Apparatus and method for processing a substrate

Abstract

The present invention relates to an apparatus and a method for processing a substrate. The method for processing a substrate includes processing a substrate by dispensing a chemical solution onto the substrate while rotating the substrate, wherein a ground conductive member in direct contact with the substrate or the chemical solution is included in a support unit that supports and rotates the substrate, a current detector is provided on a ground path between the ground conductive member and the ground, and a processing condition of the substrate is controlled based on a current value detected by the current detector.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0131363, filed with the Korean Intellectual Property Office on October 12, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to an apparatus and method for processing substrates (such as wafers). Background Technology

[0004] Semiconductor devices are typically manufactured by depositing various materials in thin films onto a substrate and then patterning those films. This requires various processes, such as deposition, photolithography, etching, and cleaning.

[0005] In these processes, etching is the process of removing the film formed on the substrate, and cleaning is the process of removing residual contaminants from the substrate after each unit process in the manufacture of semiconductor devices. Etching and cleaning processes are divided into wet processes and dry processes, and wet processes are further divided into batch-type processes and spin-type processes.

[0006] In a rotary process, a substrate is clamped to a support unit capable of supporting the substrate, and a chemical solution dispensing nozzle dispenses a chemical solution (e.g., etching solution, cleaning solution, or rinsing solution) onto the rotating substrate. The chemical solution dispensed onto the substrate is dispersed across the entire surface of the substrate by centrifugal force to clean it. After cleaning, the substrate is dried using various methods.

[0007] Rotary substrate handling apparatuses perform cleaning processes on rotating substrates, generating static electricity due to chemical solutions dispensed onto the rotating substrate and other factors. This static electricity can adversely affect equipment operation and the substrate (e.g., arc damage or particle re-adhesion). To address this issue, chuck pins and a rotating shaft are connected by wires, and the charge on the substrate is released to the outside through these wires. Therefore, damage to the substrate due to arc damage and particle re-adhesion due to static electricity can be prevented. Summary of the Invention

[0008] The present invention provides a substrate processing apparatus and method for improving the efficiency of processing substrates.

[0009] Embodiments of the present invention provide a substrate processing apparatus and method for obtaining data including information about a substrate from a component and utilizing the obtained data, the component being used to release static electricity generated by chemical solutions dispensed onto a rotating substrate and other causes.

[0010] The technical problems to be solved by the present invention are not limited to those described above, and any other technical problems not mentioned herein will be clearly understood by those skilled in the art from the following description.

[0011] According to one embodiment, an apparatus for processing a substrate includes: a cup-shaped structure having a process space therein; a support unit supporting the substrate in the process space and including a rotatable support plate; a chemical solution dispensing unit dispensing a chemical solution onto the substrate supported on the support unit; and a conductive member in direct contact with at least one of the substrate or the chemical solution dispensed onto the substrate. The conductive member is grounded, and a current detector is disposed on the grounding path between the grounded conductive member and ground.

[0012] In one embodiment, the conductive member may be a chuck pin on the side surface of the supporting substrate.

[0013] In one embodiment, the support unit may include a plurality of support pins disposed on a support plate and supporting a substrate located above the support plate, and the conductive member may be implemented using at least one of the support pins.

[0014] In one embodiment, the current detector can be implemented using a highly sensitive element that measures currents in the nanoampere (nA) or less.

[0015] In one embodiment, the support plate may be rotatable at a first rotational speed and a second rotational speed lower than the first rotational speed.

[0016] In one embodiment, the chemical solution dispensing unit can dispense two or more different chemical solutions.

[0017] In one embodiment, the current detector can detect the current value in real time when the chemical solution is dispensed onto the substrate.

[0018] In one embodiment, the device may further include a data processing unit that processes the current value detected by the current detector.

[0019] In one embodiment, when the detected current value is greater than or equal to a preset threshold, the data processing unit can determine that the substrate is defective.

[0020] In one embodiment, the chemical solution dispensing unit can dispense a first chemical solution and a second chemical solution different from the first chemical solution, and the first chemical solution dispensed onto the substrate can be replaced by the second chemical solution. During the process of the first chemical solution being replaced by the second chemical solution, when the detected change in current value is greater than or equal to a preset value, the data processing unit can determine that the first chemical solution has been replaced by the second chemical solution.

[0021] In one embodiment, during the process of the substrate being treated with a chemical solution, when the detected change in current value is greater than or equal to a preset value, the data processing unit can determine that the substrate has been completely treated with the chemical solution.

[0022] According to one embodiment, a method for processing a substrate includes processing the substrate by dispensing a chemical solution onto the substrate while rotating the substrate, wherein a grounding conductive member in direct contact with the substrate or the chemical solution is included in a support unit that supports and rotates the substrate, a current detector is provided on a grounding path between the grounding conductive member and ground, and the processing conditions of the substrate are controlled based on the current value detected by the current detector.

[0023] In one embodiment, the current detector can be implemented using a highly sensitive element that measures currents in the nanoampere (nA) or less.

[0024] In one embodiment, the current detector can detect the current value in real time when the chemical solution is dispensed onto the substrate.

[0025] In one embodiment, when the detected current value is greater than or equal to a preset threshold, it can be determined that the substrate is defective.

[0026] In one embodiment, the substrate may be treated with a first chemical solution and a second chemical solution different from the first chemical solution. The first chemical solution applied to the substrate may be replaced by the second chemical solution. During the process of the first chemical solution being replaced by the second chemical solution, when the detected change in current value is greater than or equal to a preset value, it can be determined that the first chemical solution has been replaced by the second chemical solution.

