A color solar cell with constant color at wide incident angles

Abstract

The present invention discloses a color solar cell that maintains color under wide-angle incidence. The solar cell structure, from bottom to top, comprises a bottom optical color layer, a bottom translucent electrode, a bottom charge transport layer, a light absorption layer, a top charge transport layer, a top translucent electrode, and a top transparent encapsulation layer. The bottom optical color layer is a filter film structure that maintains color under wide-angle incidence, formed by stacking two dielectric materials with a certain refractive index difference. The solar cell can display different colors and meet the layout requirements of different distributed photovoltaic environments. Due to the use of a filter film structure, the solar cell maintains color under wide-angle incidence, meaning that the same color can be observed from different angles. It also has excellent color stability and can maintain color under conditions such as long-term high temperature, radiation, and stress.

Description

Technical Field

[0001] The patent of this invention relates to the field of solar cell power generation, specifically a color solar cell whose color remains unchanged under wide-angle incidence. Background Art

[0002] Solar cell technology is a clean energy technology that can achieve photoelectric conversion. Thin-film solar cell technology, with its thin light-absorbing layer and high conversion efficiency, has gradually become a research focus in this field. Making the light-absorbing layer as thick as possible facilitates the capture of sunlight and increases the short-circuit current density of the cell. Solar cell modules typically developed for solar power stations use silicon-based thin films hundreds of meters thick, and the resulting solar cells are not translucent. With the development of organic and perovskite materials, and the demand for distributed power supply in urban environments, the development of building-integrated photovoltaic (BIPV) solar cells has become particularly important.

[0003] BIPV not only needs to effectively utilize sunlight, but also, due to the unique nature of its placement, it must meet environmental requirements both inside and outside the cells. For example, in high-rise buildings, BIPV is required to have the lowest possible light reflectivity to reduce light pollution. In office buildings, BIPV is required to filter out harmful ultraviolet light, thereby reducing heat radiation inside the building. Conventional color solar cells, however, are not specially treated on the surface of integrated glass-framed buildings. Due to the polarization effect, they display completely different colors, severely limiting the aesthetic appeal of the integrated building.

[0004] To meet the market demand for photovoltaic modules with different colors, several technical solutions have been disclosed for producing colored photovoltaic modules. For example, patent CN105280728A discloses a colored solar cell. A filter layer is provided in the active layer. The filter layer performs narrow-band modulation on the reflected light from the cell surface within the full color range, so that the cell surface presents different colors. This technical solution has very complex process conditions and is currently difficult to industrialize. Another example is patent CN203536452U, which discloses the use of a colored epoxy resin layer to achieve different color effects for the cell. However, this colored epoxy resin layer has the inherent problem of insufficient weather resistance, and will have significant stability issues with long-term use. Another example is the technology disclosed in CN203967102U, which covers the front of the solar cell with a transparent active color film. This technology controls the luminous color of multiple transparent LEDs or OLEDs by controlling the driving voltage. However, there are problems such as color distortion and defects caused by LED or OLED light attenuation, and reduced power generation efficiency caused by temperature rise during the operation of the LED or OLED.

[0005] Currently, there's no proven method for producing color solar cells with reliable stability and a reliable process. More importantly, the reflected color of current color solar cells shifts significantly with viewing angle, severely limiting the color reproduction of large-area color solar cells. Developing a color solar cell technology that can maintain consistent color across a wide range of incident angles is crucial for the application of distributed photovoltaics in complex urban environments. Summary of the Invention

[0006] The problem to be solved by this invention is how to design a color solar cell that maintains color stability across a wide range of incident angles, achieving the effect of displaying the same color at different viewing angles. This color must exhibit not only excellent color purity but also ensure color stability, preventing degradation after long-term high-temperature exposure.

[0007] In order to solve the above problems, the technical solution of the present invention is:

[0008] A color solar cell with unchanged color under wide-angle incidence. The structure comprises, from bottom to top, a bottom optical color layer, a bottom semi-transparent electrode, a bottom charge transport layer, a light absorption layer, a top charge transport layer, a top semi-transparent electrode, and a top transparent encapsulation layer. The characteristic of the solar cell is that the bottom optical color layer is a filter film system with unchanged color under wide-angle incidence.

[0009] Preferably, the filter film system is formed by stacking two dielectric materials with a certain refractive index difference (Δn ≥ 0.4); one is a higher refractive index material (n ≥ 1.8), which can be selected from zirconium oxide, zinc oxide, hafnium oxide, tantalum oxide, silicon nitride or their compounds; the other is an even higher refractive index material (n ≥ 2.3), which can be selected from titanium oxide, zinc sulfide, silicon and their compounds; the thickness of each layer is 30-150 nm, and the total number of layers is 4-20 layers.

