Transducer probe, manufacturing method and medical device

Abstract

The present application provides a transducer probe, a manufacturing method, and a medical device. The transducer probe includes a base chip, an insulating layer, a dual piezoelectric layer, and a conductive component. The insulating layer covers the upper surface of the base chip. The dual piezoelectric layer is arranged on the upper surface of the insulating layer, including a pressure layer, an ultrasonic layer, and an isolation layer located between the pressure layer and the ultrasonic layer and capable of shielding signal interference between the ultrasonic layer and the pressure layer; the ultrasonic layer is located above the pressure layer. The conductive component includes a first conductive component for electrically connecting the base chip and the pressure layer and a second conductive component for electrically connecting the base chip and the ultrasonic layer. The present application arranges a pressure layer with pressure detection and an ultrasonic layer with ultrasonic imaging function in a transducer probe structure. The pressure signal and the ultrasonic signal are detected synchronously and independently, so that ultrasonic imaging can be performed while performing pressure detection, expanding the function of the product and broadening the application scenarios.

Description

Technical Field

[0001] The present application relates to the field of transducer technology, and in particular to a transducer probe and a medical device using the transducer probe. Background Art

[0002] A pressure transducer is an energy conversion device that senses pressure signals and converts them into electrical signals. Its core component is a pressure-sensitive element, such as a piezoelectric chip. Various pressure transducers are now widely used in industry, daily life, and medicine.

[0003] Ultrasonic transducers are energy conversion devices that convert alternating electrical signals into acoustic signals within the ultrasonic frequency range, or vice versa. Ultrasonic waves are penetrating and can penetrate surfaces. The changes in echo signals when ultrasound encounters interfaces and obstacles can be used to non-destructively detect the internal structure of an object.

[0004] In scenarios where both a pressure transducer and an ultrasonic transducer are required, the pressure transducer and ultrasonic transducer are used for separate tests. Replacing different testing equipment will inevitably take up a lot of time for instrument installation and testing. Since the core components of pressure transducers and ultrasonic transducers are both pressure-sensitive elements and are used to detect signals of different frequencies, how to provide a testing device that combines both pressure transducers and ultrasonic transducers has become a research focus in this field. Summary of the Invention

[0005] The purpose of the embodiments of the present application is to provide a transducer probe that has both pressure detection and ultrasonic imaging functions, which can expand the functions of the product and broaden the scope of application.

[0006] In a first aspect, a transducer probe is provided, comprising:

[0007] substrate chip;

[0008] an insulating layer covering the upper surface of the base chip;

[0009] a dual piezoelectric layer, disposed on the upper surface of the insulating layer, comprising a pressure layer, an ultrasonic layer, and an isolation layer located between the pressure layer and the ultrasonic layer and capable of shielding signal interference between the ultrasonic layer and the pressure layer; the ultrasonic layer is located above the pressure layer;

[0010] The conductive component includes a first conductive component for electrically connecting the base chip and the pressure layer and a second conductive component for electrically connecting the base chip and the ultrasonic layer.

[0011] In one feasible solution, the dual piezoelectric layer includes:

[0012] a first electrode layer, disposed on the upper surface of the insulating layer and having an area smaller than that of the insulating layer, comprising a first electrode body and a first rib; the first rib being electrically connected to the first electrode body and serving as a lead-out end of the first electrode body;

[0013] a pressure piezoelectric layer, disposed on the insulating layer and covering the first electrode layer, wherein a plurality of piezoelectric transducer units arranged in an array are arranged on the pressure piezoelectric layer;

[0014] an intermediate layer, which is arranged on the upper surface of the pressure piezoelectric layer and has an area smaller than that of the pressure piezoelectric layer;

[0015] an ultrasonic piezoelectric layer, disposed on and covering the intermediate layer, for generating an ultrasonic signal;

[0016] a fourth electrode layer, disposed on the upper surface of the ultrasonic piezoelectric layer and having an area smaller than that of the ultrasonic piezoelectric layer, comprising a fourth electrode body and a fourth rib; the fourth rib being electrically connected to the fourth electrode body and serving as a lead-out end of the fourth electrode body;

[0017] The intermediate layer is configured to: shield signal interference between the ultrasonic piezoelectric layer and the pressure piezoelectric layer, and constitute the pressure layer with the pressure piezoelectric layer and the first electrode layer and transmit the pressure signal generated by the pressure piezoelectric layer to the base chip; and constitute the ultrasonic layer with the ultrasonic piezoelectric layer and the fourth electrode layer and transmit the ultrasonic signal generated by the ultrasonic piezoelectric layer to the base chip.

[0018] In one feasible solution, the intermediate layer includes:

[0019] The second electrode layer includes a second electrode body and a second rib; the second rib is electrically connected to the second electrode body and serves as an extension end of the second electrode body; the second electrode layer is located directly above the first electrode layer;

[0020] The portion of the ultrasonic piezoelectric layer in contact with the second electrode layer is polarized, and the portion in contact with the pressure piezoelectric layer is not polarized.

[0021] In another feasible solution, the intermediate layer includes:

[0022] a second electrode layer, disposed on the upper surface of the piezoelectric layer and having an area smaller than that of the piezoelectric layer, comprising a second electrode body and a second rib; the second rib being electrically connected to the second electrode body and serving as an extension end of the second electrode body;

[0023] the isolation layer;

[0024] a third electrode layer, located above the isolation layer, comprising a third electrode body and a third rib, wherein the third rib is electrically connected to the third electrode body and serves as an extension end of the third electrode body; the ultrasonic piezoelectric layer is disposed on the isolation layer and covers the third electrode layer;

[0025] The first electrode layer and the second electrode layer are used to transmit the pressure signal generated by the piezoelectric transducer unit to the base chip, and the third electrode layer and the fourth electrode layer are used to transmit the ultrasonic signal generated by the ultrasonic transducer unit to the base chip.

[0026] In an implementable solution, the base chip is configured with a first contact point, a second contact point, and a fourth contact point;

[0027] The first contact point is connected to the first rib via a first conductive post; the second contact point is connected to the second rib via a second conductive post; the fourth contact point is connected to the fourth rib via a fourth conductive post;

[0028] The first conductive pillar, the second conductive pillar, and the fourth conductive pillar are all arranged through the dual piezoelectric layer and avoid the first electrode layer, the second electrode layer, and the fourth electrode layer;

[0029] The first contact point, the first conductive column, the second contact point and the second conductive column constitute the first conductive component; the second contact point, the second conductive column, the fourth contact point and the fourth conductive column constitute the second conductive component.

[0030] In one implementable solution, the cross-sectional area of ​​the first conductive column is smaller than that of the first rib; the cross-sectional area of ​​the second conductive column is smaller than that of the second rib; and the cross-sectional area of ​​the fourth conductive column is smaller than that of the third rib.

[0031] In an implementable solution, an excitation layer is etched on the first electrode layer, the fourth electrode layer, the second electrode layer in the middle layer, or the second electrode layer in the middle layer, and the third electrode layer.

