Light-emitting device

Abstract

The present invention discloses a light-emitting device, comprising a carrier substrate, a light-emitting unit disposed on the carrier substrate, a reflective element disposed on the light-emitting unit, and an optical element located on the carrier substrate and surrounding the light-emitting unit.

Description

[0001] This application is a divisional application of a Chinese invention patent application (Application No.: 201811258011.4, Application Date: October 26, 2018, Invention Title: Light-Emitting Device). Technical Field

[0002] The present invention relates to a light-emitting device, and in particular to a light-emitting device including a reflective layer and an optical element. Background Art

[0003] Light-Emitting Diodes (LEDs) used in solid-state lighting devices have characteristics such as low power consumption, long lifespan, small size, fast response speed, and stable output light wavelength. Therefore, LEDs are gradually replacing traditional light sources. With the development of optoelectronic technology, solid-state lighting has made significant progress in terms of lighting efficiency, operating lifespan, and brightness. In recent years, LEDs have been applied to various uses, such as in the backlight module of a display. Summary of the Invention

[0004] The present invention relates to a light-emitting device, including a carrier board, a light-emitting unit disposed on the carrier board, a first optical element disposed directly above the light-emitting unit for reflecting light from the light-emitting unit to the side of the light-emitting unit, and a second optical element located on the carrier board and surrounding the light-emitting unit.

[0005] To make the above and other objects, features, and advantages of the present invention more obvious and understandable, specific embodiments are hereinafter given and described in detail in conjunction with the accompanying drawings as follows. Brief Description of the Drawings

[0006] Figure 1A Is a cross-sectional schematic view of a light-emitting device in an embodiment of the present invention;

[0007] Figure 1B Is a top view of a light-emitting device in an embodiment of the present invention;

[0008] Figure 2A Is a cross-sectional schematic view of a light-emitting device in an embodiment of the present invention;

[0009] Figure 2B Is Figure 2A The top view of the device in;

[0010] Figure 2C Is Figure 2A The light intensity distribution diagram of the device in;

[0011] Figure 2D Is Figure 2A The light intensity distribution diagram of the device in;

[0012] Figure 3ASchematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0013] Figure 3B is Figure 3A the top view of the device in;

[0014] Figure 3C is Figure 3A the light intensity distribution diagram of the device in;

[0015] Figure 3D is Figure 3A the light intensity distribution diagram of the device in;

[0016] Figure 4A Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0017] Figure 4B is Figure 4A the top view of the device in;

[0018] Figure 4C is Figure 4A the light intensity distribution diagram of the device in;

[0019] Figure 4D is Figure 4A the light intensity distribution diagram of the device in;

[0020] Figure 5 Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0021] Fig. 6A Schematic cross-sectional view of a light-emitting unit according to an embodiment of the present invention;

[0022] Figure 6B Schematic cross-sectional view of a light-emitting unit according to an embodiment of the present invention;

[0023] Figure 7 Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0024] Figure 8 Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0025] Fig.9A Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0026] Fig. 9B is Fig.9A the top view of the device in;

[0027] Fig. 9C is Fig.9A the light intensity distribution diagram of the device in;

[0028] Fig.9D is Fig.9A Light intensity distribution diagram of the device in

[0029] Fig.9E Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0030] Fig. 10A Top view of a light-emitting device according to an embodiment of the present invention;

[0031] Fig. 10B is Fig. 10A Schematic cross-sectional view of the device in

[0032] Fig.11A Top view of a light-emitting device according to an embodiment of the present invention;

[0033] Fig. 11B is Fig.11A Schematic cross-sectional view of the device in

[0034] Fig. 11C Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0035] Fig.11D Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0036] Fig.11E Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0037] Fig. 12A Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0038] Fig. 12B is Fig. 12A Top view of the device in

[0039] Fig. 12C is Fig. 12A Light intensity distribution diagram of the device in

[0040] Fig.12D is Fig. 12A Light intensity distribution diagram of the device in

[0041] Fig.12E Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0042] Fig.13A Top view of a light-emitting device according to an embodiment of the present invention;

[0043] Fig. 13B is Fig.13A Schematic cross-sectional view of the device in

[0044] Fig.14A Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;

[0045] Fig. 14B The upper view of the light-emitting device in Fig.14A ;

[0046] Fig. 14C The lower view of the optical element in Fig.14A ;

[0047] Fig.14D1 The lower view of an optical element in an embodiment of the present invention;

[0048] Fig.14D2 The schematic cross-sectional view of the optical element in Fig.14D1 ;

[0049] Fig.14E The cross-sectional view of an optical element in an embodiment of the present invention;

[0050] Figure 14F1 to Figure 14F3 The cross-sectional view of an optical element in an embodiment of the present invention;

[0051] Figure 14G The light intensity distribution diagram of the device in Fig.14A ;

[0052] Fig.15A The upper view of a light-emitting device in an embodiment of the present invention;

[0053] Fig. 15B The schematic cross-sectional view of the device in Fig.15A ;

[0054] Fig.16A The schematic cross-sectional view of a light-emitting device in an embodiment of the present invention;

[0055] Fig. 16B The upper view of the light-emitting device in Fig.16A ;

[0056] Fig. 16C The upper view of the light-emitting device of another embodiment of the present invention.

[0057] Symbol description

[0058] 10, 10a, 10b: Light-emitting unit;

[0059] 12: Wavelength conversion structure;

[0060] 20, 200: Carrier board;

[0061] 30: First optical element;

[0062] 50: Second optical element;

[0063] 52: Third optical element;

[0064] 54: Fourth optical element;

[0065] 56: Fifth optical element;

[0066] 58: Sixth optical element;

[0067] 59: Seventh optical element;

[0068] 101: Light-emitting structure;

[0069] 1011, 1012: Side surfaces;

[0070] 102, 104, 106, 108: Electrodes;

[0071] 1018, 1019: Electrode pads;

[0072] 15: Insulating structure;

[0073] 1501, 1502, 1503: Parts;

[0074] 105: Light-transmitting layer;

[0075] 1051: Phosphor particles;

[0076] 1052: Matrix;

[0077] 201, 202, 501, 502, 503, 561, 562, 563, 5010, 580, 583, 584, 590, 593: Surfaces;

[0078] 581, 591: Inclined surfaces;

[0079] 582, 592: Bottom surfaces;

[0080] 5840: Ridge line;

[0081] 5930: Depression;

[0082] 300, 301, 302, 203, 203a1, 203a2, 203b1, 203b2, 203c1, 203c2, 203d1, 203d2, 204, 2041, 2042: Circuit layers;

[0083] 40: Surface layer;

[0084] 1000, 1000’, 2000, 3000, 4000, 5000, 5002, 6000, 7000, 7000’, 8000, 8000’, 8002, 9000, 9000’: Light-emitting devices;

[0085] L0: Center line;

[0086] L1: Light ray;

[0087] C10, C20, C30: Endpoints;

[0088] C1, C2, C3: Tangents;

[0089] AA’, BB’: Lines;

[0090] θ, θ1, θ2, θ3: Included angles. Detailed implementation manners

[0091] The following embodiments will illustrate the concept of the present invention in conjunction with the accompanying drawings. In the drawings or the description, similar or identical parts are denoted by the same reference numerals, and in the drawings, the shape or thickness of the elements may be enlarged or reduced.

[0092] Figure 1A A cross-sectional schematic diagram showing the light-emitting device of the present invention is shown. In Figure 1A it, the X-axis and the Z-axis are set to intersect generally at the geometric center of the light-emitting unit 10. Looking Figure 1A at it, the Z-axis passes through the geometric center of the light-emitting unit 10 (i.e., the position of the virtual center line L0), and the X-axis passes through the geometric center of the light-emitting unit 10 in the horizontal direction. The light-emitting device 1000 includes a carrier plate 20, a light-emitting unit 10, a first optical element 30, and a second optical element 50. The light-emitting unit 10 includes a light-emitting structure 101, a light-transmitting layer 105 that surrounds and covers the light-emitting structure 101, and electrodes 102, 104. The light-emitting structure 101 includes a substrate (not shown), a first-type semiconductor layer (not shown), an active layer (not shown), and a second-type semiconductor layer (not shown). The substrate can be a crystal growth substrate, such as sapphire, silicon carbide, gallium nitride, or gallium arsenide, suitable for epitaxial growth of the first-type semiconductor layer, the active layer, and the second-type semiconductor layer. The substrate can also be a material not used for epitaxial growth, such as a hard substrate like ceramic, or an elastic substrate like glass fiber or benzotriazole resin (BT). The substrate can be thinned or removed during the manufacturing process. The first-type semiconductor layer and the second-type semiconductor layer are, for example, cladding layers or confinement layers, which can respectively provide electrons and holes to enable the combination of electrons and holes in the active layer to emit light. The first-type semiconductor layer, the active layer, and the second-type semiconductor layer can include III-V group semiconductor materials, such as Al x In y Ga (1-x-y) N or Al x In y Ga (1-x-y)P, where 0 ≤ x, y ≤ 1; (x + y) ≤ 1. Depending on the material of the active layer, the light-emitting structure 101 can emit red light with a peak wavelength between 610 nm and 650 nm, green light with a peak wavelength between 530 nm and 570 nm, or blue light with a peak wavelength between 450 nm and 490 nm. The light-transmitting layer 105 can selectively include wavelength-converting materials, such as dyes, phosphors, and quantum dot materials. If a phosphor is selected as the wavelength-converting material, some adjacent phosphor particles are in contact with each other, while some adjacent phosphor particles are not in contact with each other. The particle size (maximum or average particle size) of the phosphor is between 5 μm and 100 μm. The phosphor includes but is not limited to yellow-green phosphors and red phosphors. The composition of the yellow-green phosphor is, for example, aluminum oxide (YAG or TAG), silicate, vanadate, alkaline earth metal selenide, or metal nitride. The composition of the red phosphor is, for example, silicate, vanadate, alkaline earth metal sulfide, metal oxynitride, or tungsten molybdate group mixture.

[0093] In one embodiment, the light-transmitting layer 105 includes a phosphor, which can absorb the first light emitted by the light-emitting structure 101 and convert it into a second light with a peak wavelength different from that of the first light. The mixing of the first light and the second light can produce white light. The light-emitting device 1000 has a white light color temperature of 2200 K to 6500 K (for example: 2200 K, 2400 K, 2700 K, 3000 K, 5700 K, 6500 K) under thermal steady state, its color point value (CIE x, y) falls within the range of seven MacAdam ellipses, and has a color rendering index (CRI) greater than 80 or greater than 90. In another embodiment, the light-transmitting layer 105 further includes diffusing particles, and the diffusing particles are, for example, titanium dioxide, zirconium oxide, zinc oxide, or aluminum oxide.

