Substrate processing equipment

Abstract

A substrate processing device includes: a chamber having a processing space; a first power source, the first power source is connected to a first component arranged in the processing space and transmits power having a first frequency to the first component; a second power source, the second power source is arranged in the processing space, connected to a second component different from the first component, and transmits power having a second frequency lower than the first frequency to the second component; and a coupling blocking structure, the coupling blocking structure is installed on a power line connected to the second power source and the second component, wherein the coupling blocking structure is electrically connected to the power line and includes a wire having a coil shape.

Description

Technical Field

[0001] Embodiments of the inventive concepts described herein relate to a substrate processing apparatus. Background Art

[0002] Plasma refers to an ionized gas state, including ions, free radicals, electrons, etc. Plasma is generated by extremely high temperature, strong electric field or radio frequency (RF) electromagnetic field. Semiconductor device manufacturing processes may include an etching process for removing a thin film formed on a substrate such as a wafer using plasma. The etching process is performed as ions and / or free radicals contained in the plasma collide with or react with the thin film on the substrate.

[0003] An apparatus for processing a substrate such as a wafer using plasma includes: a processing chamber having a processing space; an RF power supply for generating the above-mentioned electric field or RF electromagnetic field; and a heater for adjusting the temperature of the processed substrate. In addition, the heater is connected to a heater power supply that transmits power to the heater via a heater pipeline. In this way, in the apparatus for processing a substrate using plasma, since the high-frequency power applied by the RF power supply flows into the heater power supply through the heater, the heater power supply may malfunction or fail. In addition, Figure 1 The etching rate "A" according to the distance from the center of the substrate when the heater line is removed from the heater and the etching rate "B" according to the distance from the center of the substrate when the heater and the heater line are connected to each other are illustrated, where the reference symbol E / R refers to the etching rate and the reference symbol R refers to the radius of the substrate. Figure 1 It can be seen that when the heater and the heater line are connected to each other, the etching rate of the substrate is lower. This is because the high frequency power applied by the RF power source flows through the heater to the heater power source. Summary of the invention

[0004] Embodiments of the inventive concept provide a substrate processing apparatus that can efficiently process a substrate.

[0005] Embodiments of the inventive concept also provide a substrate processing apparatus that can further improve an etching rate of a substrate.

[0006] Embodiments of the inventive concept also provide a substrate treating apparatus that can block high frequency power applied from an RF power source from being coupled to a heater power source.

[0007] Embodiments of the inventive concept also provide a substrate processing apparatus that blocks high frequency power applied from an RF power source from being coupled to a heater power source and has a coupling blocking structure that is easily installed and / or replaced.

[0008] Aspects of the inventive concept are not limited thereto, and other unmentioned aspects of the inventive concept may be clearly understood by those skilled in the art from the following description.

[0009] The present invention contemplates providing a substrate processing device. According to an embodiment, the substrate processing device includes: a chamber having a processing space; a first power source, which is a high-frequency power source and applies power to a first component disposed in the processing space; a second power source, which is an alternating current (AC) power source or a direct current (DC) power source and applies power to a second component disposed in the processing space; and a coupling blocking structure, which is installed on a power line connected to the second power source and the second component and blocks high-frequency power generated by the first power source from coupling to the second power source, wherein the coupling blocking structure is electrically connected to the power line and includes a wire having a coil shape.

[0010] According to an embodiment, the coupling blocking structure may further include a dielectric having a columnar shape around which the conductive line is wound.

[0011] According to an embodiment, the spiral groove in which the conductive line is disposed may be formed in the dielectric.

[0012] According to an embodiment, the coupling blocking structure may further include a conductive portion electrically connected to one end of the conductive line and one end of the electric power line.

[0013] According to an embodiment, a pin groove into which a conductive pin connected to one end of the power line is inserted may be formed in the conductive portion.

[0014] According to an embodiment, the coupling blocking structure may further include: a dielectric having a columnar shape around which the wire is wound; a conductive portion electrically connected to one end of the wire and one end of the power line; and an insulator surrounding the conductive portion, the dielectric and the wire.

[0015] According to an embodiment, the second component may be a heater that heats the processing space or a substrate processed in the processing space.

[0016] The first component may be an electrode plate that generates plasma in the processing space.

[0017] In addition, the present invention contemplates providing a substrate processing apparatus. According to an embodiment, the substrate processing apparatus includes: a chamber having a processing space; a first power source generating a radio frequency (RF) electromagnetic field; a second power source transmitting power to a heater disposed in the processing space; and a coupling blocking structure installed on a power line disposed between the second power source and the heater, wherein the coupling blocking structure is electrically connected to the power line and includes a wire having a coil shape.

[0018] According to an embodiment, the coupling blocking structure may further include a dielectric having a columnar shape around which the conductive line is wound.

[0019] According to an embodiment, the spiral groove in which the conductive line is disposed may be formed in the dielectric.

[0020] According to an embodiment, the power line may include: a first power line, which is arranged at the front end of the coupling blocking structure; and a second power line, which is arranged at the rear end of the coupling blocking structure, and the coupling blocking structure may include: a first conductive part, which is electrically connected to one end of the wire and one end of the first power line; and a second conductive part, which is electrically connected to the other end of the wire and one end of the second power line.

[0021] According to an embodiment, a pin groove into which a conductive pin connected to the power line is inserted may be formed in at least one of the first conductive portion and the second conductive portion.

[0022] According to an embodiment, at least one of the first conductive portion and the second conductive portion may have a columnar shape.

[0023] According to an embodiment, the coupling blocking structure may further include: a dielectric having a columnar shape around which the wire is wound; a conductive portion electrically connected to one end of the wire and one end of the power line; and an insulator surrounding the conductive portion, the dielectric and the wire.

[0024] According to an embodiment, the first power source may be an RF power source that applies power to the antenna or the electrode plate, and the second power source may be an AC power source or a DC power source that transmits power to the heater.

[0025] In addition, the present invention contemplates providing a substrate processing device. According to an embodiment, the substrate processing device includes: a chamber having a processing space; a support unit supporting a substrate in the processing space; an RF power source generating an electric field in the processing space; a heating power source transmitting power to a heater provided in the support unit; and a coupling blocking structure installed on a power line provided between the heating power source and the heater, wherein the coupling blocking structure may include: a wire electrically connected to the power line and having a coil shape; and a dielectric having a columnar shape and having a spiral groove in which the wire is provided, the wire being wound around the dielectric.