[0032] In an implementable solution, the transducer probe further includes a protective layer, which is disposed above the ultrasonic piezoelectric layer and covers the fourth electrode layer;

[0033] In one feasible solution, the thickness of the ultrasonic piezoelectric layer is different from the thickness of the pressure piezoelectric layer.

[0034] According to a second aspect of the present application, a medical device is further provided, comprising a transducer probe having the structure as described in any one of the above items.

[0035] According to a third aspect of the present application, a method for manufacturing a transducer probe is also provided, comprising:

[0036] Forming a substrate chip based on a CMOS process;

[0037] forming an insulating layer on a surface of the base chip;

[0038] A pressure layer, an isolation layer, and an ultrasonic layer are sequentially deposited on the surface of the insulating layer from bottom to top; the isolation layer is used to shield signal interference between the ultrasonic layer and the pressure layer; the pressure layer, the isolation layer, and the ultrasonic layer constitute a dual piezoelectric layer;

[0039] A first conductive component electrically connecting the base chip and the pressure layer is provided between the base chip and the pressure layer, and a second conductive component electrically connecting the base chip and the ultrasound layer is provided between the base chip and the ultrasound layer; the first conductive component and the second conductive component constitute the conductive component of the transducer probe.

[0040] In one embodiment, the process for fabricating the dual piezoelectric layer includes:

[0041] Manufacturing the piezoelectric layer: depositing a layer of metal material on the surface of the insulating layer as the first electrode layer; depositing a pressure piezoelectric layer on the insulating layer and the first electrode layer; and depositing a layer of metal material on the pressure piezoelectric layer as the second electrode layer;

[0042] Making the isolation layer: depositing an isolation layer on the second electrode layer, wherein the thickness of the isolation layer is an odd multiple of a quarter of the ultrasonic wavelength;

[0043] The ultrasonic layer is produced by depositing a layer of metal material on the isolation layer as a third electrode layer; coating the ultrasonic piezoelectric layer above the third electrode layer; polarizing the portion of the ultrasonic piezoelectric layer in contact with the third electrode layer, and not polarizing the portion not in contact with the third electrode layer; and depositing a layer of metal material on the ultrasonic piezoelectric layer as a fourth electrode layer.

[0044] In another embodiment, the process for making the dual piezoelectric layer includes:

[0045] depositing a layer of metal material on the surface of the insulating layer as the first electrode layer;

[0046] depositing a piezoelectric layer on the insulating layer and the first electrode layer;

[0047] Depositing a layer of metal material on the pressure piezoelectric layer as a second electrode layer, wherein the second electrode layer is located directly above the first electrode layer;

[0048] Coating an ultrasonic piezoelectric layer on the second electrode layer; polarizing the portion of the ultrasonic piezoelectric layer in contact with the second electrode layer, and not polarizing the portion not in contact with the second electrode layer;

[0049] A layer of metal material is deposited on the ultrasonic piezoelectric layer as a fourth electrode layer.

[0050] In one embodiment, the method of electrically connecting the conductive component to the base chip and the pressure layer, and electrically connecting the base chip and the ultrasonic layer includes:

[0051] providing first to fourth contact points on the base chip;

[0052] The first electrode layer includes a first electrode body and a first rib that are separated by a predetermined distance and electrically connected; the second electrode layer includes a second electrode body and a second rib that are separated by a predetermined distance and electrically connected; the third electrode layer includes a third electrode body and a third rib that are separated by a predetermined distance and electrically connected; the fourth electrode layer includes a fourth electrode body and a fourth rib that are separated by a predetermined distance and electrically connected; the first rib, the second rib, the third rib and the fourth rib are staggered.

[0053] A first through hole, a second through hole, a third through hole, and a fourth through hole are formed in an area where the first rib and the first contact point are opposite, an area where the second rib and the second contact point are opposite, an area where the third rib and the third contact point are opposite, and an area where the fourth rib and the fourth contact point are opposite;

[0054] The first through hole passes through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first rib, and the insulating layer, and allows the first contact point to leak out; the second through hole passes through the isolation layer, the second rib, the pressure piezoelectric layer, and the insulating layer, and allows the second contact point to leak out; the third through hole passes through the ultrasonic piezoelectric layer, the third rib, the pressure layer, and the insulating layer, and allows the third contact point to leak out; the fourth through hole passes through the fourth rib, the ultrasonic piezoelectric layer, the fourth rib, the pressure piezoelectric layer, and the insulating layer, and allows the fourth contact point to leak out;

[0055] depositing a conductive medium inside and above the first through hole, the second through hole, the third through hole, and the fourth through hole to form a first conductive pillar, a second conductive pillar, a third conductive pillar, and a fourth conductive pillar;

[0056] The first conductive pillar and the second conductive pillar are used to electrically connect the base chip and the pressure piezoelectric layer; the third conductive pillar and the fourth conductive pillar are used to electrically connect the base chip and the ultrasonic piezoelectric layer.

[0057] In one embodiment, the method of electrically connecting the conductive component to the base chip and the pressure layer, and electrically connecting the base chip and the ultrasonic layer includes:

[0058] Disposing a first contact point, a second contact point, and a fourth contact point on the base chip;

[0059] The first electrode layer includes a first electrode body and a first rib that are separated by a predetermined distance and electrically connected; the second electrode layer includes a second electrode body and a second rib that are separated by a predetermined distance and electrically connected; the fourth electrode layer includes a fourth electrode body and a fourth rib that are separated by a predetermined distance and electrically connected; the first rib, the second rib, and the fourth rib are staggered.

[0060] A first through hole, a second through hole, and a fourth through hole are formed in an area where the first rib and the first contact point are opposite, an area where the second rib and the second contact point are opposite, and an area where the fourth rib and the fourth contact point are opposite;

[0061] The first through hole passes through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first rib, and the insulating layer, and allows the first contact point to leak out; the second through hole passes through the ultrasonic piezoelectric layer, the second rib, the pressure piezoelectric layer, and the insulating layer, and allows the second contact point to leak out; the fourth through hole passes through the fourth rib, the ultrasonic piezoelectric layer, the second rib, the pressure piezoelectric layer, and the insulating layer, and allows the fourth contact point to leak out;

[0062] A conductive medium is deposited inside and over the first through-hole, the second through-hole, and the fourth through-hole to form a first conductive pillar, a second conductive pillar, and a fourth conductive pillar.

[0063] In a further embodiment, the method for manufacturing the transducer probe further comprises:

[0064] A protective layer is deposited on the ultrasonic layer; the protective layer covers the ultrasonic piezoelectric layer, the fourth electrode layer and the top of each conductive column.