[0094] The light-emitting unit 10 can be electrically connected to a circuit (not shown) on the surface of the carrier plate 20 through the electrodes 102 and 104, and the light-emitting structure 101 is powered through the circuit of the carrier plate 20. More specifically, the electrodes 102 and 104 are connected to the circuit on the surface of the carrier plate 20 through a conductive material, which can be solder or other sticky materials with conductive properties. In one embodiment, the lower surface 202 of the carrier plate 20 further includes electrodes 106 and 108 to receive external power. The electrodes 106 and 108 located on the lower surface are electrically connected to the circuit (not shown) on the surface of the carrier plate 20 through metal lines (not shown) inside the carrier plate 20, and the metal lines can pass through the carrier plate 20 vertically or obliquely inside the carrier plate 20. In one embodiment, the upper surface 201 of the carrier plate 20 further includes a reflective layer to reflect the light emitted by the light-emitting unit 10. The reflective layer can be a diffused surface (the light may travel in multiple directions after being reflected), or the reflective layer is a mirror surface (the light travels in a single direction after being reflected, that is, the angle of incidence is equal to the angle of reflection). When the reflective layer is a diffused surface, part of the light emitted by the light-emitting structure 101 is reflected towards the light-emitting structure 101 after hitting the carrier plate 20. At this time, part of the light may be reabsorbed by the light-emitting unit 10, or reflected back and forth between the first optical element 30 and the carrier plate 20 and be trapped in the light-emitting device 1000, thereby reducing the light-emitting intensity of the light-emitting device 1000. When the reflective layer is a mirror surface, the light emitted by the light-emitting structure 101 is reflected outwards and travels away from the light-emitting structure 101 after hitting the surface of the carrier plate 20. Therefore, when the upper surface 201 of the carrier plate 20 includes a specular reflection surface, compared with when the upper surface 201 includes a diffused reflection surface, more light will be reflected to the surroundings of the light-emitting device 1000, thereby increasing the light intensity around the light-emitting device 1000 and making the difference between the light intensity around the light-emitting device 1000 and the light intensity at the center greater.

[0095] The material of the reflective layer includes an insulating material, such as white paint or ceramic ink, and / or a conductive material, such as metals like silver and aluminum. The white paint includes a base material and a plurality of reflective particles (not shown in the figure) dispersed in the base material. The base material includes a material containing a siloxane group, a material containing an epoxy group, or a material having both of the aforementioned functional groups, and has a refractive index (n) between approximately 1.4 to 1.6 or 1.5 to 1.6. In one embodiment, the base material may include polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer. The reflective particles include titanium dioxide, silicon dioxide, aluminum oxide, zinc oxide, or zirconium dioxide.

[0096] In one embodiment, the first optical element 30 is disposed above the light-emitting unit 10. The width of the first optical element 30 is substantially equal to the width of the light-emitting unit 10 and is greater than the width of the light-emitting structure 101. Refer to Figure 1A, the first optical element 30 is used to reflect at least part of the light of the light-emitting structure 101 so that it emits out of the light-emitting unit 10 towards the lower right ((X, -Z) direction) and / or the lower left ((-X, -Z) direction), so that the light can be emitted towards the second optical element 50 after leaving the light-emitting structure 101, avoiding the light being trapped within the light-emitting unit 10. Therefore, the first optical element 30 can disperse the light generated by the light-emitting unit 10 around the light-emitting device 1000 instead of concentrating above the light-emitting device 1000. The second optical element 50 surrounds the light-emitting unit 10 and the first optical element 30, and simultaneously contacts the first optical element 30 and the light-emitting unit 10. The second optical element 50 more or less symmetrically covers the light-emitting unit 10 in a cross-sectional view with respect to a center line passing through the light-emitting unit 10 (or the first optical element 20), such as a virtual center line L0 passing through the center of the light-emitting unit 10. The second optical element 50 has an upper surface 501 and a lower surface 502. The upper surface 501 is directly connected to the side surface of the first optical element 30 but does not contact the uppermost surface of the first optical element 30. The lower surface 502 is connected to the carrier plate 20 and the lower surface 502 is substantially coplanar with the surfaces of the electrodes 102 and 104 connected to the carrier plate 20. In one embodiment, the cross-sectional shape of the second optical element 50 is rectangular or approximately rectangular, and its upper surface 501 is a horizontal plane parallel to the upper surface 201 in the cross-sectional view, and the upper surface 501 is substantially coplanar with the uppermost surface of the first optical element 30. In one embodiment, the upper surface 501 does not directly contact the side surface of the first optical element 30, and there is also a horizontal uppermost surface of the second optical element 50 connecting the upper surface 501 and the side surface of the first optical element 30. The second optical element 50 surrounds the light-emitting unit 10, and the highest point of the upper surface 501 is located above the uppermost surface of the light-emitting unit 10. The first optical element 30 can be a single-layer structure or a multi-layer structure. Among them, the single-layer structure containing insulating materials is, for example, a single-layer reflective layer composed of white paint or ceramic ink. The single-layer structure containing conductive materials is, for example, a single-layer reflective layer composed of metal, and the metal can be metals such as silver and aluminum. The first optical element 30 can be a distributed Bragg reflector (DBR). The Bragg mirror is composed of at least two or more transparent materials with different refractive indices stacked together.The Bragg reflection structure can be an insulating material or a conductive material. The insulating materials include but are not limited to polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), magnesium oxide (MgO), Su8, epoxy resin, acrylic resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, glass, aluminum oxide (Al2O3), magnesium oxide (MgO), silicon oxide (SiO x ), titanium oxide (TiO2), tantalum pentoxide (Ta2O5), silicon nitride (SiN x ), spin-on glass (SOG) or tetraethyl orthosilicate (TEOS). The conductive materials include but are not limited to indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium zinc oxide (GZO), zinc oxide (ZnO), magnesium oxide (MgO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP) or indium zinc oxide (IZO).

[0097] The second optical element 50 and the light-transmitting layer 105 can be penetrated by the light from the light-emitting structure 101. The materials of the second optical element 50 and the light-transmitting layer 105 can be the same or similar, and the materials include silicone, epoxy resin, polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), SU8, acrylic resin, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, aluminum oxide (Al2O3), SINR, spin-on glass (SOG). In one embodiment, the second optical element 50 includes diffusing particles, such as titanium dioxide, zirconium oxide, zinc oxide or aluminum oxide. In one embodiment, the second optical element 50 includes wavelength conversion materials, such as dyes, phosphors, quantum dot materials (QD; Quantum Dot).

[0098] Figure 1B The upper view of the light-emitting device 1000 of the present invention is shown. In Figure 1B , the X-axis and the Y-axis are set to intersect generally at the geometric center of the light-emitting unit 10. In Figure 1BAs shown, the Y-axis vertically passes through the geometric center of the light-emitting unit 10, and the X-axis horizontally passes through the geometric center of the light-emitting unit 10. From Figure 1B the perspective view, the light-emitting unit 10 is completely covered by the first optical element 30, and the second optical element 50 surrounds the entire light-emitting unit 10 and the first optical element 30. The second optical element 50 has a generally circular or elliptical contour. There is a proportional relationship between the size of the light-emitting unit 10 and the size of the second optical element 50 or the reflective layer on the carrier plate 20 or the upper surface 201 in the same cross-section. For example, in Figure 1A it, the maximum width of the second optical element 50 is 3 times or more the maximum width of the light-emitting unit 10, or the maximum width of the reflective layer on the carrier plate 20 / upper surface 201 is 3 times or more the maximum width of the light-emitting unit 10. In one embodiment, the maximum width of the second optical element 50 is 5 times or more the maximum width of the light-emitting unit 10. In one embodiment, the maximum width of the reflective layer on the carrier plate 20 / upper surface 201 is 10 times or more the maximum width of the light-emitting unit 10.

[0099] Figure 2A FIG. is a cross-sectional schematic view of a light-emitting device according to an embodiment of the present invention, wherein the rays represent the trajectories of the light emitted by the light-emitting device. Figure 2B is Figure 2A the top view of the device in Figure 2A In it, the X-axis and the Z-axis are set to intersect generally at the geometric center of the light-emitting unit 10. From Figure 2A the perspective view, the Z-axis passes through the center of the light-emitting unit 10 (i.e., the virtual center line L0), and the X-axis horizontally passes through the geometric center of the light-emitting unit 10. The portion of the second optical element 50 located on one side of the light-emitting unit 10 has a trapezoid-like shape, wherein the upper surface 501 of the second optical element 50 is an inclined surface. The upper surface 201 of the carrier plate 20 can be a mirror or a quasi-mirror reflective surface for dispersing the light emitted by the light-emitting unit 10 to both sides of the light-emitting device 1000. For the convenience of description, Figure 2A in the left half of the light-emitting device 1000 shown in it, it shows the situation where the light travels upward in the second optical element 50 after leaving the light-emitting unit 10, and the right half shows the situation where the light travels downward in the second optical element 50 after leaving the light-emitting unit 10. The light traveling mode in the second optical element 50 at least includes the aforementioned upward and downward paths, and can also be various combinations of these two paths, and all generally travel in a direction away from the light-emitting unit 10. As Figure 2A shown, the light travels linearly in the second optical element 50 until refraction occurs on the upper surface 501. For example, the light ray L1 deflects toward the direction close to the carrier plate 20 after leaving the second optical element 50.

[0100] Figure 2B is Figure 2AUpper view of the device in Figure 2C For Figure 2A Rectangular coordinate light pattern diagram of the light-emitting device 1000 in Figure 2B Shown, the three curves in the figure are the light intensities measured from planes in three different orientations (such as Figure 2C Plane A (90°), Plane B (135°) and Plane C (180°) shown). Figure 2C In the figure, the horizontal axis represents the observation angle on a plane (Plane A, Plane B or Plane C), and the vertical axis represents the relative light intensity (a.u.). From Figure 2D It can be seen that the light intensity distribution of the light-emitting device 1000 is generally symmetric with respect to the 0° angle, with the highest light intensity (about 0.14 a.u.) on both sides at about 40° - 70°, which is about 14 times the lowest light intensity (about 0.01 a.u.) between +15° and -15° in the central region. For the convenience of comparison, the present invention normalizes the light intensity, so the light intensity unit in each embodiment is unified to an arbitrary unit (a.u.). Figure 2A For Figure 2D Polar coordinate light pattern diagram of the device in

[0101] Figure 3A Schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention, where the rays represent the trajectories of the light emitted by the light-emitting device. Figure 3B For Figure 3A Upper view of the device in Figure 3A In Figure 3A The X-axis and the Z-axis are set to intersect substantially at the geometric center of the light-emitting unit 10. From Figure 3A It can be seen that the Z-axis passes through the center of the light-emitting unit 10 (i.e., the virtual center line L0), and the X-axis horizontally passes through the geometric center of the light-emitting unit 10. The cross-sectional view of the second optical element 50 is generally two trapezoids arranged on both sides of the light-emitting unit 10, and the upper surfaces 501 on both sides of the second optical element are concave surfaces. The upper surface 201 of the carrier plate 20 is a specular reflection surface, thereby guiding the light emitted by the light-emitting unit 10 to both sides of the light-emitting device 2000. Figure 3C For Figure 3A Rectangular coordinate optical pattern diagram of the light-emitting device 2000 therein. The three curves shown in the figure are the light intensities measured from planes at three different orientations (such as Figure 3B plane A (90°), plane B (135°), and plane C (180°) as shown). Figure 3C In, the horizontal axis represents the measured angle, and the vertical axis represents the relative light intensity (a.u.). 0°, 90°, and -90° on the horizontal axis are as shown on the coordinate axes in Figure 3A , and the directions of 90° and -90° are approximately Figure 3A the +X and -X directions in, and the position of 0° overlaps with the virtual center line L0 passing through the center of the light-emitting unit 10. Figure 3C In, the horizontal axis represents the observation angle on a plane (plane A, plane B, or plane C), and the vertical axis represents the relative light intensity (a.u.). As can be seen from Figure 3C , the light intensity distribution of the light-emitting device 2000 is approximately symmetric with respect to the 0° angle. It has the highest light intensity (about 0.13 a.u.) on both sides at about 30° to 60°, which is approximately 7.2 times the lowest light intensity (about 0.018 a.u.) in the central region of +10° to -10°. Figure 3D is Figure 3A the polar coordinate optical pattern diagram of the device in. As can be seen from Figure 3D , the light intensity of the light-emitting device 2000 is also approximately symmetric about the geometric center of the light-emitting unit 10 or the 0° angle, and the light is mainly distributed in the range of 30° to 60°. Compared with Figure 2A the light-emitting device 1000 in, the main difference of the light-emitting device 2000 is that the second optical element 50 has a concave upper surface 501, which also affects the optical distribution. Specifically, the position where the highest light intensity of the light-emitting device 2000 is located has moved closer to the geometric center of the light-emitting unit 10 from 40° to 70° (of the light-emitting device 1000) to 30° to 60°, the distribution of the central region with lower light intensity has shrunk from +15° to -15° to +10° to -10°, and the ratio of the maximum light intensity to the minimum light intensity of the light-emitting device 2000 is also lower than that of the light-emitting device 1000.

