A composite substrate preparation device and a composite substrate preparation method

Abstract

The present invention relates to the technical field of composite substrate preparation, and discloses a composite substrate preparation device and a composite substrate preparation method. The composite substrate preparation device includes: a physical vapor deposition chamber, which is a first vacuum chamber and is provided with a physical vapor deposition component, and the physical vapor deposition component can perform physical vapor deposition on the surface of a substrate body and form a coating; a bonding chamber, which can be connected to or isolated from the physical vapor deposition chamber and is a second vacuum chamber, and a pressurizing component is provided in the bonding chamber; a moving component, which can transfer the substrate body with the coating in the physical vapor deposition chamber to the bonding chamber, and the pressurizing component can bond at least two coated substrate bodies to form a composite substrate. The composite substrate preparation device disclosed in the present invention has the characteristics of good stability, high material utilization and high yield.

Description

Technical Field

[0001] The present invention relates to the technical field of composite substrate preparation, and in particular to a composite substrate preparation device and a composite substrate preparation method. Background Art

[0002] In the semiconductor field, at least two substrates are usually compounded to obtain a composite semiconductor substrate to meet specific application requirements, for example, a high thermal conductivity support substrate and a device functional layer substrate are compounded, or a high-quality semiconductor substrate and a low-quality semiconductor substrate are compounded. Before compounding, each substrate needs to be coated on the surface. Most of the existing technologies use magnetron plasma sputtering for coating. This method has the disadvantages of low utilization rate of metal materials, unstable plasma, possibility of damaging the substrate due to excessive ion bombardment energy, and contamination of the coating due to particles introduced by secondary sputtering, which makes the yield of the composite substrate obtained by compounding low, reducing the production efficiency of the composite substrate. Summary of the invention

[0003] Based on the above, the purpose of the present invention is to provide a composite substrate preparation device and a composite substrate preparation method, which solves the problems existing in the prior art and has the characteristics of high yield and fast production speed.

[0004] To achieve the above object, the present invention adopts the following technical solutions:

[0005] A preparation device for a composite substrate comprises: a physical vapor deposition chamber, which is a first vacuum chamber and is provided with a physical vapor deposition component, wherein the physical vapor deposition component can perform physical vapor deposition on the surface of a substrate body and form a coating; a bonding chamber, which can be connected to or isolated from the physical vapor deposition chamber and is a second vacuum chamber, wherein a pressurizing component is provided in the bonding chamber; and a moving component, wherein the moving component can transfer the substrate body with the coating in the physical vapor deposition chamber to the bonding chamber, wherein the pressurizing component can bond at least two coated substrate bodies to form a composite substrate.

[0006] As a preferred solution for a composite substrate preparation device, the physical vapor deposition component includes: a material container for containing metal materials; an electron gun, which emits an electron beam that can enter the material container, and the electron beam can vaporize the metal material to form the coating on the side of the substrate body facing the material container.

[0007] As a preferred solution of a composite substrate preparation device, the physical vapor deposition component includes a deflection coil, and the magnetic field generated by the deflection coil can change the moving direction of the electron beam so that the electron beam enters the material container.

[0008] As a preferred solution for a composite substrate preparation device, the magnetic field generated by the deflection coil includes a first magnetic field and a second magnetic field, the first magnetic field can deflect the electron beam at a preset angle within a preset plane, and the second magnetic field can move the electron beam in a direction perpendicular to the preset plane.

[0009] As a preferred solution of a composite substrate preparation device, the preset angle is 180° or 270°.

[0010] As a preferred embodiment of a composite substrate preparation device, the physical vapor deposition component also includes a rotating component, which includes a rotating power component and a turntable, wherein the output end of the rotating power component is connected to the center of the turntable, and the turntable is provided with at least two material holding components arranged along the circumferential direction, and the rotating power component can drive the material holding component to rotate through the turntable.

[0011] As a preferred embodiment of a composite substrate preparation device, the composite substrate preparation device also includes a surface treatment chamber located between the physical vapor deposition chamber and the bonding chamber, a first surface treatment component is provided in the surface treatment chamber, the first surface treatment component includes at least one first surface treatment part, the first surface treatment part is a particle source or a light source, each of the first surface treatment parts can perform surface treatment on the coating of at least one substrate body, the surface treatment chamber is a third vacuum chamber, the moving component can transfer the substrate body with the coating in the physical vapor deposition chamber to the surface treatment chamber, and can also transfer the substrate body after surface treatment to the bonding chamber.

