Method for manufacturing a power semiconductor module and power semiconductor module

Abstract

A power semiconductor module preparation method includes forming a power semiconductor assembly by plastic packaging a power device, forming a first heat dissipation surface on a surface of the power semiconductor assembly, heating a first material between a first heat sink and the first heat dissipation surface, and cooling the first material of the first heat dissipation surface to connect the power semiconductor assembly and the first heat sink. The power semiconductor module preparation method makes the power semiconductor module by the form of plastic packaging first and then welding, so that the power semiconductor module has better integrity, can make the power semiconductor module have stronger waterproof performance, when the first heat sink of the power semiconductor module takes away heat through liquid cooling, the cooling liquid is not easy to penetrate into the power semiconductor assembly of the power semiconductor module, and the sealing performance detection can be performed in advance, thereby improving the reliability. The application also provides a power semiconductor module.

Description

Technical Field

[0001] This application relates to the field of power semiconductors, and more particularly to a method for fabricating a power semiconductor module and a power semiconductor module. Background Technology

[0002] Currently, power semiconductor modules typically use water cooling to maintain temperature. However, water cooling requires the power semiconductor module to have excellent sealing performance. Some existing power semiconductor modules connect the power device to the heat sink first, and then encapsulate the power device. The sealing performance of this type of power semiconductor module is difficult to guarantee, and it is difficult to ensure the sealing is intact when testing the power device before use. Other power semiconductor modules fill the space between the power device and the heat sink with a heatsink medium, allowing for a detachable connection between the power device and the heat sink. This approach allows for the pre-encapsulation of the power device, but the relative positions between the power device and the heat sink are not fixed. The heatsink medium has low thermal conductivity and is prone to gaps, leading to a significant reduction in heat dissipation efficiency. Summary of the Invention

[0003] This application provides a method for fabricating a power semiconductor module and a power semiconductor module, which facilitates sealing of the power semiconductor module and improves the heat dissipation performance of the power semiconductor module.

[0004] The first aspect of this application provides a method for fabricating a power semiconductor module, including:

[0005] A power device is encapsulated to form a power semiconductor assembly, and a first heat dissipation surface is formed on the surface of the power semiconductor assembly. A first material located between a first heat sink and the first heat dissipation surface is heated. The first material on the first heat dissipation surface is cooled to connect the power semiconductor assembly and the first heat sink.

[0006] This power semiconductor module fabrication method employs a pre-molding and subsequent soldering process, resulting in improved overall integrity. The molding process avoids interference from the first heatsink, enhancing the module's waterproof performance. When the first heatsink of this power semiconductor module dissipates heat via liquid cooling, the coolant is less likely to penetrate the power semiconductor components, protecting them and ensuring stable operation under water-cooled conditions. Furthermore, pre-testing of the sealing performance improves reliability.

[0007] Based on the first aspect, in one possible implementation, the step of forming a power semiconductor assembly using the encapsulated power device includes: bonding a first substrate to one side of the power device using a second material, wherein the side of the first substrate facing away from the power device forms the first heat dissipation surface. The melting point of the second material is equal to or higher than that of the first material.

[0008] In this method for fabricating a power semiconductor module, the relative positions of the components in the power device are fixed by welding a first substrate to one side of the power device. When a high thermal conductivity plate such as DBC is used on the first substrate, the heat dissipation area can be increased, thereby improving the heat dissipation performance of the power device. The melting point of the second material is higher than that of the first material, or the melting point of the second material is the same as that of the first material, which ensures that the second material does not melt when the first heat sink is welded to the power semiconductor assembly.

[0009] Based on the first aspect, in one possible implementation, the step of forming a power semiconductor assembly using a plastic-encapsulated power device further includes: the power device comprising a first piece and a second piece, wherein a conductor strip is welded to the side of the power device facing away from the first substrate using a third material, the conductor strip connecting the first piece and the second piece. The melting point of the third material is equal to or higher than that of the first material.

[0010] In the power semiconductor module fabricated by this method, a first component and a second component are electrically connected by a conductor strip, allowing the first and second components to be powered as a whole. Furthermore, the first and second components can cooperate to achieve some functions. That is, when powering the first component, power can be supplied to the second component via the conductor strip. The third material has a higher melting point than the first material, or the same melting point, ensuring that the third material does not melt when the first heat sink is soldered to the power semiconductor component.

[0011] Based on the first aspect, in one possible implementation, the step of heating the first material located between the first radiator and the first heat dissipation surface includes: heating the first material by ultrasonic brazing.

[0012] This power semiconductor module fabrication method uses ultrasonic brazing to melt the first material, allowing localized heating outside the power semiconductor module to reach the melting point of the first material, while maintaining a relatively low temperature elsewhere in the module. This creates a significant temperature gradient between the power semiconductor and the first material, protecting the internal components. Furthermore, ultrasonic brazing improves the uniformity of the melted first material, reduces small air bubbles, and results in a stronger connection between the welded power semiconductor component and the first heat sink after cooling.

[0013] Based on the first aspect, in one possible implementation, the ultrasonic brazing temperature range is 150-180℃, the first material includes multi-element alloy solder paste, the second material includes sintered silver, and the third material includes SAC305.

[0014] In this method for fabricating a power semiconductor module, the first material used is a multi-element alloy solder paste, which has a lower melting point than SAC305. When this combination is used for ultrasonic brazing to connect the first heat sink and the power semiconductor assembly, the second and third materials are in a solid state, maintaining the connection between the power device and the first substrate, as well as the connection between the power device and the conductor strip.

[0015] Based on the first aspect, in one possible implementation, the ultrasonic brazing temperature range is 210-220℃, the first material includes SnSb5, the second material includes sintered silver, and the third material includes SnSb5.

[0016] In this method for fabricating a power semiconductor module, SnSb5 is used as the first material. SnSb5 has a lower melting point than sintered silver. When this combination is used for ultrasonic brazing to connect the first heat sink and the power semiconductor component, heat is concentrated at the location of the first heat sink and the power semiconductor component. Heating the first material through an ultrasonic brazing process at 210-220°C allows the first material between the first heat sink and the power semiconductor to melt, while maintaining the integrity of the power semiconductor component. This results in a power semiconductor module fabricated using this method exhibiting excellent waterproof performance.

[0017] Based on the first aspect, in one possible implementation, the ultrasonic brazing temperature range is 210-220℃, the first material includes any one of multi-element alloy solder paste and SAC305, the second material includes sintered silver, and the third material includes SnSb5.

[0018] In this method for fabricating a power semiconductor module, the first material uses multi-element alloy solder paste or SAC305, and the third material located away from the first material uses SnSb5. When the first material is heated and melted by an ultrasonic brazing process at 210-220°C, the third material remains in a solid state, thereby maintaining the integrity of the power semiconductor component.

[0019] Based on the first aspect, in one possible implementation, the step of heating the first material located between the first heat sink and the first heat dissipation surface includes: heating the first material by vacuum reflow soldering.

[0020] In this method for fabricating a power semiconductor module, the first material is melted using vacuum reflow soldering. Vacuum reflow soldering concentrates heat in the area containing the first material, creating a temperature gradient between the power semiconductor and the heat sink, thus reducing the internal temperature of the power semiconductor while melting the first material. Vacuum reflow soldering ensures relatively uniform melting of the first material, and the vacuum reduces internal bubbles after melting, resulting in a stronger connection between the welded power semiconductor component and the first heat sink after cooling.

[0021] Based on the first aspect, in one possible implementation, the temperature range of the vacuum reflow soldering is 210-220°C, the first material includes any one of multi-element alloy solder paste and SAC305, the second material includes sintered silver, and the third material includes SnSb5.

[0022] In this method for fabricating a power semiconductor module, the first material uses multi-element alloy solder paste or SAC305, and the third material located away from the first material uses SnSb5. When the first material is heated and melted by an ultrasonic brazing process at 210-220°C, the third material remains in a solid state, thereby maintaining the integrity of the power semiconductor component.

[0023] Based on the first aspect, in one possible implementation, the temperature range of the vacuum reflow soldering is 240-260°C, the first material includes any one of multi-alloy solder paste and SAC305, the second material includes sintered silver, and the third material includes high-lead solder paste.

[0024] In this method for preparing a power semiconductor module, the first material uses multi-element alloy solder paste or SAC305, and the third material uses high-lead tin solder paste with a relatively high melting point. When the first material is heated and melted by an ultrasonic brazing process at 240-260℃, the third material remains in a solid state, thereby maintaining the integrity of the power semiconductor component.

[0025] Based on the first aspect, in one possible implementation, the step of heating the first material located between the first radiator and the first heat dissipation surface includes: heating the first material by sintering.

[0026] In this method for fabricating a power semiconductor module, the first material is melted by sintering. During sintering, the first material experiences relatively little external force and remains in a relatively static state, making it easy to control the diffusion area after the first material melts.

[0027] Based on the first aspect, in one possible implementation, the sintering temperature range is 270-290°C, the first material includes nano-silver, the second material includes sintered silver, and the third material includes high-lead tin solder paste.

[0028] In this method for fabricating a power semiconductor module, nano-silver is used as the first material, and high-lead tin solder paste with a relatively high melting point is used as the third material connecting the power device and the conductor strip. The third material remains in a solid state, thus maintaining the integrity of the power semiconductor component. The second material connecting the first substrate and the power device uses sintered silver with a higher melting point than nano-silver. By controlling the temperature at the melting point of nano-silver, the second material does not reach the melting point of sintered silver, thus keeping the sintered silver in a solid state to maintain the connection between the first substrate and the power device.