[0026] According to an embodiment, the coupling blocking structure may further include: a conductive portion electrically connected to one end of the conductive line and one end of the electric power line; and an insulator surrounding the conductive portion, the dielectric, and the conductive line.

[0027] According to an embodiment, any one of a first coupling barrier structure in which a wire is wound around a dielectric “n” times and a second coupling barrier structure in which the wire is wound around a dielectric a number of times different from that of the first coupling barrier structure may be installed on a power line.

[0028] According to an embodiment, any one of a first coupling barrier structure in which the conductive line has a first thickness and a second coupling barrier structure in which the conductive line has a second thickness different from the first thickness may be installed on the power line. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other objects and features will become apparent from the following description with reference to the following drawings, wherein like reference numerals refer to like parts throughout the various drawings unless otherwise specified, and wherein:

[0030] Figure 1 is a graph illustrating an etch rate of a substrate when a heater line is connected to a heater and when the heater line is removed from the heater;

[0031] Figure 2 is a diagram illustrating a substrate processing apparatus according to an embodiment of the inventive concept;

[0032] Figure 3 The example is set in Figure 2 FIG. 1 is a diagram of a substrate processing apparatus in a processing chamber;

[0033] Figure 4 is an example Figure 3 A diagram of a schematic shape of a coupling barrier structure;

[0034] Figure 5 is an example Figure 4 a cross-sectional view of a first conductive portion, a second conductive portion, and a conductive wire;

[0035] Figure 6 is an example in which the heating power line is connected to Figure 4 A diagram of the state of the coupling barrier structure;

[0036] Figure 7 is a diagram depicting comparisons between substrate processing rates when a heating power line is not connected to a heating member; when a heating power line is connected to the heating member and a coupling blocking structure is not installed; and when a heating power line is connected to the heating member and a coupling blocking structure is installed according to an embodiment of the inventive concept;

[0037] Figures 8 to 10 is a diagram illustrating a coupling blocking structure according to another embodiment of the inventive concept; and

[0038] Fig.11 is a graph illustrating blocking characteristics of high frequency power when a coupling blocking structure according to another embodiment of the inventive concept is installed in a substrate processing apparatus. DETAILED DESCRIPTION

[0039] Hereinafter, exemplary embodiments of the inventive concept will be described in detail with reference to the accompanying drawings so that those skilled in the art to whom the inventive concept belongs can easily implement the inventive concept. However, the inventive concept can be implemented in various different forms and is not limited to the embodiments. In addition, in the description of the embodiments of the inventive concept, when the relevant known functions or configurations make the essence of the inventive concept unnecessarily unclear, their detailed description will be omitted. In addition, the same component symbols are used throughout the drawings for parts that perform similar functions and operations.

[0040] The expression "including" some components may mean that another component may be further included rather than excluded, unless there is a particularly contradictory description. In detail, the terms "including" and "having" are used to mark the presence of features, quantities, steps, operations, components, parts or combinations thereof described in the specification, and it is understood that one or more other features, quantities, steps, operations, components, parts or combinations thereof may be added.

[0041] A singular expression includes a plural expression unless the context clearly indicates otherwise. Furthermore, in the drawings, the shapes and sizes of components may be exaggerated for clearer description.

[0042] Terms such as first and second may be used to describe various components, but the components are not limited to the terms. The terms may be used only for the purpose of distinguishing one component from another component. For example, a first component may be named a second component, and similarly, a second component may be named a first component without departing from the scope of the present inventive concept.

[0043] When it is mentioned that one component is "connected to" or "electrically connected to" another component, it should be understood that the first component may be directly connected to or electrically connected to the second component, but a third component may be provided therebetween. On the other hand, when it is mentioned that a component is "directly connected to" or "directly electrically connected to" another component, it should be understood that there is no third component therebetween. It should be explained that other expressions describing the relationship between components such as "between", "just between", "adjacent to", and "directly adjacent to" may have the same purpose.

[0044] In addition, unless otherwise defined, all terms used herein include technical or scientific terms with the same meanings as those commonly understood by those skilled in the art to which the present invention belongs. Terms defined in commonly used dictionaries should be interpreted as having meanings that overlap with the context of the relevant technology, and should not be interpreted as ideal or overly formal meanings, unless clearly defined in the specification of the present invention.

[0045] In the following, reference will be made to Figures 2 to 11 Embodiments of the inventive concept are described.

[0046] Figure 2 2 is a plan view schematically illustrating a substrate processing apparatus according to an embodiment of the present inventive concept. Figure 2 , a substrate processing apparatus 1 according to an embodiment of the inventive concept may include an indexing unit 10, a process execution unit 30, and a controller 70. The indexing unit 10 and the process execution unit 30 may be arranged along a first direction "X" when viewed from the top. Hereinafter, a direction perpendicular to the first direction "X" when viewed from the top is defined as a second direction "Y". In addition, a direction perpendicular to the first direction "X" and the second direction "Y" is defined as a third direction "Z". Here, the third direction "Z" may refer to a direction perpendicular to the ground surface.

[0047] The indexing unit 10 may include a load pot 11 , an indexing chamber 13 , a first transfer robot 15 , and a side buffer 17 .

[0048] The container 2 may be seated on the load pot 11. Some of the containers 2 seated on the load pot 11 may contain substrates "W" (e.g., wafers) transferred to the process execution unit 30. The container 2 may be transferred to the load pot 11 by a container transfer device, may be loaded into or unloaded from the load pot 11, and may be transferred. The container transfer device may be an overhead transport apparatus (hereinafter referred to as OHT), but the inventive concept is not limited thereto, and the container 2 may be transferred by various devices that transfer the container 2. In addition, the operator may directly load the container 2 into the load pot 11 or unload the container 2 seated in the load pot 11 from the load pot 11.

[0049] The index chamber 13 may be disposed between the load pot 11 and the process execution unit 30. The index chamber 13 may be maintained in an atmospheric atmosphere. A side buffer 17 for maintaining a position may be installed at one side of the index chamber 13. In addition, an alignment unit for aligning the substrate "W" may be disposed at a portion of the side buffer 17.

[0050] In addition, a first transfer robot 15 may be disposed in the index chamber 13. The first transfer robot 15 may transfer the substrate "W" between the container 2 seated in the load pot 11, a load lock chamber 31 to be described below, and a side buffer 17.

[0051] The process execution unit 30 may include a load lock chamber 31 , a transfer chamber 33 , a second transfer robot 35 , and a process chamber 37 .