[0012] As a preferred solution for a composite substrate preparation device, a second surface treatment component is provided in the bonding chamber, and the second surface treatment component includes at least one second surface treatment part, and the second surface treatment part is a particle source or a light source. Each of the second surface treatment parts can perform surface treatment on the coating of at least one of the substrate bodies.

[0013] A method for preparing a composite substrate, using the composite substrate preparation device described in any of the above schemes, comprising:

[0014] S1, the physical vapor deposition component coats the substrate body in the physical vapor deposition chamber, and at this time, the physical vapor deposition chamber and the bonding chamber are in an isolated state;

[0015] S2, connecting the physical vapor deposition chamber and the bonding chamber, and the moving component transfers the substrate body with the coating to the bonding chamber;

[0016] S3, repeat S1 and S2;

[0017] S4. The pressurizing component bonds the two substrate bodies to form the composite substrate.

[0018] As a preferred solution of a method for preparing a composite substrate, the method for preparing a composite substrate further comprises surface treating the coating of the substrate body after coating in a vacuum environment, and the pressurizing component bonds the two substrate bodies after the surface treatment.

[0019] As a preferred solution of a method for preparing a composite substrate, the coatings of different substrate bodies are formed by physically depositing the same metal material or different metal materials.

[0020] As a preferred solution of a method for preparing a composite substrate, the coating of the substrate body includes a first coating and a second coating, and the first coating and the second coating are made of different metal materials.

[0021] The beneficial effects of the present invention are as follows: the composite substrate preparation device disclosed in the present invention, due to the physical vapor deposition component coating the surface of the substrate body in the first vacuum chamber, forms a coating on the surface of the substrate body, reduces the possibility of damage to the substrate body or contamination of the coating, improves the utilization rate of the material used in the coating, and has better stability compared with the existing sputtering method. At least two substrate bodies are bonded and connected by a pressurizing component, which increases the connection strength between the substrate bodies and improves the yield of the composite substrate.

[0022] The preparation method of the composite substrate disclosed by the invention has the characteristics of good stability, high material utilization rate and high yield rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.

[0024] Figure 1 is a schematic diagram of a composite substrate preparation device provided in a specific embodiment of the present invention;

[0025] Figure 2 It is a schematic diagram of the composite substrate preparation device provided in the first specific embodiment of the present invention coating a substrate body;

[0026] Figure 3It is a schematic diagram of the composite substrate preparation device provided in the specific embodiment 1 of the present invention when two substrate bodies are composited;

[0027] Figure 4 It is a schematic diagram of the composite substrate preparation device provided in the first specific embodiment of the present invention after the two substrate bodies are composited;

[0028] Figure 5 is a schematic diagram of a composite substrate preparation device provided in a second specific embodiment of the present invention;

[0029] Figure 6 It is a schematic diagram of a composite substrate preparation device provided in a third specific embodiment of the present invention.

[0030] In the figure:

[0031] 1. Physical vapor deposition chamber;

[0032] 21. Material container; 22. Electron gun;

[0033] 3. Bonding chamber;

[0034] 4. Pressurizing assembly; 41. Pressurizing member; 42. Base; 43. Upper support; 44. Lower support;

[0035] 5. Surface treatment chamber;

[0036] 6. First surface treatment part;

[0037] 7. Second surface treatment part;

[0038] 81, first connecting valve; 82, second connecting valve; 83, third connecting valve;

[0039] 100. substrate body; 200. metal material; 300. electron beam. DETAILED DESCRIPTION

[0040] In order to make the technical problems solved by the present invention, the technical solutions adopted and the technical effects achieved clearer, the technical solutions of the embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0041] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. Among them, the terms "first position" and "second position" are two different positions.