[0029] Based on the first aspect, in one possible implementation, the step of forming a power semiconductor assembly using the encapsulated power device further includes: bonding a conductive pad to the side of the power device facing away from the first substrate using a fourth material. The side of the conductive pad facing away from the power device is then bonded to a second substrate using a fifth material, and the side of the second substrate facing away from the power device forms a second heat dissipation surface. The melting point of the fourth material is equal to or higher than that of the first material. The melting point of the fifth material is equal to or higher than that of the first material.

[0030] In this method for fabricating a power semiconductor module, a second substrate is welded using a fifth material, enabling the power semiconductor component to have two heat dissipation surfaces: a first heat dissipation surface and a second heat dissipation surface. Dissipation through these two surfaces improves the heat dissipation efficiency of the power semiconductor. The fourth material has a higher melting point than the first material, or the same melting point, ensuring that the fourth material does not melt during welding of the first heat sink to the power semiconductor component. Similarly, the fifth material has a higher melting point than the first material, or the same melting point, ensuring that the fifth material does not melt during welding of the first heat sink to the power semiconductor component.

[0031] Based on the first aspect, in one possible implementation, the step of heating the first material located between the first radiator and the first heat dissipation surface further includes: heating the first material located between the second radiator and the second heat dissipation surface.

[0032] The step of heating the first material located between the first heat sink and the first heat dissipation surface further includes: cooling the first material on the second heat dissipation surface to connect the power semiconductor component and the second heat sink.

[0033] In this method for manufacturing a power semiconductor module, a first material identical to that used on the first heat dissipation surface is provided on the second heat dissipation surface, which enables the first heat sink and the second heat sink to be simultaneously soldered onto the outside of the power semiconductor component.

[0034] Based on the first aspect, in one possible implementation, the step of heating the first material located between the first radiator and the first heat dissipation surface includes: heating the first material by ultrasonic brazing.

[0035] This power semiconductor module fabrication method uses ultrasonic brazing to melt the first material, allowing localized heating outside the power semiconductor module to reach the melting point of the first material, while the rest of the module remains at a relatively low temperature. A significant temperature gradient is created between the power semiconductor and the first material, thus protecting the internal components. Furthermore, ultrasonic brazing improves the uniformity of the melted first material, reduces small air bubbles within it, and results in a stronger connection between the welded power semiconductor component and the first heat sink after cooling.

[0036] Based on the first aspect, in one possible implementation, the ultrasonic brazing temperature range is 150-180℃, the first material includes either SAC305 or multi-element alloy solder paste, the second material includes SnSb5, the fourth material includes SAC305, and the fifth material includes SAC305.

[0037] In this method for fabricating a power semiconductor module, the first material uses SAC305 or a multi-element alloy solder paste, which has a lower melting point than SnSb5. When the location of the first material is heated using an ultrasonic brazing process at 150-180℃, the second material will not melt due to its higher melting point, and the locations of the fourth and fifth materials will not reach their melting point due to the temperature gradient, thus the fourth and fifth materials also remain in a solid state.

[0038] Based on the first aspect, in one possible implementation, the ultrasonic brazing temperature range is 210-220℃, the first material includes any one of SAC305, multi-element alloy solder paste and SnSb5, the second material includes PbSnAg, the fourth material includes SnSb5, and the fifth material includes SnSb5.

[0039] In this method for fabricating a power semiconductor module, the first material is any one of SAC305, multi-element alloy solder paste, and SnSb5. The second material... When the location of the first material is heated using an ultrasonic brazing process at 210-220℃, the location of the second material will not reach its melting point due to the temperature gradient, while the fourth and fifth materials will not melt because of their higher melting points.

[0040] Based on the first aspect, in one possible implementation, the step of heating the first material located between the first heat sink and the first heat dissipation surface includes: heating the first material by vacuum reflow soldering.

[0041] In this method for fabricating a power semiconductor module, the first material is melted using vacuum reflow soldering. Vacuum reflow soldering concentrates heat in the area containing the first material, creating a temperature gradient between the power semiconductor and the heat sink, thus reducing the internal temperature of the power semiconductor while melting the first material. Vacuum reflow soldering ensures relatively uniform melting of the first material, and the vacuum reduces internal bubbles after melting, resulting in a stronger connection between the welded power semiconductor component and the first heat sink after cooling.

[0042] Based on the first aspect, in one possible implementation, the temperature range of the vacuum reflow soldering is 210-220℃, the first material includes any one of SAC305 and multi-element alloy solder paste, the second material includes PbSnAg, the fourth material includes SnSb5, and the fifth material includes SnSb5.

[0043] In this method for fabricating a power semiconductor module, the first material uses either SAC305 or a multi-element alloy solder paste. SAC305 has a lower melting point than SnSb5. When the first material is heated using a vacuum reflow soldering process at 210-220°C, the second, fourth, and fifth materials do not melt due to their higher melting points. Furthermore, vacuum reflow soldering allows the first material to melt and reduce internal air bubbles, resulting in a higher connection strength between the power semiconductor component and the heat sink.

[0044] Based on the first aspect, in one possible implementation, the temperature range of the vacuum reflow soldering is 240-260°C, the first material includes any one of SAC305, multi-element alloy solder paste and SnSb5, the second material includes PbSnAg, the fourth material includes PbSnAg, and the fifth material includes PbSnAg.

[0045] In this method for fabricating a power semiconductor module, the first material uses any one of SAC305, multi-element alloy solder paste, and SnSb5. When the first material is heated using a vacuum reflow soldering process at 240-260°C, the second, fourth, and fifth materials will not melt due to their higher melting points. Furthermore, vacuum reflow soldering can reduce internal air bubbles after the first material melts, resulting in a higher connection strength between the power semiconductor component and the heat sink.

[0046] Based on the first aspect, in one possible implementation, the step of heating the first material located between the first heat sink and the first heat dissipation surface includes: heating the first material by sintering.

[0047] In this method for fabricating a power semiconductor module, the first material is melted by sintering. During sintering, the first material experiences relatively little external force and remains in a relatively static state, making it easy to control the diffusion area after the first material melts.

[0048] Based on the first aspect, in one possible implementation, the sintering temperature range is 270-290℃, the first material includes nano-silver, the second material includes PbSnAg, the fourth material includes PbSnAg, and the fifth material includes PbSnAg.

[0049] In this method for preparing a power semiconductor module, the first material used is nano-silver. When the first material is heated using a sintering process at 270-290℃, the second, fourth, and fifth materials will not melt because of their higher melting points.

[0050] Based on the first aspect, in one possible implementation, before the step of heating the first material located between the first heat sink and the first heat dissipation surface, the method further includes: depositing a metal coating on the outside of the first heat sink, the metal coating including any one or more of Ag, Ni, Sn and Au.

[0051] In this method for manufacturing a power semiconductor module, the metal plating applied to the outside of the first heat sink improves the heat dissipation effect of the first heat sink and also protects the first heat sink, reducing the probability of the first heat sink being corroded and damaged by the heat dissipation medium.

[0052] Based on the first aspect, in one possible implementation, before the step of heating the first material located between the first heat sink and the first heat dissipation surface, the method further includes: depositing a metal coating on the outside of the second heat sink, the metal coating including any one or more of Ag, Ni, Sn and Au.

[0053] In this method for manufacturing a power semiconductor module, the metal plating applied to the outside of the second heat sink improves the heat dissipation effect of the second heat sink and also protects the second heat sink, reducing the probability of the second heat sink being corroded and damaged by the heat dissipation medium.

[0054] Based on the first aspect, in one possible implementation, before the step of heating the first material located between the first radiator and the first heat dissipation surface, the method further includes: providing a leveling element on the first heat dissipation surface for indicating the amount of the first material used, the leveling element comprising any of the following:

[0055] A metal material is disposed on the first heat dissipation surface, and the metal material protrudes from the first heat dissipation surface to form the elevation component;

[0056] A protrusion is fixedly provided on the first heat dissipation surface, and the protrusion forms the elevation component;

[0057] A groove is provided on the first heat dissipation surface, and the groove forms the elevation component.

[0058] In this method for manufacturing a power semiconductor module, a leveling feature is provided on the first heat dissipation surface to indicate the amount of the first material used. By controlling the amount of the first material, the probability of excessive use leading to material overflow can be reduced, or the size of the power semiconductor component can be reduced to a minimum. Controlling the amount of the first material also reduces the probability of insufficient material usage leading to weak connection strength between the heat sink and the power semiconductor component.

[0059] Based on the first aspect, in one possible implementation, after the step of forming a power semiconductor assembly by the plastic-encapsulated power device, the method further includes: cutting the power semiconductor into strands.

[0060] In this method for preparing a power semiconductor module, after the power device is encapsulated to form a power semiconductor assembly, the connecting ribs of the power semiconductor assembly are cut off. Then, the excess material that overflowed during encapsulation is removed.

[0061] The second aspect of this application provides a power semiconductor module, which is manufactured using the power semiconductor module fabrication method provided in the first aspect.

[0062] Based on the first aspect, in one possible implementation, after the step of welding one side of the power device to the first substrate with the second material, the method further includes: setting a first arc segment on the first substrate, wherein the first arc segment is located in the middle of the first substrate.

