Solid-state imaging device and method for manufacturing solid-state imaging device

Abstract

A solid-state imaging device according to one embodiment of the present disclosure includes a plurality of photoelectric conversion sections stacked on a semiconductor substrate and having different wavelength selectivity from each other, and a wiring formed on the semiconductor substrate and electrically connected to the plurality of photoelectric conversion sections. Each of the photoelectric conversion sections includes a photoelectric conversion film, and a first electrode and a second electrode disposed across the photoelectric conversion film. The wiring extends in a normal direction of the semiconductor substrate, and includes a vertical wiring formed in contact with the second electrode of each of the photoelectric conversion sections.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a solid-state imaging device and a manufacturing method of a solid-state imaging device. BACKGROUND

[0002] A photoelectric conversion section using a material having wavelength selectivity such as an organic semiconductor material is capable of performing photoelectric conversion on light of a specific wavelength band. For example, each of Patent Literatures 1 to 4 discloses a solid-state imaging device including a photoelectric conversion section for each pixel.

[0003] LIST OF CITATIONS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Unexamined Patent Application Publication No. 2005-51115

[0006] Patent Literature 2: Japanese Unexamined Patent Application Publication No. 2003-332551

[0007] Patent Literature 3: Japanese Unexamined Patent Application Publication No. 2011-29337

[0008] Patent Literature 4: Japanese Unexamined Patent Application Publication No. 2017-157816 SUMMARY

[0009] Incidentally, in the above-described solid-state imaging device, in a case where a plurality of photoelectric conversion sections having mutually different wavelength selectivity are provided for each pixel, in order to obtain electric charges generated by each photoelectric conversion section as a pixel signal, a wiring connected to each photoelectric conversion section needs to be provided. The wiring is one of important elements of effective output and transmission of the pixel signal. Therefore, it is desirable to provide a solid-state imaging device including a wiring that allows effective output and transmission of a pixel signal and a manufacturing method of a solid-state imaging device.

[0010] A solid-state imaging device according to an embodiment of the present disclosure includes a plurality of photoelectric conversion sections stacked on a semiconductor substrate and having mutually different wavelength selectivity, and a wiring formed on the semiconductor substrate and electrically connected to the plurality of photoelectric conversion sections. Each of the photoelectric conversion sections includes a photoelectric conversion film, and a first electrode and a second electrode disposed across the photoelectric conversion film. The wiring extends in a normal direction of the semiconductor substrate, and includes a vertical wiring formed in contact with the second electrode of each of the photoelectric conversion sections.

[0011] In the solid-state imaging device according to the embodiment of the present disclosure, the vertical wiring is formed in contact with each of the second electrodes of the plurality of photoelectric conversion sections stacked on the semiconductor substrate. Therefore, the charges generated by each of the photoelectric conversion sections are obtained via the common vertical wiring, which makes it possible to simplify the wiring layout and shorten the wiring distance, as compared with a case where the charges generated by each of the photoelectric conversion sections are obtained via the wiring provided for each of the photoelectric conversion sections or via the wiring laid in the in-plane direction of the stacked surface. As a result, the pixel signals can be effectively output and transmitted.

[0012] The manufacturing method of the solid-state imaging device according to the embodiment of the present disclosure includes the following two steps:

[0013] The second substrate including, in order from the second semiconductor substrate side, a second lower electrode, a second photoelectric conversion film, and a second upper electrode is attached to the first substrate including, in order from the first semiconductor substrate side, a first photoelectric conversion film and a first upper electrode, so that the first upper electrode and the second upper electrode face each other; and

[0014] After the first substrate is removed, a counter electrode facing the first upper electrode across the first photoelectric conversion film is formed, and a vertical wiring electrically connected to the second lower electrode and the counter electrode is formed by forming a groove portion reaching the second lower electrode from the counter electrode and filling the groove portion with a conductive material.

[0015] In the manufacturing method of the solid-state imaging device according to the embodiment of the present disclosure, the first substrate and the second substrate are attached to each other to stack the first lower electrode and the counter electrode, and a vertical wiring in contact with the stacked first lower electrode and counter electrode is formed. Therefore, the charges generated by the first photoelectric conversion film and the second photoelectric conversion film are obtained via the common vertical wiring, which makes it possible to simplify the wiring layout and shorten the wiring distance, as compared with a case where the charges generated by the first photoelectric conversion film and the second photoelectric conversion film are obtained via the wiring provided for each of the first photoelectric conversion film and the second photoelectric conversion film or via the wiring laid in the in-plane direction of the stacked surface. As a result, the pixel signals can be effectively output and transmitted. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a diagram showing a schematic configuration example of a solid-state imaging device according to the embodiment of the present disclosure.

[0017] Figure 2 is a diagram showing a planar configuration example of a solid-state imaging device.

[0018] Figure 3 is a diagram showing a cross-sectional configuration example taken along the line A-A' of Figure 2

[0019] ​Figure 4 is a view showing a cross-sectional configuration example taken along a line B-B' of Figure 2

[0020] Figure 5

[0021] Figure 6

[0022] Figure 7

[0023] Figure 8 Figure 7

[0024] Figure 9 Figure 7

[0025] Figure 10 Figure 8 Figure 9

[0026] Figure 11 Figure 10

[0027] Figure 12 Figure 11

[0028] Figure 13 Figure 12

[0029] Figure 14 Figure 13

[0030] Figure 15 Figure 14

[0031] Figure 16 Figure 2

[0032] Figure 17 Figure 2

[0033] ​​​​​​​​​​​​​​​​​​​​​​​​​Figure 18 is a diagram showing a cross-sectional configuration of a solid-state imaging device in Figure 16 .

[0034] Figure 19 is a diagram showing a cross-sectional configuration of a solid-state imaging device in Figure 2 .

[0035] Figure 20 is a diagram showing a cross-sectional configuration of a solid-state imaging device in Figure 16 .

[0036] Figure 21 is a diagram showing a cross-sectional configuration of a part of a solid-state imaging device in Figure 2 , Figure 17 or Figure 19 .

[0037] Figure 22 is a diagram showing a cross-sectional configuration of a part of a solid-state imaging device in Figure 16 , Figure 18 or Figure 20 .

[0038] Figure 23 is a diagram showing an example of a schematic configuration of an imaging system including a solid-state imaging device according to any one of the above-described embodiments and modifications thereof.

[0039] Figure 24 is a block diagram showing an example of a schematic configuration of a vehicle control system.

[0040] Figure 25 is an explanatory diagram showing an example of a placement position of an outside-vehicle information detecting unit and an imaging unit.

[0041] Figure 26 is a diagram showing an example of a schematic configuration of an endoscope surgery system.

[0042] Figure 27 is a block diagram showing an example of a functional configuration of a camera head and a camera control unit (CCU). DETAILED DESCRIPTION

[0043] Hereinafter, preferred embodiments according to the present disclosure will be explained in detail with reference to the attached drawings. Note that in this specification and the attached drawings, constitutional elements having substantially the same function configuration are assigned with the same reference numerals, and overlapping explanation thereof will be omitted.

[0044] In addition, in the present specification and drawings, in some cases, a plurality of constituent elements having substantially the same functional configuration are distinguished by adding different numerals at the end of the same reference sign. Note that, in the case where there is no particular need to distinguish them, only the same reference sign is given to a plurality of constituent elements having substantially the same or similar functional configuration. In addition, in some cases, similar constituent elements illustrated in different embodiments are distinguished by adding different alphabetic characters at the end of the same reference sign. Note that, in the case where there is no particular need to distinguish them, only the same reference sign is given to similar constituent elements.

[0045] In addition, the drawings to be referred to in the following description are drawings for facilitating the explanation and understanding of the embodiments of the present disclosure, and in some cases, the shapes, sizes, proportions, and the like shown in the drawings are different from the actual situation for the sake of simplicity. In addition, the solid-state imaging device shown in the drawings can be appropriately changed in design based on the following description and publicly known technologies. In addition, in the explanation using the cross-sectional view of the solid-state imaging device, the upper and lower directions of the stacked structure of the solid-state imaging device correspond to the relative directions when the incident surface on which light is incident on the solid-state imaging device is located on the upper side, and in some cases, are different from the upper and lower directions according to the gravitational acceleration.

[0046] In addition, in the following description, the expression regarding the size and shape does not mean only the same value as the mathematically defined numerical value and the geometrically defined shape, but also includes the case where there is an industrially acceptable difference in the manufacturing process of the solid-state imaging device and the shape similar to the shape.

[0047] Further, in the following description of the circuit configuration, unless otherwise specified, "connection" means electrical connection between a plurality of elements. In addition, in the following description, "connection" includes not only the case of direct electrical connection of a plurality of elements, but also the case of indirect electrical connection of a plurality of elements via another element.

[0048] Note that the explanation is given in the following order.

[0049] 1. Embodiment (Solid-state imaging device)... Figures 1-15

[0050] 2. Modified example (Solid-state imaging device)... Figures 16-22

[0051] 3. Application example (Imaging system)... Figure 23

[0052] 4. Application example

[0053] Application example of mobile body... Figure 24 and Figure 25

[0054] Application example of endoscope surgery system Figure 26 and Figure 27

[0055] <1. Embodiments>

[0056] [Configuration]

[0057] Figure 1 An example of a schematic configuration of a solid-state imaging device 1 according to an embodiment of the present disclosure is shown. The solid-state imaging device 1 includes a pixel array section 10 in which a plurality of pixels 100 are arranged in a matrix. The pixel array section 10 has a configuration in which a plurality of pixels 100 are stacked on a semiconductor substrate 300 including, for example, silicon. The pixel array section 10 has, for example, a configuration in which a plurality of pixels 100 are arranged in a matrix on the semiconductor substrate 300. The semiconductor substrate 300 corresponds to a specific example of the "semiconductor substrate" of the present disclosure. The pixel array section 10 also includes a plurality of pixel circuits on the semiconductor substrate 300 including, for example, silicon, a plurality of pixel drive lines 42, and a plurality of vertical signal lines 44. The pixel drive line 42 is a wiring to which a control signal for controlling the output of the charge stored in the pixel 100 is applied, and extends, for example, in the row direction. The vertical signal line 44 is, for example, a wiring that respectively outputs the pixel signal output from each pixel circuit to a peripheral circuit section 80, and extends, for example, in the column direction. The peripheral circuit section 80 is provided, for example, on the semiconductor substrate 300 and around the pixel array section 10. The peripheral circuit section 80 includes, for example, a vertical drive circuit section 32, a column signal processing circuit section 34, a horizontal drive circuit section 36, an output circuit section 38, a control circuit section 40, and the like. Each block of the solid-state imaging device 1 according to the present embodiment is described in detail below.

[0058] (Pixel array section 10)

[0059] The pixel array section 10 includes a plurality of pixels 100. Each pixel 100 includes, for example, a normal pixel that generates a pixel signal for image generation and a pair of phase difference detection pixels that generate a pixel signal for focus detection. Here, the pixel 100 refers to a solid-state imaging element (unit pixel) that can be considered as a unit that outputs one result for each color in a case where light of each color is detected and the detection result is output. Each pixel 100 includes a plurality of photoelectric conversion sections and a plurality of pixel transistors. The pixel array section 10 also includes a plurality of pixel circuits. Each pixel circuit, for example, generates a pixel signal based on the charge output from the photoelectric conversion sections PD, PD2, and PD3, and outputs the pixel signal. The pixel circuit includes a plurality of pixel transistors, and includes, for example, a transfer transistor, a selection transistor, a reset transistor, an amplification transistor, and the like. The pixel transistor is, for example, a MOS (Metal Oxide Semiconductor) transistor.

[0060] (Vertical drive circuit section 32)

[0061] The vertical drive circuit section 32 includes, for example, a shift register. The vertical drive circuit section 32 selects the pixel drive line 42 and supplies a pulse for driving the pixel 100 to the selected pixel drive line 42 to drive the pixels 100 in a predetermined unit pixel row. The vertical drive circuit section 32 sequentially and selectively scans each pixel 100 of the pixel array section 10 in a predetermined unit pixel row in the vertical direction (up and down direction) and supplies a pixel signal based on the electric charge generated in accordance with the amount of light received by the photoelectric conversion section of each pixel 100 to the column signal processing circuit section 34 via the vertical signal line 44. Figure 1

[0062] (column signal processing circuit section 34)

[0063] The column signal processing circuit section 34 is arranged for each column of the pixels 100 and performs signal processing such as noise removal for each pixel column on the pixel signal output from the pixels 100 in a predetermined unit pixel row. The column signal processing circuit section 34 performs Correlated Double Sampling (CDS) processing to remove fixed pattern noise inherent to the pixels. The column signal processing circuit section 34 includes, for example, a single slope A / D converter. The single slope A / D converter includes, for example, a comparator and a counter circuit and performs AD (analog-digital) conversion on the pixel signal.