[0065] It can be seen from the above technical solution that this application sets the pressure layer with pressure detection and the ultrasonic layer with ultrasonic imaging function in a transducer probe structure. The pressure signal and the ultrasonic signal are detected synchronously and independently, and ultrasonic imaging can be performed while performing pressure detection, thereby expanding the function of the product and broadening the application scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0066] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0067] Figure 1 1 is a schematic structural diagram of a transducer probe according to an embodiment of the present application;

[0068] Figure 2 Schematic diagram of the structure of another transducer probe according to an embodiment of the present application;

[0069] Figure 3 for Figure 2 a cross-sectional view of the transducer probe shown;

[0070] Figures 4 to 13 To implement Figure 2 Schematic diagram of the structure of each step from the first step to the tenth step of the transducer probe. DETAILED DESCRIPTION

[0071] To make the objectives, technical solutions, and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Generally, the components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0072] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for protection, but merely represents selected embodiments of the present application. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments in the present application without creative work are within the scope of protection of the present application.

[0073] Figure 1 FIG1 is a schematic diagram of the structure of a transducer probe according to an embodiment of the present application. Figure 1 The transducer probe includes a substrate chip 100, an insulating layer 200, a dual piezoelectric layer 300 and a conductive component.

[0074] The insulating layer 200 covers the top surface of the substrate chip 100. The dual piezoelectric layer 300 is disposed on the top surface of the insulating layer 200. The dual piezoelectric layer 300 includes a pressure layer 310, an ultrasonic layer 320, and an isolation layer 330 located between the pressure layer 310 and the ultrasonic layer 320. The ultrasonic layer 320 is located above the pressure layer 310. The pressure layer 310 is used for pressure detection, and the ultrasonic layer 320 is used for ultrasonic imaging. The isolation layer 330 is used to shield the ultrasonic layer 320 from signal interference between the pressure layer 310 and the pressure layer 310, ensuring that both layers can function properly. The conductive component includes a first conductive component for electrically connecting the substrate chip 100 to the pressure layer 310 and a second conductive component for electrically connecting the substrate chip 100 to the ultrasonic layer 320.

[0075] Since the core components of the pressure transducer and the ultrasonic transducer are both pressure-sensitive elements and are used to detect signals of different frequencies, in the above implementation process of the present application, the pressure layer 310 with pressure detection and the ultrasonic layer 320 with ultrasonic imaging function are arranged in a transducer probe structure, and the pressure signal and the ultrasonic signal are detected synchronously and independently, so that the transducer probe in the present application can perform ultrasonic imaging while performing pressure detection, thereby expanding the function of the product and broadening the application scenarios.

[0076] In one embodiment, the pressure layer 310 includes a first electrode layer 311, a pressure piezoelectric layer 312, and a second electrode layer 313. The first electrode layer 311 is disposed on the upper surface of the insulating layer 200 and has an area smaller than that of the insulating layer 200. It includes a first electrode body and a first rib 314. The first rib 314 is electrically connected to the first electrode body and serves as a lead-out terminal of the first electrode body. The pressure piezoelectric layer 312 is disposed on the insulating layer 200 and covers the first electrode layer 311. A plurality of arrayed piezoelectric transducer units (not shown in the figure) are arranged on the pressure piezoelectric layer 312. The second electrode layer 313 is disposed on the upper surface of the pressure piezoelectric layer 312 and has an area smaller than that of the pressure piezoelectric layer 312. It includes a second electrode body and a second rib 315. The second rib 315 is electrically connected to the second electrode body and serves as a lead-out terminal of the second electrode body. When the pressure piezoelectric layer 312 receives pressure, the first electrode layer 311 and the second electrode layer 313 are used to transmit the pressure signal generated by the piezoelectric transducer unit to the base chip 100 .

[0077] The ultrasonic layer 320 includes a third electrode layer 321, an ultrasonic piezoelectric layer 322, and a fourth electrode layer 323. The third electrode layer 321 is located above the isolation layer 330 and includes a third electrode body and third ribs 324. The third ribs 324 are electrically connected to the third electrode body and serve as lead terminals of the third electrode body. The ultrasonic piezoelectric layer 322 is disposed on the isolation layer 330 and covers the third electrode layer 321. The fourth electrode layer 323 is disposed on the upper surface of the ultrasonic piezoelectric layer 322 and has a smaller area than the ultrasonic piezoelectric layer 322. It includes a fourth electrode body and fourth ribs 325. The fourth ribs 325 are electrically connected to the fourth electrode body and serve as lead terminals of the fourth electrode body. When the ultrasonic piezoelectric layer 322 is subjected to pressure, the third and fourth electrode layers 321 and 323 are used to transmit the ultrasonic signal generated by the ultrasonic transducer unit to the substrate chip 100.

[0078] In this embodiment, the second electrode layer 313, the isolation layer 330, and the third electrode layer 321 constitute an intermediate layer.

[0079] In another feasible solution, the middle layer only includes the second electrode layer. The role played by the second electrode layer in this embodiment is the same as that of the second electrode layer 313, the isolation layer 330 and the third electrode layer 321 in the previous embodiment. Figure 2 Schematic diagram of the structure of another transducer probe according to an embodiment of the present application. Figure 3 for Figure 2 Cross-section of the transducer probe shown. Figure 2 and Figure 3 The second electrode layer 313 is located directly above the first electrode layer 311 , and the portion of the ultrasonic piezoelectric layer 322 that contacts the second electrode layer 313 is polarized, while the portion that contacts the pressure piezoelectric layer 312 is not polarized.

[0080] In one embodiment, a first contact point 110, a second contact point 120 (coinciding with a third contact point 130), and a fourth contact point 140 are configured on the substrate chip 100. The first contact point 110 is connected to the first support rib 314 via a first conductive pillar 500; the second contact point 120 is connected to the second support rib 315 via a second conductive pillar 600 (coinciding with a third conductive pillar 700); and the fourth contact point 140 is connected to the fourth support rib 325 via a fourth conductive pillar 800. The first conductive pillar 500, the second conductive pillar 600, and the fourth conductive pillar 800 all penetrate the dual piezoelectric layer 300 and avoid the first electrode layer 311, the second electrode layer 313, and the fourth electrode layer 323. The first contact point 110, the first conductive pillar 500, the second contact point 120, and the second conductive pillar 600 constitute a first conductive component; the second contact point 120, the second conductive pillar 600, the fourth contact point 140, and the fourth conductive pillar 800 constitute a second conductive component.

[0081] In one feasible solution, the cross-sectional area of ​​the first conductive column 500 is smaller than that of the first rib 314 ; the cross-sectional area of ​​the second conductive column 600 is smaller than that of the second rib 315 ; and the cross-sectional area of ​​the fourth conductive column 800 is smaller than that of the fourth rib 325 .

[0082] In an implementable solution, an excitation layer is etched on the first electrode layer 311 , the second electrode layer 313 , the third electrode layer 321 and the fourth electrode layer 323 .

[0083] In an implementable solution, the transducer probe further includes a protective layer 400 , which is disposed above the ultrasonic piezoelectric layer 322 and covers the fourth electrode layer 323 .

[0084] In the solution implemented in the present application, the thickness of the ultrasonic piezoelectric layer 322 and the thickness of the pressure piezoelectric layer 312 may be the same or different.