[0063] In this method for fabricating a power semiconductor module, when the first substrate and the power device are welded, the first arc segment can reduce the warping caused by welding the first substrate. This results in a relatively flat state after the first substrate and the power device are welded together.

[0064] Based on the first aspect, in one possible implementation, before the step of heating the first material located between the first heat sink and the first heat dissipation surface, the method further includes: providing a second arc segment on the first heat sink, the second arc segment being located on the first heat sink at a position corresponding to the power device.

[0065] In this method for manufacturing a power semiconductor module, the second arc segment can reduce the stress caused by the warping of the first heat sink, so that the first heat sink and the power semiconductor component are fixedly connected to achieve a relatively flat state.

[0066] Based on the first aspect, in one possible implementation, before the step of welding the side of the conductive pad away from the power device to the second substrate with the fifth material, the method further includes: providing a third arc-shaped segment on the second substrate, the third arc-shaped segment being located in the middle of the second substrate.

[0067] In this power semiconductor module fabrication method, when the second substrate and the conductive pad are welded, the third arc-shaped segment can reduce the warping caused by the welding of the second substrate. This results in a relatively flat state after the second substrate and the conductive pad are welded.

[0068] Based on the first aspect, in one possible implementation, a second heat sink is provided at the second heat dissipation surface, and before the step of heating the first material located between the first heat sink and the first heat dissipation surface, the method further includes: providing a fourth arc segment on the second heat sink, the fourth arc segment being located on the second heat sink at a position corresponding to the power device.

[0069] In this method for manufacturing a power semiconductor module, the fourth arc segment can reduce the stress caused by the warping of the second heat sink, so that the second heat sink can achieve a relatively flat state after being fixedly connected to the power semiconductor component.

[0070] The power semiconductor module is manufactured using the preparation method provided in the first aspect, which enables the power semiconductor module to have better integrity and stronger waterproof performance. When the first heat sink of this power semiconductor module removes heat through liquid cooling, the coolant is less likely to penetrate into the power semiconductor components of the power semiconductor module, thus protecting the power semiconductor components and enabling the power semiconductor components to work stably under water cooling conditions. Attached Figure Description

[0071] Figure 1 This is an exploded view of a power semiconductor module provided in an embodiment of this application.

[0072] Figure 2 This is a cross-sectional view of a power semiconductor module provided in an embodiment of this application.

[0073] Figure 3 This is a flowchart of a method for fabricating a power semiconductor module according to an embodiment of this application.

[0074] Figure 4 This is an exploded view of a power semiconductor module provided in another embodiment of this application.

[0075] Figure 5 This is a cross-sectional view of a power semiconductor module provided in another embodiment of this application.

[0076] Figure 6This is a flowchart of a power semiconductor module fabrication method provided in another embodiment of this application.

[0077] Explanation of main component symbols

[0078] Power Device 110

[0079] First item 111

[0080] Second item 113

[0081] Conductive pad 120

[0082] First substrate 130

[0083] Second substrate 140

[0084] Conductor strip 150

[0085] Signal pin 170

[0086] Terminal 190

[0087] First Material 210

[0088] Second material 230

[0089] Third material 250

[0090] Fourth Material 270

[0091] Fifth Material 290

[0092] First Radiator 310

[0093] Second radiator 330

[0094] The following detailed description, in conjunction with the accompanying drawings, will further illustrate this application. Detailed Implementation

[0095] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. Although the description of this application is presented in conjunction with preferred embodiments, this does not mean that the features of this application are limited to this embodiment. On the contrary, the purpose of describing the application in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of this application. To provide a thorough understanding of this application, many specific details will be included in the following description. This application may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of this application, some specific details will be omitted in the description. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0096] In the following description, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more. Directional terms such as "upper," "lower," "left," and "right" are defined relative to the indicated orientation of the components in the accompanying drawings. It should be understood that these directional terms are relative concepts used for relative description and clarification, and they may change accordingly depending on the orientation of the components in the accompanying drawings.

[0097] In this application, unless otherwise expressly specified and limited, the term "connection" shall be interpreted broadly, for example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection through an intermediate medium. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0098] In the following detailed description of the embodiments in conjunction with the schematic diagrams, for ease of explanation, the diagrams showing the partial structure of the device will be enlarged locally without adhering to the usual scale, and the schematic diagrams are merely examples and should not limit the scope of protection of this application.

[0099] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0100] Figure 1 An exploded view of a power semiconductor module provided in one embodiment of this application is shown. Figure 2 A cross-sectional view of a power semiconductor module provided in one embodiment of this application is shown.

[0101] like Figure 1 As shown, this power semiconductor module is a single-sided heat dissipation power semiconductor module that uses a first heat sink 310 for heat dissipation. This power semiconductor module includes a power semiconductor component and a first heat sink 310. The side of the power semiconductor component closest to the first heat sink 310 forms a first heat dissipation surface. The power semiconductor component and the first heat sink 310 are connected by a first material 210. The heat generated by the power semiconductor component is transferred to the first heat sink 310 through the first material 210, and then dissipated by the first heat sink 310.

[0102] like Figure 2As shown, the power semiconductor assembly includes a power device 110 and a first substrate 130. The side of the power device 110 facing the first heat sink 310 is connected to the first substrate 130 via a second material 230. The first substrate 130 fixes the relative positions of the components of the power device 110 and provides a larger heat dissipation area for the power device 110, thereby improving its heat dissipation efficiency. Optionally, the first substrate 130 may use a DBC (Direct Bonding Copper) substrate. DBC has high thermal conductivity and can quickly remove the heat generated by the power device 110.

[0103] The power semiconductor assembly also includes a conductor strip 150. The power device 110 includes a first element 111 and a second element 113, which are connected to the conductor strip 150 via a third material 250. The conductor strip 150 is disposed on the side of the power device 110 facing away from the first substrate 130 to avoid positional interference between the conductor strip 150 and the first substrate 130. The first element 111 and the second element 113 are electrically connected via the conductor strip 150, allowing them to be supplied with a concentrated power supply, and the combination of the first element 111 and the second element 113 can collaboratively achieve some functions. Optionally, the first element 111 can be an IGBT (Insulated Gate Bipolar Transistor), and the second element 113 can be a diode. The diode can protect the IGBT from sudden voltage or current changes in the power device 110.

[0104] The first component 111 is also electrically connected to a signal pin 170, which is used to connect to an external device to enable signal transmission with the power semiconductor component.

[0105] A first terminal 190 and a second terminal 190 are connected to both ends of the power semiconductor component. Specifically, the first terminal 190 is connected to a first component 111, and the second terminal 190 is connected to a second component 113. The first terminal 190 and the second terminal 190 can control the switching of current through the power semiconductor.

[0106] Figure 3 A flowchart of a method for fabricating a power semiconductor module according to an embodiment of this application is shown, which is used to fabricate a single-sided heat dissipation power semiconductor module.

[0107] like Figure 3 As shown, this method for fabricating a power semiconductor module includes:

[0108] S110, the power device 110 is plastic-encapsulated to form a power semiconductor assembly, and a first heat dissipation surface is formed on the surface of the power semiconductor assembly. The plastic-encapsulated power semiconductor assembly enables it to have better waterproof performance, and the heat from the power semiconductor assembly is carried away through the first heat dissipation surface. After plastic-encapsulation, the power semiconductor assembly is trimmed to remove excess material that overflowed during the plastic-encapsulation process.

[0109] S120, a first heat sink 310 is placed at the first heat dissipation surface. The first heat sink 310 is used to receive heat from the first heat dissipation surface and dissipate the heat away from the power semiconductor component.

[0110] S130, a first material 210 is placed between the first heat sink 310 and the first heat dissipation surface. The first material 210 is placed between the first heat sink 310 and the first heat dissipation surface to connect the first heat sink 310 and the power semiconductor component. The first material 210 also serves to transfer heat, improving the heat transfer efficiency between the power semiconductor component and the first heat sink 310. Optionally, the first material 210 placed between the first heat sink 310 and the first heat dissipation surface can be a solder pad or solder paste.

[0111] S160, heat the first material 210. By heating the first material 210, the first material 210 is made into a fluid state or softened to generate greater intermolecular forces, so that the first material 210 can adhere to the power semiconductor component and the first heat sink 310.

[0112] S170, the first material 210 of the first heat dissipation surface is cooled to connect the power semiconductor component and the first heat sink 310. After cooling the first material 210, the first material 210 changes from a fluid state back to a solid state or from a softened state back to a hard state, so that the first material 210 is fixedly connected to the power semiconductor component and the first heat sink 310.

[0113] It is understandable that S120 can be performed first, followed by S130. For example, the first heat sink 310 and the power semiconductor component can be brought close together to create a certain gap between the first heat dissipation surface and the first heat sink 310, and then the gap can be filled with sheet-like first material 210. Alternatively, the order of S120 and S130 can be reversed. The first material 210 can be placed on the first heat dissipation surface or the surface of the first heat sink 310 first, and then the first heat sink 310 can be brought close to the first heat dissipation surface so that the first heat dissipation surface and the first heat sink 310 clamp the first material 210.

[0114] Prior to step S120, the first heat sink 310 and / or the power semiconductor assembly may be plated, including the following steps:

[0115] S210, a coating is applied to the first heat sink 310. By coating the surface of the first heat sink 310 with a corrosion-resistant metal, the corrosion resistance of the first heat sink 310 can be improved, thereby increasing its service life. The coating can completely cover the first heat sink 310, or it can only cover the side of the first heat sink 310 facing the power semiconductor device. Removing the oxide layer after coating can maintain the heat dissipation efficiency of the first heat sink 310.