[0064] (horizontal drive circuit section 36)

[0065] The horizontal drive circuit section 36 includes, for example, a shift register. The horizontal drive circuit section 36 sequentially outputs a horizontal scanning pulse to sequentially select the above-described column signal processing circuit section 34 and outputs the pixel signal from each column signal processing circuit section 34 to the horizontal signal line 46.

[0066] (output circuit section 38)

[0067] The output circuit section 38 performs signal processing on the pixel signal sequentially supplied from the column signal processing circuit section 34 via the horizontal signal line 46 and outputs the pixel signal obtained thereby. The output circuit section 38 can function, for example, as a function section that performs buffering, or can perform processing such as black level adjustment, column bias correction, and the like, as well as various types of digital signal processing. Buffering refers to temporary storage of the pixel signal to compensate for the difference between the processing speed and the transmission speed when exchanging the pixel signal. The input / output terminal 48 is a terminal for exchanging signals with an external device.

[0068] (control circuit section 40)

[0069] ​The control circuit portion 40 receives an input clock and data for giving an instruction about an operation mode or the like, and outputs data such as internal information of the pixel 100. The control circuit portion 40 generates a clock signal and a control signal that are operation bases of the vertical drive circuit portion 32, the column signal processing circuit portion 34, the horizontal drive circuit portion 36, and the like, on the basis of a vertical synchronization signal, a horizontal synchronization signal, and a main clock. The control circuit portion 40 outputs the generated clock signal and the generated control signal to the vertical drive circuit portion 32, the column signal processing circuit portion 34, the horizontal drive circuit portion 36, and the like.

[0070] The planar configuration example of the solid-state imaging device 1 according to the present embodiment is not limited to Figure 1 the example illustrated, and can include, for example, other circuit portions and the like.

[0071] (Pixel 100)

[0072] Next, a description will be given of a schematic configuration of the pixel 100 with reference to Figures 2-4 FIG. 1. Figure 2 A planar configuration example of the solid-state imaging device 1 is illustrated. Figure 3 A cross-sectional configuration example taken along a line A-A' of Figure 2 FIG. 1 is illustrated. Figure 4 A cross-sectional configuration example taken along a line B-B' of Figure 2 FIG. 1 is illustrated.

[0073] The solid-state imaging device 1 includes, for example, a pixel array portion 10 in which a plurality of pixels 100 are arranged in a matrix shape in the center. The solid-state imaging device 1 further includes, for example, a pixel transistor region 70 and a peripheral circuit portion 80 that surround the pixel array portion 10. In the pixel transistor region 70, some of a plurality of pixel circuits (a plurality of pixel transistors) are provided. The peripheral circuit portion 80 is provided at an outer peripheral portion of the pixel transistor region 70.

[0074] In the pixel 100 (or the pixels 100a and 100b), a semiconductor region 312a of a second conductivity type (for example, N type) is provided in a semiconductor region of a semiconductor substrate 300 including, for example, silicon, of a first conductivity type (for example, P type). A photoelectric conversion portion PD3 is formed by a PN junction of the semiconductor region 312a and a semiconductor region 312b of the first conductivity type (for example, P type) located directly below the semiconductor region 312a. The photoelectric conversion portion PD3 absorbs red light (for example, light having a wavelength of 620 nm to 750 nm) to generate electric charges.

[0075] A wiring layer comprising wiring 306 formed using tungsten (W), aluminum (Al), copper (Cu), etc., is disposed on the side of the semiconductor substrate 300 opposite to the semiconductor region 312a (the side opposite to the light-receiving surface). In this wiring layer, a plurality of electrodes 310 formed using W, Al, Cu, etc., are configured as gate electrodes of a pixel circuit (a plurality of pixel transistors) for reading out the charge generated by the photoelectric conversion unit PD3. Specifically, the electrodes 310 are configured to face a semiconductor region in the semiconductor substrate 300 having a first conductivity type (e.g., P-type) separated by an insulating film 324. Furthermore, in the semiconductor substrate 300, a semiconductor region 322a having a second conductivity type (e.g., N-type) is configured to clamp the aforementioned semiconductor region having the first conductivity type (e.g., P-type), and the semiconductor region 322a can be used as a source / drain region of the pixel circuit (a plurality of pixel transistors).

[0076] like Figure 3 and Figure 4 As shown, in the semiconductor substrate 300, a through electrode 302 for extracting the charge generated by the photoelectric conversion films 112 and 212 (described later) to the wiring 306 is configured to extend through a portion of the semiconductor substrate 300. The through electrode 302 extends in the normal direction of the semiconductor substrate 300 and has an upper end that contacts the wiring 250 and a lower end that contacts the wiring 306. That is, the through electrode 302 is a columnar vertical wiring extending from the wiring 250 to a depth reaching the wiring 306 (to the layer in which pixel circuitry is formed). The through electrode 302 corresponds to a specific example of the "vertical wiring" of this disclosure.

[0077] An insulating film 218, including an alumina film (Al2O3), is formed on the outer periphery of the through electrode 302 to prevent short circuits between the through electrode 302 and the semiconductor substrate 300. The insulating film 218 preferably has a low interface state to reduce the interface state between the semiconductor substrate 300 and the insulating film 218 and suppress the generation of dark current from the interface between the semiconductor substrate 300 and the insulating film 218. For example, in addition to an alumina film, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (SiON), silicon carbide (SiC), carbon-doped silicon oxide (SiCO), etc., can also be used as such an insulating film 218, and there are no particular limitations on the insulating film 218. Examples of methods for forming these films can include CVD (Chemical Vapor Deposition), Physical Vapor Deposition (PVD), Atomic Layer Deposition (ALD), etc. There are no particular restrictions on the materials and methods used to form the insulating film 218.

[0078] The through electrode 302 can be connected to the floating diffusion 322b and the electrode 310 provided in a semiconductor region having a second conductivity type (for example, N type) provided in the semiconductor substrate 300 through a wiring 306 provided in the above-described wiring layer. The floating diffusion 322b is a region that temporarily stores electric charges generated by the photoelectric conversion films 112 and 212. In the semiconductor substrate 300, an isolation insulating film 320 can be provided adjacent to the floating diffusion 322b or a source / drain region (semiconductor region 322a) of each pixel transistor.

[0079] As shown in FIG. 1, for example, an insulating film 218 including an Al2O3 film or the like and allowing light to pass therethrough is provided on the semiconductor substrate 300. The insulating film 218 allows light to pass therethrough, which can allow a photoelectric conversion section PD3 to be provided below the insulating film 218 to receive light and perform photoelectric conversion, that is, detect light. Figure 3 Figure 4 As shown in FIG. 1, for example, an insulating film 218 including an Al2O3 film or the like and allowing light to pass therethrough is provided on the semiconductor substrate 300. The insulating film 218 allows light to pass therethrough, which can allow a photoelectric conversion section PD3 to be provided below the insulating film 218 to receive light and perform photoelectric conversion, that is, detect light.

[0080] The insulating film 218 is provided with a wiring 250 electrically connected to the through electrode 302 and serving as a light-blocking film. For the wiring 250, for example, W and a laminated film of a titanium (Ti) film and a titanium nitride (TiN) film as a barrier metal can be used. The material forming the wiring 250 is not particularly limited.

[0081] The photoelectric conversion film 212 is provided above the insulating film 218 to be sandwiched between the electrode 210 and the electrode 216. The photoelectric conversion section PD2 can be configured using the photoelectric conversion film 212, the electrode 210, and the electrode 216. The photoelectric conversion section PD2 includes the photoelectric conversion film 212 and the electrodes 210 and 216 disposed with the photoelectric conversion film 212 interposed therebetween. The photoelectric conversion section PD2 has a structure in which the electrode 216, the photoelectric conversion film 212, and the electrode 210 are laminated in this order from the semiconductor substrate 300 side. For example, the photoelectric conversion section PD2 (photoelectric conversion film 212) absorbs green light (for example, light having a wavelength of 495 nm to 570 nm) to generate electric charges (photoelectric conversion).

[0082] The photoelectric conversion section PD2 corresponds to a specific example of the “photoelectric conversion section” or the “second photoelectric conversion section” of the present disclosure. The electrode 210 corresponds to a specific example of the “first electrode” or the “second upper electrode” of the present disclosure. The electrode 216 corresponds to a specific example of the “second electrode” or the “second lower electrode” of the present disclosure. The photoelectric conversion film 212 corresponds to a specific example of the “photoelectric conversion film” or the “second photoelectric conversion film” of the present disclosure.

[0083] ​The electrodes 210 and 216 can be formed using, for example, a transparent conductive film that allows light to pass through, such as an indium tin oxide (including crystalline ITO and amorphous ITO) film. The material forming the electrodes 210 and 216 is not limited to the above-described ITO, and can also include other materials. For example, the transparent conductive film preferably includes a material having a band gap of 2.5 eV or more, preferably 3.1 eV or more. Examples of the tin oxide-based material used for the transparent conductive film can include tin oxide, antimony tin oxide (Sb-doped SnO2, such as ATO), fluorine tin oxide (F-doped SnO2, such as FTO), and the like. Examples of the zinc oxide-based material can include aluminum-zinc oxide (Al-doped ZnO, such as AZO), gallium-zinc oxide (Ga-doped ZnO, such as GZO), indium-zinc oxide (In-doped ZnO, such as IZO), indium-gallium-zinc oxide (In- and Ga-doped ZnO4, such as IGZO), indium-tin-zinc oxide (In- and Sn-doped ZnO, such as ITZO), and the like. Further, examples of other materials can include indium gallium oxide (In-doped Ga2O3, such as IGO), CuInO2, MgIn2O4, CuI, InSbO4, ZnMgO, CdO, ZnSnO3, and the like. In addition, the material of the photoelectric conversion film 212 is described in detail later.

[0084] Figure 3 The wiring 206 connected to the electrode 210 illustrated in FIG. 6 can also function as a light-blocking film, and can be formed using, for example, a material such as W, Ti, TiN, Al, or Cu. The material of the wiring 206 is not limited thereto, and the wiring 206 can be formed using any other material.

[0085] As illustrated in FIG. 6, the photoelectric conversion section PD2 includes a Figure 3 and Figure 4 The photoelectric conversion section PD2 includes a cumulative electrode 214 (214a and 214b) that opposes the electrode 210 with the photoelectric conversion film 212 interposed therebetween, to temporarily store the electric charge generated by the photoelectric conversion film 212 in the photoelectric conversion film 212. Specifically, the cumulative electrode 214 contacts the photoelectric conversion film 212 with the insulating film 218 or with the insulating film 218 and a semiconductor layer not illustrated interposed therebetween. The cumulative electrode 214 and the electrode 216 are insulated from each other by the insulating film 218. The cumulative electrode 214 (214a and 214b) corresponds to a specific example of the “cumulative electrode” or the “second cumulative electrode” of the present disclosure. The insulating film 218 corresponds to a specific example of the “insulating layer” or the “second insulating layer” of the present disclosure.

[0086] Wiring 206 and 250 and the like are electrically connected to the electrode 216 and the accumulation electrode 214, and a desired potential is applied to the electrode 216 and the accumulation electrode 214 using these wirings 206 and 250 and the like. Wiring 108 and 106 and the like are electrically connected to the electrode 210, and a desired potential is applied to the electrode 210 using these wirings 108 and 106 and the like. Further, the electrode 216 is connected to a floating diffusion portion 322b provided in the semiconductor substrate 300 via a through electrode 302. Controlling the potential applied to the electrode 210 and the accumulation electrode 214 can store the charge generated by the photoelectric conversion film 212 in the photoelectric conversion film 212 and take out the charge to the floating diffusion portion 322b via the electrode 216 and the through electrode 302. The accumulation electrode 214 can be used as a charge accumulation electrode for attracting the charge generated by the photoelectric conversion film 212 according to the applied potential and storing the charge in the photoelectric conversion film 212. In order to effectively use the light incident on the pixel 100, the accumulation electrode 214 is preferably provided to have a larger area than the area of the electrode 216 when viewed from above the light receiving surface.

[0087] Like the electrodes 210 and 216, the accumulation electrode 214 is formed using a transparent conductive film. Forming the electrodes 210 and 216 and the accumulation electrode 214 using a transparent conductive film in this way can cause the photoelectric conversion portion PD3 to also detect the light incident on the pixel 100. The film thickness of each of the electrodes 210 and 216 and the accumulation electrode 214 is 5 nm to 200 nm, and is preferably about 30 nm to about 100 nm.

[0088] An insulating film 218 is provided between the electrode 216 and the accumulation electrode 214 and between the photoelectric conversion film 212 and the accumulation electrode 214 to electrically insulate them. The insulating film 218 can be a film of fixed charge having the same polarity as the charge generated by the photoelectric conversion film 212.

