Optoelectronic devices and methods for manufacturing optoelectronic devices

Abstract

An optoelectronic device (1) is proposed, comprising at least one first semiconductor emitter (10) and at least one second semiconductor emitter (20), the semiconductor emitters having active regions (101, 201) and front-coupled output surfaces (102, 202), respectively. The active regions (101, 102) are configured to generate electromagnetic radiation. Furthermore, the optoelectronic device (1) includes a radiation-impermeable capping layer (40) and a carrier (50). The semiconductor emitters (10, 20) are disposed on a first side of the carrier (50). The first semiconductor emitter (10) is configured to emit electromagnetic radiation of a first wavelength range through its coupled output surface (102). The second semiconductor emitter (20) is configured to emit electromagnetic radiation of a second wavelength range through its coupled output surface (202). The first wavelength range and the second wavelength range are at least partially different from each other. The capping layer (40) is formed of a photopolymer and is disposed on the first side of the carrier (50). The capping layer (40) has a coupling output window (60) that extends completely through the capping layer (40), and through this coupling output window, the coupling output surfaces (102, 202) are at least partially free of the capping layer (40). Furthermore, a method for fabricating an optoelectronic device (1) is proposed.

Description

[0001] An optoelectronic device and a method for manufacturing the optoelectronic device are proposed. The optoelectronic device is particularly configured to generate and / or detect electromagnetic radiation, preferably to generate and / or detect light perceptible to the human eye.

[0002] The purpose of this invention is to provide an optoelectronic device with a predeterminable coupling output window.

[0003] Another object of the present invention is to provide a simplified method for manufacturing optoelectronic devices having a predetermined coupling output window.

[0004] According to at least one embodiment of the optoelectronic device, the optoelectronic device includes at least one first semiconductor emitter and at least one second semiconductor emitter, each of which has an active region. The active regions are configured to generate and / or detect electromagnetic radiation and preferably include a pn junction, a double heterostructure, a single quantum well (SQW) structure, or a multi-quantum well (MQW) structure for radiation generation or detection.

[0005] Furthermore, each of the semiconductor emitters includes a front-coupled output surface. The front-coupled output surface is configured to couple at least a portion of the electromagnetic radiation generated by the active region. The front-coupled output surface is located in the direction of the main radiation direction of the active region. For example, the semiconductor emitter also includes additional coupling output surfaces oriented laterally, and especially perpendicularly, to the front-coupled output surface. Optoelectronic devices particularly have a front side and a back side opposite to the front side. The front side is the side located in the direction of the main radiation direction of the active region.

[0006] According to at least one embodiment, the optoelectronic device or the above-described embodiments thereof include a radiation-blocking capping layer. For example, the capping layer is formed of a polymer, particularly epoxy resin, into which radiation-absorbing or radiation-reflecting particles are introduced. The capping layer reduces or prevents the transmission of electromagnetic radiation by having a high absorption coefficient or a high reflectance coefficient. Thus, the coupled output of electromagnetic radiation is preferably confined to the front coupling output surface. A reflective capping layer, for example, facilitates the recycling of electromagnetic radiation, thereby particularly improving the optical efficiency of the optoelectronic device. The term radiation-blocking also includes a capping layer that strongly absorbs or reflects electromagnetic radiation, having sufficiently low transmittance to electromagnetic radiation.

[0007] According to at least one embodiment, the optoelectronic device or one of the above embodiments includes a carrier. The carrier is particularly used for the mechanical stability of the optoelectronic device. The carrier is, for example, implemented as a planar and flat plate having a main extending direction. Preferably, all semiconductor emitters on the carrier are disposed in a common plane, particularly a common surface. The carrier is preferably formed of a polymer. The carrier includes a first side. Semiconductor emitters are preferably disposed on the first side.

[0008] According to at least one embodiment of the optoelectronic device or one of the above embodiments, a first semiconductor emitter is configured to emit electromagnetic radiation in a first wavelength range through its front-coupled output surface, and the coupled output surface of the first semiconductor emitter faces away from the carrier. For example, the first semiconductor emitter is a light-emitting diode having a first wavelength range extending beyond 30 nm.

[0009] According to at least one embodiment of the optoelectronic device or one of the above embodiments, the second semiconductor emitter is configured to emit electromagnetic radiation in a second wavelength range through its front-coupled output surface, and the coupled output surface of the second semiconductor emitter faces away from the carrier. For example, the second semiconductor emitter is a light-emitting diode having a first wavelength range extending beyond 30 nm.

