Device for controlling captured ions

Abstract

An apparatus for controlling the capture of ions includes a first substrate. A second substrate is disposed above the first substrate. One or more first-level ion traps are configured to capture ions in the space between the first and second substrates. One or more second-level ion traps are configured to capture ions in the space above the second substrate. An opening is provided in the second substrate through which ions can transfer between the first-level and second-level ion traps.

Description

Technical Field

[0001] This disclosure generally relates to the field of trapped ions, and particularly to apparatus and methods for controlling trapped ions for quantum computing. Background Technology

[0002] Trapped ions are among the most promising candidates for use as qubits (qubits) in quantum computers because they can be trapped in scalable arrays with long lifetimes using electromagnetic fields. Currently, state-of-the-art ion traps can individually control approximately 50 qubits and can keep up to 16 qubits in a fully entangled state. Future quantum computers will need to increase the number of controllable qubits to over 100 or even 1000 to outperform classical supercomputers. Furthermore, the number of ions used per qubit will likely increase to approximately 6 to 100 ions in the future to allow for more efficient error correction during quantum computing.

[0003] As the number of ions increases, the area required for devices used to control the captured ions (such as quantum computing devices) also increases. Assuming an average distance of 10 to 100 μm between adjacent ions and a ion count of 10,000, the total required area could be as large as 100 cm². 2 Up to 1m 2 .

[0004] Another problem that arises when the number of ions is increased proportionally is the increase in decoherence caused by optical crosstalk. That is, manipulating and reading out the electronic state of a particular ion may produce scattered light that can undesirably interact with other ions.

[0005] Therefore, increasing the number of ions captured simultaneously while maintaining the ability to control and measure them individually is one of the main challenges in developing practical quantum computing.

[0006] The concepts used to address these challenges are lateral ion shuttles and long-range entanglement between spatially separated ions. However, there remains a need to scale up existing systems for capturing ions and to develop devices for controlling larger numbers of ion qubits. Summary of the Invention

[0007] According to one aspect of this disclosure, an apparatus for controlling the capture of ions includes a first substrate. A second substrate is disposed above the first substrate. One or more first-level ion traps are configured to capture ions in the space between the first and second substrates. One or more second-level ion traps are configured to capture ions in the space above the second substrate. An opening is provided in the second substrate through which ions can transfer between the first-level and second-level ion traps.

[0008] According to another aspect of this disclosure, a method for controlling trapped ions in an apparatus having a first substrate and a second substrate disposed above the first substrate is disclosed. One or more first-level ion traps are configured to trap ions in the space between the first and second substrates. One or more second-level ion traps are configured to trap ions in the space above the second substrate. An opening is provided in the second substrate through which ions can transfer between the first and second-level ion traps. The method includes transferring ions between the first and second-level ion traps through the opening. Attached Figure Description

[0009] The elements in the accompanying drawings are not necessarily drawn to scale relative to each other. The same reference numerals denote corresponding similar parts. Features of the various illustrated embodiments can be combined unless they are mutually exclusive, and / or may be selectively omitted if not explicitly required. Embodiments are depicted in the accompanying drawings and are described in exemplary detail in the following description.

[0010] Figure 1A This is a schematic cross-sectional view of an exemplary device for controlling trapped ions, the device comprising three or more substrates stacked on top of each other.

[0011] Figure 1B This is a schematic cross-sectional view of an exemplary device for controlling trapped ions, the device comprising two or more substrates stacked on top of each other.

[0012] Figure 2 This is a schematic cross-sectional view of an exemplary device for controlling captured ions, wherein a substrate is provided with a multilayer electrode structure.

[0013] Figure 3A This is a schematic perspective view of an exemplary radio frequency (RF) rail electrode arrangement (without substrate and DC electrode) for transferring ions through openings in a substrate.

[0014] Figure 3B yes Figure 3A A schematic cross-sectional view in the XZ plane of an exemplary RF rail electrode arrangement (where the substrate and DC electrode are not visible).

[0015] Figure 3C yes Figure 3A and 3B A schematic cross-sectional view of an exemplary RF rail electrode arrangement (with a substrate and a DC electrode) in the YZ plane.

[0016] Figure 4 This is a schematic cross-sectional view in the XZ plane of a movable microelectromechanical system (MEMS) element used for transferring ions through an opening in a substrate.

[0017] Figure 5A This is a schematic cross-sectional view in the YZ plane of an exemplary point ion trap for transferring ions through an opening in a substrate.

[0018] Figure 5B yes Figure 5A A schematic cross-sectional view of an exemplary point ion trap in the XZ plane.

[0019] Figure 5C yes Figures 5A-5B A schematic cross-sectional view of the upper and lower substrates of an exemplary point ion trap in the XY plane.