[0116] S220 involves plating a coating onto the power semiconductor component. By plating a corrosion-resistant metal onto the surface of the power semiconductor component, its corrosion resistance can be improved, thereby extending its service life.

[0117] The metal used for plating the first heat sink 310 and / or the power semiconductor component can be elemental silver, elemental nickel, elemental tin, or elemental gold. It can also be a composite metal composed of the above metals.

[0118] In step S130, it is necessary to ensure that the first material 210 is sufficient. To ensure that the first material 210 is sufficient, a leveling element is provided on the side of the first heat sink 310 close to the power semiconductor component.

[0119] Optionally, when the elevation element is disposed on the first heat dissipation surface, the elevation element includes a metal material disposed on the first heat dissipation surface, the metal material protruding from the first heat dissipation surface. Alternatively, the elevation element includes a protrusion disposed on the first heat dissipation surface. Alternatively, the elevation element includes a groove disposed on the first heat dissipation surface.

[0120] Optionally, when the elevation element is provided on the first heat sink 310, the elevation element includes a metal material disposed on the surface of the first heat sink 310, the metal material protruding from the first heat dissipation surface. Alternatively, the elevation element includes a protrusion disposed on the surface of the first heat sink 310. Alternatively, the elevation element includes a groove disposed on the surface of the first heat sink 310.

[0121] In step S110, the internal components of the power semiconductor component are connected using a power semiconductor component fabrication method, which includes:

[0122] In step S111, one side of the power device 110 is bonded to the first substrate 130 via the second material 230. The side of the first substrate 130 facing away from the power device 110 forms a first heat dissipation surface. The melting point of the second material 230 is equal to or higher than that of the first material 210. When the first material 210 is heated in step S104, the second material 230 remains solid, thereby maintaining the stability of the power semiconductor component.

[0123] In step S112, the power device 110 includes a first component 111 and a second component 113. A conductor strip 150 is welded to the side of the power device 110 facing away from the first substrate 130 using a third material 250. The conductor strip 150 connects the first component 111 and the second component 113. The melting point of the third material 250 is equal to or higher than that of the first material 210. When the first material 210 is heated in step S104, the third material 250 can remain solid, thereby maintaining the stability of the power semiconductor component.

[0124] Before step S110, the method further includes:

[0125] S101, the first substrate 130 is bent to form a first arc segment, the first arc segment being located in the middle of the first substrate 130.

[0126] When the first substrate 130 and the power device 110 are welded, the first arc segment can reduce the warping caused by welding the first substrate 130. This results in the first substrate 130 and the power device 110 achieving a relatively flat state after welding.

[0127] Understandably, the first arc segment can also be formed without bending. For example, the first substrate 130 can be heat-treated during molding to give it the internal stress necessary to form the first arc segment.

[0128] Before step S120, the method further includes:

[0129] S103, a second arc segment is provided in the first heat sink 310, and the second arc segment is located in the first heat sink 310 corresponding to the position of the power device 110.

[0130] When steps S130 and S140 are completed, the second arc segment can reduce the stress of warping of the first heat sink 310, so that the first heat sink 310 can reach a relatively flat state after being fixedly connected to the power semiconductor component.

[0131] When fabricating a single-sided heat dissipation power semiconductor module, a relatively complete method for fabricating a power semiconductor module includes the following steps:

[0132] S101, the first substrate 130 is bent to form a first arc segment, the first arc segment being located in the middle of the first substrate 130.

[0133] S103, a second arc segment is provided in the first heat sink 310, and the second arc segment is located in the first heat sink 310 corresponding to the position of the power device 110.

[0134] S111, one side of the power device 110 is welded to the first substrate 130 through the second material 230, and the side of the first substrate 130 facing away from the power device 110 forms a first heat dissipation surface.

[0135] S112, the power device 110 includes a first piece 111 and a second piece 113. A conductor strip 150 is welded to the side of the power device 110 away from the first substrate 130 by a third material 250. The conductor strip 150 connects the first piece 111 and the second piece 113.

[0136] S110, the power device 110 is molded to form a power semiconductor assembly, and a first heat dissipation surface is formed on the surface of the power semiconductor assembly. After molding to form the power semiconductor assembly, the power semiconductor assembly is trimmed to remove excess material that overflowed during molding.

[0137] S210, the first heat sink 310 is plated.

[0138] S220 is used to plate power semiconductor components.

[0139] S120, a first heat sink 310 is placed on the first heat dissipation surface.

[0140] S130, the first material 210 is placed between the first heat sink 310 and the first heat dissipation surface.

[0141] S160, heating the first material 210.

[0142] S170, a first material 210 for cooling the first heat dissipation surface, and a connection between the power semiconductor component and the first heat sink 310.

[0143] In the above-described method for preparing a single-sided heat dissipation power semiconductor module, step S160 can employ different processes to heat the first material 210.

[0144] Optionally, in step S160, the first material 210 is heated by ultrasonic brazing. The method of ultrasonic brazing to heat the first material 210 includes:

[0145] S161a, Use an ultrasonic tool head to align with the first material 210.

[0146] S161b emits ultrasonic waves toward the first material 210 via an ultrasonic tool head.

[0147] In step S161a, the ultrasonic tool head can be made of aluminum alloy, titanium alloy, or alloy steel. Aluminum alloy, titanium alloy, and alloy steel can all apply ultrasonic waves with sufficient amplitude to the power semiconductor or the first heat sink 310, so that the welding end face of the first material 210 reaches a temperature of 220°C.

[0148] In step S161a, the ultrasonic tool head can be shaped like a letter head, a two-jaw tool head, or a four-jaw tool head. Depending on different first materials 210 or different IGBT mounting scenarios, multiple tool heads can also be used to simultaneously emit ultrasonic waves onto the power semiconductor or the first heat sink 310.

[0149] In step S161a, the ultrasonic tool head can generate ultrasonic waves on the first heat dissipation surface, the side of the first heat sink 310 facing away from the power semiconductor component, the side of the first heat sink 310 facing the power semiconductor component, or the side of the first heat sink 310. This allows the ultrasonic waves to be kept away from the internal components of the power semiconductor component, resulting in a relatively low internal temperature for the power semiconductor component and thus protecting the power semiconductor.

[0150] When heating the first material 210 using ultrasonic brazing, the step prior to step S130 may further include:

[0151] S130a, the first material 210 is ultrasonically pre-coated onto the first heat dissipation surface.

[0152] S130b, the first material 210 is ultrasonically pre-coated onto the side of the first heat sink 310 facing the power semiconductor component.

[0153] By ultrasonically pre-coating the first material 210 on the first heat dissipation surface and / or the first heat sink 310, the connection strength between the power semiconductor component and the first heat sink 310 can be improved, and the heat transfer efficiency between the power semiconductor component and the first heat sink 310 can also be improved.

[0154] In step S160, when ultrasonic brazing is used to heat the first material 210, a first material combination can be used. In the first material combination, the first material 210 can be a multi-element alloy solder paste, the second material 230 can be sintered silver, and the third material 250 can be SAC305. The SAC305 contains 96.5% tin by weight, 3.0% silver by weight, and 0.5% copper by weight. The multi-element alloy solder paste is a solder paste with added auxiliary metal materials in a Sn-Ag-Cu based solder paste.

[0155] In step S160, when the first material combination is applied and the first material 210 is heated using ultrasonic brazing, the temperature is controlled at 150-180℃. At this time, the ultrasonic brazing concentrates the heat on the first material 210, causing the first material 210, formed by the multi-element alloy tin solder paste, to melt. Meanwhile, the second material 230 formed by sintered silver and the third material 250 formed by SAC305 remain solid, ensuring the stability of the power semiconductor component. Notably, the melting points of sintered silver and SAC305 are higher than those of the multi-element alloy tin solder paste; therefore, when the temperature is controlled at 150-180℃, the sintered silver and SAC305 in the power semiconductor component do not melt.

[0156] In step S160, when ultrasonic brazing is used to heat the first material 210, a second material combination can also be used. In the second material combination, the first material 210 can be SnSb5, the second material 230 can be sintered silver, and the third material 250 can be SnSb5. The weight percentage of tin in SnSb5 is 95%, and the weight percentage of antimony is 5%.

[0157] In step S160, when the second material combination is applied and the first material 210 is heated using ultrasonic brazing, the temperature is controlled at 210-220°C. At this temperature, the ultrasonic brazing concentrates heat on the first material 210, causing the SnSb5-formed first material 210 to melt. Meanwhile, the second material 230 formed by sintered silver and the third material 250 formed by SnSb5 remain solid, ensuring the stability of the power semiconductor component. Since the melting point of sintered silver is higher than that of SnSb5, the sintered silver in the power semiconductor component does not melt when the temperature is controlled at 210-220°C. Because the ultrasonic brazing concentrates heat on the first material 210, the temperature of the second material 230 in the power semiconductor component is lower than that of the first material 210. Therefore, when the temperature of the first material 210 is controlled at 210-220°C, the temperature of the second material 230 connecting the power device 110 and the conductor strip 150 has not yet reached the melting point of SnSb5, and the second material 230 does not melt.