[0085] According to one aspect of the present application, a method for manufacturing a transducer probe is also provided, comprising:

[0086] Forming a substrate chip based on a CMOS process;

[0087] forming an insulating layer on a surface of the base chip;

[0088] A pressure layer, an isolation layer, and an ultrasonic layer are sequentially deposited on the surface of the insulating layer from bottom to top; the isolation layer is used to shield signal interference between the ultrasonic layer and the pressure layer; the pressure layer, the isolation layer, and the ultrasonic layer constitute a dual piezoelectric layer;

[0089] A first conductive component electrically connecting the substrate chip and the pressure layer is provided between the substrate chip and the pressure layer, and a second conductive component electrically connecting the substrate chip and the ultrasound layer is provided between the substrate chip and the ultrasound layer; the first conductive component and the second conductive component constitute the conductive component of the transducer probe.

[0090] Specifically, the following provides Figure 1 The manufacturing process of the transducer probe structure shown includes:

[0091] 1) A signal processor substrate chip 100 is formed using a CMOS (Complementary Metal Oxide Semiconductor) process. The substrate chip 100 is based on a silicon wafer, glass, or other substrate material. The substrate chip 100 has four contact points: a first contact point 110, a second contact point 120, a third contact point 130, and a fourth contact point 140. These can be considered the four I / O ports of the CMOS chip.

[0092] 2) An insulating layer 200 is formed on the surface of the base chip 100. The insulating layer 200 can be made of silicon dioxide or other various insulating materials in the art. In this embodiment, the insulating layer 200 is made of polyimide (PI).

[0093] 3) After completing step 2), a layer of metal material is deposited on the surface of the insulating layer 200 as the first electrode layer 311, and a patterning process is performed to etch the first electrode layer 311 of the excitation layer. The first electrode layer 311 includes a first electrode body and a first rib 314. The first rib 314 can be regarded as the lead-out end of the first electrode layer 311. The first electrode body is connected to one end of the first rib 314. The first rib 314 is used to electrically connect to the first contact point 110 in the substrate chip 100. In the embodiment of the present application, the material of the first electrode layer 311 can be a conductive material such as metal, metal silicide, metal nitride, metal oxide or conductive carbon. For example, the material of the first electrode layer 311 can be Mo, Al, Cu, Ag, Au, Ni, Co, TiAl, TiN or TaN. In addition, the selection of the metal materials mentioned below can refer to the description in this section and will not be repeated here.

[0094] 4) After completing step 3), a pressure piezoelectric layer 312 is deposited on the insulating layer 200 and the first electrode layer 311. The piezoelectric layer can be formed by physical vapor deposition, chemical vapor deposition, screen printing, etc. The piezoelectric material can be a piezoelectric crystal, piezoelectric ceramic or piezoelectric polymer. At the same time, a plurality of arrayed piezoelectric transducer units are made, and the piezoelectric layer between the plurality of piezoelectric transducer units can be continuous. The piezoelectric material used in this embodiment is lead zirconate titanate (PZT).

[0095] 5) After completing step 4), refer to step 3) and deposit a layer of metal material as an electrode on the pressure piezoelectric layer 312, and perform a patterning process to obtain a second electrode layer 313. The second electrode layer 313 includes a second electrode body and a second rib 315. The second electrode body serves as the upper electrode of the pressure piezoelectric layer 312. The second rib 315 can be regarded as the lead end of the second electrode layer 313. The second electrode body is connected to one end of the second rib 315. The second rib 315 is used to electrically connect to the second contact point 120 in the substrate chip 100. When used for pressure detection, the first electrode layer 311 and the second electrode layer 313 can be electrically connected to the first contact point 110 and the second contact point 120 of the substrate chip 100 respectively, so as to receive the pressure signal and transmit the pressure signal to the substrate chip 100.

[0096] 6) After completing step 5), an isolation layer is deposited on the second electrode layer 313. The isolation layer is made of metal, ceramic, or other high-impedance materials, or low-impedance materials such as air. The isolation layer serves as a signal isolation layer 330. The ultrasonic layer 320 is located above the pressure layer 310. In the propagation path of the ultrasonic wave, when the acoustic impedance between the membrane layers is mismatched and the thickness of the isolation layer is an odd multiple of one-quarter of the ultrasonic wavelength, the ultrasonic wave is almost completely reflected at the interface of the isolation layer. Therefore, the ultrasonic wave transmitted from the ultrasonic piezoelectric layer 322 is almost completely reflected at the interface of the isolation layer and will not propagate downward to the pressure layer 310, thereby preventing the pressure piezoelectric layer 312 from being interfered with by the ultrasonic wave when detecting the pressure signal.

[0097] 7) After completing step 6), a layer of metal material is deposited on the isolation layer as an electrode and patterned to obtain a third electrode layer 321. The third electrode layer 321 includes a third electrode body and a third rib 324. The third electrode body serves as the lower electrode of the ultrasonic layer 320. The third rib 324 can be considered as an extension end of the third electrode layer 321. The third electrode body is connected to one end of the third rib 324. The third rib 324 is used to electrically connect to the third contact point 130 in the substrate chip 100.

[0098] 8) After completing 7), an ultrasonic piezoelectric layer 322 is coated on top of the third electrode layer 321. The material and thickness of the ultrasonic piezoelectric layer 322 can be the same as or different from those of the pressure piezoelectric layer 312. In this embodiment, the piezoelectric material is vinylidene fluoride-trifluoroethylene copolymer (PVDF-Tri). After coating the ultrasonic piezoelectric layer 322, in-situ polarization is performed. The portion with the electrode below is polarized, while the portion without the electrode below is not polarized. The polarized ultrasonic piezoelectric layer 322 has piezoelectric properties, while the remaining unpolarized piezoelectric layer area has no piezoelectric properties.

[0099] 9) After completing step 8), a layer of metal material is deposited as an electrode layer, and a patterning process is performed to etch out the fourth electrode layer 323 of the excitation layer. The fourth electrode layer 323 includes a fourth electrode body and a fourth rib 325. The fourth electrode body serves as the upper electrode of the ultrasonic layer 320. The fourth rib 325 can be considered as the lead end of the fourth electrode layer 323. The fourth electrode body is connected to one end of the fourth rib 325. The fourth rib 325 is used to electrically connect to the fourth contact point 140 in the substrate chip 100.