[0020] Figure 6 This is a flowchart depicting the stages of a method for controlling captured ions in an apparatus according to the present disclosure. Detailed Implementation

[0021] The terms "above" or "below" in relation to the formation, positioning, setting, arrangement, or placement of a component, element, or layer of material "above" or "below" a surface may be used herein to indicate that the component, element, or layer of material is positioned (e.g., placed, formed, arranged, set, placed, etc.) "directly on" or "directly below" the surface implied by "above" or "below" the surface implied, such as being in direct contact with the implied surface. However, the terms "above" or "below" used herein to refer to the formation, positioning, setting, arrangement, or placement of a component, element, or layer of material "above" or "below" a surface may also be used herein to indicate that the component, element, or layer of material is positioned (e.g., placed, formed, arranged, deposited, etc.) "indirectly on" or "indirectly below" the surface implied by "above" or "below" the surface implied, wherein one or more additional components, elements, or layers are arranged between the implied surface and the component, element, or layer of material.

[0022] refer to Figure 1A The device 100 for controlling the captured ions may include a first substrate 120, a second substrate 140, and a third substrate 160. The second substrate 140 is disposed above the first substrate 120 in the Z direction, while the third substrate 160 is disposed above the second substrate in the Z direction. The Z direction may represent the height dimension of the device 100.

[0023] The second substrate 140 is spaced apart from the first substrate 120 in the Z direction, and the space between the first substrate 120 and the second substrate 140 is hereinafter referred to as the first space. Similarly, the third substrate 160 is spaced apart from the second substrate 140 in the Z direction, and the space between the second substrate 140 and the third substrate 160 is hereinafter referred to as the second space. It should be noted that the first and / or second and / or third substrates do not necessarily have to be separate components, but may also be formed (integrally) from a single piece (e.g., a piece provided with trenches to implement the space between the substrates).

[0024] The first, second, and third substrates 120, 140, and 160 can be flat and can be oriented parallel to each other. Figure 1A In this embodiment, the parallelism of the first, second, and third substrates 120, 140, and 160 is exemplarily depicted in the X direction, and may also be applied, for example, in the Y direction. The X and Y directions are perpendicular to each other and define a plane in the length and width directions of the device 100, which is perpendicular to the Z direction.

[0025] The first, second, and third substrates 120, 140, and 160 may, for example, comprise, or be semiconductor substrates, such as Si, SiC, or GaN substrates, individually or in combination. Other substrate materials, such as, for example, insulators (e.g., glass, quartz, sapphire, etc.), polymers (printed circuit boards (PCBs)), or ceramics, may also be possible. The distance between the first substrate 120 and the second substrate 140, and the distance between the second substrate 140 and the third substrate 160, may be equal or different, and may each be in the range of, for example, 100 μm to 400 μm, particularly 200 μm to 300 μm. The first substrate 120, the second substrate 140, and the third substrate 160 may each have a thickness in the range of, for example, 200 μm to 1000 μm, 300 μm to 750 μm, particularly 400 μm to 500 μm.

[0026] As will be described in further detail below, the first space (defined by the first substrate 120 and the second substrate 140) includes one or more first-level ion traps configured to trap ions in the first space. Similarly, the second space (defined by the second substrate 140 and the third substrate 160) includes one or more second-level ion traps configured to trap ions in the second space. That is, the device 100 is a three-dimensional (3D) device for controlling trapped ions. Ions can be controlled in at least one lateral direction in the first space and in at least one lateral direction in the second space. More specifically, ions can be controlled at a first level in the X and / or Y directions in the first space and at a second level in the X and / or Y directions in the second space. The movement of ions within the first and / or second spaces is also referred to as the "lateral shuttle" of ions. If ions are trapped in the first and / or second spaces, these ions do not move in the Z or vertical directions.

[0027] Furthermore, the second substrate 140 includes an opening 145 through which ions can transfer between a first-level ion trap that traps ions in the first space and a second-level ion trap that traps ions in the second space. The opening 145 allows for the transfer of ions held in the first space to the second space and / or allows for the transfer of ions held in the second space to the first space. The term “opening” as used herein is to be interpreted broadly and includes any free space that allows such ion transfer, such as a hole in the second substrate, a groove or cutout at the edge of the second substrate, or simply the free space between the edge of the second substrate and the wall elements of the device 100. In the example above, ions transfer from the first space to the second space along the Z-direction. This ion transfer is also referred to herein as “vertical shuttle” of ions.

[0028] Still referencing Figure 1A Multiple ions 180_1 are captured by one or more first-level ion traps (not shown), which are configured to capture ions 180_1 in a first space. Figure 1A A plurality of ions 180_2 captured by one or more second-level ion traps (not shown) are also shown, the second-level ion traps being configured to capture ions 180_2 in a second space. Arrow A1 indicates possible transfer or exchange of first-level ions 180_1 to the second space and / or second-level ions 180_2 to the first space.