[0089] The through electrode 120 for taking out the electric charge generated by the photoelectric conversion film 112 to the wiring 306 is provided above the insulating film 218 to pass through the photoelectric conversion section PD2 and the photoelectric conversion section PD1 described later. The through electrode 120 corresponds to a specific example of the “vertical wiring” of the present disclosure. The through electrode 120 is formed on the semiconductor substrate 300. The through electrode 120 is disposed at a position opposite to the through electrode 302 in the normal line direction of the semiconductor substrate 300. The lower end of the through electrode 120 is in contact with the electrode 216, and thus is electrically connected to the through electrode 302 via the electrode 216. The upper end of the through electrode 120 is in contact with the electrode 116 described later. That is, the through electrode 120 is electrically connected to the photoelectric conversion sections PD1 and PD2. The through electrode 120 is a vertical wiring that extends in the normal line direction of the semiconductor substrate 300 and is formed to be in contact with the electrode 116 of the photoelectric conversion section PD1 (described later) and the electrode 216 of the photoelectric conversion section PD2. The through electrode 120 includes a columnar conductive member that passes through the same surface as the bonding surface S described later and is not subjected to a bonding process. That is, the through electrode 120 does not include a laminate constituted by laminating conductive members in the normal line direction of the semiconductor substrate 300, but is a single conductive member.

[0090] The insulating film 117 including an aluminum oxide film (Al2O3) or the like is formed on the outer periphery of the through electrode 120 to prevent short-circuiting between the through electrode 120 and the electrodes 110 and 210 of the photoelectric conversion sections PD1 and PD2. As the insulating film 117, for example, in addition to the aluminum oxide film, a silicon oxide (SiO2) film, a silicon nitride (Si3N4) film, a silicon oxynitride (SiON) film, a silicon carbide (SiC) film, a carbon-doped silicon oxide (SiCO) film, or the like can be used, and the insulating film 117 is not particularly limited. Examples of the method of forming these films can include a CVD method, a PVD method, an ALD method, or the like. However, in the present embodiment, the material and the method of forming the insulating film 117 are not particularly limited.

[0091] The sealing film 204 in contact with and sealing the electrode 210 is provided above the electrode 210. The sealing film 204 corresponds to a specific example of the “second sealing film” of the present disclosure. Examples of the material of the sealing film 204 can include an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like that allows light to pass therethrough. For example, Al2O3, SiO2, Si3N4, SiON, SiC, SiCO, or the like can be used as the material of the sealing film 204, and the material of the sealing film 204 is not particularly limited.

[0092] A sealing film 119 in contact with the electrode 110 described later and sealing the electrode 110 is provided above the sealing film 204. The sealing film 119 corresponds to a specific example of the "first sealing film" of the present disclosure. Examples of the material of the sealing film 119 can include an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, and the like that allow light to pass through. For example, Al2O3, SiO2, Si3N4, SiON, SiC, SiCO, and the like can be used as the material of the sealing film 119, and the material of the sealing film 119 is not particularly limited.

[0093] The sealing film 204 and the sealing film 119 have a bonding surface S that is bonded to each other by a predetermined bonding process. The bonding surface S corresponds to a specific example of the "bonding surface" of the present disclosure. A carbon film 205 that bonds the sealing film 204 and the sealing film 119 together is provided on the bonding surface S. The carbon film 205 corresponds to a specific example of the "carbon film" of the present disclosure. For example, the carbon film 205 is formed using diamond-like carbon (DLC) having a thickness of 1 to 5 molecular layers. The DLC is a transparent thin film and does not block light. The DLC can be doped with impurities at the time of film formation. In this case, the DLC has semiconductor properties, which allows the DLC to operate like an IR cut filter.

[0094] A photoelectric conversion film 112 is provided above the sealing film 119 to be sandwiched between the electrode 110 and the electrode 116. The photoelectric conversion film 112, the electrode 110, and the electrode 116 can be used to configure a photoelectric conversion section PD1. The photoelectric conversion section PD1 includes the photoelectric conversion film 112 and the electrodes 110 and 116 disposed across the photoelectric conversion film 112. The photoelectric conversion section PD1 has a structure in which the electrode 110, the photoelectric conversion film 112, and the electrode 116 are stacked in this order from the side of the semiconductor substrate 300. For example, the photoelectric conversion section PD1 (photoelectric conversion film 112) absorbs blue light (for example, light having a wavelength of 425 nm to 495 nm) to generate electric charges (photoelectric conversion). That is, each pixel 100 includes a stacked type photoelectric conversion section in which three photoelectric conversion sections PD1, PD2, and PD3 having different wavelength selectivities from each other are stacked. The solid-state imaging device 1 includes the above-described stacked type photoelectric conversion section for each pixel 100. The electrodes 110 and 116 are formed using a material similar to that of the electrodes 210 and 216 (transparent conductive film).

[0095] The photoelectric conversion section PD1 corresponds to a specific example of the "photoelectric conversion section" or the "first photoelectric conversion section" of the present disclosure. The electrode 110 corresponds to a specific example of the "first electrode" or the "first upper electrode" of the present disclosure. The electrode 116 corresponds to a specific example of the "second electrode" or the "opposite electrode" of the present disclosure. The photoelectric conversion film 112 corresponds to a specific example of the "photoelectric conversion film" or the "first photoelectric conversion film" of the present disclosure.

[0096] AsFigure 3 and Figure 4 As illustrated in FIG. 1, the photoelectric conversion section PD1 includes a storage electrode 114 (114a and 114b) that opposes the electrode 110 across the photoelectric conversion film 112 to temporarily store the electric charge generated by the photoelectric conversion film 112 in the photoelectric conversion film 112. Specifically, the storage electrode 114 contacts the photoelectric conversion film 212 across the insulating film 118 or across the insulating film 118 and a semiconductor layer not shown. Examples of the material of the insulating film 118 can include Al2O3 or the like that allows light to pass through. The storage electrode 114 (114a and 114b) corresponds to a specific example of the "storage electrode" or the "first storage electrode" of the present disclosure. The insulating film 118 corresponds to a specific example of the "insulating layer" or the "first insulating layer" of the present disclosure.

[0097] The wiring 206 and 250 and the like are electrically connected to the electrode 116 and the storage electrode 114, and a desired potential is applied to the electrode 216 and the storage electrode 214 using the wiring 206 and 250 and the like. The wiring 108 and 106 and the like are electrically connected to the electrode 110, and a desired potential is applied to the electrode 110 using these wiring 108 and 106 and the like. Further, the electrode 116 is connected to a floating diffusion section 322b provided in the semiconductor substrate 300 via the through electrode 120 and 302. Controlling the potential applied to the electrode 110 and the storage electrode 114 can store the electric charge generated by the photoelectric conversion film 112 in the photoelectric conversion film 112 and take out the electric charge to the floating diffusion section 322b via the electrode 116 and the through electrode 120 and 302. The storage electrode 114 can function as a charge storage electrode for attracting the electric charge generated by the photoelectric conversion film 112 according to the applied potential and storing the electric charge in the photoelectric conversion film 112. In order to effectively utilize the light incident on the pixel 100, the storage electrode 214 is preferably provided to have a larger area than that of the electrode 116 when viewed from above the light receiving surface.

[0098] The photoelectric conversion section PD1 and the photoelectric conversion section PD2 adjacent to each other in the normal direction of the semiconductor substrate 300 are configured so that the electrode 110 of the photoelectric conversion section PD1 and the electrode 210 of the photoelectric conversion section PD2 oppose each other. That is, the layer stack order of the plurality of layers included in the photoelectric conversion section PD1 and the layer stack order of the plurality of layers included in the photoelectric conversion section PD2 and corresponding to the plurality of layers included in the photoelectric conversion section PD1 are symmetrical with respect to the bonding surface S as a reference. The electrode 116 of the photoelectric conversion section PD1 and the electrode 216 of the photoelectric conversion section PD2 are configured to oppose each other in the normal direction of the semiconductor substrate 300. The through electrode 120 is configured at a position opposing the electrode 210 in the normal direction of the semiconductor substrate 300.

[0099] The photoelectric conversion films 112 and 212 can be formed using an organic material (organic photoelectric conversion film) or an inorganic material (inorganic photoelectric conversion film). For example, in the case where the photoelectric conversion film is formed using an organic material, one can be selected from among the following four forms: (a) a P-type organic semiconductor material, (b) an N-type organic semiconductor material, (c) a stacked structure of at least two of a layer of a P-type organic semiconductor material, a layer of an N-type organic semiconductor material, and a mixed layer of a P-type organic semiconductor material and an N-type organic semiconductor material (bulk hetero structure), and (d) a mixed layer of a P-type organic semiconductor material and an N-type organic semiconductor material. The photoelectric conversion film using an organic material also includes a stacked structure in which an electron-blocking / buffering film, a photoelectric conversion film, a hole-blocking film, a hole-blocking / buffering film, and a work function adjusting film are stacked on an electrode, and the like.

[0100] Specific examples of the P-type organic semiconductor material include naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, pentacene derivatives, quinacridone derivatives, coumarin derivatives, pyrromethene derivatives, pyran derivatives, phenoxazone derivatives, thiophene derivatives, thienothiophene derivatives, benzothiophene derivatives, benzothienobenzothiophene (BTBT) derivatives, dinaphthothienothiophene (DNTT) derivatives, dianthrathienothiophene (DATT) derivatives, benzo bisbenzothiophene (BBBT) derivatives, naphtho bisbenzothiophene (NBBT), thieno bisbenzothiophene (TBBT) derivatives, dibenzothieno bisbenzothiophene (DBTBT) derivatives, dithienobenzodithiophene (DTBDT) derivatives, dibenzothienodithiophene (DBTDT) derivatives, benzodithiophene (BDT) derivatives, naphthodithiophene (NDT) derivatives, anthrathienodithiophene (ADT) derivatives, tetracene dithiophene (TDT) derivatives, pentacene dithiophene (PDT) derivatives, triallylamine derivatives, carbazole derivatives, triphenylene derivatives, fluoranthene derivatives, phthalocyanine derivatives, subphthalocyanine derivatives, subporphyrin derivatives, metal complexes having a heterocyclic compound as a ligand, polythiophene derivatives, polybenzothiadiazole derivatives, polyfluorene derivatives, and the like.

[0101] Further, examples of the N-type organic semiconductor material include fullerenes and fullerene derivatives (for example, fullerenes (high-order fullerenes) such as C60, C70, and C74, endohedral fullerenes, and the like) or fullerene derivatives (for example, fluorinated fullerenes, phenyl-C 61molecule, an inorganic metal oxide capable of transmitting light, and the like. More specific examples of the N-type organic semiconductor material can include a heterocyclic compound containing a nitrogen atom, an oxygen atom, and a sulfur atom. Examples of the heterocyclic compound include a pyridine derivative, a pyrromethene derivative, a pyrazine derivative, a pyrimidine derivative, a triazine derivative, a quinoline derivative, a quinoxaline derivative, an isoquinoline derivative, a coumarin derivative, a pyran derivative, a phenoxazone derivative, a pyrene derivative, an acridine derivative, a phenoxazine derivative, a phenanthroline derivative, a tetrazole derivative, a pyrazole derivative, an imidazole derivative, a thiazole derivative, an oxazole derivative, an imidazole derivative, a benzimidazole derivative, a benzotriazole derivative, a benzoxazole derivative, a carbazole derivative, a benzofuran derivative, a dibenzofuran derivative, a subporphyrazine derivative, a polyphenylenevinylene derivative, a polybenzothiadiazole derivative, an organic molecule having a polyfluorene derivative in a part of a molecular skeleton, an organometallic complex, a subphthalocyanine derivative, and the like. Furthermore, examples of a group contained in a fullerene derivative and the like can include a branched or cyclic alkyl group or a phenyl group, a group containing a straight chain or condensed aromatic compound, a group containing a halide, a partially fluorinated alkyl group, a perfluorinated alkyl group, a silylalkyl group, a silylalkoxy group, an arylsilyl group, an arylsulfanyl group, an alkylsulfanyl group, an arylsulfonyl group, an alkylsulfonyl group, an arylsulfenyl group, an alkylsulfenyl group, an amino group, an alkylamino group, an arylamino group, a hydroxyl group, an alkoxy group, an acylamino group, an acyloxy group, a carbonyl group, a carboxyl group, a carboxamide group, a carbonylalkoxy group, an acyl group, a sulfonyl group, a cyano group, a nitro group, a group containing a chalcogenide, a phosphine group, a phosphonate group, and a derivative thereof. Note that the film thickness of the photoelectric conversion film formed using the organic material is not limited, and can be, for example, 1 x 10 -8 m to 5 x 10 -7 m, preferably 2.5 x 10 -8 m to 3 x 10 -7 m, more preferably 2.5 x 10 -8 m to 2 x 10 -7 m. In addition, in the above description, the organic semiconductor material is classified into P-type and N-type, in which the P-type refers to easy transport of a hole and the N-type refers to easy transport of an electron. That is, in the organic semiconductor material, unlike the inorganic semiconductor material, the type is not limited to an explanation in which a hole or an electron is a majority carrier of a thermally excited carrier.