[0052] The load lock chamber 31 may be arranged between the transfer chamber 33 and the index chamber 13. The load lock chamber 31 provides a space in which the substrate "W" is temporarily stored. A vacuum pump and a valve not illustrated may be installed in the load lock chamber 31 so that the internal atmosphere of the load lock chamber 31 can be switched between an atmospheric atmosphere and a vacuum atmosphere. Since the internal atmosphere of the transfer chamber 33 to be described below is maintained in a vacuum atmosphere, the atmosphere of the load lock chamber 31 can be switched between an atmospheric atmosphere and a vacuum atmosphere to transfer the substrate "W" and the like between the transfer chamber 33 and the index chamber 13.

[0053] The transfer chamber 33 may be arranged between the load lock chamber 31 and the processing chamber 37. As described above, the internal atmosphere of the transfer chamber 33 may be maintained in a vacuum atmosphere. In addition, the second transfer robot 35 may be disposed in the transfer chamber 33. The second transfer robot 35 may transfer the substrate "W" between the load lock chamber 31 and the processing chamber 37. The second transfer robot 35 may transfer the substrate "W" between the processing space of the processing chamber 37 and the transfer chamber 33. The second transfer robot 35 includes a hand. The second transfer robot 35 may be configured to move the hand in a first direction "X", a second direction "Y", and a third direction "Z". In addition, the second transfer robot 35 may be configured to rotate the hand around the third direction "Z".

[0054] At least one processing chamber 37 may be connected to the transport chamber 33. The processing chamber 37 may be a chamber in which a process on the substrate "W" is performed. The processing chamber 37 may be a liquid processing chamber in which the substrate "W" is processed by applying a processing liquid to the substrate "W". In addition, the processing chamber 37 may be a plasma chamber in which the substrate "W" is processed by using plasma. In addition, some of the processing chambers 37 may be liquid processing chambers in which the substrate "W" is processed by applying a processing liquid to the substrate "W", and other processing chambers 37 may be plasma chambers in which the substrate "W" is processed by plasma. However, the inventive concept is not limited thereto, and the substrate processing process performed in the processing chamber 37 may be variously modified to a known substrate processing process. In addition, when the processing chamber 37 is a plasma chamber in which the substrate "W" is processed by using plasma, the plasma chamber may be a chamber in which an etching or ashing process of removing a thin film on the substrate "W" is performed by using plasma. However, the inventive concept is not limited thereto, and the plasma processing process performed in the processing chamber 37 may be variously modified into a known plasma processing process. A detailed structure of the processing chamber 37 will be described below.

[0055] also, Figure 2 As an example, the transfer chamber 33 has a substantially hexagonal shape when viewed from the top, and four processing chambers 37 connected to the transfer chamber 33 are provided, but the inventive concept is not limited thereto. For example, the shape of the transfer chamber 33 and the number of processing chambers 37 may be variously modified according to the needs of the user and the number of substrates to be processed.

[0056] The controller 70 may control the substrate processing device 1. The controller 70 may control the indexing unit 10 and the process execution unit 30. The controller 70 may control the first transfer robot 15 and the second transfer robot 35. The controller 70 may control the substrate processing device disposed in the process chamber 37 so that the substrate "W" may be processed in the process chamber 37 by using plasma. In addition, the controller 70 may control the position of the hand of the second transfer robot 35. For example, the controller 70 may control the second transfer robot 35 so that the hand may move in the first direction "X", the second direction "Y", and the third direction "Z". In addition, the controller 70 may control the second transfer robot 35 so that the hand rotates around the third direction "Z". In addition, the controller 70 may control the second transfer robot 35 to drive the components installed in the hand.

[0057] In addition, the controller 70 may include: a process controller including a microprocessor (computer) that performs control of the substrate processing device 1; a user interface including a keyboard for inputting commands to allow an operator to manage the substrate processing device 1; and a display that visualizes and displays the operation status of the substrate processing device 1; and a memory unit for storing a process link library including a control process for executing a process performed by the substrate processing device 1 under the control of the process controller or a program for executing a process in a component according to various data and processing conditions. In addition, the user interface and the memory unit may be connected to the process controller. The process link library may be stored in a memory medium of the memory unit, and the memory medium may be a hard disk, and may be a transportable disc such as a CD-ROM and a DVD, and a semiconductor memory such as a flash memory.

[0058] Figure 3 For example, set Figure 2 FIG. 1 is a diagram of a substrate processing apparatus in a processing chamber. Figure 3 The substrate processing apparatus 1000 disposed in the processing chamber 37 may include a chamber 100 , a support unit 200 , a shower head unit, a gas supply unit 400 , a plasma source, a liner unit 500 , a baffle unit 600 , and a coupling blocking structure 700 .

[0059] The chamber 100 may have a processing space. The chamber 100 may provide a processing space in which a processing process for a substrate "W" is performed. The chamber 100 may be configured in a sealed shape. The chamber 100 may be made of a metal material. As an example, the chamber 100 may be made of an aluminum material. The chamber 100 may be grounded. An exhaust hole 102 may be formed in the bottom surface of the chamber 100. The exhaust hole 102 may be connected to an exhaust line 151. The exhaust line 151 is connected to a pump (not shown). Reaction byproducts generated during the process and gases remaining in the internal space of the chamber 100 may be discharged to the outside through the exhaust line 151. The interior of the chamber 100 may be decompressed to a predetermined pressure through an exhaust process.

[0060] A heater (not shown) may be provided on the wall of the chamber 100. The heater heats the wall of the chamber 100. The heater may be electrically connected to a heating power source (not shown). The heater may generate heat by resisting an electric current applied from the heating power source. The heat generated by the heater may be transferred to the inner space. The processing space may be maintained at a predetermined temperature due to the heat generated by the heater. The heater may be provided as a heating wire in a coil shape. One or more heaters may be provided on the wall of the chamber 100.

[0061] The support unit 200 may support the substrate "W" in the processing space. The support unit 200 may use electrostatic force to absorb and support the substrate "W". Different from this, the support unit 200 may support the substrate "W" in various ways such as mechanical clamping. Hereinafter, an example in which the support unit 200 is an electrostatic chuck will be described.

[0062] The support unit 200 may include a support plate 210 , an electrode plate 220 , a heating member 230 , a lower plate 240 , a plate 250 , a lower disk 260 , and a ring member 270 .

[0063] The substrate "W" is placed on the support plate 210. The support plate 210 is provided in a dish shape. The support plate 210 may be made of a dielectric material.

[0064] The upper surface of the support plate 210 may have a radius smaller than the radius of the substrate "W". When the substrate "W" is placed on the support plate 210, the edge area of ​​the substrate "W" may be located outside the support plate 210. In addition, the edge area of ​​the support plate 210 may be stepped. The insulator 214 may be arranged in the stepped edge area of ​​the support plate 210. The insulator 214 may have a ring shape when viewed from the top.