[0029] It should be noted that device 100 may include three or more substrates, and therefore include two or more spaces between opposing substrates. These additional substrates are arranged relative to each other in the same manner as described above for the three substrates 120, 140, 160. For example, device 100 may include a fourth substrate (not shown) disposed in the Z direction above the third substrate 160 to define a third space between the third substrate 160 and the fourth substrate. In this case, the third substrate 160 may have an opening (not shown) similar to the opening 145 of the second substrate 140 to allow ion transfer between the second and third spaces. The opening (not shown) in the third substrate 160 may be aligned with the opening 145 in the second substrate 140, or may be located at another location in the XY plane. When referring to the exemplary device 100, all disclosures (features, dimensions, functions, etc.) can be similarly applied to devices 100 having four, five, six, seven, ... substrates, or more.

[0030] Furthermore, it should be noted that the device 100 for controlling the captured ions can optionally be implemented without a substrate. Similar to the device 100 described above, this device includes a first-level ion trap and a second-level ion trap, the first-level ion trap configured to trap ions at a first level and the second-level ion trap configured to trap ions at a second level, wherein the first and second levels are spaced apart in the vertical direction (i.e., the Z-direction). The device also includes a component for transferring ions between the first-level and second-level ion traps. Examples of such components will be explained in further detail below. In other words, all devices disclosed herein combine lateral shuttle of ions at two different energy levels with vertical shuttle of ions between these two different energy levels. It should be noted that the features, functions, etc., described by the example of the substrate-containing device 100 can also be applied to substrate-free devices.

[0031] The device 100 for controlling the captured ions can perform many different functions in terms of ion generation, processing and control.

[0032] In the loaded region, ions are trapped and cooled in one or more ion traps. Typically, ions are generated by evaporation of bulk material using thermal or laser-based methods to produce neutral atoms. Laser-based neutral atom ionization allows for trapping in the ion traps (which will be described in more detail below). The ions are then cooled by employing laser cooling and stored in the loaded region for later use. Since evaporation and ionization typically require high-energy lasers, the loaded region is prone to generating surface charges. Therefore, efficient separation between the loaded region and other regions (see below) is beneficial in the device used to control the trapped ions.

[0033] Trapped and cooled ions from the loading region can be transferred to the processing region. In the processing region, quantum operations between the trapped ions can be performed. Furthermore, if the ions are trapped as qubits, the qubit state can optionally be read out. Typically, the processing region requires laser access for laser-based state preparation of the trapped ions and for reading out the qubit state. Fluorescence from the ions may need to be collected for state measurement. Additionally, the trapped ions in the processing region need to be protected from scattered light and interfering electric fields. Therefore, high optical accessibility and high interference shielding (optical, magnetic, and electrical shielding) are desirable for the processing region.

[0034] Figure 1A The diagram schematically illustrates a laser 190 (e.g., from a state preparation laser, readout laser, cooling laser, etc.) directed to the second-level ion 180_2 and scattered photons (arrow A2) scattered by the second-level ion 180_2. (As shown from...) Figure 1A It is obvious that neither laser 190 nor the scattered photon (arrow A2) can reach the ion 180_1 captured in the first space.

[0035] One or more storage regions can be implemented in the device 100 for controlling the captured ions. The storage regions are used to store ions in a cooled state so that they can remain available for later use, for example, in the processing region. For example, between quantum computing operations, ions from the processing region can be transferred to the storage region and then returned to the processing region. Ions in the storage regions can be packed more densely because no quantum computing is performed in the storage regions (note that multi-qubit operations use inter-ion Coulomb interactions to entangle the internal and dynamic states of the captured ions for gate operations such as, for example, CNOT (controlled not)).

[0036] Therefore, the more ions used (e.g., as qubits), the more important it is the availability of ions in a cooled state and thus the implementation of one or more storage regions in device 100.

[0037] Alternatively, a separate readout area may be provided in device 100. In this case, ions from the processing area are transferred to the readout area after processing. The readout area should have high optical accessibility and may also have high interference shielding (optical, magnetic, and electrical shielding). As previously mentioned, the readout function can alternatively be implemented in the processing area.

[0038] As an example, the processing region can be arranged in a second space above the second substrate 140, while the loading region can be arranged in a first space between the first substrate 120 and the second substrate 140. This efficiently separates the loading region and the processing region.

[0039] More specifically, scattered photons (arrow A2) and / or laser 190 (e.g., state preparation laser, readout laser, cooling laser, etc.) from the processing region will not reach the ion 180_1 trapped in the first space. Similarly, the ion 180_2 trapped in the second space and used, for example, for quantum operations in the processing region will not be affected by high-energy (e.g., UV) lasers from the loading region and / or from interfering surface charges generated in the loading region.

[0040] The storage region can be arranged in a first space between the first substrate 120 and the second substrate 140 and / or in a second space above the second substrate 140. Alternatively, the first space may not include a loading region but rather a "storage level," i.e., it may include one or more storage regions. The second space, which can then be used to implement a processing region, can then be supplied with ions from the "storage level" as needed. In this case, the loading region can be implemented, for example, in a separate "loading level" below the "storage level" or above the "processing level." In one example, the "storage level" may be a dedicated "storage level" that does not contain a loading region and does not contain a processing region.