[0158] In step S160, when ultrasonic brazing is used to heat the first material 210, a third material combination can also be used. In the third material combination, the first material 210 can be a multi-element alloy solder paste or SAC305, the second material 230 can be sintered silver, and the third material 250 can be SnSb5.

[0159] In step S160, when the third material combination is applied and the first material 210 is heated using ultrasonic brazing, the temperature is controlled at 210-220°C. At this temperature, the ultrasonic brazing concentrates heat on the first material 210, causing it to melt due to the multi-element alloy solder paste or SAC305. Meanwhile, the second material 230 formed by sintered silver and the third material 250 formed by SnSb5 remain solid, ensuring the stability of the power semiconductor component. Since the melting point of sintered silver is higher than that of SnSb5, the sintered silver in the power semiconductor component does not melt when the temperature is controlled at 210-220°C. Because the ultrasonic brazing concentrates heat on the first material 210, the temperature of the second material 230 in the power semiconductor component is lower than that of the first material 210. Therefore, when the temperature of the first material 210 is controlled at 210-220°C, the temperature of the second material 230 connecting the power device 110 and the conductor strip 150 has not yet reached the melting point of SnSb5, and the second material 230 does not melt.

[0160] Optionally, in step S160, the first material 210 is heated by vacuum reflow soldering. Vacuum reflow soldering can also concentrate heat in the area where the first material 210 is located, creating a temperature gradient between the power semiconductor and the heat sink, and reducing the internal temperature of the power semiconductor when the first material 210 is melted. Moreover, the vacuum can reduce the number of air bubbles inside the first material 210 after it melts, resulting in a stronger connection between the welded power semiconductor assembly and the first heat sink 310 after the first material 210 cools.

[0161] In step S160, when heating the first material 210 using vacuum reflow soldering, a fourth material combination can be used. In the fourth material combination, the first material 210 can be a multi-element alloy solder paste or SAC305, the second material 230 can be sintered silver, and the third material 250 can be SnSb5.

[0162] In step S160, when the fourth material combination is applied and the first material 210 is heated using vacuum reflow soldering, the temperature is controlled at 210-220°C. At this temperature, the vacuum reflow soldering concentrates heat on the first material 210, causing it to melt due to the multi-element alloy solder paste or SAC305. Meanwhile, the second material 230 formed by sintered silver and the third material 250 formed by SnSb5 remain solid, ensuring the stability of the power semiconductor component. Since the melting point of sintered silver is higher than that of SnSb5, the sintered silver in the power semiconductor component does not melt when the temperature is controlled at 210-220°C. Because the temperature at the second material 230 within the power semiconductor component is lower than the temperature at the first material 210, when the temperature at the first material 210 is controlled at 210-220°C, the temperature at the second material 230 connecting the power device 110 and the conductor strip 150 has not yet reached the melting point of SnSb5, and therefore the second material 230 does not melt.

[0163] In step S160, when heating the first material 210 using vacuum reflow soldering, a fifth material combination can be used. In the fifth material combination, the first material 210 can be any one of SnSb5, multi-element alloy solder paste, and SAC305; the second material 230 can be sintered silver; and the third material 250 can be high-lead tin solder paste.

[0164] In step S160, when the fifth material combination is applied and the first material 210 is heated using vacuum reflow soldering, the temperature is controlled at 240-260°C. At this temperature, the vacuum reflow soldering concentrates the heat on the first material 210. Any of SnSb5, multi-element alloy solder paste, and SAC305 can be melted at this temperature. Meanwhile, the second material 230 formed by sintered silver and the third material 250 formed by high-lead tin solder paste remain solid, thus stabilizing the power semiconductor component.

[0165] Optionally, in step S160, the first material 210 is heated by sintering. During sintering, the first material 210 receives less external force and is in a relatively static state, making it easier to control the diffusion area after the first material 210 melts.

[0166] In step S160, when the first material 210 is heated by sintering, a sixth material combination can be used. In the sixth material combination, the first material 210 can be nano-silver, the second material 230 can be sintered silver, and the third material 250 can be high-lead tin solder paste.

[0167] In step S160, the sixth material combination is applied. When the first material 210 is heated by sintering, the temperature is controlled at 270-290°C. At this temperature, the nano-silver can soften to form larger intermolecular forces. Meanwhile, the second material 230 formed by sintered silver and the third material 250 formed by high-lead tin solder paste remain solid, thus stabilizing the power semiconductor component.

[0168] Understandably, when sintering and heating the first material 210, micron-sized silver or copper particles can also be used for the first material 210. When the first material 210 is heated and softened, the second material 230 and the third material 250 remain solid.

[0169] Figure 4 An exploded view of a power semiconductor module provided in another embodiment of this application is shown. Figure 5 A cross-sectional view of a power semiconductor module provided in another embodiment of this application is shown.

[0170] like Figure 5 As shown, this power semiconductor module is a double-sided heat dissipation power semiconductor module using a first heat sink 310 and a second heat sink 330 for heat dissipation. This power semiconductor module includes a power semiconductor component, a first heat sink 310, and a second heat sink 330. The side of the power semiconductor component closest to the first heat sink 310 forms a first heat dissipation surface, which is connected to the first heat sink 310 via a first material 210. The side of the power semiconductor component closest to the second heat sink 330 forms a second heat dissipation surface, which is also connected to the second heat sink 330 via the first material 210. That is, the first and second heat dissipation surfaces use the same material composition, allowing both the first and second heat sinks 310 to be simultaneously connected to the power semiconductor. The heat generated by the power semiconductor component is transferred to the first heat sink 310 through the first material 210 of the first heat dissipation surface, and then dissipated by the first heat sink 310. Simultaneously, the heat generated by the power semiconductor component is also transferred to the second heat sink 330 through the first material 210 of the second heat dissipation surface, and then dissipated by the second heat sink 330.

[0171] like Figure 4 As shown, the power semiconductor assembly includes a power device 110, a first substrate 130, a second substrate 140, and a conductive pad 120. The side of the power device 110 facing the first heat sink 310 is connected to the first substrate 130 via a second material 230. The first substrate 130 fixes the relative positions of the components of the power device 110 and provides a larger heat dissipation area for the power device 110, thereby improving its heat dissipation efficiency. Optionally, the first substrate 130 may use a thermally conductive substrate (DBC), which has high thermal conductivity and can quickly remove heat generated by the power device 110.

[0172] The power device 110 includes a first element 111 and a second element 113, which are connected to a conductive pad 120 via a third material 250. The conductive pad 120 is disposed on the side of the power device 110 facing away from the first substrate 130. The first element 111 and the second element 113 are electrically connected through the conductive pad 120, allowing the first element 111 and the second element 113 to be supplied with concentrated power, and the combination of the first element 111 and the second element 113 can collaboratively achieve some functions. Optionally, the first element 111 can be an IGBT, and the second element 113 can be a diode. The diode can protect the IGBT when there is a sudden change in voltage or current in the power device 110.

[0173] The first component 111 is also electrically connected to a signal pin 170, which is used to connect to an external device to enable signal transmission with the power semiconductor component.

[0174] A second substrate 140 is soldered to the side of the conductive pad 120 facing away from the power device 110 using a fifth material 290. The second substrate 140 can receive heat emitted from the conductive pad 120, giving the power device 110 a larger heat dissipation area and thus improving the heat dissipation efficiency of the power device 110. Optionally, the second substrate 140 may use a thermally conductive substrate (DBC), which has high thermal conductivity and can quickly remove the heat generated by the power device 110 from the power device 110.

[0175] A first terminal 190 and a second terminal 190 are connected to both ends of the power semiconductor component. Specifically, the first terminal 190 is connected to a first component 111, and the second terminal 190 is connected to a second component 113. The first terminal 190 and the second terminal 190 can control the switching of current through the power semiconductor.

[0176] Figure 6 A flowchart of a method for fabricating a power semiconductor module according to an embodiment of this application is shown, which is used to fabricate a double-sided heat dissipation power semiconductor module.

[0177] like Figure 6 As shown, this method for fabricating a power semiconductor module includes:

[0178] S110, the power device 110 is plastic-encapsulated to form a power semiconductor assembly, and a first heat dissipation surface is formed on the surface of the power semiconductor assembly. After plastic encapsulation, the power semiconductor assembly has better waterproof performance, and the heat of the power semiconductor assembly is carried away from the power semiconductor assembly through the first heat dissipation surface. After the power semiconductor assembly is formed by plastic encapsulation, the power semiconductor assembly is trimmed to remove excess material that overflowed during plastic encapsulation.

[0179] S120, a first heat sink 310 is placed at the first heat dissipation surface. The first heat sink 310 is used to receive heat from the first heat dissipation surface and dissipate the heat away from the power semiconductor component.

[0180] S130, a first material 210 is placed between the first heat sink 310 and the first heat dissipation surface. The first material 210 is disposed between the first heat sink 310 and the first heat dissipation surface to connect the first heat sink 310 and the power semiconductor component, and the first material 210 also plays a role in heat transfer, improving the heat transfer efficiency between the power semiconductor component and the first heat sink 310. Optionally, the first material 210 disposed between the first heat sink 310 and the first heat dissipation surface can be a solder pad or solder paste.

[0181] S140, a second heat sink 330 is provided at the second heat dissipation surface. The second heat sink 330 is used to receive heat from the second heat dissipation surface and dissipate the heat away from the power semiconductor component.