[0065] The support plate 210 receives external power to apply electrostatic force to the substrate "W". The support plate 210 has an electrostatic electrode 211. The electrostatic electrode 211 may be set to a monopolar type or a bipolar type. The electrostatic electrode 211 may be electrically connected to the suction power supply 213 via an suction power line 215. The suction power supply 213 may include a direct current (DC) power supply. The switch 212 may be installed between the electrostatic electrode 211 and the suction power supply 213. The electrostatic electrode 211 may be electrically connected to the suction power supply 213 according to the on / off state of the switch 212. When the switch 212 is turned on, a DC current may be applied to the electrostatic electrode 211. An electrostatic force is applied between the electrostatic electrode 211 and the substrate "W" by the current applied to the electrostatic electrode 211. The substrate "W" may be sucked and supported by the support plate 210 through the electrostatic force.

[0066] The heating member 230 (an example of the second component) may be disposed inside the support plate 210. The heating member 230 may be a heater. The heating member 230 may be electrically connected to a heater power source, for example, a heating power source 233 (an example of a second power source) via a heating power line 234. The heating power source 233 may be an alternating current (AC) power source or a DC power source. The heating member 230 may receive power from the heating power source 233 to adjust the temperature of the substrate "W" supported by the support unit 200 to a predetermined temperature. One or more heating members 230 may be disposed in the region of the support plate 210.

[0067] The heating power line 234 may include a first heating power line 234a and a second heating power line 234b, wherein the first heating power line 234a may be disposed at a front end of a coupling blocking structure 700 to be described below, and the second heating power line 234b may be disposed at a rear end of the coupling blocking structure 700 to be described below.

[0068] The electrode plate 220 (an example of the first component) is disposed below the support plate 210. The upper surface of the electrode plate 220 contacts the lower surface of the support plate 210. The electrode plate 220 is disposed in a dish shape. The electrode plate 220 is made of a conductive material. As an example, the electrode plate 220 may be made of an aluminum material. The upper center surface of the electrode plate 220 has an area corresponding to the lower surface of the support plate 210.

[0069] The upper flow path 221 is provided inside the electrode plate 220. The upper flow path 221 mainly cools the support plate 210. A cooling liquid is supplied to the upper flow path 221. As an example, the cooling liquid may be provided as cooling water or cooling gas.

[0070] The electrode plate 220 may be provided as a metal plate. The electrode plate 220 may be electrically connected to a high frequency power source, such as a radio frequency (RF) power source 227 (an example of a first power source) via an RF power line 226. The RF power source 227 may be configured as a high bias power RF power source. The RF power source 227 may generate an electric field or an RF electromagnetic field in the processing space of the chamber 100. The electrode plate 220 may receive high frequency power from the RF power source 227.

[0071] The plate 250 is disposed below the electrode plate 220. The plate 250 may be disposed in a circular plate shape. The plate 250 may be disposed to have an area corresponding to the electrode plate 220. The plate 250 may be disposed as an insulating plate. As an example, the plate 250 may be disposed as a dielectric material.

[0072] The lower plate 240 is disposed below the electrode plate 220. The lower plate 240 is disposed below the lower disk 260. The lower plate 240 is disposed in a ring shape.

[0073] The lower plate 260 is located below the plate 250. The lower plate 260 may be provided as an aluminum material. The lower plate 260 is provided in a circular shape when viewed from the top. A lift pin module (not illustrated) or the like that moves the transferred substrate "W" from the external transfer member to the support plate 210 may be located in the inner space of the lower plate 260.

[0074] The ring member 270 is arranged in the edge area of ​​the support unit 200. The ring member 270 has a ring shape. The ring member 270 is arranged to surround the upper part of the support plate 210. The ring member 270 may be arranged above the insulator 214 arranged in the edge area of ​​the support plate 210. The ring member 270 may be arranged as a focus ring. The ring member 270 includes an inner portion 272 and an outer portion 271. The inner portion 272 is located inside the ring member 270. The inner portion 272 is arranged to be lower than the outer portion 271. The upper surface of the inner portion 272 is arranged to have the same height as the height of the upper surface of the support plate 210. The inner portion 272 supports the edge area of ​​the substrate "W" supported by the support plate 210. The outer portion 271 is located outside the inner portion 272. The outer portion 271 is arranged to be higher than the height of the upper surface of the substrate "W". The outer portion 271 is arranged to surround the outer periphery of the substrate "W".

[0075] The showerhead unit is located above the support unit 200 in the chamber 100. The showerhead unit is positioned to face the support unit 200.

[0076] The showerhead unit includes a showerhead 310 , a gas injection plate 320 , a cover plate 330 , an upper plate 340 , an insulating ring 350 , and a driving member.

[0077] The shower head 310 is positioned to be spaced downwardly from the upper surface of the chamber 100 by a predetermined distance. The shower head 310 is located above the support unit 200. A predetermined space is formed between the shower head 310 and the upper surface of the chamber 100. The shower head 310 may be configured to have a plate shape having a constant thickness. The bottom surface of the shower head 310 may be anodized by plasma to prevent arcing. The cross section of the shower head 310 may be configured to have the same shape and the same cross-sectional area as the support unit 200. The shower head 310 includes a plurality of spray holes 311. The spray holes 311 vertically penetrate the upper and lower surfaces of the shower head 310.

[0078] The shower head 310 may be made of a material that generates a compound by reacting with plasma generated from the gas supplied through the gas supply unit 400. As an example, the shower head 310 may be made of a material that generates a compound by reacting with ions having the highest electronegativity among ions contained in the plasma. For example, the shower head 310 may be made of a material including silicon. In addition, the compound generated by the reaction between the shower head 310 and the plasma may be silicon tetrafluoride.

[0079] The shower head 310 may be electrically connected to an upper power source. The upper power source may be set as a high frequency power source. Different from this, the shower head 310 may be electrically grounded.

[0080] The gas injection plate 320 is located on the upper surface of the shower head 310. The gas injection plate 320 is located to be spaced apart from the upper surface of the chamber 100 by a predetermined distance. The gas injection plate 320 may be provided in a plate shape having a constant thickness. The heater 323 is provided at an edge region of the gas injection plate 320. The heater 323 heats the gas injection plate 320.