[0041] Typically, the concept of providing at least two separate ion control levels in the Z-direction provides 3D ion control devices (e.g., configured as quantum computing devices), which advantageously utilize the third dimension (in the Z-direction) to enhance functionality and ion control. In particular, the 3D concept allows for an increased number of ions compared to a 2D device of the same area. Furthermore, optical crosstalk can be efficiently suppressed through the 3D concept, i.e., by providing a second substrate 140 with an opening 145. Therefore, the area requirements and crosstalk limitations of quantum computing are mitigated by the higher packing density made available through the utilization of the third dimension (in the Z-direction).

[0042] In other words, in the 3D ion control device 100 disclosed herein, different energy levels separated by one or more substrates with openings (here, a second substrate 140 with opening 145) are used to mitigate the effects of crosstalk and relax size constraints when the number of ions increases.

[0043] Figure 1B A device 100' for controlling the captured ions is shown. Device 100' is Figure 1A A variation of device 100. Device 100' and Figure 1A The difference in device 100 may be only that a third substrate 160 is not used. In this case, the ions 180_2 trapped in the second space are trapped in one or more so-called surface electrode ion traps. The surface electrode ion trap contains all the electrodes for trapping ions in a single plane (e.g., here in the plane defined by the upper surface of the second substrate 140).

[0044] Device 100' may have the advantage of enhanced optical proximity to ions 180_2 trapped in the second space (e.g., ions held in the processing region). Apart from this difference, device 100' may be the same as device 100, and to avoid repetition, refer to the description above.

[0045] refer to Figure 2 An exemplary device 200 for controlling trapped ions, wherein the first, second, and (optionally) third substrates 120, 140, 160 are microstructured semiconductor substrates, such as microstructured silicon chips or wafers. Device 200 may be designed according to device 100 or 100', and to avoid repetition, refer to the description above.

[0046] The first substrate 120 is provided with an upper multilayer electrode structure 120_2 implemented on the top side of the first substrate 120. The second substrate 140 is provided with a lower multilayer electrode structure 140_1 implemented on the bottom side of the second substrate 140 and an upper multilayer electrode structure 140_2 implemented on the top side of the second substrate 140. In addition, a third substrate 160 (if present) may be provided with a lower multilayer electrode structure 160_1 implemented on the bottom side of the third substrate 160. Each substrate, especially the second substrate 140, may be a multilayer substrate (i.e., a substrate formed by connecting (e.g., bonding, gluing) at least two substrate layers together, wherein each substrate layer is metallized (e.g., the lower substrate layer of the second substrate 140 is provided with the lower multilayer electrode structure 140_1, while the upper substrate layer is provided with the upper multilayer electrode structure 140_2).

[0047] Multilayer electrode structures 120_2, 140_1, 140_2, and 160_1 are configured to form ion traps. More specifically, one or more first-level ion traps include an upper multilayer electrode structure 120_2 on a first substrate 120 and a lower multilayer electrode structure 140_1 on a second substrate 140. Furthermore, one or more second-level ion traps include: an upper multilayer electrode structure 140_2 on the second substrate 140; and, if present, a lower multilayer electrode structure 160_1 on a third substrate 160. As previously mentioned, the third substrate 160 is optional, but its presence increases the potential depth of the second-level ion trap compared to a surface electrode second-level ion trap without the third substrate 160.

[0048] One or more ion traps implemented in the first energy level (i.e., the first space between the first and second substrates 120, 140) and one or more ion traps implemented in the second energy level (i.e., the second space above the second substrate 140) can have different functions and / or different designs. The ion traps can have an RF Paul trap design. A Paul trap can have an electrode layout that results in RF trapping in all three dimensions (referred to as a point trap), or it can have an electrode layout that results in two-dimensional RF trapping plus electrostatic field trapping in the third dimension (referred to as a linear ion trap). In a point ion trap, there is only one point (referred to as the RF zero) where the RF field is zero, while a linear ion trap typically has a zero RF field present along a line (referred to as the RF zero line).

[0049] The multilayer electrode structures 120_2, 140_1, 140_2, and 160_1 may each comprise three metal layers. The bottommost metal layer, the so-called metal 1 (m1), can be configured to optically and electrically shield the respective substrates 120, 140, and 160. Metal 1 can be a continuous metal layer without openings (except at opening 145). Metal 2 (m2), the metal layer above metal 1, can be a redistribution layer, i.e., a structured metal layer for wiring. Metal 2 can be electrically insulated from metal 1 by an insulating layer disposed between metal 1 and metal 2. Metal 3 (m3) (the top metal layer) can define an electrode arrangement for one or more ion traps. Therefore, metal 3 is typically a structured metal layer comprising radio frequency electrodes and optional DC electrodes. Metal 3 is electrically connected to metal 2 via vias (not shown) that pass through the electrically insulating layer disposed between metal 2 and metal 3.

