, 1-benzyl-2-methylimidazolium, 1-cyanoethyl-2-phenylimidazolium, and 1-cyanoethyl-2-methylimidazolium. These can be used alone or in combination with two or more.

[0125] From the viewpoint of achieving high grain shear strength (shear strength), the content of curing accelerator in the thermosetting resin composition is preferably 0.04 to 3 parts by weight, more preferably 0.04 to 0.2 parts by weight, relative to 100 parts by weight of the total epoxy resin and epoxy resin curing agent.

[0126] <Second Implementation>

[0127] Figure 10This is a schematic cross-sectional view illustrating a second embodiment of the semiconductor device. In the first embodiment, the semiconductor device 100 is arranged such that the chip T1 and the adhesive sheet Tc are separated. In contrast, in this embodiment, the chip T1 and the adhesive sheet Tc are connected in the semiconductor device 200. That is, the adhesive sheet Tc is connected to the upper surface of the chip T1 and the upper surface of the support sheet Dc. For example, by appropriately setting the thickness of the film D used to form the support sheet, the position of the upper surface of the chip T1 can be aligned with the position of the upper surface of the support sheet Dc.

[0128] In the semiconductor device 200, chip T1 is flip-chip connected to substrate 10 instead of wire-connected. Furthermore, if the configuration is such that an adhesive sheet Ta constituting chip T2a with an adhesive sheet is embedded together with chip T2, then even if substrate 10 and chip T1 are wire-connected, chip T1 can be connected to adhesive sheet Tc.

[0129] The embodiments of the present invention have been described in detail above, but the present invention is not limited to the above embodiments. For example, in the above embodiments, such as Figure 3 As shown in (b), a support sheet forming laminate 20 is illustrated, which has a support sheet forming film D formed from a thermosetting resin layer containing a colorant. However, the support sheet forming laminate may also be a multilayer film having a thermosetting resin layer and a resin layer containing a colorant (a resin layer formed from a resin containing a colorant). Figure 11 (a) and Figure 11 (b) is a cross-sectional view schematically showing other embodiments of the laminated film for forming the support sheet. Figure 11(a) The laminated film 20A for forming a support sheet shown comprises two films D2 (support sheet forming film) having a thermosetting resin layer 5 and a resin layer 6 containing a colorant. That is, in the laminated film 20A for forming a support sheet, a thermosetting resin layer 5 is disposed between the pressure-sensitive adhesive layer 2 and the outermost resin layer 6 containing a colorant. Furthermore, the thermosetting resin layer 5 may be formed from the thermosetting resin composition constituting the support sheet forming film D of the first embodiment, but the thermosetting resin composition may not contain a colorant. The thickness of the thermosetting resin layer 5 is the same as the thickness of the support sheet forming film D. The thickness of the resin layer 6 containing the colorant is, for example, 5 to 100 μm, or it may be 10 to 90 μm or 20 to 80 μm. Regarding the colorant, the substrate film is usually white and the pressure-sensitive adhesive layer is transparent, so there is no particular limitation as long as the colorant is a color that can show optical contrast with these, but since the optical contrast becomes more obvious, the colorant is preferably black. Regarding the black colorant, the same black colorant as illustrated above can be exemplified. The resin containing the colorant is formed from a resin containing the colorant, and commercially available resins containing colorants can be used. For example, the resin layer containing the black colorant is formed from a resin containing the black colorant, and commercially available resins containing black colorants can be used. The resin containing the black colorant has sufficient mechanical strength, and therefore can be, for example, black polyimide.

[0130] Figure 11 (b) The laminated film 20B for forming a support sheet shown includes a three-layer film D3 (support sheet forming film), which has a resin layer 6 containing a colorant and two thermosetting resin layers 5 sandwiching the resin layer 6 containing a colorant. In the laminated film 20B for forming a support sheet, the three-layer film D3 is disposed on the surface of the pressure-sensitive adhesive layer 2.

[0131] The laminated film 20A for forming the support sheet has a resin layer 6 containing colorant, and the optical contrast between the support sheet forming film and the pressure-sensitive adhesive layer becomes higher, thus enabling the effective manufacture of a support sheet with better camera visibility.