[0081] The gas injection plate 320 has a diffusion area 322 and an injection hole 321. The diffusion area 322 uniformly disperses the gas supplied to the injection hole 321 from the upper side. The diffusion area 322 is connected to the injection hole 321 on the lower side thereof. Adjacent diffusion areas 322 are connected to each other. The injection hole 321 is connected to the diffusion area 322 and vertically penetrates the lower surface of the diffusion area 322.

[0082] The injection hole 321 is positioned to face the injection hole 311 of the shower head 310. The gas injection plate 320 may include a metal material.

[0083] The cover plate 330 is located above the gas injection plate 320. The cover plate 330 may be provided in a plate shape having a constant thickness. The cover plate 330 has a diffusion region 332 and an injection hole 331. The diffusion region 332 uniformly disperses the gas supplied to the injection hole 331 from the upper side. The diffusion region 332 is connected to the injection hole 331 on its lower side. Adjacent diffusion regions 332 are connected to each other. The injection hole 331 is connected to the diffusion region 332 and vertically penetrates the lower surface of the diffusion region 322.

[0084] The upper plate 340 is located above the cover plate 330. The upper plate 340 may be provided in a plate shape having a constant thickness. The upper plate 340 may be provided to have the same size as that of the cover plate 330. The upper plate 340 has a supply hole 341 formed at a central portion thereof. The supply hole 341 is a hole through which gas passes. The gas having passed through the supply hole 341 is supplied to the diffusion region 332 of the cover plate 330. A cooling flow path 343 is formed inside the upper plate 340. A cooling liquid may be supplied to the cooling flow path 343. As an example, the cooling liquid may be provided as cooling water.

[0085] In addition, the showerhead 310, the gas injection plate 320, the cover plate 330, and the upper plate 340 may be supported by a rod. For example, the showerhead 310, the gas injection plate 320, the cover plate 330, and the upper plate 340 may be coupled to each other and may be supported by a rod fixed to the upper surface of the upper plate 340. In addition, the rod may be coupled to the inside of the chamber 100.

[0086] The insulating ring 350 is arranged to surround the periphery of the shower head 310, the gas injection plate 320, the cover plate 330 and the upper plate 340. The insulating ring 350 may be provided in a circular ring shape. The insulating ring 350 may be formed of a non-metallic material. The insulating ring 350 is positioned to cover the ring member 270 when viewed from the top. When viewed from the top, the surface on which the insulating ring 350 and the shower head 310 contact each other is positioned to cover the upper area of ​​the ring member 270.

[0087] The driving member may adjust the relative height between the insulating ring 350 and the shower head 310. The driving member may adjust the relative height between the insulating ring 350 and the shower head 310 to adjust the plasma density at the edge region of the substrate "W". The driving member may be connected to the insulating ring 350. The driving member may vertically raise the insulating ring 350. When the driving member raises the insulating ring 350, the side area of ​​the shower head 310 exposed to the processing space may increase. In addition, when the driving member lowers the insulating ring 350, the side area of ​​the shower head 310 exposed to the processing space may decrease.

[0088] The driving member may be made of various materials capable of raising the insulating ring 350. For example, the driving member may use a hydraulic cylinder and a pneumatic cylinder to raise the insulating ring 350. In addition, the driving member may raise the insulating ring 350 using a motor.

[0089] The gas supply unit 400 supplies gas into the chamber 100. The gas supplied by the gas supply unit 400 may be excited into a plasma state by the plasma source. In addition, the gas supplied by the gas supply unit 400 may be a gas containing fluorine. For example, the gas supplied by the gas supply unit 400 may be carbon tetrafluoride (CF 4 ).

[0090] The gas supply unit 400 includes a gas supply nozzle 410, a gas supply line 420, and a gas storage part 430. The gas supply nozzle 410 is installed at a central portion of an upper surface of the chamber 100. A spray hole is formed in a bottom surface of the gas supply nozzle 410. The spray hole supplies a process gas into the chamber 100. The gas supply line 420 connects the gas supply nozzle 410 and the gas storage part 430. The gas supply line 420 supplies the process gas stored in the gas storage part 430 to the gas supply nozzle 410. A valve 421 is installed in the gas supply line 420. The valve 421 opens or closes the gas supply line 420 and adjusts a flow rate of the process gas supplied through the gas supply line 420.

[0091] The plasma source excites the process gas in the chamber 100 into a plasma state. In an embodiment of the inventive concept, a capacitively coupled plasma (CCP) is used as a plasma source. CCP may include an upper electrode and a lower electrode inside the chamber 100. The upper electrode and the lower electrode may be vertically arranged in parallel with each other inside the chamber 100. High-frequency power may be applied to one of the two electrodes, and the other of the two electrodes may be grounded. An electromagnetic field may be formed in the space between the two electrodes, and the process gas supplied to the space may be excited into a plasma state. The process of processing the substrate "W" is performed using plasma. According to an example, the upper electrode may be provided to the showerhead unit and the lower electrode may be provided to the electrode plate 220. High-frequency power may be applied to the lower electrode, and the upper electrode may be grounded. Different from this, high-frequency power may be applied to both the upper electrode and the lower electrode. Therefore, an electromagnetic field is generated between the upper electrode and the lower electrode. The generated electromagnetic field excites the process gas provided in the chamber 100 into a plasma state.

[0092] The liner unit 500 prevents the inner wall of the chamber 100 and the support unit 200 from being damaged during a process. The liner unit 500 prevents impurities generated during a process from being deposited on the inner wall and the support unit 200. The liner unit 500 includes an inner liner 510 and an outer liner 530.

[0093] The outer liner 530 is disposed on the inner wall of the chamber 100. The outer liner 530 has a space having an open upper surface and an open lower surface. The outer liner 530 may be provided in a cylindrical shape. The outer liner 530 may have a radius corresponding to the inner surface of the chamber 100. The outer liner 530 is provided along the inner surface of the chamber 100.

[0094] The outer liner 530 may be made of an aluminum material. The outer liner 530 protects the inner surface of the body. While the process gas is excited, arc discharge may occur in the chamber 100. The arc discharge may damage the chamber 100. The outer liner 530 protects the inner surface of the body to prevent the inner surface of the body from being damaged by the arc discharge.

[0095] The inner liner 510 is disposed to surround the support unit 200. The inner liner 510 is disposed in a ring shape. The inner liner 510 is disposed to surround all the support plates 210, the electrode plates 220, and the lower plate 240. The inner liner 510 may be made of an aluminum material. The inner liner 510 protects the outer surface of the support unit 200.