[0102] Further, in the case where the photoelectric conversion films 112 and 212 are formed using an inorganic material, examples of the inorganic semiconductor material can include crystalline silicon, amorphous silicon, microcrystalline silicon, crystalline selenium, amorphous selenium, chalcopyrite compounds such as CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2, and AgInSe2, Group III-V compounds such as GaAs, InP, AlGaAs, InGaP, AlGaInP, and InGaAsP, and compound semiconductors such as CdSe, CdS, In2Se3, In2S3, Bi2Se3, Bi2S3, ZnSe, ZnS, PbSe, and PbS. In addition, in the present embodiment, quantum dots composed of the above-described materials can also be used as the photoelectric conversion films 112 and 212.

[0103] The photoelectric conversion films 112 and 212 can be formed using a polymer such as phenylene ethylene, fluorene, carbazole, indole, pyrene, pyrrole, methylpyridine, thiophene, acetylene, or diacetylene, or a derivative thereof

[0104] In order to detect blue light and green light, in the photoelectric conversion films 112 and 212, for example, it can be preferable to use a metal complex pigment, a rhodamine-based pigment, a cyanine-based pigment, a merocyanine-based pigment, a phenylxanthene-based pigment, a triphenylmethane-based pigment, a rhodocyanine-based pigment, a xanthene-based pigment, a macrocyclic azulene-based pigment, an azulene-based pigment, naphthoquinone, an anthraquinone-based pigment, a chain compound having a fused polycyclic aromatic series and an aromatic ring or a fused heterocyclic compound such as anthracene and pyrene, a quinoline having a squarylium group and a croconin methylene as a bond chain, a heterocycle containing two nitrogens such as benzothiazole and benzoxazole, or a pigment similar to a cyanine-based pigment in which a squarylium group and a croconin methylene are connected, and the like. In addition, as the above-described metal complex dye, it is preferable to be a dithiol metal complex-based pigment, a metal phthalocyanine pigment, a metal porphyrin pigment, or a ruthenium complex pigment, and particularly preferable to be a ruthenium complex pigment, but the metal complex dye is not limited thereto.

[0105] In the case where the photoelectric conversion films 112 and 212 are used as photoelectric conversion films for detecting red light, the photoelectric conversion films can contain a phthalocyanine-based dye, a subphthalocyanine-based dye (subphthalocyanine derivative), or the like.

[0106] As described above Figure 3 and Figure 4As illustrated, for example, a sealing film 104 including SiN or the like is provided above the photoelectric conversion section PD1, similarly to the sealing film 204. Examples of the material of the sealing film 104 can include Al2O3 or the like that allows light to pass therethrough. In addition to Al2O3, SiO2, Si3N4, SiON, SiC, SiCO, or the like can be used as the material of the sealing film 104, and the material of the sealing film 104 is not particularly limited. Furthermore, as illustrated in FIG. 1, a high refractive index layer (not illustrated) including an inorganic film such as a silicon nitride film, a silicon oxynitride film, or a silicon carbide (SiC) is provided on the sealing film 104. In addition, an on-chip lens 102 (102a and 102b) is provided on the high refractive index layer for each pixel 100. The on-chip lens 102 can be formed using a silicon nitride film or a resin-based material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a silicone resin, for example. Figure 3 and Figure 4 As illustrated, a high refractive index layer (not illustrated) including an inorganic film such as a silicon nitride film, a silicon oxynitride film, or a silicon carbide (SiC) is provided on the sealing film 104. In addition, an on-chip lens 102 (102a and 102b) is provided on the high refractive index layer for each pixel 100. The on-chip lens 102 can be formed using a silicon nitride film or a resin-based material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a silicone resin, for example.

[0107] As described above, the pixel 100 has a stacked structure in which the PD1, the PD2, and the PD3 that detect light of three colors are stacked. That is, it can be said that the pixel 100 is a longitudinal split type solid-state imaging device that performs photoelectric conversion of blue light by the photoelectric conversion film 112 (photoelectric conversion section PD1) formed above the semiconductor substrate 300, performs photoelectric conversion of green light by the photoelectric conversion film 212 (photoelectric conversion section PD2) provided below the photoelectric conversion section PD1, and performs photoelectric conversion of red light by the photoelectric conversion section PD3 provided inside the semiconductor substrate 300.

[0108] The pixel 100 is not limited to the above-described longitudinal split type stacked structure. For example, green light can perform photoelectric conversion by the photoelectric conversion film 112 (photoelectric conversion section PD1) formed above the semiconductor substrate 300, and blue light can perform photoelectric conversion by the photoelectric conversion film 212 (photoelectric conversion section PD2) provided below the photoelectric conversion section PD1. In addition, the pixel 100 can further include a photoelectric conversion film that detects infrared rays. Furthermore, the pixel 100 can have a structure in which the photoelectric conversion section PD1 including the photoelectric conversion film 112 provided above the semiconductor substrate 300 and the photoelectric conversion sections PD2 and PD3 provided inside the semiconductor substrate 300 are stacked. That is, the pixel 100 can have a structure in which the two photoelectric conversion sections PD2 and PD3 are stacked inside the semiconductor substrate 300.

[0109] (Photoelectric conversion section and pixel circuit)

[0110] Next, a description will be given of the cross-sectional configuration of the photoelectric conversion sections PD1, PD2, and PD3 included in the pixel 100 and the circuit configuration of the pixel circuit connected thereto with reference to Figure 5 and Figure 6 FIGS. 10A and 10B. Figure 5A cross-sectional configuration example of the photoelectric conversion section PD1 and a circuit configuration example of a pixel circuit connected to the photoelectric conversion section PD1 are shown. Note that the photoelectric conversion section PD2 has a cross-sectional configuration similar to that of the photoelectric conversion section PD1. The pixel circuit connected to the photoelectric conversion section PD2 has a circuit configuration similar to that of the pixel circuit connected to the photoelectric conversion section PD1. Figure 6 A cross-sectional configuration example of the photoelectric conversion section PD3 and a circuit configuration example of a pixel circuit connected to the photoelectric conversion section PD3 are shown.

[0111] The photoelectric conversion section PD1 includes the electrode 110, the electrode 116, and the photoelectric conversion film 112 interposed between the electrode 110 and the electrode 116. The photoelectric conversion section PD1 includes the accumulation electrodes 114a and 114b in contact with the photoelectric conversion film 112 via the insulating film 118. As shown in Figure 5 , in a case where the pixel 100 is observed from above the light-receiving surface, the accumulation electrodes 114a and 114b are configured to be line-symmetrical via the electrode 116.

[0112] The electrode 116 is electrically connected to the pixel circuit (amplification transistor TR amp , selection transistor TR sel , and reset transistor TR rst ) through a wiring. Specifically, the electrode 116 is electrically connected to one of the drain / source of the reset transistor TR rst for resetting the stored charge via a wiring or the like. The gate of the reset transistor TR rst is electrically connected to a reset signal line, and is further electrically connected to the vertical drive circuit section 32. The other of the drain / source of the reset transistor TR rst (not on the side connected to the electrode 116) is electrically connected to a power supply circuit VDD.

[0113] The electrode 116 is electrically connected to the gate of the amplification transistor TR amp that amplifies the charge and outputs the amplified charge as a pixel signal via a wiring. One of the source / drain of the amplification transistor TR amp is electrically connected to one of the source / drain of the selection transistor TR sel that outputs the pixel signal to the vertical signal line 44 according to a selection signal via a wiring. The other of the source / drain of the amplification transistor TR amp (not on the side connected to the selection transistor TR sel ) is electrically connected to the power supply circuit VDD.

[0114] The other of the source / drain of the selection transistor TR sel (not on the side connected to the amplification transistor TR ampOne side) is electrically connected to the vertical signal line 44, and further electrically connected to the column signal processing circuit section 34. Additionally, the selection transistor TR sel The gate is electrically connected to the pixel drive line 42 and further electrically connected to the vertical drive circuit section 32. The accumulation electrodes 114a and 114b are electrically connected to the vertical drive circuit section 32 via wiring.

[0115] Next, the cross-sectional structure of the photoelectric conversion unit PD3 and the pixel circuit connected to the photoelectric conversion unit PD will be explained. For example... Figure 6 As shown, the photoelectric conversion unit PD3 is connected via wiring to the pixel circuit (amplifier transistor TR) disposed within the semiconductor substrate 300. amp Transmission transistor TR trs Reset transistor TR rst and select transistor TR sel Specifically, one side of the photoelectric conversion unit PD3 is electrically connected to the charge transfer transistor TR via wiring. trs One of the source / drain terminals. Transmission transistor TR trs The other of the source / drain terminals (on the side not connected to the photoelectric conversion unit PD3) is electrically connected to the reset transistor TR via wiring. rst One of the source / drain terminals. Transmission transistor TR trs The gate of the transistor is electrically connected to the pixel drive line 42 and further connected to the vertical drive circuit section 32. The reset transistor TR rst The other of the source / drain (when not connected to the transfer transistor TR) trs The side of the transistor (TR) is electrically connected to the power supply circuit VDD. rst The gate is electrically connected to the pixel drive line 42 and further connected to the vertical drive circuit section 32.

[0116] Transmission transistor TR trs The other of the source / drain terminals (on the side not connected to the photoelectric conversion unit PD3) is also electrically connected via wiring to the amplifying (converting) charge transistor TR, which outputs the amplified charge as a pixel signal. amp The gate of the amplifying transistor TR. amp One of the source / drain terminals is electrically connected via wiring to the selection transistor TR, which outputs the pixel signal to the vertical signal line 44 according to the selection signal. sel One of the source / drain terminals. Then, the amplifying transistor TR... amp The other of the source / drain (when not connected to the select transistor TR) sel The side of the transistor (TR) is electrically connected to the power supply circuit VDD. selthe other of the source / drain (on the side not connected to the amplification transistor TR amp The gate of the selection transistor TR sel is electrically connected to the pixel drive line 42 and further electrically connected to the vertical drive circuit section 32.

[0117] [Manufacturing method]

[0118] Next, a description will be given of a manufacturing method of the solid-state imaging device 1 with reference to Figures 7-15 is a view for explaining the manufacturing method of the solid-state imaging device 1. Figures 7-15 is a view for explaining the manufacturing method of the solid-state imaging device 1.

[0119] First, a semiconductor substrate 400 in which the photoelectric conversion sections PD1 and PD2 and the pixel circuit, the wiring, and the through electrode corresponding to the photoelectric conversion sections PD1 and PD2, and the like are formed is prepared using an SOI substrate, a support substrate, or the like. The semiconductor substrate 400 is a substrate that includes the electrode 216, the photoelectric conversion film 212, and the electrode 210 in this order from the semiconductor substrate 300 side on the semiconductor substrate 300. The semiconductor substrate 400 corresponds to a specific example of the “second substrate” of the present disclosure. The semiconductor substrate 300 corresponds to a specific example of the “second semiconductor substrate” of the present disclosure. The sealing film 204 that seals the electrode 210 is formed on the surface of the semiconductor substrate 400. Thus, the semiconductor substrate 400 shown on the lower side of Figure 7 is obtained.

[0120] Further, a semiconductor substrate 500 in which a part of the photoelectric conversion section PD1 (the electrode 110 and the photoelectric conversion film 112), the wiring, and the like are formed is prepared using an SOI substrate, a support substrate, or the like. The semiconductor substrate 500 is a substrate that includes the photoelectric conversion film 112 and the electrode 110 in this order from the semiconductor substrate 150 side on the semiconductor substrate 150. The semiconductor substrate 500 corresponds to a specific example of the “first substrate” of the present disclosure. For example, the semiconductor substrate 150 is an SOI substrate, a support substrate, or the like and corresponds to a specific example of the “first semiconductor substrate” of the present disclosure. The sealing film 119 that seals the electrode 110 is formed on the surface of the semiconductor substrate 500. Thus, the semiconductor substrate 500 shown on the upper side of Figure 7 is obtained.

[0121] Next, the semiconductor substrates 400 and 500 are placed in the chamber CM of the plasma CVD device. For example, as shown in Figure 8As shown in (A) of FIG. 4, the plasma CVD apparatus is a parallel-plate type plasma generator in which electrodes El and E2 are arranged to face each other with a predetermined gap therebetween. At this time, the semiconductor substrate 500 is arranged on the electrode El connected to the AC power source PW so that the electrode 110 faces the electrode E2. Further, the semiconductor substrate 400 is arranged on the electrode E2 grounded so that the electrode 210 faces the electrode El.