[0010] As a preferred method, the film transfer matrix method and CIE colorimetry theory are used to optimize the bottom optical color layer by combining the film reflection spectrum requirements (color, bandwidth and other parameters) under multiple angles and the colorimetry requirements (color coordinates, CIE2000 color difference, etc.). The film design is mainly based on the target spectrum curve and color coordinates (or color difference) as the comprehensive evaluation function, that is, F = a × Σ(R(λ) - R0(λ)) 2 +b×((x-x0) 2 +(y-y0) 2 ) or F = a × Σ(R(λ) - R0(λ)) 2 +b×ΔE 00 ), where R(λ) and R0(λ) are the designed reflection spectrum and the ideal target spectrum, respectively; (x, y) and (x0, y0) are the color coordinates corresponding to the designed reflection spectrum and the ideal target spectrum, respectively; ΔE00 is the CIE 2000 color difference of the color corresponding to the reflection spectrum at different angles. a and b are the weights of the two items respectively. According to the spectral response results of different colors, the corresponding weight values are adjusted to obtain the optimal result, satisfying |x-x0|≤0.7, |y-y0|≤0.7.

[0011] Preferably, the bottom optical color layer and the bottom semi-transparent electrode can be combined into one layer, that is, ITO material as a higher refractive index material is stacked with a higher refractive index material to form a filter film structure with conductive function, the higher refractive index film layer is controlled below 60nm, and the total number of layers is 4-8 layers.

[0012] Preferably, the semi-transparent electrode material is ITO or metal nanowire or metal / dielectric / metal sandwich structure.

[0013] Preferably, the light absorbing layer is made of perovskite material with excellent photovoltaic properties and has a thickness of 50 nm to 1000 nm.

[0014] Preferably, depending on the structure of the solar cell device, the bottom charge transport layer and the top charge transport layer can be respectively a hole transport layer and an electron transport layer, or a combination of an electron and a hole transport layer, with a layer thickness of 1 nm to 300 nm.

[0015] Preferably, the hole transport layer is one or more of PTAA, PEDOT:PSS, F4-TCNQ, 2-PACZ or metal oxides. The electron transport layer material is one or more of TPBi, C60, BCP, PC60BM, Bphen, Alq3 or ZnO.

[0016] Preferably, the light absorbing layer material comprises one or more of a perovskite material and an organic material, wherein the perovskite material adopts an ABX3 structure, where A is Cs + 、HN=CHNH3 + 、CH3NH3 + , Rb + 、 Na + , K + or a combination thereof; B is Sn 2+ , Pb 2+ or a combination thereof; X is a halogen anion, O 2- 、S 2- or a combination thereof.

[0017] Preferably, the top transparent encapsulation layer adopts a thermosetting sealing resin as the encapsulation material, which may be one or more conventional heat-crosslinking materials such as PDMS, PMMA, PVA, PI, etc., or a transparent UV curing resin, with a layer thickness of 100 nm to 100 μm.

[0018] Compared with the prior art, the advantages of the present invention are:

[0019] 1. By adopting a filter film structure, the color remains unchanged at a wide angle of incidence, and the same color output effect can be achieved at different observation angles.

[0020] 2. The high-low refractive index difference dielectric material system itself has excellent stability and mature preparation technology, thus ensuring that the color solar cell has excellent color stability.

[0021] 3. This color solar cell uses perovskite or organic materials as the light absorption layer, and has the characteristics of ultra-high energy-to-weight ratio and flexibility. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 The present invention relates to a color solar cell with unchanged color under wide-angle incidence. The structure comprises, from bottom to top, a bottom optical color layer, a bottom semi-transparent electrode, a bottom charge transport layer, a light absorption layer, a top charge transport layer, a top semi-transparent electrode, and a top transparent encapsulation layer.