[0096] The baffle unit 600 is located between the inner wall of the chamber 100 and the support unit 200. The baffle is arranged in an annular ring shape. A plurality of through holes are formed in the baffle. The gas provided in the chamber 100 passes through the through holes of the baffle and is discharged to the exhaust hole 102. The flow of the gas can be controlled according to the shape of the baffle and the shape of the through hole.

[0097] The coupling blocking structure 700 may block the coupling of the high frequency power applied by the RF power source 227 and the heating power source 233. For example, the coupling blocking structure 700 may block the electric field generated by the high frequency power applied by the RF power source 227 from flowing into the heating power source 233 through the heating member 230. The coupling blocking structure 700 may block the high frequency power applied by the RF power source 227 from flowing into the heating power source 233 through the heating member 230. For example, the coupling blocking structure 700 of the component for generating inductance may also be referred to as a coupling blocking unit, a coupling blocking member, and a coupling blocking pipeline. The coupling blocking structure 700 may be installed between the heating power source 233 and the heating member 230. For example, the coupling blocking structure 700 may be installed on the heating power line 234 disposed between the heating power source 233 and the heating member 230. For example, the coupling blocking structure 700 may be installed between the first heating power line 234a and the second heating power line 234b.

[0098] Figure 4 As an example Figure 3 The schematic shape of the coupling barrier structure, and Figure 5 As an example Figure 4 A cross-sectional view of the first conductive portion, the second conductive portion and the conductive wire. Figure 4 and Figure 5 The coupling blocking structure 700 may include a dielectric 710 , an insulator 720 , a conductive wire 731 , a first conductive portion 732 , a second conductive portion 733 , a first conductive pin 740 , and a second conductive pin 750 .

[0099] The dielectric 710 may have a columnar shape. The dielectric 710 may have a substantially cylindrical shape. A spiral groove formed in a spiral shape from one end to the other end of the dielectric 710 may be formed in the dielectric 710. The wire 731 may be disposed in the spiral groove formed in the dielectric 710.

[0100] The wire 731 can be a conductor. The wire 731 can be wound around the spiral groove formed in the dielectric 710. Therefore, the wire 731 as a whole can have a coil shape. The wire 731 can be made of the same material as the first conductive part 732 and the second conductive part 733, as described below. In addition, the wire 731 can be made of the same material as the first heating power line 234a and the second heating power line 234b, as described above. In addition, the wire 731 can be electrically connected to the first conductive part 732 and the second conductive part 733, as described below. The electrical connection between the wire 731 and the first conductive part 732 and the second conductive part 733 means a state in which the wire 731, the first conductive part 732 and the second conductive part 733 are separately arranged but in contact with each other, and a state in which the wire 731, the first conductive part 732 and the second conductive part 733 are arranged as a whole.

[0101] The first conductive portion 732 and the second conductive portion 733 may be conductors. The first conductive portion 732 and the second conductive portion 733 may be electrically connected to the wire 731. For example, the first conductive portion 732 may contact one end of the wire 731, and the second conductive portion 733 may contact the other end of the wire 731. The first conductive portion 732 and the second conductive portion 733 may have a columnar shape, and their vertical lengths are smaller than the vertical length of the dielectric 710. In addition, the first conductive portion 732 may be disposed to contact one end of the dielectric 710, and the second conductive portion 733 may be disposed to contact the other end of the dielectric 710. In addition, a first pin slot 734 may be formed in the first conductive portion 732, and a second pin slot 735 may be formed in the second conductive portion 733. The first conductive pin 740 may be inserted into the first pin slot 734. In addition, the second conductive pin 750 may be inserted into the second pin slot 735. The first conductive pin 740 and the second conductive pin 750 may be conductors and may be made of the same material as the conductive wire 731, the first conductive portion 732, and the second conductive portion 733. In addition, the first conductive pin 740 and the second conductive pin 750 may be made of the same material as the first heating power line 234a and the second heating power line 234b, as described above.

[0102] The insulator 720 may be disposed to surround the dielectric 710, the wire 731, the first conductive portion 732, and the second conductive portion 733. The insulator 720 may surround the dielectric 710, the wire 731, the first conductive portion 732, and the second conductive portion 733, so that the surface of the first conductive portion 732 in which the first pin groove 734 is formed is exposed. In addition, the insulator 720 may surround the dielectric 710, the wire 731, the first conductive portion 732, and the second conductive portion 733, so that the surface of the second conductive portion 733 in which the second pin groove 735 is formed is exposed.

[0103] Figure 6 For example, the heating power line is connected to Figure 4 Figure 2 shows the state of the coupling barrier structure. Figure 6 , the first heating power line 234a may be electrically connected to the first conductive pin 740. The first conductive pin 740 may be electrically connected to the first conductive portion 732. The first conductive portion 732 may be electrically connected to the wire 731. The wire 731 may be electrically connected to the second conductive portion 733. The second conductive portion 733 may be electrically connected to the second conductive pin 750. The second conductive pin 750 may be electrically connected to the second heating power line 234b.

[0104] As described above, the wire 731 may have a substantially coil shape. In addition, the wire 731 may be a conductor. That is, the wire 731 may have a frequency characteristic similar to the frequency characteristic of the conductor of the component or structure that generates inductance. Therefore, the wire 731 may have a frequency characteristic that suppresses the passage of high-frequency signals. In addition, as described above, the heating power supply 233 may transmit AC power or DC power having a frequency relatively smaller than the frequency of the RF power supply 227 to the heating member 230. Therefore, the AC power or DC power generated by the heating power supply 233 may be appropriately transmitted to the heating member 230. In contrast, the RF power supply 227 may generate high-frequency power. Therefore, even when RF power such as an RF electromagnetic field or a strong electric field generated in the processing space within the chamber 100 flows through the heating member 230 to the heating power line 234, such high-frequency RF power may be blocked from flowing into the heating power supply 233 by the frequency characteristic of suppressing the passage of high-frequency signals of the wire 731.

[0105] This can also be identified through empirical data. For example, Figure 7 To illustrate a comparison between substrate processing rates when a heating power line is not connected to a heating member; when a heating power line is connected to a heating member; and when a heating power line is connected to a heating member and a coupling blocking structure is installed according to an embodiment of the inventive concept. Figure 7 In the figure, “A” indicates the rate (e.g., etching rate) of processing the substrate “W” when the heating power line 234 is removed from the heating component 230, “B” indicates the rate of processing the substrate “W” when the heating power line 234 is connected to the heating component 230 and the coupling blocking structure 700 is not installed on the heating power line 234, and “C” indicates the rate of processing the substrate “W” when the heating power line 234 is connected to the heating component 230 and the coupling blocking structure 700 is installed on the heating power line 234.