[0010] According to at least one embodiment of the optoelectronic device or one of the above embodiments, the first wavelength range and the second wavelength range are at least partially different from each other. The difference between the first wavelength range and the second wavelength range is, for example, that they partially overlap but have different peak wavelengths. Electromagnetic radiation from different wavelength ranges produces different color impressions in the observer. Therefore, it is advantageous to generate different color impressions by mixing electromagnetic radiation from the first wavelength range and the second wavelength range.

[0011] For example, the first wavelength range is electromagnetic radiation within the green spectrum, while the second wavelength range is electromagnetic radiation within the red wavelength range. For instance, a mixed color is produced by mixing radiation from both wavelength ranges, and this mixed color lies on a standard colorimetric table along the straight line connecting the color coordinates of the first and second wavelength ranges.

[0012] According to at least one embodiment of the optoelectronic device or one of the embodiments described above, the capping layer is formed of a photopolymer. The photopolymer is particularly a polymer compound having a photoinitiator. For example, when the photopolymer is irradiated with electromagnetic radiation of a specific wavelength, the photoinitiator induces a cross-linking reaction, thereby curing the polymer. Alternatively, when irradiated with electromagnetic radiation, the photoinitiator induces bond breaking, thereby causing the polymer to dissolve. A common application area for photopolymers is, for example, photoresists used in photolithography.

[0013] According to at least one embodiment of the optoelectronic device or one of the above embodiments, a cover layer is disposed on a first side of the carrier and has a coupling output window. The coupling output window completely penetrates the cover layer. Through the coupling output window, the coupling output surfaces are at least partially free of the cover layer. The coupling output window has, for example, a circular or elliptical shape.

[0014] According to at least one embodiment of the optoelectronic device or one of the above embodiments, the optoelectronic device includes

[0015] - At least one first semiconductor emitter and at least one second semiconductor emitter, each having an active region and a front-coupled output surface, wherein the active region is configured to generate electromagnetic radiation.

[0016] - A covering layer that does not transmit radiation, and

[0017] -Bearing components, among which,

[0018] -The semiconductor emitter is disposed on the first side of the carrier.

[0019] - A first semiconductor emitter is configured to emit electromagnetic radiation in a first wavelength range through its coupled output surface, and the coupled output surface of the first semiconductor emitter faces away from the carrier.

[0020] - The second semiconductor emitter is configured to emit electromagnetic radiation in a second wavelength range through its coupling output surface, and the coupling output surface of the second semiconductor emitter faces away from the carrier.

[0021] - The first wavelength range and the second wavelength range are at least partially different from each other, and

[0022] - The cover layer is formed of a photopolymer, disposed on the first side of the carrier, and has a coupling output window that runs through the cover layer, wherein the coupling output surfaces are at least partially free of the cover layer.

[0023] Furthermore, the optoelectronic devices described herein are based on the following considerations: when multiple semiconductor emitters are coupled into subsequent optical devices, for example, via a coupling input surface, and the diameter of the coupling input surface is smaller than the range of the coupling output surface of the semiconductor emitter along its main extension direction, the positioning of the coupling input surface of the optical device is crucial. Moreover, the positioning of the optical device affects the proportion of electromagnetic radiation coupled into the optical device by each semiconductor emitter and thus influences it through the mixing ratio of different electromagnetic radiations. Furthermore, the positioning and distance between the coupling input surface and the semiconductor emitter play a decisive role in the efficiency of coupling electromagnetic radiation into the optical device.

[0024] Furthermore, the optoelectronic device described herein utilizes the idea of ​​simplifying optical device positioning by generating a defined coupling output window at the desired location before mounting the optics. Therefore, the position of the coupling output window is determined during the manufacturing process of the optoelectronic device. This advantageously avoids the laborious position determination of the semiconductor emitter on the finished device. Moreover, it simplifies the direct mounting of the optics at the coupling output surface of the semiconductor emitter.

[0025] According to at least one embodiment of the optoelectronic device or one of the above embodiments, the coupling output surfaces of the semiconductor emitters are disposed in a common coupling output plane. The plane of the coupling output surfaces is flush with the first side of the carrier. The distance from the coupling output surface to the light guide largely determines the coupling input efficiency of the corresponding semiconductor emitter. If all coupling output surfaces are located in a common coupling output plane, the coupling input efficiency of all semiconductor emitters is approximately the same. Thus, the coupling input efficiency of each semiconductor emitter is advantageously determined primarily by the position of the light guide.

[0026] According to at least one embodiment of the optoelectronic device or one of the embodiments described above, the capping layer is configured to absorb at least a majority of the radiation emitted by the semiconductor emitter. Herein and below, "majority" corresponds to at least 70% of the emitted radiation. Therefore, the emission of the semiconductor emitter is advantageously limited only to the coupling output window.