[0102] Figure 4A is a schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention, where the rays represent the trajectories of the light emitted by the light-emitting device. Figure 4B is Figure 4A the top view of the device in. In Figure 4A , the X-axis and the Z-axis are set to intersect substantially at the geometric center of the light-emitting unit 10. In Figure 4ALooking at it, the Z-axis passes through the center of the light-emitting unit 10 (i.e., the virtual center line L0), and the X-axis horizontally passes through the geometric center of the light-emitting unit 10. The cross-sectional view of the second optical element 50 is roughly two arc trapezoids arranged on both sides of the light-emitting unit 10, and the upper surfaces 501 on both sides of the second optical element are convex surfaces. The surface 201 of the carrier plate 20 is a specular reflection surface, thereby guiding the light emitted by the light-emitting unit 10 to both sides of the light-emitting device 3000. Figure 4A The left half in it shows the situation where the light travels upward, while the right half shows the situation where the light travels downward. The light traveling mode in the second optical element 50 at least includes the aforementioned upward and downward paths, and can also be various combinations of these two paths, and all generally travel in a direction away from the light-emitting unit 10. The light also refracts on the upper surface 501 when leaving the second optical element 50. It should be noted that the second optical element 50 of the light-emitting device 3000 has a convex upper surface 501. Figure 4C For Figure 4A the rectangular coordinate light pattern diagram of the light-emitting device 3000 in, the three curves shown in the figure are the light intensities measured from three different azimuth planes (such as Figure 4B the plane A (90°), plane B (135°) and plane C (180°) shown). Figure 4C In, the horizontal axis represents the measured angle, and the vertical axis represents the relative light intensity (a.u.). 0°, 90° and -90° on the horizontal axis are as shown in the coordinate axis in Figure 4A , and the directions of 90° and -90° are roughly the Figure 4A +X and -X directions in, and the position of 0° overlaps with the virtual center line L0 passing through the center of the light-emitting unit 10. Figure 4C In, the horizontal axis represents the observation angle on a plane (plane A, plane B or plane C), and the vertical axis represents the relative light intensity (a.u.). From Figure 4C observing, the light intensity distribution of the light-emitting device 3000 is roughly symmetric with respect to the 0° angle. It has the highest light intensity (about 0.18 a.u.) at about 40° - 60° on both sides, which is about 18 times the lowest light intensity (about 0.01 a.u.) between +25° and -25° in the central region. Figure 4D For Figure 4A the polar coordinate light pattern diagram of the device in. From Figure 4D observing, the light intensity of the light-emitting device 3000 is also roughly symmetric about the geometric center of the light-emitting unit 10 or the 0° angle, and the light is mainly distributed in the range of 40° - 60°. Compared with Figure 2AIn the light-emitting device 1000, the main difference in the light-emitting device 3000 is that the second optical element 50 has a convex upper surface 501, which also affects the optical distribution. Specifically, the position where the highest light intensity of the light-emitting device 3000 is located is concentrated from 40° to 70° (of the light-emitting device 1000) to 40° to 60°, and the distribution of the central region with lower light intensity expands from +15° to -15° to +25° to -25°. Moreover, the ratio of the maximum light intensity to the minimum light intensity of the light-emitting device 3000 is also higher than that of the light-emitting device 1000. Therefore, the light-emitting device 3000 can provide a better light intensity contrast than the light-emitting device 1000.

[0103] Figure 5A cross-sectional schematic diagram of the light-emitting device 4000 of the present invention is shown. The light-emitting device 4000 includes a carrier substrate 20, a light-emitting unit 10, a first optical element 30, a second optical element 50, and a third optical element 52 disposed on the second optical element 50. The light-emitting unit 10 includes a light-emitting structure 101, a light-transmitting layer 105 surrounding and covering the light-emitting structure 101, and electrodes 102 and 104. The light-emitting structure 101 includes a substrate (not shown), a first-type semiconductor layer (not shown), an active layer (not shown), and a second-type semiconductor layer (not shown). The substrate can be an epitaxial growth substrate, such as sapphire, silicon carbide, gallium nitride, or gallium arsenide, suitable for epitaxially growing the first-type semiconductor layer, the active layer, and the second-type semiconductor layer. The substrate can also be a material not used for epitaxial growth, such as a ceramic hard substrate, or an elastic substrate such as a glass fiber or a benzotriazole resin (BT). The substrate can be thinned or removed during the manufacturing process. Both the second optical element 50 and the third optical element 52 are light-transmitting elements with respect to the light emitted by the light-emitting unit 10. However, the refractive indices of the second optical element 50 and the third optical element 52 are different. For example, the second optical element 50 includes an epoxy resin with a refractive index between 1.5 and 1.6, and the third optical element 52 includes a silicone resin with a refractive index between 1.4 and 1.5. In an embodiment, the second optical element 50 and the third optical element 52 include the same material, such as epoxy resin or silicone resin, but still have different refractive indices. The light emitted by the light-emitting unit 10 first passes through the second optical element 50 with a higher refractive index, and then passes through the third optical element 52 with a lower refractive index, thereby concentrating the light on both sides and maintaining a low brightness in the central region. In the light-emitting device 4000, the light exits the light-emitting unit 10 and sequentially passes through the second optical element 50 and the third optical element 52 before entering the air. In the light-emitting device 4000, the light can first pass through the third optical element 52 with a refractive index between the air and the second optical element 50 before entering the air with a lower refractive index. Therefore, the refractive index difference of the interfaces passed through is lower, and total reflection is less likely to occur, making the light extraction effect of the light-emitting device 4000 possibly better. There is a proportional relationship between the size of the light-emitting unit 10 and the size of the second optical element 50, the third optical element 52, or the carrier substrate 20 or the reflective layer on the upper surface 201 in the same cross-section. For example, in Figure 5 , the maximum width of the second optical element 50 or the third optical element 52 is 3 times or more the maximum width of the light-emitting unit 10, or the maximum width of the reflective layer on the carrier substrate 20 / upper surface 201 is 3 times or more the maximum width of the light-emitting unit 10. In an embodiment, the maximum width of the second optical element 50 or the third optical element 52 is 5 times or more the maximum width of the light-emitting unit 10. In an embodiment, the maximum width of the reflective layer on the carrier substrate 20 / upper surface 201 is 10 times or more the maximum width of the light-emitting unit 10.

[0104] Fig. 6A This is a cross-sectional schematic diagram of a light-emitting unit in an embodiment of the present invention. The light-emitting unit 10a includes a light-emitting structure 101, a first electrode 102, a second electrode 104, a light-transmitting layer 105, and an insulating structure 15. The light-emitting structure 101 includes a substrate (not shown), a first-type semiconductor layer (not shown), an active layer (not shown), and a second-type semiconductor layer (not shown). The substrate can be an epitaxial growth substrate, such as sapphire, silicon carbide, gallium nitride, or gallium arsenide, suitable for epitaxially growing the first-type semiconductor layer, the active layer, and the second-type semiconductor layer. The substrate can also be a material not used for epitaxial growth, such as a hard substrate like a ceramic substrate, or an elastic substrate like a glass fiber or a benzotriazole resin (BT). The substrate can be thinned or removed during the manufacturing process. The light-emitting structure 101 also includes electrode pads 1018 and 1019 disposed on the lower surface, and the upper surface and side surfaces 1101 and 1102 of the light-emitting structure 101 are in contact with the light-transmitting layer 105. The light-transmitting layer 105 includes a matrix 1052 and phosphor particles 1051, and some of the phosphor particles 1051 are in contact with the upper surface and side surfaces 1101 and 1102 of the light-emitting structure 101. The electrode pad 1018 is connected to the first electrode 102, and the electrode pad 1019 is connected to the second electrode 104. Refer to Fig. 6A , the insulating structure 15 near the central region of the light-emitting unit 10a directly contacts the lower surface of the light-emitting structure 101 and part of the surfaces of the electrode pads 1018 and 1019, and is formed between the electrode pads 1018 and 1019 and the corresponding electrodes 102 and 104. The insulating structures 15 near both sides of the light-emitting unit 10a are formed between the light-transmitting layer 105 and the electrodes 102 and 104, and there are also some phosphor particles 1051 near or directly contacting the insulating structures 15 on the surfaces where the light-transmitting layer 105 is in contact with the insulating structures 15 on both sides. Refer to Fig. 6A , the lowermost surface of the insulating structure 15 has an arc-shaped contour, and the electrodes 102 and 104 include a part formed along the contour of the insulating structure 15, so they also have a similar shape.

[0105] The substrate 1052 includes a substrate material of a silicon substrate, a substrate material of an epoxy resin substrate, or both of the foregoing. The refractive index (n) of the substrate 1052 is between about 1.4 and 1.6 or between 1.5 and 1.6. For the description of the phosphor particles 1051, please refer to the foregoing paragraphs and will not be repeated here. The insulating structure 15 is formed by curing a white paint. The white paint includes a substrate material and a plurality of reflective particles (not shown in the figure) dispersed in the substrate material. The substrate material has a silicone-based material of a silicon substrate, an epoxy-based material of an epoxy resin substrate, or both of the foregoing, and has a refractive index (n) between about 1.4 and 1.6 or between 1.5 and 1.6. In one embodiment, the substrate material may include polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer. The reflective particles include titanium dioxide, silicon dioxide, aluminum oxide, zinc oxide, or zirconium dioxide. In one embodiment, when the light emitted by the light-emitting structure 101 hits the insulating structure 15, the light will be reflected. Specifically, the reflection generated in the insulating structure 15 is diffuse reflection.

[0106] The white paint has a viscosity of about 0.5 to 1000 Pa·s (such as 0.5, 1, 2, 10, 30, 100, 500, 1000) and a hardness (shore D) between about 40 and 90. Alternatively, the white paint has a viscosity of about 100 to 10000 Pa·s (such as 100, 300, 500, 1000, 5000, 10000) and a hardness (shore D) between about 30 and 60.