[0122] After the chamber CM is evacuated, a predetermined bonding treatment is performed on the surfaces of the semiconductor substrates 400 and 500. For example, as shown in (A) of FIG. 5, the predetermined gas GS (e.g., C2H2) is supplied into the chamber CM while the AC power is applied between the electrodes El and E2, thereby generating plasma in the chamber CM to form carbon films 205a and 205b on the surfaces of the semiconductor substrates 400 and 500. At this time, the carbon films 205a and 205b are generated by low-temperature plasma; therefore, it is not necessary to heat the semiconductor substrates 400 and 500 to a high temperature, and for example, the semiconductor substrates 400 and 500 are heated to a low temperature of about 150°C or less. The dangling bonds are formed on the surfaces of the carbon films 205a and 205b immediately after the formation of the carbon films 205a and 205b. Figure 8 As shown in (B) of FIG. 4, while the AC power is applied between the electrodes El and E2, the predetermined gas GS (e.g., C2H2) is supplied into the chamber CM, thereby generating plasma in the chamber CM to form the carbon films 205a and 205b on the surfaces of the semiconductor substrates 400 and 500. At this time, the carbon films 205a and 205b are generated by low-temperature plasma; therefore, it is not necessary to heat the semiconductor substrates 400 and 500 to a high temperature, and for example, the semiconductor substrates 400 and 500 are heated to a low temperature of about 150°C or less. The dangling bonds are formed on the surfaces of the carbon films 205a and 205b immediately after the formation of the carbon films 205a and 205b.

[0123] For example, after the gas GS is supplied into the chamber CM and the power supply to the electrodes El and E2 is stopped, as shown in (A) of FIG. 5, the semiconductor substrates 400 and 500 are arranged to face each other with the electrodes 110 and 210 facing each other. At this time, the carbon films 205a and 205b face each other, thereby bonding the semiconductor substrates 400 and 500 to each other. At this time, the dangling bonds are formed on the surfaces of the carbon films 205a and 205b, which enables so-called room-temperature bonding. Figure 8 As shown in (C) of FIG. 4, the semiconductor substrates 400 and 500 are bonded to each other in a vacuum state so that the electrodes 110 and 210 face each other. At this time, the carbon films 205a and 205b face each other, thereby bonding the semiconductor substrates 400 and 500 to each other. At this time, the dangling bonds are formed on the surfaces of the carbon films 205a and 205b, which enables so-called room-temperature bonding. The carbon film 205 in which the carbon films 205a and 205b are laminated exists on the bonding surface S of the semiconductor substrates 400 and 500 bonded to each other. Figure 10 The cross-sectional configuration of the semiconductor substrates 400 and 500 bonded together as described above is exemplified.

[0124] Note that the semiconductor substrates 400 and 500 can be bonded together outside the chamber CM. In this case, for example, as shown in (A) of FIG. 6, the carbon film 205a is formed on the surface of the semiconductor substrate 500, and, as shown in (B) of FIG. 6, the carbon film 205b is formed on the surface of the semiconductor substrate 400. Thereafter, as shown in (C) of FIG. 6, the semiconductor substrates 400 and 500 are bonded together outside the chamber CM. Figure 9 As shown in (A) of FIG. 4, the carbon film 205a is formed on the surface of the semiconductor substrate 500, and, as shown in (B) of FIG. 4, the carbon film 205b is formed on the surface of the semiconductor substrate 400. Thereafter, as shown in (C) of FIG. 4, the semiconductor substrates 400 and 500 are bonded together in the chamber CM. Figure 9 As shown in (A) of FIG. 4, the carbon film 205a is formed on the surface of the semiconductor substrate 500, and, as shown in (B) of FIG. 4, the carbon film 205b is formed on the surface of the semiconductor substrate 400. Thereafter, as shown in (C) of FIG. 4, the semiconductor substrates 400 and 500 are bonded together in the chamber CM. Figure 9 As shown in (A) of FIG. 4, the carbon film 205a is formed on the surface of the semiconductor substrate 500, and, as shown in (B) of FIG. 4, the carbon film 205b is formed on the surface of the semiconductor substrate 400. Thereafter, as shown in (C) of FIG. 4, the semiconductor substrates 400 and 500 are bonded together in the chamber CM.

[0125] Moreover, when the semiconductor substrates 400 and 500 are bonded to each other, it is sufficient to form a carbon film on the surface of one of the semiconductor substrates 400 and 500. Thus, for example, as shown in (A) of FIG. 10, after forming the carbon film 205a only on the surface of the semiconductor substrate 500, the semiconductor substrate 500 on which the carbon film 205a is formed and the semiconductor substrate 400 on which the carbon film 205b is not formed can be bonded to each other. Moreover, for example, as shown in (B) of FIG. 10, after forming the carbon film 205b only on the surface of the semiconductor substrate 400, the semiconductor substrate 500 on which the carbon film 205a is not formed and the semiconductor substrate 400 on which the carbon film 205b is formed can be bonded to each other. In these cases, the carbon film 205a or the carbon film 205b exists as the carbon film 205 on the bonding surface S of the semiconductor substrates 400 and 500 bonded to each other. Figure 9 Figure 9

[0126] After the bonding of the semiconductor substrates 400 and 500 is completed, the semiconductor substrate 150 is removed to expose a portion of the insulating film 118a and the photoelectric conversion film 112 (a portion of (a) of FIG. 11). The semiconductor substrate 150 is, for example, an SOI substrate, a support substrate, or the like. The insulating film 118a corresponds to a portion of the insulating film 118. Next, the accumulation electrode 114 is formed in the region in which the insulating film 118a is exposed, the electrode 116 is formed to cover the region in which the photoelectric conversion film 112 is exposed, and the insulating film 118b is formed in the region in which the accumulation electrode 114 and the electrode 116 are not formed (a portion of (b) of FIG. 11). Thus, the insulating film 118 including the insulating films 118a and 118b is formed. Figure 11 Figure 12

[0127] Next, the groove portion H reaching from the electrode 116 to the electrode 216 is formed (a portion of (a) of FIG. 12). This causes a portion of the electrode 216 to be exposed on the bottom surface of the groove portion H. Next, for example, after the insulating film 117 is formed on the side surface of the groove portion H using CVD, the groove portion H is filled with a conductive material to form the through electrode 120 and the electrode 116 (a portion of (b) of FIG. 12). Figure 13 Figure 14 Figure 15

[0128] [Effects]

[0129] Next, a description will be given of the effects of the solid-state imaging device 1.

[0130] ​​​​​​​In recent years, in a CCD image sensor and a CMOS image sensor, with a decrease in pixel size, the amount of light incident on a unit pixel decreases. For this reason, the sensitivity decreases and the S / N (signal / noise) ratio decreases. In addition, in the above-described various image sensors, a configuration in which pixels that detect red light, green light, and blue light using primary color filters are arranged on a plane (for example, a Bayer arrangement) is widely used. In the case of such a configuration, for example, in a pixel that detects red light, green light and blue light are difficult to pass through the color filter included in the pixel; thus, photoelectric conversion of the green light and the blue light is not performed in the pixel, that is, the green light and the blue light are not detected. Therefore, in the case of the above-described configuration, in each pixel, light of one specific color is detected, and light of other colors is not detectable. For this reason, it cannot be said that the light incident on each pixel is sufficiently utilized. In other words, it can be said that a loss occurs in terms of pixel sensitivity.

[0131] A solution to the above-described situation can be an image sensor in which three layers of photoelectric conversion films capable of performing photoelectric conversion by red light, green light, and blue light are stacked in a vertical direction in a unit pixel to allow detection of light of three colors by one unit pixel. In addition, another image sensor that allows detection of light of three colors by one unit pixel can be an image sensor including a silicon substrate on which two photodiodes (PDs) that detect red light and blue light, respectively, are stacked, and a photoelectric conversion film provided above the silicon substrate and capable of performing photoelectric conversion by green light.

[0132] In addition, a specific circuit configuration for taking out a pixel signal in an image sensor including a silicon substrate on which two PDs are stacked and a photoelectric conversion film provided above the silicon substrate is described below. For example, a back-illuminated structure in which a circuit formation layer in which the above-described circuit is formed is formed on a side of the image sensor opposite to a light-receiving surface (light incident side) can be employed. In addition, a structure in which a semiconductor layer for storing and transferring electric charges obtained by photoelectric conversion and a storage electrode opposite to the above-described semiconductor layer with an insulating film interposed therebetween are provided directly below a photoelectric conversion film provided above the silicon substrate can be employed.

[0133] In a case where the organic photoelectric conversion layer is formed in a back surface irradiation type, no circuit, wiring, or the like is formed between the inorganic photoelectric conversion portion and the organic photoelectric conversion portion, which can shorten the distance between the inorganic photoelectric conversion portion and the organic photoelectric conversion portion in the same pixel. As a result, the F number dependence of each color and the sensitivity variation between each color can be suppressed. Further, in a case where the charge accumulation electrode is disposed to face the photoelectric conversion layer with the insulating layer interposed therebetween, when the photoelectric conversion portion is irradiated with light and the light performs photoelectric conversion by passing through the photoelectric conversion portion, the charge of the photoelectric conversion layer can be stored. Thus, at the start of exposure, the charge storage portion can be completely depleted and the charge can be eliminated. As a result, the occurrence of a phenomenon in which kTC noise increases and random noise deteriorates, resulting in deterioration of image quality at the time of imaging, can be suppressed.

[0134] Incidentally, in the above-described solid-state imaging device, in a case where a plurality of photoelectric conversion portions having mutually different wavelength selectivity are provided for each pixel, in order to obtain the charge generated by each photoelectric conversion portion as a pixel signal, a wiring connected to each photoelectric conversion portion needs to be provided. The wiring is one of important elements of effective output and transmission of the pixel signal. However, in the prior proposals, the preferred configuration and position of the pixel transistor and the wiring have not been specifically studied. Further, even in a case where the configuration and position of the pixel transistor have been disclosed, such disclosure provides an effective configuration and an effective position that allow effective output and transmission of the pixel signal, and it is difficult to say that an increase in manufacturing cost can be suppressed.

[0135] On the other hand, in the present embodiment, the through electrode 120 is formed in contact with the electrodes 116 and 216 of the plurality of photoelectric conversion portions PD1 and PD2 stacked on the semiconductor substrate 300. Thus, as compared to a case where the charge generated by each of the photoelectric conversion portions PD1 and PD2 is obtained via a wiring provided for each of the photoelectric conversion portions PD1 and PD2 or a wiring routed in the in-plane direction of the stacked surface, the charge generated by each of the photoelectric conversion portions PD1 and PD2 is obtained via the common through electrode 120, which makes it possible to simplify the wiring layout and shorten the wiring distance. Thus, the pixel signal can be effectively output and transmitted.

[0136] In the present embodiment, the through electrode 120 is formed at a position opposite to the electrode 216 in the normal line direction of the semiconductor substrate 300. This makes it possible to simplify the wiring layout and shorten the wiring distance as compared to a case where the charge generated by each of the photoelectric conversion portions PD1 and PD2 is obtained via a wiring provided for each of the photoelectric conversion portions PD1 and PD2 or a wiring routed in the in-plane direction of the stacked surface. Thus, the pixel signal can be effectively output and transmitted.

[0137] In this embodiment, the through electrode 302 connected to the through electrode 120 is formed to extend to a layer in which a pixel circuit is formed. This makes it possible to simplify the layout of wiring and shorten the wiring distance, as compared with a case where the charge generated by each of the photoelectric conversion sections PD1 and PD2 is obtained via a wiring provided for each of the photoelectric conversion sections PD1 and PD2 or via a wiring routed in the in-plane direction of the laminated surface. Thus, the pixel signal can be effectively output and transmitted.

[0138] In this embodiment, the photoelectric conversion sections PD1 and PD2 adjacent to each other in the normal line direction of the semiconductor substrate 300 are configured so that the electrodes 110 and 210 face each other. In the manufacturing process, the semiconductor substrate 500 including a part of the photoelectric conversion section PD1 and the semiconductor substrate 400 including the photoelectric conversion section PD2 are attached to each other so that the electrodes 110 and 210 face each other, so that this configuration can be formed. In the case of using such attachment, for example, an oxide semiconductor layer and the like which requires high-temperature processing can be formed before the photoelectric conversion films 112 and 212 which require low-temperature processing are formed. Thus, a solid-state imaging device 1 using an oxide semiconductor layer can be implemented.