[0100] 10) After completing 9), an etching process is performed to form a first through hole, a second through hole, a third through hole, and a fourth through hole in the area where the first support rib 314 and the first contact point 110 are opposite, the area where the second support rib 315 and the second contact point 120 are opposite, the area where the third support rib 324 and the third contact point 130 are opposite, and the area where the fourth support rib 325 and the fourth contact point 140 are opposite. The first through hole passes through the ultrasonic piezoelectric layer 322, the pressure piezoelectric layer 312, the first support rib 314, and the insulating layer 200, revealing the corresponding first contact point 110 of the substrate chip 100. The second through hole passes through the isolation layer, the second support rib 315, the pressure piezoelectric layer 312, and the insulating layer 200, revealing the corresponding second contact point 120 of the substrate chip 100. The third through hole passes through the ultrasonic piezoelectric layer 322, the third support rib 324, the pressure layer 310, and the insulating layer 200, revealing the corresponding third contact point 130 of the substrate chip 100. The fourth through hole passes through the fourth support rib 325, the ultrasonic piezoelectric layer 322, the fourth support rib 325, the pressure piezoelectric layer 312, and the insulating layer 200, revealing the corresponding fourth contact point 140 of the substrate chip 100. In this embodiment, through control of the through hole manufacturing process, the first through hole preferably reveals at least a portion of the upper surface of the first support rib 314 to increase the subsequent contact area between the first support rib 314 and the conductive medium. Similarly, the second, third, and fourth through holes all reveal at least a portion of the upper surface of the corresponding support rib to increase the subsequent contact area with the conductive medium.

[0101] 11) After completing 10), a conductive medium is deposited inside and above the first through-hole, the second through-hole, the third through-hole, and the fourth through-hole, so that the conductive medium completely fills the first through-hole, the second through-hole, the third through-hole, and the fourth through-hole. In this embodiment, the conductive medium is aluminum, formed by physical vapor deposition. The conductive medium can also be other conductive materials. After the conductive medium is deposited, a patterning process is performed to remove the conductive medium outside the first through-hole, the second through-hole, the third through-hole, and the fourth through-hole. The first through-hole is filled with the first conductive pillar 500, the second through-hole is filled with the second conductive pillar 600, the third through-hole is filled with the third conductive pillar 700, and the fourth through-hole is filled with the fourth conductive pillar 800. The first conductive pillar 500 is in electrical contact with the first contact point 110 and the first rib 314 of the substrate chip 100, respectively, thereby electrically connecting the first contact point 110 of the substrate chip 100 to the first electrode layer 311. The second conductive pillar 600 is in electrical contact with the second contact point 120 and the second rib 315 of the substrate chip 100, respectively, thereby electrically connecting the second contact point 120 of the substrate chip 100 to the second electrode layer 313. The third conductive pillar 700 is in electrical contact with the third contact point 130 and the third rib 324 of the substrate chip 100, respectively, thereby electrically connecting the third contact point 130 of the substrate chip 100 to the third electrode layer 321. The fourth conductive pillar 800 is in electrical contact with the fourth contact point 140 and the fourth rib 325 of the substrate chip 100, respectively, thereby electrically connecting the fourth contact point 140 of the substrate chip 100 to the fourth electrode layer 323. The first and second conductive pillars 500 and 600 provide electrical connection between the circuit unit of the substrate chip 100 and the pressure piezoelectric layer 312 above it, thereby achieving electrical connection between the signal processor substrate and the pressure transducer. The third and fourth conductive pillars 700 and 800 provide electrical connection between the circuit unit of the substrate chip 100 and the ultrasonic piezoelectric layer 322, thereby achieving electrical connection between the signal processor substrate and the ultrasonic transducer.

[0102] 12) After completing 11), a protective layer 400 is deposited on the chip. The protective layer 400 covers the ultrasonic piezoelectric layer 322, the fourth electrode layer 323, the first conductive pillar 500, the second conductive pillar 600, and the third conductive pillar 700. The protective layer 400 can be deposited using a deposition process known in the art. On the one hand, the protective layer 400 can provide a sealing and insulating protection for the piezoelectric layer. On the other hand, the protective layer 400 can also serve as a matching layer for the ultrasonic transducer pixel structure. Thus, the first electrode layer 311, the second electrode layer 313, the third electrode layer 321, the fourth electrode layer 323, the pressure piezoelectric layer 312, the ultrasonic piezoelectric layer 322, and the protective layer 400 cooperate to form a pressure and ultrasonic dual piezoelectric layer 300 transducer pixel structure corresponding to the circuit unit of the substrate chip 100. Optimizing the thickness and planar dimensions of the above layers can achieve an ideal resonant frequency and higher sensitivity. In this embodiment, the material of the protective layer 400 is silicone rubber, but it can also be other insulating materials or combinations in the art.

[0103] The following provides Figure 2 The manufacturing process of the transducer probe structure shown in FIG. Figure 2 The production process of the transducer probe structure shown is similar to Figure 1 The manufacturing process of the transducer probe structure shown is partially the same, the difference lies in the number of contact points and the number of electrode layers, as follows:

[0104] 1) A signal processor substrate chip 100 is formed based on a CMOS (Complementary Metal Oxide Semiconductor) process. The substrate chip 100 is based on a silicon wafer, glass, or other substrate. The substrate chip 100 has three contact points, namely a first contact point 110, a second contact point 120, and a fourth contact point 140, which can be regarded as the three I / O ports of the CMOS chip. Figure 3 .

[0105] 2) Form an insulating layer 200 on the surface of the base chip 100, see Figure 4 The insulating layer 200 may be made of silicon dioxide or other insulating materials in the art. In this embodiment, the insulating layer 200 is made of polyimide (PI).

[0106] 3) After completing step 2), a layer of metal material is deposited on the surface of the insulating layer 200 as the first electrode layer 311, and a patterning process is performed to etch out the first electrode layer 311 of the excitation layer. Figure 6The first electrode layer 311 includes a first electrode body and a first rib 314. The first rib 314 can be regarded as the lead-out end of the first electrode layer 311. The first electrode body is connected to one end of the first rib 314. The first rib 314 is used to electrically connect to the first contact point 110 in the substrate chip 100. In the embodiment of the present application, the material of the first electrode layer 311 can be a conductive material such as metal, metal silicide, metal nitride, metal oxide or conductive carbon. For example, the material of the first electrode layer 311 can be Mo, Al, Cu, Ag, Au, Ni, Co, TiAl, TiN or TaN. In addition, the selection of the metal materials mentioned below can refer to the description in this section and will not be repeated here.

[0107] 4) After completing step 3), a pressure piezoelectric layer 312 is deposited on the insulating layer 200 and the first electrode layer 311, see Figure 7 The piezoelectric layer can be formed by physical vapor deposition, chemical vapor deposition, screen printing, or other methods. The piezoelectric material can be a piezoelectric crystal, piezoelectric ceramic, or piezoelectric polymer. When multiple piezoelectric transducer units are arranged in an array, the piezoelectric layer between the multiple piezoelectric transducer units can be continuous. The piezoelectric material used in this embodiment is lead zirconate titanate (PZT).