[0107] Figure 6BSchematic cross-sectional view of a light-emitting unit in an embodiment of the present invention. The light-emitting unit 10b includes a light-emitting structure 101, a first electrode 102, a second electrode 104, a light-transmitting layer 105, and an insulating structure 15. The light-emitting structure 101 includes a substrate (not shown), a first-type semiconductor layer (not shown), an active layer (not shown), and a second-type semiconductor layer (not shown). The substrate can be an epitaxial growth substrate, such as sapphire, silicon carbide, gallium nitride, or gallium arsenide, suitable for epitaxially growing the first-type semiconductor layer, the active layer, and the second-type semiconductor layer. The substrate can also be a material not used for epitaxial growth, such as a hard substrate like ceramic, or an elastic substrate like glass fiber or benzotriazole resin (BT). The substrate can be thinned or removed during the manufacturing process. The light-emitting structure 101 further includes electrode pads 1018 and 1019 disposed on the lower surface, and the upper surface and side surfaces 1101 and 1102 of the light-emitting structure 101 are in contact with the light-transmitting layer 105. The light-transmitting layer 105 includes a matrix 1052 and phosphor particles 1051, and some of the phosphor particles 1051 are in contact with the upper surface and side surfaces 1101 and 1102 of the light-emitting structure 101. The electrode pad 1018 is connected to the first electrode 102, and the electrode pad 1019 is connected to the second electrode 104. The insulating structure 15 includes a first portion 1501, a second portion 1502, and a third portion 1503. The first electrode 102 is formed between the first portion 1501 and the second portion 1502, the second electrode 104 is formed between the third portion 1503 and the second portion 1502, and the second portion 1502 is in more direct contact with the lower surface of the light-emitting structure 101. The lowermost surfaces of the first electrode 102 and the second electrode 104 are substantially coplanar with the lowermost surface of the insulating structure 15. In one embodiment, the light-emitting unit 10b omits the first electrode 102 and the second electrode 104, and accordingly, the lowermost surface of the insulating structure 15 is substantially coplanar with the lowermost surfaces of the electrode pads 1018 and 1019. Among them, the matrix 1052, the phosphor particles 1051, and the insulating structure 15 refer to the descriptions in the foregoing paragraphs and will not be elaborated herein.

[0108] In various embodiments of the present invention, the light-emitting unit can be arbitrarily selected without violating the inventive concept of the present invention, such as the light-emitting units 10, 10a, and 10b. That is to say, the light-emitting unit 10 in the foregoing embodiments can be replaced by the light-emitting unit 10a or 10b.

[0109] Figure 7 Schematic cross-sectional view of a light-emitting device showing an embodiment of the present invention. In Figure 7 it, the X-axis and the Z-axis are set to intersect substantially at the geometric center of the light-emitting structure 101. In Figure 7As shown, the Z-axis passes through the center of the light-emitting structure 101 (i.e., the virtual center line L0), and the X-axis horizontally passes through the geometric center of the light-emitting structure 101. The light-emitting device 5000 includes a carrier substrate 20, a light-emitting structure 101, a first optical element 30, a second optical element 50, and electrodes 106 and 108. The light-emitting structure 101 is connected to the circuit on the upper surface 201 of the carrier substrate 20 through electrode pads 1018 and 1019, and then connected to the electrodes 106 and 108 on the lower surface 202 of the carrier substrate 20 through the circuit, and is connected to an external circuit through the electrodes 106 and 108 to receive power and emit light. The light-emitting structure 101 includes a substrate (not shown), a first-type semiconductor layer (not shown), an active layer (not shown), and a second-type semiconductor layer (not shown). The substrate can be a crystal growth substrate, such as sapphire, silicon carbide, gallium nitride, or gallium arsenide, suitable for epitaxial growth of the first-type semiconductor layer, the active layer, and the second-type semiconductor layer. The substrate can also be a material not used for epitaxial growth, such as a hard substrate like ceramic, or an elastic substrate like glass fiber or benzotriazole resin (BT). The substrate can be thinned or removed during the manufacturing process. The light-emitting structure 101 contacts the circuit on the carrier substrate 20 through the electrode pads 1018 and 1019 via a conductive material (such as solder). The light-emitting device 5000 has similar optical characteristics to the light-emitting device 1000. The structural difference between the light-emitting device 5000 and the light-emitting device 1000 is that the light-emitting device 5000 does not include the light-transmitting layer 105. The optical characteristics include luminous intensity, light intensity distribution, color temperature, and emission wavelength. Reference Figure 7, the first optical element 30 is directly formed on the light-emitting structure 101, and the second optical element 50 surrounds and directly contacts the light-emitting structure 101 and the first optical element 30. The width of the first optical element 30 is substantially equal to the width of the light-emitting structure 101. The second optical element 50 surrounds the light-emitting structure 101 and simultaneously contacts the first optical element 30 and the light-emitting structure 101. The second optical element 50 has an upper surface 501 and a lower surface 502. The upper surface 501 directly abuts against the side surface of the first optical element 30 but does not contact the uppermost surface of the first optical element 30. In one embodiment, the upper surface 501 does not directly contact the side surface of the first optical element 30, and the second optical element 50 further has an approximately horizontal uppermost surface 5010 connecting the upper surface 501 and the side surface of the first optical element 30. The second optical element 50 surrounds the light-emitting structure 101, and the highest point of the upper surface 501 is above the uppermost surface of the light-emitting structure 101 but lower than the uppermost surface of the first optical element 30. In one embodiment, the distance between the light-emitting structure 101 and the first optical element 30 in the light-emitting device 5000 is shortened due to direct contact with each other, so that the light emitted by the light-emitting structure 101 in the direction of the first optical element 30 does not have enough space to leave the light-emitting structure 101 and is easily reflected back to the light-emitting structure 101. The light emitted by the light-emitting structure 101 is easily trapped between the light-emitting structure 101 and the first optical element 30 and is not easily guided to the side of the light-emitting structure 101.

[0110] Figure 8 A cross-sectional schematic diagram of a light-emitting device showing an embodiment of the present invention. In Figure 8 , the X-axis and the Z-axis are set to intersect substantially at the geometric center of the light-emitting unit 10. In Figure 8As shown, the Z-axis passes through the center of the light-emitting unit 10 (i.e., the virtual center line L0), and the X-axis horizontally passes through the geometric center of the light-emitting unit 10. The light-emitting device 6000 includes a carrier substrate 20, a light-emitting unit 10, a first optical element 30, and a second optical element 50. The light-emitting unit 10 includes a light-emitting structure 101, a light-transmitting layer 105 that surrounds and covers the light-emitting structure 101, and electrodes 102, 104, 106, 108. The light-emitting structure 101 includes a substrate (not shown), a first-type semiconductor layer (not shown), an active layer (not shown), and a second-type semiconductor layer (not shown). The substrate can be an epitaxial growth substrate, such as sapphire, silicon carbide, gallium nitride, or gallium arsenide, suitable for epitaxially growing the first-type semiconductor layer, the active layer, and the second-type semiconductor layer. The substrate can also be a material not used for epitaxial growth, such as a hard substrate like ceramic, or an elastic substrate like glass fiber or benzotriazole resin (BT). The substrate can be thinned or removed during the manufacturing process. For components with the same name or reference numeral in the light-emitting devices 6000, 1000, 2000, 3000, 4000, please refer to the foregoing description and will not be elaborated herein. Refer to Figure 8 , the upper surface 501 of the second optical element 50 has an arc-shaped profile, and the upper surface 501 is higher than the first optical element 30. Thus, the second optical element 50 of the light-emitting device 6000 substantially completely covers the light-emitting unit 10 and the first optical element 30, and the side walls of the first optical element 30 are also covered by the second optical element 50. However, in some cases, the side walls of the first optical element 30 may still be exposed to the external medium without being covered by the second optical element 50. The upper surface 501 of the second optical element 50 can be in direct contact with the edge or side surface of the first optical element 30 or be at a distance greater than zero from it. In the light-emitting device 6000, an included angle θ is formed at the junction of the upper surface 501 and the lower surface 502 (or the upper surface 201 of the carrier substrate 20). In one embodiment, the included angle θ is less than 90°, for example, 45°. In one embodiment, the included angle θ is greater than 90°, for example, 120°. There is a proportional relationship between the size of the light-emitting unit 10 and the size of the second optical element 50 or the carrier substrate 20 or the reflective layer on the upper surface 201 in the same cross-section. For example, in Figure 8 , the maximum width of the second optical element 50 is 3 times or more the maximum width of the light-emitting unit 10, or the maximum width of the reflective layer on the carrier substrate 20 / upper surface 201 is 3 times or more the maximum width of the light-emitting unit 10. In one embodiment, the maximum width of the second optical element 50 is 5 times or more the maximum width of the light-emitting unit 10. In one embodiment, the maximum width of the reflective layer on the carrier substrate 20 / upper surface 201 is 10 times or more the maximum width of the light-emitting unit 10.

[0111] Fig.9A Schematic cross-sectional view of a light-emitting device showing an embodiment of the present invention. Fig. 9B is a top view of the device in FIG. 9A. In Fig.9A , the X-axis and the Z-axis are set to intersect substantially at the geometric center of the light-emitting structure 101. Looking Fig.9A at it, the Z-axis passes through the center of the light-emitting structure 101 (i.e., the virtual center line L0), and the X-axis horizontally passes through the geometric center of the light-emitting structure 101. The light-emitting device 7000 includes a carrier plate 20, a light-emitting structure 101, a first optical element 30, a second optical element 50, and electrodes 106, 108. The light-emitting structure 101 includes electrode pads 1018, 1019, a substrate (not shown), a first-type semiconductor layer (not shown), an active layer (not shown), and a second-type semiconductor layer (not shown). The substrate can be an epitaxial growth substrate, such as sapphire, silicon carbide, gallium nitride, or gallium arsenide, suitable for epitaxially growing the first-type semiconductor layer, the active layer, and the second-type semiconductor layer. The substrate can also be a material not used for epitaxial growth, such as a hard substrate like ceramic, or an elastic substrate like glass fiber or benzotriazole resin (BT). The substrate can be thinned or removed during the manufacturing process. For components with the same name or label in the light-emitting device 7000 and the light-emitting device 5000, please refer to the foregoing description and will not be elaborated here. Referring to Fig.9A , the upper surface 501 of the second optical element 50 has an arc-shaped contour, and the upper surface 501 is higher than the first optical element 30. Therefore, the second optical element 50 of the light-emitting device 7000 substantially completely covers the light-emitting unit 10 and the first optical element 30, and the side wall of the first optical element 30 is also covered by the second optical element 50. However, in some cases, the outer edge of the first optical element 30 may still be not covered by the second optical element 50 and be exposed to the external medium. The upper surface 501 of the second optical element 50 can be in direct contact with the edge or side surface of the first optical element 30 or be at a distance greater than zero from it. The second optical element 50 covers the side wall of the first optical element 30, and a clip θ is formed at the junction of the upper surface 501 and the lower surface 502 (or at the junction with the upper surface 201 of the carrier plate 20). In one embodiment, the included angle θ is less than 90°, for example, 45°. In one embodiment, the included angle θ is greater than 90°, for example, 120°.

[0112] Fig. 9C is Fig.9A the rectangular coordinate light pattern of the light-emitting device 7000 in Fig. 9B . The three curves shown in the figure are the light intensities measured from three different azimuth planes (such as Fig. 9B the plane A (90°), plane B (135°), and plane C (180°) shown). Fig. 9C In Fig.9AAs shown by the axes, the directions of 90° and -90° are approximately Figure 3A the +X and -X directions in Fig. 9C , and the position of 0° overlaps with the virtual center line L0 passing through the center of the light-emitting structure 101. The horizontal axis in Fig. 9C represents the observation angle on a plane (plane A, plane B, or plane C), and the vertical axis represents the relative light intensity (a.u.). As can be seen from Fig.9D , the light intensity distribution of the light-emitting device 7000 is approximately symmetric with respect to the 0° angle, with the highest light intensity (about 1.2 a.u.) on both sides at approximately 40° - 50°, which is about 4 times the lowest light intensity (about 0.3 a.u.) in the central region between +10° and -10°. Fig.9A is the polar light pattern diagram of the device in Fig.9D . As can be seen from Figure 2A , the light intensity of the light-emitting device 7000 is approximately symmetric about the geometric center of the light-emitting structure 101 or the 0° angle, and the light is mainly distributed in the range of 40° - 50°. Compared with the light-emitting device 1000 in

[0113] , the difference of the light-emitting device 7000 is that the second optical element 50 covers the light-emitting structure 101 and the first optical element 30, and the side wall of the first optical element 30 is also completely covered by the second optical element 50, thus affecting the optical distribution of the light-emitting device 7000. Specifically, the position of the highest light intensity of the light-emitting device 7000 approaches the geometric center of the light-emitting structure 101 from 40° - 70° (of the light-emitting device 1000) and becomes 40° - 50°, the distribution of the central region with lower light intensity shrinks from +15° - 15° to +10° - 10°, and the ratio of the maximum light intensity to the minimum light intensity of the light-emitting device 7000 is also smaller than that of the light-emitting device 1000. Fig.9E In another embodiment, the part of the second optical element 50 located on one side of the light-emitting structure 101 has a trapezoid-like shape, as shown in Fig.9E is a cross-sectional schematic diagram of a light-emitting device according to an embodiment of the present invention, where the upper surface 501 of the second optical element 50 is an inclined surface, and an angle θ less than 90° is formed at the junction of the upper surface 501 and the lower surface 502 (or the upper surface 201 of the carrier plate 20). In one embodiment, the angle θ is 45.