[0027] In one embodiment, during the process of the substrate being treated with a chemical solution, when the detected change in current value is greater than or equal to a preset value, it can be determined that the substrate has been completely treated.

[0028] In one embodiment, the conductive member may include: a chuck pin that supports a side surface of the substrate; and at least one support pin that supports a bottom surface of the substrate.

[0029] According to one embodiment, an apparatus for processing a substrate includes: a cup-shaped structure having a process space therein; a support unit supporting the substrate in the process space and including a support plate rotatable at a first rotational speed and a second rotational speed lower than the first rotational speed; and a chemical solution dispensing unit dispensing a first chemical solution and a second chemical solution different from the first chemical solution onto the substrate supported on the support unit. The support unit further includes: a chuck pin supporting a side surface of the substrate; and a plurality of support pins disposed on the support plate and supporting the substrate located above the support plate. At least one of the plurality of support pins and the chuck pin are grounded. The apparatus further includes: a current detector disposed on a grounding path between a grounded chuck pin or at least one grounded support pin and ground, and measuring a current of nanoampere (nA) or less; and a data processing unit processing the current value detected by the current detector.

[0030] In one embodiment, the current detector can detect the current value in real time when the first chemical solution or the second chemical solution is applied to the substrate. During the substrate treatment with the first chemical solution, when the detected change in current value is greater than or equal to a preset value, the data processing unit can determine that the substrate has been completely treated by the first chemical solution. Furthermore, during the process of the first chemical solution being replaced by the second chemical solution, when the detected change in current value is greater than or equal to a preset value, the data processing unit can determine that the first chemical solution has been replaced by the second chemical solution. Attached Figure Description

[0031] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, the same reference numerals refer to the same parts in the various drawings, and wherein:

[0032] Figure 1 This is a schematic plan view illustrating a substrate processing apparatus according to an embodiment of the present invention;

[0033] Figure 2 This is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment;

[0034] Figure 3 It shows the setting Figure 2 A schematic plan view of the support unit in the substrate processing apparatus;

[0035] Figure 4 It shows the setting Figure 2 A schematic cross-sectional view of the interior of a support unit in a substrate processing apparatus;

[0036] Figure 5This is a view showing the state in which a first chemical solution is dispensed onto a substrate supported on a support unit, which is arranged according to... Figure 2 In the substrate processing apparatus of the implementation scheme;

[0037] Figure 6 This is a view showing the state in which the second chemical solution is dispensed onto a substrate supported on a support unit, which is arranged according to... Figure 2 In the substrate processing apparatus of the implementation scheme;

[0038] Figure 7 This is a view showing the state of dispensing a first chemical solution when a substrate supported on a support unit rotates at a first rotational speed, the support unit being arranged according to... Figure 2 In the substrate processing apparatus of the implementation scheme;

[0039] Figure 8 This is a view showing the state of dispensing a first chemical solution when a substrate supported on a support unit rotates at a second rotational speed, the support unit being arranged according to... Figure 2 In the substrate processing apparatus of the implementation scheme;

[0040] Figure 9 It is a graph representing the amount of electric current by the charge escaping through the ground;

[0041] Figure 10 This is a view showing the state in which a third chemical solution is dispensed onto a substrate supported on a support unit, which is arranged according to... Figure 2 In the substrate processing apparatus of the embodiment; and

[0042] Figure 11 It shows that the membrane is covered in Figure 10 A view showing the state changes of a third chemical solution continuously distributed under the given conditions. Detailed Implementation

[0043] The above and other aspects, features, and advantages of the inventive concept will become apparent from the following description of embodiments given in conjunction with the accompanying drawings. However, the inventive concept is not limited to the embodiments disclosed herein, and its scope should be limited only by the appended claims and their equivalents. Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept pertains. General descriptions relating to well-known configurations will be omitted where they may unnecessarily obscure the subject matter of the inventive concept. Where possible, the same reference numerals are used to refer to the same or corresponding parts in the drawings of the inventive concept.

[0044] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the inventive concept. Unless otherwise specified, singular terms may include plural forms. It should be understood that terms such as “comprising,” “including,” and “having” as used herein specify the presence of stated features, numbers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, quantities, steps, operations, components, parts, or combinations thereof.

[0045] Hereinafter, embodiments of the inventive concept will be described in more detail with reference to the accompanying drawings. However, the inventive concept can be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the inventive concept will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. In the drawings, the dimensions of components are enlarged and reduced for clarity of illustration.

[0046] Figure 1 This is a schematic plan view showing a substrate processing apparatus 1 according to an embodiment of the present invention.

[0047] Reference Figure 1 The substrate processing apparatus 1 includes an indexing module 10 and a process module 20. The indexing module 10 has a loading port 120 and a transfer frame 140. The loading port 120, the transfer frame 140, and the process module 20 are arranged in a row in sequence. Hereinafter, the direction in which the loading port 120, the transfer frame 140, and the process module 20 are arranged is referred to as the first direction 12, the direction perpendicular to the first direction 12 when viewed from above is referred to as the second direction 14, and the upward direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction 16.