[0139] In this embodiment, the sealing film 204 which seals the electrode 210 and the sealing film 119 which seals the electrode 110 have a bonding surface S which is bonded to each other by a predetermined bonding process. In the manufacturing process, the semiconductor substrate 500 on which the sealing film 119 is formed and the semiconductor substrate 400 on which the sealing film 204 is formed are attached to each other by bonding the sealing films 119 and 204, so that this configuration can be formed. Here, in the case where the sealing films 119 and 204 each include an inorganic oxide film, an inorganic nitride film, or an inorganic oxynitride film, a carbon film (205a and 205b) is formed on the surface of at least one of the sealing film 119 or the sealing film 204, and the carbon films (205a and 205b) are attached to each other, which can attach the semiconductor substrates 400 and 500 to each other.

[0140] In this embodiment, the through electrode 120 is configured to include a columnar conductive member which penetrates the same surface as the bonding surface S and which is not subjected to a bonding process. In the manufacturing process, a groove portion is formed on the semiconductor substrates 400 and 500 which are attached to each other, and the columnar conductive member is embedded in the formed groove portion, so that this configuration can be formed. For example, as compared with a case where a pad electrode is formed in each of the semiconductor substrates 400 and 500 and the two pad electrodes are attached to each other to provide a through electrode, this can form a smaller through electrode 120. Thus, the pixel signal can be effectively output and transmitted.

[0141] In the present embodiment, the through electrode 120 is formed in contact with the electrodes 116 and 216 of the plurality of photoelectric conversion sections PD1 and PD2 stacked on the semiconductor substrate 300. Therefore, compared to a case where the electric charges generated by each of the photoelectric conversion sections PD1 and PD2 are obtained via a wiring provided for each of the photoelectric conversion sections PD1 and PD2 or via a wiring routed in the in-plane direction of the stacked surface, the electric charges generated by each of the photoelectric conversion sections PD1 and PD2 are obtained via the common through electrode 120, which makes it possible to simplify the wiring layout and shorten the wiring distance. Therefore, it is possible to efficiently output and transfer the pixel signals.

[0142] <2. Modified examples>

[0143] Hereinafter, a description will be given of modified examples of the solid-state imaging device 1 and the manufacturing method of the solid-state imaging device 1 according to the above-described embodiments.

[0144] [Modified example A]

[0145] In the above-described embodiments, for example, as shown in Figure 16 , the electrode 210 and the electrode 110 can be joined to each other. At this time, the electrode 210 and the electrode 110 are not sealed by the sealing films 204 and 119, and have a joining surface S joined to each other by a predetermined joining process. The carbon film 205 that joins the sealing film 204 and the sealing film 119 together is provided on the joining surface S.

[0146] At this time, in a case where the electrode 210 and the electrode 110 each include a transparent conductive film, the semiconductor substrates 400 and 500 can be attached to each other by attaching the electrode 210 and the electrode 110 to each other after performing a predetermined joining process on a surface of at least one of the electrode 210 or the electrode 110 that faces the other. Further, in a case where the electrode 210 and the electrode 110 each include a transparent conductive film, carbon films (205a and 205b) are formed on a surface of at least one of the electrode 210 or the electrode 110, and the carbon films (205a and 205b) are attached to each other, which can attach the semiconductor substrates 400 and 500 to each other.

[0147] [Modified example B]

[0148] In the above-described embodiments and modified examples thereof, for example, as shown in Figure 17 and Figure 18 , a groove portion 104A can be provided in the sealing film 104. The groove portion 104A is provided at a position in the sealing film 104 that opposes the on-chip lens 102, and the on-chip lens 102 is attached to a bottom surface of the groove portion 104A. Such a configuration can adjust the distance between the on-chip lens 102 and each of the photoelectric conversion sections PD1, PD2, and PD3 by adjusting the depth of the groove portion 104A.

[0149] [Modified example C]

[0150] In this embodiment and its variants, for example, as shown in Figure 19 and Figure 20 shown, the oxide semiconductor layer 142 that allows light to pass through can be provided between the insulating film 218 and the photoelectric conversion film 212. At this time, the accumulation electrode 214 is arranged to face the oxide semiconductor layer 142 with the insulating film 218 interposed therebetween. Likewise, for example, as shown in Figure 19 and Figure 20 shown, the oxide semiconductor layer 140 that allows light to pass through can be provided between the insulating film 118 and the photoelectric conversion film 112. At this time, the accumulation electrode 114 is arranged to face the oxide semiconductor layer 140 with the insulating film 118 interposed therebetween. The oxide semiconductor layer 142 is in contact with the photoelectric conversion film 212 and is arranged to face the electrode 210 with the photoelectric conversion film 212 interposed therebetween. The oxide semiconductor layer 140 is in contact with the photoelectric conversion film 112 and is arranged to face the electrode 110 with the photoelectric conversion film 112 interposed therebetween.

[0151] Examples of the material of the oxide semiconductor layers 140 and 142 include, as a tin oxide-based material, SnO2(doped with a dopant) and tin oxide doped with a dopant such as zinc tin oxide and the like, and, as a zinc oxide-based material, aluminum-zinc oxide (e.g., AZO), gallium-zinc oxide (e.g., GZO), indium-zinc oxide (e.g., IZO), IGZO, and ITZO, and the like. Examples of the material of the oxide semiconductor layers 140 and 142 can include InSbO4, ZnMgO, CuInO2, MgIn2O4, CdO, GeO, TiO2, and the like.

[0152] Providing the oxide semiconductor layers 140 and 142 in this way can more effectively store electric charges.

[0153] [Variant D]

[0154] In the above embodiment and its variants, for example, as shown in Figure 21 and Figure 22 shown, the through electrode 120 can include a pair of pad electrodes 120a and 120b that are attached to each other in the same plane as the bonding surface S. In this case, during manufacture, the columnar conductive member provided on the photoelectric conversion film 112 side and the pad electrode 120a and the columnar conductive member provided on the photoelectric conversion film 212 side and the pad electrode 120b are attached to each other by attaching the pad electrodes 120a and 120b, thereby enabling the through electrode 120 to be formed. In the case where sufficient alignment accuracy for attaching the pad electrode 120a and the pad electrode 120b together is obtained during manufacture, the through electrode 120 can be configured by this kind of stacked body.

[0155] <3. Applicable Cases>

[0156] The solid-state imaging device 1 according to any one of the above-described embodiments and modifications thereof is applicable to all types of electronic apparatuses using a solid-state imaging element for an image capturing section, including an imaging device such as a digital camera or a video camera, a mobile terminal device having an imaging function, and a copying machine using a solid-state imaging element for an image readout section. Further, the embodiments of the present disclosure are applicable to a robot, a drone, a car, a medical device (an endoscope), and the like including the solid-state imaging device 1. Note that the solid-state imaging device 1 according to any one of the above-described embodiments and modifications thereof can be formed as a single chip, and can be implemented in the form of a module having an imaging function in which an imaging section and a signal processor or an optical system are packaged in one unit. Hereinafter, an example of an electronic apparatus 700 including an imaging device 702 having the solid-state imaging device 1 according to any one of the above-described embodiments and modifications thereof will be described with reference to Figure 23 An example of an electronic apparatus 700 including an imaging device 702 having the solid-state imaging device 1 according to any one of the above-described embodiments and modifications thereof will be described with reference to Figure 23 is an explanatory diagram illustrating an example of an electronic apparatus 700 including an imaging device 702 having the solid-state imaging device 1 according to any one of the above-described embodiments and modifications thereof.

[0157] As Figure 23 indicated, the electronic apparatus 700 includes the imaging device 702, an optical lens 710, a shutter mechanism 712, a drive circuit unit 714, and a signal processing circuit unit 716. The optical lens 710 forms an image of image light (incident light) from a subject on an imaging surface of the imaging device 702. This allows signal charges to be stored in the solid-state imaging device 1 of the imaging device 702 for a certain period. The shutter mechanism 712 is opened or closed to control a period during which the imaging device 702 is irradiated with light and a light-shield period. The drive circuit unit 714 supplies a drive signal for controlling a signal transfer operation of the imaging device 702, a shutter operation of the shutter mechanism 712, and the like to the imaging device 702 and the shutter mechanism 712. That is, the imaging device 702 performs signal transfer based on a drive signal (a timing signal) supplied from the drive circuit unit 714. The signal processing circuit unit 716 performs various types of signal processing. For example, the signal processing circuit unit 716 outputs an image signal subjected to signal processing to a storage medium (not shown) such as a memory or the like, or outputs the image signal to a display section (not shown).

[0158] In the present application example, the solid-state imaging device 1 according to any one of the above-described embodiments and modifications thereof is applicable to the electronic apparatus 700. This makes it possible to obtain a captured image having high sensitivity, and thus an electronic apparatus 700 having high sensitivity can be provided.

[0159] <4. Application Example>

[0160] [Application Example 1]

[0161] The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein can be implemented as a device installed on any type of mobile body such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, airplanes, unmanned aerial vehicles, ships, and robots.

[0162] Figure 24 This is a block diagram illustrating a schematic configuration example of a vehicle control system, which serves as an example of a mobile body control system to which the technology of this disclosure is applicable.

[0163] The vehicle control system 12000 includes multiple electronic control units connected via a communication network 12001. Figure 24 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a main system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and a comprehensive control unit 12050. Furthermore, as functional components of the comprehensive control unit 12050, a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0164] The drive system control unit 12010 controls the operation of devices related to the vehicle's drive system according to various programs. For example, the drive system control unit 12010 is a drive force generating device that generates the driving force of the vehicle, such as an internal combustion engine or a drive motor; a drive force transmission mechanism that transmits the driving force to the wheels; a steering mechanism that adjusts the vehicle's steering angle; and a control device such as a braking device that generates the vehicle's braking force.

[0165] The main system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the main system control unit 12020 is used as a control device for keyless entry systems, smart key systems, power windows, or various lights such as headlights, taillights, brake lights, automotive hazard lights, or fog lights. In this case, radio waves transmitted from a portable device or signals from various switches can be input to the main system control unit 12020 instead of buttons. The main system control unit 12020 receives the input radio waves or signals and controls the vehicle's door locking devices, power windows, lights, etc.

[0166] The vehicle exterior information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the vehicle exterior information detection unit 12030. The vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture an image of the outside of the vehicle and receives the captured image. The vehicle exterior information detection unit 12030 can perform object detection processing or distance detection processing, such as a person, a car, an obstacle, a sign, a word on a road, and the like, on the basis of the received image.

[0167] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of received light. The imaging unit 12031 can output the electrical signal as an image or as ranging information. In addition, the light received by the imaging unit 12031 can be visible light or invisible light such as infrared rays.

[0168] The vehicle interior information detection unit 12040 detects information inside the vehicle. For example, the vehicle interior information detection unit 12040 is connected to a driver state detection unit 12041 that detects the state of the driver. For example, the driver state detection unit 12041 includes a camera that captures the driver, and on the basis of detection information input from the driver state detection unit 12041, the vehicle interior information detection unit 12040 can calculate the degree of fatigue or concentration of the driver, or can determine whether the driver is dozing off.

[0169] The microcomputer 12051 can calculate a control target value of a driving force generation device, a steering mechanism, or a braking device on the basis of information inside and outside the vehicle obtained by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and can output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control to realize the function of an advanced driver assistance system (ADAS) including collision avoidance or mitigation of the vehicle, follow-up travel based on the distance between vehicles, vehicle speed maintenance travel, vehicle collision warning, lane departure warning of the vehicle, and the like.

[0170] Further, the microcomputer 12051 can perform cooperative control to realize automatic driving that is independent of the operation of the driver by controlling the driving force generation device, the steering mechanism, the braking device, and the like on the basis of information about the surroundings of the vehicle obtained by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040.

[0171] Further, the microcomputer 12051 can output a control command to the body system control unit 12020 on the basis of information outside the vehicle obtained by the outside information detection unit 12030. For example, the microcomputer 12051 controls a headlamp in accordance with the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, performs cooperative control to achieve, for example, prevention of glare such as switching a high beam to a low beam.

[0172] The sound image output unit 12052 transmits an output signal of at least one of a sound and an image to an output device capable of visually or aurally notifying a vehicle occupant or information outside the vehicle. In Figure 24 In an example, as the output device, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified. The display unit 12062 can include at least one of a vehicle-mounted display and a head-up display, for example.

[0173] Figure 25 is a diagram showing an example of a mounting position of the imaging unit 12031.

[0174] In Figure 25 , the vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as the imaging unit 12031.

[0175] For example, the imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front of the vehicle 12100, the side mirrors, the rear bumper, and the rear door, and the upper side of the windshield inside the vehicle, for example. The imaging unit 12101 provided at the front of the vehicle and the imaging unit 12105 provided at the upper side of the windshield inside the vehicle mainly obtain images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly obtain images of the side of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or the rear door mainly obtains images of the rear of the vehicle 12100. The front images obtained by the imaging units 12101 and 12105 are mainly used for detecting a preceding vehicle, a pedestrian, an obstacle, a traffic signal, a traffic sign, a lane, and the like.