[0023] Figure 2 This is the reflection and transmission curve of the blue optical color film and the relationship between the color changes at different incident angles

[0024] Figure 3 This is the reflection and transmission curve of the red optical color film and the relationship between the color changes at different incident angles

[0025] Figure 4 This is the reflection and transmission curve of the purple optical color film and the relationship between the color changes at different incident angles

[0026] Figure 5 This is the reflection and transmission curve of the blue-green optical color film and the relationship between the color changes at different incident angles

[0027] Figure 6 This is the reflection and transmission curve of the green optical color film and the relationship between the color changes at different incident angles

[0028] Figure 7 This is the reflection and transmission curve of the yellow optical color film and the relationship between the color changes at different incident angles DETAILED DESCRIPTION

[0029] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0030] Example 1:

[0031] The magnetron sputtering process is used to sputter the bottom optical color layer to reflect blue. The specific film system is substrate | hafnium oxide (74nm) | titanium oxide (119nm) | hafnium oxide (172nm) | titanium oxide (151nm) | hafnium oxide (191nm) | titanium oxide (51nm) | hafnium oxide (106nm). The glass substrate with a surface roughness of less than 1nm is cleaned and blown dry with nitrogen after cleaning; PVDF-HFP film is prepared on the glass substrate by scraping with a thickness of 300μm and a scraping speed of 20mm / s, and annealed (80℃, 5min); after the substrate is completed, the PVDF-HFP film is low-temperature sputtered with ITO film; after the transparent conductive cathode ITO is completed, PTAA was spin-coated on the ITO surface (4000 rpm, 30 seconds, 20 nm) and baked at 100°C for 10 minutes. A CsI·FAPbI3·MAPbBr3 perovskite (5:83:17, 1.5 mol / L, 80% N,N-dimethylformamide, 20% dimethyl sulfoxide) active layer was spin-coated on the hole transport layer (5000 rpm, 50 seconds, followed by the addition of the anti-solvent chlorobenzene for 45 seconds) and annealed at 100°C for 10 minutes. Electron transport layers C60 (30 nm) and BCP (7 nm) were evaporated on the active layer. Furthermore, a Cu metal anode (80 nm) was evaporated on the electron transport layer. The test was performed under standard test conditions: AM1.5, 100 mW / cm 2 , the open circuit voltage of the device is measured (V OC ) is 1.04V, the short-circuit current (J SC ) is 15.96 mA / cm 2 , the fill factor (FF) is 0.71, and the photoelectric conversion efficiency (PCE) is 15.1%. At vertical incidence, the reflection band color is 470nm, and the reflection peak is greater than 40%, providing sufficient brightness for color display, while the average transmittance of the remaining energy is as high as 93.6%, providing efficient transmission energy for photoelectric conversion efficiency. Its color display distribution is similar to CIE1931 chromaticity. Figure 2 As shown in , at 0-50° incidence, the color coordinates are distributed in 0.17≤x≤0.23, 0.13≤y≤0.19, and the angular characteristics are excellent.

[0032] Example 2:

[0033] The bottom optical color layer is sputtered using a magnetron sputtering process to reflect red. The specific film system is substrate | hafnium oxide (182nm) | titanium oxide (97nm) | hafnium oxide (234nm) | titanium oxide (92nm) | hafnium oxide (235nm) | titanium oxide (94nm) | hafnium oxide (229nm) | titanium oxide (93nm) | hafnium oxide (240nm) | titanium oxide (49nm) | hafnium oxide (61nm). A glass substrate with a surface roughness of less than 1 nm was cleaned and dried with nitrogen. A PVDF-HFP film was prepared on the glass substrate by doctor blading with a coating thickness of 300 μm and a coating speed of 20 mm / s, and then annealed (80°C, 5 min). After the substrate was completed, an ITO film was low-temperature sputtered on the PVDF-HFP film. After the transparent conductive cathode ITO was completed, PTAA was spin-coated on the ITO surface (4000 rpm, 30 s, 20 nm), and the formed film was baked (100°C, 10 min). A CsI·FAPbI3·MAPbBr3 perovskite (5:83:17, 1.5 mol / L, 80% N,N-dimethylformamide, 20% dimethyl sulfoxide) active layer was prepared by spin coating on the hole transport layer (5000 rpm, 50 s, then drop the anti-solvent chlorobenzene in 45s), and then anneal (100℃, 10min). Electron transport layers C60 (30nm) and BCP (7nm) were evaporated on the active layer surface. A metal anode Cu (80nm) was also evaporated on the electron transport layer. Under standard test conditions: AM1.5, 100mW / cm 2 , the open circuit voltage of the device is measured (V OC ) is 1.04V, short-circuit current (J SC ) is 18.67 mA / cm 2 , fill factor (FF) is 0.70, and photoelectric conversion efficiency (PCE) is 17.7%. At vertical incidence, the reflection band color is 670nm, and the reflection peak is greater than 65%, providing sufficient brightness component for color display, while the average transmittance of the remaining energy is as high as 84.1%, providing efficient transmission energy for photoelectric conversion efficiency. Its color display distribution is similar to CIE1931 chromaticity. Figure 3 As shown in , at 0-50° incidence, the color coordinates are distributed in 0.23≤x≤0.29, 0.33≤y≤0.36, and the angular characteristics are excellent.