[0027] According to at least one embodiment of the optoelectronic device or one of the embodiments described above, the capping layer is configured to reflect at least a majority of the radiation emitted by the semiconductor emitter. Reflection of electromagnetic radiation emitted by the semiconductor emitter is particularly helpful in improving the efficiency of the semiconductor emitter. The radiation reflected by the capping layer is, for example, recoupled into the semiconductor emitter and preferably re-emitted at the coupling output window.

[0028] According to at least one embodiment of the optoelectronic device or one of the above embodiments, the front coupling output surface of the semiconductor emitter has no contact structure. Preferably, the semiconductor emitter can be contacted on the back side. In other words, contact is made particularly on the back side of the semiconductor emitter opposite to the front coupling output surface. For example, the semiconductor emitter is implemented as a flip chip. In particular, a planar interconnect method is used to contact the semiconductor emitter. In the planar interconnect method, an adhesion layer formed of Ti, Cr, Ni or Pd is first applied to the contact structure of the semiconductor emitter by sputtering. Subsequently, a growth layer, for example, formed of Cu, is applied to the adhesion layer by sputtering. In a further step, a connection layer formed of Cu is preferably deposited by electroplating on the growth layer. The optoelectronic device contacted by the planar interconnect method therefore preferably includes an adhesion layer, a growth layer and a connection layer on the back side of the semiconductor emitter opposite to the front coupling output surface.

[0029] According to at least one embodiment of the optoelectronic device or one of the above embodiments, the thickness of the capping layer is at least 10 μm, preferably at least 20 μm, and particularly preferably at least 40 μm. The thickness of the capping layer herein and hereinafter corresponds to its range in the direction transverse to, and especially perpendicular to, its main extending plane.

[0030] According to at least one embodiment of the optoelectronic device or one of the above embodiments, the capping layer is configured as multiple layers and has a thickness of at least 100 μm, preferably at least 400 μm. The thickness of the capping layer can be advantageously adjusted flexibly in the multilayer structure. A greater thickness of the capping layer particularly improves the stability of the coupling output window.

[0031] According to at least one embodiment of the optoelectronic device or one of the above embodiments, a light guide having a coupling input surface is disposed in a coupling output window, and the coupling input surface of the light guide is positioned relative to the coupling output surface of the semiconductor emitter such that during operation of the semiconductor emitter, at least a portion of the electromagnetic radiation generated by the semiconductor emitter is coupled into the light guide. Preferably, the coupling input surface of the light guide is oriented parallel to the front coupling output surface of the semiconductor emitter.

[0032] The optical guide preferably comprises optical fibers containing materials selected from glass and plastics. Therefore, the optical guide also includes glass fiber cables or optical guide rods. In particular, the optical guide has a core region and a sheath region in its cross-section, wherein the core region has a first refractive index and the sheath region has a second refractive index. Preferably, the second refractive index is lower than the first refractive index. In particular, the core region is completely surrounded by the sheath region along its main extension direction. Therefore, the core region is preferably capable of transmitting electromagnetic radiation along the main extension direction of the optical guide by means of interference and reflection.

[0033] Furthermore, the optical guide has a numerical aperture (NA), which is also affected by the maximum receiving angle and the refractive index of the core and sheath regions of the optical guide. The receiving angle describes the maximum angular range within which electromagnetic radiation can be coupled into the core region of the optical guide and guided within it. For example, a larger numerical aperture allows electromagnetic radiation from a semiconductor emitter to be advantageously and easily coupled into the optical guide. Coupled electromagnetic radiation from a semiconductor emitter into the optical guide advantageously increases design freedom, allowing for, for example, the emission of electromagnetic radiation along the optical guide.

[0034] According to at least one embodiment of the optoelectronic device or one of the above embodiments, the distance between the coupling input surface of the photoconductor and the coupling output surface of the semiconductor emitter is at most 300 μm, preferably at most 100 μm, and particularly preferably at most 1 μm. A smaller distance between the coupling output surface and the coupling input surface of the photoconductor advantageously improves the coupling input efficiency of the semiconductor emitter. Furthermore, the coupling input efficiency in the photoconductor is determined by the numerical aperture of the photoconductor and the diameter of its coupling input surface.

[0035] According to at least one embodiment of the optoelectronic device or one of the above embodiments, the light guide is formed of glass fiber. Glass fiber has particularly advantageous transmission characteristics and is particularly insensitive to temperatures of several hundred degrees Celsius.

[0036] According to at least one embodiment of the optoelectronic device or one of the above embodiments, the core diameter of the light guide is 100 μm to 1000 μm, preferably 550 μm to 650 μm. Furthermore, the diameter of the core region of the light guide also determines its transmission characteristics. For example, a larger core diameter increases the size of the coupling input surface of the light guide, thereby facilitating the coupling of electromagnetic radiation into the light guide.