[0042] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0043] Embodiment 1

[0044] This embodiment provides a composite substrate preparation device, such as Figures 1 to 4 As shown, it includes a physical vapor deposition chamber 1, a bonding chamber 3 and a moving component (not shown in the figure), the physical vapor deposition chamber 1 is a first vacuum chamber and is provided with a physical vapor deposition component therein, the physical vapor deposition component can perform physical vapor deposition on the surface of the substrate body 100 and form a coating, the bonding chamber 3 can be connected to or isolated from the physical vapor deposition chamber 1, and the bonding chamber 3 is a second vacuum chamber, a pressurizing component 4 is provided in the bonding chamber 3, the moving component can transfer the substrate body 100 with the coating in the physical vapor deposition chamber 1 to the bonding chamber 3, and the pressurizing component 4 can bond at least two coated substrate bodies 100 to form a composite substrate. In the process of the pressurizing component 4 applying pressure to the substrate body 100, there is no need to heat the substrate, which reduces the probability that the crystal structure of the coating changes during the heating process and affects the characteristics of the composite substrate, and improves the yield rate of the composite substrate.

[0045] It should be noted that the preparation device of the composite substrate of this embodiment also includes two vacuum suction parts (not shown in the figure) and two vacuum detection parts (not shown in the figure). The two vacuum suction parts are respectively connected to the physical vapor deposition chamber 1 and the bonding chamber 3, and the two vacuum detection parts are respectively used to detect the vacuum degree of the physical vapor deposition chamber 1 and the bonding chamber 3.

[0046] The composite substrate preparation device provided in this embodiment, because the physical vapor deposition component coats the surface of the substrate body 100 in the first vacuum chamber, a coating is formed on the surface of the substrate body 100, which reduces the possibility of damage to the substrate body 100 or contamination of the coating, and improves the utilization rate of the material used in the coating. Compared with the existing sputtering method, the stability is better, and at least two substrate bodies 100 are bonded and connected by the pressurizing component 4, which increases the connection strength between the substrate bodies 100 and improves the yield rate of the composite substrate.

[0047] Specifically, Figures 1 to 4 As shown, the preparation device of the composite substrate of this embodiment further includes a first connecting valve 81, which is configured to be closed when the physical vapor deposition component is coating on the substrate body 100 to isolate the physical vapor deposition chamber 1 and the bonding chamber 3. The first connecting valve 81 is also configured to be opened when the moving component transfers the substrate body 100 with the coating to connect the physical vapor deposition chamber 1 and the bonding chamber 3. That is, when the physical vapor deposition component is coating the substrate body 100, the first connecting valve 81 is in a closed state to prevent the gaseous metal material 200 from entering the bonding chamber 3. When the substrate body 100 needs to be moved from the physical vapor deposition chamber 1 to the bonding chamber 3, the first connecting valve 81 is opened, and the moving component transfers the substrate body 100. At this time, the physical vapor deposition chamber 1 is the first vacuum chamber, and the bonding chamber 3 is the second vacuum chamber, which prevents external air, particles or other gases from entering the physical vapor deposition chamber 1 and the bonding chamber 3, thereby reducing the possibility of changes in the physical or chemical properties of the coating.

[0048] like Figures 1 to 4 As shown, the physical vapor deposition assembly of this embodiment includes a container 21, an electron gun 22 and a deflection coil (not shown in the figure), the container 21 is used to hold the metal material 200, the electron gun 22 can emit an electron beam 300, the magnetic field generated by the deflection coil can change the moving direction of the electron beam 300 so that the electron beam 300 enters the container 21, and the electron beam 300 can vaporize the metal material 200 so that a coating is formed on the side of the substrate body 100 facing the container 21. Specifically, the container 21 of this embodiment is a crucible, and the substrate body 100 is a semiconductor substrate. After entering the crucible, the electron beam 300 can melt the metal material, and the melted metal material forms metal vapor in the first vacuum chamber, and the metal vapor forms a coating on the semiconductor substrate. In other embodiments, the deflection coil may not be provided, and the electron beam 300 generated by the electron gun 22 directly enters the container 21 to melt the metal material 200, which is specifically provided according to actual needs.