[0050] Metal layers m1, m2, and m3 can be fabricated during front-end processing (FEOL) semiconductor manufacturing. The insulating layer between metal layers m1, m2, and m3 can, for example, include silicon nitride and / or silicon oxide, or may have silicon nitride and / or silicon oxide.

[0051] The first, second, and third substrates 120, 140, and 160 may be spaced apart by a spacer element 210. The spacer element 210 may define the distance between the first, second, and third substrates 120, 140, and 160. The spacer element may, for example, be provided with one or more optical ports to allow laser light to be introduced and / or focused into one or more of the spaces between adjacent substrates 120, 140, and 160.

[0052] Various methods can be used to transfer ions from one energy level to another through opening 145. A first exemplary transfer device is as follows: Figures 3A-3C The RF rail electrode arrangement extends through the opening 145 as shown in the view.

[0053] refer to Figure 3A The continuous radio frequency rail electrodes 320_1 and 320_2 can have the same shape and be spaced apart in the Y direction. They can follow a U-shaped turn, which begins at the upper multilayer electrode structure 120_2 implemented on the top side of the first substrate 120, continues through the opening 145 and ends at the lower multilayer electrode structure 160_1 of the third substrate 160.

[0054] The continuous RF rail electrodes 340_1 and 340_2 may also have the same shape and be spaced apart in the Y direction. They may follow a U-shaped turn, which begins at the lower multilayer electrode structure 140_1 implemented on the bottom side of the second substrate 140, continues through the opening 145 and ends at the upper multilayer electrode structure 140_2 of the second substrate 140.

[0055] The dashed line represents the radio frequency zero. Therefore, Figures 3A-3C The radio frequency rail electrode arrangement shown can be, for example, a continuous ion trap consisting of three linear ion traps directly connected to each other and extending horizontally in the first energy level, extending vertically through the opening 145 between the first and second energy levels and extending horizontally in the second energy level.

[0056] Figure 3C A cross-sectional view along the top side of the first substrate 120 is shown. In addition to the RF rail electrodes 320_1 and 320_2, DC electrodes 350_1 and 350_2 are arranged adjacent to the RF rail electrodes 320_1 and 320_2, respectively. The DC electrodes 350_1 and 350_2 can be arranged in a row along their respective RF rail electrodes 320_1 and 320_2, and have opposite polarities during operation.

[0057] like Figure 3C The illustrated RF and DC electrode structures can also be formed in the lower multilayer electrode structure 140_1 and upper multilayer electrode structure 140_2 of the second substrate 140, and in the lower multilayer electrode structure 160_1 of the third substrate 160. As previously described, the RF rail electrodes 320_1, 320_2, 340_1, 340_2 and the DC electrodes 350_1, 350_2 can be in the metal 3 (see...) Figure 2 Structured in )

[0058] It should be noted that the DC electrodes 350_1 and 350_2 and the RF rail electrodes 320_1 and 320_2 are formed on the spacer element 210 in the vertical direction. When the RF rail electrodes 320_1 and 320_2 define the RF zero position in the Y direction, the DC electrodes 350_1 and 350_2 define the actual minimum potential in the X direction.

[0059] refer to Figure 4The shuttle between the ion trap in the first energy level and the ion trap in the second energy level can also be achieved by a movable microelectromechanical system (MEMS) element 410. The MEMS element 410 can be a movable element that can switch between a first position and a second position, wherein in the first position the first energy level and the second energy level remain separated from each other, that is, in the first position the opening 145 is closed for ion transfer, while in the second position ions 180_1 are guided from the first energy level to the second energy level through the opening 145.

[0060] For example, MEMS element 410 may include a first movable radio frequency (RF) electrode 410_1 and a second movable RF electrode 410_2. The movable RF electrodes 410_1 and 410_2 can be moved along arrow A3 to switch between two MEMS element positions. When the movable RF electrodes 410_1 and 410_2 are in the lower position, ion transfer from the first energy level to the second energy level along the diagonal RF zero line is possible. When the first RF electrode 410_1 and the second RF electrode 410_2 are in the upper position, the RF electrodes 410_1 and 410_2 can form part of an ion trap located in the second energy level, thereby closing the entrance for ion transfer between the first and second energy levels.

[0061] As an example, the radio frequency electrodes 410_1, 410_2 can be formed of a metal tongue or spring (e.g., having a thickness of a few micrometers (μm)), which can be elastically deflected by means of an actuator (not shown). The actuator can be, for example, a capacitive or electrostatic actuator.