[0037] According to at least one embodiment of the optoelectronic device or one of the above embodiments, a protective layer for transmitting radiation is provided between the semiconductor emitter and the light guide. The protective layer for transmitting radiation is preferably formed of transparent silicone resin. The protective layer particularly protects the semiconductor emitter from any environmental influences. For example, before the light guide is installed, the protective layer protects the semiconductor emitter from moisture or dust particles.

[0038] Furthermore, a method for manufacturing optoelectronic devices is proposed. In particular, this method is used to manufacture the optoelectronic devices described herein. This means that all features disclosed for optoelectronic devices are also disclosed for this method, and vice versa.

[0039] According to at least one embodiment of the method for manufacturing optoelectronic devices, at least two semiconductor emitters are provided on a first side of a carrier, each of the at least two semiconductor emitters having an active region and a front-coupled output surface, wherein the active region is configured to generate electromagnetic radiation.

[0040] Here, a first semiconductor emitter is configured to emit electromagnetic radiation in a first wavelength range through its front-coupled output surface. A second semiconductor emitter is configured to emit electromagnetic radiation in a second wavelength range through its front-coupled output surface. The first wavelength range and the second wavelength range are at least partially different from each other.

[0041] According to at least one embodiment of the method or one of the above embodiments, the position of the coupling output surface of the semiconductor emitter on the carrier is determined. Determining the position of the coupling output surface is particularly useful for calculating the desired position of the subsequently applied coupling output window. The extent and shape of the coupling output surface are also taken into account when determining its position. Preferably, this position is determined relative to a fixed point on the carrier. For example, the fixed point is given by a corner of the carrier.

[0042] According to at least one embodiment of the method or one of the above embodiments,

[0043] The position of the coupling output window is calculated based on the position of the front coupling output surface and a predetermined coupling input ratio of the electromagnetic radiation emitted by each semiconductor emitter. The position of the coupling output window is calculated, for example, by the centroid of the surface forming the coupling output surface. For example, if a larger proportion of the radiation coupled from the first semiconductor emitter is desired, the position of the coupling output window covers a larger proportion of the coupling output surface of the first semiconductor emitter. Furthermore, the extent and shape of the coupling output window are also included in the calculation of its position. Preferably, the position of the coupling output window is determined relative to a fixed point.

[0044] According to at least one embodiment of the method or one of the above embodiments, a radiation-impermeable coating layer formed of a photopolymer is applied to a first side of the carrier. For example, the coating layer is applied to the carrier by means of centrifugal coating.

[0045] According to at least one embodiment of the method or one of the above embodiments, a coupling output window is generated at a predetermined location in the cover layer, the coupling output window completely penetrating the cover layer. The coupling output window is preferably formed by a notch. For example, the coupling output window is designed to image the cross-section of the light guide. In particular, the coupling output window is implemented as circular.

[0046] According to at least one embodiment of the method or one of the embodiments described above, after step E), a protective layer for transmitted radiation is disposed in the coupling output window. Preferably, the protective layer is formed of transparent silicone resin. The protective layer for transmitted radiation is disposed in the coupling output window, for example, by dispensing, spraying, or coating.

[0047] According to at least one embodiment of the method or one of the embodiments described above, the light guide is disposed in the coupling output window of the capping layer. Preferably, the light guide is disposed in the coupling output window such that it completely fills the coupling output window in a direction transverse to the main extension direction of the capping layer. This results in the smallest possible distance between the light guide and the semiconductor emitter. The minimal distance between the coupling input surface of the light guide and the coupling output surface of the semiconductor emitter allows electromagnetic radiation to be coupled into the light guide particularly well.

[0048] According to at least one embodiment of the method or one of the embodiments described above, the light guide is fixed to the coupling output window by means of an adhesive. In particular, the adhesive is formed of cyanoacrylate. Preferably, the light guide is connected to the cover layer by means of the adhesive.

[0049] According to at least one embodiment of the method or one of the above embodiments, determining the position of the coupling output surface of the semiconductor emitter on the carrier in step B) is performed by means of optical detection. For example, the position of the front coupling output surface of the semiconductor emitter is determined by means of camera images. For example, the camera images are evaluated by means of suitable computer-aided methods to determine the position and range of the coupling output surface. In particular, the position of the fixed point on the carrier is also detected during the optical detection process.

[0050] According to at least one embodiment of the method or one of the above embodiments, the capping layer is formed of a photopolymer and constructed by means of a laser direct imaging method. The laser direct imaging method (LDI method) enables precise exposure of the layer according to a predetermined pattern. For example, the photopolymer layer is exposed at predetermined locations according to a predetermined pattern by means of laser radiation. Advantageously, this method eliminates the need for a mask for exposing the photopolymer.