[0106] Since the etching rate of "A" is the highest, when the etching rate of "A" is set to 100%, the etching rate of "B" is 83% compared to the etching rate of "A", and the etching rate of "C" is 92% compared to the etching rate of "A". Since the situation of "A" corresponds to the situation where the heating member 230 cannot generate heat, the substrate "W" cannot be properly adjusted to the predetermined temperature. Therefore, in practice, the effective comparison targets will be "B" and "C". In addition, when "B" and "C" are compared with each other, it can be seen that the processing rate of the substrate "W" is higher when the coupling blocking structure 700 is installed.

[0107] That is, according to one embodiment of the inventive concept, the coupling blocking structure 700 blocks the RF power of the RF power source 227 from flowing into the heating power source 233 and suppresses the loss of the RF power of the RF power source 227. Therefore, the processing efficiency of the substrate "W" can be further increased, and the malfunction or failure of the heating power source 233 can also be effectively prevented. In addition, generally, the coupling blocking structure 700 according to the inventive concept has only a structure in which the wire 731 has a coil shape and the insulator 720 surrounds the wire 731, and thus does not have a large volume. Therefore, it is very easy to configure the coupling blocking structure 700 in a narrow space in the chamber 100.

[0108] Furthermore, a plurality of coupling blocking structures 700 having different input impedances are provided, a selected coupling blocking structure 700 among the coupling blocking structures 700 is installed in the substrate processing apparatus 1000 , and thus the selective RF blocking characteristics may be adjusted.

[0109] For example, Figure 8 The illustrated first coupling barrier structure 700a may have a structure substantially the same as or similar to the above-described coupling barrier structure 700. For example, the first coupling barrier structure 700a may have a first dielectric 710a, a first conductive line 731a, a (1-1)th conductive portion 732a, and a (1-2)th conductive portion 733a. The first conductive line 731a may be wound around the first dielectric 710a “n” times.

[0110] Fig. 9 The second coupling barrier structure 700b illustrated may have a structure substantially the same as or similar to the above-mentioned coupling barrier structure 700. For example, the second coupling barrier structure 700b may have a second dielectric 710b, a second conductive wire 731b, a (2-1)th conductive portion 732b, and a (2-2)th conductive portion 733b. The number of times the second conductive wire 731b is wound around the second dielectric 710b may be greater than the number of times the first conductive wire 731a is wound around the first dielectric 710a.

[0111] Fig.10The third coupling barrier structure 700c illustrated may have a structure substantially the same as or similar to the above-mentioned coupling barrier structure 700. For example, the third coupling barrier structure 700c may have a third dielectric 710c, a third conductive wire 731c, a (3-1)th conductive portion 732c, and a (3-3)th conductive portion 733c. The number of times the third conductive wire 731c is wound around the third dielectric 710c may be greater than the number of times the second conductive wire 731b is wound around the second dielectric 710b.

[0112] In this case, when the number of times the wire 731, the first wire 731a, the second wire 731b, and the third wire 731c are wound around the dielectric 710, the first dielectric 710a, the second dielectric 710b, and the third dielectric 710c is changed, the wire 731, the first wire 731a, the second wire 731b, and the third wire 731c have different input impedances. Fig.11 As illustrated, the coupling barrier structure 700, the first coupling barrier structure 700a, the second coupling barrier structure 700b, and the third coupling barrier structure 700c have different RF blocking characteristics. a1 indicates the RF blocking characteristics of the first coupling barrier structure 700a, b1 indicates the RF blocking characteristics of the second coupling barrier structure 700b, and c1 indicates the RF blocking characteristics of the third coupling barrier structure 700c. That is, the user can adjust the selective RF blocking characteristics by replaceably installing the selected coupling barrier structure 700, the first coupling barrier structure 700a, the second coupling barrier structure 700b, and the third coupling barrier structure 700c having different RF blocking characteristics from among the coupling barrier structure 700, the first coupling barrier structure 700a, the second coupling barrier structure 700b, and the third coupling barrier structure 700c in the substrate processing apparatus 1000. Since pin grooves having the same size and the same shape are formed in the coupling blocking structure 700, the first coupling blocking structure 700a, the second coupling blocking structure 700b and the third coupling blocking structure 700c, the coupling blocking structure 700, the first coupling blocking structure 700a, the second coupling blocking structure 700b and the third coupling blocking structure 700c can be more easily replaced.

[0113] In the above examples, it has been described that the RF blocking characteristics are selectively adjusted by replacing and installing the coupling barrier structures 700, the first coupling barrier structure 700a, the second coupling barrier structure 700b, and the third coupling barrier structure 700c around which the wire 731, the first wire 731a, the second wire 731b, and the third wire 731c are wound different times, but the inventive concept is not limited thereto. For example, the RF blocking characteristics may be selectively adjusted by replacing and installing the coupling barrier structures 700, the first coupling barrier structure 700a, the second coupling barrier structure 700b, and the third coupling barrier structure 700c around which the wire 731, the first wire 731a, the second wire 731b, and the third wire 731c are wound the same number of times but having different diameters of the wire 731, the first wire 731a, the second wire 731b, and the third wire 731c when viewed from a cross section. For example, the first conductive line 731a of the first coupling barrier structure 700a may have a first thickness, and the second conductive line 731b of the second coupling barrier structure 700b may have a second thickness different from the first thickness. The user can selectively adjust the RF blocking characteristics by installing one coupling barrier structure selected from the first coupling barrier structure 700a and the second coupling barrier structure 700b on the heating power line 234.

[0114] In the above examples, it has been described that the RF blocking characteristics are selectively adjusted by replacing and installing the coupling barrier structures 700, the first coupling barrier structure 700a, the second coupling barrier structure 700b, and the third coupling barrier structure 700c around which the wire 731, the first wire 731a, the second wire 731b, and the third wire 731c are wound different times, but the inventive concept is not limited thereto. For example, the RF blocking characteristics can be selectively adjusted by replacing and installing the coupling barrier structures 700, the first coupling barrier structure 700a, the second coupling barrier structure 700b, and the third coupling barrier structure 700c around which the wire 731, the first wire 731a, the second wire 731b, and the third wire 731c are wound the same number of times but have different turn gaps of the wire 731, the first wire 731a, the second wire 731b, and the third wire 731c.

[0115] In the above examples, the substrate processing apparatus 1000 is described as a CCP type plasma processing apparatus, but the present invention is not limited thereto. For example, the coupling blocking structure 700 may be even equally / similarly applied to an inductively coupled plasma (ICP) type plasma processing apparatus. For example, the RF power source 227 may be connected to an antenna that generates an RF electromagnetic field or a strong electric field.