[0132] The laminated film 20A for forming the support sheet can be manufactured, for example, through the following processes.

[0133] • The process of preparing the laminated film, wherein the laminated film sequentially comprises a substrate film 1, a pressure-sensitive adhesive layer 2, and a thermosetting resin layer 5.

[0134] • The process of laminating a resin layer 6 containing colorant onto the surface of the above-mentioned laminated film

[0135] The support sheet forming laminate 20B can be manufactured, for example, by a step of providing a thermosetting resin layer 5 on a resin layer 6 containing a colorant in the manufacturing method of the support sheet forming laminate 20A.

[0136] Industrial availability

[0137] According to the present invention, a method for manufacturing a support sheet that effectively produces a support sheet with excellent camera visibility can be provided. Furthermore, according to the present invention, a method for manufacturing a semiconductor device having a support structure and a laminated film for forming a support sheet can be provided.

[0138] Symbol Explanation

[0139] 1-Substrate film, 2-Pressure-sensitive adhesive layer, 5-Thermosetting resin layer, 6-Resin layer, 10-Substrate, 20, 20A, 20B-Laminated films for forming support sheets, 50-Sealing material, 100, 200-Semiconductor devices, D-Film for forming support sheets, D2-Two-layer film (film for forming support sheets), Da, Dc-Support sheets, T1-First chip, T2-Second chip, T2a-Chip with adhesive sheet, Ta, Tc-Adhesive sheet.

Claims

1. A method of manufacturing a support sheet used in a manufacturing process of a semiconductor device having a dolmen structure, the semiconductor device having the dolmen structure including: A substrate, a first chip arranged on the substrate, a plurality of support pieces arranged on the substrate and around the first chip, and a second chip supported by the plurality of support pieces and arranged so as to cover the first chip, a manufacturing method of the support pieces including: (A) a step of preparing a laminated film having a base material film, a pressure-sensitive adhesive layer, and a support piece-forming film having a color difference from the base material film and the pressure-sensitive adhesive layer in order; (B) a step of singulating the support piece-forming film to form a plurality of support pieces on a surface of the pressure-sensitive adhesive layer; and (C) a step of picking up the support pieces from the pressure-sensitive adhesive layer, wherein the support piece-forming film is a multilayer film having a thermosetting resin layer and a resin layer having a color difference from the base material film and the pressure-sensitive adhesive layer.

2. The manufacturing method of the support pieces according to claim 1, including a step of recognizing a position of the support pieces with a camera between the step (B) and the step (C).

3. A method for manufacturing a semiconductor device having a dolmen structure, the semiconductor device having the dolmen structure comprising: A substrate, a first chip arranged on the substrate, a plurality of support pieces arranged on the substrate and around the first chip, and a second chip supported by the plurality of support pieces and arranged so as to cover the first chip, a manufacturing method of the semiconductor device including: (D) a step of arranging a first chip on a substrate; (E) a step of arranging a plurality of support pieces obtained by the manufacturing method according to claim 1 or 2 on the substrate and around the first chip; (F) a step of preparing a chip with an adhesive sheet having a second chip and an adhesive sheet provided on one side surface of the second chip; and (G) a step of arranging the chip with the adhesive sheet on surfaces of the plurality of support pieces to construct a megalithic tomb structure.

4. The manufacturing method of the semiconductor device according to claim 3, including a step of heating the support piece-forming film or the support pieces before the step (G).

5. A laminated film for support sheet formation, used in a manufacturing process of a semiconductor device having a dolmen structure, the semiconductor device having the dolmen structure including: A substrate, a first chip arranged on the substrate, a plurality of support pieces arranged on the substrate and around the first chip, and a second chip supported by the plurality of support pieces and arranged so as to cover the first chip, the support piece-forming laminated film having in order: a base material film; a pressure-sensitive adhesive layer; and a support piece-forming film having a color difference from the base material film and the pressure-sensitive adhesive layer, the support piece-forming film being a multilayer film having a thermosetting resin layer and a resin layer having a color difference from the base material film and the pressure-sensitive adhesive layer.

Images