[0051] In particular, the LDI method can be used to generate, for example, circular openings for accommodating light guides at desired locations. The LDI method can realize arbitrary shapes of the coupling output window and is therefore advantageously equally applicable to, for example, elliptical or angular shapes of the coupling output window.

[0052] According to at least one embodiment of the method or one of the above embodiments, the semiconductor emitter is electrically contacted by means of a planar interconnect method. The planar interconnect method includes contact using a thin metal layer and a thin metal adhesion film. In the planar interconnect method, an adhesion layer formed of Ti, Cr, Ni, or Pd is first applied to the contact structure of the semiconductor emitter by sputtering. Subsequently, a growth layer, for example, formed of Cu, is applied to the adhesion layer by sputtering. In a further step, a connection layer formed of Cu is deposited on the growth layer, for example, by electroplating. Advantageously, contact is only made on the back side of the semiconductor emitter opposite the front coupling output surface. Therefore, the front coupling output surface has no contact structure.

[0053] According to at least one embodiment of the method or one of the above embodiments, the coupling output surface is arranged in a common coupling output plane. Preferably, the semiconductor emitter is oriented when mounted on a carrier. The planar arrangement simplifies the uniform coupling of the semiconductor emitter into subsequent optical devices (e.g., light guides).

[0054] The aforementioned optoelectronic device is particularly suitable for automotive interior lighting (e.g., lighting for car seats). Furthermore, this optoelectronic device is suitable for use as a lighting fixture woven into textiles.

[0055] Other advantages and advantageous designs and improvements of optoelectronic devices are derived from the embodiments illustrated below in conjunction with the accompanying drawings.

[0056] It shows:

[0057] Figure 1 A schematic cross-sectional view of the optoelectronic device according to the first embodiment described herein is shown.

[0058] Figure 2 and Figure 3 The table of coupled input efficiency is shown.

[0059] Figure 4A A schematic cross-sectional view of the optoelectronic device according to the second embodiment described herein is shown.

[0060] Figure 4B A schematic cross-sectional view of the optoelectronic device according to the second embodiment described herein is shown.

[0061] Figure 5A A schematic top view of the optoelectronic device according to the third embodiment described herein is shown.

[0062] Figure 5B A schematic cross-sectional view of the optoelectronic device according to the third embodiment described herein is shown, and

[0063] Figure 6 A schematic cross-sectional view of the optoelectronic device according to the fourth embodiment described herein is shown.

[0064] Identical, similar, or functionally equivalent elements are given the same reference numerals in the accompanying drawings. The scale of the drawings and the elements shown should not be considered as a scale drawing. Rather, the individual elements are exaggerated for better display and / or better understanding.

[0065] Figure 1 A schematic cross-sectional view of the optoelectronic device 1 according to a first embodiment described herein is shown, with a first semiconductor emitter 10 and a second semiconductor emitter 20 mounted on a carrier 50. The first semiconductor emitter 10 includes a first front-coupled output surface 102, and the second semiconductor emitter 20 includes a second front-coupled output surface 202. The front-coupled output surfaces 102 and 202 are oriented in a common coupling output plane.

[0066] An optical guide 70 is disposed downstream of the carrier 50 on its side facing the coupling output plane. The optical guide 70 has a coupling input surface 71 and is spaced a distance 'a' from the coupling output plane. The optical guide 70 has a cladding diameter D1 and a core diameter D2. The refractive index of the material in the core region of the optical guide 70 differs from that of the surrounding material. For example, the refractive index of the core region is higher than that of the surrounding sheath region. Electromagnetic radiation guided in the optical guide 70 primarily propagates in the core region of the optical guide. The diameter D2 of the core region of the optical guide is 600 μm.

[0067] Figure 2 A table showing the coupling input efficiency in relation to the numerical aperture NA and the distance 'a' between the optical guide 70 and the semiconductor emitter 10 is presented. The coupling input efficiency shown corresponds to the proportion of electromagnetic radiation coupled from the semiconductor emitter 10 into the optical guide 70. Based on the values ​​of the coupling input efficiency, it is clear that a larger numerical aperture NA and a smaller distance 'a' between the optical guide 70 and the semiconductor emitter 10 contribute advantageously to improving the coupling input efficiency.

[0068] At a distance of 1 μm and using a light guide 70 with a numerical aperture (NA) of 0.5, the coupling input efficiency is as high as 35.5%.