[0048] A carrier 18 is situated on a loading port 120, the carrier having a substrate W received therein. Multiple loading ports 120 can be provided. The loading ports 120 can be arranged in a row in the second direction 14. The number of loading ports 120 can be increased or decreased depending on the process efficiency and footprint of the process module 20. The carrier 18 has multiple slots (not shown) formed therein, in which the substrate W is received in a horizontally positioned state relative to ground. A front-opening unified pod (FOUP) can be used as the carrier 18.

[0049] Process module 20 includes a buffer unit 220, a transfer chamber 240, and a process chamber 260. The transfer chamber 240 is configured such that its longitudinal direction is parallel to the first direction 12. Process chambers 260 are disposed on opposite sides of the transfer chamber 240. On opposite sides of the transfer chamber 240, process chambers 260 are configured to be symmetrical with respect to the transfer chamber 240. Process chambers 260 are disposed on one side of the transfer chamber 240. Some of the process chambers 260 are disposed along the longitudinal direction of the transfer chamber 240. Furthermore, other process chambers 260 are stacked one on top of the other. That is, the process chambers 260 can be arranged in an A×B array on one side of the transfer chamber 240. Here, "A" represents the number of process chambers 260 arranged in a row along the first direction 12, and "B" represents the number of process chambers 260 arranged in a column along the third direction 16. When four or six process chambers 260 are arranged on one side of the transfer chamber 240, the process chambers 260 can be arranged in a 2×2 or 3×2 array. The number of process chambers 260 can be increased or decreased. Alternatively, the process chambers 260 can be arranged only on one side of the transfer chamber 240. In another case, the process chambers 260 can be arranged in a single layer on the opposite side of the transfer chamber 240.

[0050] A buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides space for the substrate to remain in place before it is transferred between the transfer chamber 240 and the transfer frame 140. The buffer unit 220 has a plurality of slots (not shown) in which the substrate W is placed. The slots (not shown) are spaced apart from each other along a third direction 16. The buffer unit 220 is open on the side facing the transfer frame 140 and on the opposite side facing the transfer chamber 240.

[0051] The transfer frame 140 transfers the substrate W between the carrier 18 placed on the loading port 120 and the buffer unit 220. An index track 142 and an indexing robot 144 are disposed within the transfer frame 140. The index track 142 is configured such that its longitudinal direction is parallel to a second direction 14. The indexing robot 144 is mounted on the index track 142 and moves linearly along the index track 142 in the second direction 14. The indexing robot 144 has a base 144a, a body 144b, and an indexing arm 144c. The base 144a is movable along the index track 142. The body 144b is coupled to the base 144a. The body 144b is movable on the base 144a along a third third direction 16. Furthermore, the body 144b is rotatable on the base 144a. The indexing arm 144c is coupled to the body 144b and is movable forward and backward relative to the body 144b. Multiple indexing arms 144c can be provided. The index arms 144c can be driven independently. The index arms 144c are stacked one on top of the other along a third direction 16, with gaps between them. Some of the index arms 144c can be used to transfer the substrate W from the process module 20 to the carrier 18, while other index arms 144c can be used to transfer the substrate W from the carrier 18 to the process module 20. Therefore, during the process of the indexing robot 144 transferring the substrate W between the carrier 18 and the process module 20, particles generated from the substrate W to be processed can be prevented from adhering to the processed substrate W.

[0052] The transfer chamber 240 transfers substrate W between the buffer unit 220 and the process chamber 260, and between the process chambers 260. A guide rail 242 and a main robot 244 are disposed in the transfer chamber 240. The guide rail 242 is configured such that its longitudinal direction is parallel to a first direction 12. The main robot 244 is mounted on the guide rail 242 and moves linearly along the guide rail 242 along the first direction 12. The main robot 244 has a base 244a, a body 244b, and a main arm 244c. The base 244a is movable along the guide rail 242. The body 244b is coupled to the base 244a. The body 244b is movable on the base 244a along a third direction 16. Furthermore, the body 244b is rotatable on the base 244a. The main arm 244c is coupled to the body 244b and is movable forward and backward relative to the body 244b. Multiple main arms 244c can be configured. Each main arm 244c can be driven independently. Main arms 244c are stacked one on top of another along a third direction 16, with gaps between them.

[0053] Substrate processing apparatuses 3000 for performing cleaning processes on substrate W are respectively disposed in process chambers 260. The substrate processing apparatuses 3000 may have different structures depending on the type of cleaning process performed therein. Alternatively, the substrate processing apparatuses 3000 in each process chamber 260 may have the same structure. Optionally, the process chambers 260 may be divided into multiple groups. Substrate processing apparatuses 3000 in process chambers 260 belonging to the same group may have the same structure, while substrate processing apparatuses 3000 in process chambers 260 belonging to different groups may have different structures. For example, when the process chambers 260 are divided into two groups, the first group of process chambers 260 may be disposed on one side of the transfer chamber 240, while the second group of process chambers 260 may be disposed on the opposite side of the transfer chamber 240. Optionally, on the opposite side of the transfer chamber 240, the first group of process chambers 260 may be disposed in the lower layer, while the second group of process chambers 260 may be disposed in the upper layer. Depending on the type of chemical solution or cleaning method used, the first set of process chambers 260 can be distinguished from the second set of process chambers 260. In contrast, the first set of process chambers 260 and the second set of process chambers 260 can sequentially perform processes on the substrate W. For example, the substrate W can undergo a chemical solution treatment process or a rinsing process in the first set of process chambers 260, and can undergo a rinsing process or a drying process in the second set of process chambers 260.

