Electrical circuit and semiconductor module
By configuring the gate current path and the reverse recovery current path in parallel in the IGBT module, the voltage fluctuation and radiated noise problems of the IGBT module during high-speed switching are solved, and optimized control of loss and speed in different current regions is achieved.
CN114365281BActive Publication Date: 2026-07-10FUJI ELECTRIC CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- FUJI ELECTRIC CO LTD
- Filing Date
- 2021-01-21
- Publication Date
- 2026-07-10
Smart Images
Figure CN114365281B_ABST
Abstract
To suppress the electromagnetic radiation noise while suppressing the increase in loss at the time of switching. An electric circuit in which a first switching element (3a) and a first diode element (4a) are connected in antiparallel to form an upper arm, a second switching element (3b) and a second diode element (4b) are connected in antiparallel to form a lower arm, and the upper arm and the lower arm are connected in series, wherein a wiring (F1) connecting the upper arm and the lower arm is arranged in proximity to a gate wiring (F2) of the lower arm in parallel, and the direction of current flowing through the gate wiring of the lower arm is the same as the direction of reverse recovery current flowing from the first diode element of the upper arm to the lower arm.
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