[0069] Figure 3 A table showing the coupling input efficiency related to the thickness b of the protective layer 80 is provided. The protective layer 80 is, for example, a transmissive, preferably transparent layer on the coupling output surface of the semiconductor emitter 10. The refractive index of the protective layer 80 differs from that of air, thus, undesirable reflections of electromagnetic radiation occur, particularly at the interface of the protective layer 80.

[0070] Figure 3 The figure shows the coupling input efficiency for two different optical guides 70 with different numerical apertures NA, having a fixed distance a of 100 μm and a guard layer 80 with a thickness b varying from 0 μm to 30 μm. Without the guard layer 80, a coupling input efficiency of 30.9% can be achieved at a numerical aperture of 0.5. At the same numerical aperture of 0.5, a guard layer 80 with a thickness b of 30 μm reduces the coupling input efficiency to 19.2%. Also with the guard layer 80, a reduced numerical aperture NA of 0.37 reduces the coupling input efficiency to 11.3%.

[0071] Due to total internal reflection at the interface between the protective layer 80 and air, the protective layer 80 reduces the coupling input efficiency. A larger numerical aperture NA helps to advantageously improve the coupling input efficiency. Using the thinnest possible protective layer 80 or omitting the protective layer 80 entirely helps to advantageously improve the coupling input efficiency.

[0072] Figure 4AA schematic cross-sectional view of the optoelectronic device 1 according to the second embodiment described herein is shown as a top view. The top view of the optoelectronic device 1 shows a first semiconductor emitter 10, a second semiconductor emitter 20, and a third semiconductor emitter 30. The different semiconductor emitters 10, 20, and 30 are respectively configured to emit electromagnetic radiation in different wavelength ranges.

[0073] The first semiconductor emitter 10 is configured to emit electromagnetic radiation in the red wavelength range, the second semiconductor emitter 20 is configured to emit electromagnetic radiation in the blue wavelength range, and the third semiconductor emitter 30 is configured to emit electromagnetic radiation in the green wavelength range. Semiconductor emitters 10, 20, and 30 form RGB pixels. Advantageously, this enables the display of mixed color radiation whose color coordinates lie within a triangle formed by the three different color coordinates of semiconductor emitters 10, 20, and 30 across the color space.

[0074] Semiconductor emitters 10, 20, and 30 are disposed adjacent to each other on the carrier 50. The positions of the semiconductor emitters 10, 20, and 30 and the size of their front-coupled output surfaces are determined, for example, by means of optical detection. In particular, the positions of the front-coupled output surfaces of the semiconductor emitters 10, 20, and 30 have been determined from a previous process step in which the semiconductor emitters 10, 20, and 30 were positioned on the carrier 50.

[0075] Based on the known location and size, the position of the coupling output window 60A can be calculated. The position of the coupling output window 60A affects the coupling input efficiency and coupling input ratio of the corresponding semiconductor emitters 10, 20, and 30 in the subsequent optical devices. In particular, the highest possible coupling input efficiency is achieved for all semiconductor emitters 10, 20, and 30 in the subsequent optical devices.

[0076] For example, based on a desired, predetermined mixed color, the coupling output window 60 covers a relatively large proportion of the first front coupling output surface 102 of the first semiconductor emitter 10, so as to couple the mixed color with a color coordinate offset to red into subsequent optics, for example.

[0077] Figure 4B A schematic cross-sectional view of the optoelectronic device 1 according to the second embodiment described herein is shown. As can be seen in the cross-sectional view, semiconductor emitters 10 and 20 are embedded in the carrier 50. Semiconductor emitter 10 includes a first active region 101, and semiconductor emitter 20 includes a second active region 201. The active regions 101 and 201 are configured to emit electromagnetic radiation in different wavelength ranges and include pn junctions.

[0078] A capping layer 40 is disposed on the front coupling output surfaces 102 and 103 of the semiconductor emitters 10 and 20. The capping layer 40 is formed of a radiation-impermeable material. In particular, the capping layer 40 is formed of a photopolymer. The thickness c of the capping layer 40 is 200 μm. The capping layer 40 has a multilayer structure having multiple photopolymer layers.

[0079] Figure 5A A schematic top view of the optoelectronic device 1 according to the third embodiment described herein is shown. The top view of the optoelectronic device 1 shows a first semiconductor emitter 10, a second semiconductor emitter 20, and a third semiconductor emitter 30. The different semiconductor emitters 10, 20, and 30 are respectively configured to emit electromagnetic radiation in different wavelength ranges.

[0080] Semiconductor emitters 10, 20, and 30 are at least partially covered by a capping layer 40. A coupling output window 60 is introduced into the capping layer 40. The coupling output window 60 is a cavity in the capping layer 40 that completely penetrates the capping layer 40 and at least partially exposes the front coupling output surfaces 101, 102, and 103 of the semiconductor emitters 10, 20, and 30.