[0054] The following describes an embodiment of a substrate processing apparatus 3000 that cleans a substrate W using a chemical solution. The substrate processing apparatus 3000 performs chemical solution processing on the substrate W. The chemical solution may include phosphoric acid solution, sulfuric acid solution, hydrofluoric acid, deionized water (DIW), CO2-containing water, or isopropanol (IPA).

[0055] Figure 2 This is a schematic cross-sectional view showing the substrate processing apparatus 3000.

[0056] The substrate processing apparatus 3000 is disposed in the process chamber 260.

[0057] The substrate processing apparatus 3000 includes a cup-shaped object 320, a support unit 340, a lifting unit 360, and a chemical solution dispensing unit 380.

[0058] The cup-shaped object 320 has a process space in which substrate processing processes are performed. The cup-shaped object 320 is open at its top. The cup-shaped object 320 has an inner recycling bowl 322, a middle recycling bowl 324, and an outer recycling bowl 326. The recycling bowls 322, 324, and 326 recycle different chemical solutions used in the substrate processing processes. The inner recycling bowl 322 has an annular shape surrounding the support unit 340. The middle recycling bowl 324 has an annular shape surrounding the inner recycling bowl 322. The outer recycling bowl 326 has an annular shape surrounding the middle recycling bowl 324.

[0059] The inner space 322a of the inner recovery bowl 322, the space 324a between the inner recovery bowl 322 and the intermediate recovery bowl 324, and the space 326a between the intermediate recovery bowl 324 and the outer recovery bowl 326 serve as inlets through which the chemical solution flows into the inner recovery bowl 322, the intermediate recovery bowl 324, and the outer recovery bowl 326. Recovery lines 322b, 324b, and 326b extend vertically downward from the bottom surface of the recovery bowls 322, 324, and 326. The recovery lines 322b, 324b, and 326b discharge the chemical solution introduced into the recovery bowls 322, 324, and 326. The discharged chemical solution can be reused using an external chemical solution regeneration system (not shown).

[0060] The lifting unit 360 linearly moves the cup-shaped object 320 in the up / down direction. As the cup-shaped object 320 moves in the up / down direction, its height relative to the support unit 340 changes. The lifting unit 360 has a bracket 362, a movable shaft 364, and an actuator 366. The bracket 362 is fixed to the outer wall of the cup-shaped object 320 and is fixedly coupled to the bracket 362 by the movable shaft 364, which moves in the up / down direction via the actuator 366. When the substrate W is placed on or lifted upward from the support unit 340, the cup-shaped object 320 moves downward to allow the support unit 340 to protrude above the cup-shaped object 320. Furthermore, when performing a substrate processing process, the height of the cup-shaped object 320 is adjusted according to the type of chemical solution dispensed onto the substrate W, so that the chemical solution is introduced into preset recovery bowls 322, 324, and 326. Selectively, the lifting unit 360 can move the support unit 340 in the up / down direction.

[0061] A chemical solution dispensing unit 380 dispenses a chemical solution onto a substrate W during a substrate processing process. The chemical solution dispensing unit 380 includes a support shaft 386, an actuator 388, a nozzle support rod 382, ​​and a nozzle 384. The support shaft 386 is configured such that its longitudinal direction is parallel to a third direction 16, and the actuator 388 is coupled to the lower end of the support shaft 386. The actuator 388 rotates, raises, and lowers the support shaft 386. The nozzle support rod 382 is coupled perpendicularly to the upper end of the support shaft 388, with the upper end of the support shaft 388 opposite to the lower end of the support shaft 386, and the actuator 388 is coupled to the lower end of the support shaft 386. The nozzle 384 is mounted on the bottom surface of the distal portion of the nozzle support rod 382. The nozzle 384 is moved between a process position and a standby position by the actuator 388. The process position is when the nozzle 384 is directly above the cup-shaped object 320, and the standby position is when the nozzle 384 is offset from directly above the cup-shaped object 320.

[0062] The chemical solution dispensing unit 380 of the substrate processing apparatus 3000 can receive chemical solution from the chemical solution storage tank 400. The chemical solution storage tank 400 is connected to a first supply line 410, which is also connected to the chemical solution dispensing unit 380 of the substrate processing apparatus 3000. An on / off valve can be connected in series with the first supply line 410.

[0063] Figure 3 It shows Figure 2 A schematic plan view of the support unit 340 of the substrate processing apparatus 3000, and Figure 4 It shows Figure 2 A schematic plan view of the interior of the support unit 340 of the substrate processing apparatus 3000. (Refer to...) Figure 3 and Figure 4 The support unit 340 of the substrate processing apparatus 3000 is described.

[0064] Reference Figure 3 and Figure 4 The support unit 340 supports and rotates the substrate W during the process. The support unit 340 includes a support plate 342, a support pin 344, a chuck pin 346, a chuck pin moving unit 347, and a rotation shaft 348.

[0065] When viewed from above, the support plate 342 has a generally circular upper surface. Support pins 344 protrude upwards from the edge region of the upper surface of the support plate 342. The support pins 344 are spaced apart from each other at a predetermined distance along the circumferential direction of the support plate 342 and support the edge region of the bottom surface of the substrate W. All support pins 344 have the same shape and size. Each of the support pins 344 includes an upper portion 344a whose diameter gradually increases towards the bottom and a lower portion 344b extending downwards from the upper portion 344a and having a constant diameter. A cylindrical protrusion 344c extending in the longitudinal direction of the support pin 344 is provided on the bottom surface of the lower portion 344b of the support pin 344. The protrusion 344c has a smaller diameter than the lower portion 344b of the support pin 344. The outer surface of the support pin 344 is coated with a conductive material. For example, the conductive material may be conductive ceramic.