[0116] It has been described in the above example that the coupling blocking structure 700 is installed on the heating power line 234, but the present inventive concept is not limited thereto. For example, the coupling blocking structure 700 may be installed on a line provided between a power source that generates power having a frequency lower than that of the RF power source 227 and a component connected to the power source and provided in the processing space of the chamber 100.

[0117] In the above examples, an apparatus for performing an etching process on a substrate has been described. However, unlike this, the present inventive concept can be applied to an apparatus that performs various processes using plasma and has a shower head facing the substrate. For example, the shower head unit, the substrate processing apparatus including the shower head unit, and the substrate processing method can be applied to an apparatus that performs a deposition process or an ashing process using plasma.

[0118] According to embodiments of the inventive concept, a substrate may be efficiently processed.

[0119] Furthermore, according to embodiments of the inventive concept, an etching rate of a substrate may be further increased.

[0120] Furthermore, according to an embodiment of the inventive concept, it is possible to block high frequency power applied by an RF power source from being coupled to a heater power source.

[0121] Furthermore, according to embodiments of the inventive concept, coupling of high frequency power applied by an RF power source to a heater power source may be blocked, and a coupling blocking structure may be easily installed and / or replaced.

[0122] The effects of the inventive concept are not limited to the above-mentioned effects, and those skilled in the art to which the inventive concept pertains may clearly understand unmentioned effects based on the specification and the accompanying drawings.

[0123] The above detailed description illustrates the inventive concept. In addition, the above-mentioned contents describe exemplary embodiments of the inventive concept, and the inventive concept can be used in various other combinations, changes and environments. That is, the inventive concept can be modified and corrected without departing from the scope of the inventive concept disclosed in the specification, the equivalent scope of the written disclosure and / or the technical or cognitive scope of those skilled in the art. The written implementation describes the best state of the technical spirit for implementing the inventive concept, and various changes required in the detailed application field and purpose of the inventive concept can be made. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed implementation state. In addition, the attached claims should be interpreted to include other implementations.

Claims

1. A substrate processing device, comprising: a chamber having a processing space; a first power source, the first power source being a high frequency power source and configured to apply power to a first component disposed in the processing space; a second power source, the second power source being an alternating current (AC) power source or a direct current (DC) power source and configured to apply power to a second component disposed in the processing space; and a coupling blocking structure installed on a power line connected to the second power source and the second component and configured to block high frequency power generated by the first power source from coupling to the second power source, wherein the coupling barrier structure is electrically connected to the power line, The coupling blocking structure comprises: a wire having a coil shape; a dielectric having a cylindrical shape, the conductive wire being wound around the dielectric; a conductive portion electrically connected to one end of the conductive wire and one end of the power line; and an insulator, the insulator being configured to surround the conductive portion, the dielectric and the wire, wherein a spiral groove is formed in the dielectric, the wire is arranged in the spiral groove, and A pin groove is formed in the conductive portion, and a conductive pin connected to the one end of the power line is inserted into the pin groove. 2 . The substrate processing apparatus according to claim 1 , wherein the second component is a heater configured to heat the processing space or a substrate processed in the processing space. 3 . The substrate processing apparatus according to claim 2 , wherein the first component is an electrode plate configured to generate plasma in the processing space.

4. A substrate processing device, comprising: a chamber having a processing space; a first power source configured to generate a radio frequency (RF) electromagnetic field; a second power source configured to transmit power to a heater disposed in the processing space; and a coupling blocking structure installed on a power line disposed between the second power source and the heater, wherein the coupling barrier structure is electrically connected to the power line, The coupling blocking structure comprises: a wire having a coil shape; a dielectric having a cylindrical shape, the conductive wire being wound around the dielectric; a conductive portion electrically connected to one end of the conductive wire and one end of the power line; and an insulator, the insulator being configured to surround the conductive portion, the dielectric and the wire, wherein a spiral groove is formed in the dielectric, the wire is arranged in the spiral groove, and A pin groove is formed in the conductive portion, and a conductive pin connected to the one end of the power line is inserted into the pin groove.

5. The substrate processing apparatus according to claim 4, wherein the power line comprises: a first power line, the first power line being disposed at a front end of the coupling blocking structure; and a second power line, the second power line being disposed at a rear end of the coupling blocking structure, and The conductive part further comprises: a first conductive portion electrically connected to one end of the conductive wire and one end of the first power line; and The second conductive portion is electrically connected to the other end of the conductive wire and one end of the second power line. 6 . The substrate processing apparatus according to claim 5 , wherein a pin groove into which a conductive pin connected to the power line is inserted is formed in at least one of the first conductive portion and the second conductive portion. 7 . The substrate processing apparatus according to claim 5 , wherein at least one of the first conductive portion and the second conductive portion has a columnar shape.

8. The substrate processing apparatus according to any one of claims 4 to 7, wherein the first power source is an RF power source configured to apply power to an antenna or an electrode plate, and The second power source is an AC power source or a DC power source configured to transmit power to the heater.

9. A substrate processing device, comprising: a chamber having a processing space; a supporting unit configured to support a substrate in the processing space; an RF power source configured to generate an electric field in the processing space; a heating power source configured to transmit power to a heater disposed in the support unit; and a coupling blocking structure installed on a power line provided between the heating power source and the heater, The coupling blocking structure comprises: a conductive wire electrically connected to the power line and having a coil shape; a dielectric having a cylindrical shape, the conductive wire being wound around the dielectric; a conductive portion electrically connected to one end of the conductive wire and one end of the power line; and an insulator, the insulator being configured to surround the conductive portion, the dielectric and the wire, wherein a spiral groove is formed in the dielectric, the wire is arranged in the spiral groove, and A pin groove is formed in the conductive portion, and a conductive pin connected to the one end of the power line is inserted into the pin groove.

10. The substrate processing apparatus according to claim 9, wherein the coupling barrier structure is configured as one of a first coupling barrier structure in which the conductive wire is wound around the dielectric "n" times and a second coupling barrier structure in which the conductive wire is wound around the dielectric a number of times different from the number of times in the first coupling barrier structure, and the coupling barrier structure is installed on the power line.

11. The substrate processing apparatus according to claim 9, wherein the coupling blocking structure is configured as one of a first coupling blocking structure in which the conductive line has a first thickness and a second coupling blocking structure in which the conductive line has a second thickness different from the first thickness, and the coupling blocking structure is installed on the power line.

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