[0081] The capping layer 40 is structured by LDI (laser direct imaging) exposure, thus creating a coupling output window 60. LDI enables the exposure of the photopolymer without the use of a mask. In particular, it is possible to generate any shape that can image laser radiation onto the photopolymer in this way.

[0082] A coupling output window 60 is constructed in the cover layer 40 at the pre-calculated location of the coupling output window 60A. The material of the cover layer 40 in the development area of ​​the coupling output window 60 is completely removed by a selective etching process.

[0083] Figure 5B A schematic cross-sectional view of the optoelectronic device 1 according to the third embodiment described herein is shown. In the cross-sectional view, it can be seen that a protective layer 80 for transmitting radiation is disposed on the side of the semiconductor emitters 10, 20 facing the coupling output surfaces 102, 202, 302. The protective layer 80 is disposed in the coupling output window 60. The protective layer 80 completely covers the front coupling output surfaces 102, 202, 302. The protective layer 80 for transmitting radiation has a thickness b and is formed of silicone resin. The protective layer 80 protects the semiconductor emitters 10, 20, 30 from external environmental influences, such as moisture and / or oxidation.

[0084] Figure 6 A schematic cross-sectional view of the optoelectronic device 1 according to the fourth embodiment described herein is shown. The fourth embodiment substantially corresponds to... Figure 4A and 4BThe third embodiment shown.

[0085] The light guide 70 is disposed and fixed in the coupling output window 60 by means of adhesive 90. The coupling input surface 71 is disposed at a distance a of 1 μm at the front coupling output surfaces 102, 202, 302 of the semiconductor emitters 10, 20, 30. The adhesive 90 partially penetrates into the coupling output window 60 and is preferably configured to transmit radiation. The light guide 70, together with the adhesive 90, protects the semiconductor emitters 10, 20, 30 from the external environment, so that the protective layer 60 can be advantageously omitted. Without the protective layer 80, the light guide 70 can be mounted particularly tightly with a small distance a from the coupling input surface 71 to the front coupling output surfaces 102, 202, 302 of the semiconductor emitters 10, 20, 30. Therefore, electromagnetic radiation from the semiconductor emitters 10, 20, 30 is advantageously and particularly effectively coupled into the light guide 70.

[0086] This invention is not limited to the description based on the embodiments. Rather, the invention includes each new feature and each combination of features, which in particular includes each combination of features in the patent claims, even if the feature or combination itself is not expressly given in the patent claims or embodiments.

[0087] This patent application claims priority to German patent application 102019121881.0, the disclosure of which is incorporated herein by reference.

[0088] Explanation of reference numerals in the attached figures

[0089] 1 Optoelectronic devices

[0090] 10 First Semiconductor Emitter

[0091] 20 Second Semiconductor Emitter

[0092] 30 Third Semiconductor Emitter

[0093] 101 First Active Region

[0094] 102 First front-coupled output surface

[0095] 201 Second Active Region

[0096] 202 Second front-coupled output surface

[0097] 301 Third Active Area

[0098] 302 Third front-coupled output surface

[0099] 40 Covering layer

[0100] 50 load-bearing components

[0101] 60 Coupled output window

[0102] Position of the 60a coupling output window

[0103] 70 Optical Guide

[0104] 71 Coupled Input Surface

[0105] 80 protective layers

[0106] 90 Adhesives

[0107] D1 is the diameter of the coating on the optical guide.

[0108] D2 core diameter of the optical guide

[0109] a. Distance from the optical guide to the coupled output plane

[0110] b. Thickness of the protective layer

[0111] c Thickness of the covering layer

Claims

1. An optoelectronic device (1), comprising: - At least one first semiconductor emitter (10) and at least one second semiconductor emitter (20), the first semiconductor emitter and the second semiconductor emitter having an active region (101, 201) and a front-coupled output surface (102, 202), wherein the active region is configured to generate electromagnetic radiation. - A non-transmissive coating (40), and - Bearing element (50), wherein The semiconductor emitters (10, 20) are disposed on the first side of the carrier (50). The first semiconductor emitter (10) is configured to emit electromagnetic radiation in a first wavelength range through its coupling output surface (102), and the coupling output surface (102) of the first semiconductor emitter faces away from the carrier. - The second semiconductor emitter (20) is configured to emit electromagnetic radiation in a second wavelength range through its coupling output surface (202), and the coupling output surface (202) of the second semiconductor emitter faces away from the carrier. - The first wavelength range and the second wavelength range are at least partially different from each other, and - The cover layer (40) is formed of a photopolymer and is disposed on a first side of the carrier (50), and has a coupling output window (60) that completely penetrates the cover layer (40) and in the coupling output window, the coupling output surfaces (102, 202) are at least partially without the cover layer (40).