[0176] Further, Figure 25Examples of imaging ranges of the imaging units 12101 to 12104 are shown. The imaging range 12111 represents an imaging range of the imaging unit 12101 provided on the vehicle front, the imaging ranges 12112 and 12113 respectively represent imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, and the imaging range 12114 represents an imaging range of the imaging unit 12104 provided on the rear bumper or the rear door. For example, by superimposing image data captured by the imaging units 12101 to 12104, a bird's-eye image of the vehicle 12100 viewed from above can be obtained.

[0177] At least one of the imaging units 12101 to 12104 can have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 can be a stereo camera including a plurality of imaging elements, or can be an imaging element having pixels for phase difference detection.

[0178] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can extract, by obtaining the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the temporal change in distance (relative speed with respect to the vehicle 12100), a three-dimensional object located on the travel route of the vehicle 12100, particularly, a three-dimensional object closest to the vehicle 12100, that is, a three-dimensional object traveling in substantially the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or more) as a preceding vehicle. Further, the microcomputer 12051 can set a distance between vehicles secured in advance in front of the preceding vehicle, and can perform automatic brake control (including follow-up travel stop control), automatic acceleration control (including follow-up travel start control), and the like. In this way, it is possible to perform coordinated control for realizing autonomous travel that does not depend on the operation of the driver, automatic driving, or the like.

[0179] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can classify three-dimensional object data on three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, and other three-dimensional objects such as utility poles, and extract them, so as to be used for automatic avoidance of obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that can be seen by the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 judges a collision risk indicating a degree of danger of collision with each obstacle, and when there is a possibility of collision with a collision risk exceeding a set value, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 or the display unit 12062 or performs forced deceleration or evasive steering by the drive system control unit 12010, thereby performing a driving assist for collision avoidance.

[0180] At least one of the imaging units 12101 to 12104 can be an infrared camera for detecting infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by judging whether a pedestrian is present in the imaging images of the imaging units 12101 to 12104. For example, the recognition of a pedestrian is performed by a process of extracting feature points in the imaging images of the imaging units 12101 to 12104 as infrared cameras and a process of performing pattern matching processing on a series of feature points indicating the outline of an object to judge whether the object is a pedestrian. When the microcomputer 12051 judges that a pedestrian is present in the imaging images of the imaging units 12101 to 12104 and recognizes the pedestrian, the sound image output unit 12052 controls the display unit 12062 so that the recognized pedestrian is covered with a rectangular outline for emphasis. In addition, the sound image output unit 12052 can cause the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0181] One example of a mobile body control system to which the technology according to the present disclosure is applicable has been described above. Specifically, the solid-state imaging device 1 according to any of the above-described embodiments and modifications thereof is applied to the imaging unit 12031. The application of the technology according to the present disclosure to the imaging unit 12031 makes it possible to obtain a captured image with high sensitivity, so that the captured image can be used for high-precision control in a mobile body control system.

[0182] [Application Example 2]

[0183] Figure 26 is a view showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (this technology) is applicable.

[0184] Figure 26 A state in which a surgeon (doctor) 11131 is performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000 is shown. As shown in the drawing, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical instruments 11110 such as a gas tube 11111 and an energy treatment instrument 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are installed.

[0185] The endoscope 11100 includes a lens barrel 11101 in which a region at a predetermined length from a distal end is inserted into a body cavity of the patient 11132 and a camera head 11102 connected to a proximal end of the lens barrel 11101. In the example shown, the endoscope 11100 configured as a so-called hard scope having a hard lens barrel 11101 is shown, but the endoscope 11100 can be configured as a so-called soft scope having a soft lens barrel.

[0186] An opening portion into which an objective lens is fitted is provided at a distal end of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and guides light generated by the light source device 11203 to the distal end of the lens barrel through a light guide extending into the inside of the lens barrel 11101, and emits the light toward an observation object in a body cavity of the patient 11132 via the objective lens. Note that the endoscope 11100 can be a direct vision scope, an oblique vision scope, or a side vision scope.

[0187] An optical system and an imaging element are provided inside the camera head 11102, and reflected light (observation light) from an observation object is converged on the imaging element by the optical system. The observation light is photoelectrically converted by the imaging element, and an electrical signal corresponding to the observation light, that is, an image signal corresponding to an observation image is generated. The image signal is transmitted to a camera control unit (CCU) 11201 as RAW data.

[0188] The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU), and the like, and comprehensively controls the operation of the endoscope 11100 and the display device 11202. Further, the CCU 11201 receives the image signal from the camera head 11102, and performs various types of image processing such as development processing (demosaicing processing) of the image signal to display an image based on the image signal.

[0189] The display device 11202 displays an image based on the image signal on which image processing has been performed by the CCU 11201 under the control of the CCU 11201.

[0190] The light source device 11203 includes a light source such as a light emitting diode (LED) and the like, for example, and supplies irradiation light for capturing an image of a surgical site or the like to the endoscope 11100.

[0191] The input device 11204 is an input interface for the endoscope surgery system 11000. The user can input various types of information and instructions to the endoscope surgery system 11000 via the input device 11204. For example, the user inputs an instruction for changing an imaging condition (a type of irradiation light, a magnification, a focal distance, or the like) of the endoscope 11100 or the like.

[0192] The treatment instrument control device 11205 controls the driving of the energy treatment instrument 11112 for cauterization and incision of tissue, sealing of blood vessels, and the like. The pneumoperitoneum device 11206 injects gas into the body cavity of the patient 11132 via the pneumoperitoneum tube 11111 to inflate the body cavity to secure the field of view of the endoscope 11100 and to secure the working space of the operator. The recorder 11207 is a device capable of recording various types of information related to surgery. The printer 11208 is a device capable of printing various types of information related to surgery in various forms such as text, images, or graphics.

[0193] Note that the light source device 11203 that supplies irradiation light when imaging the surgical site to the endoscope 11100 can include, for example, an LED, a laser light source, or a white light source including a combination thereof. In the case where the white light source includes a combination of RGB laser light sources, since the output intensity and output timing of various colors (various wavelengths) can be controlled with high precision, adjustment of the white balance of the captured image can be performed in the light source device 11203. Further, in this case, by emitting laser light from each of the RGB laser light sources onto the observation object in time division and controlling the driving of the imaging element of the camera head 11102 in synchronization with the emission timing, it is also possible to capture images corresponding to each of the RGBs in time division. According to this method, in the case where no color filter is provided in the imaging element, a color image can be obtained.

[0194] Further, the driving of the light source device 11203 can be controlled so that the intensity of the light to be output is changed every predetermined time. By controlling the driving of the imaging element of the camera head 11102 in synchronization with the timing of the change in light intensity to acquire images in time division and synthesize the images, a high dynamic range image without so-called occlusion shadows and overexposed highlights can be generated.

[0195] Further, the light source device 11203 can be configured to be able to supply light of a predetermined wavelength band corresponding to special light observation. In special light observation, for example, using the wavelength dependency of light absorption in body tissue, by emitting light having a narrow band domain compared to the irradiation light at the time of normal observation (i.e., white light), so-called narrow-band imaging that images predetermined tissue such as blood vessels of the mucosal surface layer with high contrast is performed. Alternatively, in special light observation, fluorescence observation that obtains an image by emitting excitation light to generate fluorescence can be performed. In fluorescence observation, for example, excitation light can be irradiated to body tissue to observe fluorescence from the body tissue (autofluorescence imaging), or a reagent such as indocyanine green (ICG) can be locally injected into the body tissue and excitation light corresponding to the fluorescence wavelength of the reagent can be emitted to obtain a fluorescence image. The light source device 11203 can be configured to be able to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0196] Figure 27 is a block diagram showing an example of a functional configuration of the camera head 11102 and the CCU 11201. Figure 26

[0197] The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are communicatively connected to each other through a transmission cable 11400.

[0198] The lens unit 11401 is an optical system provided at a connecting portion with the lens barrel 11101. An observation light received from the distal end of the lens barrel 11101 is guided to the camera head 11102 and is incident on the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

[0199] The imaging unit 11402 includes an imaging element. The number of imaging elements constituting the imaging unit 11402 can be one (so-called single board type) or a plurality (so-called multi board type). In a case where the imaging unit 11402 is configured in the multi board type, for example, image signals corresponding to RGB can be generated by the respective imaging elements, and a color image can be obtained by synthesizing the image signals. Alternatively, the imaging unit 11402 can include a pair of imaging elements for acquiring image signals for right and left eyes corresponding to three-dimensional (3D) display. By performing 3D display, the operator 11131 can more accurately grasp the depth of living tissues in a surgical site. Note that in a case where the imaging unit 11402 is configured in the multi board type, a plurality of lens units 11401 corresponding to the respective imaging elements can be provided.

[0200] Further, the imaging unit 11402 need not be provided in the camera head 11102. For example, the imaging unit 11402 can be provided just behind an objective lens inside the lens barrel 11101.

[0201] The driving unit 11403 includes an actuator and moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance under the control of the camera head control unit 11405 along an optical axis. As a result, the magnification and the focus of an image captured by the imaging unit 11402 can be appropriately adjusted.

[0202] ​The communication unit 11404 includes a communication device for transmitting / receiving various types of information to / from the CCU 11201. The communication unit 11404 transmits an image signal acquired from the imaging unit 11402 to the CCU 11201 as RAW data via the transmission cable 11400.

[0203] Further, the communication unit 11404 receives a control signal for controlling driving of the camera head 11102 from the CCU 11201, and supplies the control signal to the camera head control unit 11405. The control signal includes, for example, information on an imaging condition, such as information specifying a frame rate of an image to be captured, information specifying an exposure value at the time of imaging, and / or information specifying a magnification and a focus of an image to be captured, and the like.

[0204] Note that the imaging condition such as the frame rate, the exposure value, the magnification, and the focus can be appropriately specified by a user, or can be automatically set by the control unit 11413 of the CCU 11201 based on an acquired image signal. In the latter case, so-called auto exposure (AE) function, auto focus (AF) function, and auto white balance (AWB) function are provided in the endoscope 11100.

[0205] The camera head control unit 11405 controls driving of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.

[0206] The communication unit 11411 includes a communication device for transmitting / receiving various types of information to / from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0207] Further, the communication unit 11411 transmits a control signal for controlling driving of the camera head 11102 to the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0208] The image processing unit 11412 performs various types of image processing on an image signal that is RAW data transmitted from the camera head 11102.

[0209] The control unit 11413 performs various types of control related to imaging of a surgical site or the like by the endoscope 11100 and display of an image to be captured obtained by imaging of the surgical site or the like. For example, the control unit 11413 generates a control signal for controlling driving of the camera head 11102.

[0210] Further, the control unit 11413 causes the display apparatus 11202 to display a captured image of a surgical site or the like on the basis of an image signal that has been subjected to image processing by the image processing unit 11412. At this time, the control unit 11413 can recognize various objects within the captured image using various image recognition techniques. For example, the control unit 11413 can recognize a surgical instrument such as forceps, a specific living body site, bleeding, fog when the energy treatment instrument 11112 is used, or the like by detecting an edge shape, a color, or the like of an object included in the captured image. When causing the display apparatus 11202 to display the captured image, the control unit 11413 can superimpose various types of surgery support information on the image of the surgical site by using the recognition result. Since the surgery support information is superimposed and presented to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can reliably perform surgery.

[0211] The transmission cable 11400 that connects the camera head 11102 and the CCU 11201 together is an electrical signal cable compatible with communication of electrical signals, an optical fiber compatible with optical communication, or a composite cable thereof.

[0212] Here, in the example shown, wired communication is performed by using the transmission cable 11400, but wireless communication can be performed between the camera head 11102 and the CCU 11201.

[0213] One example of an endoscope surgery system to which the technology according to the present disclosure is applicable has been described above. The technology according to the present disclosure is applicable to the imaging unit 11402 provided in the camera head 11102 of the endoscope 11100 in the above-described configuration. Application of the technology according to the present disclosure to the imaging unit 11402 makes it possible to obtain a captured image with high sensitivity, thereby making it possible to provide the endoscope 11100 with high definition.

[0214] The present disclosure has been described above in connection with the embodiments and variations thereof, applicable examples, and application examples, but the present disclosure is not limited to the above-described embodiments and the like, and can be modified in various ways. It should be noted that the effects described here are merely illustrative. The effects of the present disclosure are not limited to the effects described here. The present disclosure can have effects other than those described here.

[0215] Further, the present disclosure can have the following configuration.

[0216] (1) A solid-state imaging device comprising:

[0217] a plurality of photoelectric conversion sections that are stacked on a semiconductor substrate and have wavelength selectivity that is different from each other; and

[0218] a wiring formed on the semiconductor substrate and electrically connected to the plurality of photoelectric conversion sections, wherein

[0219] each of the photoelectric conversion sections includes a photoelectric conversion film, and a first electrode and a second electrode disposed across the photoelectric conversion film, and

[0220] the wiring extends in a normal direction of the semiconductor substrate, and includes a vertical wiring formed in contact with the second electrode of each of the photoelectric conversion sections.