[0034] Example 3:

[0035] The magnetron sputtering process is used to sputter the bottom optical color layer to reflect red. The specific film system is substrate | hafnium oxide (108nm) | titanium oxide (55nm) | hafnium oxide (31nm) | titanium oxide (64nm) | hafnium oxide (13nm) | titanium oxide (99nm) | hafnium oxide (84nm). The glass substrate with a surface roughness of less than 1nm is cleaned and blown dry with nitrogen after cleaning; PVDF-HFP film is prepared on the glass substrate by scraping with a thickness of 300μm and a scraping speed of 20mm / s, and annealed (80℃, 5min); after the substrate is completed, the PVDF-HFP film is low-temperature sputtered with ITO film; after the transparent conductive cathode ITO is completed, PTAA was spin-coated on the ITO surface (4000 rpm, 30 seconds, 20 nm) and baked at 100°C for 10 minutes. A CsI·FAPbI3·MAPbBr3 perovskite (5:83:17, 1.5 mol / L, 80% N,N-dimethylformamide, 20% dimethyl sulfoxide) active layer was spin-coated on the hole transport layer (5000 rpm, 50 seconds, followed by the addition of the anti-solvent chlorobenzene for 45 seconds) and annealed at 100°C for 10 minutes. Electron transport layers C60 (30 nm) and BCP (7 nm) were evaporated on the active layer. Furthermore, a Cu metal anode (80 nm) was evaporated on the electron transport layer. The test was performed under standard test conditions: AM1.5, 100 mW / cm 2 , the open circuit voltage of the device is measured (V OC ) is 1.05V, the short-circuit current (J SC ) is 18.21 mA / cm 2 , the fill factor (FF) is 0.73, and the photoelectric conversion efficiency (PCE) is 13.9%. At vertical incidence, the reflection band color is 440nm, and the reflection peak is greater than 40%, providing sufficient brightness component for color display, while the average transmittance of the remaining energy is as high as 90.4%, providing efficient transmission energy for photoelectric conversion efficiency. Its color display distribution is similar to CIE1931 chromaticity. Figure 4 As shown in , at 0-50° incidence, the color coordinates are distributed in 0.22≤x≤0.26, 0.13≤y≤0.2, and the angular characteristics are excellent.

[0036] Example 4:

[0037] The magnetron sputtering process is used to sputter the bottom optical color layer to reflect red. The specific film system is substrate | hafnium oxide (94nm) | titanium oxide (209nm) | hafnium oxide (29nm) | titanium oxide (185nm) | hafnium oxide (25nm) | titanium oxide (216nm) | hafnium oxide (91nm). The glass substrate with a surface roughness of less than 1nm is cleaned and blown dry with nitrogen after cleaning; PVDF-HFP film is prepared on the glass substrate by scraping with a thickness of 300μm and a scraping speed of 20mm / s, and annealed (80℃, 5min); after the substrate is completed, the PVDF-HFP film is low-temperature sputtered with ITO film; after the transparent conductive cathode ITO is completed, PTAA was spin-coated on the ITO surface (4000 rpm, 30 seconds, 20 nm) and baked at 100°C for 10 minutes. A CsI·FAPbI3·MAPbBr3 perovskite (5:83:17, 1.5 mol / L, 80% N,N-dimethylformamide, 20% dimethyl sulfoxide) active layer was spin-coated on the hole transport layer (5000 rpm, 50 seconds, followed by the addition of the anti-solvent chlorobenzene for 45 seconds) and annealed at 100°C for 10 minutes. Electron transport layers C60 (30 nm) and BCP (7 nm) were evaporated on the active layer. Furthermore, a Cu metal anode (80 nm) was evaporated on the electron transport layer. The test was performed under standard test conditions: AM1.5, 100 mW / cm 2 , the open circuit voltage of the device is measured (V OC ) is 1.04V, the short-circuit current (J SC ) is 17.37 mA / cm 2 , the fill factor (FF) is 0.68, and the photoelectric conversion efficiency (PCE) is 12.28%. At vertical incidence, the reflection band color is 510nm, and the reflection peak is greater than 30%, providing sufficient brightness for color display, while the average transmittance of the remaining energy is as high as 91.5%, providing efficient transmission energy for photoelectric conversion efficiency. Its color display distribution is similar to CIE1931 chromaticity. Figure 5 As shown in , at 0-50° incidence, the color coordinates are distributed in 0.22≤x≤0.26, 0.28≤y≤0.35, and the angular characteristics are excellent.