2. The optoelectronic device (1) according to claim 1, wherein the coupling output surfaces (102, 202) of the semiconductor emitters (10, 20) are disposed in a common coupling output plane.

3. The optoelectronic device (1) according to any one of the preceding claims, wherein the cover layer (40) is configured to absorb at least a majority of the radiation emitted by the semiconductor emitter (10, 20).

4. The optoelectronic device (1) according to any one of claims 1 and 2, wherein the cover layer (40) is configured to reflect at least a majority of the radiation emitted by the semiconductor emitter (10, 20).

5. The optoelectronic device (1) according to any one of claims 1 and 2, wherein the front coupling output surface (102, 202) of the semiconductor emitter (10, 20) has no contact structure.

6. The optoelectronic device (1) according to any one of claims 1 and 2, wherein the cover layer (40) has a thickness (c) of at least 10 μm.

7. The optoelectronic device (1) according to any one of claims 1 and 2, wherein the cover layer (40) is designed to be multilayered and has a thickness (c) of at least 100 μm.

8. The optoelectronic device (1) according to any one of claims 1 and 2, wherein a light guide (70) having a coupling input surface (71) is disposed in the coupling output window (60), wherein, - The coupling input surface (71) of the light guide (70) is oriented relative to the coupling output surface (102, 202) of the semiconductor emitter (10, 20) such that during operation, at least a portion of the electromagnetic radiation emitted by the semiconductor emitter (10, 20) is coupled into the light guide (70).

9. The optoelectronic device (1) according to claim 8, wherein the distance (a) between the coupling output surface (102, 202) and the coupling input surface (71) of the light guide (70) is at most 300 μm.

10. The optoelectronic device (1) according to claim 8, wherein the light guide (70) is formed of glass fiber.

11. The optoelectronic device (1) according to claim 8, wherein the core diameter (D1) of the light guide (70) is 100 μm to 1000 μm.

12. The optoelectronic device (1) according to claim 8, wherein a protective layer (80) for transmitting radiation is disposed between the semiconductor emitter (10, 20) and the light guide (70).

13. A method for manufacturing an optoelectronic device (1), the method comprising the following steps: A) At least two semiconductor emitters (10, 20) are provided on a first side of the carrier (50), each of the at least two semiconductor emitters having an active region (101, 201) and a front-coupled output surface (102, 202), wherein the active region is configured to generate electromagnetic radiation, wherein, - The first semiconductor emitter (10) is configured to emit electromagnetic radiation in a first wavelength range through its coupled output surface (102). - The second semiconductor emitter (20) is configured to emit electromagnetic radiation in a second wavelength range through its coupled output surface (202). - The first wavelength range and the second wavelength range are at least partially different from each other. B) Determine the position of the coupling output surfaces (102, 202) of the semiconductor emitters (10, 20) on the carrier (50). C) Based on the positions of the coupling output surfaces (102, 202), the position (60A) of a coupling output window (60) is calculated according to a predetermined coupling input ratio of the electromagnetic radiation emitted by each of the semiconductor emitters (10, 20). D) Apply a radiation-impermeable covering layer (40) formed of a photopolymer to the first side of the carrier (50). E) A coupling output window (60) is generated in the cover layer (40) at a predetermined location (60A), the coupling output window completely penetrating the cover layer (40).

14. The method for manufacturing an optoelectronic device (1) according to claim 13, wherein, After step E), a protective layer (80) for transmitted radiation is placed in the coupling output window (60).

15. The method for manufacturing an optoelectronic device (1) according to any one of claims 13 and 14, wherein, The optical guide (70) is placed in the coupling output window (60).

16. The method for manufacturing an optoelectronic device (1) according to claim 15, wherein, The light guide (70) is fixed in the coupling output window (60) by means of an adhesive (90).

17. The method for manufacturing an optoelectronic device (1) according to any one of claims 13 and 14, wherein, In step B), the position of the coupling output surfaces (102, 202) of the semiconductor emitters (10, 20) on the carrier (50) is determined by means of optical detection.

18. The method for manufacturing an optoelectronic device (1) according to any one of claims 13 and 14, wherein, The covering layer (40) is formed of a photopolymer and constructed by means of a direct laser imaging method.

19. The method for manufacturing an optoelectronic device (1) according to any one of claims 13 and 14, wherein, The semiconductor emitters (10, 20) are electrically contacted by means of a planar interconnect method.

20. The method for manufacturing an optoelectronic device (1) according to any one of claims 13 and 14, wherein, The coupling output surfaces (102, 202) are arranged in a common coupling output plane.

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