[0114] Fig. 10A shows a top view of the light-emitting device according to an embodiment of the present invention. The plane of this top view is formed by an X-axis and a Y-axis, and the X-axis and the Y-axis intersect at the geometric center of the light-emitting device 8000. As shown in Fig. 10AAs shown, the Y-axis passes through the geometric center of the light-emitting device 8000 in the vertical direction, while the X-axis passes through the geometric center of the light-emitting device 8000 in the horizontal direction. The light-emitting device 8000 includes a carrier plate 200, a plurality of light-emitting devices 1000, and a fourth optical element 54 covering these light-emitting devices (refer to Fig. 10B ). The light-emitting device 1000 includes a carrier plate 20, a light-emitting unit 10, a first optical element 30, a second optical element 50, and electrodes 106, 108 (not shown). The light-emitting unit 10 includes a light-emitting structure 101 (not shown), a light-transmitting layer 105 (not shown) surrounding and covering the light-emitting structure 101, and electrodes 102, 104 (not shown). The light-emitting structure 101 includes a first-type semiconductor layer (not shown), an active layer (not shown), and a second-type semiconductor layer (not shown). For the relevant descriptions of the foregoing elements, please refer to the elements with the same numbers or names in the foregoing paragraphs, and will not be elaborated here. The upper surface 201 of the carrier plate 200 is a specular reflection surface to effectively extract the light emitted by the light-emitting unit 10. These light-emitting devices 1000 are regularly arranged in a rectangular array at a certain interval in the X-direction and Y-direction on the carrier plate 200. The optical characteristics of each light-emitting device 1000, such as luminous intensity, light intensity distribution, color temperature, and emission wavelength, are substantially the same. In other embodiments, the spacing distances between the light-emitting devices can be the same or different, or the spacing in the same direction can increase or decrease in one direction. In other embodiments, the light-emitting device 1000 can also be replaced by other light-emitting devices, such as light-emitting devices 2000, 3000, 4000, 5000, 6000, and 7000.

[0115] Fig. 10B is Fig. 10A a schematic cross-sectional view of the device in Fig. 10B . The plane of this cross-sectional view is formed by an X-axis and a Z-axis, and the X-axis and the Z-axis intersect at the geometric center of the light-emitting device 8000. As shown in Fig. 10B, in the light-emitting device 8000, the light-emitting devices 1000 are arranged at a certain distance in the X direction and the Y direction, and the light-emitting device 1000 has the characteristic that the light intensity on both sides is greater than the light intensity at the center (please refer to the foregoing rectangular coordinate / polar coordinate light pattern diagrams), so that the light-emitting device 8000 can provide a planar light field with high uniformity and fewer bright spots or dark areas. More specifically, the difference between the maximum brightness and the minimum brightness on this planar light field is less than 3% - 10% of the maximum brightness, or there are no dark lines or bright lines that can be easily observed by the naked eye.

[0116] Fig.11A The upper view of the light-emitting device showing an embodiment of the present invention. The plane of this upper view is composed of an X-axis and a Y-axis, and the X-axis and the Y-axis intersect at the geometric center of the light-emitting device 9000. Fig.11A Viewed from, the Y-axis passes through the geometric center of the light-emitting device 9000 in the vertical direction, and the X-axis passes through the geometric center of the light-emitting device 9000 in the horizontal direction. The light-emitting device 9000 includes a carrier 200, a plurality of light-emitting units 10, a plurality of first optical elements 30, a plurality of second optical elements 50, a plurality of circuit layers 301, 302, and a fourth optical element 54 (refer to Fig. 11B ).

[0117] In Fig.11A , these light-emitting units 10 are arranged in an array at regular intervals in the X direction and the Y direction on the carrier 200, and the overall size of the array can conform to the aspect ratio of the display image, for example, 4:3, 3:2, 16:9, 18:9, 1.85:1, 2.39:1. More information can be found in the Aspect ratio (image) entry on Wikipedia. The optical characteristics of each light-emitting unit 10, such as luminous intensity, light intensity distribution, color temperature, and emission wavelength, are preferably substantially the same. However, if the above characteristics of the light-emitting units 10 are unevenly distributed, the visual impact caused by the uneven characteristics of the light-emitting units 10 can also be reduced by arranging the light-emitting units 10 randomly in the whole area or part of the area. In other embodiments, the spacing distances between the light-emitting units 10 can be the same or different, or the spacing in the same direction can increase or decrease in one direction. In other embodiments, the light-emitting units 10 can also be replaced with other light-emitting units, such as Fig. 6A the light-emitting unit 10a in Figure 6B and the light-emitting unit 10b in

[0118] Fig. 11B is Fig.11A the cross-sectional schematic diagram of the device in Fig. 11BAs shown, the Z-axis passes through the geometric center of the light-emitting device 9000 in the vertical direction, while the X-axis passes through the geometric center of the light-emitting device 9000 in the horizontal direction. In Fig. 11B In FIG. Fig. 11B , the fourth optical element 54 is disposed above the light-emitting unit 10 and simultaneously covers a plurality of first optical elements 30 and a plurality of second optical elements 50. In one embodiment, the fourth optical element 54 further includes a film sheet of a wavelength conversion material such as phosphor or quantum dot. The light-emitting unit 10 includes a light-emitting structure 101, a light-transmitting layer 105 surrounding and covering the light-emitting structure 101, and electrodes 102 and 104. The light-emitting structure 101 includes a first-type semiconductor layer (not shown), an active layer (not shown), and a second-type semiconductor layer (not shown). For the related descriptions of the foregoing elements, please refer to the elements with the same numbers or names in the relevant paragraphs, and will not be elaborated herein. The carrier board 200 is provided with a circuit layer 300 for electrically connecting to the electrodes 102 and 104 of each light-emitting unit 10. More specifically, the circuit layer 300 includes circuit layers 301 and 302 that are electrically connected to the electrodes 102 and 104 respectively. The surfaces of the circuit layers 301 and 302 in contact with the light-emitting unit 10 are used to reflect or diffuse the light emitted by the light-emitting unit 10, and the surfaces of the circuit layers 301 and 302 in contact with the light-emitting unit 10 include reflective metal materials such as silver, gold, copper, and aluminum, which can not only electrically connect to the light-emitting unit 10 but also reflect the light from the light-emitting unit 10 upward / sideward. The reflection pattern can be specular reflection or diffuse reflection. If the circuit layers 301 and 302 can specularly reflect light, the light emitted by the light-emitting unit 10 can be more effectively dispersed to both sides of the light-emitting device 9000.

[0119] In one embodiment, referring to Fig. 11C FIG. Fig. 11C , a surface layer 40 is further disposed on the carrier board 200 and overlaps all or part of the circuit layer 300, and the surface layer 40 is covered by the fourth optical element 54. Fig. 11CA cross-sectional schematic view of a light-emitting device according to an embodiment of the present invention. The surface layer 40 is provided corresponding to each light-emitting unit 10 for reflecting the light emitted by the light-emitting unit 10. The surface layer 40 can be a diffusing surface (the light may travel in multiple directions after being reflected), or the surface layer 40 is a mirror surface (the light travels in a single direction after being reflected, that is, the angle of incidence is equal to the angle of reflection). The material of the surface layer 40 includes an insulating material, such as white paint or ceramic ink, and / or a conductive material, such as metals like silver and aluminum. For the description of the mirror surface, diffusing surface, and white paint, please refer to the foregoing paragraphs and will not be elaborated here. In order to reflect the light emitted by the light-emitting unit 10, it is particularly preferred that the area of the surface layer 40 is larger than the area of the first optical element 30. Specifically, the projected area of the surface layer 40 on the carrier plate 200 is larger than the projected area of the first optical element 30 on the carrier plate 200. Further, the projected area of the surface layer 40 on the carrier plate 200 is also larger than the projected area of the second optical element 50 on the carrier plate 200. In one embodiment, the projected area of the surface layer 40 is less than or equal to the projected area of the second optical element 50. In one embodiment, the first optical element 10 has a projected area of 125 μm * 225 μm on a surface (for example, on the plane formed by the X-axis and the Y-axis), and the surface layer 40 has a projected area of 1 mm * 1 mm on the same surface. In one embodiment, the projections of the first optical element 30 and the surface layer 40 on the same plane have a ratio of the lengths in the same direction between one-tenth and one-half, such as 0.25, 0.125. More specifically, in one embodiment, the projection of the first optical element 30 on the plane formed by the X-axis and the Y-axis has a side length of 250 μm, and the projection of the surface layer 40 in the same direction has a side length of 1 mm, and the ratio between them is 0.25. If the surface layer 40 is electrically insulating, at least a part of the circuit layers 301, 302 at the electrical connection with the electrodes 102, 104 is not covered by the surface layer 40. The surface layer 40 is formed on the surface of the carrier plate 200 and can selectively extend between the electrodes 102, 104 and the carrier plate 200. In one embodiment, the surface layer 40 is provided on the carrier plate 200 and overlaps with the light-emitting unit 10, the first optical element 30, and the second optical element 50.

[0120] Fig.11D A cross-sectional schematic view of a light-emitting device according to an embodiment of the present invention. Refer to Fig.11D, the light-emitting device 9000’ includes a carrier substrate 200, a plurality of light-emitting units 10, a plurality of first optical elements 30, a plurality of fifth optical elements 56, and a fourth optical element 54. The fourth optical element 54 is disposed above the light-emitting unit 10 and simultaneously covers the plurality of first optical elements 30 and the plurality of fifth optical elements 56. The fifth optical element 56 has an upper surface 561, a lower surface 562, and a side surface 563. The side surface 563 is located between the upper surface 561 and the lower surface 562. The upper surface 561 is slightly higher than the upper surface of the first optical element 30 (for example, the distance between the upper surface 501 and the upper surface of the first optical element 30 is not greater than 1 to 5 times the thickness of the first optical element 30, for example, not greater than 2 times the thickness), or is flush with the upper surface of the first optical element 30. The lower surface 562 is in contact with the carrier substrate 200. In an embodiment, the upper surface 561 and the upper surface of the first optical element 30 are substantially coplanar (or flush). The light-emitting unit 10 includes a light-emitting structure 101, a light-transmitting layer 105 and electrodes 102, 104 that surround and cover the light-emitting structure 101. The light-emitting structure 101 includes a first-type semiconductor layer (not shown), an active layer (not shown), and a second-type semiconductor layer (not shown). The carrier substrate 200 includes a circuit layer 300, and the circuit layer includes circuit layers 301, 302 that are electrically connected to the electrodes 102, 104 respectively. For the relevant descriptions of the foregoing elements, please refer to the elements with the same numbers or names in the foregoing paragraphs, and will not be repeated here. In Fig.11D , each of the fifth optical elements 56 surrounds a light-emitting unit 10, and at least part of the light emitted by the light-emitting unit 10 is reflected (and / or diffused) by the first optical element 30 and then exits the fifth optical element 56 through the upper surface 561 and the side surface 563.