[0108] 5) After completing step 4), referring to step 3), a layer of metal material is deposited on the pressure piezoelectric layer 312 as an electrode, and patterned to obtain a second electrode layer 313, see Figure 8 The second electrode layer 313 includes a second electrode body and a second rib 315. The second electrode body serves as the upper electrode of the piezoelectric layer 312. The second rib 315 can be considered an extension end of the second electrode layer 313. The second electrode body is connected to one end of the second rib 315. The second rib 315 is used to electrically connect to the second contact point 120 in the substrate chip 100. When used for pressure detection, the first electrode layer 311 and the second electrode layer 313 can be electrically connected to the first contact point 110 and the second contact point 120 of the substrate chip 100, respectively, to receive and transmit pressure signals to the substrate chip 100. In this embodiment, the second electrode layer 313 combines the functions of the second electrode layer 313, the isolation layer and the third electrode layer 321 in the previous embodiment, that is, in addition to serving as the upper electrode of the pressure piezoelectric layer 312, it can also serve as the lower electrode of the ultrasonic piezoelectric layer 322 described below, and act as a signal isolation layer 330. In the propagation path of the ultrasonic wave, when the acoustic impedance between the membrane layers is mismatched and the thickness of the isolation layer is an odd multiple of one-quarter of the ultrasonic wavelength, the ultrasonic wave is almost completely reflected at the interface of the isolation layer. Therefore, the ultrasonic wave transmitted from the ultrasonic piezoelectric layer 322 is almost completely reflected at the interface of the second electrode layer 313 and will not propagate downward to the pressure piezoelectric layer 312, thereby avoiding interference from the ultrasonic wave when the pressure piezoelectric layer 312 detects the pressure signal.

[0109] 6) After completing step 5), an ultrasonic piezoelectric layer 322 is coated on top of the second electrode layer 313, as shown in FIG9 . The material and thickness of the ultrasonic piezoelectric layer 322 can be the same as or different from those of the pressure piezoelectric layer 312. In this embodiment, the piezoelectric material is vinylidene fluoride-trifluoroethylene copolymer (PVDF-Tri). After coating the ultrasonic piezoelectric layer 322, in-situ polarization is performed. The portion with the electrode below is polarized, while the portion without the electrode below is not polarized. The polarized ultrasonic piezoelectric layer 322 has piezoelectric properties, while the remaining unpolarized piezoelectric layer area does not have piezoelectric properties.

[0110] 7) After completing step 6), a layer of metal material is deposited as an electrode layer according to step 3), and a patterning process is performed to etch out the fourth electrode layer 323 of the excitation layer. Figure 10 The fourth electrode layer 323 includes a fourth electrode body and a fourth rib 325. The fourth electrode body is used as the upper electrode of the ultrasonic layer 320. The fourth rib 325 can be regarded as the lead-out end of the fourth electrode layer 323. The fourth electrode body is connected to one end of the fourth rib 325. The fourth rib 325 is used to electrically connect to the fourth contact point 140 in the substrate chip 100.

[0111] 8) After completing step 7), an etching process is performed to form a first through hole 340, a second through hole 350, and a fourth through hole 360 ​​in the area where the first support rib 314 and the first contact point 110 are opposite, the area where the second support rib 315 and the second contact point 120 are opposite, and the area where the fourth support rib 325 and the fourth contact point 140 are opposite. Figure 11 The first through hole 340 passes through the ultrasonic piezoelectric layer 322, the pressure piezoelectric layer 312, the first rib 314, and the insulating layer 200, revealing the first contact point 110 of the corresponding substrate chip 100. The second through hole 350 passes through the ultrasonic piezoelectric layer 322, the second rib 315, the pressure piezoelectric layer 312, and the insulating layer 200, revealing the second contact point 120 of the corresponding substrate chip 100. The fourth through hole 360 ​​passes through the fourth rib 325, the ultrasonic piezoelectric layer 322, the second rib 315, the pressure piezoelectric layer 312, and the insulating layer 200, revealing the fourth contact point 140 of the corresponding substrate chip 100. In this embodiment, by controlling the through hole manufacturing process, the first through hole 340 preferably reveals at least a portion of the upper surface of the first rib 314, so as to increase the subsequent contact area between the first rib 314 and the conductive medium. Likewise, the second through hole 350 and the fourth through hole 360 ​​expose at least a portion of the upper surface of the corresponding rib, so as to increase the subsequent contact area with the conductive medium.

[0112] 9) After completing step 8), a conductive medium is deposited inside and above the first through hole 340, the second through hole 350 and the fourth through hole 360. The conductive medium fills the first through hole 340, the second through hole 350 and the fourth through hole 360. The upper surface of the conductive medium in each through hole is higher than the upper surface of the piezoelectric layer outside the hole. In this embodiment, the conductive medium is aluminum, which is formed by physical vapor deposition. The conductive medium can also be other conductive materials. After the conductive medium is deposited, a graphic process is performed to remove part of the conductive medium outside the first through hole 340, the second through hole 350 and the fourth through hole 360. The first conductive column 500 fills the first through hole 340, and the second conductive column 600 fills the second through hole 350 (equivalent to Figure 1 The second conductive column 600 and the third conductive column 700 in FIG, the fourth through hole 360 ​​is filled with the fourth conductive column 800, see Figure 12 The first conductive pillar 500 electrically contacts the first contact point 110 and the first rib 314 of the substrate chip 100, respectively, thereby electrically connecting the first contact point 110 of the substrate chip 100 to the first electrode layer 311. The second conductive pillar 600 electrically contacts the second contact point 120 and the second rib 315 of the substrate chip 100, respectively, thereby electrically connecting the second contact point 120 of the substrate chip 100 to the second electrode layer 313. The fourth conductive pillar 800 electrically contacts the fourth contact point 140 and the fourth rib 325 of the substrate chip 100, respectively, thereby electrically connecting the fourth contact point 140 of the substrate chip 100 to the second electrode layer 313. The first conductive pillar 500 and the second conductive pillar 600 achieve electrical connection between the circuit unit of the substrate chip 100 and the upper piezoelectric layer 312, thereby achieving electrical connection between the signal processor substrate and the pressure transducer. By using the second conductive pillars 600 and the fourth conductive pillars 800 , electrical connection between the circuit unit of the substrate chip 100 and the ultrasonic piezoelectric layer 322 is achieved, that is, electrical connection between the signal processor substrate and the ultrasonic transducer is achieved.

[0113] 10) After completing step 9), a protective layer 400 is deposited on the ultrasonic layer, see Figure 13The protective layer 400 covers the ultrasonic piezoelectric layer 322, the fourth electrode layer 323, the first conductive pillar 500, the second conductive pillar 600, and the fourth conductive pillar 800. The protective layer 400 can be deposited using deposition processes known in the art. The protective layer 400 not only provides sealing and insulation protection for the piezoelectric layer, but also serves as a matching layer for the ultrasonic transducer pixel structure. Thus, the first electrode layer 311, the second electrode layer 313, the fourth electrode layer 323, the pressure piezoelectric layer 312, the ultrasonic piezoelectric layer 322, and the protective layer 400 cooperate to form a pressure and ultrasonic dual piezoelectric layer 300 transducer pixel structure corresponding to the circuit unit of the substrate chip 100. Optimizing the thickness and planar dimensions of each of the above layers can achieve an ideal resonant frequency and higher sensitivity. In this embodiment, the protective layer 400 is made of silicone rubber, but other insulating materials or combinations thereof can also be used.