[0062] According to the example, MEMS element 410 can repeatedly switch from one position to another and vice versa. However, it is also possible that MEMS element 410 can switch from one position (e.g., an open start position) to another position (e.g., a closed permanent end position) only once. In another example, MEMS element 410 can be implemented in a first position on a first substrate 120. After the first substrate 120 is disposed on a second substrate 140, MEMS element 410 moves to a second position to extend toward the second substrate 140, thereby forming ion orbitals or channels.

[0063] refer to Figures 5A-5CAnother approach for transferring ions between different energy levels of 3D devices 100, 100', 200 for ion control (and, for example, quantum computing) is based on a point ion trap implementation configured to transfer ions between a first-level ion trap and a second-level ion trap. The point ion trap method requires neither movable mechanical components nor radio frequency rail electrodes passing through opening 145. Instead, ions 180_1 held in a first-level ion trap (e.g., a linear ion trap) can be transferred from the first-level ion trap to the point ion trap, then the ions are raised to the second level by the point ion trap and then transferred as ion 180_2 from the point ion trap to the second-level ion trap (e.g., a linear ion trap).

[0064] More specifically, Figure 5C The left side shows the electrode arrangement formed by the multilayer electrode structure 120_2 on the first substrate 120, while Figure 5C The right side shows the corresponding electrode arrangement formed by the lower multilayer electrode structure 160_1 of the third substrate 160. A linear ion trap can be formed by DC electrodes 550_1 and 550_2 of opposite polarities and RF rail electrodes 320_1 and 320_2. A point ion trap 570 providing vertical ion movement can include DC electrodes 570_1 and 570_2 of opposite polarities, an annular segment RF electrode 570_3, and a DC inlet electrode 570_4. Furthermore, Figure 5C The left-center portion shows the electrode arrangement of a linear ion trap formed by the lower multilayer electrode structure 140_1 of the second substrate 140, while Figure 5C The right-center portion shows the electrode arrangement of a linear ion trap formed by the upper multilayer electrode structure 140_2 of the second substrate 140. These electrode arrangements of the linear ion trap can be formed by DC electrodes 550_1, 550_2 of opposite polarities and radio frequency (RF) rail electrodes 320_1, 320_2, which are respectively arranged opposite to the corresponding RF rail electrodes 320_1, 320_2 in the upper multilayer electrode structure 120_2 of the first substrate 120 and the lower multilayer electrode structure 160_2 of the third substrate 160.

[0065] The point ion trap 570 allows for strictly vertical movement of ions 180_1 and 180_2. That is, the point ion trap 570 at the first substrate 120 ( Figure 5C The left part) is used to guide ion 180_1 along arrow A4 (see Figure 5B ) is transferred to the point ion trap 570 formed on the third substrate 160 (see Figure 5CThe elevator (right side). The point ion trap 570 at the third substrate 160 can seamlessly allow ion 180_1 to catch up with the second energy level, and then the ion can be transported as the second energy level ion 180_2 in the lateral direction (see arrow A4) from the point ion trap 570 into another second energy level ion trap, such as a linear ion trap.

[0066] If a point ion trap method is used to transfer ions between the first and second energy levels, ions can be received from and / or distributed in different lateral directions. That is, the point ion trap 570 can simultaneously change the lateral direction of ion transfer and the energy level at which the ions are held. Therefore, the point ion trap method adds another degree of freedom to ion shuttle between energy levels, as can be achieved by... Figures 3A-3C The "ion orbital" method or Figure 4 This is achieved through the "ion ramp" method. For example, when Figure 5C When the linear ion trap on the left is oriented in the X direction, Figure 5C The linear ion trap on the right could, for example, be oriented in the Y direction (instead of also in the X direction as depicted). In other words, Figure 5B Arrow A4 in the diagram can represent "horizontal shuttle" in any lateral direction, rather than in the X direction shown as an example.

[0067] All devices 100, 100', 200 disclosed herein may be microfabricated semiconductor devices comprising a semiconductor substrate 120, 140, 160 and a multilayer electrode structure implemented by semiconductor metallization technology.

[0068] A method for controlling the captured ions in, for example, the apparatus disclosed above may include the step of capturing ions in the space between the first substrate and the second substrate in S1.

[0069] In S2, ions in the first energy level ion trap in the space between the first substrate and the second substrate are transferred to the second energy level ion trap in the space above the second substrate through an opening in the second substrate.

[0070] In S3, the ions in the second-level ion trap can optionally be used, for example, to perform quantum operations between the captured ions and / or read out the qubit state.

[0071] A further option is to store and / or cool ions in the first or second energy level, as previously described. That is, in each energy level, ions can be transported to different destinations in different lateral directions for different functions (e.g., ion generation, ion state preparation, ion manipulation, qubit state readout, ion storage, etc.).

[0072] The following examples relate to further aspects of this disclosure:

[0073] Example 1 is an apparatus for controlling the capture of ions. The apparatus includes a first substrate. A second substrate is disposed above the first substrate. One or more first-level ion traps are configured to capture ions in the space between the first and second substrates. One or more second-level ion traps are configured to capture ions in the space above the second substrate. An opening is provided in the second substrate through which ions can transfer between the first and second-level ion traps.