[0066] The chuck pins 346 protrude upward from the edge region of the upper surface of the support plate 342. The chuck pins 346 are spaced apart from each other at a predetermined distance along the circumference of the support plate 342. The chuck pins 346 are positioned further from the center of the support plate 342 than the support pins 344. The chuck pins 346 support the sides of the substrate W such that the substrate W does not deviate from its correct position when rotated. All chuck pins 346 have the same shape and size. Each of the chuck pins 346 includes a support portion 346a, a center portion 346c, a fixing portion 346e, and a stop portion 346d. The support portion 346a has a shape in which the diameter gradually decreases and then increases downward from the flat upper surface. Therefore, the support portion 346a has a recessed portion 346b that is recessed inward when viewed from the front. The sides of the substrate W, placed on the support pins 344, contact the recessed portion 346b. A central portion 346c extends downward from the lower end of a support portion 346a and has the same diameter as the lower end of the support portion 346a. A fixing portion 346e extends downward from the central portion 346c. A threaded hole is formed in the fixing portion 346e for coupling between the fixing portion 346e and the chuck pin moving unit 347. A stop portion 346d extends outward from the central portion 346c and has a ring shape. The stop portion 346d is in close contact with the upper surface of the support plate 342 and allows the chuck pin 346 to protrude to the same height.

[0067] The chuck pin 346 can be formed from a material that is corrosion-resistant, fire-resistant, and heat-resistant, such as SiC ceramic, carbon PFA, or carbon PEEK.

[0068] The chuck pin moving unit 347 moves the chuck pin 346 between a supported position and a standby position. In the supported position, the chuck pin 346 contacts the side of the substrate W, while in the standby position, the chuck pin 346 provides a wider space than the substrate W, allowing the substrate W to rest on the support unit 340. The supported position is closer to the center of the support plate 342 than the standby position. The chuck pin moving unit 347 includes moving rods 347a, each of which is coupled to a chuck pin 346. The moving rods 347a are disposed inside the support plate 342 in the same direction as the radial direction of the support plate 342. The chuck pin 346 and the moving rods 347a can be coupled by screws.

[0069] A rotating shaft 348 is fixedly coupled to the bottom surface of a support plate 342, and supports and rotates the support plate 342. The rotating shaft 348 has a hollow cylindrical shape. The rotating shaft 348 protrudes outside the cup-shaped member 320 through an opening formed in the bottom of the cup-shaped member 320. The lower end of the rotating shaft 348 protruding outside the cup-shaped member 320 is fixedly coupled to a motor 349. The motor 349 provides torque to the rotating shaft 348, and the rotating shaft 348 is rotatable by the torque.

[0070] Grounding wire 345 is connected to chuck pin 346. Chuck pin 346 releases charge from substrate W or chemical solution L to the outside via grounding wire 345. Grounding wire 345 is formed of conductive material. Grounding wire 345 can be disposed inside moving rod 347a. Grounding wire 345 can be connected to grounding pin 349a. Grounding pin 349a is electrically connected to motor 349. Grounding pin 349a connected to motor 349 releases charge generated in substrate W to the outside. Therefore, charge in substrate W is released to the outside via chuck pin 346, grounding wire 345, and grounding pin 349a. Current detector 600 can be installed downstream of grounding pin 349a. Current detector 600 can measure the amount of current released to ground and can be implemented using a micro-ammeter capable of measuring micro-currents. For example, current detector 600 can be implemented using a high-sensitivity element capable of measuring currents of nA or less.

[0071] Although the current detector 600 is installed downstream of the grounding pin 349a according to the embodiment, the current detector 600 can be connected in series with the grounding wire 345 and / or the grounding wire 351. Alternatively, even without the grounding pin 349a, the current detector 600 can be connected in series with a wire combining the grounding wires 345 and 351. The current detector 600 can transmit the detected current value to the data processing unit 700. The data processing unit 700 may include a central processing unit (CPU), a read-only memory (ROM), and a random access memory (RAM). The data processing unit 700 can transmit the detected current value received from the current detector 600 to an external device via an output unit (not shown) (e.g., a display device). The current detector 600 can detect the current in real time, and the data processing unit 700 can receive and process the data in real time.

[0072] The support pin grounding member 350 releases the charge in the substrate W to the outside through the support pin 344. The support pin grounding member 350 includes a spring 350a and a rod 350b. The spring 350a and the rod 350b are formed of a metallic material. The rod 350b is disposed in the radial direction of the support plate 342. One end of the spring 350a is connected to the support pin 344, and the opposite end of the spring 350a is connected to the rod 350b. The rod 350b can be connected to the grounding pin 349a via a grounding wire 351. Therefore, the charge in the substrate W is released to the outside through the support pin 344, the spring 350a, the rod 350b, and the grounding pin 349a. Unlike the above description, the spring 350a may have a hollow cylindrical shape surrounding the support pin 344. Therefore, the spring 350a can maximize the surface area in contact with the support pin 344 and can release the charge in the substrate W more effectively. Furthermore, rod 350b can be directly connected to support pin 344 without spring 350a, and can release the charge in substrate W to the outside.