[0182] S150, a first material 210 is placed between the second heat sink 330 and the second heat dissipation surface. The first material 210 is disposed between the second heat sink 330 and the second heat dissipation surface to connect the second heat sink 330 and the power semiconductor component. The first material 210 also serves to transfer heat, improving the heat transfer efficiency between the power semiconductor component and the second heat sink 330. Optionally, the first material 210 disposed between the second heat sink 330 and the second heat dissipation surface can be a solder pad or solder paste.

[0183] S160, heat the first material 210. By heating the first material 210, the first material 210 becomes fluid, so that the first material 210 of the first heat dissipation surface fills the gap between the first heat sink 310 and the first heat dissipation surface, and the first material 210 of the second heat dissipation surface fills the gap between the second heat sink 330 and the second heat dissipation surface.

[0184] S170, the first material 210 of the first heat dissipation surface and the second heat dissipation surface is cooled to connect the power semiconductor component, the first heat sink 310 and the second heat sink 330. After cooling the first material 210, the first material 210 of the first heat dissipation surface fixes the power semiconductor component and the first heat sink 310 together, and the first material 210 of the second heat dissipation surface fixes the power semiconductor component and the second heat sink 330 together.

[0185] It is understandable that S120 can be performed first, followed by S130. For example, the first heat sink 310 and the power semiconductor component can be brought close together to create a certain gap between the first heat dissipation surface and the first heat sink 310, and then the gap can be filled with sheet-like first material 210. Alternatively, the order of S120 and S130 can be reversed. The first material 210 can be placed on the first heat dissipation surface or the surface of the first heat sink 310 first, and then the first heat sink 310 can be brought close to the first heat dissipation surface so that the first heat dissipation surface and the first heat sink 310 clamp the first material 210.

[0186] It is understandable that S140 can be performed before S150. For example, the second heat sink 330 and the power semiconductor component can be brought close together to create a gap between the second heat sink surface and the second heat sink 330, and then the gap can be filled with the sheet-like first material 210. Alternatively, the order of S140 and S150 can be reversed. The first material 210 can be placed on the second heat sink surface or the surface of the second heat sink 330 first, and then the second heat sink 330 can be brought close to the second heat sink surface so that the second heat sink surface and the second heat sink 330 clamp the first material 210.

[0187] Prior to step S120, a plating process may be performed on the heat sink and / or power semiconductor assembly, including the following steps:

[0188] In step S210, a plating layer is applied to the first heat sink 310 and the second heat sink 330. By plating a corrosion-resistant metal onto the surfaces of the first heat sink 310 and the second heat sink 330, their corrosion resistance can be improved, thereby extending their service life. The plating layer can completely cover the first heat sink 310 and the second heat sink 330, or it can only cover the side of the first heat sink 310 or the second heat sink 330 facing the power semiconductor component. Removing the oxide layer after plating maintains the heat dissipation efficiency of the first heat sink 310 and the second heat sink 330.

[0189] S220 involves plating a coating onto the power semiconductor component. By plating a corrosion-resistant metal onto the surface of the power semiconductor component, its corrosion resistance can be improved, thereby extending its service life.

[0190] The metal used for plating the first heat sink 310 and / or the power semiconductor component can be elemental silver, elemental nickel, elemental tin, or elemental gold. It can also be a composite metal composed of the above metals.

[0191] Understandably, it is possible to plate only one or both of the first heat sink 310, the second heat sink 330, and the power semiconductor to improve the corrosion resistance of the plated parts.

[0192] In step S130, it is necessary to ensure that the first material 210 is sufficient. To ensure that the first material 210 is sufficient, a leveling element is provided on the side of the first heat sink 310 close to the power semiconductor component.

[0193] Optionally, when the elevation element is disposed on the first heat dissipation surface, the elevation element includes a metal material disposed on the first heat dissipation surface, the metal material protruding from the first heat dissipation surface. Alternatively, the elevation element includes a protrusion disposed on the first heat dissipation surface. Alternatively, the elevation element includes a groove disposed on the first heat dissipation surface.

[0194] Optionally, when the elevation element is provided on the first heat sink 310, the elevation element includes a metal material disposed on the surface of the first heat sink 310, the metal material protruding from the first heat dissipation surface. Alternatively, the elevation element includes a protrusion disposed on the surface of the first heat sink 310. Alternatively, the elevation element includes a groove disposed on the surface of the first heat sink 310.

[0195] In step S150, it is necessary to ensure that the first material 210 is sufficient. To ensure that the first material 210 is sufficient, a leveling element is provided on the side of the second heat sink 330 close to the power semiconductor component.

[0196] Optionally, when the elevation element is disposed on the second heat dissipation surface, the elevation element includes a metal material disposed on the second heat dissipation surface, the metal material protruding from the second heat dissipation surface. Alternatively, the elevation element includes a protrusion disposed on the second heat dissipation surface. Alternatively, the elevation element includes a groove disposed on the second heat dissipation surface.

[0197] Optionally, when the elevation element is provided on the second radiator 330, the elevation element includes a metallic material disposed on the surface of the second radiator 330, the metallic material protruding from the second heat dissipation surface. Alternatively, the elevation element includes protrusions disposed on the surface of the second radiator 330. Alternatively, the elevation element includes grooves disposed on the surface of the second radiator 330.

[0198] In step S110, the internal components of the power semiconductor component are connected using a power semiconductor component fabrication method, which includes:

[0199] In step S111, one side of the power device 110 is bonded to the first substrate 130 via the second material 230. The side of the first substrate 130 facing away from the power device 110 forms a first heat dissipation surface. The melting point of the second material 230 is equal to or higher than that of the first material 210. When the first material 210 is heated in step S104, the second material 230 remains solid, thereby maintaining the stability of the power semiconductor component.

[0200] In step S112, the power device 110 includes a first component 111 and a second component 113. A conductive pad 120 is welded to the side of the power device 110 facing away from the first substrate 130 via a fourth material 270. The conductive pad 120 connects the first component 111 and the second component 113. The melting point of the fourth material 270 is equal to or higher than that of the first material 210. When the first material 210 is heated in step S104, the fourth material 270 remains solid, thereby maintaining the stability of the power semiconductor component.

[0201] In step S113, the side of the conductive pad 120 facing away from the power device 110 is bonded to the second substrate 140 via a fifth material 290. The melting point of the fifth material 290 is equal to or higher than that of the first material 210. When the first material 210 is heated in step S104, the fifth material 290 remains solid, thereby maintaining the stability of the power semiconductor assembly.

[0202] Before step S110, the method further includes:

[0203] S101, the first substrate 130 is bent to form a first arc segment, the first arc segment being located in the middle of the first substrate 130.

[0204] When the first substrate 130 and the power device 110 are welded, the first arc segment can reduce the warping caused by welding the first substrate 130. This results in the first substrate 130 and the power device 110 achieving a relatively flat state after welding.

[0205] S102, the second substrate 140 is bent to form a third arc segment, the third arc segment being located in the middle of the second substrate 140.

[0206] When the second substrate 140 and the conductive pad 120 are welded, the third arc segment can reduce the warping caused by welding the second substrate 140. This results in the second substrate 140 and the conductive pad 120 achieving a relatively flat state after welding.

[0207] Understandably, the first and third arc segments can also be formed without bending. For example, during the molding of the first substrate 130 or the second substrate 140, heat treatment can be used to give the first substrate 130 or the second substrate 140 internal stress for forming the arc segments.

[0208] Before step S120, the method further includes:

[0209] S103, a second arc segment is provided in the first heat sink 310, and the second arc segment is located in the first heat sink 310 corresponding to the position of the power device 110.

[0210] When steps S130 and S140 are completed, the second arc segment can reduce the stress of warping of the first heat sink 310, so that the first heat sink 310 can reach a relatively flat state after being fixedly connected to the power semiconductor component.

[0211] S104, a fourth arc segment is provided in the second heat sink 330, and the fourth arc segment is located in the second heat sink 330 corresponding to the position of the power device 110.

[0212] When steps S130 and S140 are completed, the fourth arc segment can reduce the stress of warping of the second heat sink 330, so that the second heat sink 330 can reach a relatively flat state after being fixedly connected to the power semiconductor component.

[0213] When fabricating a dual-heat dissipation power semiconductor module, a relatively complete method for fabricating a power semiconductor module includes the following steps:

[0214] S101, the first substrate 130 is bent to form a first arc segment, the first arc segment being located in the middle of the first substrate 130.

[0215] S102, the second substrate 140 is bent to form a third arc segment, the third arc segment being located in the middle of the second substrate 140.

[0216] S103, a second arc segment is provided in the first heat sink 310, and the second arc segment is located in the first heat sink 310 corresponding to the position of the power device 110.

[0217] S104, a fourth arc segment is provided in the second heat sink 330, and the fourth arc segment is located in the second heat sink 330 corresponding to the position of the power device 110.

[0218] S111, one side of the power device 110 is welded to the first substrate 130 through the second material 230, and the side of the first substrate 130 facing away from the power device 110 forms a first heat dissipation surface.

[0219] S112, the power device 110 includes a first piece 111 and a second piece 113. A conductive pad 120 is welded to the side of the power device 110 away from the first substrate 130 by a fourth material 270. The conductive pad 120 connects the first piece 111 and the second piece 113.

[0220] S113, the side of the conductive pad 120 facing away from the power device 110 is welded to the second substrate 140 by the fifth material 290.