[0221] (2) The solid-state imaging device according to (1), wherein

[0222] the second electrodes of each of the photoelectric conversion sections are disposed to face each other in the normal direction of the semiconductor substrate, and

[0223] the vertical wiring is disposed at a position facing the second electrode in the normal direction of the semiconductor substrate.

[0224] (3) The solid-state imaging device according to (1) or (2), further comprising a pixel circuit formed on the semiconductor substrate and generating and outputting a pixel signal based on charges output from the plurality of photoelectric conversion sections, wherein

[0225] the vertical wiring is formed so as to extend to a layer in which the pixel circuit is formed.

[0226] (4) The solid-state imaging device according to any one of (1) to (3), wherein, among the plurality of photoelectric conversion sections, first and second photoelectric conversion sections adjacent to each other in the normal direction of the semiconductor substrate are disposed so that respective first electrodes of the first and second photoelectric conversion sections face each other.

[0227] (5) The solid-state imaging device according to (4), further comprising a first sealing film in contact with the first electrode of the first photoelectric conversion section, and a second sealing film in contact with the first electrode of the second photoelectric conversion section, wherein

[0228] the first and second sealing films have a bonding surface bonded to each other by a predetermined bonding process.

[0229] (6) The solid-state imaging device according to (5), wherein the vertical wiring is configured to include a columnar conductive member that penetrates a same surface as the bonding surface and is not subjected to the bonding process.

[0230] (7) The solid-state imaging device according to (5) or (6), wherein the solid-state imaging device further comprises a carbon film on the bonding surface that bonds the first and second sealing films together.

[0231] (8) The solid-state imaging device according to any one of (5) to (7), wherein each of the first sealing film and the second sealing film includes an inorganic oxide film, an inorganic nitride film, or an inorganic oxynitride film.

[0232] (9) The solid-state imaging device according to (4), wherein the first electrode of the first photoelectric conversion section and the first electrode of the second photoelectric conversion section have a bonding surface that is bonded to each other by a predetermined bonding process.

[0233] (10) The solid-state imaging device according to (9), wherein the vertical wiring is configured to include a columnar conductive member that penetrates through the same surface as the bonding surface and is not subjected to the bonding process.

[0234] (11) The solid-state imaging device according to (9) or (10), further comprising a carbon film on the bonding surface that bonds the first electrode of the first photoelectric conversion section and the first electrode of the second photoelectric conversion section together.

[0235] (12) The solid-state imaging device according to any one of (9) to (11), wherein the first electrode includes a transparent conductive film.

[0236] (13) The solid-state imaging device according to any one of (1) to (12), wherein the photoelectric conversion film includes an organic photoelectric conversion film or an inorganic photoelectric conversion film.

[0237] (14) The solid-state imaging device according to any one of (1) to (13), wherein

[0238] each of the photoelectric conversion sections includes

[0239] an oxide semiconductor layer that is in contact with the photoelectric conversion film and is configured to face the first electrode across the photoelectric conversion film, and

[0240] a cumulative electrode that is configured to face the oxide semiconductor layer across the insulating layer.

[0241] (15) A manufacturing method of a solid-state imaging device, comprising:

[0242] bonding, to each other, a second substrate that includes, in order from a second semiconductor substrate side, a second lower electrode, a second photoelectric conversion film, and a second upper electrode on the second semiconductor substrate, and a first substrate that includes, in order from a first semiconductor substrate side, a first photoelectric conversion film and a first upper electrode on the first semiconductor substrate, so that the first upper electrode and the second upper electrode face each other; and

[0243] After the first substrate is removed, an opposing electrode is formed opposite the first upper electrode across the first photoelectric conversion film, and a vertical wiring electrically connected to the second lower electrode and the opposing electrode is formed by forming a groove portion reaching the second lower electrode from the opposing electrode and filling the groove portion with a conductive material.

[0244] (16) The method of manufacturing a solid-state imaging device according to (15), wherein

[0245] The first substrate includes a first sealing film that seals the first upper electrode,

[0246] The second substrate includes a second sealing film that seals the second upper electrode,

[0247] The method of manufacturing a solid-state imaging device includes

[0248] A predetermined bonding process is performed on a surface of at least one of the first sealing film and the second sealing film, and thereafter the first sealing film and the second sealing film are attached to each other, thereby attaching the first substrate and the second substrate to each other.

[0249] (17) The method of manufacturing a solid-state imaging device according to (16), comprising:

[0250] As the predetermined bonding process, a process of forming a carbon film is performed on a surface of at least one of the first sealing film and the second sealing film, and thereafter the first sealing film and the second sealing film are attached to each other via the carbon film, thereby attaching the first substrate and the second substrate to each other.

[0251] (18) The method of manufacturing a solid-state imaging device according to (15), comprising:

[0252] A predetermined bonding process is performed on a surface of at least one of the first upper electrode and the second upper electrode, and thereafter the first upper electrode and the second upper electrode are attached to each other, thereby attaching the first substrate and the second substrate to each other.

[0253] (19) The method of manufacturing a solid-state imaging device according to (18), comprising:

[0254] As the predetermined bonding process, a process of forming a carbon film is performed on a surface of at least one of the first upper electrode and the second upper electrode, and thereafter the first upper electrode and the second upper electrode are attached to each other via the carbon film, thereby attaching the first substrate and the second substrate to each other.

[0255] (20) The method of manufacturing a solid-state imaging device according to any one of (15) to (19), wherein

[0256] The first photoelectric conversion portion including the opposing electrode, the first photoelectric conversion film, and the first upper electrode further includes

[0257] a first oxide semiconductor layer that is in contact with the first photoelectric conversion film and is configured to face the first upper electrode via the first photoelectric conversion film, and

[0258] a first accumulation electrode that is configured to face the first oxide semiconductor layer via the first insulating layer, and

[0259] the second photoelectric conversion section including a second lower electrode, a second photoelectric conversion film, and a second upper electrode further includes

[0260] a second oxide semiconductor layer that is in contact with the second photoelectric conversion film and is configured to face the second upper electrode via the second photoelectric conversion film, and

[0261] a second accumulation electrode that is configured to face the second oxide semiconductor layer via the second insulating layer.

[0262] The solid-state imaging device according to the embodiment of the present disclosure forms a vertical wiring in contact with each second electrode of a plurality of photoelectric conversion sections stacked on a semiconductor substrate, which makes it possible to efficiently output and transfer a pixel signal.

[0263] The manufacturing method of the solid-state imaging device according to the embodiment of the present disclosure joins a first substrate and a second substrate to each other to stack a first lower electrode and a counter electrode, and forms a vertical wiring in contact with the stacked first lower electrode and counter electrode, which makes it possible to efficiently output and transfer a pixel signal.

[0264] This application claims the benefit of Japanese Priority Patent Application No. JP 2019-209438, filed November 20, 2019, the entire contents of which are incorporated herein by reference.

[0265] It will be understood by those within the art that various modifications, combinations, sub-combinations, and alterations can occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.

Claims

1. A solid-state imaging device, comprising: Multiple photoelectric conversion units are stacked on a semiconductor substrate and have different wavelength selectivity; and Wiring, which is formed on the semiconductor substrate and electrically connected to the plurality of photoelectric conversion units, wherein Each of the aforementioned photoelectric conversion units includes a photoelectric conversion film and a first electrode and a second electrode disposed between the photoelectric conversion film and the second electrode. The wiring extends in the normal direction of the semiconductor substrate and includes vertical wiring formed in contact with the second electrode of each of the photoelectric conversion units. Among the plurality of photoelectric conversion units, the first photoelectric conversion unit and the second photoelectric conversion unit, which are adjacent to each other in the normal direction of the semiconductor substrate, are configured such that the first electrode of the first photoelectric conversion unit and the first electrode of the second photoelectric conversion unit are opposite to each other. The first electrode of the first photoelectric conversion unit and the first electrode of the second photoelectric conversion unit have a bonding surface that is bonded to each other by a predetermined bonding process; or, the first sealing film that contacts the first electrode of the first photoelectric conversion unit and the second sealing film that contacts the first electrode of the second photoelectric conversion unit have a bonding surface that is bonded to each other by a predetermined bonding process.

2. The solid-state imaging device according to claim 1, wherein... The second electrodes of each of the photoelectric conversion units are configured to face each other in the normal direction of the semiconductor substrate, and The vertical wiring is arranged in the normal direction of the semiconductor substrate at a position opposite to the second electrode.

3. The solid-state imaging apparatus according to claim 1 or 2 further includes a pixel circuit formed on the semiconductor substrate, said pixel circuit generating and outputting pixel signals based on charges output from the plurality of photoelectric conversion units, wherein... The vertical wiring is formed to extend into the layer that forms the pixel circuit.

4. The solid-state imaging apparatus according to claim 1 or 2, wherein the vertical wiring is configured to include a columnar conductive member that extends through the same surface as the bonding surface and is not subjected to the bonding process.

5. The solid-state imaging device according to claim 1 or 2, wherein the solid-state imaging device further comprises a carbon film located on the bonding surface, the carbon film bonding the first sealing film and the second sealing film together.

6. The solid-state imaging device according to claim 1 or 2, wherein both the first sealing film and the second sealing film comprise an inorganic oxide film, an inorganic nitride film, or an inorganic oxynitride film.

7. The solid-state imaging device according to claim 1 or 2, wherein the solid-state imaging device further comprises a carbon film located on the bonding surface, the carbon film bonding the first electrode of the first photoelectric conversion unit and the first electrode of the second photoelectric conversion unit together.

8. The solid-state imaging device according to claim 1 or 2, wherein the first electrode comprises a transparent conductive film.

9. The solid-state imaging device according to claim 1 or 2, wherein the photoelectric conversion film comprises an organic photoelectric conversion film or an inorganic photoelectric conversion film.

10. The solid-state imaging device according to claim 1 or 2, wherein Each of the aforementioned photoelectric conversion units includes An oxide semiconductor layer, wherein the oxide semiconductor layer is in contact with the photoelectric conversion film and is configured to face the first electrode across the photoelectric conversion film, and An accumulation electrode is configured to face the oxide semiconductor layer through an insulating layer.

11. A method for manufacturing a solid-state imaging device, comprising: A second substrate, which includes a second lower electrode, a second photoelectric conversion film, and a second upper electrode sequentially from the second semiconductor substrate side on a second semiconductor substrate, is bonded to a first substrate, which includes a first photoelectric conversion film and a first upper electrode sequentially from the first semiconductor substrate side on a first semiconductor substrate, such that the first upper electrode and the second upper electrode are opposite to each other. and After removing the first substrate, a counter electrode is formed, which is opposite to the first upper electrode and separated by the first photoelectric conversion film. A vertical wiring electrically connected to the second lower electrode is formed by forming a groove from the counter electrode to the second lower electrode and filling the groove with a conductive material. A predetermined bonding process is performed on the surface of at least one of the first upper electrode and the second upper electrode, and then the first upper electrode and the second upper electrode are bonded together, thereby bonding the first substrate and the second substrate together; or, a predetermined bonding process is performed on the surface of at least one of the first sealing film in the first substrate sealing the first upper electrode and the second sealing film in the second substrate sealing the second upper electrode, and then the first sealing film and the second sealing film are bonded together, thereby bonding the first substrate and the second substrate together.

12. A method for manufacturing a solid-state imaging device according to claim 11, comprising: As part of the predetermined bonding process, a carbon film formation process is performed on the surface of at least one of the first sealing film and the second sealing film, and then the first sealing film and the second sealing film are bonded together via the carbon film, thereby bonding the first substrate and the second substrate together.

13. A method for manufacturing a solid-state imaging device according to claim 11, comprising: As part of the predetermined bonding process, a carbon film is formed on the surface of at least one of the first upper electrode and the second upper electrode, and then the first upper electrode and the second upper electrode are bonded together via the carbon film, thereby bonding the first substrate and the second substrate together.

14. A method for manufacturing a solid-state imaging device according to any one of claims 11 to 13, wherein The first photoelectric conversion unit, including the opposing electrode, the first photoelectric conversion film, and the first upper electrode, further includes... A first oxide semiconductor layer, which is in contact with a first photoelectric conversion film and configured to face a first upper electrode across the first photoelectric conversion film, and The first accumulation electrode is configured to face the first oxide semiconductor layer across a first insulating layer, and The second photoelectric conversion unit, including the second lower electrode, the second photoelectric conversion film, and the second upper electrode, also includes... The second oxide semiconductor layer is in contact with the second photoelectric conversion film and is configured to face the second upper electrode across the second photoelectric conversion film. The second accumulation electrode is configured to be opposite the second oxide semiconductor layer through a second insulating layer.

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