[0121] In an embodiment, referring to Fig.11E , a surface layer 40 is further disposed on the carrier substrate 200 and overlaps with the circuit layer 300. Fig.11E is a cross-sectional schematic diagram of a light-emitting device according to an embodiment of the present invention. The light-emitting device 9000’ includes a surface layer 40 disposed on the carrier substrate 200, and the surface layer 40 overlaps with the fifth optical element 56. In an embodiment, the surface layer 40 includes a part that extends beyond the side surface 563 and is not covered by the fifth optical element 56. The area of the surface layer 40 can also be adjusted according to different requirements, such as being greater than, less than, or equal to the area covered by the fifth optical element 56. For the relevant descriptions of the surface layer 40, please refer to the elements with the same numbers or names in the foregoing paragraphs, and will not be repeated here.

[0122] In the light-emitting devices 9000, 9000’, the light-emitting units 10, the first optical elements 30, the fifth optical elements 56, and the fourth optical element 50 are disposed at a certain distance in the X direction and the Y direction, achieving the effect of dispersing the light emitted by the light-emitting unit 10 to both sides (please refer to Figure 2A and its related paragraphs, as well as the aforementioned rectangular coordinate / polar coordinate light pattern diagrams), so that the light-emitting devices 9000 and 9000' can provide a planar light field with high uniformity and fewer bright or dark spots. More specifically, the difference between the maximum brightness and the minimum brightness on this planar light field is less than 3% - 10% of the maximum brightness, or there are no dark or bright lines that can be easily observed by the naked eye. In other embodiments, the light-emitting devices 9000 and 9000' include the light-emitting units 10a or 10b. In other embodiments, the light-emitting devices 8000, 9000, and 9000' include two or more types of light-emitting units, and the light-emitting units can be the light-emitting units 10, 10, and 10b.

[0123] Fig. 12A is a cross-sectional schematic view of a light-emitting device according to an embodiment of the present invention, where the rays represent the trajectories of the light emitted by the light-emitting device. Fig. 12B is Fig. 12A the top view of the device in. In Fig. 12A , the X-axis and the Z-axis are set to intersect substantially at the geometric center of the light-emitting unit 10. From Fig. 12A viewpoint, the Z-axis passes through the center of the light-emitting unit 10 (i.e., the virtual center line L0), and the X-axis horizontally passes through the geometric center of the light-emitting unit 10. In the light-emitting device 1000', the cross-sectional view of the second optical element 50 is approximately two rectangles arranged on both sides of the light-emitting unit 10. The upper surfaces 501 on both sides of the second optical element 50 are planes substantially parallel to the upper surface 201 of the carrier plate 20, and the upper surface 501 is slightly higher than (for example, the distance between the upper surface 501 and the upper surface of the first optical element 30 is not greater than 1 - 5 times the thickness of the first optical element 30, such as not greater than 2 times the thickness.) or flush with the upper surface of the first optical element 30. The upper surface 201 of the carrier plate 20 is a specular reflection surface, thereby guiding the light emitted by the light-emitting unit 10 to both sides of the light-emitting device 1000'. Fig. 12A also shows the situation where the light advances toward both sides. After being reflected by the upper surface 201 and the first optical element 30, the light leaves the second optical element 50 through the side surface 503. Part of the light will leave the second optical element 50 through the upper surface 501. Fig. 12C is Fig. 12A the rectangular coordinate light pattern diagram of the light-emitting device 1000' in. The three curves shown in the figure are the light intensities measured from three different azimuth planes (such as Fig. 12B the plane A (90°), plane B (135°), and plane C (180°) shown). Fig. 12C The horizontal axis in represents the measured angle, and the vertical axis represents the relative light intensity (a.u.). 0°, 90°, and -90° on the horizontal axis are as shown in the coordinate axes in Fig. 12A , and the directions of 90° and -90° are approximately Fig. 12AThe +X and -X directions therein, and the position of 0° overlaps with the virtual center line L0 passing through the center of the light-emitting unit 10. Fig. 12C The horizontal axis therein represents the observation angle on a plane (plane A, plane B or plane C), and the vertical axis represents the relative light intensity (a.u.). From Fig. 12C Observation shows that the light intensity distribution of the light-emitting device 1000' is generally symmetric with respect to the 0° angle, with the highest light intensity (about 1.1 a.u.) on both sides at about 30° to 50°, which is about 1.8 times the lowest light intensity (about 0.6 a.u.) between +10° and -10° in the central region. Fig.12D is Fig. 12A The polar light pattern diagram of the device in Fig.12D Observation shows that the light intensity of the light-emitting device 1000' is also generally symmetric about the geometric center of the light-emitting unit 10 or the 0° angle, and the light is mainly distributed in the range of 30° to 90°. Compared with Figure 1A the light-emitting device 1000 in

[0124] The light-emitting unit 10 in the light-emitting device 1000' can also be replaced by other light-emitting elements. Refer to Fig.12E , Fig.12E is a schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention. The light-emitting device 1000' includes a carrier plate 20, a light-emitting structure 101, a first optical element 30, a second optical element 50, and electrodes 106 and 108. For the related description of the light-emitting structure 101, please refer to the foregoing paragraphs. In the light-emitting device 1000', the virtual center line L0 passing through the center of the light-emitting structure 101 is perpendicular to the upper surface 501 of the second optical element 50, and there is a plane containing the virtual center line L0 and parallel to the side surface 503 of the second optical element 50. The light-emitting structure 101 is in contact with the first optical element 30 and the second optical element 50. And Fig. 12ACompared with the light-emitting device 1000', the light does not pass through the light-transmitting layer 105 and will not be absorbed by the light-transmitting layer 105. The first optical element 30 can be formed on the light-emitting structure 101 by means of coating, deposition or adhesion. In one embodiment, an adhesive layer is formed between the first optical element 30 and the light-emitting structure 101 to bond the two or enhance the bonding strength therebetween. The cross-sectional view of the second optical element 50 is generally two rectangles disposed on both sides of the light-emitting structure 101, such that the upper surfaces 501 on both sides of the second optical element 50 are planes substantially parallel to the upper surface 201 of the carrier plate 20, and the upper surface 501 is slightly higher than (for example, the distance between the upper surface 501 and the upper surface of the first optical element 30 is not greater than 1 to 5 times the thickness of the first optical element 30, for example, not greater than 2 times the thickness.) or flush with the upper surface of the first optical element 30. The upper surface 201 of the carrier plate 20 is a specular reflection surface, thereby guiding the light emitted by the light-emitting unit 10 to both sides of the light-emitting device 1000'. The light reflected by the first optical element 30 and guided by the second optical element 50 in cooperation with the upper surface 201 to both sides of the light-emitting device 1000' exits the second optical element 50 via the side surfaces 503. Therefore, in the direction of the upper surface 501, the light intensity of the light-emitting device 1000' near the virtual center line L0 is lower than the light intensity far from the virtual center line L0 (for example, the part near the side surface 503). In other words, the light-emitting device 1000' has the characteristic that the light intensity on both sides is greater than the light intensity at the center. It should be noted that the light intensity distribution of the light-emitting device 1000' can be changed by adjusting the physical dimensions, composition and other specification parameters of the above-mentioned elements. For example, by adjusting the specification parameters of the foregoing elements, the light-emitting device 1000' can have a light intensity distribution similar to that of Figure 2C to Figure 2D , Figure 3C to Figure 3D , Figure 4C to Figure 4D , Figure 9C to Figure 9D or FIG. 12C to FIG. 12D shown with high light intensity on both sides and low light intensity at the center.

[0125] In one embodiment, a reflective layer is disposed on the upper surface of the carrier plate 20. This reflective layer can be a specular reflection surface, a diffused surface (the light may travel in multiple directions after being reflected) or a composite reflective layer including a specular reflection surface and a diffused surface. For the related descriptions of the first optical element 30 and the second optical element 50, please refer to the foregoing paragraphs.

[0126] Fig.13A The upper view of the light-emitting device showing an embodiment of the present invention. The light-emitting device 8000' includes a carrier plate 200, a plurality of light-emitting devices 1000' and a fourth optical element 54 covering these light-emitting devices 1000' (refer to Fig. 13B)。For the relevant description of the light-emitting device 1000’, please refer to the foregoing paragraphs and will not be elaborated here. In one embodiment, the upper surface 201 of the carrier plate 200 is a specular reflection surface, which can effectively extract the light emitted by the light-emitting structure 101 and reflect the light in the direction of the fourth optical element 54. These light-emitting devices 1000’ are regularly arranged in a rectangular array at a certain interval in the X direction and the Y direction on the carrier plate 200, and the optical characteristics of each light-emitting device 1000’, such as luminous intensity, light intensity distribution, color temperature, and emission wavelength, are substantially the same. In other embodiments, the spacing distances between the light-emitting devices may be the same or different, or the spacing in the same direction may increase or decrease in one direction. In one embodiment, multiple light-emitting devices 1000’ have different optical characteristics, such as different light colors, light intensities, and / or color temperatures. Similarly, the light-emitting device 1000’ can also be replaced with other light-emitting devices, such as light-emitting devices 1000, 2000, 3000, 4000, 5000, 6000, and 7000.

[0127] Fig. 13B is Fig.13A a schematic cross-sectional view of the device in. The fourth optical element 54 covers multiple light-emitting devices 1000’, and the fourth optical element 54 can adjust the light emitted by these light-emitting devices 1000’. Specifically, the fourth optical element 54 can be a single-layer structure or a multi-layer structure, including a brightness enhancement film, a prism film, a diffusion film, and / or an alignment film to provide optical effects such as adjusting the traveling direction and uniformity of the light. In one embodiment, the fourth optical element 54 includes a film sheet of wavelength conversion materials such as phosphor or quantum dot materials. In the light-emitting device 8000’, the light-emitting devices 1000’ are arranged at a certain distance in the X direction and the Y direction. Since the light-emitting device 1000’ has the characteristic that the light intensity on both sides is greater than the light intensity at the center, the light-emitting device 8000’ can provide a planar light field with high uniformity and fewer bright spots or dark areas. More specifically, the difference between the maximum brightness and the minimum brightness on this planar light field is less than 3% - 10% of the maximum brightness, or there are no dark lines or bright lines that can be easily observed by the naked eye.