[0221] S110, the power device 110 is molded to form a power semiconductor assembly, and a first heat dissipation surface is formed on the surface of the power semiconductor assembly. After molding to form the power semiconductor assembly, the power semiconductor assembly is trimmed to remove excess material that overflowed during molding.

[0222] S210, coating is applied to the first radiator 310 and the second radiator 330.

[0223] S220 is used to plate power semiconductor components.

[0224] S120, a first heat sink 310 is placed on the first heat dissipation surface.

[0225] S130, the first material 210 is placed between the first heat sink 310 and the first heat dissipation surface.

[0226] S140, a second heat sink 330 is provided at the second heat dissipation surface.

[0227] S150, the first material 210 is placed between the second heat sink 330 and the second heat dissipation surface.

[0228] S160, heating the first material 210.

[0229] S170, cool the first material 210 of the first heat dissipation surface to connect the power semiconductor component and the first heat sink 310. Cool the first material 210 of the second heat dissipation surface to connect the power semiconductor component and the second heat sink 330.

[0230] In the above-described method for preparing a single-sided heat dissipation power semiconductor module, step S160 can employ different processes to heat the first material 210.

[0231] Optionally, in step S160, the first material 210 is heated by ultrasonic brazing. The method of ultrasonic brazing to heat the first material 210 includes:

[0232] S161a, Use an ultrasonic tool head to align with the first material 210.

[0233] S161b emits ultrasonic waves toward the first material 210 via an ultrasonic tool head.

[0234] In step S161a, the ultrasonic tool head can be made of aluminum alloy, titanium alloy, or alloy steel. Aluminum alloy, titanium alloy, and alloy steel can all apply ultrasonic waves with sufficient amplitude to the power semiconductor or the first heat sink 310, so that the welding end face of the first material 210 reaches a temperature of 220°C.

[0235] In step S161a, the ultrasonic tool head can be shaped like a letter head, a two-jaw tool head, or a four-jaw tool head. Depending on different first materials 210 or different IGBT mounting scenarios, multiple tool heads can also be used to simultaneously emit ultrasonic waves onto the power semiconductor or the first heat sink 310.

[0236] In step S161a, the ultrasonic tool head can generate ultrasonic waves on the first heat dissipation surface, the side of the first heat sink 310 facing away from the power semiconductor component, the side of the first heat sink 310 facing the power semiconductor component, or the side of the first heat sink 310. This allows the ultrasonic waves to be kept away from the internal components of the power semiconductor component, resulting in a relatively low internal temperature for the power semiconductor component and thus protecting the power semiconductor.

[0237] When heating the first material 210 using ultrasonic brazing, the step prior to step S130 may further include:

[0238] S130a, the first material 210 is ultrasonically pre-coated onto the first heat dissipation surface.

[0239] S130b, the first material 210 is ultrasonically pre-coated onto the side of the first heat sink 310 facing the power semiconductor component.

[0240] By ultrasonically pre-coating the first material 210 on the first heat dissipation surface and / or the first heat sink 310, the connection strength between the power semiconductor component and the first heat sink 310 can be improved, and the heat transfer efficiency between the power semiconductor component and the first heat sink 310 can also be improved.

[0241] In step S160, when ultrasonic brazing is used to heat the first material 210, a seventh material combination can be used. In the seventh material combination, the first material 210 can be a multi-element alloy solder paste or SAC305, the second material 230 can be SnSb5, the fourth material 270 can be SAC305, and the fifth material 290 can be SAC305.

[0242] In step S160, when the seventh material combination is applied and ultrasonic brazing is used to heat the seventh material, the temperature is controlled at 150-180℃. At this time, the ultrasonic brazing concentrates the heat on the first material 210, causing the first material 210, formed by the multi-element alloy solder paste or SAC305, to melt. Meanwhile, the second material 230 formed by SnSb5, the fourth material 270 formed by SAC305, and the fifth material 290 remain solid, ensuring the stability of the power semiconductor component. Notably, SnSb5 has a higher melting point than the multi-element alloy solder paste and SAC305; when the temperature is controlled at 150-180℃, the SnSb5 in the power semiconductor component does not melt. Because ultrasonic brazing concentrates heat at the first material 210, the temperatures at the fourth material 270 and the fifth material 290 of the power semiconductor component are lower than the temperature at the first material 210. Therefore, when the temperature at the first material 210 is controlled at 150-180°C, the temperatures at the fourth material 270 connecting the power device 110 and the conductive pad 120, and the fifth material 290 connecting the conductive pad 120 and the second substrate 140 have not yet reached the melting point of SAC305, and the fourth material 270 and the fifth material 290 do not melt.

[0243] In step S160, when ultrasonic brazing is used to heat the first material 210, an eighth material combination can also be used. In the eighth material combination, the first material 210 can be any one of SnSb5, multi-alloy solder paste, and SAC305; the second material 230 can be PbSnAg; the fourth material 270 can be SnSb5; and the fifth material 290 can be SnSb5. In PbSnAg, the weight percentage of lead is 92.5%, the weight percentage of tin is 5.0%, and the weight percentage of silver is 2.5%.

[0244] In step S160, when the eighth material combination is applied and the first material 210 is heated using ultrasonic brazing, the temperature is controlled at 210-220°C. At this temperature, the ultrasonic brazing concentrates heat on the first material 210, causing it to melt when formed by SnSb5, multi-alloy solder paste, or SAC305. Meanwhile, the second material 230 formed by PbSnAg, the fourth material 270 formed by SnSb5, and the fifth material 290 remain solid, ensuring the stability of the power semiconductor component. Note that PbSnAg has a higher melting point than any of SnSb5, multi-alloy solder paste, or SAC305; therefore, when the temperature is controlled at 210-220°C, the PbSnAg in the power semiconductor component does not melt. Because ultrasonic brazing concentrates heat at the first material 210, the temperatures at the fourth material 270 and the fifth material 290 of the power semiconductor component are lower than the temperature at the first material 210. Therefore, when the temperature at the first material 210 is controlled at 210-220°C, the temperatures at the fourth material 270 connecting the power device 110 and the conductive pad 120, and the fifth material 290 connecting the conductive pad 120 and the second substrate 140 have not yet reached the melting point of SnSb5, and the fourth material 270 and the fifth material 290 do not melt.

[0245] Optionally, in step S160, the first material 210 is heated by vacuum reflow soldering. Vacuum reflow soldering can also concentrate heat in the area where the first material 210 is located, creating a temperature gradient between the power semiconductor and the heat sink, and reducing the internal temperature of the power semiconductor when the first material 210 is melted. Moreover, the vacuum can reduce the number of air bubbles inside the first material 210 after it melts, resulting in a stronger connection between the welded power semiconductor assembly and the first heat sink 310 after the first material 210 cools.

[0246] In step S160, when heating the first material 210 using vacuum reflow soldering, a ninth material combination can be used. In the ninth material combination, the first material 210 can be a multi-element alloy solder paste or SAC305, the second material 230 can be PbSnAg, the fourth material 270 can be SnSb5, and the fifth material 290 can be SnSb5.

[0247] In step S160, when the ninth material combination is applied and the first material 210 is heated using vacuum reflow soldering, the temperature is controlled at 210-220°C. At this temperature, the vacuum reflow soldering concentrates heat on the first material 210, causing it to melt due to the heating of the multi-element alloy solder paste or SAC305. Meanwhile, the second material 230 formed by PbSnAg, the fourth material 270 formed by SnSb5, and the fifth material 290 remain solid, ensuring the stability of the power semiconductor component. Notably, PbSnAg has a higher melting point than the multi-element alloy solder paste and SAC305; therefore, when the temperature is controlled at 210-220°C, the PbSnAg in the power semiconductor component does not melt. Because vacuum reflow soldering concentrates heat at the first material 210, the temperatures at the fourth material 270 and the fifth material 290 of the power semiconductor component are lower than the temperature at the first material 210. Therefore, when the temperature at the first material 210 is controlled at 210-220°C, the temperatures at the fourth material 270 connecting the power device 110 and the conductive pad 120, and the fifth material 290 connecting the conductive pad 120 and the second substrate 140 have not yet reached the melting point of SnSb5, and the fourth material 270 and the fifth material 290 do not melt.

[0248] In step S160, when heating the first material 210 using vacuum reflow soldering, a tenth material combination can be used. In the tenth material combination, the first material 210 can be any one of SnSb5, multi-element alloy solder paste, and SAC305; the second material 230 can be PbSnAg; the fourth material 270 can be PbSnAg; and the fifth material 290 can be PbSnAg.

[0249] In step S160, when the tenth material combination is applied and the first material 210 is heated using vacuum reflow soldering, the temperature is controlled at 240-260°C. At this temperature, the vacuum reflow soldering concentrates heat on the first material 210, causing it to melt, as it is formed from any of SnSb5, multi-alloy solder paste, and SAC305. Meanwhile, the second material 230, fourth material 270, and fifth material 290 formed from PbSnAg remain solid, ensuring the stability of the power semiconductor component. Since the melting point of PbSnAg is higher than that of SnSb5, multi-alloy solder paste, and SAC305, the PbSnAg in the power semiconductor component does not melt when the temperature is controlled at 240-260°C.

[0250] Optionally, in step S160, the first material 210 is heated by sintering. During sintering, the first material 210 receives less external force and is in a relatively static state, making it easier to control the diffusion area after the first material 210 melts.