[0049] The magnetic field generated by the deflection coil of this embodiment includes a first magnetic field and a second magnetic field. The first magnetic field can deflect the electron beam 300 at a preset angle in a preset plane, and the second magnetic field can move the electron beam 300 in a direction perpendicular to the preset plane. Further, the preset plane of this embodiment is a vertical plane determined by the paper surface, and the second magnetic field can change the electron beam 300 to move in a direction perpendicular to the preset plane, so that the electron beam 300 scans in the container 21, and the scanning frequency of the electron beam 300 in the container 21 is between 5Hz-500Hz, so as to evenly consume the metal material in the container 21, and avoid the phenomenon of digging holes due to excessive local consumption. The preset angle of this embodiment is 270°. In other embodiments, the preset angle can also be 180° or other angles, and the preset plane can also be other planes, which are selected and set according to actual needs.

[0050] The electron gun 22 of this embodiment at least includes a cathode, a bunching electrode and an anode. The cathode and the bunching electrode are connected to a negative potential, and the anode is grounded. The electron beam 300 is accelerated by the electric field between the cathode and the anode, and the voltage of the negative potential is between 1 kV and 100 kV. The cathode can also be connected to a DC power supply. The cathode is heated to a high temperature by an electric current to release the electron beam 300. The current size of the electron beam 300 can be changed by changing the size of the cathode heating current. By changing the voltage of the negative potential electrically connected to the electron gun 22 and the size of the heating current of the DC power supply connected to the cathode, the efficiency of the coating can be changed, and by controlling the duration of the coating, the thickness of the coating can be changed.

[0051] The physical vapor deposition component of this embodiment also includes a rotating component (not shown in the figure), which includes a rotating power component and a turntable. The output end of the rotating power component is connected to the center of the turntable. The turntable is provided with at least two material receiving parts 21 evenly arranged along its circumference, that is, these material receiving parts 21 are evenly spaced and located on the same circle with the center of the turntable as the center. Each material receiving part 21 is filled with different metal materials. The rotating power component can drive the material receiving part 21 to rotate through the turntable, so that the electron beam 300 can enter different material receiving parts 21 and realize the change of metal material during coating.

[0052] like Figures 1 to 4As shown, the pressurizing component 4 of this embodiment includes a pressurizing member 41, a base 42, an upper support 43 and a lower support 44. The output end of the pressurizing member 41 is provided with an upper support 43, and the lower support 44 is arranged on the base 42. The upper support 43 and the lower support 44 are arranged opposite to each other. The upper support 43 can be fixedly connected to a substrate body 100, and the two can be bonded or magnetically connected, etc. The other substrate body 100 can be positioned on the lower support 44, and the two substrate bodies 100 are arranged opposite to each other on the sides with the coating. The pressurizing member 41 drives one substrate body 100 to move toward the direction close to the other substrate body 100 through the upper support 43 and pressurizes it, so that the two substrate bodies 100 are fixedly connected by pressing.

[0053] This embodiment further provides a method for preparing a composite substrate, using the composite substrate preparation device described in the above technical solution, comprising:

[0054] S1, such as Figure 2 As shown, the physical vapor deposition assembly coats the substrate body 100 in the physical vapor deposition chamber 1, and at this time, the physical vapor deposition chamber 1 and the bonding chamber 3 are in an isolated state;

[0055] S2, connecting the physical vapor deposition chamber 1 and the bonding chamber 3, and moving the assembly to transfer the substrate body 100 with the coating to the bonding chamber 3;

[0056] S3, repeat S1 and S2;

[0057] S4, such as Figure 3 As shown, the pressurizing assembly 4 bonds the two substrate bodies 100 to form a composite substrate. Figure 4 shown.

[0058] It should be noted that if three substrate bodies 100 are combined, the following steps are further included after S4:

[0059] S5, the moving component transfers the composite substrate to the physical vapor deposition chamber 1;

[0060] S6, the physical vapor deposition component coats the composite substrate in the physical vapor deposition chamber 1, and at this time, the physical vapor deposition chamber 1 and the bonding chamber 3 are in an isolated state;

[0061] S7, connecting the physical vapor deposition chamber 1 and the bonding chamber 3, and moving the assembly to transfer the composite substrate to the bonding chamber 3;

[0062] S8, the physical vapor deposition assembly coats the third substrate body 100 in the physical vapor deposition chamber 1, and at this time the physical vapor deposition chamber 1 and the bonding chamber 3 are in an isolated state;

[0063] S9, connecting the physical vapor deposition chamber 1 and the bonding chamber 3, and moving the assembly to transfer the substrate body 100 with the coating to the bonding chamber 3;

[0064] S10, the pressurizing component 4 bonds the substrate body 100 with the composite substrate to form a product.