[0073] Unlike the above implementation, chuck pin 346 may be grounded, while support pin 344 may not be grounded. In one implementation, support pin 344 may be grounded, while chuck pin 346 may not be grounded.

[0074] The lower nozzle 354 supplies a chemical solution or process gas to the lower surface of a substrate W placed on a support unit 340. The substrate W is positioned above a support plate 342 at a predetermined distance from the upper surface of the support plate 342, and the lower nozzle 354 supplies the chemical solution or process gas into the space between the support plate 342 and the substrate W. The lower nozzle 354 has a spray head 354a. The spray head 354a has an upwardly convex shape and protrudes upward from the support plate 342. The spray head 354a includes a plurality of discharge ports 354b and 354c. The discharge ports 354b and 354c dispense one of a variety of chemical solutions, rinsing solutions, and drying gases such as isopropanol vapor or nitrogen. The lower end of the spray head 354a is inserted into a through hole formed in the center of the support plate 342. The chemical solution and / or drying gas supplied from the nozzle 384 and the lower nozzle 354 cleans the substrate W by diffusing from the central region to the edge region of the upper or lower surface of the substrate W through the rotation of the support plate 342. Furthermore, this embodiment is not limited to devices for cleaning both sides of a substrate, but can be equally applied to substrate rotation devices capable of cleaning only one side of a substrate. In this case, unlike double-sided cleaning devices, single-sided cleaning devices may not include the lower nozzle 354, but may include a blowing unit (not shown) that penetrates the rotation shaft 348 and supplies blowing gas to the back side of the substrate.

[0075] The lower nozzle 354 includes a first discharge port 354b mounted at the center of the upper surface of the support plate 342. The first discharge port 354b is connected to the DIW supply line 526 and is located at the center of the support plate 342. The DIW dispensed from the first discharge port 354b cleans the bottom surface of the substrate W by spreading from the central region to the edge region of the bottom surface of the substrate W through rotation of the substrate W.

[0076] The DIW dispensed from the lower nozzle 354 can be supplied in a heated state. When the bottom surface of the substrate W is cleaned by the lower nozzle 354, the heated DIW not only improves the cleaning efficiency but also performs the function of heating the substrate W.

[0077] DIW supply line 526 is connected to DIW supply source 522. DIW supply source 522 is equipped with heater 524. Heater 524 can heat the DIW stored in DIW supply source 522. Alternatively, heater 524 can be mounted on DIW supply line 526. One end of DIW supply line 526 is connected to DIW supply source 522, and the opposite end of DIW supply line 526 is connected to first discharge port 354b. DIW supply line 526 is connected to first discharge port 354b via a hollow portion of support unit 340. Additionally, a discharge line (not shown) branching from DIW supply line 526 may be further included.

[0078] The first valve 527, acting as an on / off valve, is connected in series with the DIW supply line 526. Furthermore, a back-suction valve (not shown) for immediately back-suctioning heated DIW remaining in the first discharge port 354b after DIW is dispensed can be connected in series with the DIW supply line 526. The DIW supply line 526 can preferably be implemented as a conduit. Alternatively, the DIW supply line 526 can be defined by a tubular space in the support unit 340. The temperature of the heated DIW retained in the DIW supply line 526 decreases over time. The efficiency of cleaning the substrate W decreases when low-temperature DIW is dispensed onto the substrate W. A discharge line (not shown) can be used to discharge residual DIW from the DIW supply line 526 to ensure process reproducibility of the heated DIW dispensed onto the bottom surface of the substrate W. That is, before the heated DIW is dispensed onto the bottom surface of the substrate W, the refluxed DIW in the DIW supply line 526 is discharged for a predetermined time period, and only the DIW heated to a preset temperature by the heater 524 is supplied to the first discharge port 354b.

[0079] The DIW can be heated to a temperature above room temperature and can be supplied to the substrate W. Optionally, the DIW can be heated to a temperature above the IPA supplied to the substrate W and can be supplied to the substrate W. According to one embodiment, the DIW can be supplied to the bottom surface of the substrate W at a temperature of 60°C to 80°C.

[0080] According to one embodiment, DIW is supplied to the bottom surface of substrate W, while IPA is supplied to the top surface of substrate W. Therefore, while the drying process is performed on the top surface of substrate W, the cleaning process is simultaneously performed on the bottom surface of substrate W. Furthermore, while IPA is supplied to the top surface of substrate W, heated DIW is supplied to the bottom surface of substrate W. During the drying process of substrate W, the heated DIW prevents a rapid temperature drop on the surface of substrate W due to cooling of condensate dependent on the evaporation of IPA. That is, while drying substrate W by distributing IPA and N2 gas to the surface of substrate W, by distributing heated DIW to the bottom surface of substrate W, the temperature of the entire substrate W is maintained within the range of 60°C to 80°C. To ensure that the DIW has a temperature of 60°C to 80°C when supplied to the bottom surface of substrate W, heater 524 heats the DIW to a temperature slightly higher than 60°C to 80°C. The temperature range can vary depending on the progress of the drying process.

[0081] IPA produces a greater drying effect when supplied to substrate W in a heated state. However, there are limitations to increasing the temperature of the IPA supplied to substrate W when supplying liquid IPA or mixtures thereof. However, when heated DIW is supplied to the bottom surface of substrate W while IPA is supplied to the top surface, substrate W can be heated, and effects similar to those achieved when supplying high-temperature IPA can be obtained. Of course, compared to supplying the cleaning solution at room temperature, the drying efficiency is improved when the heated cleaning solution is supplied to the bottom surface of substrate W while IPA in a vapor state is supplied to the top surface.