[0074] In Example 2, the subject of Example 1 may optionally include a third substrate disposed above the second substrate, wherein the space above the second substrate is defined by the third substrate.

[0075] In Example 3, the subject matter of Example 1 or 2 may optionally include: wherein the first substrate and / or the second substrate is a semiconductor substrate.

[0076] In Example 4, the subject matter of any of the foregoing examples may optionally include: wherein a first substrate is provided with an upper multilayer electrode structure implemented on the top side of the first substrate; and the second substrate is provided with a lower multilayer electrode structure implemented on the bottom side of the second substrate and an upper multilayer electrode structure implemented on the top side of the second substrate; wherein the one or more first energy level ion traps include the upper multilayer electrode structure of the first substrate and the lower multilayer electrode structure of the second substrate, and the one or more second energy level ion traps include the upper multilayer electrode structure of the second substrate.

[0077] In Example 5, the subject matter of any of the foregoing examples may optionally include: a loading region disposed in the space between a first substrate and a second substrate, in which ions are generated, cooled, and trapped in one or more first-level ion traps; and a processing region disposed in the space above the second substrate, in which ions are trapped in one or more second-level ion traps and quantum operations between the trapped ions are performed in the processing region. Optionally, the qubit state is read out in the processing region.

[0078] In Example 6, the subject of Example 5 may optionally include: a storage region in which ions are stored in a cooled state, the storage region being arranged in the space between the first substrate and the second substrate or in the space above the second substrate.

[0079] In Example 7, the subject matter of any of the foregoing examples may optionally include: wherein one or more first-level ion traps comprise linear ion traps, and one or more second-level ion traps comprise linear ion traps.

[0080] In Example 8, the subject matter of any of the foregoing examples may optionally include: a movable microelectromechanical system (MEMS) element configured to transfer ions between a first-level ion trap and a second-level ion trap.

[0081] In Example 9, the subject of any of the foregoing examples may optionally include: a point ion trap configured to transfer ions between a first-level ion trap and a second-level ion trap.

[0082] In Example 10, the subject matter of any of the foregoing examples may optionally include: a radio frequency rail electrode arrangement extending through an opening and configured to transfer ions between a first-level ion trap and a second-level ion trap.

[0083] In Example 11, the subject matter of any of the foregoing examples may optionally include at least one of a second-level linear ion trap oriented in the transverse X direction and a second-level linear ion trap oriented in the transverse Y direction, wherein the X direction is perpendicular to the Y direction; wherein the ions may be transferred through the opening in a direction having a component in the Z direction, the Z direction being perpendicular to the plane defined by the X direction and the Y direction.

[0084] Example 12 is a method for controlling captured ions in an apparatus comprising: a first substrate; a second substrate disposed above the first substrate; one or more first-level ion traps configured to capture ions in a space between the first substrate and the second substrate; one or more second-level ion traps configured to capture ions in a space above the second substrate; and an opening in the second substrate, wherein the method comprises: transferring ions between the first-level ion traps and the second-level ion traps through the opening.

[0085] In Example 13, the subject matter of Example 12 may optionally include: generating, cooling, and trapping ions in the space between the first substrate and the second substrate.

[0086] In Example 14, the subject matter of Example 12 or 13 may optionally include: performing quantum operations between trapped ions and reading out the state of the qubits in the space above the second substrate.

[0087] In Example 15, the subject matter of any of Examples 12 to 14 may optionally include: storing and cooling ions in the space between the first substrate and the second substrate and / or in the space above the second substrate.

[0088] In Example 16, the subject matter of any of Examples 12 to 15 may optionally include transferring ions between a first-level ion trap and a second-level ion trap through an opening by: setting a movable MEMS element in the transfer location, or by using a point ion trap to raise or lower ions through the opening, or by arranging RF rail electrodes extending through the opening to guide ions.

[0089] Example 17 is a device for controlling the capture of ions. The device includes a first-level ion trap and a second-level ion trap, the first-level ion trap being configured to capture ions in a first level, and the second-level ion trap being configured to capture ions in a second level, the first and second levels being spaced apart in a vertical direction. The device also includes components for transferring ions between the first-level and second-level ion traps.

[0090] Example 18 is a method for controlling the capture of ions in an apparatus including a first-level ion trap configured to capture ions in a first energy level and a second-level ion trap configured to capture ions in a second energy level, the first and second energy levels being spaced apart in a vertical direction. The method also includes transferring ions between the first-level and second-level ion traps.

[0091] Although specific embodiments have been shown and described herein, those skilled in the art will understand that various alternatives and / or equivalent embodiments can be substituted for the specific embodiments shown and described without departing from the scope of the invention. This application is intended to cover any modifications or variations of the specific embodiments discussed herein. Therefore, the invention is intended to be limited only by the claims and their equivalents.