[0038] Example 5:

[0039] The magnetron sputtering process is used to sputter the bottom optical color layer to reflect red. The specific film system is substrate | hafnium oxide (117nm) | titanium oxide (89nm) | hafnium oxide (202nm) | titanium oxide (184nm) | hafnium oxide (206nm) | titanium oxide (122nm) | hafnium oxide (75nm). The glass substrate with a surface roughness of less than 1nm is cleaned and blown dry with nitrogen after cleaning; PVDF-HFP film is prepared on the glass substrate by scraping with a thickness of 300μm and a scraping speed of 20mm / s, and annealed (80℃, 5min); after the substrate is completed, the PVDF-HFP film is low-temperature sputtered with ITO film; after the transparent conductive cathode ITO is completed, PTAA was spin-coated on the ITO surface (4000 rpm, 30 seconds, 20 nm) and baked at 100°C for 10 minutes. A CsI·FAPbI3·MAPbBr3 perovskite (5:83:17, 1.5 mol / L, 80% N,N-dimethylformamide, 20% dimethyl sulfoxide) active layer was spin-coated on the hole transport layer (5000 rpm, 50 seconds, followed by the addition of the anti-solvent chlorobenzene for 45 seconds) and annealed at 100°C for 10 minutes. Electron transport layers C60 (30 nm) and BCP (7 nm) were evaporated on the active layer. Furthermore, a Cu metal anode (80 nm) was evaporated on the electron transport layer. The test was performed under standard test conditions: AM1.5, 100 mW / cm 2 , the open circuit voltage of the device is measured (V OC ) is 1.03V, the short-circuit current (J SC ) is 16.62 mA / cm 2 , the fill factor (FF) is 0.71, and the photoelectric conversion efficiency (PCE) is 12.15%. At vertical incidence, the reflection band color is 550nm, and the reflection peak is greater than 40%, providing sufficient brightness for color display, while the average transmittance of the remaining energy is as high as 90.7%, providing efficient transmission energy for photoelectric conversion efficiency. Its color display distribution is similar to CIE1931 chromaticity. Figure 6 As shown in , at 0-50° incidence, the color coordinates are distributed in 0.27≤x≤0.33, 0.48≤y≤0.51, and the angular characteristics are excellent.

[0040] Example 6:

[0041] The magnetron sputtering process is used to sputter the bottom optical color layer to reflect red. The specific film system is substrate | titanium oxide (17nm) | hafnium oxide (130nm) | titanium oxide (72nm) | hafnium oxide (27nm) | titanium oxide (27nm) | hafnium oxide (83nm). A glass substrate with a surface roughness of less than 1 nm was cleaned and dried with nitrogen. A PVDF-HFP film was prepared on the glass substrate by doctor blading with a thickness of 300 μm and a speed of 20 mm / s, and then annealed (80°C, 5 min). After the substrate was completed, an ITO film was low-temperature sputtered on the PVDF-HFP film. After the transparent conductive cathode ITO was completed, PTAA was spin-coated on the ITO surface (4000 rpm, 30 s, 20 nm), and the formed film was baked (100°C, 10 min). A CsI·FAPbI3·MAPbBr3 perovskite (5:83:17, 1.5 mol / L, 80% N,N-dimethylformamide, 20% dimethyl sulfoxide) active layer was prepared by spin coating on the hole transport layer (5000 rpm, 50 s, 45 The anti-solvent chlorobenzene was added and annealed (100°C, 10 min). Electron transport layers C60 (30 nm) and BCP (7 nm) were evaporated on the active layer. A metal anode Cu (80 nm) was also evaporated on the electron transport layer. Under standard test conditions: AM1.5, 100 mW / cm 2 , the open circuit voltage of the device is measured (V OC ) is 1.02 V, the short-circuit current (J SC ) is 15.88 mA / cm 2 , the fill factor (FF) is 0.69, and the photoelectric conversion efficiency (PCE) is 11.17%. When the incident light is vertical, the reflection band color is 590nm, and the reflection peak is greater than 25%, which provides sufficient brightness for color display, while the average transmittance of the remaining energy is as high as 89.8%, providing efficient transmission energy for photoelectric conversion efficiency. Its color display distribution is as CIE1931 chromaticity. Figure 7 As shown in , at 0-50° incidence, the color coordinates are distributed in 0.38≤x≤0.45, 0.42≤y≤0.48, and the angular characteristics are excellent.