[0082] By using a heated DIW to maintain a constant temperature for the substrate W during the drying process, watermarks and particles caused by poor drying can be prevented. Furthermore, since the temperature of the entire substrate W is maintained at a constant level without rapid temperature drops, the time spent drying the substrate W using IPA is reduced, thereby reducing IPA consumption.

[0083] Although examples have been given of using heated liquid DIW as a cleaning fluid, heated nitrogen or steam or mist-like heated DIW can also be used.

[0084] The lower nozzle 354 includes a second discharge port 354c disposed around the first discharge port 354b. The second discharge port 354c is connected to a gas supply line 536. Gas dispensed from the second discharge port 354c contacts the bottom surface of the substrate W as it diffuses from the central region to the edge region of the bottom surface of the substrate W due to rotation of the substrate W. The gas may be nitrogen. The gas may be a drying gas used to dry the back side of the substrate W.

[0085] Gas supply line 536 is connected to gas supply source 534. Ionizer 535 may be connected in series with gas supply line 536. Ionizer 535 ionizes the gas by removing electrons from it. For example, ionizer 535 can make the gas positively charged. Positively charged gas can contact substrate W and can electrically neutralize the static electricity on substrate W.

[0086] Figure 5 This is a view showing the state in which a first chemical solution is dispensed onto a substrate supported on a support unit, which is arranged according to... Figure 2 In the substrate processing apparatus of the implementation scheme. Figure 6 This is a view showing the state in which a second chemical solution is dispensed onto a substrate supported on a support unit, which is arranged according to... Figure 2 In the substrate processing apparatus of the embodiment. For example... Figure 5 and Figure 6As shown, the current value detected when dispensing the first chemical solution C1 may differ from the current value detected when dispensing the second chemical solution C2. This may be because the amount of static electricity generated by friction with the substrate differs due to the different types of chemical solutions.

[0087] Figure 7 This is a view showing the state of dispensing a first chemical solution when a substrate supported on a support unit rotates at a first rotational speed, the support unit being arranged according to... Figure 2 In the substrate processing apparatus of the implementation scheme. Figure 8 This is a view showing the state of dispensing a first chemical solution when a substrate supported on a support unit rotates at a second rotational speed, the support unit being arranged according to... Figure 2 In the substrate processing apparatus of the embodiment. Even when the first chemical solution C1 is as Figure 7 and Figure 8 When the same distribution is shown, different current values ​​can also be detected based on the rotation speed. This may be because the amount of static electricity generated by friction between the first chemical solution and the substrate differs depending on the substrate's rotation speed. In one embodiment, the detected current can increase with increasing substrate rotation speed. That is, the substrate rotation speed can be estimated from the detected current value.

[0088] Figure 9 This is a graph representing the current quantity using the charge escaping through the ground. It can be seen that even when the substrate rotates at the same first rotational speed, there is a difference in detection current of 100 nA or more between the first and second chemical solutions. Furthermore, it can be seen that in the case of the first chemical solution, there is also a difference in detection current of 100 nA or more between the substrate rotating at the first rotational speed and the substrate rotating at the second rotational speed. However, in the case of the second chemical solution, there is no significant difference in detection current between the substrate rotating at the first rotational speed and the substrate rotating at the second rotational speed. Based on these results, when the liquid film is replaced with the second chemical solution instead of the first chemical solution, the replacement of the liquid film with the second chemical solution can be verified by detecting the current quantity. In this case, it is not necessary to use excessive amounts of the second chemical solution, thereby reducing its usage.

[0089] Figure 10 This is a view showing the state in which a third chemical solution is dispensed onto a substrate supported on a support unit, which is arranged according to... Figure 2 In the substrate processing apparatus of the implementation scheme. Figure 11 This indicates that the membrane is covered in Figure 10 A view showing the changing states of a third chemical solution continuously distributed under the given conditions. Even when the third chemical solution C3 is as... Figure 10 and Figure 11When the distribution is the same as shown, different current values ​​can also be detected based on the state of the membrane. This may be because the electrostatic charge generated varies due to different reactions and friction between the membrane exposed on the substrate and the chemical solution. Therefore, it can be determined whether the membrane has been processed to the desired degree by detecting the current. That is, the data processing unit 700 can actively determine the endpoint based on the detected current value.

[0090] Although not described above, when the detected current exceeds a preset threshold, the possibility of defective wafers due to arc discharge can be identified, and the yield rate can be improved accordingly.

[0091] Although not described above, the physical state of a chemical solution, such as temperature, can be estimated from the detected current.

[0092] When excessive current is detected, static electricity can be reduced by turning on the ionizer 535 and supplying positively charged gas to the bottom surface of the substrate.

[0093] According to various embodiments of the present invention, the substrate processing apparatus and method can improve the efficiency of substrate processing.

[0094] According to various embodiments of the present invention, substrate processing apparatus and method can obtain data including information about the substrate from a component applied to release static electricity generated by chemical solutions and other causes dispensed onto a rotating substrate, and can utilize the obtained data to process the substrate efficiently.

[0095] The effects of this invention are not limited to those described above, and any other effects not mentioned herein can be clearly understood by those skilled in the art from this specification and the accompanying drawings.