[0065] In other embodiments, when the three substrate bodies 100 are compounded, the two opposite surfaces of the first substrate body 100 may be coated respectively to form a coating, and then one surface of the second substrate body 100 and one surface of the third substrate body 100 may be coated. The pressurizing component 4 first fixes the second substrate body 100 to a surface with a coating on the first substrate body 100, and then connects the third substrate body 100 to another surface with a coating on the first substrate body 100, thereby achieving compounding of the three substrate bodies 100.

[0066] The method for preparing the composite substrate provided in this embodiment has the characteristics of good stability, high material utilization rate and high yield rate.

[0067] Specifically, the coatings of different substrate bodies 100 are formed by physically depositing the same metal material or different metal materials. Further, the coatings of the substrate body 100 include a first coating and a second coating, and the first coating and the second coating are made of different metal materials.

[0068] Embodiment 2

[0069] like Figure 5 As shown, the difference between this embodiment and the first embodiment is that the preparation device of the composite substrate further includes a surface treatment chamber 5 located between the physical vapor deposition chamber 1 and the bonding chamber 3, and a first surface treatment component is arranged in the surface treatment chamber 5, and the first surface treatment component includes at least one first surface treatment part 6, and the first surface treatment part 6 is a particle source or a light source, and each first surface treatment part 6 can perform surface treatment on the coating of at least one substrate body 100 to remove dirt on the surface of the coating and activate the metal material in the coating, and the surface treatment chamber 5 is a third vacuum chamber, and the moving component can transfer the substrate body 100 with the coating in the physical vapor deposition chamber 1 to the surface treatment chamber 5, and can also transfer the substrate body 100 after the surface treatment to the bonding chamber 3. It should be noted that when performing surface treatment on the coating of the substrate body 100, it is necessary to ensure that the coating is always in a vacuum environment.

[0070] like Figure 5As shown, the preparation device of the composite substrate does not include a first connecting valve 81, but includes a second connecting valve 82 and a third connecting valve 83. The second connecting valve 82 is located between the physical vapor deposition chamber 1 and the surface treatment chamber 5 to control the connection between the two. The third connecting valve 83 is located between the surface treatment chamber 5 and the bonding chamber 3 to control the connection between the two.

[0071] The moving assembly of this embodiment can move the substrate body 100 in the physical vapor deposition chamber 1 to the surface treatment chamber 5 for surface treatment, and can also move the surface-treated substrate body 100 to the bonding chamber 3, thereby achieving a fixed connection between the substrate bodies 100.

[0072] The preparation method of the composite substrate of this embodiment is different from that of the first embodiment in that before moving the substrate body 100 to the bonding chamber 3, the substrate body 100 is first moved to the surface treatment chamber 5 so that the first surface treatment part 6 performs surface treatment on the coating, and then the surface-treated substrate body 100 can be moved into the bonding chamber 3 to achieve the composite of at least two substrate bodies 100.

[0073] Embodiment 3

[0074] like Figure 6 As shown, the difference between this embodiment and the first embodiment is that a second surface treatment component is provided in the bonding chamber 3, and the second surface treatment component includes at least one second surface treatment part 7, and the second surface treatment part 7 is a particle source or a light source. Each second surface treatment part 7 can perform surface treatment on the coating of at least one substrate body 100, and the pressurizing component 4 can connect the substrate bodies 100 after the surface treatment so that the substrate bodies 100 can be compounded.

[0075] The preparation method of the composite substrate of this embodiment is different from that of the first embodiment in that when the substrate body 100 is moved to the bonding chamber 3, the second surface treatment component 7 first performs surface treatment on the coating, and then the pressurizing component 4 can apply pressure to the surface-treated substrate body 100 to achieve the composite of at least two substrate bodies 100.