[0128] In addition to the individual application of the light-emitting devices described in the foregoing paragraphs (such as light-emitting devices 1000, 2000, 3000...), or the application of combining multiple light-emitting devices into a new device (such as light-emitting devices 8000, 8000’, 9000...), the light-emitting device can also be used in combination with optical elements according to different requirements. Fig.14A shows a schematic cross-sectional view of the light-emitting device according to an embodiment of the present invention. The light-emitting device 5002 is similar to the light-emitting device 5000, and the relevant description can be referred to the foregoing paragraphs and will not be repeated here. In Fig.14A it, the light-emitting device 5002 includes a sixth optical element 58 disposed in Figure 7above the light-emitting device 5000 therein. More specifically, the sixth optical element 58 includes an inner surface that is in contact with the surfaces 201 and 501 of the light-emitting device 5000 and the first optical element 30. And the sixth optical element 58 has substantially the same optical properties as the second optical element 50, such as refractive index. In other embodiments, an adhesive material may also be provided on the light-emitting device 5000 to be in contact with the sixth optical element 58, and the adhesive material may be selectively provided on one side of the first optical element 30, the second optical element 50, and / or the carrier 20 close to the sixth optical element 58. As viewed from Fig.14A view, the sixth optical element 58 is generally a mirror-symmetric structure such that the virtual center line L0 generally passes through the (geometric) centers of the light-emitting structure 101 and the sixth optical element 58 simultaneously. The sixth optical element 58 has a lower surface 580, an inclined surface 581, a bottom surface 582, and an upper surface 583, all of which are generally smooth surfaces, thus reducing the losses caused by scattering, refraction, or total reflection of the light emitted by the light-emitting structure 101 on these surfaces when passing through the optical element 58, as well as the influence of changing the light traveling route. The contour formed by the lower surface 580, the inclined surface 581, and the bottom surface 582 generally conforms to the surface shape of the light-emitting device 5000 in contact therewith, which can reduce the amount of gas between the optical element 58 and the light-emitting device 5000 and also reduce the losses of light between the optical element 58 and the light-emitting device 1000. The minimum width of the lower surface 580 is substantially equal to the width of the light-emitting structure 101 and the first optical element 30, the maximum width of the light-emitting unit 58 is substantially equal to the width of the light-emitting device 5000, and the lower surface 580 is generally parallel to the surface of the first optical element 30. In one embodiment, the lower surface 580 is an inclined surface or a flat surface with depressions and / or protrusions. As shown in the foregoing paragraph, the light emitted by the light-emitting structure 101 is emitted out of the light-emitting device 5000 in the lower right ((X, -Z) direction) and / or lower left ((-X, -Z) direction), so that the light can be directed to the second optical element 50 after leaving the light-emitting structure 101 and the light is dispersed around the light-emitting device 5002 instead of being concentrated directly above. After the sixth optical element 58 is provided, as Fig.14A shown, after the light leaves the second optical element 50, it first passes through the sixth optical element 58 and then enters the air. At this time, by using the different refractive indices of the sixth optical element 58 and the air, the light is evenly dispersed in all directions, and the peak of the light field distribution is shifted in a direction away from the virtual center line L0. For example, referring to Figure 14G , the peak of the light field distribution falls within the range of 70° to 80°. In one embodiment, the sixth optical element 58 is provided above the light-emitting device 5000, and a part of the second optical element 50 is located between the bottom surface 582 and the carrier 20 or extends beyond the sixth optical element 58.

[0129] The material of the sixth optical element 58 may be the same as or similar to that of the second optical element 50. For the description of relevant materials, please refer to the foregoing paragraphs. The sixth optical element 58 may selectively include a wavelength conversion material, such as a dye, a phosphor, or a quantum dot material. If a phosphor is selected as the wavelength conversion material, some adjacent phosphor particles are in contact with each other, while some adjacent phosphor particles are not in contact with each other. The particle size of the phosphor (e.g., the maximum or average particle size in a specific area) is between 5 μm and 100 μm. For the relevant description of the wavelength conversion material or phosphor, please refer to the foregoing paragraphs and will not be repeated here. In another embodiment, the sixth optical element 58 further includes diffusion particles, and the material of the diffusion particles is, for example, titanium dioxide, zirconium oxide, zinc oxide, or aluminum oxide.

[0130] Fig. 14B The upper view of the light-emitting device 5002 of the present invention is shown. In Fig. 14B it, the X-axis and the Y-axis are set to intersect substantially at the geometric center of the light-emitting structure 101. As viewed from Fig. 14B it, the light-emitting structure 101 is completely covered by the first optical element 30, and the sixth optical element 58 surrounds the entire light-emitting structure 101 and the first optical element 30. As viewed from the upper view, the sixth optical element 58 has a generally circular or elliptical contour, and the edge of the sixth optical element 58 is recessed inward from the edge of the carrier plate 20. The size of the sixth optical element 58 can be adjusted according to requirements, for example, making the edge of the sixth optical element 58 tangent to one or more edges of the carrier plate 20. There is a proportional relationship between the size of the light-emitting structure 101 and the size of the reflection layer on the carrier plate 20 or the upper surface 201 in the cross-section. There is a proportional relationship between the size of the light-emitting structure 101 and the sizes of the second optical element 50 and the sixth optical element 58 in the cross-section. For example, in Fig. 14B it, the maximum width of the second optical element 50 or the sixth optical element 58 is 3 times or more the maximum width of the light-emitting structure 101, or the maximum width of the reflection layer on the carrier plate 20 / upper surface 201 is 3 times or more the maximum width of the light-emitting structure 101, so that light can be evenly distributed around, and the peak of the light field distribution falls within a range far from the virtual center line L0, or within a range of a large angle (e.g., Figure 14G 70° to 80°) of. In one embodiment, the maximum width of the second optical element 50 or the sixth optical element 58 is 5 times or more the maximum width of the light-emitting structure 101. In one embodiment, the maximum width of the reflection layer on the carrier plate 20 / upper surface 201 is 10 times or more the maximum width of the light-emitting structure 101.

[0131] Fig. 14C For Fig.14AThe bottom view of the optical element 58 in []. Viewed from the bottom view, the sixth optical element 58 is generally a mirror-symmetric structure. The lower surface 580 is located at the center of the sixth optical element 58. The inclined surface 581 extends generally from the lower surface 580 to the periphery towards the bottom surface 582. Therefore, the sixth optical element 58 can provide a generally symmetric optical effect. Taking Fig.14A as an example, the sixth optical element can provide a light field distribution that is symmetric about the virtual center line L0. Or taking Fig. 14B as an example, it can provide a circular light field distribution that is symmetric about the (geometric) center (not shown) of the sixth optical element 58 or the light-emitting device 5002. Among them, the lower surface 580 is a flat surface and is concave with respect to the bottom surface 582 to form a receiving space for combination with the light-emitting device. In addition, the degree of concavity of the sixth optical element 58 can be adjusted according to the height of the light-emitting device, for example, the flatness of the lower surface 580, the inclination of the inclined surface 581, the width of the bottom surface 582, and / or the dimensions and relative positions of these surfaces.

[0132] Fig.14D1 is the bottom view of an optical element in an embodiment of the present invention. In Figure 14D1-Figure 14D2 , the sixth optical element 58 is a mirror-symmetric structure, and the lower surface 580 is located at the center of the sixth optical element 58. Fig.14D2 is Fig.14D1 the schematic cross-sectional view of the optical element in []. More specifically, Fig.14D2 is Fig.14D1 the schematic cross-sectional view of the optical element in [] along the line AA'. The concave surface 584 is similar to the inclined surface 581 and extends generally uniformly from the lower surface 580 to the periphery towards the bottom surface 582. The concave surface 584 includes a portion closer to the surface 583 than the inclined surface 581, especially the ridge line 5840 between the surfaces 584. The ridge line 5840 connects the lower surface 580 and the bottom surface 582, and the ridge line 5840 is a flat straight line. The number of ridge lines 5840 is equal to the number of corners of the lower surface 580. In one embodiment, the ridge line 5840 is a curve with a single or multiple bends in a direction away from or towards the surface 583. Refer to Fig.14D1, the inclined surface 581 is located between the concave surfaces 584, collinear with the side positions of the lower surface 580, and the number of inclined surfaces 581 is equal to the number of sides of the lower surface 580. Moreover, the inclined surface 581 has a curved joint surface at the junction with the bottom surface 582. In one embodiment, the number of ridge lines 5840 is different from the number of corners of the lower surface 580. In one embodiment, the number of inclined surfaces 581 is different from the number of sides of the lower surface 580. The concave surface 584 is wider near the lower surface 580 and narrower near the bottom surface 582. In one embodiment, the concave surface 584 has a consistent width between the lower surface 580 and the bottom surface 582. In one embodiment, the concave surface 584 is narrower near the lower surface 580 and wider near the bottom surface 582.

[0133] Since the sixth optical element 58 is a symmetric structure, the sixth optical element 58 can provide a generally symmetric optical effect. Among them, the lower surface 580 is a flat surface and is concave inward compared with the bottom surface 582 to form a receiving space for combination with the light-emitting device. In addition, the degree of concavity of the lower surface 580 can be adjusted according to the height of the light-emitting device, and the lower surface 580 is generally parallel to the surface of the light-emitting device, especially parallel to the light-emitting device, particularly the upper surface of the optical element (such as the optical element 30) located at the highest position.

[0134] Fig.14E This is a cross-sectional view of an optical element in an embodiment of the present invention. The seventh optical element 59 is similar to the sixth optical element 58. The lower surface 590 is located at the central position of the seventh optical element 59, and the inclined surface 591 extends from the lower surface 590 to the periphery approximately uniformly to the bottom surface 592. It should be noted that the surface 593 of the seventh optical element 59 is not a completely flat surface and has a plurality of recesses 5930. The recesses 5930 are arranged on the surface 593 in a substantially regular manner, and the surface 593 has a varying tangent slope. In one embodiment, the surface 593 has a plurality of recesses 5930 randomly arranged on the surface 593 in an irregular manner. Specifically, referring to Fig.14E , the position of the end point C20 is higher than the position of the end point C10, and the slope of the tangent line C1 at the end point C10 is greater than the slope of the tangent line C2 at the end point C20. However, at the end point C30 at a higher point, the slope of the tangent line C3 is greater than the slope of the tangent line C2. In other words, the tangent slopes of the end points at different positions on the surface 593 do not become gentler as the vertical distance from the bottom surface 592 increases (or the position of the end point becomes higher), that is, the absolute value of the tangent slope becomes smaller in a certain height range and becomes larger in a certain higher height range, which is different from Fig.14AThe slope of the tangent line (not shown) of the middle surface 583 gradually decreases as the height increases, which is different. For example, the absolute value of the slope between the end point C20 and the end point C10 in the previous paragraph decreases as the height increases. However, in the height range between another end point C30 and the end point C20, the absolute value of the slope of the higher end point C30 is larger than the absolute value of the slope of the end point C20. The characteristics of these tangent lines can also be represented by the angle θ between the tangent line and the bottom surface 592. Refer to Figure 14F1 to Figure 14F3 , Figure 14F1 to Figure 14F3 which is a cross-sectional view of an optical element in an embodiment of the present invention. The angle between the tangent line passing through a point in a certain height range and the bottom surface will decrease as the height of the point from the bottom surface 592 increases. For example Figure 14F1 and Figure 14F2 the angle θ1 in represents the angle between the tangent line C1 (passing through the end point C10) and the bottom surface 592, and the angle θ2 represents the angle between the tangent line C2 (passing through the end point C20) and the bottom surface 592, and the angle θ2 is smaller than the angle θ1. And Figure 14F3 the angle θ3 in represents the angle between the tangent line C3 (passing through the end point C30) and the bottom surface 592, and the angle θ3 is larger than the angle θ2. That is to say, the angle in a certain height range decreases as the height from the bottom surface 592 increases. For example, the angle θ2 is smaller than the angle θ1, and at least one point can be found in a higher height range where the angle between the tangent line of the point and the bottom surface 592 is larger than one of the angle θ values obtained in the previous height range. For example, the angle θ3 is larger than the angle θ2. It should be noted that the angle between these tangent lines that meet the aforementioned slope (or angle θ) variation conditions in the height range and the bottom surface 592 is at most not greater than 90° and at least not less than 0°. In an embodiment, the surface 593 includes a plurality of arc surfaces, and these arc surfaces have the same or different curvature radii. It should be noted that Figures 14A to 14E the sixth optical element 58 and the seventh optical element 59 disclosed in can be used in conjunction with the aforementioned light-emitting structure 101, light-emitting units (such as the light-emitting units 10, 10a, 10b) and light-emitting devices (such as the light-emitting devices 1000, 1000’, 2000, 3000, 4000, 5000, 6000, 7000, 8000, 9000, 9000’).