[0114] It can be seen from the above technical solution that this application sets the pressure layer with pressure detection and the ultrasonic layer with ultrasonic imaging function in a transducer probe structure. The pressure signal and the ultrasonic signal are detected synchronously and independently. Therefore, ultrasonic imaging can be performed while performing pressure detection, thereby expanding the function of the product and broadening the application scenarios.

[0115] According to another aspect of the present application, a medical device is provided, comprising a transducer probe with any structure as described above.

[0116] Medical equipment application case 1:

[0117] Intravascular detection: The pressure transducer in the transducer probe is used for intravascular palpation, which can detect the protrusions in the blood vessel and the concave and convex intervals on the rough surface; the ultrasonic transducer in the transducer probe is used for vascular wall imaging and blood flow detection. The combination of the two can obtain the true morphology of the vascular wall.

[0118] Medical equipment application case 2:

[0119] Skin and subcutaneous tissue testing: The pressure transducer in the transducer probe can be placed on the skin surface to detect pulse. Because ultrasound can penetrate the skin's surface and detect subcutaneous tissue, the ultrasound transducer in the transducer probe can be used to detect tumors, nodules, and blood flow in the subcutaneous tissue.

[0120] The above description is merely a preferred embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A transducer probe, characterized in that: include: substrate chip; an insulating layer covering the upper surface of the base chip; a dual piezoelectric layer, disposed on the upper surface of the insulating layer, comprising a pressure layer, an ultrasonic layer, and an isolation layer located between the pressure layer and the ultrasonic layer and capable of shielding signal interference between the ultrasonic layer and the pressure layer; The ultrasonic layer is located above the pressure layer; A conductive component, comprising a first conductive component for electrically connecting the base chip and the pressure layer and a second conductive component for electrically connecting the base chip and the ultrasonic layer; The pressure layer includes a first electrode layer, a pressure piezoelectric layer, and a second electrode layer; the first electrode layer is arranged on the upper surface of the insulating layer; the pressure piezoelectric layer is arranged on the insulating layer and covers the first electrode layer; a plurality of arrayed piezoelectric transducer units are arranged on the pressure piezoelectric layer; the second electrode layer is arranged on the upper surface of the pressure piezoelectric layer; When the pressure piezoelectric layer receives pressure, the first electrode layer and the second electrode layer are used to transmit the pressure signal generated by the piezoelectric transducer unit to the base chip; The ultrasonic layer includes a third electrode layer, an ultrasonic piezoelectric layer and a fourth electrode layer; the third electrode layer is located above the isolation layer; the ultrasonic piezoelectric layer is arranged on the isolation layer and covers the third electrode layer, and is used to generate an ultrasonic signal; the fourth electrode layer is arranged on the upper surface of the ultrasonic piezoelectric layer; when the ultrasonic piezoelectric layer is subjected to pressure, the third electrode layer and the fourth electrode layer are used to transmit the ultrasonic signal generated by the ultrasonic transducer unit to the substrate chip.

2. The transducer probe according to claim 1, characterized in that The first electrode layer has an area smaller than that of the insulating layer, and includes a first electrode body and a first rib; the first rib is electrically connected to the first electrode body and serves as a lead-out end of the first electrode body; The second electrode layer, the isolation layer and the third electrode layer constitute an intermediate layer; The intermediate layer is provided on the upper surface of the pressure piezoelectric layer and has an area smaller than that of the pressure piezoelectric layer; The fourth electrode layer has an area smaller than that of the ultrasonic piezoelectric layer, and includes a fourth electrode body and a fourth rib; the fourth rib is electrically connected to the fourth electrode body and serves as a lead-out end of the fourth electrode body; The intermediate layer is configured to: shield signal interference between the ultrasonic piezoelectric layer and the pressure piezoelectric layer, and constitute the pressure layer with the pressure piezoelectric layer and the first electrode layer and transmit the pressure signal generated by the pressure piezoelectric layer to the base chip; and constitute the ultrasonic layer with the ultrasonic piezoelectric layer and the fourth electrode layer and transmit the ultrasonic signal generated by the ultrasonic piezoelectric layer to the base chip.

3. The transducer probe according to claim 2, characterized in that The intermediate layer includes: The second electrode layer includes a second electrode body and a second rib; the second rib is electrically connected to the second electrode body and serves as an extension end of the second electrode body; the second electrode layer is located directly above the first electrode layer; The portion of the ultrasonic piezoelectric layer in contact with the second electrode layer is polarized, and the portion in contact with the pressure piezoelectric layer is not polarized.

4. The transducer probe according to claim 2, characterized in that The intermediate layer includes: a second electrode layer, disposed on the upper surface of the piezoelectric layer and having an area smaller than that of the piezoelectric layer, comprising a second electrode body and a second rib; the second rib being electrically connected to the second electrode body and serving as an extension end of the second electrode body; the isolation layer; a third electrode layer, located above the isolation layer, comprising a third electrode body and a third rib, wherein the third rib is electrically connected to the third electrode body and serves as an extension end of the third electrode body; the ultrasonic piezoelectric layer is disposed on the isolation layer and covers the third electrode layer; The first electrode layer and the second electrode layer are used to transmit the pressure signal generated by the piezoelectric transducer unit to the base chip, and the third electrode layer and the fourth electrode layer are used to transmit the ultrasonic signal generated by the ultrasonic transducer unit to the base chip.

5. The transducer probe according to claim 3, characterized in that: The base chip is provided with a first contact point, a second contact point and a fourth contact point; The first contact point is connected to the first rib via a first conductive post; the second contact point is connected to the second rib via a second conductive post; the fourth contact point is connected to the fourth rib via a fourth conductive post; The first conductive pillar, the second conductive pillar, and the fourth conductive pillar are all arranged through the dual piezoelectric layer and avoid the first electrode layer, the second electrode layer, and the fourth electrode layer; The first contact point, the first conductive column, the second contact point and the second conductive column constitute the first conductive component; the second contact point, the second conductive column, the fourth contact point and the fourth conductive column constitute the second conductive component.

6. The transducer probe according to claim 5, characterized in that: The cross-sectional area of ​​the first conductive column is smaller than that of the first rib; the cross-sectional area of ​​the second conductive column is smaller than that of the second rib; and the cross-sectional area of ​​the fourth conductive column is smaller than that of the fourth rib.

7. The transducer probe according to claim 3 or 4, characterized in that: An excitation layer is etched on the first electrode layer, the fourth electrode layer, the second electrode layer in the middle layer or the second electrode layer in the middle layer, and the third electrode layer.

8. The transducer probe according to claim 7, characterized in that: The invention also includes a protective layer, which is arranged above the ultrasonic piezoelectric layer and covers the fourth electrode layer.

9. The transducer probe according to claim 3, characterized in that: The thickness of the ultrasonic piezoelectric layer is different from the thickness of the pressure piezoelectric layer.