[0076] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A composite substrate preparation device, characterized in that: include: A physical vapor deposition chamber (1) is a first vacuum chamber and is provided with a physical vapor deposition component therein, wherein the physical vapor deposition component is capable of performing physical vapor deposition on the surface of a substrate body (100) and forming a coating; A bonding chamber (3) which can be connected to or isolated from the physical vapor deposition chamber (1) and is a second vacuum chamber, wherein a pressurizing component (4) is provided in the bonding chamber (3); a moving component, wherein the moving component is capable of transferring the substrate body (100) with the coating in the physical vapor deposition chamber (1) to the bonding chamber (3); the pressurizing component 4 is capable of bonding at least two of the coated substrate bodies (100) to form a composite substrate; and during the process of applying pressure to the substrate body (100) by the pressurizing component (4), there is no need to heat the substrate; The physical vapor deposition assembly comprises: A material holding member (21) for holding metal material (200); An electron gun (22), wherein the electron beam (300) emitted by the electron gun can enter the material receiving member (21), and the electron beam (300) can vaporize the metal material (200) so as to form the coating on a side of the substrate body (100) facing the material receiving member (21); The physical vapor deposition component comprises a deflection coil, and the magnetic field generated by the deflection coil can change the moving direction of the electron beam (300) so that the electron beam (300) enters the material container (21); The magnetic field generated by the deflection coil comprises a first magnetic field and a second magnetic field, the first magnetic field being capable of causing the electron beam (300) to deflect at a preset angle within a preset plane, and the second magnetic field being capable of causing the electron beam (300) to move in a direction perpendicular to the preset plane; The physical vapor deposition assembly further comprises a rotating assembly, the rotating assembly comprising a rotating power member and a turntable, the output end of the rotating power member is connected to the center of the turntable, the turntable is provided with at least two material receiving members (21) arranged along the circumferential direction, and the rotating power member can drive the material receiving member (21) to rotate through the turntable; The composite substrate preparation device further comprises a surface treatment chamber (5) located between the physical vapor deposition chamber (1) and the bonding chamber (3); a first surface treatment component is provided in the surface treatment chamber (5); the first surface treatment component comprises at least one first surface treatment part (6); the first surface treatment part (6) is a particle source or a light source; each first surface treatment part (6) is capable of performing surface treatment on the coating of at least one substrate body (100); the surface treatment chamber (5) is a third vacuum chamber; the moving component is capable of transferring the substrate body (100) with the coating in the physical vapor deposition chamber (1) to the surface treatment chamber (5); and is also capable of transferring the substrate body (100) after surface treatment to the bonding chamber (3).

2. The composite substrate preparation device according to claim 1, characterized in that: The preset angle is 180° or 270°.

3. The composite substrate preparation device according to claim 1, characterized in that: A second surface treatment component is provided in the bonding chamber (3), the second surface treatment component comprising at least one second surface treatment piece (7), the second surface treatment piece (7) being a particle source or a light source, and each second surface treatment piece (7) being capable of performing surface treatment on the coating of at least one substrate body (100).

4. A method for preparing a composite substrate, characterized in that: A device for preparing a composite substrate according to any one of claims 1 to 3, comprising: S1, the physical vapor deposition component performs coating on the substrate body (100) in the physical vapor deposition chamber (1), and at this time, the physical vapor deposition chamber (1) and the bonding chamber (3) are in an isolated state; S2, connecting the physical vapor deposition chamber (1) and the bonding chamber (3), and the moving component transfers the substrate body (100) with the coating to the bonding chamber (3); S3, repeat S1 and S2; S4, the pressurizing component (4) bonds the two substrate bodies (100) to form the composite substrate.

5. The method for preparing a composite substrate according to claim 4, characterized in that: The method for preparing the composite substrate further comprises performing surface treatment on the coating layer of the substrate body (100) after coating in a vacuum environment, and the pressurizing component (4) bonds two substrate bodies (100) after the surface treatment.

6. The method for preparing a composite substrate according to claim 4, characterized in that: The coatings of different substrate bodies (100) are formed by physically depositing the same metal material or different metal materials.

7. The method for preparing a composite substrate according to claim 4, characterized in that: The plating layer of the substrate body (100) comprises a first plating layer and a second plating layer, and the first plating layer and the second plating layer are made of different metal materials.

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