[0251] In step S160, when sintering and heating the first material 210, an eleventh material combination can be used. In the eleventh material combination, the first material 210 can be made of nano-silver, the second material 230 can be made of PbSnAg, the fourth material 270 can be made of PbSnAg, and the fifth material 290 can be made of PbSnAg.

[0252] In step S160, the eleventh material combination is applied. When the first material 210 is heated by sintering, the temperature is controlled at 270-290°C. At this time, sintering causes the temperature of the first material 210 to rise, and the first material 210 formed by nano-silver softens to form larger intermolecular forces. Meanwhile, the second material 230, the fourth material 270, and the fifth material 290 formed by PbSnAg remain solid, so that the power semiconductor component remains stable.

[0253] Understandably, when sintering and heating the first material 210, micron-sized silver or copper particles can also be used for the first material 210. When the first material 210 is heated and softened, the second material 230, the fourth material 270 and the fifth material 290 remain solid.

[0254] The power semiconductor module fabrication method described above involves first encapsulating the power semiconductor component. This encapsulation forms a single, individual part, allowing for individual fabrication and improving automation and processing speed. Pre-encapsulated power semiconductor components can undergo pre-testing, ensuring a tight seal after connection to the heat sink and improving yield. Assembling the heat sink with the encapsulated power semiconductor component reduces the risk of stress damage from the encapsulation process, enhancing reliability. This method of first encapsulating the power semiconductor component and then connecting it to the heat sink improves the sealing performance of the power semiconductor module, enabling reliable water cooling, maintaining the module's temperature, and improving its output performance.

[0255] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in this application should be covered within the scope of this application.

Claims

1. A method of manufacturing a power semiconductor module, characterized by, The method comprises: forming a power semiconductor assembly by plastic packaging a power device, forming a first heat dissipation surface on a surface of the power semiconductor assembly; providing a second arc-shaped section on the first heat sink, the second arc-shaped section corresponding to a position of the power device on the first heat sink; heating a first material between the first heat sink and the first heat dissipation surface; cooling the first material on the first heat dissipation surface to connect the power semiconductor assembly and the first heat sink, the step of forming a power semiconductor assembly by plastic packaging a power device, comprising: welding a first substrate to one side of the power device by a second material, the first substrate forming the first heat dissipation surface away from the one side of the power device; the melting point of the second material is higher than that of the first material, and the second material remains solid when the first material is heated, after the step of welding a first substrate to one side of the power device by a second material, further comprising: providing a first arc-shaped section on the first substrate, the first arc-shaped section being located in the middle of the first substrate.

2. The power semiconductor module production method according to claim 1, characterized by, the step of forming a power semiconductor assembly by plastic packaging a power device, further comprising: the power device comprises a first piece and a second piece, and a conductor strip is welded to the one side of the power device away from the first substrate by a third material, the conductor strip connecting the first piece and the second piece; the melting point of the third material is equal to or higher than that of the first material.

3. The method of producing a power semiconductor module according to claim 2, wherein the step of heating a first material between the first heat sink and the first heat dissipation surface, comprising: heating the first material by ultrasonic soldering.

4. The method of producing a power semiconductor module according to claim 3, wherein the temperature range of the ultrasonic soldering is 150-180℃, the first material comprises a multi-element alloy solder paste, the second material comprises sintered silver, and the third material comprises SAC305.

5. The method of producing a power semiconductor module according to claim 3, wherein the temperature range of the ultrasonic soldering is 210-220℃, the first material comprises SnSb5, the second material comprises sintered silver, and the third material comprises SnSb5.

6. The method of producing a power semiconductor module according to claim 3, wherein the temperature range of the ultrasonic soldering is 210-220℃, the first material comprises any one of a multi-element alloy solder paste and SAC305, the second material comprises sintered silver, and the third material comprises SnSb5.

7. The method of producing a power semiconductor module according to claim 2, wherein the step of heating a first material between the first heat sink and the first heat dissipation surface, comprising: heating the first material by vacuum reflow soldering, and the melting point of the one with higher melting point between the second material and the third material is higher than that of the first material.

8. The method of producing a power semiconductor module according to claim 7, wherein the temperature range of the vacuum reflow soldering is 210-220℃, the first material comprises any one of a multi-element alloy solder paste and SAC305, the second material comprises sintered silver, and the third material comprises SnSb5.

9. The method of producing a power semiconductor module according to claim 7, wherein the temperature range of the vacuum reflow soldering is 240-260℃, the first material comprises any one of a multi-element alloy solder paste and SAC305, the second material comprises sintered silver, and the third material comprises high-lead solder paste.

10. The method of producing a power semiconductor module according to claim 2, wherein the step of heating a first material between the first heat sink and the first heat dissipation surface, comprising: heating the first material by sintering.

11. The method of producing a power semiconductor module according to claim 10, wherein The sintering temperature ranges from 270 to 290 DEG C, the first material includes nano-silver, the second material includes sintered silver, and the third material includes high-lead tin solder paste.

12. The method of producing a power semiconductor module according to claim 1, wherein In the step of forming the power semiconductor assembly from the plastic-encapsulated power device, further comprising: a side of the power device facing away from the first substrate is soldered with a fourth material to a conductive pad; a side of the conductive pad facing away from the power device is soldered with a fifth material to a second substrate, and a side of the second substrate facing away from the power device forms a second heat dissipation surface; the fourth material has a melting point equal to or higher than that of the first material; the fifth material has a melting point equal to or higher than that of the first material.

13. The method of claim 12, wherein: the step of heating the first material between the first heat sink and the first heat dissipation surface further comprises: heating the first material between a second heat sink and the second heat dissipation surface; the step of heating the first material between the first heat sink and the first heat dissipation surface further comprises: cooling the first material of the second heat dissipation surface to connect the power semiconductor assembly and the second heat sink.

14. The power semiconductor module production method according to claim 13, characterized by, the step of heating the first material between the first heat sink and the first heat dissipation surface comprises: heating the first material by ultrasonic soldering.

15. The method of producing a power semiconductor module according to claim 14, characterized by, the ultrasonic soldering temperature ranges from 150 to 180 DEG C, the first material includes any one of SAC305 and multi-alloy solder paste, the second material includes SnSb5, the fourth material includes SAC305, and the fifth material includes SAC305.

16. The method of producing a power semiconductor module according to claim 14, wherein the ultrasonic soldering temperature ranges from 210 to 220 DEG C, the first material includes any one of SAC305, multi-alloy solder paste, and SnSb5, the second material includes PbSnAg, the fourth material includes SnSb5, and the fifth material includes SnSb5.

17. The method of producing a power semiconductor module according to claim 13, wherein the step of heating the first material between the first heat sink and the first heat dissipation surface comprises: heating the first material by vacuum reflow soldering.

18. The method of producing a power semiconductor module according to claim 17, wherein the vacuum reflow soldering temperature ranges from 210 to 220 DEG C, the first material includes any one of SAC305 and multi-alloy solder paste, the second material includes PbSnAg, the fourth material includes SnSb5, and the fifth material includes SnSb5.

19. The method of producing a power semiconductor module according to claim 17, wherein the vacuum reflow soldering temperature ranges from 240 to 260 DEG C, the first material includes any one of SAC305, multi-alloy solder paste, and SnSb5, the second material includes PbSnAg, the fourth material includes PbSnAg, and the fifth material includes PbSnAg.

20. The method of producing a power semiconductor module according to claim 13, wherein the step of heating between the first heat sink and the first heat dissipation surface comprises: heating the first material by sintering.

21. The method of producing a power semiconductor module according to claim 20, wherein the sintering temperature ranges from 270 to 290 DEG C, the first material includes nano-silver, the second material includes PbSnAg, the fourth material includes PbSnAg, and the fifth material includes PbSnAg.

22. The method of producing a power semiconductor module according to claim 1, wherein Before the step of heating the first material between the first heat sink and the first heat dissipating surface, further comprising: attaching a metal plating layer outside the first heat sink, the metal plating layer comprising any one or more of Ag, Ni, Sn and Au.

23. The method of producing a power semiconductor module according to claim 1, wherein Before the step of heating the first material between the first heat sink and the first heat dissipating surface, further comprising: providing the first heat dissipating surface with a height piece for identifying the amount of the first material, the height piece comprising any one of: providing a metal material on the first heat dissipating surface, the metal material protruding from the first heat dissipating surface to form the height piece; providing a protrusion fixedly on the first heat dissipating surface, the protrusion forming the height piece; providing a recess on the first heat dissipating surface, the recess forming the height piece.

24. The method of producing a power semiconductor module according to claim 1 or 12, characterized by, After the step of forming the power semiconductor assembly from the plastic-encapsulated power device, further comprising: cutting the power semiconductor.

25. The method of producing a power semiconductor module according to claim 12, wherein Before the step of welding the second substrate to the side of the conductive gasket facing away from the power device by the fifth material, further comprising: providing a third arc segment on the second substrate, the third arc segment being located in the middle of the second substrate.

26. The method of producing a power semiconductor module according to claim 13, wherein Before the step of heating the first material between the first heat sink and the first heat dissipating surface, further comprising: providing a fourth arc segment on the second heat sink, the fourth arc segment being located on the second heat sink corresponding to the position of the power device.

27. A power semiconductor module, characterized by made using the method of manufacturing a power semiconductor module according to any one of claims 1-26. made using the method of manufacturing a power semiconductor module according to any one of claims 1-26.

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