10. A medical device, characterized in that: Comprising the transducer probe according to any one of claims 1 to 9.

11. A method for manufacturing a transducer probe, characterized in that: include: Forming a substrate chip based on a CMOS process; forming an insulating layer on a surface of the base chip; Depositing a pressure layer, an isolation layer and an ultrasonic layer on the surface of the insulating layer in order from bottom to top; The isolation layer is used to shield the signal interference between the ultrasonic layer and the pressure layer; the pressure layer, the isolation layer and the ultrasonic layer constitute a dual piezoelectric layer; The pressure layer includes a first electrode layer, a pressure piezoelectric layer, and a second electrode layer; the first electrode layer is arranged on the upper surface of the insulating layer; the pressure piezoelectric layer is arranged on the insulating layer and covers the first electrode layer; a plurality of arrayed piezoelectric transducer units are arranged on the pressure piezoelectric layer; the second electrode layer is arranged on the upper surface of the pressure piezoelectric layer; When the pressure piezoelectric layer receives pressure, the first electrode layer and the second electrode layer are used to transmit the pressure signal generated by the piezoelectric transducer unit to the base chip; The ultrasonic layer includes a third electrode layer, an ultrasonic piezoelectric layer, and a fourth electrode layer; the third electrode layer is located above the isolation layer; the ultrasonic piezoelectric layer is disposed on the isolation layer and covers the third electrode layer, and is configured to generate an ultrasonic signal; the fourth electrode layer is disposed on the upper surface of the ultrasonic piezoelectric layer; when the ultrasonic piezoelectric layer is subjected to pressure, the third and fourth electrode layers are configured to transmit the ultrasonic signal generated by the ultrasonic transducer unit to the substrate chip; A first conductive component electrically connecting the base chip and the pressure layer is provided between the base chip and the pressure layer, and a second conductive component electrically connecting the base chip and the ultrasound layer is provided between the base chip and the ultrasound layer; the first conductive component and the second conductive component constitute the conductive component of the transducer probe.

12. The manufacturing method according to claim 11, characterized in that: The manufacturing process of the dual piezoelectric layer includes: Manufacturing the piezoelectric layer: depositing a layer of metal material on the surface of the insulating layer as a first electrode layer; depositing a pressure piezoelectric layer on the insulating layer and the first electrode layer; and depositing a layer of metal material on the pressure piezoelectric layer as a second electrode layer; Making the isolation layer: depositing an isolation layer on the second electrode layer, wherein the thickness of the isolation layer is an odd multiple of a quarter of the ultrasonic wavelength; The ultrasonic layer is produced by depositing a layer of metal material on the isolation layer as a third electrode layer; coating an ultrasonic piezoelectric layer above the third electrode layer; polarizing the portion of the ultrasonic piezoelectric layer in contact with the third electrode layer, and not polarizing the portion not in contact with the third electrode layer; and depositing a layer of metal material on the ultrasonic piezoelectric layer as a fourth electrode layer.

13. The manufacturing method according to claim 11, characterized in that: The manufacturing process of the dual piezoelectric layer includes: Depositing a layer of metal material on the surface of the insulating layer as a first electrode layer; depositing a piezoelectric layer on the insulating layer and the first electrode layer; Depositing a layer of metal material on the pressure piezoelectric layer as a second electrode layer, wherein the second electrode layer is located directly above the first electrode layer; Coating an ultrasonic piezoelectric layer on the second electrode layer; polarizing the portion of the ultrasonic piezoelectric layer in contact with the second electrode layer, and not polarizing the portion not in contact with the second electrode layer; A layer of metal material is deposited on the ultrasonic piezoelectric layer as a fourth electrode layer.

14. The manufacturing method according to claim 12, characterized in that: The method of electrically connecting the conductive component to the base chip and the pressure layer, and electrically connecting the base chip and the ultrasonic layer includes: providing first to fourth contact points on the base chip; The first electrode layer includes a first electrode body and a first rib that are separated by a predetermined distance and electrically connected; the second electrode layer includes a second electrode body and a second rib that are separated by a predetermined distance and electrically connected; the third electrode layer includes a third electrode body and a third rib that are separated by a predetermined distance and electrically connected; the fourth electrode layer includes a fourth electrode body and a fourth rib that are separated by a predetermined distance and electrically connected; the first rib, the second rib, the third rib, and the fourth rib are staggered. A first through hole, a second through hole, a third through hole, and a fourth through hole are formed in an area where the first rib and the first contact point are opposite, an area where the second rib and the second contact point are opposite, an area where the third rib and the third contact point are opposite, and an area where the fourth rib and the fourth contact point are opposite; The first through hole passes through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first rib, and the insulating layer, and allows the first contact point to leak out; the second through hole passes through the isolation layer, the second rib, the pressure piezoelectric layer, and the insulating layer, and allows the second contact point to leak out; the third through hole passes through the ultrasonic piezoelectric layer, the third rib, the pressure layer, and the insulating layer, and allows the third contact point to leak out; the fourth through hole passes through the fourth rib, the ultrasonic piezoelectric layer, the fourth rib, the pressure piezoelectric layer, and the insulating layer, and allows the fourth contact point to leak out; depositing a conductive medium inside and above the first through hole, the second through hole, the third through hole, and the fourth through hole to form a first conductive pillar, a second conductive pillar, a third conductive pillar, and a fourth conductive pillar; The first conductive pillar and the second conductive pillar are used to electrically connect the base chip and the pressure piezoelectric layer; the third conductive pillar and the fourth conductive pillar are used to electrically connect the base chip and the ultrasonic piezoelectric layer.

15. The manufacturing method according to claim 13, characterized in that: The method of electrically connecting the conductive component to the base chip and the pressure layer, and electrically connecting the base chip and the ultrasonic layer includes: Disposing a first contact point, a second contact point, and a fourth contact point on the base chip; The first electrode layer includes a first electrode body and a first rib that are separated by a predetermined distance and electrically connected; the second electrode layer includes a second electrode body and a second rib that are separated by a predetermined distance and electrically connected; the fourth electrode layer includes a fourth electrode body and a fourth rib that are separated by a predetermined distance and electrically connected; the first rib, the second rib, and the fourth rib are staggered. A first through hole, a second through hole, and a fourth through hole are formed in an area where the first rib and the first contact point are opposite, an area where the second rib and the second contact point are opposite, and an area where the fourth rib and the fourth contact point are opposite; The first through hole passes through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first rib, and the insulating layer, and allows the first contact point to leak out; the second through hole passes through the ultrasonic piezoelectric layer, the second rib, the pressure piezoelectric layer, and the insulating layer, and allows the second contact point to leak out; the fourth through hole passes through the fourth rib, the ultrasonic piezoelectric layer, the second rib, the pressure piezoelectric layer, and the insulating layer, and allows the fourth contact point to leak out; A conductive medium is deposited inside and over the first through-hole, the second through-hole, and the fourth through-hole to form a first conductive pillar, a second conductive pillar, and a fourth conductive pillar.

16. The production method according to claim 14 or 15, characterized in that: Also includes: A protective layer is deposited on the ultrasonic layer; the protective layer covers the ultrasonic piezoelectric layer, the fourth electrode layer and the top of each conductive column.

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