[0135] Figure 14G is Fig.14A the light intensity distribution diagram of the device in. Figure 14G Similar to the way of representing light intensity in the aforementioned Figure 2C , for the meanings of the horizontal axis and the vertical axis, please refer to the previous paragraph and will not be described repeatedly. From Figure 14GIt can be seen that the light intensity distribution of the light-emitting device 5002 is generally symmetric with respect to the 0° angle, with the highest light intensity (about 0.2 a.u.) on both sides at approximately 60° to 80°, which is about three times the lowest light intensity (about 0.09 a.u.) in the central region between +10° and -10°.

[0136] Fig.15A This is a top view of a light-emitting device in an embodiment of the present invention. Refer to Fig.15A , the light-emitting device 8002 is similar to the light-emitting device 8000. The light-emitting device 8002 includes a carrier plate 200, a plurality of light-emitting devices 5002, and a fourth optical element 54 covering these light-emitting devices 5002 (refer to Fig. 15B ). For the relevant descriptions of the elements with the same or similar reference numerals, please refer to the elements with the same number or name in the foregoing paragraphs, and will not be repeated here. Refer to the foregoing paragraphs. From Fig.15A It can be seen that the sixth optical element 58 covers the carrier plate 20 and exposes at least a part of the carrier plate 20. These light-emitting devices 5002 are regularly arranged in a rectangular array at a certain interval in the X direction and the Y direction on the carrier plate 200. The optical characteristics of each light-emitting device 5002, such as luminous intensity, light intensity distribution, color temperature, and emission wavelength, are substantially the same. In other embodiments, the spacing distances between the light-emitting devices can be the same or different, or the spacing in the same direction gradually increases or decreases in one direction.

[0137] Fig. 15B is Fig.15A a schematic cross-sectional view of the device in. The fourth optical element 54 covers a plurality of light-emitting devices 5002 to adjust the light emitted by these light-emitting devices 5002, so that the light-emitting device 8002 can provide a planar light field with high uniformity and fewer bright spots or dark areas. More specifically, the difference between the maximum brightness and the minimum brightness on this planar light field is less than 3% to 10% of the maximum brightness, or there are no dark lines or bright lines that can be easily observed by the naked eye. For the relevant description of the fourth optical element 54, please refer to the foregoing paragraphs. It should be noted that through the setting of the sixth optical element 58, the light is further evenly transmitted in all directions, so that the light-emitting device 8002 can provide a more uniform planar light field. In one embodiment, the seventh optical element 59 can be used to replace the sixth optical element 58 in the light-emitting device 5002.

[0138] Fig.16A This is a schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention. Fig. 16B is Fig.16A a top view of the light-emitting device 7000' in. Fig.16A This is a schematic cross-sectional view on the plane formed by the X axis and the Z axis, Figure 16B This is a top view on the plane formed by the X axis and the Y axis, andFigure 16A is a cross-sectional schematic view along the line BB’ in Figure 16B . The light-emitting device 7000’ includes a carrier substrate 20, a light-emitting structure 101, a second optical element 50, a circuit layer 203, a circuit layer 204 and electrodes 106, 108 located in the carrier substrate 20. For the description of each element other than the circuit layers 203 and 204, please refer to the relevant paragraphs above. The circuit layer 203 is formed on the carrier substrate 20, and the circuit layer 204 penetrates the carrier substrate 20. More specifically, the first line 2041 and the second line 2042 of the circuit layer 204 are electrically connected to the circuit layer 203 on the upper surface 201 and the electrodes 106, 108 on the lower surface 202. In the light-emitting device 7000’, the second optical element 50 is in direct contact with the light-emitting structure 101. A part of the light emitted by the light-emitting structure 101 travels upward and leaves the light-emitting device 7000’ through the upper surface 501 of the second optical element 50, while a part of the light travels in the direction of the carrier substrate 20 and is reflected by the circuit layer 203 on the surface of the carrier substrate 20 and then leaves the light-emitting device 7000’ through the side surface 503 and / or the upper surface 501. The circuit layer 203 can be a specular reflection surface or a diffused surface, thereby guiding the light emitted by the light-emitting structure 101 above and / or around the light-emitting device 7000’. For the relevant description of the specular reflection surface and the diffused surface, please refer to the relevant paragraphs above.

[0139] Refer to Figure 16B, the light-emitting structure 101 is generally disposed at the geometric center position of the carrier board 20. The circuit layer 203 includes a first circuit layer 203a1, a second circuit layer 203a2, a third circuit layer 203b1, a fourth circuit layer 203b2, a fifth circuit layer 203c1, and a sixth circuit layer 203c2. The light-emitting structure 101 overlaps with the first circuit layer 203a1 and the second circuit layer 203a2 respectively, and the first circuit layer 203a1 is in direct contact with the electrode pad 1019, and the second circuit layer 203a2 is in direct contact with the electrode pad 1018. The first circuit layer 203a1 is connected to the third circuit layer 203b1 through the fifth circuit layer 203c1, and the second circuit layer 203a2 is connected to the fourth circuit layer 203b2 through the sixth circuit layer 203c2, and the maximum width of the circuit layers 203a1, 203a2 is wider than the maximum width of the circuit layers 203c1, 203c2. The narrower circuit layers 203c1, 203c2 can enable the adhesive material (not shown) used to adhere the light-emitting structure 101 and the circuit layer 203 to stay on the circuit layers 203a1, 203a2, and it is not easy to flow to the circuit layers 203b1, 203b2 through the circuit layers 203c1, 203c2. The adhesive material can be a conductive material such as solder that is easy to flow during the processing. Specifically, the adhesive material is more likely to flow on a metal material (such as the circuit layer 203) than on an insulating material (such as the carrier board 20), so the adhesive material usually flows along the wiring of the metal circuit layer. By setting the circuit layers 203c1, 203c, since the maximum width of the circuit layers 203c1, 203c is narrower than the maximum width of the circuit layers 203a1, 203a2, the path for the adhesive material to flow to the circuit layers 203b1, 203b2 is reduced and it is not easy to flow to the circuit layers 203b1, 203b2, so as to maintain sufficient adhesive material between the circuit layers 203a1, 203a2 and the circuit layers 203b1, 203b2 to maintain a reliable electrical connection, and it can be avoided that the adhesive material flows onto the circuit layers 203b1, 203b2 and then affects their reflectivity. The shapes of the first circuit layer 203a1 and the second circuit layer 203a2 are both generally rectangular, and they are symmetrically disposed on the carrier board 20 with respect to the left and right of the light-emitting structure 101. The shapes of the third circuit layer 203b1 and the fourth circuit layer 203b2 are different, but they are correspondingly disposed on both sides of the light-emitting structure 101, and the fifth circuit layer 203c1 and the sixth circuit layer 203c2 form a rotationally symmetric structure with respect to the light-emitting structure 101. In an embodiment, the shapes of the third circuit layer 203b1 and the fourth circuit layer 203b2 are the same, and with the light-emitting structure 101 as the center, the pattern of the circuit layer 203 after rotating 180° on the upper surface 201 is the same as the original pattern, so that the circuit layer 203 is a rotationally symmetrical pattern.The first line 2041 of the circuit layer 204 overlaps with the third circuit layer 203b1, and the second line 2042 overlaps with the fourth circuit layer 203b2. In one embodiment, the first line 2041 and the second line 2042 are formed on the inner wall of the through hole in the carrier 20 or in almost all of the space of the through hole, and their material is metal or other conductive materials. It should be noted that the surfaces of the lines 2041 and 2042 in contact with the circuit layer 203 are non-planar surfaces, such as protruding or concave surfaces. In one embodiment, the surfaces of the lines 2041 and 2042 in contact with the electrodes 106 and 108 are non-planar surfaces, such as protruding or concave surfaces.

[0140] Figure 16C is a top view of a light-emitting device according to another embodiment of the present invention. Refer to Figure 16C , the circuit layer 203 further includes a seventh circuit layer 203d1 and an eighth circuit layer 203d2, and the seventh circuit layer 203d1 and the eighth circuit layer 203d2 are disposed on the carrier 20 symmetrically with respect to the light-emitting structure 101 substantially. It should be noted that the circuit layer 203 is composed of a material that can reflect the light emitted by the light-emitting structure 101. Therefore, the arrangement of the seventh circuit layer 203d1 and the eighth circuit layer 203d2 can improve the light intensity in the direction from the light-emitting structure 101 to the circuit layers 203d1 and 203d2, so that the light originally irradiated on the carrier 20 is reflected outward by the circuit layers 203d1 and 203d2. In other words, compared with Figures 16A to 16B the embodiment of Figure 16C the circuit layer 203 of Figure 16C achieves a better reflection effect by covering a larger area on the surface of the carrier 20. Specifically, in

[0141] the above-described embodiments are only for explaining the technical idea and features of the present invention, and the purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly. It should not be used to limit the patent scope of the present invention, that is, all equivalent changes or modifications made according to the spirit disclosed in the present invention should still be covered by the patent scope of the present invention.

Claims

1. A light-emitting device, characterized in that, Comprising: A carrier substrate having a reflective surface and a bottom surface opposite to the reflective surface; A light-emitting structure above the reflective surface; A first optical element disposed above the light-emitting structure to reflect light from the light-emitting structure; A second optical element surrounding the light-emitting structure, having an upper surface and a lower surface, and contacting the first optical element; Wherein the upper surface and the lower surface are parallel, the upper surface is higher than the light-emitting structure and lower than the first optical element, and the lower surface contacts the reflective surface. Wherein, in a cross-sectional view, the portion of the second optical element located on one side of the light-emitting structure has a trapezoidal shape, the trapezoid has a first waist away from the light-emitting structure and a second waist close to the light-emitting structure, and in the direction away from the carrier substrate from the reflective surface of the carrier substrate, the first waist gradually approaches the light-emitting structure.

2. The light-emitting device according to claim 1, wherein in a cross-sectional view, the light-emitting structure has a virtual center line, and the second optical element is substantially symmetric about the center line and surrounds the light-emitting structure.

3. The light-emitting device according to claim 1, wherein The first optical element is a white paint reflective layer, a ceramic ink reflective layer, a metal reflective layer, or a distributed Bragg reflector.

4. The light-emitting device according to claim 1, wherein, The second optical element contains a wavelength conversion material.

5. The light-emitting device according to claim 1, further comprising a light-transmitting layer located between the first optical element and the light-emitting structure and contacting both the first optical element and the light-emitting structure simultaneously.

6. The light-emitting device according to claim 1, further comprising an electrode below the bottom surface.

7. The light-emitting device according to claim 1, wherein, The first optical element and the light-emitting structure respectively have a first width and a second width parallel to the reflective surface, and the first width is greater than the second width.

8. The light-emitting device according to claim 1, further comprising a virtual center line passing through the light-emitting device, and the light-emitting intensity of the light-emitting device has a distribution substantially symmetric about the virtual center line.

9. The light-emitting device according to claim 8, wherein the light-emitting intensity of the light-emitting device has a maximum value within an angle between 40° and 60° on both sides of the virtual center line.

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