[0096] The foregoing description illustrates the inventive concept. Furthermore, while the foregoing describes embodiments of the inventive concept, it can be used in various other combinations, variations, and environments. That is, variations or modifications can be made to the inventive concept without departing from the scope of the inventive concept disclosed herein, its equivalents in the written disclosure, and / or the skill or knowledge of those skilled in the art. The written embodiments describe the optimal state for realizing the technical spirit of the inventive concept and various changes can be made as needed for specific applications and purposes of the inventive concept. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed embodiments. Additionally, it should be understood that the appended claims include other embodiments.

[0097] While the inventive concept has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not restrictive but illustrative.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: A cup-shaped object having a process space within it; A support unit configured to support the substrate in the process space, the support unit including a rotatable support plate; A chemical solution dispensing unit, the chemical solution dispensing unit being configured to dispense a chemical solution onto a substrate supported on the support unit; and A conductive member configured to be in direct contact with at least one of the substrate or the chemical solution dispensed onto the substrate. Wherein, the conductive component is grounded, and A current detector is installed on the grounding path between the grounded conductive component and the ground. The device further includes a data processing unit configured to process the current value detected by the current detector. The chemical solution dispensing unit is configured to dispense a first chemical solution and a second chemical solution different from the first chemical solution, wherein the first chemical solution dispensed onto the substrate is replaced by the second chemical solution. In the process of the first chemical solution being replaced by the second chemical solution, when the detected change in current value is greater than or equal to a preset value, the data processing unit determines that the first chemical solution has been replaced by the second chemical solution.

2. The apparatus according to claim 1, wherein, The conductive member is a chuck pin configured to support the side surface of the substrate.

3. The apparatus according to claim 1, wherein, The support unit includes a plurality of support pins, which are disposed on the support plate and configured to support the substrate located above the support plate. The conductive component is implemented using at least one of the plurality of support pins.

4. The apparatus according to claim 1, wherein, The current detector is implemented using a highly sensitive element configured to measure currents of nanoamperes (nA) or less.

5. The apparatus according to claim 1, wherein, The support plate is rotatable at a first rotational speed and a second rotational speed lower than the first rotational speed.

6. The apparatus according to claim 1, wherein, The chemical solution dispensing unit dispenses two or more different chemical solutions.

7. The apparatus according to claim 1, wherein, The current detector detects the current value in real time when the chemical solution is dispensed onto the substrate.

8. The apparatus according to claim 1, wherein, When the detected current value is greater than or equal to a preset threshold, the data processing unit determines that the substrate is defective.

9. The apparatus according to claim 1, wherein, During the process of the substrate being treated by the chemical solution, when the detected change in current value is greater than or equal to a preset value, the data processing unit determines that the substrate has been completely treated by the chemical solution.

10. A method for processing a substrate, the method comprising: The substrate is processed by dispensing a chemical solution onto it while the substrate is rotated. The grounding conductive member configured to be in direct contact with the substrate or the chemical solution is included in a support unit configured to support and rotate the substrate. A current detector is installed on the grounding path between the grounding conductive member and ground, and the processing conditions of the substrate are controlled based on the current value detected by the current detector. The substrate is treated with a first chemical solution and a second chemical solution different from the first chemical solution. Wherein, the first chemical solution dispensed onto the substrate is replaced by the second chemical solution, and Specifically, during the process of the first chemical solution being replaced by the second chemical solution, when the detected change in current value is greater than or equal to a preset value, it is determined that the first chemical solution has been replaced by the second chemical solution.

11. The method according to claim 10, wherein, The current detector is implemented using a highly sensitive element configured to measure currents of nanoamperes (nA) or less.

12. The method according to claim 10, wherein, The current detector detects the current value in real time when the chemical solution is dispensed onto the substrate.

13. The method according to claim 10, wherein, When the detected current value is greater than or equal to a preset threshold, the substrate is determined to be defective.

14. The method of claim 10, wherein, During the process of the substrate being treated by the chemical solution, when the detected change in current value is greater than or equal to a preset value, it is determined that the substrate has been completely treated.

15. The method according to claim 10, wherein, The conductive member includes: a chuck pin configured to support a side surface of the substrate; and at least one support pin configured to support a bottom surface of the substrate.

16. An apparatus for processing a substrate, the apparatus comprising: A cup-shaped object having a process space within it; A support unit configured to support the substrate in the process space, the support unit including a support plate rotatable at a first rotational speed and a second rotational speed lower than the first rotational speed; and A chemical solution dispensing unit is configured to dispense a first chemical solution and a second chemical solution different from the first chemical solution onto a substrate supported on a support unit. The support unit further includes: A chuck pin, configured to support a side surface of the substrate; and A plurality of support pins are disposed on the support plate and configured to support the substrate located above the support plate. Wherein, at least one of the plurality of support pins and the chuck pin are grounded, and The device further includes: A current detector, disposed on a grounding path between a grounded chuck pin or at least one grounded support pin and ground, and configured to measure a current of nanoampere (nA) or less; and A data processing unit is configured to process the current value detected by the current detector, wherein the current detector detects the current value in real time when the first chemical solution or the second chemical solution is dispensed onto the substrate, and The data processing unit includes: During the process of the substrate being treated with the first chemical solution, when the detected change in current value is greater than or equal to a preset value, it is determined that the substrate has been completely treated with the first chemical solution; and During the process of the first chemical solution being replaced by the second chemical solution, when the detected change in current value is greater than or equal to a preset value, it is determined that the first chemical solution has been replaced by the second chemical solution.

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