Claims

1. An apparatus for controlling the capture of ions, the apparatus comprising: First substrate; A second substrate is disposed above the first substrate; One or more first-level ion traps are configured to trap ions in the space between the first substrate and the second substrate; One or more second-level ion traps are configured to trap ions in a space above the second substrate to perform quantum operations between the trapped ions in the space above the second substrate and to read out the qubit state in the space above the second substrate. as well as The opening in the second substrate allows ions to transfer between the first-level ion trap and the second-level ion trap.

2. The apparatus according to claim 1, further comprising: A third substrate is disposed above the second substrate, wherein the space above the second substrate is defined by the third substrate.

3. The apparatus of claim 1 or 2, wherein, The first substrate and / or the second substrate are semiconductor substrates.

4. The apparatus according to any one of claims 1-2, wherein, The first substrate is provided with an upper multilayer electrode structure implemented on the top side of the first substrate; as well as The second substrate has a lower multilayer electrode structure disposed on the bottom side of the second substrate and an upper multilayer electrode structure disposed on the top side of the second substrate; wherein, The one or more first-level ion traps include the upper multilayer electrode structure of the first substrate and the lower multilayer electrode structure of the second substrate, and The one or more second-level ion traps include the multilayer electrode structure on the second substrate.

5. The apparatus according to any one of claims 1-2 further comprises: A loading region is disposed in the space between the first substrate and the second substrate, in which ions are generated, cooled and trapped in one or more first-level ion traps; as well as A processing region is arranged in the space above the second substrate, in which the ions are trapped in the one or more second-level ion traps, and the quantum operations between the trapped ions are performed in the processing region.

6. The apparatus according to claim 5, further comprising: A storage region in which ions are stored in a cooled state is disposed in the space between the first substrate and the second substrate or in the space above the second substrate.

7. The device of any of the preceding claims 1-2, wherein, The one or more first-level ion traps include linear ion traps, and the one or more second-level ion traps include linear ion traps.

8. The apparatus according to any one of claims 1-2 further comprises: A movable microelectromechanical system (MEMS) element is configured to transfer ions between a first-level ion trap and a second-level ion trap.

9. The apparatus according to any one of claims 1-2, further comprising: A point ion trap is configured to transfer ions between a first energy level ion trap and a second energy level ion trap.

10. The apparatus according to any one of claims 1-2, further comprising: The radio frequency rail electrode arrangement extends through the opening and is configured to transfer ions between the first energy level ion trap and the second energy level ion trap.

11. The apparatus according to any one of claims 1-2, further comprising at least one of the following: A second-level linear ion trap oriented in the transverse X direction, and A second-level linear ion trap oriented in the transverse Y-direction, wherein the X-direction is perpendicular to the Y-direction; wherein... The ions can be transferred through the opening in a direction having a component in the Z direction, which is perpendicular to the plane defined by the X and Y directions.

12. A method for controlling captured ions in an apparatus, the apparatus comprising: First substrate; A second substrate is disposed above the first substrate; One or more first-level ion traps are configured to trap ions in the space between the first substrate and the second substrate; One or more second-level ion traps are configured to trap ions in the space above the second substrate; as well as The opening in the second substrate, The method includes: Ions are transferred between the first-level ion trap and the second-level ion trap through the opening; as well as Quantum operations between the captured ions are performed in the space above the second substrate, and the qubit state is read out.

13. The method of claim 12, further comprising: Ions are generated, cooled, and trapped in the space between the first substrate and the second substrate.

14. The method according to any one of claims 12 to 13, further comprising: Ions are stored and cooled in the space between the first substrate and the second substrate and / or in the space above the second substrate.

15. The method according to any one of claims 12 to 13, further comprising: Ions are transferred between the first energy level ion trap and the second energy level ion trap through the opening via the following steps: The movable MEMS element is placed in the transfer location, or By means of a point ion trap, the passage of ions through the opening is increased or decreased, or The ions are guided by radio frequency rail electrodes arranged along the opening.

16. An apparatus for controlling the capture of ions, the apparatus comprising: First substrate; A second substrate is disposed above the first substrate; One or more first-level ion traps are configured to trap ions in the space between the first substrate and the second substrate; One or more second-level ion traps are configured to trap ions in a space above the second substrate to perform quantum operations between the trapped ions in the space above the second substrate. as well as The opening in the second substrate allows ions to transfer between the first-level ion trap and the second-level ion trap.

17. A method for controlling captured ions in an apparatus, the apparatus comprising: First substrate; A second substrate is disposed above the first substrate; One or more first-level ion traps are configured to trap ions in the space between the first substrate and the second substrate; One or more second-level ion traps are configured to trap ions in the space above the second substrate; as well as The opening in the second substrate, The method includes: Ions are transferred between the first-level ion trap and the second-level ion trap through the opening; as well as Quantum operations between the captured ions are performed in the space above the second substrate.

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