[0042] The present invention has been described through the above-described embodiments. However, it should be understood that the above-described embodiments are for illustrative and illustrative purposes only and are not intended to limit the present invention to the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the above-described embodiments and that various variations and modifications may be made based on the teachings of the present invention, all of which fall within the scope of the present invention. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A color solar cell with constant color under wide-angle incidence, comprising, from bottom to top, a bottom optical color layer, a bottom semi-transparent electrode, a bottom charge transport layer, a light absorption layer, a top charge transport layer, a top semi-transparent electrode, and a top transparent encapsulation layer, characterized by: The bottom optical color layer is a filter film system that does not change color at wide angles of incidence; the filter film system is formed by stacking two dielectric materials with a refractive index difference Δn≥0.4; Using the thin film transfer matrix method and CIE colorimetry theory, the bottom optical color layer is optimized by combining the film reflection spectrum requirements and color coordinate requirements at multiple angles. The film design is mainly based on the target spectrum curve and color coordinates as the comprehensive evaluation function, that is, F=a×Σ(R(λ)-R0(λ)) 2 +b×((x-x0) 2 +(y-y0) 2 ), where R(λ) and R0(λ) are the designed reflectance spectrum and the ideal target spectrum, respectively; (x, y) and (x0, y0) are the color coordinates corresponding to the designed reflectance spectrum and the ideal target spectrum, respectively; a and b are the weights of the two items, respectively. According to the spectral response results of different colors, the corresponding weight values are adjusted to obtain the optimal result, satisfying |x-x0|≤0.7, |y-y0|≤0.

7.

2. The color solar cell with constant color under wide angle of incidence according to claim 1, characterized in that: The first dielectric material has a refractive index of n≥1.8 and is selected from zirconium oxide, zinc oxide, hafnium oxide, tantalum oxide, silicon nitride, or a combination thereof; The refractive index of the second dielectric material is n≥2.3, and the second dielectric material is selected from titanium oxide, zinc sulfide, silicon, and a combination thereof.

3. The color solar cell with constant color under wide angle of incidence according to claim 1, characterized in that: The thickness of each layer in the filter film system is 30-150 nm, and the total number of layers is 4-20.

4. The color solar cell with constant color under wide angle of incidence according to claim 1, characterized in that: The bottom optical color layer and the bottom semi-transparent electrode can be combined into one layer, that is, ITO material as a higher refractive index material is stacked with a higher refractive index material to form a filter film structure with conductive function. The higher refractive index film layer is controlled below 60 nm, and the total number of layers is 4-8 layers.

5. The color solar cell with constant color under wide angle of incidence according to claim 1, characterized in that: The semi-transparent electrode material is ITO or metal nanowire or metal / dielectric / metal sandwich structure.

6. The color solar cell with constant color under wide angle of incidence according to claim 1, characterized in that: The light absorbing layer has a thickness of 50 nm to 1000 nm.

7. The color solar cell with constant color under wide angle of incidence according to claim 1, characterized in that: Depending on the structure of the solar cell device, the bottom charge transport layer and the top charge transport layer can be hole and electron transport layers respectively, or a combination of electron and hole transport layers, with a layer thickness of 1 nm ~ 300 nm.

8. The color solar cell with constant color under wide angle of incidence according to claim 7, characterized in that: The hole transport layer is one or more of PTAA, PEDOT:PSS, F4-TCNQ, 2-PACZ or metal oxide; the electron transport layer material is one or more of TPBi, C60, BCP, PC60BM, Bphen, Alq3 or ZnO.

9. The color solar cell with constant color under wide angle of incidence according to claim 1, characterized in that: The light absorption layer material includes one or more perovskite materials and organic materials, wherein the perovskite material adopts an ABX3 structure, A is Cs + 、HN=CHNH3 + 、CH3NH3 + , Rb + 、Na + , K + or a combination thereof; B is Sn 2+ , Pb 2+ or a combination thereof; X is a halogen anion, O 2- 、S 2- or a combination thereof.

10. The color solar cell with constant color under wide angle of incidence according to claim 1, characterized in that: The encapsulation material of the transparent encapsulation layer is a heat-curing sealing resin, which is one or more of PDMS, PMMA, PVA, PI, or a transparent UV-curing resin, with a layer thickness of 100 nm to 100 mm.

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